System and method for setting write speed based on temperature of storage device

Abstract

The invention discloses a system and a method for setting write speed based on temperature of a storage device. The system comprises a temperature control circuit and a write speed control circuit. The temperature control circuit senses the temperature of the storage device in real time. The write-in speed control circuit executes a proportional-integral-differential algorithm to determine a specified write-in speed modulation proportion in real time according to the change of the temperature of the storage device along with time so as to send a write-in speed modulation instruction to be transmitted to the storage device through the temperature controller. The write-in speed of the storage device is modulated in real time based on a specified write-in speed modulation ratio specified by a write-in speed modulation instruction.

Description

Technical Field

[0001] The present invention relates to a storage device, and particularly to a system and method for setting a write speed based on the temperature of the storage device. Background Art

[0002] There is no perfect product in the world, and the same is true for storage devices such as solid state drives (SSDs). In particular, after continuous long-term use, the speed may drop or become stuck. Users who have used storage devices for a long time may have encountered similar problems. For players who attach importance to game time, improving the performance of startup, loading, and smooth gaming is an essential factor when playing online games for a long time. The speed drop of the storage device often occurs during the process of writing data. One of the main reasons for the sudden speed drop is that the temperature of the storage device rises too fast, resulting in a sudden drop in the working frequency, which makes players feel stuck during use and directly affects the evaluation of the quality of the storage device. Summary of the Invention

[0003] In view of the deficiencies of the prior art, the present invention provides a system and method for setting a write speed based on the temperature of the storage device.

[0004] The system for setting a write speed based on the temperature of the storage device according to the present invention includes a temperature control circuit and a write speed control circuit. The temperature control circuit includes a temperature sensor and a temperature controller. The temperature sensor is connected to the temperature controller. The temperature sensor is configured to sense the temperature of the storage device in real time. The write speed control circuit is connected to the temperature controller. The write speed control circuit is configured to execute a proportional-integral-derivative (PID) algorithm to determine a specified write speed modulation ratio in real time according to the change of the temperature of the storage device sensed by the temperature sensor over time, and to send a write speed modulation instruction to the storage device through the temperature controller for indicating that the write speed of the storage device is modulated in real time based on the specified write speed modulation ratio specified by the received write speed modulation instruction.

[0005] The method for setting a write speed based on the temperature of the storage device according to the present invention includes the following steps: sensing the temperature of the storage device in real time; determining a specified write speed modulation ratio in real time according to the change of the sensed temperature of the storage device over time; sending a write speed modulation instruction to the storage device through the temperature controller in real time according to the specified write speed modulation ratio; and modulating the write speed of the storage device itself in real time by the storage device based on the received specified write speed modulation ratio.

[0006] As described above, the present invention provides a system and method for setting a write speed based on the temperature of a storage device. The system and method for setting a write speed based on the temperature of a storage device according to the present invention can detect in real time the change of the temperature of the storage device over time, and modulate the write speed of the storage device in real time over time according to the detected temperature change of the storage device, so as to avoid damage to the storage device due to overheating, and can avoid the problem of sudden drop in the write speed of the storage device during the modulation process.

[0007] To enable a further understanding of the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided drawings are only for reference and illustration, and are not used to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a block diagram of a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0009] Figure 2 It is a schematic diagram of the temperature critical value of a storage device controlled by a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention and its corresponding write speed reference value.

[0010] Figure 3 It is a schematic diagram of the temperature critical value, sensed temperature value and specified write speed modulation ratio of a storage device controlled by a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0011] Figure 4 It is a curve graph of a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0012] Figure 5 It is a flowchart of steps for determining a modulation ratio of a write speed according to a change of the temperature of a storage device over time included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0013] Figure 6 It is a flowchart of steps for determining a write speed modulation ratio according to a comparison between the temperature of a storage device and a temperature critical value included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0014] Figure 7 It is a flowchart of steps for establishing a write speed temperature control operation equation in a test mode included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0015] Figure 8Flowchart of the step of calculating the write speed modulation ratio of a storage device using a write speed temperature control operation equation in an actual usage mode, which is included in the method for setting a write speed based on the temperature of the storage device according to an embodiment of the present invention. Detailed implementation manners

[0016] The following are specific embodiments to illustrate the implementation manners of the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments. Various details in this specification can also be modified and varied based on different viewpoints and applications without departing from the concept of the present invention. Additionally, the drawings of the present invention are only simple schematic illustrations and are not drawn according to actual sizes, which is stated in advance. The following implementation manners will further detail the related technical content of the present invention, but the disclosed content is not used to limit the protection scope of the present invention. In addition, the term "or" used herein should, depending on the actual situation, possibly include any one or a combination of multiple related listed items.

[0017] Please refer to Figure 1 and Figure 5 , where Figure 1 is a block diagram of the system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, Figure 5 is a flowchart of the step of determining the modulation ratio of the write speed according to the change of the temperature of the storage device over time, which is included in the method for setting a write speed based on the temperature of the storage device according to an embodiment of the present invention.

[0018] The method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention can be executed, for example but not limited to, by the system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention to control the modulation of the write speed of one or more storage devices (such as but not limited to Figure 1 the storage device SG shown). Each storage device at least includes a storage component and a control component, where the control component is connected to the storage component to control the storage component to perform data writing, erasing and other processing operations.

[0019] As Figure 1 shown, the system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention at least includes a temperature controller circuit TMR and a write speed control circuit WCR. The temperature controller circuit TMR includes a temperature sensor SR and a temperature control circuit CT.

[0020] For example, the write speed control circuit WCR described herein may be a Proportional-Integral-Derivative (PID) controller for executing a Proportional-Integral-Derivative (PID) algorithm. The storage device SG to be controlled may be a Solid State Drive (SSD). This is only an example for illustration purposes, and the present invention is not limited thereto. In practice, it may also be replaced with other controllers having the same function.

[0021] The temperature control circuit CT is connected to the temperature sensor SR, the write speed control circuit WCR, and the control component of the storage device SG. The temperature sensor SR is disposed adjacent to the storage device SG.

[0022] The method for setting the write speed based on the temperature of the storage device according to the embodiment of the present invention includes steps S101 to S104 as Figure 5 shown, to modulate the write speed of the storage device SG according to the temperature change of the storage device SG, which is described in detail as follows.

[0023] In step S101, the temperature sensor SR of the temperature control circuit CT senses the temperature of the storage device SG in real time.

[0024] In step S102, the write speed control circuit WCR executes a Proportional-Integral-Derivative (PID) algorithm to determine the modulation ratio of the write speed of the storage device SG over time in real time according to the change of the temperature of the storage device SG sensed by the temperature sensor SR of the temperature control circuit CT over time, as a specified write speed modulation ratio.

[0025] In step S103, the write speed control circuit WCR sends a write speed modulation instruction according to the above-specified write speed modulation ratio, and transmits it to the control component of the storage device SG through the temperature control circuit CT.

[0026] In step S104, the control component of the storage device SG modulates the write speed of the storage component of the storage device SG according to a write speed modulation instruction received from the write speed control circuit WCR.

[0027] Please refer to Figure 1 、 Figure 2 and Figure 6 , where Figure 1 is a block diagram of the system for setting the write speed based on the temperature of the storage device according to the embodiment of the present invention, Figure 2 is a schematic diagram of the temperature threshold value of the storage device controlled by the system for setting the write speed based on the temperature of the storage device according to the embodiment of the present invention and its corresponding write speed reference value, Figure 6It is a flowchart of the step of determining the write speed modulation ratio based on the comparison between the temperature of the storage device and the temperature threshold value included in the method of setting the write speed based on the temperature of the storage device according to an embodiment of the present invention.

[0028] The system for setting the write speed based on the temperature of the storage device according to an embodiment of the present invention is as Figure 1 shown. In addition to including a temperature controller circuit TMR and a write speed control circuit WCR, it may further include a comparison circuit TER for executing the method of setting the write speed based on the temperature of the storage device according to an embodiment of the present invention. The comparison circuit CMP is connected to the temperature control circuit CT of the temperature controller circuit TMR and the write speed control circuit WCR.

[0029] The method of setting the write speed based on the temperature of the storage device according to an embodiment of the present invention may further include steps S201 to S203 as Figure 6 shown to determine the modulation ratio of the write speed of the storage device SG according to the comparison result between the temperature of the storage device SG and a temperature threshold value SP, which is described in detail as follows.

[0030] In step S201, the comparison circuit CMP receives a temperature threshold value SP of the storage device SG through the temperature control circuit CT of the temperature controller circuit TMR. The temperature threshold value SP described herein is equal to or slightly lower than the maximum temperature value that the storage device SG can withstand, such as but not limited to Figure 2 shown as 70 °C). The temperature threshold value SP may be preset by the manufacturer's electronic device and stored in the storage component or control component of the storage device SG.

[0031] It should be understood that when the method and system for setting the write speed based on the temperature of the storage device according to an embodiment of the present invention are applied to different storage devices, the obtained or set temperature threshold value is different, depending on the temperature resistance of each storage device.

[0032] In step S202, the comparison circuit CMP compares the temperature of the storage device SG sensed by the temperature sensor SR as in step S101 above with a temperature threshold value SP to output a comparison signal. Alternatively, the comparison circuit CMP may further calculate a temperature difference between the temperature of the storage device SG sensed by the temperature sensor SR and the temperature threshold value SP to output a comparison signal.

[0033] In step S203, the write speed control circuit WCR determines a specified write speed modulation ratio WR(t)%, that is, the modulation ratio of the write speed of the storage device SG, based on a comparison signal received from the comparison circuit CMP.

[0034] After performing step S203, the above steps S103 and S104 are executed, so that the temperature control circuit CT of the temperature control circuit CT instructed by the write speed control circuit WCR controls the control component of the storage device SG to modulate the write speed of the storage device SG in real time based on a write speed modulation ratio specified by a write speed modulation instruction.

[0035] When the temperature of the storage device SG reaches a temperature critical value SP, such as Figure 2 as shown, 70 degrees, the appropriate write speed of the storage device SG is defined as a write speed reference value.

[0036] When it is sensed that the temperature of the storage device SG is about to reach a temperature critical value SP, such as 70 °C, the write speed of the storage device SG gradually starts to decrease over time in advance, so that the write speed of the storage device SG is maintained at no more than a write speed reference value, and the problem of sudden drop in the write speed of the storage device can be avoided during the modulation process.

[0037] Please refer to Figure 1 and Figure 7 where Figure 1 is a block diagram of a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, Figure 7 is a flowchart of steps for establishing a write speed temperature control operation equation in a test mode included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0038] The method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention may further include steps S301 to S308 as shown in Figure 7 to establish a write speed temperature control operation equation in a test mode, which is described in detail as follows.

[0039] After performing step S101 to sense the temperature of the storage device SG by the temperature sensor SR of the temperature control circuit CT in a test mode, steps S301 to S303 are executed, and the execution order is not limited by Figure 8 as shown.

[0040] In step S301, the comparison circuit CMP obtains the temperature of the storage device SG sensed by the temperature sensor SR of the temperature control circuit CT at a certain time point (t = s) in a test mode, expressed as T(t) = T(s), where s represents a certain time point, which is a sampling time point in a test mode.

[0041] In step S302, the comparison circuit CMP obtains, in a test mode, the temperature of the storage device SG sensed by the temperature sensor SR of the temperature control circuit CT at the previous time point (t = s - 1) of a certain time point (t = s), denoted as T(t) = T(s - 1). The previous time point (t = s - 1) is the previous sampling time point of a certain time point (t = s), for example but not limited to, a time point 1 second before a certain time point (t = s).

[0042] In step S303, the comparison circuit CMP obtains, in a test mode, the temperature of the storage device SG sensed by the temperature sensor SR of the temperature control circuit CT at the even previous time point (t = s - 2) of a certain time point (t = s), denoted as T(t) = T(s - 2). The even previous time point (t = s - 1) of a certain time point (t = s) is the even previous sampling time point of a certain time point (t = s), for example but not limited to, a time point 2 seconds before a certain time point (t = s).

[0043] After performing steps S201 to S203 to determine a specified write speed modulation ratio WR(t)% of the storage device SG at a certain time point (t = s) by the write speed control circuit WCR, steps S304 to S308 are executed accordingly.

[0044] In step S304, the write speed control circuit WCR obtains, in a test mode, a specified write speed modulation ratio of the storage device SG sensed at a certain time point (t = s) determined by performing steps S201 to S203, denoted as WR(t)% = WR(s)%.

[0045] In step S305, the write speed control circuit WCR obtains, in a test mode, a specified write speed modulation ratio of the storage device SG sensed at the previous time point (t = s - 1) determined by performing steps S201 to S203, denoted as WR(t)% = WR(s - 1)%.

[0046] In step S306, the write speed control circuit WCR, in a test mode, substitutes the temperature of the storage device SG sensed at a certain time point (denoted as T(t)=T(s)) obtained in steps S301 to S304, the temperature of the storage device SG sensed at the previous time point (denoted as T(t)=T(s - 1)), the temperature of the storage device SG sensed at the time point even before that (denoted as T(t)=T(s - 2)), a specified write speed modulation ratio of the storage device SG sensed at a certain time point (denoted as WR(t)%=WR(s)%), and a specified write speed modulation ratio of the storage device SG sensed at the previous time point (denoted as WR(t)%=WR(s - 1)%) into the following write speed operation equation to calculate a plurality of set parameters Kp, Ki, Kd in step S307:

[0047] WR(t)=WR(t - 1)-{Kp×[(T(t)-T(t - 1)]+Ki×[T(t)-SP]+Kd×

[0048] [T(t)-2T(t - 1)+T(t - 2)]};

[0049] Wherein, WR(t) represents a specified write speed modulation ratio determined for the storage device SG at a certain time point, WR(t - 1) represents a specified write speed modulation ratio determined for the storage device SG at the previous time point, T(t) represents the temperature of the storage device SG sensed by the temperature sensor SR at a certain time point, T(t - 1) represents the temperature of the storage device SG sensed by the temperature sensor SR at the previous time point, T(t - 2) represents the temperature of the storage device SG sensed at the time point even before that, SP represents a temperature threshold value, and Kp, Ki, Kd are a plurality of set parameters.

[0050] For ease of explanation, as described above, data of the storage device SG is sampled in a test mode, but in practice, data of other storage devices can also be sampled and substituted into a write speed operation equation to calculate a plurality of set parameters Kp, Ki, Kd.

[0051] In step S308, the write speed control circuit WCR, in a test mode, only substitutes the known plurality of set parameters Kp, Ki, Kd into the above write speed operation equation to form / establish a write speed temperature control operation equation.

[0052] Please refer to Figure 1 and Figure 8 where Figure 1 is a block diagram of the system for setting the write speed based on the temperature of the storage device according to an embodiment of the present invention, Figure 8The flowchart of the step of calculating the write speed modulation ratio of the storage device using the write speed temperature control operation equation in the actual usage mode, which is included in the method for setting the write speed based on the temperature of the storage device according to the embodiments of the present invention.

[0053] The method for setting the write speed based on the temperature of the storage device according to the embodiments of the present invention may further include steps S401 to S408 as Figure 7 shown, to calculate a specified write speed modulation ratio WR(t)% during the actual use of the storage device SG (or other storage devices with the same or similar characteristics) using the established write speed temperature control operation equation in an actual usage mode, which is described in detail as follows.

[0054] In step S401, the write speed control circuit WCR obtains an established write speed temperature control operation equation in an actual usage mode.

[0055] In step S402, the temperature sensor SR of the temperature controller circuit TMR senses the temperature of the storage device SG at a current time point (t = s + n) in an actual usage mode, denoted as T(t) = T(s + n). The current time point (t = s + n) described herein is a sensing time point of the temperature of the storage device SG in an actual usage mode, which is a time point after a time length of n seconds from the sampling time point (t = s) in the above test mode.

[0056] In step S403, the temperature sensor SR of the temperature controller circuit TMR senses the temperature of the storage device SG at the previous time point (t = s - 1, for example, 1 second before time s + n) of the current time point (t = s + n) in an actual usage mode, denoted as T(t) = T(s + n - 1).

[0057] In step S404, the write speed control circuit WCR obtains a specified write speed modulation ratio of the storage device SG sensed at the previous time point (t = s + n - 1) determined by performing steps S201 to S203 in an actual usage mode, denoted as WR(t)% = WR(s + n - 1)%.

[0058] In step S405, the temperature sensor SR of the temperature controller circuit TMR senses the temperature of the storage device SG at the time point two before the current time point (t = s + n) (t = s - 2, for example, 2 seconds before time s + n) in an actual usage mode, denoted as T(t) = T(s + n - 2).

[0059] In step S406, the write speed control circuit WCR, in an actual usage mode, substitutes the temperature of the storage device SG sensed at a current time point obtained in the above steps S402 to S405 (denoted as T(t)=T(s + n)), the temperature of the storage device SG sensed at a previous time point of the current time point (denoted as T(t)=T(s + n - 1)), a specified write speed modulation ratio of the storage device SG sensed at the previous time point (denoted as WR(t)% = WR(s + n - 1)%), and the temperature at an even more previous time point (denoted as T(t)=T(s + n - 2)) into a write speed temperature control operation equation established in the above step S308, to calculate, in step S407, a specified write speed modulation ratio WR(s + n)% of the storage device sensed at a current time point.

[0060] In step S408, the write speed control circuit WCR, in an actual usage mode, multiplies a specified write speed modulation ratio WR(s + n)% of the storage device SG sensed at a current time point by a write speed reference value of the storage device SG to calculate a specified write speed. Then, the write speed control circuit WCR sends a write speed modulation command based on this specified write speed.

[0061] Finally, in an actual usage mode, the control component of the storage device SG modulates the write speed of writing data into the storage component of the storage device SG to be equal to a specified write speed indicated by this write speed modulation command according to a write speed modulation command received from the write speed control circuit WCR. It should be understood that the method for setting the write speed based on the temperature of the storage device in the embodiments of the present invention can be repeatedly executed to gradually modulate the write speed of the storage device SG in real time and dynamically multiple times with different changes in the temperature of the storage device SG.

[0062] Please refer to Figure 1 、 Figure 3 and Figure 4 where Figure 1 is a block diagram of a system for setting the write speed based on the temperature of the storage device in an embodiment of the present invention, Figure 3 is a schematic diagram of the temperature critical value, sensed temperature value, and specified write speed modulation ratio of the storage device controlled by the system for setting the write speed based on the temperature of the storage device in an embodiment of the present invention, Figure 4 is a curve graph of the system for setting the write speed based on the temperature of the storage device in an embodiment of the present invention.

[0063] The write speed control circuit WCR can, according to multiple temperatures of the storage device SG (and other storage devices) sensed by the temperature sensor SR at multiple time points, such as Figure 3 the temperatures T(t), T(t - 1), T(t - 2) shown, asFigure 4 As shown, a temperature change curve CUTM is established in a graph.

[0064] As Figure 4 shown, the vertical axis on one side of the graph lists multiple reference temperature values, and the horizontal axis on one side of the graph, such as the left side, lists multiple times. The write speed control circuit WCR can set multiple write speed reference modulation ratios corresponding to the multiple reference temperature values respectively, and list the multiple write speed reference modulation ratios on the vertical axis on the other side of the graph, such as the right side.

[0065] The write speed control circuit WCR can, according to a temperature threshold value SP of the storage device SG (and other storage devices), such as Figure 3 shown as 70 °C, establish a temperature threshold value straight line CUSP in a graph as Figure 4 shown.

[0066] The write speed control circuit WCR can, according to the change of a specified write speed modulation ratio WR(t)% with temperature of the storage device SG (and other storage devices) as Figure 3 shown, establish a specified write speed ratio curve CUWR in a graph as Figure 4 shown.

[0067] In summary, the present invention provides a system for setting the write speed based on the temperature of a storage device. The system and method for setting the write speed based on the temperature of a storage device according to the present invention can detect the change of the temperature of the storage device over time in real time, modulate the write speed of the storage device in real time over time according to the detected temperature change of the storage device, so as to avoid damage to the storage device due to overheating, and can avoid the problem of sudden drop in the write speed of the storage device during the modulation process.

[0068] The content disclosed above is only the preferred feasible embodiment of the present invention, and does not limit the claims of the present invention. Therefore, all equivalent technical changes made by using the content of the specification and drawings of the present invention are included in the claims of the present invention.

Claims

1. A system for setting a write speed based on the temperature of a storage device, characterized in that, The system for setting the writing speed based on the temperature of the storage device includes: A temperature control circuit, including a temperature sensor and a temperature controller, the temperature sensor is connected to the temperature controller, and the temperature sensor is configured to sense the temperature of a storage device in real time; and A writing speed control circuit, connected to the temperature controller, configured to execute a proportional-integral-derivative algorithm to determine a specified writing speed modulation ratio in real time according to the change of the temperature of the storage device sensed by the temperature sensor over time, and to send a writing speed modulation instruction to the storage device through the temperature controller, for instructing the writing speed of the storage device to be modulated in real time based on the specified writing speed modulation ratio specified by the received writing speed modulation instruction.

2. The system for setting a write speed based on the temperature of a storage device according to claim 1, wherein The system for setting the writing speed based on the temperature of the storage device further includes: A comparison circuit, connected to the temperature controller, configured to compare the temperature of the storage device sensed by the temperature sensor in real time with a temperature threshold value to output a comparison signal.

3. The system for setting a write speed based on the temperature of a storage device according to claim 2, wherein The comparison circuit calculates a temperature difference between the temperature of the storage device sensed by the temperature sensor in real time and the temperature threshold value to output the comparison signal.

4. The system for setting a write speed based on the temperature of a storage device according to claim 3, wherein The writing speed control circuit is connected to the comparison circuit, and the writing speed control circuit determines the specified writing speed modulation ratio according to the comparison signal to output the writing speed modulation instruction.

5. The system for setting a write speed based on the temperature of a storage device according to claim 1, wherein The writing speed control circuit establishes a temperature change curve in a graph according to multiple temperature values of the storage device sensed by the temperature sensor at multiple time points. The vertical axis on one side of the graph lists multiple reference temperature values, and the horizontal axis on one side of the graph lists multiple times.

6. The system for setting a write speed based on the temperature of a storage device according to claim 5, wherein, The writing speed control circuit establishes a temperature threshold value line in the graph according to a temperature threshold value of the storage device.

7. The system for setting a write speed based on the temperature of a storage device according to claim 6, wherein The writing speed control circuit sets multiple writing speed reference modulation ratios corresponding to the multiple reference temperature values respectively, lists the multiple writing speed reference modulation ratios on the vertical axis on the other side of the graph, and establishes a specified writing speed ratio curve in the graph according to the change of the specified writing speed modulation ratio with the change of the temperature of the storage device.

8. The system for setting a write speed based on the temperature of a storage device according to claim 1, wherein The writing speed control circuit substitutes the temperatures of the storage device sensed by the temperature sensor at a certain time point, the previous time point, and the time point before that into a writing speed operation equation, and substitutes the specified writing speed modulation ratios set for the storage device at a certain time point and the previous time point into the writing speed operation equation to calculate multiple set parameters; Where the writing speed operation equation is: WR(t) = WR(t - 1) - {Kp × [(T(t) - T(t - 1)] + Ki × [T(t) - SP] + Kd × [T(t) - 2T(t - 1) + T(t - 2)]}; Wherein, WR(t) represents a specified write speed modulation ratio set for the storage device at a certain time point, WR(t - 1) represents the specified write speed modulation ratio set for the storage device at the previous time point, T(t) represents the temperature of the storage device sensed by the temperature sensor at a certain time point, T(t - 1) represents the temperature of the storage device sensed by the temperature sensor at the previous time point, T(t - 2) represents the temperature of the storage device sensed at the time point even before that, SP represents a temperature threshold value, and Kp, Ki, and Kd are the multiple set parameters.

9. The system for setting a write speed based on the temperature of a storage device according to claim 8, wherein, The write speed control circuit substitutes the calculated multiple set parameters into the write speed operation equation to form a write speed temperature control operation equation, and substitutes the temperature of the storage device sensed by the temperature sensor at any time point into the write speed temperature control operation equation to calculate the specified write speed modulation ratio of the storage device at this time point.

10. The system for setting a write speed based on the temperature of a storage device according to claim 9, wherein The storage device multiplies the specified write speed modulation ratio by a write speed reference value of the storage device to calculate a specified write speed of the storage device.

11. A method for setting a write speed based on the temperature of a storage device, characterized in that, The method for setting the write speed based on the temperature of the storage device includes the following steps: Sense the temperature of a storage device in real time; Determine a specified write speed modulation ratio in real time according to the change of the sensed temperature of the storage device over time; Send a write speed modulation instruction to the storage device in real time according to the specified write speed modulation ratio; And Based on the received specified write speed modulation ratio, the storage device modulates the write speed of itself in real time.

12. The method for setting a write speed based on the temperature of a storage device according to claim 11, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: Compare the temperature of the storage device sensed in real time with a temperature threshold value to output a comparison signal.

13. The method for setting a write speed based on the temperature of a storage device according to claim 12, wherein The method for setting the write speed based on the temperature of the storage device further includes the following steps: Calculate a temperature difference between the temperature of the storage device sensed in real time and the temperature threshold value to output the comparison signal.

14. The method for setting a write speed based on the temperature of a storage device according to claim 13, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: According to the comparison signal, determine the specified write speed modulation ratio of a write speed reference value corresponding to the temperature threshold value to output the write speed modulation instruction; And Based on the specified write speed modulation ratio, modulate the current write speed of the storage device.

15. The method for setting a write speed based on the temperature of a storage device according to claim 11, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: In establishing a curve graph, list multiple reference temperature values on the vertical axis on one side of the curve graph, and list multiple times on the horizontal axis on one side of the curve graph; And According to the multiple temperature values of the storage device sensed at multiple time points, establish a temperature change curve in the curve graph.

16. The method for setting a write speed based on the temperature of a storage device according to claim 15, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: Based on a temperature threshold value of the storage device, a temperature threshold value line is established in the curve graph.

17. The method for setting a write speed based on the temperature of a storage device according to claim 16, wherein, The method for setting a write speed based on the temperature of a storage device further includes the following steps: Set a plurality of write speed reference modulation ratios corresponding to the plurality of reference temperature values respectively; List the plurality of write speed reference modulation ratios on the vertical axis on the other side of the curve graph; And Based on the change of the specified write speed modulation ratio with the change of the temperature of the storage device, a specified write speed ratio curve is established in the curve graph.

18. The method for setting a write speed based on the temperature of a storage device according to claim 11, wherein The method for setting a write speed based on the temperature of a storage device further includes the following steps: Establish a write speed operation equation: WR(t) = WR(t - 1) - {Kp × [(T(t) - T(t - 1)] + Ki × [T(t) - SP] + Kd × [T(t) - 2T(t - 1) + T(t - 2)]}; Wherein, WR(t) represents the specified write speed modulation ratio set for the storage device at a certain time point, WR(t - 1) represents the specified write speed modulation ratio set for the storage device at the previous time point, T(t) represents the temperature of the storage device sensed at a certain time point, T(t - 1) represents the temperature of the storage device sensed at the previous time point, T(t - 2) represents the temperature of the storage device sensed at the time point even before the previous one, SP represents a temperature threshold value, and Kp, Ki, and Kd are a plurality of set parameters; Substitute the temperatures of the storage device sensed at a certain time point, the previous time point, and the time point even before the previous one into the write speed operation equation; and Substitute the specified write speed modulation ratios set for the storage device at a certain time point and the previous time point respectively into the write speed operation equation to calculate the plurality of set parameters.

19. The method for setting a write speed based on the temperature of a storage device according to claim 18, wherein, The method for setting a write speed based on the temperature of a storage device further includes the following steps: Substitute the calculated plurality of set parameters into the write speed operation equation to form a write speed temperature control operation equation; And Substitute the temperature of the storage device sensed at any time point into the write speed temperature control operation equation to calculate the specified write speed modulation ratio of the storage device at this time point.

20. The method for setting a writing speed based on the temperature of a storage device according to claim 19, wherein, The method for setting a write speed based on the temperature of a storage device further includes the following steps: Multiply the specified write speed modulation ratio by a write speed reference value of the storage device to calculate a specified write speed of the storage device.

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