Plasma activation process cavity for high-vacuum wafer bonding
By optimizing the structure and electrode assembly configuration of the plasma activation process cavity, the limitations of the plasma activation process cavity in terms of uniformity and activation efficiency are solved, and a more efficient wafer bonding effect is achieved.
Patent Information
- Application Number
- CN202510438906.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-09
- Publication Date
- 2025-07-04
AI Technical Summary
The existing plasma activation process chambers have limitations in terms of uniformity and activation efficiency. Especially when facing complex structures and large-sized wafers, it is difficult to ensure the uniformity and activation efficiency of plasma distribution, which affects the surface quality and bonding quality of the wafer.
A plasma activation process chamber for high vacuum wafer bonding is designed. By setting up multiple air inlets and air extraction ports, dispersing plates, annular air inlet chambers, and air extraction barrels, combined with the flexible configuration of electrode components and power sources, the plasma gas flow field is optimized and plasma uniformity and activation efficiency are improved.
The uniformity and activation efficiency of plasma on the wafer surface are improved, thereby improving the surface quality and bonding quality of the wafer and enhancing the flexibility of the process.
Smart Images
Figure CN120261249A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of high-vacuum wafer bonding, and specifically provides a plasma activation process chamber for high-vacuum wafer bonding. Background Technique
[0002] Wafer bonding technology refers to the process of tightly bonding two polished homogeneous or heterogeneous wafers through chemical and physical actions. After the wafers are bonded, the atoms at the interface react under the action of external forces to form covalent bonds and integrate into one body, and the bonding interface reaches a specific bonding strength.
[0003] Plasma activation is an extremely important step in wafer bonding pretreatment, which is used to improve the physical and chemical properties of the wafer surface. It activates the wafer surface by using plasma, making the wafer easier to bond with other wafers. Among them, the plasma activation process chamber is the main carrier structure for plasma activation.
[0004] Existing plasma activation process chambers still have certain limitations in terms of uniformity, activation efficiency, and process flexibility. Especially when facing wafers with complex structures and large sizes, it is difficult to ensure the uniformity of plasma distribution and activation efficiency, which affects the surface quality of the wafers and further affects the bonding quality of the wafers. Summary of the Invention
[0005] In order to solve the problem that the existing plasma activation process chamber still has certain limitations in terms of uniformity and activation efficiency, the present invention provides a new plasma activation process chamber for high-vacuum wafer bonding.
[0006] The present invention is implemented by adopting the following technical solutions: A plasma activation process chamber for high-vacuum wafer bonding, comprising a square chamber shell and an electrode assembly. The square chamber shell is formed by hermetically welding a top plate, a bottom plate, a front side plate, a rear side plate, a left side plate and a right side plate. An upper air inlet is provided on the top plate of the square chamber shell. Two dispersion plates are fixedly arranged in the square chamber shell at positions below the upper air inlet, and the two dispersion plates are distributed up and down with a spacing therebetween. A plurality of upper air holes are distributed on both of the two dispersion plates, and the upper air holes on the two dispersion plates are arranged staggeredly. A wafer transport port is provided at the center of the right side plate of the square chamber shell, and a first high-vacuum gate valve is arranged at the wafer transport port. A side air inlet is provided at the edge of the right side plate of the square chamber shell. An annular air chamber communicated with the side air inlet is fixedly arranged at the four peripheral edge parts of the inner side surface of the right side plate of the square chamber shell. A plurality of side air holes are distributed on the annular air chamber. A side air extraction port is provided at the center of the left side plate of the square chamber shell. An air extraction barrel with an opening facing leftward is arranged at the center of the inner side surface of the left side plate of the square chamber shell. The opening area of the air extraction barrel is larger than the area of the side air extraction port. A plurality of side air extraction holes are uniformly distributed at the bottom of the air extraction barrel. A bottom air extraction port is provided on the bottom plate of the square chamber shell. The electrode assembly includes a positive encapsulation electrode, a negative encapsulation electrode and four carrier plates each provided with a plurality of distribution holes. The four carrier plates are all horizontally arranged in the square chamber shell and are respectively the first carrier plate, the second carrier plate, the third carrier plate and the fourth carrier plate from top to bottom in sequence. The positive encapsulation electrode and the negative encapsulation electrode are both vertically and hermetically fixed on the left side plate of the square chamber shell. One ends of the positive encapsulation electrode and the negative encapsulation electrode are located outside the square chamber shell, and the other ends of the positive encapsulation electrode and the negative encapsulation electrode are located inside the square chamber shell and are correspondingly connected to the four carrier plates. The third carrier plate is aligned with the inner bottom surface of the valve port of the first vacuum gate valve and is provided with wafer lifting columns for placing wafers thereon.
[0007] Instructions for use and principle: 1) Two air inlets, namely the upper air inlet and the side air inlet, are provided. During use, the upper air inlet and the side air inlet intake air simultaneously, which is convenient for gas to enter the square chamber shell more evenly and improves the uniformity of plasma; 2) By providing two dispersion plates and arranging the upper air holes on the two dispersion plates staggeredly, the gas entering from the upper air inlet can enter the square chamber shell more evenly; 3) By providing an annular air chamber, the gas entering from the side air inlet can enter the square chamber shell more evenly, thereby further improving the uniformity of plasma; 4) Two air extraction ports, namely the side air extraction port and the bottom air extraction port, are equipped. During use, a dry pump arranged at the side air extraction port and a molecular pump arranged at the bottom air extraction port cooperate to extract air to achieve the ultimate vacuum degree in the square chamber shell. At the same time, the design of the air extraction barrel also utilizes the uniform flow of gas to further improve the uniformity of plasma; 5) A plurality of distribution holes provided on each carrier plate further improve the uniformity of plasma; 6) During use, one ends of the positive encapsulation electrode and the negative encapsulation electrode are located outside the chamber shell, which is convenient for connecting to an external power source unit.
[0008] Further, there are two positive encapsulation electrodes and two negative encapsulation electrodes. The two positive encapsulation electrodes and the two negative encapsulation electrodes are respectively located on the front and back sides of the side air extraction port. The paired positive encapsulation electrodes and paired negative encapsulation electrodes are provided to facilitate matching with two sets of power sources, that is, the two positive encapsulation electrodes are respectively connected to the positive poles of the two sets of power sources, and the two negative encapsulation electrodes are respectively connected to the negative poles of the two sets of power sources, which is convenient for selecting power sources according to actual working conditions and increases process flexibility.
[0009] Further, the two positive encapsulation electrodes are distributed vertically, and the other ends of the two positive encapsulation electrodes are connected by a positive electrode connecting plate. The two negative encapsulation electrodes are distributed vertically, and the other ends of the two negative encapsulation electrodes are connected by a negative electrode connecting plate. For example, when the two sets of power sources are a 13.56 MHz AE radio frequency power source and a matching network, and a 40 kHz intermediate frequency power source and a transformer respectively, when the 13.56 MHz AE radio frequency power source and the matching network are selected as the power source, the first carrier plate, the second carrier plate, and the fourth carrier plate are connected to the positive electrode connecting plate, and the third carrier plate is connected to the negative electrode connecting plate, forming a positive-negative-positive-negative electrode arrangement; when the 40 kHz intermediate frequency power source and the transformer are selected as the power source, the first carrier plate and the third carrier plate are connected to the negative electrode connecting plate, and the second carrier plate and the fourth carrier plate are connected to the positive electrode connecting plate, forming a negative-positive-negative-positive electrode distribution. After experimental and simulation comparison, when the 13.56 MHz AE radio frequency power source and the matching network are selected as the power source, the positive-negative-positive-negative electrode arrangement is the most suitable, and the activated plasma is the most uniform, and the surface quality of the wafer is the best; when the 40 kHz intermediate frequency power source and the transformer are selected as the power source, the negative-positive-negative-positive electrode distribution is the most suitable, and the activated plasma is the most uniform, and the surface quality of the wafer is the best. When in use, the two sets of power sources can select the power source according to actual working conditions, increasing process flexibility.
[0010] Further, the electrode assembly further includes four L-shaped mounting blocks, eight front ceramic cylindrical supports, and eight rear ceramic cylindrical supports. The first carrier plate, the second carrier plate, the third carrier plate, and the fourth carrier plate are all square plates. The axes of the eight front ceramic cylindrical supports and the eight rear ceramic cylindrical supports are all arranged in the front-rear direction. One end of each of the eight front ceramic cylindrical supports is fixed to the inner side surface of the front side plate of the square cavity housing, and the other ends of the eight front ceramic cylindrical supports are respectively supported in groups of two under the front ends of the four carrier plates. One end of each of the eight rear ceramic cylindrical supports is fixed to the inner side surface of the rear side plate of the square cavity housing, and the other ends of the eight rear ceramic cylindrical supports are respectively supported in groups of two under the rear ends of the four carrier plates. Connecting ears are integrally fixed to the left front or left rear ends of the first carrier plate, the second carrier plate, the third carrier plate, and the fourth carrier plate. Four mounting grooves adapted to the vertical portions of the L-shaped mounting blocks are respectively provided on the positive electrode connecting plate and the negative electrode connecting plate from top to bottom. The connecting ears are bolted to the horizontal portions of the corresponding L-shaped mounting blocks, and the vertical portions of the L-shaped mounting blocks are bolted to the corresponding mounting grooves on the positive electrode connecting plate or the negative electrode connecting plate. The connection structures of the four carrier plates are specified and simplified, and the design of the L-shaped mounting blocks facilitates different electrode arrangements for the four carrier plates according to actual working conditions.
[0011] Further, a first shielding box is externally provided for the two positive encapsulated electrodes, and a second shielding box is externally provided for the two negative encapsulated electrodes. Heat dissipation holes are provided on both the first shielding box and the second shielding box, and axial flow fans are provided inside both the first shielding box and the second shielding box to ensure the normal use of the two positive encapsulated electrodes and the two negative encapsulated electrodes.
[0012] Further, a spare air extraction port is further provided on the bottom plate of the square cavity housing, and a hollow conversion cavity is fixed to the inner side surface of the bottom plate. A central air extraction port corresponding to the center position of the bottom plate of the square cavity housing is provided on the top surface of one end of the hollow conversion cavity, and a conversion port communicating with the spare air extraction port is provided on the bottom surface of the other end of the hollow conversion cavity. The spare air extraction port can be used together with the side air extraction port and the bottom air extraction port to extract air from the square cavity housing according to actual working conditions in the future, so as to increase the activation efficiency and the flexibility of the process. At the same time, due to the installation of the molecular pump during use, the spare air extraction port cannot be provided at the center position of the bottom plate, and the design of the hollow conversion cavity ensures that gas can be extracted from the center, making the gas flow more uniform, thereby improving the uniformity of the plasma.
[0013] Further, reflecting plates are fixed to the inner side surfaces of the top plate, the bottom plate, the front side plate, the rear side plate, the left side plate, and the right side plate of the square cavity housing, and the function is to reflect or gather the high-frequency or intermediate-frequency alternating electromagnetic field energy generated by the plasma power source back into the square cavity housing more efficiently, so as to improve the plasma energy conversion efficiency.
[0014] Furthermore, heating covers are fixed on the outer sides of the top plate, front side plate, rear side plate, and right side plate of the square cavity shell. By heating the square cavity shell, the gas in the top plate, front side plate, rear side plate, and right side plate is released, enabling the square cavity shell to achieve the optimal outgassing rate.
[0015] Furthermore, a thermocouple is arranged inside the square cavity shell to measure the temperature inside the square cavity shell in real time.
[0016] Furthermore, there are 3 wafer lifting posts distributed in a triangular shape, which is convenient for placing wafers with larger sizes or complex structures.
[0017] The beneficial effects produced by the present invention are as follows: The device described in the present invention designs the gas flow field uniformity for the intake and exhaust, improves the uniformity of the plasma, thereby improving the surface quality of the wafer, and further improving the bonding quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The accompanying drawings herein are incorporated into the specification and form a part of this specification, showing embodiments consistent with the present invention, and are used together with the specification to explain the principles of the present invention.
[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0020] Figure 1 Schematic diagram of the overall structure of the plasma activation process chamber Figure 1 ; Figure 2 Schematic diagram of the overall structure of the plasma activation process chamber Figure 2 ; Figure 3 Schematic diagram of the structure of the square cavity shell after removing the front side plate; Figure 4 Schematic diagram of the assembly structure of the square cavity shell after removing the front side plate, the exhaust barrel, the dispersion plate, and the annular intake chamber Figure 1 ; Figure 5 Schematic diagram of the assembly structure of the square cavity shell after removing the front side plate, the exhaust barrel, the dispersion plate, and the annular intake chamber Figure 2 .
[0021] In the figure: 1 - square cavity shell, 2 - upper air inlet, 3 - dispersion plate, 4 - wafer transport port, 5 - first high-vacuum gate valve, 6 - side air inlet, 7 - annular air inlet cavity, 8 - side air extraction port, 9 - air extraction barrel, 10 - bottom air extraction port, 11 - positive packaging electrode, 12 - negative packaging electrode, 13 - first carrier plate, 14 - second carrier plate, 15 - third carrier plate, 16 - fourth carrier plate, 17 - wafer lifting post, 18 - positive electrode connecting plate, 19 - negative electrode connecting plate, 20 - L-shaped mounting block, 21 - front ceramic cylindrical support, 22 - first shielding box, 23 - second shielding box, 24 - spare air extraction port, 25 - hollow conversion cavity, 26 - central air extraction port, 27 - thermocouple, 28 - heating cover plate. Detailed implementation manners
[0022] In order to more clearly understand the above objects, features and advantages of the present invention, the solutions of the present invention will be further described below. It should be noted that, without conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.
[0023] In the description, it should be noted that the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. It should be noted that unless otherwise clearly defined and limited, the terms "mounted", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms can be understood according to specific situations.
[0024] Many specific details are set forth in the following description in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only a part of the embodiments of the present invention, rather than all the embodiments.
[0025] The following will detail the specific embodiments of the present invention with reference to the accompanying drawings.
[0026] As Figures 1 to 5As shown in the figure, a plasma activation process chamber for high-vacuum wafer bonding includes a square chamber shell 1 and an electrode assembly. The square chamber shell 1 is formed by hermetically welding a top plate, a bottom plate, a front side plate, a rear side plate, a left side plate and a right side plate. An upper air inlet 2 is provided on the top plate of the square chamber shell 1. Two dispersion plates 3 distributed vertically are fixed at a position below the upper air inlet 2 in the square chamber shell 1. There is a spacing between the two dispersion plates 3. A plurality of upper air holes are distributed on both of the two dispersion plates 3, and the upper air holes on the two dispersion plates 3 are arranged staggeredly. A wafer transportation port 4 is provided at the center of the right side plate of the square chamber shell 1. A first high-vacuum gate valve 5 is provided at the wafer transportation port 4. A side air inlet 6 is provided at the edge of the right side plate of the square chamber shell 1. An annular air chamber 7 communicated with the side air inlet 6 is fixed at the four peripheral edge parts of the inner side surface of the right side plate of the square chamber shell 1. A plurality of side air holes are distributed on the annular air chamber 7. A side air extraction port 8 is provided at the center of the left side plate of the square chamber shell 1. An air extraction barrel 9 with an opening facing leftward is provided at the center of the inner side surface of the left side plate of the square chamber shell 1. The opening area of the air extraction barrel 9 is larger than the area of the side air extraction port 8. A plurality of side air extraction holes are evenly distributed on the bottom of the air extraction barrel 9. A bottom air extraction port 10 is provided on the bottom plate of the square chamber shell 1. The electrode assembly includes a positive encapsulated electrode 11, a negative encapsulated electrode 12 and four carrier plates each provided with a plurality of distribution holes. The four carrier plates are all horizontally arranged in the square chamber shell 1 and are the first carrier plate 13, the second carrier plate 14, the third carrier plate 15 and the fourth carrier plate 16 from top to bottom in sequence. The positive encapsulated electrode 11 and the negative encapsulated electrode 12 are both vertically and hermetically fixed on the left side plate of the square chamber shell 1. One ends of the positive encapsulated electrode 11 and the negative encapsulated electrode 12 are located outside the square chamber shell 1, and the other ends of the positive encapsulated electrode 11 and the negative encapsulated electrode 12 are located inside the square chamber shell 1 and are correspondingly connected to the four carrier plates. The third carrier plate 15 is aligned with the inner bottom surface of the valve port of the first vacuum gate valve and is provided with wafer lifting columns 17 for placing wafers thereon.
[0027] Instructions for Use and Principle: 1) Two air inlets are provided, namely the upper air inlet 2 and the side air inlet 6. When in use, the upper air inlet 2 and the side air inlet 6 intake air simultaneously, which facilitates the more uniform entry of gas into the square cavity shell 1 and improves the uniformity of the plasma; 2) By providing two dispersing plates 3 and arranging the upper air holes on the two dispersing plates 3 staggeredly, the gas entering from the upper air inlet 2 can enter the square cavity shell 1 more uniformly; 3) By providing an annular air intake cavity 7, the gas entering from the side air inlet 6 can enter the square cavity shell 1 more uniformly, thereby further improving the uniformity of the plasma; 4) Two air extraction ports are equipped, namely the side air extraction port 8 and the bottom air extraction port 10. When in use, a dry pump arranged at the side air extraction port 8 and a molecular pump arranged at the bottom air extraction port 10 cooperate to extract air to achieve the ultimate vacuum degree in the square cavity shell 1. At the same time, the design of the air extraction barrel 9 also utilizes the uniform flow of gas to further improve the uniformity of the plasma; 5) Multiple distribution holes provided on each carrier plate further improve the uniformity of the plasma; 6) When in use, one end of the positive encapsulation electrode 11 and the negative encapsulation electrode 12 is located outside the cavity shell, which is convenient for connecting to an external power source unit.
[0028] During specific implementation, there are two positive encapsulation electrodes 11 and two negative encapsulation electrodes 12. The two positive encapsulation electrodes 11 and the two negative encapsulation electrodes 12 are respectively located on the front and back sides of the side air extraction port 8. The provision of paired positive encapsulation electrodes 11 and paired negative encapsulation electrodes 12 is to facilitate matching with two sets of power sources. That is, the two positive encapsulation electrodes 11 are respectively connected to the positive poles of the two sets of power sources, and the two negative encapsulation electrodes 12 are respectively connected to the negative poles of the two sets of power sources, which is convenient for selecting the power source according to the actual working condition requirements and increases the process flexibility.
[0029] In specific implementation, two positive encapsulated electrodes 11 are distributed vertically. The other ends of the two positive encapsulated electrodes 11 are connected by a positive electrode connecting plate 18. Two negative encapsulated electrodes 12 are distributed vertically. The other ends of the two negative encapsulated electrodes 12 are connected by a negative electrode connecting plate 19. When two sets of power sources are a 13.56 MHz AE radio frequency power source and a matching network, and a 40 kHz intermediate frequency power source and a transformer respectively, when the 13.56 MHz AE radio frequency power source and the matching network are selected as the power source, the first carrier plate 13, the second carrier plate 14, and the fourth carrier plate 16 are connected to the positive electrode connecting plate 18, and the third carrier plate 15 is connected to the negative electrode connecting plate 19, forming a positive-negative-positive-negative electrode arrangement; when the 40 kHz intermediate frequency power source and the transformer are selected as the power source, the first carrier plate 13 and the third carrier plate 15 are connected to the negative electrode connecting plate 19, and the second carrier plate 14 and the fourth carrier plate 16 are connected to the positive electrode connecting plate 18, forming a negative-positive-negative-positive electrode distribution. Through experimental and simulation comparison, when the 13.56 MHz AE radio frequency power source and the matching network are selected as the power source, the positive-negative-positive-negative electrode arrangement is the most suitable, the activated plasma is the most uniform, and the surface quality of the wafer is the best; when the 40 kHz intermediate frequency power source and the transformer are selected as the power source, the negative-positive-negative-positive electrode distribution is the most suitable, the activated plasma is the most uniform, and the surface quality of the wafer is the best. When in use, the two sets of power sources can select the power source according to the actual working conditions, increasing the process flexibility.
[0030] In specific implementation, the electrode assembly further includes four L-shaped mounting blocks 20, eight front ceramic cylindrical supports 21, and eight rear ceramic cylindrical supports. The first carrier plate 13, the second carrier plate 14, the third carrier plate 15, and the fourth carrier plate 16 are all square plates. The axial directions of the eight front ceramic cylindrical supports 21 and the eight rear ceramic cylindrical supports are all arranged in the front-rear direction. One end of the eight front ceramic cylindrical supports 21 is fixed to the inner side surface of the front side plate of the square cavity shell 1, and the other ends of the eight front ceramic cylindrical supports 21 are respectively supported in pairs below the front ends of the four carrier plates. One end of the eight rear ceramic cylindrical supports is fixed to the inner side surface of the rear side plate of the square cavity shell 1, and the other ends of the eight rear ceramic cylindrical supports are respectively supported in pairs below the rear ends of the four carrier plates. Connecting ears are integrally fixed to the left front or left rear ends of the first carrier plate 13, the second carrier plate 14, the third carrier plate 15, and the fourth carrier plate 16. Four mounting grooves adapted to the vertical portions of the L-shaped mounting blocks 20 are sequentially provided from top to bottom on both the positive electrode connecting plate 18 and the negative electrode connecting plate 19. The connecting ears are bolted to the horizontal portions of the corresponding L-shaped mounting blocks 20, and the vertical portions of the L-shaped mounting blocks 20 are bolted to the corresponding mounting grooves on the positive electrode connecting plate 18 or the negative electrode connecting plate 19. The connection structures of the four carrier plates are specified and simplified, and the design of the L-shaped mounting blocks 20 facilitates different electrode arrangements for the four carrier plates according to the actual working conditions.
[0031] During specific implementation, a first shielding box 22 is arranged outside the two positive encapsulation electrodes 11, and a second shielding box 23 is arranged outside the two negative encapsulation electrodes 12. Heat dissipation holes are provided on both the first shielding box 22 and the second shielding box 23, and axial flow fans are arranged inside both the first shielding box 22 and the second shielding box 23 to ensure the normal use of the two positive encapsulation electrodes 11 and the two negative encapsulation electrodes 12.
[0032] During specific implementation, a spare air extraction port 24 is further provided on the bottom plate of the square cavity shell 1, and a hollow conversion cavity 25 is fixedly arranged on the inner side surface of the bottom plate. A central air extraction port 26 corresponding to the center position of the bottom plate of the square cavity shell 1 is arranged on the top surface of one end of the hollow conversion cavity 25, and a conversion port communicating with the spare air extraction port 24 is arranged on the bottom surface of the other end of the hollow conversion cavity 25. The spare air extraction port 24 can be used together with the side air extraction port 8 and the bottom air extraction port 10 to extract air from the square cavity shell 1 according to the actual working conditions subsequently, so as to increase the activation efficiency and the flexibility of the process. At the same time, due to the installation of the molecular pump during use, the spare air extraction port 24 cannot be arranged at the center position of the bottom plate, while the design of the hollow conversion cavity 25 ensures that the gas can be extracted from the center, making the gas flow more uniform, thereby improving the uniformity of the plasma.
[0033] During specific implementation, reflection plates (specifically, the reflection plates are stainless steel mirror reflection plates) are fixedly arranged on the inner side surfaces of the top plate, the bottom plate, the front side plate, the rear side plate, the left side plate and the right side plate of the square cavity shell 1, and the function is to reflect or gather the high-frequency or medium-frequency alternating electromagnetic field energy generated by the plasma power source back into the square cavity shell more efficiently, so as to improve the plasma energy conversion efficiency.
[0034] During specific implementation, heating covers 28 are fixedly arranged on the outer side surfaces of the top plate, the front side plate, the rear side plate and the right side plate of the square cavity shell 1, and the gas in the top plate, the front side plate, the rear side plate and the right side plate is released by heating the square cavity shell 1, so that the square cavity shell 1 reaches the best outgassing rate.
[0035] In this specific embodiment, a thermocouple 27 is arranged inside the square cavity shell 1 for real-time monitoring of the temperature inside the square cavity shell 1.
[0036] In this specific embodiment, there are 3 wafer lifting posts 17 which are distributed in a triangular shape, facilitating the placement of wafers with larger sizes or complex structures.
[0037] The above are only specific embodiments of the present invention, enabling those skilled in the art to understand or implement the present invention. Although the above embodiments have been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the foregoing embodiments, and they should all be covered by the protection scope of the claims.
Claims
1. A plasma activation process chamber for high-vacuum wafer bonding, characterized in that, It includes a square cavity housing (1) and an electrode assembly. The square cavity housing (1) is sealed and welded by a top plate, a bottom plate, a front side plate, a rear side plate, a left side plate and a right side plate. An upper air inlet (2) is provided on the top plate of the square cavity housing (1). Two dispersing plates (3) distributed vertically are fixed at a position below the upper air inlet (2) inside the square cavity housing (1). There is a spacing between the two dispersing plates (3). A plurality of upper air inlet holes are distributed on both of the two dispersing plates (3), and the upper air inlet holes on the two dispersing plates (3) are arranged staggeredly. A wafer transfer port (4) is provided at the center of the right side plate of the square cavity housing (1). A first high-vacuum gate valve (5) is provided at the wafer transfer port (4). A side air inlet (6) is provided at the edge of the right side plate of the square cavity housing (1). An annular air inlet cavity (7) communicated with the side air inlet (6) is fixed at the four peripheral edge parts of the inner side surface of the right side plate of the square cavity housing (1). A plurality of side air inlet holes are distributed on the annular air inlet cavity (7). A side air extraction port (8) is provided at the center of the left side plate of the square cavity housing (1). An air extraction barrel (9) with an opening facing leftward is provided at the center of the inner side surface of the left side plate of the square cavity housing (1). The opening area of the air extraction barrel (9) is larger than the area of the side air extraction port (8). A plurality of side air extraction holes are evenly distributed on the bottom of the air extraction barrel (9). A bottom air extraction port (10) is provided on the bottom plate of the square cavity housing (1). The electrode assembly includes a positive encapsulated electrode (11), a negative encapsulated electrode (12), and four carrier plates each provided with a plurality of distribution holes. The four carrier plates are all horizontally arranged inside the square cavity housing (1) and are successively the first carrier plate (13), the second carrier plate (14), the third carrier plate (15), and the fourth carrier plate (16) from top to bottom. The positive encapsulated electrode (11) and the negative encapsulated electrode (12) are both vertically and hermetically fixed to the left side plate of the square cavity housing (1). One ends of the positive encapsulated electrode (11) and the negative encapsulated electrode (12) are located outside the square cavity housing (1), and the other ends of the positive encapsulated electrode (11) and the negative encapsulated electrode (12) are located inside the square cavity housing (1) and are correspondingly connected to the four carrier plates. The third carrier plate (15) is aligned with the inner bottom surface of the valve port of the first vacuum gate valve and is provided with wafer lifting columns (17) for placing wafers thereon.
2. The plasma activation process chamber for high-vacuum wafer bonding according to claim 1, wherein There are two positive encapsulated electrodes (11) and two negative encapsulated electrodes (12). The two positive encapsulated electrodes (11) and the two negative encapsulated electrodes (12) are respectively located on the front and rear sides of the side air extraction port (8).
3. A plasma activation process chamber for high-vacuum wafer bonding according to claim 2, characterized in that, The two positive encapsulated electrodes (11) are distributed vertically, and the other ends between the two positive encapsulated electrodes (11) are connected by a positive electrode connecting plate (18). The two negative encapsulated electrodes (12) are distributed vertically, and the other ends between the two negative encapsulated electrodes (12) are connected by a negative electrode connecting plate (19).
4. A plasma activation process chamber for high-vacuum wafer bonding according to claim 3, characterized in that The first carrier plate (13), the second carrier plate (14), and the fourth carrier plate (16) are connected to the positive electrode connecting plate (18), and the third carrier plate (15) is connected to the negative electrode connecting plate (19), forming a positive-negative-positive-negative electrode arrangement.
5. A plasma activation process chamber for high-vacuum wafer bonding according to claim 4, characterized in that, The first load plate (13) and the third load plate (15) are connected to the negative electrode connection plate (19), and the second load plate (14) and the fourth load plate (16) are connected to the positive electrode connection plate (18), forming a negative-positive-negative-positive electrode distribution.
6. A plasma activation process chamber for high-vacuum wafer bonding according to claim 5, characterized in that, The electrode assembly further includes four L-shaped mounting blocks (20), eight front ceramic cylindrical supports (21), and eight rear ceramic cylindrical supports. The first load plate (13), the second load plate (14), the third load plate (15), and the fourth load plate (16) are all square plates. The axes of the eight front ceramic cylindrical supports (21) and the eight rear ceramic cylindrical supports are all arranged in the front-rear direction. One end of the eight front ceramic cylindrical supports (21) is fixed to the inner side surface of the front side plate of the square cavity housing (1), and the other ends of the eight front ceramic cylindrical supports (21) are respectively supported in pairs below the front end parts of the four load plates. One end of the eight rear ceramic cylindrical supports is fixed to the inner side surface of the rear side plate of the square cavity housing (1), and the other ends of the eight rear ceramic cylindrical supports are respectively supported in pairs below the rear end parts of the four load plates. Connecting ears are integrally fixed to the left front or left rear end parts of the first load plate (13), the second load plate (14), the third load plate (15), and the fourth load plate (16). Four mounting grooves adapted to the vertical parts of the L-shaped mounting blocks (20) are sequentially provided from top to bottom on both the positive electrode connection plate (18) and the negative electrode connection plate (19). The connecting ears are bolted to the horizontal parts of the corresponding L-shaped mounting blocks (20), and the vertical parts of the L-shaped mounting blocks (20) are bolted to the corresponding mounting grooves on the positive electrode connection plate (18) or the negative electrode connection plate (19).
7. A plasma activation process chamber for high-vacuum wafer bonding according to claim 6, characterized in that, A first shielding box (22) is externally provided for the two positive encapsulated electrodes (11), and a second shielding box (23) is externally provided for the two negative encapsulated electrodes (12). Heat dissipation holes are provided on both the first shielding box (22) and the second shielding box (23), and axial flow fans are provided inside both the first shielding box (22) and the second shielding box (23).
8. A plasma activation process chamber for high-vacuum wafer bonding according to claim 7, characterized in that, A spare air extraction port (24) is further provided on the bottom plate of the square cavity housing (1), and a hollow conversion cavity (25) is fixed to the inner side surface of the bottom plate. A central air extraction port (26) corresponding to the center position of the bottom plate of the square cavity housing (1) is provided on the top surface of one end of the hollow conversion cavity (25), and a conversion port communicating with the spare air extraction port (24) is provided on the bottom surface of the other end of the hollow conversion cavity (25).
9. A plasma activation process chamber for high-vacuum wafer bonding according to claim 8, characterized in that, Reflecting plates are fixed to the inner side surfaces of the top plate, the bottom plate, the front side plate, the rear side plate, the left side plate, and the right side plate of the square cavity housing (1).
10. A plasma activation process chamber for high-vacuum wafer bonding according to claim 9, characterized in that, Heating covers (28) are fixed to the outer side surfaces of the top plate, the front side plate, the rear side plate, and the right side plate of the square cavity housing (1).