Gallium nitride-based semiconductor laser element

Abstract

The invention discloses a gallium nitride-based semiconductor laser element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top. The light field localization layer comprises a first light field localization layer, a second light field localization layer and a third light field localization layer. According to the invention, photon Moire superlattices with arbitrary symmetry and distortion angles are formed through specifically designed polar optical phonon energy distribution, specifically designed radiation recombination coefficient distribution and specifically designed refractive index coefficient distribution, long-distance coupling between the photon lattices is constructed, and broadband light-captured two-dimensional plasmons are formed. Laser light field localization is induced, optical chirality and photon horizontal directional energy band lasing are enhanced, light absorption internal loss of a laser element is reduced, and limiting factors are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular, to a gallium nitride-based semiconductor laser element. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapon, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers, and the classification methods are also diverse. The main types include solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can be in the watt level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the milliwatt level. 2) The operating current density of lasers reaches KA / cm 2 which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect. 3) Light-emitting diodes undergo spontaneous transition radiation, which is incoherent light that jumps from a high energy level to a low energy level without external influence, while lasers are stimulated transition radiation, and the induced photon energy should be equal to the energy difference between the electron transitions, generating completely identical coherent light of photons and induced photons. 4) The principles are different: light-emitting diodes generate radiative recombination light when electrons and holes jump to quantum wells or p-n junctions under the action of an external voltage, while lasers can only lasing when the lasing conditions are met, and it is necessary to satisfy the inverted distribution of carriers in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is satisfied, the gain is greater than the loss, and finally, laser light is output.

[0004] The nitride semiconductor laser has the following problems: 1) The large internal lattice mismatch and strain cause a strong polarization effect, and the strong quantum-confined Stark effect (QCSE) severely limits the improvement of the electrical lasing gain of the laser; 2) The optical waveguide has high absorption loss. Intrinsic carbon impurities in the p-type semiconductor can compensate for acceptors and disrupt the p-type, etc. The ionization rate of p-type doping is low. A large number of un-ionized Mg acceptor impurities will lead to an increase in internal optical loss. Moreover, the refractive index dispersion and confinement factor of the laser decrease with the increase of wavelength, resulting in a reduction in the modal gain of the laser; 3) Increasing the thickness of the lower confinement layer can reduce the refractive index of the confinement layer, but increasing the thickness of the lower confinement layer will also limit the composition control range, and easily cause problems such as cracking, bending, and quality degradation. At the same time, the leakage of the optical field mode to the substrate to form a standing wave will lead to low substrate mode suppression efficiency and poor far-field image FFP quality; 4) The Mg acceptor in the p-type semiconductor has a large activation energy and low ionization efficiency. The hole concentration is much lower than the electron concentration, and the hole mobility is much smaller than the electron mobility. Moreover, problems such as the quantum well polarization electric field increasing the hole injection barrier and holes overflowing from the active layer result in uneven and low-efficiency hole injection, leading to severe asymmetry and mismatch between electrons and holes in the quantum well, electron leakage, and carrier delocalization. Holes are more difficult to transport in the quantum well, and carrier injection is uneven, resulting in uneven gain. At the same time, the gain spectrum of the laser broadens, and the peak gain decreases, leading to an increase in the threshold current and a decrease in the slope efficiency of the laser; 5) The valence band offset of the laser increases, making it more difficult for holes to transport in the quantum well, resulting in uneven carrier injection and uneven gain. Summary of the Invention

[0005] The present invention proposes a gallium nitride-based semiconductor laser element. By specifically designing the polar optical phonon energy distribution, the radiative recombination coefficient distribution, and the refractive index coefficient distribution, a photonic Moiré superlattice with arbitrary symmetry and twist angle is formed, constructing long-distance coupling between photonic lattices, forming two-dimensional surface plasmons for broadband light trapping, inducing laser light field localization, enhancing optical chirality and photon-level directional band lasing, reducing the internal optical absorption loss of the laser element, and improving the confinement factor.

[0006] A gallium nitride-based semiconductor laser element provided by the present invention sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer from bottom to top. A light field localization layer is disposed above the upper confinement layer, and the light field localization layer includes a first light field localization layer, a second light field localization layer, and a third light field localization layer.

[0007] Preferably, the polar optical phonon energy distribution of the first light field localization layer has a curve distribution of the function y = A + B*lnx - C*x; the polar optical phonon energy distribution of the second light field localization layer has a constant function curve distribution; the polar optical phonon energy distribution of the third light field localization layer has a function y = D + E*lnx / e xCurve distribution; the polar optical phonon energy of the first optical field localization layer is d, the polar optical phonon energy of the second optical field localization layer is e, and the polar optical phonon energy of the third optical field localization layer is f, where: 20 ≤ f ≤ e ≤ d ≤ 300 (meV).

[0008] Preferably, the radiative recombination coefficient distribution of the first optical field localization layer has a function y = F + G*e x Curve distribution in the first quadrant of the function y = F + G*e / x; the radiative recombination coefficient distribution of the second optical field localization layer has a constant function curve distribution; the radiative recombination coefficient distribution of the third optical field localization layer has a function y = H + I*sinx / x 2 Curve distribution in the first quadrant; the radiative recombination coefficient of the first optical field localization layer is g, the radiative recombination coefficient of the second optical field localization layer is h, and the radiative recombination coefficient of the third optical field localization layer is i, where: 1E-12 ≤ g ≤ h ≤ i ≤ 1E-9 (cm 3 / s).

[0009] Preferably, the refractive index coefficient distribution of the first optical field localization layer has a function y = J + K*e x +L*e -x Curve distribution in the first quadrant; the refractive index coefficient distribution of the second optical field localization layer has a constant function curve distribution; the refractive index coefficient distribution of the third optical field localization layer has a function y = M + N*lnx + 1 / x - 1 curve distribution; the refractive index coefficient of the first optical field localization layer is m, the refractive index coefficient of the second optical field localization layer is n, and the refractive index coefficient of the third optical field localization layer is p, where: 0.1 ≤ m ≤ n ≤ p ≤ 10.

[0010] Preferably, the piezoelectric polarization coefficient distribution of the first optical field localization layer has a function y = O + P*lnx - Q*e x Curve distribution; the piezoelectric polarization coefficient distribution of the second optical field localization layer has a constant function curve distribution; the piezoelectric polarization coefficient distribution of the third optical field localization layer has a function y = R + S*x / e x Curve distribution; the piezoelectric polarization coefficient of the first optical field localization layer is q, the piezoelectric polarization coefficient of the second optical field localization layer is r, and the piezoelectric polarization coefficient of the third optical field localization layer is s, where: 0.2 ≤ s ≤ r ≤ q ≤ 20 (C / m 2 )

[0011] Preferably, the optical absorption coefficient distribution of the first optical field localization layer has a function y = T + U*e -xThe light absorption coefficient coefficient distribution of the first optical field localization layer has a curve distribution of +Z*x - 1; the light absorption coefficient coefficient distribution of the second optical field localization layer has a constant function curve distribution; the light absorption coefficient coefficient distribution of the third optical field localization layer has a curve distribution of the function y = V + W*cosx / x in the first and fourth quadrants; the light absorption coefficient coefficient of the first optical field localization layer is t, the light absorption coefficient coefficient of the second optical field localization layer is u, and the light absorption coefficient coefficient of the third optical field localization layer is v, where: 1E3 ≤ t ≤ u ≤ v ≤ 1E6 (cm -1 ).

[0012] Preferably, the optical field localization layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0013] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, the number of periods is 3 ≥ m ≥ 1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 - 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 - 200 angstroms.

[0014] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0015] Preferably, the substrate includes sapphire, silicon, Ge, SiC, AlN, Cu, Mo, TiW, W, CuW, GaN, GaAs, InP, InAs, GaSb, diamond, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x 、sapphire / SiO2 / SiN x composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate, any one of them.

[0016] Compared with the prior art, a gallium nitride-based semiconductor laser device provided by an embodiment of the present invention has the following beneficial effects:

[0017] 1. By a specifically designed polar optical phonon energy distribution, a specifically designed radiative recombination coefficient distribution, and a specifically designed refractive index coefficient distribution, a photonic moiré superlattice with arbitrary symmetry and twist angle is formed, constructing long-distance coupling between photonic lattices, forming two-dimensional surface plasmons for broadband light trapping, inducing laser light field localization, enhancing optical chirality and photon-level directional band lasing, reducing the internal optical absorption loss of the laser device, and improving the confinement factor.

[0018] 2. By a specifically designed piezoelectric polarization coefficient distribution and a specifically designed optical absorption coefficient distribution, long-distance phase coherence is constructed, forming far-field interlayer lattice coupling, reducing the fluctuations between laser modes and the number of modes, improving the laser coherence, suppressing the leakage of the light field mode, improving the far-field image quality, improving the beam quality factor, and reducing the focused spot size. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a schematic structural diagram of a gallium nitride-based semiconductor laser device provided by the present invention.

[0020] Figure 2 is a SIMS secondary ion mass spectrometry diagram of a gallium nitride-based semiconductor laser device provided by the present invention.

[0021] Indications in the figure: 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer; 105: Upper confinement layer; 106: Optical field localization layer; 106a: First optical field localization layer; 106b: Second optical field localization layer; 106c: Third optical field localization layer. Specific implementation manners

[0022] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0023] To solve the above problems, a gallium nitride-based semiconductor laser element provided in the embodiments of the present application will be introduced and described in detail through the following specific embodiments.

[0024] Referring to Figure 1-2 , a gallium nitride-based semiconductor laser element provided by the present invention sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 from bottom to top. An optical field localization layer 106 is disposed above the upper confinement layer 105. The optical field localization layer 106 includes a first optical field localization layer 106a, a second optical field localization layer 106b, and a third optical field localization layer 106c.

[0025] Among them, the optical field localization layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0026] The polar optical phonon energy distribution of the first optical field localization layer 106a has a curve distribution of the function y = A + B*lnx - C*x; the polar optical phonon energy distribution of the second optical field localization layer 106b has a constant function curve distribution; the polar optical phonon energy distribution of the third optical field localization layer 106c has the function y = D + E*lnx / e xCurved distribution; the polar optical phonon energy of the first optical field localization layer 106a is d, the polar optical phonon energy of the second optical field localization layer 106b is e, and the polar optical phonon energy of the third optical field localization layer 106c is f, where: 20 ≤ f ≤ e ≤ d ≤ 300 (meV).

[0027] The radiative recombination coefficient distribution of the first optical field localization layer 106a has a function y = F + G*e x / x curve distribution in the first quadrant; the radiative recombination coefficient distribution of the second optical field localization layer 106b has a constant function curve distribution; the radiative recombination coefficient distribution of the third optical field localization layer 106c has a function y = H + I*sinx / x 2 Curve distribution in the first quadrant; the radiative recombination coefficient of the first optical field localization layer 106a is g, the radiative recombination coefficient of the second optical field localization layer 106b is h, and the radiative recombination coefficient of the third optical field localization layer 106c is i, where: 1E-12 ≤ g ≤ h ≤ i ≤ 1E-9 (cm 3 / s).

[0028] The refractive index coefficient distribution of the first optical field localization layer 106a has a function y = J + K*e x +L*e -x Curve distribution in the first quadrant; the refractive index coefficient distribution of the second optical field localization layer 106b has a constant function curve distribution; the refractive index coefficient distribution of the third optical field localization layer 106c has a function y = M + N*lnx + 1 / x - 1 curve distribution; the refractive index coefficient of the first optical field localization layer 106a is m, the refractive index coefficient of the second optical field localization layer 106b is n, and the refractive index coefficient of the third optical field localization layer 106c is p, where: 0.1 ≤ m ≤ n ≤ p ≤ 10.

[0029] As can be seen from the above, the present invention forms a photonic moiré superlattice with arbitrary symmetry and twist angle through a specifically designed polar optical phonon energy distribution, a specifically designed radiative recombination coefficient distribution, and a specifically designed refractive index coefficient distribution, constructs long-distance coupling between photonic lattices, forms two-dimensional surface plasmons for broadband light trapping, induces laser optical field localization, enhances optical chirality and photon-level directional band lasing, reduces the internal loss of light absorption of laser components, and improves the confinement factor.

[0030] The piezoelectric polarization coefficient distribution of the first optical field localization layer 106a has a function y = O + P*lnx - Q*e x Curve distribution; the piezoelectric polarization coefficient distribution of the second optical field localization layer 106b has a constant function curve distribution; the piezoelectric polarization coefficient distribution of the third optical field localization layer 106c has a function y = R + S*x / e xCurved distribution; the piezoelectric polarization coefficient of the first optical field localization layer 106a is q, the piezoelectric polarization coefficient of the second optical field localization layer 106b is r, and the piezoelectric polarization coefficient of the third optical field localization layer 106c is s, where: 0.2 ≤ s ≤ r ≤ q ≤ 20 (C / m 2 ).

[0031] The light absorption coefficient distribution of the first optical field localization layer 106a has a function y = T + U*e -x + Z*x - 1 curved distribution; the light absorption coefficient distribution of the second optical field localization layer 106b has a constant function curved distribution; the light absorption coefficient distribution of the third optical field localization layer 106c has a function y = V + W*cosx / x first and fourth quadrant curved distribution; the light absorption coefficient of the first optical field localization layer 106a is t, the light absorption coefficient of the second optical field localization layer 106b is u, and the light absorption coefficient of the third optical field localization layer 106c is v, where: 1E3 ≤ t ≤ u ≤ v ≤ 1E6 (cm -1 ).

[0032] As can be seen from the above, the present invention constructs long-distance phase coherence through a specifically designed piezoelectric polarization coefficient distribution and a specifically designed light absorption coefficient distribution, forms far-field interlayer lattice coupling, reduces laser mode-to-mode fluctuations and the number of modes, improves laser coherence, suppresses light field mode leakage, improves far-field image quality, improves the beam quality factor, and reduces the focused spot size.

[0033] Specifically, as shown in the following table, compare the data of the traditional laser and the laser of the present invention.

[0034]

[0035] In the present invention, the active layer 103 is a periodic structure composed of well layers and barrier layers, where the number of periods satisfies 3≥m≥1. The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 to 100 angstroms. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 to 200 angstroms.

[0036] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0037] In the present invention, the substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, Cu, Mo, TiW, W, CuW, GaN, GaAs, InP, InAs, GaSb, diamond, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x 、sapphire / SiO2 / SiN x composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0038] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A gallium nitride-based semiconductor laser element, which sequentially includes a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105) from bottom to top, and is characterized in that, Above the upper confinement layer (105), there is a light field localization layer (106), and the light field localization layer (106) includes a first light field localization layer (106a), a second light field localization layer (106b), and a third light field localization layer (106c).

2. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that, The polar optical phonon energy distribution of the first optical field localization layer (106a) has a curve distribution of the function y = A + B*lnx - C*x; the polar optical phonon energy distribution of the second optical field localization layer (106b) has a constant function curve distribution; the polar optical phonon energy distribution of the third optical field localization layer (106c) has a function y = D + E*lnx / e x Curve distribution; the polar optical phonon energy of the first optical field localization layer (106a) is d, the polar optical phonon energy of the second optical field localization layer (106b) is e, and the polar optical phonon energy of the third optical field localization layer (106c) is f, where: 20 ≤ f ≤ e ≤ d ≤ 300 (meV).

3. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that, The radiative recombination coefficient distribution of the first optical field localization layer (106a) has a curve distribution of the function y = F + G*e x / x in the first quadrant; the radiative recombination coefficient distribution of the second optical field localization layer (106b) has a constant function curve distribution; the radiative recombination coefficient distribution of the third optical field localization layer (106c) has a curve distribution of the function y = H + I*sinx / x 2 in the first quadrant; the radiative recombination coefficient of the first optical field localization layer (106a) is g, the radiative recombination coefficient of the second optical field localization layer (106b) is h, and the radiative recombination coefficient of the third optical field localization layer (106c) is i, where: 1E-12 ≤ g ≤ h ≤ i ≤ 1E-9 (cm 3 / s).

4. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that, The refractive index coefficient distribution of the first optical field localization layer (106a) has a function y = J + K*e x + L*e -x curve distribution in the first quadrant; the refractive index coefficient distribution of the second optical field localization layer (106b) has a constant function curve distribution; the refractive index coefficient distribution of the third optical field localization layer (106c) has a function y = M + N*lnx + 1 / x - 1 curve distribution; the refractive index coefficient of the first optical field localization layer (106a) is m, the refractive index coefficient of the second optical field localization layer (106b) is n, and the refractive index coefficient of the third optical field localization layer (106c) is p, where: 0.1 ≤ m ≤ n ≤ p ≤ 10.

5. A gallium nitride-based semiconductor laser element according to claim 1, characterized in that, The piezoelectric polarization coefficient distribution of the first optical field localization layer (106a) has a function curve of y = O + P*lnx - Q*e x distribution; the piezoelectric polarization coefficient distribution of the second optical field localization layer (106b) has a constant function curve distribution; the piezoelectric polarization coefficient distribution of the third optical field localization layer (106c) has a function curve of y = R + S*x / e x distribution; the piezoelectric polarization coefficient of the first optical field localization layer (106a) is q, the piezoelectric polarization coefficient of the second optical field localization layer (106b) is r, and the piezoelectric polarization coefficient of the third optical field localization layer (106c) is s, where: 0.2 ≤ s ≤ r ≤ q ≤ 20 (C / m 2 ).

6. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that, The light absorption coefficient distribution of the first optical field localization layer (106a) has a function y = T + U*e -x + Z*x - 1 curve distribution; the light absorption coefficient distribution of the second optical field localization layer (106b) has a constant function curve distribution; the light absorption coefficient distribution of the third optical field localization layer (106c) has a function y = V + W*cosx / x first and fourth quadrant curve distribution; the light absorption coefficient of the first optical field localization layer (106a) is t, the light absorption coefficient of the second optical field localization layer (106b) is u, and the light absorption coefficient of the third optical field localization layer (106c) is v, where: 1E3 ≤ t ≤ u ≤ v ≤ 1E6 (cm -1 ).

7. The gallium nitride-based semiconductor laser device according to claim 1, wherein The light field localization layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

8. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that, The active layer (103) is a periodic structure composed of well layers and barrier layers, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 to 200 angstroms.

9. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that, The lower confinement layer (101), lower waveguide layer (102), upper waveguide layer (104), and upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The gallium nitride-based semiconductor laser element according to claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, Cu, Mo, TiW, W, CuW, GaN, GaAs, InP, InAs, GaSb, diamond, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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