Ion implantation apparatus and ion implantation method

Abstract

An ion implantation apparatus (10) is provided with: a beam generation device (12) configured so as to generate an ion beam to be irradiated on objects (W1, W2) to be processed, and to irradiate the ion beam over an irradiation range in which the size of the irradiation range in the vertical direction is larger than the size of the surface to be processed of the objects to be processed; a first holding device (40) configured so as to be able to hold the first object to be processed (W1), and configured so as to reciprocate the first object to be processed (W1) in the horizontal direction so that the first object to be processed (W1) held by the first holding device (40) crosses the irradiation range; and a second holding device (42) configured to be capable of holding a second object to be processed (W2), and configured to reciprocate the second object to be processed (W2) in the horizontal direction so that the second object to be processed (W2) held by the second holding device (42) crosses the irradiation range.

Description

Technical Field

[0001] The present invention relates to an ion implantation apparatus and an ion implantation method. Background Art

[0002] In a semiconductor element manufacturing process, for the purpose of changing the conductivity of a semiconductor, changing the crystal structure of the semiconductor, etc., a process of implanting ions into a semiconductor wafer (also referred to as an ion implantation process) is typically performed. An ion implantation apparatus is known that is configured to scan an ion beam in a horizontal direction and reciprocate a wafer in a vertical direction in order to implant ions over the entire surface of the wafer as an object to be processed (for example, refer to Patent Document 1).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2021-18904 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] Preferably, the productivity of the ion implantation process using the ion implantation apparatus is further improved.

[0008] One exemplary object of one aspect of the present invention is to provide a technique for improving the productivity of the ion implantation process.

[0009] Means for Solving the Problems

[0010] An ion implantation apparatus according to an embodiment of the present invention includes: a beam generation device configured to generate an ion beam irradiated onto an object to be processed and irradiate the ion beam within an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed of the object to be processed; a first holding device configured to be able to hold a first object to be processed and configured to reciprocate the first object to be processed held by the first holding device in a horizontal direction so as to cross the irradiation range; and a second holding device configured to be able to hold a second object to be processed and configured to reciprocate the second object to be processed held by the second holding device in a horizontal direction so as to cross the irradiation range.

[0011] Another embodiment of the present invention is an ion implantation method. The method includes the following steps: generating an ion beam irradiated onto a workpiece; irradiating the ion beam within an irradiation range whose size in the vertical direction is larger than the size of the processed surface of the workpiece; causing a first holding device to hold a first workpiece; using the first holding device to reciprocate the first workpiece in the horizontal direction in such a way that the first workpiece crosses the irradiation range; causing a second holding device to hold a second workpiece; and using the second holding device to reciprocate the second workpiece in the horizontal direction in such a way that the second workpiece crosses the irradiation range.

[0012] In addition, any combination of the above components, and the components or expressions of the present invention are mutually replaced between methods, devices, systems, etc., which are also effective as embodiments of the present invention.

[0013] Advantages of the Invention

[0014] According to a non-limiting exemplary embodiment of the present invention, a technique for improving the productivity of the ion implantation process can be provided. Description of the Drawings

[0015] Figure 1 is a top view showing a schematic structure of the ion implantation apparatus according to the embodiment.

[0016] Figure 2 is a side view showing a schematic structure of the ion implantation apparatus according to the embodiment.

[0017] Figure 3 is a front view showing a schematic structure of the first holding device and the second holding device.

[0018] Figure 4 (a) and (b) thereof are top views schematically showing the horizontal orientation of the first workpiece held by the first holding device.

[0019] Figure 5 (a) to (c) thereof are side views schematically showing the vertical orientation of the first workpiece held by the first holding device.

[0020] Figure 6 is a front view showing an example of the operation of the first holding device and the second holding device.

[0021] Figure 7 is a front view showing an example of the operation of the first holding device and the second holding device.

[0022] Figure 8 is a front view showing an example of the operation of the first holding device and the second holding device.

[0023] Figure 9It is a front view showing an example of the operations of the first holding device and the second holding device.

[0024] Figure 10 It is a flowchart showing the process of the ion implantation method according to the embodiment.

[0025] Figure 11 It is a flowchart showing the process of the ion implantation method according to the modification. Detailed Description of the Invention

[0026] Hereinafter, with reference to the accompanying drawings, a mode for implementing the ion implantation apparatus and the ion implantation method according to the present invention will be described in detail. In addition, the same reference numerals are assigned to the same components in the description of the drawings, and repeated descriptions are appropriately omitted. And the structures described below are examples and do not limit the scope of the present invention in any way.

[0027] Figure 1 It is a top view showing the schematic structure of the ion implantation apparatus 10 according to the embodiment. Figure 2 It is a side view showing the schematic structure of the ion implantation apparatus 10 according to the embodiment. The ion implantation apparatus 10 is configured to perform an ion implantation process on the surfaces of the objects to be processed W1 and W2. The objects to be processed W1 and W2 are, for example, substrates and, for example, semiconductor wafers. For the sake of convenience in description, in this specification, the object to be processed may sometimes be referred to as a "substrate" or a "wafer", but this is not intended to limit the object of the implantation process to a specific object. The object to be processed may also be a large substrate (e.g., a glass substrate or a resin substrate) for manufacturing a flat panel display (FPD).

[0028] The ion implantation apparatus 10 is configured to irradiate a dot-shaped ion beam over the entire surface to be processed of the objects to be processed W1 and W2 by reciprocally scanning the ion beam in a prescribed scanning direction and reciprocally moving the objects to be processed W1 and W2 in a direction intersecting the scanning direction. The ion implantation apparatus 10 includes a beam generation device 12, an implantation processing chamber 14, a transfer device 16, and a control device 18.

[0029] The beam generation device 12 is configured to generate an ion beam and transport the ion beam to the implantation processing chamber 14. The implantation processing chamber 14 houses workpieces W1, W2 to be subjected to implantation processing. Inside the implantation processing chamber 14, the ion beam provided by the beam generation device 12 is irradiated onto the workpieces W1, W2. The transfer device 16 is configured to transfer the workpieces W1, W2 before implantation processing into the implantation processing chamber 14 and transfer the workpieces W1, W2 after implantation processing out of the implantation processing chamber 14. The control device 18 is configured to control all operations of various devices constituting the ion implantation device 10. The ion implantation device 10 includes a vacuum evacuation system (not shown) for providing a desired vacuum environment to the beam generation device 12, the implantation processing chamber 14, and the transfer device 16.

[0030] The beam generation device 12 successively includes an ion source 20, an extraction section 22, a mass spectrometry section 24, a beam shaping section 26, a beam scanning section 28, a beam parallelization section 30, an acceleration / deceleration section 32, and an energy analysis section 34 starting from the upstream side of the beam line A. Here, the beam line A is a term used for convenience of explanation, and its meaning is the same as the ideal beam trajectory in design when the ion beam is not scanned by the beam scanning section 28. Moreover, the upstream of the beam line A refers to the side closer to the ion source 20, and the downstream of the beam line A refers to the side closer to the implantation processing chamber 14 (or the beam stopper 38).

[0031] The beam generation device 12 is configured such that the beam line A bends on the way. The traveling direction of the beam line A changes in the mass spectrometry section 24 and the energy analysis section 34. The beam line A is configured to extend in a horizontal plane orthogonal to the vertical direction. In this specification, for convenience of explanation, the traveling direction of the ion beam advancing along the beam line A is set as the z direction, the vertical direction is set as the y direction, and the direction orthogonal to the y direction and the z direction is set as the x direction. In particular, the traveling direction of the beam line A from the ion source 20 to the mass spectrometry section 24 is set as the z1 direction, and the direction orthogonal to the y direction and the z1 direction is set as the x1 direction. Moreover, the traveling direction of the beam line A from the mass spectrometry section 24 to the energy analysis section 34 is set as the z2 direction, and the direction orthogonal to the y direction and the z2 direction is set as the x2 direction. In addition, the traveling direction of the beam line A downstream of the energy analysis section 34 is set as the z3 direction, and the direction orthogonal to the y direction and the z3 direction is set as the x3 direction.

[0032] The ion source 20 is configured to generate ions that constitute an ion beam. The ion source 20 includes an arc chamber 20a. The arc chamber 20a has an internal space 20b for generating plasma. The arc chamber 20a has a box shape that is substantially rectangular parallelepiped and divides the internal space 20b. The arc chamber 20a has a front slit 20c for extracting ions from the plasma generated in the internal space 20b. The front slit 20c has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the front slit 20c in the horizontal direction is greater than the opening width of the front slit 20c in the vertical direction.

[0033] The ion source 20 includes a source magnet device 20d. The source magnet device 20d is configured to apply a magnetic field B1 in the horizontal direction (x1 direction) to the internal space 20b of the arc chamber 20a. The source magnet device 20d improves the generation efficiency of the plasma generated in the internal space 20b of the arc chamber 20a by applying the magnetic field B1. The direction in which the source magnet device 20d applies the magnetic field B1 corresponds to the length direction of the front slit 20c.

[0034] The extraction unit 22 is provided downstream of the ion source 20. The extraction unit 22 extracts ions from the ion source 20 to generate an ion beam. The extraction unit 22 is configured to extract ions from the plasma generated in the internal space 20b of the arc chamber 20a. The extraction unit 22 includes a first extraction electrode 22a and a second extraction electrode 22b. The first extraction electrode 22a is provided on the downstream side of the arc chamber 20a, and the second extraction electrode 22b is provided on the downstream side of the first extraction electrode 22a. A negative suppression voltage is applied to the first extraction electrode 22a. A ground voltage is applied to the second extraction electrode 22b. In addition, a positive extraction voltage is applied to the arc chamber 20a.

[0035] The first extraction electrode 22a has a first extraction opening 22c through which the ion beam passes. Similar to the front slit 20c, the first extraction opening 22c has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the first extraction opening 22c in the horizontal direction is greater than the opening width of the first extraction opening 22c in the vertical direction. The second extraction electrode 22b has a second extraction opening 22d through which the ion beam passes. Similar to the front slit 20c, the second extraction opening 22d has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the second extraction opening 22d in the horizontal direction is greater than the opening width of the second extraction opening 22d in the vertical direction.

[0036] The ion beam extracted by the extraction section 22 can be a strip beam that expands in the horizontal direction (x1 direction). By increasing the opening widths in the horizontal direction of the front slit 20c, the first extraction opening 22c, and the second extraction opening 22d, the size of the strip beam in the horizontal direction can be increased. As a result, it is easy to increase the beam current of the ion beam extracted from the ion source 20.

[0037] The mass spectrometry section 24 is provided downstream of the extraction section 22. The mass spectrometry section 24 is configured to select necessary ion species from the ion beam extracted by the extraction section 22 through mass spectrometry. The mass spectrometry section 24 includes a mass spectrometry magnet device 24a, a mass spectrometry slit 24b, and an injector Faraday cup 24c.

[0038] The mass spectrometry magnet device 24a applies a magnetic field B2 to the ion beam and deflects the ion beam along different paths according to the value of the mass-to-charge ratio M = m / q (m is the mass and q is the charge). The mass spectrometry magnet device 24a applies a magnetic field B2 in the vertical direction (-y direction) to deflect the ion beam in the horizontal direction (x1 direction). The intensity of the magnetic field B2 applied by the mass spectrometry magnet device 24a is adjusted so that ion species having a desired mass-to-charge ratio M pass through the mass spectrometry slit 24b. The ion beam passing through the mass spectrometry slit 24b is deflected by 90 degrees by the mass spectrometry magnet device 24a, for example.

[0039] The mass spectrometry slit 24b is provided downstream of the mass spectrometry magnet device 24a. The mass spectrometry slit 24b has a slit shape with a shorter opening width in the horizontal direction (x2 direction) and a longer opening width in the vertical direction (y direction). That is, the opening width of the mass spectrometry slit 24b in the vertical direction is greater than the opening width of the mass spectrometry slit 24b in the horizontal direction.

[0040] The mass spectrometry slit 24b can also be configured such that the opening width in the horizontal direction (i.e., the slit width) is variable in order to adjust the mass resolution. The mass spectrometry slit 24b can also be composed of two beam shields that can move in the slit width direction, and is configured to be able to adjust the slit width by changing the interval between the two beam shields. The mass spectrometry slit 24b can also be configured to be variable in slit width by switching to any one of a plurality of slits with different slit widths.

[0041] The injector Faraday cup 24c is provided downstream of the mass spectrometry slit 24b. The injector Faraday cup 24c measures the beam current of the mass-analyzed ion beam passing through the mass spectrometry slit 24b. By measuring the beam current while changing the magnetic field intensity of the mass spectrometry magnet device 24a, the injector Faraday cup 24c can measure the mass spectrometry spectrum of the ion beam. The measured mass spectrometry spectrum can be used for the calculation of the mass resolution of the mass spectrometry section 24.

[0042] The injector Faraday cup 24c is configured to be able to move in and out relative to the beam line A by the operation of the injector drive unit 24d. The injector drive unit 24d moves the injector Faraday cup 24c in a direction (for example, the x2 direction) orthogonal to the z2 direction in which the beam line A extends. As shown by the dashed line in Figure 1 , when the injector Faraday cup 24c is disposed on the beam line A, it blocks the ion beam toward the downstream side. On the other hand, as shown by the solid line in Figure 1 , when the injector Faraday cup 24c retracts from the beam line A, the blocking of the ion beam toward the downstream side is released.

[0043] A magnetic shield 23 may be provided between the extraction unit 22 and the mass spectrometry unit 24. The magnetic shield 23 is configured to suppress magnetic field interference between the magnetic field B1 applied to the ion source 20 and the magnetic field B2 applied to the mass spectrometry unit 24. The magnetic shield 23 is made of a magnetic material such as an electromagnetic steel plate. The magnetic shield 23 has a passage opening 23a through which the ion beam directed from the extraction unit 22 toward the mass spectrometry unit 24 passes. Similar to the front slit 20c, the passage opening 23a may also have a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the passage opening 23a in the horizontal direction may be greater than the opening width of the passage opening 23a in the vertical direction.

[0044] The beam shaping unit 26 is provided downstream of the mass spectrometry unit 24. The beam shaping unit 26 is configured to shape the ion beam that has passed through the mass spectrometry unit 24 into a desired cross-sectional shape and convergence / divergence angle. The beam shaping unit 26 includes a lens device that adjusts at least one of the cross-sectional shape and the convergence / divergence angle of the ion beam. The beam shaping unit 26 is configured, for example, to converge a strip-shaped ion beam that expands in the horizontal direction and shape it into a dot-shaped ion beam.

[0045] The beam shaping unit 26 includes a plurality of lens devices, for example, three lens devices 26a, 26b, and 26c. The three lens devices 26a to 26c are configured, for example, as electric field type three-stage quadrupole lenses (also referred to as triode Q lenses). By combining and using a plurality of lens devices, the beam shaping unit 26 can independently adjust the convergence or divergence of the ion beam in the horizontal direction (x2 direction) and the vertical direction (y direction). The beam shaping unit 26 may also include a magnetic field type lens device. The beam shaping unit 26 may also include a lens device that shapes the ion beam using both an electric field and a magnetic field.

[0046] The beam scanning unit 28 is provided downstream of the beam shaping unit 26. The beam scanning unit 28 is configured to reciprocally scan the ion beam in a specified scanning direction to generate a scanned beam SB. The beam scanning unit 28 can also be said to be a beam deflection device that deflects the ion beam shaped by the beam shaping unit 26 in a specified scanning direction. The beam scanning unit 28 is configured such that the scanning direction is a direction different from the horizontal direction, and for example, is configured such that the scanning direction is the vertical direction (y direction).

[0047] The beam scanning unit 28 includes a pair of scanning electrodes 28a and 28b opposed to each other in the vertical direction (y direction). The pair of scanning electrodes 28a and 28b are connected to a variable voltage power supply (not shown). By periodically changing the voltage applied between the pair of scanning electrodes 28a and 28b, the electric field generated between the pair of scanning electrodes 28a and 28b is changed, and the ion beam is deflected at various angles. As a result, the ion beam is scanned over the entire scanning range in the vertical direction (y direction). In Figure 2 FIG., the scanning direction and the scanning range of the ion beam are illustrated by an arrow Y, and a plurality of trajectories of the ion beam within the scanning range are shown by dashed lines. In addition, the beam scanning unit 28 may be a magnetic field type instead of an electric field type. The beam scanning unit 28 may include a magnet device for deflecting the ion beam.

[0048] The beam parallelization unit 30 is provided downstream of the beam scanning unit 28. The beam parallelization unit 30 is configured to make the traveling direction of the ion beam reciprocally scanned by the beam scanning unit 28 parallel to the direction of the beam line A. The beam parallelization unit 30 has a plurality of parallelization lens electrodes 30a and 30b having an arc shape with an ion beam passing slit provided at the central portion in the horizontal direction (x2 direction). The parallelization lens electrodes 30a and 30b are connected to a high voltage power supply (not shown), and an electric field generated by applying a voltage is made to act on the ion beam to parallelize the traveling direction of the ion beam. In addition, the beam parallelization unit 30 may be a magnetic field type instead of an electric field type. The beam parallelization unit 30 may include a magnet device for deflecting the ion beam.

[0049] The acceleration / deceleration unit 32 is provided downstream of the beam parallelization unit 30. The acceleration / deceleration unit 32 is configured to accelerate or decelerate the scanned beam parallelized by the beam parallelization unit 30. The acceleration / deceleration unit 32 is an electrostatic acceleration / deceleration device, and the ion beam is accelerated or decelerated by the potential difference between the first potential applied to the upstream side of the acceleration / deceleration unit 32 and the second potential applied to the downstream side of the acceleration / deceleration unit 32.

[0050] The energy analysis unit 34 is provided downstream of the acceleration / deceleration unit 32. The energy analysis unit 34 is configured to analyze the energy of the ion beam and allow ions having a desired energy to pass through to the implantation processing chamber 14. The energy analysis unit 34 is an angular energy filter (AEF) that deflects the ion beam in the horizontal direction and selects the desired energy based on the deflection angle θ. The deflection angle θ is, for example, 10 degrees or more and 20 degrees or less, and is about 15 degrees. The energy analysis unit 34 includes an AEF electrode pair 34a, 34b and an energy analysis slit 34c.

[0051] The AEF electrode pair 34a, 34b is disposed opposite to each other in a direction orthogonal to the scanning direction. The AEF electrode pair 34a, 34b is disposed opposite to each other in the horizontal direction (x2 direction or x3 direction). The AEF electrode pair 34a, 34b is connected to a high-voltage power supply (not shown), and an electric field is applied to the ion beam to deflect it. The AEF electrode pair 34a, 34b is a deflection device for deflecting the scanning beam in the horizontal direction. The energy analysis slit 34c is provided on the downstream side of the AEF electrode pair 34a, 34b.

[0052] The energy analysis slit 34c has a slit shape with a longer opening width in the vertical direction (y direction) and a shorter opening width in the horizontal direction (x3 direction). That is, the opening width of the energy analysis slit 34c in the vertical direction is greater than the opening width of the energy analysis slit 34c in the horizontal direction. The energy analysis slit 34c allows the ion beam having a desired energy value or energy range to pass through to the objects to be processed W1, W2 and shields other ion beams.

[0053] The energy analysis unit 34 may be a magnetic field type instead of an electric field type. The energy analysis unit 34 may include a magnet device for magnetic field deflection. The energy analysis unit 34 may also use both an electric field and a magnetic field, and may include an AEF electrode pair for electric field deflection and a magnet device for magnetic field deflection.

[0054] In this way, the beam generation device 12 supplies an ion beam to be irradiated onto the objects to be processed W1, W2 to the implantation processing chamber 14. The beam generation device 12 may also be referred to as a beam line device. The beam generation device 12 is configured to generate an ion beam for achieving desired implantation conditions by adjusting the operation parameters of various devices constituting the beam generation device 12.

[0055] The implantation processing chamber 14 includes a plasma shower device 36, a beam stopper 38, a first holding device 40, and a second holding device 42.

[0056] The plasma shower device 36 is located downstream of the energy analysis unit 34. The plasma shower device 36 supplies low-energy electrons to the ion beam and the surfaces (processed surfaces) of the workpieces W1, W2 according to the beam current of the ion beam, and suppresses charging caused by the accumulation of positive charges on the processed surfaces due to ion implantation. The plasma shower device 36 includes, for example, a shower tube 36a through which the ion beam passes and a plasma generation unit 36b that supplies electrons into the shower tube 36a. The shower tube 36a has a shape with a longer opening width in the vertical direction (y direction) and a shorter opening width in the horizontal direction (x3 direction).

[0057] The beam stopper 38 is provided at the very downstream of the beam line A, and is mounted, for example, on the side wall of the implantation processing chamber 14. When there are no workpieces W1, W2 on the beam line A, the ion beam is incident on the beam stopper 38. A plurality of tuning cups 38a, 38b, 38c, 38d are provided on the beam stopper 38. The plurality of tuning cups 38a to 38d are Faraday cups configured to measure the beam current of the ion beam incident on the beam stopper 38. The plurality of tuning cups 38a to 38d are arranged at intervals in the vertical direction (y direction), for example.

[0058] The first holding device 40 is configured to be able to hold the first workpiece W1 to be implanted. The first holding device 40 is configured to reciprocate the first workpiece W1 held by the first holding device 40 in a direction crossing the scanning beam. The first holding device 40 is configured to reciprocate the first workpiece W1 in the horizontal direction (x3 direction). The first holding device 40 can move along a guide rail 44 extending in the horizontal direction (x3 direction).

[0059] The first holding device 40 includes a first chuck mechanism 50, a first torsion mechanism 52, a first vertical angle adjustment mechanism 54, a first horizontal angle adjustment mechanism 56, and a first reciprocating mechanism 58.

[0060] The first chuck mechanism 50 is configured to hold the first workpiece W1 by contacting the back surface of the first workpiece W1. The first chuck mechanism 50 includes, for example, an electrostatic chuck for holding the first workpiece W1. The first chuck mechanism 50 may also include a temperature adjustment mechanism for cooling or heating the first workpiece W1. The first chuck mechanism 50 includes a first lifting mechanism for lifting the first workpiece W1 to move the first workpiece W1 away from the first chuck mechanism 50.

[0061] The first torsion mechanism 52 rotatably supports the first chuck mechanism 50. The first torsion mechanism 52 rotates the first chuck mechanism 50 about a rotation axis (also referred to as a torsion axis) extending along the normal direction of the processing surface of the first workpiece W1 held by the first chuck mechanism 50 to adjust the torsion angle φa1 of the first workpiece W1. The first torsion mechanism 52 adjusts, for example, the torsion angle φa1 between an alignment mark provided on the outer peripheral portion of the first workpiece W1 and a reference position. Here, the alignment mark of the first workpiece W1 refers to, for example, a groove (Notch) or an orientation flat provided on the outer peripheral portion of a wafer, and is a mark that serves as a reference for the angular position in the crystal axis direction and the circumferential direction of the wafer.

[0062] The first vertical angle adjustment mechanism 54 rotatably supports the first torsion mechanism 52. The first vertical angle adjustment mechanism 54 rotates the first torsion mechanism 52 about a rotation axis (also referred to as a transfer tilt axis) extending along the horizontal direction to adjust the orientation of the first workpiece W1 in the vertical direction. The orientation of the first workpiece W1 in the vertical direction can be defined by a vertical rotation angle φb1 about the rotation axis in the horizontal direction.

[0063] The first horizontal angle adjustment mechanism 56 rotatably supports the first vertical angle adjustment mechanism 54. The first horizontal angle adjustment mechanism 56 rotates the first vertical angle adjustment mechanism 54 about a rotation axis (also referred to as an injection tilt axis) extending along the vertical direction to adjust the direction of the first workpiece W1 in the horizontal direction. The direction of the first workpiece W1 in the horizontal direction can be defined by a horizontal rotation angle φc1 about the rotation axis in the vertical direction.

[0064] The first reciprocating mechanism 58 is configured to move the first horizontal angle adjustment mechanism 56 in the horizontal direction (x3 direction). The first reciprocating mechanism 58 moves the first horizontal angle adjustment mechanism 56 along the guide rail 44. The first reciprocating mechanism 58 includes, for example, a first ball screw 58a extending in the horizontal direction (x3 direction) along the guide rail 44. The first reciprocating mechanism 58 linearly moves the first horizontal angle adjustment mechanism 56 in the horizontal direction by rotating the first ball screw 58a.

[0065] The second holding device 42 is configured to be able to hold the second workpiece W2 to be subjected to the injection process. The second holding device 42 is configured to reciprocate the second workpiece W2 held by the second holding device 42 in a direction crossing the scanning beam. The second holding device 42 is configured to reciprocate the second workpiece W2 in the horizontal direction (x3 direction). The second holding device 42 can move along the guide rail 44 extending in the horizontal direction (x3 direction).

[0066] The second holding device 42 can be configured in the same manner as the first holding device 40. The second holding device 42 can move in the same direction as the first holding device 40. The second holding device 42 can move along the guide rail 44 shared with the first holding device 40. Additionally, the second holding device 42 can also be configured to move along a guide rail different from that of the first holding device 40. That is, the injection processing chamber 14 can be provided with a first guide rail for the movement of the first holding device 40 and a second guide rail for the movement of the second holding device 42. The second holding device 42 can move simultaneously with the first holding device 40. The second holding device 42 can also move independently of the first holding device 40.

[0067] The second holding device 42 includes a second chuck mechanism 60, a second torsion mechanism 62, a second vertical angle adjustment mechanism 64, a second horizontal angle adjustment mechanism 66, and a second reciprocating mechanism 68.

[0068] The second chuck mechanism 60 is configured to hold the second workpiece W2 by contacting the back surface of the second workpiece W2. The second chuck mechanism 60 includes, for example, an electrostatic chuck for holding the second workpiece W2. The second chuck mechanism 60 can also be provided with a temperature adjustment mechanism for cooling or heating the second workpiece W2. The second chuck mechanism 60 is provided with a second lifting mechanism for lifting the second workpiece W2 away from the second chuck mechanism 60.

[0069] The second torsion mechanism 62 rotatably supports the second chuck mechanism 60. The second torsion mechanism 62 rotates the second chuck mechanism 60 around a rotation axis (also referred to as a torsion axis) extending along the normal direction of the processing surface of the second workpiece W2 held by the second chuck mechanism 60 to adjust the torsion angle φa2 of the second workpiece W2. The second torsion mechanism 62 adjusts, for example, the torsion angle φa2 between the alignment mark provided on the outer peripheral portion of the second workpiece W2 and the reference position.

[0070] The second vertical angle adjustment mechanism 64 rotatably supports the second torsion mechanism 62. The second vertical angle adjustment mechanism 64 rotates the second torsion mechanism 62 around a rotation axis (also referred to as a transfer tilt axis) extending along the horizontal direction to adjust the direction of the second workpiece W2 in the vertical direction. The direction of the second workpiece W2 in the vertical direction can be defined by the vertical rotation angle φb2 around the rotation axis along the horizontal direction.

[0071] The second horizontal angle adjustment mechanism 66 rotatably supports the second vertical angle adjustment mechanism 64. The second horizontal angle adjustment mechanism 66 rotates the second vertical angle adjustment mechanism 64 about a rotation axis (also referred to as the injection tilt axis) extending in the vertical direction to adjust the orientation of the second object to be processed W2 in the horizontal direction. The orientation of the second object to be processed W2 in the horizontal direction can be defined by the horizontal rotation angle φc2 about the rotation axis in the vertical direction.

[0072] The second reciprocating mechanism 68 is configured to move the second horizontal angle adjustment mechanism 66 in the horizontal direction (x3 direction). The second reciprocating mechanism 68 moves the second horizontal angle adjustment mechanism 66 along the guide rail 44. The second reciprocating mechanism 68 includes, for example, a second ball screw 68a extending in the horizontal direction (x3 direction) along the guide rail 44, and the second horizontal angle adjustment mechanism 66 is linearly moved in the horizontal direction by rotating the second ball screw 68a.

[0073] The transfer device 16 includes a first transfer device 70 and a second transfer device 72. The first transfer device 70 and the second transfer device 72 are arranged away from the beam line A in the horizontal direction (x3 direction). In Figure 1 this example, the first transfer device 70 is arranged away from the beam line A in the -x3 direction, and the second transfer device 72 is arranged away from the beam line A in the +x3 direction. The first transfer device 70 and the second transfer device 72 are arranged such that, for example, the beam blocker 38 is located between the first transfer device 70 and the second transfer device 72.

[0074] The first transfer device 70 is configured to carry the first object to be processed W1 before the injection process into the injection process chamber 14 and carry the first object to be processed W1 after the injection process out of the injection process chamber 14. The first transfer device 70 carries the first object to be processed W1 onto the first holding device 40 and carries the first object to be processed W1 out of the first holding device 40. The first transfer device 70 includes, for example, a first transfer robot (not shown) for transferring the first object to be processed W1. The first transfer device 70 transfers the first object to be processed W1 through a first transfer port 74 provided on the side wall of the injection process chamber 14.

[0075] The second transfer device 72 is configured to carry the second object to be processed W2 before the injection process into the injection process chamber 14 and carry the second object to be processed W2 after the injection process out of the injection process chamber 14. The second transfer device 72 carries the second object to be processed W2 onto the second holding device 42 and carries the second object to be processed W2 out of the second holding device 42. The second transfer device 72 includes, for example, a second transfer robot (not shown) for transferring the second object to be processed W2. The second transfer device 72 transfers the second object to be processed W2 through a second transfer port 76 provided on the side wall of the injection process chamber 14.

[0076] The control device 18 controls all operations of the ion implantation device 10. The control device 18 is implemented in hardware by components represented by a computer's CPU and memory, and mechanical devices, and in software by a computer program or the like. Various functions provided by the control device 18 can be achieved through the cooperation of hardware and software.

[0077] The control device 18 includes a processor 18a such as a CPU (Central Processing Unit), and memories 18b such as a ROM (Read Only Memory) and a RAM (Random Access Memory). For example, the control device 18 controls all operations of the ion implantation device 10 according to a program by the processor 18a executing the program stored in the memory 18b. The processor 18a may also execute a program stored in an arbitrary storage device different from the memory 18b, a program obtained from an arbitrary storage medium through a reading device, or a program obtained via a network. The memory 18b storing the program may be a volatile memory such as a DRAM (Dynamic Random Access Memory), or a non-volatile memory such as an EEPROM (Electrically Erasable Programmable Read-Only Memory), a flash memory, a magnetoresistive memory, a variable resistive memory, or a ferroelectric memory. The non-volatile memory, a magnetic storage medium such as a magnetic tape and a magnetic disk, and an optical storage medium such as an optical disk are examples of non-transitory and tangible computer-readable storage media.

[0078] Various functions provided by the control device 18 can be achieved by a single device including the processor 18a and the memory 18b, or through the cooperation of multiple devices each including the processor 18a and the memory 18b.

[0079] Figure 3 FIG. 11 is a front view showing a schematic structure of the first holding device 40 and the second holding device 42, showing a structure as viewed from the beam traveling direction (z3 direction) in the implantation processing chamber 14. In Figure 3In this case, the first holding device 40 is disposed at the first transfer position 80, and the second holding device 42 is disposed at the second transfer position 82. The first transfer position 80 is a position for loading the first workpiece W1 onto the first holding device 40 or unloading it from the first holding device 40 through the first transfer port 74. The first transfer position 80 corresponds to the position of the first transfer port 74. The second transfer position 82 is a position for loading the second workpiece W2 onto the second holding device 42 or unloading it from the second holding device 42 through the second transfer port 76. The second transfer position 82 corresponds to the position of the second transfer port 76. The first transfer position 80 and the second transfer position 82 are spaced apart from the implantation position 84 for irradiating the workpieces W1, W2 with an ion beam in the horizontal direction (x3 direction).

[0080] The implantation position 84 is located at the central portion of the implantation processing chamber 14 in the horizontal direction (x3 direction). The implantation position 84 is located between the first transfer position 80 and the second transfer position 82. The implantation position 84 includes an implantation central position 84C, an implantation left end position 84L, and an implantation right end position 84R. In Figure 3 this case, the workpieces WC, WL, and WR located at the implantation central position 84C, the implantation left end position 84L, and the implantation right end position 84R, respectively, are shown by dashed double-dotted lines. The implantation central position 84C corresponds to the position irradiated by the scanning beam SB generated by the beam generation device 12. The implantation left end position 84L is a position deviated from the implantation central position 84C to the left side ( Figure 3 +x3 direction), and is set such that the entire processed surface of the workpiece WL disposed at the implantation left end position 84L does not overlap with the scanning beam SB. The implantation right end position 84R is a position deviated from the implantation central position 84C to the right side ( Figure 3 -x3 direction), and is set such that the entire processed surface of the workpiece WR disposed at the implantation right end position 84R does not overlap with the scanning beam SB.

[0081] The size h of the irradiation range of the scanning beam SB in the vertical direction (y direction) B is larger than the size h of the processed surfaces of the workpieces W1, W2 in the vertical direction (y direction). W The size h of the scanning beam SB in the vertical direction B is, for example, 1.1 times or more and 3 times or less, preferably 1.2 times or more and 2 times or less, the size h of the processed surfaces of the workpieces W1, W2 in the vertical direction. W

[0082] The first holding device 40 reciprocates in the horizontal direction (x3 direction) at the injection position 84, whereby the scanning beam SB is irradiated onto the entire surface to be processed of the first object to be processed W1. The first holding device 40 reciprocates within the movement range C from the injection left end position 84L to the injection right end position 84R, whereby the scanning beam SB is irradiated onto the entire surface to be processed of the first object to be processed W1. The first holding device 40 can carry in or out the first object to be processed W1 by moving to the first transfer position 80. The first holding device 40 can move between the injection position 84 and the first transfer position 80. The first holding device 40 can move throughout the first movable range E1 from the first transfer position 80 to the injection left end position 84L. The first holding device 40 cannot move to the second transfer position 82.

[0083] The second holding device 42 reciprocates in the horizontal direction (x3 direction) at the injection position 84, whereby the scanning beam SB is irradiated onto the entire surface to be processed of the second object to be processed W2. The second holding device 42 reciprocates within the movement range C from the injection left end position 84L to the injection right end position 84R, whereby the scanning beam SB is irradiated onto the entire surface to be processed of the second object to be processed W2. The second holding device 42 can carry in or out the second object to be processed W2 by moving to the second transfer position 82. The second holding device 42 can move between the injection position 84 and the second transfer position 82. The second holding device 42 can move throughout the second movable range E2 from the second transfer position 82 to the injection right end position 84R. The second holding device 42 cannot move to the first transfer position 80.

[0084] The first implantation position for irradiating the first object to be processed W1 held by the first holding device 40 with an ion beam is the same as the second implantation position for irradiating the second object to be processed W2 held by the second holding device 42 with an ion beam. That is, the first implantation position and the second implantation position coincide with a shared implantation position 84. Also, the first movement range in which the first holding device 40 reciprocates the first object to be processed W1 at the first implantation position is the same as the second movement range in which the second holding device 42 reciprocates the second object to be processed W2 at the second implantation position. That is, the first movement range and the second movement range coincide with a shared movement range C. When viewed from the beam traveling direction, the first movement range and the second movement range overlap. The position of the first object to be processed W1 held by the first holding device 40 in the vertical direction at the first implantation position is the same as the position of the second object to be processed W2 held by the second holding device 42 in the vertical direction at the second implantation position. The position of the first object to be processed W1 held by the first holding device 40 in the beam traveling direction at the first implantation position is the same as the position of the second object to be processed W2 held by the second holding device 42 in the beam traveling direction at the second implantation position. Therefore, the first holding device 40 and the second holding device 42 are configured to be able to reciprocate the first object to be processed W1 and the second object to be processed W2 relative to the scanning beam SB in the same manner. Accordingly, the first object to be processed W1 and the second object to be processed W2 are irradiated with the scanning beam SB in a shared implantation environment.

[0085] Figure 4 FIGS. (a) and (b) schematically show a top view of the orientation of the first object to be processed W1 held by the first holding device 40 in the horizontal direction. Figure 4 FIGS. (a) and (b) show the change in the orientation of the first object to be processed W1 in the horizontal direction caused by the first horizontal angle adjustment mechanism 56. Similarly, the same applies to the orientation of the second object to be processed W2 held by the second holding device 42 in the horizontal direction.

[0086] Figure 4 FIGS. (a) and (b) show the orientation of the first object to be processed W1 during the implantation process of irradiating the first object to be processed W1 with the scanning beam SB. Figure 4 FIG. (a) shows the case where the processed surface of the first object to be processed W1 is orthogonal to the traveling direction (z3 direction) of the scanning beam SB. Figure 4 FIG. (b) shows the case where the processed surface of the first object to be processed W1 intersects obliquely with the traveling direction (z3 direction) of the scanning beam SB. In Figure 4In (b), the processed surface of the first workpiece W1 has a horizontal inclination angle α1 with respect to the traveling direction (z3 direction) of the scanning beam SB. The horizontal inclination angle α1 represents the inclination of the incident direction of the scanning beam SB with respect to the normal of the processed surface of the first workpiece W1 in the horizontal direction. The first holding device 40 can adjust the horizontal rotation angle φc1 by driving the first horizontal angle adjustment mechanism 56, thereby adjusting the horizontal inclination angle α1 of the first workpiece W1. The first holding device 40 is configured to be able to adjust the horizontal inclination angle α1 within a range of, for example, ±30 degrees or ±60 degrees when injecting ions.

[0087] Figure 5 Figures (a) to (c) are side views schematically showing the orientation of the first workpiece W1 held by the first holding device 40 in the vertical direction. Figure 5 Figures (a) to (c) show the changes in the orientation of the first workpiece W1 in the vertical direction caused by the first vertical angle adjustment mechanism 54. Similarly, the same applies to the orientation of the second workpiece W2 held by the second holding device 42 in the horizontal direction.

[0088] Figure 5 Figure (a) shows an example of the orientation of the first workpiece W1 in the ion injection process of irradiating the first workpiece W1 with the scanning beam SB. In Figure 5 Figure (a), the first holding device 40 holds the first workpiece W1 such that the processed surface of the first workpiece W1 is orthogonal to the traveling direction (z3 direction) of the scanning beam SB. That is, the first holding device 40 holds the first workpiece W1 with the processed surface of the first workpiece W1 not along the horizontal direction. In Figure 5 the example of Figure (a), the first holding device 40 holds the first workpiece W1 with the processed surface of the first workpiece W1 along the vertical direction.

[0089] Figure 5 Figure (b) shows another example of the orientation of the first workpiece W1 in the ion injection process of irradiating the first workpiece W1 with the scanning beam SB. In Figure 5 Figure (b), the first holding device 40 holds the first workpiece W1 with the processed surface of the first workpiece W1 inclined with respect to the vertical direction. In Figure 5 Figure (b), the first holding device 40 holds the first workpiece W1 with the processed surface of the first workpiece W1 not along the horizontal direction. In Figure 5In (b), the processed surface of the first object to be processed W1 has a vertical inclination angle β1 with respect to the traveling direction (z3 direction) of the scanning beam SB. The vertical inclination angle β1 represents the inclination of the incident direction of the scanning beam SB with respect to the normal of the processed surface of the first object to be processed W1 in the vertical direction. The first holding device 40 can adjust the vertical rotation angle φb1 by driving the first vertical angle adjustment mechanism 54, thereby being able to adjust the vertical inclination angle β1. The first holding device 40 is configured to be able to adjust the vertical inclination angle β1 within a range of, for example, ±30 degrees or ±60 degrees when injecting ions.

[0090] Figure 5 (c) shows the orientation of the first object to be processed W1 in the transfer process of loading the first object to be processed W1 onto the first holding device 40 or unloading it from the first holding device 40. In Figure 5 (c), the first holding device 40 holds the first object to be processed W1 with the processed surface of the first object to be processed W1 facing in the horizontal direction. In Figure 5 (c), the first holding device 40 uses the first lifting mechanism 50a to lift the first object to be processed W1 away from the first chuck mechanism 50. Thereby, the arm of the first transfer robot for loading or unloading the first object to be processed W1 can be inserted into the gap 50b between the first chuck mechanism 50 and the first object to be processed W1. Additionally, it is not necessary for the arm of the first transfer robot to be inserted into the gap 50b between the first chuck mechanism 50 and the first object to be processed W1. The arm of the first transfer robot can also be configured to support the outer peripheral portion of the first object to be processed W1 instead of supporting the back surface of the first object to be processed W1. In this case, the gap 50b can be very small.

[0091] Figures 6 - 9 It is a front view showing an example of the operations of the first holding device 40 and the second holding device 42. Figure 6 It shows the situation of implementing the first injection process for the first object to be processed W1. In Figure 6 , the first holding device 40 is arranged at the injection position 84, and the second holding device 42 is arranged at the second transfer position 82. The first holding device 40 reciprocates in the horizontal direction as shown by the arrow X at the injection position 84 to perform the injection process on the first object to be processed W1. The second holding device 42 uses the second lifting mechanism 60a to lift the second object to be processed W2 at the second transfer position 82 to unload the second object to be processed W2 after the injection process through the second transfer port 76. The second holding device 42 uses the second lifting mechanism 60a to receive the second object to be processed W2 at the second transfer position 82 to load the second object to be processed W2 before the injection process through the second transfer port 76.

[0092] In Figure 6In this case, the first holding device 40 holds the first workpiece W1 in an orientation such that the scanning beam SB irradiates the processing surface of the first workpiece W1. For example, as shown in (a) of Figure 4 , the first holding device 40 holds the first workpiece W1 in an orientation with a horizontal tilt angle α1 of 0. For example, as shown in (a) of Figure 5 , the first holding device 40 holds the first workpiece W1 in an orientation with a vertical tilt angle β1 of 0. As shown in (b) of Figure 4 , the first holding device 40 may also hold the first workpiece W1 in an orientation with a horizontal tilt angle α1 that is not 0. As shown in (b) of Figure 5 , the first holding device 40 may also hold the first workpiece W1 in an orientation with a vertical tilt angle β1 that is not 0. The first holding device 40 may hold the first workpiece W1 in an orientation where neither the horizontal tilt angle α1 nor the vertical tilt angle β1 is 0.

[0093] In Figure 6 , the second holding device 42 holds the second workpiece W2 in an orientation that allows the second workpiece W2 to be loaded into or unloaded from the second processing chamber 76 through the second transfer port 76. Similar to (c) of Figure 5 , the second holding device 42 holds the second workpiece W2 with the processing surface of the second workpiece W2 along the horizontal direction. The second holding device 42 raises the second workpiece W2 using the second lifting mechanism 60a to form a gap 60b between the second chuck mechanism 60 and the second workpiece W2. The second transfer device 72 unloads the second workpiece W2 after the injection process by inserting the arm of the second transfer robot into the gap 60b between the second chuck mechanism 60 and the second workpiece W2. When the second workpiece W2 before the injection process is placed on the second lifting mechanism 60a by the arm of the second transfer robot, the second holding device 42 releases the lifting of the second workpiece W2 and holds the second workpiece W2 on the second chuck mechanism 60. After holding the second workpiece W2 before the injection process, the second holding device 42 drives the second vertical angle adjustment mechanism 64 to change the vertical rotation angle φb2 and holds the second workpiece W2 in an orientation where the processing surface of the second workpiece W2 is not along the horizontal direction.

[0094] Figure 7 shows the situation of switching from the first injection process for the first workpiece W1 to the second injection process for the second workpiece W2. That is, it shows the situation where the first injection process for the first workpiece W1 ends and the second injection process for the second workpiece W2 starts. In Figure 7In the figure, the first holding device 40 moves from the injection position 84 toward the first transfer position 80 as shown by the arrow F1, and the second holding device 42 moves from the second transfer position 82 toward the injection position 84 as shown by the arrow F2. As Figure 7 shown, by moving the first holding device 40 and the second holding device 42 simultaneously in the same direction, the time required for switching from the first injection process to the second injection process can be shortened.

[0095] In Figure 7 the figure, the first holding device 40 and the second holding device 42 can be moved in such a manner that the relative distance d between the first object to be processed W1 held by the first holding device 40 and the second object to be processed W2 held by the second holding device 42 is maintained. For example, by making the moving speeds of the first holding device 40 and the second holding device 42 the same, the relative distance d can be maintained constant. Alternatively, the moving speeds of the first holding device 40 and the second holding device 42 can be adjusted so that the first holding device 40 and the second holding device 42 are moved in such a manner that the relative distance d is maintained within a range from a specified upper limit value to a lower limit value. At this time, the moving speed of the first holding device 40 can be faster or slower than the moving speed of the second holding device 42. In the case of ion implantation in which a uniform dose distribution is achieved in the horizontal direction for the object to be processed, the relative distance d is preferably as small as possible. In the case of ion implantation in which a non-uniform dose distribution is achieved in the horizontal direction for the object to be processed, the relative distance d is preferably greater than the size of the scanning beam SB in the horizontal direction (x3 direction).

[0096] In Figure 7 the figure, the moving speed of the first holding device 40 that holds the first object to be processed W1 after the injection process is completed can be the maximum speed that the first holding device 40 can achieve. By moving the first holding device 40 at the maximum speed, the time required from the completion of the first injection process for the first object to be processed W1 to the removal of the first object to be processed W1 can be shortened, thereby improving productivity. On the other hand, the moving speed of the second holding device 42 that holds the second object to be processed W2 at the start of the injection process can be determined according to the injection conditions of the second object to be processed W2. By moving the second holding device 42 at a moving speed corresponding to the injection conditions, the second injection process for the second object to be processed W2 can be started at a constant moving speed after the second object to be processed W2 has moved to the injection position 84. As a result, the second injection process can be started earlier, and productivity can be improved.

[0097] Figure 8 shows the situation of implementing the second injection process for the second object to be processed W2. In Figure 8In this case, the second holding device 42 is disposed at the injection position 84, and the first holding device 40 is disposed at the first transfer position 80. The second holding device 42 reciprocates in the horizontal direction as indicated by the arrow X at the injection position 84 to perform an injection process on the second object to be processed W2. The first holding device 40 uses the first lifting mechanism 50a to lift the first object to be processed W1 at the first transfer position 80 to carry out the first object to be processed W1 after the injection process through the first transfer port 74. The first holding device 40 uses the first lifting mechanism 50a to receive the first object to be processed W1 at the first transfer position 80 to carry in the first object to be processed W1 before the injection process through the first transfer port 74.

[0098] In Figure 8 this case, the second holding device 42 holds the second object to be processed W2 in an orientation in which the scanning beam SB is irradiated onto the surface to be processed of the second object to be processed W2. For example, similar to Figure 4 (a) of this case, the second holding device 42 holds the second object to be processed W2 with the horizontal tilt angle α2 being 0. For example, similar to Figure 5 (a) of this case, the second holding device 42 holds the second object to be processed W2 with the vertical tilt angle β2 being 0. Similar to Figure 4 (b) of this case, the second holding device 42 may also hold the second object to be processed W2 with the horizontal tilt angle α2 not being 0. Similar to Figure 5 (b) of this case, the second holding device 42 may also hold the second object to be processed W2 with the vertical tilt angle β2 not being 0. The second holding device 42 may also hold the second object to be processed W2 with both the horizontal tilt angle α2 and the vertical tilt angle β2 not being 0.

[0099] In Figure 8 this case, the first holding device 40 holds the first object to be processed W1 in an orientation that enables the first object to be processed W1 to be carried in or out through the first transfer port 74. As shown in Figure 5As shown in (c) thereof, the first holding device 40 holds the first object to be processed W1 such that the surface to be processed of the first object to be processed W1 faces in the horizontal direction. The first holding device 40 uses the first lifting mechanism 50a to lift the first object to be processed W1, and a gap 50b is formed between the first chuck mechanism 50 and the first object to be processed W1. The first transfer device 70 removes the first object to be processed W1 after the injection process by inserting the arm of the first transfer robot into the gap 50b between the first chuck mechanism 50 and the first object to be processed W1. When the first object to be processed W1 before the injection process is placed on the first lifting mechanism 50a by the arm of the first transfer robot, the first holding device 40 releases the lifting of the first object to be processed W1 and holds the first object to be processed W1 on the first chuck mechanism 50. After holding the first object to be processed W1 before the injection process, the first holding device 40 drives the first vertical angle adjustment mechanism 54 to change the vertical rotation angle φb1, and holds the first object to be processed W1 such that the surface to be processed of the first object to be processed W1 does not face in the horizontal direction.

[0100] Figure 9 FIG. shows a situation where the second injection process for the second object to be processed W2 is switched to the first injection process for the first object to be processed W1. That is, it shows a situation where the second injection process for the second object to be processed W2 ends and the first injection process for the first object to be processed W1 starts. In Figure 9 this, the first holding device 40 moves from the first transfer position 80 toward the injection position 84 as shown by the arrow F3, and the second holding device 42 moves from the injection position 84 toward the second transfer position 82 as shown by the arrow F4. As Figure 9 shown, by moving the first holding device 40 and the second holding device 42 simultaneously in the same direction, the time required for switching from the second injection process to the first injection process can be shortened.

[0101] In Figure 9 this, the first holding device 40 and the second holding device 42 can be moved in such a manner that the relative distance d between the first object to be processed W1 held by the first holding device 40 and the second object to be processed W2 held by the second holding device 42 is maintained. For example, by making the moving speeds of the first holding device 40 and the second holding device 42 the same, the relative distance d can be maintained constant. Alternatively, the moving speeds of the first holding device 40 and the second holding device 42 can be adjusted so that the first holding device 40 and the second holding device 42 are moved in such a manner that the relative distance d is maintained within a range from a specified upper limit value to a lower limit value. At this time, the moving speed of the first holding device 40 can be made faster or slower than the moving speed of the second holding device 42. The relative distance d is preferably greater than the size of the scanning beam SB in the horizontal direction (x3 direction).

[0102] InFigure 9 In this case, the moving speed of the second holding device 42 that holds the second workpiece W2 at the end of the injection process can be the maximum speed achievable by the second holding device 42. By moving the second holding device 42 at the maximum speed, the time required from the completion of the second injection process for the second workpiece W2 to the unloading of the second workpiece W2 can be shortened, thereby improving productivity. On the other hand, the moving speed of the first holding device 40 that holds the first workpiece W1 at the start of the injection process can be determined according to the injection conditions of the first workpiece W1. By moving the first holding device 40 at a moving speed corresponding to the injection conditions, the first injection process for the first workpiece W1 can be started at a constant moving speed after the first workpiece W1 is moved to the injection position 84. As a result, the first injection process can be started earlier, improving productivity.

[0103] Figure 10 FIG. is a flowchart showing the process of the ion implantation method according to the embodiment. First, the first workpiece W1 before the implantation process is loaded onto the first holding device 40 (S10). In S10, after unloading the first workpiece W1 that has been held by the first holding device 40 and completed the implantation process, the first workpiece W1 before the implantation process may also be loaded onto the first holding device 40. Next, the second holding device 42 is moved to the second transfer position 82 (S12), and the first holding device 40 is moved to the first injection position (e.g., injection position 84) (S14). S12 and S14 can be executed simultaneously and can be executed in such a way that at least part of the execution periods of S12 and S14 overlap. Next, by reciprocating the first holding device 40 at the first injection position, an ion beam is irradiated onto the reciprocating first workpiece W1 (S16).

[0104] Before, during, or after executing S16, the second workpiece W2 before the implantation process is loaded onto the second holding device 42 (S18). In S18, after unloading the second workpiece W2 that has been held by the second holding device 42 and completed the implantation process, the second workpiece W2 before the implantation process may also be loaded onto the second holding device 42. Next, the first holding device 40 is moved to the first transfer position 80 (S20), and the second holding device 42 is moved to the second injection position (e.g., injection position 84) (S22). S20 and S22 can be executed simultaneously and can be executed in such a way that at least part of the execution periods of S20 and S22 overlap. Next, by reciprocating the second holding device 42 at the second injection position, an ion beam is irradiated onto the reciprocating second workpiece W2 (S24).

[0105] Figure 10The process shown can be executed repeatedly. For example, the process of S10 after repeated execution can be executed before the execution of S24, during the execution of S24, or after the execution of S24. Before the execution of S24, during the execution of S24, or after the execution of S24, the first workpiece W1 after the injection process held by the first holding device 40 can be carried out, and the first workpiece W1 before the injection process can be carried into the first holding device 40. By repeatedly executing Figure 10 the process shown, the first injection process for the first workpiece W1 held by the first holding device 40 and the second injection process for the second workpiece W2 held by the second holding device 42 can be alternately and repeatedly executed. Figure 10 The process shown can be repeatedly executed until the injection processes for a plurality of workpieces to be continuously processed are completed.

[0106] According to the present embodiment, by providing a plurality of holding devices in the injection processing chamber 14, the injection process and the transfer process of the workpiece can be executed in parallel. For example, while performing the first injection process for the first workpiece W1 held by the first holding device 40, the second holding device 42 can be used to execute the transfer process of the second workpiece W2. And, while performing the second injection process for the second workpiece W2 held by the second holding device 42, the first holding device 40 can be used to execute the transfer process of the first workpiece W1. As a result, compared with the case of alternately executing the injection process and the transfer process using one holding device, the time required for continuously processing a plurality of workpieces can be shortened, and the productivity can be improved.

[0107] According to the present embodiment, by adopting a structure in which a plurality of holding devices reciprocate in the horizontal direction, compared with a structure in which a plurality of holding devices reciprocate in the vertical direction, the structures of the injection processing chamber 14 and the transfer device 16 can be prevented from becoming complicated. And, by adopting a structure in which a plurality of holding devices reciprocate in the horizontal direction, the vertical dimensions of the injection processing chamber 14 and the transfer device 16 can be suppressed. As a result, an ion implantation device 10 can be provided, which has an outer dimension within the height limit range on the floor of a general semiconductor processing factory.

[0108] According to the present embodiment, by adopting a structure in which a plurality of holding devices move along a common guide rail 44, the reciprocating movements of the plurality of holding devices at the injection positions can be made common. As a result, it is possible to prevent differences in the injection environment by using a plurality of holding devices. As a result, while suppressing variations in the injection processes for a plurality of workpieces, the productivity of the injection processes for a plurality of workpieces can be improved.

[0109] According to the present embodiment, by reciprocally scanning the ion beam in the vertical direction and reciprocally moving the object to be processed in the horizontal direction, it is possible to efficiently irradiate the entire processed surface of the object to be processed with a scanning beam. Further, by deflecting the ion beam in the horizontal direction in the mass spectrometry unit 24 and the energy analysis unit 34, it is possible to form a beam line A traveling within the horizontal plane, thereby suppressing the size of the beam generation device 12 in the vertical direction.

[0110] According to the present embodiment, by making the front slit 20c of the ion source 20 have a slit shape that is longer in the horizontal direction, it is possible to generate an ion beam that expands in the horizontal direction through the extraction unit 22. As a result, compared to the case of extracting a point-like ion beam from the ion source 20, it is easier to generate an ion beam with a larger beam current. Further, since the size of the ion beam extracted from the ion source 20 in the vertical direction is small, it is possible to reduce the interval between the opposing magnetic poles of the mass spectrometry magnet device 24a through which the ion beam passes. As a result, the size of the mass spectrometry magnet device 24a can be suppressed. For example, compared to a comparative example in which the front slit of the ion source is set to a slit shape that is narrow in the horizontal direction and long in the vertical direction, it is possible to generate an ion beam with a larger beam current while suppressing the size of the mass spectrometry magnet device 24a.

[0111] According to the present embodiment, by shaping the ion beam that expands in the horizontal direction into a point shape using the beam shaping unit 26, it is possible to form a point beam suitable for beam scanning in the vertical direction by the beam scanning unit 28. By scanning the point beam in the vertical direction using the beam scanning unit 28, it is possible to perform ion implantation on an object to be processed that is large in size in the vertical direction. According to the present embodiment, since it is possible to irradiate a scanning beam with a larger beam current to an object to be processed that is large in size in the vertical direction, it is possible to improve the productivity of the implantation process.

[0112] In the present embodiment, the direction of application of the magnetic field B1 at the ion source 20 is orthogonal to the direction of application of the magnetic field B2 at the mass spectrometry unit 24, so the possibility of adverse effects on the beam quality and magnetic field control due to interference between the two increases. On the other hand, in the case of a comparative example in which the direction of application of the magnetic field at the ion source is the vertical direction, the direction of application of the magnetic field at the ion source is parallel to the direction of application of the magnetic field at the mass spectrometry unit, so even if there is some interference between the magnetic fields of the two, it will not be a major problem. According to the present embodiment, by providing a magnetic shield 23 between the extraction unit 22 and the mass spectrometry unit 24, it is possible to suppress magnetic field interference between the horizontal magnetic field B1 applied to the ion source 20 and the vertical magnetic field B2 applied to the mass spectrometry unit 24. Thereby, it is possible to balance the plasma generation efficiency at the ion source 20 and the mass spectrometry accuracy of the mass spectrometry unit 24.

[0113] This embodiment can be applied to ion implantation processing of a workpiece having a relatively large size in the vertical direction. An example of a workpiece having a relatively large size in the vertical direction is a large substrate for manufacturing a flat panel display (FPD). The size of such a large substrate in the vertical and horizontal directions is, for example, 1 m × 2 m or more. It is difficult to reciprocate such a large workpiece in the vertical direction. According to this embodiment, the workpiece is reciprocated in the horizontal direction. Therefore, compared with the case where the workpiece is reciprocated in the vertical direction, the reciprocation of the large substrate is easier. By irradiating a scanned beam that scans in the vertical direction on the large substrate that reciprocates in the horizontal direction, ion implantation processing can be performed on the large substrate.

[0114] In the case where the workpiece is a large substrate for an FPD, the ion implantation apparatus 10 may not include at least one of the beam parallelization unit 30, the acceleration / deceleration unit 32, and the energy analysis unit 34. In the case where the workpiece is a large substrate for an FPD, the injection processing chamber 14 may also move the workpiece in the horizontal direction to carry the workpiece into the injection processing chamber 14 and carry the workpiece out of the injection processing chamber 14. For example, a large substrate before injection processing can be carried into the injection processing chamber 14 from the right side (or left side) of the injection processing chamber 14, and the large substrate can be moved to the left (or right) in the injection processing chamber 14 to perform ion implantation processing, and the large substrate after injection processing can be carried out of the injection processing chamber 14 from the left side (or right side) of the injection processing chamber 14. Thus, the ion implantation apparatuses 10 can be arranged in a straight line to continuously process large substrates.

[0115] Figure 11 is a flowchart showing the process of the ion implantation method according to the modified example. In Figure 11 the process, the first implantation step for the first workpiece W1 and the second implantation step for the second workpiece W2 are performed in parallel.

[0116] First, the first workpiece W1 before injection processing is carried onto the first holding device 40 (S30). In S30, after the first workpiece W1 that has completed injection processing and is held by the first holding device 40 is carried out, the first workpiece W1 before injection processing can be carried onto the first holding device 40. And, the second workpiece W2 before injection processing is carried onto the second holding device 42 (S32). In S32, after the second workpiece W2 that has completed injection processing and is held by the second holding device 42 is carried out, the second workpiece W2 before injection processing can be carried onto the second holding device 42. The order of steps S30 and S32 is not limited. S32 can be started after S30 is started, or S30 can be started after S32 is started. Steps S30 and S32 can also be performed simultaneously.

[0117] Next, the first holding device 40 is moved to the first injection position (e.g., injection position 84) (S34). By reciprocating the first holding device 40 at the first injection position, an ion beam is irradiated onto the reciprocating first object to be processed W1 (S36). The number of reciprocations of the first object to be processed W1 in S36 is not particularly limited, and for example, it may be only one reciprocation. Thereafter, the first holding device 40 is retracted from the first injection position (S38), and the second holding device 42 is moved to the second injection position (e.g., injection position 84) (S40). The first retraction position where the first holding device 40 is retracted is, for example, located between the first transfer position 80 and the first injection position. The first retraction position where the first holding device 40 is retracted may also be the same as the first transfer position 80.

[0118] Next, by reciprocating the second holding device 42 at the second injection position, an ion beam is irradiated onto the reciprocating second object to be processed W2 (S42). The number of reciprocations of the second object to be processed W2 in S42 is not particularly limited, and for example, it may be only one reciprocation. Thereafter, the second holding device 42 is retracted from the second injection position (S44). The second retraction position where the second holding device 42 is retracted is, for example, located between the second transfer position 82 and the second injection position. The second retraction position where the second holding device 42 is retracted may also be the same as the second transfer position 82.

[0119] If the injection process for the first object to be processed W1 and the second object to be processed W2 is not completed ("No" in S46), the processes S34 to S44 are repeatedly executed until the injection process is completed. For example, if the number of reciprocations required to complete the injection process for the first object to be processed W1 and the second object to be processed W2 is three (i.e., three reciprocations), the processes S34 to S44 are repeatedly executed three times. At this time, the process of irradiating the ion beam while the first object to be processed W1 reciprocates once and the process of irradiating the ion beam while the second object to be processed W2 reciprocates once are each alternately executed three times. At this time, it is possible to minimize the relative distance d between the first object to be processed W1 and the second object to be processed W2 while simultaneously executing S38 and S40, and it is possible to minimize the relative distance d between the first object to be processed W1 and the second object to be processed W2 while simultaneously executing S44 and S34. That is, it is possible to maintain a state where the relative distance d between the first object to be processed W1 and the second object to be processed W2 is minimized and cause the first object to be processed W1 and the second object to be processed W2 to reciprocate synchronously in the same direction. Thereby, the utilization efficiency of the ion beam can be improved.

[0120] If the injection process is completed in S46 ("Yes" in S46), the first holding device 40 is moved to the first transfer position 80 (S48), and the second holding device 42 is moved to the second transfer position 82 (S50). The order of processes S48 and S50 is not limited. S50 can start after S48 starts, or S48 can start after S50 starts. Processes S48 and S50 can also be executed simultaneously. Also, when the first retraction position is the first transfer position 80, the first holding device 40 has been arranged at the first transfer position 80 in process S38, so process S48 can be omitted. Similarly, when the second retraction position is the second transfer position 82, the second holding device 42 has been arranged at the second transfer position 82 in process S44, so process S50 can be omitted.

[0121] Figure 11 The flow shown can be repeatedly executed until the injection processes for a plurality of objects to be continuously processed are completed. According to Figure 11 this flow, the first transfer process of loading and unloading the first object to be processed W1 using the first holding device 40 and the second transfer process of loading and unloading the second object to be processed W2 using the second holding device 42 can be executed simultaneously, so the productivity can be improved. Figure 11 The flow shown is preferably applicable to the case where the injection time of irradiating the object to be processed with an ion beam is sufficiently short (for example, less than half) compared to the transfer time required for loading and unloading the object to be processed. And, Figure 11 the flow shown is also preferably applicable to the case where the injection time of irradiating the object to be processed with an ion beam is sufficiently long (for example, twice or more) compared to the transfer time required for loading and unloading the object to be processed. Figure 11 The flow shown can also be applicable to the case where the injection time of irradiating the object to be processed with an ion beam is approximately the same as the transfer time required for loading and unloading the object to be processed. However, in this case, Figure 10 the productivity of the flow shown may be higher.

[0122] In the above embodiment, the case where the beam generation device 12 uses the beam scanning unit 28 and the beam parallelization unit 30 to generate a scanned beam is shown. In another embodiment, the beam generation device can also generate a ribbon beam. The beam generation device can be provided with a ribbon beam generation unit instead of the beam scanning unit 28. The ribbon beam generation unit generates a ribbon beam by diverging a dot-like ion beam in the vertical direction. The ribbon beam generation unit can be constituted by an electric field type or a magnetic field type beam divergence device.

[0123] In the above-described embodiment, a case where the ion beam extracted from the ion source 20 is a ribbon beam that expands in the horizontal direction is shown. In another embodiment, the ion beam extracted from the ion source may also be a ribbon beam that expands in the vertical direction. At this time, the front slit of the ion source has a slit shape with a longer opening width in the vertical direction and a shorter opening width in the horizontal direction. Similarly, the extraction electrode of the extraction unit has a slit shape with a longer opening width in the vertical direction and a shorter opening width in the horizontal direction. At this time, the mass spectrometry unit is configured to deflect the ribbon beam that expands in the vertical direction in the horizontal direction. At this time, the beam generation device may not include the beam scanning unit 28 and the beam parallelization unit 30. At this time, the ion source and the extraction unit can be said to be a ribbon beam generation unit for generating a ribbon beam that expands in the vertical direction.

[0124] In the above-described another embodiment, the size of the irradiation range of the ribbon beam that expands in the vertical direction in the vertical direction is larger than the size of the object to be processed in the vertical direction. Therefore, the beam generation device that generates the ribbon beam is configured to irradiate the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed of the object to be processed. Further, in the above-described embodiment, the beam generation device 12 that generates the scanning beam is configured to irradiate the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed of the object to be processed.

[0125] In the above-described embodiment, a case where a plurality of holding devices 40 and 42 are provided in the implantation processing chamber 14 is shown. In another embodiment, only one holding device may be provided in the implantation processing chamber 14. One holding device may be configured in the same manner as either the first holding device 40 or the second holding device 42 described above.

[0126] In the above-described embodiment, a case where the scanning direction of the scanning beam SB is the vertical direction is shown. In another embodiment, it may be configured such that the scanning direction of the scanning beam SB is inclined with respect to the vertical direction. At this time, the beam scanning unit 28, the beam parallelization unit 30, the acceleration / deceleration unit 32, and the energy analysis unit 34 are arranged (for example, at a position downstream of the mass spectrometry unit 24 and upstream of the beam scanning unit 28) at a position rotated about the beam line A extending along the z2 direction (that is, arranged in an inclined orientation). Further, it is also possible to rotate only the beam scanning unit 28 and the beam parallelization unit 30 and make at least one of the acceleration / deceleration unit 32 and the energy analysis unit 34 a non-rotating configuration. At this time, the scanning direction of the scanning beam SB is preferably within 45 degrees with respect to the vertical direction.

[0127] In the above-described embodiment, the case where the first holding device 40 and the second holding device 42 move in the horizontal direction is shown. In another embodiment, the moving directions of the first holding device 40 and the second holding device 42 may not be the horizontal direction and may be inclined with respect to the horizontal direction. The moving directions of the first holding device 40 and the second holding device 42 may be any direction that crosses the scanning beam and is different from the horizontal direction.

[0128] One aspect of the present invention is as follows.

[0129] (Item 1) An ion implantation device, comprising:

[0130] An ion source that generates ions;

[0131] An extraction unit that extracts the ions from the ion source to generate an ion beam;

[0132] A beam scanning unit configured to reciprocally scan the ion beam in a scanning direction different from the horizontal direction to generate a scanning beam; and

[0133] A holding device configured to be able to hold a workpiece and configured to reciprocally move the workpiece held by the holding device in a direction crossing the scanning beam.

[0134] (Item 2) The ion implantation device according to Item 1, wherein the holding device is configured to reciprocally move the workpiece held by the holding device in the horizontal direction.

[0135] (Item 3) The ion implantation device according to Item 1 or Item 2, wherein the scanning direction is a direction within 45 degrees with respect to the vertical direction.

[0136] (Item 4) The ion implantation device according to Item 1 or Item 2, wherein the scanning direction is the vertical direction.

[0137] (Item 5) The ion implantation device according to any one of Items 1 to 4, wherein the ion source includes a front slit through which the ions extracted by the extraction unit pass,

[0138] The opening width of the front slit in the horizontal direction is larger than the opening width of the front slit in the vertical direction.

[0139] (Item 6) The ion implantation device according to Item 5, wherein the ion source includes:

[0140] An arc chamber having an internal space and having the front slit for extracting the ions from the plasma generated in the internal space; and

[0141] A magnet device that applies a magnetic field in the horizontal direction to the internal space.

[0142] (Item 7) The ion implantation device according to Item 5 or Item 6, wherein the extraction unit includes an extraction electrode having an extraction opening through which the ion beam passes.

[0143] The opening width of the extraction opening in the horizontal direction is greater than the opening width of the extraction opening in the vertical direction.

[0144] (Item 8) The ion implantation device according to any one of Items 1 to 7, further comprising: a mass spectrometry unit disposed between the extraction unit and the beam scanning unit to deflect the ion beam in the horizontal direction.

[0145] (Item 9) The ion implantation device according to Item 8, wherein the mass spectrometry unit includes a magnet device that applies a magnetic field in the vertical direction to the ion beam.

[0146] (Item 10) The ion implantation device according to Item 8 or Item 9, further comprising: a magnetic shield disposed between the extraction unit and the mass spectrometry unit and having a passage opening through which the ion beam passes.

[0147] (Item 11) The ion implantation device according to any one of Items 8 to 10, further comprising: a beam shaping unit disposed between the mass spectrometry unit and the beam scanning unit and including at least one lens device for adjusting at least one of the cross-sectional shape and the convergence / divergence angle of the ion beam.

[0148] (Item 12) The ion implantation device according to any one of Items 1 to 11, further comprising: a beam parallelization unit disposed downstream of the beam scanning unit to parallelize the scanned beam.

[0149] (Item 13) The ion implantation device according to any one of Items 1 to 12, further comprising: an energy analysis unit including a deflection device that deflects the scanned beam in the horizontal direction and an energy analysis slit disposed downstream of the deflection device.

[0150] (Item 14) The ion implantation device according to Item 13, wherein the deflection device includes a pair of electrodes opposed across the scanned beam and a power supply that applies a DC voltage to the pair of electrodes.

[0151] (Item 15) The ion implantation device according to Item 14, wherein the pair of electrodes of the deflection device are opposed and arranged in the horizontal direction.

[0152] (Item 16) The ion implantation device according to Item 14, wherein the pair of electrodes of the deflection device are arranged opposite to each other in a direction orthogonal to the scanning direction.

[0153] (Item 17) An ion implantation method, comprising the following steps:

[0154] Generating ions using an ion source;

[0155] Extracting the ions from the ion source to generate an ion beam;

[0156] Scanning the ion beam reciprocally in a scanning direction different from the horizontal direction to generate a scanned beam; and

[0157] Moving the object to be processed reciprocally in a direction crossing the scanned beam.

[0158] One aspect of the present invention is as follows.

[0159] (Item 18) An ion implantation device, comprising:

[0160] A beam generation device configured to generate an ion beam irradiated on an object to be processed, and irradiate the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the processed surface of the object to be processed;

[0161] A first holding device configured to be able to hold a first object to be processed, and configured to move the first object to be processed reciprocally in the horizontal direction so that the first object to be processed held by the first holding device crosses the irradiation range; and

[0162] A second holding device configured to be able to hold a second object to be processed, and configured to move the second object to be processed reciprocally in the horizontal direction so that the second object to be processed held by the second holding device crosses the irradiation range.

[0163] (Item 19) The ion implantation device according to Item 18, wherein the first holding device is configured to be movable between a first implantation position for irradiating the first object to be processed with the ion beam and a first transfer position for loading or unloading the first object to be processed onto or from the first holding device,

[0164] The second holding device is configured to be movable between a second implantation position for irradiating the second object to be processed with the ion beam and a second transfer position for loading or unloading the second object to be processed onto or from the second holding device.

[0165] (Item 20) The ion implantation apparatus according to Item 19, wherein the first implantation position and the second implantation position are located between the first transfer position and the second transfer position.

[0166] (Item 21) The ion implantation apparatus according to Item 19 or Item 20, wherein when viewed from the beam traveling direction, the first movement range in which the first holding device reciprocates the first object to be processed at the first implantation position overlaps with the second movement range in which the second holding device reciprocates the second object to be processed at the second implantation position.

[0167] (Item 22) The ion implantation apparatus according to Item 21, wherein the first movement range is the same as the second movement range.

[0168] (Item 23) The ion implantation apparatus according to any one of Items 19 to 22, wherein the position of the first object to be processed held by the first holding device at the first implantation position in the vertical direction is the same as the position of the second object to be processed held by the second holding device at the second implantation position in the vertical direction.

[0169] (Item 24) The ion implantation apparatus according to any one of Items 19 to 23, wherein the position of the first object to be processed held by the first holding device at the first implantation position in the beam traveling direction is the same as the position of the second object to be processed held by the second holding device at the second implantation position in the beam traveling direction.

[0170] (Item 25) The ion implantation apparatus according to any one of Items 19 to 24, wherein the first holding device is configured not to be movable to the second transfer position,

[0171] The second holding device is configured not to be movable to the first transfer position.

[0172] (Item 26) The ion implantation apparatus according to any one of Items 18 to 25, wherein the first holding device and the second holding device are capable of moving in the same direction.

[0173] (Item 27) The ion implantation apparatus according to any one of Items 18 to 26, wherein the first holding device and the second holding device are capable of simultaneously moving in the same direction while maintaining the relative distance between the first object to be processed held by the first holding device and the second object to be processed held by the second holding device unchanged.

[0174] (Item 28) The ion implantation apparatus according to any one of Items 18 to 27, wherein the first holding device and the second holding device are capable of moving along a common guide rail.

[0175] (Item 29) The ion implantation device according to any one of Items 18 to 28, wherein the first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first object to be processed in the vertical direction and a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed in the horizontal direction.

[0176] The second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed in the vertical direction and a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed in the horizontal direction.

[0177] (Item 30) The ion implantation device according to any one of Items 18 to 28, wherein the first holding device includes a first vertical angle adjustment mechanism that rotates around a horizontal direction rotation axis to adjust the orientation of the first object to be processed and a first horizontal angle adjustment mechanism that rotates around a vertical direction rotation axis to adjust the orientation of the first object to be processed.

[0178] The second holding device includes a second vertical angle adjustment mechanism that rotates around a horizontal direction rotation axis to adjust the orientation of the second object to be processed and a second horizontal angle adjustment mechanism that rotates around a vertical direction rotation axis to adjust the orientation of the second object to be processed.

[0179] (Item 31) The ion implantation device according to any one of Items 18 to 28, wherein the first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first object to be processed. The first vertical angle adjustment mechanism is configured to adjust to an orientation in which the surface to be processed of the first object to be processed is along the horizontal direction when loading or unloading the first object to be processed, and to adjust to an orientation in which the surface to be processed of the first object to be processed is not along the horizontal direction when irradiating the first object to be processed with the ion beam.

[0180] The second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed. The second vertical angle adjustment mechanism is configured to adjust to an orientation in which the surface to be processed of the second object to be processed is along the horizontal direction when loading or unloading the second object to be processed, and to adjust to an orientation in which the surface to be processed of the second object to be processed is not along the horizontal direction when irradiating the second object to be processed with the ion beam.

[0181] (Item 32) The ion implantation device according to any one of Items 18 to 31, wherein the first holding device includes a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed in the horizontal direction and a first torsion mechanism for adjusting the torsion angle of the first object to be processed.

[0182] The second holding device includes a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed in the horizontal direction and a second torsion mechanism for adjusting the torsion angle of the second object to be processed.

[0183] (Item 33) The ion implantation device according to any one of Items 18 to 32, wherein the beam generation device includes a beam scanning unit that reciprocally scans the ion beam throughout the irradiation range.

[0184] (Item 34) The ion implantation device according to any one of Items 18 to 32, wherein the beam generation device includes a strip beam generation unit that generates a strip beam having a beam size corresponding to the size of the irradiation range.

[0185] (Item 35) An ion implantation method, which includes the following steps:

[0186] Generating an ion beam irradiated on the object to be processed;

[0187] Irradiating the ion beam throughout the irradiation range where the size in the vertical direction is larger than the size of the surface to be processed of the object to be processed;

[0188] Causing a first holding device to hold a first object to be processed;

[0189] Using the first holding device to reciprocally move the first object to be processed in the horizontal direction in such a manner that the first object to be processed crosses the irradiation range;

[0190] Causing a second holding device to hold a second object to be processed; and

[0191] Using the second holding device to reciprocally move the second object to be processed in the horizontal direction in such a manner that the second object to be processed crosses the irradiation range.

[0192] As described above, the present invention has been described with reference to the above-described embodiments, but the present invention is not limited to the above-described embodiments, and the structures of the embodiments can be appropriately combined, or the structures of the embodiments can be replaced. Also, the combinations or the order of processes in the embodiments can be appropriately reorganized according to the knowledge of those skilled in the art, or various design changes or the like can be applied to the embodiments. The embodiments to which such reorganization or deformation has been applied can also be included within the scope of the ion implantation device and the ion implantation method according to the present invention.

[0193] Embodiments of the present invention can be in the form of a computer program including one or more sequences readable by a computer that describe the methods involved in the present invention, or in the form of a non-temporary and tangible storage medium (e.g., non-volatile memory, magnetic tape, magnetic disk, or optical disk) storing such a computer program. A processor can implement the methods involved in the present invention by executing such a computer program.

[0194] Industrial Applicability

[0195] According to non-limiting exemplary embodiments of the present invention, a technique for improving the productivity of an ion implantation process can be provided.

[0196] Reference Signs

[0197] 10 - Ion implantation apparatus, 12 - Beam generation device, 14 - Implantation processing chamber, 16 - Transfer device, 18 - Control device, 20 - Ion source, 20a - Arc chamber, 20b - Internal space, 20c - Front slit, 22 - Extraction section, 22a - First extraction electrode, 22b - Second extraction electrode, 22c - First extraction opening, 22d - Second extraction opening, 23 - Magnetic shield, 24 - Mass spectrometry section, 24a - Mass spectrometry magnet device, 24b - Mass spectrometry slit, 26 - Beam shaping section, 26a - Lens device, 28 - Beam scanning section, 28a, 28b - Scanning electrode pair, 30 - Beam parallelization section, 30a, 30b - Parallelization lens electrode, 34 - Energy analysis section, 34a, 34b - AEF electrode pair, 34c - Energy analysis slit, 40 - First holding device, 42 - Second holding device, 44 - Guide rail, 50 - First chuck mechanism, 50a - First lifting mechanism, 52 - First torsion mechanism, 54 - First vertical angle adjustment mechanism, 56 - First horizontal angle adjustment mechanism, 58 - First reciprocating mechanism, 60 - Second chuck mechanism, 60a - Second lifting mechanism, 62 - Second torsion mechanism, 64 - Second vertical angle adjustment mechanism, 66 - Second horizontal angle adjustment mechanism, 68 - Second reciprocating mechanism, 70 - First transfer device, 72 - Second transfer device, 74 - First transfer port, 76 - Second transfer port, 80 - First transfer position, 82 - Second transfer position, 84 - Implantation position, A - Beam line, SB - Scanning beam, W1 - First workpiece, W2 - Second workpiece, C - Movement range, E1 - First movable range, E2 - Second movable range.

Claims

1. An ion implantation device, comprising: a beam generation device configured to generate an ion beam irradiated onto a workpiece, and irradiate the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the processed surface of the workpiece; a first holding device configured to be able to hold a first workpiece, and configured to reciprocate the first workpiece in the horizontal direction such that the first workpiece held by the first holding device crosses the irradiation range; and a second holding device configured to be able to hold a second workpiece, and configured to reciprocate the second workpiece in the horizontal direction such that the second workpiece held by the second holding device crosses the irradiation range.

2. The ion implantation device according to claim 1, wherein: the first holding device is configured to be movable between a first implantation position for irradiating the first workpiece with the ion beam and a first transfer position for loading the first workpiece onto the first holding device or unloading the first workpiece from the first holding device; the second holding device is configured to be movable between a second implantation position for irradiating the second workpiece with the ion beam and a second transfer position for loading the second workpiece onto the second holding device or unloading the second workpiece from the second holding device.

3. The ion implantation device according to claim 2, wherein: the first implantation position and the second implantation position are located between the first transfer position and the second transfer position.

4. The ion implantation device according to claim 2 or 3, wherein: when viewed from the beam traveling direction, a first movement range in which the first holding device reciprocates the first workpiece at the first implantation position overlaps with a second movement range in which the second holding device reciprocates the second workpiece at the second implantation position.

5. The ion implantation device according to claim 4, wherein: the first movement range and the second movement range are common.

6. The ion implantation device according to claim 2, wherein: the position of the first workpiece held by the first holding device in the vertical direction at the first implantation position is the same as the position of the second workpiece held by the second holding device in the vertical direction at the second implantation position.

7. The ion implantation device according to claim 2, wherein: the position of the first workpiece held by the first holding device in the beam traveling direction at the first implantation position is the same as the position of the second workpiece held by the second holding device in the beam traveling direction at the second implantation position.

8. The ion implantation device according to claim 2, wherein: the first holding device is configured not to be movable to the second transfer position; the second holding device is configured not to be movable to the first transfer position.

9. The ion implantation device according to claim 1, wherein: the first holding device and the second holding device can move in the same direction.

10. The ion implantation device according to claim 1, wherein, the first holding device and the second holding device are capable of simultaneously moving in the same direction while maintaining the relative distance between the first object to be processed held by the first holding device and the second object to be processed held by the second holding device unchanged.

11. The ion implantation device according to claim 1, wherein, the first holding device and the second holding device are capable of moving along a common guide rail.

12. The ion implantation device according to claim 1, wherein, the first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first object to be processed in the vertical direction and a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed in the horizontal direction, the second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed in the vertical direction and a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed in the horizontal direction.

13. The ion implantation device according to claim 1, wherein, the first holding device includes a first vertical angle adjustment mechanism that rotates around a horizontal direction rotation axis to adjust the orientation of the first object to be processed and a first horizontal angle adjustment mechanism that rotates around a vertical direction rotation axis to adjust the orientation of the first object to be processed, the second holding device includes a second vertical angle adjustment mechanism that rotates around a horizontal direction rotation axis to adjust the orientation of the second object to be processed and a second horizontal angle adjustment mechanism that rotates around a vertical direction rotation axis to adjust the orientation of the second object to be processed.

14. The ion implantation device according to claim 1, wherein, the first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first object to be processed. The first vertical angle adjustment mechanism is configured to adjust to an orientation in which the surface to be processed of the first object to be processed is along the horizontal direction when loading or unloading the first object to be processed, and to adjust to an orientation in which the surface to be processed of the first object to be processed is not along the horizontal direction when irradiating the first object to be processed with the ion beam, the second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed. The second vertical angle adjustment mechanism is configured to adjust to an orientation in which the surface to be processed of the second object to be processed is along the horizontal direction when loading or unloading the second object to be processed, and to adjust to an orientation in which the surface to be processed of the second object to be processed is not along the horizontal direction when irradiating the second object to be processed with the ion beam.

15. The ion implantation device according to claim 1, wherein, the first holding device includes a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed in the horizontal direction and a first torsion mechanism for adjusting the torsion angle of the first object to be processed, the second holding device includes a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed in the horizontal direction and a second torsion mechanism for adjusting the torsion angle of the second object to be processed.

16. The ion implantation apparatus according to claim 1, wherein the beam generation device includes a beam scanning unit that reciprocally scans the ion beam over the irradiation range.

17. The ion implantation apparatus according to claim 1, wherein the beam generation device includes a strip beam generation unit that generates a strip beam having a beam size corresponding to the size of the irradiation range.

18. An ion implantation method, comprising the steps of: generating an ion beam to be irradiated onto a workpiece; irradiating the ion beam over an irradiation range in the vertical direction, wherein the size of the irradiation range is larger than the size of the workpiece surface to be processed; holding a first workpiece with a first holding device; using the first holding device to reciprocally move the first workpiece in the horizontal direction so that the first workpiece crosses the irradiation range; holding a second workpiece with a second holding device; and using the second holding device to reciprocally move the second workpiece in the horizontal direction so that the second workpiece crosses the irradiation range.

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