Precise regeneration method for LAM ceramic part of chip manufacturing etching machine

Abstract

The invention relates to the technical field of precision regeneration methods of quartz parts, in particular to a precision regeneration method of LAM ceramic parts of a chip manufacturing etching machine, which comprises the following steps: detecting the appearance of an instrument, an output cable and a cleaning head protection lens, starting the instrument, setting language and a cleaning mode, placing the quartz part at a position close to a cleaning head on a rotary table, and starting the instrument; the cleaning head is aligned with a quartz component area; a thermal effect; a mechanical shock effect; sound wave vibration effect; a photochemical effect; plasma effect; closing the instrument after cleaning, taking away the parts after the parts are cooled, and shutting down; through cooperation of cleaning effects, the adaptive laser wavelength can be accurately selected according to the chemical structure and physical characteristics of pollutants and the attachment condition of the pollutants and the quartz part, the potential influence of the cleaning process on the quartz part is greatly reduced, it is ensured that the integrity and performance of the quartz part are not damaged, and meanwhile, the cleaning effect is improved. And the laser beam can be shaped into a shape most suitable for a cleaning task.

Description

Technical Field

[0001] The present invention relates to the technical field of precision regeneration methods for quartz components, and particularly to a precision regeneration method for LAM ceramic components of chip manufacturing etching machines. Background Art

[0002] With the rapid development of technology, the requirements for chip performance in electronic devices have increased exponentially. To meet the needs of higher computing speeds, lower power consumption, and smaller sizes, chip manufacturing processes are continuously moving towards smaller process nodes. As a key step in chip manufacturing for defining circuit patterns and removing excess materials, the accuracy and efficiency of etching directly determine the performance and production efficiency of chips. As an important part of the etching machine, the performance of quartz components directly affects the operating stability and production efficiency of the etching machine, and thus affects the overall production capacity of chip manufacturing. Therefore, it is necessary to continuously optimize and upgrade to adapt to higher-precision etching requirements with the development of the process technology.

[0003] Existing regeneration methods generally use potassium hydroxide solution to soak quartz components. After soaking, the components are taken out of the solution to check whether the surface attachments are completely removed. If removed, they are rinsed with pure water; if not, the soaking action is repeated until the attachments are completely removed. Moreover, the soaking solution is not only potassium hydroxide solution, but also often involves various strong acid solutions, which are highly corrosive, easily cause micro-corrosion on the surface of the components, resulting in a short service life of the components, high subsequent processing costs, and posing risks to operators.

[0004] Therefore, in view of the problems that the above soaking solutions are mostly strong acid solutions, highly corrosive, easily cause micro-corrosion on the surface of the components, resulting in a short service life of the components, high subsequent processing costs, and posing risks to operators, a precision regeneration method for LAM ceramic components of chip manufacturing etching machines can be designed. Summary of the Invention

[0005] In order to overcome the problems that the soaking solutions are mostly strong acid solutions, highly corrosive, easily cause micro-corrosion on the surface of the components, resulting in a short service life of the components, high subsequent processing costs, and posing risks to operators.

[0006] The technical solution of the present invention is: a precision regeneration method for LAM ceramic components of chip manufacturing etching machines, comprising the following steps:

[0007] S1: Detect the appearance of the instrument, output cables, and cleaning head protection lens. Turn on the instrument, set the language and cleaning mode, place the quartz component on the turntable near the cleaning head position, and align the cleaning head with the quartz component area;

[0008] S2: Thermal effect: When the laser irradiates the surface of the quartz component, the surface material absorbs the laser energy and the temperature rises rapidly. The pollutants expand due to heat, generating thermal stress. When the thermal stress exceeds the adhesion between the pollutants and the quartz component, the pollutants will detach from the surface of the quartz component.

[0009] S3: Mechanical shock effect: The laser pulse concentrates the energy on the pollutants in an extremely short time, causing the pollutants to evaporate rapidly or generate high-pressure gas. The shock wave formed by this high-pressure gas can mechanically strip the pollutants.

[0010] S4: Acoustic wave vibration effect: The high temperature generated by the laser on the material surface causes the material to expand and generate acoustic waves. The acoustic waves propagate inside the material and separate the pollutants from the quartz component.

[0011] S5: Photochemical effect: The pollutants undergo a photochemical reaction under the irradiation of a laser with a certain wavelength, generating volatile substances to achieve cleaning.

[0012] S6: Plasma effect: The high energy density of the laser instantaneously vaporizes the surface material to form a plasma. The shock wave generated by the expansion of the plasma removes the pollutants.

[0013] S7: After the cleaning is completed, turn off the instrument. After the component cools down, remove the component and then turn off the machine.

[0014] Preferably, the distance between the cleaning head and the component is 160 mm.

[0015] Preferably, the laser wavelength is 500 nm - 1100 nm and the laser power is 80 kW.

[0016] Preferably, after the surface material absorbs the laser energy, the temperature rises to 1500 °C - 2000 °C.

[0017] Preferably, the pulse frequency is 20 KHZ - 50 KHZ, the pulse width is 10 - 50 ns, and the energy density is 1 - 3 J / cm 2 , and the scanning speed is 20 m / s - 50 m / s.

[0018] Preferably, the laser energy density of the plasma effect is 2 - 5 J / cm 2 , the power is 10 - 50 W, the pulse frequency is 10 - 100 kHz, and the pulse width is 10 - 50 ns.

[0019] Preferably, the pulse width of the acoustic wave vibration effect is 10 - 30 ns and the energy density is 1 - 3 J / cm 2 .

[0020] Preferably, the ultraviolet band of the photochemical effect is 248 nm - 355 nm, and the laser energy density is 0.5 - 1.5 J / cm 2 .

[0021] Advantages of the present invention: By using the thermal effect method, the pollutants on the surface of the quartz component can quickly absorb heat, the temperature rises sharply, causing the pollutants to instantly vaporize or carbonize and quickly detach from the ceramic surface. It can effectively remove organic pollutants such as oil stains and photoresist, greatly improving the cleaning efficiency. The thermal effect can be used to locally heat and repair microcracks and defects on the surface of the ceramic component, causing microstructural adjustment and healing of the ceramic material under the action of heat and restoring the integrity and performance of the ceramic; The mechanical impact effect will generate an instantaneous high pressure, forming a mechanical impact force, which can strongly peel off stubborn pollutants such as metal particles and oxides tightly attached to the ceramic surface. Even pollutants embedded in the tiny pores on the ceramic surface can be effectively removed; The acoustic wave vibration can penetrate into the tiny pores and gaps of the ceramic, causing the pollutants therein to loosen and detach under the vibration, achieving deep cleaning, improving the cleanliness of the ceramic component, making the pollutants on the ceramic surface more likely to absorb laser energy under vibration, and enhancing the effect of the thermal effect; The photochemical effect can select a laser with a specific wavelength for irradiation according to the chemical structure and characteristics of the pollutants to achieve selective removal of the pollutants. At the same time, it can also introduce some functional groups or microstructural changes on the ceramic surface, improving the hydrophilicity, chemical stability or biocompatibility of the ceramic surface, etc., which is beneficial to subsequent process treatment and the application of the component; The plasma effect can remove the pollutants on the surface of the quartz component from both chemical reaction and physical peeling aspects, with high cleaning efficiency, capable of comprehensively removing various types of pollutants, and can generate a large number of active sites on the ceramic surface, improving the surface activity, which is beneficial to subsequent processes such as coating and bonding, enhancing the bonding force between the coating and the ceramic surface, and improving the service life and stability of the component; Through the cooperation between the above cleaning effects, it is possible to accurately select the appropriate laser wavelength according to the chemical structure, physical properties of the pollutants and their adhesion to the quartz component, greatly reducing the potential impact of the cleaning process on the quartz component, ensuring the integrity and performance of the quartz component are not damaged. At the same time, the laser beam can be shaped into the most suitable form for the cleaning task, achieving efficient and precise cleaning, perfectly meeting the requirements of precision cleaning, and avoiding environmental pollution caused by chemical waste liquid discharge and reducing the potential threat to the health of operators. It is not limited to the cleaning of metal materials, and can also show good cleaning effects for various materials such as ceramics, plastics, and glass. Detailed implementation manners

[0022] The present invention will be further described below in conjunction with embodiments.

[0023] Embodiment 1

[0024] Inspect the appearance of the instrument, the output cable, and the protective lens of the cleaning head. Turn on the instrument, set the language and the cleaning mode. Place the quartz component on the turntable near the cleaning head, align the cleaning head with the quartz component area, and the distance between the cleaning head and the component is 160 mm. Irradiate the surface of the quartz component with a laser at a wavelength of 550 nm and a power of 80 kW. When the surface substance absorbs the laser energy, the temperature rapidly rises to 1800 °C. The pollutants expand due to heat and generate thermal stress. When the thermal stress exceeds the adhesion between the pollutants and the quartz component, the pollutants will detach from the surface of the quartz component. The laser pulse concentrates the energy on the pollutants in an extremely short time. The pulse frequency is 20 KHZ, the pulse width is 30 nm, and the energy density is 2 J / cm 2 , causing the pollutants to evaporate rapidly or generate high-pressure gas. The shock wave formed by this high-pressure gas can mechanically peel off the pollutants. The high temperature generated by the laser on the material surface causes the material to expand and generate sound waves. The pulse width is 20 nm, and the energy density is 2 J / cm 2 . The sound waves propagate inside the material and separate the pollutants from the quartz component. The pollutants undergo a photochemical reaction under the irradiation of a laser with a wavelength of 255 nm and a laser energy density of 1 / cm 2 . Volatile substances are generated to achieve cleaning. The high energy density of the laser instantaneously vaporizes the surface substance to form a plasma. The shock wave generated by the expansion of the plasma removes the pollutants. After the cleaning is completed, turn off the instrument. After the component cools down, remove the component and then shut down the machine.

[0025] Example 2

[0026] Inspect the appearance of the instrument, the output cable, and the protective lens of the cleaning head. Turn on the instrument, set the language and the cleaning mode. Place the quartz component on the turntable near the cleaning head, align the cleaning head with the quartz component area, and the distance between the cleaning head and the component is 160 mm. Irradiate the surface of the quartz component with a laser at a wavelength of 1100 nm and a power of 80 kW. When the surface substance absorbs the laser energy, the temperature rapidly rises to 2000 °C. The pollutants expand due to heat and generate thermal stress. When the thermal stress exceeds the adhesion between the pollutants and the quartz component, the pollutants will detach from the surface of the quartz component. The laser pulse concentrates the energy on the pollutants in an extremely short time. The pulse frequency is 50 KHZ, the pulse width is 50 nm, and the energy density is 3 J / cm 2 , causing the pollutants to evaporate rapidly or generate high-pressure gas. The shock wave formed by this high-pressure gas can mechanically peel off the pollutants. The high temperature generated by the laser on the material surface causes the material to expand and generate sound waves. The pulse width is 30 nm, and the energy density is 3 J / cm 2 . The sound waves propagate inside the material and separate the pollutants from the quartz component. The pollutants undergo a photochemical reaction under the irradiation of a laser with a wavelength of 355 nm and a laser energy density of 1.5 / cm 2Under the laser irradiation, a photochemical reaction occurs to generate volatile substances for cleaning; the high energy density of the laser instantaneously vaporizes the surface substances to form a plasma, and the shock wave generated by the expansion of the plasma removes pollutants; after cleaning is completed, turn off the instrument, wait for the component to cool down, then remove the component and turn off the machine.

[0027] Using the precision regeneration method for LAM ceramic components of the chip manufacturing etching machine in the above-mentioned Embodiment 1 and 2, different wavelengths of lasers can be selected according to different pollutants, with little impact on quartz components. At the same time, the size and shape of the laser beam can be precisely controlled, which is suitable for precision cleaning, reduces environmental pollution, and is applicable to a variety of materials. It can not only clean metals, but also clean ceramics, plastics, glass, etc.

[0028] Embodiment 3

[0029] Inspect the appearance of the instrument, the output cable, and the protective lens of the cleaning head. Turn on the instrument, set the language and cleaning mode, place the quartz component on the turntable near the cleaning head, align the cleaning head with the quartz component area, and the distance between the cleaning head and the component is 160 mm; irradiate the surface of the quartz component with a laser with a wavelength of 500 nm and a power of 80 kW. After the surface substances absorb the laser energy, the temperature rapidly rises to 1500 °C. The pollutants expand due to heat and generate thermal stress. When the thermal stress exceeds the adhesion between the pollutants and the quartz component, the pollutants will detach from the surface of the quartz component; the laser pulse concentrates the energy on the pollutants in an extremely short time. The pulse frequency is 20 KHZ, the pulse width is 10 nm, and the energy density is 1 J / cm 2 , causing the pollutants to rapidly evaporate or generate high-pressure gas. The shock wave formed by this high-pressure gas can mechanically strip the pollutants; the high temperature generated by the laser on the material surface causes the material to expand and generate sound waves. The pulse width is 10 nm and the energy density is 1 J / cm 2 , and the sound waves propagate inside the material to separate the pollutants from the quartz component; the pollutants undergo a photochemical reaction under the laser irradiation with a wavelength of 248 nm and a laser energy density of 0.5 / cm 2 to generate volatile substances for cleaning; the high energy density of the laser instantaneously vaporizes the surface substances to form a plasma, and the shock wave generated by the expansion of the plasma removes pollutants; after cleaning is completed, turn off the instrument, wait for the component to cool down, then remove the component and turn off the machine.

[0030] Using the precision regeneration method of LAM ceramic components of the chip manufacturing etching machine in Examples 1, 2, and 3, it is possible to accurately select the appropriate laser wavelength based on the chemical structure, physical properties of the contaminants, and their adhesion to the quartz components, greatly reducing the potential impact of the cleaning process on the quartz components, ensuring the integrity and performance of the quartz components are not damaged. At the same time, it is possible to shape the laser beam into the most suitable form for the cleaning task, achieving efficient and precise cleaning, perfectly meeting the requirements of precision cleaning, and avoiding environmental pollution caused by chemical waste liquid discharge, reducing the potential threat to the health of operators. It is not limited to the cleaning of metal materials, and for various materials such as ceramics, plastics, and glass, it can also show good cleaning effects.

[0031] The embodiments of the present invention have been described in detail above in combination with the examples. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.

Claims

1. A precise regeneration method for LAM ceramic components of a chip manufacturing etching machine tool, comprising the following steps: S1: Inspect the appearance of the instrument, output cables, and the protective lens of the cleaning head. Turn on the instrument, set the language and cleaning mode, place the quartz component on the turntable near the cleaning head, and align the cleaning head with the quartz component area; S2: Thermal effect: When the laser irradiates the surface of the quartz component, the surface substance absorbs the laser energy and the temperature rises rapidly. The contaminants expand due to heat, generating thermal stress. When the thermal stress exceeds the adhesion between the contaminants and the quartz component, the contaminants will detach from the surface of the quartz component; S3: Mechanical impact effect: The laser pulse concentrates the energy on the contaminants in an extremely short time, causing the contaminants to evaporate rapidly or generate high-pressure gas. The shock wave formed by this high-pressure gas can mechanically peel off the contaminants; S4: Acoustic vibration effect: The high temperature generated by the laser on the material surface causes the material to expand and generate sound waves. The sound waves propagate inside the material and separate the contaminants from the quartz component; S5: Photochemical effect: The contaminants undergo a photochemical reaction under the irradiation of a laser with a certain wavelength, generating volatile substances to achieve cleaning; S6: Plasma effect: The high energy density of the laser instantaneously vaporizes the surface substance to form a plasma, and the shock wave generated by the expansion of the plasma removes the contaminants; S7: After the cleaning is completed, turn off the instrument. After the component cools down, remove the component and then turn off the machine.

2. The precision regeneration method of the LAM ceramic component of the chip manufacturing etching machine tool according to claim 1, characterized in that: The distance between the cleaning head and the component is 160 mm.

3. The precision regeneration method of the LAM ceramic component of the chip manufacturing etching machine tool according to claim 1, characterized in that: The laser wavelength is 500 nm to 1100 nm, and the laser power is 80 kW.

4. The precision regeneration method of the LAM ceramic component of the chip manufacturing etching machine tool according to claim 1, characterized in that: The temperature of the surface substance rises to 1500 °C to 2000 °C after absorbing the laser energy.

5. The precision regeneration method of the LAM ceramic component of the chip manufacturing etching machine according to claim 1, wherein: The pulse frequency is 20KHZ to 50KHZ, the pulse width is 10 to 50nm, and the energy density is 1 to 3J / cm 2 , and the scanning speed is 20m / s to 50m / s.

6. The precision regeneration method of the LAM ceramic component of the chip manufacturing etching machine tool according to claim 1, characterized in that: The laser energy density of the plasma effect is 2 - 5 J / cm 2 , the power is 10 - 50 W, the pulse frequency is 10 - 100 kHz, and the pulse width is 10 - 50 ns.

7. The precision regeneration method of the LAM ceramic component of the chip manufacturing etching machine according to claim 1, characterized in that: The pulse width of the acoustic wave vibration effect is 10 - 30 nm, and the energy density is 1 - 3 J / cm 2 .

8. The precision regeneration method of the LAM ceramic component of the chip manufacturing etching machine tool according to claim 1, characterized in that: The ultraviolet band of the photochemical effect is 248 nm to 355 nm, and the laser energy density is 0.5 to 1.5 J / cm 2 .