Gallium reaction mechanism, HVPE furnace tube and horizontal HVPE device

Abstract

The invention relates to a gallium reaction mechanism, an HVPE furnace tube and a horizontal HVPE device, and the gallium reaction mechanism comprises a boat box which contains liquid gallium and is placed in the furnace tube, a gallium injection opening is formed in the side wall, away from the ground, of the boat box, a gallium injection opening cover used for opening and closing the gallium injection opening is arranged on the boat box, and the section of the boat box is rectangular; the air inlet pipe is communicated with the boat box; the positions, communicated with the boat box, of the air inlet pipe and the air spraying pipe are separately arranged at the two ends of the boat box; the boat box with the rectangular cross section enables the contact area of HCl and liquid gallium to be constant in the reaction process, and the cross section is not changed along with the reduction of the gallium amount, so that the generation amount of GaCL3 is more stable, the generation amount of GaCL3 is slightly changed along with time, the stability of the crystal growth process is facilitated, the reaction rate in the gallium reactor is kept, and the yield of the gallium is increased. And the growth rate and quality of the crystal are not easily influenced, so that the crystal is not easily scrapped.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor material production, and particularly to a gallium reaction mechanism, an HVPE furnace tube, and a horizontal HVPE device. Background Art

[0002] Hydride Vapor Phase Epitaxy equipment (HVPE) is a key equipment currently used in the market for growing third-generation semiconductor materials. The gallium reactor used in this equipment is directly related to aspects such as the reaction rate control of raw materials, flow field structure, and mass transfer efficiency. It is the core component of this equipment. It can be said that the quality of the gallium reactor design directly determines whether the equipment can grow crystals, the crystal growth rate, and the crystal quality.

[0003] Essentially, the following chemical reaction occurs inside the gallium reactor; HCL(g) + Ga(l) = GaCL3(g) + H2(g) A small amount of high-purity HCL gas (above 6N) and a larger amount of high-purity N2 (used to maintain the inlet pressure) are introduced through the inlet. The high-purity gallium source (above 7N) is placed in the gallium reactor in advance. The mixed gas of HCL and N2 flows over the surface of the gallium source and undergoes a chemical reaction at a high temperature of 600 - 900 degrees Celsius to generate GaCL3 products, which are transferred to the periphery of the substrate through the jet nozzle for crystal material growth. The generation amount and generation rate stability of GaCL3 products determine the mass transfer efficiency and stability, and further affect the crystal growth rate and the magnitude of internal stress. The uneven growth rate is a key indicator for the accumulation of internal stress. When the internal stress is too large, the crystal will break during the crystal growth process, resulting in scrapping.

[0004] The material of the gallium reactor is usually quartz. Therefore, most of the existing gallium reactors have a circular cross-section or a semi-circular cross-section, and in order to ensure the connectivity performance from inlet to outlet, they are mostly made into an integral structure. This method has two major drawbacks. First, in horizontal equipment, during the reaction process of a gallium reactor with a circular cross-section, the gallium liquid level will slowly drop. As the liquid level drops, the surface area of contact with the reaction atmosphere will become smaller, resulting in a slower reaction rate. This is a variable factor that affects the crystal growth rate and quality. If this factor is not well controlled, it will lead to crystal scrapping. Summary of the Invention

[0005] In order to maintain the reaction rate inside the gallium reactor, so that the crystal growth rate and quality are not easily affected, and thus the crystal is not easily scrapped, this application provides a gallium reaction mechanism, an HVPE furnace tube, and a horizontal HVPE device.

[0006] In the first aspect, this application provides a gallium reactor for a horizontal HVPE furnace tube, and adopts the following technical solution: A gallium reaction mechanism, comprising: The boat box, containing liquid gallium, is placed inside the furnace tube. A gallium injection port is provided on the side wall of the boat box facing away from the ground. A gallium injection port cover for opening and closing the gallium injection port is provided on the boat box, and the cross-section of the boat box is rectangular. The intake pipe is connected to the boat box. The jet pipe is connected to the boat box, and the positions where the intake pipe and the jet pipe are connected to the boat box are respectively arranged at both ends of the boat box.

[0007] By adopting the above technical solution, the boat box with a rectangular cross-section makes the contact area between HCl and liquid gallium constant during the reaction process, and will not change with the reduction of the gallium amount, which makes the production amount of GaCL3 more stable, and the production amount of GaCL3 changes less with time, which is beneficial to the stability of the crystal growth process, that is, maintaining the reaction rate in the gallium reactor, so that the growth rate and quality of the crystal are not easily affected, and thus the crystal is not easily scrapped.

[0008] Optionally, a plurality of baffles are arranged in the boat box. The plurality of baffles are arranged in sequence along the length direction of the boat box, and the plurality of baffles are divided into two groups. The two groups of baffles are arranged crosswise. One side of both groups of baffles is fixedly connected to the side wall of the boat box, and the other side is spaced from the corresponding side wall of the boat box, and the two side walls of the boat box connected to the two groups of baffles are arranged opposite to each other.

[0009] By adopting the above technical solution, the arrangement of the baffles makes an S-shaped channel formed in the boat box, thereby extending the moving track length of HCl in the boat box and extending the contact time between HCl and liquid gallium, that is, the reaction time, and further improving the reaction rate of HCl and liquid gallium.

[0010] Optionally, the side of the baffle close to the ground is spaced from the side wall of the boat box to form a gap.

[0011] Optionally, the connection position between the baffle and the side wall of the boat box is set as a rounded corner.

[0012] Optionally, the connection position between the intake pipe and the side wall of the boat box is located on the side of the gap away from the ground.

[0013] Optionally, the connection position between the jet pipe and the side wall of the boat box is located on the side of the gap away from the ground.

[0014] In the second aspect, the present application provides an HVPE furnace tube, adopting the following technical solution: An HVPE furnace tube adopting the gallium reaction mechanism described in any one of the above.

[0015] In the third aspect, the present application provides a horizontal HVPE device, adopting the following technical solution: A horizontal HVPE device adopting the described furnace tube.

[0016] In summary, the present application has at least the following beneficial effects: The boat box with a rectangular cross-section ensures a constant contact area between HCl and liquid gallium during the reaction process, and the cross-section does not change as the amount of gallium decreases. This makes the production amount of GaCl3 more stable, and the production amount of GaCl3 changes less with time, which is beneficial to the stability of the crystal growth process, that is, it maintains the reaction rate in the gallium reactor, making the growth rate and quality of the crystal not easily affected, so that the crystal is not easily scrapped.

[0017] The interior of the boat box is in an "S" shape, which increases the travel distance of HCl and liquid gallium; in addition, the "S"-shaped HCl gas flow channel enables HCl and liquid gallium to be in full contact with a long reaction time, low flow rate, and long contact path length, thereby improving the reaction rate of HCl and gallium and the utilization rate of HCl and gallium. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a schematic diagram of the overall structure of Embodiment 1 of the present application; Figure 2 is a schematic diagram of the overall structure of another perspective of Embodiment 1 of the present application to show the flow direction of the gas; Figure 3 is a partial cross-sectional view of Embodiment 1 of the present application; Figure 4 is a schematic diagram of the overall structure of Embodiment 2 of the present application.

[0019] Description of the reference numerals: 100, boat box; 110, gallium injection port; 111, gallium injection port cover; 200, intake pipe; 300, jet pipe; 400, baffle; 410, first baffle; 420, second baffle; 430, gap. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] The technical solutions of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0021] Embodiment 1 of the present application discloses a gallium reaction mechanism. Embodiment 1

[0022] Referring to Figure 1 and Figure 2 , the gallium reaction mechanism includes a boat box 100, an intake pipe 200, and a jet pipe 300.

[0023] The boat box 100 contains liquid gallium, and the boat box 100 is placed inside the furnace tube. A gallium injection port 110 is opened on the side wall of the boat box 100 facing away from the ground, and a gallium injection port cover 111 for opening and closing the gallium injection port 110 is arranged on the boat box 100. In this embodiment, the gallium injection port cover 111 is threadedly connected to the side wall of the gallium injection port 110, so as to facilitate the staff to open and close the gallium injection port 110.

[0024] The intake pipe 200 and the spray pipe 300 are both communicated with the boat box 100, and the connection positions of the intake pipe 200 and the spray pipe 300 with the boat box 100 are respectively arranged at both ends of the boat box 100.

[0025] In order to extend the contact time between HCl and liquid gallium, a plurality of baffles 400 are arranged in the boat box 100. The plurality of baffles 400 are arranged in sequence along the length direction of the boat box 100, and the plurality of baffles 400 are divided into two groups. One group of baffles 400 is the first baffle 410, and the other group of baffles 400 is the second baffle 420. One side of the first baffle 410 is fixedly connected to the side wall of the boat box 100, and the other side extends towards the midline direction of the boat box 100 and extends beyond the midline of the boat box 100; both the side of the first baffle 410 facing away from and close to the ground are fixedly connected to the corresponding side of the boat box 100. One side of the second baffle 420 is fixedly connected to the side wall of the boat box 100, and the other side extends towards the midline direction of the boat box 100 and extends beyond the midline of the boat box 100, and both the side of the second baffle 420 facing away from and close to the ground are fixedly connected to the corresponding side of the boat box 100.

[0026] The side walls of the first baffle 410, the second baffle 420 and the boat box 100 where they are connected are arranged opposite to each other, and the first baffle 410 and the second baffle 420 are arranged in a cross manner, that is, a second baffle 420 is arranged between two adjacent first baffles 410, so that the first baffle 410 and the second baffle 420 form an S-shaped channel in the boat box 100, so that after HCl enters the boat box 100, it can flow in a meandering manner along the S-shaped channel, thereby extending the flow path of HCl, that is, increasing the contact time between HCl and liquid gallium.

[0027] In order to improve the connection stability between the baffle 400 and the side wall of the boat box 100, the connection position between the baffle 400 and the side wall of the boat box 100 is set as a rounded corner. At the same time, the rounded corner can reduce the disturbance of the baffle 400 itself to the gas in the boat box 100, thereby reducing the precision requirement during the processing of the reaction mechanism.

[0028] In order to improve the stability of the gallium reaction mechanism, the connection positions of the intake pipe 200 and the spray pipe 300 with the side wall of the boat box 100 are both located on the side of the gap 430 facing away from the ground and above the initial liquid level of the liquid gallium in the boat box 100.

[0029] Based on the above gallium reaction mechanism, the present application also proposes an HVPE furnace tube which adopts the above gallium reaction mechanism.

[0030] Based on the above HVPE furnace tube, the present application also proposes a horizontal HVPE device that uses the above HVPE furnace tube.

[0031] In this embodiment, the implementation principle of a gallium reaction mechanism is as follows: The staff injects liquid gallium into the boat box 100 through the gallium injection port 110, then tightens the gallium injection port cover 111, places the boat box 100 into the furnace tube, and connects the boat box 100 with the intake pipe 200 and the spray pipe 300 to achieve the installation of the boat box 100. Embodiment Two

[0032] The difference between this embodiment and Embodiment One lies in the different connection methods between the baffle 400 and the boat box 100.

[0033] When the amount of liquid gallium decreases until the liquid level of the liquid gallium is on the side of the baffle 400 close to the ground, the gas flow rate inside the boat box 100 becomes slower, and the gas volume decreases relative to the volume of the boat box 100. As a result, the contact amount between HCl and the liquid gallium inside the boat box 100 becomes less, and further the production amount of GaCL3 decreases. In view of this situation, in the present application, the side of the baffle 400 away from the ground is fixedly connected to the top wall of the boat box 100, and the side of the baffle 400 close to the ground is spaced from the bottom wall of the boat box 100 to form a gap 430. When the amount of liquid gallium is small, the liquid level of the liquid gallium sinks into the gap 430, that is, the liquid level of the liquid gallium is below the side of the baffle 400 close to the ground, so that part of the gas can flow between the baffle 400 and the liquid level of the liquid gallium. Since this part of the gas has no obstruction, its flow rate is relatively large, while the gas flow rate between the baffles 400 is small. Therefore, during the gas flow process, the gas with a small flow rate flows into the gas with a large flow rate to form a turbulent flow. On the one hand, it delays the gas flow speed, and on the other hand, it increases the amount of HCl in contact with the liquid gallium to increase the production amount of GaCL3.

[0034] In this embodiment, the implementation principle of a gallium reaction mechanism is as follows: The staff injects liquid gallium into the boat box 100 through the gallium injection port 110, then tightens the gallium injection port cover 111, places the boat box 100 into the furnace tube, and connects the boat box 100 with the intake pipe 200 and the spray pipe 300 to achieve the installation of the boat box 100.

[0035] The above are all preferred embodiments of the present application, and do not limit the protection scope of the present application accordingly. Therefore, all equivalent changes made according to the structure, shape, and principle of the present application should be covered within the protection scope of the present application.

Claims

1. A gallium reaction mechanism, characterized in that, Comprising: A boat box (100) containing liquid gallium, placed inside a furnace tube. A gallium injection port (110) is provided on the side wall of the boat box (100) facing away from the ground. A gallium injection port cover (111) for opening and closing the gallium injection port (110) is provided on the boat box (100). The cross-section of the boat box (100) is rectangular. An intake pipe (200) communicating with the boat box (100). A jet pipe (300) communicating with the boat box (100), and the positions where the intake pipe (200) and the jet pipe (300) communicate with the boat box (100) are respectively arranged at both ends of the boat box (100).

2. The gallium reaction mechanism according to claim 1, wherein, A plurality of baffles (400) are provided in the boat box (100). The plurality of baffles (400) are arranged in sequence along the length direction of the boat box (100), and the plurality of baffles (400) are divided into two groups. The two groups of baffles (400) are arranged in a cross pattern. One side of each of the two groups of baffles (400) is fixedly connected to the side wall of the boat box (100), and the other side is spaced from the corresponding side wall of the boat box (100). The two side walls of the boat box (100) connected to the two groups of baffles (400) are arranged oppositely.

3. The gallium reaction mechanism according to claim 2, wherein One side of the baffle (400) close to the ground is spaced from the side wall of the boat box (100) to form a gap (430).

4. A gallium reaction mechanism according to claim 2, characterized in that, The connection position between the baffle (400) and the side wall of the boat box (100) is provided with a rounded corner.

5. A gallium reaction mechanism according to claim 3, characterized in that, The connection position between the intake pipe (200) and the side wall of the boat box (100) is located on the side of the gap (430) facing away from the ground.

6. The gallium reaction mechanism according to claim 3, characterized in that, The connection position between the jet pipe (300) and the side wall of the boat box (100) is located on the side of the gap (430) facing away from the ground.

7. A HVPE furnace tube, characterized in that, Using the gallium reaction mechanism according to any one of claims 1-6.

8. A horizontal HVPE device, characterized in that, Using the furnace tube according to claim 7.

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