Thin metal microdefect detection system

Through the magnetic-mechanical-electrical synergistic perception architecture, the magnetic field changes are converted into capacitance changes, which solves the problem that high accuracy and high speed response cannot be achieved in traditional non-destructive detection methods, and realizes high-precision and high-speed micro-defect detection of thin metal materials.

CN120275489APending Publication Date: 2025-07-08INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202510481010.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-04-17
Publication Date
2025-07-08

AI Technical Summary

Technical Problem

Traditional non-destructive testing methods are difficult to achieve high accuracy and high-speed response to thin metal materials, especially when detecting micro defects, there are problems such as low sampling rate, poor real-time performance and low detection confidence.

Method used

Magnetic-mechanical-electrical synergistic sensing architecture is constructed using magnetic-mechanical-electrical collaborative sensing architecture, and perceived changes in magnetic field into capacitance changes, achieving high-precision and high-speed defect detection.

Benefits of technology

It realizes high-precision, in-situ and high-speed micro-defect detection of thin metal materials, breaks through the bottleneck of traditional detection technology, has high precision and high speed characteristics, and is suitable for defect detection of thin metal materials.

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Abstract

The invention relates to the technical field of defect detection, in particular to a thin metal microdefect detection system. The system comprises a magnetic force sensing unit, a variable capacitance unit, a capacitance reading unit and a control unit, wherein the magnetic force sensing unit is used for sensing magnetic field change information generated by a defect under the condition that the thin metal has the defect; and the control unit is used for controlling the capacitance reading unit to detect capacitance change information generated by the variable capacitance unit aiming at the magnetic field change information so as to determine defect information corresponding to the defect according to the capacitance change information. By the adoption of the scheme, nondestructive testing can be conducted on the defects of the thin metal material at a high speed in situ with high sensitivity.
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Description

Technical Field

[0001] The present disclosure relates to the technical field of defect detection, and particularly to a thin metal micro-defect detection system. Background Art

[0002] With the progress of technology and the development of the manufacturing industry, thin metal materials play an important role in fields such as lithium-ion batteries and electronic packaging. However, these materials are prone to defects such as pinholes, indentations, and wrinkles during the rolling process, seriously affecting their service quality. Therefore, it has become crucial to perform non-destructive testing (NDT) on metal materials to identify and evaluate these micro-defects. Traditional NDT methods, including ultrasonic, radiographic, eddy current, magnetic particle, and penetrant testing, machine vision, etc., although they can meet the detection requirements to a certain extent, they usually have deficiencies such as low sampling rate, poor real-time performance, low detection confidence, and difficulty in detecting internal defects. Summary of the Invention

[0003] The present disclosure aims to at least solve one of the technical problems in the related art to some extent.

[0004] To this end, an object of the present disclosure is to propose a thin metal micro-defect detection system for non-destructively detecting the defects of thin metal materials at high speed, in-situ, and with high sensitivity.

[0005] To achieve the above object, an embodiment of one aspect of the present disclosure provides a thin metal micro-defect detection system, including:

[0006] A magnetic-sensitive unit, a variable capacitance unit, a capacitance readout unit, and a control unit; wherein,

[0007] The magnetic-sensitive unit is configured to sense the magnetic field change information generated by the defect when the thin metal has a defect.

[0008] The control unit is configured to control the capacitance readout unit to detect the capacitance change information generated by the variable capacitance unit in response to the magnetic field change information, so as to determine the defect information corresponding to the defect according to the capacitance change information.

[0009] Optionally, the variable capacitance unit includes a dynamic capacitance component and a static capacitance component; wherein,

[0010] The dynamic capacitance component is connected to the magnetic-sensitive unit. When the defect moves in the target direction, the magnetic-sensitive unit senses the magnetic field change information generated when the defect moves and moves the distance corresponding to the magnetic field change information in the target direction, so that the dynamic capacitance component follows the magnetic-sensitive unit to move the distance.

[0011] Optionally, the variable capacitance unit further includes a support unit, and the support unit includes a movable plate, an elastic support structure, and a fixed base; wherein,

[0012] The movable plate is fixedly connected to the dynamic capacitance component and the magnetic - sensitive unit respectively;

[0013] The fixed base is fixedly connected to the static capacitance component and the first end of the elastic support structure respectively, and the movable plate is fixedly connected to the second end of the elastic support structure.

[0014] Optionally, both the dynamic capacitance component and the static capacitance component adopt a comb - tooth structure; or both the dynamic capacitance component and the static capacitance component adopt a flat - plate structure.

[0015] Optionally, the capacitance reading unit includes a capacitance charge - discharge module and a data detection module; wherein,

[0016] The data detection module is configured to detect the capacitance signal of the variable capacitance unit during the process that the control unit controls the capacitance charge - discharge module to perform a capacitance charge - discharge test on the variable capacitance unit, so as to determine the capacitance change information according to the capacitance signal.

[0017] Optionally, the data detection module includes:

[0018] A multi - frequency orthogonal excitation circuit, configured to obtain the initial capacitance signal of the variable capacitance unit, and use a multi - frequency orthogonal excitation signal and a dynamic grounding timing signal to separate the frequency response characteristics between the variable capacitance unit and the parasitic capacitance in the initial capacitance signal, so as to obtain a processed capacitance signal;

[0019] A reference capacitance network, configured to calibrate the processed capacitance signal according to the reference capacitance value corresponding to the reference capacitance network, so as to obtain a calibrated capacitance signal.

[0020] Optionally, the data detection module further includes:

[0021] The multi - physical - quantity coupling detection channel is configured to detect the target physical quantity of the variable capacitance unit on the basis of detecting the initial capacitance signal of the variable capacitance unit, wherein the target physical quantity includes at least one of inductance, temperature, and humidity;

[0022] A compensation module, configured to compensate the initial capacitance signal according to the target physical quantity detected by the multi - physical - quantity coupling detection channel, so as to obtain a compensated initial capacitance signal.

[0023] Optionally, the multi - physical - quantity coupling detection channel adopts a high - frequency dynamic sampling architecture; wherein,

[0024] The high-frequency dynamic sampling architecture is equipped with a dynamic clock synchronization engine, which is used to optimize the clock phase allocation of the dynamic clock synchronization engine according to the noise spectrum characteristics, and perform high-frequency equivalent sampling on the capacitance of the variable capacitance unit and the target physical quantity according to the optimized clock phase.

[0025] Optionally, the thin metal micro-defect detection system further includes:

[0026] A signal enhancement module, which is used to enhance the capacitance change information and send the enhanced capacitance change information to the control unit.

[0027] Optionally, when the signal enhancement module is used to enhance the capacitance change information, it is specifically used for:

[0028] Improving the signal-to-noise ratio of the capacitance change information.

[0029] In summary, the thin metal micro-defect detection system provided by the present disclosure constructs a magnetic-mechanical-electrical collaborative sensing architecture by using a magnetic-sensitive unit, a variable capacitance unit, a capacitance readout unit, and a control unit. It can sense the changes in the external environmental magnetic field, convert the magnetic field changes generated by defects into capacitance changes, break through the industry technical bottleneck of "incompatibility between high precision and high-speed response" in traditional non-destructive testing technologies, and has the characteristics of high precision, in-situ, and high speed, providing an effective technical means for the defect detection of thin metal materials.

[0030] Additional aspects and advantages of the present disclosure will be partially given in the following description, partially become obvious from the following description, or be understood through the practice of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and / or additional aspects and advantages of the present disclosure will become obvious and easy to understand from the following description of the embodiments in conjunction with the drawings, where:

[0032] Figure 1 is a schematic structural diagram of a thin metal micro-defect detection system provided by an embodiment of the present disclosure;

[0033] Figure 2 is a schematic structural diagram of a thin metal micro-defect detection system provided by another embodiment of the present disclosure;

[0034] Figure 3 is a schematic structural diagram of a variable capacitance unit provided by an embodiment of the present disclosure;

[0035] Figure 4 is a working flowchart of a superimposed signal enhancement module provided by an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0036] Embodiments of the present disclosure will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where like or similar reference numerals denote like or similar elements or elements having like or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present disclosure, and should not be construed as a limitation of the present disclosure.

[0037] The present disclosure will be described in detail below in conjunction with specific embodiments.

[0038] Figure 1 The following is a schematic structural diagram of a thin metal microdefect detection system provided by an embodiment of the present disclosure. As Figure 1 shown, the thin metal microdefect detection system includes: a magnetic - sensitive unit, a variable capacitance unit, a capacitance read - out unit, and a control unit; where

[0039] The magnetic - sensitive unit is used to sense the magnetic - field change information generated by defects in the case of defects in the thin metal.

[0040] The control unit is used to control the capacitance read - out unit to detect the capacitance change information generated by the variable capacitance unit in response to the magnetic - field change information, so as to determine the defect information corresponding to the defect according to the capacitance change information.

[0041] It should be noted that the thin metal microdefect detection system provided by the embodiments of the present disclosure constructs a magnetic - mechanical - electrical collaborative sensing architecture by using a magnetic - sensitive unit, a variable capacitance unit, a capacitance read - out unit, and a control unit. It can sense the change of the external environmental magnetic field, convert the magnetic - field change generated by the defect into a capacitance change, break through the industry technical bottleneck of "incompatibility between high precision and high - speed response" in traditional non - destructive testing technologies, and has the characteristics of high precision, in - situ, and high speed, which can provide an effective technical means for the defect detection of thin metal materials.

[0042] Optionally, Figure 2 The following is a schematic structural diagram of a thin metal microdefect detection system provided by another embodiment of the present disclosure. As Figure 2 shown, the magnetic - sensitive unit 1 can adopt a magnetic - sensitive element, and the magnetic - sensitive element is a micro - structure with magnetism, including but not limited to permanent magnets, soft magnets, or magnetic thin films, such as neodymium - iron - boron permanent magnets.

[0043] According to some embodiments, as Figure 2 shown, the surface where the magnetic - sensitive unit 1 is located is the upper surface of the variable capacitance unit 2.

[0044] Optionally, the variable capacitance unit 2 includes a dynamic capacitance component 21 and a static capacitance component 22; where

[0045] The dynamic capacitance component 21 is connected to the magnetic - field - sensitive unit 1. When the defect moves in the target direction, the magnetic - field - sensitive unit 1 senses the magnetic - field change information generated during the movement of the defect and moves a distance corresponding to the magnetic - field change information in the target direction, so that the dynamic capacitance component 21 follows the magnetic - field - sensitive unit to move the distance.

[0046] According to some embodiments, Figure 3 FIG. is a schematic structural diagram of a variable - capacitance unit provided by an embodiment of the present disclosure. As Figure 3 shown, both the dynamic capacitance component 21 and the static capacitance component 22 adopt a comb - tooth structure; alternatively, both the dynamic capacitance component 21 and the static capacitance component 22 adopt a flat - plate structure.

[0047] In some embodiments, as Figure 3 shown, when both the dynamic capacitance component 21 and the static capacitance component 22 adopt a comb - tooth structure, one or more groups of comb - tooth capacitors can be formed. The comb teeth are distributed in a parallel and staggered manner, and multiple comb - tooth capacitors can work together. When both the dynamic capacitance component 21 and the static capacitance component 22 adopt a flat - plate structure, one or more groups of flat - plate capacitors can be formed. The flat - plate capacitor can be composed of two or more parallel or nearly parallel electrode plates.

[0048] According to some embodiments, the variable - capacitance unit further includes a support unit. The support unit includes a movable plate, an elastic support structure, and a fixed base; wherein,

[0049] The movable plate is fixedly connected to the dynamic capacitance component and the magnetic - field - sensitive unit respectively;

[0050] The fixed base is fixedly connected to the static capacitance component and the first end of the elastic support structure respectively, and the movable plate is fixedly connected to the second end of the elastic support structure.

[0051] In some embodiments, the surface where the magnetic - field - sensitive unit 1 is located is the upper surface of the movable plate. The magnetic field is non - zero in the direction perpendicular to the surface of the movable plate.

[0052] According to some embodiments, the materials of the dynamic capacitance component 21 and the static capacitance component 22 can be silicon, and can generate capacitance changes under the drive of the magnetic - field - sensitive unit 1. For example, when the defect moves in the x - direction, the magnetic - field - sensitive unit 1 can drive the movable plate to move in the x - direction, causing a change in the comb - tooth capacitance. Or similarly, when the mass moves in the z - direction, it causes a change in the flat - plate capacitance.

[0053] It should be noted that by adopting the magnetic - sensitive unit 1, the dynamic capacitance component 21, and the static capacitance component 22, a variable capacitance structure of a micro - electro - mechanical system (MEMS) integrating magnetic microstructures can be formed, realizing the heterogeneous integration of magnetic materials and MEMS. Thus, the in - situ dynamic detection ability of micron - level defects is achieved, providing a new generation of online quality monitoring solutions for the precision manufacturing field, and promoting the upgrade of quality control standards in strategic industries such as new energy vehicle batteries and flexible electronics.

[0054] Optionally, the capacitance read - out unit includes a capacitance charge - discharge module and a data detection module; wherein,

[0055] The data detection module is used to detect the capacitance signal of the variable capacitance unit during the process that the control unit controls the capacitance charge - discharge module to perform a capacitance charge - discharge test on the variable capacitance unit, so as to determine the capacitance change information according to the capacitance signal.

[0056] In some embodiments, the capacitance of the variable capacitance unit can be calculated by simultaneously performing capacitance charge - discharge tests on the reference capacitance and the variable capacitance unit. The capacitance of the variable capacitance unit can also be obtained by directly charging and discharging the variable capacitance unit, or by measuring the alternating current passing through it and the voltage in the system.

[0057] According to some embodiments, the data detection module includes:

[0058] A multi - frequency orthogonal excitation circuit, which is used to obtain the initial capacitance signal of the variable capacitance unit, and adopts multi - frequency orthogonal excitation signals and dynamic grounding timing signals to separate the frequency response characteristics between the variable capacitance unit and the parasitic capacitance in the initial capacitance signal, and obtain the processed capacitance signal;

[0059] A reference capacitance network, which is used to calibrate the processed capacitance signal according to the reference capacitance value corresponding to the reference capacitance network, and obtain the calibrated capacitance signal.

[0060] In some embodiments, multi - frequency orthogonal excitation signals and dynamic grounding timing control technology can be adopted in the multi - frequency orthogonal excitation circuit to separate the frequency response characteristics of the sensing capacitance and the parasitic capacitance. Specifically, multiple frequency - orthogonal excitation signals including phase - difference excitation signals can be generated. By using the impedance difference and frequency response of the sensing capacitance and the parasitic capacitance at different frequencies, signal separation can be achieved through FFT frequency - domain analysis. Compatible with diverse detection scenarios can be realized through programmable grounding period adjustment, where the grounding period adjustment can be achieved by adjusting the grounding period length and the grounding phase.

[0061] In some embodiments, the multi-frequency orthogonal excitation circuit can support adaptive matching of different electrode structures such as parallel plates, interdigital electrodes, and three-dimensional heterogeneous structures. For example, the system can pre-store capacitance-voltage (C-V) characteristic models of different electrode structures (such as C-V curves of parallel plate, interdigital, and three-dimensional heterogeneous capacitors), and automatically identify the electrode type by scanning the voltage response characteristics of the actual capacitance.

[0062] In some embodiments, the reference capacitance network can adopt an integrated hybrid reference capacitance network, which can include fixed / variable capacitance units and a reconfigurable capacitance array, and realize environmental drift suppression in combination with a closed-loop calibration strategy. For example, a fixed capacitance unit can be used to provide a reference capacitance value as the initial reference standard for calibration. According to changes in environmental parameters, the switching combination of the variable capacitance unit and the reconfigurable capacitance array is controlled to adjust the reference capacitance value; finally, a differential comparison is made with the capacitance signal to be measured, and the output is controlled to approach the theoretical value to form a closed-loop control.

[0063] According to some embodiments, the data detection module further includes a multi-physical quantity coupling detection channel for detecting the target physical quantity of the variable capacitance unit on the basis of detecting the initial capacitance signal of the variable capacitance unit, where the target physical quantity includes at least one of inductance, temperature, and humidity.

[0064] In some embodiments, by adopting the multi-physical quantity coupling detection channel, the capacitance-inductance-temperature-humidity synchronous measurement ability can be extended to support multi-dimensional state monitoring in complex industrial field environments.

[0065] In some embodiments, a cross-sensor data fusion framework can be designed based on the multi-physical quantity coupling detection channel. For example, cross-interference can be eliminated through an adaptive calibration algorithm to achieve cross-sensor data fusion. Specifically, the initial cross-interference coefficient can be calibrated through experiments to construct a sensor coupling matrix. By integrating technologies such as multi-frequency orthogonal excitation separation signal, environmental parameter dynamic compensation, time-frequency domain hybrid filtering, and superposition enhancement, reverse elimination of cross-interference is realized.

[0066] According to some embodiments, the multi-physical quantity coupling detection channel can adopt a high-frequency dynamic sampling architecture; wherein,

[0067] A dynamic clock synchronization engine is installed in the high-frequency dynamic sampling architecture, which is used to optimize the clock phase allocation of the dynamic clock synchronization engine according to the noise spectrum characteristics, and perform high-frequency band equivalent sampling on the capacitance and target physical quantity of the variable capacitance unit according to the optimized clock phase.

[0068] In some embodiments, by leveraging multi-channel parallel sampling and phase interleaving techniques, and dynamically adjusting the clock phase based on the environmental noise spectrum, an equivalent sampling rate of over 500 kHz can be achieved, realizing equivalent sampling capabilities in the high-frequency band; by adopting a time-domain to frequency-domain joint regulation mechanism, fF-level detection stability can be maintained in various interference scenarios, achieving fF-level capacitance detection sensitivity.

[0069] In some embodiments, when the control unit determines the defect information corresponding to a defect based on capacitance change information, a mapping model between defect features and multi-physical field parameters can be established, and the defect information corresponding to the defect can be determined according to the multi-physical field parameters collected by the multi-physical quantity coupling detection channels, which can improve the accuracy of defect detection, initiate a new detection methodology based on the coupling effect of physical fields, and its miniaturization and low-power consumption characteristics can break through the adaptability limitations of traditional detection devices to complex working conditions, and can provide key technical support for constructing a distributed intelligent detection network in the era of industrial Internet of Things, and have important strategic value for realizing digital detection and predictive maintenance in the manufacturing process.

[0070] According to some embodiments, the data detection module further includes a compensation module for compensating the initial capacitance signal based on the target physical quantity detected by the multi-physical quantity coupling detection channels to obtain a compensated initial capacitance signal.

[0071] For example, the multi-physical quantity coupling detection channels may include a temperature detection channel, and the temperature-sensitive element corresponding to the temperature detection channel may be integrated in the variable capacitance unit, the capacitance readout unit, and the control unit. The compensation module can perform temperature compensation on the initial capacitance signal according to the temperature value detected by the temperature detection channel. Among them, the temperature compensation parameters used for temperature compensation can be obtained through temperature-parameter mapping, and the temperature-parameter mapping can be implemented by polynomial fitting, piecewise interpolation, or look-up table.

[0072] Optionally, the control unit includes:

[0073] A signal enhancement module for enhancing the capacitance change information and sending the enhanced capacitance change information to the controlled unit.

[0074] According to some embodiments, the signal enhancement module can enhance the capacitance change information by increasing the signal-to-noise ratio of the capacitance change information. It can be used to extract capacitance signals under the condition that the signal-to-noise ratio is less than 1.

[0075] In some embodiments, for test results containing parasitic capacitance and noise, a multi-stage noise reduction processing module can be employed to improve the signal-to-noise ratio of capacitance change information. The multi-stage noise reduction processing module can be one or a combination of noise reduction processing modules such as an internal averaging module, a parasitic capacitance measurement module, a temperature compensation module, a differential module, a filtering and noise reduction module, a superimposed signal enhancement module, a deep learning module, a neural network noise reduction module, a signal extraction module, etc. Among them, by integrating traditional filtering and adaptive algorithms and a deep learning feature extraction network, a signal enhancement and feature separation multi-period signal fusion technology can be achieved.

[0076] In some embodiments, in the internal averaging module, a fixed frequency, event-triggered, or environment-aware adaptive sampling mode can be adopted to dynamically adjust the number of samplings; weighted averaging, sliding window averaging, or mixed-domain averaging can be applied to the data, and the weights can be dynamically generated based on signal stability, environmental interference, or historical confidence.

[0077] According to some embodiments, a multi-mode measurement function can also be configured in the control unit and the noise reduction processing module can be switched. The specific combination method of the noise reduction processing module can be freely switched according to the specific test environment to achieve a high dynamic range. For example, for multi-period measurement, the Figure 4 superimposed algorithm in the superimposed signal enhancement module shown can be used to improve the signal-to-noise ratio.

[0078] In some embodiments, the multi-mode measurement function can provide a reference measurement frequency, dynamically wake up the system based on signal characteristics, analyze the noise spectrum in real time and adjust parameters, and synchronously implement time-frequency domain hybrid noise reduction processing.

[0079] According to some embodiments, the control unit can use a single-chip microcomputer, and a single-chip microcomputer communication protocol combination can be adopted to receive the capacitance signal detected by the capacitance reading unit, realizing fF-level capacitance signal reading and comprehensive optimization.

[0080] It should be noted that by constructing a three-level processing architecture of "front-end sensing-edge computing-cloud collaboration" through the control unit, the detection sensitivity at the traditional laboratory level (fF level) can be successfully transplanted to the industrial field environment, making it possible to real-time analyze weak defect signals. This technical system can be derivatively applied to multiple high-end manufacturing scenarios such as semiconductor package detection and aerospace material evaluation, which has milestone significance for promoting the intelligent transformation of industrial detection equipment and has paradigm innovation value in the field of industrial detection.

[0081] In summary, the thin metal micro-defect detection system provided by the embodiments of the present disclosure can accurately identify and evaluate micro-defects in thin metal materials by integrating advanced MEMS technology, a capacitance readout unit, and a control unit, thereby improving the quality and reliability of the materials. It can not only reduce losses caused by defects, but also be of great significance for promoting the technological progress of related industries and the improvement of product quality. It is expected to become a powerful tool for the quality control of thin metal materials, and has advantages such as high precision, small size, portability, and easy integration, with broad application prospects.

[0082] The collection, storage, use, processing, transmission, provision, and disclosure of user personal information involved in the present disclosure all comply with the provisions of relevant laws and regulations and do not violate public order and good customs.

[0083] It should be noted that personal information from users should be collected for legal and reasonable purposes and should not be shared or sold outside of these legal uses. In addition, such collection / sharing should be carried out after obtaining the informed consent of the user, including but not limited to notifying the user to read the user agreement / user notice and sign an agreement / authorization including authorizing relevant user information before the user uses the function. In addition, any necessary steps should be taken to protect and safeguard access to such personal information data and ensure that others with access to the personal information data comply with their privacy policies and procedures.

[0084] The present disclosure anticipates providing embodiments for users to selectively block the use or access of personal information data. That is, the present disclosure anticipates providing hardware and / or software to prevent or block access to such personal information data. Once personal information data is no longer needed, the risk can be minimized by restricting data collection and deleting the data. In addition, when applicable, personal identifiers are removed from such personal information to protect the privacy of users.

[0085] In the technical solution of the present disclosure, the acquisition, transmission, storage, use, processing, etc. of data all comply with the relevant provisions of national laws and regulations.

[0086] It should be noted that in the embodiments of the present disclosure, some industry-existing solutions such as certain software, components, models, etc. may be mentioned. They should be regarded as exemplary, and their purpose is only to illustrate the feasibility in the implementation of the technical solution of the present application, but it does not mean that the applicant has already or necessarily used this solution.

[0087] In the descriptions of the foregoing embodiments, the descriptions referring to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples.

[0088] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0089] Any process or method description shown in a flowchart or described in other ways herein may be understood to represent a module, segment, or portion of code including one or more executable instructions for implementing a customized logic function or process, and the scope of the preferred embodiments of the present disclosure includes additional implementations, where the functions may be executed in a substantially simultaneous manner or in a reverse order according to the functions involved, rather than in the order shown or discussed, which should be understood by those skilled in the art to which the embodiments of the present disclosure pertain.

[0090] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a definitional sequence list of executable instructions for implementing logical functions, which can be embodied specifically in any computer-readable medium for use by an instruction execution system, apparatus, or device (such as a computer-based system, a system including a processor, or other systems that can fetch and execute instructions from the instruction execution system, apparatus, or device), or used in conjunction with these instruction execution systems, apparatus, or devices. For the purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by or in conjunction with an instruction execution system, apparatus, or device. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection part with one or more wirings (electronic device), a portable computer diskette (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium can even be paper or other suitable media on which a program can be printed, because the program can be obtained electronically, for example, by optically scanning the paper or other media, followed by editing, interpretation, or other suitable processing as necessary, and then stored in a computer memory.

[0091] It should be understood that various parts of the present disclosure can be implemented using hardware, software, firmware, or a combination thereof. In the above-described embodiments, multiple steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented using hardware, as in another embodiment, any one or a combination of the following techniques well known in the art can be used: discrete logic circuits having logic gate circuits for implementing logical functions on data signals, application specific integrated circuits having suitable combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.

[0092] Those of ordinary skill in the art of this technology can understand that all or part of the steps carried by the method of implementing the above embodiments can be completed by instructing relevant hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiments.

[0093] In addition, each functional unit in various embodiments of the present disclosure may be integrated into one processing module, may exist physically alone for each unit, or two or more units may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. When the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.

[0094] The above-mentioned storage medium may be a read-only memory, a magnetic disk, an optical disc, etc. Although the embodiments of the present disclosure have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present disclosure. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present disclosure.

Claims

1. A thin metal micro-defect detection system, characterized in that, Including: A magnetic - sensitive unit, a variable - capacitance unit, a capacitance read - out unit, and a control unit; wherein, The magnetic - sensitive unit is configured to sense the magnetic - field change information generated by a defect in the presence of a thin metal defect. The control unit is configured to control the capacitance read - out unit to detect the capacitance change information generated by the variable - capacitance unit in response to the magnetic - field change information, so as to determine the defect information corresponding to the defect according to the capacitance change information.

2. The device according to claim 1, wherein, The variable - capacitance unit includes a dynamic capacitance component and a static capacitance component; wherein, The dynamic capacitance component is connected to the magnetic - sensitive unit. When the defect moves in a target direction, the magnetic - sensitive unit senses the magnetic - field change information generated by the movement of the defect and moves the magnetic - field change information a corresponding distance in the target direction, so that the dynamic capacitance component follows the magnetic - sensitive unit and moves the distance.

3. The device according to claim 2, characterized in that, The variable - capacitance unit further includes a support unit, and the support unit includes a movable plate, an elastic support structure, and a fixed base; wherein, The movable plate is fixedly connected to the dynamic capacitance component and the magnetic - sensitive unit respectively. The fixed base is fixedly connected to the static capacitance component and the first end of the elastic support structure respectively, and the movable plate is fixedly connected to the second end of the elastic support structure.

4. The device according to claim 2, characterized in that, Both the dynamic capacitance component and the static capacitance component adopt a comb - tooth structure; or both the dynamic capacitance component and the static capacitance component adopt a flat - plate structure.

5. The device according to claim 1, wherein The capacitance read - out unit includes a capacitance charge - discharge module and a data detection module; wherein, The data detection module is configured to detect the capacitance signal of the variable - capacitance unit during the process that the control unit controls the capacitance charge - discharge module to perform a capacitance charge - discharge test on the variable - capacitance unit, so as to determine the capacitance change information according to the capacitance signal.

6. The device according to claim 5, characterized in that The data detection module includes: A multi - frequency orthogonal excitation circuit, configured to obtain the initial capacitance signal of the variable - capacitance unit, and use a multi - frequency orthogonal excitation signal and a dynamic grounding timing signal to separate the frequency - response characteristics between the variable - capacitance unit and the parasitic capacitance in the initial capacitance signal, so as to obtain a processed capacitance signal. A reference capacitance network, configured to calibrate the processed capacitance signal according to the reference capacitance value corresponding to the reference capacitance network, so as to obtain a calibrated capacitance signal.

7. The device according to claim 6, characterized in that, The data detection module further includes: The multi - physical - quantity coupling detection channel is configured to detect the target physical quantity of the variable - capacitance unit on the basis of detecting the initial capacitance signal of the variable - capacitance unit, where the target physical quantity includes at least one of inductance, temperature, and humidity. A compensation module, configured to compensate the initial capacitance signal according to the target physical quantity detected by the multi - physical - quantity coupling detection channel, so as to obtain a compensated initial capacitance signal.

8. The device according to claim 7, characterized in that, The multi - physical - quantity coupling detection channel adopts a high - frequency dynamic sampling architecture; wherein, A dynamic clock synchronization engine is carried in the high-frequency dynamic sampling architecture, which is used to optimize the clock phase allocation of the dynamic clock synchronization engine according to the noise spectrum characteristics, and perform high-frequency band equivalent sampling on the capacitance of the variable capacitor unit and the target physical quantity according to the optimized clock phase.

9. The device according to claim 1, wherein The thin metal micro-defect detection system further includes: A signal enhancement module, which is used to enhance the signal of the capacitance change information and send the capacitance change information with enhanced signal to the control unit.

10. The device according to claim 9, characterized in that, When the signal enhancement module is used to enhance the signal of the capacitance change information, it specifically is used for: Improving the signal-to-noise ratio of the capacitance change information.