Semiconductor process equipment and calibration method and control device of air inlet device of semiconductor process equipment

Abstract

The invention provides semiconductor process equipment and a calibration method and a control device of a gas inlet device of the semiconductor process equipment, and the calibration method of the gas inlet device comprises the following steps: conveying gas through a reference path exhaust device with a flow controller to obtain parameter reference values meeting working conditions; gas is conveyed to the adjustment and calibration gas inlet device, and parameter adjustment and calibration values meeting the working conditions are obtained; and according to the parameter reference value and the parameter adjustment value, calculating to obtain a parameter deviation as a gas flow deviation, adjusting a gas pressure regulating valve of the selected adjustment gas inlet device to change the gas flow until the gas flow deviation meets the requirement, and completing the calibration of the adjustment gas inlet device. Compared with the prior art, the calibration method is simple in process, and the gas flow of the gas inlet device provided with the regulating valve can be equivalent to the gas flow of the gas inlet device provided with the flow controller through gas flow deviation calibration, so that the gas pressure regulating valve is equivalent to the flow controller, the usage amount of the flow controller is reduced, and the cost is effectively reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a calibration method for an air inlet device in a semiconductor process equipment, a semiconductor process equipment, a control device, and a computer-readable storage medium. Background Art

[0002] In semiconductor manufacturing processes, semiconductor process equipment is often utilized to place a semiconductor wafer in a process chamber of the semiconductor process equipment for process treatment. Such semiconductor process equipment can be, for example, a semiconductor thin film deposition equipment, a plasma ashing equipment, a plasma etching equipment, etc. Taking the semiconductor thin film deposition equipment as an example, through the semiconductor thin film deposition equipment, thin film deposition can be performed on a semiconductor wafer. Thin film deposition techniques generally include PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition).

[0003] Generally, in the process of implementing the above processes on a semiconductor wafer using semiconductor process equipment, the semiconductor wafer to be processed (e.g., a wafer) is placed in a sealed process chamber, and reaction gases required for the process reaction are provided to enter the process chamber to participate in the reaction. Among them, a flow controller is needed to control the flow rate of the reaction gases.

[0004] Taking a Mass Flow Controller (MFC) as an example, a mass flow controller is a device used to accurately measure and control the mass flow rate of gases or liquids. It not only has the function of a mass flowmeter, but more importantly, it can automatically control the gas flow rate, and can maintain the flow rate at a set value even when the system pressure fluctuates or the ambient temperature changes. Therefore, mass flow controllers can be widely applied in semiconductor process equipment.

[0005] In some cases, multiple types of reaction gases are required, and a multi-channel air inlet device is configured in the semiconductor process chamber, and a mass flow controller is configured on each air inlet device to control the flow rate of the reaction gases on the corresponding air inlet device. Mass flow controllers are costly, and the higher the control accuracy, the higher the price. However, in practical applications, for some gases with a fixed flow rate determined in a process and insensitive to gas deviation amounts, using mass flow controllers for the gas flow rates in all air inlet devices will consume a large amount of cost. Summary of the Invention

[0006] In view of the shortcomings of the related technologies described above, an object of the present disclosure is to provide a calibration method for an air intake device in a semiconductor process equipment, a semiconductor process equipment, a control device, and a computer-readable storage medium, so as to solve various problems in the related technologies.

[0007] The first aspect of the present disclosure provides a calibration method for an air intake device in a semiconductor process equipment. The semiconductor process equipment includes a process chamber, a multi-channel air intake device, and an exhaust device. The multi-channel air intake device includes a reference air intake device and at least one calibrated air intake device. The reference air intake device includes a reference air intake pipeline, a gas source, a flow controller, and a reference air intake valve assembly. Each calibrated air intake device includes a calibration air intake pipeline, a gas source, a gas pressure regulating valve, and a calibrated air intake valve assembly. The exhaust device includes an exhaust pipeline and an exhaust pump and an exhaust valve assembly provided on the exhaust pipeline. The calibration method for the air intake device includes the following steps: Supply gas by the reference air intake device: When the process chamber is in a vacuum state, open the reference air intake valve assembly in the reference air intake device, control the gas flow rate to a reference flow rate value by using the flow controller, so that the gas source in the reference air intake device transports gas to the process chamber through the reference air intake pipeline, and obtain a parameter reference value that meets the working condition requirements under the preset working condition requirements. Wherein, when the process chamber is in a vacuum state, the reference air intake valve assembly in the reference air intake device and the calibrated air intake valve assemblies in each calibrated air intake device are all closed, and the exhaust valve assembly in the exhaust device is closed; Supply gas by the calibrated air intake device: When the process chamber is in a vacuum state, open the calibrated air intake valve assembly in a selected calibrated air intake device, and the gas source in this calibrated air intake device transports gas to the process chamber through the calibration air intake pipeline, and obtain a parameter calibration value that meets the working condition requirements under the same working condition requirements. Wherein, the parameter is the chamber pressure or the gas delivery time of the process chamber; Calculate the gas flow rate deviation: Calculate the parameter deviation between the two according to the obtained parameter reference value and the parameter calibration value, and use the parameter deviation as the gas flow rate deviation; Adjust the gas pressure regulating valve, compare the gas flow rate deviation with the deviation threshold range, and when the gas flow rate deviation exceeds the deviation threshold range, adjust the gas pressure regulating valve in this calibrated air intake device; Repeat the above steps of supplying gas by the calibrated air intake device, calculating the gas flow rate deviation, and adjusting the gas pressure regulating valve until the gas flow rate deviation is within the deviation threshold range, and complete the calibration of this calibrated air intake device.

[0008] In certain examples of the first aspect, the step of placing the process chamber in a vacuum state includes: closing the reference intake valve assembly in the reference intake device and the calibration intake valve assemblies in all calibration intake devices, opening the exhaust valve assembly in the exhaust device, starting the exhaust pump, and exhausting the gas in the process chamber through the exhaust pipeline until the process chamber reaches a vacuum.

[0009] In certain examples of the first aspect, the parameter is the chamber pressure of the process chamber, the operating condition is to supply gas within a set gas supply time threshold, and the gas flow deviation is the chamber pressure deviation; the steps of calculating the chamber pressure deviation of the process chamber include: In the reference intake device, according to the reference flow value set by the flow controller, gas is supplied to the process chamber through the reference intake pipeline. When the gas supply time meets the gas supply time threshold of the operating condition, the gas supply is stopped, and the reference chamber pressure value corresponding to the gas supply time in the process chamber is obtained; In one selected calibration intake device, gas is supplied to the process chamber through the calibration intake pipeline. When the gas supply time meets the gas supply time threshold of the operating condition, the gas supply is stopped, and the calibrated chamber pressure value corresponding to the gas supply time in the process chamber is obtained; According to the obtained reference chamber pressure value and calibrated chamber pressure value, calculate the chamber pressure deviation of the process chamber as the gas flow deviation; wherein, the chamber pressure deviation is the ratio of the difference between the calibrated chamber pressure value and the reference chamber pressure value to the reference chamber pressure value.

[0010] In certain examples of the first aspect, the parameter is the gas supply time, the operating condition is that the gas supply reaches a set chamber pressure threshold, and the gas flow deviation is the gas supply time deviation; the steps of calculating the gas supply time deviation include: In the reference intake device, according to the reference flow value set by the flow controller, gas is supplied to the process chamber through the reference intake pipeline. When it is detected that the chamber pressure of the process chamber meets the chamber pressure threshold of the operating condition, the gas supply is stopped, and the reference gas supply time value corresponding to the chamber pressure is obtained; In one selected calibration intake device, gas is supplied to the process chamber through the calibration intake pipeline. When it is detected that the chamber pressure of the process chamber meets the chamber pressure threshold of the operating condition, the gas supply is stopped, and the calibrated gas supply time value corresponding to the chamber pressure is obtained; and According to the obtained reference gas supply time value and calibrated gas supply time value, calculate the gas supply time deviation as the gas flow deviation; wherein, the gas supply time deviation is the ratio of the difference between the calibrated gas supply time value and the reference gas supply time value to the reference gas supply time value.

[0011] In certain examples of the first aspect, during the process of delivering gas to the process chamber through the reference intake pipeline or during the process of delivering gas to the process chamber through the calibrated intake pipeline, the temperature inside the process chamber remains stable.

[0012] In certain examples of the first aspect, when the gas flow rate deviation exceeds the deviation threshold range, adjusting the gas pressure regulating valve in this path of the calibrated intake device includes: when the gas flow rate deviation exceeds the deviation threshold range, if it is determined that the gas flow rate of the gas delivered by the calibrated intake device is less than the gas flow rate of the gas delivered by the reference intake device, increasing the opening degree of the gas pressure regulating valve to increase the gas flow rate; when the gas flow rate deviation exceeds the deviation threshold range, if it is determined that the gas flow rate of the gas delivered by the calibrated intake device is greater than the gas flow rate of the gas delivered by the reference intake device, decreasing the opening degree of the gas pressure regulating valve to decrease the gas flow rate.

[0013] A second aspect of the present disclosure provides a semiconductor processing apparatus, including: a process chamber, a multi-path intake device, and an exhaust device. The multi-path intake device includes a reference intake device and at least one calibrated intake device. The reference intake device includes a reference intake pipeline, a gas source, a flow controller, and a reference intake valve assembly. Each calibrated intake device includes a calibration intake pipeline, a gas source, a gas pressure regulating valve, and a calibrated intake valve assembly. The exhaust device includes an exhaust pipeline and an exhaust pump and an exhaust valve assembly provided on the exhaust pipeline; wherein, the gas pressure regulating valve in the calibrated intake device is implemented by using the calibration method of the intake device in the semiconductor processing apparatus as described above.

[0014] In certain examples of the second aspect, the reference intake valve assembly includes a gas source valve corresponding to the gas source and a control valve corresponding to the flow controller, and the calibrated intake valve assembly includes a calibrated intake pipeline valve corresponding to the gas pressure regulating valve.

[0015] A third aspect of the present disclosure provides a control device, including: a processor; a memory storing a calibration program for the intake device; wherein, when the calibration program for the intake device is run by the processor, it executes the calibration method of the intake device as described above.

[0016] A fourth aspect of the present disclosure provides a computer-readable storage medium, on which a calibration program for the intake device is stored. When the calibration program for the intake device is run by the processor, it executes the calibration method of the intake device as described above.

[0017] As described above, the embodiments of the present disclosure provide a calibration method, a control device, and a computer-readable storage medium for a semiconductor process equipment and its gas inlet device, which can be used to calibrate the gas inlet device so that an ordinary gas pressure regulating valve can be equivalently substituted for a flow controller. In the calibration method of the gas inlet device, first, gas is transported through a reference path exhaust device with a flow controller to obtain a parameter reference value that meets the working conditions. Then, gas is transported to a selected calibrated gas inlet device to obtain a parameter calibration value that meets the working conditions. The parameter deviation is calculated as the gas flow deviation based on the parameter reference value and the parameter calibration value. The gas pressure regulating valve in this calibrated gas inlet device is gradually adjusted to change the gas flow until the gas flow deviation conforms to the deviation threshold range, thereby completing the calibration of this calibrated gas inlet device. Compared with the related art, the calibration method of the gas inlet device provided by the present disclosure has a simple process. Through the calibration of the gas flow deviation, the gas flow of the gas inlet device configured with a regulating valve can be equivalent to the gas flow of the gas inlet device configured with a flow controller, thereby realizing the equivalence of the gas pressure regulating valve to the flow controller, reducing the usage amount of the flow controller, and effectively reducing the cost. Description of the Drawings

[0018] Figure 1 It shows a schematic structural diagram of a semiconductor process equipment to which the calibration method of the gas inlet device of the present disclosure is applied in an embodiment.

[0019] Figure 2 It shows a schematic structural diagram of a semiconductor process equipment to which the calibration method of the gas inlet device of the present disclosure is applied in another embodiment.

[0020] Figure 3 It shows a schematic flow diagram of the calibration method of the gas inlet device in a semiconductor process equipment provided by the present disclosure in an embodiment.

[0021] Figure 4 It shows a schematic block diagram of the principle of the control device provided by the present disclosure in an embodiment. Detailed Embodiments

[0022] The following uses specific examples to illustrate the embodiments of the present disclosure. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed in the present disclosure. The present disclosure can also be implemented or applied through different specific embodiments. Various details in the present disclosure can also be modified or changed according to different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that, without conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0023] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present disclosure pertains can easily implement it. The present disclosure can be embodied in various different forms and is not limited to the embodiments described herein.

[0024] In the description of the present disclosure, the reference terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials, or characteristics represented in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials, or characteristics represented can be combined in a suitable manner in any one or a group of embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples represented in the present disclosure and the features of different embodiments or examples.

[0025] Furthermore, the terms "first" and "second" are only used for illustrative purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present disclosure, the meaning of "a group" is two or more, unless otherwise specifically defined.

[0026] To clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same or similar components throughout the specification are given the same reference numerals.

[0027] Throughout the specification, when it is said that a device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" with other elements interposed therebetween. In addition, when it is said that a certain device "includes" a certain component, unless there is a particularly contrary record, it does not exclude other components, but means that other components can also be included.

[0028] Although in some examples the terms first, second, etc. are used herein to denote various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first interface and a second interface, etc. are indicated. Furthermore, as used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, modules, items, kinds, and / or groups, but do not preclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, modules, items, kinds, and / or groups. The term "or" and "and / or" used herein are interpreted inclusively, or meaning any one or any combination. Thus, "A, B, or C" or "A, B, and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B, and C". An exception to this definition occurs only when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some manner.

[0029] The technical terms used herein are only for referring to specific embodiments and are not intended to limit the present disclosure. The singular forms used herein also include the plural forms as long as the context does not clearly indicate the contrary. The meaning of "including" used in the specification is to embody specific characteristics, regions, integers, steps, operations, elements, and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements, and / or components.

[0030] Although not defined differently, all terms, including the technical and scientific terms used herein, have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries are additionally interpreted to have a meaning consistent with the relevant technical literature and the current disclosure, and should not be over-interpreted as ideal or overly formulaic meanings unless otherwise defined.

[0031] In the process of semiconductor wafer manufacturing, strict requirements are imposed on the accuracy of pressure control and airtightness in the process chamber to ensure the product quality and yield of semiconductor wafers during the manufacturing process. For this purpose, a flow controller is needed to control the flow rate of the reaction gas. For example, the flow controller can adopt a mass flow controller (MFC) to accurately measure and control the mass flow rate of the reaction gas. However, the cost of the mass flow controller is relatively high. When a multi-inlet device needs to be configured in the semiconductor process chamber due to process requirements, if a mass flow controller is configured for each inlet device, the overall cost will increase.

[0032] An embodiment of the present disclosure provides a calibration method for an intake device in a semiconductor process equipment. The method is used to calibrate the intake device equipped with a gas pressure regulator by performing flow equivalence processing on the intake device equipped with a gas pressure regulator compared to the intake device equipped with a flow controller, so as to realize the equivalence of the gas pressure regulator to the flow controller, reduce the usage amount of the flow controller, and effectively reduce costs.

[0033] Please refer to Figure 1 , which shows a schematic structural diagram of a semiconductor process equipment to which the calibration method of the intake device of the present disclosure is applied in an embodiment.

[0034] As Figure 1 shown, the semiconductor process equipment in this embodiment may include: a process chamber 10, a wafer carrier 11, a multi-channel intake device, and an exhaust device.

[0035] The semiconductor process equipment may be, for example, a semiconductor thin film deposition equipment, a plasma stripping equipment, a plasma etching equipment, etc. Taking the semiconductor thin film deposition equipment as an example, through the semiconductor thin film deposition equipment, thin film deposition can be performed on a semiconductor wafer (such as a wafer) in the process chamber. Thin film deposition technologies usually include PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition).

[0036] The process chamber 10 includes a closed chamber with side walls, and a wafer carrier 11 is arranged in the central area of the closed chamber.

[0037] The process chamber is connected to a multi-channel intake device. In some embodiments, the top of the process chamber is connected to the multi-channel intake device. In some embodiments, the side of the process chamber is connected to the multi-channel intake device. In some embodiments, the top and side of the process chamber are connected to the multi-channel intake device.

[0038] An inlet and outlet may be opened on the side wall of the process chamber 10. The transfer of related workpieces can be realized by using the inlet and outlet. The workpieces include, but are not limited to, wafers, etc. Generally, a first slit valve is provided at the inlet and outlet, and the first slit valve can move in the up and down direction or the left and right direction relative to the inlet and outlet.

[0039] The wafer carrier 11 is arranged in the process chamber 10 and is used to carry the semiconductor wafer 100. The semiconductor wafer 100 may be, for example, a wafer. In some embodiments, only one semiconductor wafer 100 is subjected to the thin film deposition process in the process chamber 10 at a time. Therefore, the wafer carrier 11 is located at the central position of the process chamber 10.

[0040] In some embodiments, an adsorption structure for adsorbing the semiconductor wafer 100 is further provided on the wafer carrier 11. Exemplarily, the adsorption structure may include, for example, an adsorption groove and an adsorption pump.

[0041] In some embodiments, a heating device (not shown in the figures) may be provided below the wafer carrier 11 for heating the loaded semiconductor wafer 100 to a desired temperature. In some embodiments, the side wall surface and the top cover surface of the process chamber 10 may be coated with a high-reflection film or surface-polished to reflect the thermal radiation heated by the heating device back to the surface of the wafer carrier 11 and the semiconductor wafer 100 carried thereon.

[0042] In some embodiments, the side wall surface and the top cover surface of the process chamber 10 may be coated with a high-reflection film or surface-polished to reflect the thermal radiation heated by the heating device back to the surface of the wafer carrier 11 and the semiconductor wafer 100 carried thereon.

[0043] In some embodiments, the wafer carrier 11 may be associated with a moving component. By using the moving component, the wafer carrier 11 can be driven to move. Exemplarily, the moving component may be, for example, a lifting component, which can drive the wafer carrier 11 and the semiconductor wafer 100 carried thereon to perform lifting movement.

[0044] In some embodiments, the wafer carrier 11 may be associated with a rotating device. The rotating device may include a selected rotating member and a rotating power mechanism. The rotating member may be hermetically arranged with the wafer carrier 11 and the process chamber 10. Through the selected power mechanism, the rotating member and the associated wafer carrier 11 and the semiconductor wafer 100 carried thereon can be driven to perform reciprocating rotation, which can make the deposition of the thin film on the semiconductor wafer 100 more uniform.

[0045] The exhaust device is used to extract the reaction gas in the process chamber. As Figure 1 shown, the exhaust device includes an exhaust pipeline connected to the process chamber 10 and an exhaust valve assembly 13 and an exhaust pump 14 provided on the exhaust pipeline.

[0046] In some embodiments, the exhaust valve assembly includes an exhaust valve.

[0047] In some embodiments, the exhaust valve assembly includes a combination of an exhaust valve and a throttle valve. Exemplarily, the exhaust valve may be, for example, an ordinary exhaust valve. Exemplarily, the exhaust valve may be, for example, a combination of a quick exhaust valve and a slow exhaust valve. Among them, the slow exhaust valve is used to establish an initial vacuum environment, and the quick exhaust valve is used to more quickly discharge the remaining gas to achieve a lower vacuum degree. The throttle valve may be, for example, an exhaust butterfly valve, which can achieve an opening degree of 0% to 100%.

[0048] When depositing a thin film on a semiconductor wafer, the semiconductor wafer can be fed into a process chamber and placed on a wafer carrier stage, and the semiconductor wafer is heated and kept warm. Corresponding reaction gases are introduced into the process chamber through an air inlet device to deposit a required thin film on the surface of the semiconductor wafer.

[0049] Generally, when introducing reaction gases into the process chamber through the air inlet device, it is necessary to control the flow rate of the reaction gases according to process requirements.

[0050] In the related art, a flow controller is configured on each air inlet device to control the flow rate of the reaction gases. The flow controller can be, for example, a Mass Flow Controller (MFC). Through the mass flow controller, precise measurement and control of the reaction gases can be achieved. However, the cost of the mass flow controller is relatively high. And in some wafer manufacturing processes, there are certain processes that only require gases with a fixed flow rate and are not sensitive to gas deviation amounts, and there is no need for precise measurement of the gas flow rate and the flow control is not frequent (for example, the semiconductor process is simple and the reaction gas is single, and only one adjustment is required). At this time, using a mass flow controller seems to be overkill.

[0051] Therefore, in the semiconductor process equipment provided by the embodiments of the present disclosure, the air inlet device is improved.

[0052] As Figure 1 shown, a top cover is provided at the upper part of the process chamber 10, and a nozzle or nozzle assembly 101 facing the wafer carrier stage 11 is provided on the top cover for spraying reaction gases onto the wafer carrier stage 11.

[0053] The nozzle or nozzle assembly 101 is connected to a multi-way air inlet device for delivering reaction gases into the process chamber 10.

[0054] The multi-way air inlet device includes one reference air inlet device and at least one calibration air inlet device.

[0055] The reference air inlet device includes a reference air inlet pipeline, a gas source, a flow controller, and a reference air inlet valve assembly. In some embodiments, the reference air inlet valve assembly includes a reference air inlet pipeline valve, which can be arranged on the reference air inlet pipeline (for example, arranged between the gas source and the flow controller, or arranged after the flow controller). In some embodiments, the reference air inlet valve assembly includes a gas source valve and a controller valve. The gas source valve is arranged after the gas source, and the controller valve is arranged after the flow controller. In as Figure 1In the illustrated embodiment, the reference intake device includes a reference intake pipeline, a gas source GS0, a mass flow controller MFC, a gas source valve FV0 located after the gas source GS0 and before the mass flow controller MFC, and a controller valve V0 located after the mass flow controller MFC. The gases that the gas source can provide include, but are not limited to, silane (SiH4), methane (CH4), ammonia (NH3), oxygen (O2), nitrogen (N2), etc.

[0056] Each calibration intake device includes a calibration intake pipeline, a gas source, a gas pressure regulator, and a calibration intake valve assembly. In some embodiments, the calibration intake valve assembly includes a calibration intake pipeline valve that can be disposed on the calibration intake pipeline (for example, between the gas source and the gas pressure regulator, or after the gas pressure regulator). In Figure 1 the illustrated embodiment, the first calibration intake device includes a first calibration intake pipeline, a gas source GS1, a first gas pressure regulator RV1, and a first calibration intake pipeline valve V1 located after the first gas pressure regulator RV1; the second calibration intake device includes a second calibration intake pipeline, a gas source GS2, a second gas pressure regulator RV2, and a second calibration intake pipeline valve V2 located after the second gas pressure regulator RV2;...; the nth calibration intake device includes an nth calibration intake pipeline, a gas source GSn, an nth gas pressure regulator RVn, and an nth calibration intake pipeline valve Vn located after the nth gas pressure regulator RVn. Among them, the gases that the gas source can provide include, but are not limited to, silane (SiH4), methane (CH4), ammonia (NH3), oxygen (O2), nitrogen (N2), etc.

[0057] In addition, in some embodiments, the multi-channel intake device may further be provided with a total intake valve, that is, the reference intake device and at least one calibration intake device share the total intake valve, that is, a total intake valve is provided between the reference intake device and at least one calibration intake device and the process chamber. Please refer to Figure 2 , which shows a schematic structural diagram of a semiconductor process equipment applied to the calibration method of the intake device of the present disclosure in another embodiment. As Figure 2 shown, the reference intake device and at least one calibration intake device share a total intake valve Vin, that is, a total intake valve Vin is provided between the reference intake device and at least one calibration intake device and the process chamber 10.

[0058] In addition, the semiconductor process equipment further includes a pressure detection device. In some embodiments, as Figure 1 or Figure 2 described, the pressure detection device 15 is a pressure gauge associated with the process chamber 10, and the pressure inside the process chamber 15 can be detected in real time through the pressure gauge.

[0059] In the embodiments of the present disclosure, a common gas pressure regulator is used to replace or partially replace a high-precision flow controller, which can reduce the equipment cost to a certain extent. At the same time, the equivalent effect of precise control as that of the flow controller can be achieved by fine-tuning the gas pressure regulator in real time, ensuring the overall performance of the system and meeting the requirements of semiconductor manufacturing processes.

[0060] In order to enable the calibrated intake device configured with a gas pressure regulator to have the same or substantially the same flow control function as the reference intake device configured with a flow controller to meet the requirements of the wafer manufacturing process, it is necessary to calibrate the gas pressure regulator in each calibrated intake device so that it has the same or substantially the same function as the flow controller.

[0061] Therefore, the present disclosure provides a calibration method for an intake device in a semiconductor process equipment. The semiconductor process equipment includes a plurality of intake devices, and the plurality of intake devices include one reference intake device and at least one calibrated intake device. The reference intake device is configured with a flow controller, and each calibrated intake device is configured with a gas pressure regulator. The calibration method of the intake device sets relevant conditions to make the gas supply state of a calibrated intake device to be calibrated approach the gas supply state of the reference intake device, and gradually fine-tune the gas pressure regulator, so that the gas flow generated by the gas pressure regulator in the calibrated intake device is the same or substantially the same as the gas flow controlled by the reference intake device, thereby achieving the equivalence of the calibrated intake device and the reference intake device in gas flow control.

[0062] Please refer to Figure 3 , which shows a schematic flow chart of the calibration method for an intake device in a semiconductor process equipment provided by the present disclosure in an embodiment.

[0063] Step S301: In the case where the process chamber is in a vacuum state, open the reference intake valve assembly in the reference intake device, and use the flow controller to control the gas flow to a reference flow value, so that the gas source in the reference intake device delivers gas to the process chamber through the reference intake pipeline, and obtain a parameter reference value that meets the working condition requirements.

[0064] In step S301, first, the process chamber needs to be in a vacuum state.

[0065] In some embodiments, the gas in the process chamber is evacuated through an exhaust device. In practical applications, close all the intake devices. For example, close the reference intake valve assembly of the reference intake device and the calibration intake valve assemblies of all the calibrated intake devices. Open the exhaust valve assembly in the exhaust device and start the exhaust pump to evacuate the gas in the process chamber.

[0066] In some embodiments, the exhaust time can be set, and the exhaust device exhausts gas according to the exhaust time. After continuous exhaust and reaching the exhaust time, the exhaust valve assembly and the exhaust pump are closed to stop the exhaust. Exemplarily, the exhaust time can be, for example, dozens of seconds or several minutes, such as 30 seconds, 45 seconds, 60 seconds, 75 seconds, 90 seconds, 120 seconds, etc.

[0067] When the process chamber is in a vacuum state, the reference intake valve assembly in the reference intake device and the calibration intake valve assemblies in each calibration intake device are all closed, and the exhaust valve assembly in the exhaust device is closed.

[0068] Subsequently, the reference intake valve assembly in the reference intake device is opened, and the gas flow rate is controlled by a flow controller to a reference flow rate value, so that the gas source in the reference intake device delivers gas to the process chamber through the reference intake pipeline until, when the preset operating conditions are met, the corresponding parameter reference value is obtained.

[0069] In some embodiments, the operating condition is to deliver gas within a set gas delivery time threshold, and the parameter is the chamber pressure of the process chamber.

[0070] In some embodiments, the operating condition is to deliver gas until a set chamber pressure threshold is reached, and the parameter is the gas delivery time.

[0071] During the implementation of step S301, the temperature in the process chamber is always maintained at a set temperature value.

[0072] Step S303, in the case where the process chamber is in a vacuum state, the calibration intake valve assembly in a selected calibration intake device is opened, and the gas source in this calibration intake device delivers gas to the process chamber through the calibration intake pipeline to obtain a parameter calibration value that meets the operating conditions.

[0073] The calibration of the gas pressure regulating valves in each calibration intake device is carried out one by one for each calibration intake device. Now, an example of a selected calibration intake device will be used for illustration.

[0074] In step S303, first, the process chamber needs to be in a vacuum state.

[0075] In some embodiments, the gas in the process chamber is evacuated through the exhaust device. In practical applications, each intake device is closed. For example, the reference intake valve assembly of the reference intake device is closed and the calibration intake valve assemblies of each calibration intake device are closed. The exhaust valve assembly in the exhaust device is opened, and the exhaust pump is started to evacuate the gas in the process chamber.

[0076] When the process chamber is in a vacuum state, the reference intake valve assembly in the reference intake device, the calibration intake valve assemblies in each calibration intake device, and the exhaust valve assembly in the exhaust device are all closed.

[0077] Subsequently, open the calibration intake valve assembly in one selected calibration intake device, and let the gas source in this calibration intake device transport gas to the process chamber through the calibration intake pipeline until, when the preset operating conditions are met, obtain the corresponding parameter calibration value.

[0078] Among them, the operating conditions are the same as those in the aforementioned step S301, and the parameters are the same as those in the aforementioned step S301.

[0079] In some embodiments, the operating condition is to transport gas within a set gas transport time threshold, and the parameter is the chamber pressure of the process chamber.

[0080] In some embodiments, the operating condition is to transport gas until a set chamber pressure threshold is reached, and the parameter is the gas transport time.

[0081] During the implementation of step S303, keep the temperature in the process chamber always at a set temperature value.

[0082] Step S305, according to the obtained parameter reference value and parameter calibration value, calculate the parameter deviation between the two, and use the parameter deviation as the gas flow rate deviation.

[0083] In step S305, compare the parameter reference value obtained from step S301 with the parameter calibration value obtained from step S303, and calculate the parameter deviation between the two.

[0084] In some embodiments, the parameter reference value is the chamber pressure reference value, and the parameter calibration value is the chamber pressure calibration value, then compare the chamber pressure reference value with the chamber pressure calibration value, and calculate the chamber pressure deviation between the two.

[0085] In some embodiments, the parameter reference value is the gas transport time reference value, and the parameter calibration value is the gas transport time calibration value, then compare the gas transport time reference value with the gas transport time calibration value, and calculate the gas transport time deviation between the two.

[0086] Step S307, compare the gas flow rate deviation with the deviation threshold range, and determine whether the gas flow rate deviation is within the deviation threshold range.

[0087] In step S307, the gas flow rate deviation calculated in step S305 is compared with a preset deviation threshold range. If the gas flow rate deviation exceeds the deviation threshold range, proceed to step S309; if the gas flow rate deviation is within the deviation threshold range, it indicates that the gas pressure regulating valve in this path of the calibrated intake device is equivalent to the flow controller in the reference intake device in terms of gas flow rate control.

[0088] In some embodiments, the parameter reference value is the cavity pressure reference value, the parameter calibration value is the cavity pressure calibration value. According to the cavity pressure reference value and the cavity pressure calibration value, the cavity pressure deviation between the two is calculated as the gas flow rate deviation, and the cavity pressure deviation is compared with a preset cavity pressure deviation threshold range.

[0089] Wherein, the cavity pressure deviation is the ratio of the difference between the cavity pressure calibration value and the cavity pressure reference value to the cavity pressure reference value. Specifically, the calculation formula for the cavity pressure deviation as the gas flow rate deviation is: [(P2 - P1) / P1]*100%, where P1 represents the cavity pressure reference value of the corresponding reference intake device, and P2 represents the cavity pressure calibration value of the corresponding calibrated intake device.

[0090] In some embodiments, the parameter reference value is the gas transmission time reference value, the parameter calibration value is the gas transmission time calibration value. According to the gas transmission time reference value and the gas transmission time calibration value, the gas transmission time deviation between the two is calculated as the gas flow rate deviation, and the gas transmission time deviation is compared with a preset gas transmission time deviation threshold range.

[0091] Wherein, the gas transmission time deviation is the ratio of the difference between the gas transmission time calibration value and the gas transmission time reference value to the gas transmission time reference value. Specifically, the calculation formula for the gas flow rate deviation as the gas flow rate deviation is: [(T2 - T1) / T1]*100%, where T1 represents the gas transmission time reference value of the corresponding reference intake device, and T2 represents the gas transmission time calibration value of the corresponding calibrated intake device.

[0092] In some embodiments, the deviation threshold range can be set as [-a%, +a%]. For example, the deviation threshold range is [-3%, +3%], or [-1%, +1%], [-2%, +2%], [-4%, +4%], [-5%, +5%], etc.

[0093] In some embodiments, the deviation threshold range can be set as [-a%, +b%], where a and b are different numbers. For example, the deviation threshold range is [-1%, +2%], or [-2%, +3%], [-2%, +1%], [-3%, +2%], etc.

[0094] In step S307, the calculated gas flow rate deviation is compared with the deviation threshold range. If the gas flow rate deviation is within the deviation threshold range, it indicates that the gas pressure regulating valve in this calibrated intake device is equivalent to the flow controller in the reference intake device in terms of gas flow rate control. If the gas flow rate deviation exceeds the deviation threshold range, it indicates that there is a large difference between the gas flow rate in this calibrated intake device and the gas flow rate in the reference intake device.

[0095] Step 309, adjust the gas pressure regulating valve in the selected calibrated intake device.

[0096] In step S309, according to step S307, when the gas flow rate deviation exceeds the deviation threshold range, adjust the gas pressure regulating valve in this calibrated intake device according to the gas flow rate deviation.

[0097] After step S309, continue to repeat steps S303 to S309 until the gas flow rate deviation is within the deviation threshold range, and complete the calibration of this calibrated intake device.

[0098] As can be seen from the above, the calibration method of the intake device in the semiconductor process equipment provided by the present disclosure first conveys gas through the reference exhaust device with a flow controller to obtain the parameter reference value that meets the working conditions, and then conveys gas to the selected calibrated intake device to obtain the parameter calibration value that meets the working conditions. The parameter deviation is calculated based on the parameter reference value and the parameter calibration value as the gas flow rate deviation, and the gas pressure regulating valve in this calibrated intake device is gradually adjusted to change the gas flow rate until the gas flow rate deviation meets the deviation threshold range, thereby completing the calibration of this calibrated intake device, realizing the equivalence of the gas pressure regulating valve to the flow controller, reducing the usage amount of the flow controller, and effectively reducing costs. In particular, for some gases with a fixed flow rate determined in the process and insensitive to the gas deviation amount, using the calibration method of the intake device in the semiconductor process equipment provided by the present disclosure can enable ordinary gas pressure regulating valves to equivalently replace most of the flow controllers, thereby reducing the usage amount of the flow controllers in the semiconductor process equipment, achieving a good effect of cost reduction and efficiency improvement, and ensuring the normal operation of related processes or equipment and product quality.

[0099] The following combines Figure 1 (or Figure 2 ) and Figure 3 , and describes in detail the calibration methods under different parameter conditions. Among them, in Figure 1 and Figure 2In the semiconductor processing equipment shown, the mass flow controller (MFC) used in the flow controller configured in the reference gas inlet device is only for illustrative purposes. In other embodiments, other types of flow controllers may also be used, which is not intended to limit the protection scope of the present disclosure.

[0100] In some embodiments, the operating condition is to supply gas within a set gas supply time threshold, and the parameter is the chamber pressure of the process chamber.

[0101] The reference gas inlet device measures: First, place the process chamber in a vacuum state. The specific operations may include the following sub-steps: Close each gas inlet device. For example, as Figure 1 shown, close the reference gas inlet valve assembly of the reference gas inlet device (e.g., the reference gas pipeline valve, or the gas source valve FV0 and the controller valve V0) and close the calibration gas inlet valve assemblies of each calibration gas inlet device (e.g., the calibration gas pipeline valves V1, V2,..., Vn), or, as Figure 2 shown, close the reference gas inlet valve assembly of the reference gas inlet device (e.g., the reference gas pipeline valve, or the gas source valve FV0 and the controller valve V0), close the calibration gas inlet valve assemblies of each calibration gas inlet device (e.g., the calibration gas pipeline valves V1, V2,..., Vn), and close the main gas inlet valve Vin.

[0102] Open the exhaust valve assembly 13 in the exhaust device and start the exhaust pump 14 to evacuate the gas in the process chamber 10.

[0103] In some embodiments, an exhaust time can be set, and the exhaust device exhausts gas according to the exhaust time. After continuous exhaust and reaching the exhaust time, close the exhaust valve assembly and the exhaust pump to stop the exhaust. Exemplarily, the exhaust time can be, for example, dozens of seconds or minutes, such as 30 seconds, 45 seconds, 60 seconds, 75 seconds, 90 seconds, 120 seconds, etc.

[0104] After completing the exhaust and evacuation, close the exhaust valve assembly 13 in the exhaust device and turn off the exhaust pump 14.

[0105] Next, open the reference intake valve assembly in the reference intake device (e.g., the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0), and use a mass flow controller to control the gas flow to a reference flow value, so that the gas source GS0 in the reference intake device supplies gas to the process chamber 10 through the reference intake pipeline and makes the gas stable in the process chamber 10. Stop supplying gas until the gas transmission time meets the gas transmission time threshold of the working condition. Record the current chamber pressure reference value of the process chamber 10. Here, the gas flow unit can be sccm (standard cubic centimeter per minute), and the gas transmission time unit can be minutes or seconds. During the gas supply process, keep the temperature in the process chamber always at a set temperature value.

[0106] Exemplarily, use a mass flow controller to control the gas (e.g., N2) to be supplied to the process chamber at a reference flow value (e.g., 1500 sccm). When the gas transmission time meets the gas transmission time threshold of the working condition (e.g., 60 seconds, 90 seconds, 120 seconds, etc.), close the reference intake valve assembly in the reference intake device (e.g., the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0) to stop gas supply. During this gas transmission time, the supplied gas can fill the process chamber 10 and be stable in the process chamber 10. At this time, record the current chamber pressure reference value P1 of the process chamber 10.

[0107] Measurement of one path of calibration intake device to be calibrated: First, put the process chamber in a vacuum state. The specific operation may include the following sub-steps: Close all intake devices. For example, as Figure 1 shown, close the reference intake valve assembly of the reference intake device (e.g., the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0) and close the calibration intake valve assemblies of each path of the calibration intake device (e.g., calibration intake pipeline valves V1, V2,..., Vn), or as Figure 2 shown, close the reference intake valve assembly of the reference intake device (e.g., the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0), close the calibration intake valve assemblies of each path of the calibration intake device (e.g., calibration intake pipeline valves V1, V2,..., Vn), and close the total intake valve Vin.

[0108] If all intake devices have been closed in the above steps of measuring the reference intake device, the operation of closing all intake devices can be omitted.

[0109] Open the exhaust valve assembly 13 in the exhaust device and start the exhaust pump 14 to evacuate the gas in the process chamber 10.

[0110] In some embodiments, the exhaust time can be set, and the exhaust device exhausts according to the exhaust time. After continuous exhaust and reaching the exhaust time, the exhaust valve assembly and the exhaust pump are closed to stop the exhaust. Exemplarily, the exhaust time can be, for example, dozens of seconds or several minutes, such as 30 seconds, 45 seconds, 60 seconds, 75 seconds, 90 seconds, 120 seconds, etc.

[0111] After completing the exhaust and evacuation, close the exhaust valve assembly 13 in the exhaust device and turn off the exhaust pump 14.

[0112] Next, open the calibration intake valve assembly (for example, the calibration intake pipeline valve V1 in the first calibration intake device) in one selected calibration intake device (for example, the first calibration intake device), and the gas source in this calibration intake device conveys gas to the process chamber 10 through the calibration intake pipeline and stabilizes the gas in the process chamber 10 until the gas transmission time meets the gas transmission time threshold of the working condition, then stop gas transmission, and record the current chamber pressure calibration value of the process chamber 10. Among them, during the process of gas transmission, keep the temperature in the process chamber always at a set temperature value.

[0113] Exemplarily, the selected first calibration intake device conveys gas (for example, N2) to the process chamber. When the gas transmission time meets the gas transmission time threshold of the disclosure condition (for example, 60 seconds, 90 seconds, 120 seconds, etc.), close the calibration intake valve assembly (for example, the calibration intake pipeline valve V1) in the first calibration intake device to stop gas transmission. During this gas transmission time, the conveyed gas can fill the process chamber 10 and stabilize in the process chamber 10. At this time, record the current chamber pressure calibration value P2 of the process chamber 10.

[0114] Calculation of gas flow deviation: According to the obtained chamber pressure reference value and chamber pressure calibration value, calculate the chamber pressure deviation between the two, and the chamber pressure deviation is used as the gas flow deviation.

[0115] Exemplarily, using the recorded chamber pressure reference value P1 and chamber pressure calibration value P2, according to the calculation formula: [(P2 - P1) / P1]*100%, calculate the chamber pressure deviation as the gas flow deviation.

[0116] Comparison of gas flow deviation with deviation threshold range: Compare the calculated chamber pressure deviation with the preset chamber pressure deviation threshold range.

[0117] Exemplarily, the calculated cavity pressure deviation [(P2 - P1) / P1]*100% is compared with the cavity pressure deviation threshold range (e.g., [-a%, +a%] or [-a%, +b%]).

[0118] If the cavity pressure deviation is within the cavity pressure deviation threshold range, it indicates that the gas pressure regulator (e.g., the gas pressure regulator RV1 in one path of the calibrated intake device) in this path of the calibrated intake device is equivalent to the mass flow controller MFC in the reference intake device in terms of gas flow control.

[0119] If the cavity pressure deviation exceeds the cavity pressure deviation threshold range, the gas pressure regulator in this path of the calibrated intake device is adjusted according to the calculated cavity pressure deviation.

[0120] Exemplarily, taking the cavity pressure deviation threshold range [-a%, +a%] as an example: If the cavity pressure deviation exceeds the lower limit -a% of the cavity pressure deviation threshold range, that is, the cavity pressure calibration value P2 is lower than the cavity pressure reference value P1 and the difference is large, it indicates that the gas flow rate of this path of the calibrated intake device is low. Adjust the gas pressure regulator in this path of the calibrated intake device, for example, increase the opening degree of the gas pressure regulator to increase the gas flow rate. If the cavity pressure deviation exceeds the upper limit +a% of the cavity pressure deviation threshold range, that is, the cavity pressure calibration value P2 is higher than the cavity pressure reference value P1 and the difference is large, it indicates that the gas flow rate of this path of the calibrated intake device is high. Adjust the gas pressure regulator in this path of the calibrated intake device, for example, decrease the opening degree of the gas pressure regulator to decrease the gas flow rate.

[0121] In some embodiments, gas flow analysis can be performed on the characteristics of the gas pressure regulator. For example, for different gases, the gas pressure regulator is adjusted to different opening degrees, and the corresponding gas flow rates are recorded. Through gas flow analysis, the gas flow rate distribution curve that the gas pressure regulator can control for the target gas within the entire opening degree range can be obtained. In this way, after calculating the cavity pressure deviation, the target opening degree or the adjustment range of the opening degree of the gas pressure regulator can be determined according to the gas flow rate distribution curve, and adjustment can be made accordingly to achieve precise control.

[0122] Subsequently, continue the measurement of the cavity pressure calibration value, the calculation of the cavity pressure deviation, and the comparison of the cavity pressure deviation with the cavity pressure deviation threshold range in the aforementioned one path of the intake device to be calibrated for verification; if the cavity pressure deviation still exceeds the cavity pressure deviation threshold range, then adjust the gas pressure regulator again and continue the aforementioned operations until the cavity pressure deviation is within the cavity pressure deviation threshold range, so that the gas pressure regulator in this path of the calibrated intake device is equivalent to the flow controller in the reference intake device in terms of gas flow control.

[0123] After completing the calibration of the gas pressure regulator in this path of the intake device, the next path of the intake device can be selected, and the foregoing calibration method is executed, and so on, until the calibration of the gas pressure regulators in all multiple paths of the intake device is completed.

[0124] In some embodiments, the working condition is that the gas transmission reaches a set cavity pressure threshold, and the parameter is the gas transmission time.

[0125] Measure according to the reference intake device: First, place the process cavity in a vacuum state. The specific operations may include the following sub-steps: Close each path of the intake device. For example, as Figure 1 shown, close the reference intake valve assembly of the reference intake device (for example, the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0) and close the calibration intake valve assemblies of each path of the calibration intake device (for example, the calibration intake pipeline valves V1, V2,..., Vn), or, as Figure 2 shown, close the reference intake valve assembly of the reference intake device (for example, the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0), close the calibration intake valve assemblies of each path of the calibration intake device (for example, the calibration intake pipeline valves V1, V2,..., Vn), and close the total intake valve Vin.

[0126] Open the exhaust valve assembly 13 in the exhaust device, start the exhaust pump 14, and the gas in the process cavity 10 can be evacuated.

[0127] In some embodiments, the exhaust time can be set, and the exhaust device exhausts according to the exhaust time. After continuously exhausting and reaching the exhaust time, close the exhaust valve assembly and the exhaust pump to stop exhausting. Exemplarily, the exhaust time can be, for example, dozens of seconds or several minutes, such as 30 seconds, 45 seconds, 60 seconds, 75 seconds, 90 seconds, 120 seconds, etc.

[0128] After completing the exhaust and evacuation, close the exhaust valve assembly 13 in the exhaust device and close the exhaust pump 14.

[0129] Next, open the reference intake valve assembly in the reference intake device (e.g., the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0), and use a mass flow controller to control the gas flow to a reference flow value, so that the gas source GS0 in the reference intake device delivers gas to the process chamber 10 through the reference intake pipeline and stabilizes the gas in the process chamber 10 until it is detected that the chamber pressure of the process chamber meets the chamber pressure threshold of the operating conditions, then stop delivering gas and record the reference value of the gas delivery time. Among them, the gas flow unit can be sccm (standard cubic centimeter per minute), and the gas delivery time unit can be minutes or seconds. During the process of delivering gas, keep the temperature in the process chamber always at a set temperature value.

[0130] Exemplarily, use a mass flow controller to control the gas (e.g., N2) to be delivered to the process chamber 10 at a reference flow value (e.g., 1500 sccm). When it is detected that the chamber pressure of the process chamber 10 meets the chamber pressure threshold of the operating conditions, close the reference intake valve assembly in the reference intake device (e.g., the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0) to stop delivering gas. During this gas delivery time, the delivered gas can fill the process chamber 10 and stabilize in the process chamber 10. At this time, record the reference value T1 of the gas delivery time when the chamber pressure threshold is reached.

[0131] Measurement of one path of the calibration intake device to be calibrated: First, put the process chamber in a vacuum state. The specific operation may include the following sub-steps: Close all intake devices. For example, as Figure 1 shown, close the reference intake valve assembly of the reference intake device (e.g., the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0) and close the calibration intake valve assemblies of each path of the calibration intake device (e.g., the calibration intake pipeline valves V1, V2,..., Vn), or, as Figure 2 shown, close the reference intake valve assembly of the reference intake device (e.g., the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0), close the calibration intake valve assemblies of each path of the calibration intake device (e.g., the calibration intake pipeline valves V1, V2,..., Vn), and close the total intake valve Vin.

[0132] If all intake devices have been closed in the steps of measuring the reference intake device mentioned above, the operation of closing all intake devices can be omitted.

[0133] Open the exhaust valve assembly 13 in the exhaust device and start the exhaust pump 14 to evacuate the gas in the process chamber 10.

[0134] In some embodiments, the exhaust time can be set, and the exhaust device exhausts gas according to the exhaust time. After continuous exhaust and reaching the exhaust time, the exhaust valve assembly and the exhaust pump are closed to stop the exhaust. Exemplarily, the exhaust time can be, for example, dozens of seconds or several minutes, such as 30 seconds, 45 seconds, 60 seconds, 75 seconds, 90 seconds, 120 seconds, etc.

[0135] After completing the exhaust and evacuation, close the exhaust valve assembly 13 in the exhaust device and turn off the exhaust pump 14.

[0136] Next, open the calibration intake valve assembly (for example, the calibration intake pipeline valve V1 in the first calibration intake device) in the selected calibration intake device (for example, the first calibration intake device), and the gas source in this calibration intake device conveys gas to the process chamber 10 through the calibration intake pipeline and stabilizes the gas in the process chamber 10 until it is detected that the chamber pressure of the process chamber 10 meets the chamber pressure threshold of the working conditions, then stop conveying gas and record the gas transmission time reference value when reaching the chamber pressure threshold. Among them, during the process of conveying gas, keep the temperature in the process chamber always at a set temperature value.

[0137] Exemplarily, the selected first calibration intake device conveys gas (for example, N2) to the process chamber 10. When it is detected that the chamber pressure of the process chamber 10 meets the chamber pressure threshold of the working conditions, close the calibration intake valve assembly (for example, the calibration intake pipeline valve V1) in the first calibration intake device to stop conveying gas. During this gas transmission time, the conveyed gas can fill the process chamber 10 and stabilize in the process chamber 10. At this time, record the gas transmission time calibration value T2 when reaching the chamber pressure threshold.

[0138] Gas flow rate deviation calculation: According to the obtained gas transmission time reference value and gas transmission time calibration value, calculate the gas transmission time deviation between the two, and the gas transmission time deviation is used as the gas flow rate deviation.

[0139] Exemplarily, using the recorded gas transmission time reference value T1 and gas transmission time calibration value T2, according to the calculation formula: [(T2 - T1) / T1]*100%, calculate the gas transmission time deviation as the gas flow rate deviation.

[0140] Gas flow rate deviation comparison with the deviation threshold range: Compare the calculated gas transmission time deviation with the preset gas transmission time deviation threshold range.

[0141] Exemplarily, the calculated gas transmission time deviation [(T2 - T1) / T1]*100% is compared with the gas transmission time deviation threshold range (e.g., [-a%, +a%] or [-a%, +b%]).

[0142] If the gas transmission time deviation is within the gas transmission time deviation threshold range, it indicates that the gas pressure regulating valve in this calibrated intake device (e.g., the gas pressure regulating valve RV1 in one calibrated intake device) is equivalent to the mass flow controller MFC in the reference intake device in terms of gas flow control.

[0143] If the gas transmission time deviation exceeds the gas transmission time deviation threshold range, adjust the gas pressure regulating valve in this calibrated intake device according to the calculated gas transmission time deviation.

[0144] Exemplarily, taking the gas transmission time deviation threshold range [-a%, +a%] as an example: If the gas transmission time deviation exceeds the lower limit -a% of the cavity pressure deviation threshold range, that is, the gas transmission time calibration value T2 is less than the gas transmission time reference value T1 and the difference is large, it indicates that the gas flow rate of this calibrated intake device is on the high side. Adjust the gas pressure regulating valve in this calibrated intake device, for example, reduce the opening degree of the gas pressure regulating valve to reduce the gas flow rate. If the cavity pressure deviation exceeds the upper limit +a% of the cavity pressure deviation threshold range, that is, the gas transmission time calibration value T2 is greater than the gas transmission time reference value T1 and the difference is large, it indicates that the gas flow rate of this calibrated intake device is on the low side. Adjust the gas pressure regulating valve in this calibrated intake device, for example, increase the opening degree of the gas pressure regulating valve to increase the gas flow rate.

[0145] In some embodiments, gas flow analysis can be performed on the characteristics of the gas pressure regulating valve. For example, for different gases, the gas pressure regulating valve is adjusted to different opening degrees, and the corresponding gas flow rates are recorded. Through gas flow analysis, the gas flow rate distribution curve that the gas pressure regulating valve can control for the target gas within the entire opening degree range can be obtained. In this way, after calculating the cavity pressure deviation, the target opening degree or the adjustment range of the opening degree of the gas pressure regulating valve can be determined according to the gas flow rate distribution curve, and the adjustment can be made accordingly to achieve precise control.

[0146] Subsequently, continue to calculate the gas transmission time calibration value, calculate the gas transmission time deviation, and compare the gas transmission time deviation with the gas transmission time deviation threshold range in the aforementioned calibrated intake device to be calibrated for verification; if the gas transmission time deviation still exceeds the gas transmission time deviation threshold range, then adjust the gas pressure regulating valve and continue the aforementioned operations until the gas transmission time deviation is within the gas transmission time deviation threshold range, so that the gas pressure regulating valve in this calibrated intake device is equivalent to the flow controller in the reference intake device in terms of gas flow control.

[0147] After completing the calibration of the gas pressure regulating valve in this path of the intake device, the next path of the intake device can be selected, and the foregoing calibration method is executed, and so on, until the calibration of the gas pressure regulating valves in all multi-path intake devices is completed.

[0148] Embodiments of the present disclosure also provide a control device. In some embodiments, the control device may be, for example, a host computer, and the host computer is connected to a multi-path intake device, an exhaust device, and the like.

[0149] Please refer to Figure 4 , which shows a schematic block diagram of the control device provided by the present disclosure in an embodiment.

[0150] As Figure 4 shown, the control device 4 includes a processor 41 and a memory 43. Communication can be carried out between the processor 41 and the memory 43 through a bus 42. A calibration program for the intake device may be stored in the memory 43. The processor 41 executes each step in the calibration method of the intake device by running the calibration program of the intake device in the memory 43.

[0151] The bus 42 may be a Peripheral Component Interconnect (PCI) bus, an Extended Industry Standard Architecture (EISA) bus, or the like. The bus can be divided into an address bus, a data bus, a control bus, etc. For the sake of convenience of representation, although only a thick line is used in the figure, it does not mean that there is only one bus or one type of bus.

[0152] In some embodiments, the processor 41 may be implemented as a Central Processing Unit (CPU), a Micro Controller Unit (MCU), a System on Chip (SoC), or a Field Programmable Gate Array (FPGA), etc. The memory 43 may include a volatile memory for temporarily storing data when running a program, such as a Random Access Memory (RAM). The memory 43 may also include a non-volatile memory (Non-Volatile Memory; NVM) for data storage, such as a Read-Only Memory (ROM), a flash memory, a Hard Disk Drive (HDD), or a Solid-State Disk (SSD).

[0153] In practical applications, the control device can be associated with a multi-channel intake device, an exhaust device, etc., and is used to control each component in the intake device and each component in the exhaust device. By setting relevant conditions, the gas supply state of one calibrated intake device to be calibrated is made to approach the gas supply state of the reference intake device, and the gas pressure regulating valve is gradually fine-tuned, so that the gas flow rate generated by the gas pressure regulating valve in the calibrated intake device is the same as or substantially the same as the gas flow rate controlled by the reference intake device, thereby achieving the equivalence of the calibrated intake device and the reference intake device in gas flow control, and thus realizing the equivalence of the gas pressure regulating valve as a flow controller, reducing the usage amount of flow controllers, and effectively reducing costs.

[0154] The embodiments of the present disclosure can also provide a computer-readable storage medium storing a computer program or instructions, and when the computer program or instructions are run, the processes or functions of the calibration method of the intake device in any of the foregoing embodiments are realized.

[0155] That is, the method steps in the above embodiments are implemented as software or computer code that can be stored in a recording medium (such as a CD ROM, RAM, floppy disk, hard disk, or magneto-optical disk), or as computer code that is originally stored in a remote recording medium or a non-transitory machine-readable medium and downloaded through a network and will be stored in a local recording medium, so that the method represented herein can be stored on such a recording medium and processed by software using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or an FPGA).

[0156] The embodiments of the present disclosure can also provide a computer program product including a plurality of computer programs or instructions, and when the plurality of computer programs or instructions are run, all or part of the processes or functions of the calibration method of the intake device in the embodiments of the present disclosure are executed. The computer program product includes a plurality of computer programs or instructions.

[0157] The computer program or instructions can be stored in a readable storage medium, or transmitted from one readable storage medium to another readable storage medium. For example, the computer program or instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center in a wired or wireless manner. The readable storage medium can be any available medium that can be accessed or a data storage device such as a server or a data center integrating a plurality of available media. The available medium can be a magnetic medium, such as a floppy disk, a hard disk, or a magnetic tape; it can also be an optical medium, such as a digital video disc; or it can also be a semiconductor medium, such as a solid-state drive. The computer-readable storage medium can be a volatile or non-volatile storage medium, or can include both volatile and non-volatile types of storage media.

[0158] The above embodiments are only illustrative of the principles and effects of the present disclosure and are not intended to limit the present disclosure. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present disclosure should still be covered by the protection scope of the present disclosure.

Claims

1. A calibration method for an air intake device in a semiconductor process equipment, characterized in that, The semiconductor process equipment includes a process chamber, a multi-channel gas inlet device, and an exhaust device. The multi-channel gas inlet device includes a reference gas inlet device and at least one calibration gas inlet device. The reference gas inlet device includes a reference gas inlet pipeline, a gas source, a flow controller, and a reference gas inlet valve assembly. Each calibration gas inlet device includes a calibration gas inlet pipeline, a gas source, a gas pressure regulator, and a calibration gas inlet valve assembly. The exhaust device includes an exhaust pipeline and an exhaust pump and an exhaust valve assembly provided on the exhaust pipeline; the calibration method of the gas inlet device includes the following steps: Supplying gas by the reference gas inlet device: In the case where the process chamber is in a vacuum state, open the reference gas inlet valve assembly in the reference gas inlet device, and use the flow controller to control the gas flow to a reference flow value, so that the gas source in the reference gas inlet device supplies gas to the process chamber through the reference gas inlet pipeline, and obtain a parameter reference value that meets the working conditions; wherein, when the process chamber is in a vacuum state, the reference gas inlet valve assembly in the reference gas inlet device and the calibration gas inlet valve assemblies in each calibration gas inlet device are all closed, and the exhaust valve assembly in the exhaust device is closed; Supplying gas by the calibration gas inlet device: In the case where the process chamber is in a vacuum state, open the calibration gas inlet valve assembly in a selected calibration gas inlet device, and the gas source in this calibration gas inlet device supplies gas to the process chamber through the calibration gas inlet pipeline, and obtain a parameter calibration value that meets the working conditions; wherein the parameter is the chamber pressure of the process chamber or the gas supply time. Calculating the gas flow deviation: According to the obtained parameter reference value and parameter calibration value, calculate the parameter deviation between the two, and use the parameter deviation as the gas flow deviation. Adjusting the gas pressure regulator, compare the gas flow deviation with the deviation threshold range, and when the gas flow deviation exceeds the deviation threshold range, adjust the gas pressure regulator in this calibration gas inlet device. Repeat the above steps of supplying gas by the calibration gas inlet device, calculating the gas flow deviation, and adjusting the gas pressure regulator until the gas flow deviation is within the deviation threshold range, and complete the calibration of this calibration gas inlet device.

2. The calibration method of the air intake device in the semiconductor process equipment according to claim 1, characterized in that, The step of putting the process chamber in a vacuum state includes: closing the reference gas inlet valve assembly in the reference gas inlet device and the calibration gas inlet valve assemblies in all calibration gas inlet devices, opening the exhaust valve assembly in the exhaust device, and starting the exhaust pump, so that the gas in the process chamber is exhausted through the exhaust pipeline until the process chamber reaches a vacuum.

3. The calibration method of the intake device in the semiconductor process equipment according to claim 1, wherein, The parameter is the chamber pressure of the process chamber, the working condition is to supply gas within a set gas supply time threshold, and the gas flow deviation is the chamber pressure deviation. The step of calculating the chamber pressure deviation of the process chamber includes: In the reference gas inlet device, supply gas to the process chamber through the reference gas inlet pipeline according to the reference flow value set by the flow controller, and stop supplying gas when the gas supply time meets the gas supply time threshold of the working conditions, and obtain the chamber pressure reference value corresponding to the gas supply time in the process chamber; In a selected one of the calibrated intake devices, gas is transported to the process chamber through the calibrated intake pipeline. When the gas transportation time meets the gas transportation time threshold of the working condition, the gas transportation is stopped, and the calibrated value of the chamber pressure corresponding to the gas transportation time in the process chamber is obtained; and According to the obtained reference value of the chamber pressure and the calibrated value of the chamber pressure, calculate the deviation of the chamber pressure of the process chamber as the deviation of the gas flow rate; wherein, the deviation of the chamber pressure is the ratio of the difference between the calibrated value of the chamber pressure and the reference value of the chamber pressure to the reference value of the chamber pressure.

4. The calibration method of the intake device in the semiconductor process equipment according to claim 1, characterized in that, The parameter is the gas transportation time, the working condition is that the gas transportation reaches the set chamber pressure threshold, and the deviation of the gas flow rate is the deviation of the gas transportation time; The steps of calculating the deviation of the gas transportation time include: In the reference intake device, according to the reference flow rate value set by the flow controller, gas is transported to the process chamber through the reference intake pipeline. When it is detected that the chamber pressure of the process chamber meets the chamber pressure threshold of the working condition, the gas transportation is stopped, and the reference value of the gas transportation time corresponding to the chamber pressure is obtained; In a selected one of the calibrated intake devices, gas is transported to the process chamber through the calibrated intake pipeline. When it is detected that the chamber pressure of the process chamber meets the chamber pressure threshold of the working condition, the gas transportation is stopped, and the calibrated value of the gas transportation time corresponding to the chamber pressure is obtained; and According to the obtained reference value of the gas transportation time and the calibrated value of the gas transportation time, calculate the deviation of the gas transportation time as the deviation of the gas flow rate; wherein, the deviation of the gas transportation time is the ratio of the difference between the calibrated value of the gas transportation time and the reference value of the gas transportation time to the reference value of the gas transportation time.

5. The calibration method of the intake device in the semiconductor process equipment according to claim 1, characterized in that, During the process of transporting gas to the process chamber through the reference intake pipeline or during the process of transporting gas to the process chamber through the calibrated intake pipeline, the temperature in the process chamber remains stable.

6. The calibration method of the intake device in the semiconductor process equipment according to claim 1, characterized in that, When the deviation of the gas flow rate exceeds the deviation threshold range, adjust the gas pressure regulating valve in this calibrated intake device, including: When the deviation of the gas flow rate exceeds the deviation threshold range, if it is determined that the gas flow rate of the gas transported in the calibrated intake device is less than the gas flow rate of the gas transported in the reference intake device, increase the opening degree of the gas pressure regulating valve to increase the gas flow rate; and When the deviation of the gas flow rate exceeds the deviation threshold range, if it is determined that the gas flow rate of the gas transported in the calibrated intake device is greater than the gas flow rate of the gas transported in the reference intake device, decrease the opening degree of the gas pressure regulating valve to decrease the gas flow rate.

7. A semiconductor processing apparatus, characterized in that, Include: A process chamber, a multi-channel intake device, and an exhaust device. The multi-channel intake device includes one reference intake device and at least one calibrated intake device. The reference intake device includes a reference intake pipeline, a gas source, a flow controller, and a reference intake valve assembly. Each calibrated intake device includes a calibrated intake pipeline, a gas source, a gas pressure regulating valve, and a calibrated intake valve assembly. The exhaust device includes an exhaust pipeline and an exhaust pump and an exhaust valve assembly provided on the exhaust pipeline; wherein, the gas pressure regulating valve in the calibrated intake device is realized by using the calibration method of the intake device in the semiconductor process equipment as described in any one of claims 1 to 6.

8. The semiconductor process equipment according to claim 7, wherein, The reference intake valve assembly includes a gas source valve corresponding to a gas source and a control valve corresponding to a flow controller, and the calibration intake valve assembly includes a calibration intake pipeline valve corresponding to a gas pressure regulator.

9. A control device, characterized in that, Comprising: A processor; A memory storing a calibration program for the intake device; Wherein, when the calibration program of the intake device is run by the processor, it executes the calibration method of the intake device in the semiconductor process equipment according to any one of claims 1 to 6.

10. A computer-readable storage medium storing a calibration program for an intake device, characterized in that, When the calibration program of the intake device is executed by the processor, it implements the calibration method of the intake device in the semiconductor process equipment according to any one of claims 1 to 6.

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