Temperature setting device applied to wafer processing technology and production equipment

Abstract

The invention provides a temperature setting device applied to a wafer processing technology and production equipment. The temperature setting device applied to the wafer processing technology comprises at least one vortex tube. The vortex tube comprises a fluid inlet, a high-temperature fluid outlet, a low-temperature fluid outlet, a low-temperature flow channel formed between the fluid inlet and the low-temperature fluid outlet, and a high-temperature flow channel formed between the fluid inlet and the high-temperature fluid outlet. And the low-temperature fluid outlet is used for being communicated with a cooling cavity for accommodating the processed wafer and / or forming heat release to a heating runner in a heating table for bearing the to-be-processed wafer. And the high-temperature fluid outlet is used for forming heat release to a heating runner in a heating table for bearing the wafer to be processed. The production equipment comprises the temperature setting device applied to the wafer processing technology. The separated low-temperature fluid is guided into the cooling cavity to cool the processed wafer; and the separated high-temperature fluid is guided into the heating flow channel to provide heat for wafer processing.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a temperature setting device and a production apparatus applied to a wafer processing process. Background Art

[0002] A wafer refers to a silicon wafer used for fabricating silicon semiconductor circuits, and its raw material is silicon. When processing a wafer, heat needs to be compensated because many etchants need to react effectively with substances on the wafer surface under certain temperature conditions. However, after wafer processing, cooling is required to cool the wafer to a predetermined temperature for subsequent steps. In related technologies, heating and cooling of the wafer are implemented by different devices respectively. For example, additional heat is provided by a heating plate or by supplying a heating medium to a heating channel in a wafer processing table to intensify the thermal motion of etchant molecules, thereby increasing the reaction rate with the material on the wafer surface; then the wafer is cooled by a fan or natural cooling. This method is not only inefficient but also increases the equipment cost in wafer processing. Therefore, the present application aims to provide a device that can solve the above problems. Summary of the Invention

[0003] In view of the above-mentioned disadvantages of the prior art, an object of the present disclosure is to provide a temperature setting device and a production apparatus applied to a wafer processing process to solve the problems in related technologies.

[0004] A first aspect of the present disclosure provides a temperature setting device applied to a wafer processing process, including: At least one vortex tube, including a fluid inlet, a high-temperature fluid outlet, and a low-temperature fluid outlet, a low-temperature flow channel formed between the fluid inlet and the low-temperature fluid outlet, and a high-temperature flow channel formed between the fluid inlet and the high-temperature fluid outlet; The low-temperature fluid outlet is configured to communicate with a cooling chamber for accommodating the processed wafer and / or is disposed to release heat to a heating channel in a heating table for carrying the wafer to be processed; The high-temperature fluid outlet is disposed to release heat to a heating channel in a heating table for carrying the wafer to be processed; The high-temperature fluid outlet communicates with an injection port of the heating channel; A collection assembly, including a collection component and a pressurization component connected in communication; a first collection port of the collection component communicates with the cooling chamber, a second collection port communicates with an outlet of the heating channel; an emission port of the pressurization component communicates with the fluid inlet.

[0005] In an embodiment of the first aspect, a first pipeline is provided at the low-temperature fluid outlet, and a first valve body is provided on the first pipeline; a second pipeline is provided at the high-temperature fluid outlet, and a second valve body is provided on the second pipeline; wherein, the first pipeline and the second pipeline are connected in parallel and then communicated with the injection port of the heating flow channel; the opening degrees of the first valve body and the second valve body are adjustable to control the temperature of the medium flowing into the heating flow channel.

[0006] In an embodiment of the first aspect, the high-temperature fluid outlet is communicated with a heat exchange device; the pipeline communicating with the injection port of the heating flow channel is arranged close to the heat exchange device to receive the heat released by the heat exchange device.

[0007] In an embodiment of the first aspect, a collection assembly is further included; the collection assembly includes a collection component and a pressurization component connected in communication; a first collection port of the collection component is communicated with the cooling cavity, a second collection port of the collection component is communicated with the heat exchange device, and a discharge port of the pressurization component is communicated with the fluid inlet.

[0008] In an embodiment of the first aspect, an annular support plate for supporting the processed wafer is provided in the cooling cavity; the annular support plate divides the cooling cavity into an upper cavity and a lower cavity; the low-temperature fluid outlet is communicated with the upper cavity and the lower cavity respectively to cool the upper surface and the lower surface of the processed wafer respectively.

[0009] In an embodiment of the first aspect, the heating flow channels are implemented as multiple; the multiple heating flow channels are configured to be able to cover the bearing surface of the heating table; the low-temperature fluid outlet and / or the high-temperature fluid outlet of the at least one vortex tube are arranged to release heat to the multiple heating flow channels in the heating table for carrying the wafer to be processed.

[0010] In an embodiment of the first aspect, the vortex tubes are implemented as multiple; the heating flow channels on the heating table are implemented as multiple; the multiple high-temperature fluid outlets are arranged to release heat to the multiple heating flow channels in the heating table for carrying the wafer to be processed; the multiple low-temperature fluid outlets are uniformly distributed and communicated with the cooling cavity.

[0011] A second aspect of the present disclosure provides a production device, including a temperature setting device applied to a wafer processing process.

[0012] As described above, embodiments of the present disclosure provide a temperature setting device and a production device applied to a wafer processing process. The temperature setting device applied to the wafer processing process includes at least one vortex tube. The vortex tube includes a fluid inlet, a high-temperature fluid outlet, and a low-temperature fluid outlet, a low-temperature flow channel formed between the fluid inlet and the low-temperature fluid outlet, and a high-temperature flow channel formed between the fluid inlet and the high-temperature fluid outlet. The low-temperature fluid outlet is communicatively connected to a cooling chamber for accommodating a processed wafer and / or is disposed to release heat to a heating flow channel in a heating stage for carrying a wafer to be processed. The high-temperature fluid outlet is disposed to release heat to a heating flow channel in a heating stage for carrying a wafer to be processed. The production device includes the temperature setting device applied to the wafer processing process. The advantage of the above arrangement is that the vortex tube can not only guide the separated low-temperature fluid into the cooling chamber to cool the processed wafer, thereby improving the cooling efficiency of the wafer, but also guide the separated high-temperature fluid into the heating flow channel of the heating stage to provide heat for wafer processing, thereby improving the utilization rate of the fluid flowing out of the vortex tube by avoiding fluid waste. Description of the Drawings

[0013] Figure 1 FIG. shows a schematic structural diagram of the overall structure of an embodiment of the present disclosure;

[0014] Figure 2 FIG. shows a schematic structural diagram of an embodiment in which both fluid outlets of an embodiment of the present disclosure are communicatively connected to a heating channel;

[0015] Figure 3 FIG. shows a schematic structural diagram of an embodiment of the present disclosure including a collection component;

[0016] Figure 4 FIG. shows a schematic structural diagram of another embodiment of the collection component;

[0017] Figure 5 FIG. shows a schematic structural diagram of another embodiment in which the low-temperature fluid outlet is communicatively connected to the cooling chamber;

[0018] Figure 6 FIG. shows a schematic structural diagram of an embodiment in which the heating flow channel is implemented as multiple;

[0019] Figure 7 FIG. shows a layout diagram of multiple heating flow channels;

[0020] Figure 8 FIG. shows a layout diagram of another embodiment of multiple flow channels.

[0021] Reference Numerals:

[0022] 10. Vortex tube; 101. Fluid inlet; 102. High-temperature fluid outlet; 1021. Second pipeline; 1022. Second valve body; 103. Low-temperature fluid outlet; 1031. First pipeline; 1032. First valve body;

[0023] 20. Cooling chamber; 21. Annular supporting plate; 201. Upper chamber; 202. Lower chamber;

[0024] 30. Heating table; 301. Heating flow channel; 31. Heating pipeline; 311. Third valve body;

[0025] 40. Collection assembly; 41. Collection component; 411. Heating element; 42. Pressurizing component;

[0026] 50. Heat exchange device. Detailed implementation mode

[0027] The following uses specific specific examples to illustrate the implementation modes of the present disclosure. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed in the present disclosure. The present disclosure can also be implemented or applied through other different specific implementation modes. Various details in the present disclosure can also be modified or changed according to different viewpoints and application modes without departing from the spirit of the present disclosure. It should be noted that, without conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0028] The following takes the attached drawings as a reference and details the embodiments of the present disclosure so that those skilled in the art to which the present disclosure pertains can easily implement it. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0029] In the description of the present disclosure, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics represented in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials, or characteristics represented can be combined in a suitable manner in any one or a group of embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples represented in the present disclosure and the features of different embodiments or examples.

[0030] In addition, the terms "first" and "second" are only used for indicating purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "a group" is two or more unless otherwise specifically defined.

[0031] To clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same or similar constituent elements throughout the specification are given the same reference signs.

[0032] Throughout the specification, when it is said that a device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" with other elements placed therebetween. In addition, when it is said that a certain device "includes" a certain constituent element, unless there is a particularly contrary record, it does not exclude other constituent elements, but means that other constituent elements may also be included.

[0033] Although in some examples the terms first, second, etc. are used herein to denote various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first interface and the second interface, etc. are indicated. Furthermore, as used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context indicates otherwise. It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, modules, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or a group of other features, steps, operations, elements, modules, items, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or meaning either one or any combination. Thus, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A, B and C". An exception to this definition only occurs when the combination of elements, functions, steps or operations are mutually exclusive in some way.

[0034] The technical terms used herein are only for referring to specific embodiments and are not intended to limit the present disclosure. The singular forms used herein also include the plural forms as long as the statement does not clearly indicate the contrary meaning. The meaning of "including" used in the specification is to embody specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0035] Although not defined differently, all terms, including the technical terms and scientific terms used herein, have the same meaning as generally understood by those skilled in the technical field to which the present disclosure pertains. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with the relevant technical literature and the currently presented information, and should not be over-interpreted as ideal or very formulaic meanings as long as they are not defined.

[0036] A wafer refers to a silicon wafer used to fabricate silicon semiconductor circuits, and its raw material is silicon. When processing the wafer, heat needs to be compensated because many etchants can react effectively with substances on the wafer surface only under certain temperature conditions. However, after the wafer is processed, it needs to be cooled to a predetermined temperature to facilitate subsequent steps. In related technologies, the heating and cooling of the wafer are implemented by different devices respectively. For example, additional heat is provided by a heating plate or by supplying a heating medium to a heating channel in the wafer processing table, which intensifies the thermal motion of etchant molecules, thereby increasing the reaction rate between the etchant and the material on the wafer surface. Then, the wafer is cooled by a fan or natural cooling. This method not only has low efficiency but also increases the equipment cost in wafer processing.

[0037] Based on the above problems, in the embodiments of the present disclosure, the vortex tube can not only guide the separated low-temperature fluid to the cooling cavity to cool the processed wafer, so as to improve the cooling efficiency of the wafer. It can also guide the separated high-temperature fluid into the heating channel of the heating table to provide heat for wafer processing, thereby avoiding waste of fluid, improving the utilization rate of the fluid flowing out of the vortex tube, improving the heating and cooling efficiency of the wafer, and reducing the economic cost at the same time.

[0038] Figure 1 Shown is a schematic structural diagram of the overall structure of the embodiments of the present disclosure. Figure 2 Shown is a schematic structural diagram in which both fluid outlets in the embodiments of the present disclosure are connected to the heating channel 301. In Figure 1 and Figure 2 In the example, the temperature setting device applied to the wafer processing process includes at least one vortex tube 10. The vortex tube 10 includes a fluid inlet 101, a high-temperature fluid outlet 102, and a low-temperature fluid outlet 103, a low-temperature channel formed between the fluid inlet 101 and the low-temperature fluid outlet 103, and a high-temperature channel formed between the fluid inlet 101 and the high-temperature fluid outlet 102. The low-temperature fluid outlet 103 is provided to communicate with the cooling cavity 20 for accommodating the processed wafer and / or is arranged to release heat to the heating channel 301 in the heating table 30 for carrying the wafer to be processed. The high-temperature fluid outlet 102 is provided to release heat to the heating channel 301 in the heating table 30 for carrying the wafer to be processed.

[0039] The advantage of the above setting is that the vortex tube 10 can not only guide the separated low-temperature fluid into the cooling cavity 20 to cool the processed wafer, so as to improve the cooling efficiency of the wafer. It can also guide the separated high-temperature fluid into the heating channel 301 of the heating table 30 to provide heat for wafer processing, thereby avoiding waste of fluid, improving the utilization rate of the fluid flowing out of the vortex tube 10, improving the heating and cooling efficiency of the wafer, and reducing the economic cost at the same time.

[0040] Exemplarily, the fluid flowing through the fluid inlet 101 can be implemented as a liquid or a gas.

[0041] In Figure 1 the example, the low-temperature fluid outlet 103 is only connected to the cooling chamber 20, and the high-temperature fluid outlet 102 is directly connected to the heating flow channel 301 of the heating stage 30. For example, the low-temperature fluid outlet 103 is connected to the cooling chamber 20 through a pipeline, and the high-temperature fluid outlet 102 is directly connected to the heating flow channel 301 of the heating stage 30 through a pipeline.

[0042] In another embodiment, a pressure reducing device (not shown in the figure), such as a pressure reducing valve, is provided on the pipeline, so as to reduce the pressure of the fluid entering the cooling chamber 20 and the heating flow channel 301, and avoid the situation that the heating stage 30 or the processed wafer is damaged due to too high fluid pressure.

[0043] In Figure 2 the example, the low-temperature fluid outlet 103 is not only connected to the cooling chamber 20, but also connected to the heating flow channel 301 of the heating stage 30. The high-temperature fluid outlet 102 is also connected to the heating flow channel 301 of the heating stage 30. Exemplarily, the low-temperature fluid outlet 103 is provided with a first pipeline 1031, and a first valve body 1032 is provided on the first pipeline 1031; the high-temperature fluid outlet 102 is provided with a second pipeline 1021, and a second valve body 1022 is provided on the second pipeline 1021; wherein, the first pipeline 1031 and the second pipeline 1021 are connected in parallel and then connected to the injection port of the heating flow channel 301; the opening degrees of the first valve body 1032 and the second valve body 1022 are adjustable to control the temperature of the medium flowing into the heating flow channel 301.

[0044] It can be understood that the temperature of the mixed fluid flowing into the heating flow channel 301 is adjusted by respectively adjusting the opening degrees of the first valve body 1032 and the second valve body 1022, so that the heating flow channel 301 can heat the heating stage 30 to a predetermined temperature.

[0045] It can be understood that the high-temperature fluid flowing into the heating flow channel 301 can be implemented as low-temperature heating, clean environment heating and auxiliary heating.

[0046] Exemplarily, the first pipeline 1031 and the second pipeline 1021 can also be first connected to a mixing container (not shown in the figure), and then the mixing container is connected to the heating flow channel 301 of the heating stage 30.

[0047] Further exemplarily, both the first valve body 1032 and the second valve body 1022 are implemented as check valves. Those skilled in the art can understand that the first valve body 1032 only allows the medium flowing out of the low-temperature fluid outlet 103 to flow into the heating flow channel 301, while restricting the fluid in the heating flow channel 301 from flowing towards the low-temperature fluid outlet 103. The second valve body 1022 only allows the medium flowing out of the high-temperature fluid outlet 102 to flow into the heating flow channel 301, while restricting the fluid in the heating flow channel 301 from flowing towards the high-temperature fluid outlet 102.

[0048] It can be understood that when the heating stage 30 only needs to be heated, the first valve body 1032 can be closed and the second valve body 1022 can be opened, allowing only the medium flowing out of the high-temperature fluid outlet 102 to enter the heating flow channel 301. When the heating stage 30 only needs to be cooled, the second valve body 1022 can be closed and the first valve body 1032 can be opened, allowing only the medium flowing out of the low-temperature fluid outlet 103 to enter the heating flow channel 301.

[0049] Figure 3 Shown in the figure is a schematic structural diagram of an embodiment of the present disclosure including a collection assembly 40. In Figure 3 In an example, the temperature setting device applied to the wafer processing process further includes a collection assembly 40. The collection assembly 40 includes a collection component 41 and a pressurization component 42 that are connected in communication. The first collection port of the collection component 41 is connected in communication with the cooling chamber 20, and the second collection port is connected in communication with the discharge port of the heating flow channel 301; the discharge port of the pressurization component 42 is connected in communication with the fluid inlet 101.

[0050] Exemplarily, the pressurization component 42 is implemented as a booster pump. Those skilled in the art can understand that the booster pump can pressurize the fluid collected by the collection component 41 to a predetermined pressure and then re-flow it into the fluid inlet 101.

[0051] Exemplarily, the collection component 41 is implemented as a collection bin. Suction pumps are provided between the first collection port of the collection component 41 and the cooling chamber 20, and between the second collection port and the discharge port of the heating flow channel 301 to improve the efficiency of fluid recovery.

[0052] Those skilled in the art can understand that the low-temperature fluid flowing in through the first collection port and the high-temperature fluid flowing in through the second collection port are mixed after entering the collection component 41 to neutralize the temperatures of the two, avoiding the fluid re-entering the vortex tube 10 from having too high or too low a temperature.

[0053] Exemplarily, a temperature sensor (not shown in the figure) is provided in the collecting component 41. It can be understood that when the temperature of the fluid mixed in the collecting component 41 reaches the temperature at which it can enter the vortex tube 10, the pressurizing component 42 pressurizes the mixed fluid and directly injects it into the vortex tube 10. In other embodiments, the temperature sensor can also be provided in the pressurizing component 42. When the temperature of the mixed fluid after being pressurized by the pressurizing component 42 reaches the temperature at which it can enter the vortex tube 10, the pressurizing component 42 pressurizes the mixed fluid and directly injects it into the vortex tube 10.

[0054] Exemplarily, a heating element 411 is provided in the collecting component 41 to heat the fluid in the collecting component 41 to a predetermined temperature. For example, when the heating stage 30 only needs to be cooled, the second valve body 1022 is closed and the first valve body 1032 is in the open state. At this time, the fluids entering the collecting component 41 through the first collecting port and the second collecting port are both low-temperature fluids. Therefore, it is necessary to heat the fluid in the collecting component 41 to meet the condition of being able to enter the vortex tube 10.

[0055] Figure 4 Shown is a schematic structural diagram of another embodiment of the collecting assembly and the heat exchange device. In Figure 4 the example, the high-temperature fluid outlet 102 is connected to a heat exchange device 50; the heating pipeline 31 connecting the injection port of the heating flow channel 301 is arranged close to the heat exchange device 50 to receive the heat released by the heat exchange device 50. It can be understood that the heating pipeline 31 for supplying the heating medium to the heating flow channel 301 is separately arranged, and the heat exchange device 50 only heats the heating pipeline 31 and is not connected to the heating pipeline 31.

[0056] Exemplarily, the heat exchange mode between the heating pipeline 31 and the heat exchange device 50 is implemented as a contact type or a non-contact type.

[0057] When the heat exchange mode between the heating pipeline 31 and the heat exchange device 50 is implemented as a non-contact type, the distance between the heating pipeline 31 and the heat exchange device 50 is adjustable. It can be understood that the temperature of the heating medium in the heating pipeline 31 after change can be adjusted by adjusting the heat released by the heat exchange device 50 to the heating pipeline 31. For example, the heat exchange device 50 is implemented as an annular heating box (not shown in the figure). The interior of the heating box accommodates the high-temperature fluid flowing in from the high-temperature fluid outlet 102, and the heating pipeline 31 is coaxially arranged with the annular heating box in the hollow area of the annular heating box.

[0058] In other embodiments, the cooling method of the low-temperature fluid outlet 103 for the cooling cavity 20 may also be implemented as the heat exchange method of the high-temperature fluid outlet for the heating stage 30, and is not limited thereto.

[0059] When the heat exchange method between the heating pipeline 31 and the heat exchange device 50 is implemented as a contact type, for example, the heat exchange method between the heat exchange device 50 and the heating pipeline 31 is implemented as water bath heating.

[0060] In Figure 4 the embodiment, the temperature setting device applied to the wafer processing technology further includes a collection component 40. The collection component 40 includes a collection part 41 and a pressurizing part 42 which are connected in communication; a first collection port of the collection part 41 is communicated with the cooling cavity 20, a second collection port of the collection part 41 is communicated with the heat exchange device 50, and a discharge port of the pressurizing part 42 is communicated with the fluid inlet 101.

[0061] In Figure 4 the example, the low-temperature fluid outlet 103 is directly communicated with the heating flow channel 301. Exemplarily, the low-temperature fluid outlet 103 is provided with a first pipeline 1031, a first valve body 1032 is arranged on the first pipeline 1031, and a third valve body 311 is arranged on the heating pipeline 31. Preferably, the third valve body 311 is close to the heating flow channel 301 on the heating pipeline 31. The adjustment methods of the first valve body 1032 and the third valve body 311 are the same as those of Figure 2 the first valve body 1032 and the third valve body 311 in the example, so details are not described herein.

[0062] In Figure 4 the example, a heating element 411 is also arranged in the collection part 41, and its function is the same as the above content, so details are not described herein.

[0063] Figure 5 Shown in is a schematic structural diagram of another embodiment in which the low-temperature fluid outlet 103 is communicated with the cooling cavity 20. In Figure 5 the example, an annular support plate for supporting the processed wafer is arranged in the cooling cavity 20; the annular support plate divides the cooling cavity 20 into an upper cavity 201 and a lower cavity 202; the low-temperature fluid outlet 103 is respectively communicated with the upper cavity 201 and the lower cavity 202 to cool the upper surface and the lower surface of the processed wafer respectively. For example, the low-temperature fluid outlet 103 is provided with a three-way joint. The advantage of the above setting is that by cooling the upper surface and the lower surface of the wafer simultaneously, the deformation of the wafer caused by uneven heat and cold distribution can be avoided, thereby improving the qualified rate of wafer production.

[0064] Exemplarily, the vortex tube 10 is implemented as multiple; the heating flow channels 301 on the heating stage 30 are implemented as multiple; the multiple high-temperature fluid outlets 102 are arranged to form heat release to the multiple heating flow channels 301 in the heating stage 30 for carrying the wafer to be processed; the multiple low-temperature fluid outlets 103 are uniformly distributed and communicated with the cooling cavity 20.

[0065] Those skilled in the art can understand that when the flow rate of one vortex tube 10 cannot meet the requirements of multiple cooling cavities 20 and heating stages 30, the vortex tube 10 can be implemented as multiple, so as to realize that multiple vortex tubes 10 are correspondingly communicated with multiple cooling cavities 20 and multiple heating stages 30. Or, when the flow rate of one vortex tube 10 is greater than the requirements of multiple cooling cavities 20 and heating stages 30, one vortex tube 10 can be correspondingly communicated with multiple cooling cavities 20 and multiple heating stages 30.

[0066] Figure 6 The structural schematic diagram in which the heating flow channels 301 are implemented as multiple is shown. In Figure 6 the example, the heating flow channels 301 are implemented as multiple. The multiple heating flow channels 301 are configured to be able to cover the bearing surface of the heating stage 30; the low-temperature fluid outlet 103 and / or high-temperature fluid outlet 102 of the at least one vortex tube 10 are arranged to form heat release to the multiple heating flow channels 301 in the heating stage 30 for carrying the wafer to be processed.

[0067] Figure 7 The layout schematic diagram of multiple heating flow channels 301 is shown. Figure 8 The layout schematic diagram of another embodiment of multiple flow channels is shown. From Figure 7 and Figure 8 the example, according to the actual production requirements, the heating flow channels 301 on the heating stage 30 can be selected.

[0068] Another embodiment of the present disclosure provides a production device, including the temperature setting device applied to the wafer processing process.

[0069] In summary, the embodiments of the present disclosure provide a temperature setting device and a production device applied to a wafer processing process. The temperature setting device applied to the wafer processing process includes at least one vortex tube. The vortex tube includes a fluid inlet, a high-temperature fluid outlet, and a low-temperature fluid outlet, a low-temperature flow channel formed between the fluid inlet and the low-temperature fluid outlet, and a high-temperature flow channel formed between the fluid inlet and the high-temperature fluid outlet. The low-temperature fluid outlet is communicatively connected to a cooling chamber for accommodating the processed wafer and / or is arranged to release heat to a heating flow channel in a heating stage for carrying the wafer to be processed. The high-temperature fluid outlet is arranged to release heat to a heating flow channel in a heating stage for carrying the wafer to be processed. The production device includes the temperature setting device applied to the wafer processing process. The advantage of the above arrangement is that the vortex tube can not only guide the separated low-temperature fluid into the cooling chamber to cool the processed wafer, so as to improve the cooling efficiency of the wafer. It can also guide the separated high-temperature fluid into the heating flow channel of the heating stage to provide heat for wafer processing, thereby improving the utilization rate of the fluid flowing out of the vortex tube by avoiding waste of the fluid.

[0070] The above embodiments are only illustrative of the principles and effects of the present disclosure, and are not intended to limit the present disclosure. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present disclosure should still be covered by the protection scope of the present disclosure.

Claims

1. A temperature setting device applied to a wafer processing technology, characterized in that, Comprising: At least one vortex tube, including a fluid inlet, a high-temperature fluid outlet, and a low-temperature fluid outlet, a low-temperature flow channel formed between the fluid inlet and the low-temperature fluid outlet, and a high-temperature flow channel formed between the fluid inlet and the high-temperature fluid outlet; The low-temperature fluid outlet is provided for communicating with a cooling cavity for accommodating a processed wafer and / or is arranged to release heat to a heating flow channel in a heating stage for carrying a wafer to be processed; The high-temperature fluid outlet is provided for releasing heat to a heating flow channel in a heating stage for carrying a wafer to be processed; The high-temperature fluid outlet communicates with an injection port of the heating flow channel; A collection assembly, including a collection component and a pressurization component connected in communication; a first collection port of the collection component communicates with the cooling cavity, and a second collection port of the collection component communicates with a discharge port of the heating flow channel; a discharge port of the pressurization component communicates with the fluid inlet.

2. The temperature setting device applied to the wafer processing technology according to claim 1, characterized in that The low-temperature fluid outlet is provided with a first pipeline, and a first valve body is arranged on the first pipeline; the high-temperature fluid outlet is provided with a second pipeline, and a second valve body is arranged on the second pipeline; wherein, the first pipeline and the second pipeline are connected in parallel and then communicate with the injection port of the heating flow channel; the opening degrees of the first valve body and the second valve body are adjustable to control the temperature of the medium flowing into the heating flow channel.

3. The temperature setting device applied to the wafer processing technology according to claim 1, characterized in that, The high-temperature fluid outlet communicates with a heat exchange device; the pipeline communicating with the injection port of the heating flow channel is arranged close to the heat exchange device to receive the heat released by the heat exchange device.

4. The temperature setting device applied to the wafer processing technology according to claim 3, characterized in that, It further includes a collection assembly; the collection assembly includes a collection component and a pressurization component connected in communication; a first collection port of the collection component communicates with the cooling cavity, a second collection port of the collection component communicates with the heat exchange device, and a discharge port of the pressurization component communicates with the fluid inlet.

5. The temperature setting device applied to the wafer processing technology according to claim 1, characterized in that, An annular support plate for supporting the processed wafer is arranged in the cooling cavity; the annular support plate divides the cooling cavity into an upper cavity and a lower cavity; the low-temperature fluid outlet communicates with the upper cavity and the lower cavity respectively to cool the upper surface and the lower surface of the processed wafer respectively.

6. The temperature setting device applied to the wafer processing technology according to claim 1, wherein The heating flow channels are implemented as multiple; the multiple heating flow channels are configured to be able to cover the bearing surface of the heating stage; the low-temperature fluid outlet and / or the high-temperature fluid outlet of the at least one vortex tube are arranged to release heat to the multiple heating flow channels in the heating stage for carrying a wafer to be processed.

7. The temperature setting device applied to the wafer processing technology according to claim 1, characterized in that, The vortex tubes are implemented as multiple; the heating flow channels on the heating stage are implemented as multiple; the multiple high-temperature fluid outlets are provided for releasing heat to the multiple heating flow channels in the heating stage for carrying a wafer to be processed; the multiple low-temperature fluid outlets are uniformly distributed and communicate with the cooling cavity.

8. A production device, characterized in that, Comprising: The temperature setting device applied to the wafer processing process according to any one of claims 1-7.

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