Power amplifier applied to satellite-borne communication chip

Abstract

The invention belongs to the technical field of integrated circuits, and particularly relates to a power amplifier applied to a satellite-borne wireless communication system. The circuit structure of the power amplifier comprises an anti-radiation power amplifier core circuit, a power detection circuit, an analog-to-digital converter and a control module circuit, an input signal is input to the anti-irradiation power amplifier core circuit, and an output signal is generated and output to the power detection circuit. The power detection circuit processes the received signal, outputs a processing result to the analog-to-digital converter, receives an instruction of the control module circuit and generates an output signal of the whole circuit; the analog-to-digital converter converts a processing result output by the power detection circuit into a digital signal and outputs the digital signal to the control module circuit; the control module circuit judges according to the input digital signal, generates a control signal for controlling the working mode of the anti-radiation power amplifier core circuit, and generates a control signal for controlling the power detection circuit and the analog-to-digital converter; the radiation-proof power amplifier core circuit is composed of two identical power amplifiers and four numerical control single-pole double-throw switches. Switching of the four power amplifier circuits is controlled by a numerical control single-pole double-throw switch, and by means of the structure, the circuit failure probability caused by space irradiation can be remarkably reduced, and the anti-irradiation performance and stability of the circuits are improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated circuits, and particularly relates to a power amplifier. Background Art

[0002] A power amplifier is an important component of a phased array transceiver system, and its function is to amplify the power of the information-rich signal obtained by modulation, so as to facilitate subsequent transmission through an antenna, thereby completing the transmission and communication of wireless signals. Therefore, the performance of the power amplifier is crucial to the performance of the overall radio frequency communication system.

[0003] The main performance parameters of a radio frequency power amplifier include saturated output power, power added efficiency, DC power consumption, drain efficiency, linearity, power compression point, etc. An architecture that distributes the input signal, amplifies it by multiple power amplifiers, and combines the power outputs can achieve a higher saturated output power, thereby better balancing the trade-off between output power, bandwidth, and efficiency, and is increasingly used in current broadband radio frequency transceiver systems.

[0004] Currently, the increasingly extensive communication application fields have put forward more requirements for phased array transceiver systems and power amplifier circuits. In the aerospace field, the working environment of spaceborne chips is the space with strong radiation. The circuit modules in the chips are affected by radiation, having a higher failure probability and a shorter expected lifespan. Therefore, it is imperative to pay attention to the special working environment of spaceborne chips in the aerospace field, study chip anti-radiation technologies, and improve the stability and reliability of the system. Summary of the Invention

[0005] The object of the present invention is to propose an anti-radiation power amplifier applied to spaceborne communication chips.

[0006] The power amplifier proposed by the present invention has a circuit structure including: an anti-radiation power amplifier core circuit, a power detection circuit, an analog-to-digital converter, and a control module circuit; an input signal is input to the anti-radiation power amplifier core circuit, and an output signal is generated and output to the power detection circuit; the power detection circuit processes the signal it receives, outputs the processing result to the analog-to-digital converter, and receives the instruction of the control module circuit to generate the output signal of the overall circuit; the analog-to-digital converter converts the processing result output by the power detection circuit into a digital signal and outputs it to the control module circuit; the control module circuit makes a judgment based on the input digital signal, generates a control signal for controlling the working mode of the anti-radiation power amplifier core circuit, and generates control signals for controlling the power detection circuit and the analog-to-digital converter.

[0007] In the present invention, the anti-radiation power amplifier core circuit is composed of four power amplifiers and 4 numerically controlled single-pole double-throw switches; the circuit structures of the four power amplifiers are exactly the same, and all adopt a three-stage common-source amplifier architecture.

[0008] The power amplifier designed by the present invention generally has four mutually backup power amplifier circuits. The four power amplifier circuits are mutually backup and can be flexibly selected to access two of them to work in the circuit under the control of the system by changing the connection state of the single-pole double-throw switch, thereby effectively reducing the failure probability of the overall circuit and improving the anti-radiation performance and stability of the system. Brief Description of the Drawings

[0009] Figure 1 It is a schematic structural diagram of the anti-radiation power amplifier of the present invention.

[0010] Figure 2 It is a schematic diagram of the core circuit of the anti-radiation power amplifier. Detailed Embodiments

[0011] The present invention will be described in more detail below with reference to the drawings. In the respective drawings, the same elements are denoted by like reference numerals. For the sake of clarity, the various parts in the drawings are not drawn to scale. In addition, some well-known parts may not be shown in the figures.

[0012] Many specific details of the present invention, such as the structure, materials, dimensions, processing techniques and technologies of the devices, are described below in order to understand the present invention more clearly. However, as those skilled in the art can understand, the present invention can be implemented without these specific details.

[0013] Figure 1 It shows a schematic structural diagram of the spaceborne anti-radiation power amplifier of the present invention.

[0014] As Figure 1 shown, the spaceborne anti-radiation power amplifier 100 in the present invention includes an anti-radiation power amplifier core circuit 101, a power detection circuit 102, a control module 103, and an analog-to-digital converter 104. The power supply voltage VDD is connected to the anti-radiation power amplifier core circuit 101. The differential input signals Vi+ and Vi- are input to the anti-radiation power amplifier core circuit 101. The anti-radiation power amplifier core circuit 101 outputs Vo+’ and Vo-’ and transmits them to the power detection circuit 102. The outputs Vo+ and Vo- of the power detection circuit 102 are used as the output signals of the entire power amplifier circuit. The power detection circuit 102 outputs pdout and transmits it to the analog-to-digital converter 104. The analog-to-digital converter 104 outputs adout and transmits it to the control module 103. The control module 103 outputs Ctrl<1:4> and transmits it to the anti-radiation power amplifier core circuit 101. The control module 103 outputs Ctrl5 and transmits it to the power detection circuit 102. The control module 103 outputs Ctrl6 and transmits it to the analog-to-digital converter 104.

[0015] Figure 2Schematic diagram of the core circuit of the anti-radiation power amplifier in the present invention is shown.

[0016] As Figure 2 shown, the core circuit of the anti-radiation power amplifier includes a total of 4 single-pole double-throw switches S1-4, 4 power amplifier branches (105-108), a power distribution network (109) and a power combining network (110); the input signal Vi is fed to the power distribution network (109) and transmitted to the moving terminals of switch S1 and S3 through transmission lines TL1 and TL2; the fixed terminal 1.1 of S1 is connected to the input terminal of the first power amplifier, and the output terminal of the first power amplifier is connected to the fixed terminal 2.1 of S2; the fixed terminal 1.2 of S1 is connected to the input terminal of the second power amplifier, and the output terminal of the second power amplifier is connected to the fixed terminal 2.2 of S2; the fixed terminal 3.1 of S3 is connected to the input terminal of the third power amplifier, and the output terminal of the third power amplifier is connected to the fixed terminal 2.1 of S4; the fixed terminal 3.2 of S3 is connected to the input terminal of the fourth power amplifier, and the output terminal of the fourth power amplifier is connected to the fixed terminal 4.2 of S4; the moving terminals of switch S2 and S4 are connected to the power combining network, and the other end of the power combining network (110) is used as the output Vo' of this circuit module; each power amplifier branch is exactly the same; taking the first power amplifier (105) as an example: the input terminal is grounded through capacitor C1, and the signal is transmitted to the gates of transistors M 1a and M 1b through transformer TF1, and the gate biases of M 1a and M 1b are provided by the center tap of TF1, the source terminals are grounded, and the drain terminals are respectively connected to the gates of M n1a and C n1b formed by transistors; the drain terminals of M 1b and M 1a are connected to transformer TF2, thereby transmitting the signal to the gates of transistors M 1a and M 1b , and the drain bias is provided by the center tap of TF2; the gate biases of M 2a and M 2b are provided by the center tap of TF2, the source terminals are grounded, and the drain terminals are respectively connected to the gates of M 2a and M 2b formed by transistors; the drain terminals of M n2a and C n2b are connected to the gates of M 2b and M 2a ; the drain terminals of M 2a and M 2b are connected to transformer TF3, thereby transmitting the signal to the gates of transistors M 3a and M 3b , and the drain bias is provided by the center tap of TF3, M 3a and M 3bThe gate bias is provided by the center tap of TF3, the source is grounded, and the drain is connected to the gate terminals of M n3a and C n3b respectively through capacitors C 3b and M 3a ; the drain terminals of M 3a and M 3b are connected to the transformer TF4, thereby transmitting the signal to the output terminal and providing its drain bias through the center tap of TF4; in the overall circuit, the switching of the switches S1-4 is controlled by the control signal output by the control module, so as to flexibly switch the actually working power amplifier circuit. For example, any two power amplifier branches can work together to achieve the power amplification function. Using this structure can improve the circuit reliability and enhance the anti-radiation performance and stability of the system.

Claims

1. A power amplifier applied to a spaceborne communication chip, characterized in that The circuit structure includes: an anti-radiation power amplifier core circuit, a power detection circuit, an analog-to-digital converter, and a control module circuit; an input signal is input to the anti-radiation power amplifier core circuit to generate an output signal and output it to the power detection circuit; the power detection circuit processes the signal it receives, outputs the processing result to the analog-to-digital converter, and receives an instruction from the control module circuit to generate an output signal of the overall circuit; the analog-to-digital converter converts the processing result output by the power detection circuit into a digital signal and outputs it to the control module circuit; the control module circuit makes a judgment based on the input digital signal, generates a control signal for controlling the working mode of the anti-radiation power amplifier core circuit, and generates control signals for controlling the power detection circuit and the analog-to-digital converter.

2. The anti-radiation power amplifier applied to the spaceborne communication chip according to claim 1, characterized in that, The anti-radiation power amplifier core circuit is composed of four power amplifiers, 4 numerically controlled single-pole double-throw switches, a power distribution network, and a power synthesis network; the circuit structures of the four power amplifiers are exactly the same, and all adopt a basic three-stage common-source amplifier cascade architecture; the four power amplifier circuits are backup to each other and can be flexibly selected to connect two of them to the circuit for operation under the control of the system by changing the connection state of the single-pole double-throw switch, thereby effectively reducing the failure probability of the overall circuit and improving the anti-radiation performance and stability of the system.

3. The anti-radiation power amplifier applied to the spaceborne communication chip according to claim 2, wherein The anti-radiation power amplifier core circuit includes a total of 4 single-pole double-throw switches S1-4, 4 power amplifier branches, a power distribution network, and a power synthesis network; the input signal Vi is given to the power distribution network and transmitted to the moving ends of switch S1 and S3 through transmission lines TL1 and TL2; the fixed end 1.1 of S1 is connected to the input end of the first power amplifier, and the output end of the first power amplifier is connected to the fixed end 2.1 of S2; the fixed end 1.2 of S1 is connected to the input end of the second power amplifier, and the output end of the second power amplifier is connected to the fixed end 2.2 of S2; the fixed end 3.1 of S3 is connected to the input end of the third power amplifier, and the output end of the third power amplifier is connected to the fixed end 2.1 of S4; the fixed end 3.2 of S3 is connected to the input end of the fourth power amplifier, and the output end of the fourth power amplifier is connected to the fixed end 4.2 of S4; the moving ends of switch S2 and S4 are connected to the power synthesis network, and the other end of the power synthesis network is used as the output Vo' of this circuit module.

4. The anti-radiation power amplifier applied to the spaceborne communication chip according to claim 3, wherein In the core circuit of the radiation-resistant power amplifier, each power amplifier branch is exactly the same; take the first power amplifier as an example: the input end is grounded through the capacitor C1, and the signal is transmitted to the transistor M through the transformer TF1. 1a and M 1b The gate terminal, M 1a and M 1b The gate bias is provided by the center tap of TF1, the source is grounded, and the drain is connected through the capacitor C formed by the transistor. n1a and C n1b Connect M 1b and M 1a The gate terminal; M 1a and M 1b The drain end of the transformer TF2 is connected to transmit the signal to the transistor M 2a and M 2b The gate terminal of TF2 is connected to the drain bias terminal through the center tap of TF2; 2a and M 2b The gate bias is provided by the center tap of TF2, the source is grounded, and the drain is connected through the capacitor C formed by the transistor. n2a and C n2b Connect M 2b and M 2a The gate terminal; M 2a and M 2b The drain end of the transformer TF3 is connected to transmit the signal to the transistor M 3a and M 3b The gate terminal of TF3 is biased by the center tap of TF3. 3a and M 3b The gate bias is provided by the center tap of TF3, the source is grounded, and the drain is connected through the capacitor C formed by the transistor. n3a and C n3b Connect M 3b and M 3a The gate terminal; M 3a and M 3b The drain end of the power amplifier circuit is connected to the transformer TF4, thereby transmitting the signal to the output end, and providing its drain bias through the center tap of TF4; in the overall circuit, the switching of the switch S1-4 is controlled by the control signal output by the control module, so as to flexibly switch the actual working power amplifier circuit, such as any two power amplifier branches can work together to realize the power amplification function. This structure can improve the circuit reliability and enhance the system's radiation resistance and stability.

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