Substrate assembly, display panel and preparation method of substrate assembly

Abstract

The invention relates to a substrate assembly, a display panel and a preparation method of the substrate assembly. The substrate assembly comprises at least one stacking structure, and the stacking structure comprises a substrate which comprises a first face and a second face which are oppositely arranged in the thickness direction of the substrate; the first conductive layer is arranged on the first surface and the second surface; a plurality of first through holes and a plurality of conductive connecting pieces, the first through holes penetrate through the substrate and the first conductive layer along the thickness direction of the substrate, the plurality of first through holes and the plurality of conductive connecting pieces are correspondingly arranged, the conductive connecting pieces are arranged in the corresponding first through holes, and the conductive connecting pieces are connected with the first conductive layer of the first surface and the first conductive layer of the second surface; wherein the opening size of the first through hole located in the first conductive layer is gradually reduced in the direction from the first conductive layer to the substrate. Therefore, according to the substrate assembly, the display panel and the preparation method of the substrate assembly, the stripping risk between the first conductive layer and the substrate can be reduced.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to a substrate assembly, a display panel, and a method for preparing the substrate assembly. Background Art

[0002] Compared with organic substrates, glass substrates have begun to receive attention in the field of advanced packaging due to their excellent flatness, insulation, thermal properties, and optical properties. In glass substrates, vertical electrical connections are provided through high-density through-holes, which are called Through Glass Vias (abbreviated as TGVs).

[0003] In related technologies, an LED integrated packaging display product may include a glass substrate. The glass substrate has a first surface and a second surface oppositely arranged along the thickness direction of the glass substrate. A light-emitting diode is disposed on the first surface, and a driving chip is disposed on the second surface. The driving chip is electrically connected to the light-emitting diode through metal wirings on the glass substrate. However, the above-mentioned metal wirings are prone to peeling from the glass substrate. Summary of the Invention

[0004] Based on this, it is necessary to provide a substrate assembly, a display panel, and a method for preparing the substrate assembly, which can reduce the peeling risk between the first conductive layer and the substrate.

[0005] In a first aspect, an embodiment of the present application provides a substrate assembly, including at least one stacked structure. The stacked structure includes:

[0006] A substrate, including a first surface and a second surface oppositely arranged along the thickness direction of the substrate;

[0007] A first conductive layer, disposed on the first surface and the second surface;

[0008] A plurality of first through-holes and a plurality of conductive connectors. The first through-holes penetrate through the substrate and the first conductive layer along the thickness direction of the substrate. The plurality of first through-holes and the plurality of conductive connectors are correspondingly arranged. The conductive connectors are disposed in the corresponding first through-holes, and the conductive connectors connect the first conductive layer on the first surface and the first conductive layer on the second surface;

[0009] Wherein, the opening size of the first through-hole located in the first conductive layer gradually decreases along the direction from the first conductive layer to the substrate.

[0010] The substrate assembly provided in the embodiment of the present application has an opening size of a first through hole located in the first conductive layer that gradually decreases in the direction from the first conductive layer to the substrate. With the cooperation of the conductive connector and the first through hole, the conductive connector limits the first conductive layer at the first through hole. In addition, the conductive connector can also apply a force toward the substrate to the first conductive layer at the first through hole, so as to reduce the risk of peeling between the first conductive layer and the substrate and improve the structural stability of the substrate assembly.

[0011] In one embodiment, the opening size of the first through hole in the substrate gradually decreases and then gradually increases along the direction from the first surface to the second surface;

[0012] And / or, the first conductive layer includes a first sub-conductive layer and a second sub-conductive layer, the first sub-conductive layer is arranged between the second sub-conductive layer and the substrate; the first sub-conductive layer is a deposited part, and the second sub-conductive layer is an electroplated part.

[0013] In one embodiment, the conductive connector includes a third surface and a fourth surface opposite to each other along the thickness direction of the substrate, the direction from the third surface to the fourth surface is the same as the direction from the first surface to the second surface, the surface of the first conductive layer on the first surface facing away from the substrate is the fifth surface, and the surface of the first conductive layer on the second surface facing away from the substrate is the sixth surface;

[0014] The at least one stacking structure includes a first stacking structure, the substrate assembly includes a second conductive layer, and the second conductive layer is disposed on the third surface and the fifth surface of the first stacking structure.

[0015] In one of the embodiments, at least one stacking structure is configured as a stacking structure group;

[0016] The stacked structure group includes a stacked structure, and part of the second conductive layer is also arranged on the fourth surface and the sixth surface of the first stacked structure; or,

[0017] The stacking structure group includes multiple stacking structures, and the multiple stacking structures also include a second stacking structure. The first stacking structure and the second stacking structure are stacked; the first conductive layer on the second surface of the first stacking structure is electrically connected to the first conductive layer on the first surface of the second stacking structure, and part of the second conductive layer is also arranged on the fourth surface and the sixth surface of the second stacking structure.

[0018] In one of the embodiments, at least one stacking structure is configured as a stacking structure group, the substrate assembly includes a filling member, a second through hole is provided in the stacking structure group, the second through hole penetrates the stacking structure group along the thickness direction of the substrate, and the filling member is provided in the second through hole; the second through hole is arranged at intervals between the first conductive layer and the conductive connecting member in the stacking structure group, and the opening size of the second through hole gradually decreases and then gradually increases along the thickness direction of the substrate;

[0019] And / or, the second conductive layer is an electroplated part;

[0020] And / or, the first conductive layer includes a first sub-conductive layer and a second sub-conductive layer. The first sub-conductive layer is disposed between the second sub-conductive layer and the substrate, and the thickness of the second sub-conductive layer is less than the thickness of the second conductive layer.

[0021] In one embodiment, in the first stacked structure, the first conductive layer on the first surface includes a plurality of first leads and a plurality of pad groups. The plurality of pad groups are arranged along a first direction. The pad group includes a plurality of pads arranged at intervals along a second direction. The pad includes a first sub-pad and a second sub-pad arranged at intervals along the first direction. The plurality of first leads and the plurality of pad groups are correspondingly arranged, and the first lead is connected to each first sub-pad of the corresponding pad group;

[0022] The first sub-pad is used for electrically connecting to the cathode of the light-emitting diode; and / or,

[0023] The second conductive layer on the first sub-pad is configured as a third sub-pad, the second conductive layer on the second sub-pad is configured as a fourth sub-pad, and the second conductive layer on the first lead is configured as a second lead.

[0024] In a second aspect, an embodiment of the present application provides a display panel, including the substrate assembly of the first aspect.

[0025] In a third aspect, an embodiment of the present application provides a method for manufacturing a substrate assembly, including:

[0026] Providing a substrate; the substrate includes a first surface and a second surface oppositely arranged along the thickness direction of the substrate;

[0027] Forming a first conductive layer on the first surface and the second surface;

[0028] Forming a plurality of first through holes; the first through holes penetrate through the substrate and the first conductive layer along the thickness direction of the substrate;

[0029] Forming a plurality of conductive connectors; the plurality of first through holes and the plurality of conductive connectors are correspondingly arranged. The conductive connector is disposed in the corresponding first through hole. The conductive connector connects the first conductive layer on the first surface and the first conductive layer on the second surface. The opening size of the first through hole in the first conductive layer gradually decreases along the direction from the first conductive layer to the substrate. The substrate assembly includes at least one stacked structure, and the stacked structure includes a substrate, a first conductive layer, and a plurality of conductive connectors.

[0030] In one embodiment, forming a first conductive layer on the first surface and the second surface includes:

[0031] Depositing a first sub-conductive layer on the first surface and the second surface;

[0032] A second sub-conductive layer is electroplated on a side of the first sub-conductive layer facing away from the substrate.

[0033] In one embodiment, the conductive connection member includes a third surface and a fourth surface opposite to each other in the thickness direction of the substrate. The direction from the third surface to the fourth surface is the same as the direction from the first surface to the second surface. A fifth surface is the side of the first conductive layer on the first surface facing away from the substrate, and a sixth surface is the side of the first conductive layer on the second surface facing away from the substrate; at least one stacked structure includes a first stacked structure.

[0034] After forming a plurality of conductive connection members, it includes: forming a second conductive layer on the third surface and the fifth surface of the first stacked structure.

[0035] In one embodiment, at least one stacked structure is configured as a stacked structure group.

[0036] The stacked structure group includes one stacked structure. Forming a second conductive layer on the third surface and the fifth surface of the first stacked structure includes: forming a second conductive layer on the third surface, the fifth surface, the fourth surface, and the sixth surface of the first stacked structure; or,

[0037] The stacked structure group includes a plurality of stacked structures. The plurality of stacked structures further includes a second stacked structure. The first stacked structure and the second stacked structure are stacked; the first conductive layer on the second surface of the first stacked structure is electrically connected to the first conductive layer on the first surface of the second stacked structure; forming a second conductive layer on the third surface and the fifth surface of the first stacked structure includes: forming a second conductive layer on the third surface and the fifth surface of the first stacked structure, and the fourth surface and the sixth surface of the second stacked structure.

[0038] In one embodiment, in the first stacked structure, the first surface includes a plurality of lead regions and a plurality of pad region groups. The plurality of pad region groups are arranged along a first direction. The pad region group includes a plurality of pad regions arranged at intervals along a second direction. The pad region includes a first sub-region, a second sub-region, and a third sub-region connected in sequence along the first direction. The lead region includes a fourth sub-region, a fifth sub-region, and a sixth sub-region connected in sequence along the second direction. The plurality of lead regions and the plurality of pad region groups are correspondingly arranged. In the lead region and the corresponding pad region group, the fifth sub-region is connected to each first sub-region of the pad region group.

[0039] Forming a first conductive layer on the first surface of the first stacked structure includes: forming a first conductive layer in the plurality of lead regions and the plurality of pad region groups.

[0040] After forming the second conductive layer, it includes: removing the first conductive layer and the second conductive layer located on the second sub-region, the fourth sub-region, and the sixth sub-region; retaining the first conductive layer located on the first sub-region, the third sub-region, and the fifth sub-region, and respectively forming a first sub-pad, a second sub-pad, and a first lead; retaining the second conductive layer located on the first sub-region, the third sub-region, and the fifth sub-region, and respectively forming a third sub-pad, a fourth sub-pad, and a second lead. Description of the Drawings

[0041] Figure 1 It is a cross-sectional view of the substrate assembly provided by the embodiment of the present application.

[0042] Figure 2 It is another cross-sectional view of the substrate assembly provided by the embodiment of the present application.

[0043] Figure 3 It is a schematic structural diagram of the stacked structure group and the filler provided by the embodiment of the present application.

[0044] Figure 4 It is a schematic structural diagram of the substrate after forming the first sub-conductive layer provided by the embodiment of the present application.

[0045] Figure 5 It is a schematic structural diagram of the substrate after forming the second sub-conductive layer provided by the embodiment of the present application.

[0046] Figure 6 It is a schematic structural diagram of the substrate after forming the first through hole provided by the embodiment of the present application.

[0047] Figure 7 It is a schematic structural diagram of the substrate after forming the conductive connection member provided by the embodiment of the present application.

[0048] Figure 8 It is a schematic structural diagram of the substrate after forming the second conductive layer provided by the embodiment of the present application.

[0049] Figure 9 It is a top view of the substrate after forming the first conductive layer on the substrate of the first stacked structure provided by the embodiment of the present application.

[0050] Figure 10 It is a top view of the substrate after removing the first conductive layer on the second sub-region, the fourth sub-region, and the sixth sub-region of the substrate of the first stacked structure provided by the embodiment of the present application.

[0051] Figure 11 It is a schematic flow chart of the preparation method of the substrate assembly provided by the embodiment of the present application.

[0052] Description of the Reference Numerals:

[0053] 100. Substrate assembly; 101. Stacked structure group; 102. Stacked structure; 102a. First stacked structure; 102b. Second stacked structure; 110. First conductive layer; 111. First sub-conductive layer; 112. Second sub-conductive layer; 115. Fifth surface; 116. Sixth surface; 120. Second conductive layer; 130. Substrate; 131. First surface; 132. Second surface; 141. First through-hole; 142. Second through-hole; 150. Conductive connection member; 153. Third surface; 154. Fourth surface; 160. Filling member; 171. Lead area; 1714. Fourth sub-area; 1715. Fifth sub-area; 1716. Sixth sub-area; 173a. Pad area group; 173. Pad area; 1731. First sub-area; 1732. Second sub-area; 1733. Third sub-area; 183. Third conductive layer; 184. Fourth conductive layer. Detailed implementation manners

[0054] To make the above objects, features, and advantages of the present application more apparent and understandable, the following will describe the detailed implementation manners of the present application in conjunction with the accompanying drawings. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein. Those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0055] In the description of the present application, it should be understood that if there are terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., the orientation or positional relationship indicated by these terms is based on the orientation or positional relationship shown in the accompanying drawings. These are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application.

[0056] In addition, if there are terms such as "first" and "second", these terms are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of the present application, if there is a term "plurality", the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0057] In this application, unless otherwise clearly defined and limited, if terms such as "installed", "connected", "linked", "fixed", etc. appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0058] In this application, unless otherwise clearly defined and limited, if there is a description such as a first feature being "on" or "under" a second feature, its meaning can be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over", and "on" the second feature can be that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is at a higher horizontal level than the second feature. The first feature being "under", "beneath", and "underneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is at a lower horizontal level than the second feature.

[0059] It should be noted that if an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there can also be an intermediate element. If an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. If so, the terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used in this application are only for the purpose of illustration and do not represent the only implementation.

[0060] In the related art, an LED integrated package display product may include a glass substrate, the glass substrate having a first surface and a second surface oppositely disposed along the thickness direction of the glass substrate, a light-emitting diode being disposed on the first surface, and a driving chip being disposed on the second surface, the driving chip being electrically connected to the light-emitting diode through a metal wiring on the glass substrate.

[0061] However, the metal wiring on the glass substrate is formed by direct sputtering, and the connection between the metal wiring and the glass substrate is achieved through physical contact and electrostatic adsorption, resulting in a weak bonding force between the metal wiring and the glass substrate, and thus it is easy for the metal wiring and the glass substrate to peel off.

[0062] To solve the above problems, the embodiments of this application provide a substrate assembly, a display panel, and a preparation method of the substrate assembly, which can reduce the peeling risk between the first conductive layer and the substrate.

[0063] The following will be combined withFigures 1-11 The substrate assembly 100, the display panel, and the manufacturing method of the substrate assembly 100 provided by the embodiments of the present application will be described.

[0064] Refer to Figure 1 , the embodiments of the present application provide a substrate assembly 100. The substrate assembly 100 includes a stacked structure group 101. The stacked structure group 101 includes at least one stacked structure 102, that is, the at least one stacked structure 102 is configured as the stacked structure group 101. The number of stacked structures 102 in the stacked structure group 101 can be 1, 2, 3, or any number greater than 3.

[0065] Refer to Figure 1 , in the same stacked structure 102, the stacked structure 102 includes a substrate 130. The substrate 130 includes a first surface 131 and a second surface 132 that are oppositely arranged along the thickness direction of the substrate 130 (i.e., the third direction Z). The substrate 130 can be used to support the materials subsequently disposed on the substrate 130. The stacked structure 102 includes a first conductive layer 110. The first conductive layer 110 is disposed on the first surface 131 and the second surface 132 of the substrate 130. The stacked structure 102 includes a plurality of first through holes 141 and a plurality of conductive connectors 150. The first through holes 141 penetrate through the substrate 130 and the first conductive layer 110 along the thickness direction of the substrate 130 (i.e., the first through holes 141 penetrate through the stacked structure 102 along the thickness direction of the substrate 130). The plurality of first through holes 141 and the plurality of conductive connectors 150 are correspondingly arranged. The conductive connectors 150 are disposed in the corresponding first through holes 141. The first conductive layer 110 on the first surface 131 and the first conductive layer 110 on the second surface 132 can be electrically connected through the conductive connectors 150. For example, the first through hole 141 can include two first sub-holes and a second sub-hole that are communicated. The first sub-hole is located in the first conductive layer 110, and the second sub-hole is located in the substrate 130. The two first sub-holes are respectively located at both ends of the second sub-hole.

[0066] Among them, the pore wall of the first through hole 141 is in contact with the conductive connection member 150, and the opening size of the first through hole 141 located in the first conductive layer 110 gradually decreases along the direction from the first conductive layer 110 to the substrate 130, that is, the opening size of the first sub-hole gradually decreases along the direction from the first conductive layer 110 to the substrate 130. The conductive connection member 150 is adapted to the shape of the first through hole 141. Along the cross-section parallel to the first surface 131, the cross-sectional area of the conductive connection member 150 located in the first sub-hole gradually decreases along the direction from the first conductive layer 110 to the substrate 130. With the cooperation of the conductive connection member 150 and the first through hole 141, the conductive connection member 150 plays a limiting role on the first conductive layer 110 at the first through hole 141. In addition, it can also make the conductive connection member 150 apply a force towards the substrate 130 to the first conductive layer 110 at the first through hole 141, so as to reduce the peeling risk between the first conductive layer 110 and the substrate 130 and improve the structural stability of the substrate assembly 100.

[0067] Exemplarily, the substrate 130 can be a glass substrate, a silicon substrate or other substrates. In the embodiments of the present application, a glass substrate is taken as an example for illustration. The glass substrate has a lower cost and is more environmentally friendly.

[0068] In some embodiments, the opening size of the first through hole 141 located in the substrate 130 gradually decreases first and then gradually increases along the direction from the first surface 131 to the second surface 132, that is, the opening size of the second sub-hole gradually decreases first and then gradually increases along the direction from the first surface 131 to the second surface 132. At this time, along the cross-section parallel to the first surface 131, the cross-sectional area of the conductive connection member 150 located in the second sub-hole gradually decreases first and then gradually increases along the direction from the first surface 131 to the second surface 132. In this way, it is beneficial to increase the contact area between the conductive connection member 150 and the substrate 130, which is beneficial to improving the connection stability between the conductive connection member 150 and the substrate 130, and further reducing the peeling risk between the first conductive layer 110 and the substrate 130.

[0069] In some embodiments, refer to Figure 1 , the first conductive layer 110 includes a first sub-conductive layer 111 and a second sub-conductive layer 112, and the first sub-conductive layer 111 is disposed between the second sub-conductive layer 112 and the substrate 130. The first sub-conductive layer 111 is a deposited member, and the second sub-conductive layer 112 is an electroplated member. Among them, electroplating is to use current to set the required conductive material on the substrate 130. The glass substrate is non-conductive. The first sub-conductive layer 111 can be deposited on the to-be-electroplated area of the glass substrate first, and by providing current to the first sub-conductive layer 111, the second sub-conductive layer 112 can be electroplated on the first sub-conductive layer 111, and then the second sub-conductive layer 112 and / or other conductive layers can be electroplated on the to-be-electroplated area of the glass substrate.

[0070] Exemplarily, the thickness of the first sub-conductive layer 111 may be less than that of the second sub-conductive layer 112. By setting the thickness of the second sub-conductive layer 112 to be larger, and since the electroplating process is simple and has a low cost, it is beneficial to reduce the preparation difficulty and cost of the first conductive layer 110.

[0071] In some embodiments, referring to Figure 1 , in the same stacked structure 102, the conductive connection member 150 includes a third surface 153 and a fourth surface 154 that are opposite to each other in the thickness direction of the substrate 130. The direction from the third surface 153 to the fourth surface 154 is the same as the direction from the first surface 131 to the second surface 132. The surface of the first conductive layer 110 on the side away from the substrate 130 and located on the first surface 131 is the fifth surface 115, and the surface of the first conductive layer 110 on the side away from the substrate 130 and located on the second surface 132 is the sixth surface 116.

[0072] In some embodiments, referring to Figure 1 , at least one stacked structure 102 includes a first stacked structure 102a. The first stacked structure 102a may be the stacked structure 102 closest to the light-emitting diode in the stacked structure group 101. The wiring on one side of the first surface 131 of the first stacked structure 102a can be used for electrical connection with the light-emitting diode. The substrate assembly 100 includes a second conductive layer 120, and the second conductive layer 120 is disposed on the third surface 153 and the fifth surface 115 of the first stacked structure 102a. In this way, both the first conductive layer 110 at the fifth surface 115 and the conductive connection member 150 at the third surface 153 of the first stacked structure 102a are covered and connected by the second conductive layer 120, which is beneficial to improving the connection stability between the first conductive layer 110 and the conductive connection member 150 on the first surface 131, and further beneficial to reducing the peeling risk between the first conductive layer 110 on the first surface 131 and the substrate 130. Additionally, if the flatness of the surface jointly formed by the third surface 153 and the fifth surface 115 of the first stacked structure 102a is poor, it will cause the flatness of the surface wiring of the substrate assembly 100 to be poor. By providing the second conductive layer 120, the flatness of the surface wiring of the substrate assembly 100 can be improved.

[0073] In some embodiments, referring to Figure 1, the stacked structure group 101 includes a stacked structure 102, that is, the stacked structure group 101 is formed by the first stacked structure 102a. The substrate assembly 100 can be a circuit board formed of a single-layer glass substrate, making the structure of the substrate assembly 100 relatively simple. Part of the second conductive layer 120 is also disposed on the fourth surface 154 and the sixth surface 116 of the first stacked structure 102a. Thus, the first conductive layer 110 at the sixth surface 116 and the conductive connection member 150 at the fourth surface 154 of the first stacked structure 102a are both covered and connected by the second conductive layer 120, which is beneficial to improving the connection stability between the first conductive layer 110 and the conductive connection member 150 on the second surface 132, and further beneficial to reducing the peeling risk between the first conductive layer 110 and the substrate 130 on the second surface 132. At this time, the wiring on the side of the second surface 132 of the first stacked structure 102a can be used to be electrically connected to the driving circuit. Among them, the wiring in the substrate assembly 100 can be formed by at least one of the first conductive layer 110, the second conductive layer 120, the third conductive layer 183, and the fourth conductive layer 184.

[0074] In some other embodiments, referring to Figure 2 , the stacked structure group 101 includes a plurality of stacked structures 102. The number of stacked structures 102 in the stacked structure group 101 can be 2, 3, or any number greater than 3. For example, the substrate assembly 100 can be a multilayer circuit board formed of a multilayer glass substrate, which is beneficial to increasing the ability to design circuits. The plurality of stacked structures 102 are stacked in the thickness direction of the substrate 130, and the directions of the first surface 131 to the second surface 132 of the plurality of stacked structures 102 are the same. Among two adjacent stacked structures 102, at least one of the fourth surface 154 and the sixth surface 116 of one of the stacked structures 102 is electrically connected to at least one of the third surface 153 and the fifth surface 115 of the other stacked structure 102.

[0075] Exemplarily, referring to Figure 2, the plurality of stacked structures 102 further includes a second stacked structure 102b. The second stacked structure 102b can be the stacked structure 102 that is the farthest from the light-emitting diode among the plurality of stacked structures 102, and the second stacked structure 102b can be the stacked structure 102 that is the closest to the driving circuit among the plurality of stacked structures 102. The wiring on one side of the second surface 132 of the second stacked structure 102b can be used for electrical connection with the driving circuit. The first stacked structure 102a and the second stacked structure 102b are stacked. The first conductive layer 110 on the second surface 132 of the first stacked structure 102a is electrically connected to the first conductive layer 110 on the first surface 131 of the second stacked structure 102b (for example, directly or indirectly). Part of the second conductive layer 120 is also disposed on the fourth surface 154 and the sixth surface 116 of the second stacked structure 102b. In this way, the first conductive layer 110 at the sixth surface 116 and the conductive connection member 150 at the fourth surface 154 of the second stacked structure 102b are covered and connected by the second conductive layer 120, which is beneficial to improving the connection stability between the first conductive layer 110 and the conductive connection member 150 on the second surface 132 of the second stacked structure 102b, and further beneficial to reducing the peeling risk between the first conductive layer 110 on the second surface 132 of the second stacked structure 102b and the substrate 130. At this time, the two outermost stacked structures 102 among the plurality of stacked structures 102 are the first stacked structure 102a and the second stacked structure 102b respectively.

[0076] Exemplarily, the plurality of stacked structures 102 further includes a third stacked structure. The third stacked structure is disposed between the first stacked structure 102a and the second stacked structure 102b. The first conductive layer 110 on the second surface 132 of the first stacked structure 102a is electrically connected to the first conductive layer 110 on the first surface 131 of the second stacked structure 102b through the third stacked structure. The number of the third stacked structures is at least one.

[0077] Exemplarily, the second conductive layer 120 is an electroplated part. The second conductive layer 120 is formed by electroplating. The electroplating process does not require the use of a mask plate, which can reduce the cost of the mask plate, reduce the development cost, and reduce the preparation difficulty of the second conductive layer 120.

[0078] In an embodiment where both the second sub-conductive layer 112 and the second conductive layer 120 are electroplated parts, the bonding force between the two electroplated parts of the second sub-conductive layer 112 and the second conductive layer 120 is relatively strong, which is beneficial to improving the connection stability between the second sub-conductive layer 112 and the second conductive layer 120. In addition, after the conductive connection member 150 is formed, the second conductive layer 120 is prepared. The second conductive layer 120 can better cover the first through hole 141, so that the airtightness at the first through hole 141 is better.

[0079] In an embodiment where the materials of the second sub-conductive layer 112 and the second conductive layer 120 are both copper, by electroplating the copper conductive layer twice, it is beneficial to increase the copper thickness and enhance the current-carrying capacity of the wiring.

[0080] Exemplarily, the thickness of the second sub-conductive layer 112 is less than that of the second conductive layer 120. In this way, the thickness of the second sub-conductive layer 112 is relatively small, which is beneficial to reducing the difficulty of forming the first through hole 141 in the second sub-conductive layer 112 and shortening the preparation time of the first through hole 141. Additionally, the larger thickness of the second conductive layer 120 is beneficial to increasing the current-carrying capacity of the wiring.

[0081] In some embodiments, referring to Figure 3 , the substrate assembly 100 includes a filling member 160. A second through hole 142 is provided in the stacked structure group 101. The second through hole 142 penetrates the stacked structure group 101 along the thickness direction of the substrate 130, and the filling member 160 is disposed in the second through hole 142. For example, the second through holes 142 are spaced apart in the first conductive layer 110 and the conductive connection member 150 in the stacked structure group 101, so as to avoid adverse effects of the filling member 160 on the wiring in the stacked structure group 101. The opening size of the second through hole 142 gradually decreases and then gradually increases along the thickness direction of the substrate 130. The shape of the second through hole 142 is adapted to the shape of the filling member 160. Along the cross-section parallel to the first surface 131, the cross-sectional area of the filling member 160 gradually decreases and then gradually increases along the thickness direction of the substrate 130. In this way, through the cooperation of the filling member 160 and the second through hole 142, the filling member 160 is beneficial to preventing peeling between any two adjacent film layers in the stacked structure group 101 and improving the structural stability of the stacked structure group 101.

[0082] Exemplarily, the filling member 160 may include copper, iron, silver, other conductive materials, or non-conductive materials.

[0083] Exemplarily, the filling member 160 may be formed of a material with good heat conduction performance, which is beneficial to improving the heat dissipation performance of the substrate assembly 100.

[0084] Exemplarily, referring to Figure 1 and Figure 9, the substrate assembly 100 may have a first direction X, a second direction Y, and a third direction Z, and the first direction X, the second direction Y, and the third direction Z are all different. The first direction X and the second direction Y may be any two different directions parallel to the substrate 130, and the third direction Z may be any direction intersecting the substrate 130. For example, the first direction X, the second direction Y, and the third direction Z may be perpendicular to each other in pairs. Exemplarily, the first direction X may be the width direction of the substrate assembly 100, the second direction Y may be the length direction of the substrate assembly 100, and the third direction Z may be the thickness direction of the substrate assembly 100. The length, width, thickness, etc. in the embodiments of the present application are only for convenience of description and do not mean any limitation on the size. For example, the width may be greater than, equal to, or less than the length. The direction of the substrate assembly 100 may be consistent with the direction of the film layer such as the substrate 130.

[0085] In some embodiments, referring to Figure 9 and Figure 10 , in the first stacked structure 102a, the first surface 131 includes a plurality of lead regions 171 and a plurality of pad region groups 173a. The plurality of pad region groups 173a are arranged along the first direction X, the plurality of lead regions 171 are arranged along the first direction X, the pad region group 173a includes a plurality of pad regions 173 arranged at intervals along the second direction Y, and the pad region group 173a is Figure 9 a column of pad regions 173 in

[0086] Exemplarily, in the first stacked structure 102a, the first conductive layer 110 located on the first surface 131 includes a plurality of first leads and a plurality of pad groups. The first leads are located on the fifth sub-region 1715, and the pad groups are located on the pad region group 173a. The plurality of pad groups are arranged along the first direction X. The pad group includes a plurality of pads arranged at intervals along the second direction Y. The pad includes a first sub-pad and a second sub-pad arranged at intervals along the first direction X. The first sub-pad is located on the first sub-region 1731, and the second sub-pad is located on the third sub-region 1733. The plurality of first leads and the plurality of pad groups are correspondingly arranged, and each first sub-pad of the first lead and the corresponding pad group is connected. Among them, the plurality of pads are correspondingly arranged with the plurality of light-emitting diodes. The first sub-pad is used for electrically connecting with the cathode of the corresponding light-emitting diode. In this way, the cathodes of the corresponding plurality of light-emitting diodes can be connected together through the first lead, so as to make the cathodes of the plurality of light-emitting diodes have a common potential.

[0087] In some embodiments, the second conductive layer 120 located on the first sub-pad is configured as a third sub-pad, the second conductive layer 120 located on the second sub-pad is configured as a fourth sub-pad, and the second conductive layer 120 located on the first lead is configured as a second lead.

[0088] In some embodiments, referring to Figure 1 , the substrate assembly 100 includes a third conductive layer 183, and the third conductive layer 183 is disposed on a side of the second conductive layer 120 away from the stacked structure group 101.

[0089] In some embodiments, the substrate assembly 100 includes a fourth conductive layer 184, and the fourth conductive layer 184 is disposed on a side of the third conductive layer 183 away from the stacked structure group 101.

[0090] Exemplarily, at least one of the third conductive layer 183 and the fourth conductive layer 184 can be an electroplated part.

[0091] The display panel provided by the embodiments of the present application will be described below.

[0092] The embodiments of the present application provide a display panel, including the substrate assembly 100 in the above embodiments.

[0093] In some embodiments, the display panel may include a plurality of light-emitting diodes. The light-emitting diodes are disposed on one side of the substrate assembly 100, and the light-emitting diodes are electrically connected to the wiring on one side of the substrate assembly 100. For example, the plurality of light-emitting diodes are arranged at intervals, and there is a spacing between adjacent two light-emitting diodes.

[0094] Exemplarily, the light-emitting diode can be an LED chip.

[0095] In some embodiments, the display panel includes a plurality of pixel units, and each pixel unit includes at least one light-emitting diode. In the embodiments of the present application, an example in which each pixel unit includes a plurality of light-emitting diodes is used for illustration.

[0096] In some embodiments, each pixel unit includes at least two of a red LED chip, a green LED chip, and a blue LED chip.

[0097] In some embodiments, each pixel unit includes at least one red LED chip, at least one green LED chip, and at least one blue LED chip.

[0098] Specifically, each pixel unit may include a red LED chip, a green LED chip, and a blue LED chip, and the red LED chip, the blue LED chip, and the green LED chip are arranged in a straight line or a triangle; the straight line may be a horizontal straight line or a vertical straight line; the triangle may be an equilateral triangle, an isosceles triangle, a right triangle, or other irregular triangles.

[0099] Specifically, each pixel unit may include four LED chips, and the four LED chips are arranged in a quadrilateral shape, and the quadrilateral may be a square, a rectangle, a rhombus, or other irregular quadrilateral shapes; for example, each pixel unit includes two red LED chips, one green LED chip, and one blue LED chip, and the two red LED chips are respectively located at opposite corners of the quadrilateral, and the green LED chip and the blue LED chip are respectively located at the other opposite corners of the quadrilateral; or, each pixel unit includes two green LED chips, one red LED chip, and one blue LED chip, and the two green LED chips are respectively located at opposite corners of the quadrilateral, and the red LED chip and the blue LED chip are respectively located at the other opposite corners of the quadrilateral; or, each pixel unit includes two blue LED chips, one red LED chip, and one green LED chip, and the two blue LED chips are respectively located at opposite corners of the quadrilateral, and the red LED chip and the green LED chip are respectively located at the other opposite corners of the quadrilateral.

[0100] In some embodiments, the display panel may further include a driving circuit (for example, a driving chip), the driving circuit is disposed on the other side of the substrate assembly 100, and the driving circuit is electrically connected to the wiring on the other side of the substrate assembly 100. In this way, the driving circuit and the light-emitting diodes can be electrically connected through the substrate assembly 100.

[0101] The display device provided by the embodiments of the present application is described below.

[0102] A display device provided by an embodiment of the present application, the display device includes the display panel in the above embodiment. The display device may include a mobile phone, a television, a laptop computer, a desktop monitor, a tablet computer, a digital camera, a smart bracelet, smart glasses, an in-vehicle display, an industrial control device, a medical display screen, a touch interaction terminal, or other devices with a display function, etc., and the embodiments of the present application do not limit this.

[0103] The preparation method of the substrate assembly 100 provided by the embodiments of the present application will be described below.

[0104] An embodiment of the present application provides a preparation method of a substrate assembly 100 for preparing the substrate assembly 100 in the above embodiment. Refer to Figure 11 , the preparation method of the substrate assembly 100 includes:

[0105] S100: Provide a substrate; the substrate includes a first surface and a second surface oppositely arranged along the thickness direction of the substrate.

[0106] Refer to Figure 4 , provide a substrate 130.

[0107] S200: Form a first conductive layer on the first surface and the second surface.

[0108] Refer to Figure 5 , after providing the substrate 130, it may include forming a first conductive layer 110 on the first surface 131 and the second surface 132.

[0109] S300: Form a plurality of first through holes; the first through holes penetrate the substrate and the first conductive layer along the thickness direction of the substrate.

[0110] Refer to Figure 6 , after forming the first conductive layer 110, it may include forming a plurality of first through holes 141. The through holes penetrate the substrate 130 and the first conductive layer 110 along the thickness direction of the substrate 130.

[0111] Exemplarily, according to a pre-designed drawing, the first through holes 141 are formed by a laser drilling method.

[0112] Exemplarily, the laser wavelength range for laser drilling is 1000nm - 1100nm, the laser energy range is 10W - 40W, and the time range is 1H - 4H.

[0113] Exemplarily, the first through holes 141 may be TGV through holes.

[0114] S400: Form a plurality of conductive connectors; a plurality of first through-holes and a plurality of conductive connectors are correspondingly arranged, the conductive connectors are disposed in the corresponding first through-holes, the conductive connectors connect the first conductive layer on the first surface and the first conductive layer on the second surface, and the opening size of the first through-hole located in the first conductive layer gradually decreases along the direction from the first conductive layer to the substrate. The substrate assembly includes at least one stacked structure, and the stacked structure includes a substrate, a first conductive layer, and a plurality of conductive connectors.

[0115] Refer to Figure 7 , after forming the first through-hole 141, it may include forming a plurality of conductive connectors 150; a plurality of first through-holes 141 and a plurality of conductive connectors 150 are correspondingly arranged, and the conductive connectors 150 are disposed in the corresponding first through-holes 141; the hole wall of the first through-hole 141 is in contact with the conductive connector 150, and the opening size of the first through-hole 141 located in the first conductive layer 110 gradually decreases along the direction from the first conductive layer 110 to the substrate 130. The substrate assembly 100 includes at least one stacked structure 102, and the stacked structure 102 includes a substrate 130, a first conductive layer 110, and a plurality of conductive connectors 150. In this way, it is beneficial to reduce the peeling risk between the first conductive layer 110 and the substrate 130. The principle has been described and will not be elaborated here.

[0116] Exemplarily, the material of the conductive connector 150 may include copper, iron, silver, or other conductive materials. In the embodiments of the present application, the material of the conductive connector 150 is taken as an example of copper for illustration.

[0117] Exemplarily, after filling copper in the first through-hole 141 to form the conductive connector 150, the stacked structure 102 can be subjected to a pressing process to make the surfaces of the first conductive layer 110 and the conductive connector 150 relatively flat, and improve the bonding force between the first conductive layer 110, the conductive connector 150 and the substrate 130, as well as the bonding force between the first conductive layer 110 and the conductive connector 150.

[0118] In some embodiments, refer to Figure 4 and Figure 5 , forming the first conductive layer 110 on the first surface 131 and the second surface 132 may include depositing a first sub-conductive layer 111 on the first surface 131 and the second surface 132, and then electroplating a second sub-conductive layer 112 on the side of the first sub-conductive layer 111 facing away from the substrate 130. In this way, the first sub-conductive layer 111 can be deposited first and current can be provided to the first sub-conductive layer 111 to electroplate the second sub-conductive layer 112 on the first sub-conductive layer 111.

[0119] Exemplarily, the deposition process may include an atomic layer deposition (ALD) process, a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, etc. Other structural layers in the embodiments of the present disclosure may also be formed by deposition, which will not be elaborated herein.

[0120] Exemplarily, the material of the first sub-conductive layer 111 may include titanium nitride or other conductive materials.

[0121] Exemplarily, the thickness range of the first sub-conductive layer 111 may be 0.5 nm - 1.5 nm. For example, it may be 1 nm.

[0122] Exemplarily, according to a pre-designed circuit layer, the first sub-conductive layer 111 is deposited using an ALD device as a seed conductive layer.

[0123] Exemplarily, during the electroplating of the second sub-conductive layer 112, the substrate 130 may be immersed in a solution containing copper ions. The current density range for the electroplating of the second sub-conductive layer 112 may be 5 A / dm -2 -15 A / dm -2 , and the electroplating time range is 20 minutes - 60 minutes.

[0124] Exemplarily, the thickness range of the second sub-conductive layer 112 may be 1 μm - 3 μm.

[0125] Exemplarily, the material of the second sub-conductive layer 112 may include copper, iron, silver or other conductive materials.

[0126] In some embodiments, referring to Figure 8 , the conductive connector 150 includes a third surface 153 and a fourth surface 154 that are opposite to each other in the thickness direction of the substrate 130. The direction from the third surface 153 to the fourth surface 154 is the same as the direction from the first surface 131 to the second surface 132. The surface of the first conductive layer 110 on the side away from the substrate 130 located on the first surface 131 is the fifth surface 115, and the surface of the first conductive layer 110 on the side away from the substrate 130 located on the second surface 132 is the sixth surface 116. At least one stacked structure 102 includes a first stacked structure 102a.

[0127] In some embodiments, referring to Figure 8, after forming a plurality of conductive connectors 150, it may include forming a second conductive layer 120 on the third surface 153 and the fifth surface 115 of the first stacked structure 102a. In this way, it is beneficial to improve the connection stability between the first conductive layer 110 on the first surface 131 of the first stacked structure 102a and the conductive connectors 150, and further beneficial to reduce the peeling risk between the first conductive layer 110 on the first surface 131 of the first stacked structure 102a and the substrate 130.

[0128] See Figure 8 , in an embodiment where the stacked structure group 101 includes one stacked structure 102, forming the second conductive layer 120 on the third surface 153 and the fifth surface 115 of the first stacked structure 102a may include forming the second conductive layer 120 on the third surface 153 and the fifth surface 115 of the first stacked structure 102a, and the fourth surface 154 and the sixth surface 116 of the first stacked structure 102a. In this way, forming the second conductive layer 120 on both sides of the stacked structure group 101 simultaneously can simplify the preparation process of the second conductive layer 120 on both sides and reduce the preparation cost.

[0129] See Figure 2 , in an embodiment where the stacked structure group 101 includes multiple stacked structures 102, the multiple stacked structures 102 further include a second stacked structure 102b. The first stacked structure 102a and the second stacked structure 102b are stacked, and the first conductive layer 110 on the second surface 132 of the first stacked structure 102a is electrically connected to the first conductive layer 110 on the first surface 131 of the second stacked structure 102b. Forming the second conductive layer 120 on the third surface 153 and the fifth surface 115 of the first stacked structure 102a may include forming the second conductive layer 120 on the third surface 153 and the fifth surface 115 of the first stacked structure 102a, and the fourth surface 154 and the sixth surface 116 of the second stacked structure 102b. In this way, forming the second conductive layer 120 on both sides of the stacked structure group 101 simultaneously can simplify the preparation process of the second conductive layer 120 on both sides and reduce the preparation cost.

[0130] Exemplarily, the material of the second conductive layer 120 may include copper, iron, silver or other conductive materials.

[0131] Exemplarily, the current density range for electroplating the second conductive layer 120 may be 5 / dm -2 -15A / dm -2 , and the electroplating time range is 20 minutes - 60 minutes.

[0132] Exemplarily, the thickness range of the second conductive layer 120 may be 5μm - 10μm.

[0133] In some embodiments, see Figure 9, in an embodiment where the first surface 131 of the first stacked structure 102a includes a plurality of lead regions 171 and a plurality of pad region groups 173a, forming the first conductive layer 110 on the first surface 131 may include forming the first conductive layer 110 in the plurality of lead regions 171 and the plurality of pad region groups 173a. Thus, the first conductive layer 110 on the first sub-region 1731 and the first conductive layer 110 on the third sub-region 1733 are electrically connected through the first conductive layer 110 on the second sub-region 1732, so that there is no need to provide leads for the first sub-region 1731 and the third sub-region 1733 respectively when electroplating a conductive material on the first sub-region 1731 and the third sub-region 1733. That is, current can be introduced into the first conductive layer 110 of the first sub-region 1731 and the third sub-region 1733 through the first lead to achieve electroplating, the number of leads can be reduced, the pattern of the first conductive layer 110 can be simplified, which is beneficial to improving the image density of the first conductive layer 110, that is, improving the wiring density of the substrate assembly 100. In addition, the first conductive layer 110 on the fourth sub-region 1714 and the sixth sub-region 1716 can extend the length of the first lead, which is beneficial to providing current to the first lead, and can also electrically connect the first leads on different substrates 130 through the first conductive layer 110 on the fourth sub-region 1714 and the sixth sub-region 1716, so as to facilitate electroplating of multiple substrates 130 and reduce the electroplating difficulty of multiple substrates 130.

[0134] In some embodiments, in the first stacked structure 102a, forming the second conductive layer 120 may include forming the second conductive layer 120 in the plurality of lead regions 171 and the plurality of pad region groups 173a.

[0135] In some embodiments, after forming the second conductive layer 120, it may include removing the first conductive layer 110 and the second conductive layer 120 located on the second sub-region 1732, the fourth sub-region 1714, and the sixth sub-region 1716. Thus, by removing the first conductive layer 110 and the second conductive layer 120 on the fourth sub-region 1714 and the sixth sub-region 1716, it is beneficial to reduce the border width of the display panel. In addition, by removing the first conductive layer 110 and the second conductive layer 120 located on the second sub-region 1732, the first conductive layer 110 on the first sub-region 1731 and the third sub-region 1733 can be separated, and the second conductive layer 120 on the first sub-region 1731 and the third sub-region 1733 can be separated to prevent short-circuiting of the positive and negative electrodes of the light-emitting diode. Among them, the first conductive layer 110 located on the first sub-region 1731, the third sub-region 1733, and the fifth sub-region 1715 is retained, and the first sub-pad, the second sub-pad, and the first lead are respectively formed. The second conductive layer 120 located on the first sub-region 1731, the third sub-region 1733, and the fifth sub-region 1715 is retained, and the third sub-pad, the fourth sub-pad, and the second lead are respectively formed.

[0136] Exemplarily, according to the design of the drawing, laser etching is used to remove the first conductive layer 110 and the second conductive layer 120 located on the second sub-region 1732, the fourth sub-region 1714, and the sixth sub-region 1716.

[0137] Exemplarily, the laser wavelength range for laser etching is 800nm - 900nm, the energy range of the laser is 5W - 15W, and the time range is 1H - 2H.

[0138] In some embodiments, after forming the second conductive layer 120 and before removing the first conductive layer 110 and the second conductive layer 120 located on the second sub-region 1732, the fourth sub-region 1714, and the sixth sub-region 1716, it may include forming a third conductive layer 183 and a fourth conductive layer 184 in sequence on the side of the second conductive layer 120 facing away from the stacked structure group 101.

[0139] Exemplarily, the fourth conductive layer 184 can be used to prevent wiring oxidation to protect the wiring.

[0140] Exemplarily, the material of the fourth conductive layer 184 may include gold or other conductive materials.

[0141] Exemplarily, the current density range for electroplating the fourth conductive layer 184 can be 1A / dm -2 - 5A / dm -2 , and the electroplating time range is 1.5H - 2.5H.

[0142] Exemplarily, the thickness range of the fourth conductive layer 184 is 5μm - 15μm.

[0143] Exemplarily, the third conductive layer 183 can serve as a transition layer between the second conductive layer 120 and the fourth conductive layer 184, and is used to improve the bonding force between the second conductive layer 120 and the fourth conductive layer 184.

[0144] Exemplarily, the material of the third conductive layer 183 may include nickel, palladium, or other conductive materials.

[0145] Exemplarily, the current density range for electroplating the third conductive layer 183 can be 1A / dm -2 - 5A / dm -2 , and the electroplating time range is 1.5H - 2.5H.

[0146] Exemplarily, the thickness range of the third conductive layer 183 is 5μm - 15μm.

[0147] In some embodiments, removing the first conductive layer 110 and the second conductive layer 120 located on the second sub-region 1732, the fourth sub-region 1714, and the sixth sub-region 1716 may include removing the first conductive layer 110, the second conductive layer 120, the third conductive layer 183, and the fourth conductive layer 184 located on the second sub-region 1732, the fourth sub-region 1714, and the sixth sub-region 1716. Among them, the first conductive layer 110, the second conductive layer 120, the third conductive layer 183, and the fourth conductive layer 184 that are retained on the first sub-region 1731, the third sub-region 1733, and the fifth sub-region 1715 form wirings on the first surface 131 of the first stacked structure 102a.

[0148] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.

[0149] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A substrate assembly, characterized in that, Comprising at least one stacked structure, the stacked structure comprising: A substrate including a first surface and a second surface disposed opposite to each other in the thickness direction of the substrate; A first conductive layer disposed on the first surface and the second surface; A plurality of first through-holes and a plurality of conductive connectors, the first through-holes penetrating through the substrate and the first conductive layer in the thickness direction of the substrate, the plurality of first through-holes and the plurality of conductive connectors being correspondingly arranged, the conductive connectors being disposed in the corresponding first through-holes, and the conductive connectors connecting the first conductive layer on the first surface and the first conductive layer on the second surface; Wherein, the opening size of the first through-hole located in the first conductive layer gradually decreases in the direction from the first conductive layer to the substrate.

2. The substrate assembly according to claim 1, characterized in that, The opening size of the first through-hole located in the substrate gradually decreases first and then gradually increases in the direction from the first surface to the second surface; And / or, the first conductive layer includes a first sub-conductive layer and a second sub-conductive layer, the first sub-conductive layer being disposed between the second sub-conductive layer and the substrate; the first sub-conductive layer is a deposited component, and the second sub-conductive layer is an electroplated component.

3. The substrate assembly according to claim 1 or 2, characterized in that, The conductive connector includes a third surface and a fourth surface disposed opposite to each other in the thickness direction of the substrate, the direction from the third surface to the fourth surface being the same as the direction from the first surface to the second surface, the surface of the first conductive layer on the first surface facing away from the substrate being a fifth surface, and the surface of the first conductive layer on the second surface facing away from the substrate being a sixth surface; The at least one stacked structure includes a first stacked structure, and the substrate assembly includes a second conductive layer, the second conductive layer being disposed on the third surface and the fifth surface of the first stacked structure.

4. The substrate assembly according to claim 3, wherein The at least one stacked structure is configured as a stacked structure group; The stacked structure group includes one of the stacked structures, and a part of the second conductive layer is further disposed on the fourth surface and the sixth surface of the first stacked structure; Or, The stacked structure group includes a plurality of the stacked structures, the plurality of the stacked structures further including a second stacked structure, the first stacked structure and the second stacked structure being stacked; the first conductive layer on the second surface of the first stacked structure is electrically connected to the first conductive layer on the first surface of the second stacked structure, and a part of the second conductive layer is further disposed on the fourth surface and the sixth surface of the second stacked structure.

5. The substrate assembly according to claim 3, characterized in that, The at least one stacked structure is configured as a stacked structure group, the substrate assembly includes a filling member, the stacked structure group is provided with a second through-hole, the second through-hole penetrating through the stacked structure group in the thickness direction of the substrate, the filling member being disposed in the second through-hole; the second through-hole is spaced from the first conductive layer and the conductive connectors in the stacked structure group, and the opening size of the second through-hole gradually decreases first and then gradually increases in the thickness direction of the substrate; And / or, the second conductive layer is an electroplated component; And / or, the first conductive layer includes a first sub-conductive layer and a second sub-conductive layer, the first sub-conductive layer is arranged between the second sub-conductive layer and the substrate, and the thickness of the second sub-conductive layer is smaller than the thickness of the second conductive layer.

6. The substrate assembly according to claim 3, wherein In the first stacked structure, the first conductive layer located on the first surface includes a plurality of first leads and a plurality of pad groups, the plurality of pad groups are arranged along a first direction, the pad groups include a plurality of pads arranged at intervals along a second direction, the pads include first sub-pads and second sub-pads arranged at intervals along the first direction, the plurality of first leads and the plurality of pad groups are arranged correspondingly, and the first leads are connected to each of the first sub-pads of the corresponding pad groups; The first sub-pad is used to be electrically connected to the cathode of the light emitting diode; and / or, The second conductive layer on the first sub-pad is configured as a third sub-pad, the second conductive layer on the second sub-pad is configured as a fourth sub-pad, and the second conductive layer on the first lead is configured as a second lead.

7. A display panel, characterized in that, A substrate assembly comprising any one of claims 1-6.

8. A preparation method of a substrate assembly, characterized in that, include: providing a substrate; The substrate comprises a first surface and a second surface which are arranged opposite to each other along the thickness direction of the substrate; forming a first conductive layer on the first surface and the second surface; forming a plurality of first through holes, wherein the first through holes penetrate the substrate and the first conductive layer along the thickness direction of the substrate; A plurality of conductive connectors are formed; the plurality of first through holes and the plurality of conductive connectors are arranged correspondingly, the conductive connectors are arranged in the corresponding first through holes, the conductive connectors connect the first conductive layer of the first surface and the first conductive layer of the second surface, the opening size of the first through hole located in the first conductive layer gradually decreases along the direction from the first conductive layer to the substrate, the substrate assembly includes at least one stacking structure, and the stacking structure includes a substrate, the first conductive layer and the plurality of conductive connectors.

9. The preparation method of the substrate assembly according to claim 8, wherein, The forming of a first conductive layer on the first surface and the second surface comprises: depositing a first sub-conductive layer on the first surface and the second surface; A second sub-conductive layer is electroplated on a side of the first sub-conductive layer facing away from the substrate.

10. The manufacturing method of the substrate assembly according to claim 8, wherein, The conductive connecting member comprises a third surface and a fourth surface opposite to each other along the thickness direction of the substrate, the direction from the third surface to the fourth surface is the same as the direction from the first surface to the second surface, the surface of the first conductive layer located on the first surface facing away from the substrate is a fifth surface, and the surface of the first conductive layer located on the second surface facing away from the substrate is a sixth surface; The at least one stacked structure comprises a first stacked structure; After forming the plurality of conductive connecting members, the method further includes: forming a second conductive layer on the third surface and the fifth surface of the first stacked structure.

Images