Integrated process flow for hybrid bonding

Abstract

A process flow for bonding die to a substrate combines defect risk management and yield enhancement by reducing the flow complexity. In some embodiments, a process flow may include performing a radiation process on a component substrate to weaken an adhesive bond of a die to a surface of the component substrate, performing a first wet cleaning process on the component substrate after the radiation process to clean the die bond surface, performing an ejection and pickup process after performing the first wet cleaning process, and performing a second wet cleaning process after performing the second wet cleaning process to clean the die bond surface. The method includes performing a first wet cleaning process on a component substrate to remove die from the component substrate for bonding to the substrate, performing a plasma activation process on the substrate, performing a second wet cleaning process on the substrate after the plasma activation process for cleaning a substrate bonding surface of the substrate, and performing a hybrid bonding process, a die bonding surface of the die is bonded to a substrate bonding surface of the substrate.

Description

Technical Field

[0001] Embodiments of the principles of the present invention generally relate to semiconductor processing of semiconductor substrates. Background Art

[0002] A die is attached to a substrate using a bonding process. When the surface features of the die include a metal material that will be connected to other metal materials on the substrate, the process is called hybrid bonding because more than one type of material is bonded. To increase the bonding or attraction of the dielectric material between the die and the substrate, the die and the substrate are subjected to a complex preparation process before the bonding process. The complexity of the preparation process flow increases maintenance because, in addition to increasing the preparation time that directly affects the bonding yield, the number of processing chambers also needs to be increased. In some cases, this processing may also increase the risk of defects by exposing the substrate to an additional environment where particles may be deposited on the substrate.

[0003] Accordingly, the inventors provide an improved hybrid bonding process flow to reduce the risk of defects and increase the bonding throughput while reducing the bonding cost. Summary of the Invention

[0004] Methods for improving a hybrid bonding process flow are provided herein.

[0005] In some embodiments, a method of bonding a die to a substrate may include performing a radiation process on a component substrate having a plurality of dies to weaken the adhesion bonding of the plurality of dies to the surface of the component substrate; after the radiation process, performing a first wet cleaning process on the component substrate to clean at least one die bonding surface; performing a pick - and - place process after performing the first wet cleaning process to remove at least one of the plurality of dies from the component substrate for bonding to the substrate; performing a plasma activation process on the substrate; after the plasma activation process, performing a second wet cleaning process on the substrate to clean the substrate bonding surface of the substrate; and performing a hybrid bonding process to bond at least one die bonding surface of at least one of the plurality of dies to the substrate bonding surface of the substrate.

[0006] In some embodiments, a hybrid bonding tool for bonding die to a substrate may include at least one radiation chamber, at least one wet cleaning chamber, at least one plasma activation chamber, at least one hybrid bonding chamber; and a controller of the hybrid bonding tool, the hybrid bonding tool being configured to bond die to a substrate by: in at least one radiation chamber, performing a radiation process on a component substrate having a plurality of die to weaken the adhesion bonding of the plurality of die to the surface of the component substrate; after the radiation process, in at least one wet cleaning chamber, performing a first wet cleaning process on the component substrate to clean at least one die bonding surface; after performing the first wet cleaning process, performing a pick-and-place process in at least one hybrid bonding chamber to remove at least one of the plurality of die from the component substrate for bonding to the substrate; in at least one plasma activation chamber, performing a plasma activation process on the substrate; after the plasma activation process on the substrate, performing a second wet cleaning process in at least one wet cleaning chamber to clean the substrate bonding surface of the substrate; and performing a hybrid bonding process in at least one hybrid bonding chamber to bond at least one die bonding surface of at least one of the plurality of die to the substrate bonding surface of the substrate.

[0007] In some embodiments, a non-transitory computer-readable medium storing instructions that, when executed, cause a method for bonding die to a wafer to be performed, the method may include performing a radiation process on a component substrate having a plurality of die to weaken the adhesion bonding of the plurality of die to the surface of the component substrate; after the radiation process, performing a first wet cleaning process on the component substrate to clean at least one die bonding surface; after performing the first wet cleaning process, performing a pick-and-place process to remove at least one of the plurality of die from the component substrate for bonding to the substrate; performing a plasma activation process on the substrate; after the plasma activation process, performing a second wet cleaning process on the substrate to clean the substrate bonding surface of the substrate; and performing a hybrid bonding process to bond at least one die bonding surface of at least one of the plurality of die to the substrate bonding surface of the substrate.

[0008] Other and further embodiments are disclosed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Embodiments of the present disclosure, briefly outlined above and discussed in detail below, may be understood by reference to the illustrative embodiments shown in the accompanying drawings. However, the drawings only show typical embodiments of these principles and should not be considered as limiting the scope since these principles may admit other equivalent embodiments.

[0010] Figure 1 A hybrid bonding process flow according to some embodiments of the principles of the present invention is shown.

[0011] Figure 2 Shows the process flow of anhydrous hybrid bonding according to some embodiments of the principles of the present invention.

[0012] Figure 3 Shows the process flow of hybrid bonding with degassing of componentless substrates according to some embodiments of the principles of the present invention.

[0013] Figure 4 Shows the process flow of hybrid bonding with only substrate activation according to some embodiments of the principles of the present invention.

[0014] Figure 5 Is an anhydrous hybrid bonding method according to some embodiments of the principles of the present invention.

[0015] Figure 6 Is a hybrid bonding method with degassing of componentless substrates according to some embodiments of the principles of the present invention.

[0016] Figure 7 Is a hybrid bonding method with only substrate activation according to some embodiments of the principles of the present invention.

[0017] Figure 8 Shows an isometric view of the bonding surface of the die and the substrate according to some embodiments of the principles of the present invention.

[0018] Figure 9 Shows a schematic top view of a multi-chamber processing tool for bonding a die to a substrate according to some embodiments of the principles of the present invention.

[0019] For ease of understanding, the same reference numerals are used throughout the figures to denote the same elements whenever possible. The drawings are not drawn to scale and may be simplified for clarity. The elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation. Detailed Description

[0020] These methods provide an overall performance improvement of the hybrid bonding process flow by reducing the defect risk and increasing the bonding throughput. These methods are optimized for integrated hybrid bonding tools with on-board auxiliary processing chambers. Typical methods for improving bonding focus on aspects such as material selection, processing chamber design, and / or chamber processing conditions. The methods of the principles of the present invention employ alternative processing flows that are optimized based on overall process control of the bonding process using an integrated cluster hybrid bonding tool, thereby achieving better bonding performance and reducing costs.

[0021] Integrated cluster hybrid bonding tools, such as Figure 9The multi-chamber processing tool shown (described below) provides multiple processing chambers or stations in a controlled environment. The controlled environment allows processing within a single chamber and movement of substrates between chambers without the risk of contamination due to exposure to undesirable environments that could cause, for example, oxidation of materials on the substrate and / or deposition of particles on the substrate, resulting in damage and / or impaired performance. Figure 1 An example of a first integration tool bonding process flow 100 for hybrid bonding is shown. In the bonding process, the die (component substrate) and the substrate to which the die is to be bonded are prepared prior to bonding to improve the bonding performance. In some cases, the component substrate 102 can be processed in parallel before or after the substrate 118, and the die from the component substrate 102 will be bonded to the substrate 118.

[0022] Prior to the hybrid bonding process, the component substrate 102 can undergo other processes. The other processes can include upstream processing such as patterning, chemical mechanical polishing (CMP), back grinding, dicing, and similar processes. For example, in some embodiments, the die can be separated (singulated) and held together on the backside by a dicing tape to produce the component substrate 102. In some embodiments, the die can be reconstituted (molded) on a carrier wafer to form the component substrate 102, and the die is selected from the component substrate 102 for bonding. In the first integration tool bonding process flow 100, the component substrate 102 undergoes a first wet cleaning process 104, followed by a degassing process 106 to help remove moisture from the component substrate 102. The component substrate 102 then undergoes a first plasma activation process 108 to increase the bonding adhesion, followed by a first hydration process 110. Subsequently, the component substrate 102 undergoes a radiation process 112 (e.g., UV radiation, etc.) to loosen the binder bonding that holds the die to the component substrate 102 prior to bonding.

[0023] In some embodiments, substrate 118 may undergo additional processes before the bonding process flow. Depending on the process flow and use case, substrate 118 may or may not have a silicon underlayer, or may be a glass-supported silicon wafer. Substrate 118 may also have previously stacked die thereon. Substrate 118 is processed before, during, or after processing component substrate 102. Substrate 118 first undergoes a second wet cleaning process 120, followed by a second plasma activation process 122. Subsequently, substrate undergoes a second hydration process 124 to prepare for bonding. Subsequently, bonding is completed by subjecting component substrate 102 to an eject and pick process 114, which allows selection and flipping of the die to prepare for bonding. In bonding process 116, the die are placed on substrate 118, and the die are bonded to substrate 118, resulting in a die-to-substrate (or chip-to-substrate) bonded substrate 126. The die-to-substrate bonded substrate 126 may have multiple die bonded to the surface during one or more bondings. Figure 8 Isometric view 800 shows die 802 from component substrate 102 being ejected / flipped and bonded to substrate bonding surface 806 of substrate 118. When die 802 is attached to component substrate 102, the uppermost surface of die 802 is die bonding surface 804. When die 802 is flipped 808, the lowermost surface of die 802 becomes die bonding surface 804. During bonding 810, die bonding surface 804 and substrate bonding surface 806 contact and may allow bonding together. Bonding performance is affected by parameters such as bonding surface contamination, bonding pressure, and / or bonding temperature and the like.

[0024] The inventors have observed that although the first integration tool bonding process flow 100 allows acceptable bonding between die and substrate, several of the processes included increase the risk of defects and contribute to reducing the bonding throughput. The inventors have found that by removing the risky processes, bonding performance can be improved while also increasing the bonding throughput. For example, in the second integration tool bonding process flow 200, component substrate 102 first undergoes a radiation process 112 before undergoing a degassing process 106. Component substrate 102 then undergoes a first plasma activation process 108, followed by a first wet cleaning process 104, and then an eject and pick process 114. Substrate 118 undergoes a second plasma activation process 122, followed by a second wet cleaning process 120 to prepare for bonding. Bonding process 116 places the die from component substrate 102 onto substrate 118 to result in a die-to-substrate bonded substrate 126.

[0025] The inventors further found that by removing additional risky processes, the bonding performance can be further improved, and at the same time, the bonding throughput can also be further increased. For example, in the third integration tool bonding process flow 300, before undergoing the first plasma activation process 108, the component substrate 102 first undergoes a radiation process 112. Subsequently, the component substrate 102 undergoes the first wet cleaning process 104 before undergoing the eject and pick process 114. The substrate 118 undergoes the second plasma activation process 122, and then undergoes the second wet cleaning process 120 to prepare for bonding. The bonding process 116 places the die from the component substrate 102 onto the substrate 118 to produce a die-to-substrate bonded substrate 126.

[0026] The inventors also found that by removing more risky processes, the bonding performance can be further improved, and at the same time, the bonding throughput can be increased to a higher level. For example, in the fourth integration tool bonding process flow 400, the component substrate 102 first undergoes a radiation process 112 before undergoing the first wet cleaning process 104. The component substrate 102 then undergoes the eject and pick process 114. The substrate 118 undergoes the second plasma activation process 122, and then undergoes the second wet cleaning process 120 to prepare for bonding. The bonding process 116 places the die from the component substrate 102 onto the substrate 118 to produce a die-to-substrate bonded substrate 126.

[0027] Figure 5 For some embodiments, a method 500 for performing anhydrous hybrid bonding in an integration tool. The method 500 is based on, for example, Figure 2The second integration tool process flow shown. For the component substrate process flow and the substrate process flow, the hydration process is eliminated. In block 502, a radiation process is performed on the component substrate. The component substrate can be a framed substrate or a carrier having reconstituted grains (molded grains), etc., which is used to support and transport the grains for processing in the integration bonding tool. The radiation process can be, for example but not limited to, an ultraviolet (UV) process that weakens the adhesion bond between the grains and the component substrate. Although the radiation process weakens the bond between the grains and the component substrate, enabling the ejection and pick-up processes to be performed at a later stage, the weakened grain bond is sufficient to hold the grains in place for performing other processes until the ejection and pick-up process stage. In block 504, a degassing process is performed on the component substrate. The degassing process can include heating the component substrate to a sufficient temperature before any plasma treatment to allow moisture removal and degassing of the component substrate. In block 506, a plasma activation process is performed on the component substrate. Plasma activation helps to prepare the bonding surface of the grains on the component substrate for bonding. Generally, plasma activation has a limited duration within which it remains viable for bonding. In some cases, plasma activation lasts for about 7 hours to about 20 hours before reactivation is required.

[0028] In block 508, a wet cleaning process is performed on the component substrate to clean the grain bonding surface before bonding. The cleaner the bonding surface, the higher the bonding strength. In block 510, an ejection and pick-up process is performed to select (pick up) and remove (eject) the grains from the component substrate for bonding. This process can also include flipping the grains before bonding (e.g., see Figure 8 ). Before, after, or simultaneously with processing the component substrate (blocks 502 to 508), the substrate to which the grains are to be bonded also undergoes processing. In block 514, a plasma activation process is performed on the substrate. Plasma activation helps to prepare the bonding surface of the substrate for bonding. Generally, plasma activation has a limited duration within which it remains viable for bonding. In some cases, plasma activation lasts for about 7 hours to about 20 hours before reactivation is required. In block 516, a wet cleaning process is performed on the substrate to clean the substrate bonding surface before bonding. The cleaner the bonding surface, the higher the bonding strength. In block 512, the selected grains are placed on the substrate to be bonded to the substrate in a hybrid bonding process. Hybrid bonding is a bonding that combines at least two different materials together. For example, the dielectric material of the grains and the copper interconnects of the grains are bonded to the dielectric material of the substrate and the copper interconnects on the substrate. Generally, when the grains contact the dielectric surface of the substrate, the dielectric surfaces bond together. Subsequently, a subsequent annealing process can be used on the bonded grains and substrate to expand the copper in the copper interconnects such that the grains flow and bond together with the copper interconnects of the substrate.

[0029] Figure 6 Method 600 for performing hybrid bonding without hydration or degassing of component substrates in an integration tool, according to some embodiments. Method 600 is based on the third integration tool process flow as shown in Figure 3 For the component substrate processing flow and the substrate processing flow, the hydration process is eliminated, and the degassing process of the component substrate is eliminated together. Since wet cleaning is not performed before plasma processing, the degassing process for removing moisture reduces the efficiency of the bonding process and is removed from the process. In block 602, a radiation process is performed on the component substrate. The component substrate can be a framed substrate or a carrier having reconfigured grains (molded grains), etc., which is used to support and transport the grains for processing in an integration bonding tool. The radiation process can be, for example but not limited to, an ultraviolet (UV) process that weakens the adhesion bond between the grains and the component substrate. Although the radiation process weakens the bond between the grains and the component substrate, enabling ejection and pick-up processing at a later stage, the weakened grain bond is sufficient to hold the grains in place for other processing before the ejection and pick-up process stages.

[0030] In block 604, a plasma activation process is performed on the component substrate. Plasma activation helps to prepare the grain bonding surface on the component substrate for bonding. Generally, plasma activation has a limited duration within which it remains viable for bonding. In some cases, plasma activation lasts from about 7 hours to about 20 hours before reactivation is required. In block 606, a wet cleaning process is performed on the component substrate to clean the grain bonding surface before bonding. The cleaner the bonding surface, the higher the bonding strength. In block 608, an ejection and pick-up process is performed to select (pick up) and remove (eject) the grains from the component substrate for bonding. This process can also include flipping the grains before bonding (e.g., see Figure 8 ). Before, after, or simultaneously with processing the component substrate (blocks 602 to 606), the substrate to which the grains are to be bonded also undergoes processing. In block 612, a plasma activation process is performed on the substrate. Plasma activation helps to prepare the bonding surface of the substrate for bonding. Generally, plasma activation has a limited duration within which it remains viable for bonding. In some cases, plasma activation lasts from about 7 hours to about 20 hours before reactivation is required. In block 614, a wet cleaning process is performed on the substrate to clean the substrate bonding surface before bonding. The cleaner the bonding surface, the higher the bonding strength. In block 610, the selected grains are placed on the substrate to be bonded to the substrate in a hybrid bonding process. Subsequently, a subsequent annealing process can be used on the bonded grains and substrate.

[0031] Figure 7 According to some embodiments, a method 700 for hybrid bonding by performing only substrate activation in an integration tool. Method 700 is based on the fourth integration tool process flow as Figure 4 shown. For the component substrate processing flow and the substrate processing flow, the hydration process is eliminated, and together the degassing process and the plasma activation process of the component substrate are eliminated. Since plasma activation is not performed on the component substrate, the degassing process of removing moisture for plasma activation is significantly less relevant and is removed from the process. In block 702, a radiation process is performed on the component substrate. The component substrate can be a framed substrate or a carrier such as a reconstituted die (molded die) for supporting and transporting dies for processing in an integration bonding tool. The radiation process can be, for example but not limited to, an ultraviolet (UV) process that weakens the adhesion bond between the die and the component substrate. Although the radiation process weakens the bond between the die and the component substrate, enabling ejection and pick-up processing at a later stage, the weakened die bond is sufficient to hold the die in place for other processing before the ejection and pick-up processing stage.

[0032] In block 704, a wet cleaning process is performed on the component substrate to clean the die bonding surface before bonding. The cleaner the bonding surface, the higher the bonding strength. In block 706, an ejection and pick-up process is performed to select (pick up) and remove (eject) the die from the component substrate for bonding. This process can also include flipping the die before bonding (e.g., see Figure 8 ). Before, after, or simultaneously with processing the component substrate (blocks 702 to 704), the substrate to which the die is to be bonded also undergoes processing. In block 710, a plasma activation process is performed on the substrate. Plasma activation helps to prepare the bonding surface of the substrate for bonding. Generally, plasma activation has a limited duration within which it remains viable for bonding. In some cases, plasma activation lasts from about 7 hours to about 20 hours before reactivation is required. In block 712, a wet cleaning process is performed on the substrate to clean the substrate bonding surface before bonding. The cleaner the bonding surface, the higher the bonding strength. In block 708, the selected die is placed on the substrate to bond with the substrate in a hybrid bonding process. Subsequently, a subsequent annealing process can be used on the bonded die and substrate.

[0033] Figure 9A schematic top view of a multi-chamber processing tool 900 (integrated hybrid bonding tool) for bonding dies to a substrate, showing at least some embodiments in accordance with the principles of the present invention, is presented. The above-described methods and processes can be carried out using the multi-chamber processing tool 900. The multi-chamber processing tool 900 generally includes an equipment front end module (EFEM) 902 and a plurality of automated modules 910 serially coupled to the EFEM 902. The plurality of automated modules 910 are configured to shuttle one or more types of substrates 912 from the EFEM 902 through the multi-chamber processing tool 900 and perform one or more processing steps on one or more types of substrates 912 (e.g., component substrates having dies, substrates to which dies are to be bonded, etc.). Each of the plurality of automated modules 910 generally includes a transfer chamber 916 and one or more processing chambers 906 coupled to the transfer chamber 916 to perform one or more processes. The plurality of automated modules 910 are coupled to each other through their respective transfer chambers 916 to provide modular scalability and customization of the multi-chamber processing tool 900. As Figure 9 shown, the plurality of automated modules 910 include three automated modules, where the first automated module 910a is coupled to the EFEM 902, the second automated module 910b is coupled to the first automated module 910a, and the third automated module 910c is coupled to the second automated module 910b.

[0034] The EFEM 902 includes a plurality of load ports 914 for receiving one or more types of substrates 912. In some embodiments, the one or more types of substrates 912 include 200 mm wafers, 300 mm wafers, 450 mm wafers, framed substrates, carrier substrates with or without reconfigured dies, silicon substrates, glass substrates, etc. In some embodiments, the plurality of load ports 914 include at least one of one or more first load ports 914a for receiving a first type of substrate 912a or one or more second load ports 914b for receiving a second type of substrate 912b. In some embodiments, the first type of substrate 912a has a different size from the second type of substrate 912b. In some embodiments, the second type of substrate 912b includes a framed substrate or a carrier substrate. In some embodiments, the second type of substrate 912b includes a plurality of dies disposed on a frame or a carrier plate. In some embodiments, the second type of substrate 912b can hold different types and sizes of dies. Thus, one or more of the second load ports 914b can have different sizes or receiving surfaces configured to load the second type of substrate 912b having different sizes. In some embodiments, the plurality of load ports 914 are arranged along a common side of the EFEM 902. Although Figure 9A pair of first load ports 914a and a pair of second load ports 914b are shown, but the EFEM 902 can include other combinations of load ports, such as one first load port 914a and three second load ports 914b.

[0035] In some embodiments, the EFEM 902 includes a scan station 908 having a substrate ID reader for scanning one or more types of substrates 912 to obtain identification information. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The multi-chamber processing tool 900 is configured to use any identification information from the one or more types of substrates 912 being scanned to determine processing based on the identification information, such as different processes and / or placements for a first type of substrate 912a and a second type of substrate 912b. In some embodiments, the scan station 908 can also be configured for rotational movement to align the first type of substrate 912a or the second type of substrate 912b. In some embodiments, one or more of the plurality of automation modules 910 include the scan station 908. The EFEM robot 904 is disposed within the EFEM 902 and is configured to transport the first type of substrate 912a and the second type of substrate 912b between the plurality of load ports 914 to the scan station 908. The EFEM robot 904 can include a substrate end effector for handling the first type of substrate 912a and a second end effector for handling the second type of substrate 912b. The EFEM robot 904 can rotate, or rotate and move linearly.

[0036] The transfer chamber 916 contains a buffer 920 configured to hold one or more first type of substrates 912a. In some embodiments, the buffer 920 is configured to hold one or more of the first type of substrates 912a and one or more of the second type of substrates 912b. The transfer chamber 916 includes a transfer robot 926 configured to transfer the first type of substrate 912a and the second type of substrate 912b between the buffer 920, one or more processing chambers 906, and buffers in adjacent automation modules of the plurality of automation modules 910. For example, the transfer robot 926 in the first automation module 910a is configured to transfer the first type of substrate 912a and the second type of substrate 912b between the buffer 920 in the first automation module 910a and the second automation module 910b. In some embodiments, the buffer 920 is disposed within the interior volume of the transfer chamber 916, advantageously reducing the footprint of the entire tool. Additionally, the buffer 920 can be accessed from the interior volume of the transfer chamber 916 to facilitate easy access by the transfer robot 926.

[0037] One or more processing chambers 906 may include an atmospheric chamber configured to operate at atmospheric pressure and a vacuum chamber configured to operate at vacuum pressure. Examples of atmospheric chambers may generally include wet cleaning chambers, radiation chambers, heating chambers, metrology chambers, bonding chambers, etc. Examples of vacuum chambers may include plasma activation chambers. If desired, the above types of atmospheric chambers may also be configured to operate under vacuum. One or more processing chambers 906 may be any processing chamber or module required to perform bonding processes, cleaning processes, radiation processes, etc. In some embodiments, one or more of the processing chambers 906 of each of the plurality of automation modules 910 include at least one of a wet cleaning chamber 922, a plasma activation chamber 930, a degassing chamber 932, a radiation chamber 934, or a bonding chamber 940, such that the multi-chamber processing tool 900 includes at least one wet cleaning chamber 922, at least one plasma activation chamber 930, at least one degassing chamber 932, at least one radiation chamber 934, and at least one bonding chamber 940. One or more processing chambers 906 may be arranged in any suitable location of the multi-chamber processing tool 900.

[0038] The wet cleaning chamber 922 is used to perform a wet cleaning process to clean one or more types of substrates 912 with a fluid (such as water). The wet cleaning chamber 922 may include a first wet cleaning chamber 922a for cleaning a first type of substrate 912a or a second wet cleaning chamber 922b for cleaning a second type of substrate 912b. The degassing chamber 932 is configured to perform a degassing process to remove moisture via, for example, a high-temperature baking process. In some embodiments, the degassing chamber 932 includes a first degassing chamber 932a and a second degassing chamber 932b. The plasma activation chamber 930 may be configured to perform an activation process on the substrate to prepare for hybrid bonding. Activation helps increase the bonding strength between surfaces. In some embodiments, the plasma activation chamber 930 includes a first plasma activation chamber 930a and a second plasma activation chamber 930b. The radiation chamber 934 is configured to perform a radiation process to reduce the adhesion between grains on a component substrate, such as a framed substrate or a carrier substrate having reconfigured grains. For example, the radiation chamber 934 may be an ultraviolet radiation chamber configured to direct ultraviolet radiation to the component substrate, or a heating chamber configured to heat the component substrate. Reducing the adhesion force between the grains and the component substrate helps make it easier to remove the grains 206 from the component substrate. The bonding chamber 940 is configured to transfer and bond at least a portion of the grains from the component substrate to the substrate. The bonding chamber 940 generally includes a first support 942 for supporting one of the first type of substrates 912a and a second support 944 for supporting one of the second type of substrates 912b.

[0039] In some embodiments, the last automation module of the plurality of automation modules 910, for exampleFigure 9 The third automation module 910c, including one or more bonding chambers 940 ( Figure 9 two are shown in). In some embodiments, the first of the two bonding chambers is configured to remove and bond die having a first size, and the second of the two bonding chambers is configured to remove and bond die having a second size. In some embodiments, any one of the plurality of automation modules 910 includes a metrology chamber 918 configured to measure one or more types of substrates. In Figure 9 , the metrology chamber 918 is shown as part of the second automation module 910b, which is coupled to the transfer chamber 916 of the second automation module 910b. However, the metrology chamber 918 can be coupled to any transfer chamber 916 or within the transfer chamber 916.

[0040] The controller 980 controls the operation of any multi-chamber processing tool described herein, including the multi-chamber processing tool 900. The controller 980 can use direct control of the multi-chamber processing tool 900 or, alternatively, by controlling a computer (or controller) associated with the multi-chamber processing tool 900. In operation, the controller 980 is capable of collecting data and feedback from the multi-chamber processing tool 900 to optimize the performance of the multi-chamber processing tool 900 and control the processing flow according to the methods described herein. The controller 980 generally includes a central processing unit (CPU) 982, a memory 984, and support circuitry 986. The CPU 982 can be any form of general-purpose computer processor suitable for use in an industrial environment. The support circuitry 986 is coupled to the CPU 982 in a conventional manner and can include a cache, a clock circuit, an input / output subsystem, a power supply, and the like. Software routines such as the methods described above can be stored in the memory 984 and, when executed by the CPU 982, transform the CPU 982 into a dedicated computer (controller 980). The software routines can also be stored and / or executed by a second controller (not shown) remote from the multi-chamber processing tool 900.

[0041] The memory 984 is in the form of a computer-readable storage medium that contains instructions which, when executed by the CPU 982, facilitate the operation of semiconductor processes and devices. The instructions in the memory 984 are in the form of a program product, such as a program for the method implementing the present principles. The program code can conform to any one of a variety of different programming languages. In one example, the present disclosure can be implemented as a program product stored on a computer-readable storage medium for use in a computer system. The program of the program product defines the functions of these aspects (including the methods described herein). Illustrative computer-readable storage media include, but are not limited to: non-writable storage media on which information is persistently stored (e.g., read-only memory devices within a computer, such as a CD-ROM disk readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory); and writable storage media on which variable information is stored (e.g., a floppy disk in a floppy disk drive or a hard disk drive or any type of solid-state random-access semiconductor memory). Such a computer-readable storage medium, when carrying computer-readable instructions that direct the functions of the methods described herein, is an aspect of the principles of the present invention.

[0042] Embodiments in accordance with the principles of the present invention can be implemented in hardware, firmware, software, or any combination thereof. Embodiments can also be implemented as instructions stored on one or more computer-readable media that can be read and executed by one or more processors. The computer-readable media can include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing platform or a "virtual machine" running on one or more computing platforms). For example, the computer-readable media can include any suitable form of volatile or non-volatile memory. In some embodiments, the computer-readable media can include non-transitory computer-readable media.

[0043] Although the foregoing is directed to embodiments of the principles of the present invention, other and further embodiments of the principles of the present invention can be devised without departing from its basic scope.

Claims

1. A method for bonding die to a substrate, comprising: Performing a radiation process on a component substrate having a plurality of die to weaken the adhesive bond of the plurality of die to the surface of the component substrate; After the radiation process, performing a first wet cleaning process on the component substrate to clean at least one die bonding surface; After performing the first wet cleaning process, performing an eject and pick process to remove at least one of the plurality of die from the component substrate for bonding to the substrate; Performing a plasma activation process on the substrate; After the plasma activation process, performing a second wet cleaning process on the substrate to clean the substrate bonding surface of the substrate; And Performing a hybrid bonding process to bond the at least one die bonding surface of the at least one of the plurality of die to the substrate bonding surface of the substrate.

2. The method of claim 1, further comprising: Performing a plasma activation process on the component substrate after the radiation process of the component substrate and before performing the first wet cleaning process on the component substrate.

3. The method of claim 2, further comprising: Performing a degassing process on the component substrate after the radiation process of the component substrate and before performing the plasma activation process on the component substrate.

4. The method of claim 1, wherein the radiation process comprises irradiating the component substrate with ultraviolet radiation.

5. The method of claim 1, performed in an integrated hybrid bonding tool.

6. The method of claim 1, wherein the component substrate is a framed substrate.

7. The method of claim 1, wherein the component substrate is a carrier substrate having reconfigured die.

8. The method of claim 1, wherein the substrate is a silicon or glass-supported silicon substrate.

9. The method of claim 8, wherein the substrate has stacked die from a previous bonding process.

10. A hybrid bonding tool for bonding die to a substrate, the hybrid bonding tool comprising: At least one radiation chamber; At least one wet cleaning chamber; At least one plasma activation chamber; At least one hybrid bonding chamber; And A controller of the hybrid bonding tool configured to bond die to a substrate by performing the following operations: In the at least one radiation chamber, a radiation process on a component substrate having a plurality of die to weaken the adhesive bond of the plurality of die to the surface of the component substrate; After the radiation process, in the at least one wet cleaning chamber, a first wet cleaning process on the component substrate to clean at least one die bonding surface; After performing the first wet cleaning process, an eject and pick process in the at least one hybrid bonding chamber to remove at least one of the plurality of die from the component substrate for bonding to the substrate; In the at least one plasma activation chamber, a plasma activation process on the substrate; After the plasma activation process on the substrate, a second wet cleaning process in the at least one wet cleaning chamber to clean the substrate bonding surface of the substrate; And A hybrid bonding process in the at least one hybrid bonding chamber to bond the at least one die bonding surface of the at least one die among the plurality of dies to the substrate bonding surface of the substrate.

11. The hybrid bonding tool according to claim 10, wherein the controller is configured to bond a die to a substrate by further performing the following: After the radiation process on the component substrate and before performing the first wet cleaning process on the component substrate, a plasma activation process on the component substrate in the at least one plasma activation chamber.

12. The hybrid bonding tool according to claim 11, further comprising: At least one degassing chamber, wherein the controller is configured to bond a die to a substrate by further performing the following: After the radiation process on the component substrate and before performing the plasma activation process on the component substrate, a degassing process on the component substrate in the at least one degassing chamber.

13. The hybrid bonding tool according to claim 10, wherein the radiation process includes irradiating the component substrate with ultraviolet radiation.

14. A non-transitory computer-readable medium having stored thereon instructions that, when executed, cause a method for bonding dies to a wafer to be performed, the method comprising: Performing a radiation process on a component substrate having a plurality of dies to weaken the adhesive bonding of the plurality of dies to the surface of the component substrate; After the radiation process, performing a first wet cleaning process on the component substrate to clean at least one die bonding surface; After performing the first wet cleaning process, performing an eject and pick process to remove at least one die among the plurality of dies from the component substrate for bonding to a substrate; Performing a plasma activation process on the substrate; After the plasma activation process, performing a second wet cleaning process on the substrate to clean the substrate bonding surface of the substrate; And Performing a hybrid bonding process to bond the at least one die bonding surface of the at least one die among the plurality of dies to the substrate bonding surface of the substrate.

15. The non-transitory computer-readable medium according to claim 14, the method further comprising: After the radiation process on the component substrate and before performing the first wet cleaning process on the component substrate, performing a plasma activation process on the component substrate.

16. The non-transitory computer-readable medium according to claim 15, the method further comprising: After the radiation process on the component substrate and before performing the plasma activation process on the component substrate, performing a degassing process on the component substrate.

17. The non-transitory computer-readable medium according to claim 14, wherein the radiation process includes irradiating the component substrate with ultraviolet radiation.

18. The non-transitory computer-readable medium according to claim 14, wherein the component substrate is a framed substrate.

19. The non-transitory computer-readable medium according to claim 14, wherein the component substrate is a carrier substrate having reconfigured grains.

20. The non-transitory computer-readable medium according to claim 14, wherein the substrate is a silicon or glass-supported silicon substrate, with or without stacked grains from a previous bonding process.

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