Grinding technology based on polycrystalline-like diamond abrasive and monocrystalline diamond abrasive and application of grinding technology

Abstract

The invention discloses a grinding technology based on a polycrystalline-like diamond grinding material and a single crystal diamond grinding material and an application scheme of the grinding technology. The grinding technology comprises a complex composite structure of the polycrystalline-like diamond grinding material, accurate geometric parameter design of the single crystal diamond grinding material and optimal configuration of a consolidated single diamond grinding material grinding pad. Through the innovative abrasive material preparation process, grinding pad design and process parameter control, the grinding efficiency, the surface smoothness and the material heat management performance are remarkably improved, and the method is suitable for the fields of semiconductors, optical devices and high-end manufacturing. The high-precision machining requirement can be met, and the heat management capacity can be optimized.

Description

Technical Field

[0001] The present invention belongs to the technical fields of precision machining and semiconductor materials, and particularly relates to a grinding technology based on polycrystalline diamond-like abrasive and single-crystal diamond abrasive and its application in high-precision machining and thermal management optimization. Background Art

[0002] In the fields of modern industrial manufacturing and material processing, high-precision and high-efficiency processing equipment and technical solutions are important guarantees for the production of high-quality products. Especially in the processing of hard materials such as silicon carbide (SiC), the performance requirements for processing equipment are particularly strict. Currently, related technologies mainly rely on traditional mechanical processing methods or simple automated control means, but these methods often show many deficiencies under complex working conditions. For example, during the processing, due to insufficient rigidity of the equipment or slow response speed of the control system, it is easy to cause a decline in the quality of the processed surface, difficulty in ensuring dimensional accuracy, and even problems such as material damage. In addition, the processing parameter adjustment ability in the existing technology is limited and cannot be adjusted in real time according to material characteristics and processing requirements, further restricting its application in high-precision machining scenarios.

[0003] At the same time, the existing processing systems also have problems of high energy consumption and low efficiency during operation. Especially in the process of multi-process continuous processing, due to poor coordination between processes, it is easy to lead to low processing efficiency and resource waste. In addition, the tool wear monitoring and compensation mechanism in the existing technology is not perfect enough to realize real-time monitoring and automatic adjustment of the tool state, thus affecting the stability and consistency of the processing process. These problems not only increase the production cost but also reduce the market competitiveness of products.

[0004] In specific processing technologies, for the processing of hard and brittle materials such as silicon carbide, the existing technology usually adopts a single cutting method or fixed parameter configuration, and this mode is difficult to meet the processing requirements of different material characteristics and complex geometries. Especially under high-load conditions, the accelerated wear of the tool will cause the quality of the processed surface to decline rapidly, and the existing tool compensation technology often relies on manual intervention and lacks intelligent and automated solutions. Therefore, how to design a processing system that can achieve high efficiency, precision, and strong adaptability has become an urgent technical problem to be solved.

[0005] In summary, the existing technology still has significant deficiencies in terms of processing efficiency, precision control, energy consumption optimization, and intelligent level. To solve the above problems, developing a new technical solution with high rigidity, high precision, and intelligent processing ability has important practical significance and broad application prospects. The purpose of the present invention is to overcome the limitations of the existing technology through innovative design and technical improvement, so as to meet the urgent needs of modern industry for high-performance processing equipment. Summary of the Invention

[0006] In view of the deficiencies of existing grinding technologies in high-precision machining and thermal management performance optimization, the present invention provides a grinding technology and its application solution based on polycrystalline diamond-like abrasives and single-crystal diamond abrasives. Through innovative abrasive structure design, optimized configuration of consolidated single-crystal diamond abrasive pads, and precise control of process parameters, the technology solves the problems of low efficiency, poor surface finish, and insufficient thermal management performance in traditional grinding technologies.

[0007] The present invention provides a grinding technology solution based on polycrystalline diamond-like abrasives and single-crystal diamond abrasives, including the following: The polycrystalline diamond-like abrasives are formed by the staggered overlap of multiple irregular geometric shapes to form a complex composite body, with multiple contact surfaces and cutting edges; the single-crystal diamond abrasives exhibit a single hexagonal or approximately hexagonal geometric shape, with a simple structure and clear edges. Further, in the preparation process of the polycrystalline diamond-like abrasives, the pressure range is set to 0.6 MPa to 0.8 MPa, and the temperature range is set to 1100 °C to ensure the integrity and performance stability of the abrasive crystals. In particular, in the preparation process of the single-crystal diamond abrasives, the diameter range is set to 150.0 mm ± 0.1 mm, the thickness range is set to 500 μm, the total thickness variation (TTV) ≤ 10 μm, and the surface roughness ≤ 30 μm to meet the requirements of high-precision machining.

[0008] Further, the present invention provides a design solution for a consolidated single-crystal diamond abrasive pad. The abrasive pad is in the shape of a circular disc, with concentric circular ring patterns on its surface, and the consolidated single-crystal diamond abrasives are evenly distributed on the surface of the abrasive pad. Among them, the diamond abrasives are distributed on the pad surface in different shapes such as triangles and trapezoids, arranged in a specific order to form diverse grinding paths. In particular, the rotational speed range of the abrasive pad is set to 30 rpm to 50 rpm, the applied pressure range is set to 30 kg to 150 kg, and the coolant flow rate range is set to 50 ml / min to 120 ml / min to ensure a uniform material removal rate and effectively reduce the thermal effect during the machining process.

[0009] Further, the present invention also includes a method for optimizing the thermal conductivity of a new semiconductor material. The method uses a line graph to show the changing trend of the thermal conductivity of the new semiconductor material over time. Initially, the thermal conductivity rises rapidly, then gradually levels off, and finally reaches a relatively stable level. In particular, the thermal conductivity optimization method uses a dynamic measurement system to record the thermal conductivity of the material at different time points during the heating process, and obtains the variation law of the thermal conductivity through data fitting analysis. Further, the application scenarios of the thermal conductivity optimization method cover the evaluation of thermal management performance in high-temperature environments, providing a basis for material design and application scenario optimization.

[0010] Furthermore, the application fields of the present invention cover the processing of high-precision components in high-end manufacturing fields such as aerospace and the automotive industry, the grinding and polishing of silicon wafers and other semiconductor materials during the chip manufacturing process, and the processing requirements of high-precision optical components such as optical lenses and lasers. In particular, in practical applications, the technical solution can flexibly adapt to different materials and surface characteristics by adjusting the abrasive distribution, polishing pad parameters, and coolant flow rate, thereby providing customized grinding solutions.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows: The combination of polycrystalline diamond-like abrasives and consolidated single-crystal diamond abrasive polishing pads significantly improves the grinding efficiency and surface finish; the stable cutting force and directionality of single-crystal diamond abrasives meet the requirements of high-precision processing; the optimized thermal conductivity of the new semiconductor material enhances its thermal management ability in high-temperature environments; by precisely controlling the process parameters, the quality stability and consistency of the abrasives and polishing pads are ensured. In particular, the technical solution realizes the efficient coordination of abrasive preparation, polishing pad design, and semiconductor material optimization through multi-level process parameter control, thereby meeting the diverse needs of high-end manufacturing, the semiconductor industry, and the optical device field. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a comparison schematic diagram of polycrystalline diamond-like abrasives and single-crystal diamond abrasives; Figure 2 It is a comparison schematic diagram of a consolidated single-crystal diamond abrasive polishing pad and the diamond abrasives on the surface of the pad; Figure 3 It is a broken line graph of the changing trend of the thermal conductivity of the new semiconductor material.

[0013] The reference numerals are as follows: 1. Polycrystalline diamond-like abrasive; 2. Single-crystal diamond abrasive; 3. Consolidated single-crystal diamond abrasive polishing pad; 4. Diamond abrasives on the surface of the pad; 5. Broken line graph of the changing trend of thermal conductivity. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0014] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0015] The specific implementation manner of the present invention is combined with the attached Figure 1 to the attached Figure 3and each Arabic numeral label in the drawings is used to elaborate on the technical solution in detail. The following content further elaborates on the implementation process, operating principle, and application scenarios of the present invention based on the technical key points in the invention content.

[0016] As Figure 1 shown, the polycrystalline diamond-like abrasive 1 and the single-crystal diamond abrasive 2 respectively exhibit two different types of abrasive structural characteristics. The polycrystalline diamond-like abrasive 1 is formed by the staggered overlap of multiple irregular geometric shapes to form a complex composite body, with multiple contact surfaces and cutting edges. In its preparation process, the pressure range is set to 0.6 MPa to 0.8 MPa, and the temperature range is set to 1100 °C. The selection of these parameters ensures the integrity and performance stability of the abrasive crystals in a high-temperature and high-pressure environment, while improving the wear resistance and cutting efficiency of the abrasive. The single-crystal diamond abrasive 2 presents a single hexagonal or approximately hexagonal geometric shape, with a simple structure and clear edges. In its preparation process, the diameter range is set to 150.0 mm ± 0.1 mm, the thickness range is set to 500 μm, the total thickness variation (TTV) ≤ 10 μm, and the surface roughness ≤ 30 μm. The selection of the above parameters enables the single-crystal diamond abrasive 2 to provide a stable cutting force and directionality in high-precision machining, meeting the requirements of precision component machining.

[0017] The design of the consolidated single-crystal diamond abrasive grinding pad 3 is as Figure 2 shown. Its surface has concentric circular ring patterns, and the consolidated single-crystal diamond abrasives are evenly distributed on the surface of the grinding pad. The grinding pad is in the shape of a circular disc, with a diameter range set to 150.0 mm ± 0.1 mm, a thickness range set to 500 μm, and a surface roughness ≤ 30 μm. The diamond abrasives are distributed on the surface of the pad in different shapes such as triangles and trapezoids, and are arranged in a specific order to form diverse grinding paths. This design not only improves the material removal rate but also significantly improves the surface finish of the processed surface. During the actual operation process, the rotational speed range of the grinding pad is set to 30 rpm to 50 rpm, the applied pressure range is set to 30 kg to 150 kg, and the coolant flow rate range is set to 50 ml / min to 120 ml / min. The precise control of these parameters is adjusted in real time through a dynamic measurement system to ensure that the thermal effect during the machining process is effectively suppressed, thereby improving the machining efficiency and quality.

[0018] The method for optimizing the thermal conductivity of the new semiconductor material is through Figure 3An explanation is given for the line graph 5 showing the trend of thermal conductivity change. The line graph 5 shows the trend of thermal conductivity changing with time. In the initial stage, the thermal conductivity rises rapidly, then gradually levels off, and finally reaches a relatively stable level. This method uses a dynamic measurement system to record the thermal conductivity of the material at different time points during the heating process, and obtains the law of thermal conductivity change through data fitting analysis. The operating principle of the dynamic measurement system includes real-time monitoring of the surface temperature distribution of the material, the internal heat flux density, and the change of the external environment temperature, using high-precision sensors to collect relevant data and transmit it to the data processing unit. The data processing unit generates a trend curve of thermal conductivity changing with time by filtering, denoising, and fitting analysis of the collected data. The application scenarios of this method cover the evaluation of thermal management performance in high-temperature environments, providing a scientific basis for material design and application scenario optimization.

[0019] In practical applications, the technical solution of the present invention can be widely applied to the processing of high-precision components in high-end manufacturing fields such as aerospace and the automotive industry. For example, in the aerospace field, the processing of engine turbine blades requires extremely high surface finish and dimensional accuracy. By using the polycrystalline diamond-like abrasive 1 and the monocrystalline diamond abrasive consolidation pad 3 provided by the present invention, the processing efficiency and surface quality can be significantly improved. First, the polycrystalline diamond-like abrasive 1 is fixed on the grinding equipment, the pressure is set to 0.7 MPa, the temperature is 1100 °C, and preliminary rough machining is carried out; subsequently, the monocrystalline diamond abrasive consolidation pad 3 is replaced, the rotation speed is adjusted to 40 rpm, the pressure is applied to 100 kg, and the coolant flow rate is 80 ml / min for finish machining. During this process, the dynamic measurement system real-time monitors the processing surface temperature and the material removal rate to ensure that the processing parameters always remain within the optimal range. The surface roughness of the finally processed turbine blade is ≤10 μm, and the dimensional accuracy reaches ±5 μm, fully meeting the strict requirements for components in the aerospace field.

[0020] The grinding and polishing of silicon wafers and other semiconductor materials during the chip manufacturing process can also adopt the technical solution of the present invention. The specific operation steps are as follows: S1, the single-crystal diamond abrasive 2 is fixed on the grinding equipment, the diameter is set to 150.0 mm, the thickness is 500 μm, and the surface roughness is ≤30 μm for preliminary grinding; S2, the monocrystalline diamond abrasive consolidation pad 3 is replaced, the rotation speed is adjusted to 45 rpm, the pressure is applied to 120 kg, and the coolant flow rate is 100 ml / min for fine polishing; S3, the dynamic measurement system real-time monitors the surface temperature of the silicon wafer and the material removal rate to ensure that the processing parameters are always in the best state. The total thickness variation (TTV) of the finally processed silicon wafer is ≤5 μm, and the surface roughness is ≤10 μm, fully meeting the high-precision requirements for silicon wafers in chip manufacturing.

[0021] The processing requirements of high-precision optical components such as optical lenses and lasers can also be met by the technical solution of the present invention. For example, when processing high-precision optical lenses, first use polycrystalline diamond-like abrasive 1 for rough machining, set the pressure to 0.8 MPa and the temperature to 1100 °C; then replace it with a consolidated single-crystal diamond abrasive grinding pad 3, adjust the rotational speed to 50 rpm, apply a pressure of 150 kg, and the coolant flow rate to 120 ml / min for finish machining. During this process, the dynamic measurement system monitors the surface temperature and material removal rate of the lens in real time to ensure that the processing parameters always remain within the optimal range. The finally processed optical lens has a surface roughness ≤ 5 μm and a dimensional accuracy of ±2 μm, fully meeting the high requirements of optical components for surface quality and dimensional accuracy.

[0022] The technical effects of the present invention are reflected in the following aspects: By combining polycrystalline diamond-like abrasive 1 and consolidated single-crystal diamond abrasive grinding pad 3, the grinding efficiency and surface finish are significantly improved; the stable cutting force and directionality of single-crystal diamond abrasive 2 meet the requirements of high-precision machining; the optimized thermal conductivity of the new semiconductor material enhances its thermal management ability in high-temperature environments; by precisely controlling the process parameters, the quality stability and consistency of the abrasive and grinding pad are ensured. In particular, the technical solution realizes the efficient coordination of abrasive preparation, grinding pad design, and semiconductor material optimization through multi-level process parameter control, thereby meeting the diverse needs of high-end manufacturing, the semiconductor industry, and the optical device field.

[0023] The application fields of the present invention cover the processing of high-precision parts in high-end manufacturing fields such as aerospace and the automotive industry, the grinding and polishing of silicon wafers and other semiconductor materials during chip manufacturing, and the processing requirements of high-precision optical components such as optical lenses and lasers. In particular, the technical solution can be flexibly adapted to different materials and surface characteristics in practical applications by adjusting the abrasive distribution, grinding pad parameters, and coolant flow rate, thereby providing customized grinding solutions.

[0024] Although the embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A grinding technical solution based on polycrystalline diamond-like abrasive and single crystal diamond abrasive, characterized in that: The polycrystalline diamond-like abrasive (1) is formed by the overlapping of multiple irregular geometric shapes to form a complex composite, with multiple contact surfaces and cutting edges; the single-crystal diamond abrasive (2) presents a single hexagonal or approximately hexagonal geometric shape, with a simple structure and clear edges.

2. A grinding technical solution based on polycrystalline diamond-like abrasive and single-crystal diamond abrasive according to claim 1, characterized in that: In the preparation process of the polycrystalline diamond-like abrasive (1), the pressure range is set to 0.6 MPa to 0.8 MPa, and the temperature range is set to 1100 °C.

3. A grinding technical solution based on polycrystalline diamond-like abrasive and single crystal diamond abrasive as described in claim 2, characterized in that: The diameter range of the single-crystal diamond abrasive (2) is set to 150.0 mm ± 0.1 mm, the thickness range is set to 500 μm, the total thickness variation (TTV) ≤ 10 μm, and the surface roughness ≤ 30 μm.

4. A grinding technical solution based on polycrystalline diamond-like abrasive and single crystal diamond abrasive as described in claim 1, characterized in that: It also includes a consolidated single-crystal diamond abrasive polishing pad (3). The polishing pad is in a circular disc shape, with concentric circular ring patterns on the surface, and the consolidated single-crystal diamond abrasives are evenly distributed on the surface of the polishing pad.

5. A grinding technical solution based on polycrystalline diamond-like abrasive and single-crystal diamond abrasive as described in claim 4, characterized in that: The rotation speed range of the consolidated single-crystal diamond abrasive polishing pad (3) is set to 30 rpm to 50 rpm, the applied pressure range is set to 30 kg to 150 kg, and the coolant flow rate range is set to 50 ml / min to 120 ml / min.

6. A grinding technical solution based on polycrystalline diamond-like abrasive and single-crystal diamond abrasive according to claim 1, characterized in that: It also includes a method for optimizing the thermal conductivity of a new semiconductor material. The method records the thermal conductivity of the material at different time points during the heating process through a dynamic measurement system, and obtains the variation law of the thermal conductivity through data fitting analysis.

7. A grinding technical solution based on polycrystalline diamond-like abrasive and single crystal diamond abrasive as described in claim 6, characterized in that: The dynamic measurement system monitors the surface temperature distribution, internal heat flux density, and external environment temperature change of the material in real time, and uses high-precision sensors to collect relevant data and transmit them to the data processing unit.

8. A grinding technical solution based on polycrystalline diamond-like abrasive and single-crystal diamond abrasive as described in claim 4, characterized in that: The diamond abrasives on the surface of the consolidated single-crystal diamond abrasive polishing pad (3) are distributed on the pad surface in a triangular or trapezoidal shape and arranged in a specific order to form diverse polishing paths.

Images