Novel indium tin oxide target material with low nodulation and high film yield and preparation method thereof

Abstract

The invention relates to the technical field of target materials, in particular to a novel indium tin oxide target material with low nodulation and high film yield and a preparation method thereof. The target material is prepared by compositely doping gallium oxide and cobalt oxide and combining a multi-stage controlled atmosphere sintering process. Through synergistic doping of gallium oxide and cobalt oxide and in combination with a gradient sintering process, the secondary phase resistivity is effectively reduced, grain size refinement is realized, the electrical conductivity of the target material is greatly improved, the occurrence rate of magnetron sputtering nodulation is greatly reduced, the residual sand rate of film etching is effectively reduced, and the visible light transmittance of the prepared film is improved to 91.44%; the method is suitable for the fields of touch screens, displays, solar cells and the like.

Description

Technical Field

[0001] The present invention relates to the technical field of target materials, and particularly to a novel indium tin oxide target with low nodulation and high thin film yield and a preparation method thereof. Background Art

[0002] ITO (Indium Tin Oxide) is a transparent conductive material widely used in fields such as touch screens, displays, and solar cells. With the growing demand for transparent conductive materials in fields such as display technology, touch screen technology, and solar cell technology, ITO targets, as an important transparent conductive material, have received extensive attention due to their high transparency, low resistivity, and excellent thermal stability. Traditional ITO targets are mainly composed of oxides of indium (In) and tin (Sn), and have excellent electrical and optical properties, and are the key raw materials for manufacturing devices such as liquid crystal displays, touch screens, and solar cells.

[0003] However, with the continuous progress of technology and the increasing demand for electronic devices, especially the rapid development in fields such as high-definition displays, efficient energy conversion, and touch screens, higher requirements are put forward for the quality and performance of ITO targets. Traditional ITO targets often have problems such as uneven distribution of secondary phases and high resistivity of secondary phases, which also affect the overall performance of the targets. During the magnetron sputtering thin film production process, poisoning and nodulation are likely to occur. On the one hand, it leads to a decrease in the quality of the thin film, and on the other hand, it greatly affects the production efficiency, thereby increasing the production cost of indium tin oxide thin films. At the same time, traditional ITO thin films also have disadvantages such as a large amount of residual sand in etching and unclear etching boundaries; limited transmittance in the visible light range.

[0004] To solve these problems, the prior art has adopted various means, but all have certain limitations. On the one hand, by optimizing the preparation process of the target, such as increasing the sintering temperature, prolonging the holding time, etc., although the film performance can be further improved by increasing the relative density of the target, it will lead to an extended preparation cycle, increased energy consumption, a decrease in the yield of the target itself during preparation, and at the same time, it will also have a certain negative impact on the conductivity and optical properties of the target. On the other hand, by adding yttrium elements (CN117362005A), high-valent metal elements such as molybdenum, tungsten, chromium, tantalum, niobium, vanadium, etc. (CN116730710A), rare earth elements (CN117362006A), SnF2 (CN114807856A), etc. to improve the performance of ITO targets, although it can solve some problems to a certain extent, the introduction of these additives is either high in price, or highly toxic, or damages the intrinsic properties of ITO targets, restricting their application in some high-demand fields, and none of them point out the impact on the secondary phase of the target, as well as the verification and solution measures for the problem of poisoning and nodulation. Moreover, the problems such as etching residue sand, low yield, and Partice (particles) on the film surface that may exist during the film preparation process are rarely mentioned.

[0005] In view of these problems, the present invention proposes an innovative solution, that is, on the basis of optimizing the target preparation process, a novel indium tin oxide target with low nodulation and high film yield is prepared by a doping method. Summary of the Invention

[0006] In view of this, the object of the present invention is to provide a novel indium tin oxide target with low nodulation and high film yield and its preparation method to solve the problems that the traditional ITO target has uneven secondary phase distribution and high secondary phase resistivity, resulting in the overall performance of the target being affected, and it is prone to the phenomenon of poisoning and nodulation during the magnetron sputtering film production process.

[0007] Based on the above object, the present invention provides a preparation method for a novel indium tin oxide target with low nodulation and high film yield, including the following steps:

[0008] (1) Ball-mill gallium oxide powder and cobalt oxide powder, and add pure water, and stir at a speed of 400 - 900 rpm for 12 - 24 h to obtain slurry 1;

[0009] (2) Gradually add indium oxide powder and tin oxide powder to slurry 1 for ball-milling, and add pure water, and stir at a speed of 400 - 900 rpm for 12 - 48 h to obtain slurry 2;

[0010] (3) Dry and granulate slurry 2 to obtain doped indium tin oxide powder;

[0011] (4) Load the doped indium tin oxide powder into a mold for molding to obtain a green body;

[0012] (5) Place the green body into a sintering furnace and sinter it in five stages. In the first stage, under an oxygen / hydrogen mixed atmosphere, heat it from room temperature to 300 °C at a rate of 0.3 - 3 °C / min and hold for 20 - 50 h. In the second stage, under the oxygen / hydrogen mixed atmosphere, heat it from 300 °C to 550 - 600 °C at a rate of 0.3 - 3 °C / min and hold for 20 - 50 h. In the third stage, under an oxygen atmosphere, heat it from 550 - 600 °C to 800 - 1300 °C at a rate of 4 - 8 °C / min and hold for 1 - 2 h. In the fourth stage, under the oxygen atmosphere, heat it from 800 - 1300 °C to 1400 - 1500 °C at a rate of 1.7 - 4 °C / min and hold for 4 - 40 h. In the fifth stage, under a nitrogen atmosphere, cool it from 1400 - 1500 °C to room temperature at a rate of 5 - 40 °C / min to obtain a new indium tin oxide target with low nodulation and high film yield.

[0013] Preferably, for the gallium oxide powder, cobalt oxide powder, indium oxide powder, and tin oxide powder, by weight percentage, the gallium oxide powder is 0.5% - 3.5%, the cobalt oxide powder is 0.5% - 3.5%, the tin oxide powder is 9% - 13%, and the balance is indium oxide powder.

[0014] Preferably, the specific surface area of the gallium oxide powder is 4 - 10 m 2 / g, the specific surface area of the cobalt oxide powder is 4 - 10 m 2 / g, the specific surface area of the indium oxide powder is 5 - 10 m 2 / g, and the specific surface area of the tin oxide powder is 6 - 11 m 2 / g.

[0015] Preferably, in the step (1), the addition amount of pure water is equal to the total weight of the gallium oxide powder and the cobalt oxide powder.

[0016] Preferably, in the step (2), the addition amount of pure water is equal to the total weight of the indium oxide powder and the tin oxide powder.

[0017] Preferably, in the step (3), the inlet air temperature for drying and granulating is 200 - 230 °C, and the outlet air temperature is 80 - 110 °C.

[0018] Preferably, in the step (4), the forming pressure is 280 - 350 MPa, and the time is 40 - 60 min.

[0019] Preferably, in the step (5), the volume ratio of oxygen to hydrogen in the oxygen / hydrogen mixed atmosphere is 100:0.01 - 1.

[0020] Furthermore, the present invention also provides a new indium tin oxide target with low nodulation and high film yield, which is obtained by the preparation method of the new indium tin oxide target with low nodulation and high film yield.

[0021] Advantages of the present invention:

[0022] The present invention simultaneously uses gallium oxide with excellent conductivity and transparency, and cobalt oxide element with high reactivity with hydrogen, good stability and weather resistance. During the degreasing process of the target at the low sintering temperature, by controlling the concentration of trace hydrogen, hydrogen molecules are promoted to enter the pores generated by the volatilization of the dispersant and binder, thereby reducing the oxygen content in the target by reducing gallium oxide and cobalt oxide, improving the conductivity of the traditional ITO target, reducing the resistivity and non-uniform distribution of the secondary phase of the target, and reducing the nodulation phenomenon occurring during the magnetron sputtering process;

[0023] On this basis, by reducing the resistivity of the target and improving the conductivity, the present invention further improves the film properties and reduces the number of downtimes, achieving the goal of improving the production efficiency of conductive films, thereby reducing the film production cost;

[0024] Meanwhile, due to the reduction of the grain size of the target, the present invention also reduces the residual sand generated during the etching of the film prepared from the corresponding target, improves the clarity of the etching boundary, and further improves the performance of the ITO conductive film. Description of the drawings

[0025] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art.

[0026] Figure 1 Pictures of nodules after sputtering of the targets prepared in Example 2 (a), Comparative Example 1 (b), Comparative Example 2 (c) and Comparative Example 3 (d) of the present invention;

[0027] Figure 2 Pictures of the surfaces of the films after etching prepared in Example 2 (a), Comparative Example 1 (b), Comparative Example 2 (c) and Comparative Example 3 (d) of the present invention. Detailed implementation manners

[0028] To make the objectives, technical solutions and advantages of the present invention clearer and more understandable, the following further elaborates on the present invention in conjunction with specific embodiments.

[0029] Example 1:

[0030] (1) Use a ball mill to ball mill 3.5 g of gallium oxide powder (specific surface area 4 m 2 / g) and 3.5 g of cobalt oxide powder (specific surface area 4 m 2 / g), add 7 g of pure water, the diameter of the zirconium beads used in the ball mill is 0.5 mm, stir at a speed of 400 rpm for 12 h to obtain slurry 1;

[0031] (2) Gradually add 80 g of indium oxide powder (specific surface area 5 m 2 / g) and 13 g of tin oxide powder (specific surface area 6 m 2 / g) to the slurry 1 for ball milling, and add 93 g of pure water, and stir at a speed of 400 rpm for 24 h to obtain slurry 2;

[0032] (3) Place the slurry 2 in a centrifugal spray granulator for drying granulation, set the inlet air temperature to 200 °C and the outlet air temperature to 80 °C to obtain doped indium tin oxide powder;

[0033] (4) Load the doped indium tin oxide powder into a mold for molding, with a molding pressure of 280 MPa and a molding time of 40 min to obtain a green body;

[0034] (5) Place the green body into a sintering furnace and sinter in five stages. In the first stage, under an oxygen / hydrogen mixed atmosphere (volume ratio of 100:0.01), heat from room temperature to 300 °C at a rate of 0.3 °C / min and hold for 20 h. In the second stage, under an oxygen / hydrogen mixed atmosphere (volume ratio of 100:0.01), heat from 300 °C to 550 °C at a rate of 0.3 °C / min and hold for 20 h. In the third stage, under an oxygen atmosphere, heat from 550 °C to 800 °C at a rate of 4 °C / min and hold for 1 h. In the fourth stage, under an oxygen atmosphere, heat from 800 °C to 1400 °C at a rate of 4 °C / min and hold for 4 h. In the fifth stage, under an air atmosphere, cool from 1400 °C to room temperature at a rate of 5 °C / min to obtain a new indium tin oxide target with low nodulation and high film yield.

[0035] Example 2:

[0036] (1) Use a ball mill to ball mill 0.1 g of gallium oxide powder (specific surface area 6 m 2 / g) and 0.1 g of cobalt oxide powder (specific surface area 6 m 2 / g), and add 0.2 g of pure water. The diameter of the zirconium beads used in the ball mill is 2 mm, and stir at a speed of 900 rpm for 24 h to obtain slurry 1;

[0037] (2) Gradually add 90.8 g of indium oxide powder (specific surface area 10 m 2 / g) and 9 g of tin oxide powder (specific surface area 11 m 2 / g) to the slurry 1 for ball milling, and add 99.8 g of pure water, and stir at a speed of 900 rpm for 48 h to obtain slurry 2;

[0038] (3) Place the slurry 2 in a centrifugal spray granulator for drying granulation, set the inlet air temperature to 230 °C and the outlet air temperature to 110 °C to obtain doped indium tin oxide powder;

[0039] (4) Load the doped indium tin oxide powder into a mold for forming. The forming pressure is 350 MPa and the forming time is 60 min to obtain a green compact.

[0040] (5) Place the green compact into a sintering furnace and sinter it in five stages. In the first stage, under an oxygen / hydrogen mixed atmosphere (volume ratio of 100:1), heat from room temperature to 300 °C at a rate of 3 °C / min and hold for 50 h. In the second stage, under an oxygen / hydrogen mixed atmosphere (volume ratio of 100:1), heat from 300 °C to 550 °C at a rate of 3 °C / min and hold for 50 h. In the third stage, under an oxygen atmosphere, heat from 550 °C to 1300 °C at a rate of 8 °C / min and hold for 2 h. In the fourth stage, under an oxygen atmosphere, heat from 1300 °C to 1500 °C at a rate of 3 °C / min and hold for 40 h. In the fifth stage, under a nitrogen atmosphere, cool from 1500 °C to room temperature at a rate of 40 °C / min to obtain a new indium tin oxide target with low nodulation and high film yield.

[0041] Example 3:

[0042] (1) Use a ball mill to ball mill 0.5 g of gallium oxide powder (specific surface area 10 m 2 / g) and 0.5 g of cobalt oxide powder (specific surface area 10 m 2 / g), and add 1 g of pure water. The diameter of the zirconium beads used in the ball mill is 0.8 mm, and stir at a speed of 700 rpm for 18 h to obtain slurry 1.

[0043] (2) Gradually add 88 g of indium oxide powder (specific surface area 9 m 2 / g) and 11 g of tin oxide powder (specific surface area 10 m 2 / g) to slurry 1 for ball milling, and add 99 g of pure water. Stir at a speed of 700 rpm for 32 h to obtain slurry 2.

[0044] (3) Place slurry 2 in a centrifugal spray granulator for drying and granulation. Set the inlet air temperature to 210 °C and the outlet air temperature to 105 °C to obtain doped indium tin oxide powder.

[0045] (4) Load the doped indium tin oxide powder into a mold for forming. The forming pressure is 310 MPa and the forming time is 50 min to obtain a green compact.

[0046] (5) Place the green compact into a sintering furnace and sinter it in five stages. In the first stage, under an oxygen / hydrogen mixed atmosphere (volume ratio of 100:0.2), heat it from room temperature to 300 °C at a rate of 2.5 °C / min and hold for 30 h. In the second stage, under an oxygen / hydrogen mixed atmosphere (volume ratio of 100:0.2), heat it from 300 °C to 600 °C at a rate of 2.5 °C / min and hold for 30 h. In the third stage, under an oxygen atmosphere, heat it from 600 °C to 1100 °C at a rate of 6 °C / min and hold for 2 h. In the fourth stage, under an oxygen atmosphere, heat it from 1100 °C to 1440 °C at a rate of 1.7 °C / min and hold for 33 h. In the fifth stage, under a nitrogen atmosphere, cool it from 1440 °C to room temperature at a rate of 32 °C / min to obtain a new indium tin oxide target with low nodulation and high thin film yield.

[0047] Comparative Example 1:

[0048] A conventional indium tin oxide target with an indium oxide to tin oxide ratio of 90:10.

[0049] Comparative Example 2:

[0050] The difference between Comparative Example 2 and Example 3 is that: cobalt oxide was not added in step (1);

[0051] The specific steps are as follows:

[0052] (1) Use a ball mill to ball mill 0.5 g of gallium oxide powder (specific surface area 10 m 2 / g) and add 0.5 g of pure water. The diameter of the zirconium beads used in the ball mill is 0.8 mm, and stir at a speed of 700 rpm for 18 h to obtain slurry 1;

[0053] (2) Gradually add 88.5 g of indium oxide powder (specific surface area 9 m 2 / g) and 11 g of tin oxide powder (specific surface area 10 m 2 / g) to slurry 1 for ball milling, and add 99.5 g of pure water, and stir at a speed of 700 rpm for 32 h to obtain slurry 2;

[0054] (3) Place slurry 2 in a centrifugal spray granulator for drying and granulation, set the inlet air temperature to 210 °C and the outlet air temperature to 105 °C to obtain doped indium tin oxide powder;

[0055] (4) Load the doped indium tin oxide powder into a mold for molding, with a molding pressure of 310 MPa and a molding time of 50 min to obtain a green compact;

[0056] (5) Place the green body into a sintering furnace and sinter it in five stages. In the first stage, under an oxygen / hydrogen mixed atmosphere (volume ratio of 100:0.2), heat from room temperature to 300 °C at a rate of 2.5 °C / min and hold for 30 h. In the second stage, under the oxygen / hydrogen mixed atmosphere (volume ratio of 100:0.2), heat from 300 °C to 600 °C at a rate of 2.5 °C / min and hold for 30 h. In the third stage, under an oxygen atmosphere, heat from 600 °C to 1100 °C at a rate of 6 °C / min and hold for 2 h. In the fourth stage, under an oxygen atmosphere, heat from 1100 °C to 1440 °C at a rate of 1.7 °C / min and hold for 33 h. In the fifth stage, under a nitrogen atmosphere, cool from 1440 °C to room temperature at a rate of 32 °C / min to obtain an indium tin oxide target.

[0057] Comparative Example 3:

[0058] The difference between Comparative Example 3 and Example 3 is that in step (5), both the first stage and the second stage use an oxygen atmosphere;

[0059] The specific steps are as follows:

[0060] (1) Use a ball mill to mill 0.5 g of gallium oxide powder (specific surface area 10 m 2 / g) and 0.5 g of cobalt oxide powder (specific surface area 10 m 2 / g), and add 1 g of pure water. The zirconium beads used in the ball mill have a diameter of 0.8 mm, and stir at a speed of 700 rpm for 18 h to obtain slurry 1;

[0061] (2) Gradually add 88 g of indium oxide powder (specific surface area 9 m 2 / g) and 11 g of tin oxide powder (specific surface area 10 m 2 / g) to slurry 1 for ball milling, and add 99 g of pure water, and stir at a speed of 700 rpm for 32 h to obtain slurry 2;

[0062] (3) Place slurry 2 in a centrifugal spray granulator for drying and granulation, set the inlet air temperature to 210 °C, and the outlet air temperature to 105 °C to obtain doped indium tin oxide powder;

[0063] (4) Load the doped indium tin oxide powder into a mold for molding, the molding pressure is 310 MPa, and the molding time is 50 min to obtain a green body;

[0064] (5) Place the green body into a sintering furnace and sinter it in five stages. In the first stage, under an oxygen atmosphere, heat it from room temperature to 300 °C at a rate of 2.5 °C / min and hold for 30 h. In the second stage, under an oxygen atmosphere, heat it from 300 °C to 600 °C at a rate of 2.5 °C / min and hold for 30 h. In the third stage, under an oxygen atmosphere, heat it from 600 °C to 1100 °C at a rate of 6 °C / min and hold for 2 h. In the fourth stage, under an oxygen atmosphere, heat it from 1100 °C to 1440 °C at a rate of 1.7 °C / min and hold for 33 h. In the fifth stage, under a nitrogen atmosphere, cool it from 1440 °C to room temperature at a rate of 32 °C / min to obtain a new indium tin oxide target with low nodulation and high thin film yield.

[0065] Performance test:

[0066] To further compare the performance differences among the embodiments, in addition to characterizing the intrinsic properties of each target (the results are shown in Table 1-2), the present invention also verified the coating of each target using a magnetron sputtering method (the results are shown in Table 3-4). Among them, the nodulation situation is as Figure 1 shown, and the thin film is etched to characterize the situation of its etched residual sand, and the results are as Figure 2 shown.

[0067] Coating: Use a magnetron coating machine to prepare a thin film, and the parameter settings are as follows: the base vacuum degree is set to 3×10 - 4 Pa; the substrate temperature is set to room temperature; the coating atmosphere is an argon-oxygen mixture, and the proportion of oxygen is 0.2%; the power density is set to 3.5 W / cm 2 ; the working pressure is 0.8 Pa.

[0068] Etching: Select a suitable photoresist, pour the photoresist onto the thin film, and spin-coat it with a spin coater (the first step rotation speed is 500 r / min, spin-coat for 10 s, the second step rotation speed is 5000 r / min, spin-coat for 50 s to obtain a photoresist layer with a thickness less than 5 μm), and then bake it, successively at 65 °C (1 min), 95 °C (2 min), and 65 °C (1 min). Then use a lithography machine to transfer the designed pattern onto the thin film (the exposure dose is 1200 mJ / cm 2 . After exposure, bake it at 65 °C (1 min), 95 °C (2 min), and 65 °C (1 min) in the same way; finally, put the exposed thin film into the etching solution for development for 30 s, take it out, rinse it with pure water, and finally bake it at 125 °C for 1 min (where the etching solution is prepared by mixing concentrated hydrochloric acid, concentrated nitric acid, and pure water in a mass ratio of 50:3:50)

[0069] Table 1 Test results of the intrinsic properties of the target

[0070]

[0071]

[0072] Data analysis: As can be seen from the data in Table 1, with the doping of gallium and cobalt elements, the grain size of the target decreases, and the target becomes smoother, which helps to improve the stability during the use of the target and reduces the processing difficulty. At the same time, the resistivity of the target also shows a decreasing trend, which benefits from the introduction of a small amount of hydrogen gas.

[0073] Table 2 Test results of resistivity of primary and secondary phases of the target

[0074]

[0075] Data analysis: As can be seen from the data in Table 2, the resistivity of the secondary phase of the novel indium tin oxide target with low nodulation and high film yield provided by the present invention is significantly reduced.

[0076] Table 3 Films at different substrate temperatures Test results of sheet resistance performance

[0077]

[0078]

[0079] Data analysis: As can be seen from the data in Table 3, due to the addition of gallium oxide and cobalt oxide, the crystallization temperature of the film slightly increases. The sheet resistance before annealing is greater than that of the traditional ITO film, while after annealing at 210 °C, the sheet resistance value drops rapidly and is lower than that of the traditional ITO film, further improving the electrical conductivity of the film.

[0080] From Figure 1 it can be seen that compared with the targets prepared in Comparative Examples 1-3, the novel ITO target in Example 3 has less nodulation at the edges and joints after sputtering, which will also reduce the number of equipment shutdowns caused by target nodulation during the coating process, improving the production efficiency and the yield of film preparation.

[0081] Table 4 Films Test results of performance

[0082]

[0083] Data analysis: As can be seen from the data in Table 4, compared with the films prepared in Comparative Examples 1-3, the novel ITO film prepared in Example 3 has higher transmittance and lower resistivity, and it has a higher carrier mobility.

[0084] From Figure 2It can be seen that the novel ITO film prepared in Example 3 has clear, clean and controllable boundaries after etching, while the ITO films prepared in Comparative Examples 1-3 have obvious residual etching sand after etching.

[0085] Those of ordinary skill in the art should understand that the discussion of any of the above embodiments is exemplary only and is not intended to imply that the scope of the invention is limited to these examples; under the concept of the present invention, the technical features in the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations in different aspects of the present invention as described above, which are not provided in detail for the sake of brevity.

Claims

1. A preparation method of a novel indium tin oxide target with low nodulation and high thin film yield rate, characterized in that, It includes the following steps: (1) Ball-mill gallium oxide powder and cobalt oxide powder, add pure water, and stir at a speed of 400 - 900 rpm for 12 - 24 h to obtain Slurry 1; (2) Gradually add indium oxide powder and tin oxide powder to Slurry 1 for ball-milling, add pure water, and stir at a speed of 400 - 900 rpm for 12 - 48 h to obtain Slurry 2; (3) Dry and granulate Slurry 2 to obtain doped indium tin oxide powder; (4) Load the doped indium tin oxide powder into a mold for molding to obtain a green body; (5) Place the green body into a sintering furnace and sinter it in five stages. In the first stage, under an oxygen / hydrogen mixed atmosphere, heat from room temperature to 300 °C at a rate of 0.3 - 3 °C / min and hold for 20 - 50 h. In the second stage, under an oxygen / hydrogen mixed atmosphere, heat from 300 °C to 550 - 600 °C at a rate of 0.3 - 3 °C / min and hold for 20 - 50 h. In the third stage, under an oxygen atmosphere, heat from 550 - 600 °C to 800 - 1300 °C at a rate of 4 - 8 °C / min and hold for 1 - 2 h. In the fourth stage, under an oxygen atmosphere, heat from 800 - 1300 °C to 1400 - 1500 °C at a rate of 1.7 - 4 °C / min and hold for 4 - 40 h. In the fifth stage, under a nitrogen atmosphere, cool from 1400 - 1500 °C to room temperature at a rate of 5 - 40 °C / min to obtain a new indium tin oxide target with low nodulation and high film yield; The gallium oxide powder, cobalt oxide powder, indium oxide powder, and tin oxide powder are calculated by weight percentage. The gallium oxide powder is 0.5% - 3.5%, the cobalt oxide powder is 0.5% - 3.5%, the tin oxide powder is 9% - 13%, and the balance is indium oxide powder.

2. The preparation method of the novel indium tin oxide target with low nodulation and high thin film yield according to claim 1, characterized in that In step (1), the addition amount of pure water is equal to the total weight of the gallium oxide powder and the cobalt oxide powder.

3. The preparation method of the novel indium tin oxide target with low nodulation and high thin film yield according to claim 1, characterized in that, The specific surface area of the gallium oxide powder is 4-10 m 2 / g, the specific surface area of the cobalt oxide powder is 4-10 m 2 / g, the specific surface area of the indium oxide powder is 5-10 m 2 / g, and the specific surface area of the tin oxide powder is 6-11 m 2 / g.

4. The preparation method of the novel indium tin oxide target with low nodulation and high film yield according to claim 1, characterized in that, In step (2), the addition amount of pure water is equal to the total weight of the indium oxide powder and the tin oxide powder.

5. The preparation method of the novel indium tin oxide target with low nodulation and high thin film yield according to claim 1, characterized in that, In step (3), the inlet air temperature for drying and granulating is 200 - 230 °C, and the outlet air temperature is 80 - 110 °C.

6. The preparation method of the novel indium tin oxide target with low nodulation and high film yield according to claim 1, characterized in that, In step (4), the pressure for molding is 280 - 350 MPa, and the time is 40 - 60 min.

7. The preparation method of the novel indium tin oxide target with low nodulation and high film yield according to claim 1, characterized in that, In step (5), the volume ratio of oxygen to hydrogen in the oxygen / hydrogen mixed atmosphere is 100:0.01 - 1.

8. A novel indium tin oxide target with low nodulation and high thin film yield, characterized in that, It is obtained by the preparation method of the new indium tin oxide target with low nodulation and high film yield according to any one of claims 1 - 7.

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