Magnetron sputtering coating method for TAC / PMMA base material

Abstract

The invention provides a TAC / PMMA base material magnetron sputtering coating method, which belongs to the technical field of coating, and comprises the following steps: carrying out plasma cleaning on a base material, then carrying out gradient preheating, setting a process section winding tension gradient, carrying out double-target magnetron sputtering coating, and finally annealing. The invention provides a magnetron sputtering coating method for a TAC / PMMA base material. The purpose of improving the adhesive force of a film layer is achieved.

Description

Technical Field

[0001] The present invention relates to the field of coating technology, and particularly to a magnetron sputtering coating method for TAC / PMMA substrates. Background Art

[0002] A touch screen, also known as a "touch panel", is an inductive liquid crystal display device that can receive input signals such as touches. When a graphical button on the screen is touched, the tactile feedback system on the screen can drive various connecting devices according to a pre-programmed program, which can be used to replace a mechanical button panel and create vivid audio-visual effects through the liquid crystal display screen.

[0003] Since the earliest resistive touch screen appeared in the world in 1974, with the development of technology and the growth of application requirements, various touch technologies have emerged one after another to adapt to applications in various industries and levels. Nowadays, commercial touch screen technologies that have been formed include: resistive touch screen technology, capacitive touch screen technology, infrared touch screen technology, surface acoustic wave (SAW) touch screen technology, etc., and have been widely applied to many fields such as mobile phones, tablet computers, retail, public information query, multimedia information systems, medical instruments, industrial automatic control, entertainment and catering industries, automatic ticket selling systems, and education systems.

[0004] In order to prepare a thinner and lighter touch display screen, the external touch function array can be integrated with the existing structure in the liquid crystal screen. The Chinese patent application document with the publication number CN113376728A and the name of polarizer, touch liquid crystal panel and touch liquid crystal display module discloses a polarizer, including: a substrate having opposite first and second surfaces, a first TAC, PVA, and a second TAC provided on the first surface of the substrate, and at least one of the first surface and the second surface of the substrate is further provided with a transparent conductive layer, and the transparent conductive layer forms a touch electrode. The above technical solution realizes the integration of the touch function inside the liquid crystal screen. However, in the above technical solution, to prepare the touch array, a metal or ITO conductive film layer needs to be prepared on the TAC / PMMA substrate first. However, the heat resistance and tensile properties of the TAC / PMMA substrate are relatively poor, resulting in the inapplicability of the roll-to-roll magnetron sputtering coating process commonly used for substrates such as PET, and the adhesion of the film layer is relatively poor. Summary of the Invention

[0005] In view of this, the present invention provides a magnetron sputtering coating method for TAC / PMMA substrates to achieve the purpose of improving the adhesion of the film layer.

[0006] To achieve the above purpose, the present invention provides a magnetron sputtering coating method for TAC / PMMA substrates, including the following steps: The substrate is subjected to plasma cleaning, then gradient preheating, the winding tension gradient of the process section is set, double-target magnetron sputtering coating is carried out, and finally annealing is performed.

[0007] Optionally, a mixed gas is used during the plasma cleaning, the power is 250 - 350 W, and the processing speed is 5 - 8 m / min.

[0008] Optionally, the mixed gas is a mixture of oxygen and argon, and the volume ratio of oxygen to argon is 1:4.

[0009] Optionally, the gradient preheating uses composite heating of infrared radiation and hot air convection.

[0010] Optionally, the gradient preheating includes three temperature zones, and the temperature ranges of the three temperature zones are 80 - 85 °C, 90 - 100 °C, and 105 - 110 °C in sequence, and each temperature zone stays for 30 - 60 s.

[0011] Optionally, the winding tension gradient of the process section includes four zones, namely the unwinding zone, the pretreatment zone, the coating zone, and the winding zone in sequence. The pretreatment zone includes the plasma cleaning and gradient preheating stages, and the coating zone includes the double-target magnetron sputtering coating stage.

[0012] Optionally, the winding tension gradient of the unwinding zone is 75 - 85 N / m; the winding tension gradient of the pretreatment zone is 55 - 65 N / m; the winding tension gradient of the coating zone is 35 - 45 N / m; the winding tension gradient of the winding zone is 65 - 75 N / m.

[0013] Optionally, the double-target magnetron sputtering coating includes a first target and a second target. The first target is a Cr target, and the power density is 2 - 3 W / cm 2 ; the second target is a Cu target, and the power density is 5 - 8 W / cm 2 .

[0014] Optionally, the double-target magnetron sputtering coating includes a cooling system, and the cooling system includes temperature control in three stages: front, middle, and rear. The front stage is the starting area of Cu target sputtering, and the temperature is -2 - 2 °C; the middle stage is the main deposition area, and the temperature is -15 - -10 °C; the rear stage is the film layer stabilization area, and the temperature is 3 - 7 °C.

[0015] Optionally, the annealing is carried out with nitrogen protection and microwave heating, and the conditions for microwave heating are 200 - 300 W, 2 - 5 s.

[0016] The above technical solutions of the present invention at least include the following beneficial effects: The technical solution provided by the present invention improves the film layer adhesion through the pretreatment of the substrate, the cooperation of the gradient winding tension, and the cooling system during coating, and realizes that the magnetron sputtering coating method is applicable to TAC / PMMA substrates. Detailed implementation mode

[0017] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the described embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present invention.

[0018] Embodiment 1 The present invention provides a method for magnetron sputtering coating on a TAC / PMMA substrate, which includes the following steps: The TAC / PMMA substrate is subjected to glow discharge cleaning using an Ar / O2 mixed gas (volume ratio 4:1), and the process parameters are a vacuum degree of 1.0 Pa, a power of 300 W, a processing speed of 8 m / min, and a processing time of 5 min.

[0019] The plasma-cleaned substrate is subjected to gradient preheating. The gradient preheating uses a combination of infrared radiation and hot air convection heating. The gradient preheating includes three temperature zones, and the temperature ranges of the three temperature zones are 80°C, 90°C, and 110°C in sequence, and each temperature zone stays for 30 s.

[0020] Set the winding tension gradient of the process section. The winding tension gradient of the process section includes four zones, namely the unwind zone, the pretreatment zone, the coating zone, and the rewind zone. The pretreatment zone includes the plasma cleaning and gradient preheating stages, and the coating zone includes the dual-target magnetron sputtering coating stage. The unwind zone is the stage before the pretreatment zone, and the rewind zone is the stage after the coating zone. The winding tension gradient of the unwind zone is 75 N / m; the winding tension gradient of the pretreatment zone is 65 N / m; the winding tension gradient of the coating zone is 45 N / m; the winding tension gradient of the rewind zone is 60 N / m.

[0021] The substrate is subjected to dual-target magnetron sputtering coating. The dual-target magnetron sputtering coating includes a first target and a second target. The first target is a Cr target, and the first layer is a Cr transition layer, with a power density of 3 W / cm 2 , a deposition rate of 0.5 nm / s, and a film layer thickness of 5 nm; the second target is a Cu target, and the second layer is a Cu conductive layer, with a power density of 5 W / cm 2 , a working gas pressure of 0.5 Pa, a deposition rate of 5 nm / s, and a film layer thickness of 50 nm. The dual-target magnetron sputtering coating includes a cooling system. The cooling system includes temperature control in three stages: front, middle, and back. The front stage is the starting area of copper target sputtering, with a temperature of 0°C; the middle stage is the main deposition area, with a temperature of -10°C; the back stage is the film layer stabilization area, with a temperature of 5°C.

[0022] The coated substrate is annealed under nitrogen protection with microwave heating. The conditions for microwave heating are 300 W and 2 s.

[0023] Example 2 The present invention provides a magnetron sputtering coating method for a TAC / PMMA substrate, comprising the following steps: The TAC / PMMA substrate is subjected to glow discharge cleaning using an Ar / O2 mixed gas (volume ratio 4:1). The process parameters are a vacuum degree of 0.5 Pa, a power of 250 W, a processing speed of 5 m / min, and a processing time of 6 min.

[0024] The plasma-cleaned substrate is subjected to gradient preheating using a combination of infrared radiation and hot air convection. The gradient preheating includes three temperature zones, and the temperature ranges of the three temperature zones are 85°C, 100°C, and 105°C in sequence, with a residence time of 45 s in each temperature zone.

[0025] Set the winding tension gradient in the process section. The winding tension gradient in the process section includes four zones, namely the unwind zone, the pretreatment zone, the coating zone, and the rewind zone. The pretreatment zone includes the plasma cleaning and gradient preheating stages, and the coating zone includes the dual-target magnetron sputtering coating stage. The unwind zone is the stage before the pretreatment zone, and the rewind zone is the stage after the coating zone. The winding tension gradient in the unwind zone is 80 N / m; the winding tension gradient in the pretreatment zone is 55 N / m; the winding tension gradient in the coating zone is 35 N / m; the winding tension gradient in the rewind zone is 65 N / m.

[0026] The substrate is subjected to dual-target magnetron sputtering coating. The dual-target magnetron sputtering coating includes a first target and a second target. The first target is a Cr target, and the first layer is a Cr transition layer with a power density of 2 W / cm 2 , a deposition rate of 1.0 nm / s, and a film layer thickness of 8 nm; the second target is a Cu target, and the second layer is a Cu conductive layer with a power density of 8 W / cm 2 , a working gas pressure of 0.3 Pa, a deposition rate of 3 nm / s, and a film layer thickness of 80 nm. The dual-target magnetron sputtering coating includes a cooling system, and the cooling system includes temperature control in three stages: the front, middle, and rear. The front stage is the starting area of copper target sputtering, with a temperature of 5°C; the middle stage is the main deposition area, with a temperature of -15°C; the rear stage is the film layer stabilization area, with a temperature of 0°C.

[0027] The coated substrate is annealed under nitrogen protection with microwave heating. The conditions for microwave heating are 200 W and 4 s.

[0028] Example 3 The present invention provides a magnetron sputtering coating method for a TAC / PMMA substrate, comprising the following steps: The TAC / PMMA substrate was subjected to glow discharge cleaning using an Ar / O2 mixed gas (volume ratio 4:1). The process parameters were a vacuum degree of 0.6 Pa, a power of 350 W, a processing speed of 6 m / min, and a processing time of 4 min.

[0029] The substrate after plasma cleaning was subjected to gradient preheating. The gradient preheating used a combination of infrared radiation and hot air convection heating. The gradient preheating included three temperature zones, and the temperature ranges of the three temperature zones were 82°C, 95°C, and 107°C in sequence, with a residence time of 60 s in each zone.

[0030] The winding tension gradient of the process section was set. The winding tension gradient of the process section included four zones, namely the unwinding zone, the pretreatment zone, the coating zone, and the winding zone. The pretreatment zone included the plasma cleaning and gradient preheating stages. The coating zone included the dual-target magnetron sputtering coating stage. The unwinding zone was the stage before the pretreatment zone, and the winding zone was the stage after the coating zone. The winding tension gradient of the unwinding zone was 85 N / m; the winding tension gradient of the pretreatment zone was 60 N / m; the winding tension gradient of the coating zone was 40 N / m; the winding tension gradient of the winding zone was 75 N / m.

[0031] The substrate was subjected to dual-target magnetron sputtering coating. The dual-target magnetron sputtering coating included a first target and a second target. The first target was a Cr target, and the first layer was a Cr transition layer. The power density was 2.5 W / cm 2 , the deposition rate was 0.8 nm / s, and the film thickness was 6 nm; the second target was a Cu target, and the second layer was a Cu conductive layer. The power density was 6 W / cm 2 , the working pressure was 0.4 Pa, the deposition rate was 4 nm / s, and the film thickness was 65 nm. The dual-target magnetron sputtering coating included a cooling system. The cooling system included temperature control in three stages: the front, middle, and rear. The front stage was the starting area of copper target sputtering, with a temperature of 2°C; the middle stage was the main deposition area, with a temperature of -13°C; the rear stage was the film layer stabilization area, with a temperature of 7°C.

[0032] The coated substrate was subjected to annealing treatment. The annealing treatment was carried out with nitrogen protection and microwave heating. The conditions for microwave heating were 250 W and 5 s.

[0033] The above is the preferred implementation mode of the present invention. It should be noted that for those of ordinary skill in the art of this technology, without departing from the principle of the present invention, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present invention.

Claims

1. A magnetron sputtering coating method for TAC / PMMA substrate, characterized in that, It includes the following steps: Plasma clean the substrate, then perform gradient preheating, set the winding tension gradient in the process section, deposit film by dual-target magnetron sputtering, and finally anneal.

2. The magnetron sputtering coating method for TAC / PMMA substrate according to claim 1, characterized in that, When performing plasma cleaning, a mixed gas is used, the power is 250 - 350 W, and the processing speed is 5 - 8 m / min.

3. The magnetron sputtering coating method for TAC / PMMA substrate according to claim 2, characterized in that, The mixed gas is a mixture of oxygen and argon, and the volume ratio of oxygen to argon is 1:

4.

4. The magnetron sputtering coating method for TAC / PMMA substrate according to claim 1, characterized in that, The gradient preheating uses infrared radiation and hot air convection for combined heating.

5. The magnetron sputtering coating method for TAC / PMMA substrate according to claim 4, characterized in that, The gradient preheating includes three temperature zones, and the temperature ranges of the three temperature zones are 80 - 85 °C, 90 - 100 °C, and 105 - 110 °C in sequence, and each temperature zone stays for 30 - 60 s.

6. The magnetron sputtering coating method for TAC / PMMA substrate according to claim 1, characterized in that, The winding tension gradient in the process section includes four zones, namely the unwinding zone, the pretreatment zone, the film deposition zone, and the winding zone in sequence. The pretreatment zone includes the plasma cleaning and gradient preheating stages, and the film deposition zone includes the dual-target magnetron sputtering film deposition stage.

7. The magnetron sputtering coating method for the TAC / PMMA substrate according to claim 6, wherein The winding tension gradient in the unwinding zone is 75 - 85 N / m; the winding tension gradient in the pretreatment zone is 55 - 65 N / m; the winding tension gradient in the film deposition zone is 35 - 45 N / m; the winding tension gradient in the winding zone is 65 - 75 N / m.

8. The magnetron sputtering coating method for the TAC / PMMA substrate according to claim 1, wherein, The dual-target magnetron sputtering coating includes a first target and a second target. The first target is a Cr target with a power density of 2-3 W / cm 2 ; the second target is a Cu target with a power density of 5-8 W / cm 2 .

9. The magnetron sputtering coating method for the TAC / PMMA substrate according to claim 8, characterized in that, The dual-target magnetron sputtering film deposition includes a cooling system, and the cooling system includes temperature control in three stages: the front, middle, and rear. The front stage is the starting area for copper target sputtering, with a temperature of -2 - 2 °C; the middle stage is the main deposition area, with a temperature of -15 - -10 °C; the rear stage is the film layer stabilization area, with a temperature of 3 - 7 °C.

10. The magnetron sputtering coating method for TAC / PMMA substrate according to claim 1, characterized in that, The annealing is carried out with nitrogen protection and microwave heating, and the conditions for microwave heating are 200 - 300 W and 2 - 5 s.