Permanent magnet material magnetizing method and magnetizing equipment

Abstract

The invention belongs to the technical field of permanent magnet materials, and particularly relates to a permanent magnet material magnetizing method and magnetizing equipment. The method comprises the following steps: acquiring a to-be-magnetized magnetizing element, and placing the magnetizing element in a first magnetizing magnetic field with preset intensity; bombarding the magnetized original part through the first high-energy ion beam to generate a magnetized part; and detecting the magnetizing saturation of the magnetized part, if the magnetizing saturation accords with a preset value, indicating that magnetizing succeeds, and otherwise, adjusting the preset intensity of the magnetizing magnetic field to re-magnetize the magnetized part. In the magnetizing process, the high-energy ion beam is used for impacting the magnetized original part, so that the intrinsic coercive force of the material can be instantaneously reduced, and when the magnetized original part is subjected to saturated magnetizing, the required magnetic field intensity is lower than the magnetic field intensity required when the high-energy ion beam is not used for impacting.

Description

Technical Field

[0001] The present invention belongs to the technical field of permanent magnetic materials, and particularly relates to a method and device for magnetizing permanent magnetic materials. Background Art

[0002] Permanent magnetic materials have been widely used in industries such as energy, transportation, computers, and medical devices. Moreover, with the development of emerging fields such as new energy vehicles, wind power generation, and intelligent robots, the demand for permanent magnetic materials is also increasing continuously.

[0003] Magnetization is the process of magnetizing permanent magnetic materials using an external magnetic field, and it is an essential process in the application of permanent magnetic materials. When magnetizing some materials with high intrinsic coercivity, the pulse magnetization method is usually adopted. The working principle of pulse magnetization is to apply an instantaneous large pulse current to the coil, so that the coil generates a short-term super-strong magnetic field to magnetize the material.

[0004] In order to magnetize some materials with high intrinsic coercivity to saturation, the external magnetic field applied in the prior art for magnetization is generally 1.5 times to more than 2 times the intrinsic coercivity of the magnetic material. Therefore, the greater the intrinsic coercivity of the material, the greater the magnetic field required for saturation magnetization, the greater the current, and the higher the requirements for the magnetization environment and equipment, and the higher the magnetization difficulty.

[0005] Object of the Invention

[0006] In order to reduce the magnetization difficulty of some magnetized materials with high intrinsic coercivity, the present invention provides a method and device for magnetizing permanent magnetic materials. By simultaneously bombarding the magnetized material with high-energy ions during the magnetization process, some magnetized materials with high intrinsic coercivity can reach magnetization saturation in a lower magnetic field.

[0007] The object of the present invention is achieved through the following technical solutions:

[0008] In a first aspect, a method for magnetizing a permanent magnetic material includes:

[0009] Step 101: Obtain a magnetized component to be magnetized, and place the magnetized component in a first magnetization magnetic field with a preset intensity;

[0010] Step 102: Bombard the magnetized component with a first high-energy ion beam to generate a first magnetized part;

[0011] Step 103: Detect the magnetization saturation degree of the first magnetized part. If the magnetization saturation degree meets the preset value, the magnetization is successful; otherwise, adjust the preset intensity of the magnetization magnetic field, and re-execute Step 101.

[0012] By obtaining a magnetizing component to be magnetized and placing the magnetizing component in a first magnetizing magnetic field with a preset intensity; bombarding the magnetizing component with a first high-energy ion beam to generate a magnetized component; detecting the magnetization saturation degree of the magnetized component, if the magnetization saturation degree meets the preset value, the magnetization is successful, otherwise, adjusting the preset intensity of the magnetizing magnetic field and re-performing the magnetization process on the magnetized component. During the magnetization process, by bombarding the magnetizing component with a high-energy ion beam, the intrinsic coercivity of the material can be instantaneously reduced, so that when the magnetizing component is saturatedly magnetized, the required magnetic field intensity is lower than that required without bombarding with the high-energy ion beam.

[0013] In some embodiments, after step 103, it further includes:

[0014] Step 104: Set the first magnetized component with the magnetization saturation degree meeting the preset value in a second magnetizing magnetic field with a preset intensity, and the direction of the second magnetizing magnetic field is opposite to that of the first magnetizing magnetic field;

[0015] Step 105: Bombard the magnetizing component with a second high-energy ion beam to generate a magnetized component;

[0016] Step 106: Detect the magnetization saturation degree of the magnetized component, if the magnetization saturation degree meets the preset value, the reverse magnetization is successful, otherwise, adjusting the preset intensity of the magnetizing magnetic field and executing step 101.

[0017] By setting a reverse magnetic field and bombarding with a high-energy ion beam, the magnetized component that has been saturatedly magnetized can be reversely magnetized.

[0018] In some embodiments, the first magnetizing magnetic field and the second magnetizing magnetic field have the same intensity and opposite magnetic field directions.

[0019] In some embodiments, the high-energy ion beam is a pulsed beam or a continuous beam.

[0020] In some embodiments, the magnetizing component is neodymium iron boron.

[0021] In some embodiments, when the first high-energy ion beam and / or the second high-energy ion beam is a pulsed beam, the energy of the high-energy ion beam is 440 - 480 MeV / u.

[0022] In some embodiments, when the first high-energy ion beam and / or the second high-energy ion beam is a pulsed beam, the pulse width of the high-energy ion beam is 180 - 220 ns.

[0023] In some embodiments, when the first high-energy ion beam and / or the second high-energy ion beam is a pulsed beam, the high-energy ion beam is 78 Kr 26+ ion cluster.

[0024] In some embodiments, the types, energies, and pulse widths of the first high-energy ion beam and the second high-energy ion beam are different, or the types, energies, and pulse widths of the first high-energy ion beam and the second high-energy ion beam are the same.

[0025] In a second aspect, the present invention provides a magnetizing device, including a magnetic field generating device, a magnetizing device, and a data terminal; the magnetic field generating device is configured to generate a required magnetic field, the magnetizing device is configured to perform the permanent magnet material magnetizing method according to any one of the first aspect, and control the magnetic field intensity and view the magnetization saturation of the magnetized component through the data terminal.

[0026] The beneficial effects of a permanent magnet material magnetizing method and a magnetizing device according to the present invention are as follows:

[0027] During the magnetization process, the use of a high-energy ion beam to impact the magnetized component can instantaneously reduce the intrinsic coercivity of the material, so that when the magnetized component is saturatedly magnetized, the required magnetic field intensity is lower than that required without using the high-energy ion beam impact. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The drawings are only used to illustrate the embodiments and are not considered to limit the present invention. Moreover, throughout the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0029] Figure 1 is the magnetization flow chart of a permanent magnet material magnetizing method according to the present invention;

[0030] Figure 2 is the reverse magnetization flow chart of a permanent magnet material magnetizing method according to the present invention;

[0031] Figure 3 is the experimental data graph of a permanent magnet material magnetizing method according to the present invention;

[0032] Figure 4 is the framework diagram of a magnetizing device according to the present invention.

[0033] REFERENCE SIGNS:

[0034] 1. Magnetic field generating device; 2. Magnetizing device; 3. Data terminal.

[0035] Hereinafter, the exemplary embodiments of the present invention will be described in more detail with reference to the drawings. Although the exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein.

[0036] Example 1:

[0037] As Figure 1 shown, this example provides a permanent magnet material magnetizing method, including the following steps:

[0038] Step 101: Obtain the magnetizing element to be magnetized and place the magnetizing element in a first magnetizing magnetic field with a preset intensity; specifically, by obtaining the magnetizing element to be magnetized, the magnetizing element can be a conventional permanent magnetic material, such as alnico, neodymium iron boron, samarium cobalt, etc. Place the magnetizing element in a first magnetizing magnetic field with a preset intensity. The magnetic field intensity of the first magnetizing magnetic field is usually 1.5 to 2 times or more of the intrinsic coercivity inherent in the used magnetizing element, so as to enable the magnetizing element to achieve saturation magnetization. In this step, the first magnetizing magnetic field does not need to reach the above intensity.

[0039] Step 102: Bombard the magnetizing element with a first high-energy ion beam to generate a first magnetized part; specifically, bombard the magnetizing element with a high-energy ion beam. The type of the first high-energy ion beam is not limited. The principle is that the first high-energy atomic beam can carry energy and disturb the electron system of the permanent magnetic material, thereby reducing the intrinsic coercivity of the material, and then instantaneously reducing the intrinsic coercivity of the material and reducing the magnetic field intensity required for saturation magnetization. In this step, the high-energy ion beam can be understood as a means to assist magnetization.

[0040] Step 103: Detect the magnetization saturation degree of the first magnetized part. If the magnetization saturation degree meets the preset value, the magnetization is successful; otherwise, adjust the preset intensity of the magnetizing magnetic field and re-magnetize the magnetized part. Specifically, by detecting the magnetization saturation degree of the first magnetized part, if the magnetization saturation degree meets the preset value, that is, after saturation magnetization, the magnetization process is completed. If the saturation magnetization is not achieved, it is necessary to demagnetize and then re-execute Steps 101 to 103, and further adjust the intensity of the first magnetizing magnetic field to enable the first magnetized part to achieve saturation magnetization.

[0041] By obtaining the magnetizing element to be magnetized and placing the magnetizing element in a first magnetizing magnetic field with a preset intensity; bombarding the magnetizing element with a high-energy ion beam to generate a magnetized part; detecting the magnetization saturation degree of the magnetized part. If the magnetization saturation degree meets the preset value, the magnetization is successful; otherwise, adjust the preset intensity of the magnetizing magnetic field and re-magnetize the magnetized part. During the magnetization process, using a high-energy ion beam to impact the magnetizing element can instantaneously reduce the intrinsic coercivity of the material. Therefore, when saturating the magnetization of the magnetizing element, the required magnetic field intensity is lower than that without using the high-energy ion beam impact. At the same time, through the bombardment of the high-energy ion beam, when applying to materials with high intrinsic coercivity, there is no need for the traditional heating and cooling process, further improving the magnetization efficiency.

[0042] Example 2:

[0043] As Figure 2As shown in the figure, this embodiment further proposes a reverse magnetization method based on the high-energy ion beam magnetization method proposed in Embodiment 1. The steps are as follows: After the first magnetized part obtained in Step 103, that is, after the first magnetized part with saturated magnetization, the following steps are executed:

[0044] Step 104: Place the first magnetized part with a magnetization saturation degree meeting the preset value in a second magnetization magnetic field with a preset intensity, and the direction of the second magnetization magnetic field is opposite to that of the first magnetization magnetic field; specifically, this step is to place the first magnetized part after magnetization saturation in Embodiment 1 in the second magnetization magnetic field, and the direction of the second magnetization magnetic field is opposite to that of the first magnetization magnetic field.

[0045] Step 105: Bombard the magnetized element with a high-energy ion beam to generate a second magnetized part; specifically, continue to bombard the magnetized element with a second high-energy ion beam to achieve the same reduction of the intrinsic coercivity, and achieve a second magnetization magnetic field with a lower intensity for reverse magnetization of the second magnetized part. Among them, the second high-energy ion beam can have the same properties as the first high-energy ion beam, only the bombardment duration or the number of bombardment pulses is different.

[0046] Step 106: Detect the magnetization saturation degree of the second magnetized part. If the magnetization saturation degree meets the preset value, the reverse magnetization is successful; otherwise, adjust the preset intensity of the magnetization magnetic field and execute Step 101. Specifically, by detecting the magnetization saturation degree of the second magnetized part, if the magnetization saturation degree meets the preset value, that is, after saturated magnetization, the magnetization process is completed. If the saturated magnetization is not achieved, it is necessary to demagnetize and then re-execute Steps 101 to 106, and adjust the intensity of the second magnetization magnetic field at Step 106 so that the magnetized element reaches reverse saturated magnetization. Through Steps 101 to 106, when the magnetized element needs reverse magnetization, the reverse magnetization of the element can be achieved by bombarding with a high-energy ion beam.

[0047] In some embodiments, the high-energy ion beam can be a pulsed beam or a long-time continuous ion beam; the irradiation time of the ion beam does not affect the degree of reduction of the intrinsic coercivity. However, it should be noted that since the ion beam only temporarily reduces the intrinsic coercivity, when the pulsed beam is used in the experiment, the magnetization time after ion beam bombardment cannot be too long to avoid the recovery of the intrinsic coercivity of the magnetized element to its original value, thus rendering the purpose of this experiment ineffective.

[0048] In some embodiments, the intensities of the first magnetization magnetic field and the second magnetization magnetic field are the same, and the magnetic field directions are opposite. By placing the first magnetized part saturatedly magnetized within the first magnetic field intensity into the second magnetic field intensity with a direction opposite to that of the first magnetization magnetic field, the already saturated first magnetized part is reversely saturated to become the second magnetized part.

[0049] Embodiment 3:

[0050] As Figure 3 shown, for the magnetization methods proposed in Embodiment 1 and Embodiment 2, this embodiment further proposes an implementation method:

[0051] In some embodiments, the magnetizing element uses neodymium iron boron. More specifically, several cylindrical neodymium iron boron materials with a diameter of 6 mm and a length of 10 mm are selected. It should be noted that the shape of neodymium iron boron will not have too much influence on the experimental data and conclusions. The intrinsic coercivity is a characteristic of the material itself. However, it should be further noted that the selected shape needs to ensure complete bombardment by high-energy ion beams, and there will be no incomplete bombardment of the reflected part caused by the shape of the magnetizing material such as edges and corners, resulting in unstable experimental conclusions. Further, the bombardment angle of high-energy ions can be changed according to the shape to achieve the above-mentioned complete bombardment. In this embodiment, the high-energy ion beam bombards according to the shape along one end face of the neodymium iron boron cylinder. And according to the shape of the neodymium iron boron cylinder, the first magnetization magnetic field magnetizes along the axial direction. The selected neodymium iron boron material has an intrinsic coercivity of 13.56 kOe (1079 kA / m) and an intrinsic coercivity of 17.78 kOe (1414 kA / m).

[0052] In some embodiments, when magnetizing the above-mentioned neodymium iron boron, the energy of the high-energy ion beam can be selected as 440 - 480 MeV / u, more specifically 460 MeV / u; the pulse width of the high-energy ion beam can be selected as 180 - 220 ns, more specifically 200 ns; the high-energy ion beam can be selected as 78 Kr 26+ ion clusters. More specifically, one bunch contains about 7×10 8 ions. Under this condition, when the external magnetic field strength of the first magnetization magnetic field is only 1.4 T, only 2 - 5 ion pulse beams are required. In the case of normal magnetization without high-energy ion impact, a magnetic field strength of more than 3 T (about 1.69 times that of the neodymium iron boron material) is required.

[0053] Further, after the above-mentioned neodymium iron boron is saturatedly magnetized, the saturatedly magnetized neodymium iron boron is placed in the second magnetization magnetic field. The magnetic field direction of the second magnetization magnetic field is opposite to that of the first magnetization magnetic field, and its strength can also be selected as 1.4 T. When the selected neodymium iron boron is of the size of Φ4×10 cylinder, through 1 - 2 78 Kr 26+ ion cluster pulse beams, more specifically 2; or when the selected neodymium iron boron is of the size of Φ6×10 cylinder, through 4 - 6 78 Kr 26+ ion cluster pulse beams, more specifically 6; the reverse saturation effect can be achieved.

[0054] As Figure 3As shown in the figure, where the vertical coordinate is the magnetization saturation of the magnetizing element and the horizontal coordinate is the magnetizing magnetic field. Two material sizes of Φ4×10 and Φ6×10 are respectively set. Among them, the curve Y3 is the magnetization curve of steps 101 - 103. As shown in the figure, at 1.4T, the magnetizing element is close to saturation. The curve Y4 is the curve without bombarding with high-energy ion beams. It can be seen that Y4 is close to the saturation state when approaching 3T (about 1.69 times that of neodymium iron boron material). It can be concluded that the magnetizing element bombarded with high-energy ion beams can achieve saturation magnetization with a lower magnetizing intensity. The curve Y1 is the reverse magnetization curve of steps 104 - 106. Compared with the reverse magnetization curve Y2 without bombarding with high-energy ion beams, Y1 reaches saturation when approaching 1.4T, while Y2 reaches saturation when approaching 3T. It can also be seen that during the reverse magnetization process, the high-energy ion beam also plays an auxiliary magnetization role and reduces the magnetic field required for saturation. And in Φ6×10, the Y7 curve bombarded with high-energy ion beams also conforms to the above theory compared with the Y6 curve without bombarding with high-energy ion beams, and the reverse magnetization Y5 curve bombarded with high-energy ion beams also conforms to the above theory compared with the reverse magnetization Y4 curve without bombarding with high-energy ion beams.

[0055] In some embodiments, the types, energies, and pulse widths of the first high-energy ion beam and the second high-energy ion beam are different, or the types, energies, and pulse widths of the first high-energy ion beam and the second high-energy ion beam are the same. The first high-energy ion beam and the second high-energy ion beam can use high-energy ion beams with the same properties, that is, all properties such as type, energy, and pulse width are the same. Or, the types, energies, and pulse widths of the first high-energy ion beam and the second high-energy ion beam are not completely consistent, or completely inconsistent. For example, the types are different, but other data such as energy and pulse width are the same, or the types, energies, and pulse widths are all different. It can also be further understood that the first high-energy ion beam and the second high-energy ion beam both play an auxiliary magnetization role during the magnetization process and do not change the inherent properties of the magnetizing element. Therefore, only the impact of high-energy ion beams is required to achieve the effect of reducing the intrinsic coercivity, and it does not target a specific high-energy ion beam and can be selected according to the situation.

[0056] Furthermore, after testing, the saturation magnetic field value of the selected neodymium iron boron material is independent of ion bombardment (even under conditions of long-term irradiation (>0.5 h) and a strong external magnetic field (10 T)). It can be understood that ion bombardment does not improve the performance of neodymium iron boron. However, ion beam bombardment can instantaneously reduce the intrinsic coercivity of the permanent magnet material, enabling the material to reach saturation magnetization under a lower external magnetic field and playing an auxiliary magnetization role. In addition, even when the sample is bombarded for up to 1 hour, no decrease in the magnetic field performance of the sample is found, that is, the sample is not permanently damaged. This shows that bombarding the magnetization element with a high-energy ion beam only instantaneously changes the intrinsic coercivity and does not permanently change the composition of the material.

[0057] Example 4:

[0058] As Figure 4 shown, the present invention provides a magnetization device, specifically including a magnetic field generation device 1, a magnetization device 2, and a data terminal 3; the magnetic field generation device 1 is used to generate the required magnetic field, including adjusting the magnetic field intensity, direction, etc., to cooperate with the settings of the first magnetization magnetic field and the second magnetization magnetic field. The magnetization device 2 is used to perform the permanent magnet material magnetization method according to any one of Example 1, Example 2, and Example 3. It mainly provides the release of high-energy ion beams, including setting attributes such as the energy, time, intensity, and pulse width of the high-energy ion beams required in the above-mentioned examples to cooperate with the implementation of the methods mentioned in the above examples. And the magnetic field intensity is controlled and the magnetization saturation of the magnetization element is viewed through the data terminal 3. The control of the magnetic field generation device 1 and the viewing of the magnetization degree of the magnetized part are realized through the data terminal 3, that is, to check whether the magnetized part reaches the required saturation magnetization.

[0059] The algorithms or displays provided herein are not inherently related to any specific computer, virtual system, or other device. In addition, the embodiments of the present invention are not directed to any specific programming language.

[0060] In the specification provided herein, a large number of specific details are described. However, it can be understood that the embodiments of the present invention can be practiced without these specific details. Similarly, in order to streamline the present invention and help understand one or more of the various aspects of the invention, in the above description of the exemplary embodiments of the present invention, the various features of the embodiments of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof. Among them, the claims following the specific implementation manners are hereby expressly incorporated into the specific implementation manners, and each claim itself serves as a separate embodiment of the present invention.

[0061] Those skilled in the art can understand that the modules in the devices in the embodiments can be adaptively changed and arranged in one or more devices different from those of the embodiments. The modules or units or components in the embodiments can be combined into one module or unit or component, and in addition, they can be divided into multiple sub-modules or sub-units or sub-components. Except that at least some of such features and / or processes or units are mutually exclusive.

[0062] It should be noted that the above embodiments illustrate the present invention rather than limit the present invention, and those skilled in the art can design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in the claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The present invention can be implemented by means of hardware including several different elements and by means of a suitably programmed computer. In a unit claim listing several devices, several of these devices can be embodied by the same item of hardware. The use of the words first, second, and third, etc. does not denote any order. These words can be interpreted as names. The steps in the above embodiments, unless otherwise specified, should not be construed as limiting the order of execution.

Claims

1. A method for magnetizing a permanent magnet material, characterized in that, Including: Step 101: Obtain a magnetizing element to be magnetized and place the magnetizing element in a first magnetizing magnetic field with a preset intensity; Step 102: Bombard the magnetizing element with a first high-energy ion beam to generate a first magnetized part; Step 103: Detect the magnetization saturation of the first magnetized part. If the magnetization saturation meets the preset value, the magnetization is successful; otherwise, adjust the preset intensity of the magnetizing magnetic field and re-execute Step 101.

2. The method for magnetizing a permanent magnet material according to claim 1, wherein The high-energy ion beam is a pulsed beam or a continuous beam.

3. The magnetizing method for the permanent magnetic material according to claim 1, characterized in that, After Step 103, it further includes: Step 104: Place the first magnetized part with the magnetization saturation meeting the preset value in a second magnetizing magnetic field with the preset intensity, and the direction of the second magnetizing magnetic field is opposite to that of the first magnetizing magnetic field; Step 105: Bombard the magnetizing element with a second high-energy ion beam to generate a second magnetized part; Step 106: Detect the magnetization saturation of the second magnetized part. If the magnetization saturation meets the preset value, the reverse magnetization is successful; otherwise, adjust the preset intensity of the second magnetizing magnetic field and execute Step 101.

4. The method for magnetizing a permanent magnet material according to claim 3, wherein The first magnetizing magnetic field and the second magnetizing magnetic field have the same intensity and opposite magnetic field directions.

5. The method for magnetizing a permanent magnet material according to claim 3, characterized in that The magnetizing element is neodymium iron boron.

6. The method for magnetizing a permanent magnet material according to claim 4, wherein When the first high-energy ion beam and / or the second high-energy ion beam is a pulsed beam, the energy of the high-energy ion beam is 440 - 480 MeV / u.

7. The magnetizing method for the permanent magnetic material according to claim 4, wherein When the first high-energy ion beam and / or the second high-energy ion beam is considered, the pulse width of the high-energy ion beam is 180 - 220 ns.

8. The method for magnetizing a permanent magnet material according to claim 4, wherein The first high-energy ion beam, and / or the second high-energy ion beam is 78 Kr 26+ an ion cluster.

9. The method for magnetizing a permanent magnet material according to claim 4, wherein The types, energies, and pulse widths of the first high-energy ion beam and the second high-energy ion beam are different, or the types, energies, and pulse widths of the first high-energy ion beam and the second high-energy ion beam are the same.

10. A magnetizing device, characterized in that, Including a magnetic field generating device, a magnetizing device, and a data terminal; the magnetic field generating device is used to generate the required magnetic field, the magnetizing device is used to execute the permanent magnet material magnetizing method according to any one of claims 1 - 9, and control the magnetic field intensity and view the magnetization saturation of the magnetizing element through the data terminal.

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