A high-power 808nm semiconductor laser epitaxial structure and a manufacturing method thereof

Abstract

The application discloses a high-power 808nm semiconductor laser epitaxial structure and a manufacturing method thereof, which comprises, from bottom to top, a substrate, a buffer layer, an N-type limiting layer, an N-type waveguide layer, a first isolation layer, a quantum well layer, a second isolation layer, a P-type waveguide layer, a P-type limiting layer and a P-type ohmic contact layer which are sequentially stacked. x Ga 1‑x As isolation layer, wherein 0.1<=x<=0.45, the growth of Al x Ga 1‑x As material, the influence of In on GaAs x P 1‑x in the reaction chamber is slowed down, non-radiative recombination and carrier loss are reduced, and light-emitting efficiency is increased; the P-type waveguide layer is a P-type Ga x In 1‑x P waveguide layer, by using the property that Mg element is not easy to diffuse, Zn element doping can be avoided to cause Zn to diffuse to the quantum well region; the P-type (Al 1‑y1 Ga y1 ) x In 1‑x P limiting layer is doped with Zn element, and the problem of large bulk resistance caused by the upper limit of effective doping of Mg element in AlGaInP material is avoided.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor lasers, and particularly relates to an epitaxial structure of a high-power 808nm semiconductor laser and a manufacturing method thereof. BACKGROUND

[0002] GaAs-based 808nm high-power semiconductor lasers play an important role in the field of industrial production and processing, and have the characteristics of high energy density and stable operation. They can also be used as a pump source for solid-state lasers. With the development of the medical and cosmetic industries, 808nm semiconductor lasers also play an important role in the fields of laser surgery and laser hair removal.

[0003] With the development of technology, the demand for laser performance in the fields of mechanical manufacturing, laser pumping and laser communication is increasing, and people have higher requirements for the comprehensive performance of high-power lasers. How to selectively improve the comprehensive performance of 808nm GaAs-based lasers is a problem to be solved.

[0004] In the design of existing 808nm high-power GaAs-based semiconductor lasers, GaAsP material is often selected as the light-emitting layer, GaInP material is used as the waveguide layer, and AlGaInP material is used as the confinement layer. However, there is a key problem in the construction process of this structure: after the growth of the GaInP waveguide layer is completed, due to the significant residual of In element in the reaction chamber, the growth of GaAsP light-emitting layer will cause the unclear boundary between GaAsP material and GaInP material, which not only aggravates the non-radiative recombination phenomenon, but also increases the loss of carriers, thereby adversely affecting the light-emitting efficiency.

[0005] In addition, the waveguide layer uses GaInP material, and the confinement layer is composed of AlGaInP material. Both of these two materials are rich in In element. When P-type doping is performed, Mg element or Zn element is usually selected. However, both of these two doping elements have their own limitations. Specifically, the upper limit of the effective doping concentration of Mg element in AlGaInP material is only about 2E 18 cm -3 , which will cause insufficient material doping, thereby causing the increase of bulk resistance, ultimately increasing the operating voltage and reducing the photoelectric conversion efficiency and slope efficiency of the laser. On the other hand, although the effective doping concentration of Zn element in AlGaInP material can reach about 5E 18 cm -3 , the diffusion of Zn element in AlGaInP material is serious, which will cause it to diffuse to the light-emitting area, also aggravate the non-radiative recombination and carrier loss, thereby adversely affecting the light-emitting efficiency. SUMMARY

[0006] The purpose of the present invention is to provide a high-power 808nm semiconductor laser epitaxial structure and a manufacturing method thereof, which can reduce the influence of In inside the reaction chamber on the quantum well layer, increase the luminous efficiency, and solve the problems of Zn element diffusion into the luminous area caused by the easy diffusion of Zn doping and the upper limit of the effective doping of Mg element in AlGaInP material.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] A high-power 808nm semiconductor laser epitaxial structure, comprising a substrate, a buffer layer, an N-type confinement layer, an N-type waveguide layer, a first isolation layer, a quantum well layer, a second isolation layer, a P-type waveguide layer, a P-type confinement layer, and a P-type ohmic contact layer stacked in sequence from bottom to top;

[0009] The quantum well layer is GaAs x P 1-x Quantum well layer, wherein 0.8≤x≤0.9; the first isolation layer and the second isolation layer are both Al x Ga 1-x As isolation layer, where 0.1≤x≤0.45;

[0010] The P-type waveguide layer is P-type Ga x In 1-x The P waveguide layer is doped with Mg; the P-type confinement layer is P-type (Al 1- y1 Ga y1 ) x In 1-x P confinement layer, doped with Zn.

[0011] Optionally, an N-type gradient layer is provided between the N-type confinement layer and the N-type waveguide layer, and the N-type confinement layer is N-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, the N-type waveguide layer is N-type Ga x In 1-x P waveguide layer, the N-type graded layer is N-type (Al 1-y Ga y ) x In 1-x P gradient layer, where y is the gradient variable, y changes from y1 to 1 so that (Al 1-y1 Ga y1 ) x In 1-x P material gradually changes to Ga x In 1-x P material;

[0012] A P-type gradient layer is provided between the P-type waveguide layer and the P-type confinement layer. The P-type gradient layer is P-type (Al 1-y Ga y ) x In 1-x P gradient layer, where y is the gradient variable, y changes from 1 to y1, so that Ga x In 1-x P material gradually changes to (Al 1-y1 Ga y1 ) x In 1-x P material.

[0013] Optionally, the N-type (Al 1-y Ga y ) x In 1-x P graded layer and P type (Al 1-y Ga y ) x In 1-x The thickness of the P graded layer is 15-30nm. 1-y Ga y ) x In 1-x The doping element of the P gradient layer is Si, and the doping amount is 5-8E 18 cm -3 , the P-type (Al 1-y Ga y ) x In 1-x The doping element of the P graded layer is Zn, and the doping amount is 5-6E 18 cm -3 .

[0014] Optionally, the N-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer and P type (Al 1-y1 Ga y1 ) x In 1-x In the P confinement layer, 0.2≤y1≤0.5, x=0.5; the N-type (Al 1-y1 Ga y1 ) x In 1-x The thickness of the P limiting layer is 800-1000nm, the doping element is Si, and the doping amount is 3E 18 cm -3 ; The P type (Al 1-y1 Ga y1 ) x In1-x The thickness of the P confinement layer is 500-700nm, the doping element is Zn, and the doping amount is 3-4E 18 cm -3 .

[0015] Optionally, the N-type Ga x In 1-x The P waveguide layer and the P-type Ga x In 1-x In the P waveguide layer, x=0.5; the N-type Ga x In 1- x The thickness of the P waveguide layer is 800-1000nm, the doping element is Si, and the doping amount is gradually changed from 3E 18 cm -3 to 1E 17 cm -3 ; the P-type Ga x In 1-x The thickness of the P waveguide layer is 300-400nm, the doping element is Mg, and the doping amount is gradually changed from 1E 17 cm -3 to 1.5E 18 cm -3 .

[0016] Optionally, the thickness of the first isolation layer and the second isolation layer is 1-2nm, and they are unintentionally doped layers.

[0017] Optionally, the thickness of the quantum well layer is 10-13nm, and it is an unintentionally doped layer.

[0018] Optionally, the buffer layer is a GaAs buffer layer, the thickness is 500nm, the doping element is Si, and the doping amount is 2E 18 cm -3 .

[0019] The application further provides a manufacturing method of the large-power 808nm semiconductor laser epitaxial structure.

[0020] Growing a buffer layer on a substrate;

[0021] Growing an N-type confinement layer on the buffer layer;

[0022] Growing an N-type waveguide layer on the N-type confinement layer;

[0023] Growing a first isolation layer on the N-type waveguide layer;

[0024] Growing a quantum well layer on the first isolation layer, the quantum well layer is a GaAs x P 1-x quantum well layer, wherein 0.8<=x<=0.9;

[0025] A second spacer layer is grown on the quantum well layer, the first and second spacer layers are both Al x Ga 1-x As spacer layer, wherein 0.1≤x≤0.45;

[0026] A P-type waveguide layer is grown on the second spacer layer, the P-type waveguide layer is P-type Ga x In 1-x P waveguide layer, the doping element is Mg;

[0027] A P-type confinement layer is grown on the P-type waveguide layer, the P-type confinement layer is P-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, the doping element is Zn;

[0028] A P-type ohmic contact layer is grown on the P-type confinement layer.

[0029] Optionally, an N-type graded layer is grown between the N-type confinement layer and the N-type waveguide layer, the N-type confinement layer is N-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, the N-type waveguide layer is N-type Ga x In 1-x P waveguide layer, the N-type graded layer is N-type (Al 1-y Ga y ) x In 1-x P graded layer, wherein y is a grading variable, y is graded from y1 to 1, making (Al 1-y1 Ga y1 ) x In 1-x P material graded to Ga x In 1-x P material;

[0030] A P-type graded layer is grown between the P-type waveguide layer and the P-type confinement layer, the P-type graded layer is P-type (Al 1-y Ga y ) x In 1-x P graded layer; wherein y is a grading variable, y is graded from 1 to y1, making Ga x In 1-x P material graded to (Al 1-y1 Ga y1 ) x In 1-x P material.

[0031] After the above scheme, the beneficial effects of the present application are:

[0032] 1、The present application is in GaAs x P 1-x The two sides of the quantum well layer are respectively inserted into the first isolation layer and the second isolation layer, and the first isolation layer and the second isolation layer are both Al x Ga 1-x As isolation layer, wherein 0.1≤x≤0.45, the growth of Al x Ga 1-x As material can slow down the influence of In on GaAs x P 1-x Quantum well layer, improve the growth conditions of GaAsP quantum well, improve the material quality of GaAsP quantum well, reduce non-radiative recombination and carrier loss, and increase the light emitting efficiency.

[0033] 2、In order to reduce the working voltage of the existing high-power 808nm semiconductor laser while not affecting the light emitting power, the P-type Ga x In 1-x P waveguide layer is doped with Mg element, and the property of Mg element not being easy to diffuse can avoid the phenomenon of Zn diffusion to the quantum well region caused by Zn element doping, and reduce the light emitting efficiency; the P-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer is doped with Zn element, which avoids the problem of large bulk resistance caused by the upper limit of effective doping of Mg element in AlGaInP material.

[0034] 3、Meanwhile, the present application is in Ga x In 1-x P waveguide layer and (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, a high-doped (Al 1-y Ga y ) x In 1-x P gradient layer is arranged between the Ga 1-y1 In y1 P waveguide layer and the (Al x Ga 1-x ) x In 1-x P confinement layer, y in the gradient layer is a gradient, which can gradually change from y1 to 1, so that the (Al x Ga 1-x ) 1-y1 In y1 P material gradually changes into Ga x In 1-x P material, or gradually changes from 1 to y1, so that the Ga x In 1-x P material gradually changes into (Al 1-y1 Ga y1 )x In 1-x P material, using material gradient and high doping can reduce the resistance caused by material change, thereby reducing the operating voltage of the device and increasing the luminous efficiency of the product. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 The structure of the high-power 808nm semiconductor laser epitaxial structure of the application is shown in the figure;

[0036] Figure 2 The band gap change graph between the N-type confinement layer and the N-type waveguide layer without a gradient layer of the application is shown in the figure;

[0037] Figure 3 The band gap change graph between the N-type confinement layer and the N-type waveguide layer with a gradient layer of the application is shown in the figure;

[0038] Figure 4 The process flow chart of the manufacturing method of the application is shown in the figure.

[0039] Label explanation:

[0040] 1, substrate; 2, buffer layer; 3, N-type confinement layer; 4, N-type gradient layer; 5, N-type waveguide layer; 6, first isolation layer; 7, quantum well layer; 8, second isolation layer; 9, P-type waveguide layer; 10, P-type gradient layer; 11, P-type confinement layer; 12, P-type ohmic contact layer. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the application will be clearly and completely described below with reference to the drawings in the embodiments of the application. Obviously, the described embodiments are only part of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of the application, and the range of the application includes two end values.

[0042] Please refer to Figure 1 The application provides a high-power 808nm semiconductor laser epitaxial structure, which comprises, from bottom to top, a substrate 1, a buffer layer 2, an N-type confinement layer 3, an N-type waveguide layer 5, a first isolation layer 6, a quantum well layer 7, a second isolation layer 8, a P-type waveguide layer 9, a P-type confinement layer 11, and a P-type ohmic contact layer 12.

[0043] The quantum well layer 7 is GaAs x P 1-x The quantum well layer, wherein 0.8≤x≤0.9; the first isolation layer 6 and the second isolation layer 8 have the same composition, both being Al x Ga 1-xAs spacer layer, wherein 0.1≤x≤0.45, Al is used x Ga 1-x As material growth, slow down the reaction chamber inside In on GaAs x P 1-x The influence of quantum well layer 7, improved the growth conditions of GaAsP quantum well, improved the material quality of GaAsP quantum well, reduced the non-radiative recombination and carrier loss, and increased the light emitting efficiency.

[0044] Optionally, the thickness of the quantum well layer 7 is 10-13nm, which is a non-intentionally doped layer; the thickness of the first spacer layer 6 and the second spacer layer 8 is also consistent, which is 1-2nm, which is a non-intentionally doped layer.

[0045] The P-type waveguide layer 9 is P-type Ga x In 1-x P waveguide layer, wherein x=5, the doping element is Mg, and the use of Mg element is not easy to diffuse, which can avoid the phenomenon that the use of Zn element doping in the prior art causes Zn to diffuse to the quantum well region, reducing the light emitting efficiency; the P-type confinement layer 11 is P-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, wherein 0.2≤y1≤0.5, x=0.5, the doping element is Zn, which avoids the problem of large bulk resistance caused by the upper limit of effective doping of Mg element in AlGaInP material.

[0046] Specifically, the N-type gradient layer 4 is arranged between the N-type confinement layer 3 and the N-type waveguide layer 5, the N-type confinement layer 3 is N-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, wherein 0.2≤y1≤0.5, x=0.5; the N-type waveguide layer 5 is N-type Ga x In 1-x P waveguide layer, wherein x=5; the N-type gradient layer 4 is N-type (Al 1-y Ga y ) x In 1-x P gradient layer, wherein y is a gradient, here y is gradually changed from y1 to 1, so that (Al 1-y1 Ga y1 ) x In 1-x P material gradually changes to Ga x In 1- xP material, that is, N-type (Al 1-y1 Ga y1 ) x In1-x P confinement layer gradually changes into N type Ga x In 1- xP waveguide layer.

[0047] A P type gradient layer 10 is arranged between the P type waveguide layer 9 and the P type confinement layer 11, the P type gradient layer 10 is P type (Al 1-y Ga y ) x In 1-x P gradient layer, wherein y is a gradient, here y gradually changes from 1 to y1, making Ga x In 1-x P material gradually changes into (Al 1-y1 Ga y1 ) x In 1-x P material, i.e. P type Ga x In 1-x P waveguide layer gradually changes into P type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer.

[0048] Thus, the present application gradually changes Ga x In 1-x P waveguide layer and (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, the resistance caused by material change (i.e. band gap change) can be reduced by using material gradient, the working voltage of the device is reduced, the light emitting efficiency of the product is increased, Ga x In 1-x P waveguide layer and (Al 1-y1 Ga y1 ) x In 1-x The band gap change caused by the absence of the gradient layer between the P confinement layer is shown in Figure 2 and Figure 3 .

[0049] Optionally, the thickness of the N type gradient layer 4 and the P type gradient layer 10 is consistent, both are 15-30nm, and both are high doped, the doped element of the N type gradient layer 4 is Si, and the doping amount is 5-8E 18 cm -3 , the doped element of the P type gradient layer 10 is Zn, and the doping amount is 5-6E 18 cm -3 , the resistance caused by material change can also be reduced by using high doping, the working voltage of the device is reduced, and the light emitting efficiency of the product is increased.

[0050] Optionally, the thickness of the N-type confinement layer 3 is 800-1000nm, the doping element is Si, and the doping amount is 3E 18 cm -3 . The thickness of the P-type confinement layer 11 is 500-700nm, and if a conventional Mg element is used for doping, the doping amount can only reach 2E 18 cm -3 . In the application, Zn is used as the doping element, and the doping amount can reach 3-4E 18 cm -3 .

[0051] Optionally, the thickness of the N-type waveguide layer 5 is 800-1000nm, the doping element is Si, and the doping amount gradually changes from 3E 18 cm -3 to 1E 17 cm -3 ; the thickness of the P-type waveguide layer is 300-400nm, the doping element is Mg, and the doping amount gradually changes from 1E 17 cm -3 to 1.5E 18 cm -3 , that is, the doping of the two waveguide layers gradually decreases in the direction close to the quantum well layer 7, which can reduce the absorption of light by the doping impurities, thereby reducing the light loss and helping to improve the photoelectric conversion efficiency of the quantum well structure.

[0052] Optionally, the substrate 1 is a 10-degree N-type GaAs substrate.

[0053] Optionally, the buffer layer 2 is a GaAs buffer layer with a thickness of 500nm, and the doping element is Si with a doping amount of 2E 18 cm -3 . The buffer layer 2 is provided to connect the substrate 1 and the subsequently grown epitaxial layer, and to reduce the defects of the epitaxial layer.

[0054] Optionally, the material of the P-type ohmic contact layer 12 is GaAs with a thickness of 100-300nm, and the doping element is a P-type doping element C with a doping amount of 1E 20 cm -3 .

[0055] The application also provides a manufacturing method of the large-power 808nm semiconductor laser epitaxial structure, which specifically adopts a metal organic chemical vapor deposition (MOCVD) method to grow the substrate 1, the buffer layer 2, the N-type confinement layer 3, the N-type gradient layer 4, the N-type waveguide layer 5, the first isolation layer 6, the quantum well layer 7, the second isolation layer 8, the P-type waveguide layer 9, the P-type gradient layer 10, the P-type confinement layer 11, and the P-type ohmic contact layer 12 on the substrate 1 in sequence from bottom to top.

[0056] Please refer to Figure 1and Figure 4 The preparation method specifically comprises the following steps:

[0057] S1, growing a buffer layer 2 on a substrate 1.

[0058] Optionally, the substrate 1 is a 10-degree N-type GaAs substrate; the buffer layer 2 is a GaAs buffer layer, the growth thickness is 500 nm, the doping element is Si, and the doping amount is 2E 18 cm -3 The purpose of growing the buffer layer 2 is to connect the substrate 1 and the subsequently grown epitaxial layer, and reduce defects of the epitaxial layer.

[0059] S2, growing an N-type confinement layer 3 on the buffer layer 2.

[0060] Specifically, the N-type confinement layer 3 is an N-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, wherein 0.2≤y1≤0.5 and x=0.5.

[0061] Optionally, the growth thickness of the N-type confinement layer 3 is 800-1000 nm, the doping element is Si, and the doping amount is 3E 18 cm -3 .

[0062] S3, growing an N-type graded layer 4 on the N-type confinement layer 3.

[0063] Specifically, the N-type graded layer 4 is an N-type (Al 1-y Ga y ) x In 1-x P graded layer, wherein y is a grading amount, y gradually changes from y1 to 1 at this time, so that the (Al 1-y1 Ga y1 ) x In 1-x P material gradually changes into Ga x In 1-x P material, that is, the N-type confinement layer 3 gradually changes into the subsequent N-type waveguide layer 5, the growth thickness of the N-type graded layer 4 is 15-30 nm, the doping element is Si, and the doping amount is 5-8E 18 cm -3 , which is high doping, and the material resistance caused by material change can be reduced by using material grading and high doping, the working voltage of the device is reduced, and the light emitting efficiency of the product is increased.

[0064] S4, growing an N-type waveguide layer 5 on the N-type graded layer 4.

[0065] Specifically, the N-type waveguide layer 5 is an N-type Ga xIn 1-x P waveguide layer, wherein x=5; the growth thickness of the N-type waveguide layer 5 is 800-1000 nm, the doping element is Si, and the doping amount gradually changes from 3E 18 cm -3 to 1E 17 cm -3 ; that is, the N-type waveguide layer 5 gradually reduces the doping in the direction close to the subsequently grown quantum well layer 7, which can reduce the light absorption of the doping impurities, thereby reducing the light loss and helping to improve the photoelectric conversion efficiency of the quantum well structure.

[0066] S5, growing a first isolation layer 6 on the N-type waveguide layer 5.

[0067] Specifically, the first isolation layer 6 is an Al x Ga 1-x As isolation layer, wherein 0.1≤x≤0.45.

[0068] Optionally, the growth thickness of the first isolation layer 6 is 1-2 nm, which is an unintentionally doped layer.

[0069] S6, growing a quantum well layer 7 on the first isolation layer 6.

[0070] Specifically, the quantum well layer 7 is a GaAs x P 1-x quantum well layer 7, wherein 0.8≤x≤0.9.

[0071] Optionally, the growth thickness of the quantum well layer 7 is 10-13 nm, which is an unintentionally doped layer.

[0072] S7, growing a second isolation layer 8 on the quantum well layer 7.

[0073] Specifically, the material and growth thickness of the second isolation layer 8 are consistent with those of the first isolation layer 6. The first isolation layer 6 and the second isolation layer 8 are respectively grown on both sides of the quantum well layer 7, which utilizes the growth of the Al x Ga 1-x As material, slows down the influence of In inside the reaction chamber on the GaAs x P 1-x quantum well layer 7, improves the growth conditions of the GaAsP quantum well, improves the material quality of the GaAsP quantum well, reduces the non-radiative recombination and carrier loss, and increases the light emission efficiency.

[0074] S8, growing a P-type waveguide layer 9 on the second isolation layer 8.

[0075] Specifically, the P-type waveguide layer 9 is a P-type Ga x In 1-xP waveguide layer, wherein x=5; the growth thickness of the P-type waveguide layer 9 is 300-400 nm, and the doping element is Mg, which is not easy to diffuse, so that the phenomenon of Zn diffusion to the quantum well region and reduction of the light emitting efficiency caused by the use of Zn element doping in the prior art can be avoided; and the doping amount gradually changes from 1E 17 cm -3 to 1.5E 18 cm -3 . The N-type waveguide layer 5 gradually reduces the doping in the direction close to the quantum well layer 7, so that the light absorption of the doping impurities can be reduced, the light loss is reduced, and the photoelectric conversion efficiency of the quantum well structure is improved.

[0076] S9, growing a P-type gradient layer 10 on the P-type waveguide layer 9.

[0077] Specifically, the P-type gradient layer 10 is a P-type (Al 1-y Ga y ) x In 1-x P gradient layer, wherein y is a gradient, y gradually changes from 1 to y1 at this time, so that Ga x In 1-x P material gradually changes to (Al 1-y1 Ga y1 ) x In 1-x P material, that is, the P-type waveguide layer 9 is gradually changed into a subsequent P-type confinement layer 11, the growth thickness of the P-type gradient layer 10 is 15-30 nm, the doping element is Zn, and the doping amount is 5-6E 18 cm -3 , which is also highly doped, and the N-type gradient layer 4 is the same, the material gradient and high doping can reduce the resistance caused by the change of the material, reduce the working voltage of the device, and increase the light emitting efficiency of the product.

[0078] S10, growing a P-type confinement layer 11 on the P-type gradient layer 10.

[0079] Specifically, the P-type confinement layer 11 is a P-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, wherein 0.2≤y1≤0.5, x=0.5, the doping element is Zn, which avoids the problem of large bulk resistance caused by the upper limit of the effective doping of the Mg element in the AlGaInP material. Moreover, if the P-type confinement layer 11 is doped with a conventional Mg element, the doping amount can only be doped to about 2E 18 cm -3 , and the present application uses Zn element doping, and the doping amount can reach 3-4E 18 cm -3 .

[0080] Optionally, the growth thickness of the P-type confinement layer 11 is 500-700nm.

[0081] S11, growing a P-type ohmic contact layer 12 on the P-type confinement layer 11.

[0082] Optionally, the material of the P-type ohmic layer is GaAs, the growth thickness is 100-300nm, the doping element is P-type doping element C, and the doping amount reaches 1E 20 cm -3 .

[0083] It is worth noting that the thickness of the substrate 1, the buffer layer 2, the N-type confinement layer 3, the N-type grading layer 4, the N-type waveguide layer 5, the first isolation layer 6, the quantum well layer 7, the second isolation layer 8, the P-type waveguide layer 9, the P-type grading layer 10, the P-type confinement layer 11, and the P-type ohmic contact layer 12 shown in the drawings of the present application are only examples and do not represent their true thicknesses. Moreover, the true proportions between the substrate 1, the buffer layer 2, the N-type confinement layer 3, the N-type grading layer 4, the N-type waveguide layer 5, the first isolation layer 6, the quantum well layer 7, the second isolation layer 8, the P-type waveguide layer 9, the P-type grading layer 10, the P-type confinement layer 11, and the P-type ohmic contact layer 12 are not as shown in the drawings, but are only for reference.

[0084] The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between various embodiments can be referred to each other.

[0085] The above description of disclosed embodiments enables a person skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A high-power 808nm semiconductor laser epitaxial structure, characterized by: The invention comprises a substrate, a buffer layer, an N-type confinement layer, an N-type waveguide layer, a first isolation layer, a quantum well layer, a second isolation layer, a P-type waveguide layer, a P-type confinement layer, and a P-type ohmic contact layer stacked in sequence from bottom to top; The quantum well layer is GaAs x P 1-x Quantum well layer, wherein 0.8≤x≤0.9; the first isolation layer and the second isolation layer are both Al x Ga 1-x As isolation layer, where 0.1≤x≤0.45; The N-type waveguide layer is N-type Ga x In 1-x P waveguide layer; the P waveguide layer is P-type Ga x In 1-x The P waveguide layer is doped with Mg; the P-type confinement layer is P-type (Al 1-y1 Ga y1 ) x In 1-x P limiting layer, doping element is Zn, doping amount is 3-4E 18 cm -3 ; A P-type gradient layer is provided between the P-type waveguide layer and the P-type confinement layer. The P-type gradient layer is P-type (Al 1-y Ga y ) x In 1- x P gradient layer, where y is the gradient variable, y changes from 1 to y1, so that Ga x In 1-x P material gradually changes to (Al 1-y1 Ga y1 ) x In 1-x P material, the P type (Al 1-y Ga y ) x In 1-x The doping element of the P graded layer is Zn; Using Al x Ga 1-x The growth of As material slows down the In-GaAs reaction in the reaction chamber. x P 1-x The influence of the quantum well layer improves the growth conditions of the GaAsP quantum well, improves the material quality of the GaAsP quantum well, reduces the loss of non-radiative recombination and carriers, and increases the luminous efficiency.

2. The high-power 808 nm semiconductor laser epitaxial structure according to claim 1, wherein: An N-type gradient layer is provided between the N-type confinement layer and the N-type waveguide layer. The N-type confinement layer is N-type (Al 1-y1 Ga y1 ) x In 1-x P limiting layer, the N-type graded layer is N-type (Al 1-y Ga y ) x In 1-x P gradient layer, where y is the gradient variable, y changes from y1 to 1 so that (Al 1- y1 Ga y1 ) x In 1-x P material gradually changes to Ga x In 1-x P material.

3. The high-power 808 nm semiconductor laser epitaxial structure according to claim 2, wherein: The N-type (Al 1-y Ga y ) x In 1-x P graded layer and P type (Al 1-y Ga y ) x In 1-x The thickness of the P graded layer is 15-30nm. 1- y Ga y ) x In 1-x The doping element of the P gradient layer is Si, and the doping amount is 5-8E 18 cm -3 , the P-type (Al 1-y Ga y ) x In 1-x The doping element of the P graded layer is Zn, and the doping amount is 5-6E 18 cm -3 .

4. The high-power 808 nm semiconductor laser epitaxial structure according to claim 2, wherein: The N-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer and P type (Al 1-y1 Ga y1 ) x In 1-x In the P confinement layer, 0.2≤y1≤0.5, x=0.5; the N-type (Al 1-y1 Ga y1 ) x In 1-x The thickness of the P limiting layer is 800-1000nm, the doping element is Si, and the doping amount is 3E 18 cm -3 ; The P type (Al 1-y1 Ga y1 ) x In 1-x The thickness of the P confinement layer is 500-700 nm, and the doping element is Zn.

5. The high-power 808 nm semiconductor laser epitaxial structure according to claim 2, characterized in that: The N-type Ga x In 1-x P waveguide layer and P-type Ga x In 1-x In the P waveguide layer, x=0.5; the N-type Ga x In 1-x The thickness of the P waveguide layer is 800-1000nm, the doping element is Si, and the doping amount is from 3E 18 cm -3 Gradual to 1E 17 cm -3 The P-type Ga x In 1-x The thickness of the P waveguide layer is 300-400nm, the doping element is Mg, and the doping amount is from 1E 17 cm -3 Gradual to 1.5E 18 cm -3 .

6. The high-power 808 nm semiconductor laser epitaxial structure according to claim 1, characterized in that: The thickness of the first isolation layer and the second isolation layer are both 1-2 nm, and they are non-intentionally doped layers.

7. The high-power 808 nm semiconductor laser epitaxial structure according to claim 1, characterized in that: The quantum well layer has a thickness of 10-13 nm and is a non-intentionally doped layer.

8. The high-power 808 nm semiconductor laser epitaxial structure according to claim 1, characterized in that: The buffer layer is a GaAs buffer layer with a thickness of 500 nm, and the doping element is Si with a doping amount of 2E 18 cm -3 .

9. A method for manufacturing a high-power 808 nm semiconductor laser epitaxial structure according to any one of claims 1 to 8, characterized in that: The following steps are involved: growing a buffer layer on the substrate; growing an N-type confinement layer on the buffer layer; growing an N-type waveguide layer on the N-type confinement layer; growing a first isolation layer on the N-type waveguide layer; A quantum well layer is grown on the first isolation layer, wherein the quantum well layer is GaAs x P 1-x a quantum well layer, wherein 0.8≤x≤0.9; A second isolation layer is grown on the quantum well layer, wherein the first isolation layer and the second isolation layer are both Al x Ga 1-x As isolation layer, where 0.1≤x≤0.45; A P-type waveguide layer is grown on the second isolation layer. The P-type waveguide layer is a P-type Ga x In 1-x P waveguide layer, doped with Mg; A P-type confinement layer is grown on the P-type waveguide layer. The P-type confinement layer is a P-type (Al 1-y1 Ga y1 ) x In 1-x P limiting layer, doping element is Zn, doping amount is 3-4E 18 cm -3 ; A P-type graded layer is grown between the P-type waveguide layer and the P-type confinement layer. The P-type graded layer is P-type (Al 1-y Ga y ) x In 1-x P gradient layer; where y is the gradient variable, y changes from 1 to y1, making Ga x In 1-x P material gradually changes to (Al 1-y1 Ga y1 ) x In 1-x P material; A P-type ohmic contact layer is grown on the P-type confinement layer.

10. A method for manufacturing a high-power 808nm semiconductor laser epitaxial structure according to claim 9, characterized in that: The following steps are also included: An N-type graded layer is grown between the N-type confinement layer and the N-type waveguide layer. The N-type confinement layer is N-type (Al 1-y1 Ga y1 ) x In 1-x P confinement layer, the N-type waveguide layer is N-type Ga x In 1-x P waveguide layer, the N-type graded layer is N-type (Al 1-y Ga y ) x In 1-x P gradient layer, where y is the gradient variable, y changes from y1 to 1 so that (Al 1-y1 Ga y1 ) x In 1-x P material gradually changes to Ga x In 1-x P material.

Images