LED transfer method and LED transfer equipment
By utilizing the combination of magnetic structure and adhesive layer during the LED transfer process, the problem of electrode column damage during Micro LED transfer is solved, achieving a higher transfer success rate and efficiency.
Patent Information
- Application Number
- CN202510789573.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-13
- Publication Date
- 2025-10-03
- Estimated Expiration
- 2045-06-13
AI Technical Summary
In existing Micro LED mass transfer technology, the LED electrode columns are easily damaged during transfer, resulting in a reduced transfer success rate.
A method and device for transferring LEDs are adopted. By setting a magnetic structure and an adhesive layer on a growth substrate and a transient substrate, the electrode columns of the LED are inserted into the adhesive layer by utilizing the repulsive force and preset pressure of the magnetic structure. During the transfer process, the electrode columns are prevented from abutting against the substrate and the magnetic structure. Combined with the steps of debonding and removing the sacrificial layer, the safe transfer of the LED is achieved.
It effectively avoids damage to the LED electrode column during the transfer process and improves the transfer success rate and efficiency.
Smart Images

Figure CN120302786B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of display technology, and in particular to a method and device for transferring LEDs. Background Art
[0002] Compared to traditional LCD panels, Micro LED (Micro-LED) display panels offer advantages such as higher resolution, better contrast, faster response time, and lower energy consumption, and are therefore considered the next generation of display technology. After Micro LED production is complete, tens to hundreds of thousands of Micro LEDs need to be transferred to a driver circuit board to form an LED array. This process is known as "mass transfer."
[0003] The current Micro LED mass transfer technology has the problem that the LED electrode columns will be damaged during transfer, resulting in a lower success rate in improving the LED transfer. Summary of the Invention
[0004] The purpose of this application is to provide an LED transfer method and LED transfer equipment to avoid damage to the electrode columns of the LED during transfer and improve the success rate of LED transfer.
[0005] The present application discloses a method for transferring an LED, which is used to transfer an LED on a growth substrate to a transient substrate. The method comprises the following steps:
[0006] Providing a growth substrate and a transient substrate, wherein the growth substrate includes a growth substrate, an LED, and a first magnetic structure, wherein the first magnetic structure and the LED are both disposed on the growth substrate; and the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, wherein the second magnetic structure and the first adhesive layer are both disposed on the transient substrate;
[0007] The side of the growth substrate provided with the LED and the side of the temporary substrate provided with the first adhesive layer are opposite to each other, with the electrode column of the LED facing the first adhesive layer, and the first magnetic structure on the growth substrate and the second magnetic structure on the temporary substrate adjacent to each other have the same polarity;
[0008] Applying a first preset pressure to the growth substrate or the temporary substrate so that the distance between the growth substrate and the temporary substrate gradually decreases, so that the electrode column of the LED is inserted into the first adhesive layer of the temporary substrate until the LED stops moving due to the repulsive force of the first magnetic structure and the second magnetic structure, and the first preset pressure prevents the electrode column of the LED from abutting against the temporary substrate and the second magnetic structure;
[0009] The growth substrate and LED are separated to transfer the LED to the temporary substrate.
[0010] Optionally, the first magnetic structure is arranged on a side of the electrode column of the LED away from the substrate; the growth substrate further comprises a sacrificial layer, and the sacrificial layer is arranged between the electrode column of the LED and the first magnetic structure;
[0011] After the step of separating the growth substrate and the LED to transfer the LED to the temporary substrate, the method further comprises:
[0012] Providing a transfer substrate, the transfer substrate comprising a transfer substrate and a second adhesive layer, wherein the second adhesive layer is disposed on the transfer substrate;
[0013] The side of the transfer substrate provided with the second adhesive layer is opposite to the side of the temporary substrate provided with the first adhesive layer, and the LED chip faces the second adhesive layer;
[0014] Applying a second preset pressure to the transfer substrate or the temporary substrate so that the distance between the transfer substrate and the temporary substrate gradually decreases, so that the LED chip is bonded to the second adhesive layer of the transfer substrate;
[0015] Debonding the first adhesive layer;
[0016] Applying a third preset pressure to the transfer substrate or the temporary substrate away from each other to transfer the LED to the second adhesive layer on the transfer substrate;
[0017] The sacrificial layer is removed to separate the first magnetic structure from the electrode column of the LED.
[0018] Optionally, in the step of providing a growth substrate and a transient substrate, wherein the growth substrate includes a growth substrate, an LED, and a first magnetic structure, wherein the first magnetic structure and the LED are both disposed on the growth substrate; and wherein the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, wherein the second magnetic structure and the first adhesive layer are both disposed on the transient substrate:
[0019] The first magnetic structure is disposed on the growth substrate, and the first magnetic structure is located between two adjacent LEDs;
[0020] After the step of separating the growth substrate and the LED to transfer the LED to the temporary substrate, the method further comprises:
[0021] Providing a transfer substrate, the transfer substrate comprising a transfer substrate and a second adhesive layer, wherein the second adhesive layer is disposed on the transfer substrate;
[0022] The side of the transfer substrate provided with the second adhesive layer is opposite to the side of the temporary substrate provided with the first adhesive layer, and the LED chip faces the second adhesive layer;
[0023] Applying a second preset pressure to the transfer substrate or the temporary substrate so that the distance between the transfer substrate and the temporary substrate gradually decreases, so that the LED chip is bonded to the second adhesive layer of the transfer substrate;
[0024] Debonding the first adhesive layer;
[0025] A third preset pressure is applied to the transfer substrate or the temporary substrate away from each other to transfer the LED to the second adhesive layer on the transfer substrate.
[0026] The present application also discloses an LED transfer device, wherein the LED includes a chip and an electrode column, wherein the electrode column is connected to the chip; the LED transfer device includes:
[0027] a first machine, comprising an LED generating device, a first magnetic structure generating device, and a growth substrate, wherein the growth substrate comprises a growth substrate, an LED, and a first magnetic structure, wherein the first magnetic structure and the LED are arranged on the growth substrate; the LED generating device is used to form the LED on the growth substrate; and the first magnetic structure is used to form the first magnetic structure on the growth substrate;
[0028] a second machine, the second machine comprising a temporary substrate, a growth substrate peeling device and a pressing device, the temporary substrate comprising a temporary substrate, a second magnetic structure and a first adhesive layer, the second magnetic structure and the first adhesive layer being disposed on the temporary substrate;
[0029] The pressing device is used to apply a first preset pressure to the growth substrate or the temporary substrate, gradually reducing the distance between the growth substrate and the temporary substrate so that the electrode column of the LED is inserted into the first adhesive layer of the temporary substrate until the LED stops moving due to the repulsive force of the first magnetic structure and the second magnetic structure. The first preset pressure prevents the electrode column of the LED from abutting against the temporary substrate and the second magnetic structure.
[0030] The growth substrate peeling device is used to separate the growth substrate and the LED.
[0031] Optionally, the second machine further includes a debonding device and a transfer substrate, the transfer substrate includes a transfer substrate and a second adhesive layer, and the second adhesive layer is provided on the transfer substrate;
[0032] The second adhesive layer on the transfer substrate is used to bond the LED chip;
[0033] The debonding device is used to debond the first adhesive layer.
[0034] Optionally, the first magnetic structure is arranged on a side of the electrode column of the LED away from the growth substrate.
[0035] Optionally, the growth substrate further includes a sacrificial layer, and the sacrificial layer is disposed between the electrode column of the LED and the first magnetic structure.
[0036] Optionally, the first magnetic structure is provided on the growth substrate, and the first magnetic structure is located between two adjacent LEDs.
[0037] Optionally, the second magnetic structure is arranged on a side of the temporary substrate close to the first adhesive layer, and the temporary substrate further includes a padding block, which is arranged between the second magnetic structure and the temporary substrate, and the sum of the thickness of the padding block and the thickness of the second magnetic structure is less than the thickness of the first adhesive layer.
[0038] Optionally, the growth substrate further includes a third magnetic structure, and the third magnetic structure is arranged on a side of the electrode column of the LED away from the growth substrate;
[0039] The temporary substrate further includes a fourth magnetic structure, the fourth magnetic structure is disposed on the temporary substrate, and the fourth magnetic structure and the second magnetic structure are spaced apart;
[0040] The third magnetic structure and the fourth magnetic structure are used to apply a first preset pressure to the growth substrate or the temporary substrate to bring them closer to each other, and the distance between the growth substrate and the temporary substrate gradually decreases, so that an attractive force is generated when the electrode column of the LED is inserted into the first adhesive layer of the temporary substrate.
[0041] Compared with the existing LED transfer method, the LED transfer method of the present application applies a first preset pressure to the growth substrate or the temporary substrate so that the LED no longer moves under the action of the repulsive force of the first magnetic structure and the second magnetic structure. In addition, the first preset pressure prevents the electrode column of the LED from abutting against the temporary substrate and the second magnetic structure, thereby avoiding the electrode column of the LED from abutting against the temporary substrate and the second magnetic structure, thereby avoiding damage to the electrode column of the LED during transfer and improving the success rate of LED transfer. BRIEF DESCRIPTION OF THE DRAWINGS
[0042] The included drawings are used to provide a further understanding of the embodiments of the present application, which constitute a part of the specification, are used to illustrate the implementation methods of the present application, and together with the text description, explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without inventive work. In the drawings:
[0043] Figure 1 This is a schematic flow chart of a first LED transfer method according to an embodiment of the present application;
[0044] Figure 2a 1 is a schematic diagram of the first stage of the process of the first LED transfer method according to an embodiment of the present application;
[0045] Figure 2b 1 is a schematic diagram of the second stage process of the first LED transfer method according to an embodiment of the present application;
[0046] Figure 2c 1 is a schematic diagram of the third stage of the process of the first LED transfer method according to an embodiment of the present application;
[0047] Figure 3 1 is a flow chart of a second LED transfer method according to an embodiment of the present application;
[0048] Figure 4 is a schematic diagram of a first LED transfer device according to an embodiment of the present application;
[0049] Figure 5 is a schematic diagram of a growth substrate in a first LED transfer device according to an embodiment of the present application;
[0050] Figure 6 is a schematic diagram of a transient substrate in a first LED transfer device according to an embodiment of the present application;
[0051] Figure 7 This is a schematic diagram of an LED electrode column in a growth substrate inserted into a first adhesive layer of a temporary substrate in a first LED transfer device according to an embodiment of the present application;
[0052] Figure 8 1 is a schematic diagram of a transfer substrate in a first LED transfer device according to an embodiment of the present application;
[0053] Figure 9 is a schematic diagram of a first magnetic structure in a first LED transfer device according to an embodiment of the present application;
[0054] Figure 10is a schematic diagram of a second LED transfer device according to an embodiment of the present application;
[0055] Figure 11 is a schematic diagram of a growth substrate of a second LED transfer device according to an embodiment of the present application;
[0056] Figure 12 is a schematic diagram of a transient substrate of a second LED transfer device according to an embodiment of the present application;
[0057] Figure 13 This is a schematic diagram of inserting an electrode column of an LED in a growth substrate onto a first adhesive layer of a temporary substrate in a second LED transfer device according to an embodiment of the present application;
[0058] Figure 14 is a schematic diagram of a growth substrate of a third LED transfer device according to an embodiment of the present application;
[0059] Figure 15 is a schematic diagram of a temporary substrate of a third LED transfer device according to an embodiment of the present application;
[0060] Figure 16 This is a schematic diagram of inserting an electrode column of an LED in a growth substrate into a first adhesive layer of a temporary substrate in a third LED transfer device according to an embodiment of the present application.
[0061] Among them, 10, LED transfer equipment; 200, first machine; 210, LED generating device; 220, first magnetic structure generating device; 300, growth substrate; 310, growth substrate; 320, LED; 321, chip; 322, electrode column; 340, sacrificial layer; 341, groove; 350, first magnetic structure; 360, third magnetic structure; 400, second machine; 410, growth substrate peeling device; 420, pressing device; 500, temporary substrate; 510, temporary substrate; 520, second magnetic structure; 530, fourth magnetic structure; 540, first adhesive layer; 550, debonding device; 560, padding block; 570, first magnetic structure removing device; 600, transfer substrate; 610, transfer substrate; 620, second adhesive layer; 700, driving backplane. DETAILED DESCRIPTION
[0062] It should be understood that the terms used herein, the specific structures and functional details disclosed are only for describing specific embodiments and are representative. However, the present application can be implemented in many alternative forms and should not be construed as being limited to the embodiments described herein.
[0063] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate relative importance or implicitly specify the quantity of the technical features indicated. Therefore, unless otherwise specified, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features; "plurality" means two or more. The term "comprising" and any variations thereof are intended to be non-exclusive inclusion, and one or more other features, integers, steps, operations, units, components, and / or combinations thereof may be present or added.
[0064] In addition, terms indicating orientation or positional relationships such as “center,” “lateral,” “up,” “down,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inside,” and “outside” are described based on the orientation or relative positional relationships shown in the accompanying drawings. They are merely simplified descriptions for the convenience of describing the present application, and do not indicate that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on the present application.
[0065] Furthermore, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; or internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on specific circumstances.
[0066] The present application is described in detail below with reference to the accompanying drawings and optional embodiments.
[0067] Figure 1 This is a flow chart of a first LED transfer method according to an embodiment of the present application. Figure 2a This is a schematic diagram of the first stage of the process of the first LED transfer method according to an embodiment of the present application. Figure 2b This is a schematic diagram of the second stage process of the first LED transfer method according to an embodiment of the present application. Figure 2c FIG. 1 is a schematic diagram of the third stage process of the first LED transfer method according to an embodiment of the present application. Figure 1-2c As shown, the present application discloses a method for transferring an LED, which is used to transfer an LED 320 on a growth substrate 300 to a transient substrate 500. The method comprises the following steps:
[0068] S1: Provide a growth substrate and a temporary substrate, wherein the growth substrate includes a growth substrate, an LED and a first magnetic structure, and the first magnetic structure and the LED are both arranged on the growth substrate; the temporary substrate includes a temporary substrate, a second magnetic structure and a first adhesive layer, and the second magnetic structure and the first adhesive layer are both arranged on the temporary substrate 510.
[0069] The first adhesive layer 540 can be made of either PMMA or PI. The first magnetic structure 350 can be made of either a permanent magnetic material or an electromagnetic material. The second magnetic structure 520 can be made of either a permanent magnetic material or an electromagnetic material. Furthermore, the thickness of the first adhesive layer 540 is greater than the height of the electrode pillars 322 of the LED 320.
[0070] S2: The side of the growth substrate on which the LED is provided and the side of the temporary substrate on which the first adhesive layer is provided are opposite to each other, with the electrode column of the LED facing the first adhesive layer, and the first magnetic structure on the growth substrate and the second magnetic structure on the temporary substrate having the same polarity on their sides close to each other.
[0071] For example, the growth substrate 300 can be moved above the temporary substrate 500, and the side of the growth substrate 300 provided with the LED 320 and the side of the temporary substrate 500 provided with the first adhesive layer 540 are opposite to each other, so that the electrode column 322 of the LED 320 can face the first adhesive layer 540, and the first magnetic structure 350 on the growth substrate 300 and the second magnetic structure 520 on the temporary substrate 500 are close to each other. The polarity is the same, generating a repulsive force.
[0072] S3: Applying a first preset pressure to the growth substrate or the temporary substrate so that the two are close to each other, and gradually reducing the distance between the growth substrate and the temporary substrate, so that the electrode column of the LED is inserted into the first adhesive layer of the temporary substrate until the LED stops moving under the repulsive force of the first magnetic structure and the second magnetic structure. The first preset pressure prevents the electrode column of the LED from abutting against the temporary substrate and the second magnetic structure.
[0073] Among them, as the distance between the growth substrate 300 and the temporary substrate 500 gradually decreases, the repulsive force between the first magnetic structure 350 and the second magnetic structure 520 gradually increases. By calculating the repulsive force between the first magnetic structure 350 and the second magnetic structure 520 when the electrode column 322 of the LED 320 is inserted into the first adhesive layer 540 and the electrode column 322 of the LED 320 is not abutting against the temporary substrate 510 and the second magnetic structure 520, it is defined as the maximum repulsive force, and the first preset pressure is less than the maximum repulsive force.
[0074] For example, a first preset pressure can be applied to the growth substrate 300, and the first preset pressure is less than the maximum repulsive force between the first magnetic structure 350 and the second magnetic structure 520, so that the electrode column 322 of the LED 320 can stop moving downward when it does not abut the temporary substrate 510 and the second magnetic structure 520.
[0075] S4: Separating the growth substrate and the LED to transfer the LED to the temporary substrate.
[0076] Laser Lift-off (LLO), a technique that uses laser energy to decompose materials, may be used to separate the growth substrate 310 and the LED 320 , so as to complete the transfer of the LED 320 to the temporary substrate 500 .
[0077] Compared with the existing LED transfer method, the LED transfer method of the present application applies a first preset pressure to the growth substrate 300 or the temporary substrate 500 to make them close to each other, and the first preset pressure cooperates with the repulsive force of the first magnetic structure 350 and the second magnetic structure 520 to prevent the LED 320 from moving. In addition, the first preset pressure prevents the electrode column 322 of the LED 320 from abutting against the temporary substrate 510 and the second magnetic structure 520, thereby avoiding the electrode column 322 of the LED 320 from abutting against the temporary substrate 510 and the second magnetic structure 520, thereby avoiding damage to the electrode column 322 of the LED 320 during transfer, thereby improving the transfer success rate of the LED 320.
[0078] See also Figure 2a-2c In the first LED transfer method, the first magnetic structure 350 is arranged on the side of the electrode column 322 of the LED 320 away from the substrate; the growth substrate 300 also includes a sacrificial layer 340, and the sacrificial layer 340 is arranged between the electrode column 322 of the LED 320 and the first magnetic structure 350; in simple terms, the sacrificial layer 340 is first arranged on the electrode column 322 of the LED 320, and then the first magnetic structure 350 is arranged on the sacrificial layer 340.
[0079] After the step of S4: separating the growth substrate and the LED to transfer the LED to the temporary substrate, the method further includes:
[0080] S51: providing a transfer substrate, wherein the transfer substrate comprises a transfer substrate and a second adhesive layer, wherein the second adhesive layer is disposed on the transfer substrate.
[0081] The material of the second adhesive layer 620 includes PDMS (polydimethylsiloxane).
[0082] S52: Aligning the side of the transfer substrate provided with the second adhesive layer with the side of the temporary substrate provided with the first adhesive layer to face each other, with the LED chip facing the second adhesive layer.
[0083] For example, the transfer substrate 600 can be moved above the temporary substrate 500, with the side of the transfer substrate 600 provided with the second adhesive layer 620 facing the side of the temporary substrate 500 provided with the first adhesive layer 540, so that the second adhesive layer 620 faces the chip 321 of the LED 320.
[0084] S53: applying a second preset pressure to the transfer substrate or the temporary substrate so that the distance between the transfer substrate and the temporary substrate gradually decreases, so that the LED chip is bonded to the second adhesive layer of the transfer substrate;
[0085] Exemplarily, a second preset pressure may be applied to the transfer substrate 600 toward the temporary substrate 500 , and the second preset pressure may be equal to the first preset pressure, so that the chip 321 of the LED 320 is bonded to the second adhesive layer 620 of the transfer substrate 600 .
[0086] S54: debonding the first adhesive layer;
[0087] For example, the first adhesive layer 540 may be debonded by thermal decomposition, photodecomposition, laser decomposition, or the like.
[0088] S55: applying a third preset pressure to the transfer substrate or the temporary substrate away from each other to transfer the LED to the second adhesive layer on the transfer substrate;
[0089] In simple terms, the transfer substrate 600 or the temporary substrate 500 is removed. For example, the transfer substrate 600 can be removed.
[0090] S56: removing the sacrificial layer to separate the first magnetic structure from the electrode column of the LED.
[0091] Since the first magnetic structure 350 is arranged on the electrode column 322 of the LED 320, the first magnetic structure 350 needs to be removed before the LED 320 is bound to the driver circuit board. The first LED transfer method is to provide a sacrificial layer 340 on the electrode column 322 of the LED 320. In this way, when the first magnetic structure 350 is removed, the sacrificial layer 340 can be removed to separate the first magnetic structure 350 from the electrode column 322 of the LED 320, so that the electrode column 322 of the LED 320 will not be damaged.
[0092] For example, the sacrificial layer 340 may be made of a photoresist, and then the sacrificial layer 340 may be removed using a photoresist stripping solution, thereby removing the first magnetic structure 350 on the electrode column 322 of the LED 320 in a more convenient and quick manner.
[0093] S6: Transfer the LEDs on the transfer substrate to the driver backplane.
[0094] Exemplarily, the removed transfer substrate 600 is moved above the driving backplane 700 , and then the second adhesive layer 620 is debonded, and finally the LED 320 is bonded to the driving backplane 700 , thereby completing the transfer of the LED 320 .
[0095] In the first LED transfer method, since the first magnetic structure 350 is disposed on the electrode column 322 of the LED 320, it can be made of a permanent magnetic material, and the second magnetic structure 520 is disposed on the growth substrate 310 and is therefore made of an electromagnetic material, and S54: debonding the first adhesive layer 540 further includes:
[0096] S541: increasing the current output to the second magnetic structure;
[0097] By increasing the current output to the second magnetic structure, the magnetic force of the second magnetic structure is increased, thereby increasing the repulsive force between the first magnetic structure and the second magnetic structure.
[0098] S542: debonding the first adhesive layer;
[0099] By increasing the repulsive force between the first magnetic structure 350 and the second magnetic structure 520 and then debonding the first adhesive layer 540, the interaction force between the second adhesive layer 620 and the chip 321 of the LED 320 can be increased, so that the chip 321 of the LED 320 can be more firmly adhered to the second adhesive layer 620 of the transfer substrate 610. In this way, there is no need to apply a large second preset pressure on the transfer substrate 610, and the LED 320 can be firmly adhered to the transfer substrate 610 while avoiding the LED 320 from moving downward and damaging the electrode column 322 of the LED 320, thereby better completing the transfer step.
[0100] Figure 3 This is a flow chart of a second LED transfer method according to an embodiment of the present application. Figure 3 As shown, the difference from the first LED transfer method is that the first magnetic structure 350 in the growth substrate 300 in the second LED transfer method is disposed on the growth substrate 310. Specifically:
[0101] In the step S1: providing a growth substrate and a transient substrate, wherein the growth substrate includes a growth substrate, an LED, and a first magnetic structure, wherein the first magnetic structure and the LED are both disposed on the growth substrate; and the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, wherein the second magnetic structure and the first adhesive layer are both disposed on the transient substrate:
[0102] The first magnetic structure 350 is disposed on the growth substrate 310 , and the first magnetic structure 350 is located between two adjacent LEDs 320 .
[0103] Then, after the step of separating the growth substrate and the LED to transfer the LED to the temporary substrate in step S4, the method further includes:
[0104] S51: providing a transfer substrate, wherein the transfer substrate comprises a transfer substrate and a second adhesive layer, wherein the second adhesive layer is disposed on the transfer substrate.
[0105] S52: Aligning the side of the transfer substrate provided with the second adhesive layer with the side of the temporary substrate provided with the first adhesive layer to face each other, with the LED chip facing the second adhesive layer.
[0106] S53: applying a second preset pressure to the transfer substrate or the temporary substrate so that the distance between the transfer substrate and the temporary substrate gradually decreases, so that the LED chip is bonded to the second adhesive layer of the transfer substrate.
[0107] S54: debonding the first adhesive layer.
[0108] S55: applying a third preset pressure to the transfer substrate or the temporary substrate away from each other to transfer the LED to the second adhesive layer on the transfer substrate.
[0109] Since the sacrificial layer 340 and the first magnetic structure 350 are not set on the electrode column 322 of the LED 320 in the second LED transfer method, the second LED transfer method does not need to perform the steps of removing the sacrificial layer 340 and the first magnetic structure 350. Compared with the first LED transfer method, the second LED transfer method does not need to remove the first magnetic structure 350 by setting the first magnetic structure 350 on the growth substrate 310, thereby reducing the transfer steps and improving the transfer efficiency.
[0110] Figure 4 This is a schematic diagram of a first LED transfer device according to an embodiment of the present application. Figure 5 Schematic diagram of a growth substrate in a first LED transfer device according to an embodiment of the present application. Figure 6 is a schematic diagram of a transient substrate in a first LED transfer device according to an embodiment of the present application. Figure 7 This is a schematic diagram of the first LED transfer device in an embodiment of the present application, wherein the electrode column of the LED in the growth substrate is inserted into the first adhesive layer of the transient substrate, combined with Figure 4-Figure 7 As shown, the present application discloses an LED transfer device 10, wherein the LED 320 includes a chip 321 and an electrode column 322, wherein the electrode column 322 is connected to the chip 321; the LED transfer device 10 includes:
[0111] The first machine 200 includes an LED generating device 210, a first magnetic structure generating device 220 and a growth substrate 300, the growth substrate 300 includes a growth substrate 310, an LED 320 and a first magnetic structure 350, the first magnetic structure 350 and the LED 320 are arranged on the growth substrate 310; the LED generating device 210 is used to form the LED 320 on the growth substrate 310; the first magnetic structure 350 is used to form the first magnetic structure 350 on the growth substrate 310.
[0112] The second machine 400 includes a temporary substrate 500, a growth substrate peeling device 410 and a pressing device 420. The temporary substrate 500 includes a temporary substrate 510, a second magnetic structure 520 and a first adhesive layer 540. The second magnetic structure 520 and the first adhesive layer 540 are arranged on the temporary substrate 510.
[0113] The pressing device 420 is used to apply a first preset pressure to the growth substrate 300 or the temporary substrate 500, bringing them closer to each other. The distance between the growth substrate 300 and the temporary substrate 500 gradually decreases, so that the electrode column 322 of the LED 320 is inserted into the first adhesive layer 540 of the temporary substrate 500 until the LED 320 no longer moves under the repulsive force of the first magnetic structure 350 and the second magnetic structure 520. The first preset pressure prevents the electrode column 322 of the LED 320 from abutting against the temporary substrate 510 and the second magnetic structure 520. The growth substrate peeling device 410 is used to separate the growth substrate 310 and the LED 320.
[0114] Compared with the existing LED transfer device 10, the LED transfer device 10 of the present application is configured by arranging an LED generating device 210, a first magnetic structure generating device 220 and a growth substrate 300 on a first machine 200, and the LED generating device 210 can form the LED 320 on the growth substrate 310; the first magnetic structure 350 can form the first magnetic structure 350 on the growth substrate 310.
[0115] In addition, a growth substrate peeling device 410 and a pressing device 420 are provided on the second machine 400. The pressing device 420 can apply a first preset pressure to the growth substrate 300 or the temporary substrate 500 so that the distance between the growth substrate 300 and the temporary substrate 500 gradually decreases, so that the electrode column 322 of the LED 320 is inserted into the first adhesive layer 540 of the temporary substrate 500 until the LED 320 no longer moves under the repulsive force of the first magnetic structure 350 and the second magnetic structure 520. The first preset pressure prevents the electrode column 322 of the LED 320 from abutting against the temporary substrate 510 and the second magnetic structure 520. The growth substrate peeling device 410 can separate the growth substrate 310 and the LED 320.
[0116] When the LED 320 on the growth substrate 300 is transferred to the temporary substrate 500, the LED 320 no longer moves under the repulsive force of the first magnetic structure 350 and the second magnetic structure 520, and the first preset pressure prevents the electrode column 322 of the LED 320 from abutting against the temporary substrate 510 and the second magnetic structure 520, thereby preventing the electrode column 322 of the LED 320 from abutting against the temporary substrate 510 and the second magnetic structure 520, thereby preventing the electrode column 322 of the LED 320 from being damaged during the transfer, thereby improving the transfer success rate of the LED 320.
[0117] In the first LED transfer apparatus 10, the first magnetic structure 350 is disposed on a side of the electrode pillars 322 of the LED 320 that is away from the growth substrate 310. This can reduce the distance between the first magnetic structure 350 and the second magnetic structure 520, thereby increasing the repulsive force generated between the first magnetic structure 350 and the second magnetic structure 520. This prevents the electrode pillars 322 of the LED 320 from abutting against the second magnetic structure 520 and the transient substrate 510, thereby preventing damage to the electrode pillars 322 of the LED 320.
[0118] The growth substrate 300 also includes a sacrificial layer 340, which is disposed between the electrode pillars 322 of the LED 320 and the first magnetic structure 350. The sacrificial layer 340 prevents damage to the electrode pillars 322 of the LED 320 when the first magnetic structure 350 is removed. The second machine 400 also includes a first magnetic structure removal device 570, which is used to remove the first magnetic structure 350 from the electrode pillars 322 of the LED 320.
[0119] Figure 8 This is a schematic diagram of a transfer substrate in a first LED transfer device according to an embodiment of the present application, Figure 8 As shown, the second machine 400 further includes a debonding device 550 and a transfer substrate 600. The transfer substrate 600 includes a transfer substrate 610 and a second adhesive layer 620 disposed on the transfer substrate 610. The second adhesive layer 620 on the transfer substrate 600 is used to adhere the chip 321 of the LED 320. The debonding device 550 is used to debond the first adhesive layer 540. The debonding device 550 and the transfer substrate 600 enable the LED 320 to be transferred from the temporary substrate 500 to the transfer substrate 600.
[0120] Figure 9 Schematic diagram of a first magnetic structure in a first LED transfer device according to an embodiment of the present application. Figure 9 As shown, the first magnetic structure 350 is spherical in shape, a groove 341 is provided on the side of the sacrificial layer 340 facing away from the electrode column 322 of the LED 320 , and the first magnetic structure 350 is disposed in the groove 341 .
[0121] When a first preset pressure is applied to the growth substrate 300 or the temporary substrate 500 to bring them closer to each other, the distance between the growth substrate 300 and the temporary substrate 500 gradually decreases, so that the electrode column 322 of the LED 320 is inserted into the first adhesive layer 540 of the temporary substrate 500 until the LED 320 no longer moves under the repulsive force of the first magnetic structure 350 and the second magnetic structure 520.
[0122] Since the second magnetic structure 520 will give the first magnetic structure 350 a deflection force, by setting a groove 341 on the side of the sacrificial layer 340 away from the electrode column 322 of the LED 320, and then setting the first magnetic structure 350 in the groove 341, when the first magnetic structure 350 is deflected, it can rotate relative to the sacrificial layer 340 without applying the deflection force to the electrode column 322 of the LED 320, thereby avoiding the situation where the electrode column 322 of the LED 320 is damaged when the first magnetic structure 350 and the second magnetic structure 520 are close to each other.
[0123] Figure 10 is a schematic diagram of a second LED transfer device according to an embodiment of the present application. Figure 11 Schematic diagram of a growth substrate of a second LED transfer device according to an embodiment of the present application. Figure 12 is a schematic diagram of a transient substrate of a second LED transfer device according to an embodiment of the present application. Figure 13 This is a schematic diagram of the second LED transfer device in an embodiment of the present application, wherein the electrode column of the LED in the growth substrate is inserted into the first adhesive layer of the transient substrate, as shown in FIG. Figure 10-13 As shown, the difference between the second LED transfer device 10 and the first LED transfer device 10 is that the first magnetic structure 350 is disposed on the growth substrate 310 , and the first magnetic structure 350 is located between two adjacent LEDs 320 .
[0124] Compared with the transfer device 10 of the first type of LED, since the sacrificial layer 340 and the first magnetic structure 350 are not set on the electrode column 322 of the LED 320 on the growth substrate 300 of the transfer device 10 of the second type of LED, the first magnetic structure removal device 570 does not need to be set in the transfer device 10 of the second type of LED, thereby reducing the transfer steps, improving the transfer efficiency and reducing the equipment cost.
[0125] Since the first magnetic structure 350 is disposed on the growth substrate 310, the distance between the first magnetic structure 350 and the second magnetic structure 520 becomes larger. Therefore, the distance between the first magnetic structure 350 and the second magnetic structure 520 can be reduced by providing a spacer block 560, as follows:
[0126] The second magnetic structure 520 is disposed on a side of the temporary substrate 510 proximal to the first adhesive layer 540. The temporary substrate 500 further includes a spacer 560 disposed between the second magnetic structure 520 and the temporary substrate 510. The sum of the thickness of the spacer 560 and the thickness of the second magnetic structure 520 is less than the thickness of the first adhesive layer 540. The spacer 560 reduces the distance between the first magnetic structure 350 and the second magnetic structure 520, thereby preventing the electrode pillars 322 of the LED 320 from contacting the temporary substrate 510, thereby preventing damage to the electrode pillars 322 of the LED 320.
[0127] Of course, the raising block 560 may not be provided, and a larger current may be applied to the second magnetic structure 520 to increase the magnetic force of the second magnetic structure 520 and thereby increase the repulsive force between the first magnetic structure 350 and the second magnetic structure 520 .
[0128] Figure 14 Schematic diagram of a growth substrate of a third LED transfer device according to an embodiment of the present application. Figure 15 is a schematic diagram of a temporary substrate of a third LED transfer device according to an embodiment of the present application. Figure 16 This is a schematic diagram of the LED electrode column in the growth substrate of the third LED transfer device in one embodiment of the present application being inserted into the first adhesive layer of the transient substrate, combined with Figure 14-16 As shown, the difference between the second LED transfer device 10 and the third LED transfer device 10 is that a third magnetic structure 360 is added to the growth substrate 300 and a fourth magnetic structure 530 is added to the transient substrate 500, as follows:
[0129] The growth substrate 300 also includes a third magnetic structure 360, which is arranged on the side of the electrode column 322 of the LED 320 away from the growth substrate 310; the temporary substrate 500 also includes a fourth magnetic structure 530, which is arranged on the temporary substrate 510, and the fourth magnetic structure 530 and the second magnetic structure 520 are arranged at intervals; the third magnetic structure 360 and the fourth magnetic structure 530 are used to apply a first preset pressure to the growth substrate 300 or the temporary substrate 500, so that the distance between the growth substrate 300 and the temporary substrate 500 gradually decreases, so that an attraction is generated when the electrode column 322 of the LED 320 is inserted into the first adhesive layer 540 of the temporary substrate 500.
[0130] Compared with the second type of LED transfer device 10, the growth substrate 300 of the third type of LED transfer device 10 adds a third magnetic structure 360 and the temporary substrate 500 adds a fourth magnetic structure 530, so that a first preset pressure is applied to the growth substrate 300 or the temporary substrate 500 so that the distance between the growth substrate 300 and the temporary substrate 500 gradually decreases, so that when the electrode column 322 of the LED 320 is inserted into the first adhesive layer 540 of the temporary substrate 500, an attractive force is generated, so that when the LED 320 on the growth substrate 300 is transferred to the temporary substrate 500, it can be transferred to a specific position on the temporary substrate 500; it should be noted that the mutual attraction force between the third magnetic structure 360 and the fourth magnetic structure 530 is smaller than the repulsive force between the first magnetic structure 350 and the second magnetic structure 520.
[0131] It should be noted that the limitations on the steps involved in this solution do not limit the order of the steps without affecting the implementation of the specific solution. The steps written in front can be executed first, later, or even simultaneously. As long as this solution can be implemented, it should be deemed to fall within the scope of protection of this application.
[0132] It should be noted that the inventive concept of this application can form a large number of embodiments, but the length of the application document is limited and it is impossible to list them one by one. Therefore, under the premise of no conflict, the various embodiments or technical features described above can be arbitrarily combined to form new embodiments. After the various embodiments or technical features are combined, the original technical effects will be enhanced.
[0133] The above content is a further detailed description of the present application in conjunction with specific optional implementation methods, and the specific implementation of the present application cannot be considered to be limited to these descriptions. For ordinary technicians in the technical field to which the present application belongs, they can make several simple deductions or substitutions without departing from the concept of the present application, which should be considered to fall within the scope of protection of the present application.
Claims
1. A method for transferring an LED from a growth substrate to a transient substrate, characterized in that: The LED transfer method comprises the following steps: Providing a growth substrate and a transient substrate, wherein the growth substrate includes a growth substrate, an LED, and a first magnetic structure, wherein the first magnetic structure and the LED are both disposed on the growth substrate; and the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, wherein the second magnetic structure and the first adhesive layer are both disposed on the transient substrate; The side of the growth substrate provided with the LED and the side of the temporary substrate provided with the first adhesive layer are opposite to each other, with the electrode column of the LED facing the first adhesive layer, and the first magnetic structure on the growth substrate and the second magnetic structure on the temporary substrate adjacent to each other have the same polarity; Applying a first preset pressure to the growth substrate or the temporary substrate so that the distance between the growth substrate and the temporary substrate gradually decreases, so that the electrode column of the LED is inserted into the first adhesive layer of the temporary substrate until the LED stops moving due to the repulsive force of the first magnetic structure and the second magnetic structure, and the first preset pressure prevents the electrode column of the LED from abutting against the temporary substrate and the second magnetic structure; The growth substrate and LED are separated to transfer the LED to the temporary substrate.
2. The LED transfer method according to claim 1, wherein: The first magnetic structure is arranged on a side of the electrode column of the LED away from the substrate; the growth substrate further comprises a sacrificial layer, the sacrificial layer being arranged between the electrode column of the LED and the first magnetic structure; After the step of separating the growth substrate and the LED to transfer the LED to the temporary substrate, the method further comprises: Providing a transfer substrate, the transfer substrate comprising a transfer substrate and a second adhesive layer, wherein the second adhesive layer is disposed on the transfer substrate; The side of the transfer substrate provided with the second adhesive layer is opposite to the side of the temporary substrate provided with the first adhesive layer, and the LED chip faces the second adhesive layer; Applying a second preset pressure to the transfer substrate or the temporary substrate so that the distance between the transfer substrate and the temporary substrate gradually decreases, so that the LED chip is bonded to the second adhesive layer of the transfer substrate; Debonding the first adhesive layer; Applying a third preset pressure to the transfer substrate or the temporary substrate away from each other to transfer the LED to the second adhesive layer on the transfer substrate; The sacrificial layer is removed to separate the first magnetic structure from the electrode column of the LED.
3. The LED transfer method according to claim 1, wherein: In the step of providing a growth substrate and a temporary substrate, wherein the growth substrate includes a growth substrate, an LED, and a first magnetic structure, wherein the first magnetic structure and the LED are both disposed on the growth substrate; and the temporary substrate includes a temporary substrate, a second magnetic structure, and a first adhesive layer, wherein the second magnetic structure and the first adhesive layer are both disposed on the temporary substrate: The first magnetic structure is disposed on the growth substrate, and the first magnetic structure is located between two adjacent LEDs; After the step of separating the growth substrate and the LED to transfer the LED to the temporary substrate, the method further comprises: Providing a transfer substrate, the transfer substrate comprising a transfer substrate and a second adhesive layer, wherein the second adhesive layer is disposed on the transfer substrate; The side of the transfer substrate provided with the second adhesive layer is opposite to the side of the temporary substrate provided with the first adhesive layer, and the LED chip faces the second adhesive layer; Applying a second preset pressure to the transfer substrate or the temporary substrate so that the distance between the transfer substrate and the temporary substrate gradually decreases, so that the LED chip is bonded to the second adhesive layer of the transfer substrate; Debonding the first adhesive layer; A third preset pressure is applied to the transfer substrate or the temporary substrate away from each other to transfer the LED to the second adhesive layer on the transfer substrate.
4. A transfer device for LEDs, wherein the LEDs include a chip and an electrode column, wherein the electrode column is connected to the chip; The LED transfer device includes: a first machine, comprising an LED generating device, a first magnetic structure generating device, and a growth substrate, wherein the growth substrate comprises a growth substrate, an LED, and a first magnetic structure, wherein the first magnetic structure and the LED are arranged on the growth substrate; the LED generating device is used to form the LED on the growth substrate; and the first magnetic structure is used to form the first magnetic structure on the growth substrate; a second machine, the second machine comprising a temporary substrate, a growth substrate peeling device and a pressing device, the temporary substrate comprising a temporary substrate, a second magnetic structure and a first adhesive layer, the second magnetic structure and the first adhesive layer being disposed on the temporary substrate; The pressing device is used to apply a first preset pressure to the growth substrate or the temporary substrate, gradually reducing the distance between the growth substrate and the temporary substrate so that the electrode column of the LED is inserted into the first adhesive layer of the temporary substrate until the LED stops moving due to the repulsive force of the first magnetic structure and the second magnetic structure. The first preset pressure prevents the electrode column of the LED from abutting against the temporary substrate and the second magnetic structure. The growth substrate peeling device is used to separate the growth substrate and the LED.
5. The LED transfer device according to claim 4, characterized in that: The second machine further includes a debonding device and a transfer substrate, wherein the transfer substrate includes a transfer substrate and a second adhesive layer, and the second adhesive layer is disposed on the transfer substrate; The second adhesive layer on the transfer substrate is used to bond the LED chip; The debonding device is used to debond the first adhesive layer.
6. The LED transfer device according to claim 4, characterized in that: The first magnetic structure is arranged on a side of the electrode column of the LED away from the growth substrate.
7. The LED transfer device according to claim 6, characterized in that: The growth substrate further includes a sacrificial layer disposed between the electrode pillars of the LED and the first magnetic structure.
8. The LED transfer device according to claim 4, characterized in that: The first magnetic structure is disposed on the growth substrate, and the first magnetic structure is located between two adjacent LEDs.
9. The LED transfer device according to claim 8, characterized in that: The second magnetic structure is arranged on a side of the temporary substrate close to the first adhesive layer. The temporary substrate also includes a spacer block, which is arranged between the second magnetic structure and the temporary substrate. The sum of the thickness of the spacer block and the thickness of the second magnetic structure is less than the thickness of the first adhesive layer.
10. The LED transfer device according to claim 8, characterized in that: The growth substrate further includes a third magnetic structure, wherein the third magnetic structure is arranged on a side of the electrode column of the LED away from the growth substrate; The temporary substrate further includes a fourth magnetic structure, the fourth magnetic structure is disposed on the temporary substrate, and the fourth magnetic structure and the second magnetic structure are spaced apart; The third magnetic structure and the fourth magnetic structure are used to apply a first preset pressure to the growth substrate or the temporary substrate to bring them closer to each other, and the distance between the growth substrate and the temporary substrate gradually decreases, so that an attractive force is generated when the electrode column of the LED is inserted into the first adhesive layer of the temporary substrate.
Citation Information
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