Light emitting device

Abstract

The invention discloses a light-emitting device which comprises a substrate, a thin film transistor, a light-emitting diode element, a pixel definition layer and a first conductive layer. The thin film transistor is arranged on the substrate, and the thin film transistor comprises an electrode. The light emitting diode element is arranged on the thin film transistor and is electrically connected with the thin film transistor. The pixel definition layer is arranged on the thin film transistor and comprises an opening, and the light emitting diode element is arranged in the opening. The first conductive layer comprises the electrode of the thin film transistor and a shared electrode wire, and the shared electrode wire is electrically connected with the light emitting diode element and a shared voltage source.

Description

[0001] This application is a divisional application of the invention patent application with the application date of July 9, 2019, the application number of 201910615934.9, and the invention title of "Light-emitting device and manufacturing method thereof". Technical Field

[0002] The present invention relates to a light-emitting device and a manufacturing method thereof, and particularly to a light-emitting device including a repair line and a manufacturing method thereof. Background Art

[0003] In recent years, with the progress of technology, information products have become indispensable daily necessities. Among them, the key components of information products include display devices, light source devices, and / or various light-emitting devices that can generate light. When the activity of the components of the light-emitting device is relatively high, the manufacturing difficulty is also relatively high. Therefore, how to improve the qualification rate of the light-emitting device remains an issue that the industry needs to continuously strive for. Summary of the Invention

[0004] One of the purposes of the present invention is to provide a light-emitting device and a manufacturing method thereof. According to the structure and manufacturing method of the light-emitting device of the present invention, defective light-emitting units can be repaired more effectively to improve the process qualification rate.

[0005] An embodiment of the present invention provides a light-emitting device, which includes a substrate, a thin-film transistor, a light-emitting diode element, a pixel definition layer, and a first conductive layer. The thin-film transistor is disposed on the substrate, and the thin-film transistor includes an electrode. The light-emitting diode element is disposed on the thin-film transistor and electrically connected to the thin-film transistor. The pixel definition layer is disposed on the thin-film transistor and includes an opening, and the light-emitting diode element is disposed in the opening. The first conductive layer includes the electrode of the thin-film transistor and a shared electrode wire, and the shared electrode wire is electrically connected to the light-emitting diode element and a shared voltage source. Description of the Drawings

[0006] Figure 1 It is a top view schematic diagram of the first embodiment of the light-emitting device of the present invention.

[0007] Figure 2 is Figure 1 A partial cross-sectional schematic diagram of the shown light-emitting device along the section lines A-A' and B-B'.

[0008] Figures 3 to 6 It is a flow schematic diagram of the first embodiment of the manufacturing method of the light-emitting device of the present invention.

[0009] Figure 7 It is a flow block diagram of the first embodiment of the manufacturing method of the light-emitting device of the present invention.

[0010] Figure 8Partial cross-sectional schematic diagram of the first variant embodiment of the first embodiment of the light-emitting device of the present invention.

[0011] Figure 9 Partial cross-sectional schematic diagram of the second variant embodiment of the first embodiment of the light-emitting device of the present invention.

[0012] Figure 10 Partial cross-sectional schematic diagram of the third variant embodiment of the first embodiment of the light-emitting device of the present invention.

[0013] Figure 11 Partial cross-sectional schematic diagram of the second embodiment of the light-emitting device of the present invention.

[0014] Figure 12 Structural schematic diagram of the third embodiment of the light-emitting device of the present invention.

[0015] Figure 13 Structural schematic diagram of the fourth embodiment of the light-emitting device of the present invention.

[0016] Figure 14 Partial top cross-sectional schematic diagram of the fifth embodiment of the light-emitting device and manufacturing method of the present invention.

[0017] Figures 15 to 16 Process schematic diagram of the sixth embodiment of the light-emitting device and manufacturing method of the present invention.

[0018] Figure 17 Top view schematic diagram of the seventh embodiment of the light-emitting device of the present invention.

[0019] Figure 18 is Figure 17 Cross-sectional schematic diagram of the shown light-emitting device along the section line C-C'.

[0020] Description of reference numerals: 100-light-emitting device; 102-substrate; 104, 104a, 104b-light-emitting unit; 106-pixel definition layer; 1061-opening; 110-circuit layer; 112-buffer layer; 114-first insulating layer; 116-second insulating layer; 118-third insulating layer; 120-protective layer; 122, 124, 126-equivalent circuit line; 130-chip; 132-conductive glue; 134-nozzle; AH, AH1, AH2 H2-housing hole; AHa-bottom surface; CE1, ce1, ce1'--first electrode; CE2, ce2, ce2'-second electrode; CL1-first wire; CL2-second wire; CM, CML-shared electrode wire; CME-shared electrode; CN-connection wire; CP-connection electrode; CT, CT'-open circuit process; DE-drain; Dx, Dy, Dz-direction; GE-gate; GI-gate insulation layer; LD1-first emitter Photodiode; LD2, LD2'-second light-emitting diode; ML1-first conductive layer; ML2-second conductive layer; ML5-fifth conductive layer; MQL-multiple quantum well layer; PL1-first flat layer; PL2-second flat layer; PL3-third flat layer; PTL-packaging layer; RE-reflective electrode; RL1, RL1'-first repair line; RL2-second repair line; RL21-first part; RL22-second part; RLa, RLb-part; SC-semiconductor layer; SE-source; SE1-first semiconductor layer; SE2-second semiconductor layer; SL-signal wire; SP1, SP2-spacing; SZ1, SZ2-size; TFT-thin film transistor; TH1, TH2, TH3, TH4, th1, th2, th3, th4, th1', th2', th3', th31', th32', th33', th4'-perforation; Wt1, Wt2-width. DETAILED DESCRIPTION

[0021] The present invention is described in detail below in conjunction with specific embodiments and drawings. It should be noted that in order to make it easier for readers to understand and the drawings are concise, the multiple drawings in the present invention only depict a portion of the device, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawing are only for illustration and are not intended to limit the scope of the present invention.

[0022] Throughout the specification and claims of the present invention, certain terms are used to refer to specific elements. Those skilled in the art should understand that electronic device manufacturers may use different names to refer to the same element. This document is not intended to distinguish between elements that have the same function but different names. In the following specification and claims, words such as "comprising" and "including" are open-ended terms and should therefore be interpreted as meaning "including but not limited to...". When the terms "comprising", "including" and / or "having" are used in this specification, they specify the presence of the stated features, regions, steps, operations and / or elements, but do not preclude the presence or addition of one or more other features, regions, steps, operations, elements and / or combinations thereof. When an element or film layer is said to be "on" or "connected to" another element or film layer, it can be directly on or directly connected to this other element or layer, or there may be intervening elements or film layers between the two. Conversely, when an element is said to be "directly" "on" or "directly connected to" another element or film layer, there are no intervening elements or film layers between the two.

[0023] Although terms such as "first", "second", "third", etc. may be used to describe or name different components, these components are not limited by these terms. These terms are only used to distinguish one component in the specification from other components and have nothing to do with the manufacturing order of these components. The same terms may not be used in the claims, and "first", "second", "third", etc. may be used in place of them according to the order of element declarations in the claims. Accordingly, in the following specification, the first component may be the second component in the claims.

[0024] It should be noted that, without departing from the spirit of the present invention, the features in several different embodiments can be replaced, reorganized, and mixed to complete other embodiments.

[0025] Please refer to Figures 1 to 2 , Figure 1 is a top view schematic diagram of the first embodiment of the light-emitting device of the present invention, Figure 2 is Figure 1Partial cross-sectional schematic views of the light-emitting device shown along section lines A-A' and B-B'. The light-emitting device 100 of the first embodiment of the present invention can be a light source device, a display device, a backlight device, a sensing device, or a splicing device, but is not limited thereto. The light-emitting device can be a bendable or flexible light-emitting device. The light-emitting device can, for example, include light-emitting diodes, and the light-emitting diodes can, for example, include inorganic light-emitting diodes (iLEDs), organic light-emitting diodes (OLEDs), mini light-emitting diodes (mini LEDs), micro light-emitting diodes (micro LEDs), or quantum dot light-emitting diodes (QDs, which can be, for example, QLEDs, QDLEDs), fluorescence, phosphorescence, or other suitable materials, and the materials can be arranged and combined arbitrarily, but are not limited thereto. The splicing device can, for example, be a spliced light-emitting device, but is not limited thereto. It should be noted that the light-emitting device can be any of the aforementioned arrangements and combinations, but is not limited thereto. Hereinafter, a display device will be used as the light-emitting device or the splicing device to illustrate the content of the present invention, but the present invention is not limited thereto. Furthermore, the light-emitting device 100 can be applied to any electronic product or electronic device that requires a light source or a light-emitting device, such as, for example, but not limited to, a television, a tablet computer, a laptop computer, a mobile phone, a camera, a wearable device, an electronic entertainment device, etc. In this embodiment, the light-emitting device 100 includes a display device as an example, and this display device can generate light of different colors to display a color picture, but is not limited thereto. The light-emitting device 100 includes a substrate 102 and at least one light-emitting unit 104 located on the substrate 102. Figure 1 The light-emitting device 100 shown includes a plurality of light-emitting units 104, arranged in an array along the horizontal direction Dx and the vertical direction Dy. As Figure 2, the area of the light-emitting unit 104 can be defined by the opening 1061 of the pixel definition layer 106, but it is not limited thereto. The light-emitting unit 104 includes a first light-emitting diode LD1 for emitting light. The first light-emitting diode LD1 can be an inorganic light-emitting diode (LED), an organic light-emitting diode (OLED), or other suitable types of light-emitting diodes or light-emitting elements. For example, in this embodiment, the first light-emitting diode LD1 can use an inorganic light-emitting diode, which can be a mini light-emitting diode (mini LED) or a micro light-emitting diode (micro LED), but it is not limited thereto. The first light-emitting diode LD1 may include, for example, a first electrode CE1, a second electrode CE2, a first semiconductor layer SE1, a second semiconductor layer SE2, and a multi quantum well (MQW) layer MQL disposed between the first semiconductor layer SE1 and the second semiconductor layer SE2. Among them, the first semiconductor layer SE1, the second semiconductor layer SE2, and the multi quantum well layer MQL can form a p-n diode. The first semiconductor layer SE1 is a p-type semiconductor layer, and the second semiconductor layer SE2 is an n-type semiconductor layer, or vice versa. Figure 1The first light-emitting diode LD1 shown is a lateral light-emitting diode, and its first electrode CE1 and a second electrode CE2 are both located on the upper surface of the first light-emitting diode LD1. However, the form of the first light-emitting diode LD1 of the present invention is not limited thereto, and it can also be other types of light-emitting diodes, such as vertical or flip-chip light-emitting diodes. According to the present invention, each of the first light-emitting diodes LD1 in the plurality of light-emitting units 104 can be the same type or different types of light-emitting diodes. For example, the first light-emitting diodes LD1 in different light-emitting units 104 can be light-emitting diodes that generate the same color of light, such as (but not limited to) white light-emitting diodes, blue light-emitting diodes, or ultraviolet light-emitting diodes. In some embodiments, the light-emitting unit 104 may further include a light conversion material disposed on the light-emitting diode, such as a quantum dot material. When the first light-emitting diodes LD1 are all blue light-emitting diodes or ultraviolet light-emitting diodes, different light conversion materials can be disposed in different light-emitting units 104 so that the plurality of light-emitting units 104 can emit different colors of light, such as blue, green, and red, but not limited thereto. For example, the light-emitting unit 104 can also generate yellow light. In addition, in some embodiments, the first light-emitting diodes LD1 of different light-emitting units 104 can be respectively provided with light-emitting diodes of different colors. For example, three adjacent light-emitting units 104 can respectively include a blue light-emitting diode, a red light-emitting diode, and a green light-emitting diode, and these three light-emitting units 104 can respectively serve as a sub-pixel of the display device and jointly form a pixel. In some instances, it can also be designed such that four light-emitting units 104 respectively including a red light-emitting diode, a green light-emitting diode, a blue light-emitting diode, and a white light-emitting diode form a group to form a pixel, but not limited thereto. Any applicable sub-pixel combination can be applied in the present invention. The light-emitting unit 104 of this embodiment further includes an accommodating hole AH. Each accommodating hole AH is respectively located on one side of the first light-emitting diode LD1 in the same light-emitting unit 104, and the first light-emitting diode LD1 and the accommodating hole AH in the same light-emitting unit 104 are adjacent to each other and separated from each other, that is, there is a spacing distance between the first light-emitting diode LD1 and the accommodating hole AH, which is represented by the spacing SP1.

[0026] According to the present invention, the accommodating hole AH can be used to dispose a second light-emitting diode LD2. Further, the accommodating holes AH in some of the light-emitting units 104 of the light-emitting device 100 are not provided with the second light-emitting diode LD2, while the accommodating holes AH in some other light-emitting units 104 can be provided with the second light-emitting diode LD2. Figure 1The above two cases are represented by the light-emitting unit 104a and the light-emitting unit 104b respectively, and the partial enlarged cross-sectional schematic diagrams of the light-emitting unit 104a and the light-emitting unit 104b are shown in Figure 2 . In the light-emitting unit 104b, a second light-emitting diode LD2 is provided in the accommodation hole AH, and its type may be the same as or different from that of the first light-emitting diode LD1. Figure 2 The second light-emitting diode LD2, taking the horizontal light-emitting diode as an example, has a first electrode ce1 and a second electrode ce2 provided on the upper surface of the second light-emitting diode LD2, but is not limited thereto. The size of the second light-emitting diode LD2 may be larger than, smaller than, or the same as that of the first light-emitting diode LD1. In some embodiments, the size of the second light-emitting diode LD2 is smaller than or equal to that of the first light-emitting diode LD1. Figure 2Taking the case where the size of the second light-emitting diode LD2 is smaller than that of the first light-emitting diode LD1 as an example, for instance, the size SZ1 of the first light-emitting diode LD1 (represented by the lateral width in the cross-sectional view) is greater than the size SZ2 of the second light-emitting diode LD2 (represented by the lateral width in the cross-sectional view), but it is not limited thereto. The ratio range of the size (area) of the second light-emitting diode LD2 to the size (area) of the first light-emitting diode LD1 is, for example, greater than or equal to 0.1 to less than or equal to 1, but it is not limited thereto. Furthermore, the light-emitting device 100 may include a first planar layer PL1 that partially covers the first light-emitting diode LD1 and is partially formed in the opening 1061 of the pixel definition layer 106. The first planar layer PL1 can serve as a protective layer to protect the circuit layer and the first light-emitting diode LD1. The first planar layer PL1 may contain an organic insulating material, such as perfluoroalkoxy alkane (PFA), epoxy resin, or other resin materials, but it is not limited thereto. In other embodiments, the first planar layer PL1 may contain an inorganic insulating material, such as silicon oxide (SiOx), silicon nitride (SiNx), aluminum oxide (AlOx), or silicon oxynitride (SiOxNy), but it is not limited thereto. The accommodating hole AH is located in the first planar layer PL1. For example, the first planar layer PL1 includes an accommodating hole AH in the light-emitting unit 104a and the light-emitting unit 104b respectively. Furthermore, a first wire CL1 and a second wire CL2 may be disposed on the first planar layer PL1 and are directly or indirectly electrically connected to the first electrode CE1 and the second electrode CE2 of the first light-emitting diode LD1 through the vias TH1 and TH2 in the first planar layer PL1 respectively. The first wire CL1 and the second wire CL2 may also be electrically connected to the electrical components located below the first light-emitting diode LD1 through the vias TH3 and TH4 in the first planar layer PL1 respectively. The first wire CL1 and the second wire CL2 may be formed by the same conductive layer. Furthermore, a second light-emitting diode LD2 is disposed in the accommodating hole AH in the light-emitting unit 104b, while no light-emitting diode is disposed in the accommodating hole AH in the light-emitting unit 104a. In addition, the light-emitting device 100 may further include a second planar layer PL2 that partially covers the first planar layer PL1 and partially fills the accommodating hole AH to cover the second light-emitting diode LD2. The second planar layer PL2 can serve as a protective layer to protect the second light-emitting diode LD2. The second planar layer PL2 may contain an organic insulating material or an inorganic insulating material, and its material may be the same as or different from that of the first planar layer PL1. Moreover, the second planar layer PL2 may contain a material with a protective function, such as a higher hardness or a function of preventing water and oxygen, so the second planar layer PL2 can also be referred to as a protective layer.The light-emitting device 100 may further include a first repair line RL1 and a second repair line RL2 formed on the second flat layer PL2, wherein at least a part RLa of the first repair line RL1 and the second repair line RL2 overlaps with the corresponding accommodation hole AH in the thickness direction Dz of the substrate 102 on the surface of the second flat layer PL2, that is, the projection area of the part RLa and the accommodation hole AH on the surface of the substrate 102 at least partially overlaps; another part RLb of the first repair line RL1 and the second repair line RL2 may extend into the second flat layer PL2 in the accommodation hole AH through the through holes th1 and th2 in the second flat layer PL2. The thickness direction Dz may be the normal direction of the plane of the substrate 102 or the direction of looking down on the substrate 102. Specifically, in the light-emitting unit 104a, the part RLb of the first repair line RL1 and the second repair line RL2 may extend in the second flat layer PL2 along the direction Dz parallel to the thickness of the substrate 102 (parallel to the thickness direction of the substrate 102) in the accommodation hole AH, but the first repair line RL1 and the second repair line RL2 do not contact the bottom surface of the accommodation hole AH, that is, there is a gap SP2 between the first repair line RL1 and the second repair line RL2 and the bottom surface AHa of the contact accommodation hole AH. The size of the gap SP2 is, for example, greater than or equal to 0.1 micrometer (μm) to less than or equal to 5 micrometers (μm), but not limited thereto. This design can reduce the probability of generating an additional leakage path. On the other hand, the first repair line RL1 and the second repair line RL2 in the light-emitting unit 104b are electrically connected to the first electrode ce1 and the second electrode ce2 of the second light-emitting diode LD2 through the through holes th1 and th2, respectively. In addition, the first repair line RL1 may also be electrically connected to the first wire CL1 through the through hole th3 in the second flat layer PL2, and the second repair line RL2 may be electrically connected to the electrical component below the accommodation hole AH through the through hole th4, wherein the through hole th4 may be formed in the second flat layer PL2, the first flat layer PL1, the pixel definition layer 106 and / or other insulating layers. It should be noted that at least a part of the side walls of the part RLb of the first repair line RL1 and the second repair line RL2 in contact with the through holes may be inclined surfaces or gentle slopes.

[0027] According to the present invention, the second light-emitting diode LD2 can be used to replace the failed (abnormal light emission or no light emission) first light-emitting diode LD1, so that the light-emitting unit 104 can emit light normally and complete the repair operation. Abnormal light emission can be, for example, that the chromaticity and / or brightness of the light emitted by the light-emitting diode do not meet the requirements, or the light emitted is abnormally flickering, etc., all of which belong to abnormal light emission. For example, during the manufacturing process of the light-emitting device 100, when it is found that the first light-emitting diode LD1 in the light-emitting unit 104b cannot effectively provide a light-emitting function or has an abnormal light-emission phenomenon, the second light-emitting diode LD2 can be arranged in the accommodation hole AH of the light-emitting unit 104b, and the second light-emitting diode LD2 and the corresponding switching element are electrically connected via the first repair line ce1 and the second repair line ce2, and the defective first light-emitting diode LD1 in the light-emitting unit 104b is electrically isolated from the switching element below it, then the second light-emitting diode LD2 can replace the first light-emitting diode LD1 to provide a light-emitting function. In addition, the light-emitting device 100 may further include a protective layer 120 covering the first repair line RL1, the second repair line RL2 and the second planar layer PL2. The protective layer 120 may include inorganic materials such as silicon oxide (SiOx), silicon nitride (SiNx), aluminum oxide (AlOx) or silicon oxynitride (SiOxNy), but is not limited thereto. The protective layer 120 may also include organic materials, such as PFA materials.

[0028] The light-emitting device 100 may further include a circuit layer 110 formed on the surface of the substrate 102. The circuit layer 110 may include multiple conductive lines and various electrical components, such as switching elements, driving elements, conductive lines (such as gate scan lines, data signal lines, common electrode lines, power supply lines, etc.) and / or capacitors, but not limited thereto. For example, the light-emitting device 100 may be an active display device, and the circuit layer 110 may include thin-film transistors (TFTs), which include a gate (GE), a source (SE), a drain (DE), and a semiconductor layer (SC). A gate insulating layer (GI) separates the gate (GE) and the semiconductor layer (SC). The thin-film transistor (TFT) may serve as a switching element or a driving element for the light-emitting diode. In the light-emitting unit 104a, the drain (DE) of the thin-film transistor (TFT) may be electrically connected to the first electrode (CE1) of the first light-emitting diode (LD1) via a first conductive line (CL1). In the light-emitting unit 104b, the drain (DE) of the thin-film transistor (TFT) may be electrically connected to the first electrode (ce1) of the second light-emitting diode (LD2) via a first repair line (RL1), and the thin-film transistor (TFT) and the first light-emitting diode (LD1) may be electrically isolated through an electrical isolation process (such as an open-circuit process (CT)). In addition, the source (SE) of the thin-film transistor (TFT) may be electrically connected to a signal line, and the gate (GE) may be electrically connected to a scan line, but not limited thereto. The circuit layer 110 may further include a common electrode line (CM) (or called a common electrode), which is connected to a common voltage source or an operating voltage source, and each common electrode line (CM) may be electrically connected to the second electrode (CE2) of the corresponding first light-emitting diode (LD1) or the second electrode (ce2) of the second light-emitting diode (LD2) via a connection element or a connection electrode (CP). The circuit layer 110 may also selectively include a reflective electrode (RE), which is disposed under the first light-emitting diode (LD1) and the accommodation hole (AH). The reflective electrode (RE) may be selected to be in a floating state, electrically connected to the common electrode, or grounded, and can provide the function of reflecting the light of the light-emitting diode as a reflector. In some embodiments, the gate (DE), the reflective electrode (RE), and the common electrode line (CM) may be formed of the same conductive layer, Figure 2 which is represented by the first conductive layer (ML1) herein. The source (SE), the drain (DE), and the connection electrode (CP) may be formed of the same conductive layer, Figure 2It is denoted by the second conductive layer ML2. The first conductive layer ML1 and the second conductive layer ML2 are respectively exemplified as a metal layer, but are not limited thereto. In addition, the circuit layer 110 may further include a buffer layer 112 disposed between the substrate 102 and the semiconductor layer SC, a first insulating layer 114 covering the first conductive layer ML1, a second insulating layer 116 selectively disposed on the first insulating layer 114, and a third insulating layer 118 disposed on the second conductive layer ML2. The first insulating layer 114, the second insulating layer 116, and the third insulating layer 118 may serve as a passivation layer or a protective layer, and may include inorganic materials or organic materials, but are not limited thereto. The circuit layer 110 may include a buffer layer 112 for lattice matching or protection between the substrate 102 and the layers of the circuit layer, and its material may be an inorganic insulating material, an organic insulating material, or a combination thereof.

[0029] Please refer to Figures 3 to 7 , wherein Figures 3 to 6 is a schematic flowchart of the first embodiment of the manufacturing method of the light-emitting device of the present invention, which shows a cross-sectional schematic diagram of the structures of the light-emitting units 104a and 104b of the light-emitting device, corresponding to Figure 1 the section lines A-A' and B-B' of Figure 7 is a flowchart block diagram of the first embodiment of the manufacturing method of the light-emitting device of the present invention. As Figure 3 and Figure 7As shown, the first embodiment of the manufacturing method of the light-emitting device of the present invention includes performing step S100. First, a substrate 102 is provided. The substrate 102 can be a rigid substrate or a flexible substrate. The material of the substrate 102 can, for example, include glass, quartz, sapphire, polyimide (PI), polycarbonate (PC), or polyethylene terephthalate (PET), or a combination of the foregoing, but is not limited thereto. Next, step S102 is performed to form a circuit layer 110 on the substrate 102. The circuit layer 110 can include multiple wires and various electrical components as described above, which will not be elaborated further. The formation of the circuit layer 110 is exemplified by sequentially forming a buffer layer 112, a semiconductor layer SC, a gate insulating layer GI, a first conductive layer ML1, a first insulating layer 114, and an optional second insulating layer 116. Then, vias are formed in the first insulating layer 114 and the second insulating layer 116, and then a second conductive layer ML2 is formed such that a part of the second conductive layer ML2 fills the vias. Finally, a third insulating layer 118 is formed. An adhesive layer can be selectively formed on the third insulating layer 118. Then, a pixel definition layer 106 can be selectively formed on the circuit layer 110, wherein the openings 1061 of the pixel definition layer 106 can define the ranges of the light-emitting units 104a and 104b. Then, step S104 is performed to dispose a first light-emitting diode LD1 of the light-emitting unit 104 and the light-emitting unit 104b on the substrate 102. When the first light-emitting diode LD1 is an inorganic light-emitting diode, a plurality of first light-emitting diodes LD1 can be simultaneously transferred and disposed in the openings 1061 of the respective light-emitting units 104 by means of mass transfer. For example, the first light-emitting diode LD1 can be fixed on the third insulating layer 118 by using the adhesive layer on the third insulating layer 118. In some embodiments, the first light-emitting diode LD1 can be fixed on the third insulating layer 118 by using molten metal. In other embodiments, the third insulating layer 118 itself can have adhesiveness to fix the first light-emitting diode LD1.

[0030] Next, step S106 is performed to fabricate a receiving hole AH for the light-emitting unit 104 on the substrate 102. The fabrication method includes first forming a first planar layer PL1 on the substrate 102 to cover the first light-emitting diode LD1, and then as Figure 4As shown, a patterning process is performed on the first flat layer PL1 to remove a part of the first flat layer PL1, so as to form accommodation holes AH in the first flat layer PL1, on one side of the first light-emitting diodes LD1 of the light-emitting units 104a and 104b respectively. The accommodation holes AH are adjacent to and separated from the first light-emitting diodes LD1 in the same light-emitting unit 104, that is, there is a spacing distance SP1 between the accommodation holes AH and the corresponding first light-emitting diodes LD1. In this patterning process, via holes TH1, TH2, TH3 and TH4 can also be formed in the first flat layer PL1 at the same time, wherein the via holes TH3 and TH4 can also penetrate through the third insulating layer 118 to expose the drain DE of the thin-film transistor TFT and the connection electrode CP. Then, please refer to Figure 5 , a conductive layer can be selectively formed, for example, a third conductive layer ML3. A part of the third conductive layer ML3 is formed on the surface of the first flat layer PL1, and another part of the third conductive layer ML3 fills the via holes TH1, TH2, TH3 and TH4. The formed third conductive layer ML3 constitutes the first wire CL1 and the second wire CL2, and the first wire CL1 is electrically connected to the drain DE, and the second wire CL2 is electrically connected to the shared electrode wire CM via the connection electrode CP. After forming the first wire CL1 and the second wire CL2, the preliminary fabrication of the light-emitting device 100 of the present invention is completed. Then, a detection procedure can be performed on the light-emitting device 100 to detect the light-emitting effect of each first light-emitting diode LD1 or whether there is an abnormal condition (such as abnormal light emission) in the first light-emitting diode LD1. When it is found that the light-emitting effect of the first light-emitting diode LD1 in one or more light-emitting units 104 is not as expected or there is an abnormal condition (such as abnormal light emission), a repair process can be performed on the corresponding light-emitting unit 104. The repair process includes setting a second light-emitting diode LD2 in the accommodation holes AH of these light-emitting units 104. Figure 5 Taking the detection that the first light-emitting diode LD1 in the light-emitting unit 104b is defective as an example. According to the present invention, the repair process includes setting a second light-emitting diode LD2 in the accommodation hole AH of the light-emitting unit 104b, and its setting method can be similar to that of the first light-emitting diode LD1. For example, the pre-fabricated second light-emitting diodes LD2 are transferred and adhesively fixed in the accommodation holes AH of the light-emitting units 104 that need to be repaired simultaneously or respectively, for example, using an adhesive layer to fix the second light-emitting diode LD2. Then, a second flat layer PL2 is formed on the substrate 102 to cover the second light-emitting diode LD2 and the first flat layer PL1 and fill the accommodation holes AH of each light-emitting unit 104, wherein the second flat layer PL2 also covers the first flat layer PL1. The second flat layer PL2 can be used as a protective layer.

[0031] The manufacturing method of the light-emitting device of the present invention may further include the step of forming a repair line to electrically connect the second light-emitting diode LD2 and the circuit layer 110 by using the repair line. Please refer to Figure 6 , the step of forming the repair line may include performing a patterning process on the second planar layer PL2, and simultaneously forming vias th1, th2, th3, and th4 in the light-emitting units 104a and 104b. Among them, the vias th1 and th2 extend along the direction Dz in the second planar layer PL2 in the accommodation hole AH. The vias th1 and th2 in the light-emitting unit 104a have approximately the same depth and have a gap SP2 from the bottom surface of the accommodation hole AH, while the vias th1 and th2 in the light-emitting unit 104b expose the first electrode ce1 and the second electrode ce2 of the second light-emitting diode LD2 respectively. When patterning the second planar layer PL2, the first electrode ce1 and the second electrode ce2 can serve as an etch stop layer for etching out the vias th1 and th2. On the other hand, the via th3 exposes a part of the first wire CL1, and the via th4 can extend to the surface of the third insulating layer 118 to expose the connection electrode CP. In some embodiments, the maximum width Wt1 of the vias th1 and th2 is greater than the maximum width Wt2 of the via th3, that is, during the lithography and etching process or the patterning process, it is predetermined that the top size of the vias th1 and th2 is larger than the top size of the via th3. The reason for designing the vias th1 and th2 to have a larger width Wt1 is that their depth is deeper, thereby reducing the aspect ratio and improving the filling effect of the subsequent conductive layer. For example, the maximum width Wt1 of the via th1 is about greater than or equal to 2 micrometers (μm) to less than or equal to 10 micrometers (μm), and the maximum width Wt2 of the via th3 is about greater than or equal to 1 micrometer (μm) to less than or equal to 5 micrometers (μm), but it is not limited thereto. In this embodiment, the size of the via th4 can also be similar to that of the vias th1 and th2, but it is not limited thereto. Next, please refer to Figure 2, a conductive layer is formed, for example, a fourth conductive layer ML4, which is formed on a partial surface of the second flat layer PL2 and fills the vias th1, th2, th3, and th4 to form a first repair line RL1 and a second repair line RL2. The first repair line RL1 can be directly connected to the first conductive line CL1, and the second repair line RL2 can be directly connected to the connection electrode CP adjacent to the accommodation hole AH. In the light-emitting unit 104b, since the second light-emitting diode LD2 is provided, the first repair line RL1 can be directly connected to the first electrode ce1 of the second light-emitting diode LD2 to electrically connect the second light-emitting diode LD2 to the first conductive line CL1, and the second repair line RL2 can be directly connected to the second electrode ce2 of the second light-emitting diode LD2 to electrically connect the second light-emitting diode LD2 to the connection electrode CP and the shared electrode wire CM adjacent to the accommodation hole AH. It should be noted that the extension lengths of the first repair line RL1 and the second repair line RL2 in the accommodation hole AH in the light-emitting unit 104a can be approximately the same and can be greater than the extension lengths of the first repair line RL1 and the second repair line RL2 in the accommodation hole AH in the light-emitting unit 104b. In addition, the manufacturing method of the light-emitting device of the present invention may further include an open process CT to electrically isolate the defective first light-emitting diode LD1 from the circuit layer 110, that is, to electrically isolate at least one of the first electrode CE1 and the second electrode CE2 of the defective first light-emitting diode LD1 from the corresponding thin-film transistor TFT or the shared electrode wire CM. For example, a laser cutting process can be performed to cut the first conductive line CL1 between the first light-emitting diode LD1 and the thin-film transistor TFT in the light-emitting unit 104b to form an open circuit. Alternatively, a laser cutting process can also be performed to cut the second conductive line CL2 to form an open circuit between the second electrode CE2 and the shared electrode wire CM. The open process CT can be performed after the detection process and before forming the second light-emitting diode LD2, can be performed after forming the second light-emitting diode LD2 and before forming the second flat layer PL2, or can be performed before or after forming the repair line.

[0032] The light-emitting device and its manufacturing method of the present invention are not limited to the above embodiments. Other embodiments or variations of the present invention will be further disclosed below. To simplify the description and highlight the differences between the embodiments or variations, the same reference numerals are used to label the same elements in the following text, and the repeated parts will not be described again. In addition, the material, thickness, and process step conditions of each film layer in the subsequent embodiments of the present invention can refer to the first embodiment, so they will not be described again.

[0033] Please refer to Figure 8 , Figure 8 is a partial cross-sectional schematic diagram of the first variant embodiment of the first embodiment of the light-emitting device of the present invention, where Figure 8The light emitting units 104a and 104b correspond to Figure 1 The light emitting unit 104a and the light emitting unit 104b are indicated by the section line AA' and the section line BB', Figure 9 , Figure 10 and Figure 15 There are similar correspondences, which will not be repeated here. In this variant embodiment, the first repair line RL1 and the second repair line RL2 can be composed of the third conductive layer ML3, that is, composed of the same conductive layer as the first wire CL1 and the second wire CL2. The first repair line RL1 and the second repair line RL2 can extend from the surface of the first flat layer PL1 along the side wall of the receiving hole AH to the bottom surface AHa of the receiving hole AH. Furthermore, the second light-emitting diode LD2 of this variant embodiment is a flip-chip light-emitting diode, and its first electrode ce1 and second electrode ce2 are both located on the lower surface of the second light-emitting diode LD2. When the second light-emitting diode LD2 is disposed in the receiving hole AH, the first electrode ce1 and the second electrode ce2 of the second light-emitting diode LD2 can directly contact the first repair line RL1 and the second repair line RL2 thereunder and be electrically connected to each other. Figure 8 The second flat layer PL2 shown covers the first repair line RL1 and the second repair line RL2, and this variation embodiment may not have Figure 2 The protective layer 120 is shown. This variation embodiment can perform an open circuit process CT on the first light emitting element LD1 with defects or damage, for example, by cutting off the first conductive line CL1 in the light emitting unit 104b with a laser process, so that the first light emitting element LD1 is electrically isolated from the thin film transistor TFT. Other embodiments of the present invention can perform similar open circuit processes CT or electrical insulation processes on the damaged ones, which will not be described in detail.

[0034] Please refer to Figure 9 , Figure 9A partial cross-sectional schematic diagram of a second variant embodiment of the first embodiment of the light-emitting device of the present invention. In this variant embodiment, the second light-emitting diode LD2 is a vertical type light-emitting diode, and its first electrode ce1 and second electrode ce2 are respectively located on the lower side and the upper side of the second light-emitting diode LD2. The first repair line RL1 can be formed by the third conductive layer ML3, extending from the upper surface of the first flat layer PL1 along the side wall of the accommodation hole AH to the bottom surface AHa of the accommodation hole AH. The second repair line RL2 can include a first portion RL21 and a second portion RL22, wherein the second portion RL22 can be formed by the third conductive layer ML3, and is electrically connected to the shared electrode wire CM through the perforation th4 penetrating through the first flat layer PL1, the pixel definition layer 106, and the third insulating layer 118; the first portion RL21 of the second repair line RL2 can be formed by another conductive layer, for example, formed by the fourth conductive layer ML4, which is located above the second flat layer PL2 and covers and contacts the second electrode ce2 of the second light-emitting diode LD2, and the first portion RL21 can also be connected to the second portion RL22 through the perforation th4'. As can be seen from the above, the second repair line RL2 and the first repair line RL1 can be formed by not completely the same conductive layers. For example, the first repair line RL1 is formed by one conductive layer, and the second repair line RL2 is formed by two conductive layers, but this is not a limitation. In this variant embodiment, a protective layer 120 can be provided on the second flat layer PL2 and the fourth conductive layer ML4.

[0035] Please refer to Figure 10 , Figure 10 A partial cross-sectional schematic diagram of a third variant embodiment of the first embodiment of the light-emitting device of the present invention. Compared with Figure 8 the first variant embodiment shown, in this variant embodiment, both the first light-emitting diode LD1 and the second light-emitting diode LD2 are flip-chip type light-emitting diodes, and the first electrode CE1 and the second electrode CE2 of the first light-emitting diode LD1 both face the substrate 102 and contact and are electrically connected to the first wire CL1 and the second wire CL2 below it. Similarly, the first electrode ce1 and the second electrode ce2 of the second light-emitting diode LD2 face the substrate 102 and contact and are electrically connected to the first repair line RL1 and the second repair line RL2 below it. The first wire CL1, the second wire CL2, the first repair line RL1, and the second repair line RL2 in this variant embodiment can be formed by the same conductive layer, for example, the third conductive layer ML3, where the third conductive layer ML3 can be located between the pixel definition layer 106 and the circuit layer 110, or can also be located between the first flat layer PL1 and the circuit layer 110, but this is not a limitation.

[0036] Please refer to Figure 11 , Figure 11FIG. is a partial cross-sectional schematic diagram of a second embodiment of the light-emitting device according to the present invention. In this embodiment, the light-emitting device 100 may be a passive light-emitting device, and each light-emitting unit 104 may not have a corresponding driving element or switching element (such as a thin-film transistor) in the circuit layer 110. For example, the circuit layer 110 may include a shared electrode wire CM and a signal wire SL. A chip 130 may be disposed on the surface of the substrate 102, and the shared electrode wire CM and the signal wire SL may be electrically connected to the chip 130 respectively. Figure 11 The electrical connection relationship between the shared electrode wire CM, the signal wire SL, and the chip 130 is represented by equivalent circuit lines 122 and 124. When the light-emitting device 100 is in an operating state, the chip 130 may provide the signal (such as a switching signal) required for the operation of the first light-emitting diode LD1, and transmit the signal via the signal wire SL to turn on the first light-emitting diode LD1.

[0037] Please refer to Figure 12 , Figure 12 FIG. is a top view schematic diagram of a third embodiment of the light-emitting device according to the present invention, and Figure 12 a cross-sectional enlarged schematic diagram of one of the light-emitting units is shown below. In this embodiment, when the first light-emitting diode LD1 in a light-emitting unit 104 emits light abnormally or is defective, two second light-emitting diodes LD2 and LD2' may be disposed in the same accommodation hole AH. The first repair wire RL is electrically connected to the first electrode ce1 of the second light-emitting diode LD2 and the drain DE of the thin-film transistor TFT via vias th1 and th3. The first repair wire RL' is electrically connected to the first electrode ce1' of the second light-emitting diode LD2' via via th1', and the first electrode ce1' is electrically connected to the connection wire CN via vias th31', th32', and th33', where the connection wire CN is electrically connected to the drain DE of the thin-film transistor TFT. Figure 12The electrical connection relationship between the two is represented by the equivalent circuit line 126. The connection wire CN may include the semiconductor layer SC, but is not limited thereto. In some embodiments, the connection wire CN may be composed of the first conductive layer ML1. Furthermore, the second light-emitting diode LD2 and the second light-emitting diode LD2' may share the second wire RL2 and be electrically connected to the shared electrode wire CM. The second wire RL2 electrically connects the second electrode ce2 of the second light-emitting diode LD2 to the shared electrode wire CM via the vias th2 and th4, and electrically connects the second electrode ce2' of the second light-emitting diode LD2' to the shared electrode wire CM via the vias th2' and th4. The via th4 may penetrate the second flat layer PL2. In this embodiment, an accommodation hole AH may accommodate two second light-emitting diodes LD2 and LD2'. The sizes of the second light-emitting diodes LD2 and LD2' may be the same as or different from that of the first light-emitting diode LD1. The two second light-emitting diodes LD2 and LD2' can provide the same or different repair functions, and can also reduce the probability that both of the two second light-emitting diodes LD2 and LD2' are defective and cannot be successfully repaired. The size of the accommodation hole AH in this embodiment is larger than that of the accommodation hole AH in the previous embodiment, and Figure 12 the illustrated accommodation hole AH may be formed by the pixel definition layer 106 and the first flat layer PL1, that is, the side wall of the accommodation hole AH includes a part of the pixel definition layer 106 and a part of the first flat layer PL1, but is not limited thereto. In some embodiments, the accommodation hole AH may still be formed by the first flat layer PL1, that is, the pixel definition layer 106 is not exposed, and the first flat layer PL1 covers the side wall of the opening 1061 of the pixel definition layer 106. Similar to the previous embodiment, an open circuit process CT can be performed in this embodiment to cut off the electrical connection between the first light-emitting diode LD1 and the thin-film transistor TFT. In some embodiments, when one of the second light-emitting diodes LD2 or LD2' can achieve the repair purpose, one of the second light-emitting diodes LD2 and LD2' can also be electrically insulated from the thin-film transistor TFT, but is not limited thereto.

[0038] Please refer to Figure 13 , Figure 13 which is a top view schematic diagram of the fourth embodiment of the light-emitting device of the present invention, and Figure 13 a cross-sectional enlarged schematic diagram of one of the light-emitting units is shown below. The difference between this embodiment and the third embodiment is Figure 13The light-emitting unit 104 includes two receiving holes AH1 and AH2. When the first light-emitting diode LD1 of the light-emitting unit 104 is defective, the second light-emitting diode LD2 and the second light-emitting diode LD2' can be respectively disposed in the receiving holes AH1 and AH2. The second light-emitting diode LD2 and the second light-emitting diode LD2' can share the second repair line RL2, where the second repair line RL2 can be electrically connected to the shared electrode wire CM through the via hole th4. Figure 13 The via hole th4 in it can penetrate through the first planarization layer PL1. The electrical connection manners of the second light-emitting diode LD2 and the second light-emitting diode LD2' with other components are similar to those in the third embodiment and will not be described in detail.

[0039] Please refer to Figure 14 , Figure 14 FIG. is a partial cross-sectional top view schematic diagram of the fifth embodiment of the light-emitting device and manufacturing method of the present invention. In the light-emitting unit 104 of the light-emitting device 100 in this embodiment, the receiving hole AH can have a relatively large size, and the receiving hole AH can be composed of a part of the pixel defining layer 106, a part of the first planarization layer PL1, and a part of the second planarization layer PL2. In the manufacturing process of the light-emitting device 100, if it is detected that the first light-emitting diode LD1 of the light-emitting unit 104b is defective, the second light-emitting diode LD2 can be disposed in the receiving hole AH, and an open-circuit process CT is performed on the first light-emitting diode LD1. Then, the detection step can be performed again to test the light-emitting effect of the second light-emitting diode LD2. If an abnormal condition occurs in the second light-emitting diode LD2, another second light-emitting diode LD2' (or can be called the third light-emitting diode) can be disposed in the receiving hole AH, and the open-circuit process CT' is performed again to electrically insulate the second light-emitting diode LD2 from the thin-film transistor TFT or the shared electrode wire CM. After manufacturing the second light-emitting diode LD2', a third planarization layer PL3 can be formed on the substrate 102 to cover the second light-emitting diode LD2'. Then, a conductive layer, such as the fifth conductive layer ML5, is formed on the third planarization layer PL3, so that a part of the fifth conductive layer ML5 fills in the via holes th1' and th3' to form the first repair line RL1', and a part of the fifth conductive layer ML5 fills in the via holes th2' and th4' to form the second repair line RL2'. The light-emitting device 100 can also selectively include a protective layer disposed to cover the fifth conductive layer ML5 and the third planarization layer PL3 to provide the function of protecting the light-emitting diode.

[0040] Please refer to Figures 15 to 16 , Figures 15 to 16 FIG. is a process schematic diagram of the sixth embodiment of the light-emitting device and manufacturing method of the present invention. Please refer to Figure 15, compared with the first embodiment, in this embodiment, the light-emitting device 100 uses an encapsulation layer PTL to replace the second flat layer PL2. The encapsulation layer PTL can be formed at the accommodation hole AH by dispensing, so the encapsulation layer PTL may not cover the first light-emitting diode LD1. The manufacturing method of the light-emitting device 100 in this embodiment is to perform an inspection process after manufacturing the first light-emitting diode PD1, the first wire CL1, and the second wire CL2. For example, it is found that the first light-emitting diode LD1 of the light-emitting unit 104b has an abnormal phenomenon, while the first light-emitting diode LD1 of the light-emitting unit 104a has no abnormal phenomenon. Then, a second light-emitting diode LD2 is disposed in the accommodation hole AH of the light-emitting unit 104b, and then the encapsulation layer PTL is formed. The manufacturing method of this embodiment is to perform a repair process on the abnormal light-emitting unit 104b to manufacture repair lines. For example, perforations th1, th2, th3, and th4 are formed in the encapsulation layer PTL of the light-emitting unit 104b by laser or etching, and then conductive paste can be dispensed (schematically shown by the nozzle 134 in the figure) into the perforations th1, th2, th3, and th4 to form a first repair line RL1 and a second repair line RL2, as Figure 16 shown. The conductive paste 132 can be, for example, silver paste. According to this embodiment, the first repair line RL1 and the second repair line RL2 are not formed at the accommodation hole AH of the light-emitting unit 104a without abnormality, and there are no perforations either, but this is not limiting.

[0041] Please refer to Figures 17 to 18 , Figure 17 is a top view schematic diagram of the seventh embodiment of the light-emitting device of the present invention, Figure 18 and Figure 17 is a cross-sectional schematic diagram of the light-emitting device shown along the section line C-C'. The light-emitting device 100 in this embodiment uses the fourth conductive layer ML4 to manufacture a shared electrode wire CML. The shared electrode wire CML can be located between adjacent light-emitting units 104 and extends in one direction (for example, the direction Dy) to connect to the chip 130. Taking the adjacent light-emitting units 1041 and 1042 as an example, the second repair line RL2 therebetween can be directly connected to the shared electrode wire CML between them respectively. The chip 130 can provide a shared electrode signal via the shared electrode wire CML. In Figure 18Among them, a part of the shared electrode wire CML can be electrically connected to the shared electrode CME via the via hole th4, but it is not limited thereto. In some embodiments, the light-emitting device 100 can have a touch or sensing function, and can use the shared electrode wire CML and / or the shared electrode wire CM to give a shared signal and a touch or sensing signal according to different time sequences. For example, in the display operation time sequence, the shared electrode wire CML and / or the shared electrode wire CM will comprehensively provide a continuous shared signal to the second electrode CE2 of the first light-emitting diode LD1, and in the touch or sensing operation time sequence, the chip 130 can give different time sequences of touch signals or sensing signals to the shared electrode wire CML and / or the shared electrode wire CM in different regions to control the on and off of the touch or sensing units in each region. For example, a touch signal with a frequency above 60 Hertz (Hz) is provided. In this design, the functions of display and touch or sensing can be achieved by using the shared electrode wire CML and / or the shared electrode wire CM.

[0042] The light-emitting device provided by the present invention may include more than one light-emitting unit, and the light-emitting unit has a first light-emitting diode and a receiving hole, and the receiving hole is used to reserve a space for setting a second light-emitting diode for repair. When, in some embodiments, the repair lines can be made in each light-emitting unit at one time by the production method of a circuit array (array), so although the second light-emitting diode is not set in the receiving hole of some light-emitting units, there will still be repair lines near the receiving hole. Forming the second light-emitting diode and the repair lines by the manufacturing method of the light-emitting device of the present invention can maintain a certain process efficiency or improve the process efficiency while improving the qualification rate. In some embodiments, the repair lines can be made separately for the abnormal light-emitting units by dotting glue. In this case, only some of the light-emitting units may have repair lines. Generally speaking, according to the spirit of the present invention, each light-emitting unit of the light-emitting device can include both the first light-emitting diode and the receiving hole to reserve a repair space, but only a small part of the receiving holes may be provided with the second light-emitting diode. For example, the number of the second light-emitting diodes may be less than or much less than the number of the first light-emitting diodes. Furthermore, the receiving holes in the light-emitting units can be filled with a planarization layer or a packaging material to make the display device have a flatter surface, which is beneficial to the subsequent process.

[0043] Without violating the inventive spirit of the present invention or without conflict, the features, structures, and method steps in the foregoing embodiments and variant embodiments can be arbitrarily mixed and used.

[0044] The above are only the embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A light-emitting device, characterized in that, Comprising: A substrate; A thin-film transistor disposed on the substrate, wherein the thin-film transistor includes an electrode; A light-emitting diode element disposed on the thin-film transistor and electrically connected to the thin-film transistor; A pixel definition layer disposed on the thin-film transistor, the pixel definition layer including an opening, and the light-emitting diode element being disposed in the opening; And A first conductive layer, the first conductive layer including: The electrode of the thin-film transistor; And A shared electrode wire electrically connecting the light-emitting diode element and a shared voltage source.

2. The light-emitting device according to claim 1, characterized in that, The light-emitting diode element includes a first electrode and a second electrode, the first electrode being electrically connected to the thin-film transistor, and the second electrode being electrically connected to the shared voltage source.

3. The light-emitting device according to claim 2, characterized in that, The light-emitting diode element further includes a diode layer disposed between the first electrode and the second electrode.

4. The light-emitting device according to claim 3, characterized in that, The first electrode and the second electrode are disposed on the same side of the diode layer.

5. The light-emitting device according to claim 3, wherein The first electrode and the second electrode are disposed on different sides of the diode layer.

6. The light-emitting device according to claim 1, wherein The electrode of the thin-film transistor is a gate.

7. The light-emitting device according to claim 1, characterized in that, The electrode of the thin-film transistor is a drain.

8. The light-emitting device according to claim 1, characterized in that, The light-emitting device further includes a light conversion material layer at least partially overlapping the light-emitting diode element.

9. The light-emitting device according to claim 1, wherein The light-emitting device further includes a second conductive layer, the first conductive layer being disposed between the substrate and the second conductive layer, and at least a part of the second conductive layer being electrically connected to the shared voltage source.

10. The light emitting device according to claim 1, characterized in that, The light-emitting device further includes a third conductive layer, the third conductive layer being disposed between the substrate and the first conductive layer, and at least a part of the third conductive layer being electrically connected to the shared voltage source.

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