Vapor supply for substrate processing system

Abstract

A vapor supply system for supplying vapor to a processing module of a substrate processing tool includes a vaporizer assembly to vaporize a liquid and supply the vaporized liquid as vapor to the processing module. The vaporizer assembly is external to the substrate processing tool. The vapor supply system includes a gas tank to receive vapor supplied by the vaporizer assembly and to supply the vapor from the gas tank to the processing module. The gas tank encloses a plurality of valves and corresponding mass flow controllers to selectively supply vapor from the vaporizer assembly and at least one process gas from the gas source to the processing module. The gas tank is mounted on or within a substrate processing tool.

Description

Cross - Reference to Related Applications

[0001] This application claims priority to U.S. Provisional Application No. 63 / 429,103, filed on November 30, 2022. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to gas delivery systems for substrate processing systems, and more particularly to vapor supply sources for substrate processing systems. Background Art

[0003] The background description provided herein is for the purpose of generally presenting the background of the disclosure. The work of the currently named inventors within the scope of the background art described herein and aspects of the specification that were not determined to be prior art at the time of filing the application are neither expressly nor impliedly admitted to be prior art to the present disclosure.

[0004] Substrate processing systems for performing deposition and / or etching typically include a processing chamber having a susceptor. A substrate, such as a semiconductor wafer, can be disposed on the susceptor during processing. A process gas mixture containing one or more precursors can be introduced into the processing chamber to deposit a film on the substrate or etch the substrate. In some substrate processing systems, radio frequency (RF) plasma can be excited in the processing chamber and / or an RF bias on the susceptor can be used to initiate a chemical reaction.

[0005] Numerous gas flow paths in the gas delivery system are used to deliver process gases, carrier gases, oxidation gases, precursor gases, and / or purge gases to the processing chamber. The gas flow paths are defined by plumbing, valves, manifolds, and gas flow channels in a valve inlet block. In some instances, one or more liquids are vaporized and supplied as vapor to the processing chamber. Summary of the Invention

[0006] A vapor supply system for supplying vapor to a processing module of a substrate processing tool includes a vaporizer assembly to vaporize a liquid and supply the vaporized liquid as vapor to the processing module. The vaporizer assembly is located outside the substrate processing tool. The vapor supply system includes a gas box to receive the vapor supplied by the vaporizer assembly and supply the vapor from the gas box to the processing module. The gas box surrounds a plurality of valves and corresponding mass flow controllers to selectively supply the vapor from the vaporizer assembly and at least one process gas from a gas source to the processing module. The gas box is mounted on or within the substrate processing tool.

[0007] Among other features, the vaporizer assembly is located in a facility supply cabinet external to the substrate processing tool. The vaporizer assembly is located beneath the floor of the facility housing the substrate processing tool. The vapor supply system also includes a bulk liquid source to supply liquid to the vaporizer assembly. The vapor supply system also includes a first valve connected between the vaporizer assembly and the gas box. The first valve selectively supplies vapor from the vaporizer assembly to the gas box. The first valve is located in the gas box. The vapor supply system also includes a filter connected between the gas box and the processing module to filter contaminants from the vapor supplied to the processing module. The vapor supply system also includes a second valve located within the gas box. The second valve selectively diverts vapor from the gas box to a vacuum diversion path.

[0008] Among other features, the vapor supply system also includes an external disconnect panel for the substrate processing tool. The vapor supply line from the vaporizer assembly is removably connected to the substrate processing tool at the external disconnect panel. The vapor supply system also includes a vapor supply interface that includes a disconnect panel disposed within the substrate processing tool between the vapor supply assembly and the gas box. The vapor is maintained in vapor form for the entire supply path from the vaporizer assembly to the processing module. The vapor supply system also includes a heater to heat the supply line that supplies vapor from the vaporizer assembly to the gas box. The vaporizer assembly supplies vaporized alkylsilane to the gas box. The vaporized alkylsilane is vaporized tetramethylsilane. The vapor supply system also includes a bulk liquid source to supply liquid to the vaporizer assembly. The bulk liquid source includes liquid alkylsilane. The liquid alkylsilane is liquid tetramethylsilane.

[0009] The substrate processing system includes a substrate processing tool that includes a plurality of processing modules, each processing module for processing a semiconductor substrate; and a gas box for selectively supplying gas to a corresponding one of the plurality of processing modules, receiving vaporized alkylsilane from a remote location external to the substrate processing tool, and supplying the vaporized alkylsilane to a first processing module of the plurality of processing modules independently of the gas. The substrate processing system also includes a vaporizer assembly external to the substrate processing tool to store or receive liquid alkylsilane, vaporize the liquid alkylsilane to form vaporized alkylsilane, and supply the liquid alkylsilane from a remote location external to the substrate processing tool to the gas box.

[0010] Among other features, the liquid alkylsilane is liquid tetramethylsilane and the vaporized alkylsilane is vaporized tetramethylsilane. The vaporizer assembly is located in a facility supply cabinet. The substrate processing system also includes a bulk liquid source to supply liquid to the vaporizer assembly. The vaporized alkylsilane is maintained in vapor form for the entire supply path from the vaporizer assembly external to the substrate processing tool to the first processing module. At least a portion of the supply line in the supply path is heated.

[0011] A substrate processing tool includes a plurality of processing modules, each processing module for processing a semiconductor substrate; and a gas box for selectively supplying a gas to a corresponding one of the plurality of processing modules, receiving vaporized alkylsilane from a vaporizer assembly at a remote location external to the substrate processing tool, and supplying the vaporized alkylsilane to a first processing module of the plurality of processing modules independently of the gas. The substrate processing tool and the gas box receive the vaporized alkylsilane in the form of vapor from a vaporizer assembly external to the substrate processing tool. In other features, the vaporized alkylsilane is vaporized tetramethylsilane.

[0012] A system for supplying vaporized precursors to a processing module of a substrate processing tool includes a first vaporizer assembly, a second vaporizer assembly, and a gas box. The first vaporizer assembly is configured to vaporize a first liquid precursor and supply the first vaporized precursor via a first conduit. The second vaporizer assembly is configured to vaporize a second liquid precursor and supply the second vaporized precursor via a second conduit. The gas box is configured to mix the first vaporized precursor with the second vaporized precursor, supply the mixture of the first vaporized precursor and the second vaporized precursor to the processing module, and at least partially evacuate the mixture from the gas box after a process step is completed to prevent condensation of at least one of the first vaporized precursor and the second vaporized precursor in the gas box.

[0013] In other features, the gas box is further configured to establish a steady flow of the mixture of the first vaporized precursor and the second vaporized precursor before supplying the mixture to the processing module. At least one of the first conduit and the second conduit is heated to supply the first vaporized precursor and the second vaporized precursor in the form of vapor to the gas box. The gas box is connected to an exhaust system to evacuate the mixture. The gas box is further configured to receive a gas from a gas source and add the gas to at least one of the first vaporized precursor and the second vaporized precursor before mixing the first vaporized precursor with the second vaporized precursor.

[0014] Among other features, the gas box includes a first inlet valve, a second inlet valve, a first mass flow controller, a second mass flow controller, a first outlet valve, a second outlet valve, a first valve, a second valve, and a third valve. The first inlet valve is configured to receive the first pre-vaporized precursor from the first vaporizer assembly via the first conduit. The second inlet valve is configured to receive the second pre-vaporized precursor from the second vaporizer assembly via the second conduit. The first mass flow controller is connected to the first inlet valve to regulate the flow of the first pre-vaporized precursor. The second mass flow controller is connected to the second inlet valve to regulate the flow of the second pre-vaporized precursor. The first outlet valve is connected to the first mass flow controller. The second outlet valve is connected to the second mass flow controller. The first valve has an input connected to the first outlet valve and the second outlet valve, and has an output connected to the second valve coupled to the processing module. The third valve is connected between the input of the first valve and the outputs of the first outlet valve and the second outlet valve.

[0015] Among other features, the system further includes a controller configured to, before supplying the mixture to the processing module: close the first inlet valve and the second inlet valve, the first outlet valve and the second outlet valve, the first valve and the second valve, and turn off the first mass flow controller and the second mass flow controller; open the third valve and the first outlet valve and the second outlet valve; open the first inlet valve and the second inlet valve to allow the first pre-vaporized precursor and the second pre-vaporized precursor to flow into the gas box via the first conduit and the second conduit; turn on the first mass flow controller and the second mass flow controller to allow the flow of the mixture to reach a steady state; and after the flow of the mixture reaches the steady state, close the third valve and open the first valve and the second valve to supply the mixture to the processing module.

[0016] Among other features, the controller is further configured to, after performing the process step using the mixture in the processing module: open the third valve; close the first inlet valve and the second inlet valve and the first valve and the second valve while keeping the first outlet valve and the second outlet valve open and keeping the first mass flow controller and the second mass flow controller on to empty the mixture from the gas box and prevent at least one of the first pre-vaporized precursor and the second pre-vaporized precursor in the gas box from condensing; close the first inlet valve and the second inlet valve, the first outlet valve and the second outlet valve, the first valve and the second valve; and turn off the first mass flow controller and the second mass flow controller.

[0017] Among other features, the system further includes: a first heater coupled to the first conduit; a second heater coupled to the second conduit; and a controller configured to control the first heater and the second heater to heat the first conduit and the second conduit to a first temperature and a second temperature, respectively, to maintain the first vapor precursor and the second vapor precursor in the first conduit and the second conduit in vapor form.

[0018] Among other features, the system further includes: a first heater coupled to the first vaporizer assembly; a second heater coupled to the second vaporizer assembly; and a controller configured to control the first heater and the second heater to heat the first liquid precursor and the second liquid precursor to a first temperature and a second temperature, respectively, to vaporize the first liquid precursor and the second liquid precursor into the first vapor precursor and the second vapor precursor. The first liquid precursor and the second liquid precursor include molybdenum hexafluoride and tungsten hexafluoride, respectively. The first vaporizer assembly and the second vaporizer assembly are located in a facility supply cabinet external to the substrate processing tool, and wherein the gas box is mounted on or within the substrate processing tool. The first vaporizer assembly and the second vaporizer assembly are located below the floor of the facility including the substrate processing tool, and wherein the gas box is mounted on or within the substrate processing tool.

[0019] A system for supplying a vapor precursor to a processing module of a substrate processing tool includes: a vaporizer assembly configured to vaporize a liquid precursor and supply the vapor precursor via a conduit; and a gas box configured to supply the vapor precursor to the processing module and at least partially evacuate the vapor precursor from the gas box after a process step is completed to prevent condensation of the vapor precursor in the gas box.

[0020] Among other features, the gas box further includes establishing a steady flow of the vapor precursor before supplying the vapor precursor to the processing module. Heating the conduit to supply the vapor precursor in vapor form to the gas box. The gas box is connected to the evacuation system to evacuate the vapor precursor. The gas box is further configured to receive gas from a gas source and add the gas to the vapor precursor.

[0021] Among other features, the gas box includes an inlet valve, a mass flow controller, an outlet valve, a first valve, a second valve, and a third valve. The inlet valve is configured to receive the vapor precursor from the vaporizer assembly via the conduit. The mass flow controller is connected to the inlet valve to regulate the flow of the vapor precursor. The outlet valve is connected to the mass flow controller. The first valve has an input portion connected to an output portion of the outlet valve and has an output portion connected to a second valve coupled to the processing module. The third valve is connected between the input portion of the first valve and the output portion of the outlet valve.

[0022] Among other features, the system further includes a controller configured to, before supplying the vaporized precursor to the processing module: close the inlet valve, the outlet valve, the first valve, and the second valve, and turn off the mass flow controller; open the third valve and the outlet valve; open the inlet valve to allow the vaporized precursor to flow into the gas tank via the conduit; activate the mass flow controller to allow the flow of the vaporized precursor to reach a steady state; and after the flow of the vaporized precursor reaches the steady state, close the third valve and open the first valve and the second valve to supply the vaporized precursor to the processing module.

[0023] Among other features, the controller is further configured to, after performing the process step using the vaporized precursor in the processing module: open the third valve; close the inlet valve and the first valve and the second valve while keeping the outlet valve open and the mass flow controller activated to evacuate the vaporized precursor from the gas tank and prevent condensation of the vaporized precursor in the gas tank; and close the inlet valve, the outlet valve, the first valve, and the second valve, and turn off the mass flow controller.

[0024] Among other features, the system further includes: a heater coupled to the conduit; and a controller configured to control the heater to heat the conduit to maintain the vaporized precursor in the conduit in vapor form. The system further includes: a heater coupled to the vaporizer assembly; and a controller configured to control the heater to heat the liquid precursor to vaporize the liquid precursor into the vaporized precursor.

[0025] Among other features, the gas tank further includes a fourth valve connected to a source of inert gas, the fourth valve being connected between the inlet valve and the mass flow controller to add the inert gas to the vaporized precursor. The liquid precursor includes tetramethylsilane. The system further includes a filter connected between the second valve and the processing module to filter contaminants from the vaporized precursor supplied to the processing module.

[0026] Among other features, the vaporizer assembly is located in a facility supply cabinet external to the substrate processing tool, and the gas tank is mounted on or within the substrate processing tool. The vaporizer assembly is located below the floor of a facility that includes the substrate processing tool, and the gas tank is mounted on or within the substrate processing tool.

[0027] Based on the detailed description, the claims, and the drawings, a further scope of applicability of the present disclosure will become apparent. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Description of the Drawings

[0028] The present disclosure will be more fully understood from the detailed description and the accompanying drawings, in which:

[0029] Figure 1 is a functional block diagram of an example of a substrate processing system in accordance with the present disclosure;

[0030] Figure 2A and 2B is a functional block diagram of a vapor supply system and a substrate processing tool in accordance with the present disclosure;

[0031] Figure 3 shows an exemplary vapor pressure curve of a vaporized liquid for supply to a processing chamber in accordance with the present disclosure;

[0032] Figure 4 shows an exemplary configuration of a vapor supply system and a substrate processing tool in accordance with the present disclosure; and

[0033] Figure 5 is a flow chart of a method for supplying one or more vaporized precursors to a processing chamber in accordance with the present disclosure.

[0034] In the drawings, reference numerals may be reused to identify like and / or identical elements. DETAILED DESCRIPTION

[0035] The gas delivery system includes a configuration of tubing, valves, manifolds, and gas flow channels to supply a gas mixture to a corresponding processing chamber or station of a substrate processing tool in a substrate processing system (e.g., a substrate processing system configured to perform deposition processes including, but not limited to, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), and thermal atomic layer deposition (ALD)). The gas delivery system may also be configured to supply vapor to the processing chamber. In some processes, the gas delivery system supplies vaporized alkylsilane, such as vaporized tetramethylsilane (4MS).

[0036] In some examples, the gas delivery system includes a vaporizer and a liquid flow controller configured to flow a vaporized liquid (e.g., a precursor) such as 4MS. The vaporizer may have a fast response time (e.g., between 0.5 and 5 seconds to ramp up to full output). In other examples, an ampoule is used to heat the liquid to form vapor in a tank. A carrier gas may flow into the ampoule to entrain the vapor. A mass flow controller (MFC) is used to supply the carrier gas from the ampoule to the processing chamber. When a carrier gas is used, a mass flow meter (MFM) is used on the processing module to measure the total amount of the vapor / gas mixture when the vapor / gas mixture reaches the processing module.

[0037] The vapor supply system and method according to the present disclosure are configured to vaporize a liquid precursor in a remote location (i.e., away from the substrate processing tool) and supply the vaporized liquid from the remote location to the substrate processing system. In one example, the remote location corresponds to a facility supply cabinet. In some examples, one or more components of the vapor supply system are located beneath the floor of the equipment containing the substrate processing system (e.g., beneath the substrate processing tool).

[0038] For example, the liquid can be stored in a bulk liquid source or container in the facility supply cabinet. The liquid is supplied to a heated vaporizer assembly to convert the liquid into vapor. The vapor is supplied to the substrate processing tool due to the pressure differential between the vaporizer assembly and the corresponding processing chamber. A mass flow controller (e.g., a mass flow controller located within the gas box of the substrate processing tool) can be used to control the supply of the vapor into the processing chamber.

[0039] Furthermore, in some applications, two vaporized precursors (e.g., molybdenum hexafluoride MoF6 and tungsten hexafluoride WF6) can be supplied from corresponding vaporizer assemblies. The vaporized precursors can be combined in the gas box, and the mixture of the vaporized precursors can be supplied to the processing chamber. The vaporizer assemblies can be located in a facility supply cabinet away from the substrate processing tool. For example, two vaporizer assemblies can be used to vaporize two liquid precursors (e.g., MoF6 and WF6) respectively. The vaporized precursors are then supplied from the corresponding vaporizer assemblies to the gas box located at or within the substrate processing tool via separate heated conduits. The vaporized precursors are combined in the gas box, and the mixture of the vaporized precursors is supplied to the processing chamber.

[0040] To prevent condensation of the vaporized precursors upstream of the processing chamber, typically and especially in the gas box, the conduits that supply the vaporized precursors from the vaporizer assemblies to the gas box are heated. Heating the conduits ensures that the vaporized precursors enter the gas box in vapor form and that no condensation occurs in the supply conduits. Additionally, the valves in the gas box for supplying the vaporized precursors to the processing chamber and for diverting the vaporized precursors to the foreline (venting system) of the substrate processing tool are controlled. The valves between the vaporizer assembly and the processing chamber are controlled such that the flow of the vaporized precursors reaches a steady state before the vaporized precursors are supplied to the processing chamber. After the vaporized precursors reach a steady state and after a process step is performed in the processing chamber using the vaporized precursors, the valves are controlled to evacuate the vaporized precursors from the gas box (e.g., from upstream of the processing chamber and the conduits and valves in the gas box) to prevent condensation of the vaporized precursors in the gas box and upstream of the processing chamber. The above and other features of the present disclosure are described in detail below.

[0041] Now refer to Figure 1, the exemplary substrate processing system 100 includes a processing chamber 112 having a reaction volume. In some examples, the substrate processing system 100 is configured to perform a plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD) process. A process gas mixture can be supplied to the processing chamber 112 using a gas distribution device 114 such as a showerhead. In some examples, the showerhead is a pendant-type showerhead. A substrate 118 such as a semiconductor wafer can be disposed on a substrate support 116 during processing. The substrate support 116 can include a pedestal, an electrostatic chuck, a mechanical chuck, or other types of substrate supports.

[0042] One or more gas delivery systems (GDSs) 120-1, 120-2, and 120-3 can each include one or more gas sources 122-1, 122-2, …, and 122-N (collectively referred to as gas sources 122), where N is an integer greater than 1. Valves 124-1, 124-2, …, and 124-N (collectively referred to as valves 124), mass flow controllers 126-1, 126-2, …, and 126-N (collectively referred to as mass flow controllers 126), or other flow control devices can be used to supply one or more gases to a manifold 130, which supplies the gas mixture to the processing chamber 112 via a valve inlet block 132. The valve inlet block 132 includes a plurality of valves and defines corresponding flow paths for the gas mixture supplied to the processing chamber 112. The valve inlet block 132 can include one or more diversion paths for selectively diverting the gas to a vacuum or exhaust device. One or more additional gas delivery systems can be provided to supply gases or gas mixtures at other locations.

[0043] The controller 136 can be used to monitor process parameters such as temperature, pressure, etc. (using one or more sensors 140), and can be used to control the process timing. The controller 136 can be used to control process equipment such as the gas delivery systems 120-1, 120-2, and 120-3, the substrate support heater 142, and / or the RF plasma generator 146. The controller 136 can also be used to evacuate the processing chamber 112 using valves 150 and pumps 152.

[0044] The RF plasma generator 146 generates an RF plasma in the processing chamber. The RF plasma generator 146 can be an inductive or capacitive RF plasma generator. In some examples, the RF plasma generator 146 can include an RF supply source 160 and a matching network 162. Although the RF plasma generator 146 is shown connected to the gas distribution device 114 and the substrate support is grounded or floating, the RF plasma generator 146 can be connected to the substrate support 116 and the gas distribution device 114 can be grounded or floating.

[0045] Generally, substrate processing system 100 is implemented as a substrate processing tool that includes one or more processing modules, and each of the one or more processing modules can be implemented as a processing chamber 112. Although only one processing chamber 112 is shown, each processing module can include multiple processing chambers or stations. Typically, various components are disposed in and / or on the substrate processing tool. The above components are shown on the tool side 164 of the dashed line 166 in Figure 1 . Conversely, other components are shown on the facility side 168 of the dashed line 166. The components on the facility side 168 are located outside the substrate processing tool, such as in a facility supply cabinet, under the floor, etc.

[0046] The components located on the facility side 168 according to the present disclosure include a vaporizer assembly 170. The vaporizer assembly 170 is configured to supply a vaporized precursor (such as 4MS vapor) to the processing chamber 112 (such as via a gas box of a GDS such as GDS120-3), as described in more detail below. In some embodiments, a carrier gas is supplied from a carrier gas source 174 to the vaporizer assembly 170 (such as via a vaporizer valve block to a tank, not shown in Figure 1 ). A liquid (such as liquid 4MS) is supplied from a bulk liquid source 178 to the vaporizer assembly 170 via a bulk supply valve block 182. In one embodiment, the vaporizer assembly 170 and the bulk liquid source 178 are located in a facility supply cabinet.

[0047] Thus, in the substrate processing system 100 according to the present disclosure and as described in more detail below, the liquid precursor is vaporized at a remote location and then supplied as a vapor from the remote location to the substrate processing chamber 112. As used herein, "remote location" refers to a location outside the substrate processing tool (such as not within a gas delivery system mounted on or adjacent to the substrate processing tool, in a gas box of the substrate processing tool, etc.).

[0048] Figure 2A and 2B The vapor supply system 200 configured to supply vapor from a remote location to the substrate processing tool 202 according to the present disclosure is described in more detail in Figure 2A . As shown, the vapor supply system 200 includes a vaporizer assembly 204 in fluid communication with a bulk supply valve block 208, and the bulk supply valve block 208 is configured to selectively supply a liquid (such as a liquid precursor, such as 4MS) from a facility bulk liquid source 212 to the vaporizer assembly 204. In this example, the vaporizer assembly 204 is configured to vaporize the liquid. Although not shown, in some examples, the vapor supply system 200 includes a carrier gas source configured to supply a carrier gas into the vaporizer assembly 204 to entrain the vapor.

[0049] Although the vaporizer assembly 204 and the bulk liquid source 212 are inFigure 2A shown as separate components, but in some examples, the vaporizer assembly 204 and the body liquid source 212 may be implemented as a single component, such as a vaporizer assembly that includes the body liquid source. For example, as Figure 2B shown, the body liquid source 212 itself is configured as a vaporizer assembly to vaporize the liquid (e.g., using a sheathed heater) and supply the vapor to the substrate processing tool 202. In other words, in this example, a separate external vaporizer assembly such as Figure 2A the vaporizer assembly 204 shown is omitted.

[0050] At least the vaporizer assembly 204 and the body liquid source 212 are located outside the substrate processing tool 202, such as in a facility supply cabinet (e.g., beneath the floor of the facility). As Figure 2A and 2B shown, the components shown on the facility side 216 of the dashed line 224 are located in the facility supply cabinet, beneath the floor 222 of the facility, etc. In one example, the vaporizer assembly 204 is located more than 20 feet (e.g., 100 feet) from the substrate processing tool 202. In contrast, the components shown on the tool side 220 of the dashed line 224 may be located on or within the substrate processing tool 202. In some embodiments, one or more components of the vapor supply system 200 (e.g., the controller 228, the valve inlet block 232, etc.) may be located on the tool side 220.

[0051] As Figure 2A shown, when the vaporizer assembly 204 is heated (e.g., using a heater 236 that responds to a signal received from the controller 228), vapor is formed in the vaporizer assembly 204. The heater 236 may correspond to one or more individually or collectively controlled resistance heaters, jackets, or sheathed heaters (e.g., heater films or layers), etc. In some examples, the heater 236 may include one or more flanged cartridge heaters that extend through the bottom and / or sidewalls of the vaporizer assembly 204 to directly heat the liquid.

[0052] The vaporizer assembly 204 selectively supplies vapor to the valve inlet block 232. For example, to supply vapor, the heater 236 is controlled to heat the liquid within the vaporizer assembly 204, thereby forming vapor. The valves of the vaporizer assembly 204 and the valve inlet block 232 are selectively controlled (e.g., using the controller 228) to allow the vapor to flow out of the vaporizer assembly 204 and into the substrate processing tool 202 via the valve inlet block 232. The controller 228 is also configured to control the body supply valve block 208 to supply additional liquid to the vaporizer assembly.

[0053] The substrate processing tool 202 includes one or more processing modules 240. Each of the processing modules 240 may correspond to a single-station or multi-station processing module having one or more processing stations (e.g., corresponding to a processing chamber such as processing chamber 112). The processing modules 240 receive gases and gas mixtures (e.g., process gases, purge gases, etc.) via a gas box 244 of the substrate processing tool 202. Although only one gas box 244 is shown, the substrate processing tool 202 may include two or more gas boxes.

[0054] The gas box 244 houses components of a gas delivery system (e.g., Figure 1 the gas delivery system 120 shown), as described in more detail below. For example, the gas box 244 houses various valves, couplings, gas supply lines, manifolds, MFCs, etc. configured to supply corresponding gases and gas mixtures to the processing modules 240. The gas box 244 is sealed to prevent gas leakage between the interior of the gas box 244 and the atmosphere.

[0055] According to the present disclosure, the vapor supply system 200 supplies vapor to the processing modules 240 via the gas box 244. For example, a vapor supply line 248 from the vaporizer assembly 204 passes through and is enclosed within the gas box 244. In some examples, the vapor supply line 248 from the vaporizer assembly 204 to the processing modules 240 is heated to prevent the vapor from condensing / turning into a liquid within the vapor supply line 248 before being supplied to the processing modules 240. For example, in response to receiving a control signal from the controller 228, the vapor supply line 248 is heated using a resistive heater, a jacket, or a wrap-around heater, etc. In some examples, the vapor may be supplied to the processing modules 240 at a low enough pressure such that the material remains in vapor form at room temperature (e.g., 17 - 25 degrees Celsius). Thus, it may not be necessary to heat the hardware components upstream of the MFCs within the gas box 244 (e.g., inside or outside the gas box 244). Instead, the supply pressure downstream of the gas box 244 and the MFCs is low enough such that no heating is required to maintain the material in vapor form.

[0056] As an example, the vapor supply line 248 is heated to maintain the temperature of the vapor below Figure 3 the vapor pressure curve 300 shown (e.g., the vapor pressure curve for 4MS). In other words, for a given pressure, the vapor supply line 248 is heated to a temperature below the vapor pressure curve 300. For example, for a pressure of 1000 Torr, the vapor supply line 248 is heated to ensure that the vapor remains at a temperature of at least 45 degrees Celsius. In some examples, the pressure is monitored by the controller 228 (e.g., using one or more pressure sensors 252).

[0057] Figure 4More particularly, an exemplary configuration of the vapor supply system 400 in accordance with the present disclosure is shown. Note that Figure 4 A general configuration is shown that can supply only one vaporized precursor (e.g., 4MS) or a mixture of two vaporized precursors (e.g., MoF6 and WF6). Although elements 472 and 443 (described below) are used when supplying one vaporized precursor (e.g., 4MS), elements 472 and 443 are not used and are omitted when supplying a mixture of two vaporized precursors (e.g., MoF6 and WF6). Thus, elements 472 and 443 are shown by dashed lines, indicating that elements 472 and 443 are present when supplying one vaporized precursor (e.g., 4MS), and elements 472 and 443 are absent when supplying a mixture of two vaporized precursors (e.g., MoF6 and WF6).

[0058] As used herein, a "vapor supply system" may refer to components associated with the storage and supply of vapor both external and internal to a substrate processing tool 406, including a gas box 404 of the substrate processing tool 406). The illustrated vapor supply system 400 is configured to supply two vaporized precursors (e.g., MoF6 and WF6) via two branches. In applications where only one vaporized precursor (e.g., 4MS) is needed, the second branch for supplying the second vaporized precursor (e.g., components 408-2, 448-2, 451-2, 430-2, 432-2, and 460-2) may be omitted. Note that 4MS, MoF6, and WF6 are only used as non-limiting examples of precursors. The principles of the present disclosure may be applied to any other precursor or combination of precursors.

[0059] In Figure 4 In the illustrated vapor supply system 400, vapors containing one or more vaporized precursors or reactants are respectively supplied by one or more vaporizer assemblies 408-1, 408-2. The vapors travel through the gas box 404 to a processing module (e.g., Figure 1 the illustrated processing chamber 112). For example, the vapor supply system 400 includes a first vaporizer assembly 408-1 and a second vaporizer assembly 408-2 (collectively referred to as vaporizer assemblies 408). In applications where a mixture of two vaporized precursors (e.g., MoF6 and WF6) is used to process a substrate 118 ( Figure 1 shown) in the processing chamber 112, the corresponding liquid precursors are heated and vaporized in the corresponding vaporizer assemblies 408-1, 408-2. In applications where only one vaporized precursor (e.g., 4MS) is used, the corresponding liquid precursor is heated and vaporized in the first vaporizer assembly 408-1, and the second vaporizer assembly 408-2 and subsequent elements connected to the second vaporizer assembly 408-2 are omitted.

[0060] For example, the vaporizer assemblies 408 are similar to Figure 2A and 2BThe vaporizer assembly 204 and / or the bulk liquid source 212 shown. Depending on the precursor used, the vaporizer assembly 408 can heat the corresponding liquid precursor to different temperatures to produce the corresponding vaporized precursor. The vaporizer assembly 408 is located on the facility side 412, such as in the facility supply cabinet, under the floor of the manufacturing facility, etc. In contrast, the gas box 404 is located on the tool side 416. As Figure 4 shown, the components shown on the tool side 416 can be located inside the substrate processing tool 406, mounted on the substrate processing tool 406, etc. For the sake of brevity, Figure 4 some components of the vapor supply system 400 are omitted (shown in more detail in Figure 2A and 2B ).

[0061] The first vaporizer assembly 408-1 is connected to the gas box 404 via a first vapor supply line (also referred to as a first conduit) 448-1. The first vaporizer assembly 408-1 vaporizes the first liquid precursor and supplies the first vaporized precursor to the first input of the gas box 404 via the first conduit 448-1. For example, in an application using only one precursor (e.g., 4MS), the first vaporizer assembly 408-1 supplies the precursor in vapor form. In an application using two precursors (e.g., MoF6 and WF6), the first vaporizer assembly 408-1 supplies the first vaporized precursor (e.g., MoF6). The first heater 451-1 is disposed around the first conduit 448-1 from the output of the first vaporizer assembly 408-1 to the first input of the gas box 404. The first heater 451-1 is controlled by a controller (e.g., Figure 1 , 2A , the controllers 136, 228 shown in 2B) to maintain the first vaporized precursor in vapor form in the first conduit 448-1 between the output of the first vaporizer assembly 408-1 and the first input of the gas box 404.

[0062] The second vaporizer assembly 408-2 is connected to the gas box 404 via a second vapor supply line (also referred to as a second conduit) 448-2. The second vaporizer assembly 408-2 vaporizes the second liquid precursor and supplies the second vaporized precursor to the second input of the gas box 404 via the second conduit 448-2. For example, in an application using only one precursor (e.g., 4MS), the second vaporizer assembly 408-2 and the subsequent components connected to the second vaporizer assembly 408-2 are omitted. In an application using two precursors (e.g., MoF6 and WF6), the second vaporizer assembly 408-2 supplies the second vaporized precursor (e.g., WF6). The second heater 451-2 is disposed around the second conduit 448-2 from the output of the second vaporizer assembly 408-2 to the second input of the gas box 404. The second heater 451-2 is controlled by a controller (e.g., Figure 1 ,2A ... is controlled by the controllers 136, 228 as shown in FIGS. 2B to maintain the second pre-vaporized precursor in vapor form in the second conduit 448-2 between the output of the second vaporizer assembly 408-2 and the second input of the gas tank 404. Depending on the precursor, the controller can heat the corresponding heaters 451-1, 451-2 to different temperatures to maintain the corresponding pre-vaporized precursor in vapor form in the conduits 448-1, 448-2.

[0063] In addition, when only one pre-vaporized precursor (e.g., 4MS) is supplied, the filter 472 and valve 443 are used as described below. However, when a mixture of two precursors (e.g., MoF6 and WF6) is supplied, the filter and valve 443 are omitted, and the description of the filter and valve 443 only applies when only one pre-vaporized precursor (e.g., 4MS) is supplied. Further, in some examples, when only one pre-vaporized precursor (e.g., 4MS) is supplied, the filter 472 and the valve in series with the filter 472 can be provided in the corresponding vaporizer assembly (e.g., 408-1) to filter contaminants from the pre-vaporized precursor before supplying the pre-vaporized precursor to the corresponding conduit (e.g., 448-1).

[0064] The gas tank 404 includes components such as valves 420, MFC 424, other valves described below, and associated couplings, supply lines, and manifolds (not shown). The gas tank 404 is configured to receive one or more pre-vaporized precursors from the corresponding vaporizer assembly 408 and receive gases and gas mixtures from the corresponding gas source 428. The gas tank 404 is configured to supply the pre-vaporized precursors and gases to the processing module of the substrate processing tool 406. In some embodiments, the gas tank 404 can be mounted below, above, or adjacent to the processing module. The gas is supplied from the corresponding gas source 428 to the gas tank 404, and the gas source 428 can be located in the same or a different equipment cabinet as the vaporizer assembly 408, under the floor, etc. The control valves 420, MFC 424, and other valves (using Figure 1 、 2A 、the controllers 136, 228 as shown in FIGS. 2B) to control the flow of gases and gas mixtures to the processing module, as described in detail below. For example, one or more pre-vaporized precursors and gas mixtures are supplied to the processing module (e.g., Figure 1 the processing chamber 112 as shown in Figure 1 ) via a valve inlet block 132 such as that shown in

[0065] The gas box 404 according to the present disclosure further includes valves 430-1, 430-2 that are configured to receive one or more vaporized precursors supplied by the vaporizer assemblies 408-1, 408-2 via conduits 448-1, 448-2, respectively. Accordingly, the valves 430-1, 430-2 may be referred to as the inlet valves 430 of the gas box 404. The input valves 430-1, 430-2 are connected to mass flow controllers (MFCs) 432-1, 432-2, respectively. The gas box 404 includes additional valves as described below. By controlling the valves as described in more detail below, the gas box 404 supplies the vaporized precursor (in the case of a single precursor such as 4MS) or a mixture of two precursors (e.g., MoF6 and WF6) to the processing module (e.g., via the vapor supply line and / or manifold 436).

[0066] Although the vaporizer assemblies 408 are located relatively far from the substrate processing tool 406 and the gas box 404, for the entire supply path from the vaporizer assemblies 408 via the gas box 404 to the processing module, the precursor (e.g., 4MS) or the mixture of precursors (e.g., MoF6 and WF6) supplied from the gas box 404 to the processing module is in vapor form. More specifically, the precursor remains in vapor form in all of the vapor supply lines (e.g., in conduits 448-1, 448-2, in the gas box 404, and in the manifold 436). In other words, the precursor does not change from liquid to vapor within any of the vapor supply lines (e.g., in conduits 448-1, 448-2, in the gas box 404, and in the manifold 436).

[0067] When only one vaporized precursor (e.g., 4MS) is supplied, another gas or gas mixture (e.g., a purge gas, molecular nitrogen (N2), an inert gas, etc.) is supplied from the gas source 428 via the valve 443 and added to the vaporized precursor (i.e., mixed with the vaporized precursor) in the gas box 404 (e.g., as shown at 440 between the valve 430-1 and the corresponding MFC 432-1). When a mixture of two precursors (e.g., MoF6 and WF6) is supplied, no gas or gas mixture is added to either of the two precursors or to the mixture of the two precursors.

[0068] The gas box 404 is sealed to prevent the vaporized precursor and gas from leaking between the inside of the gas box 404 and the atmosphere. Further, removing the vaporizer assemblies 408 and related components from the tool side 416 increases the available space for other components, simplifies the routing of the supply lines, facilitates maintenance and servicing, etc.

[0069] The external interface (shown as a dashed line) 444 between the facility side 412 and the tool side 416 can correspond to the outer surface of the substrate processing tool 406, such as an external panel, the housing of the substrate processing tool 406, etc. In some examples, the external interface 444 corresponds to an external disconnect panel. The vapor supply lines 448-1, 448-2 from the vaporizer assembly 408 (and in some examples, the supply lines from the gas source 428) are connected to the external interface 444 using corresponding connectors or disconnects. In other words, the vapor supply lines 448-1, 448-2 can be detachably connected to the substrate processing tool 406 at the external interface 444 and disconnected from the substrate processing tool 406.

[0070] In some examples, the vaporized precursors supplied from the vaporizer assembly 408 are received and distributed by a vapor supply manifold or assembly 452. In some examples, a vapor supply interface (shown as a dashed line) 456 is provided between the vapor supply assembly 452 and the gas box 404. For example, the vapor supply interface 456 corresponds to a disconnect panel. Thus, the vapor supply lines within the substrate processing tool 406 can be connected to the vapor supply assembly 452 at the vapor supply interface 456 and disconnected from the vapor supply assembly 452.

[0071] The gas box 404 further includes valves 460-1, 460-2 respectively coupled to the MFCs 432-1, 432-2. The output of the valve 460-2 is connected to the output of the valve 460-1 as shown at 441. When two precursors are used, the two precursors are mixed (combined) downstream of the valves 460-1, 460-2. The valves 460-1, 460-2 can be referred to as the outlet valves 460 of the gas box 404.

[0072] The gas box 404 also includes a valve 465. The input of the valve 465 is connected to the outputs of the valves 460-1, 460-2. The output of the valve 465 is connected to the vapor supply line and / or manifold 436. The valve 465 supplies a single vaporized precursor (such as 4MS) (e.g., output from the outlet valve 460-1) or a mixture of a first precursor and a second precursor (such as MoF6 and WF6) (e.g., output from the combined output of the outlet valves 460-1, 460-2) from the gas box 404 to the processing module via the vapor supply line and / or manifold 436. Thus, the valve 465 in the gas box 404 can be referred to as the chamber valve 465, and the vaporized precursor is supplied to the processing module via this chamber valve 465 (such as Figure 1 the processing chamber 112 shown).

[0073] The gas box 404 also includes a valve 464 that is coupled between the junction of the outputs of valves 460-1, 460-2 (or the output of valve 460-1 in an application where a single precursor such as 4MS is supplied) and the input of valve 465, and a vacuum diversion path that is connected to the foreline (exhaust system) of the substrate processing tool 406. Specifically, the input of valve 464 is connected to the outputs of valves 460-1, 460-2 (or the output of the outlet valve 460-1 when a single precursor such as 4MS is supplied), and is connected to the input of valve 465. The output of valve 464 is connected to the foreline (exhaust system) of the substrate processing tool 406. Thus, the input of valve 464 is connected to a position downstream of the outputs of valves 460-1, 460-2 and upstream of the input of valve 465. Valve 464 can be referred to as a diversion valve because valve 464 is used to divert the vaporized precursor to the foreline.

[0074] A valve 466 outside the gas box 404 is connected to the output of valve 465. The output of valve 465 is connected to the input of a filter 472. The filter 472 is only used when only one precursor (such as 4MS) is supplied. When a mixture of two precursors (such as MoF6 and WF6) is supplied, the filter 472 is not used. Instead, when a mixture of two precursors (such as MoF6 and WF6) is supplied, the output of valve 465 is directly connected to a valve 466 outside the gas box 404 that is between the gas box 404 and the processing module. When only one precursor (such as 4MS) is supplied, the output of the filter 472 is connected to the processing module (such as Figure 1 the valve inlet block of the processing chamber 112 shown) via valve 466. In other words, regardless of whether the filter 472 is used, valve 466 is downstream of valve 465 and upstream of the processing module. The filter 472 is configured to filter particles from the vaporized precursor supplied from the gas box 404. The filter 472 prevents particulate contaminants from being introduced into the processing module.

[0075] When a single precursor such as 4MS is used, elements 408-2, element 451-2, valve 430-2, MFC432-2, and valve 460-2 are omitted. The vaporized precursor (such as 4MS) is vaporized in the first vaporizer assembly 408-1, and the first vaporized precursor is supplied to the processing module (such as Figure 1 the processing chamber 112 shown) via the heated conduit 448-1, valve 430-1, MFC432-1, valve 460-1, valve 465, valve 466, and filter 472. A non-reactive gas such as an inert gas (such as N2) is also supplied from one of the gas sources 428 via valve 443 and added to the first vaporizer assembly between valve 430-1 and MFC432-1 as shown.

[0076] When using two precursors (e.g., MoF6 and WF6), the first vaporized precursor (e.g., MoF6) is vaporized in the first vaporizer assembly 408-1, and the first vaporized precursor is supplied via the heated conduit 448-1, valve 430-1, MFC 432-1, valve 460-1. In addition, the second vaporized precursor (e.g., WF6) is vaporized in the second vaporizer assembly 408-2, and the second vaporized precursor is supplied via the heated conduit 448-2, valve 430-2, MFC 432-2, valve 460-2. The first vaporized precursor and the second vaporized precursor are mixed at the outputs of valves 460-1, 460-2. The first vaporized precursor and the second vaporized precursor are combined (i.e., mixed) at the outputs of valves 460-1, 460-2 upstream of valves 464 and 465. The mixture of the two vaporized precursors is supplied to the processing module (e.g., Figure 1 the processing chamber 112 shown) via valves 465, valve 466. A non-reactive gas such as an inert gas (e.g., N2) is not supplied from the gas source 428 via valve 443 and is not added to the first vaporized precursor and the second vaporized precursor between valves 430-1, 430-2 and MFCs 43-1, 432-2.

[0077] The following refers to Figure 5 the operation of valves 430-1, valve 430-2, MFCs 432-1, MFCs 432-2, valve 460-1, valve 460-2, and valves 464, valve 465, valve 466 is described in detail. Briefly, control valves 430-1, 430-2 (i.e., the inlet valves 430 of the gas tank 404) to control the supply of the first vaporized precursor and the second vaporized precursor to MFCs 432-1, 432-2 respectively. Control valves 460-1, 460-2 (i.e., the outlet valves 460 of the gas tank 404) to control the mixing of the first vaporized precursor and the second vaporized precursor and supply the mixture of the first vaporized precursor and the second vaporized precursor to valves 464, 465. When using only one precursor (e.g., 4MS), control valve 460-1 (i.e., the outlet valve 460-1 of the gas tank 404) to supply the vaporized precursor to valves 464, 465. Combine with other valves to control valve 464 (i.e., the switching valve 464) to control the evacuation of one or more vaporized precursors from the gas tank 404, as described in detail below. Control valve 465 (i.e., the chamber valve 465) to control the supply of a single vaporized precursor (e.g., 4MS) or a mixture of multiple precursors (e.g., MoF6 and WF6) to valve 466. Control valve 466 to control the supply of the vaporized precursor (e.g., 4MS) or the mixture of multiple vaporized precursors (e.g., MoF6 and WF6) to the processing module via the filter 472.

[0078] When a vaporized precursor (e.g., 4MS) or a mixture of multiple precursors (e.g., MoF6 and WF6) is supplied to the processing module, the vaporized precursor (or mixture) must flow into the processing module in a stable state and must flow into the processing module in vapor form to process the substrate. Further, during the process steps and between consecutive process steps, the vaporized precursor (or mixture) must not condense in any of the supply lines (ducts) and valves anywhere from the vaporizer assembly 408 to the processing module.

[0079] The vaporized precursor (or mixture) can be maintained in vapor form between the vaporizer assembly 408 and the gas box 404 by heating the ducts 448-1, 448-2. However, the gas box 404 is typically at room temperature (and typically also at atmospheric pressure), while the vaporizer assembly 408 is at a higher temperature than the gas box 404. Thus, if the vaporized precursor (or mixture) remains in the ducts in the gas box 404 when not being supplied to the processing module (e.g., between two process steps), the vaporized precursor (or mixture) may condense in the ducts and valves in the gas box 404 due to the temperature difference between the vaporizer assembly 408 and the gas box 404. Further, co-flowing two vaporized precursors increases the pressure at the input of the gas box 404, but the gas box 404 is typically at atmospheric pressure, which further exacerbates the risk of condensation of the vaporized precursor in the gas box 404 because the temperature of the vaporizer assembly 408 is greater than the temperature of the gas box 404.

[0080] Therefore, when the vaporized precursor (mixture) is not being supplied to the processing module (e.g., between two process steps), the controller (136 or 228) controls the various valves as described below with respect to Figure 5 to evacuate the vaporized precursor (or mixture) from the gas box 404 by diverting the vaporized precursor (or mixture) to the pre-stage line via the diverter valve 464. Note that during substrate processing, there is no risk of condensation downstream of the valve 465 due to the pressure drop across the MFC and the typically low pressure from the gas box 404 to the processing module.

[0081] In addition, before supplying the vaporized precursor (or mixture) to the processing module, the controller (136 or 228) controls the various valves as described below with respect to Figure 5 to first establish a stable flow of the vaporized precursor (or mixture) and then supply the stable flow of the vaporized precursor (or mixture) to the processing module. The evacuation of the process is after each process step performed in the processing module, and the process of establishing a stable flow is before all the process steps performed in the processing module. The steps of establishing a stable flow and evacuation are alternately and cyclically repeated before and after each process step performed in the processing module, as described in detail below.

[0082] Figure 5shows supplying a single vaporized precursor (e.g., 4MS) or a mixture of two vaporized precursors (e.g., MoF6 and WF6) from the Figure 4 system shown to a processing module (e.g., Figure 1 processing chamber 112 shown) in method 500. For example, method 500 can be executed by controller 136 or 228.

[0083] Method 500 is described with reference to a mixture of two precursors (e.g., MoF6 and WF6). However, method 500 is equally applicable to supplying a single vaporized precursor (e.g., 4MS). Specifically, the sequence of the various valves described below for supplying a mixture of two vaporized precursors (e.g., MoF6 and WF6) is the same as when supplying a single vaporized precursor (e.g., 4MS), except that instead of controlling two inlet valves 430, two MFCs 432, and two outlet valves 460 simultaneously, only one inlet valve 430-1, one MFC 432-1, and one outlet valve 460-1 are controlled. Whether supplying a single vaporized precursor (e.g., 4MS) or a mixture of two vaporized precursors (e.g., MoF6 and WF6) to the processing module, all other valves are controlled in the same manner as described. Thus, although some of the elements are referred to in the plural to describe supplying a mixture of two vaporized precursors (e.g., MoF6 and WF6) to the processing module, when these elements are read in the singular, they describe supplying a single vaporized precursor (e.g., 4MS) to the processing module.

[0084] In the following description, inlet valves 430-1 and 430-2 are collectively referred to as inlet valves, MFCs 432-1 and 432-2 are collectively referred to as MFC 432, and outlet valves 460-1 and 460-2 are collectively referred to as outlet valve 460. Again, although inlet valves 430, MFC 432, and outlet valve 460 are described in the plural when describing supplying a mixture of two vaporized precursors (e.g., MoF6 and WF6), when these elements are read in the singular, these elements describe supplying a single vaporized precursor (e.g., 4MS) to the processing module.

[0085] At 502, the controller closes all valves (e.g., inlet valves 430, outlet valves 460, diverter valve 464, chamber valve 465, and valve 466), and MFCs 432-1, 432-1 (collectively referred to as MFC 432) are closed. The vaporizer assembly 408 supplies the vaporized precursors to the gas tank 404 via separately heated conduits 448-1, 448-2.

[0086] At 504, the controller opens the divert valve 464 connected to the pre-stage pipeline and opens the outlet valve 460 between the MFC 432 and the divert valve 464. At 506, the controller opens the inlet valve 430 to allow the vaporized precursor to flow into the gas box 404. The controller starts the MFC 432 (turns it on and sets its flow rate set point).

[0087] When only one precursor (e.g., 4MS) is supplied, the controller also starts the valve 443 to add a gas or gas mixture (e.g., N2) to each of the vaporized precursors (e.g., 4MS). The vaporized precursor and the added gas or gas mixture combine at the output of the outlet valve 460-1 to form a mixture of the vaporized precursor and the added gas or gas mixture. The mixture of the vaporized precursor and the added gas or gas mixture flows through the divert valve 464 until a steady flow of the mixture of the vaporized precursor and the added gas or gas mixture is established.

[0088] When a mixture of two precursors (e.g., MoF6 and WF6) is supplied, no gas or gas mixture (e.g., N2) is added to either of the two precursors or their mixture. If there is a valve 443, the controller does not start the valve 443 for adding a gas or gas mixture (e.g., N2) to either of the two precursors or their mixture. The two vaporized precursors combine at the output of the outlet valve 460-1 to form a mixture of the two vaporized precursors. The mixture of the two vaporized precursors flows through the divert valve 464 until a steady flow of the mixture of the two vaporized precursors is established. Thereafter, the mixture of the two vaporized precursors and the mixture of the vaporized precursor and the added gas or gas mixture in the example are both referred to as "mixture".

[0089] At 508, after the steady flow of the mixture is established, the controller closes the divert valve 464 connected to the pre-stage pipeline. The controller opens the valves 465 and 466 to supply the steady flow of the mixture to the processing module. At 510, the process steps of the process recipe are performed on the substrate in the processing module using the steady flow of the mixture.

[0090] At 512, the controller determines whether the process step is completed. If the process step is not completed, proceed to step 510. If the process step is completed, then at 514, the controller opens the divert valve 464, closes the inlet valve 430, and simultaneously closes the valves 465 and 466, while keeping the outlet valve 460 open and the MFC 432 on to evacuate the mixture from the gas box 404 via the pre-stage pipeline, thereby preventing the condensation of one or more vaporized precursors in the gas box 404. At 516, the controller closes all valves. To perform the next process step of the process recipe or the process steps of another process recipe, repeat steps 504-516.

[0091] Note that when using two precursors (e.g., MoF6 and WF6), heating the two conduits 448-1 and 448-2 can be optional, depending on the boiling points of the liquid precursors. For example, the boiling point of MoF6 at standard atmospheric pressure is greater than room temperature, but WF6 boils below room temperature. Thus, while the conduit supplying MoF6 (e.g., 448-1) can be heated, the conduit supplying WF6 (e.g., 448-2) need not be heated. Further, when using MoF6 and WF6, the evacuation step described above is intended to prevent condensation of MoF6.

[0092] In addition, when using a single precursor (e.g., 4MS), the vapor pressure of 4MS is higher than the vapor pressure of MoF6. Thus, the evacuation step can be optional when using a single precursor (e.g., 4MS). Accordingly, heating the conduits and the evacuation step depend on the individual chemical and thermodynamic properties of the one or more precursors being used.

[0093] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Thus, while the disclosure includes specific examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon study of the drawings, the specification, and the appended claims. It should be understood that one or more steps in a method can be performed in a different order (or concurrently) without altering the principles of the disclosure. Moreover, while each embodiment has been described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the disclosure.

[0094] A variety of terms are used to describe the spatial and functional relationships between components (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including terms such as "connected", "joined", "coupled", "adjacent", "next to", "on top of", "above", "below", and "disposed". Unless the relationship between a first and a second component is explicitly described as "direct", when such a relationship is described in the above disclosure, the relationship can be a direct relationship where there are no other intermediate components between the first and second components, but can also be an indirect relationship where there is one or more intermediate components between the first and second components (spatially or functionally). As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C".

[0095] In some implementations, the controller is part of a system, which can be part of the above examples. Such systems can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronics for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools and / or load locks connected or docked to a particular system.

[0096] Broadly speaking, a controller can be defined as an electronic device that has various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), and the individual settings (or program files) define the operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0097] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, otherwise networked to, or a combination of the system. For example, the controller can be in the "cloud" or be all or part of a fab host system, which can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, review the history of past manufacturing operations, review trends or performance criteria of multiple manufacturing operations, change the parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system via a network, which can include a local network or the Internet. The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers that are networked together and work towards a common purpose (e.g., the processes and controls described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which are combined to control the process on the chamber.

[0098] Example systems can include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, an orbit chamber or module, and any other semiconductor processing system that can be associated with and / or used in the fabrication and / or preparation of semiconductor wafers.

[0099] As described above, depending on one or more processing steps to be performed by a tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a host computer, another controller, or tools used in a material transport that shuttles a wafer container to and from a tool location and / or load port in a semiconductor manufacturing factory.

Claims

1. A system for supplying vaporized precursors to a processing module of a substrate processing tool, comprising: A first vaporizer assembly configured to vaporize a first liquid precursor and supply the first vaporized precursor via a first conduit; A second vaporizer assembly configured to vaporize a second liquid precursor and supply the second vaporized precursor via a second conduit; And A gas box configured to mix the first vaporized precursor and the second vaporized precursor, supply the mixture of the first vaporized precursor and the second vaporized precursor to the processing module, and at least partially evacuate the mixture from the gas box after a process step is completed to prevent condensation of at least one of the first vaporized precursor and the second vaporized precursor in the gas box.

2. The system according to claim 1, wherein the gas box is further configured to establish a stable flow of the mixture of the first vaporized precursor and the second vaporized precursor before supplying the mixture to the processing module.

3. The system according to claim 1, wherein at least one of the first conduit and the second conduit is heated to supply the first vaporized precursor and the second vaporized precursor in vapor form to the gas box.

4. The system according to claim 1, wherein the gas box is connected to an exhaust system to evacuate the mixture.

5. The system according to claim 1, wherein the gas box is further configured to receive gas from a gas source and add the gas to at least one of the first vaporized precursor and the second vaporized precursor before mixing the first vaporized precursor and the second vaporized precursor.

6. The system according to claim 1, wherein the gas box comprises: A first inlet valve for receiving the first vaporized precursor from the first vaporizer assembly via the first conduit; A second inlet valve for receiving the second vaporized precursor from the second vaporizer assembly via the second conduit; A first mass flow controller connected to the first inlet valve to regulate the flow of the first vaporized precursor; A second mass flow controller connected to the second inlet valve to regulate the flow of the second vaporized precursor; A first outlet valve connected to the first mass flow controller; A second outlet valve connected to the second mass flow controller; A first valve having an input connected to the first outlet valve and the second outlet valve and an output connected to a second valve coupled to the processing module; And A third valve connected between the input of the first valve and the outputs of the first outlet valve and the second outlet valve.

7. The system according to claim 6, further comprising a controller configured to, before supplying the mixture to the processing module: Close the first inlet valve, the second inlet valve, the first outlet valve, the second outlet valve, the first valve, and the second valve, and turn off the first mass flow controller and the second mass flow controller; Open the third valve and the first outlet valve and the second outlet valve; Open the first inlet valve and the second inlet valve to allow the first vaporized precursor and the second vaporized precursor to flow into the gas box via the first conduit and the second conduit; Activate the first mass flow controller and the second mass flow controller to allow the flow of the mixture to reach a steady state; and After the flow of the mixture reaches the steady state, close the third valve and open the first valve and the second valve to supply the mixture to the processing module.

8. The system according to claim 7, wherein the controller is further configured to, after performing the process step using the mixture in the processing module: Open the third valve; Close the first inlet valve, the second inlet valve, the first valve, and the second valve, while keeping the first outlet valve and the second outlet valve open and keeping the first mass flow controller and the second mass flow controller activated, to evacuate the mixture from the gas box and prevent at least one of the first vaporized precursor and the second vaporized precursor in the gas box from condensing; Close the first inlet valve, the second inlet valve, the first outlet valve, the second outlet valve, the first valve, and the second valve; and Deactivate the first mass flow controller and the second mass flow controller.

9. The system according to claim 1, further comprising: A first heater coupled to the first conduit; A second heater coupled to the second conduit; and A controller configured to control the first heater and the second heater to heat the first conduit and the second conduit to a first temperature and a second temperature, respectively, so as to maintain the first vaporized precursor and the second vaporized precursor in the first conduit and the second conduit in a vapor form.

10. The system according to claim 1, further comprising: A first heater coupled to the first vaporizer assembly; A second heater coupled to the second vaporizer assembly; and A controller configured to control the first heater and the second heater to heat the first liquid precursor and the second liquid precursor to a first temperature and a second temperature, respectively, to vaporize the first liquid precursor and the second liquid precursor into the first vaporized precursor and the second vaporized precursor.

11. The system according to claim 1, wherein the first liquid precursor and the second liquid precursor comprise molybdenum hexafluoride and tungsten hexafluoride, respectively.

12. The system according to claim 1, wherein the first vaporizer assembly and the second vaporizer assembly are located in a facility supply cabinet outside the substrate processing tool, and wherein the gas box is mounted on or within the substrate processing tool.

13. The system according to claim 1, wherein the first vaporizer assembly and the second vaporizer assembly are located under the floor of a facility including the substrate processing tool, and wherein the gas box is mounted on or within the substrate processing tool.

14. A system for supplying a vaporized precursor to a processing module of a substrate processing tool, comprising: A vaporizer assembly configured to vaporize a liquid precursor and supply the vaporized precursor via a conduit; and A gas box configured to supply the vaporized precursor to the processing module and at least partially evacuate the vaporized precursor from the gas box after completion of a process step to prevent condensation of the vaporized precursor in the gas box.

15. The system according to claim 14, wherein the gas box further comprises establishing a steady flow of the vaporized precursor before supplying the vaporized precursor to the processing module.

16. The system according to claim 14, wherein the conduit is heated to supply the vaporized precursor in vapor form to the gas box.

17. The system according to claim 14, wherein the gas box is connected to the exhaust system to evacuate the vaporized precursor.

18. The system according to claim 14, wherein the gas box is further configured to receive gas from a gas source and add the gas to the vaporized precursor.

19. The system according to claim 14, wherein the gas box comprises: An inlet valve for receiving the vaporized precursor from the vaporizer assembly via the conduit; A mass flow controller connected to the inlet valve to regulate the flow of the vaporized precursor; An outlet valve connected to the mass flow controller; A first valve having an input portion connected to an output portion of the outlet valve and having an output portion connected to a second valve coupled to the processing module; And A third valve connected between the input portion of the first valve and the output portion of the outlet valve.

20. The system according to claim 19, further comprising a controller configured to, before supplying the vaporized precursor to the processing module: Close the inlet valve and the outlet valve, the first valve and the second valve, and turn off the mass flow controller; Open the third valve and the outlet valve; Open the inlet valve to allow the vaporized precursor to flow into the gas box via the conduit; Activate the mass flow controller to allow the flow of the vaporized precursor to reach a steady state; And After the flow of the vaporized precursor reaches a steady state, close the third valve and open the first valve and the second valve to supply the vaporized precursor to the processing module.

21. The system according to claim 20, wherein the controller is further configured to, after performing the process step using the vaporized precursor in the processing module: Open the third valve; Close the inlet valve and the first valve and the second valve while keeping the outlet valve open and keeping the mass flow controller activated to evacuate the vaporized precursor from the gas box and prevent condensation of the vaporized precursor in the gas box; and Close the inlet valve and the outlet valve and the first valve and the second valve, and turn off the mass flow controller.

22. The system according to claim 14, further comprising: A heater coupled to the conduit; and A controller configured to control the heater to heat the conduit to maintain the vapor precursor in the conduit in vapor form.

23. The system according to claim 14, further comprising: A heater coupled to the vaporizer assembly; and A controller configured to control the heater to heat the liquid precursor to vaporize the liquid precursor into the vapor precursor.

24. The system according to claim 19, wherein the gas tank further comprises a fourth valve connected to a source of inert gas, the fourth valve being connected between the inlet valve and the mass flow controller to add the inert gas to the vapor precursor.

25. The system according to claim 14, wherein the liquid precursor comprises tetramethylsilane.

26. The system according to claim 19, further comprising a filter connected between the second valve and the processing module to filter contaminants from the vapor precursor supplied to the processing module.

27. The system according to claim 14, wherein the vaporizer assembly is located in a facility supply cabinet external to the substrate processing tool, and wherein the gas tank is mounted on or within the substrate processing tool.

28. The system according to claim 14, wherein the vaporizer assembly is located beneath the floor of a facility housing the substrate processing tool, and wherein the gas tank is mounted on or within the substrate processing tool.

Images