Electron transport layer comprising mixed composition, method for manufacturing light-emitting element comprising same, light-emitting element, and electronic device

Abstract

Disclosed are: an electron transport layer comprising a mixed composition containing a solvent, a metal oxide, and a metal halogen compound; a method for manufacturing a light-emitting element including the electron transport layer; a light-emitting element thus manufactured; and an electronic device including the light emitting element.

Description

Technical Field

[0001] The present disclosure relates to an electron transport layer including a hybrid composition, a method of manufacturing a light-emitting element including the electron transport layer, a light-emitting element, and an electronic device. Background Art

[0002] A light-emitting element is a device that converts electrical energy into light energy. Examples of such light-emitting elements include an organic light-emitting element in which a light-emitting material is an organic material and a quantum dot light-emitting element in which a light-emitting material is a quantum dot.

[0003] In a light-emitting element, a first electrode is disposed on a substrate, and a hole transport region, a light-emitting layer, an electron transport region, and a second electrode are sequentially disposed on the first electrode. Holes provided by the first electrode move toward the light-emitting layer through the hole transport region, and electrons provided by the second electrode move toward the light-emitting layer through the electron transport region. Charge carriers such as holes and electrons recombine in the light-emitting layer to generate excitons. These excitons transition from an excited state to a ground state, thereby generating light. Summary of the Invention

[0004] Technical Problem

[0005] Disclosed are an electron transport layer including a hybrid composition, a method of manufacturing a light-emitting element including the electron transport layer, a light-emitting element, and an electronic device. More specifically, disclosed is an electron transport layer including a hybrid composition capable of reducing oxygen vacancies, a method of manufacturing a light-emitting element including the electron transport layer, and a light-emitting element and an electronic device each manufactured by using the method.

[0006] Solution to the Problem

[0007] Disclosed is an electron transport layer including a hybrid composition including:

[0008] a solvent,

[0009] a metal oxide, and

[0010] a metal halide compound.

[0011] In an embodiment,

[0012] the metal oxide may be represented by Formula 1:

[0013] <Formula 1>

[0014] M 1 1-x M 2 x O y

[0015] wherein, in Formula 1,

[0016] M 1 and M 2 may each independently include Zn, Mg, Co, Mn, Y, Al, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu, Ag, In, Nb, Fe, Ce, Sr, Ba, Si, Ga, or a combination thereof,

[0017] x may be 0 ≤ x ≤ 1, and y may be 0 < y ≤ 5.

[0018] In an embodiment, the metal halide compound may be represented by Formula 2:

[0019] <Formula 2>

[0020] M 3 (X 1 ) n1

[0021] wherein, in Formula 2,

[0022] M 3 may be Al, Zn, In, Ga, Ti, Mg, or Li,

[0023] X 1 may be F, Cl, Br, I, or a combination thereof, and

[0024] n1 may be an integer from 1 to 3.

[0025] According to an embodiment, a method of manufacturing a light-emitting device includes providing a light-emitting layer containing quantum dots on a first electrode,

[0026] providing an electron transport layer by providing the hybrid composition described above on the light-emitting layer, and

[0027] providing a second electrode on the electron transport layer.

[0028] According to an embodiment, a light-emitting device includes a first electrode,

[0029] a second electrode facing the first electrode,

[0030] a light-emitting layer disposed between the first electrode and the second electrode, and

[0031] an electron transport layer disposed between the light-emitting layer and the second electrode,

[0032] wherein the electron transport layer includes a mixture of a metal oxide and a metal halide compound.

[0033] According to an embodiment, an electronic device includes the light-emitting device.

[0034] Advantageous Effects of the Invention

[0035] The hybrid composition according to the embodiment can reduce oxygen vacancies on the surface of the metal oxide and improve the luminous efficiency and service life by suppressing exciton quenching generated in the light-emitting layer and minimizing hole leakage current. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 is a schematic diagram of an embodiment of the structure of the hybrid composition;

[0037] Figure 2 is a schematic diagram of an embodiment of the structure of the light-emitting element;

[0038] Figure 3 is a schematic diagram of an embodiment of the structure of the electronic device;

[0039] Figure 4 is a schematic diagram of an embodiment of the structure of the electronic device;

[0040] FIG. 5A is a scanning electron microscope (SEM) image of an example of Film A;

[0041] FIG. 5B is an SEM image of an example of Film B;

[0042] FIG. 6A is a graph of the count (arbitrary unit, a.u.) versus energy (kiloelectron volts, keV) showing the results of energy-dispersive X-ray spectroscopy (EDS) analysis of an example of Film A; and

[0043] FIG. 6B is a graph of the count (a.u.) versus energy (keV) showing the results of EDS analysis of an example of Film B. DETAILED DESCRIPTION

[0044] Since the present disclosure can have various modified embodiments, embodiments are illustrated in the drawings and described in the detailed description. When referring to the embodiments described in conjunction with the drawings, the effects and characteristics of the present disclosure and the methods for achieving these will be apparent. However, the present disclosure can be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. The same reference numerals refer to the same elements throughout.

[0045] In this specification, the terms "first" and "second" are used for the purpose of distinguishing one component from another and are not used to limit the components.

[0046] Expressions used in the singular encompass plural expressions unless they have a clearly different meaning in the context.

[0047] It should be further understood that the terms "includes" and / or "comprises" as used herein specify the presence of the stated feature or element, but do not preclude the presence or addition of one or more other features or elements. Unless otherwise defined, the term "including or having" may refer to both the case consisting of the features or components described in the specification and the case further including other components.

[0048] As used herein, the term "Group II" may include Group IIA elements and Group IIB elements in the IUPAC periodic table of elements. Examples of Group II elements may include Cd, Mg, and Zn, but the embodiments are not limited thereto.

[0049] As used herein, the term "Group III" may include Group IIIA elements and Group IIIB elements in the IUPAC periodic table of elements. Examples of Group III elements may include Al, In, Ga, and Tl, but the embodiments are not limited thereto.

[0050] As used herein, the term "Group IV" may include Group IVA elements and Group IVB elements in the IUPAC periodic table of elements. Examples of Group IV elements may include Si, Ge, and Sn, but the embodiments are not limited thereto.

[0051] As used herein, the term "Group V" may include Group VA elements in the IUPAC periodic table of elements. Examples of Group V elements may include N, P, As, Sb, and Bi, but the embodiments are not limited thereto. As used herein, the term "Group VI" may include Group VIA elements in the IUPAC periodic table of elements. Examples of Group VI elements may include O, S, Se, and Te, but the embodiments are not limited thereto.

[0052] As used herein, the term "metal" may include metalloids, such as Si. Examples of metalloids may include B, Si, Ge, As, Sb, Te, etc.

[0053] Hereinafter, a mixed composition according to an embodiment may be described.

[0054] [Mixed Composition]

[0055] Figure 1 is a schematic diagram of the structure of a mixed composition according to an embodiment.

[0056] Hereinafter, reference will be made to Figure 1 describe a mixed composition according to an embodiment.

[0057] Reference Figure 1 , the mixed composition 3 may include metal oxide 1 and metal halide compound 2.

[0058] The metal halide compound 2 may comprise at least one metal atom 4 and at least one halogen atom 5.

[0059] That is, the mixed composition 3 may comprise the metal oxide 1, the metal atom 4, and the halogen atom 5.

[0060] The metal atom 4 may have a positive charge.

[0061] The halogen atom 5 may have a negative charge.

[0062] In an embodiment, the mixed composition may be amorphous, ionic, or may be both amorphous and ionic.

[0063] As used herein, the term "amorphous" refers to a solid state in which there is no long-range order in the atomic positions. As used herein, the term "ionic" refers to a state in which atoms have a charge by losing or gaining electrons, and as used herein "ionic" means existing as ions.

[0064] In an embodiment, the metal oxide may be represented by Formula 1:

[0065] <Formula 1>

[0066] M 1 1-x M 2 x O y

[0067] Wherein, in Formula 1,

[0068] M 1 and M 2 may each independently comprise Zn, Mg, Co, Mn, Y, Al, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu, Ag, In, Nb, Fe, Ce, Sr, Ba, Si, Ga, or a combination thereof,

[0069] x may satisfy 0 ≤ x ≤ 1, and y may satisfy 0 < y ≤ 5.

[0070] In an embodiment, M 1 may be Zn, and x may satisfy 0 ≤ x ≤ 0.5.

[0071] In an embodiment, the metal oxide 1 may comprise a zinc-containing oxide.

[0072] In an embodiment, the metal oxide 1 can be ZnO, TiO2, ZrO2, SnO2, WO3, W2O3, WO2, Ta2O5, NiO, MoO2, MoO3, CuO, Cu2O, ZnMgO, ZnCoO, ZnMnO, ZnSnO, ZnAlO, ZnSiO, ZnYbO, or a combination thereof.

[0073] In an embodiment, the average diameter (D50) of the metal oxide 1 can be from about 1 nanometer (nm) to about 50 nm. The average diameter of the metal oxide can be measured by a dynamic light scattering (DLS) method. The average diameter can be the mean diameter or the median diameter of the metal oxide measured by the DLS method.

[0074] For example, the metal oxide 1 can be spherical in shape, such as substantially spherical.

[0075] In an embodiment, the metal halide compound 2 can be represented by Formula 2:

[0076] <Formula 2>

[0077] M 3 (X 1 ) n1

[0078] wherein, in Formula 2,

[0079] M 3 can be a metal,

[0080] X 1 can be F, Cl, Br, I, or a combination thereof, and

[0081] n1 can be an integer from 1 to 3.

[0082] M 3 can be Al, Zn, In, Ga, Ti, Mg, Li, Na, K, Rb, or Cs. M 3 can be Al, Zn, In, Ga, Ti, Mg, or Li.

[0083] For example, M 3 can be Al, and in this case, n1 can be 3.

[0084] In an embodiment, the metal halide compound 2 can be AlF3, AlCl3, AlBr3, AlI3, or a combination thereof.

[0085] The hybrid composition can be included in the electron transport region. For example, the hybrid composition can be included in the electron transport layer.

[0086] The hybrid composition can be used in a light-emitting element.

[0087] In a metal oxide 1 (e.g., metal oxide nanoparticles), for example, metal oxide nanoparticles such as ZnO, multiple oxygen vacancies may exist in its crystal. Due to the oxygen vacancies inside the nanoparticles, the nanoparticles can be n-type and can have high electrical conductivity. In addition, the energy level of the conduction band of the metal oxide nanoparticles can be similar to that of the conduction band of quantum dots. Therefore, the metal oxide nanoparticles can have excellent electron injection characteristics, and a metal oxide layer containing the metal oxide nanoparticles can be used as an electron injection layer or an electron transport layer in a quantum dot light-emitting device.

[0088] However, due to the energy level change caused by the oxygen vacancies on the surface of the metal oxide nanoparticles, the oxygen vacancies on the surface can serve as electron traps. Therefore, electrons injected from the electron injection electrode can be trapped on the surface of the metal oxide nanoparticles. As a result, electrons may not be injected into the light-emitting layer, and thus, the electron injection and transport efficiency can be reduced. In addition, defect-assisted non-radiative recombination or Auger-type non-radiative recombination can occur in the quantum dot light-emitting layer adjacent to the metal oxide layer, thereby deteriorating the light-emitting efficiency.

[0089] Since the mixed composition according to an embodiment contains a metal oxide and a metal halide compound, and the metal halide compound provides metal cations and halogen anions between the metal oxides, the mixed composition can be an amorphous substance, an ion, or a mixed form thereof. In one aspect, the mixed composition can be amorphous, ionic, or can be both amorphous and ionic.

[0090] Therefore, metal cations are dispersed between the metal oxides, and thus, in the process of manufacturing a light-emitting device accompanied by a heat treatment process, an amorphous metal oxide can be formed, and the packing density of the components in the electron transport layer can be increased, which is beneficial to the control of hole leakage current.

[0091] In addition, the number of electron trap sites on the surface of the halogen anions can be reduced, and thus, the electron injection efficiency from the electron transport layer containing the mixed composition to the light-emitting layer can be improved. In addition, since the exciton quenching generated in the light-emitting layer is suppressed, the efficiency of the light-emitting device can be improved.

[0092] In addition, the service life characteristics of the light-emitting device can be improved by fundamentally controlling the cause of deterioration occurring at the interface adjacent to the light-emitting layer due to excessive charge injection.

[0093] Therefore, a light-emitting device using the mixed composition can have excellent driving characteristics, such as a low driving voltage, high efficiency, and / or a long service life.

[0094] In an embodiment, based on 100 parts by weight of the metal oxide, the content of the metal halide compound in the mixed composition can be greater than or equal to about 0.1 part by weight and less than or equal to about 50 parts by weight. For example, greater than or equal to about 0.1 part by weight and less than or equal to about 50 parts by weight, greater than or equal to about 0.1 part by weight and less than or equal to about 45 parts by weight, greater than or equal to about 0.1 part by weight and less than or equal to about 40 parts by weight, greater than or equal to about 0.1 part by weight and less than or equal to about 35 parts by weight, or greater than or equal to about 0.1 part by weight and less than or equal to about 30 parts by weight. However, the embodiments of the present disclosure are not limited thereto.

[0095] In an embodiment, based on 100 parts by weight of the solvent, the content of the metal oxide in the mixed composition can be greater than or equal to about 0.1 part by weight and less than or equal to about 50 parts by weight. For example, greater than or equal to about 0.1 part by weight and less than or equal to about 50 parts by weight, greater than or equal to about 0.5 part by weight and less than or equal to about 50 parts by weight, greater than or equal to about 0.1 part by weight and less than or equal to about 45 parts by weight, or greater than or equal to about 0.1 part by weight and less than or equal to about 40 parts by weight. However, the embodiments of the present disclosure are not limited thereto.

[0096] The mixed composition can include a solvent. The solvent can be any suitable solvent that can appropriately disperse the metal oxide and the metal halide compound. However, the embodiments are not limited thereto.

[0097] For example, the solvent can be an organic solvent.

[0098] In an embodiment, the solvent can be an alcohol (e.g., an alcohol-based solvent), a halide such as a chloride (e.g., a chlorine-based solvent), an ether (e.g., an ether-based solvent), an ester (e.g., an ester-based solvent), a ketone (e.g., a ketone-based solvent), an aliphatic hydrocarbon (e.g., an aliphatic hydrocarbon-based solvent), or an aromatic hydrocarbon (e.g., an aromatic hydrocarbon-based organic solvent). However, the embodiments are not limited thereto. In one aspect, the solvent can include an alcohol, an ether, an ester, a ketone, an aliphatic hydrocarbon such as a C1 to C18 aliphatic hydrocarbon, an aromatic hydrocarbon such as a C6 to C20 aromatic hydrocarbon, or a combination thereof, wherein any of the foregoing can optionally be substituted with a halogen such as chlorine.

[0099] In an embodiment, the solvent may include: alcohol-based solvents such as methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, sec-butanol or tert-butanol; chlorine-based solvents such as dichloromethane, 1,2-dichloroethane, 1,1,2-trichloroethane, chlorobenzene or o-dichlorobenzene; ether-based solvents such as tetrahydrofuran, dioxane, anisole, 4-methylanisole or butyl phenyl ether; ester-based solvents such as ethyl acetate, butyl acetate, methyl benzoate, ethyl benzoate, butyl benzoate or phenyl benzoate; ketone-based solvents such as acetone, methyl ethyl ketone, cyclohexanone or acetophenone; aliphatic hydrocarbon-based solvents such as cyclohexane, methylcyclohexane, n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, dodecane, hexadecane or octadecane; aromatic hydrocarbon-based solvents such as toluene, xylene, mesitylene, ethylbenzene, n-hexylbenzene, cyclohexylbenzene, trimethylbenzene, tetralin; or a combination thereof, but the embodiment is not limited thereto.

[0100] The content of the solvent in the mixed composition may be about 80 weight percent (wt%) or greater than 80 wt% and about 99.5 wt% or less than 99.5 wt%, or for example about 90 wt% or greater than 90 wt% and 99 wt% or less than 99 wt%, about 92 weight percent or greater than 92 wt% and 98 wt% or less than 98 wt%, but the embodiment is not limited thereto. When the content is within any of these ranges, the metal oxide and metal halide compound in the mixed composition can be appropriately dispersed, and the solid concentration can be suitable for solution processes.

[0101] The mixed composition may have a viscosity of about 1 centipoise (cP) to about 30 cP. The mixed composition satisfying this viscosity range may be suitable for forming an electron transport layer of a light-emitting element by using a solution process.

[0102] The surface tension of the mixed composition may be about 10 dynes per centimeter (dyne / cm) to about 40 dyne / cm. The mixed composition satisfying this surface tension range may be suitable for forming an electron transport layer of a light-emitting element by using a solution process.

[0103] [Method for manufacturing a light-emitting element]

[0104] The method for manufacturing a light-emitting element may include: disposing (e.g., forming) a light-emitting layer containing quantum dots on a first electrode;

[0105] forming an electron transport layer by providing the above-described mixed composition on the light-emitting layer, and

[0106] forming a second electrode on the electron transport layer to manufacture a light-emitting element.

[0107] In an embodiment, the setting of the light-emitting layer may include providing a quantum dot composition containing quantum dots and a solvent on the first electrode, and removing the solvent.

[0108] After providing the quantum dot composition on the first electrode, the solvent may be removed by vacuum or heat to form the light-emitting layer, but the embodiment is not limited thereto.

[0109] For example, the removal of the solvent may be carried out at a predetermined temperature, for example, at about 50 °C to about 150 °C. For example, heat treatment may be carried out under vacuum.

[0110] The quantum dot composition may be provided on the first electrode to a thickness of about 10 nm to about 100 nm.

[0111] In an embodiment, the formation of the electron transport layer may include: providing the above-described mixed composition on the light-emitting layer; and removing the solvent.

[0112] In an embodiment, the formation of the electron transport layer may include: providing a first composition containing a metal oxide and a solvent on the light-emitting layer;

[0113] providing a second composition containing a metal halide compound and a solvent on the first composition; and

[0114] removing the solvent.

[0115] After providing the mixed composition on the light-emitting layer, the solvent may be removed by vacuum or heat to form the electron transport layer, but the embodiment is not limited thereto.

[0116] For example, the removal of the solvent may be carried out at a predetermined temperature, for example, at about 50 °C to about 150 °C. For example, heat treatment may be carried out under vacuum.

[0117] The quantum dot composition and the mixed composition may be provided on the first electrode by using a solution process, but the embodiment is not limited thereto. For example, the solution process may be inkjet printing, drop casting, spin coating, dip coating, spraying, flow coating, or screen printing, but the embodiments of the present disclosure are not limited thereto.

[0118] The solvent may include an organic solvent as described above.

[0119] In some embodiments, the solution process may be carried out by spin coating, casting, gravure coating, bar coating, roll coating, dip coating, spraying, screen coating, flexographic printing, offset printing, inkjet printing, or nozzle printing, but the embodiment is not limited thereto.

[0120] In an embodiment, the method may further include, after forming the second electrode, heat-treating the first electrode, the light-emitting layer, the electron transport layer, and the second electrode at about 50°C to about 250°C, at about 50°C to about 200°C, or at about 100°C to about 150°C. By additionally heat-treating the light-emitting element, metal cations and halogen anions released from the metal halide compound may be located between the metal oxides, thereby forming an amorphous metal oxide. Accordingly, the packing density of the components in the electron transport layer may be further increased, which results in improved efficiency and lifetime characteristics.

[0121] For example, the heat treatment may be performed for about 1 hour to about 240 hours.

[0122] [Light-emitting element]

[0123] The light-emitting element may include: a first electrode; a second electrode facing the first electrode; a light-emitting layer disposed (e.g., arranged) between the first electrode and the second electrode; and an electron transport layer disposed between the light-emitting layer and the second electrode, wherein the electron transport layer may contain a mixture of a metal oxide and a metal halide compound.

[0124] In an embodiment, the electron transport layer may have a single-layer structure.

[0125] In an embodiment, the metal oxide and the metal halide compound in the electron transport layer may be uniform.

[0126] In an embodiment, the degree of dispersion of the metal oxide in the electron transport layer may increase or decrease toward the light-emitting layer. For example, the concentration gradient of the metal oxide in the electron transport layer may be achieved by a multi-layer lamination process; however, the present disclosure is not limited thereto.

[0127] In an embodiment, the degree of dispersion of the metal halide compound in the electron transport layer may increase or decrease toward the light-emitting layer. For example, the concentration gradient of the metal halide compound in the electron transport layer may be achieved by a multi-layer lamination process; however, the present disclosure is not limited thereto.

[0128] In an embodiment, the light-emitting layer may contain quantum dots.

[0129] As used herein, the term "quantum dot" refers to a crystal of a semiconductor compound and may include any suitable material capable of emitting light of various emission wavelengths depending on the size of the crystal.

[0130] The quantum dots included in the light-emitting layer may include II-VI group semiconductor compounds, III-V group semiconductor compounds, III-VI group semiconductor compounds, I-III-VI group semiconductor compounds, IV-VI group semiconductor compounds, group IV elements or compounds, or combinations thereof.

[0131] Examples of II-VI group semiconductor compounds can include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe or MgS; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe or MgZnS; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe or HgZnSTe; or combinations thereof.

[0132] Examples of III-V group semiconductor compounds can include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs or InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAIP, InNAs, InNSb, InPAs or InPSb; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb; or combinations thereof. In an embodiment, the III-V group semiconductor compound can further contain a Group II element. Examples of III-V group semiconductor compounds further containing a Group II element can include InZnP, InGaZnP, InAlZnP, etc.

[0133] Examples of III-VI group semiconductor compounds are: binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3 or InTe; ternary compounds such as InGaS3 or InGaSe3; or combinations thereof.

[0134] Examples of I-III-VI group semiconductor compounds can include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2 or AgAlO2; or combinations thereof.

[0135] Examples of group IV-VI semiconductor compounds can include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe, or SnPbSTe; or combinations thereof.

[0136] Group IV elements or compounds can be: single-element materials such as Si or Ge; binary compounds such as SiC or SiGe; or combinations thereof.

[0137] Each element contained in a multi-element compound (such as a binary compound, ternary compound, and quaternary compound) can be present in the particles at a uniform concentration or a non-uniform concentration.

[0138] At the same time, the quantum dots can have a single structure, in which the concentration of each element in the quantum dots is uniform, or a core-shell dual structure. For example, the material contained in the core and the material contained in the shell can be different from each other.

[0139] In an embodiment, the core can contain Zn, Te, Se, Cd, In, P, or combinations thereof. For example, the core can contain InP, InZnP, ZnSe, ZnTeS, ZnSeTe, or combinations thereof.

[0140] The shell of the quantum dots can act as a protective layer to prevent chemical denaturation of the core to maintain semiconductor properties and / or a charging layer to impart electrophoretic properties to the quantum dots. The shell can be a single layer or multiple layers. The interface between the core and the shell can have a concentration gradient, where the concentration of the elements present in the shell decreases towards the center of the core.

[0141] Examples of the shell of the quantum dots can be oxides of metals, metalloids or non-metals, semiconductor compounds, or combinations thereof. Examples of oxides of metals, metalloids or non-metals are binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4 or NiO; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4 or CoMn2O4; or combinations thereof. Examples of semiconductor compounds can include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds or combinations thereof. In an embodiment, the semiconductor compound can be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, ZnSeTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb or combinations thereof.

[0142] In an embodiment, the shell can have a composition different from that of the core, and the shell can comprise ZnS, ZnSe, ZnSeS, ZnTeS, ZnSeTe or combinations thereof.

[0143] The quantum dots can each have a full width at half maximum (FWHM) of a peak of the emission wavelength of about 45 nm or less than 45 nm, about 40 nm or less than 40 nm, or about 30 nm or less than 30 nm. When the FWHM of the quantum dots is within this range, color purity or color reproducibility can be improved. In addition, since the light emitted by the quantum dots is emitted in all directions, a wide viewing angle can be improved.

[0144] In an embodiment, the diameter of the quantum dots can be from about 1 nm to about 20 nm. When the average diameter of the quantum dots is within any of these ranges, specific behaviors as quantum dots can be achieved, and excellent dispersibility of the composition can be obtained. The average diameter of the quantum dots can be measured by a dynamic light scattering (DLS) method. The average diameter can be the average diameter (mean diameter) or the median diameter of the quantum dots measured by the DLS method. In addition, the quantum dots can be in the form of spherical nanoparticles, pyramidal nanoparticles, multi-armed nanoparticles, cubic nanoparticles, nanotubes, nanowires, nanofibers or nanoplates.

[0145] Since the band gap can be adjusted by controlling the size (e.g., diameter) of the quantum dots, light with various wavelength bands can be obtained from the quantum dot light-emitting layer. Therefore, by using quantum dots of different sizes, a light-emitting element that emits light of various wavelengths can be realized. In an embodiment, the size of the quantum dots can be selected to emit red light, green light, and / or blue light. In addition, the size of the quantum dots can be configured to emit white light through a combination of lights of various colors.

[0146] Quantum dots can be synthesized by a wet chemical process, a metalorganic chemical vapor deposition process, a molecular beam epitaxy process, or any suitable process similar thereto.

[0147] The wet chemical process is a method that includes mixing precursor materials with an organic solvent and then growing quantum dot particle crystals. When the crystals grow, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot crystals and controls the growth of the crystals, such that the growth of the quantum dot particles can be controlled by a process that is less costly and easier than vapor deposition methods (e.g., metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE)).

[0148] In an embodiment, the light-emitting layer can include a single layer of quantum dots. In an embodiment, the light-emitting layer can include 2 to 20 single layers of quantum dots.

[0149] The thickness of the light-emitting layer can be about 5 nm to about 200 nm, about 10 nm to about 150 nm, or, for example, about 10 nm to about 100 nm.

[0150] For example, the electron transport layer can be a layer formed using a mixed composition according to an embodiment.

[0151] In an embodiment, the first electrode can be an anode, the second electrode can be a cathode, the light-emitting element can further include a hole transport region disposed between the first electrode and the light-emitting layer and an electron transport region disposed between the light-emitting layer and the second electrode, and the electron transport region can include an electron transport layer.

[0152] The electron transport region can include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or a combination thereof. The electron transport layer can be a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.

[0153] The thickness of the electron transport layer can be about 2 nm to about 250 nm, about 10 nm to about 200 nm, or, for example, about 5 nm to about 250 nm. Therefore, damage to the light-emitting layer can be prevented when the second electrode is formed.

[0154] In an embodiment, in the electron transport layer, a metal halide compound, i.e., a metal cation and a halogen anion, may be present between the particles of the metal oxide.

[0155] In an embodiment, the metal oxide may be a zinc-containing oxide.

[0156] In an embodiment, the metal oxide may be ZnO, TiO2, ZrO2, SnO2, WO3, W2O3, WO2, Ta2O5, NiO, MoO2, MoO3, CuO, Cu2O, ZnMgO, ZnCoO, ZnMnO, ZnSnO, ZnAlO, ZnSiO, ZnYbO, or a combination thereof.

[0157] Due to the metal halide compound contained in the electron transport layer, during the process of manufacturing a light-emitting element accompanied by a heat treatment process, an amorphous metal oxide can be formed, and the packing density of the components in the electron transport layer can be increased, which is beneficial to the control of the hole leakage current. In addition, the number of electron trap sites on the surface of the metal oxide can be reduced, which leads to improved efficiency of electron injection from the electron transport layer containing the mixed composition to the light-emitting layer.

[0158] Therefore, the light-emitting element can exhibit excellent driving characteristics, such as a low driving voltage, high efficiency, and / or a long service life.

[0159] Figure 2 description of

[0160] Figure 2 is a schematic cross-sectional view of a light-emitting element 10 according to an embodiment. The light-emitting element 10 includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0161] Hereinafter, the structure of the light-emitting element 10 according to an embodiment and a method of manufacturing the light-emitting element 10 will be described in conjunction with Figure 2 description.

[0162] [First electrode 110]

[0163] In Figure 2 , a substrate may additionally be located below the first electrode 110 or above the second electrode 150. As the substrate, a glass substrate or a plastic substrate may be used. In an embodiment, the substrate may be a flexible substrate and may include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or a combination thereof.

[0164] ​The first electrode 110 can be formed by, for example, depositing or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 can be a high work function material that facilitates hole injection.

[0165] The first electrode 110 can be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, the material for forming the first electrode 110 can include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or a combination thereof. In an embodiment, when the first electrode 110 is a semi-transmissive electrode or a reflective electrode, the material for forming the first electrode 110 can include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or a combination thereof.

[0166] The first electrode 110 can have a single-layer structure composed of a single layer or a multi-layer structure including multiple layers. For example, the first electrode 110 can have a three-layer structure of ITO / Ag / ITO.

[0167] [Intermediate layer 130]

[0168] The intermediate layer 130 can be disposed on (e.g., located on) the first electrode 110. The intermediate layer 130 can include a light-emitting layer.

[0169] The intermediate layer 130 can further include a hole transport region located between the first electrode 110 and the light-emitting layer and an electron transport region located between the light-emitting layer and the second electrode 150.

[0170] In addition to various organic materials, the intermediate layer 130 can further contain metal-containing compounds (e.g., organometallic compounds), inorganic materials (e.g., quantum dots), etc.

[0171] In an embodiment, the intermediate layer 130 can include i) two or more emission units stacked in sequence between the first electrode 110 and the second electrode 150, and ii) a charge generation layer located between the two or more emission units. When the intermediate layer 130 includes the emission units and the charge generation layer as described above, the light-emitting element 10 can be a series light-emitting element.

[0172] [Hole transport region in intermediate layer 130]

[0173] The hole transport region can have: i) a single-layer structure composed of a single layer of a single material, ii) a single-layer structure composed of a single layer of a plurality of different materials, or iii) a multi-layer structure including multiple layers of different materials.

[0174] The hole transport region may include a hole injection layer, a hole transport layer, a light emission assisting layer, an electron blocking layer, or a combination thereof.

[0175] For example, the hole transport region may have a multilayer structure, including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / light emission assisting layer structure, a hole injection layer / light emission assisting layer structure, a hole transport layer / light emission assisting layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, and the layers of each structure are stacked in sequence from the first electrode 110.

[0176] The hole transport region may contain a compound represented by Formula 201, a compound represented by Formula 202, or a combination thereof:

[0177] <Formula 201>

[0178]

[0179] <Formula 202>

[0180]

[0181] Wherein, in Formula 201 and Formula 202,

[0182] L 201 to L 204 may each independently be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group,

[0183] L 205 may be *-O-*', *-S-*', *-N(Q 201 )-*', an unsubstituted or at least one R 10a substituted C1-C 20 alkylene group, an unsubstituted or at least one R 10a substituted C2-C 20 alkenylene group, an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group, or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group,

[0184] xa1 to xa4 may each independently be an integer from 0 to 5,

[0185] xa5 may be an integer from 1 to 10,

[0186] R 201to R 204 and Q 201 may each independently be unsubstituted or substituted by at least one R 10a substituted C3-C 60 carbocyclic group or unsubstituted or substituted by at least one R 10a substituted C1-C 60 heterocyclic group,

[0187] R 201 and R 202 may optionally be linked to each other via a single bond, an unsubstituted or at least one R 10a substituted C1-C5 alkylene group or an unsubstituted or at least one R 10a substituted C2-C5 alkenylene group to form an unsubstituted or at least one R 10a substituted C8-C 60 polycyclic group (e.g., a carbazole group) (e.g., compound HT16),

[0188] R 203 and R 204 may optionally be linked to each other via a single bond, an unsubstituted or at least one R 10a substituted C1-C5 alkylene group or an unsubstituted or at least one R 10a substituted C2-C5 alkenylene group to form an unsubstituted or at least one R 10a substituted C8-C 60 polycyclic group, and

[0189] na1 can be an integer from 1 to 4.

[0190] For example, each of Formula 201 and Formula 202 may include at least one of the groups represented by Formula CY201 to Formula CY217:

[0191]

[0192] In Formulas CY201 to CY217, R 10b and R 10c may each be the same as described for R 10a , and ring CY 201 to ring CY 204 may each independently be a C3-C 20 carbocyclic group or a C1-C 20 heterocyclic group, and at least one hydrogen in Formulas CY201 to CY217 may be unsubstituted or substituted by R as described above 10a substituted.

[0193] In an embodiment, ring CY in Formulas CY201 to CY217201 to ring CY 204 may each independently be a benzene group, a naphthalene group, a phenanthrene group or an anthracene group.

[0194] In an embodiment, each of Formula 201 and Formula 202 may include at least one of the groups represented by Formula CY201 to Formula CY203.

[0195] In an embodiment, Formula 201 may include at least one of the groups represented by Formula CY201 to Formula CY203 and at least one of the groups represented by Formula CY204 to Formula CY217.

[0196] In an embodiment, in Formula 201, xa1 may be 1, R 201 may be a group represented by one of Formula CY201 to Formula CY203, xa2 may be 0, and R 202 may be a group represented by one of Formula CY204 to Formula CY207.

[0197] In an embodiment, each of Formula 201 and Formula 202 may not include a group represented by one of Formula CY201 to Formula CY203.

[0198] In an embodiment, each of Formula 201 and Formula 202 may not include a group represented by one of Formula CY201 to Formula CY203, and may include at least one of the groups represented by Formula CY204 to Formula CY217.

[0199] In an embodiment, each of Formula 201 and Formula 202 may not include a group represented by one of Formula CY201 to Formula CY217.

[0200] In an embodiment, the hole transport region may comprise one of Compounds HT1 to HT46, N1-phenyl-N4,N4-bis(4-(phenyl(m-tolyl)amino)phenyl)-N1-(m-tolyl)benzene-1,4-diamine (m-MTDATA), 1-N,1-N-bis[4-(diphenylamino)phenyl]-4-N,4-N-diphenylbenzene-1,4-diamine (TDATA), 4,4',4”-tris[2-naphthyl(phenyl)amino]triphenylamine (2-TNATA), N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB or NPD), β-NPB, N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), spiro-TPD, spiro-NPB, methylated-NPB, 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC), N,N,N',N'-tetra-(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD), 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), or a combination thereof.

[0201]

[0202]

[0203]

[0204]

[0205]

[0206] The thickness of the hole transport region may be about 50 angstroms to about For example, about to about When the hole transport region includes a hole injection layer, a hole transport layer, or a combination thereof, the thickness of the hole injection layer may be about to about For example, about to about And the thickness of the hole transport layer may be about to about For example, about to about When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, satisfactory hole transport characteristics can be obtained without a significant increase in the driving voltage.

[0207] The light-emission assisting layer can increase the light-emission efficiency by compensating for the optical resonance distance according to the wavelength of the light emitted from the light-emitting layer, and the electron blocking layer can block the leakage of electrons from the light-emitting layer to the hole transport region. Materials that can be included in the hole transport region can be included in the light-emission assisting layer and the electron blocking layer.

[0208] [p-dopant]

[0209] In addition to these materials, the hole transport region can further include a charge generation material for improving the conduction properties. The charge generation material can be uniformly or non-uniformly dispersed in the hole transport region (e.g., in the form of a single layer containing the charge generation material).

[0210] The charge generation material can be, for example, a p-dopant.

[0211] For example, the lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant can be about -3.5 electron volts (eV) or less than -3.5 eV.

[0212] In an embodiment, the p-dopant can include a quinone derivative, a compound containing a cyano group, a compound containing element EL1 and element EL2, or a combination thereof.

[0213] Examples of the quinone derivative are 7,7,8,8-tetracyanoquinodimethane (TCNQ), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (F4-TCNQ), etc.

[0214] Examples of the compound containing a cyano group are 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HAT-CN) and the compound represented by the following formula 221:

[0215]

[0216] <Formula 221>

[0217]

[0218] In formula 221,

[0219] R 221 to R 223 can each independently be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C60 a heterocyclic group, and

[0220] R 221 to R 223 at least one of which may each independently be a cyano group; -F; -Cl; -Br; -I; a C1-C alkyl group substituted with a cyano group, -F, -Cl, -Br, -I or any combination thereof; or a C3-C 20 alkyl group; or a C3-C carbon ring group or a C1-C 60 heterocyclic group. 60 In a compound containing element EL1 and element EL2, element EL1 may be a metal, a metalloid or a combination thereof, and element EL2 may be a non-metal, a metalloid or a combination thereof.

[0221] Examples of metals are alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); post-transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); and lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.).

[0222] Examples of metalloids are silicon (Si), antimony (Sb) and tellurium (Te).

[0223] Examples of non-metals are oxygen (O) and halogens (e.g., F, Cl, Br, I, etc.).

[0224] Examples of compounds containing element EL1 and element EL2 are metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides or metal iodides), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides or metalloid iodides), metal tellurides or combinations thereof.

[0225]

[0226] ​Examples of metal oxides are tungsten oxides (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxides (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxides (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), and rhenium oxides (e.g., ReO3, etc.).

[0227] Examples of metal halides are alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.

[0228] Examples of alkali metal halides are LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0229] Examples of alkaline earth metal halides are BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2.

[0230] Examples of transition metal halides are titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), tantalum halides (e.g., TaF3, TaCl3, TaBr3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2, ReI2, etc.), iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.) and gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.).

[0231] Examples of post-transition metal halides are zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.) and tin halides (e.g., SnI2, etc.).

[0232] Examples of lanthanide metal halides are YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3 and SmI3.

[0233] Examples of metalloid halides are antimony halides (e.g., SbCl5, etc.).

[0234] Examples of metal tellurides are alkali metal tellurides (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).

[0235] [Light-emitting layer in the intermediate layer 130]

[0236] When the light-emitting element 10 is a full-color light-emitting element, the light-emitting layer can be patterned into a red light-emitting layer, a green light-emitting layer, and / or a blue light-emitting layer according to sub-pixels. At least one of the light-emitting layers can contain the quantum dots described above. For example, the green light-emitting layer can be a quantum dot light-emitting layer containing quantum dots, and the blue light-emitting layer and the red light-emitting layer can each be an organic light-emitting layer containing an organic compound respectively.

[0237] In an embodiment, the light-emitting layer can have a structure in which at least two of the red light-emitting layer, the green light-emitting layer, or the blue light-emitting layer can be in contact with each other or can be separated from each other. At least one of the at least two light-emitting layers can be a quantum dot light-emitting layer containing quantum dots, and the other light-emitting layers can be organic light-emitting layers containing organic compounds. Such a change can be made.

[0238] [Electron transport region in the intermediate layer 130]

[0239] The electron transport region can have: i) a single-layer structure composed of a single layer of a single material, ii) a single-layer structure composed of a single layer of a variety of different materials, or iii) a multi-layer structure including multiple layers of different materials.

[0240] In addition, in addition to the materials described above, the electron transport region can further include a metal oxide layer.

[0241] For example, the electron transport region may include, for example, ZnO, TiO2, WO3, SnO2, In2O3, Nb2O5, Fe2O3, CeO2, SrTiO3, Zn2SnO4, BaSnO3, In2S3, ZnSiO, [6,6]-phenyl-C61-butyric acid methyl ester (PC60BM), [6,6]-phenyl-C71-butyric acid methyl ester (PC70BM), ZnMgO, AZO, GZO, IZO, Al-doped TiO2, Ga-doped TiO2, In-doped TiO2, Al-doped WO3, Ga-doped WO3, In-doped WO3, Al-doped SnO2, Ga-doped SnO2, In-doped SnO2, Mg-doped In2O3, Al-doped In2O3, Ga-doped In2O3, Mg-doped Nb2O5, Al-doped Nb2O5, Ga-doped Nb2O5, Mg-doped Fe2O3, Al-doped Fe2O3, Ga-doped Fe2O3, In-doped Fe2O3, Mg-doped CeO2, Al-doped CeO2, Ga-doped CeO2, In-doped CeO2, Mg-doped SrTiO3, Al-doped SrTiO3, Ga-doped SrTiO3, In-doped SrTiO3, Mg-doped Zn2SnO4, Al-doped Zn2SnO4, Ga-doped Zn2SnO4, In-doped Zn2SnO4, Mg-doped BaSnO3, Al-doped BaSnO3, Ga-doped BaSnO3, In-doped BaSnO3, Mg-doped In2S3, Al-doped In2S3, Ga-doped In2S3, In-doped In2S3, Mg-doped ZnSiO, Al-doped ZnSiO, Ga-doped ZnSiO, In-doped ZnSiO, or a combination thereof.

[0242] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or a combination thereof. The buffer layer, the hole blocking layer, the electron control layer, the electron transport layer, or the electron injection layer may each be a metal oxide layer, or at least one layer in any combination of the buffer layer, the hole blocking layer, the electron control layer, and the electron transport layer may be a metal oxide layer.

[0243] For example, the electron transport region may have an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, and the constituent layers of each structure are stacked in sequence from the light-emitting layer.

[0244] The electron transport region (e.g., the buffer layer, the hole blocking layer, the electron control layer, or the electron transport layer in the electron transport region) may contain the metal oxides described above.

[0245] The electron transport region (e.g., a buffer layer, a hole blocking layer, an electron control layer, or an electron transport layer in the electron transport region) may include an organic material. For example, the electron transport region may include a metal-free compound containing at least one π-deficient nitrogen-containing C1-C 60 carbocyclic group.

[0246] For example, the electron transport region may include a compound represented by Formula 601:

[0247] <Formula 601>

[0248] [Ar 601 xe11 -[(L 601 ) xe1 -R 601 xe21

[0249] wherein, in Formula 601,

[0250] Ar 601 and L 601 may each independently be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group,

[0251] xe11 may be 1, 2, or 3,

[0252] xe1 may be 0, 1, 2, 3, 4, or 5,

[0253] R 601 may be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group, an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 )、-C(=O)(Q 601 )、-S(=O)2(Q 601 ) or -P(=O)(Q 601 )(Q 602 ),

[0254] Q 601 to Q 603 may each be the same as described herein for Q1,

[0255] xe21 may be 1, 2, 3, 4, or 5, and​​

[0256] Ar 601 、L 601 and R 601 at least one of which may each independently be an unsubstituted or R 10a -substituted π-deficient nitrogen-containing C1-C 60 cyclic group.

[0257] For example, when xe11 in Formula 601 is 2 or greater than 2, two or more of the Ar 601 may be connected to each other via a single bond.

[0258] In an embodiment, Ar in Formula 601 601 may be a substituted or unsubstituted anthracene group.

[0259] In an embodiment, the electron transport region may comprise a compound represented by Formula 601-1:

[0260] <Formula 601-1>

[0261]

[0262] wherein, in Formula 601-1,

[0263] X 614 may be N or C(R 614 ), X 615 may be N or C(R 615 ), X 616 may be N or C(R 616 ), and at least one of X 614 to X 616 may be N,

[0264] L 611 to L 613 may each be the same as described herein for L 601 and,

[0265] xe611 to xe613 may each be the same as described herein for xe1,

[0266] R 611 to R 613 may each be the same as described herein for R 601 and,

[0267] R 614 to R 616 may each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C1-C 20 alkyl group, a C1-C 20An alkoxy group, an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group.

[0268] For example, in Formula 601 and Formula 601-1, xe1 and xe611 to xe613 can each independently be 0, 1, or 2.

[0269] The electron transport region may include one of Compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), tris(8-hydroxyquinoline)aluminum(III) (Alq3), bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum (BAlq), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), or a combination thereof:

[0270]

[0271]

[0272]

[0273] The thickness of the electron transport region may be about to about For example, about to about When the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or a combination thereof, the thickness of the buffer layer, the hole blocking layer, or the electron control layer may each independently be about to about For example, about to about And the thickness of the electron transport layer may be about to about For example, about to about When the thicknesses of the buffer layer, the hole blocking layer, the electron control layer, the electron transport layer, and / or the electron transport layer are within these ranges, satisfactory electron transport characteristics can be obtained without a significant increase in the driving voltage.

[0274] In addition to the materials described above, the electron transport region (e.g., the electron transport layer in the electron transport region) may further include a metal-containing material.

[0275] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or a combination thereof. The metal ion of the alkali metal complex may be a Li ion, a Na ion, a K ion, a Rb ion, or a Cs ion, and the metal ion of the alkaline earth metal complex may be a Be ion, a Mg ion, a Ca ion, a Sr ion, or a Ba ion. The ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth metal complex may include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or a combination thereof.

[0276] For example, the metal-containing material may include a Li complex. The Li complex may include, for example, Compound ET-D1(LiQ) or Compound ET-D2:

[0277]

[0278] The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer may be in direct contact with the second electrode 150.

[0279] The electron injection layer may have: i) a single-layer structure composed of a single layer of a single material, ii) a single-layer structure composed of a single layer of a plurality of different materials, or iii) a multi-layer structure including a plurality of layers containing different materials.

[0280] The electron injection layer may contain an alkali metal, an alkaline earth metal, a rare earth metal, a compound containing an alkali metal, a compound containing an alkaline earth metal, a compound containing a rare earth metal, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof.

[0281] The alkali metal may include Li, Na, K, Rb, Cs, or a combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or a combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or a combination thereof.

[0282] The compound containing an alkali metal, the compound containing an alkaline earth metal, and the compound containing a rare earth metal may be an oxide, a halide (e.g., fluoride, chloride, bromide, or iodide), or a telluride of the alkali metal, the alkaline earth metal, and the rare earth metal, or a combination thereof.

[0283] The compound containing an alkali metal may include: an alkali metal oxide, such as Li2O, Cs2O, or K2O; an alkali metal halide, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, or KI; or a combination thereof. The compound containing an alkaline earth metal may include an alkaline earth metal compound, such as BaO, SrO, CaO, Bax Sr 1-x O (where x is a real number satisfying the condition 0 < x < 1), Ba x Ca 1-x O (where x is a real number satisfying the condition 0 < x < 1), etc. Compounds containing rare earth metals may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the compound containing rare earth metals may include lanthanide metal tellurides. Examples of lanthanide metal tellurides are LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3.

[0284] Alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may contain i) one of the ions of alkali metals, alkaline earth metals, or rare earth metals, and ii) ligands bonded to the metal ions, such as hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or a combination thereof.

[0285] The electron injection layer may contain alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or a combination thereof as described above. In an embodiment, the electron injection layer may further contain an organic material (e.g., a compound represented by Formula 601).

[0286] In an embodiment, the electron injection layer may contain i) an alkali metal-containing compound (e.g., an alkali metal halide); or ii) a) an alkali metal-containing compound (e.g., an alkali metal halide), and b) an alkali metal, an alkaline earth metal, a rare earth metal, or a combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer, a RbI:Yb co-deposited layer, etc.

[0287] When the electron injection layer further contains an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, a compound containing an alkali metal, a compound containing an alkaline earth metal, a compound containing a rare earth metal, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof may be uniformly or non-uniformly dispersed in a matrix containing the organic material.

[0288] The thickness of the electron injection layer may be about to about And for example, about to about When the thickness of the electron injection layer is within the range described above, satisfactory electron injection characteristics can be obtained without a significant increase in the driving voltage.

[0289] [Second Electrode 150]

[0290] The second electrode 150 may be located on the intermediate layer 130 having the structure described above. The second electrode 150 may be a cathode as an electron injection electrode, and a metal, an alloy, a conductive compound, or a combination thereof each having a low work function may be used as the material for the second electrode 150.

[0291] The second electrode 150 may contain lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or a combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0292] The second electrode 150 may have a single-layer structure or a multi-layer structure including multiple layers.

[0293] [Cover Layer]

[0294] The first cover layer may be located outside the first electrode 110, and / or the second cover layer may be located outside the second electrode 150. In particular, the light-emitting element 10 may have a structure in which the first cover layer, the first electrode 110, the intermediate layer 130, and the second electrode 150 are stacked in a specified order in sequence, a structure in which the first electrode 110, the intermediate layer 130, the second electrode 150, and the second cover layer are stacked in a specified order in sequence, or a structure in which the first cover layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second cover layer are stacked in a specified order in sequence.

[0295] The light generated in the light-emitting layer of the intermediate layer 130 of the light-emitting element 10 can be led out toward the outside through the first electrode 110 (which is a semi-transmissive electrode or a transmissive electrode) and the first cover layer. The light generated in the light-emitting layer of the intermediate layer 130 of the light-emitting element 10 can be led out toward the outside through the second electrode 150 (which is a semi-transmissive electrode or a transmissive electrode) and the second cover layer.

[0296] The first cover layer and the second cover layer can increase the external light-emitting efficiency according to the principle of constructive interference. Accordingly, the light extraction efficiency of the light-emitting element 10 is increased, so that the light-emitting efficiency of the light-emitting element 10 can be improved.

[0297] Each of the first cover layer and the second cover layer can include a material having a refractive index of about 1.6 or greater than 1.6 (at 589 nm).

[0298] The first cover layer and the second cover layer can each independently be an organic cover layer including an organic material, an inorganic cover layer including an inorganic material, or an organic-inorganic composite cover layer including an organic material and an inorganic material.

[0299] At least one of the first cover layer and the second cover layer can each independently include a carbocyclic compound, a heterocyclic compound, a compound containing an amine group, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or a combination thereof. Optionally, the carbocyclic compound, the heterocyclic compound, and the compound containing an amine group can be substituted with a substituent containing O, N, S, Se, Si, F, Cl, Br, I, or a combination thereof. In an embodiment, at least one of the first cover layer and the second cover layer can each independently include a compound containing an amine group.

[0300] For example, at least one of the first cover layer and the second cover layer can each independently include a compound represented by Formula 201, a compound represented by Formula 202, or a combination thereof.

[0301] In an embodiment, at least one of the first cover layer and the second cover layer can each independently include one of Compound HT28 to Compound HT33, one of Compound CP1 to Compound CP6, β-NPB, or a combination thereof:

[0302]

[0303] [Electronic device]

[0304] The light-emitting element 10 can be included in various electronic devices. In an embodiment, the electronic device including the light-emitting element 10 can be a light-emitting device or a verification device.

[0305] In addition to the light-emitting element 10, an electronic device (e.g., a light-emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer may be disposed in at least one direction in which the light emitted from the light-emitting element 10 travels. For example, the light emitted from the light-emitting element 10 may be blue light or white light. The light-emitting element 10 may be understood by referring to the description provided herein. In an embodiment, the color conversion layer may include quantum dots. The quantum dots may be, for example, the quantum dots described herein.

[0306] The electronic device may include a first substrate. The first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions respectively corresponding to the sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions respectively corresponding to the sub-pixel regions.

[0307] The pixel defining film may be located between the sub-pixel regions to define each of the sub-pixel regions.

[0308] The color filter may further include a plurality of color filter regions and a light-shielding pattern located between the color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-shielding pattern located between the color conversion regions.

[0309] The plurality of color filter regions (or the plurality of color conversion regions) may include a first region emitting a first color light, a second region emitting a second color light, and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths from each other. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the plurality of color filter regions (or the plurality of color conversion regions) may include quantum dots. Specifically, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. Regarding the details of the quantum dots, reference may be made to the relevant description provided herein. The first region, the second region, and / or the third region may each include a scatterer.

[0310] In an embodiment, the light-emitting element 10 may emit a first light, the first region may absorb the first light to emit a 1-1 color light, the second region may absorb the first light to emit a 2-1 color light, and the third region may absorb the first light to emit a 3-1 color light. In this regard, the first-first color light, the second-first color light, and the third-first color light may have different maximum emission wavelengths. In particular, the first light may be blue light, the first-first color light may be red light, the second-first color light may be green light, and the third-first color light may be blue light.

[0311] In addition to the light-emitting element 10, the electronic device may further include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, and either the source electrode or the drain electrode may be electrically connected to one of the first electrode and the second electrode of the organic light-emitting element 10.

[0312] The thin-film transistor may further include a gate electrode, a gate insulating film, etc.

[0313] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, etc.

[0314] The electronic device may further include a sealing portion for sealing the light-emitting element 10. The sealing portion may be located between the color filter and / or the color conversion layer and the light-emitting element 10. The sealing portion allows the light from the light-emitting element 10 to be led out to the outside while preventing environmental air and moisture from penetrating into the light-emitting element 10. The sealing portion may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer including at least one layer of an organic layer and / or an inorganic layer. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0315] According to the use of the electronic device, in addition to the color filter and / or the color conversion layer, various functional layers may be additionally located on the sealing portion. Examples of the functional layers may include a touchscreen layer, a polarization layer, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer. The verification device may be, for example, a biometric verification device that verifies an individual by using biometric information of a living body (e.g., fingertips, pupils, etc.).

[0316] In addition to the organic light-emitting element 10, the verification device may further include a biometric information collector.

[0317] The electronic device may be applied to various displays, light sources, lighting devices, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical instruments (e.g., electronic thermometers, sphygmomanometers, blood glucose meters, pulse measurement devices, pulse wave measurement devices, electrocardiogram displays, ultrasonic diagnostic devices, or endoscope displays), fish finders, various measuring instruments, meters (e.g., meters for vehicles, aircraft, and ships), projectors, etc.

[0318] Figure 3 and Figure 4 description of]

[0319] Figure 3 is a cross-sectional view showing a light-emitting device according to an embodiment of the present disclosure.

[0320] Figure 3 ​The light-emitting device includes a substrate 100, a thin-film transistor (TFT), a light-emitting element, and a sealing portion 300 that seals the light-emitting element.

[0321] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be located on the substrate 100. The buffer layer 210 may prevent impurities from penetrating through the substrate 100 and may provide a flat surface on the substrate 100.

[0322] The TFT may be located on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0323] The active layer 220 may include an inorganic semiconductor (such as silicon or polysilicon), an organic semiconductor, or an oxide semiconductor, and may include a source region, a drain region, and a channel region.

[0324] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be located on the active layer 220, and the gate electrode 240 may be located on the gate insulating film 230.

[0325] An interlayer insulating film 250 may be located on the gate electrode 240. The interlayer insulating film 250 may be located between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270 to insulate them from each other.

[0326] The source electrode 260 and the drain electrode 270 may be located on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source region and the drain region of the active layer 220, and the source electrode 260 and the drain electrode 270 may be positioned to contact the exposed portions of the source region and the drain region of the active layer 220.

[0327] The TFT is electrically connected to the light-emitting element to drive the light-emitting element and is covered and protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting element is provided on the passivation layer 280. The light-emitting element may include a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0328] The first electrode 110 may be located on the passivation layer 280. The passivation layer 280 may be positioned to expose a part of the drain electrode 270, not completely cover the drain electrode 270, and the first electrode 110 may be positioned to connect to the exposed portion of the drain electrode 270.

[0329] A pixel defining layer 290 containing an insulating material may be located on the first electrode 110. The pixel defining layer 290 may expose a certain area of the first electrode 110 and may form the intermediate layer 130 in the exposed area of the first electrode 110. The pixel defining layer 290 may be a polyimide or polyacrylic acid organic film. AlthoughFigure 3 Although not shown, at least some of the layers of the intermediate layer 130 may extend beyond the upper portion of the pixel defining layer 290 to be positioned in the form of a common layer.

[0330] The second electrode 150 may be located on the intermediate layer 130, and a cover layer 170 may be additionally formed on the second electrode 150. The cover layer 170 may be formed to cover the second electrode 150.

[0331] The sealing portion 300 may be located on the cover layer 170. The sealing portion 300 may be located on the light-emitting element to protect the light-emitting element from the influence of moisture or oxygen. The sealing portion 300 may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or a combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyformaldehyde, polyarylate, hexamethyldisiloxane, an acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), an epoxy-based resin (e.g., aliphatic glycidyl ether (AGE), etc.), or a combination thereof; or a combination of an inorganic film and an organic film.

[0332] Figure 4 is a cross-sectional view showing a light-emitting device according to an embodiment of the present disclosure.

[0333] Figure 4 The light-emitting device of Figure 3 is the same as the light-emitting device of Figure 3 except that a light-shielding pattern 500 and a functional region 400 are additionally arranged on the sealing portion 300. The functional region 400 may be i) a color filter region, ii) a color conversion region, or iii) a combination of a color filter region and a color conversion region. In an embodiment, the light-emitting element included in

[0334] [Manufacturing Method]

[0335] Each layer included in the hole transport region, the light-emitting layer, and each layer included in the electron transport region may be formed in a certain region by using vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, laser-induced thermal imaging, or a combination thereof.

[0336] When forming the layers constituting the hole transport region, the light-emitting layer, and the layers constituting the electron transport region by vacuum deposition, depending on the material to be included in the layer to be formed and the structure of the layer to be formed, the deposition temperature may be about 100 °C to about 500 °C, the vacuum degree may be about 10 -8 Torr to about 10 -3 Torr, and about 0.01 Å per second ( to about deposited at a deposition rate of

[0337] [Definition of Terms]

[0338] As used herein, the term "C3-C 60 carbocyclic group" refers to a cyclic group consisting only of carbon as ring-forming atoms and having three to sixty carbon atoms, and as used herein, the term "C1-C 60 heterocyclic group" refers to a cyclic group having one to sixty carbon atoms and further having a heteroatom other than carbon as a ring-forming atom. C3-C 60 carbocyclic groups and C1-C 60 heterocyclic groups can each be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are fused to each other. For example, C1-C 60 heterocyclic groups have 3 to 61 ring-forming atoms.

[0339] As used herein, "cyclic group" can include C3-C 60 carbocyclic groups and C1-C 60 heterocyclic groups.

[0340] As used herein, the term "π-electron-rich C3-C 60 cyclic group" refers to a cyclic group having three to sixty carbon atoms and not containing *-N=*' as a ring-forming moiety, and as used herein, the term "π-electron-deficient nitrogen-containing C1-C 60 cyclic group" refers to a heterocyclic group having one to sixty carbon atoms and containing *-N=*' as a ring-forming moiety.

[0341] For example,

[0342] C3-C 60 carbocyclic groups can be i) group T1 or ii) a fused cyclic group in which two or more groups T1 are fused to each other (e.g., a cyclopentadienyl group, an adamantyl group, a norbornyl group, a phenyl group, a pentaphenyl group, a naphthyl group, a azulene group, an indacene group, an acenaphthylene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a benzophenanthrene group, a pyrene group, group, a perylene group, a pentacene group, a heptacene group, a tetracene group, a picene group, a hexacene group, a pentacenequinone group, a coronene group, an ovalene group, an indene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, an indenophenanthrene group or an indenanthracene group),

[0343] C1-C 60The heterocyclic group can be i) group T2, ii) a fused cyclic group in which two or more groups T2 are fused to each other, or iii) a fused cyclic group in which at least one group T2 and at least one group T1 are fused to each other (e.g., pyrrole group, thiophene group, furan group, indole group, benzindole group, naphthindole group, isoindole group, benzoisoindole group, naphthobenzoisoindole group, benzosilole group, benzothiophene group, benzofuran group, carbazole group, dibenzosilole group, dibenzothiophene group, dibenzofuran group, indeno[1,2,3-cd]carbazole group, indolo[3,2-b]carbazole group, benzofuro[2,3-b]carbazole group, benzothieno[2,3-b]carbazole group, benzosilolo[2,3-b]carbazole group, benzindolo[3,2-b]carbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthothiophene group, benzonaphthosilole group, benzofuro[2,3-b]dibenzofuran group, benzofuro[2,3-b]dibenzothiophene group, benzothieno[2,3-b]dibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzoisoxazole group, benzothiazole group, benzoisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthroline group, cinnoline group, phthalazine group, naphthyridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.),

[0344] π-electron-rich C3-C 60 The cyclic group can be i) group T1, ii) a fused cyclic group in which two or more groups T1 are fused to each other, iii) group T3, iv) a fused cyclic group in which two or more groups T3 are fused to each other, or v) a fused cyclic group in which at least one group T3 and at least one group T1 are fused to each other (e.g., C3-C 60carbocyclic group, 1H-pyrrole group, silole group, borole group, 2H-pyrrole group, 3H-pyrrole group, thiophene group, furan group, indole group, benzoindole group, naphthoindole group, isoindole group, benzoisoindole group, naphthoisoindole group, benzosilole group, benzothiophene group, benzofuran group, carbazole group, dibenzosilole group, dibenzothiophene group, dibenzofuran group, indeno-carbazole group, indolo-carbazole group, benzofuro-carbazole group, benzothieno-carbazole group, benzosilolo-carbazole group, benzoindolo-carbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthothiophene group, benzonaphthosilole group, benzofuro-dibenzofuran group, benzofuro-dibenzothiophene group, benzothieno-dibenzothiophene group, etc.)

[0345] π-deficient nitrogen-containing C1-C 60 The cyclic group can be i) group T4, ii) a fused cyclic group in which two or more than two groups T4 are fused to each other, iii) a fused cyclic group in which at least one group T4 and at least one group T1 are fused to each other, iv) a fused cyclic group in which at least one group T4 and at least one group T3 are fused to each other, or v) a fused cyclic group in which at least one group T4, at least one group T1 and at least one group T3 are fused to each other (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzisoxazole group, benzothiazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthroline group, cinnoline group, phthalazine group, naphthyridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.)

[0346] Group T1 can be a cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclobutene group, cyclopentene group, cyclopentadiene group, cyclohexene group, cyclohexadiene group, cycloheptene group, adamantyl group, norbornane (or bicyclo[2.2.1]heptane) group, norbornene group, bicyclo[1.1.1]pentyl group, bicyclo[2.1.1]hexyl group, bicyclo[2.2.2]octyl group or benzene group

[0347] The group T2 can be a furan group, a thiophene group, a 1H-pyrrole group, a silole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an aza-silole group, an aza-borole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a pyrrolidine group, an imidazolidine group, a dihydropyrrole group, a piperidine group, a tetrahydropyridine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydropyrazine group, a dihydropyrazine group, a tetrahydropyridazine group or a dihydropyridazine group,

[0348] The group T3 can be a furan group, a thiophene group, a 1H-pyrrole group, a silole group or a borole group, and

[0349] The group T4 can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an aza-silole group, an aza-borole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group or a tetrazine group.

[0350] As used herein, the terms "cyclic group, C3-C 60 carbocyclic group, C1-C 60 heterocyclic group, π-electron-rich C3-C 60 cyclic group or π-electron-deficient nitrogen-containing C1-C 60 cyclic group" refer to a group, monovalent group or polyvalent group (e.g., divalent group, trivalent group, tetravalent group, etc.) that is fused to any cyclic group, according to the structure of the formula in which the corresponding term is used. In an embodiment, a "benzene group" can be a benzo group, a phenyl group, a phenylene group, etc., which can be readily understood by one of ordinary skill in the art according to the structure of the formula including the "benzene group".

[0351] Monovalent C3-C 60 carbocyclic groups and monovalent C1-C 60 heterocyclic group examples can include C3-C 10 cycloalkyl groups, C1-C 10 heterocycloalkyl groups, C3-C 10 cycloalkenyl groups, C1-C 10 heterocycloalkenyl groups, C6-C 60 aryl groups, C1-C 60 heteroaryl groups, monovalent non-aromatic fused polycyclic groups and monovalent non-aromatic fused heteropolycyclic groups. Divalent C3-C 60Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups may include C3-C 10 Subcycloalkyl groups, C1-C 10 Subheterocycloalkyl groups, C3-C 10 Subcycloalkenyl groups, C1-C 10 Subheterocycloalkenyl groups, C6-C 60 Subaryl groups, C1-C 60 Subheteroaryl groups, divalent non-aromatic fused polycyclic groups, and divalent non-aromatic fused heteropolycyclic groups.

[0352] As used herein, the term "C1-C 60 alkyl group" refers to a straight-chain or branched-chain aliphatic hydrocarbon monovalent group having from one to sixty carbon atoms, and specific examples thereof are methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group, tert-butyl group, n-pentyl group, tert-pentyl group, neopentyl group, isopentyl group, sec-pentyl group, 3-pentyl group, sec-isopentyl group, n-hexyl group, isohexyl group, sec-hexyl group, tert-hexyl group, n-heptyl group, isoheptyl group, sec-heptyl group, tert-heptyl group, n-octyl group, isooctyl group, sec-octyl group, tert-octyl group, n-nonyl group, isononyl group, sec-nonyl group, tert-nonyl group, n-decyl group, isodecyl group, sec-decyl group, and tert-decyl group. As used herein, the term "C1-C 60 subalkyl group" refers to a divalent group having the same structure as the C1-C 60 alkyl group.

[0353] As used herein, the term "C2-C 60 alkenyl group" refers to a monovalent hydrocarbon group having at least one carbon-carbon double bond at the middle or end of the C2-C 60 alkyl group, and examples thereof are vinyl group, propenyl group, and butenyl group. As used herein, the term "C2-C 60 subalkenyl group" refers to a divalent group having the same structure as the C2-C 60 alkenyl group.

[0354] As used herein, the term "C2-C 60 alkynyl group" refers to a monovalent hydrocarbon group having at least one carbon-carbon triple bond at the middle or end of the C2-C 60 alkyl group, and examples thereof include ethynyl group, propynyl group, etc. As used herein, the term "C2-C 60 subalkynyl group" refers to a divalent group having the same structure as the C2-C 60 alkynyl group.

[0355] As used herein, the term "C1-C 60 alkoxy group" refers to a monovalent group represented by -OA 101 (where A 101 is a C1-C 60 alkyl group), and examples thereof include a methoxy group, an ethoxy group, and an isopropoxy group.

[0356] As used herein, the term "C3-C 10 cycloalkyl group" refers to a monovalent saturated hydrocarbon monocyclic group containing 3 to 10 carbon atoms. Examples of the C3-C 10 cycloalkyl group as used herein include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantyl group, a norbornyl (bicyclo[2.2.1]heptyl) group, a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, or a bicyclo[2.2.2]octyl group. As used herein, the term "C3-C 10 cycloalkylene group" refers to a divalent group having the same structure as the C3-C 10 cycloalkyl group.

[0357] As used herein, the term "C1-C 10 heterocycloalkyl group" refers to a monovalent cyclic group having 1 to 10 carbon atoms and further containing at least one heteroatom other than carbon atoms as a ring-forming atom, and specific examples thereof are a 1,2,3,4-oxadiazolyl group, a tetrahydrofuryl group, and a tetrahydrothienyl group. As used herein, the term "C1-C 10 heterocycloalkylene group" refers to a divalent group having the same structure as the C1-C 10 heterocycloalkyl group.

[0358] The term C3-C 10 cycloalkenyl group as used herein refers to a monovalent cyclic group having three to ten carbon atoms and at least one carbon-carbon double bond in its ring and having no aromaticity, and specific examples thereof are a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. As used herein, the term "C3-C 10 cycloalkenylene group" refers to a divalent group having the same structure as the C3-C 10 cycloalkenyl group.

[0359] As used herein, the term "C1-C 10 heterocycloalkenyl group" refers to a monovalent cyclic group having 1 to 10 carbon atoms and further containing at least one heteroatom other than carbon atoms as a ring-forming atom in its cyclic structure and having at least one carbon-carbon double bond. C1-C 10Examples of the heteroalkenyl group include 4,5-dihydro-1,2,3,4-oxatriazolyl group, 2,3-dihydrofuranyl group, and 2,3-dihydrothienyl group. As used herein, the term "C1-C 10 heteroalkenylene group" refers to a divalent group having the same structure as the C1-C 10 heteroalkenyl group.

[0360] As used herein, the term "C6-C 60 aryl group" refers to a monovalent group having a carbocyclic aromatic system containing 6 to 60 carbon atoms, and as used herein, the term "C6-C 60 arylene group" refers to a divalent group having a carbocyclic aromatic system containing 6 to 60 carbon atoms. Examples of the C6-C 60 aryl group are phenyl group, pentaphenylenyl group, naphthyl group, azulene group, indacenyl group, acenaphthylenyl group, phenalenyl group, phenanthrenyl group, anthracenyl group, fluoranthenyl group, benzophenanthrenyl group, pyrenyl group, group, perylenyl group, pentaphenyl group, heptaphenylenyl group, tetracenyl group, picenyl group, hexaphenyl group, pentaphenyl group, rubicenyl group, coronenyl group, and ovalenyl group. When the C6-C 60 aryl group and the C6-C 60 arylene group each contain two or more rings, the rings may be fused to each other.

[0361] As used herein, the term "C1-C 60 heteroaryl group" refers to a monovalent group having a heteroaromatic system containing 1 to 60 carbon atoms and further containing at least one heteroatom other than carbon atom as a ring-forming atom. As used herein, the term "C1-C 60 heteroarylene group" refers to a divalent group having a heteroaromatic system containing 1 to 60 carbon atoms and further containing at least one heteroatom other than carbon atom as a ring-forming atom. Examples of the C1-C 60 heteroaryl group are pyridyl group, pyrimidinyl group, pyrazinyl group, pyridazinyl group, triazinyl group, quinolinyl group, benzoquinolinyl group, isoquinolinyl group, benzoisoquinolinyl group, quinoxalinyl group, benzoquinoxalinyl group, quinazolinyl group, benzoquinazolinyl group, cinnolinyl group, phenanthrolinyl group, phthalazinyl group, and naphthyridinyl group. When the C1-C 60 heteroaryl group and the C1-C 60 heteroarylene group each contain two or more rings, the rings may be fused to each other.

[0362] As used herein, the term "monovalent non-aromatic fused polycyclic group" refers to a monovalent group having two or more fused rings and having only carbon atoms (e.g., having 8 to 60 carbon atoms) as ring-forming atoms, wherein the overall molecular structure is non-aromatic. Examples of the monovalent non-aromatic fused polycyclic group are an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenoanthracenyl group, and an indenoanthracenyl group. As used herein, the term "divalent non-aromatic fused polycyclic group" refers to a divalent group having the same structure as the monovalent non-aromatic fused polycyclic group described above.

[0363] As used herein, the term "monovalent non-aromatic fused heteropolycyclic group" refers to a monovalent group having two or more fused rings and having carbon atoms (e.g., having 1 to 60 carbon atoms) and at least one heteroatom as ring-forming atoms, wherein the overall molecular structure is non-aromatic. Examples of the monovalent non-aromatic fused heteropolycyclic group include a 9,9-dihydroacridinyl group and a 9H-xanthenyl group. As used herein, the term "divalent non-aromatic fused heteropolycyclic group" refers to a divalent group having the same structure as the monovalent non-aromatic fused heteropolycyclic group described above.

[0364] As used herein, the term "C6-C 60 aryloxy group" means -OA 102 (wherein A 102 is a C6-C 60 aryl group), and as used herein, the term "C6-C 60 arylthio group" means -SA 103 (wherein A 103 is a C6-C 60 aryl group).

[0365] As used herein, the term "C7-C 60 arylalkyl group" means -A 104 A 105 (wherein A 104 can be a C1-C 54 alkylene group, and A 105 can be a C6-C 59 aryl group), and as used herein, the term C2-C 60 heteroarylalkyl group" means -A 106 A 107 (wherein A 106 can be a C1-C 59 alkylene group, and A 107 can be a C1-C 59 heteroaryl group).

[0366] As used herein, the term "R 10a” means:

[0367] deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group or a nitro group;

[0368] each unsubstituted or substituted by deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, C3-C 60 a carbocyclic group, C1-C 60 a heterocyclic group, C6-C 60 an aryloxy group, C6-C 60 an arylthio group, C7-C 60 an arylalkyl group, C2-C 60 a heteroarylalkyl group, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O)2(Q 11 ), -P(=O)(Q 11 )(Q 12 ), or a combination thereof-substituted C1-C 60 an alkyl group, C2-C 60 an alkenyl group, C2-C 60 an alkynyl group or C1-C 60 an alkoxy group;

[0369] each unsubstituted or substituted by deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, C1-C 60 an alkyl group, C2-C 60 an alkenyl group, C2-C 60 an alkynyl group, C1-C 60 an alkoxy group, C3-C 60 a carbocyclic group, C1-C 60 a heterocyclic group, C6-C 60 an aryloxy group, C6-C 60 an arylthio group, C7-C 60 an arylalkyl group, C2-C 60 a heteroarylalkyl group, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q 22 ), -C(=O)(Q21 ), -S(=O)2Q 21 ), -P(=O)Q 21 )(Q 22 ), or a C3-C 60 carbocyclic group, a C1-C 60 heterocyclic group, a C6-C 60 aryloxy group, a C6-C 60 arylthio group, a C7-C 60 arylalkyl group, or a C2-C 60 heteroarylalkyl group; or

[0370] -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q 31 ), -S(=O)2(Q 31 ), or -P(=O)(Q 31 )(Q 32 ).

[0371] Q1 to Q3, Q 11 to Q 13 , Q 21 to Q 23 and Q 31 to Q 33 used herein may each independently be: hydrogen; deuterium; -F; -Cl; -Br; -I; a hydroxy group; a cyano group; a nitro group; a C1-C 60 alkyl group; a C2-C 60 alkenyl group; a C2-C 60 alkynyl group; a C1-C 60 alkoxy group; each unsubstituted or substituted by deuterium, -F, a cyano group, a C1-C 60 alkyl group, a C1-C 60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof, a C3-C 60 carbocyclic group or a C1-C 60 heterocyclic group; a C7-C 60 arylalkyl group; or a C2-C 60 heteroarylalkyl group.

[0372] As used herein, the term "heteroatom" refers to any atom other than carbon. Examples of heteroatoms are O, S, N, P, Si, B, Ge, Se, or combinations thereof.

[0373] As used herein, the term "third row transition metal" includes hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), and the like.

[0374] As used herein, the term "Ph" refers to a phenyl group, the term "Me" refers to a methyl group, the term "Et" refers to an ethyl group, the term "ter-Bu" or "Bu t " refers to a tert-butyl group, and the term "OMe" refers to a methoxy group as used herein.

[0375] As used herein, the term "biphenyl group" refers to "a phenyl group substituted with a phenyl group". In other words, a "biphenyl group" is a substituted phenyl group having a C6-C 60 aryl group as a substituent.

[0376] As used herein, the term "terphenyl group" refers to "a phenyl group substituted with a biphenyl group". In other words, a "terphenyl group" is a substituted phenyl group having a C6-C 60 aryl group substituted with a C6-C 60 aryl group as a substituent.

[0377] Unless otherwise defined, * and *' as used herein each refer to the binding site to an adjacent atom in the corresponding formula or moiety.

[0378] Hereinafter, the compositions and light-emitting elements according to the embodiments will be described in detail with reference to the following examples.

[0379] [Examples]

[0380] Preparation Example 1: Preparation of the Mixed Composition

[0381] The mixed composition is prepared by mixing the corresponding compounds according to the content ratios shown in Table 1.

[0382]

Table 1

[0383]

[0384] Preparation Example 2: Preparation of Membrane A and Membrane B

[0385] Ultrasonic cleaning is sequentially performed on a Si wafer (10 millimeters (mm) × 10 mm) using distilled water and isopropyl alcohol. Film A or Film B is formed by spin-coating the composition according to Table 2 on the Si wafer and forming a film having a thickness of 100 nm.

[0386] Evaluation Example 1

[0387] Regarding the film prepared according to Preparation Example 2, scanning electron microscope (SEM) images were measured using a JEOL-7800F under the condition of 15 kilovolts (kV), which are shown in FIGS. 5A and 5B, and the results of energy dispersive X-ray spectroscopy (EDS) analysis are shown in FIGS. 6A and 6B.

[0388]

Table 2

[0389] membrane composition figure Membrane A Composition 2 Figure 5A and Figure 6A Membrane B Composition 4 Figure 5B and Figure 6B

[0390] As can be confirmed from FIGS. 5A and 5B, different from Film B, since metal cations are dispersed between the metal oxides in Film A, in the process of manufacturing a light-emitting device accompanied by a heat treatment process, amorphous metal oxides are formed, and thus, in the SEM image, the packing density of the components in the film increases and the components are uniformly dispersed.

[0391] Furthermore, from FIGS. 6A and 6B, peaks of Al and Cl atoms are observed in the EDS map of Film A, and it is confirmed that metal cations are dispersed between the metal oxides.

[0392] Example 1

[0393] An indium tin oxide (ITO) glass substrate (50 millimeters (mm) × 50 mm and 15 ohms per square centimeter (Ω / cm 2 )) (which is an organic light-emitting device (OLED) glass (obtainable from Samsung-Corning) substrate) was ultrasonically treated successively with distilled water and isopropyl alcohol, and cleaned by exposure to ultraviolet light with ozone for about 30 minutes. Composition 4 was spin-coated on the ITO glass substrate to form a film with a thickness of 40 nm, and then baked at 100 °C for 30 minutes to form a metal oxide layer. A ZnSeTe quantum dot composition (solvent: octane, solid concentration: ZnSeTe 0.7 wt%) was spin-coated on the metal oxide layer to form a film with a thickness of 30 nm, and then baked at 120 °C for 10 minutes to form a light-emitting layer. Composition 1 was spin-coated on the light-emitting layer to form a film with a thickness of 40 nm, and then baked at a temperature of 100 °C for 30 minutes to form an electron transport layer. Al was deposited on the electron transport layer to a thickness of 100 nm to form a cathode, thereby completing the manufacture of an Electron Only Device (EOD). Then, heat treatment was further carried out at a temperature of 75 °C for 24 hours. The equipment used for deposition was a Suicelplus 200 evaporation machine from Sunic Systems.

[0394] Example 2, Example 3 and Comparative Example 1

[0395] The EOD was fabricated in the same manner as in Example 1, except that the hybrid composition of the electron transport layer was changed as shown in Table 3.

[0396]

Table 3

[0397]

[0398] Evaluation Example 2

[0399] The driving voltage of each of the EODs fabricated in Examples 1 to 3 and Comparative Example 1 was measured using a current-voltage meter (Kethley SMU 236) at a current density of 10 milliamperes per square centimeter (mA / cm 2 ). The results are shown in Table 4.

[0400]

Table 4

[0401] Drive Voltage (V) Example 1 2.9 Example 2 2.4 Example 3 2.2 Comparative Example 1 3.5

[0402] As shown in Table 4, it was found that the light-emitting elements of Examples 1 to 3 had improved driving voltages compared to the light-emitting element of Comparative Example 1.

[0403] Preparation Example 3: Preparation of the First Composition and the Second Composition

[0404] The first composition was prepared by mixing compounds according to the content ratios shown in Table 5, and the second composition was prepared by mixing compounds according to the content ratios shown in Table 6.

[0405]

Table 5

[0406]

[0407]

Table 6

[0408]

[0409] Example 4

[0410] The ITO glass substrate (50 mm × 50 mm and 15 Ω / cm was sequentially treated with distilled water and isopropyl alcohol 2)(It is an OLED glass (obtainable from Samsung-Corning) substrate) that is ultrasonically treated and cleaned by exposure to ultraviolet light with ozone for about 30 minutes. Composition 4 is spin-coated on the ITO glass substrate to form a film with a thickness of 40 nm, and then baked at 100 °C for 30 minutes to form a metal oxide layer. A ZnSeTe quantum dot composition (solvent: octane, solid concentration of ZnSeTe (0.7 wt%)) is spin-coated on the metal oxide layer to form a film with a thickness of 30 nm, and then baked at 120 °C for 10 minutes to form a light-emitting layer. Composition 1-1 is spin-coated on the light-emitting layer to form a film with a thickness of 40 nm, and then baked at a temperature of 100 °C for 30 minutes. After applying Composition 2-1 to Composition 1-1 and waiting for 60 seconds, the residual solvent is removed to form an electron transport layer.

[0411] Al is deposited on the electron transport layer to a thickness of 100 nm to form a cathode, thus completing the fabrication of the EOD. Then, heat treatment is further performed thereon at a temperature of 75 °C for 24 hours. The equipment used for deposition is a Suicelplus 200 evaporation coater from Sunic Systems Corporation.

[0412] Example 5 to Example 7 and Comparative Example 2 and Comparative Example 3

[0413] An EOD is fabricated in the same manner as in Example 4, but the mixed composition and / or the time for heat treatment at 75 °C are changed as shown in Table 7.

[0414]

Table 7

[0415]

[0416]

[0417] Evaluation Example 2

[0418] By using a current-voltmeter (Kethley SMU 236), the driving voltage of each of the EODs fabricated in Examples 4 to 7 and Comparative Examples 2 and 3 is measured at a current density of 10 milliamperes per square centimeter (mA / cm 2 ). The results are shown in Table 8.

[0419]

Table 8

[0420] Drive Voltage (V) Example 4 2.7 Example 5 2.8 Example 6 3.3 Example 7 3.4 Comparative Example 2 3.5 Comparative Example 3 4.2

[0421] As shown in Table 8, it was found that the EODs of Examples 4 to 7 had improved driving voltages compared to the EODs of Comparative Examples 2 and 3.

Claims

1. An electron transport layer comprising a hybrid composition, the hybrid composition comprising: a solvent; a metal oxide; and a metal halide compound.

2. The electron transport layer according to claim 1, wherein the metal oxide is represented by Formula 1: Formula 1 M 1 1-x M 2 x O y Among them, In Formula 1, M 1 and M 2 each independently comprises Zn, Mg, Co, Mn, Y, Al, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu, Ag, In, Nb, Fe, Ce, Sr, Ba, Si, Ga or a combination thereof, x is 0 ≤ x ≤ 1, and y is 0 < y ≤ 5.

3. The electron transport layer according to claim 2, wherein M 1 is Zn, and x is 0 ≤ x ≤ 0.

5.

4. The electron transport layer according to claim 1, wherein the average diameter (D50) of the metal oxide is 1 nanometer to 50 nanometers.

5. The electron transport layer according to claim 1, wherein the metal halide compound is represented by Formula 2: Formula 2 M 3 (X 1 ) n1 Among them, In Formula 2, M 3 is Al, Zn, In, Ga, Ti, Mg or Li, X 1 is F, Cl, Br, I, or a combination thereof, and n1 is an integer from 1 to 3.

6. The electron transport layer according to claim 5, wherein M in Formula 2 3 is Al.

7. The electron transport layer according to claim 1, wherein the solvent includes an alcohol, an ether, an ester, a ketone, an aliphatic hydrocarbon, an aromatic hydrocarbon, or a combination thereof, wherein the solvent is optionally substituted with a halogen.

8. The electron transport layer according to claim 1, wherein based on 100 parts by weight of the metal oxide, the amount of the metal halide compound in the hybrid composition is greater than or equal to 0.1 part by weight and less than or equal to 50 parts by weight.

9. The electron transport layer according to claim 1, wherein based on 100 parts by weight of the solvent, the amount of the metal oxide in the hybrid composition is greater than or equal to 0.1 part by weight and less than or equal to 50 parts by weight.

10. The electron transport layer according to claim 1, wherein the hybrid composition is amorphous, ionic, or both amorphous and ionic.

11. A method of manufacturing a light-emitting element, the method comprising: providing a light-emitting layer comprising quantum dots on a first electrode; providing the electron transport layer according to claim 1 on the light-emitting layer; and providing a second electrode on the electron transport layer to manufacture the light-emitting element.

12. The method according to claim 11, wherein the providing of the electron transport layer includes providing the hybrid composition on the light-emitting layer and removing the solvent.

13. The method according to claim 11, wherein the providing of the electron transport layer includes: providing a first composition comprising the metal oxide and the solvent on the light-emitting layer, providing a second composition comprising the metal halide compound and the solvent on the first composition, and removing the solvent.

14. The method according to claim 12, further comprising, after the providing of the second electrode, heat-treating the first electrode, the light-emitting layer, the electron transport layer, and the second electrode at 50 °C to 250 °C.

15. A light-emitting element, comprising: a first electrode; a second electrode facing the first electrode; a light-emitting layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the light-emitting layer and the second electrode, wherein the electron transport layer comprises a mixture of a metal oxide and a metal halide compound.

16. The light-emitting element according to claim 15, wherein the electron transport layer has a single-layer structure.

17. The light-emitting element according to claim 15, wherein the light-emitting layer contains quantum dots.

18. The light-emitting element according to claim 17, wherein The quantum dots include: II-VI group semiconductor compounds, III-V group semiconductor compounds, III-VI group semiconductor compounds, I-III-VI group semiconductor compounds, IV-VI group semiconductor compounds, group IV elements or compounds, or combinations thereof.

19. The light-emitting element according to claim 15, wherein the first electrode is an anode, the second electrode is a cathode, the light-emitting element further includes: a hole transport region disposed between the first electrode and the light-emitting layer and an electron transport region disposed between the light-emitting layer and the second electrode, wherein the electron transport region includes the electron transport layer.

20. An electronic device, comprising the light-emitting element according to any one of claims 15 to 19.

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