A silicon carbide wafer dissociation device based on the combination of acoustic cavitation and acoustic streaming

Abstract

The present invention relates to the field of silicon carbide wafer dissociation technology, specifically a silicon carbide wafer dissociation device based on acoustic cavitation and acoustic streaming. The device comprises a bottom plate, a bottom hole A is formed through the surface of the bottom plate, a container is fixed on the upper surface of the bottom plate, a bottom hole B is formed through the bottom wall of the container, a high-frequency ultrasonic vibrator A is fixedly installed in both the bottom hole A and the bottom hole B, a plurality of side holes are formed through the side wall of the container, a high-frequency ultrasonic vibrator B is fixedly installed in each side hole, a guide groove and a motor are also fixed on the upper surface of the bottom plate, a top plate is slidably installed in the guide groove, a top hole is formed through the head surface of the top plate, a piezoelectric gasket and a low-frequency, high-power ultrasonic vibrator are fixedly installed in the coarse section of the top hole. The device solves the problems of the existing silicon carbide wafer dissociation technology, such as slow dissociation speed, large bonding force after dissociation, poor surface quality after dissociation, and poor consistency and stability of the dissociation process, and is suitable for silicon carbide wafer dissociation.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon carbide wafer dissociation, and in particular to a silicon carbide wafer dissociation device based on the combination of acoustic cavitation and acoustic streaming. Background Art

[0002] Silicon carbide wafer dissociation is widely used in the field of integrated circuits and is an indispensable and important link in the chip manufacturing process. However, in actual applications, the existing silicon carbide wafer dissociation technology has the following problems due to the structural limitations of the dissociation device: First, in the existing silicon carbide wafer dissociation technology, the dissociation device can only perform single-frequency ultrasonic vibration, which leads to a slow dissociation speed, a large binding force after dissociation, and poor surface quality after dissociation. Second, in the existing silicon carbide wafer dissociation technology, the dissociation device cannot control the process parameters during the dissociation process, which leads to poor consistency and stability of the dissociation process. Based on this, it is necessary to invent a silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming to solve the problems of the existing silicon carbide wafer dissociation technology, such as slow dissociation speed, large binding force after dissociation, poor surface quality after dissociation, and poor consistency and stability of the dissociation process. Summary of the Invention

[0003] In order to solve the problems of slow dissociation speed, large binding force after dissociation, poor surface quality after dissociation, and poor consistency and stability of the dissociation process in the existing silicon carbide wafer dissociation technology, the present invention provides a silicon carbide wafer dissociation device based on the combination of acoustic cavitation and acoustic streaming.

[0004] The present invention is achieved by adopting the following technical solutions:

[0005] A silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming comprises a base plate;

[0006] A bottom hole A is provided on the surface of the bottom plate; a container with a cup-shaped structure and a cup mouth facing upward is fixed on the upper surface of the bottom plate; a bottom hole B is provided on the bottom wall of the container; a high-frequency ultrasonic vibrator A with a ring-shaped structure is fixedly installed in the bottom hole A and the bottom hole B, and the vibration surface of the high-frequency ultrasonic vibrator A extends upward beyond the inner bottom surface of the container; a vacuum suction cup is fixedly installed in the high-frequency ultrasonic vibrator A, and the disk surface of the vacuum suction cup extends upward beyond the vibration surface of the high-frequency ultrasonic vibrator A; a pressure-sensing plate with a ring-shaped structure is fixed to the vibration surface of the high-frequency ultrasonic vibrator A, and the pressure-sensing plate is sleeved on the upper end of the outer surface of the vacuum suction cup; a temperature sensor with a ring-shaped structure is fixed on the inner bottom surface of the container, and the temperature sensor is sleeved on the upper end of the outer surface of the high-frequency ultrasonic vibrator A; an electric heating plate with a ring-shaped structure is also fixed on the inner bottom surface of the container, and the electric heating plate is sleeved on the outside of the temperature sensor; a number of side holes are provided on the side wall of the container; a high-frequency ultrasonic vibrator B with a vibration face inward is fixedly installed in each side hole;

[0007] The upper surface of the bottom plate is also fixed with a vertical guide groove and an output shaft-oriented motor; the upper end of the guide groove is provided with an end wall and the lower end is provided with an opening; the motor is located in the guide groove; the output shaft of the motor is connected to a screw, and the upper end of the screw is rotatably supported on the upper end wall of the guide groove; a top plate with a racket-shaped structure is slidably assembled in the guide groove; a through screw hole is opened on the tail surface of the top plate, and the top plate is assembled on the side of the screw through the through screw hole; a top hole is opened on the head surface of the top plate, and the top hole is a stepped hole that is thick at the top and thin at the bottom; a piezoelectric gasket with a ring structure and a low-frequency, high-power ultrasonic vibrator with a downward vibration surface are fixedly assembled in the thick section of the top hole; the low-frequency, high-power ultrasonic vibrator is crimped to the upper end surface of the piezoelectric gasket, and the vibration surface of the low-frequency, high-power ultrasonic vibrator extends downward into the container.

[0008] Furthermore, the high-frequency ultrasonic vibrator A and the high-frequency ultrasonic vibrator B are both megahertz ultrasonic vibrators; and the low-frequency high-power ultrasonic vibrator is a kilohertz high-power ultrasonic vibrator.

[0009] Furthermore, a base is fixed to each of the four corners of the lower surface of the bottom plate; a blind screw hole is opened on the lower end surface of each base; and an anchor bolt is screwed into each blind screw hole.

[0010] Furthermore, a water inlet hole and a drainage hole are provided through the side wall of the container; the outer end opening of the water inlet hole is connected to a water inlet nozzle; the outer end opening of the drainage hole is connected to a drainage nozzle.

[0011] Furthermore, an assembly groove is provided on the inner side surface of the container; a water level sensor is fixedly installed in the assembly groove.

[0012] Furthermore, a boss with an annular structure is coaxially extended from the inner bottom surface of the container; the outer side surface of the temperature sensor contacts the inner side surface of the boss; and the inner side surface of the electric heating plate contacts the outer side surface of the boss.

[0013] Furthermore, the container has a hexagonal cup-shaped structure.

[0014] Compared to existing silicon carbide wafer dissociation technologies, the silicon carbide wafer dissociation device described in this invention, which utilizes a novel structure based on a combination of acoustic cavitation and acoustic streaming, offers the following advantages: First, the device utilizes dual-frequency ultrasonic composite vibrations (axial high-frequency ultrasonic vibration, radial high-frequency ultrasonic vibration, and axial low-frequency, high-power ultrasonic vibration). This utilizes the strong cavitation effect induced by the axial low-frequency, high-power ultrasonic vibration to reduce intercrystalline bonding and promote crack propagation. Furthermore, the high-frequency acoustic streaming and microcavitation effects induced by the axial high-frequency ultrasonic vibration enhance medium penetration and improve dissociation uniformity. Third, the high-intensity turbulence induced by the radial high-frequency ultrasonic vibration increases the cavitation intensity within the crack and promotes medium penetration into the crack. This effectively accelerates dissociation, reduces post-dissociation bonding, and improves post-dissociation surface quality, thereby achieving high-quality and rapid dissociation of silicon carbide wafers. Second, the device effectively ensures the consistency and stability of the dissociation process by regulating process parameters during the dissociation process (the distance between the low-frequency, high-power ultrasonic vibrator and the silicon carbide ingot, water temperature, and water level).

[0015] The present invention effectively solves the problems of slow dissociation speed, large binding force after dissociation, poor surface quality after dissociation, and poor consistency and stability of the dissociation process in the existing silicon carbide wafer dissociation technology, and is suitable for silicon carbide wafer dissociation. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a structural schematic diagram of the present invention.

[0017] Figure 2 yes Figure 1 sectional view of .

[0018] Figure 3 yes Figure 1 Partial structure diagram Figure 1 .

[0019] Figure 4 yes Figure 3 sectional view of .

[0020] Figure 5 yes Figure 3 Partial structure diagram Figure 1 .

[0021] Figure 6 yes Figure 5 sectional view of .

[0022] Figure 7 yes Figure 3 Partial structure diagram Figure 2 .

[0023] Figure 8 yes Figure 7 sectional view of .

[0024] Figure 9 yes Figure 7 Schematic diagram of part of the structure.

[0025] Figure 10 yes Figure 9 sectional view of .

[0026] Figure 11 yes Figure 1 Partial structure diagram Figure 2 .

[0027] Figure 12 yes Figure 11 sectional view of .

[0028] Figure 13 yes Figure 11 Schematic diagram of part of the structure.

[0029] Figure 14 yes Figure 13 sectional view of .

[0030] Figure 15 It is a structural schematic diagram of the high-frequency ultrasonic vibrator A and the vacuum suction cup of the present invention.

[0031] Figure 16 yes Figure 15 Schematic diagram from another angle.

[0032] Figure 17 It is a structural schematic diagram of the base in the present invention.

[0033] Figure 18 yes Figure 17 Schematic diagram from another angle.

[0034] In the figure: 1-bottom plate, 1.1-bottom hole A, 2-container, 2.1-bottom hole B, 2.2-side hole, 2.3-water inlet hole, 2.4-drainage hole, 2.5-assembly groove, 2.6-boss, 3-high-frequency ultrasonic vibrator A, 4-vacuum suction cup, 5-pressure sensing plate, 6-temperature sensor, 7-electric heating plate, 8-high-frequency ultrasonic vibrator B, 9-guide groove, 10-motor, 11-screw, 12-top plate, 12.1-through screw hole, 12.2-top hole, 13-piezoelectric gasket, 14-low-frequency high-power ultrasonic vibrator, 15-base, 15.1-blind screw hole, 16-anchor bolt, 17-water inlet nozzle, 18-drainage nozzle, 19-water level sensor, 20-bearing, 21-silicon carbide ingot. DETAILED DESCRIPTION

[0035] A silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming comprises a base plate 1;

[0036] A bottom hole A1.1 is formed through the surface of the bottom plate 1; a container 2 with a cup-shaped structure and a cup mouth facing upward is fixed on the upper surface of the bottom plate 1; a bottom hole B2.1 is formed through the bottom wall of the container 2; a high-frequency ultrasonic vibrator A3 with a ring structure is fixedly installed in the bottom hole A1.1 and the bottom hole B2.1, and the vibration surface of the high-frequency ultrasonic vibrator A3 is upward and exceeds the inner bottom surface of the container 2; a vacuum suction cup 4 is fixedly installed in the high-frequency ultrasonic vibrator A3, and the disk surface of the vacuum suction cup 4 is upward and exceeds the vibration surface of the high-frequency ultrasonic vibrator A3; the vibration of the high-frequency ultrasonic vibrator A3 A pressure-sensing plate 5 having an annular structure is fixed to the moving surface, and the pressure-sensing plate 5 is sleeved on the upper end of the outer surface of the vacuum suction cup 4. A temperature sensor 6 having an annular structure is fixed to the inner bottom surface of the container 2, and the temperature sensor 6 is sleeved on the upper end of the outer surface of the high-frequency ultrasonic vibrator A3. A ring-shaped electric heating plate 7 is also fixed to the inner bottom surface of the container 2, and the electric heating plate 7 is sleeved on the outer side of the temperature sensor 6. A plurality of side holes 2.2 are formed through the side wall of the container 2; each side hole 2.2 is fixedly mounted with a high-frequency ultrasonic vibrator B8 with its vibrating surface facing inward.

[0037] The upper surface of the bottom plate 1 is also fixed with a guide groove 9 arranged upright and a motor 10 with an output shaft pointing upward; the upper end of the guide groove 9 is provided with an end wall and the lower end is provided with an opening; the motor 10 is located in the guide groove 9; the output shaft of the motor 10 is connected to a screw 11, and the upper end of the screw 11 is rotatably supported on the upper end wall of the guide groove 9; a top plate 12 with a racket-shaped structure is slidably mounted in the guide groove 9; a through screw hole 12.1 is opened through the rear surface of the top plate 12, and the top plate 12 is screwed through the through screw hole 12.1 is assembled on the side of the screw 11; a top hole 12.2 is opened through the head surface of the top plate 12, and the top hole 12.2 is a stepped hole that is thick at the top and thin at the bottom; a piezoelectric gasket 13 with an annular structure and a low-frequency, high-power ultrasonic vibrator 14 with a downward vibration surface are fixedly assembled in the thick section of the top hole 12.2; the low-frequency, high-power ultrasonic vibrator 14 is crimped to the upper end surface of the piezoelectric gasket 13, and the vibration surface of the low-frequency, high-power ultrasonic vibrator 14 extends downward into the container 2.

[0038] During operation, water is placed in the container 2, the surface of the vacuum suction cup 4 adsorbs the silicon carbide crystal ingot 21, the high-frequency ultrasonic vibrator A3, each high-frequency ultrasonic vibrator B8, and the low-frequency high-power ultrasonic vibrator 14 are all connected to the ultrasonic generator, and the pressure sensing sheet 5, temperature sensor 6, electric heating sheet 7, motor 10, and piezoelectric gasket 13 are all connected to the host computer.

[0039] The specific working process is as follows: First, the upper computer controls the motor 10, which drives the screw 11 to rotate. The screw 11 drives the top plate 12 to rise and fall along the guide groove 9. The top plate 12 drives the piezoelectric gasket 13 and the low-frequency, high-power ultrasonic vibrator 14 to rise and fall, thereby preliminarily controlling the distance between the low-frequency, high-power ultrasonic vibrator 14 and the silicon carbide ingot 21. Then, the ultrasonic generator is started, which converts the mains power into an ultrasonic frequency alternating current signal and transmits the ultrasonic frequency alternating current signal to the high-frequency ultrasonic vibrator A3, each high-frequency ultrasonic vibrator B8, and the low-frequency, high-power ultrasonic vibrator 14. The high-frequency ultrasonic vibrator A3 converts the ultrasonic frequency alternating current signal into axial high-frequency ultrasonic vibrations, each high-frequency ultrasonic vibrator B8 converts the ultrasonic frequency alternating current signal into radial high-frequency ultrasonic vibrations, and the low-frequency, high-power ultrasonic vibrator 14 converts the ultrasonic frequency alternating current signal into axial low-frequency, high-power ultrasonic vibrations. Axial low-frequency, high-power ultrasonic vibrations induce strong cavitation in the water, while axial high-frequency ultrasonic vibrations induce high-frequency acoustic streaming and microcavitation. Radial high-frequency ultrasonic vibrations induce high-intensity turbulence in the water. Through the synergistic effects of strong cavitation, high-frequency acoustic streaming, microcavitation, and high-intensity turbulence, the silicon carbide ingot 21 is dissociated into silicon carbide wafers, thus achieving silicon carbide wafer dissociation.

[0040] During the above process, the pressure sensing sheet 5 monitors the dynamic stress changes during the dissociation process in real time and sends the monitoring results to the host computer in real time. The host computer adjusts the piezoelectric gasket 13 in real time based on the dynamic stress changes during the dissociation process, causing the piezoelectric gasket 13 to expand or contract, thereby accurately adjusting the distance between the low-frequency, high-power ultrasonic vibrator 14 and the silicon carbide ingot 21. The temperature sensor 6 monitors the water temperature in real time and sends the monitoring results to the host computer in real time. When the water temperature is too low, the host computer adjusts the electric heating sheet 7 in real time to raise the water temperature.

[0041] The high-frequency ultrasonic vibrator A3 and the high-frequency ultrasonic vibrator B8 are both megahertz ultrasonic vibrators; the low-frequency high-power ultrasonic vibrator 14 is a kilohertz high-power ultrasonic vibrator.

[0042] A base 15 is fixed to each of the four corners of the lower surface of the base plate 1. The lower end surface of each base 15 is provided with a blind screw hole 15.1. Each blind screw hole 15.1 is screwed with an anchor bolt 16. During operation, the position of the base plate 1 can be adjusted by screwing the anchor bolt 16.

[0043] The sidewall of container 2 is also provided with a water inlet hole 2.3 and a water drain hole 2.4. The outer end of water inlet hole 2.3 is connected to a water inlet nozzle 17, while the outer end of water drain hole 2.4 is connected to a water drain nozzle 18. During operation, water circulates through water inlet nozzle 17 and drain nozzle 18. If the water temperature is too high, this water circulation can reduce the temperature.

[0044] The inner side of the container 2 is provided with a mounting groove 2.5; a water level sensor 19 is fixedly mounted in the mounting groove 2.5. During operation, the water level sensor 19 monitors the water level in real time. If the water level is too low or too high, the water level can be raised or lowered by adjusting the water intake and discharge.

[0045] An annular boss 2.6 extends coaxially from the inner bottom surface of the container 2. The outer side of the temperature sensor 6 contacts the inner side of the boss 2.6, while the inner side of the electric heating plate 7 contacts the outer side of the boss 2.6. During operation, the boss 2.6 isolates the temperature sensor 6 from the electric heating plate 7.

[0046] The container 2 is a hexagonal cup-shaped structure. During operation, this design can avoid the formation of standing waves during the dissociation process, thereby ensuring the uniformity of dissociation.

[0047] During specific implementation, the bottom plate 1 has a rectangular structure; the aperture of the bottom hole B2.1 is smaller than the aperture of the bottom hole A1.1; the number of side holes 2.2 is six, and the six side holes 2.2 are equidistantly distributed along the circumferential direction; the number of high-frequency ultrasonic vibrators B8 is six, and the six high-frequency ultrasonic vibrators B8 are fixedly assembled in the six side holes 2.2 one by one; the upper end of the screw 11 is rotatably supported on the upper end wall of the guide groove 9 through the bearing 20.

[0048] Although specific embodiments of the present invention have been described above, those skilled in the art will appreciate that these are merely illustrative and that the scope of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, and such changes and modifications are intended to fall within the scope of the present invention.

Claims

1. A silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming, characterized by: including a bottom plate (1); A bottom hole A (1.1) is provided on the surface of the bottom plate (1); a container (2) having a cup-shaped structure and a cup opening facing upward is fixed on the upper surface of the bottom plate (1); a bottom hole B (2.1) is provided on the bottom wall of the container (2); a high-frequency ultrasonic vibrator A (3) having a ring-shaped structure is fixedly installed in the bottom hole A (1.1) and the bottom hole B (2.1), and the vibration surface of the high-frequency ultrasonic vibrator A (3) is upwardly extended beyond the inner bottom surface of the container (2); a vacuum suction cup (4) is fixedly installed in the high-frequency ultrasonic vibrator A (3), and the disk surface of the vacuum suction cup (4) is upwardly extended beyond the vibration surface of the high-frequency ultrasonic vibrator A (3); the high-frequency ultrasonic vibrator A (3) is fixedly installed in the high-frequency ultrasonic vibrator A (3), and the disk surface of the vacuum suction cup (4) is upwardly extended beyond the vibration surface of the high-frequency ultrasonic vibrator A (3); A pressure sensing sheet (5) having an annular structure is fixed to the vibration surface, and the pressure sensing sheet (5) is sleeved on the upper end of the outer surface of the vacuum suction cup (4); a temperature sensor (6) having an annular structure is fixed to the inner bottom surface of the container (2), and the temperature sensor (6) is sleeved on the upper end of the outer surface of the high-frequency ultrasonic vibrator A (3); an electric heating sheet (7) having an annular structure is also fixed to the inner bottom surface of the container (2), and the electric heating sheet (7) is sleeved on the outer side of the temperature sensor (6); a plurality of side holes (2.2) are opened through the side wall of the container (2); a high-frequency ultrasonic vibrator B (8) with the vibration surface facing inward is fixedly assembled in each side hole (2.2); The upper surface of the bottom plate (1) is also fixed with a guide groove (9) arranged upright and an output shaft-oriented motor (10); the upper end of the guide groove (9) is provided with an end wall and the lower end is provided with an opening; the motor (10) is located in the guide groove (9); the output shaft of the motor (10) is connected to a screw rod (11), and the upper end of the screw rod (11) is rotatably supported on the upper end wall of the guide groove (9); a top plate (12) with a racket-shaped structure is slidably assembled in the guide groove (9); a through screw hole (12.1) is opened through the tail surface of the top plate (12), and the top plate (12) is provided with a through screw hole (12.1) through the tail surface of the top plate (12). A through screw hole (12.1) is assembled on the side of the screw rod (11); a top hole (12.2) is formed through the head surface of the top plate (12), and the top hole (12.2) is a stepped hole with a thickness of the top and a thickness of the bottom; a piezoelectric gasket (13) with an annular structure and a low-frequency, high-power ultrasonic vibrator (14) with a downward vibration surface are fixedly assembled in the thick section of the top hole (12.2); the low-frequency, high-power ultrasonic vibrator (14) is crimped to the upper end surface of the piezoelectric gasket (13), and the vibration surface of the low-frequency, high-power ultrasonic vibrator (14) extends downward into the container (2); The high-frequency ultrasonic vibrator A (3) and the high-frequency ultrasonic vibrator B (8) are both megahertz ultrasonic vibrators; the low-frequency high-power ultrasonic vibrator (14) is a kilohertz high-power ultrasonic vibrator; The pressure sensing sheet (5), the temperature sensor (6), the electric heating sheet (7), the motor (10), and the piezoelectric gasket (13) are all connected to the host computer.

2. The silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming according to claim 1, characterized in that: A base (15) is fixed to each of the four corners of the lower surface of the base plate (1); a blind screw hole (15.1) is opened on the lower end surface of each base (15); and an anchor bolt (16) is screwed into each blind screw hole (15.1).

3. The silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming according to claim 2, characterized in that: The side wall of the container (2) is also provided with a water inlet hole (2.3) and a drainage hole (2.4); the outer end opening of the water inlet hole (2.3) is connected to a water inlet nozzle (17); and the outer end opening of the drainage hole (2.4) is connected to a drainage nozzle (18).

4. The silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming according to claim 3, characterized in that: An assembly groove (2.5) is provided on the inner side surface of the container (2); a water level sensor (19) is fixedly mounted in the assembly groove (2.5).

5. The silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming according to claim 4, characterized in that: A boss (2.6) in an annular structure is coaxially extended from the inner bottom surface of the container (2); the outer side surface of the temperature sensor (6) contacts the inner side surface of the boss (2.6); and the inner side surface of the electric heating plate (7) contacts the outer side surface of the boss (2.6).

6. The silicon carbide wafer dissociation device based on a combination of acoustic cavitation and acoustic streaming according to claim 5, characterized in that: The container (2) is a hexagonal cup-shaped structure.

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