Junction temperature calibration method and device of gallium nitride transistor and medium

Abstract

The invention discloses a junction temperature calibration method and device of a gallium nitride transistor and a medium, and relates to the technical field of semiconductor device testing. The junction temperature calibration method of the gallium nitride transistor comprises the following steps: acquiring a junction temperature distribution curve of the gallium nitride transistor; according to the junction temperature distribution curve, determining a junction temperature calibration model and a position with the highest junction temperature in the junction temperature distribution curve; obtaining the thermosensitive junction temperature of a thermosensitive physical region in the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position with the highest junction temperature; and determining the calibration junction temperature of the gallium nitride transistor according to the thermosensitive junction temperature, the relative distance and a junction temperature calibration model. According to the technical scheme of the invention, the thermal junction temperature of the thermal physical region is calibrated through the junction temperature calibration model, so that the calibrated junction temperature of the gallium nitride transistor can be determined, and the accuracy of the junction temperature measurement of the gallium nitride transistor is improved.

Description

Technical Field

[0001] The embodiments of the present invention relate to the technical field of semiconductor device testing, and in particular, to a method, device, and medium for calibrating the junction temperature of a gallium nitride transistor. Background Art

[0002] Gallium nitride high electron mobility transistors (HEMTs) are widely used in power electronics and radio frequency fields due to their excellent high power density, high frequency performance, and high temperature stability. To ensure the reliability and safety of devices operating at high temperatures and high powers, it is necessary to accurately measure the maximum junction temperature of gallium nitride HEMTs.

[0003] In the prior art, the junction temperature of a gallium nitride transistor is usually measured by a thermosensitive electrical parameter measurement method. This method measures the electrical parameters related to the junction temperature and calculates the junction temperature of the gallium nitride transistor based on the pre-established calibration relationship between the electrical parameters and the junction temperature. This method has the advantages of non-destructiveness, fast measurement speed, and on-line monitoring, and is widely used in the temperature management of gallium nitride transistors.

[0004] However, the temperature distribution inside the gallium nitride transistor is not uniform. The highest junction temperature point of the gallium nitride transistor is usually located under the gate, while the thermosensitive physical region corresponding to the thermosensitive electrical parameter does not coincide with this highest junction temperature point, resulting in a lower measurement result of the thermosensitive electrical parameter measurement method and being unable to accurately reflect the highest junction temperature of the gallium nitride transistor, thereby affecting the effectiveness of the thermal management of the gallium nitride transistor. This measurement error limits the application of the thermosensitive electrical parameter method in high-precision junction temperature monitoring. Summary of the Invention

[0005] The present invention provides a method, device, and medium for calibrating the junction temperature of a gallium nitride transistor, which improves the accuracy of measuring the junction temperature of the gallium nitride transistor by calibrating the thermosensitive junction temperature of the thermosensitive physical region.

[0006] The first aspect of the present invention provides a method for calibrating the junction temperature of a gallium nitride transistor, and the method for calibrating the junction temperature of a gallium nitride transistor includes:

[0007] Obtain the junction temperature distribution curve of the gallium nitride transistor;

[0008] According to the junction temperature distribution curve, determine the junction temperature calibration model and the position with the highest junction temperature in the junction temperature distribution curve;

[0009] Obtain the thermosensitive junction temperature of the thermosensitive physical region in the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position of the highest junction temperature;

[0010] Determine the calibrated junction temperature of the gallium nitride transistor according to the thermal-sensitive junction temperature, the relative distance, and the junction temperature calibration model.

[0011] Optionally, obtaining the junction temperature distribution curve of the gallium nitride transistor includes:

[0012] Obtain the reflectivity at each position on the surface of the gallium nitride transistor;

[0013] Determine the junction temperature at each position on the surface of the gallium nitride transistor according to the reflectivity at each position on the surface of the gallium nitride transistor;

[0014] Determine the junction temperature distribution map of the gallium nitride transistor according to the junction temperature at each position of the gallium nitride transistor;

[0015] Perform coordinate transformation on the junction temperature distribution map of the gallium nitride transistor to obtain the junction temperature distribution curve of the gallium nitride transistor.

[0016] Optionally, determining the junction temperature at each position on the surface of the gallium nitride transistor according to the reflectivity at each position on the surface of the gallium nitride transistor includes:

[0017] Obtain the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor;

[0018] Determine the junction temperature at each position on the surface of the gallium nitride transistor according to the mapping relationship and the reflectivity at each position on the surface of the gallium nitride transistor.

[0019] Optionally, obtaining the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor includes:

[0020] Place the gallium nitride transistor on a reflectivity test platform; a temperature adjustment module is provided on the reflectivity test platform;

[0021] Control the temperature adjustment module to adjust the test junction temperature of the gallium nitride transistor, and obtain the surface reflectivity of the gallium nitride transistor at different test junction temperatures;

[0022] Determine the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor according to each test junction temperature and the surface reflectivity at each test junction temperature.

[0023] Optionally, determining the junction temperature calibration model according to the junction temperature distribution curve includes:

[0024] Determine the position with the highest junction temperature in the junction temperature distribution curve as the first position, and determine other positions in the junction temperature distribution curve as the second positions;

[0025] Determine the normalized junction temperature of the first position as 1;

[0026] Determine the normalized junction temperature at each of the second positions according to the ratio of the junction temperature at each of the second positions to the junction temperature at the first position in the junction temperature distribution curve;

[0027] Determine the normalized distance at each position on the surface of the gallium nitride transistor according to the relative distance between each of the second positions and the first position;

[0028] Determine the normalized junction temperature distribution curve of the gallium nitride transistor according to the normalized distance and the normalized junction temperature at each position, and determine the normalized junction temperature distribution curve as the junction temperature calibration model.

[0029] Optionally, determining the calibrated junction temperature of the gallium nitride transistor according to the thermosensitive junction temperature, the relative distance, and the junction temperature calibration model includes:

[0030] Determine the normalized junction temperature of the thermosensitive physical region according to the relative distance and the junction temperature calibration model;

[0031] Determine the calibrated junction temperature of the gallium nitride transistor according to the thermosensitive junction temperature and the normalized junction temperature of the thermosensitive physical region based on a first calculation formula; the first calculation formula is:

[0032]

[0033] wherein, T max is the calibrated junction temperature, T measured is the thermosensitive junction temperature, and T norm is the normalized junction temperature of the thermosensitive physical region.

[0034] Optionally, obtaining the reflectivity at each position on the surface of the gallium nitride transistor includes:

[0035] Place the gallium nitride transistor on a reflectivity test platform; a temperature adjustment module is arranged on the reflectivity test platform;

[0036] Provide a power pulse to the source or drain of the gallium nitride transistor;

[0037] Control the temperature adjustment module to heat the gallium nitride transistor to a preset time with a preset scattering power;

[0038] After reaching the preset time, obtain the reflectivity at each position on the surface of the gallium nitride transistor based on a reflectivity acquisition module.

[0039] Optionally, the voltage value of the power pulse is 2.4V, the current value of the power pulse is 1.2A, and the pulse width of the power pulse is 0.5s;

[0040] The preset heat dissipation power is 60W.

[0041] A second aspect of the present invention provides a junction temperature calibration device for a gallium nitride transistor. The junction temperature calibration device for a gallium nitride transistor includes:

[0042] A junction temperature distribution curve acquisition module, configured to acquire the junction temperature distribution curve of the gallium nitride transistor;

[0043] A junction temperature calibration model determination module, configured to determine a junction temperature calibration model and the position with the highest junction temperature in the junction temperature distribution curve according to the junction temperature distribution curve;

[0044] A thermosensitive junction temperature acquisition module, configured to acquire the thermosensitive junction temperature of the thermosensitive physical region in the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position of the highest junction temperature;

[0045] A calibrated junction temperature determination module, configured to determine the calibrated junction temperature of the gallium nitride transistor according to the thermosensitive junction temperature, the relative distance, and the junction temperature calibration model.

[0046] A third aspect of the present invention provides a computer-readable storage medium, in which computer-executable instructions are stored. When the computer-executable instructions are executed by a processor, they are used to implement the junction temperature calibration method for a gallium nitride transistor as described above.

[0047] According to the technical solution of the present invention, by acquiring the junction temperature distribution curve of the gallium nitride transistor, the position with the highest junction temperature in the gallium nitride transistor can be determined, which is convenient for analyzing the relationship between the thermosensitive physical region and the position of the highest junction temperature of the gallium nitride transistor. At the same time, according to the junction temperature distribution curve, a junction temperature calibration model can be determined, which is convenient for calibrating and calculating the thermosensitive junction temperature, thereby improving the efficiency of calibrating the thermosensitive junction temperature. By acquiring the thermosensitive junction temperature of the thermosensitive physical region in the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position of the highest junction temperature, and combining with the junction temperature calibration model, the relationship between the thermosensitive junction temperature of the thermosensitive physical region and the junction temperature corresponding to the position of the highest junction temperature can be determined. According to the determined relationship between the junction temperatures, the thermosensitive junction temperature can be calibrated, thereby the calibrated junction temperature of the gallium nitride transistor can be determined. By calibrating the thermosensitive junction temperature, the measurement error caused by the uneven internal temperature distribution of the gallium nitride transistor in the thermosensitive electrical parameter measurement method is effectively corrected, and the accuracy of the junction temperature measurement of the gallium nitride transistor is improved.

[0048] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0050] Figure 1 It is a schematic flowchart of a method for calibrating the junction temperature of a gallium nitride transistor provided in the first embodiment of the present invention;

[0051] Figure 2 It is a schematic structural diagram of a gallium nitride transistor provided in the first embodiment of the present invention;

[0052] Figure 3 It is a schematic structural diagram of a junction temperature distribution curve provided in the first embodiment of the present invention;

[0053] Figure 4 It is a schematic flowchart of a method for calibrating the junction temperature of a gallium nitride transistor provided in the second embodiment of the present invention;

[0054] Figure 5 It is a schematic structural diagram of a junction temperature distribution map provided in the second embodiment of the present invention;

[0055] Figure 6 It is a schematic flowchart of a method for calibrating the junction temperature of a gallium nitride transistor provided in the third embodiment of the present invention;

[0056] Figure 7 It is a schematic structural diagram of a device for calibrating the junction temperature of a gallium nitride transistor provided in the fourth embodiment of the present invention;

[0057] Figure 8 It is a schematic structural diagram of a controller of a system for calibrating the junction temperature of a gallium nitride transistor provided in the fifth embodiment of the present invention. Detailed implementation manners

[0058] In order to enable those skilled in the art to better understand the solution of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0059] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of the present invention are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0060] Embodiment 1

[0061] Figure 1 FIG. is a schematic flowchart of a method for calibrating the junction temperature of a gallium nitride transistor provided in Embodiment 1 of the present invention. This embodiment can be used to calibrate the thermal junction temperature of a thermosensitive physical region. This method can be executed by a junction temperature calibration device of a gallium nitride transistor. This device can be implemented in a software and / or hardware manner and is generally integrated in a controller of a junction temperature calibration system of a gallium nitride transistor. Correspondingly, as Figure 1 shown, the method for measuring and calibrating the junction temperature of the gallium nitride transistor may include:

[0062] S101. Obtain the junction temperature distribution curve of the gallium nitride transistor.

[0063] Among them, the junction temperature of the gallium nitride transistor can specifically be understood as the temperature of the key working region inside the gallium nitride transistor, such as the temperature of the AlGaN / GaN heterojunction or the channel region under the gate. Exemplarily, Figure 2 FIG. is a schematic structural diagram of a gallium nitride transistor provided in Embodiment 1 of the present invention. As Figure 2As shown, the gallium nitride transistor may include a substrate 1, and a GaN layer 2, an AlGaN layer 3, and a passivation layer 4 that are sequentially stacked on one side of the substrate 1. The source electrode 5 and the drain electrode 6 of the gallium nitride transistor are both disposed on the surface of the GaN layer 2 facing away from the substrate 1, and the gate electrode 7 of the gallium nitride transistor is disposed on the surface of the passivation layer 4 facing away from the substrate 1. It can be understood that the AlGaN layer 3 has a relatively large bandgap, while the GaN layer 2 has a relatively small bandgap and high carrier mobility. When the AlGaN layer 3 and the GaN layer 2 are stacked, the GaN layer 2 provides a channel with high carrier mobility. At the same time, the relatively large bandgap of the AlGaN layer 3 helps to form a stable energy level structure, i.e., an AlGaN / GaN heterojunction, between the AlGaN layer 3 and the GaN layer 2. This energy level structure can prevent the scattering of carriers in the conductive channel of the gallium nitride transistor, thereby improving the carrier transport efficiency and current density of the gallium nitride transistor. It can also be understood that by applying a voltage to the gate electrode 7 and reaching the threshold voltage of the gallium nitride transistor, a current channel can be formed in the channel region between the source electrode 5 and the drain electrode 6, enabling carriers to flow between the source electrode 5 and the drain electrode 6, thereby generating a current and turning on the gallium nitride transistor; when the voltage applied to the gate electrode 7 does not meet the threshold voltage condition of the gallium nitride transistor, no current channel can be formed between the source electrode 5 and the drain electrode 6, so that the gallium nitride transistor is in an off state. In addition, the passivation layer 4 can form electrical isolation between the conductive channel and the gate electrode 7, thereby avoiding current leakage and interference.

[0064] Specifically, to solve the technical problem of the deviation between the thermosensitive physical region measured by the thermosensitive electrical parameter measurement method and the highest junction temperature point of the gallium nitride transistor, by obtaining the junction temperature distribution curve of the gallium nitride transistor, which reflects the trend of the junction temperature change of the gallium nitride transistor along the channel extension direction, i.e., from the source electrode to the drain electrode of the gallium nitride transistor. Exemplarily, the junction temperature distribution curve of the gallium nitride transistor can be obtained by methods such as the thermal reflection measurement method or the infrared thermal imaging method. According to this junction temperature distribution curve, the position with the highest junction temperature in the gallium nitride transistor can be determined, facilitating the analysis of the relationship between the thermosensitive physical region and the position of the highest junction temperature of the gallium nitride transistor, thereby laying a foundation for calibrating the thermosensitive junction temperature and improving the accuracy of the gallium nitride transistor junction temperature measurement.

[0065] S102. Determine the junction temperature calibration model and the position with the highest junction temperature in the junction temperature distribution curve according to the junction temperature distribution curve.

[0066] Specifically, after determining the junction temperature distribution curve of the gallium nitride transistor, the junction temperature distribution curve can be preprocessed to determine the junction temperature calibration model, so as to improve the accuracy of the thermal junction temperature calibration. Exemplarily, a mathematical fitting method, such as the Fourier series fitting method, can be used to fit the discrete junction temperature distribution curve of the gallium nitride transistor into a continuous junction temperature distribution curve of the gallium nitride transistor, so as to be able to remove the noise and discrete point fluctuations in the junction temperature measurement data, making the junction temperature distribution curve more conform to the physical law, improving the reliability of the junction temperature distribution curve, and helping to more accurately calibrate the thermal junction temperature. After smoothing the junction temperature distribution curve, the junction temperature distribution curve of the gallium nitride transistor can be further normalized to obtain the junction temperature calibration model. The normalization process realizes the standardization of the junction temperature data, facilitating the subsequent calibration calculation of the thermal junction temperature. At the same time, the normalization process makes the junction temperature calibration model universal and applicable to the analysis of the junction temperature distribution of the gallium nitride transistor under different power conditions, thus improving the efficiency of calibrating the thermal junction temperature.

[0067] In addition, according to the junction temperature distribution curve, the position with the highest junction temperature in the gallium nitride transistor can be determined. Exemplarily, Figure 3 is a schematic structural diagram of a junction temperature distribution curve provided in Embodiment 1 of the present invention. As Figure 3 shown, the position with the highest junction temperature in the gallium nitride transistor is 15 μm along the channel extension direction, and the highest junction temperature is 45 °C, thus laying a foundation for subsequent determination of the relative distance between the thermosensitive physical region and the position with the highest junction temperature and calibration of the thermal junction temperature.

[0068] S103. Obtain the thermal junction temperature of the thermosensitive physical region in the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position with the highest junction temperature.

[0069] Among them, the thermosensitive physical region can be specifically understood as the key region inside the gallium nitride transistor that is sensitive to temperature changes. The thermosensitive physical region is the measurement point of the thermosensitive electrical parameter. Exemplarily, the thermosensitive physical region can be the gate-source characteristic junction plane of the gallium nitride transistor or the channel region of the gallium nitride transistor. The temperature of these regions directly affects the electrical performance of the gallium nitride transistor. The thermosensitive electrical parameter can be specifically the electrical parameter in the gallium nitride transistor that changes significantly with temperature, and the thermosensitive electrical parameter is used to indirectly estimate the thermal junction temperature.

[0070] In an exemplary embodiment, the thermosensitive electrical parameter can be the high - electric - field thermal trap emission time. The thermosensitive physical region corresponding to this thermosensitive electrical parameter is the channel region of the gallium nitride transistor. The method for measuring this thermosensitive electrical parameter can specifically be to apply a high - voltage pulse when the gallium nitride transistor is operating, causing thermal trapping and emission effects in the channel region of the gallium nitride transistor. By measuring the recovery time of the drain current, that is, the emission time, to characterize the thermosensitive junction temperature of the gallium nitride transistor. For example, the emission time shortens as the thermosensitive junction temperature of the gallium nitride transistor increases. After measuring the emission time of the drain current of the gallium nitride transistor, according to the pre - calibrated relationship between the emission time of the drain current and the thermosensitive junction temperature of the gallium nitride transistor, the thermosensitive junction temperature is deduced. For example, if the measured emission time of the drain current is 7.217×10 -7 s, and the temperature corresponding to this emission time is 315.5K, then the thermosensitive junction temperature of the gallium nitride transistor is 315.5K.

[0071] In another exemplary embodiment, the thermosensitive electrical parameter can be the gate - source characteristic junction resistance. The thermosensitive physical region corresponding to this thermosensitive electrical parameter is the junction plane of the gate - source characteristic junction of the gallium nitride transistor, which is located on the side of the gate close to the source. The method for measuring this thermosensitive electrical parameter can specifically be to apply a voltage pulse when the gallium nitride transistor is operating, measure the response time of the gate current, and calculate the gate - source characteristic junction resistance in combination with the gate - source voltage. The thermosensitive junction temperature of the gallium nitride transistor is characterized by the gate - source characteristic junction resistance. For example, the gate - source characteristic junction resistance increases as the thermosensitive junction temperature of the gallium nitride transistor increases. After calculating the gate - source characteristic junction resistance, according to the pre - calibrated relationship between the gate - source characteristic junction resistance and the thermosensitive junction temperature of the gallium nitride transistor, the thermosensitive junction temperature is deduced. For example, if the measured gate - source characteristic junction resistance is 426.1Ω, and the temperature corresponding to this emission time is 313.95K, then the thermosensitive junction temperature of the gallium nitride transistor is 313.95K.

[0072] It can be understood that there is a deviation between the thermosensitive physical region and the highest junction - temperature point of the gallium nitride transistor, resulting in a deviation between the thermosensitive junction temperature measured through the thermosensitive electrical parameter and the position with the highest junction temperature in the gallium nitride transistor. Therefore, it is necessary to determine the position of the thermosensitive physical region along the channel - extending direction of the gallium nitride transistor, so as to be able to determine the relative distance between the thermosensitive physical region and the position of the highest junction temperature according to the junction - temperature distribution curve, and thus be able to calibrate the thermosensitive junction temperature according to the junction - temperature calibration model to improve the accuracy of the gallium nitride transistor junction - temperature measurement.

[0073] S104. Determine the calibrated junction temperature of the gallium nitride transistor according to the thermosensitive junction temperature, the relative distance, and the junction - temperature calibration model.

[0074] Specifically, after measuring the thermosensitive electrical parameters corresponding to the thermosensitive physical region of the gallium nitride transistor to obtain the thermosensitive junction temperature of the thermosensitive physical region, the relative distance between the thermosensitive physical region and the position of the highest junction temperature as well as the junction temperature calibration model can be determined according to the junction temperature distribution curve, and the relationship between the thermosensitive junction temperature of the thermosensitive physical region and the junction temperature corresponding to the position of the highest junction temperature can be determined. Through the determined relationship between the junction temperatures, the thermosensitive junction temperature can be calibrated, thereby realizing the accurate calculation of the highest junction temperature of the gallium nitride transistor through the measurement of the thermosensitive electrical parameters. By calibrating the thermosensitive junction temperature, the measurement error caused by the uneven internal temperature distribution of the gallium nitride transistor in the thermosensitive electrical parameter measurement method is effectively corrected, the accuracy of the gallium nitride transistor junction temperature measurement is improved, thereby providing key data support for the thermal management of the gallium nitride transistor and enhancing the stability and reliability of the gallium nitride transistor.

[0075] In this embodiment, by obtaining the junction temperature distribution curve of the gallium nitride transistor, the position with the highest junction temperature in the gallium nitride transistor can be determined, which is convenient for analyzing the relationship between the thermosensitive physical region and the position of the highest junction temperature of the gallium nitride transistor. At the same time, according to the junction temperature distribution curve, the junction temperature calibration model can be determined, which is convenient for calibrating and calculating the thermosensitive junction temperature, thereby improving the efficiency of calibrating the thermosensitive junction temperature. By obtaining the thermosensitive junction temperature of the thermosensitive physical region in the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position of the highest junction temperature, and combining the junction temperature calibration model, the relationship between the thermosensitive junction temperature of the thermosensitive physical region and the junction temperature corresponding to the position of the highest junction temperature can be determined. According to the determined relationship between the junction temperatures, the thermosensitive junction temperature can be calibrated, thereby being able to determine the calibrated junction temperature of the gallium nitride transistor. By calibrating the thermosensitive junction temperature, the measurement error caused by the uneven internal temperature distribution of the gallium nitride transistor in the thermosensitive electrical parameter measurement method is effectively corrected, and the accuracy of the gallium nitride transistor junction temperature measurement is improved.

[0076] Embodiment 2

[0077] Figure 4 is a schematic flowchart of a method for calibrating the junction temperature of a gallium nitride transistor provided in Embodiment 2 of the present invention. On the basis of the above embodiment, this embodiment details the method for obtaining the junction temperature distribution curve of the gallium nitride transistor. Correspondingly, as Figure 4 shown, the method for calibrating the junction temperature of the gallium nitride transistor in this embodiment may include:

[0078] S201. Obtain the reflectivity at each position on the surface of the gallium nitride transistor.

[0079] Among them, the reflectivity can be specifically understood as the ratio of the light intensity reflected from the surface of the gallium nitride transistor under the irradiation of light with a specific wavelength to the incident light intensity. Specifically, a reflectivity tester can be used to detect the surface reflectivity of the gallium nitride transistor to obtain the reflectivity at each position on the surface of the gallium nitride transistor, laying a foundation for subsequent determination of the junction temperature at each position on the surface of the gallium nitride transistor.

[0080] Optionally, obtaining the reflectivity at each position on the surface of the gallium nitride transistor includes: placing the gallium nitride transistor on a reflectivity test platform; a temperature adjustment module is provided on the reflectivity test platform; providing a power pulse to the source or drain of the gallium nitride transistor; controlling the temperature adjustment module to heat the gallium nitride transistor to a preset time with a preset scattering power; after reaching the preset time, based on the reflectivity acquisition module, obtaining the reflectivity at each position on the surface of the gallium nitride transistor.

[0081] Specifically, first place the gallium nitride transistor on the reflectivity test platform so that the gallium nitride transistor contacts the temperature adjustment module provided on the reflectivity test platform for subsequent surface reflectivity measurement. Before placing the gallium nitride transistor on the reflectivity test platform, the gallium nitride transistor needs to be preprocessed. In an exemplary embodiment, the package of the measured gallium nitride transistor can be removed as needed to directly expose the die, facilitating the accurate measurement of the surface reflectivity of the gallium nitride transistor. Then, the die can be soldered to the printed circuit board using flying wires to ensure stable electrical connection between the gallium nitride transistor and the reflectivity test platform. After the preprocessing of the gallium nitride transistor is completed, the processed gallium nitride transistor is fixed on the reflectivity test platform. Then, a power pulse is input to the source or drain of the measured gallium nitride transistor using a thermal power source (Power Supply Unit, PSU) to cause the gallium nitride transistor to generate current self-heating. The application of the power pulse can simulate the heating state of the gallium nitride transistor during high-power operation. The current excited during the high-power operation of the gallium nitride transistor generates heat through the channel region, thereby causing the surface temperature of the gallium nitride transistor to rise. Exemplarily, the voltage value of the power pulse can be 2.4V, the current value of the power pulse can be 1.2A, and the pulse width of the power pulse can be 0.5s, so that the application of the power pulse can simulate the heating characteristics of the gallium nitride transistor under actual operating conditions, making the measurement result of the surface reflectivity closer to the actual operating state and improving the measurement accuracy.

[0082] Meanwhile, the temperature regulation module heats the gallium nitride transistor to a preset time with a preset scattering power. Exemplarily, the temperature regulation module may include a thermocouple. The thermocouple heats the gallium nitride transistor to a preset time with a preset scattering power to balance the heat generated by the self-heating of the gallium nitride transistor, thereby ensuring the stability of the junction temperature of the gallium nitride transistor and finally reaching a thermal equilibrium state. At this time, the junction temperature distribution on the surface of the gallium nitride transistor tends to be stable, which is suitable for subsequent reflectivity measurement. Exemplarily, the constant heat dissipation power may be 60w to effectively balance the heat generated by the self-heating of the gallium nitride transistor, avoid the interference of temperature fluctuations on the reflectivity measurement, and ensure the accuracy and reliability of the reflectivity measurement. It can be understood that whether the gallium nitride transistor reaches thermal equilibrium is evaluated based on the thermal time constant. The thermal time constant required for the temperature response of the gallium nitride transistor to reach a steady state is usually in the millisecond level. Therefore, to ensure the full realization of thermal equilibrium, the heating time of the thermocouple on the gallium nitride transistor is generally set to more than 3 minutes to ensure that the temperature distribution inside and on the surface of the gallium nitride transistor is completely stable and avoid the influence of local temperature gradients.

[0083] After the gallium nitride transistor reaches thermal equilibrium, the RM2000 reflectivity tester can be used to scan the surface of the gallium nitride transistor to obtain the reflectivity at each position on the surface of the gallium nitride transistor, providing a data basis for subsequent determination of the junction temperature at each position on the surface of the gallium nitride transistor. Among them, the scanning step of the RM2000 reflectivity tester is 1μm, and the wavelength range is 20nm - 1000nm to be able to comprehensively capture the optical characteristics of the surface of the gallium nitride transistor and ensure the measurement accuracy of the reflectivity.

[0084] S202. Determine the junction temperature at each position on the surface of the gallium nitride transistor according to the reflectivity at each position on the surface of the gallium nitride transistor.

[0085] Specifically, after obtaining the reflectivity at each position on the surface of gallium nitride, combined with the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor, the junction temperature corresponding to each position on the surface of the gallium nitride transistor can be determined according to the reflectivity at each position on the surface of the gallium nitride transistor.

[0086] Optionally, determining the junction temperature at each position on the surface of the gallium nitride transistor according to the reflectivity at each position on the surface of the gallium nitride transistor includes: obtaining the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor; determining the junction temperature at each position on the surface of the gallium nitride transistor according to the mapping relationship and the reflectivity at each position on the surface of the gallium nitride transistor.

[0087] Specifically, in order to determine the junction temperature at each position on the surface of the gallium nitride transistor, first, the mapping relationship between the surface reflectivity of the gallium nitride transistor and the junction temperature of the gallium nitride transistor was obtained. Exemplarily, the mapping relationship between the junction temperature of the gallium nitride transistor and the surface reflectivity of the gallium nitride transistor can be expressed as a negatively correlated linear function, that is, the lower the surface reflectivity of the gallium nitride transistor, the higher the junction temperature of the gallium nitride transistor. Thus, the junction temperature at each position on the surface of the gallium nitride transistor can be indirectly deduced by measuring the reflectivity at each position on the surface of the gallium nitride transistor.

[0088] Optionally, obtaining the mapping relationship between the surface reflectivity of the gallium nitride transistor and the junction temperature includes: placing the gallium nitride transistor on a reflectivity test platform; a temperature adjustment module is provided on the reflectivity test platform; controlling the temperature adjustment module to adjust the test junction temperature of the gallium nitride transistor, and obtaining the surface reflectivity of the gallium nitride transistor at different test junction temperatures; determining the mapping relationship between the surface reflectivity of the gallium nitride transistor and the junction temperature according to each test junction temperature and the surface reflectivity at each test junction temperature.

[0089] Specifically, the gallium nitride transistor is placed on the reflectivity test platform so that the gallium nitride transistor contacts the temperature adjustment module provided on the reflectivity test platform for subsequent surface reflectivity measurement. Before placing the gallium nitride transistor on the reflectivity test platform, the gallium nitride transistor needs to be pre-treated. In an exemplary embodiment, the package of the measured gallium nitride transistor can be removed as needed to directly expose the die, which is convenient for accurate measurement of the surface reflectivity of the gallium nitride transistor. Then, the die can be soldered to the printed circuit board using flying wires to ensure stable electrical connection between the gallium nitride transistor and the reflectivity test platform. After the pre-treatment of the gallium nitride transistor is completed, the processed gallium nitride transistor is fixed on the reflectivity test platform. Among them, the reflectivity test platform can be an RM2000 reflectivity tester. The scanning step size of this reflectivity tester is 1μm, and the wavelength range is 20nm - 1000nm. This reflectivity tester can scan the surface of the gallium nitride transistor with high precision to obtain surface reflectivity data.

[0090] After placing the gallium nitride transistor on the reflectivity test platform, by adjusting the power of the temperature regulation module in contact with the gallium nitride transistor, the test junction temperature of the gallium nitride transistor can be precisely adjusted, so that the mapping relationship between the surface reflectivity and the junction temperature can be established. Exemplarily, the temperature regulation module can be a thermocouple. By setting the thermocouple in close contact with the gallium nitride transistor to be measured, the effectiveness of heat conduction can be ensured. And by adjusting the power of the thermocouple and swapping the hot and cold surfaces where the thermocouple contacts the gallium nitride transistor, the test junction temperature of the gallium nitride transistor can be adjusted to multiple preset values, such as 25 °C, 50 °C, and 75 °C, etc. Among them, the thermocouple can adopt negative feedback regulation and the temperature control accuracy can be ±0.5 °C, thus ensuring the uniformity and stability of the test junction temperature of the gallium nitride transistor and improving the accuracy of measuring the surface reflectivity of the gallium nitride transistor.

[0091] At the same time, when adjusting the test junction temperature of the gallium nitride transistor to each preset value, the reflectivity of the surface of the gallium nitride transistor is measured using an RM2000 reflectivity tester. Among them, the principle of measuring the surface reflectivity is based on the thermal reflection technique. The reflectivity tester emits light of a specific wavelength to the surface of the gallium nitride transistor. By measuring the ratio of the reflected light intensity to the incident light intensity, the surface reflectivity of the gallium nitride transistor can be measured. Due to the optical properties of the material, such as the refractive index changing with temperature, the surface reflectivity will also change with the junction temperature. For example, when the test junction temperature of the gallium nitride transistor is 20 °C, the measurement result of the surface reflectivity may be 0.48, and when the test junction temperature of the gallium nitride transistor is 40 °C, the measurement result of the surface reflectivity may be 0.46. After obtaining multiple sets of data groups of the test junction temperature of the gallium nitride transistor and the corresponding surface reflectivity, the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor can be determined according to each test junction temperature and the surface reflectivity at each test junction temperature. Exemplarily, the data group shows that when the test junction temperatures of the gallium nitride transistor are 20 °C, 25 °C, 40 °C, and 50 °C, the surface reflectivities of the gallium nitride transistor are measured to be 0.48, 0.475, 0.46, and 0.45 respectively. By performing data fitting or interpolation on this data group, the mapping relationship between the surface reflectivity R and the junction temperature T can be established. For example, the mapping relationship between the junction temperature T and the surface reflectivity R can be expressed as a negatively correlated linear function: T = -1000R + 500.

[0092] In addition, after obtaining the reflectivity at each position on the surface of the gallium nitride, by combining the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor, the junction temperature at each position on the surface of the gallium nitride transistor can be determined respectively according to the reflectivity at each position on the surface of the gallium nitride transistor. Exemplarily, the mapping relationship between the surface reflectivity R of the gallium nitride transistor and the junction temperature T of the gallium nitride transistor can be T = -1000R + 500. When the reflectivity at a position on the surface of the gallium nitride transistor is measured to be 0.48 by a reflectivity tester, the junction temperature at this position can be determined to be 20 °C according to the mapping relationship.

[0093] S203. Determine the junction temperature distribution map of the gallium nitride transistor according to the junction temperature at each position of the gallium nitride transistor.

[0094] Specifically, after determining the junction temperature at each position on the surface of the gallium nitride transistor, the junction temperature distribution map of the gallium nitride transistor can be further determined. This junction temperature distribution map can reflect the junction temperature at each position on the surface of the gallium nitride transistor. Exemplarily, as Figure 5 shown, this junction temperature distribution map reflects the junction temperature distribution of the gallium nitride transistor along the x direction and along the y direction. Among them, the x direction is the channel direction of the gallium nitride transistor, that is, the direction from the source to the drain, and the y direction is the direction perpendicular to the channel of the gallium nitride transistor, that is, the width direction of the gate. By determining the junction temperature distribution map of the gallium nitride transistor, the junction temperature distribution on the surface of the gallium nitride transistor can be intuitively displayed, laying a foundation for further determining the junction temperature distribution curve on the surface of the gallium nitride transistor.

[0095] S204. Perform coordinate transformation on the junction temperature distribution map of the gallium nitride transistor to obtain the junction temperature distribution curve of the gallium nitride transistor.

[0096] Specifically, after determining the junction temperature distribution map of the gallium nitride transistor, since the junction temperature distribution map of the gallium nitride transistor includes the junction temperature distribution of the gallium nitride transistor along the x direction and along the y direction. Among them, the x direction is the channel direction of the gallium nitride transistor, and the y direction is the direction perpendicular to the channel of the gallium nitride transistor. The change in the junction temperature of the gallium nitride transistor along the direction perpendicular to the channel is relatively small. To focus on the change trend of the junction temperature of the gallium nitride transistor along the channel direction, the junction temperature distribution map is averaged along the y-axis to the x direction to generate a junction temperature distribution curve as Figure 1 shown. The calculation formula for averaging along the y-axis to the x direction is: where x i is the i-th position along the x-axis, y j is the j-th position along the y-axis, n is the number of positions along the y-axis direction, T(x i , y j ) is the junction temperature value at the position (x i , y j ), and Tavg (x i ) is the junction temperature distribution curve, which reflects the trend of the junction temperature change of the gallium nitride crystal along the channel extension direction. By performing coordinate transformation on the junction temperature distribution map of the gallium nitride transistor, the junction temperature distribution curve of the gallium nitride transistor is obtained, which simplifies the data dimension and highlights the law of the junction temperature change of the gallium nitride transistor along the channel direction, conforming to the physical characteristics of the junction temperature distribution of the gallium nitride transistor. At the same time, according to this junction temperature distribution curve, the position with the highest junction temperature in the gallium nitride transistor can be determined, which is convenient for analyzing the relationship between the thermosensitive physical region and the position with the highest junction temperature, thus laying a foundation for calibrating the thermosensitive junction temperature and improving the accuracy of the junction temperature measurement of the gallium nitride transistor.

[0097] S205. Determine the junction temperature calibration model and the position with the highest junction temperature in the junction temperature distribution curve according to the junction temperature distribution curve.

[0098] S206. Obtain the thermosensitive junction temperature in the thermosensitive physical region of the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position with the highest junction temperature.

[0099] S207. Determine the calibrated junction temperature of the gallium nitride transistor according to the thermosensitive junction temperature, the relative distance and the junction temperature calibration model.

[0100] In this embodiment, by obtaining the reflectivity at each position on the surface of the gallium nitride transistor and combining the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor, the junction temperature at each position on the surface of the gallium nitride transistor can be determined. According to the junction temperature at each position of the gallium nitride transistor, the junction temperature distribution map of the gallium nitride transistor can be determined, and by performing coordinate transformation on the junction temperature distribution map of the gallium nitride transistor, the junction temperature distribution curve of the gallium nitride transistor is obtained. The junction temperature distribution curve of the gallium nitride transistor highlights the law of the junction temperature change of the gallium nitride transistor along the channel direction, conforming to the physical characteristics of the junction temperature distribution of the gallium nitride transistor. At the same time, according to this junction temperature distribution curve, the position with the highest junction temperature in the gallium nitride transistor can be determined, which is convenient for analyzing the relationship between the thermosensitive physical region and the position with the highest junction temperature, thus laying a foundation for calibrating the thermosensitive junction temperature and improving the accuracy of the junction temperature measurement of the gallium nitride transistor.

[0101] Embodiment III

[0102] Figure 6 is a schematic flowchart of a method for calibrating the junction temperature of a gallium nitride transistor provided in Embodiment III of the present invention. On the basis of the above embodiment, the method for determining the junction temperature calibration model according to the junction temperature distribution curve and the method for determining the calibrated junction temperature of the gallium nitride transistor are described in detail. Correspondingly, as Figure 6 shown, the method for calibrating the junction temperature of the gallium nitride transistor in this embodiment may include:

[0103] S301. Obtain the junction temperature distribution curve of the gallium nitride transistor.

[0104] S302. Determine the position with the highest junction temperature in the junction temperature distribution curve as the first position, and determine other positions in the junction temperature distribution curve as the second positions.

[0105] Specifically, after obtaining the junction temperature distribution curve of the gallium nitride transistor, further perform normalization processing on the junction temperature distribution curve of the gallium nitride transistor to standardize the junction temperature data, facilitating subsequent calibration calculations for the thermal junction temperature. When performing normalization processing on the junction temperature distribution curve of the gallium nitride transistor, first determine the highest junction temperature along the channel direction in the junction temperature distribution curve and the position corresponding to the highest junction temperature, and determine the position of the highest junction temperature as the first position, and determine other positions in the junction temperature distribution curve as the second positions.

[0106] S303. Determine the normalized junction temperature at the first position as 1.

[0107] Specifically, determine the normalized junction temperature at the first position as 1 to serve as the normalization reference for performing normalization processing on the junction temperature distribution curve of the gallium nitride transistor.

[0108] S304. Determine the normalized junction temperature at each second position according to the ratio of the junction temperature at each second position to the junction temperature at the first position in the junction temperature distribution curve.

[0109] Specifically, for each second position except the first position corresponding to the highest junction temperature, calculate the ratio between its junction temperature and the highest junction temperature, that is, the normalized junction temperature at each second position. Exemplarily, in the junction temperature distribution curve of the gallium nitride transistor, the highest junction temperature is 45 °C, the first position is 15 μm, and the junction temperatures at the second positions of 0 μm, 5 μm, 10 μm, 20 μm, 25 μm, 30 μm, and 35 μm are 25 °C, 30 °C, 40 °C, 40 °C, 30 °C, 25 °C, and 25 °C respectively. After determining the normalized junction temperature at the first position as 1, according to the ratio of the junction temperature at each second position to the junction temperature at the first position in the junction temperature distribution curve, determine that the normalized junction temperatures at each second position are 0.5556, 0.6667, 0.8889, 0.8889, 0.6667, 0.5556, and 0.5556 respectively. By calculating the normalized junction temperatures at each second position, the standardization of the junction temperature data is achieved, providing a data basis for subsequent construction of the junction temperature calibration model.

[0110] S305. Determine the normalized distance at each position on the surface of the gallium nitride transistor according to the relative distance between each second position and the first position.

[0111] Specifically, the normalized distance of the first position is determined to be 0, and for each second position except the first position corresponding to the highest junction temperature, the relative distance between each second position and the first position is calculated, that is, the normalized distance at each second position. Exemplarily, in the junction temperature distribution curve of the gallium nitride transistor, the first position is 15μm, and the relative distances between the second positions 0μm, 5μm, 10μm, 20μm, 25μm, 30μm and 35μm and the first position are -15μm, -10μm, -5μm, 5μm, 10μm, 15μm and 20μm, respectively. It can be determined that the normalized distances at each second position are -15μm, -10μm, -5μm, 5μm, 10μm, 15μm and 20μm, respectively. By calculating the normalized distances at each second position, the standardization of the spatial coordinates is achieved, which provides a data basis for the subsequent construction of the junction temperature calibration model.

[0112] S306 : Determine a normalized junction temperature distribution curve of the gallium nitride transistor according to the normalized distances at various positions and the normalized junction temperatures at various positions, and determine the normalized junction temperature distribution curve as a junction temperature calibration model.

[0113] Specifically, according to the determined normalized distance at each position of the gallium nitride transistor and the normalized junction temperature at each position, the normalized distance at each position is used as the x-axis and the normalized junction temperature at each position is used as the y-axis, and the normalized junction temperature distribution curve of the gallium nitride transistor can be determined, and the normalized junction temperature distribution curve can be determined as the junction temperature calibration model. By determining the junction temperature calibration model, data standardization is achieved, which facilitates the subsequent calibration calculation of the thermistor junction temperature. At the same time, the normalization process makes the calibration model universal, which can be applied to the junction temperature distribution analysis of gallium nitride transistors under different power conditions, thereby improving the efficiency of calibrating the thermistor junction temperature.

[0114] It can also be understood that after obtaining the calibration model of the thermistor junction temperature of the gallium nitride transistor, it can be compared with the theoretical simulation model to verify its accuracy. Exemplarily, firstly, based on the structure and operating conditions of the gallium nitride transistor, a thermal simulation model of the gallium nitride transistor is established using a theoretical simulation tool to calculate its theoretical junction temperature distribution. Afterwards, the simulation results are normalized to obtain a theoretical calibration model. The calibration model of the thermistor junction temperature established based on the reflectivity measurement results is compared with the theoretical simulation model to analyze the differences in shape, peak position and junction temperature ratio between the two, such as calculating the mean square error or correlation coefficient to evaluate the accuracy of the thermistor junction temperature calibration model, and ensure that the thermistor junction temperature calibration model can truly reflect the junction temperature distribution characteristics of the gallium nitride transistor, so that the maximum junction temperature can be accurately calculated by the thermistor junction temperature.

[0115] S307. Obtain the thermal junction temperature of the thermosensitive physical region in the gallium nitride transistor, and the relative distance between the thermosensitive physical region and the position of the highest junction temperature.

[0116] Specifically, when calibrating the thermal junction temperature, first determine the position x of the thermosensitive physical region along the channel direction. TAPA , Exemplarily, the thermosensitive physical region is the junction plane of the gate-source characteristic junction of the gallium nitride transistor, and the thermal junction temperature T measured is 40 °C, and x TAPA is 10 μm. Then, according to the junction temperature distribution curve of the gallium nitride transistor, the relative distance between xTAPA and the position of the highest junction temperature of 15 μm can be determined to be -5 μm.

[0117] S308. Determine the normalized junction temperature of the thermosensitive physical region according to the relative distance and the junction temperature calibration model.

[0118] Specifically, according to the relative distance of the thermosensitive physical region, that is, the normalized distance of the thermosensitive physical region, combined with the junction temperature calibration model, the normalized junction temperature of the thermosensitive physical region can be determined. Exemplarily, according to the junction temperature calibration model, the normalized junction temperature T norm at a normalized distance of -5 μm can be determined to be 0.8889, indicating that the thermal junction temperature of the thermosensitive physical region is 88.89% of the highest junction temperature.

[0119] S309. Determine the calibrated junction temperature of the gallium nitride transistor based on the first calculation formula according to the thermal junction temperature and the normalized junction temperature of the thermosensitive physical region.

[0120] Among them, the first calculation formula is:

[0121]

[0122] Among them, T max is the calibrated junction temperature, T measured is the thermal junction temperature, and T norm is the normalized junction temperature of the thermosensitive physical region.

[0123] Specifically, based on the first calculation formula, calibrate T measured Based on T norm to determine the calibrated junction temperature of the gallium nitride transistor. Exemplarily, the thermal junction temperature T measured of the thermosensitive physical region is 40 °C, and the normalized junction temperature T norm of the thermosensitive physical region is 0.8889. Calculating based on the first calculation formula can obtain the calibrated junction temperature T maxis 45°C. Using the junction temperature calibration model and the first calculation formula, the thermal junction temperature is effectively calibrated, enabling the accurate calculation of the maximum junction temperature of the gallium nitride transistor, providing key data support for the thermal management of the gallium nitride transistor. This calibration method effectively solves the measurement error caused by uneven temperature distribution in the thermal electrical parameter method, significantly improves the accuracy of junction temperature measurement, and enhances the stability and reliability of the gallium nitride transistor.

[0124] It can also be understood that after constructing the junction temperature calibration model, the calibration model can also be used to predict the measurement result of another thermal electrical parameter through the measurement result of one thermal electrical parameter, supplemented by actual measurement for reference to verify the accuracy of the calibration model. Exemplarily, after measuring the thermal junction temperature through the high-field thermal trap detrapping time, combining the thermal physical region corresponding to the high-field thermal trap detrapping time and the junction temperature calibration model, the maximum junction temperature of the gallium nitride transistor is obtained. At the same time, according to the junction temperature calibration model and the thermal physical region corresponding to the gate-source characteristic junction resistance, the junction temperature of the thermal physical region corresponding to the gate-source characteristic junction resistance can be predicted, and the resistance value of the gate-source characteristic junction resistance can be further predicted. Subsequently, by actually measuring the resistance value of the gate-source characteristic junction resistance and comparing the measured resistance value of the gate-source characteristic junction resistance with the predicted resistance value, if the error between the measured resistance value and the predicted resistance value is within an acceptable range, it indicates that the junction temperature calibration model can truly reflect the junction temperature distribution characteristics of the gallium nitride transistor, can provide strong support for accurately calculating the maximum junction temperature, and thus can effectively improve the accuracy of junction temperature measurement.

[0125] In this embodiment, by determining the position with the highest junction temperature in the junction temperature distribution curve as the first position, and determining other positions in the junction temperature distribution curve as the second positions, and setting the normalized junction temperature at the first position to 1, the normalized junction temperatures at the second positions in the junction temperature distribution curve can be determined according to the ratio of the junction temperatures at the second positions to the junction temperature at the first position, and the normalized distances at each position on the surface of the gallium nitride transistor can be determined according to the relative distances between the second positions and the first position. Thus, the normalized junction temperature distribution curve of the gallium nitride transistor can be determined according to the normalized distances and the normalized junction temperatures at each position, and it is determined as the junction temperature calibration model. By determining the junction temperature calibration model, the standardization of data is achieved, facilitating subsequent calibration calculations for the thermal-sensitive junction temperature. At the same time, the normalization process makes the calibration model universal and applicable to the analysis of the junction temperature distribution of gallium nitride transistors under different power conditions, thereby improving the efficiency of calibrating the thermal-sensitive junction temperature. In addition, by obtaining the thermal-sensitive junction temperature of the thermally sensitive physical region in the gallium nitride transistor and the relative distance between the thermally sensitive physical region and the position of the highest junction temperature, the normalized junction temperature of the thermally sensitive physical region can be determined according to the relative distance and the junction temperature calibration model, and the calibrated junction temperature of the gallium nitride transistor can be determined based on the first calculation formula according to the thermal-sensitive junction temperature and the normalized junction temperature of the thermally sensitive physical region, thus achieving the effective calibration of the thermal-sensitive junction temperature to accurately estimate the highest junction temperature of the gallium nitride transistor and providing key data support for the thermal management of the gallium nitride transistor.

[0126] Embodiment 4

[0127] Figure 7 FIG. 7 is a schematic structural diagram of a junction temperature calibration device for a gallium nitride transistor provided in Embodiment 4 of the present invention. This device can implement the junction temperature calibration method for the gallium nitride transistor provided in the embodiments of the present invention. This device can be implemented in the form of software and / or hardware and is generally integrated in the controller of the junction temperature calibration system of the gallium nitride transistor. As Figure 7 shown, the device includes: a junction temperature distribution curve acquisition module 401, a junction temperature calibration model determination module 402, a thermal-sensitive junction temperature acquisition module 403, and a calibrated junction temperature determination module 404. The specific structure of the device is as follows:

[0128] The junction temperature distribution curve acquisition module 401 is configured to acquire the junction temperature distribution curve of the gallium nitride transistor.

[0129] The junction temperature calibration model determination module 402 is configured to determine the junction temperature calibration model and the position with the highest junction temperature in the junction temperature distribution curve according to the junction temperature distribution curve.

[0130] The thermal-sensitive junction temperature acquisition module 403 is configured to acquire the thermal-sensitive junction temperature of the thermally sensitive physical region in the gallium nitride transistor and the relative distance between the thermally sensitive physical region and the position of the highest junction temperature.

[0131] The calibration junction temperature determination module 404 is configured to determine the calibration junction temperature of the gallium nitride transistor according to the thermal-sensitive junction temperature, the relative distance, and the junction temperature calibration model.

[0132] In an alternative embodiment of the present invention, the junction temperature distribution curve acquisition module 401 can also be configured to: acquire the reflectivity at each position on the surface of the gallium nitride transistor; determine the junction temperature at each position on the surface of the gallium nitride transistor according to the reflectivity at each position on the surface of the gallium nitride transistor; determine the junction temperature distribution map of the gallium nitride transistor according to the junction temperature at each position of the gallium nitride transistor; perform coordinate transformation on the junction temperature distribution map of the gallium nitride transistor to obtain the junction temperature distribution curve of the gallium nitride transistor.

[0133] In an alternative embodiment of the present invention, the junction temperature distribution curve acquisition module 401 can also be configured to: acquire the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor; determine the junction temperature at each position on the surface of the gallium nitride transistor according to the mapping relationship and the reflectivity at each position on the surface of the gallium nitride transistor.

[0134] In an alternative embodiment of the present invention, the junction temperature distribution curve acquisition module 401 can also be configured to: place the gallium nitride transistor on a reflectivity test platform; a temperature adjustment module is provided on the reflectivity test platform; control the temperature adjustment module to adjust the test junction temperature of the gallium nitride transistor, and acquire the surface reflectivity of the gallium nitride transistor at different test junction temperatures; determine the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor according to each test junction temperature and the surface reflectivity at each test junction temperature.

[0135] In an alternative embodiment of the present invention, the junction temperature calibration model determination module 402 can also be configured to: determine the position with the highest junction temperature in the junction temperature distribution curve as the first position, and determine other positions in the junction temperature distribution curve as the second positions; determine the normalized junction temperature of the first position as 1; determine the normalized junction temperature of each second position according to the ratio of the junction temperature at each second position in the junction temperature distribution curve to the junction temperature at the first position; determine the normalized distance at each position on the surface of the gallium nitride transistor according to the relative distance between each second position and the first position; determine the normalized junction temperature distribution curve of the gallium nitride transistor according to the normalized distance and the normalized junction temperature at each position, and determine the normalized junction temperature distribution curve as the junction temperature calibration model.

[0136] In an alternative embodiment of the present invention, the calibration junction temperature determination module 404 can also be configured to: determine the normalized junction temperature of the thermosensitive physical region according to the relative distance and the junction temperature calibration model; determine the calibration junction temperature of the gallium nitride transistor based on the first calculation formula according to the thermal-sensitive junction temperature and the normalized junction temperature of the thermosensitive physical region; the first calculation formula is:

[0137]

[0138] Among them, T max is the calibrated junction temperature, T measured is the thermosensitive junction temperature, and T norm is the normalized junction temperature of the thermosensitive physical region.

[0139] In an alternative embodiment of the present invention, the junction temperature distribution curve acquisition module 401 can also be used to: place the gallium nitride transistor on a reflectivity test platform; a temperature adjustment module is provided on the reflectivity test platform; provide a power pulse to the source or drain of the gallium nitride transistor; control the temperature adjustment module to heat the gallium nitride transistor to a preset time with a preset scattering power; after reaching the preset time, obtain the reflectivity at each position on the surface of the gallium nitride transistor based on the reflectivity acquisition module.

[0140] Among them, the voltage value of the power pulse is 2.4V, the current value of the power pulse is 1.2A, and the pulse width of the power pulse is 0.5s; the preset heat dissipation power is 60W.

[0141] The above-mentioned junction temperature calibration device for gallium nitride transistors can execute the junction temperature calibration method for gallium nitride transistors provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects for executing the method. For the technical details not described in detail in this embodiment, reference can be made to the junction temperature calibration method based on gallium nitride transistors provided in any embodiment of the present invention.

[0142] Since the above-described junction temperature calibration device for gallium nitride transistors is a device that can execute the junction temperature calibration method for gallium nitride transistors in the embodiments of the present invention, based on the junction temperature calibration method for gallium nitride transistors introduced in the embodiments of the present invention, those skilled in the art can understand the specific implementation manners and various variations of the junction temperature calibration device for gallium nitride transistors in this embodiment. Therefore, the implementation of the junction temperature calibration method for gallium nitride transistors in the embodiments of the present invention by this junction temperature calibration device for gallium nitride transistors will not be described in detail here. As long as the device adopted by those skilled in the art to implement the junction temperature calibration method for gallium nitride transistors in the embodiments of the present invention belongs to the scope of protection of this application.

[0143] Embodiment Five

[0144] Figure 8The structural schematic diagram of a controller for a method of calibrating the junction temperature of a gallium nitride transistor that can be used to implement the embodiments of the present invention is shown. The controller can take various forms to adapt to the environment and requirements within the junction temperature calibration system of the gallium nitride transistor. For example, a thermosensitive junction temperature detection controller and a thermosensitive junction temperature calibration controller. These devices are specifically designed to obtain the thermosensitive junction temperature and calibrate the thermosensitive junction temperature to ensure the stability and reliability of the junction temperature calibration process of the gallium nitride transistor. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or claimed herein.

[0145] As Figure 8 shown, the controller 10 includes at least one processor 11 and a memory communicatively connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc. The memory stores a computer program executable by the at least one processor. The processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 into the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the controller 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other via a bus 14. An input / output (I / O) interface 15 is also connected to the bus 14.

[0146] Multiple components in the controller 10 are connected to the I / O interface 15, including: an input unit 16, such as control buttons, operation panels, etc. of the junction temperature calibration system of the intelligent gallium nitride transistor; an output unit 17, such as a display screen, a sound prompt system, etc. of the junction temperature calibration system of the gallium nitride transistor; a storage unit 18, such as a hard disk, a flash memory, etc. of the junction temperature calibration system of the gallium nitride transistor; and a communication unit 19, such as a communication module, a Wi-Fi device, etc. of the junction temperature calibration system of the gallium nitride transistor. The communication unit 19 allows the controller 10 to exchange information / data with other devices through, for example, the internal network and / or communication system of the junction temperature calibration system of the gallium nitride transistor.

[0147] The processor 11 can be various general and / or special processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 executes the various methods and processes described above, such as the method of calibrating the junction temperature of the gallium nitride transistor.

[0148] In some embodiments, the method for calibrating the junction temperature of a gallium nitride transistor can be implemented as a computer program tangibly embodied in a computer-readable storage medium, such as a storage unit. In some embodiments, part or all of the computer program can be loaded and / or installed onto the junction temperature calibration system of the gallium nitride transistor in the above embodiments via a ROM and / or a communication unit. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the method for calibrating the junction temperature of the gallium nitride transistor described above can be performed. Alternatively, in other embodiments, the processor 11 can be configured to execute the method for calibrating the junction temperature of the gallium nitride transistor by any other suitable means (e.g., by means of firmware).

[0149] Optionally, a method for calibrating the junction temperature of a gallium nitride transistor may include: obtaining a junction temperature distribution curve of the gallium nitride transistor; determining a junction temperature calibration model according to the junction temperature distribution curve, and a position with the highest junction temperature in the junction temperature distribution curve; obtaining the thermal junction temperature of a thermosensitive physical region in the gallium nitride transistor, and a relative distance between the thermosensitive physical region and the position with the highest junction temperature; and determining a calibrated junction temperature of the gallium nitride transistor according to the thermal junction temperature, the relative distance, and the junction temperature calibration model.

[0150] The various embodiments of the systems and techniques described above in this document can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-chip (SOCs), complex programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a dedicated or general-purpose programmable processor, and can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit the data and instructions to the storage system, the at least one input device, and the at least one output device.

[0151] The computer program for implementing the method of the present invention can be written in any combination of one or more programming languages. These computer programs can be provided to a processor of a general-purpose computer, a dedicated computer, or other programmable data processing device, such that when the computer program is executed by the processor, the functions / operations specified in the flowchart and / or block diagram are implemented. The computer program can be executed entirely on the machine, partially on the machine, executed partially on the machine and partially on a remote machine as an independent software package, or executed entirely on a remote machine or server.

[0152] In the context of the present invention, a computer-readable storage medium can be a tangible medium that can contain or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. The computer-readable storage medium can include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. Alternatively, the computer-readable storage medium can be a machine-readable signal medium. More specific examples of the machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0153] In order to provide interaction with a user, the systems and techniques described herein can be implemented on a controller having: a display device (e.g., a display screen of a junction temperature calibration system of a gallium nitride transistor) for displaying information to the user; and an input unit (e.g., control buttons or an operation panel of a junction temperature calibration system of a gallium nitride transistor) of the junction temperature calibration system of the gallium nitride transistor, by which the user can provide input to the controller. Other kinds of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0154] The systems and techniques described herein can be implemented in a computing system including backend components (e.g., as a data server), or a computing system including middleware components (e.g., an application server), or a computing system including frontend components (e.g., a user computer having a graphical user interface or a web browser through which the user can interact with an implementation of the systems and techniques described herein), or a computing system including any combination of such backend components, middleware components, or frontend components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: local area network (LAN), wide area network (WAN), blockchain network, and the Internet.

[0155] A computing system may include a client and a server. The client and the server are generally far from each other and usually interact via a communication network. The client-server relationship is created by computer programs that run on respective computers and have a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or a cloud host, which is a host product in the cloud computing service system, solving the defects of difficult management and weak business scalability existing in traditional physical hosts and VPS services.

[0156] It should be understood that various forms of the processes shown above can be used, with steps reordered, added, or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in the present invention can be achieved, and no limitation is imposed herein.

[0157] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for calibrating the junction temperature of a gallium nitride transistor, characterized in that, Including: Obtain the junction temperature distribution curve of the gallium nitride transistor; According to the junction temperature distribution curve, determine the junction temperature calibration model and the position with the highest junction temperature in the junction temperature distribution curve; Obtain the thermal junction temperature of the thermosensitive physical region in the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position with the highest junction temperature; According to the thermal junction temperature, the relative distance, and the junction temperature calibration model, determine the calibrated junction temperature of the gallium nitride transistor.

2. The method for calibrating the junction temperature of a gallium nitride transistor according to claim 1, wherein Obtaining the junction temperature distribution curve of the gallium nitride transistor includes: Obtain the reflectivity at each position on the surface of the gallium nitride transistor; According to the reflectivity at each position on the surface of the gallium nitride transistor, determine the junction temperature at each position on the surface of the gallium nitride transistor; According to the junction temperature at each position of the gallium nitride transistor, determine the junction temperature distribution map of the gallium nitride transistor; Perform coordinate transformation on the junction temperature distribution map of the gallium nitride transistor to obtain the junction temperature distribution curve of the gallium nitride transistor.

3. The method for calibrating the junction temperature of the gallium nitride transistor according to claim 2, wherein Determining the junction temperature at each position on the surface of the gallium nitride transistor according to the reflectivity at each position on the surface of the gallium nitride transistor includes: Obtain the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor; According to the mapping relationship and the reflectivity at each position on the surface of the gallium nitride transistor, determine the junction temperature at each position on the surface of the gallium nitride transistor.

4. The method for calibrating the junction temperature of a gallium nitride transistor according to claim 3, characterized in that, Obtaining the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor includes: Place the gallium nitride transistor on a reflectivity test platform; a temperature adjustment module is provided on the reflectivity test platform; Control the temperature adjustment module to adjust the test junction temperature of the gallium nitride transistor and obtain the surface reflectivity of the gallium nitride transistor at different test junction temperatures; According to each test junction temperature and the surface reflectivity at each test junction temperature, determine the mapping relationship between the surface reflectivity and the junction temperature of the gallium nitride transistor.

5. The method for calibrating the junction temperature of a gallium nitride transistor according to claim 1, characterized in that, Determining the junction temperature calibration model according to the junction temperature distribution curve includes: Determine the position with the highest junction temperature in the junction temperature distribution curve as the first position and other positions in the junction temperature distribution curve as the second position; Determine the normalized junction temperature of the first position as 1; According to the ratio of the junction temperature at each second position in the junction temperature distribution curve to the junction temperature at the first position, determine the normalized junction temperature at each second position; According to the relative distance between each second position and the first position, determine the normalized distance at each position on the surface of the gallium nitride transistor; According to the normalized distance at each position and the normalized junction temperature at each position, determine the normalized junction temperature distribution curve of the gallium nitride transistor and determine the normalized junction temperature distribution curve as the junction temperature calibration model.

6. The method for calibrating the junction temperature of the gallium nitride transistor according to claim 5, wherein Determining the calibrated junction temperature of the gallium nitride transistor according to the thermal junction temperature, the relative distance, and the junction temperature calibration model includes: According to the relative distance and the junction temperature calibration model, determine the normalized junction temperature of the thermosensitive physical region; Based on the first calculation formula, determine the calibrated junction temperature of the gallium nitride transistor according to the thermosensitive junction temperature and the normalized junction temperature of the thermosensitive physical region; the first calculation formula is: Among them, T max is the calibrated junction temperature, T measured is the thermistor junction temperature, and T norm is the normalized junction temperature of the thermistor physical region.

7. The method for calibrating the junction temperature of a gallium nitride transistor according to claim 2, wherein Obtain the reflectivity at each position on the surface of the gallium nitride transistor, including: Place the gallium nitride transistor on a reflectivity test platform; a temperature adjustment module is provided on the reflectivity test platform; Provide a power pulse to the source or drain of the gallium nitride transistor; Control the temperature adjustment module to heat the gallium nitride transistor to a preset time with a preset scattering power; After reaching the preset time, obtain the reflectivity at each position on the surface of the gallium nitride transistor based on the reflectivity acquisition module.

8. The method for calibrating the junction temperature of a gallium nitride transistor according to claim 7, characterized in that, The voltage value of the power pulse is 2.4V, the current value of the power pulse is 1.2A, and the pulse width of the power pulse is 0.5s; The preset heat dissipation power is 60W.

9. A junction temperature calibration device for a gallium nitride transistor, characterized in that, Including: A junction temperature distribution curve acquisition module for acquiring the junction temperature distribution curve of the gallium nitride transistor; A junction temperature calibration model determination module for determining a junction temperature calibration model and the position with the highest junction temperature in the junction temperature distribution curve according to the junction temperature distribution curve; A thermosensitive junction temperature acquisition module for acquiring the thermosensitive junction temperature of the thermosensitive physical region in the gallium nitride transistor and the relative distance between the thermosensitive physical region and the position with the highest junction temperature; A calibrated junction temperature determination module for determining the calibrated junction temperature of the gallium nitride transistor according to the thermosensitive junction temperature, the relative distance, and the junction temperature calibration model.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions, which are used to implement the junction temperature calibration method of the gallium nitride transistor according to any one of claims 1-8 when executed by a processor.

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