Light-emitting LED device and preparation method thereof

Abstract

The invention discloses a light-emitting LED device and a preparation method thereof, and relates to the technical field of semiconductor devices.The light-emitting LED device comprises a base substrate, an LED chip, a fluorescent film layer, a lens glue layer, a transparent glue layer and a white glue layer; the LED chip is bonded on the substrate, a transparent adhesive layer is arranged on the side wall of the LED chip, the upper surface of the transparent adhesive layer is flush with the upper surface of the LED chip to form a plane for bearing the fluorescent film layer, a white adhesive layer is arranged on the side, away from the LED chip, of the transparent adhesive layer, and the white adhesive layer and the fluorescent film layer are covered with hemispherical lens adhesive layers. The white glue layer comprises a first white glue sub-layer and a second white glue sub-layer connected with the first white glue sub-layer, the second white glue sub-layer is covered with a lens glue layer, and the structure of one side, close to the lens glue layer, of the second white glue sub-layer is arranged in a manner that the middle part is concave downwards; the technical problems that in the prior art, the convergence capacity of a hemispherical lens layer on light emitted from the edge is limited, the hemispherical lens layer is prone to falling off, and the service life is affected can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and particularly relates to a light-emitting LED device and a preparation method thereof. Background Art

[0002] Light-emitting LED devices have the advantages of energy conservation, durability, and no pollution. Currently, they have been widely used in fields such as lighting, display, and backlight sources, and have attracted wide attention as the next-generation lighting method with obvious advantages. Usually, after a light-emitting chip is fixed at the bottom of a bracket cup, the light-emitting chip is electrically connected to the bracket through a gold wire or an alloy metal wire. Then, different-wavelength phosphors and encapsulation glue are mixed evenly in a certain proportion and used to encapsulate the light-emitting chip to obtain a white light source.

[0003] Generally, a hemispherical LENS (lens) shape is used in light-emitting LED devices to improve the product brightness. The hemispherical lens layer can converge the diverging light, concentrate the originally scattered light and emit it in a specific direction, increase the light flux per unit area, and thus improve the local brightness. However, the ability of the hemispherical LENS (lens) shape to converge the light at the edge is limited, so the performance improvement is limited. At the same time, the hemispherical lens layer is prone to falling off, resulting in a decrease in light efficiency and affecting the service life of the light-emitting LED device. Summary of the Invention

[0004] Aiming at the deficiencies of the prior art, the purpose of the present invention is to provide a light-emitting LED device and a preparation method thereof, aiming to solve the technical problems in the prior art that the hemispherical lens layer has limited ability to converge the light at the edge and is prone to falling off, affecting the service life.

[0005] On the one hand, the present invention provides a light-emitting LED device, which includes:

[0006] A substrate, an LED chip, a fluorescent film layer, a lens glue layer, a transparent glue layer, and a white glue layer;

[0007] The LED chip is bonded to the substrate, a transparent glue layer is provided on the side wall of the LED chip, the upper surface of the transparent glue layer is flush with the upper surface of the LED chip to form a plane for carrying the fluorescent film layer, a white glue layer is provided on the side of the transparent glue layer away from the LED chip, and a hemispherical lens glue layer covers the white glue layer and the fluorescent film layer;

[0008] The white glue layer includes a first white glue sub-layer and a second white glue sub-layer connected to the first white glue sub-layer. The lens glue layer covers the second white glue sub-layer, and the structure of the second white glue sub-layer on the side close to the lens glue layer is concave in the middle.

[0009] Compared with the prior art, the beneficial effects of the present invention are as follows: Through the light-emitting LED device provided by the present invention, the light efficiency can be effectively improved and the service life can be extended. Specifically, a white glue layer is provided on the side of the transparent glue layer away from the LED chip. A hemispherical lens glue layer is covered on the white glue layer and the fluorescent film layer. The white glue layer includes a first white glue sub-layer and a second white glue sub-layer connected to the first white glue sub-layer. The lens glue layer is covered on the second white glue sub-layer. The structure of the second white glue sub-layer on the side close to the lens glue layer is concave in the middle, so that the light emitted from the side of the LED chip through the fluorescent film layer is reflected to the middle of the lens glue layer by the concave structure in the middle of the second white glue sub-layer, reducing the light output at the edge, realizing light guiding, and improving the light efficiency. Then, the hemispherical lens glue layer further converges the light, further improving the light efficiency. The concave setting in the middle of the second white glue sub-layer will increase the contact area with the lens glue layer, improve the adhesion, reduce the probability of the lens glue layer falling off, and improve the life and stability of the light-emitting device, thereby solving the technical problems in the prior art that the converging ability of the hemispherical lens layer for the light at the edge is limited and it is easy to fall off and affect the service life.

[0010] According to one aspect of the above technical solution, the height difference of the concave setting in the middle of the second white glue sub-layer is 180 μm - 220 μm, the angles of the two sides bulging are 42° - 45°, and the width of the second white glue sub-layer is 880 μm - 920 μm.

[0011] According to one aspect of the above technical solution, the second white glue sub-layer fits the fluorescent film layer on the side close to the first white glue sub-layer, and the length of the second white glue sub-layer fitting the fluorescent film layer is 1 / 3 - 2 / 3 of the fluorescent film layer.

[0012] According to one aspect of the above technical solution, the transparent glue layer covers the first white glue sub-layer. The structure of the first white glue sub-layer on the side close to the transparent glue layer is inclined and convex in an arc shape, and the height of the first white glue sub-layer gradually increases from the side close to the LED chip to the side away from the LED chip.

[0013] According to one aspect of the above technical solution, the structure of the transparent glue layer on the side close to the first white glue sub-layer is inclined and concave in an arc shape, and its radian angle is 25° - 30°. The height of the transparent glue layer gradually decreases from the side close to the LED chip to the side away from the LED chip, and the width of the transparent glue layer is 270 μm - 330 μm.

[0014] According to one aspect of the above technical solution, the end face of the transparent glue layer away from the LED chip is flush with the two end faces of the fluorescent film layer.

[0015] On the other hand, the present invention aims to provide a method for manufacturing a light-emitting LED device, which is used to manufacture the above-mentioned light-emitting LED device, and the manufacturing method includes:

[0016] Bond the LED chip to the substrate, apply the transparent glue around the LED chip, and bake to obtain a transparent glue layer;

[0017] Cover a solid phosphor sheet on the LED chip and the transparent glue layer, and bake to obtain a phosphor film layer;

[0018] Utilize the siphon effect to fill white glue to a preset height on the side of the transparent glue layer, and draw lines with the white glue to form a white glue layer. The white glue layer includes a first white glue sub-layer and a second white glue sub-layer connected to the first white glue sub-layer. The first white glue sub-layer adheres to the transparent glue layer, and the structure of the second white glue sub-layer on the side away from the substrate is concave in the middle;

[0019] Cover a lens glue layer on the second white glue sub-layer and the phosphor film layer.

[0020] Further, the baking conditions of the transparent glue layer are:

[0021] First baking: Bake at 70 °C to 90 °C for 20 min to 40 min;

[0022] Second baking: Bake at 140 °C to 160 °C for 110 min to 130 min;

[0023] After the baking is completed, the side of the transparent glue layer away from the LED chip forms a structure with an inclined concave arc.

[0024] Further, the baking conditions of the phosphor film layer are: Bake at 140 °C to 160 °C for 50 min to 70 min.

[0025] Further, the preset height is 1 / 3 to 2 / 3 of the phosphor film layer, the height difference of the structure with the concave middle is 180 μm to 220 μm, and the height of the vertical cross-section of the side of the lens glue layer is 90 μm - 120 μm. Description of the Drawings

[0026] The above and / or additional aspects and advantages of the present invention will become obvious and easy to understand from the description of the embodiments in conjunction with the following drawings, where:

[0027] Figure 1 is a schematic structural diagram of the light-emitting LED device of the present invention;

[0028] Figure 2 is a flowchart of the method for manufacturing the light-emitting LED device of the present invention;

[0029] Explanation of the symbols of the components in the drawings:

[0030] Substrate 10, LED chip 20, transparent adhesive layer 30, fluorescent film layer 40, white adhesive layer 50, first white adhesive sub-layer 51, second white adhesive sub-layer 52, lens adhesive layer 60. Detailed implementation manners

[0031] In order to make the objectives, features and advantages of the present invention more obvious and understandable, the following will describe in detail the specific implementation manners of the present invention with reference to the accompanying drawings. Several embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0032] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there can also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "left", "right", "up", "down" and similar expressions used herein are only for the purpose of illustration and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation of the present invention.

[0033] In the present invention, unless otherwise clearly defined and limited, the terms "installed", "connected", "connected", "fixed", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0034] Please refer to Figure 1 , which shows a light-emitting LED device provided by the present invention. The light-emitting LED device includes:

[0035] Substrate 10, LED chip 20, fluorescent film layer 40, lens adhesive layer 60, transparent adhesive layer 30, white adhesive layer 50;

[0036] The LED chip 20 is bonded to the substrate 10. A transparent adhesive layer 30 is provided on the side wall of the LED chip 20. The upper surface of the transparent adhesive layer 30 is flush with the upper surface of the LED chip 20 to form a plane for carrying the fluorescent film layer 40. The white adhesive layer 50 is provided on the side of the transparent adhesive layer 30 away from the LED chip 20. A hemispherical lens adhesive layer 60 covers the white adhesive layer 50 and the fluorescent film layer 40.

[0037] The white adhesive layer 50 includes a first white adhesive sub-layer 51 and a second white adhesive sub-layer 52 connected to the first white adhesive sub-layer 51. The lens adhesive layer 60 covers the second white adhesive sub-layer 52. The structure of the second white adhesive sub-layer 52 on the side close to the lens adhesive layer 60 is recessed in the middle.

[0038] Further, the white adhesive layer 50 is provided on the substrate 10. The first white adhesive sub-layer 51 is attached to the transparent adhesive layer 30, that is, the transparent adhesive layer 30 covers the first white adhesive sub-layer 51. The structure of the first white adhesive sub-layer 51 on the side close to the transparent adhesive layer 30 is an inclined outward convex arc. The height of the first white adhesive sub-layer 51 gradually increases from the side close to the LED chip 20 to the side away from the LED chip 20.

[0039] Similarly, the structure of the transparent adhesive layer 30 on the side close to the first white adhesive sub-layer 51 is an inclined inward concave arc. The height of the transparent adhesive layer 30 gradually decreases from the side close to the LED chip 20 to the side away from the LED chip 20.

[0040] It should be noted that through the cooperative setting of the transparent adhesive layer 30 and the first white adhesive sub-layer 51, the light of the LED chip 20 passes through the transparent adhesive layer 30 and is reflected onto the fluorescent film layer 40 on the inclined outward convex arc structure of the first white adhesive sub-layer 51, realizing primary light guiding and improving the light efficiency.

[0041] Preferably, the radian angle of the inclined inward concave arc is 25° - 30°, for example, it can be 25°, 26°, 27°, 28°, 29° or 30°, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable. When the radian angle is too large, most of the light emitted by the LED chip 20 will be reflected back inside the LED chip 20, resulting in poor light guiding effect. When the radian angle is too small, the light will be reflected to the edge position, making the light source distribution uneven, thus resulting in a decrease in the overall light efficiency.

[0042] Preferably, the width of the transparent adhesive layer 30 is 270μm - 330μm, for example, it can be 270μm, 280μm, 290μm, 300μm, 310μm, 320μm or 330μm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0043] Furthermore, the end face of the transparent adhesive layer 30 away from the LED chip 20 is flush with both end faces of the fluorescent film layer 40. The fluorescent film covers the transparent adhesive layer 30 and the two end faces are flush, so as to make the fluorescent film layer 40 stable and better convert and scatter light.

[0044] In addition, the second white glue sub-layer 52 adheres to the fluorescent film layer 40 on the side close to the first white glue sub-layer 51.

[0045] Preferably, the length of the second white glue sub-layer 52 adhering to the fluorescent film layer 40 is 1 / 3 to 2 / 3 of the fluorescent film layer 40. For example, it can be 1 / 3, 1 / 2 or 2 / 3, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0046] Wherein, the middle part of the second white glue sub-layer 52 is recessed with a height difference of 180 μm to 220 μm, and the radian angle is, and the width of the second white glue sub-layer 52 is. For example, it can be 180 μm, 190 μm, 200 μm, 210 μm or 220 μm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0047] In addition, the angles of the two sides of the second white glue sub-layer 52 bulging are 42° to 45°, and the width of the second white glue sub-layer 52 is 880 μm to 920 μm.

[0048] It should be noted that the light emitted from the side of the LED chip 20 through the fluorescent film layer 40 is reflected to the middle of the lens adhesive layer 60 by the recessed structure in the middle of the second white glue sub-layer 52, reducing the light output at the edge, realizing secondary light guiding, and improving the light efficiency. Then, the hemispherical lens adhesive layer 60 further converges the light to realize three - time light guiding and further improve the light efficiency.

[0049] In addition, the recessed setting in the middle of the second white glue sub-layer 52 will increase the contact area with the lens adhesive layer 60, improve the adhesion force, reduce the probability of the lens adhesive layer 60 falling off, and improve the service life and stability of the light - emitting device.

[0050] Preferably, the height of the vertical cross - section of the side of the lens adhesive layer is 90 μm to 120 μm. For example, it can be 90 μm, 100 μm, 110 μm or 120 μm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0051] Correspondingly, please refer to Figure 2 , the present invention also provides a preparation method of a light - emitting LED device, and the preparation method includes steps S10 - step S13,

[0052] Step S10: Bond the LED chip to the substrate, apply the transparent glue around the LED chip in a circular pattern, and bake to obtain a transparent glue layer.

[0053] Among them, the transparent glue adheres to the substrate through a double-sided adhesive. The double-sided adhesive includes a transparent release film, a first adhesive film, a PET substrate layer, a second adhesive film, and a blue release film from top to bottom. The thickness of the first adhesive film is 10μm - 20μm, the thickness of the second adhesive film is 20μm - 30μm, and the thickness of the PET substrate layer is 70μm - 80μm.

[0054] Specifically, control the radian angle of the structure with an inclined concave arc set for the transparent glue layer according to the viscosity of the double-sided adhesive, the amount of glue applied, and the baking conditions.

[0055] In addition, the transparent glue is applied around the LED chip in a circular pattern in the counterclockwise direction.

[0056] The baking conditions for the transparent glue layer are as follows:

[0057] First baking: Bake at 70°C - 90°C for 20min - 40min;

[0058] Second baking: Bake at 140°C - 160°C for 110min - 130min;

[0059] Among them, low-temperature baking is beneficial for forming, and high-temperature baking is beneficial for curing.

[0060] After baking, a structure with an inclined concave arc is formed on the side of the transparent glue layer away from the LED chip.

[0061] In addition, the method further includes:

[0062] Adhere the LED chip to the substrate through solder paste, and then weld the LED chip to the substrate through the operations of core fixing and reflow soldering to reduce the void ratio, ensure good heat conduction and electrical connection, reduce performance loss, and the void ratio is less than 2%.

[0063] Then use plasma cleaning to remove surface contaminants, and the water contact angle is less than 40°, which is beneficial for the subsequent attachment of packaging materials.

[0064] Step S11: Cover the solid fluorescent sheet on the LED chip and the transparent glue layer, and bake to obtain a fluorescent film layer.

[0065] Among them, the baking conditions for the fluorescent film layer are: Bake at 140°C - 160°C for 50min - 70min. Baking helps to cure the fluorescent film layer and enhance the stability of the fluorescent film layer and the light-emitting LED device structure.

[0066] Step S12: Utilize the siphon effect to fill white glue to a preset height on the side of the transparent glue layer. The white glue is scribed to form a white glue layer. The white glue layer includes a first white glue sub-layer and a second white glue sub-layer connected to the first white glue sub-layer. The first white glue sub-layer adheres to the transparent glue layer, and the structure of the second white glue sub-layer on the side away from the substrate is concave in the middle.

[0067] Among them, the preset height is 1 / 3 - 2 / 3 of the height reaching the fluorescent film layer, and the height difference of the structure with the concave middle setting is 180μm - 220μm.

[0068] The scribing of the white glue forms a second white glue sub-layer with raised sides and a concave middle in the spacing between the LED chips.

[0069] Step S13: Cover a lens glue layer on the second white glue sub-layer and the fluorescent film layer.

[0070] Among them, the height of the vertical cross-section of the side of the lens glue layer is 90μm - 120μm, which improves the light efficiency.

[0071] Specifically, utilize Molding, that is, the molding process, to cover a lens glue layer on the second white glue sub-layer and the fluorescent film layer. After cutting, a lens glue layer with a vertical cross-section height of 90μm - 120μm on the side is formed.

[0072] Next, the technical solution of the present invention will be described in detail with specific embodiments.

[0073] Embodiment 1

[0074] The first embodiment of the present invention provides a light-emitting LED device, which includes:

[0075] A substrate, an LED chip, a fluorescent film layer, a lens glue layer, a transparent glue layer, and a white glue layer;

[0076] The LED chip is bonded to the substrate. The side wall of the LED chip is provided with the transparent glue layer. The upper surface of the transparent glue layer is flush with the upper surface of the LED chip to form a plane for carrying the fluorescent film layer. The transparent glue layer is provided with the white glue layer on the side away from the LED chip. A hemispherical lens glue layer is covered on the white glue layer and the fluorescent film layer.

[0077] The white glue layer includes a first white glue sub-layer and a second white glue sub-layer connected to the first white glue sub-layer. The lens glue layer is covered on the second white glue sub-layer. The structure of the second white glue sub-layer on the side close to the lens glue layer is concave in the middle.

[0078] Further, a white glue layer is provided on the substrate, and the first white glue sub-layer adheres to the transparent glue layer, that is, the transparent glue layer covers the first white glue sub-layer. The structure of the first white glue sub-layer on the side close to the transparent glue layer is inclined and convex arc-shaped, and the height of the first white glue sub-layer gradually increases from the side close to the LED chip to the side far from the LED chip.

[0079] Similarly, the structure of the transparent glue layer on the side close to the first white glue sub-layer is inclined and concave arc-shaped, and the height of the transparent glue layer gradually decreases from the side close to the LED chip to the side far from the LED chip.

[0080] Preferably, the radian angle of the inclined and concave arc-shaped setting is 25° - 30°, and the width of the transparent glue layer is 300 μm.

[0081] Further, the end face of the transparent glue layer far from the LED chip is flush with the two end faces of the fluorescent film layer. In addition, the second white glue sub-layer adheres to the fluorescent film layer on the side close to the first white glue sub-layer.

[0082] Preferably, the length of the second white glue sub-layer adhering to the fluorescent film layer is 1 / 2 of the fluorescent film layer.

[0083] Wherein, the middle part of the second white glue sub-layer is concave downward with a height difference of 180 μm - 220 μm. The angles of the two sides of the second white glue sub-layer 52 bulging are 42° - 45°, the width of the second white glue sub-layer 52 is 880 μm - 920 μm, and preferably, the height of the side vertical section of the lens glue layer is 100 μm.

[0084] Correspondingly, this embodiment also provides a preparation method of a light-emitting LED device. The preparation method includes steps S10 - step S13.

[0085] Step S10, bond the LED chip to the substrate, apply the transparent glue around the LED chip, and bake to obtain the transparent glue layer.

[0086] The baking conditions of the transparent glue layer are:

[0087] Primary baking: Bake at 80°C for 30 min.

[0088] Secondary baking: Bake at 150°C for 120 min.

[0089] After baking, the structure of the transparent glue layer on the side far from the LED chip forms an inclined and concave arc-shaped setting.

[0090] Step S11, cover the solid fluorescent sheet on the LED chip and the transparent glue layer, and bake to obtain the fluorescent film layer.

[0091] Among them, the baking conditions of the fluorescent film layer are: baking at 150 °C for 60 min.

[0092] Step S12: Use the siphon effect to fill white glue to a preset height on the side of the transparent glue layer, and draw a line with the white glue to form a white glue layer. The white glue layer includes a first white glue sub-layer and a second white glue sub-layer connected to the first white glue sub-layer. The first white glue sub-layer adheres to the transparent glue layer, and the structure of the second white glue sub-layer on the side away from the substrate is concave in the middle.

[0093] Among them, the preset height is 1 / 2 of the height reaching the fluorescent film layer, and the height difference of the concave structure in the middle is 200 μm.

[0094] Drawing a line with white glue means drawing a line in the LED chip pitch to form a second white glue sub-layer with bulges on both sides and a concave in the middle.

[0095] Step S13: Cover a lens glue layer on the second white glue sub-layer and the fluorescent film layer.

[0096] Among them, the vertical cross-sectional height of the side of the lens glue layer is 100 μm, which improves the light efficiency.

[0097] Comparative Example 1

[0098] A light-emitting LED device provided by the first comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is that:

[0099] The radian angle of the inclined concave arc setting is 20° to 25°, and the height difference of the concave setting in the middle of the second white glue sub-layer is 150 μm to 180 μm.

[0100] Comparative Example 2

[0101] A light-emitting LED device provided by the second comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is that:

[0102] The radian angle of the inclined concave arc setting is 20° to 25°.

[0103] Comparative Example 3

[0104] A light-emitting LED device provided by the third comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is that:

[0105] The radian angle of the inclined concave arc setting is 20° to 25°, and the height difference of the concave setting in the middle of the second white glue sub-layer is 220 μm to 250 μm.

[0106] Comparative Example 4

[0107] A light-emitting LED device provided in the fourth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0108] The middle part of the second white glue layer is recessed downward with a height difference of 150 μm to 180 μm.

[0109] Comparative Example Five

[0110] A light-emitting LED device provided in the fifth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0111] The middle part of the second white glue layer is recessed downward with a height difference of 220 μm to 250 μm.

[0112] Comparative Example Six

[0113] A light-emitting LED device provided in the sixth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0114] The radian angle of the inclined concave arc setting is 30° to 35°, and the middle part of the second white glue layer is recessed downward with a height difference of 150 μm to 180 μm.

[0115] Comparative Example Seven

[0116] A light-emitting LED device provided in the seventh comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0117] The radian angle of the inclined concave arc setting is 30° to 35°.

[0118] Comparative Example Eight

[0119] A light-emitting LED device provided in the eighth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0120] The radian angle of the inclined concave arc setting is 30° to 35°, and the middle part of the second white glue layer is recessed downward with a height difference of 220 μm to 250 μm.

[0121] Comparative Example Nine

[0122] A light-emitting LED device provided in the ninth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0123] The radian angle of the inclined concave arc is 35° to 40°, and the height difference of the middle part of the second white glue layer is 150 μm to 180 μm when it is set to be concave downward.

[0124] Comparative Example Ten

[0125] A light-emitting LED device provided by the tenth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0126] The radian angle of the inclined concave arc is 35° to 40°.

[0127] Comparative Example Eleven

[0128] A light-emitting LED device provided by the eleventh comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0129] The radian angle of the inclined concave arc is 35° to 40°, and the height difference of the middle part of the second white glue layer is 220 μm to 250 μm when it is set to be concave downward.

[0130] Comparative Example Twelve

[0131] A light-emitting LED device provided by the twelfth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0132] The transparent glue layer is not inclined and concave, but is vertically attached to the white glue layer;

[0133] The white glue layer is not indented in the middle and is horizontally attached to the lens glue layer.

[0134] Comparative Example Thirteen

[0135] A light-emitting LED device provided by the thirteenth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0136] The transparent glue layer is not inclined and concave, but is vertically attached to the white glue layer.

[0137] Comparative Example Fourteen

[0138] A light-emitting LED device provided by the fourteenth comparative example of the present invention. The difference between the light-emitting LED device in this comparative example and the light-emitting LED device in the first embodiment is as follows:

[0139] The white glue layer is not indented in the middle and is horizontally attached to the lens glue layer.

[0140] Please refer to Table 1 below, which shows the parameters corresponding to the above-mentioned first embodiment and Comparative Examples 1 to 3 of the present invention.

[0141] Table 1

[0142]

[0143]

[0144] It should be noted that the light-emitting LED devices corresponding to the parameters of Example 1 and Comparative Examples 1 to 14 were fabricated to be 22 mil × 35 mil under the same process conditions. 300 light-emitting LED devices were respectively selected and their performance was tested under a current of 60 mA. Among them, by directly pushing with a push knife on the spherical colloid surface of the lens layer, the force that can push off the colloid was defined as the colloid thrust force.

[0145] From the comparison of Example 1, Comparative Example 4, Comparative Example 5, and Comparative Example 14 in Table 1, the comparison of Comparative Examples 1 to 3, the comparison of Comparative Examples 6 to 8, and the comparison of Comparative Examples 9 to 11, it can be seen that setting a concave in the middle can effectively improve the light efficiency and reduce the probability of the lens glue layer falling off. The greater the height difference of the concave in the middle, the greater the colloid thrust force, the better the stability, and it is not easy to fall off. However, the greater the height difference, the worse the consistency, resulting in uneven distribution of the direction and intensity of the emitted light, causing uneven light intensity distribution.

[0146] From the comparison of Example 1, Comparative Example 2, Comparative Example 7, and Comparative Example 13 in Table 1, the comparison of Comparative Example 1, Comparative Example 4, Comparative Example 6, and Comparative Example 9, and the comparison of Comparative Example 3, Comparative Example 5, Comparative Example 8, and Comparative Example 11, it can be seen that the greater the radian angle of the inclined concave arc setting, the smaller the improvement in light efficiency. However, the smaller the radian angle of the inclined concave arc setting, the longer the length of the inclined concave arc, and the stability is poor during the operation process and it is easy to fall off.

[0147] From the comparison of Example 1, Comparative Example 12, Comparative Example 13, and Comparative Example 14 in Table 1, it can be seen that the solution of Example 1 can effectively improve the light efficiency, reduce the probability of the lens glue layer falling off, and improve the lifespan and stability of the light-emitting device.

[0148] In the description of this specification, the description referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0149] The above-described embodiments merely represent several implementation manners of the present invention. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent for the present invention. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention shall be subject to the appended claims.

Claims

1. A light-emitting LED device, characterized in that, The described light-emitting LED device includes: a substrate, an LED chip, a fluorescent film layer, a lens adhesive layer, a transparent adhesive layer, and a white adhesive layer; The LED chip is bonded to the substrate. The side wall of the LED chip is provided with the transparent adhesive layer. The upper surface of the transparent adhesive layer is flush with the upper surface of the LED chip to form a plane for carrying the fluorescent film layer. The white adhesive layer is provided on the side of the transparent adhesive layer away from the LED chip. A hemispherical lens adhesive layer covers the white adhesive layer and the fluorescent film layer; The white adhesive layer includes a first white adhesive sub-layer and a second white adhesive sub-layer connected to the first white adhesive sub-layer. The lens adhesive layer covers the second white adhesive sub-layer. The structure of the second white adhesive sub-layer on the side close to the lens adhesive layer is concave in the middle.

2. The light-emitting LED device according to claim 1, wherein The height difference of the concave middle part of the second white adhesive sub-layer is 180μm - 220μm, the angles of the raised parts on both sides are 42° - 45°, and the width of the second white adhesive sub-layer is 880μm - 920μm.

3. The light-emitting LED device according to claim 2, wherein The second white adhesive sub-layer adheres to the fluorescent film layer on the side close to the first white adhesive sub-layer, and the length of the second white adhesive sub-layer adhering to the fluorescent film layer is 1 / 3 - 2 / 3 of the fluorescent film layer.

4. The light-emitting LED device according to claim 1, characterized in that, The transparent adhesive layer covers the first white adhesive sub-layer. The structure of the first white adhesive sub-layer on the side close to the transparent adhesive layer is inclined and convex in an arc shape, and the height of the first white adhesive sub-layer gradually increases from the side close to the LED chip to the side away from the LED chip.

5. The light-emitting LED device according to claim 4, wherein The structure of the transparent adhesive layer on the side close to the first white adhesive sub-layer is inclined and concave in an arc shape, with a radian angle of 25° - 30°. The height of the transparent adhesive layer gradually decreases from the side close to the LED chip to the side away from the LED chip, and the width of the transparent adhesive layer is 270μm - 330μm.

6. The light-emitting LED device according to claim 5, characterized in that, The end face of the transparent adhesive layer away from the LED chip is flush with the two end faces of the fluorescent film layer.

7. A method for preparing a light-emitting LED device, characterized in that, The preparation method is used to prepare the light-emitting LED device according to any one of claims 1 - 6. The preparation method includes: Bond the LED chip to the substrate, apply the transparent adhesive around the LED chip, and bake to obtain the transparent adhesive layer; Cover a solid fluorescent sheet on the LED chip and the transparent adhesive layer, and bake to obtain the fluorescent film layer; Utilize the siphon effect to fill white adhesive to a preset height on the side of the transparent adhesive layer, and draw lines with the white adhesive to form the white adhesive layer. The white adhesive layer includes a first white adhesive sub-layer and a second white adhesive sub-layer connected to the first white adhesive sub-layer. The first white adhesive sub-layer adheres to the transparent adhesive layer, and the structure of the second white adhesive sub-layer on the side away from the substrate is concave in the middle; Cover the lens adhesive layer on the second white adhesive sub-layer and the fluorescent film layer.

8. The method for preparing a light-emitting LED device according to claim 7, wherein, The baking conditions of the transparent adhesive layer are: First baking: Bake at 70°C - 90°C for 20min - 40min; Second baking: Bake at 140°C - 160°C for 110min - 130min; After baking, the structure of the transparent adhesive layer on the side away from the LED chip is inclined and concave in an arc shape.

9. The manufacturing method of the light-emitting LED device according to claim 7, wherein The baking conditions of the fluorescent film layer are: baking at 140°C to 160°C for 50 min to 70 min.

10. The manufacturing method of the light-emitting LED device according to claim 7, characterized in that, The preset height is 1 / 3 to 2 / 3 of the height reaching the fluorescent film layer. The height difference of the structure with a concave middle part is 180 μm to 220 μm, and the height of the side vertical cross-section of the lens adhesive layer is 90 μm to 120 μm.

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