Feeding method and system of single crystal furnace, electronic equipment and storage medium

Abstract

The invention provides a feeding method and system of a single crystal furnace, electronic equipment and a storage medium, and the method comprises the following steps: responding to an automatic feeding instruction, and determining whether an isolation valve opening condition is met or not; if not, returning to execute the step of determining whether the opening condition of the isolating valve is met or not; if yes, an isolation valve of the single crystal furnace is controlled to be opened, a feeding structure of the single crystal furnace is driven to reach a throat of the single crystal furnace, and the feeding structure is loaded with the silicon material with the preset weight value; determining whether a feeding condition is met or not; if yes, the feeding structure is controlled to execute a preset round of feeding action; determining whether the currently contained silicon material in the feeding structure is completely fed or not; if the feeding is finished, driving the feeding structure to reset, and controlling the isolating valve to be closed. The automatic silicon material re-feeding process is formed, so that the labor cost is reduced, and the production efficiency of the solar material can be improved.

Description

Technical Field

[0001] The present application relates to the field of automation technology. Specifically, it relates to a feeding method, system, electronic device and storage medium for a single crystal furnace. Background Art

[0002] With the rapid development of the semiconductor industry, the automation requirements of single crystal silicon production enterprises have gradually increased, especially in core process links such as single crystal pulling. Although automation technology has been widely applied in multiple links of single crystal production, the feeding process of the single crystal furnace still highly depends on manual operation and requires manual intervention. This not only increases the labor intensity of operators but also has a potential impact on production efficiency and product quality. Summary of the Invention

[0003] The purpose of the embodiments of the present application is to provide a feeding method, system, electronic device and storage medium for a single crystal furnace, which can reduce the labor cost in the feeding process of single crystal silicon production and improve production efficiency through an automated feeding method for the single crystal furnace.

[0004] In a first aspect, the present invention provides a feeding method for a single crystal furnace. The method includes responding to an automatic feeding instruction and determining whether the isolation valve opening condition is met; if not, returning to execute the step of determining whether the isolation valve opening condition is met; if so, controlling the isolation valve of the single crystal furnace to open and driving the feeding structure of the single crystal furnace to reach the throat of the single crystal furnace, where the feeding structure is loaded with a preset weight value of silicon material; determining whether the feeding condition is satisfied; if satisfied, controlling the feeding structure to perform a preset number of feeding actions; determining whether the silicon material currently accommodated in the feeding structure has been completely discharged; if it has been completely discharged, driving the feeding structure to reset and controlling the isolation valve to close.

[0005] In an optional embodiment, the following method is used to determine whether the isolation valve opening condition is met: An image sensor is arranged in the furnace chamber of the single crystal furnace to collect the image of the silicon material blocks in the crucible heated in the furnace chamber; based on the image of the material blocks, the melting degree value of the silicon material is identified; it is determined whether the fusion degree value is less than the standard degree value; if so, it is determined that the isolation valve opening condition is met; wherein, the standard degree value is determined according to the diameter of the lower opening of the guiding cylinder of the single crystal furnace.

[0006] In an optional embodiment, before the step of controlling the isolation valve of the single crystal furnace to open, it further includes: generating a first control signal and sending it to the crucible driving structure to move the crucible of the single crystal furnace to the finishing position.

[0007] In an optional embodiment, the feeding structure at least includes a feeding cylinder and a quartz umbrella. The following method is used to determine whether the feeding condition is satisfied: Determine whether one end of the charging cylinder is clamped to the flange provided at the throat of the single crystal furnace; if so, determine whether the charging cylinder has remained stationary for a first preset duration; if so, determine that the feeding condition is met.

[0008] In an alternative embodiment, the step of controlling the feeding structure to perform the feeding action for a preset number of rounds specifically includes: Determine the current execution round; drive the quartz umbrella to move to the travel value corresponding to the current execution round; determine whether the quartz umbrella stays at the current travel value for a second preset duration corresponding to the current execution round, and the second preset duration is greater than the first preset duration; if so, increment the execution round by 1, and return to execute the step of determining the current execution round.

[0009] In an alternative embodiment, within the time when the quartz umbrella stays at the current travel value, it further includes: Determine whether the weight value of the silicon material loaded in the feeding structure changes; if not, drive the quartz umbrella to move downward by a preset offset value to increase the opening of the quartz umbrella.

[0010] In an alternative embodiment, it further includes: Determine whether the weight value of the silicon material loaded in the feeding structure changes within a third preset duration, and the third preset duration is less than the second preset duration; if so, drive the quartz umbrella to move upward by a preset offset value to decrease the opening of the quartz umbrella.

[0011] In a second aspect, the present invention provides a feeding system for a single crystal furnace, the system at least includes a single crystal furnace entity and a main controller, and the main controller is used for: Respond to an automatic feeding instruction, determine whether the isolation valve opening condition is met; if not, return to execute the step of determining whether the isolation valve opening condition is met; if so, control the isolation valve of the single crystal furnace to open, and drive the feeding structure of the single crystal furnace to reach the throat of the single crystal furnace, and the feeding structure is loaded with a silicon material of a preset weight value; determine whether the feeding condition is met; if so, control the feeding structure to perform the feeding action for a preset number of rounds; determine whether the silicon material currently accommodated in the feeding structure has been completely discharged; if it has been completely discharged, drive the feeding structure to reset, and control the isolation valve to close.

[0012] In a third aspect, the present invention provides an electronic device, including: a processor, a memory, and a bus, the memory stores machine-readable instructions executable by the processor, when the electronic device runs, the processor communicates with the memory through the bus, and the processor executes the machine-readable instructions to perform the steps of the feeding method of any single crystal furnace in the foregoing embodiments.

[0013] In a fourth aspect, the present invention provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is run by a processor, it performs the steps of the feeding method of any single crystal furnace in the foregoing embodiments.

[0014] A feeding method, system, electronic device and storage medium for a single crystal furnace provided by the present application. Among them, the method includes responding to an automatic feeding instruction to determine whether the isolation valve opening condition is met; if not, returning to execute the step of determining whether the isolation valve opening condition is met; if met, controlling the isolation valve of the single crystal furnace to open, and driving the feeding structure of the single crystal furnace to reach the throat of the single crystal furnace, and the feeding structure is loaded with silicon material with a preset weight value; determining whether the feeding condition is met; if met, controlling the feeding structure to execute a preset number of feeding actions; determining whether the silicon material currently contained in the feeding structure has been completely discharged; if it has been completely discharged, driving the feeding structure to reset, and controlling the isolation valve to close. By forming an automated silicon material refeeding process, the labor cost is reduced, and the production efficiency of solar materials can be improved. Description of the Drawings

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required to be used in the embodiments of the present application. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can also be obtained based on these drawings without creative efforts.

[0016] Figure 1 It is a flowchart of a feeding method for a single crystal furnace provided by an embodiment of the present application; Figure 2 It is a schematic structural diagram of a feeding system for a single crystal furnace provided by an embodiment of the present application; Figure 3 It is a schematic structural diagram of an electronic device provided by an embodiment of the present application. Detailed Embodiments

[0017] The following will describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application.

[0018] Embodiment 1 Figure 1 It is a flowchart of a feeding method for a single crystal furnace provided by an embodiment of the present application. As Figure 1 shown, a feeding method for a single crystal furnace provided by an embodiment of the present application can be executed by the control system of the single crystal furnace, and includes: S1. Respond to the automatic feeding instruction and determine whether the isolation valve opening condition is met.

[0019] After the material barrel of the single crystal furnace is filled with silicon material, an operator can send an automatic feeding instruction through the control terminal to indicate that all the silicon material in the material barrel is to be put into the single crystal furnace through multiple automatic refeedings.

[0020] Here, the control end can be provided with virtual or physical controls to generate an automatic feeding instruction according to the user's triggering operation.

[0021] Before the step of determining whether the isolation valve opening condition is met, it also includes generating a first control signal and sending it to the crucible driving structure to move the crucible of the single crystal furnace to the ending position.

[0022] Before generating the first control signal, it can be determined whether the mass of the silicon material in the barrel is within the specified range, such as 660 kg ± 10 kg. If it is within the specified range, the crucible position can be adjusted to the ending crucible position. For example, control the crucible position to shift upward by 30 mm - 50 mm, and this offset value can be set according to different furnace types and heat fields.

[0023] In a specific embodiment, after the crucible zero position calibration before starting the single crystal furnace, for the current barrel number of materials fed into the single crystal furnace, the corresponding ending position of the crucible is determined. Exemplarily, when feeding the first barrel of materials, the crucible can be driven to the ending crucible position. When feeding the second barrel of materials, the crucible is driven to a position 100 mm downward from the ending crucible position. When feeding the third barrel of materials, the crucible is driven to a position 180 mm downward from the ending crucible position. When feeding the fourth barrel of materials, the crucible is driven to a position 100 mm downward from the ending crucible position. In this way, it can prevent the guiding cylinder from being contaminated with silicon due to inaccurate crucible positioning or the silicon material from punching through the bottom of the pot due to too low crucible position during feeding.

[0024] In step S1, it can be determined whether the isolation valve opening condition is met according to the fusion situation of the material blocks in the crucible, and feeding is carried out to ensure the stability and quality of solar material production.

[0025] Also, the weight value collected by the weight sensor can be obtained to determine whether the feeding structure is stably connected and whether the sensor can operate normally. If there is an abnormality, an alarm needs to be given. The weight sensor here is arranged at the pulling head of the single crystal furnace and is used to measure the total mass of the object pulled by the pulling head. Exemplarily, when the feeding structure is loaded with silicon material and hung on the pulling head through a hook, the weight sensor measures the total weight value of the metal support rod, quartz umbrella, barrel, silicon material, and seed crystal weight.

[0026] S2. If not, return to execute the step of determining whether the isolation valve opening condition is met.

[0027] If the isolation valve opening condition is not met, continue to wait for the material blocks to melt.

[0028] S3. If it is met, control the isolation valve of the single crystal furnace to open, and drive the feeding structure of the single crystal furnace to the throat of the single crystal furnace. The feeding structure is loaded with silicon material of a preset weight value.

[0029] If the isolation valve opening condition is met, a second control signal is generated to drive the feeding structure to descend at a crystal speed (such as 600 mm / min). The feeding structure here at least includes a feeding cylinder, a metal support rod, and a quartz umbrella.

[0030] During the descent of the feeding structure, the weight value collected by the sensor can also be monitored to determine whether the isolation valve is fully opened or abnormal situations such as steel cable winding occur. Exemplarily, during the descent of the feeding structure starting from the set zero position, if the weight value deviation is within ±5 Kg, when the weight value deviation is greater than 5 Kg, the driving of the feeding structure to descend is stopped, and a prompt message is generated, and the operator needs to manually determine the state inside the single crystal furnace. When the feeding structure moves more than 1000 mm away from the set zero position, the monitoring logic can be stopped.

[0031] S4. Determine whether the feeding condition is met.

[0032] In step S4, the following method can be used to determine whether the feeding condition is met: Determine whether one end of the feeding cylinder is clamped to the flange provided at the throat of the single crystal furnace; if so, determine whether the feeding cylinder has remained stationary for a first preset duration; if so, determine that the feeding condition is met.

[0033] When the feeding structure descends to a certain position, one end of the feeding cylinder is clamped to the flange provided at the throat of the single crystal furnace. At this time, the feeding cylinder is stationary and no longer descends. At this time, the quartz umbrella moves normally.

[0034] When it is determined that the feeding cylinder has been stationary for 30 s, it can be determined that the feeding condition is met.

[0035] If not, and the feeding structure continues to descend, the driving needs to be stopped in time and manual intervention is required to prevent the feeding cylinder from punching through the bottom of the crucible.

[0036] Exemplarily, when the feeding structure moves 1000 mm, the weight value collected by the sensor decreases by 80 kg (the weight of the cylinder) and remains for 30 s, then it can be determined that the feeding condition is met.

[0037] Furthermore, the difference in the weight value collected by the sensor should not be greater than 30% of the weight value of the added silicon material or other thresholds to prevent the situation where all the silicon material is put into the crucible. If it occurs, the quartz umbrella needs to be driven to move up in time.

[0038] During the descent of the feeding structure, the current stroke value of the feeding structure, the weight value collected by the sensor, the opening value of the quartz umbrella, etc. can be displayed in real time through the display, so that the operator can discover problems in time and perform manual intervention.

[0039] S5. If it is met, control the feeding structure to perform a preset number of feeding actions.

[0040] In step S5, the step of controlling the feeding structure to perform the feeding action for a preset number of rounds specifically includes: Determine the current execution round; drive the quartz umbrella to move to the travel value corresponding to the current execution round; determine whether the quartz umbrella stays at the current travel value for a second preset duration corresponding to the current execution round, where the second preset duration is greater than the first preset duration; if so, increment the execution round by 1 and return to the step of determining the current execution round.

[0041] After the feeding cylinder stops moving, the quartz umbrella continues to deflect downward, and the deflection amount can be different for each round. In each round, the quartz umbrella deflects downward to a specified position, and at the same time, the silicon material falls. After waiting for a specified time, it deflects upward to reset, and then waits for the next round of feeding.

[0042] S6. Determine whether the silicon material currently contained in the feeding structure has been completely discharged.

[0043] Here, it is possible to determine whether the silicon material in the feeding structure has been completely discharged based on the weight value collected by the weight sensor in the feeding structure. Exemplarily, if the weight value is less than or equal to 50 kg and the weight value does not change within one minute, it can be determined that the discharging is complete.

[0044] S7. If the discharging is complete, drive the feeding structure to reset and control the isolation valve to close.

[0045] After the discharging is complete, the barrel material is automatically lifted out, and the isolation control valve is closed. At this time, the automatic feeding is completed. The rising speed can still be 600 mm / min.

[0046] The feeding method of a single crystal furnace provided by this application only requires one manual operation to automatically complete multiple repeated feedings. Through automated processes such as setting the crucible position, lowering the feeding cylinder, opening the quartz umbrella, and closing the quartz umbrella for repeated silicon material feeding, the labor cost is reduced, and the production efficiency of solar materials can be improved.

[0047] Embodiment 2 In an embodiment of this application, in order to reasonably control the feeding structure to perform the feeding action for a preset number of rounds, five process parameters can be configured for the automatic feeding and repeated feeding, including the opening degree of the English umbrella, the duration of the quartz umbrella opening degree, the downward deflection amount of the quartz umbrella, the upward deflection amount of the quartz umbrella, and the waiting time after feeding is completed. These parameters need to be obtained through empty furnace experiments before production.

[0048] In a specific embodiment, the process parameters can be configured as shown in Table 1 below.

[0049] Table 1

[0050] It should be noted that before each round of feeding, the opening value of the quartz umbrella needs to be reset to zero, which can avoid the actual opening value of the quartz umbrella not matching the set opening value. Here, the opening value of the quartz umbrella is the distance value between the quartz umbrella and the other end of the feeding cylinder.

[0051] Furthermore, in order to ensure that the silicon material can fall normally, the opening of the quartz umbrella can also be monitored.

[0052] During the time when the quartz umbrella stays at the current stroke value, determine whether the weight value of the silicon material loaded in the feeding structure changes; if it does not change, drive the quartz umbrella to move downward by a preset offset value to increase the opening of the quartz umbrella.

[0053] This can avoid silicon material getting stuck and blocking the opening between the quartz umbrella and the barrel, affecting the falling of the silicon material.

[0054] And determine whether the weight value of the silicon material loaded in the feeding structure changes within a third preset time period, where the third preset time period is less than the second preset time period; if so, drive the quartz umbrella to move upward by a preset offset value to reduce the opening of the quartz umbrella.

[0055] If the opening of the quartz umbrella is too large and the sensor weight changes suddenly in a short time, it can be considered that the silicon material is fed too fast. At this time, the quartz umbrella should be driven to move upward to protect the silicon material below.

[0056] It should be noted that taking the opening value of the quartz umbrella as 15 mm as an example, if the sensor weight value changes suddenly in a short time, the quartz umbrella needs to be driven to move up 2 mm. When the re-feeding of this round is completed, if the waiting time is reached or the feeding quality reaches the specified value, the operation can continue from the next round, that is, drive the quartz umbrella to move to the opening value of 18 mm.

[0057] Embodiment III In an embodiment of the present application, after each cylinder of feeding is completed, the power of the furnace platform heater can also be automatically set to heat the crucible.

[0058] Specifically, the power of the heater can be set according to the number of cylinders of feeding. When feeding the first cylinder, the seeding power +10 Kw and the bottom power 70 Kw can be set first. After melting the material for one hour, increase the power to melt the material until the main power and the bottom power reach 190 Kw. When feeding the second and third cylinders, the seeding power +10 Kw and the bottom power 60 Kw can be set first. After melting the material for one hour, increase the power to melt the material until the main power and the bottom power reach 190 Kw. After melting and returning the material or according to the size of the melted material, determine whether to re-feed. When feeding the fourth cylinder, the main power and the bottom power can be set to reach 190 Kw.

[0059] If the furnace heater cannot reach the specified power, heater abnormal information can be generated and an alarm can be given. At this time, the main heater power and the bottom heater power can be set according to the following parameters: 120 Kw + 70 Kw, 110 Kw + 80 Kw, 105 Kw + 85 Kw. If these parameters still cannot be satisfied, manual intervention can be prompted. These abnormal information and warning information can be displayed through a display or voice broadcast, etc.

[0060] In this way, stable heating of the silicon material can be ensured, and the production quality and efficiency can be improved.

[0061] Embodiment 4 As Figure 2 shown, based on the same inventive concept, an input system for a single crystal furnace is further provided in an embodiment of the present application. The system at least includes a single crystal furnace entity and a main controller, and the main controller is used for: Responding to an automatic feeding instruction, determining whether the isolation valve opening condition is met; if not, returning to execute the step of determining whether the isolation valve opening condition is met; if so, controlling the isolation valve of the single crystal furnace to open, and driving the feeding structure of the single crystal furnace to reach the throat of the single crystal furnace, and the feeding structure is loaded with silicon material of a preset weight value; determining whether the feeding condition is met; if so, controlling the feeding structure to perform a preset number of feeding actions; determining whether the silicon material currently accommodated in the feeding structure has been completely fed; if it has been completely fed, driving the feeding structure to reset, and controlling the isolation valve to close.

[0062] The main controller here can be used to execute a feeding method for a single crystal furnace proposed in the foregoing embodiment, achieving the same technical effects, which will not be elaborated here.

[0063] Please refer to Figure 3 , Figure 3 which is a schematic structural diagram of an electronic device provided in an embodiment of the present application. As Figure 3 shown in, the electronic device 300 includes a processor 310, a memory 320, and a bus 330.

[0064] The memory 320 stores machine-readable instructions executable by the processor 310. When the electronic device 300 runs, the processor 310 communicates with the memory 320 through the bus 330. When the machine-readable instructions are executed by the processor 310, the steps of a feeding method for a single crystal furnace in the above method embodiment can be executed. The specific implementation manner can be seen in the method embodiment and will not be elaborated here.

[0065] The embodiments of the present application also provide a computer-readable storage medium, on which a computer program is stored. When the computer program is run by a processor, it can execute the steps of a feeding method for a single crystal furnace as described in the above method embodiments. For the specific implementation manners, reference can be made to the method embodiments and will not be elaborated herein.

[0066] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0067] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only illustrative. For example, the division of the units is only a logical functional division, and there can be other division manners in actual implementation. For another example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections to each other can be through some communication interfaces. The indirect couplings or communication connections of the devices or units can be in electrical, mechanical, or other forms.

[0068] In addition, the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0069] Furthermore, in each embodiment of the present application, the functional modules can be integrated together to form an independent part, or each module can exist alone, or two or more modules can be integrated to form an independent part.

[0070] It should be noted that if a function is implemented in the form of a software functional module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in various embodiments of the present application. The aforementioned storage medium includes: various media that can store program codes, such as USB flash drives, mobile hard disks, read-only memories (ROMs), random access memories (RAMs), magnetic disks, or optical discs.

[0071] In this text, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0072] The above are only the embodiments of the present application and are not used to limit the protection scope of the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A feeding method for a single crystal furnace, characterized in that, The method includes: In response to an automatic feeding instruction, determining whether the isolation valve opening condition is met; If not, return to execute the step of determining whether the isolation valve opening condition is met; If met, control the isolation valve of the single crystal furnace to open, and drive the feeding structure of the single crystal furnace to reach the throat of the single crystal furnace, and the feeding structure is loaded with silicon material of a preset weight value; Determine whether the feeding condition is satisfied; If satisfied, control the feeding structure to perform a preset number of rounds of feeding actions; Determine whether the silicon material currently contained in the feeding structure has been completely discharged; If completely discharged, drive the feeding structure to reset, and control the isolation valve to close.

2. The method according to claim 1, wherein Determine whether the isolation valve opening condition is met in the following way: Collect the image of the silicon material blocks in the crucible in the furnace chamber through an image sensor arranged in the furnace chamber of the single crystal furnace; Based on the image of the silicon material blocks, identify the melting degree value of the silicon material; Determine whether the fusion degree value is less than the standard degree value; If so, determine that the isolation valve opening condition is met; Among them, the standard degree value is determined according to the diameter of the lower opening of the guide cylinder of the single crystal furnace.

3. The method according to claim 1, wherein Before the step of controlling the isolation valve of the single crystal furnace to open, it further includes: Generate a first control signal and send it to the crucible driving structure to move the crucible of the single crystal furnace to the finishing position.

4. The method according to claim 1, wherein The feeding structure at least includes a feeding cylinder and a quartz umbrella. Determine whether the feeding condition is satisfied in the following way: Determine whether one end of the feeding cylinder is clamped with the flange arranged at the throat of the single crystal furnace; If so, determine whether the feeding cylinder has remained in a stationary state for a first preset duration; If so, determine that the feeding condition is satisfied.

5. The method according to claim 2, wherein The step of controlling the feeding structure to perform a preset number of rounds of feeding actions specifically includes: Determine the current execution round; Drive the quartz umbrella to move to the stroke value corresponding to the current execution round; Determine whether the quartz umbrella stays at the current stroke value for a second preset duration corresponding to the current execution round, and the second preset duration is greater than the first preset duration; If so, increment the execution round by 1, and return to execute the step of determining the current execution round.

6. The method according to claim 5, characterized in that, During the time when the quartz umbrella stays at the current stroke value, it further includes: Determine whether the weight value of the silicon material loaded in the feeding structure changes; If not, drive the quartz umbrella to move downward by a preset offset value to increase the opening degree of the quartz umbrella.

7. The method according to claim 6, characterized in that It further includes: Determine whether the weight value of the silicon material loaded in the feeding structure changes within a third preset duration, and the third preset duration is less than the second preset duration; If so, drive the quartz umbrella to move upward by a preset offset value to reduce the opening degree of the quartz umbrella.

8. A feeding system for a single crystal furnace, characterized in that, The system at least includes a single crystal furnace entity and a main controller, and the main controller is used for: In response to an automatic feeding instruction, determining whether the isolation valve opening condition is met; If not, return to execute the step of determining whether the isolation valve opening condition is met; If met, control the isolation valve of the single crystal furnace to open, and drive the feeding structure of the single crystal furnace to reach the throat of the single crystal furnace, and the feeding structure is loaded with silicon material of a preset weight value; Determine whether the feeding condition is satisfied; If satisfied, control the feeding structure to perform a preset number of rounds of feeding actions; Determine whether the silicon material currently contained in the feeding structure has been completely discharged; If completely discharged, drive the feeding structure to reset, and control the isolation valve to close.

9. An electronic device, characterized in that, It includes: A processor, a memory, and a bus, wherein the memory stores machine-readable instructions executable by the processor. When the electronic device is running, the processor communicates with the memory via the bus, and the processor executes the machine-readable instructions to perform the steps of the single crystal furnace feeding method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, A computer program is stored on the computer-readable storage medium, and when the computer program is run by a processor, it performs the steps of the single crystal furnace feeding method according to any one of claims 1 to 7.

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