Gas distributor and flow calibrator

Abstract

Apparatus and methods for dispensing and mixing gases are provided. In an example, a gas distributor includes a body, a gas inlet for enabling gas to enter the body, a gas outlet for distributing the gas to an array of tracks of an external component, and a central gas distribution point disposed within the body centrally of the array of tracks of gas outlets, and in fluid communication with the gas outlet of the array of tracks.

Description

This application is a divisional application of the application with the application number 201980048175.0, the filing date of July 18, 2019, and the invention title of "Gas Distributor and Flow Verifier". Priority Claim

[0001] This application claims priority to U.S. Patent Application No. 16 / 040,132, filed on July 19, 2018, in the names of Taskar et al. and entitled "Gas Distributor and Flow Verifier", the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] The present disclosure generally relates to gas distributors and flow verifiers, and in one example, to an orbital gas distributor or diverter having an orbital array of gas outlets, nozzles, or orifices arranged to surround a central gas distribution point. Background Art

[0003] The background description provided herein is for the purpose of generally presenting the background of the present disclosure. The work of the currently named inventors is neither expressly nor implicitly admitted to be prior art to the present disclosure to the extent that it is described in this background art section and in various aspects of the specification that could not be determined to be prior art at the time of filing the application.

[0004] Typical plasma etching equipment includes a reactor in which there is a chamber through which one or more reaction gases flow. In semiconductor processing, the etch or deposition rate uniformity across a wafer during an etching process directly affects device yield. Uniformity becomes one of the primary qualification requirements for a process reactor and is thus considered a very important parameter during the design and development of the reactor.

[0005] In a plasma etching reactor, the uniformity of etching parameters (such as etch rate, profile, lateral dimensions, etc.) is affected by several parameters. One of these parameters is the content and delivery of the plasma gas composition. For improving uniformity, it has become increasingly important to provide a consistent plasma discharge and plasma chemistry above the wafer while maintaining uniform gas mixing and distribution with improved instantaneous reactions. Summary of the Invention

[0006] In some examples, a gas distributor includes: a body; a gas inlet for enabling gas to enter the body; an orbital array of gas outlets for distributing the gas to an external component; and a central gas distribution point disposed within the body at the center of the orbital array of gas outlets and in fluid communication with the orbital array of gas outlets.

[0007] In some examples, the gas outlets of the track array are radially and equidistantly spaced around the central gas distribution point. In some examples, the body includes an internal gas conduit that connects the central gas distribution point to the gas outlets of the track array. In some examples, the respective gas flow paths of the internal gas conduit from the central gas distribution point to the gas outlets of the track array are equal in length. In some examples, each gas outlet includes an orifice sized such that a predetermined gas flow rate can pass through the gas outlet or the predetermined gas flow rate through the gas outlet can be adjusted. In some examples, the body includes mounting locations for respective control valves or nozzles such that a predetermined gas flow rate can exit the gas outlet or the predetermined gas flow rate exiting the gas outlet can be adjusted. In some examples, each of the control valves or nozzles includes an orifice.

[0008] In some examples, the gas distributor further includes the control valve or nozzle. In some examples, the control valve or nozzle is replaceable. In some examples, the control valve or nozzle is configured in a horizontal orientation or a vertical orientation. In some examples, the orifice associated with the first control valve or nozzle is sized differently from the orifice associated with the second control valve or nozzle. In some examples, the central gas distribution point includes a volume having a substantially spherical shape. In some examples, one or more pressure gauges measure or verify the gas flow rate of the gas flowing through the gas outlets of the track array. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Some embodiments are shown by way of example and not limitation in the views of the drawings:

[0010] Figure 1 is a schematic view of a reaction chamber to which some embodiments of the present gas distributor can be applied.

[0011] Figure 2 is a pattern view of a portion of a gas distributor according to an exemplary embodiment.

[0012] Figure 3 is Figure 2 a partial cross-sectional view of the portion of the gas distributor shown in

[0013] Figure 4 is Figure 2-3 an upper partial cross-sectional view of the portion of the gas distributor shown in

[0014] Figure 5 is Figure 2 a pattern view of the portion of the gas distributor shown in

[0015] Figure 6Schematic diagram of an array of tracks of a gas outlet nozzle according to an exemplary embodiment.

[0016] Figure 7A-7B Shows aspects of a gas outlet according to an exemplary embodiment, which includes a "flow rate" orifice for restricting or verifying the gas flow leaving the gas dispenser.

[0017] Figure 8A-8C Shows aspects of a gas outlet according to an exemplary embodiment, which includes a "flow rate" orifice for restricting or verifying the gas flow leaving the gas dispenser.

[0018] Figure 9 Shows aspects of a gas outlet according to an exemplary embodiment, which includes a "flow rate" orifice for restricting or verifying the gas flow leaving the gas dispenser.

[0019] Figure 10 Is a flowchart showing operations in a method of dispensing gas according to an exemplary embodiment.

[0020] Figure 11 Is a block diagram illustrating an example of a machine by which one or more exemplary method embodiments may be implemented or controlled. Detailed Description

[0021] The following description includes systems, methods, techniques, instruction sequences, and computer program products that implement illustrative embodiments of the subject matter of the present invention. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the exemplary embodiments. However, it will be apparent to one of ordinary skill in the art that the embodiments may be practiced without these specific details.

[0022] Portions of the disclosure of this patent document contain material that is subject to copyright protection. The copyright owner does not object to anyone faxing a reproduction of the patent document or patent disclosure as it appears in the patent and trademark office patent file or records, but reserves all copyrights otherwise. The following notice applies to any data in the drawings described below and forming a part of this document: Copyright Lam Research Corporation, 2018, All Rights Reserved.

[0023] As also mentioned above, typical plasma etching equipment includes a reactor in which there is a chamber through which one or more reactive gases flow. Inside the chamber, the gas is typically ionized into a plasma by radio frequency energy. The highly reactive ions of the plasma gas react with a specific material, such as a polymer mask on the surface of a semiconductor wafer to be processed into an integrated circuit (IC). Before etching, the wafer is placed in the chamber and held in place by a chuck or a retainer, with the top surface of the wafer exposed to the plasma gas.

[0024] There are several types of chucks known in the art. The chuck provides an isothermal surface and acts as a heat sink for the wafer. In one type, the semiconductor wafer is held in place in a mechanically clamped manner for etching. In another type of chuck, the semiconductor wafer is held in place by an electrostatic force generated by an electric field between the chuck and the wafer. The present disclosure can be applied to both types of chucks or other types of chucks.

[0025] In semiconductor processing, the etch or deposition rate uniformity across the entire wafer during an etching process directly affects device yield. The above-mentioned uniformity becomes one of the main qualification requirements for a process reactor and is thus regarded as a very important parameter during the design and development of the reactor. With each increase in the wafer diameter size, the problem of ensuring the uniformity of each batch of ICs in an increasingly large wafer becomes more difficult. For example, when the wafer size increases from 200 mm to 300 mm and the size of the devices on each wafer is smaller, the edge exclusion portion shrinks to, for example, 2 mm or less. Therefore, it becomes very important to maintain a uniform etch rate, device profile, and desired dimensions all the way up to 2 mm or less from the wafer edge.

[0026] In a plasma etching reactor, the uniformity of etching parameters (such as etch rate, profile, CD, etc.) is affected by several parameters. One of these parameters is the composition content and delivery of the plasma gas. For improving wafer uniformity, it has become more important to maintain uniform gas mixing and distribution upstream of the reactor and to provide a consistent plasma discharge and plasma chemistry above the wafer.

[0027] Figure 1 A schematic diagram of a reaction chamber to which some embodiments of the present gas distributor can be applied. Figure 1A capacitive coupled plasma processing chamber 100 is illustrated, which represents an exemplary plasma processing chamber of a type for etching a substrate. The chamber 100 includes a chuck 102 representative of a workpiece holder, on which a substrate such as a wafer 104 is positioned during etching. The chuck 102 can be implemented by any suitable clamping technique, such as by electrostatic, mechanical, clamping, vacuum, etc. During etching, generally a dual RF frequency (low frequency and high frequency) is supplied to the chuck 102. For example, during etching, 2 MHz and 27 MHz are supplied simultaneously through a dual-frequency source 106.

[0028] The upper electrode 108 is located above the wafer 104 and the upper electrode 108 is grounded. Figure 1 An etching reactor is illustrated, in which the surface of the upper electrode 108 is larger than the surfaces of the chuck 102 and the wafer 104. During etching, the plasma 110 is formed by an etchant source gas supplied through a mixed gas line 112 and exhausted through an exhaust line 114. Inside the chamber 100, the mixed gas line 112 can be connected to a showerhead (not shown). The upstream mixing and distribution of the gas outside the chamber 100 are discussed in more detail below.

[0029] An electrically insulating ring 109 insulates the upper electrode 108 from the grounded chamber 100. A confinement ring 116 can be placed between the upper electrode 108 and a lower electrode such as Figure 1 the chuck 102 in. Generally, the confinement ring 116 helps to confine the etching plasma 110 in the region above the wafer 104 to improve process control and ensure repeatability.

[0030] When RF power is supplied from the dual-frequency power source 106 to the chuck 102, equipotential field lines are established on the wafer 104. The equipotential field lines are the electric field lines throughout the plasma sheath between the wafer 104 and the plasma 110. During plasma processing, positive ions are accelerated through the equipotential field lines to impinge on the surface of the wafer 104, thereby providing the desired etching effect, such as improved etching directionality. Due to the geometries of the upper electrode 108 and the chuck 102, the field lines may not be uniform across the entire wafer surface and may change significantly at the edges of the wafer 104. Therefore, generally a focusing ring 118 is provided to improve process uniformity across the entire wafer surface. Referring to Figure 1 , the wafer 104 is shown as being disposed within the focusing ring 118, and the focusing ring 118 can be formed of a suitable dielectric material, such as formed of ceramic, quartz, plastic, etc. Thus, the presence of the focusing ring 118 enables the equipotential field lines to be disposed substantially uniformly above the entire surface of the wafer 104.

[0031] The conductive shield 120 substantially surrounds the focus ring 118. The conductive shield 120 is configured to be substantially grounded within the plasma processing chamber 100. The shield 120 prevents unwanted equipotential field lines from occurring outside the focus ring 118. Regarding the chamber source gas supplied via the mixed gas line 112, it has been found that the gas transport characteristics within the plasma reactor and upstream thereof can be the most sensitive variables leading to etching or deposition non-uniformities.

[0032] Conventionally, the gas delivery plates upstream of the mixed gas line 112 are supplied via separate, gas-specific supply lines prior to mixing. These lines can include tubing for each gas component in the gas mixture and flow elements such as valves, regulators, mass flow controllers (MFCs), etc. These individual lines generally supply gas to a conventional gas mixing manifold via a manifold inlet. The separate gases are mixed in the manifold prior to leaving the manifold via an outlet for distribution via a gas supply line (e.g., the mixed gas line 112, Figure 1 ) to other components or processing chambers (e.g., the processing chamber 100, Figure 1 ).

[0033] Conventional gas mixing manifolds or distributors generally include an elongated, tubular structure having a relatively high volume. Each gas supply line for creating the desired gas mixture is spaced a specific distance along the length of the gas manifold. For example, some manifold lengths can be up to 27 inches. The overall length of a given manifold can be based on the number of gas lines supplied to the manifold. The number of gas lines can in turn depend on the gas mixture required for a given process in the processing chamber 100. Gas line connection locations are generally not consistently set between manifolds or across different processing chambers 100. In addition, it should be understood that even on a given manifold, some gas line inlet locations will be set at a greater distance from the manifold outlet than other inlets.

[0034] Due to the different gas molecule sizes and flow rates, the momentum of each gas entering a conventional manifold or distributor can vary greatly. Fast-flowing, heavy gases in the manifold can affect the flow and entrainment of slow-flowing gases in an unstable manner due to turbulence and other factors. If the slow-flowing gas inlet is set relatively far from the manifold outlet, for example, the reaction rate in response to a change in the desired gas mixture will thus be severely inhibited. Conventional manifolds can operate in a manner similar to a capacitor having an inherent delay time in response to inductive changes. In addition, even though the valve adjustment components affecting a change in the desired gas mixture operate quickly, there remains a significant challenge in being able to identify the exact composition of a given gas mixture due to the various flow rates, travel distances, and momenta of the components of a given gas mixture, which may be largely unknown.

[0035] Adding to this complexity, without proper control, the gas mixture or flow stability based on the linear sequence of gas lines supplying a conventional manifold can be disrupted as new gas lines are inserted into or removed from the manifold, especially when supplied at different pressures. For example, when an upstream reservoir is depleted, or when a different gas mixture is desired in the manifold or processing chamber 100, the gas line positions may change inadvertently or randomly. Attempts to control the supply of individual gases into a conventional manifold have included using software-controlled valves, but even this does not fully address the above challenges. Wafer etching applications are quite sensitive to the delivery time of the desired mixture to the chamber. Each of the above factors can significantly affect gas delivery performance, and potential problems caused by response time delays, co-flow inconsistencies, and gas mixing delays can compromise wafer uniformity.

[0036] In some applications, a gas mixing manifold or dispenser may be required as a source of mixed gas to supply a group of processing chambers 100 formed in a serial or parallel arrangement. In other applications, multiple regions such as a center, edge, or intermediate area may require a reliable gas source. Given the different chamber locations and different distribution line lengths to each processing chamber 100 in the group, the above problems may be exacerbated.

[0037] Figure 2 A pattern view of the gas dispenser subassembly 200 is shown. The subassembly 200 includes a body 201 and a track or array of tracks 205 of gas outlets, nozzles, or orifices. The outlets may take the form of the illustrated nozzles 202 arranged around a Figure 3 central gas distribution point (or area) 302 visible in. In some examples, the nozzles 202 may include a specific design and be sized to regulate the gas flow at a pre-aligned orifice, as described further below. Although the term "gas" is used in this specification, it should be understood that the systems and methods described herein can be more generally applicable to "fluids" unless the context otherwise indicates.

[0038] In some examples, as described further herein, the gas distribution point 302 is a local region or volume of specific size and is centered relative to the array 205 of gas inlets or outlets. The term "point" is thus not intended to represent a geometric element with zero dimensions. An example of the central mixed gas distribution point 302 can be seen more clearly in Figure 3 a partial cross-sectional view of the subassembly 200 provided in.

[0039] In some examples, Figure 2-3The sub-component 200 shown forms the first half of the gas distributor 300. The complete gas distributor can be formed by joining the opposite or second half of this first half to the first half. In some examples, the opposite or second half of the gas distributor is substantially a Figure 2-3 mirror image of the sub-component 200 shown therein. This arrangement can be seen in Figure 3 . The second half or opposite sub-component is numbered 200’. In some examples, when the two sub-components or halves 200 and 200’ are combined together, the gas distributor 300 is formed. In the combined form, the central mixed gas distribution point 302 is in fluid communication with the central mixed gas inlet of the gas distributor (such as the nozzle 206 shown at the center of the track array 205 of the outlet nozzle or orifice 202 as illustrated). In some examples, the gas distributor 300 of the present disclosure can be used to replace a conventional gas distributor of the above type, or be used in combination with similar or other components in a gas supply system.

[0040] In some examples, the gas distributor 300 can operate as a gas mixer such that the gas within the distributor is reversed in a manner that uses the gas inlet as the gas outlet and vice versa. The central gas mixing point is formed by the central gas distribution point. In such an arrangement, the gas distributor can be connected to a gas mixer of the type just described above such that the two in series can thus mix and distribute the mixed (or uniform) gas to one or more processing chambers to address the disadvantages regarding the use of conventional gas manifolds and distributors described herein.

[0041] Referring again to Figure 2 , in some examples, each of the outlet nozzles 202 can distribute a single or mixed gas that has been diverted or combined with gas from other outlet nozzles to a downstream location, e.g., to meet a desired ratio between gas supply channels or to be split into different streams within the gas distributor 300. For example, each of the outlet nozzles 202 shown in the view can be connected to a downstream component or processing chamber 100 that requires a gas source. Eight outlet nozzles 202 are shown connected to the first half sub-component 200. There can be other numbers of nozzles. Generally, but not necessarily, the second half of the gas distributor 300 is provided with the same number of outlet nozzles 202, and for this particular example, a total of sixteen outlet nozzles 202 are provided. Depending on the desired capacity of the gas distributor 300, other numbers of nozzles 202 can be employed to supply (or mix in an alternative gas mixing mode) the downstream component or processing chamber 100.

[0042] Now refer to Figure 3, each of the outlet nozzles 202 and 202' is shown as being in fluid communication with a central gas distribution point 302 via an inner conduit 304 formed in each of the sub-assemblies 200 and 200'. Each inner conduit 304 has the same length or gas path as each other. Each control valve 208 and 208' can be operated to regulate the quantity and rate of flow through the inner conduit 304 to produce or transport a desired gas or gas mixture. The inner conduit 304 is also visible in Figure 4 and the gas flow outlets of the inner conduit 304 are shown at 502 in Figure 5 . As shown in Figure 4 , the inner conduits 304 are radially equally spaced. As shown, the horizontally oriented control valves form an orbital array 205. In some examples, the gas flow outlets 502 can be threaded and serve as attachment points for complementary threaded support rods 203 and 203' for the outlet nozzles 202 and 202' respectively. In some examples, the gas flow outlets 502 are welded to the gas distributor 300 as a stub shaft, or as a C-type seal surface mounting fitting.

[0043] Referring again to Figure 3 , it should be understood that when the first and second sub-assemblies or halves 200 and 200' of the gas distributor 300 are joined together, the central gas distribution point 302 is defined by a volume having a generally bead-shaped or spherical shape. This shape is shown in the figure by a dashed outline. In some examples, the volume shape of the central gas distribution point 302 is oval or non-spherical. Other shapes are possible, such as, for example, cross-sectional shapes including circular, square, or rectangular. In some examples, the diameter of the bead-shaped, spherical, or circular profile is in the range of 0.1 - 100 mm, in some examples in the range of 0.5 - 50 mm, and in some examples is 1 - 10 mm.

[0044] Notably in the present disclosure, in some examples, the central gas distribution point 302 is equidistant from each of the outlet nozzles 202 and 202'. For this reason, in the sense that each gas flow path has the same length and does not depend on the linear position of the outlet nozzle along an elongated manifold as in the prior art examples cited, some of the problems caused by or inherent in conventional gas mixing or distribution manifolds are solved. Each gas in a given gas mixture travels the same distance. In the gas mixing mode of the gas distributor, one gas component is not collided with or disturbed by another gas component until it reaches the central mixing point 302. The volume of the central gas distribution point 302 is relatively small compared to the volume of a conventional gas manifold having, for example, a length of about twenty-seven inches.

[0045] An orbital array 205 of sixteen outlet nozzles 202 is shown schematically in Figure 6In the middle. The outlet nozzle 202 connected to the first half of the gas distributor 300 (i.e., the sub-assembly 200) has a supply line shown in solid outline and numbered 202. The outlet nozzle 202' connected to the second half of the gas distributor 300 has a supply line shown in dashed outline and numbered 202'. Thus, a total of sixteen outlet nozzles are provided in this example. Each nozzle 202 and 202' distributes and supplies the desired gas or gas mixture to, for example, the processing chamber 100( Figure 1 ).

[0046] It should be understood that the gas flowing into the gas distributor 300 is "split", that is, separated or distributed in proportion to the number of outlet nozzles 202 and 202' that are open during operation. Some nozzles 202 and 202' may be closed and not in operation. Since the volume of the central gas distribution point is relatively small compared to conventional gas mixers and distributors, the composition of the mixed gas is not affected by its travel through the gas distributor 300 and the proportion of components within the mixed gas is substantially maintained. Also in the gas mixing arrangement of the gas distributor 300 described above, for an arrangement with sixteen open inlet nozzles 200 and 200', a mixed gas with up to sixteen gas components can be formed. It should be understood that Figure 6 the orbital shape of the inlet nozzle array 205 shown by way of example in may not be a complete or perfect orbital shape in some examples. In some examples, a certain degree of ellipticity or other circular shape can be used.

[0047] In some examples, the control valves 208 are arranged to be in fluid communication with each outlet nozzle 202 and 202'. The array 205 of control valves 208 is used to distribute the relative mass flow rate of the gas leaving the gas distributor 300 via the outlet nozzles 202 and 202', or the composition of the mixed gas formed by the gas distributor 300 in its gas mixing arrangement. The relative control valves 208 are also alternately labeled 208 and 208' in Figure 6 and the individual and relative gas flow rates are labeled FR in the same view, which indicates the flow restriction on the exiting gas. The gas flow through the outlet nozzles 202 and 202' can be controlled using the control valves 208 and 208' and verified using relevant measuring equipment in some examples.

[0048] In some examples, the gas dispenser 300 may also operate as a gas flow rate checker or regulator when dispensing gas. For example, the gas flow rate (Q) to be measured can be passed through an orifice of appropriate size, sized to ensure supersonic flow through the orifice. Under conditions of supersonic flow, the gas flow rate Q = KP1, where (K) is a gas-related constant and (P1) is the upstream pressure. The upstream pressure (P1) can be measured with a high-precision digital capacitance manometer. The gas-related constant (K) is weakly related to temperature and can be determined empirically using an independent methodology. Thus, for a given orifice size (e.g., the orifices of the outlet nozzles 202 and 202'), the gas flow rate (Q) through the outlet nozzle 202 or 202' can be checked (i.e., calculated or verified) for a given upstream pressure (P1) (e.g., the pressure at the central gas distribution point 302, which can be measured by a manometer in some examples).

[0049] Now referring to Figure 7A-7B , a schematic top view of the gas flow checker 300 is shown. The gas flow checker 300 includes a central gas distribution point 302. The gas flow checker 300 includes an array of tracks 205 of vertically oriented control valves 208 surrounding the central gas distribution point 302. As shown, each control valve 208 includes a representative gas outlet 202. The gas flow checker 300 is included in a gas distribution arrangement 700, which includes a pair of manometers 702A and 702B and a third manometer 704.

[0050] A series of interconnected gas paths or conduits 706 place the control valve 208 and the pressure gauges 702A, 702B, and 704 in fluid communication with each other. In the illustrated gas distribution arrangement 700, the pressure gauge 704 measures the gas pressure at the gas outlets 202 of the two control valves 208 on the right side of the gas flow checker 300 out of the view. The pair of pressure gauges 702A and 702B similarly measure the three gas outlets 202 of the three control valves 208 on the left side of the gas flow checker 300 in the view. The illustrated pressure gauges can be used to measure and verify the gas flow through the gas flow checker 300 (and in some examples through each of its specific gas outlets 202). In some examples, certain gas lookup tables are used to convert the gas pressure measured by the pressure gauges 702A, 702B, or 704 into an actual flow rate. The gas flow error can be calculated and displayed, for example, on a user interface display. The system software can include a specific gas table to calculate the gas flow error applicable to the use of a specific gas. In some examples, the gas table includes the relationship between the pressure and the flow rate of the selected gas for the position of one or more orifices installed in the gas flow checker 300. In some examples, one or more measurements of the gas pressure rate increase can be made compared to the corresponding predicted pressure defined in the appropriate lookup gas table. The measurement time to reach a steady pressure is a function of the gas molecular weight and the gas flow rate (or MFC).

[0051] In some examples, the gas flow through each of the control valves 208 can be adjusted by an orifice 707 (or "flow rate orifice"), and the orifice 707 can be seen more clearly in the cross-sectional view of the control valve 208 shown in Figure 7B According to the gas flow equation further described above, for example, the orifice 707 can be designed and sized to allow or control the gas flow through the control valve 208 at a desired or specific or predetermined gas or mass flow rate. Thus, for example, if each orifice 707 in each of the illustrated control valves 208 is of equal size, for a given upstream pressure, the gas flow through each control valve 208 (and then through each gas outlet 202) will be the same. In this way, the gas flow checker of the present disclosure can equally distribute (split) and supply the gas to downstream components. Alternatively, by appropriately and differently sizing each orifice 707 for each gas outlet or nozzle 202, a corresponding and different desired or predetermined flow rate of the distributed gas can be established for each outlet 202 while distributing the gas to the same number of desired components located downstream of the gas flow checker 300. Exemplary downstream components can include one or more wafer processing chambers 100.

[0052] In some examples, the orifice 707 can be included in Figure 7Bin the replaceable or interchangeable component 708. For example, the interchangeable component 708 can be positioned within or below the surface-mounted control valve 208. Other arrangements are possible, for example, as Figure 3 shown in the schematic dashed outline, where the example orifice 707 is disposed directly within the gas outlet or nozzle 202 in the gas flow path of the gas exiting the gas flow verifier 300. In some examples, the orifice 707 can be disposed in all or a selected number of the outlets 202.

[0053] In some examples, a series of interchangeable components 708 each including an orifice 707 of a specific size are provided such that the gas flow rates from all of the gas outlets 202 can be conveniently adjusted. In other examples, specific and different gas flow rates for individual gas outlets 202 can be established in a convenient manner. In some examples, the gas flow verifier 300 conveniently serves as a dual-functional device that can operate in two modes simultaneously, i.e., in one mode proportionally diverting and distributing the gas and simultaneously in another mode restricting or verifying the gas flow. In essence, the same hardware of the gas flow verifier 300 can perform both functions simultaneously. Accordingly, the gas flow verifier 300 of the present disclosure is highly configurable to thus accommodate specific and varying conditions and gas flow requirements in a semiconductor manufacturing system.

[0054] In other examples, now referring to Figure 8A-8C , the orifice 707 can be directly or indirectly embedded within the control valve 208 and, for example, factory-calibrated in the above-described manner to allow a desired or predetermined gas flow to pass through the control valve 208 (with the orifice 707 mounted on the control valve 208) or to regulate the desired or predetermined gas flow passing through the control valve 208 (with the orifice 707 mounted on the control valve 208). Figure 8B-8C shows an alternative arrangement for providing the orifice 707 and, for example, Figure 8C shows an alternative form of the replaceable component 708.

[0055] Now referring to Figure 9 , an alternative arrangement of the gas flow verifier 300 is illustrated. In this case, the control valve 208 is horizontally oriented and again forms an array of tracks 205. Similar components corresponding to those shown in Figure 7A are numbered accordingly.

[0056] Other configurations of the gas flow verifier 300 and the gas distribution arrangement 700 are possible. In some examples, the pressure gauges 702A - 702B and 704 forming part of the gas distribution system 700 are used to verify the gas flow through the gas path or conduit 706, and more particularly to verify or determine the blockage condition of the gas outlet 202 or the orifice 707. The pressure gauges 702A - 702B and 704 can measure and verify the gas flow that will be transported through the gas flow verifier 300 at a single point in time or over a period of time.

[0057] In some exemplary embodiments of the gas dispenser or gas flow verifier 300 described herein, when compared to the relatively large volume of a conventional gas mixing or distribution manifold, the relatively negligible volume of the gas distribution point 302 can significantly reduce the mixing delay or delay time that would otherwise occur in prior art systems. The gas flow rate regulation according to the present disclosure can be performed over a wide range of gas flow rates (e.g., 0.5 sccm to 5000 sccm, with an error of ±0.5%).

[0058] The present disclosure may also include exemplary methods. Referring Figure 10 , a method 1000 of dispensing gas includes: at operation 1002, providing a gas dispenser that includes: a body, an inlet for allowing gas to enter the body of the gas dispenser, an array of tracks for dispensing gas from the gas dispenser, and a central gas distribution point disposed within the gas dispenser body and at the center of the array of tracks of the gas outlet; at operation 1004, supplying gas to the central gas distribution point through the gas inlet; at operation 1006, diverting the gas supplied within the central gas distribution point based on the number of gas outlets in the array of tracks, or the percentage of gas outlets in operation; at operation 1008, distributing the diverted gas to at least each of the gas outlets, or to each of the gas outlets in operation; and, at operation 1010, providing the distributed gas to a downstream location.

[0059] In some examples, method 1000 further includes distributing the diverted gas to the gas outlets through internal gas conduits formed within the body of the gas dispenser, the internal gas conduits connecting the array of tracks of the gas outlets to the central gas distribution point.

[0060] In some examples, method 1000 further includes distributing the diverted gas from the central gas distribution point along respective gas flow paths of the internal gas conduits to the gas outlets, the respective gas flow paths being equal in length.

[0061] In some examples, method 1000 further includes providing orifices associated with each gas outlet, the orifices being sized such that a specific gas flow can pass through the respective gas outlet or regulate the specific gas flow through the respective gas outlet.

[0062] In some examples, method 1000 further includes providing, within the body of the gas dispenser and for the central gas distribution point, a volume having a cross-sectional profile with a generally spherical shape, or a generally orbital shape.

[0063] In some examples, the non-transitory machine-readable medium includes instructions 1124 that, when read by machine 1100, cause the machine to control operations in a method that includes at least the non-limiting example operations outlined above.

[0064] Figure 11 A block diagram illustrating an example of machine 1100, on which one or more exemplary processing implementations described herein may be implemented, or one or more exemplary processing implementations described herein may be controlled by machine 1100. In an alternative implementation, machine 1100 may operate as a stand-alone device or may be connected (e.g., network-connected) to other machines. In a networked arrangement, machine 1100 may operate in the capacity of a server machine, a client machine, or both in a server-client network environment. In one example, machine 1100 may act as a peer machine in a peer-to-peer (P2P) network (or other distributed network) environment. Further, although only a single machine 1100 is shown, the term "machine" shall also be taken to include any collection of machines (that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methods described herein, such as via cloud computing, software as a service (SaaS), or other computer cluster configurations).

[0065] Examples described herein may include logic, multiple components or mechanisms, or may operate via logic, multiple components or mechanisms. A circuit system is a collection of circuits implemented in a tangible entity that includes hardware (e.g., simple circuits, gates, logic, etc.). Circuit system components can have flexibility over time and with basic hardware variability. A circuit system includes components that, when operating, can perform specified operations either individually or in combination. In one example, the hardware of a circuit system can be designed in a fixed, immutable manner to perform a particular operation (e.g., hardwired). In one example, the hardware of a circuit system can include variable connection entity components (e.g., execution units, transistors, simple circuits, etc.) that include a computer-readable medium modified physically (e.g., magnetically, electrically, by a movable arrangement of invariant mass particles, etc.) to encode instructions for a particular operation. When the entity components are connected, the basic electrical properties of the hardware components are changed (e.g., from insulator to conductor, or vice versa). The instructions enable an embedded hardware (e.g., an execution unit or a loading mechanism) to create components of the circuit system in the hardware via variable connections to perform portions of a particular operation when operating. Thus, when the device is operating, the computer-readable medium is communicatively coupled to other components of the circuit system. In one example, any of the entity components can be used in more than one component of more than one circuit system. For example, in operation, an execution unit can be used in a first circuit of a first circuit system at one point in time and reused by a second circuit of the first circuit system or a third circuit of a second circuit system at different times.

[0066] A machine (e.g., a computer system) 1100 can include a hardware processor 1102 (e.g., a central processing unit (CPU), a hardware processor core, or any combination thereof), a graphics processing unit (GPU) 1103, a main memory 1104, and a static memory 1106, some or all of which can communicate with each other via an interconnection (e.g., a bus) 1108. The machine 1100 can also include a display device 1110, an alphanumeric input device 1112 (e.g., a keyboard), and a user interface (UI) navigation device 1114 (e.g., a mouse). In one example, the display device 1110, the alphanumeric input device 1112, and the UI navigation device 1114 can be a touchscreen display. The machine 1100 can additionally include a mass storage device (e.g., a drive unit) 1116, a signal generation device 1118 (e.g., a speaker), a network interface device 1120, and one or more sensors 1121, such as a global positioning system (GPS) sensor, a compass, an accelerometer, or another sensor. The machine 1100 can include an output controller 1128 (e.g., a serial (e.g., universal serial bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC), etc.) connection) to communicate with or control one or more peripheral devices (e.g., a printer, a card reader, etc.).

[0067] The mass storage device 1116 can include a machine-readable medium 1122, on which one or more sets of data structures or instructions 1124 (e.g., software) can be stored, and these data structures or instructions 1124 implement any one or more of the techniques or functions described herein, or are used by any one or more of the techniques or functions described herein. During its execution by the machine 1100, the instructions 1124 can also be present, in whole or at least in part, within the main memory 1104, within the static memory 1106, within the hardware processor 1102, or within the GPU 1103. In one example, one or any combination of the hardware processor 1102, the GPU 1103, the main memory 1104, the static memory 1106, or the mass storage device 1116 can constitute the machine-readable medium 1122.

[0068] Although the machine-readable medium 1122 is shown as a single medium, the term "machine-readable medium" can include a single medium or multiple media (e.g., a centralized or distributed database and / or associated caches and servers) configured to store one or more instructions 1124.

[0069] The term "machine-readable medium" can include: any medium that can store, encode, or carry instructions 1124 for execution by a machine 1100 and cause the machine 1100 to perform any one or more of the techniques of the present disclosure; or any medium that can store, encode, or carry data structures used by or associated with such instructions 1124. Non-limiting examples of machine-readable media can include solid-state memories and optical and magnetic media. In one example, a mass machine-readable medium includes a machine-readable medium 1122 having a plurality of particles that have an invariant mass (e.g., rest mass). Thus, a mass machine-readable medium is not an instantaneous propagated signal. Specific examples of mass machine-readable media can include non-volatile memories such as semiconductor memory devices (e.g., electrically programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), and flash memory devices); magnetic disks such as internal hard disks and removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks. The instructions 1124 can be further sent or received via a network interface device 1120 using a transmission medium over a communication network 1126.

[0070] While embodiments have been described with reference to specific exemplary embodiments, it is apparent that various modifications and changes can be made to these embodiments without departing from the broader scope of the subject matter of the present invention. Accordingly, the specification and drawings are to be regarded as illustrative rather than restrictive. The accompanying drawings, which form a part hereof, illustrate, in an illustrative (but not restrictive) manner, specific embodiments in which the subject matter can be practiced. The illustrated embodiments are described in sufficient detail to enable those skilled in the art to practice the teachings disclosed herein. Other embodiments can be used and other embodiments can be derived therefrom, such that structural and logical substitutions and changes can be made without departing from the scope of the present disclosure. Accordingly, this detailed description is not to be regarded as restrictive, and the scope of the various embodiments is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.

[0071] These embodiments of the subject matter of the present invention can herein be referred to individually and / or collectively by the term "invention," which is for convenience only and is not intended to voluntarily limit the scope of this application to any single invention or inventive concept (if in fact more than one invention or inventive concept is disclosed). Thus, while specific embodiments are shown and described herein, it should be understood that any configuration calculated to achieve the same purpose can substitute for the specific embodiments shown. The present disclosure is intended to cover all adaptations or variations of various embodiments. After reading the above description, combinations of the above embodiments and other embodiments not specifically described herein will be apparent to those skilled in the art.

Claims

1. A gas distributor, comprising: A body; A gas outlet of an orbit array for distributing gas to an external component; A gas inlet for enabling the gas to enter the body, the gas inlet being located within the gas outlet of the orbit array; A gas distribution point separated from the gas inlet, the gas distribution point including an internal volume disposed within the body and surrounded by the gas outlets of the orbit array, the internal volume being in fluid communication with the gas outlets of the orbit array through an array of respective gas paths, the gas paths extending from the internal volume to each of the gas outlets, and wherein the gas path lengths of the gas paths are the same; and Wherein each gas outlet includes an orifice sized to enable a predetermined gas flow rate to pass through the gas outlet or to regulate the predetermined gas flow rate passing through the gas outlet.

2. The gas distributor according to claim 1, wherein the gas outlets of the orbit array are radially and equidistantly spaced around the gas distribution point.

3. The gas distributor according to claim 1, wherein the body includes an internal gas conduit connecting the gas distribution point to the gas outlets of the orbit array.

4. The gas distributor according to claim 3, wherein the respective gas flow paths of the internal gas conduit from the gas distribution point to the gas outlets of the orbit array are equal in length.

5. The gas distributor according to claim 4, wherein, The internal gas conduits are arranged in a radial array, each internal gas conduit extending from the gas distribution point to each of the gas outlets of the orbit array.

6. The gas distributor according to claim 1, wherein the body includes a mounting position for a control valve or a nozzle so that a predetermined gas flow rate can leave the gas outlet or regulate the predetermined gas flow rate leaving the gas outlet.

7. The gas distributor according to claim 6, wherein, Each of the control valves or nozzles can be mounted at respective ones of the mounting positions such that each gas outlet is equipped with its own control means for controlling the gas flow rate through each gas outlet, wherein each of the control valves or nozzles includes an orifice.

8. The gas distributor according to claim 6, further comprising the control valve or the nozzle.

9. The gas distributor according to claim 8, wherein the control valve or the nozzle is interchangeable.

10. The gas distributor according to claim 8, wherein the control valve or the nozzle is configured in the same plane.

11. The gas distributor according to claim 8, wherein the orifice associated with the first control valve or nozzle is sized differently from the orifice associated with the second control valve or nozzle.

12. The gas distributor according to claim 1, wherein the internal volume of the gas distribution point includes a spherical volume.

13. The gas distributor according to claim 1, further comprising: One or more pressure gauges for measuring or verifying the gas flow rate of the gas flowing through the gas outlets of the orbit array.

14. The gas distributor according to claim 1, wherein, The body includes two components, a dividing line being defined between the two components, wherein the internal volume is located on the dividing line of the two components, wherein the first of the two components defines a first wall of the internal volume, and the second of the two components defines a second wall of the internal volume.

15. A gas mixer comprising: a body; an array of gas inlets for receiving one or more components of a mixed gas; a mixed gas outlet for discharging the mixed gas from the body, the mixed gas outlet being located within the array of gas inlets; a gas mixing point separated from the mixed gas outlet, the gas mixing point including an internal volume disposed within the body and surrounded by the array of gas inlets, the internal volume being in fluid communication with the array of gas inlets through an array of respective gas paths that extend from the internal volume to each of the gas inlets, and wherein the gas path lengths of the gas paths are the same; and wherein each gas outlet includes an orifice sized to permit a predetermined gas flow rate to pass through the gas outlet or to regulate the predetermined gas flow rate passing through the gas outlet.

16. The gas mixer according to claim 15, wherein the array of gas inlets surrounds the gas mixing point radially and is equidistantly spaced.

17. The gas mixer according to claim 15, wherein the body includes an internal gas conduit connecting the gas mixing point to the array of gas inlets.

18. The gas mixer according to claim 17, wherein the respective gas flow paths of the internal gas conduit from the gas mixing point to the array of gas inlets are equal in length.

19. The gas mixer according to claim 17, wherein, The internal gas conduits are arranged in a radial array, each internal gas conduit extending from the gas mixing point to each of the gas inlets in the array of gas inlets.

20. The gas mixer according to claim 19, wherein the body includes mounting locations for control valves or nozzles such that a predetermined gas flow rate can enter the gas inlets or regulate the predetermined gas flow rate entering the gas inlets.

21. The gas mixer according to claim 20, wherein, Each of the control valves or nozzles can be mounted at respective ones of the mounting locations such that each gas inlet is provided with its own control means for controlling the gas flow rate through each gas inlet, wherein each of the control valves or nozzles includes an orifice.

22. The gas mixer according to claim 20, further comprising the control valves or nozzles.

23. The gas mixer according to claim 22, wherein the control valves or nozzles are interchangeable.

24. The gas mixer according to claim 22, wherein the control valves or nozzles are configured in the same plane.

25. The gas mixer according to claim 22, wherein the orifice associated with a first control valve or nozzle is sized differently from the orifice associated with a second control valve or nozzle.

26. The gas mixer according to claim 15, wherein the internal volume of the gas mixing point comprises a volume in a spherical shape.

27. The gas mixer according to claim 15, further comprising: one or more pressure gauges for measuring or calibrating the gas flow rate of the gas flowing through the gas inlet or the mixed gas outlet of the track array.

28. The gas mixer according to claim 15, wherein, The body includes two components, a demarcation line is defined between the two components, wherein the internal volume is located on the demarcation line of the two components, wherein the first of the two components defines a first wall of the internal volume, and the second of the two components defines a second wall of the internal volume.

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