Focusing ring, substrate processing apparatus, and substrate processing method

Abstract

The invention provides a focus ring, a substrate processing apparatus and a substrate processing method. The focus ring includes a ring body having a shaft extending in a first direction. The ring body includes a top surface, an inner side surface extending downwardly from the top surface, and a bottom surface extending outwardly from a lower end of the inner side surface. The inner side surface includes a first inner side surface extending downwardly from the top surface and a second inner side surface extending downwardly from a lower end of the first inner side surface. The second inside surface forms a first acute angle with the first direction. The bottom surface includes a flat surface and an inclined surface extending from the flat surface toward the second inner side surface. The inclined surface forms a second acute angle with the first direction.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2024 - 0006828, filed with the Korean Intellectual Property Office on January 16, 2024, the entire disclosure of which is incorporated herein by reference. Technical field

[0003] Embodiments of the present disclosure relate to a focus ring, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring, and more particularly, to a focus ring capable of controlling the discharge of heat transfer gas, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring. Background art

[0004] Various processes can be used to fabricate semiconductor devices. For example, semiconductor devices can be fabricated by subjecting silicon wafers to a lithography process, an etching process, a deposition process, etc. Various fluids can be used in these processes. For example, plasma can be used in an etching process and / or a deposition process. A focus ring can be used to control the plasma. To control the temperature of the focus ring, a heat transfer gas can be supplied to the bottom surface of the focus ring. Summary of the invention

[0005] Some embodiments of the present disclosure provide a focus ring capable of uniformly discharging heat transfer gas, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring.

[0006] Some embodiments of the present disclosure provide a focus ring capable of improving the yield rate of a substrate etching process, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring.

[0007] Some embodiments of the present disclosure provide a focus ring capable of being accurately and quickly installed, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring.

[0008] Aspects of the embodiments of the present disclosure are not limited to the above aspects, and those skilled in the art will clearly understand other aspects not mentioned above from the following description.

[0009] According to an embodiment of the present disclosure, a focusing ring is provided, which includes a ring body having an axis extending in a first direction. The ring body includes: a top surface; an inner surface extending downward from the top surface; and a bottom surface extending outward from the lower end of the inner surface. The inner surface includes: a first inner surface extending downward from the top surface, the first inner surface being parallel to the first direction; and a second inner surface extending downward from the lower end of the first inner surface, the second inner surface forming a first acute angle with the first direction. The bottom surface includes: a flat surface perpendicular to the first direction; and an inclined surface extending from the flat surface toward the second inner surface, the inclined surface forming a second acute angle with the first direction.

[0010] According to an embodiment of the present disclosure, a substrate processing apparatus is provided, which includes: a process chamber including a process space; a pedestal in the process chamber; and a focusing ring on the pedestal. The pedestal includes: a chuck body; and a chuck electrode in the chuck body. The chuck body includes a gas supply channel recessed downward from the top surface of the chuck body. The gas supply channel includes an outer channel below the focusing ring. The focusing ring includes a ring body. The ring body includes: a top surface; an inner surface extending downward from the top surface of the ring body; and a bottom surface extending outward from the lower end of the inner surface. The bottom surface includes: a flat surface parallel to the horizontal direction of the focusing ring; and an inclined surface extending from the flat surface toward the inner surface and forming a first acute angle with the flat surface.

[0011] According to an embodiment of the present disclosure, a substrate processing method is provided, which includes: placing a focusing ring on a pedestal of a substrate processing apparatus; supplying gas to a position below the focusing ring through the pedestal; placing a substrate on the pedestal; and supplying a process gas into the substrate processing apparatus. The focusing ring includes a ring body. The ring body includes: a top surface; an inner surface extending downward from the top surface; and a bottom surface extending outward from the lower end of the inner surface. The bottom surface includes: a flat surface parallel to the horizontal direction of the ring body; and an inclined surface extending from the flat surface toward the inner surface and forming an acute angle with the flat surface. Supplying gas to a position below the focusing ring includes supplying gas from a position below the inclined surface toward the inclined surface.

[0012] Details of other exemplary embodiments are included in the following description and the drawings. Description of the Drawings

[0013] Figure 1 A cross-sectional view of a substrate processing apparatus according to some embodiments of the present disclosure is shown.

[0014] Figure 2 A cross-sectional view of a pedestal and a focusing ring according to some embodiments of the present disclosure is shown.

[0015] Figure 3 Shown is Figure 2 an enlarged cross-sectional view of part X of

[0016] Figure 4 shows Figure 3 exploded perspective view of

[0017] Figure 5 shows a perspective view of a pedestal and a focusing ring according to some embodiments of the present disclosure.

[0018] Figure 6 shows a partially cut-away perspective view of a pedestal and a focusing ring according to some embodiments of the present disclosure.

[0019] Figure 7 shows a cross-sectional view of a focusing ring according to some embodiments of the present disclosure.

[0020] Figure 8 shows a cross-sectional view of a pedestal according to some embodiments of the present disclosure.

[0021] Figure 9 shows a plan view of a pedestal according to some embodiments of the present disclosure.

[0022] Figure 10 shows a flowchart of a substrate processing method according to some embodiments of the present disclosure.

[0023] Figures 11 to 16 shows a schematic view of a substrate processing method according to the flowchart of Figure 10 Detailed Description

[0024] Some non-limiting example embodiments of the present disclosure will be described below with reference to the accompanying drawings. Throughout the specification, like reference numerals may indicate like components.

[0025] It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, it can be directly on, directly connected to, or directly coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element or layer is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, no intervening elements or layers are present.

[0026] Figure 1 shows a cross-sectional view of a substrate processing apparatus according to some embodiments of the present disclosure.

[0027] In this specification, a first direction D1, a second direction D2 intersecting the first direction D1, and a third direction D3 intersecting each of the first direction D1 and the second direction D2 are described. The first direction D1 may be referred to as the vertical direction or the upward direction. Each of the second direction D2 and the third direction D3 may be referred to as a horizontal direction.

[0028] Reference Figure 1 , a substrate processing apparatus SA can be provided. The substrate processing apparatus SA can perform an etching process and / or a deposition process on a substrate. The term "substrate" used in this specification may represent a silicon (Si) wafer, but the embodiments of the present disclosure are not limited thereto. The substrate processing apparatus SA can use plasma to process the substrate. The substrate processing apparatus SA can generate plasma in various ways. For example, the substrate processing apparatus SA can be a capacitively coupled plasma (CCP) apparatus and / or an inductively coupled plasma (ICP) apparatus. For convenience, a CCP-type substrate processing apparatus will be shown and discussed below. The substrate processing apparatus SA can include a process chamber 1, a pedestal 7, a focus ring 5, an outer ring 9 (see Figures 3 - 4 ), a showerhead 3, a first chuck power application device 21, a second chuck power application device 23, a radio frequency (RF) power application device 4, a heat transfer gas supply device 6, a vacuum pump VP, and a gas supply device GS.

[0029] The process chamber 1 can provide a process space 1h. Substrate processing can be performed in the process space 1h. The process space 1h can be isolated from the external space. During substrate processing, the process space 1h can be in a substantially vacuum state. The process chamber 1 can have a cylindrical shape, but the embodiments of the present disclosure are not limited thereto.

[0030] The pedestal 7 can be located in the process chamber 1. For example, the pedestal 7 can be located in the process space 1h. The pedestal 7 can support and / or fix the substrate. Substrate processing can be performed with the substrate placed on the pedestal 7. The pedestal 7 will be further discussed in detail below.

[0031] The focus ring 5 can be located on the pedestal 7. For example, the focus ring 5 can be supported by the pedestal 7. The focus ring 5 will be further discussed in detail below.

[0032] The outer ring 9 (see Figures 3 - 4 ) can be located on the pedestal 7. The outer ring 9 can surround the focus ring 5. The outer ring 9 will be further discussed in detail below.

[0033] The showerhead 3 can be located in the process chamber 1. For example, the showerhead 3 can be located in the process space 1h. The showerhead 3 can be arranged to face upward and be separated from the pedestal 7. The gas supplied from the gas supply device GS can be uniformly sprayed into the process space 1h through the showerhead 3.

[0034] The first chuck power application device 21 can apply direct current (DC) power to the pedestal 7. The DC power applied by the first chuck power application device 21 can fixedly place the substrate at a specific position on the pedestal 7. Further details thereof will be provided below.

[0035] The second chuck power applying device 23 can apply direct current (DC) power to the pedestal 7. The DC power applied from the second chuck power applying device 23 can fixedly place the substrate at a specific position on the pedestal 7. Further details thereof will be provided below.

[0036] The RF power applying device 4 can supply radio frequency (RF) power to the pedestal 7. Thereby, the plasma in the process space 1h can be controlled. Further details thereof will be provided below.

[0037] The heat transfer gas supply device 6 can supply gas to the top surface of the pedestal 7. The heat transfer gas supply device 6 can be connected to the pedestal 7. The heat transfer gas supply device 6 can supply gas to the top surface of the pedestal 7 through the pedestal 7. For example, the heat transfer gas supply device 6 can supply gas to the bottom surface of the substrate disposed on the top surface of the pedestal 7. In addition, the heat transfer gas supply device 6 can supply gas to the bottom surface of the focus ring 5 supported on the top surface of the pedestal 7. The heat transfer gas supply device 6 can include a gas tank, a compressor, and a valve. The gas supplied from the heat transfer gas supply device 6 can include helium (He), but the embodiments of the present disclosure are not limited thereto. Further details thereof will be provided below.

[0038] The vacuum pump VP can be connected to the process space 1h. The vacuum pump VP can apply a vacuum pressure to the process space 1h when performing substrate processing.

[0039] The gas supply device GS can supply process gas to the process space 1h. The gas supply device GS can include a gas tank, a compressor, and a valve. The plasma can be generated from a part of the gas supplied from the gas supply device GS to the process space 1h.

[0040] Figure 2 A cross-sectional view of a pedestal and a focus ring according to some embodiments of the present disclosure is shown. Figure 3 Shows Figure 2 An enlarged cross-sectional view of the X part of. Figure 4 Shows Figure 3 An exploded perspective view of. Figure 5 A perspective view of a pedestal and a focus ring according to some embodiments of the present disclosure is shown.

[0041] Figure 6 A partially cut-away perspective view of a pedestal and a focus ring according to some embodiments of the present disclosure is shown.

[0042] Referring to Figures 2 to 6 The pedestal 7 can include a chuck body 71, a support member 72, a plasma electrode 73, a chuck electrode 75, a heater 77, and an outer chuck electrode 79.

[0043] The chuck body 71 can support the substrate and the focus ring 5. For example, the substrate and the focus ring 5 can be disposed on the top surface 71u of the chuck body 71. The chuck body 71 can have a cylindrical shape, but embodiments of the present disclosure are not limited thereto. The top surface 71u of the chuck body 71 can have a support top surface 711u and an edge top surface 713u. The support top surface 711u can be located at a height higher than that of the edge top surface 713u. The support top surface 711u can have a circular shape. The substrate can be disposed on the support top surface 711u. For example, the support top surface 711u can support the substrate. The edge top surface 713u can surround the support top surface 711u. The edge top surface 713u can have an annular shape. The focus ring 5 can be located on the edge top surface 713u. For example, the edge top surface 713u can support the focus ring 5. The edge top surface 713u will be further discussed in detail below.

[0044] The support member 72 can support the chuck body 71. The support member 72 can have a cylindrical shape, but embodiments of the present disclosure are not limited thereto.

[0045] The plasma electrode 73 can be located in the chuck body 71. Radio frequency (RF) power can be applied to the plasma electrode 73 to control the plasma in the process space 1h (see Figure 1 ). The plasma electrode 73 can have a disc shape, but embodiments of the present disclosure are not limited thereto.

[0046] The chuck electrode 75 can be located in the chuck body 71. The chuck electrode 75 can be electrically connected to the first chuck power applying device 21. The first chuck power applying device 21 can apply direct current (DC) power to the chuck electrode 75. Thus, the substrate can be fixed on the pedestal 7. The chuck electrode 75 can have a disc shape, but embodiments of the present disclosure are not limited thereto.

[0047] The heater 77 can be located in the chuck body 71. The heater 77 can include a plurality of coaxially arranged coils.

[0048] The outer chuck electrode 79 can be located in the chuck body 71. The outer chuck electrode 79 can be located outside the chuck electrode 75. For example, when observed in a plan view, the outer chuck electrode 79 can surround the chuck electrode 75. The outer chuck electrode 79 can have an annular shape, but embodiments of the present disclosure are not limited thereto. The outer chuck electrode 79 can include, for example, Al2O3. The outer chuck electrode 79 can be located below the focus ring 5. The diameter of the outer chuck electrode 79 can be larger than the diameter of the edge top surface 713u. A detailed description thereof will be further provided below.

[0049] The chuck body 71 can provide a cooling channel 71ch and a gas supply channel. The cooling channel 71ch can be provided within the chuck body 71. The cooling channel 71ch may not be connected to the top surface 71u of the chuck body 71. For example, the cooling channel 71ch may not be exposed on the top surface 71u of the chuck body 71. A cooling fluid can flow in the cooling channel 71ch. Thus, the temperature of the chuck body 71 can be controlled. The gas supply channel can be recessed downward from the top surface 71u of the chuck body 71. The gas supply channel can be connected to the heat transfer gas supply device 6 (see Figure 1 ). The heat transfer gas supply device 6 can supply gas to the top surface of the pedestal 7 through the gas supply channel. Thus, heat transfer can be generated between the pedestal 7 and the substrate on the pedestal 7. In addition, heat transfer can be generated between the pedestal 7 and the focusing ring 5 on the pedestal 7. The gas supply channel can include an outer channel 71gh. The outer channel 71gh can be located below the focusing ring 5. The outer channel 71gh can be connected to the top surface 71u of the pedestal 7. The outer channel 71gh can be connected to the edge top surface 713u. For example, the outer channel 71gh can be exposed on the edge top surface 713u. A detailed description thereof will be further provided below.

[0050] Figure 7 A cross-sectional view of a focusing ring according to some embodiments of the present disclosure is shown.

[0051] Referring to Figure 7 , the focusing ring 5 can include a ring body 51 and an outer member 53.

[0052] The ring body 51 can have an axis AX extending in a first direction D1 (see Figures 5 - 6 ). The ring body 51 can include silicon carbide (SiC), but the embodiments of the present disclosure are not limited thereto. For example, the ring body 51 can include silicon (Si) and / or quartz. The ring body 51 can have a top surface, an inner surface 51i, a bottom surface 51b, and an outer surface 51e.

[0053] The top surface of the ring body 51 can include a first top surface 51au, a second top surface 51bu, and a connecting top surface 51c. The first top surface 51au can be perpendicular to the first direction D1. The first top surface 51au can be annular. The second top surface 51bu can be located outside the first top surface 51au. The second top surface 51bu can be located at a height higher than the height of the first top surface 51au. The connecting top surface 51c can connect the first top surface 51au to the second top surface 51bu. The connecting top surface 51c can form an acute angle with the first direction D1, but the embodiments of the present disclosure are not limited thereto. For example, the connecting top surface 51c can be parallel to the first direction D1.

[0054] The inner surface 51i of the annular body 51 may extend downward from the top surface of the annular body 51. The annular body 51 may have a first inner surface 51ai, a second inner surface 51bi, and a third inner surface 51ci.

[0055] The first inner surface 51ai may be connected to the inner end of the first top surface 51au. The first inner surface 51ai may extend downward from the first top surface 51au. The first inner surface 51ai may be parallel to the first direction D1. For example, the first inner surface 51ai may extend downward from the first top surface 51au parallel to the first direction D1.

[0056] The second inner surface 51bi may be connected to the lower end of the first inner surface 51ai. The second inner surface 51bi may extend downward from the lower end of the first inner surface 51ai. The second inner surface 51bi may form an acute angle β with the first direction D1. For example, the second inner surface 51bi may extend downward from the lower end of the first inner surface 51ai while forming an acute angle β with the first direction D1. The first acute angle may refer to the acute angle β formed between the second inner surface 51bi and the first direction D1. The range of the first acute angle β may be from about 0.01° to about 5.00°, but embodiments of the present disclosure are not limited thereto.

[0057] The third inner surface 51ci may be connected to the lower end of the second inner surface 51bi. The third inner surface 51ci may extend from the second inner surface 51bi toward the bottom surface 51b of the annular body 51. For example, the third inner surface 51ci may connect the second inner surface 51bi to the bottom surface 51b of the annular body 51. The third inner surface 51ci may form an acute angle γ with the first direction D1. The third acute angle γ may refer to the acute angle γ formed between the third inner surface 51ci and the first direction D1. The third acute angle γ may be greater than the first acute angle β.

[0058] The bottom surface 51b of the annular body 51 may extend outward from the lower end of the inner surface 51i of the annular body 51. The bottom surface 51b of the annular body 51 may include a flat surface 51ab and an inclined surface 51bb.

[0059] The flat surface 51ab may be perpendicular to the first direction D1. For example, the flat surface 51ab may be parallel to the horizontal direction. The width w1 of the flat surface 51ab may be smaller than the width of the inclined surface 51bb. For example, the width w2 in the radial direction of the inclined surface 51bb may be greater than the width w1 in the radial direction of the flat surface 51ab. The width w1 in the radial direction of the flat surface 51ab may be, for example, from about 1.0 mm to about 8.0 mm. For example, the width w1 in the radial direction of the flat surface 51ab may be about 3.7 mm, but embodiments of the present disclosure are not limited thereto.

[0060] The inclined surface 51bb can extend from the flat surface 51ab towards the inner surface 51i of the ring body 51. The inclined surface 51bb can form an acute angle α with the flat surface 51ab. For example, the inclined surface 51bb can form an acute angle of 90°-α with the first direction D1. The second acute angle can refer to the acute angle of 90°-α formed between the inclined surface 51bb and the first direction D1. The second acute angle 90°-α can be greater than each of the first acute angle β and the third acute angle γ. The range of the second acute angle 90°-α can be, for example, from about 88.00° to about 89.95°. For example, the range of the acute angle α formed between the inclined surface 51bb and the flat surface 51ab can be from about 0.05° to about 2.00°.

[0061] In a state where the focusing ring 5 is disposed on the pedestal 7 (see Figure 3 ), the focusing ring 5 can have a bottom surface 51b that contacts the top surface 71u of the chuck body 71. For example, the focusing ring 5 and the pedestal 7 can be in direct contact with each other without any adhesive or gasket between the focusing ring 5 and the pedestal 7.

[0062] The outer surface 51e of the ring body 51 can extend upward from the edge of the bottom surface 51b of the ring body 51. The outer surface 51e of the ring body 51 can be parallel to the first direction D1, but embodiments of the present disclosure are not limited thereto.

[0063] The external member 53 can be connected to the outside of the ring body 51. The external member 53 and the ring body 51 can be integrally formed as a single unit. For example, when the ring body 51 includes silicon carbide (SiC), the external member 53 can also include silicon carbide (SiC). The external member 53 can have a bottom surface 53b, a top surface 53u, and an outer surface 53e.

[0064] The bottom surface 53b of the external member 53 can include a first bottom surface 53ba and a second bottom surface 53bb. The first bottom surface 53ba can be located at a height lower than the height of the second bottom surface 53bb. The second bottom surface 53bb can be located inward from the first bottom surface 53ba. The second bottom surface 53bb can contact the outer surface 51e of the ring body 51. The second bottom surface 53bb and the first bottom surface 53ba can be respectively located at a height higher than the height of the flat surface 51ab.

[0065] The top surface 53u of the external member 53 can be perpendicular to the first direction D1. The top surface 53u of the external member 53 can be connected to the top surface of the ring body 51 (for example, the second top surface 51bu). The top surface 53u of the external member 53 can be located at a height substantially the same as or similar to the height of the second top surface 51bu of the ring body 51.

[0066] The outer surface 53e of the outer member 53 may connect the bottom surface 53b of the outer member 53 to the top surface 53u of the outer member 53. The outer surface 53e of the outer member 53 may be parallel to the first direction D1, but embodiments of the present disclosure are not limited thereto.

[0067] Figure 8 A cross-sectional view of a pedestal according to some embodiments of the present disclosure is shown. Figure 9 A plan view of a pedestal according to some embodiments of the present disclosure is shown.

[0068] Referring to Figure 8 , the edge top surface 713u of the pedestal 7 may include a flat top surface 713au, an inclined top surface 713bu, and an extended top surface 713cu.

[0069] The flat top surface 713au may be perpendicular to the first direction D1. For example, the flat top surface 713au may be parallel to the flat surface 51ab (see Figure 7 ). The flat surface 51ab may be supported on the flat top surface 713au. For example, the flat surface 51ab may be in contact with the flat top surface 713au. The width in the radial direction of the flat top surface 713au may be substantially the same as or similar to the width in the radial direction of the flat surface 51ab, but embodiments of the present disclosure are not limited thereto. The outer diameter of the flat surface 51ab may be smaller than the outer diameter of the outer chuck electrode 79. Therefore, when a direct current (DC) voltage is applied to the outer chuck electrode 79, the entire flat surface 51ab of the focusing ring 5 may be in uniform contact with the entire flat top surface 713au.

[0070] The inclined top surface 713bu may be located inward from the flat top surface 713au. The inclined top surface 713bu may extend from the flat top surface 713au toward the support top surface 711u. The inclined top surface 713bu may form an acute angle δ with the flat top surface 713au. The fourth acute angle may refer to the acute angle δ between the inclined top surface 713bu and the flat top surface 713au. The fourth acute angle δ may be substantially the same as or similar to the second acute angle (see Figure 7 's 90°-α). The inclined top surface 713bu may be parallel to the inclined surface 51bb (see Figure 7 ). The inclined surface 51bb may be supported on the inclined top surface 713bu. The inclined surface 51bb may be in contact with the inclined top surface 713bu.

[0071] The extended top surface 713cu may be located inward from the inclined top surface 713bu. The extended top surface 713cu may be perpendicular to the first direction D1, but embodiments of the present disclosure are not limited thereto.

[0072] Referring to Figure 8 and Figure 9, the outer channel 71gh may include a distribution channel 71bgh and a connection channel 71agh.

[0073] The distribution channel 71bgh may extend in the circumferential direction. For example, the distribution channel 71bgh may have an annular shape. The distribution channel 71bgh may be connected to the top surface 71u of the chuck body 71. For example, the distribution channel 71bgh may be connected to the inclined top surface 713bu. The upper end of the outer channel 71gh may be located below the inclined surface 51bb.

[0074] The connection channel 71agh may extend downward from the distribution channel 71bgh. A plurality of connection channels 71agh may be provided. The plurality of connection channels 71agh may be arranged at intervals from each other in the circumferential direction. The distribution channel 71bgh may be connected to the heat transfer gas supply device 6 (see Figure 1 ). The gas supplied from the heat transfer gas supply device 6 may reach the connection channel 71agh via the distribution channel 71bgh. The gas supplied from the heat transfer gas supply device 6 may diffuse in the circumferential direction along the distribution channel 71bgh, and then may rise along the connection channel 71agh toward the bottom surface of the focusing ring 5 (see Figure 7 ).

[0075] Figure 10 A flowchart of a substrate processing method according to some embodiments of the present disclosure is shown.

[0076] Referring to Figure 10 , a substrate processing method SS may be provided. The substrate processing method SS may be a way of processing a substrate using the substrate processing device SA discussed with reference to Figures 1 to 9 . The substrate processing method SS may include placing a focusing ring on a pedestal (operation S1), supplying gas to a position below the focusing ring through the pedestal (operation S2), placing a substrate on the pedestal (operation S3), and supplying a process gas into the substrate processing device (operation S4).

[0077] The following will refer to Figures 11 to 16 to discuss in detail Figure 10 the substrate processing method SS.

[0078] Figures 11 to 16 A schematic diagram of a substrate processing method according to the flowchart of Figure 10 is shown.

[0079] Referring to Figure 10 , Figure 11 and Figure 12 , operation S1 may include placing the focusing ring 5 on the edge top surface 713u. After placing the focusing ring 5 on the edge top surface 713u, from the second chuck power application device 23 (see Figure 13)The chuck power DP applied to the outer chuck electrode 79 can fixedly place the focusing ring 5 on the pedestal 7.

[0080] Referring to Figure 10 and Figure 13 , operation S2 can include allowing the heat transfer gas supply device 6 to supply the gas CG. The gas CG supplied from the heat transfer gas supply device 6 can be a heat transfer gas. The gas CG supplied from the heat transfer gas supply device 6 can include helium (He), but the embodiments of the present disclosure are not limited thereto. The gas CG supplied from the heat transfer gas supply device 6 can reach the bottom surface of the focusing ring 5 via the outer channel 71gh. For example, the gas CG rising in the outer channel 71gh can reach the inclined surface 51bb (see Figure 7 ). The gas CG reaching the inclined surface 51bb can diffuse along the gap between the inclined surface 51bb and the inclined top surface 713bu (see Figure 8 ). Therefore, the gas CG can be discharged uniformly.

[0081] Referring to Figure 10 and Figure 14 , operation S3 can include placing the substrate WF on the support top surface 711u (see Figure 8 ). After placing the substrate WF on the pedestal 7, the direct current (DC) power applied from the first chuck power application device 21 can force the substrate WF to be fixed at a specific position on the pedestal 7.

[0082] Referring to Figure 10 and Figure 15 , operation S4 can include allowing the gas supply device GS to supply the process gas PG into the process space 1h. The process gas PG can include one or more of argon (Ar) gas, oxygen (O2) gas, and chlorine (Cl) gas, but the embodiments of the present disclosure are not limited thereto. The process gas PG can be uniformly distributed to the substrate WF through the showerhead 3.

[0083] Referring to Figure 16 , the radio frequency (RF) power applied from the radio frequency (RF) power application device 4 can convert a part of the process gas PG in the process space 1h (see Figure 15 ) into plasma PL. The plasma PL can process the substrate WF on the pedestal 7. For example, the plasma PL can etch the substrate WF on the pedestal 7.

[0084] A focus ring, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring according to some embodiments of the present disclosure. The shapes of the top surface of the pedestal and the bottom surface of the focus ring may conform to each other to allow the focus ring to accurately and quickly stay on the pedestal. For example, the inclined top surface and the flat top surface of the pedestal that conform to the inclined surface and the flat surface of the focus ring, respectively, may accurately position the focus ring on the pedestal.

[0085] A focus ring, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring according to some embodiments of the present disclosure. The inner surface of the focus ring may be partially inclined so that the focus ring can be automatically positioned when placed on the pedestal. Therefore, even less skilled workers can easily place the focus ring. In addition, since the upper part of the inner surface of the focus ring is non-inclined, the inner edge of the focus ring can be prevented from being etched by plasma during the manufacturing process. Therefore, the focus ring can be used for a long time.

[0086] A focus ring, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring according to some embodiments of the present disclosure. The gas supplied from the heat transfer gas supply device can be discharged uniformly and constantly between the inclined surface of the focus ring and the inclined top surface of the pedestal. Therefore, the gas discharge can be appropriately controlled to improve the process yield.

[0087] A focus ring, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring according to embodiments of the present disclosure can uniformly control the discharge of the heat transfer gas.

[0088] A focus ring, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring according to embodiments of the present disclosure can improve the yield of the etching process.

[0089] A focus ring, a substrate processing apparatus including the focus ring, and a substrate processing method using the focus ring according to embodiments of the present disclosure can perform quick installation accurately.

[0090] The effects of the embodiments of the present disclosure are not limited to the above content, and those skilled in the art can clearly understand other effects not mentioned above from the above description.

[0091] Although non-limiting exemplary embodiments are described in conjunction with the accompanying drawings, those skilled in the art will understand that various changes and modifications can be made without departing from the technical spirit and scope of the present disclosure. Therefore, it should be understood that the above embodiments are illustrative rather than restrictive in all respects.

Claims

1. A substrate processing apparatus includes a focusing ring, wherein, The focusing ring includes: A ring body having an axis extending in a first direction, wherein the ring body includes: A top surface; An inner surface extending downward from the top surface; and A bottom surface extending outward from the lower end of the inner surface, wherein the inner surface includes: A first inner surface extending downward from the top surface, the first inner surface being parallel to the first direction; and A second inner surface extending downward from the lower end of the first inner surface, the second inner surface forming a first acute angle with the first direction, and wherein the bottom surface includes: A flat surface perpendicular to the first direction; and An inclined surface extending from the flat surface toward the second inner surface, the inclined surface forming a second acute angle with the first direction.

2. The substrate processing apparatus according to claim 1, wherein, The second acute angle is greater than the first acute angle.

3. The substrate processing apparatus according to claim 2, wherein, The second acute angle is in the range of 88.00° to 89.95°.

4. The substrate processing apparatus according to claim 1, wherein, The inner surface further includes a third inner surface that extends from the lower end of the second inner surface toward the inclined surface and connects the second inner surface to the inclined surface, wherein the third inner surface forms a third acute angle with the first direction, wherein the third acute angle is greater than the first acute angle and less than the second acute angle.

5. The substrate processing apparatus according to claim 1, wherein, The ring body includes silicon carbide SiC.

6. The substrate processing apparatus according to claim 1, wherein The radial width of the flat surface of the focusing ring is smaller than the radial width of the inclined surface.

7. The substrate processing apparatus according to claim 1, wherein, The focusing ring further includes an external member connected to the outside of the ring body, wherein the external member includes: A first bottom surface; and A second bottom surface, wherein the second bottom surface contacts the outer surface of the ring body, wherein the height of the second bottom surface is higher than the height of each of the first bottom surface and the flat surface, wherein the height of the first bottom surface is higher than the height of the flat surface.

8. A substrate processing apparatus, comprising: A process chamber including a process space; A pedestal within the process chamber; And A focusing ring on the pedestal, wherein the pedestal includes: A chuck body; and A chuck electrode within the chuck body, wherein the chuck body includes a gas supply channel that is recessed downward from the top surface of the chuck body, wherein the gas supply channel includes an outer channel located below the focusing ring, and wherein the focusing ring includes a ring body, wherein the ring body includes: A top surface; An inner surface extending downward from the top surface of the ring body; and A bottom surface extending outward from the lower end of the inner surface, wherein the bottom surface includes: A flat surface parallel to the horizontal direction of the focusing ring; and An inclined surface extending from the flat surface toward the inner surface and forming a first acute angle with the flat surface.

9. The substrate processing apparatus according to claim 8, wherein, The upper end of the outer channel is below the inclined surface.

10. The substrate processing apparatus according to claim 8, wherein, The top surface of the chuck body includes: A support top surface configured to support a substrate; and An edge top surface having a ring shape, the edge top surface surrounding the support top surface, wherein the height of the support top surface is higher than the height of the edge top surface, and wherein the focusing ring is located on the edge top surface.

11. The substrate processing apparatus according to claim 10, wherein, The edge top surface includes: A flat top surface, parallel to the flat surface; and An inclined top surface, extending from the flat top surface towards the support top surface and forming a second acute angle with the flat top surface, wherein the outer channel is connected to the inclined top surface.

12. The substrate processing apparatus according to claim 11, wherein, The inclined top surface is parallel to the inclined surface.

13. The substrate processing apparatus according to claim 10, wherein, The bottom surface of the focusing ring contacts the edge top surface.

14. The substrate processing apparatus according to claim 13, wherein, The pedestal further includes an outer chuck electrode within the chuck body and outside the chuck electrode, wherein the outer chuck electrode is below the focusing ring.

15. The substrate processing apparatus according to claim 14, wherein the outer chuck electrode has an annular shape, and the outer diameter of the outer chuck electrode is greater than the outer diameter of the flat surface.

16. The substrate processing apparatus according to claim 8, wherein, The outer channel includes: A distribution channel, extending circumferentially along the chuck body and connected to the top surface of the chuck body; and A plurality of connection channels, extending downward from the distribution channel, wherein the plurality of connection channels are spaced apart from each other in the circumferential direction.

17. The substrate processing apparatus according to claim 1, further comprising: A process chamber, including a process space; and A pedestal, within the process chamber, wherein the focusing ring is on the pedestal.

18. The substrate processing apparatus according to claim 17, wherein The pedestal includes: A chuck body; and A chuck electrode, within the chuck body, wherein the chuck body includes a gas supply channel recessed downward from the top surface of the chuck body, wherein the gas supply channel includes an outer channel located below the focusing ring.

19. The substrate processing apparatus according to claim 18, wherein, The top surface of the chuck body includes: A support top surface, configured to support a substrate; and An edge top surface, having an annular shape, the edge top surface surrounding the support top surface, wherein the height of the support top surface is higher than the height of the edge top surface, and wherein the focusing ring is located on the edge top surface.

20. The substrate processing apparatus according to claim 19, wherein, The bottom surface of the focusing ring contacts the edge top surface.

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