Bonding defect detection method and device and storage medium

Abstract

The invention provides a bonding defect detection method, detection equipment and a storage medium. The detection method comprises the following steps: providing a to-be-detected bonding structure; wherein the to-be-tested bonding structure is provided with a bonding interface; heating the to-be-detected bonding structure, and detecting crack size information of a bonding interface; and determining the bonding strength of the to-be-detected bonding structure based on the crack size information. In other words, thermal stress is generated in a heating mode, and the bonding strength of the bonding interface is tested by a method of introducing cracks through thermal expansion. Therefore, the thermal stress is more uniformly distributed on the bonding interface, and the coverage range of bonding strength detection is enlarged. Meanwhile, microcracks caused by external mechanical stress cannot be generated, and the testing accuracy is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductors, and in particular, to a method for detecting bonding defects, a detection device, and a storage medium. Background Art

[0002] In the field of advanced packaging, the bonding strength test of bonded wafers faces two major technical bottlenecks:

[0003] First, the test coverage is insufficient. The current mainstream insertable double cantilever beam method (DCB) needs to insert a blade from the edge of the wafer into the bonding interface, measure the crack length through infrared imaging, and calculate the strength. However, this method can only detect the bonding quality of the edge area and is completely ineffective for interface defects (such as delamination or microcracks) in the central area of the wafer, resulting in the failure to effectively monitor systematic process risks.

[0004] Second, the reliability defect of the shear test: The sample preparation process of the shear test requires mechanical cutting of the bonded wafers, but the cutting stress will introduce microcracks and damage the original bonding interface state, resulting in the test results deviating from the true strength. At the same time, the complex sample preparation process also significantly increases the time and cost. These problems mainly stem from the physical limitations and destructive intervention defects of traditional methods.

[0005] Therefore, it is necessary to achieve precise detection of the spatial distribution of bonding strength through technological innovation and avoid sample preparation damage, so as to improve the detection accuracy and process reliability and provide core support for the interface strength test of bonded wafers. Summary of the Invention

[0006] In view of this, embodiments of the present disclosure provide a method for detecting bonding strength, a detection device, and a storage medium to further improve the test reliability and test coverage.

[0007] The technical solution of the present disclosure is implemented as follows:

[0008] Embodiments of the present disclosure provide a method for detecting bonding strength, including: providing a to-be-tested bonding structure; wherein, the to-be-tested bonding structure has a bonding interface; heating the to-be-tested bonding structure and detecting crack size information of the bonding interface; and determining the bonding strength of the to-be-tested bonding structure based on the crack size information.

[0009] In the above solution, the detection method further includes: annealing the to-be-tested bonding structure before heating the to-be-tested bonding structure.

[0010] In the above solution, determining the bonding strength of the bonding structure to be measured based on the crack size information includes: obtaining a thermal expansion model of the bonding structure to be measured; wherein, the thermal expansion model is used to characterize the corresponding relationship between thermal stress and the crack size information; obtaining the thermal stress of the bonding interface based on the thermal expansion model and the crack size information; and determining the bonding strength based on the thermal stress and the crack size information.

[0011] In the above solution, establishing the thermal expansion model of the bonding structure to be measured includes: obtaining a first parameter and a second parameter of the bonding structure to be measured; wherein, the first parameter is used to characterize the thermo-mechanical properties of various structures of the bonding interface at different temperatures; the second parameter is used to characterize the sizes of various structures of the bonding interface at different temperatures; and establishing the corresponding relationship between the thermal stress and the crack size information based on the first parameter and the second parameter.

[0012] In the above solution, the first parameter includes at least one of a coefficient of thermal expansion and a modulus of elasticity.

[0013] In the above solution, the maximum temperature for heating the bonding structure to be measured is greater than the temperature of the annealing treatment; and / or, the heating time for the bonding structure to be measured is greater than the time of the annealing treatment.

[0014] In the above solution, detecting the crack size information of the bonding interface includes: using a focused ion beam to determine the width and length of the cracks in the lateral direction of the dielectric isolation layer of the bonding interface; or using ultrasonic waves to detect the size information of the cavity of the bonding interface.

[0015] An embodiment of the present disclosure further provides a detection device, which includes: a detection unit and a data processing unit; wherein, the detection unit is configured to heat the bonding structure to be measured and detect the crack size information of the bonding interface of the bonding structure to be measured; the data processing unit is configured to determine the bonding strength of the bonding structure to be measured based on the crack size information.

[0016] In the above solution, the data processing unit is further configured to establish a thermal expansion model of the bonding structure to be measured; and obtain the thermal stress of the bonding interface based on the thermal expansion model and the crack size information; and determine the bonding strength based on the thermal stress and the crack size information; wherein, the thermal expansion model is used to characterize the corresponding relationship between thermal stress and the crack size information.

[0017] An embodiment of the present disclosure further provides a computer-readable storage medium, on which a computer program or instruction is stored, and when the computer program or instruction is executed, the computer is made to execute the detection method according to any one of the above solutions.

[0018] An embodiment of the present disclosure provides a method for detecting bonding strength, including: providing a bonding structure to be measured; wherein, the bonding structure to be measured has a bonding interface; heating the bonding structure to be measured and detecting crack size information of the bonding interface; determining the bonding strength of the bonding structure to be measured based on the crack size information. That is to say, in the embodiment of the present disclosure, thermal stress is generated by heating, and the bonding strength of the bonding interface is tested by the method of introducing cracks through thermal expansion. In this way, the distribution of thermal stress on the bonding interface is more uniform. Therefore, whether it is the bonding interface in the edge region of the wafer or the bonding interface in the center region of the wafer, the present disclosure can detect through the change of thermal stress, thereby improving the coverage range of bonding strength detection. At the same time, the embodiment of the present disclosure can directly detect the bonding structure to be measured without the sample preparation operation steps in the prior art, reducing the test time and thus improving the test efficiency. In addition, compared with the prior art, the embodiment of the present disclosure does not generate microcracks introduced by external mechanical stress, and thus avoids the test results deviating from the true strength, improving the test accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a schematic flow chart of the detection method provided by the embodiment of the present disclosure Figure 1 ;

[0020] Figure 2 is a schematic structural diagram of the detection device provided by the embodiment of the present disclosure;

[0021] Figure 3 is a schematic structural diagram of the bonding structure to be measured provided by the embodiment of the present disclosure;

[0022] Figure 4 is a schematic flow chart of the detection method provided by the embodiment of the present disclosure Figure 2 ;

[0023] Figure 5 is a schematic structural diagram of the bonding interface provided by the embodiment of the present disclosure Figure 1 ;

[0024] Figure 6 is a schematic structural diagram of the bonding interface provided by the embodiment of the present disclosure Figure 2 ;

[0025] Figure 7 is a schematic flow chart of the detection method provided by the embodiment of the present disclosure Figure 3 。 DETAILED DESCRIPTION OF THE EMBODIMENTS

[0026] To make the objectives, technical solutions, and advantages of the present disclosure clearer, the technical solutions of the present disclosure will be further elaborated in detail below with reference to the accompanying drawings and embodiments. The described embodiments should not be construed as limitations on the present disclosure. All other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present disclosure.

[0027] In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments. However, it is understood that "some embodiments" may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0028] If similar descriptions such as "first / second" appear in the application documents, the following explanation is added. In the following description, the terms "first / second / third" are only used to distinguish similar objects and do not represent a specific order for the objects. It can be understood that "first / second / third" can be interchanged in a specific order or sequence when permitted, so that the embodiments of the present disclosure described herein can be implemented in an order other than that illustrated or described herein.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this disclosure belongs. The terms used herein are only for the purpose of describing the embodiments of the present disclosure and are not intended to limit the present disclosure.

[0030] It should be noted that in this text, the term "comprising", "including" or any other variant thereof is intended to cover a non-exclusive inclusion, such that a process, method of detection, article, or apparatus comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method of detection, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a..." does not exclude the presence of additional identical elements in the process, method of detection, article, or apparatus comprising such element.

[0031] Figure 1 is a schematic flowchart of an optional detection method provided by an embodiment of the present disclosure. Figure 2 is a schematic structural diagram of an optional detection device 100 provided by an embodiment of the present disclosure. It should be noted that Figure 2 the detection device 100 shown in Figure 1 can be used to implement the detection method shown in Figure 1 and will be described in conjunction with the steps shown in

[0032] S101. Provide a bonding structure to be measured; wherein, the bonding structure to be measured has a bonding interface.

[0033] Figure 3 It is a schematic structural diagram of an optional bonding structure 200 to be measured provided by an embodiment of the present disclosure. It should be noted that Figure 3 The bonding method shown is D2W (Die to Wafer), and multiple first chips 110 are bonded to the wafer 120. The bonding method between the wafer 120 and the multiple first chips 110 can also be W2W (Wafer to Wafer), etc., which is not limited here.

[0034] In an embodiment of the present disclosure, with reference to Figure 3 , multiple first chips 110 are bonded to the wafer 120 to form a bonding structure 200 to be measured. A bonding interface 130 is formed between the multiple first chips 110 and the wafer 120. The "bonding interface" 130 refers to the surface where the first chip 110 and the wafer 120 are in contact and bonded.

[0035] The bonding interface 130 generally includes a metal interconnect structure 131 and a dielectric isolation layer 132. The metal interconnect structure 131 is used to connect the multiple first chips 110 to the wafer 120. The material of the metal interconnect structure 131 can be selected from one or a combination of metal materials such as copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W), and aluminum (Al). The dielectric isolation layer 132 covers the periphery of the metal interconnect structure 131 and is used to prevent short circuits and improve the interface mechanical strength. The material of the dielectric isolation layer can be selected from one or a combination of dielectric materials such as silicon dioxide (SiO2) and silicon carbonitride (SiCN).

[0036] S102. Heat the bonding structure to be measured and detect the crack size information of the bonding interface.

[0037] In an embodiment of the present disclosure, with reference to Figure 2 , the detection device 100 can heat the Figure 3 shown bonding structure 200 to be measured. During the heating process of the bonding structure 200 to be measured, due to the material difference between the metal interconnect structure 131 and the dielectric isolation layer 132, their coefficients of thermal expansion (CTE) do not match. Furthermore, the different expansion degrees between the metal interconnect structure 131 and the dielectric isolation layer 132 will generate thermal stress at the bonding interface 130, thereby causing cracks in some of the dielectric isolation layer 132 around the metal interconnect structure 131.

[0038] For example, the main material of the metal interconnect structure 131 is copper (Cu), and the linear coefficient of thermal expansion of copper (Cu) is approximately 1.7×10-5 / K. The dielectric isolation layer is usually formed of dielectric materials such as silicon dioxide (SiO2) or silicon carbonitride (SiCN). The linear coefficient of thermal expansion of silicon dioxide (SiO2) is approximately 4×10 -6 / K. The linear thermal expansion coefficient of silicon carbonitride is approximately 6.6×10 -6 / K. The linear thermal expansion coefficient of copper is more than 30 times that of silicon oxide. During the high-temperature process, the thermal stress caused by the expansion of copper will cause cracks in the surrounding dielectric isolation layer.

[0039] That is to say, in the embodiments of the present disclosure, thermal stress is generated by heating the bond structure 200 to be measured, and then the bond strength of the bond interface is tested by the generated thermal stress.

[0040] In the embodiments of the present disclosure, referring to Figure 2 , the detection device 100 can detect the crack size information of the bond interface 130 by means of focused ion beam (FIB) technology, ultrasonic scanning technology, etc. The crack size information can include the width (Width) W2 and length (Height) of the crack.

[0041] S103. Determine the bond strength of the bond structure to be measured based on the crack size information.

[0042] In the embodiments of the present disclosure, referring to Figure 2 , the detection device 100 can obtain the thermal stress applied to the bond interface based on the measured crack size information of the bond interface. For example, the detection device 100 can obtain the shape and volume changes of the metal interconnect structure and the dielectric isolation layer based on the crack size information, and then calculate the magnitude of the thermal stress σ through the shape and volume changes of the metal interconnect structure and the dielectric isolation layer and the thermal expansion coefficient.

[0043] Furthermore, the correspondence between the bond strength of the bond interface and the crack size information can be as shown in the following formula (1):

[0044]

[0045] It should be noted that in formula (1), K is the stress intensity factor, which is a parameter used to describe the stress field near the crack tip. The stress intensity factor K is related to the stress level, crack size, and crack shape of the material. α is the crack size. σ is the stress applied to the bond interface. π is the ratio of the circumference of a circle to its diameter.

[0046] In the embodiments of the present disclosure, combining Figure 2 and formula (1), the detection device 100 can use the thermal stress as the stress σ applied to the bond interface, and use the crack size information as the crack size α and substitute it into the above formula (1) to calculate the stress intensity factor K of the bond interface 130, that is, determine the bond strength of the bond structure 200 to be measured.

[0047] It can be understood that in the embodiments of the present disclosure, the thermal stress is generated by heating the bonding structure 200 to be measured. Furthermore, in the embodiments of the present disclosure, the bonding strength of the bonding interface can be tested by the generated thermal stress. And the thermal stress in the embodiments of the present disclosure is generated by the different expansion degrees of the metal interconnect structure and the dielectric isolation layer around it. In this way, the generation mode of the thermal stress is independent of the position of the metal interconnect structure on the wafer, that is: whether the metal interconnect structure is located in the edge area of the wafer or in the center area of the wafer, in the embodiments of the present disclosure, the bonding strength of the bonding interface can be detected through the change of the thermal stress. Thus, compared with the solution of the insertion type double cantilever beam method (DCB) in the prior art, the embodiments of the present disclosure further improve the coverage range of the bonding strength detection. At the same time, compared with the shearing test method in the prior art, the embodiments of the present disclosure do not need to prepare samples, reducing the test time, and thus can improve the test efficiency. In addition, compared with the prior art, the embodiments of the present disclosure do not generate microcracks introduced by mechanical stress. Furthermore, the introduced microcracks are avoided from interfering with the test, and the test result is prevented from deviating from the true strength, improving the accuracy of the test.

[0048] Figure 4 is a schematic flowchart of another optional detection method provided by the embodiments of the present disclosure, which will be described in combination with Figure 4 the steps shown. It should be noted that, compared with Figure 1 the detection method shown, Figure 4 in the detection method, only S201 is added before heating the bonding structure to be measured, Figure 4 and the remaining steps in Figure 1 can be understood with reference to

[0049] and will not be elaborated here.

[0050] In the embodiments of the present disclosure, with reference to Figure 2 , before the detection device 100 heats the bonding structure 200 to be measured in Figure 3 , the bonding structure 200 to be measured is also annealed. The temperature of the annealing treatment process can be between 150°C and 400°C. In this way, the embodiments of the present disclosure can eliminate the micropores and defects at the bonding interface through annealing treatment, improving the bonding strength of the bonding interface. At the same time, the morphology of the bonding interface of the bonding structure 200 to be measured is smoother after being optimized by annealing. Thus, the misjudgment probability caused by surface roughness in optical detection or electron microscope observation can be reduced. In addition, the annealing treatment can release the residual stress of the bonding structure 200 to be measured, avoiding the interference of potential defects such as microcracks caused by stress concentration of the first chip 110 on the test of the bonding interface. Thus, the reliability of the detection result is further improved.

[0051] In some embodiments of the present disclosure, the maximum temperature for heating the bond structure to be tested is greater than the annealing temperature; and / or, the heating time for the bond structure to be tested is greater than the annealing time. In this way, the test temperature is higher than the annealing temperature or the time exceeds the annealing time, which can accelerate the aging or phase change of the bonding interface material. Therefore, the embodiments of the present disclosure can expose potential failure risks (such as interface delamination, thermal stress cracks, etc.) under high-temperature extreme conditions in a short time, which helps to evaluate the ultimate performance and reliability boundary of the chip under overloaded working conditions.

[0052] In some embodiments of the present disclosure, it can also be achieved through Figure 7 S301 - S303 Figure 1 in S103, and will be described in combination with each step.

[0053] S301. Obtain the thermal expansion model of the bond structure to be tested; wherein, the thermal expansion model is used to characterize the corresponding relationship between thermal stress and crack size information.

[0054] In the embodiments of the present disclosure, referring to Figure 2 , the detection device 100 can establish Figure 3 the thermal expansion model of the bond structure 200 to be tested in. For example, the establishment process of the thermal expansion model may include: First, determine parameters such as the coefficient of thermal expansion (CTE), elastic modulus, and Poisson's ratio of each layer of material at the bonding interface 130 (such as the material of the metal interconnect structure and the material of the dielectric isolation layer), and obtain the three-dimensional temperature field distribution of the bond structure to be tested in different temperature states through experiments or simulations. Second, establish a three-dimensional geometric model based on finite element analysis (FEA), and refine the interface area when dividing the grid to capture local stress concentration. Finally, couple the thermal-mechanical multi-physical fields, apply the temperature field as a load to the structural field, consider the material nonlinearity and anisotropic characteristics, and calculate the displacement and stress distribution caused by thermal expansion.

[0055] S302. Obtain the thermal stress of the bonding interface based on the thermal expansion model and crack size information.

[0056] S303. Determine the bond strength based on the thermal stress and crack size information.

[0057] In the embodiments of the present disclosure, referring to Figure 2, the detection device 100 can first obtain the thermal stress of the bonding interface through the crack size information, and then use the thermal stress of the bonding interface and the crack size information to obtain the bonding strength of the bonding interface. For example, the material of the metal connection structure of the bonding structure to be measured is copper metal, and the material of the dielectric isolation layer is silicon dioxide. The detection device 100 can calculate the magnitude of the thermal stress based on the shape and volume of copper and silicon dioxide in the actual bonding structure to be measured, that is: calculate the stress σ applied to the bonding interface. Then, since the deformation of the bonding interface is mainly concentrated in the crack extension direction, the detection device 100 can substitute the crack length as the crack size α into the above formula (1), and substitute the thermal stress as the stress σ applied to the bonding interface into the above formula (1) to calculate the stress intensity factor K of the bonding interface 130, that is: determine the bonding strength of the bonding structure 200 to be measured.

[0058] In some embodiments of the present disclosure, S401-S402 can also be used to implement Figure 1 S301 in, and each step will be described in combination.

[0059] S401. Obtain the first parameter and the second parameter of the bonding structure to be measured; wherein, the first parameter is used to characterize the thermomechanical properties of various structures of the bonding interface at different temperatures; the second parameter is used to characterize the sizes of various structures of the bonding interface at different temperatures.

[0060] In the embodiments of the present disclosure, with reference to Figure 2 , the first parameter (thermomechanical property parameter) is used to quantify the mechanical response characteristics of the bonding interface at different temperatures. The first parameter includes at least one of the elastic modulus and the coefficient of thermal expansion. The first parameter can directly reflect the deformation ability, stress distribution and anti-fatigue characteristics of the material under thermal load, and is the core basis for predicting the failure mechanism of the bonding interface during temperature cycling (such as cracking caused by thermal mismatch). The second parameter (size parameter) reveals the degree of size mismatch caused by thermal expansion / contraction by measuring the geometric changes (such as lateral displacement and thickness shrinkage rate, etc.) of the bonding interface at different temperatures, and then evaluates the bonding reliability of the bonding interface.

[0061] S402. Based on the first parameter and the second parameter, establish the corresponding relationship between the thermal stress and the crack size information.

[0062] In the embodiments of the present disclosure, with reference to Figure 2 , the detection device 100 can collect the first parameters such as the coefficient of thermal expansion (CTE) and elastic modulus of each layer material of the bonding interface under different temperature change conditions, and the second parameters such as the crack size information of each layer material of the bonding interface under different temperature change conditions. Then, through the modeling method shown in the above S301, a thermal expansion model of the bonding structure to be measured is established.

[0063] In some embodiments of the present disclosure, it can also be implemented through S501 or S502 Figure 1 the S102 in

[0064] S501. Determine the width and length of the lateral crack of the dielectric isolation layer at the bonding interface by using a focused ion beam.

[0065] Figure 5 is a schematic structural diagram of an optional bonding interface 130 provided by an embodiment of the present disclosure.

[0066] In the embodiments of the present disclosure, in combination with Figure 2 and Figure 5 , if the heating process of the detection device 100 causes cracks 133 as shown in Figure 5 to appear around the metal interconnect structure 131, the detection device 100 can use the focused ion beam technology to detect the width W2 and length H2 of the lateral crack of the dielectric isolation layer at the bonding interface 130.

[0067] S502. Use ultrasonic waves to detect the size information of the cavity at the bonding interface.

[0068] Figure 6 is another schematic structural diagram of an optional bonding interface 130 provided by an embodiment of the present disclosure.

[0069] In the embodiments of the present disclosure, in combination with Figure 2 and Figure 6 , if the heating temperature of the detection device 100 is too high and a large-area void 134 as shown in Figure 6 appears in the entire area of the bonding interface, the ultrasonic detection technology can be used to determine the width W2 and length H2 of the lateral void 134 of the dielectric isolation layer at the bonding interface 130. Thus, compared with the focused ion beam technology, the detection speed and efficiency are further improved.

[0070] In some embodiments of the present disclosure, referring to Figure 2 , the detection device 100 includes a detection unit 10 and a data processing unit 20. The detection unit 10 may include a heating sub-unit 12 and a crack detection sub-unit 11.

[0071] In the embodiments of the present disclosure, referring to Figure 2 , the heating sub-unit 12 of the detection unit 10 can Figure 3The bonding structure 200 to be measured as shown is heated. The heating subunit 12 can be a device such as an oven. The heating subunit 12 can also record the heating time and heating temperature of the bonding structure to be measured. The crack detection subunit 11 can include a C-SAM (Contactless Scanning Acoustic Microscope) and an FIB (Focused Ion Beam) scanning device. The crack detection subunit 11 can detect the crack size information of the bonding interface of the bonding structure to be measured. That is to say, the detection unit 10 can, by heating, use materials with different coefficients of thermal expansion (CTE) and elastic moduli at the bonding interface to generate thermal stress, resulting in the generation of interface cracks.

[0072] In the embodiments of the present disclosure, referring to Figure 2 , the data processing unit 20 is configured to determine the bonding strength of the bonding structure to be measured based on the crack size information. That is to say, the data processing unit 20 can obtain the thermal stress change of the bonding structure to be measured based on the crack size information generated by the thermal stress, and further obtain the bonding strength of the bonding interface of the bonding structure to be measured through the thermal stress change of the bonding structure to be measured. In this way, in the embodiments of the present disclosure, thermal stress is generated by heating the bonding structure 200 to be measured, and the thermal stress is generated by the different expansion degrees of the metal interconnect structure and the surrounding dielectric isolation layer. Thus, the generation mode of the thermal stress is independent of the position of the metal interconnect structure on the wafer. Therefore, the embodiments of the present disclosure further improve the coverage range of the bonding strength detection. At the same time, compared with the shearing test method in the prior art, the embodiments of the present disclosure do not require sample preparation, reducing the test time, and thus can improve the test efficiency. In addition, compared with the prior art, the embodiments of the present disclosure do not generate microcracks introduced by external mechanical stress, avoiding the deviation of the test results from the true strength and improving the test accuracy.

[0073] In some embodiments of the present disclosure, referring to Figure 2 , the data processing unit 20 is further configured to establish a thermal expansion model of the bonding structure to be measured, obtain the thermal stress of the bonding interface based on the thermal expansion model and the crack size information; and determine the bonding strength based on the thermal stress and the crack size information; wherein the thermal expansion model is used to characterize the corresponding relationship between the thermal stress and the crack size information.

[0074] In some embodiments of the present disclosure, referring to Figure 2 , the maximum temperature at which the detection unit 10 heats the bonding structure to be measured is greater than the annealing temperature; and / or the heating time for the bonding structure to be measured is greater than the annealing time.

[0075] Based on the foregoing embodiments, the embodiments of the present disclosure further provide a computer-readable storage medium. The computer-readable storage medium stores one or more programs, and the one or more programs can be executed by one or more processors to implement as Figure 1 or Figure 4Steps of the detection method provided by the corresponding embodiment.

[0076] It should be noted that the above computer-readable storage medium may be a read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), ferromagnetic random access memory (FRAM), flash memory, magnetic surface memory, optical disc, or compact disc read-only memory (CD-ROM), etc.; it may also be various electronic devices including one or any combination of the above memories, such as mobile phones, computers, tablet devices, personal digital assistants, etc.

[0077] The embodiments of the present disclosure provide a storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps in the method corresponding to the above detection device are implemented.

[0078] It should be noted that in the present disclosure, the terms "include", "comprise" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, detection method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or further includes elements inherent to such process, detection method, article or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of another identical element in the process, detection method, article or device including the element.

[0079] The serial numbers of the above embodiments of the present disclosure are only for description and do not represent the superiority or inferiority of the embodiments. The detection methods disclosed in several detection method embodiments provided by the present disclosure can be arbitrarily combined without conflict to obtain new detection method embodiments. The features disclosed in several product embodiments provided by the present disclosure can be arbitrarily combined without conflict to obtain new product embodiments. The features disclosed in several detection method or device embodiments provided by the present disclosure can be arbitrarily combined without conflict to obtain new detection method embodiments or device embodiments.

[0080] As described above, this is only a specific implementation manner of the present disclosure. However, the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure can easily think of changes or substitutions, which should all be covered within the protection scope of the present disclosure.

Claims

1. A method for detecting bonding strength, characterized in that, Including: Providing a bonding structure to be measured; wherein, the bonding structure to be measured has a bonding interface; Heating the bonding structure to be measured and detecting crack size information of the bonding interface; Determining the bonding strength of the bonding structure to be measured based on the crack size information.

2. The detection method according to claim 1, wherein The detection method further includes: Before heating the bonding structure to be measured, performing an annealing treatment on the bonding structure to be measured.

3. The detection method according to claim 1, wherein Determining the bonding strength of the bonding structure to be measured based on the crack size information includes: Obtaining a thermal expansion model of the bonding structure to be measured; wherein, the thermal expansion model is used to characterize the correspondence between thermal stress and the crack size information; Based on the thermal expansion model and the crack size information, obtaining the thermal stress of the bonding interface; Based on the thermal stress and the crack size information, determining the bonding strength.

4. The detection method according to claim 3, wherein Establishing the thermal expansion model of the bonding structure to be measured includes: Obtaining a first parameter and a second parameter of the bonding structure to be measured; wherein, the first parameter is used to characterize the thermo-mechanical properties of multiple structures of the bonding interface at different temperatures; the second parameter is used to characterize the sizes of multiple structures of the bonding interface at different temperatures; Based on the first parameter and the second parameter, establishing the correspondence between the thermal stress and the crack size information.

5. The detection method according to claim 4, wherein The first parameter includes at least one of a coefficient of thermal expansion and an elastic modulus.

6. The detection method according to claim 2, wherein The maximum temperature for heating the bonding structure to be measured is greater than the temperature of the annealing treatment; and / or, the heating time of the bonding structure to be measured is greater than the time of the annealing treatment.

7. The detection method according to claim 1, wherein Detecting the crack size information of the bonding interface includes: Using a focused ion beam to determine the width and length of a crack in the lateral direction of a dielectric isolation layer of the bonding interface; or, Using ultrasonic waves to detect size information of a cavity of the bonding interface.

8. A detection device, characterized in that, Including: A detection unit and a data processing unit; wherein, The detection unit is configured to heat a bonding structure to be measured and detect crack size information of the bonding interface of the bonding structure to be measured; The data processing unit is configured to determine the bonding strength of the bonding structure to be measured based on the crack size information.

9. The detection device according to claim 8, wherein, The data processing unit is further configured to establish a thermal expansion model of the bonding structure to be measured; and, based on the thermal expansion model and the crack size information, obtain the thermal stress of the bonding interface; And, based on the thermal stress and the crack size information, determine the bonding strength; wherein, the thermal expansion model is used to characterize the correspondence between thermal stress and the crack size information.

10. A computer-readable storage medium having a computer program or instructions stored thereon, characterized in that, When the computer program or instruction is executed, it causes the computer to execute the detection method according to any one of claims 1 to 7.

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