Substrate processing apparatus, ambient gas control method, substrate processing method, semiconductor device manufacturing method, and recording medium

Abstract

The invention provides a technique capable of reducing the consumption of inert gas. A substrate processing apparatus includes: a first container including a transfer chamber; a second container communicating with the transfer chamber and including a processing chamber for processing the substrate; a first ambient gas adjustment unit capable of adjusting the ambient gas in the first container; a second ambient gas adjustment unit capable of adjusting the ambient gas in the second container; and a control unit capable of controlling the supply amount of the inert gas supplied to the first container in a state where the pressure in the first container is higher than the pressure in the second container such that (a) > (b), (a) > (c), or both. (a) is a moving step of moving the substrate between the first container and the second container. And (b) a processing step for processing the substrate using the second container. And (c) is a standby step in which the substrate is not processed using the second container.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, an ambient gas control method, a substrate processing method, a method for manufacturing a semiconductor device, and a recording medium. Background Art

[0002] As a substrate processing apparatus used in one process of a semiconductor device manufacturing process, there is an apparatus configured to have a processing chamber for processing a substrate and a transfer chamber that can communicate with the processing chamber, and apparatuses for supplying inert gases respectively (for example, refer to Patent Document 1).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2001-345279 Summary of the Invention

[0006] The present disclosure provides a technique capable of reducing the consumption amount of inert gas.

[0007] According to one aspect, there is provided a technique including:

[0008] a first container including a transfer chamber;

[0009] a second container that communicates with the transfer chamber and includes a processing chamber for processing a substrate;

[0010] a first ambient gas adjustment unit capable of adjusting the ambient gas in the first container;

[0011] a second ambient gas adjustment unit capable of adjusting the ambient gas in the second container; and

[0012] a control unit that can control in a state where the pressure in the first container is higher than the pressure in the second container so that the supply amount of the inert gas supplied to the first container becomes one or both of (a) > (b) and (a) > (c),

[0013] (a) is a transfer process of moving the substrate between the first container and the second container,

[0014] (b) is a processing process of processing the substrate using the second container,

[0015] (c) is a standby process of not processing the substrate using the second container.

[0016] Advantages of the Invention

[0017] According to the present disclosure, the consumption amount of inert gas can be reduced. Brief Description of the Drawings

[0018] Figure 1 It is a transverse cross-sectional view showing an overall configuration example of a substrate processing apparatus according to an embodiment of the present disclosure.

[0019] Figure 2 It is a longitudinal cross-sectional view showing an overall configuration example of a substrate processing apparatus according to an embodiment of the present disclosure.

[0020] Figure 3 It is an explanatory diagram schematically showing an example of a schematic configuration of a processing chamber of a substrate processing apparatus according to an embodiment of the present disclosure.

[0021] Figure 4 It is an explanatory diagram schematically showing an example of a schematic configuration of a fourth gas supply unit of a substrate processing apparatus according to an embodiment of the present disclosure.

[0022] Figure 5 It is an explanatory diagram schematically showing an example of a schematic configuration of a fifth gas supply unit of a substrate processing apparatus according to an embodiment of the present disclosure.

[0023] Figure 6 It is an explanatory diagram schematically showing an example of a schematic configuration of a sixth gas supply unit of a substrate processing apparatus according to an embodiment of the present disclosure.

[0024] Figure 7 It is a block diagram schematically showing an example of a schematic configuration of a controller of a substrate processing apparatus according to an embodiment of the present disclosure.

[0025] Figure 8 It is a flowchart showing an outline of a substrate processing procedure according to an embodiment of the present disclosure.

[0026] Figure 9 It is a longitudinal cross-sectional view showing an overall configuration example of a substrate processing apparatus according to another embodiment of the present disclosure.

[0027] Among them, the reference numerals are explained as follows:

[0028] 103 Vacuum transfer chamber, 170 First ambient gas conditioning unit, 170a First gas supply unit, 170b First exhaust unit, 200 Substrate, 202, 202a to 202d Processing chamber, 220 Second exhaust unit, 230 Second gas supply unit, 281 Controller Detailed embodiments

[0029] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings.

[0030] In the following description, as an example, the substrate processing apparatus is used in the manufacturing process of semiconductor devices. Therefore, it is configured to perform a specified process treatment on the substrate to be processed.

[0031] The substrate to be processed is, for example, a silicon wafer (hereinafter simply referred to as "substrate") which is a semiconductor substrate for manufacturing semiconductor devices (semiconductor elements). In addition, in this specification, when the term "substrate" is used, it may refer to "the substrate itself", or it may refer to "a laminate (aggregate) of the substrate and a specified layer, film, etc. formed on its surface" (that is, the substrate including the specified layer, film, etc. formed on the surface). Further, in this specification, when the term "surface of the substrate" is used, it may refer to "the surface (exposed surface) of the substrate itself", or it may refer to "the surface of a specified layer, film, etc. formed on the substrate, that is, the outermost surface of the substrate as a laminate". In this specification, when the term "wafer" is used, it has the same meaning as when the term "substrate" is used. As the specified process treatment performed on the substrate (hereinafter, there are also cases where it is simply referred to as "treatment"), for example, there are oxidation treatment, diffusion treatment, annealing treatment, etching treatment, pre-cleaning treatment, chamber cleaning treatment, film formation treatment, etc. In the present embodiment, in particular, the case of performing film formation treatment is taken as an example.

[0032] In the following description, the attached drawings used are all schematic, and the dimensional relationships of the respective elements shown in the attached drawings, the ratios of the respective elements, etc. are not necessarily the same as in reality. Further, among the multiple attached drawings, the dimensional relationships of the respective elements, the ratios of the respective elements, etc. are not necessarily the same.

[0033] (1) Overall configuration of the substrate processing apparatus

[0034] Refer to Figure 1 and Figure 2 , and the overall configuration of the substrate processing apparatus of the present embodiment will be described.

[0035] Figure 1 is a transverse cross-sectional view showing an example of the overall configuration of the substrate processing apparatus of the present embodiment.

[0036] Figure 2 is a longitudinal cross-sectional view showing an example of the overall configuration of the substrate processing apparatus of the present embodiment.

[0037] As Figure 1 and Figure 2As shown, the substrate processing apparatus illustrated herein has a so-called cluster type with a plurality of processing modules 201a to 201d around the vacuum transfer chamber 103. More specifically, the substrate processing apparatus illustrated in the figure is an apparatus for processing the substrate 200, and thus is generally configured to include a vacuum transfer chamber (transfer module) 103, load lock vacuum chambers (load lock vacuum modules) 122 and 123, an atmospheric transfer chamber (front end module) 121, an IO station (loading port) 105, a plurality of processing modules (process modules) 201a to 201d, and a controller 281 as a control unit.

[0038] Hereinafter, each of these components will be specifically described. In addition, in the following description, the X1 direction of front, back, left, and right is the right, the X2 direction is the left, the Y1 direction is the front, and the Y2 direction is the back.

[0039] (Vacuum Transfer Chamber)

[0040] The vacuum transfer chamber 103 functions as a "transfer chamber" that becomes a transfer space for the substrate 200 under negative pressure. The frame 101 constituting the vacuum transfer chamber 103 is formed in a hexagonal shape in a plan view. The frame 101 is also referred to as the "first container". Then, the load lock vacuum chambers 122 and 123 and each of the processing modules 201a to 201d are connected to each side of the hexagon via gate valves 160, 165, and 161a to 161d, respectively.

[0041] The vacuum transfer robot 112, which is a transfer robot for transferring (transferring) the substrate 200 under negative pressure, is provided at a substantially central portion of the vacuum transfer chamber 103 with the flange 115 as a base. The vacuum transfer robot 112 is configured to be able to be lifted and lowered by the elevator 116 and the flange 115 while maintaining the airtightness of the vacuum transfer chamber 103 (see Figure 2 ).

[0042] In the vacuum transfer chamber 103, a first ambient gas regulating unit 170 for regulating the ambient gas in the vacuum transfer chamber 103 is provided. The first ambient gas regulating unit 170 has a first gas supply unit 170a capable of supplying an inert gas to the vacuum transfer chamber 103 and a first exhaust unit 170b capable of exhausting the ambient gas in the vacuum transfer chamber 103 (see Figure 2 ).

[0043] The first gas supply unit 170a has a first gas supply pipe 171 communicating with the inside of the vacuum transfer chamber 103. Starting from the upstream direction, a first gas source 172, a mass flow controller (MFC) 173 as a flow controller (flow control unit), and a valve 174 as an on-off valve are sequentially provided in the first gas supply pipe 171. The first gas source 172 is an inert gas source. The inert gas is, for example, nitrogen (N2) gas. The first gas supply unit 170a is mainly constituted by the first gas supply pipe 171, the MFC 173, and the valve 174.

[0044] The first exhaust unit 170b has an exhaust pipe 175 communicating with the inside of the vacuum transfer chamber 103. An APC (Auto Pressure Controller) 176 as a pressure controller for controlling the inside of the vacuum transfer chamber 103 to a specified pressure is provided in the exhaust pipe 175. The APC 176 has a valve body (not shown) capable of adjusting the opening degree, and adjusts the flow conductance of the exhaust pipe 175 according to an instruction from the controller 281. In addition, in the exhaust pipe 175, a valve 177 is provided on the downstream side of the APC 176. The exhaust pipe 175, the valve 177, and the APC 176 are referred to as the first exhaust unit 170b. Moreover, a DP (Dry Pump) 178 is provided downstream of the exhaust pipe 175. The DP 178 discharges the ambient gas in the vacuum transfer chamber 103 via the exhaust pipe 175.

[0045] A first pressure measurement unit 179 capable of measuring the pressure inside the vacuum transfer chamber 103 is provided in the vacuum transfer chamber 103. The first pressure measurement unit 179 can be constituted by, for example, a pressure sensor. The measurement result of the pressure based on the first pressure measurement unit 179 is output to the controller 281 described later.

[0046] (Load Interlock Vacuum Chamber)

[0047] The load interlock vacuum chamber 122 for loading and the load interlock vacuum chamber 123 for unloading are respectively connected to two front-side sidewalls among the six sidewalls of the frame 101 constituting the vacuum transfer chamber 103 via gate valves 160 and 165. A substrate placement table 150 for the loading chamber is provided in the load interlock vacuum chamber 122, and a substrate placement table 151 for the unloading chamber is provided in the load interlock vacuum chamber 123. In addition, each of the load interlock vacuum chambers 122 and 123 is configured to be able to withstand negative pressure.

[0048] In each of the load interlock vacuum chambers 122 and 123, a third environmental gas adjustment unit 180 for adjusting the environmental gas in the load interlock vacuum chambers 122 and 123 is provided. The third environmental gas adjustment unit 180 includes a third gas supply unit 180a capable of supplying an inert gas to the load interlock vacuum chambers 122 and 123, and a third exhaust unit 180b capable of exhausting the environmental gas in the load interlock vacuum chambers 122 and 123 (see Figure 2 ).

[0049] The third gas supply unit 180a has a third gas supply pipe 181 communicating with the inside of the load interlock vacuum chambers 122 and 123. From the upstream direction, a third gas source 182, an MFC 183 as a flow controller (flow control unit), and a valve 184 as an on-off valve are sequentially provided in the third gas supply pipe 181. The third gas source 182 is an inert gas source. The inert gas is, for example, nitrogen (N2) gas. The third gas source 182 may share the first gas source 172 of the first gas supply unit 170a. The third gas supply unit 180a is mainly constituted by the third gas supply pipe 181, the MFC 183, and the valve 184.

[0050] The third exhaust unit 180b has an exhaust pipe 185 communicating with the inside of the load interlock vacuum chambers 122 and 123. An APC 186 as a pressure controller for controlling the inside of the load interlock vacuum chambers 122 and 123 to a specified pressure is provided in the exhaust pipe 185. The APC 186 has a valve body (not shown) capable of adjusting the opening degree, and adjusts the conductance of the exhaust pipe 185 according to an instruction from the controller 281. In addition, in the exhaust pipe 185, a valve 187 is provided on the downstream side of the APC 186. The exhaust pipe 185, the valve 187, and the APC 186 are collectively referred to as the third exhaust unit 180b. Moreover, a DP 188 is provided downstream of the exhaust pipe 185. The DP 188 exhausts the environmental gas in the load interlock vacuum chambers 122 and 123 via the exhaust pipe 185. The DP 188 may also share the DP 178 of the first exhaust unit 170b.

[0051] (Atmospheric transfer chamber)

[0052] The atmospheric transfer chamber 121 is connected to the front sides of the load interlock vacuum chambers 122 and 123 via gate valves 128 and 129. The atmospheric transfer chamber 121 is used at approximately atmospheric pressure.

[0053] An atmospheric transfer robot 124 for transferring the substrate 200 is provided in the atmospheric transfer chamber 121. The atmospheric transfer robot 124 is configured to be lifted and lowered by a lift 126 provided in the atmospheric transfer chamber 121, and is configured to reciprocate in the left-right direction by a linear actuator 132 (see Figure 2 ).

[0054] Above the atmospheric transfer chamber 121, a cleaning unit 118 for supplying a cleaning gas is provided (see Figure 2 ). In addition, on the left side of the atmospheric transfer chamber 121, a device (hereinafter referred to as a "pre-aligner") 106 for matching the notch or the orientation plane formed on the substrate 200 is provided (see Figure 1 ).

[0055] (IO station)

[0056] On the front side of the frame 125 of the atmospheric transfer chamber 121, a substrate loading / unloading port 134 for loading and unloading the substrate 200 with respect to the atmospheric transfer chamber 121 and a FOUP opener 108 are provided. On the side opposite to the FOUP opener 108 across the substrate loading / unloading port 134 and outside the frame 125, an IO station 105 is provided.

[0057] On the IO station 105, a plurality of FOUPs (Front Opening Unified Pods: hereinafter referred to as "FOUPs") 100 for storing a plurality of substrates 200 are mounted. The FOUP 100 is used as a carrier for transferring the substrate 200 such as a silicon (Si) substrate. It is configured to store the unprocessed substrate 200 or the processed substrate 200 in a horizontal posture inside the FOUP 100.

[0058] The FOUP 100 on the IO station 105 is opened and closed by the FOUP opener 108. The FOUP opener 108 includes a closer 142 for opening and closing the lid 100a of the FOUP 100 and capable of closing the substrate loading / unloading port 134, and a drive mechanism 109 for driving the closer 142.

[0059] (Processing module)

[0060] The processing modules 201a to 201d for performing desired processing on the substrate 200 are radially connected to each of the remaining four side walls of the six side walls of the frame 101 constituting the vacuum transfer chamber 103 via gate valves 161a to 161d with the vacuum transfer chamber 103 as the center. The processing modules 201a to 201d are each composed of a cold-wall type processing container 203a to 203d, and one processing chamber 202a to 202d is respectively formed. The processing container 202 is also referred to as a "second container". Inside each of the processing chambers 202a to 202d, processing on the substrate 200 is performed as one process of the manufacturing process of semiconductors and semiconductor devices. As the processing performed in each of the processing chambers 202a to 202d, for example, various substrate processes such as film formation on the substrate, oxidation, nitridation, carbonization, modification, etc. of the substrate surface, film formation of silicide, metal, etc., etching of the substrate surface, and reflow processing are cited.

[0061] In addition, the detailed configurations of the processing modules 201a to 201d will be described later.

[0062] (Controller)

[0063] The controller 281 functions as a control unit (control part) that controls the operations of the respective parts constituting the substrate processing apparatus. Therefore, the controller 281 as the control part is constituted by a computer device having a CPU (Central Processing Unit) or a RAM (Random Access Memory), etc.

[0064] In addition, the detailed configuration of the controller 281 will be described later.

[0065] (2) Configuration of Processing Module

[0066] Next, the detailed configurations of the processing modules 201a to 201d will be described.

[0067] The processing modules 201a to 201d each function as a single-sheet type substrate processing apparatus and all have the same configuration.

[0068] Here, taking one of the processing modules 201a to 201d as an example, the specific configuration will be described. Taking one of the processing modules 201a to 201d as an example, therefore, in the following description, the processing modules 201a to 201d will be only described as "processing module 201", and for the cold-wall type processing containers 203a to 203d constituting the processing modules 201a to 201d, they will also be only described as "processing container 203", the processing chambers 202a to 202d formed in the respective processing containers 203a to 203d will be only described as "processing chamber 202", and moreover, for the gate valves 161a to 161d respectively corresponding to the processing modules 201a to 201d, they will also be only described as "gate valve 161".

[0069] Figure 3 It is an explanatory diagram schematically showing an example of the schematic configuration of the processing chamber of the substrate processing apparatus of the present embodiment.

[0070] (Processing Container)

[0071] The processing module 201 is composed of a cold-wall type processing container 20 in the above-described manner. The processing container (hereinafter simply referred to as "container") 203 is configured as a closed container having, for example, a circular and flat cross-section. In addition, the container 203 is made of a metal material such as aluminum (Al) or stainless steel (SUS). Inside the container 203, there is a processing chamber 202 that forms a processing space for processing a substrate 200 such as a silicon wafer. Below the processing chamber 202, a transfer space 202a is formed through which the substrate 200 passes when the substrate 200 is transferred to the processing chamber 202.

[0072] On the side surface of the container 203, there is a substrate loading / unloading port 206 adjacent to the gate valve 205, and the substrate 200 moves between the substrate loading / unloading port 206 and the vacuum transfer chamber 103. On the bottom of the container 203, a plurality of lift pins 207 are provided. Moreover, an exhaust pipe 222 described later is provided.

[0073] In the exhaust pipe 222, a second pressure measurement unit 226 capable of measuring the pressure inside the processing chamber 202 is provided. The second pressure measurement unit 226 can be configured using, for example, a pressure sensor. The measurement result of the pressure based on the second pressure measurement unit 226 is output to a controller 281 described later. In addition, as long as the second pressure measurement unit 226 can measure the pressure inside the processing chamber 202, it may not be arranged in the exhaust pipe 222 but in other parts.

[0074] In the container 203, a substrate support portion 210 for supporting the substrate 200 is arranged. The substrate support portion 210 mainly includes a substrate placement surface 211 for placing the substrate 200, a substrate placement table 212 having the substrate placement surface 211 on its surface, and a heater 213 as a heating portion provided inside the substrate placement table 212. On the substrate placement table 212, through holes 214 through which the lift pins 207 pass are respectively provided at positions corresponding to the lift pins 207.

[0075] A wiring 215 for supplying power is connected to the heater 213. The wiring 215 is connected to a heater control unit 216.

[0076] The heater control unit 216 is electrically connected to a controller 281 described later. The controller 281 sends control information to the heater control unit 216. The heater control unit 216 controls the heater 213 with reference to the received control information.

[0077] The substrate placement table 212 is supported by a shaft 217. The shaft 217 passes through the bottom of the container 203 and is connected to a lifting portion 218 outside the container 203.

[0078] The lifting unit 218 mainly includes a support shaft 218a for supporting the support shaft 217, and an operating unit 218b for lifting or rotating the support shaft 218a. The operating unit 218b has a lifting mechanism including, for example, a motor for achieving lifting, and a rotating mechanism such as a gear for rotating the support shaft 218a (but neither is shown). An indicating unit (neither is shown) for sending a lifting / rotation instruction to the operating unit 218b can also be provided as part of the lifting unit 218. The indicating unit is electrically connected to the controller 281. The indicating unit controls the operating unit 218b based on the instruction of the controller 281.

[0079] By operating the lifting unit 218, the shaft 217 and the substrate mounting table 212 are lifted, and the substrate mounting table 212 can lift the substrate 200 placed on the substrate mounting surface 211. In addition, the periphery of the lower end portion of the shaft 217 is covered by the bellows 219, whereby it is hermetically held in the processing space 202.

[0080] When transporting the substrate 200, the substrate mounting table 212 descends to the transport position where the substrate mounting surface 211 faces the substrate loading / unloading port 206. When processing the substrate 200, as Figure 3 shown, it ascends to the processing position where the substrate 200 is within the processing space 202.

[0081] A gas inlet hole 231 is provided in the upper part (upstream side) of the processing space 202. For example, the gas inlet hole 231 is provided at the top of the container 203.

[0082] (Ambient gas conditioning unit)

[0083] The gas inlet hole 231 is configured to communicate with a second gas supply unit 230 capable of supplying gas to the processing chamber 202. The second gas supply unit 230 has a fourth gas supply unit 240 and a fifth gas supply unit 250 capable of supplying processing gas to the processing chamber 202, and a sixth gas supply unit 260 capable of supplying inert gas to the processing chamber 202. In Figure 3 it, only one gas inlet hole 231 is shown, but gas inlet holes can also be provided for each gas supply unit.

[0084] In addition, an exhaust pipe 222 provided at the bottom of the container 203 is configured to communicate with a second exhaust unit 220 capable of adjusting the ambient gas in the processing chamber 202.

[0085] In such a manner that the second gas supply unit 230 and the second exhaust unit 220 are provided, a second ambient gas conditioning unit for adjusting the ambient gas in the processing chamber 202 is constituted. Hereinafter, the fourth gas supply unit 240, the fifth gas supply unit 250, the sixth gas supply unit 260, and the second exhaust unit 220 included in the second gas supply unit 230 will be described in detail.

[0086] (Fourth gas supply unit)

[0087] Use Figure 4 To describe the fourth gas supply unit 240. The fourth gas supply unit 240 includes a fourth gas supply pipe 241. The fourth gas supply pipe 241 corresponds to Figure 3 A, and is configured to supply gas to the processing chamber 202.

[0088] From the upstream direction, a fourth gas source 242, an MFC 243 as a flow controller (flow control unit), and a valve 244 as an on-off valve are sequentially provided in the fourth gas supply pipe 241.

[0089] The fourth gas source 242 is a source of a first gas containing a first element (also referred to as a "first element-containing gas"). The first element-containing gas is a raw material gas, that is, one of the processing gases. Here, the first element is, for example, silicon (Si). That is, the first element-containing gas is, for example, a silicon-containing gas. Specifically, as the silicon-containing gas, for example, silane (SiH4) gas can be used. When SiH4 gas is used, the SiH4 gas thermally decomposes, and a polysilicon film for forming a seat polycrystalline film is formed on the surface of the substrate 200.

[0090] The fourth gas supply unit 240 (also referred to as a silicon-containing gas supply system) is mainly constituted by the fourth gas supply pipe 241, the MFC 243, and the valve 244.

[0091] (Fifth gas supply unit)

[0092] Next, use Figure 5 To describe the fifth gas supply unit 250. The fifth gas supply unit 250 includes a fifth gas supply pipe 251. The fifth gas supply pipe 251 corresponds to Figure 3 B, and is configured to supply gas to the processing chamber 202.

[0093] From the upstream direction, a fifth gas source 252, an MFC 253 as a flow controller (flow control unit), and a valve 254 as an on-off valve are sequentially provided in the fifth gas supply pipe 251.

[0094] The fifth gas source 252 is a source of a second gas containing a second element (hereinafter, also referred to as a "second element-containing gas"). The second element-containing gas is one of the processing gases.

[0095] Here, the second element-containing gas contains a second element different from the first element. As the second element, for example, it is oxygen (O). Here, the second element-containing gas is described as an oxygen-containing gas, for example. As the oxygen-containing gas, for example, there is O2.

[0096] The fifth gas supply unit 250 is mainly constituted by the fifth gas supply pipe 251, the MFC 253, and the valve 254.

[0097] In addition, when forming a film on the substrate 200 using the first gas monomer, the fifth gas supply unit 250 may not be provided.

[0098] (Sixth gas supply unit)

[0099] Next, use Figure 6 to describe the sixth gas supply unit 260. The sixth gas supply unit 260 includes a sixth gas supply pipe 261. The sixth gas supply pipe 261 corresponds to C of Figure 3 and is configured to supply gas to the processing chamber 202.

[0100] Starting from the upstream direction, a sixth gas source 262, an MFC 263 as a flow controller (flow control unit), and a valve 264 as an on-off valve are sequentially provided in the sixth gas supply pipe 261.

[0101] The sixth gas source 262 is an inert gas source. The inert gas is a gas that discharges the ambient gas in the container 203 or acts as a carrier gas for the first gas or the second gas. For example, it is nitrogen (N2) gas.

[0102] The sixth gas supply unit 260 is mainly constituted by the sixth gas supply pipe 261, the MFC 263, and the valve 264.

[0103] The fourth gas supply unit 240, the fifth gas supply unit 250, and the sixth gas supply unit 260 described above are collectively referred to as the second gas supply unit 230.

[0104] (Second exhaust unit)

[0105] Next, describe Figure 3 the second exhaust unit 220 described above.

[0106] The exhaust pipe 222 is connected to the container 203 in a manner communicating with the processing space 202. An APC 223 as a pressure controller for controlling the inside of the processing space 202 to a specified pressure is provided in the exhaust pipe 222.

[0107] The APC 223 has a valve body (not shown) capable of adjusting the opening degree, and adjusts the conductance of the exhaust pipe 222 according to an instruction from the controller 281. In addition, in the exhaust pipe 222, a valve 224 is provided on the upstream side of the APC 223. The exhaust pipe 222, the valve 224, and the APC 223 are collectively referred to as the second exhaust unit 220.

[0108] Moreover, a DP225 is provided downstream of the exhaust pipe 222. The DP225 discharges the ambient gas in the processing space 202 via the exhaust pipe 222.

[0109] (3) Configuration of the controller

[0110] Next, the controller 281 will be described using Figure 7 as an illustration.

[0111] The controller 281, which serves as a control unit, is configured as a computer including a CPU (Central Processing Unit) 401, a RAM (Random Access Memory) 402, a storage unit 403 serving as a storage device, and an I / O port 404. The RAM 402, the storage unit 403, and the I / O port 404 are configured to be able to exchange data with the CPU 401 via an internal bus 405.

[0112] An upper device 270 is provided with a network transceiver unit 282 connected via a network. The network transceiver unit 282 can receive information related to the processing history and processing schedule of the substrates 200 in a batch, etc.

[0113] The storage unit 403 is constituted by, for example, a flash memory, an HDD (Hard Disk Drive), etc. In the storage unit 403, a process recipe that records the steps, conditions, etc. of substrate processing, and a control program that controls the operation of the substrate processing apparatus are stored in a readable manner.

[0114] In addition, the process recipe is combined in such a way that the controller 281 can execute each step in the subsequent substrate processing process to obtain a specified result, and functions as a program. Hereinafter, the process recipe, the control program, etc. are collectively referred to as programs. In addition, in this specification, when using the term "program", there are cases where it only includes the process recipe alone, cases where it only includes the control program alone, or cases where it includes both. In addition, the RAM 402 is configured as a memory area (work area) that temporarily holds programs, data, etc. read by the CPU 401.

[0115] The I / O port 404 is connected to each component of the substrate processing apparatus such as the gate valve 205, the lifting unit 218, each pressure regulator, each pump, and the heater control unit 216.

[0116] The CPU 401 is configured to read and execute a control program from the storage unit 403, and read a process recipe from the storage unit 403 according to the input of an operation command from the input / output device 283 or the like. Moreover, the CPU 401 is configured to be able to control the opening / closing operation of the gate valve 205, the lifting operation of the lifting unit 218, the heater control unit 216, the on / off control of each pump, the flow rate adjustment operation of the MFC, valves, etc. in accordance with the content of the read process recipe.

[0117] In addition, by executing the control program read from the storage unit 403, the CPU 401 can function as a pressure calculation unit 401a that calculates the pressure difference between the vacuum transfer chamber 103 and the processing chamber 202. The pressure calculation unit 401a is configured to calculate the pressure difference between the vacuum transfer chamber 103 and the processing chamber 202 based on the measurement result of the pressure by the first pressure measurement unit 179 and the measurement result of the pressure by the second pressure measurement unit 226.

[0118] In addition, the controller 281 can be configured as the controller 281 of the present technology by installing a program or the like on a computer by using an external storage device (for example, a magnetic disk such as a hard disk, an optical disc such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 284 that stores the above program. In addition, the means for supplying a program to a computer is not limited to the case of supplying via the external storage device 284. For example, communication means such as the Internet or a dedicated line can be used to supply a program without passing through the external storage device 284. In addition, the storage unit 403 and the external storage device 284 are configured as recording media that can be read by a computer. Hereinafter, these will also be collectively referred to as recording media. In addition, in this specification, the case where the term recording medium is used may include only the storage unit 403 alone, only the external storage device 284 alone, or both.

[0119] (4) Substrate processing step

[0120] Next, use Figure 8 to describe the step of forming a film on the substrate 200 using the substrate processing apparatus having the above configuration as one step of the semiconductor manufacturing process. In addition, in the following description, the operations of the respective parts constituting the substrate processing apparatus are controlled by the controller 281.

[0121] (Substrate loading step S202)

[0122] Describe the substrate loading step S202. Here, the substrate 200 waiting in the vacuum transfer chamber 103 is loaded into the processing chamber 202 of the processing module 201.

[0123] Specifically, the substrate stage 212 is lowered to the transfer position (transfer position) of the substrate 200, and the lift pins 207 are passed through the through holes 214 of the substrate stage 212. As a result, the lift pins 207 protrude from the surface of the substrate stage 212 by a predetermined height.

[0124] Next, the gate valve 205 is opened to connect the transfer space 202a with the adjacent vacuum transfer chamber 103. Then, the vacuum transfer robot 112 places the substrate 200 on the lift pins 207.

[0125] After the substrate 200 is placed on the lift pins 207, the substrate stage 212 is raised, and the substrate 200 is placed on the substrate placement surface 211, and further, as Figure 3 shown, it is raised to the substrate processing position.

[0126] (First pressure adjustment step S203)

[0127] The first pressure adjustment step S203 will be described. Here, the pressure in the processing chamber 202 is adjusted to the substrate processing pressure.

[0128] Specifically, after the substrate stage 212 is moved to the substrate processing position, ambient gas is discharged from the processing chamber 202 through the exhaust pipe 222, and the pressure in the processing chamber 202 is adjusted so that the inside of the processing chamber 202 becomes the specified substrate processing pressure.

[0129] In addition, the details of the specific pressure adjustment in the first pressure adjustment step S203 will be described later.

[0130] (Film formation step S204)

[0131] Next, the film formation step S204 will be described.

[0132] Here, the substrate 200 is heated by the heater 213 while being placed on the substrate placement surface 211. After the pressure in the processing chamber 202 is adjusted to the specified substrate processing pressure and the temperature of the substrate 200 reaches a specified temperature, for example, from 400 °C to 600 °C, a processing gas is supplied from the gas supply unit to the substrate to form a specified film.

[0133] For example, the first gas supply step of supplying a raw material gas as a first element-containing gas to the substrate 200 and the second gas supply step of supplying a reaction gas as a second element-containing gas to the substrate 200 are repeated a specified number of times.

[0134] In this way, in the film formation step S204, for example, a silicon-containing gas is supplied to the substrate 200, and a Si-containing film is formed on the substrate 200. At this time, an oxygen-containing gas may also be supplied to form a SiO film.

[0135] (Second Pressure Adjustment Process S205)

[0136] Describe the second pressure adjustment process S205. Here, after the film formation process S204 of forming a film on the substrate 200, the pressure in the processing chamber 202 is adjusted to the substrate transfer pressure.

[0137] Specifically, for example, after repeatedly performing the first gas supply process and the second gas supply process a specified number of times to form a film with a desired film thickness, the ambient gas is exhausted from the processing chamber 202 via the exhaust pipe 222, and the pressure in the processing chamber 202 is adjusted so that the inside of the processing chamber 202 becomes the specified substrate transfer pressure.

[0138] In addition, the specific pressure adjustment in the second pressure adjustment process S205 will be described in detail later.

[0139] (Substrate Unloading Process S206)

[0140] Next, describe the substrate unloading process S206. Here, after adjusting the inside of the processing chamber 202 to the specified substrate transfer pressure, the substrate stage 212 is lowered and moved to the transfer position. After moving the substrate 200 to the transfer position, the gate valve 205 is opened, and the substrate 200 is unloaded from the transfer space 202a to the vacuum transfer chamber 103.

[0141] (5) Ambient Gas Control

[0142] Next, describe the ambient gas control in each of the above series of processes S202 to S206. In addition, in the following description, the operations for ambient gas control are also controlled by the controller 281.

[0143] In the substrate loading process S202 and the substrate unloading process S206, the substrate 200 is loaded and unloaded between the vacuum transfer chamber 103 and the processing chamber 202 of the processing module 201. At this time, in the vacuum transfer chamber 103, in order to prevent contamination caused by the diffusion of ambient gas from the processing chamber 202 side, the first gas supply unit 170a of the first ambient gas adjustment unit 170 supplies an inert gas into the vacuum transfer chamber 103, and maintains a state where the pressure in the vacuum transfer chamber 103 is higher than the pressure in the processing chamber 202.

[0144] However, if the supply of the inert gas is always carried out, there is a concern that the consumption of the inert gas will increase. In particular, since the volume of the vacuum transfer chamber 103 is larger than that of the processing chamber 202, the increase in consumption is more significant.

[0145] Therefore, in the present embodiment, the ambient gas control described below is performed.

[0146] (Outline of Ambient Gas Control)

[0147] As the environmental gas control in this embodiment, while maintaining the pressure in the vacuum transfer chamber 103 > the pressure in the processing chamber 202, at least one of the following (i) to (iv) is implemented.

[0148] (i) Regarding the gas supply amount to the vacuum transfer chamber 103, it is set that during substrate loading and unloading > during substrate processing. Substrate loading and unloading refers to when performing the transfer process of moving the substrate 200 between the vacuum transfer chamber 103 and the processing chamber 202, for example, corresponding to when loading the substrate during the substrate loading process S202 or unloading the substrate during the substrate unloading process S206. Substrate processing refers to when performing the processing process of processing the substrate 200 in the processing chamber 202, for example, corresponding to when forming a film during the film forming process S204.

[0149] (ii) Regarding the gas supply control to the vacuum transfer chamber 103, during substrate processing, the gas supply is stopped during device standby or the gas supply amount is reduced compared to during substrate loading and unloading. Device standby refers to when performing the standby process of not processing the substrate 200 in the processing chamber 202, for example, corresponding to when not performing each process S202 to S206.

[0150] (iii) Regarding the gas exhaust control to the vacuum transfer chamber 103, during substrate processing, the gas exhaust is stopped during device standby or the gas exhaust amount is reduced compared to during substrate loading and unloading.

[0151] (iv) Regarding the gas supply / exhaust control to the vacuum transfer chamber 103, during substrate processing, during device standby, the gas supply and the gas exhaust are stopped. Due to the stop, the environmental gas in the vacuum transfer chamber 103 remains in the vacuum transfer chamber 103.

[0152] By implementing at least one of the above (i) to (iv), or appropriately combining multiple, the gas supply to the vacuum transfer chamber 103 can be reduced, and the gas consumption can be reduced compared to the case of continuous supply.

[0153] (Example of the processing flow of environmental gas control)

[0154] Here, an example of the above environmental gas control will be further described in detail corresponding to each process S202 to S206.

[0155] In the substrate loading process S202, the substrate 200 to be processed is loaded from the vacuum transfer chamber 103 into the processing chamber 202 of the processing module 201. Then, after loading the substrate 200, the gate valve 205 between the vacuum transfer chamber 103 and the processing module 201 is closed.

[0156] Thereafter, in the first pressure adjustment step S203, the pressure in the vacuum transfer chamber 103 is adjusted to be greater than the pressure in the processing chamber 202 and this state is maintained. At this time, the pressure in the processing chamber 202 is set to the specified substrate processing pressure PP1. Accordingly, the pressure in the vacuum transfer chamber 103 becomes a pressure PW1 that is higher than the substrate processing pressure PP1.

[0157] In the film forming step S204, a film is formed on the substrate 200. At this time, the pressure in the processing chamber 202 is maintained at the substrate processing pressure PP1. On the other hand, regarding the pressure control in the vacuum transfer chamber 103, while maintaining the state where the pressure in the vacuum transfer chamber 103 > the pressure in the processing chamber 202, the gas supply and gas exhaust in the vacuum transfer chamber 103 are stopped. Alternatively, even if not stopped, the gas supply amount and gas exhaust amount in the vacuum transfer chamber 103 are reduced to an extent that can maintain the pressure in the vacuum transfer chamber 103 > the pressure in the processing chamber 202.

[0158] After the film formation on the substrate 200 is completed, in the second pressure adjustment step S205, the pressure in the processing chamber 202 is set to the specified substrate transfer pressure PP3. At this time, regarding the pressure in the vacuum transfer chamber 103, the gas supply and gas exhaust in the vacuum transfer chamber 103 are turned on again, and set to a pressure PW2 that is higher than the substrate transfer pressure PP3, maintaining the state where the pressure in the vacuum transfer chamber 103 > the pressure in the processing chamber 202. In addition, this state can also be maintained, for example, by supplying an inert gas into the vacuum transfer chamber 103, or by sharing the first gas supply unit 170a and the first exhaust unit 170b (i.e., both gas supply and gas exhaust).

[0159] Then, in the substrate unloading step S206, the gate valve 205 between the vacuum transfer chamber 103 and the processing module 201 is opened, and the processed substrate 200 is unloaded from the processing module 201 into the vacuum transfer chamber 103, ending a series of substrate processing steps for the substrate 200.

[0160] By maintaining the state where the pressure in the vacuum transfer chamber 103 > the pressure in the processing chamber 202 through this ambient gas control, it is possible to prevent contamination in the vacuum transfer chamber 103 caused by the diffusion of ambient gas from the processing chamber 202 side. Moreover, it is possible to prevent contamination from the processing chamber 202 side and reduce the gas supply to the vacuum transfer chamber 103, and compared with the case of continuous supply, the gas consumption can be reduced.

[0161] (Specific example of ambient gas control)

[0162] Next, specific examples will be given to further elaborate on the environmental gas control in this embodiment. Here, as specific examples, the first aspect to the twentieth aspect will be illustrated in sequence.

[0163] (First aspect)

[0164] The first aspect corresponds to the basic processing method of the environmental gas control in this embodiment.

[0165] When focusing on the substrate 200, the substrate processing steps through the above-mentioned steps S202 to S206 can be classified into the following steps (a) to (c).

[0166] (a) A moving step of moving the substrate 200 between the vacuum transfer chamber 103 and the processing chamber 202

[0167] (b) A processing step of processing the substrate 200 in the processing chamber 202

[0168] (c) A standby step of not processing the substrate 200 in the processing chamber 202

[0169] In the case of having the steps (a) to (c), as the environmental gas control of the first aspect, the following control process is performed. Specifically, the state where the pressure in the vacuum transfer chamber 103 > the pressure in the processing chamber 202 is maintained, and in the "processing step" or "standby step", compared with the "moving step", the gas supply amount to the vacuum transfer chamber 103 is reduced. Here, this "reduction" also includes not supplying gas (i.e., stopping gas supply).

[0170] That is to say, as the environmental gas control of the first aspect, a technology is provided, which has:

[0171] A processing chamber 202 for processing the substrate 200;

[0172] A vacuum transfer chamber 103 that can communicate with the processing chamber 202;

[0173] A first environmental gas regulating unit 170, which has a first gas supply unit 170a capable of supplying an inert gas to the vacuum transfer chamber 103 and a first exhaust unit 170b capable of exhausting the environmental gas in the vacuum transfer chamber 103;

[0174] A second environmental gas regulating unit, which has a second gas supply unit 230 capable of supplying a processing gas to the processing chamber 202 and a second exhaust unit 220 capable of regulating the environmental gas in the processing chamber 202; and

[0175] A controller 281 that controls to make the supply amount of the inert gas supplied to the vacuum transfer chamber 103 satisfy either or both of (a) > (b) and (a) > (c) in a state where the pressure in the vacuum transfer chamber 103 is higher than the pressure in the processing chamber 202.

[0176] By controlling the ambient gas in this way, it is possible to prevent the ambient gas in the processing chamber 202 from flowing into the vacuum transfer chamber 103. For example, in the processing chamber 202 after the processing step, gases, particles, etc. used for substrate processing may remain. Therefore, when these enter the vacuum transfer chamber 103, they may adhere to the inner wall of the vacuum transfer chamber 103 or the substrate 200 in the vacuum transfer chamber 103. In contrast, through the ambient gas control of the first aspect, by increasing the pressure in the vacuum transfer chamber 103 to be higher than the pressure in the processing chamber 202, the ambient gas in the processing chamber 202 is prevented from flowing into the vacuum transfer chamber 103.

[0177] Moreover, according to the ambient gas control of the first aspect, it is possible to prevent the ambient gas in the processing chamber 202 from flowing into the vacuum transfer chamber 103, and compared with the case of continuously supplying gas (i.e., maintaining the flow of inert gas relative to the vacuum transfer chamber 103), the supply amount of the inert gas supplied to the vacuum transfer chamber 103 can be reduced.

[0178] This is particularly useful in the case where there are multiple processing chambers 202a - 202d and different gases are used in each processing chamber.

[0179] (Second aspect)

[0180] Based on the above first aspect, the second aspect controls in such a way that the supply of gas and the exhaust of gas are stopped, and the ambient gas in the vacuum transfer chamber 103 is left in the vacuum transfer chamber 103.

[0181] Specifically, as the ambient gas control of the second aspect,

[0182] In the above step (b) or (c), a technique is provided where the first gas supply unit 170a stops supplying the inert gas to the vacuum transfer chamber 103, and / or the first exhaust unit 170b stops exhausting the ambient gas in the vacuum transfer chamber 103.

[0183] That is, as the ambient gas control of the second aspect, either the supply of the inert gas is stopped or the exhaust of the ambient gas is stopped, or both are performed.

[0184] According to the environmental gas control of this processing method, by stopping the supply of the inert gas, it is possible to more reliably reduce the supply amount of the inert gas supplied to the vacuum transfer chamber 103. In addition, by stopping the exhaust from the vacuum transfer chamber 103, it is possible to reliably maintain the state where the pressure in the vacuum transfer chamber 103 is higher than the pressure in the processing chamber 202.

[0185] (Third aspect)

[0186] In the case of performing both the supply stop of the inert gas and the exhaust stop of the environmental gas described in the above second aspect, instead of simultaneously performing the supply stop of the inert gas and the exhaust stop of the environmental gas, a specified time difference is adopted.

[0187] Specifically, as the environmental gas control of the third aspect, a technique is provided.

[0188] In the process of the above (b) or (c), the first environmental gas regulating unit 170 stops supplying the inert gas to the vacuum transfer chamber 103 and stops exhausting the environmental gas in the vacuum transfer chamber 103 with a specified time difference.

[0189] The specified time difference can be set in advance, as long as it is within the period of the process of (b) or (c), and there is no particular limitation. In addition, as long as it is not performed simultaneously but with a specified time difference, the order (which one is performed first) is not limited.

[0190] In the case of performing both the supply stop of the inert gas and the exhaust stop of the environmental gas, if the supply stop of the inert gas and the exhaust stop of the environmental gas are performed simultaneously, the environmental gas in the vacuum transfer chamber 103 may be disturbed, resulting in the flying up of particles in the vacuum transfer chamber 103. In contrast, according to the environmental gas control of the third aspect, by performing the supply stop of the inert gas and the exhaust stop of the environmental gas with a specified time difference, it is possible to suppress the flying up of particles in the vacuum transfer chamber 103, which is very useful in suppressing the intrusion of foreign substances into the vacuum transfer chamber 103.

[0191] (Fourth aspect)

[0192] The fourth aspect specifically stipulates the specified time difference described in the above third aspect.

[0193] That is, as the environmental gas control of the fourth aspect, a technique is provided.

[0194] The specified time difference is the time capable of maintaining the state where the pressure in the vacuum transfer chamber 103 is higher than the pressure in the processing chamber 202.

[0195] The specified time can be derived in advance based on information such as the volume of the vacuum transfer chamber 103, the pressure in the processing chamber 202 during the processing step, the processing capabilities of the first gas supply unit 170a and the first exhaust unit 170b, and the like.

[0196] According to the ambient gas control of this processing method, by specifically setting the specified time difference, the state where the pressure in the vacuum transfer chamber 103 is higher than the pressure in the processing chamber 202 can be reliably maintained, which is very useful in suppressing the intrusion of foreign matter into the vacuum transfer chamber 103.

[0197] (Fifth aspect)

[0198] Based on the above first aspect, in the case of discharging the ambient gas in the vacuum transfer chamber 103, the exhaust control is performed by the processing method described below.

[0199] Specifically, as the ambient gas control of the fifth aspect, a technique is provided.

[0200] The amount of ambient gas exhausted from the vacuum transfer chamber 103 becomes one or both of (a) < (b) and (a) < (c).

[0201] That is, in the case of discharging the ambient gas in the vacuum transfer chamber 103, the exhaust amount of the ambient gas in the process of (a) is reduced to be less than the exhaust amounts of the ambient gas in the processes of (b) and / or (c). The "reduction" mentioned here also includes not discharging the ambient gas (that is, setting the exhaust amount to "0").

[0202] According to the ambient gas control of this processing method, the state where the pressure in the vacuum transfer chamber 103 is higher than the pressure in the processing chamber 202 can be reliably maintained, which is very useful in suppressing the intrusion of foreign matter into the vacuum transfer chamber 103.

[0203] (Sixth aspect)

[0204] Based on the above first aspect, focusing on the pressure difference (pressure differential) between the pressure in the vacuum transfer chamber 103 and the pressure in the processing chamber 202, the control process of the method described below is performed.

[0205] Specifically, as the ambient gas control of the sixth aspect, a technique is provided.

[0206] When the pressure differential between the pressure in the vacuum transfer chamber 103 and the pressure in the processing chamber 202 exceeds the first threshold value, the first ambient gas regulating unit 170 increases the pressure in the vacuum transfer chamber 103.

[0207] The first threshold is preset to a value slightly smaller than the pressure difference between the vacuum transfer chamber 103 and the processing chamber 202 to such an extent that the ambient gas in the processing chamber 202 does not enter the vacuum transfer chamber 103. Moreover, the first threshold is preset to a value slightly smaller than the limit value described later.

[0208] For example, when the pressure in the processing chamber 202 is higher than the pressure in the vacuum transfer chamber 103 by a pressure difference corresponding to the first threshold, it is possible that the ambient gas in the processing chamber 202 does not move into the vacuum transfer chamber 103 due to differences in the gate valve 205, the surrounding sealing structure, etc. However, for example, when the pressure in the processing chamber 202 is significantly higher than the pressure in the vacuum transfer chamber 103, if the pressure difference between the two exceeds the first threshold to a certain extent, it may exceed the limit value of the hardware structure such as the gate valve 205, resulting in the ambient gas in the processing chamber 202 flowing into the vacuum transfer chamber 103.

[0209] To avoid this situation, in the environmental gas control of the sixth aspect, the first threshold is preset. Then, when the pressure difference between the processing chamber 202 and the vacuum transfer chamber 103 exceeds the first threshold, the pressure in the vacuum transfer chamber 103 is increased to make this pressure difference smaller.

[0210] According to the environmental gas control of this processing method, when, based on the preset first threshold, the ambient gas in the processing chamber 202 may flow into the vacuum transfer chamber 103, the pressure difference is reduced by increasing the pressure in the vacuum transfer chamber 103, and this risk can be eliminated beforehand. Therefore, it is very useful in suppressing the intrusion of foreign matter into the vacuum transfer chamber 103.

[0211] In addition, regarding the first threshold, it can be set as long as it is set based on considering the gate valve 205, the surrounding hardware structure, process conditions, component usage conditions, etc., as long as it can prevent the ambient gas in the processing chamber 202 from flowing into the vacuum transfer chamber 103 beforehand, and there is no limitation to a specific value. This is because, considering differences in the gate valve 205, the surrounding hardware structure, process conditions, component usage conditions, etc., the conditions related to the pressure difference between the processing chamber 202 and the vacuum transfer chamber 103 will change.

[0212] (Seventh aspect)

[0213] The seventh aspect further specifically stipulates the environmental gas control of the above sixth aspect.

[0214] That is, the environmental gas control of the seventh aspect provides a technology

[0215] When the pressure difference between the pressure in the vacuum transfer chamber 103 and the pressure in the processing chamber 202 exceeds the first threshold value, the first gas supply unit 170a supplies an inert gas into the vacuum transfer chamber 103.

[0216] At this time, the supply amount of the inert gas is such that the exhaust amount of the ambient gas in the vacuum transfer chamber 103 < the supply amount of the inert gas to the vacuum transfer chamber 103.

[0217] According to the ambient gas control of this processing method, by supplying an inert gas into the vacuum transfer chamber 103, the pressure in the vacuum transfer chamber 103 can be increased. Therefore, the risk of the ambient gas in the processing chamber 202 flowing into the vacuum transfer chamber 103 can be eliminated, which is very useful in suppressing the intrusion of foreign substances into the vacuum transfer chamber 103.

[0218] (Eighth aspect)

[0219] The eighth aspect further specifically defines the ambient gas control of the sixth aspect in the same manner as the above seventh aspect.

[0220] That is, the ambient gas control of the eighth aspect provides a technology

[0221] When the pressure difference between the pressure in the vacuum transfer chamber 103 and the pressure in the processing chamber 202 exceeds the first threshold value, the first exhaust unit 170b stops exhausting the ambient gas in the vacuum transfer chamber 103 or reduces the exhaust amount.

[0222] According to the ambient gas control of this processing method, by stopping the exhaust of the ambient gas in the vacuum transfer chamber 103 or reducing the exhaust amount, the pressure in the vacuum transfer chamber 103 can be increased. Therefore, the risk of the ambient gas in the processing chamber 202 flowing into the vacuum transfer chamber 103 can be eliminated, which is very useful in suppressing the intrusion of foreign substances into the vacuum transfer chamber 103.

[0223] (Ninth aspect)

[0224] In the ninth aspect, similar to the above seventh aspect, the ambient gas control of the sixth aspect is further specifically defined.

[0225] That is, the ambient gas control of the ninth aspect provides a technology

[0226] If the pressure difference between the pressure in the vacuum transfer chamber 103 and the pressure in the processing chamber 202 exceeds the first threshold value, an inert gas is supplied into the vacuum transfer chamber 103, and after the above pressure difference becomes lower than the first threshold value, the supply of the inert gas is stopped.

[0227] According to the environmental gas control of this processing method, the risk of environmental gas flowing into the vacuum transfer chamber 103 is eliminated based on the first threshold, and when this risk is eliminated, by stopping the supply of the inert gas, the supply amount of the inert gas to the vacuum transfer chamber 103 can be more reliably reduced.

[0228] (Tenth aspect)

[0229] The tenth aspect specifically stipulates the identification control of the pressure difference described in the above sixth aspect.

[0230] As described above, the CPU 401 in the controller 281 as the control unit (control unit) functions as the pressure calculation unit 401a by executing the control program read from the storage unit 403. That is, as a function of the control unit, there is a pressure calculation unit 401a capable of calculating the pressure difference between the processing chamber 202 and the vacuum transfer chamber 103.

[0231] The pressure measurement result of the first pressure measurement unit 179 capable of measuring the pressure in the vacuum transfer chamber 103 and the pressure measurement result of the second pressure measurement unit 226 capable of measuring the pressure in the processing chamber 202 are respectively output to the pressure calculation unit 401a. Moreover, the pressure calculation unit 401a calculates the pressure difference between the vacuum transfer chamber 103 and the processing chamber 202 based on the respective pressure measurement results. Hereinafter, the first pressure measurement unit 179 and the second pressure measurement unit 226 are also simply referred to as "pressure measurement units". Then, the pressure calculation unit 401a calculates the pressure difference between the pressure in the processing chamber 202 and the pressure in the vacuum transfer chamber 103 based on the pressure values measured by the pressure measurement unit.

[0232] According to the environmental gas control of this processing method, based on the pressure values measured by the pressure measurement unit, the pressure calculation unit 401a can calculate the pressure difference between the processing chamber 202 and the vacuum transfer chamber 103 in real time. That is, it is possible to monitor the pressure difference between the processing chamber 202 and the vacuum transfer chamber 103.

[0233] Therefore, as described in the above sixth aspect, when controlling whether to increase the pressure in the vacuum transfer chamber 103 based on the first threshold, the pressure control can quickly respond to the change in the pressure difference (that is, for example, there is no delay when exceeding the first threshold). Moreover, more accurate control can be performed.

[0234] (Eleventh aspect)

[0235] Based on the above first aspect, the eleventh aspect synchronizes the environmental gas control for the vacuum transfer chamber 103 and the processing chamber 202 with the pressure change in the processing chamber 202.

[0236] As described above, in the processing chamber 202, when implementing the substrate processing process, the following processes are performed. That is, control is performed in such a way that the following processes are sequentially executed: after the substrate 200 is loaded into the processing chamber 202, a first pressure adjustment process S203 for adjusting the pressure in the processing chamber 202 to the substrate processing pressure; a processing process (such as a film forming process S204) for supplying a processing gas to the processing chamber 202 to process the substrate 200; and a second pressure adjustment process S205 for adjusting the pressure in the processing chamber 202 to the substrate transfer pressure after the processing process.

[0237] In this situation, as the environmental gas control in the eleventh aspect, a technique is provided to adjust the pressure in the vacuum transfer chamber 103 synchronously with at least one process in the vacuum transfer chamber 103. That is, the pressure in the processing chamber 202 is changed by each process, but the pressure adjustment in the vacuum transfer chamber 103 is performed synchronously with this pressure change.

[0238] Specifically, as the environmental gas control in the eleventh aspect, a technique is provided to perform control in such a way that after the substrate 200 is loaded into the processing chamber 202, the following processes are executed:

[0239] A first pressure adjustment process for adjusting the pressure in the processing chamber 202 to the substrate processing pressure;

[0240] A substrate processing process for supplying a processing gas to the processing chamber 202 to process the substrate 200;

[0241] After the substrate processing process, a second pressure adjustment process for adjusting the pressure in the processing chamber 202 to the substrate transfer pressure,

[0242] In the vacuum transfer chamber 103, the pressure in the vacuum transfer chamber 103 is adjusted synchronously with at least one process.

[0243] According to the environmental gas control of this processing method, by synchronizing the pressure adjustment in the vacuum transfer chamber 103 with the pressure change in the processing chamber 202, it is possible to reliably maintain the state where the pressure in the vacuum transfer chamber 103 is higher than the pressure in the processing chamber 202. Therefore, it is very useful in terms of suppressing the intrusion of foreign substances into the vacuum transfer chamber 103.

[0244] (Twelfth aspect)

[0245] The twelfth aspect further specifically specifies the processes described in the above eleventh aspect.

[0246] For example, in the case where the processing step for processing the substrate 200 is the film formation step S204, in this film formation step S204, the first gas supply step of supplying a first gas as a source gas containing a first element to the substrate 200 and the second gas supply step of supplying a reaction gas as a gas containing a second element to the substrate 200 are repeatedly performed a specified number of times. The first gas supply step may be set as the source gas supply step, and the second gas supply step may be set as the reaction gas supply step. The specified number of times is one or more. A third gas (for example, an inert gas) supply step may also be performed between the first gas supply step and the second gas supply step.

[0247] In this situation, pressure fluctuations in the processing chamber 202 also occur during the first gas supply step and the second gas supply step.

[0248] Therefore, in the ambient gas control of the twelfth aspect, on the basis of the respective steps described in the eleventh aspect above, it further includes the respective steps of the first gas supply step and the second gas supply step, and the pressure of the vacuum transfer chamber 103 is adjusted synchronously with at least one of these steps.

[0249] Specifically, the ambient gas control of the twelfth aspect provides a technique in which the substrate processing step is controlled to repeatedly perform the following steps a specified number of times:

[0250] The first gas supply step of supplying a source gas to the substrate 200; and

[0251] The second gas supply step of supplying a reaction gas to the substrate 200,

[0252] In the vacuum transfer chamber 103, the pressure of the vacuum transfer chamber 103 is adjusted synchronously with at least one step.

[0253] According to the ambient gas control of this processing method, the pressure adjustment of the vacuum transfer chamber 103 can be made to be more precisely synchronized with the pressure fluctuations in the processing chamber 202. Therefore, the state where the pressure in the vacuum transfer chamber 103 is higher than the pressure in the processing chamber 202 can be reliably maintained, which is very useful in suppressing the intrusion of foreign substances into the vacuum transfer chamber 103.

[0254] (The thirteenth aspect)

[0255] The thirteenth aspect further specifically specifies the pressure adjustment in the respective steps described in the eleventh aspect or the twelfth aspect above.

[0256] As described in the eleventh aspect or the twelfth aspect, the pressure in the processing chamber 202 also varies in each process. On this basis, using the environmental gas control of the eleventh aspect or the twelfth aspect, the pressure of the vacuum transfer chamber 103 is adjusted synchronously with at least one of the processes.

[0257] However, it is considered that there may be a situation where the pressure control for adjusting the pressure of the vacuum transfer chamber 103 cannot keep up with the pressure changes in each process in the processing chamber 202.

[0258] For example, in the environmental gas control of the eleventh aspect, when moving from the film formation process S204 as a processing process to the second pressure adjustment process S205, the pressure in the processing chamber 202 may return to the substrate transfer pressure in the second pressure adjustment process S205 within T seconds. In contrast, the space volume of the vacuum transfer chamber 103 is larger than that of the processing chamber 202, so a pressure adjustment time of T seconds + several seconds is required. If the pressure in the processing chamber 202 becomes higher than the pressure in the vacuum transfer chamber 103 during these several seconds, the environmental gas in the processing chamber 202 may flow into the vacuum transfer chamber 103.

[0259] In addition, for example, in the environmental gas control of the twelfth aspect, a process of alternately supplying process gases is envisioned, but the switching between the first gas supply and the second gas supply is very fast, so there is a possibility that the pressure adjustment of the vacuum transfer chamber 103 cannot follow. If the pressure in the processing chamber 202 becomes higher than the pressure in the vacuum transfer chamber 103 during the period when it cannot follow, the environmental gas in the processing chamber 202 may flow into the vacuum transfer chamber 103.

[0260] Therefore, in the environmental gas control of the thirteenth aspect, in order to be able to follow the pressure changes in the processing chamber 202, the pressure changes are anticipated, and the pressure adjustment of the vacuum transfer chamber 103 is performed so as to become a pressure value set relatively high.

[0261] In other words, the environmental gas control of the thirteenth aspect provides a technique

[0262] The pressure of the vacuum transfer chamber 103 is adjusted to become the following pressure value:

[0263] A pressure value that is set to maintain a pressure higher than the pressure in the processing chamber 202 even in the presence of pressure changes in each process in the processing chamber 202,

[0264] More specifically, it is set to a pressure value that is higher than the higher pressure among the pressures before and after the change in the processing chamber 202 by a specified value.

[0265] Specifically, for example, consider a case where the pressure PP1 in the processing chamber 202 during the first pressure adjustment step S203 is 200 Pa, and the pressure PP2 in the processing chamber 202 during the subsequent film formation step S204 is 100 Pa. In this case, regarding the pressure TP2 in the vacuum transfer chamber 103 during the film formation step S204, the pressure TP2 is increased so as to become a pressure value of 230 Pa, which is set to be 30 Pa higher than the higher pressure of 200 Pa among the pressures PP1 and PP2 before and after the change in the processing chamber 202.

[0266] Further, for example, consider a case where the pressure PP2 in the processing chamber 202 during the film formation step S204 is 100 Pa, and the pressure PP3 in the processing chamber 202 during the subsequent second pressure adjustment step S205 is 300 Pa. In this case, regarding the pressure TP3 in the vacuum transfer chamber 103 during the second pressure adjustment step S205, the pressure TP3 is increased in advance so as to become a pressure value of 330 Pa, which is set to be 30 Pa higher than the higher pressure of 300 Pa among the pressures PP2 and PP3 before and after the change in the processing chamber 202.

[0267] According to the environmental gas control of this processing method, by setting the pressure in the vacuum transfer chamber 103 to be higher than the higher pressure among the pressures before and after the change in the processing chamber 202, it is possible to quickly follow the pressure change in the processing chamber 202 and adjust the pressure in the vacuum transfer chamber 103. Therefore, when adjusting the pressure in the vacuum transfer chamber 103 in synchronization with at least one of the steps, it is possible to prevent the situation where the pressure adjustment in the vacuum transfer chamber 103 fails to keep up with the pressure change in each step in the processing chamber 202. Thus, even if there is a pressure change in the processing chamber 202, the pressure in the vacuum transfer chamber 103 can be maintained at a pressure higher than the pressure in the processing chamber 202, which is very useful in suppressing the intrusion of foreign substances into the vacuum transfer chamber 103.

[0268] (The fourteenth aspect)

[0269] Based on the above first aspect, the fourteenth aspect also performs environmental gas control on the load lock vacuum chambers 122 and 123.

[0270] As described above, the load lock vacuum chambers 122 and 123 that can communicate with the vacuum transfer chamber 103 are connected to the vacuum transfer chamber 103. If we focus on the load lock vacuum chambers 122 and 123, between the vacuum transfer chamber 103 and the load lock vacuum chambers 122 and 123, when transferring the substrate 200, the following steps (d) and (e) are performed.

[0271] (d) A step of decompressing the load lock vacuum chambers 122 and 123;

[0272] (e) A transfer process of moving the substrate 200 between the load lock vacuum chambers 122 and 123 and the vacuum transfer chamber 103.

[0273] In the case of each process of (d) and (e), the environmental gas control of the fourteenth aspect provides a technique for performing the following control process.

[0274] Specifically, the environmental gas control of the fourteenth aspect provides a technique having load lock vacuum chambers 122 and 123 that can communicate with the vacuum transfer chamber 103.

[0275] In a state where the pressure in the load lock vacuum chambers 122 and 123 is higher than the pressure in the vacuum transfer chamber 103, the controller 281 can perform control so that the supply amount of the inert gas supplied to the vacuum transfer chamber 103 satisfies (e) > (d).

[0276] That is, the first environmental gas adjustment unit 170 that adjusts the environmental gas in the vacuum transfer chamber 103 and the third environmental gas adjustment unit 180 that adjusts the environmental gas in the load lock vacuum chambers 122 and 123 are controlled to be in this relational manner, respectively.

[0277] Through the environmental gas control in this processing method, similar to the relationship between the vacuum transfer chamber 103 and the processing chamber 202, the environmental gas in the vacuum transfer chamber 103 can be prevented from invading the load lock vacuum chambers 122 and 123. That is, when the vacuum transfer chamber 103 is also adjacent to the load lock vacuum chambers 122 and 123, by preventing the environmental gas in the vacuum transfer chamber 103 from invading the load lock vacuum chambers 122 and 123, it is very useful for suppressing the intrusion of foreign substances into the vacuum transfer chamber 103 and the load lock vacuum chambers 122 and 123. Moreover, it is also possible to reduce the supply amount of the inert gas supplied to the vacuum transfer chamber 103.

[0278] (The fifteenth aspect)

[0279] The fifteenth aspect further specifically defines the environmental gas control of the fourteenth aspect.

[0280] In the process of (d) above, the load lock vacuum chambers 122 and 123 are in a decompressed state. On this basis, the environmental gas control of the fifteenth aspect provides a technique.

[0281] When the load lock vacuum chambers 122 and 123 are in a decompressed state, in the vacuum transfer chamber 103, the pressure is controlled to be lower than the pressure in the load lock vacuum chambers 122 and 123.

[0282] By controlling the ambient gas in this manner, even when the load lock vacuum chambers 122 and 123 are in a reduced pressure state, the ambient gas in the vacuum transfer chamber 103 can be prevented from invading the load lock vacuum chambers 122 and 123. Therefore, it is very useful for suppressing the intrusion of foreign matter into the load lock vacuum chambers 122 and 123.

[0283] (Sixteenth aspect)

[0284] The sixteenth aspect further specifically defines the ambient gas control of the fourteenth aspect described above.

[0285] As the ambient gas control of the sixteenth aspect, a technique is provided

[0286] When the load lock vacuum chambers 122 and 123 are in a reduced pressure state, the pressure in the vacuum transfer chamber 103 is controlled to be higher than the pressure in the processing chamber 202 and lower than the pressure in the load lock vacuum chambers 122 and 123.

[0287] By controlling the ambient gas in this manner, ambient gas is not allowed to invade between the processing chamber 202 and the vacuum transfer chamber 103, and between the vacuum transfer chamber 103 and the load lock vacuum chambers 122 and 123, and foreign matter intrusion can be suppressed.

[0288] (Seventeenth aspect)

[0289] Based on the first aspect described above, the seventeenth aspect defines the ambient gas control when the substrate 200 is taken out from the processing chamber 202.

[0290] Specifically, the ambient gas control of the seventeenth aspect provides a technique

[0291] When the substrate 200 is moved from the vacuum transfer chamber 103 to the processing chamber 202, the pressure in the vacuum transfer chamber 103 is set to be equal to or higher than the pressure in the processing chamber 202.

[0292] Thereafter, the vacuum transfer chamber 103 is communicated with the processing chamber 202 to make the pressure in the vacuum transfer chamber 103 higher than the pressure in the processing chamber 200.

[0293] Regarding the pressure in the vacuum transfer chamber 103 and the pressure in the processing chamber 202, by substantially maintaining the relationship that the pressure in the vacuum transfer chamber 103 > the pressure in the processing chamber 202, environmental gas in the processing chamber 202 is prevented from invading the vacuum transfer chamber 103. However, if the pressure difference between the vacuum transfer chamber 103 and the processing chamber 202 is large, there is a concern that most of the environmental gas in the vacuum transfer chamber 103 will flow into the processing chamber 202 at the moment when the gate valve 205 between the vacuum transfer chamber 103 and the processing chamber 202 is opened. This will result in an unexpected movement of environmental gas. Therefore, for example, it may cause the environmental gas in the processing chamber 202 to be dispersed, and thus it may take time to adjust the pressure for subsequent substrate processing. In addition, when adjusting the pressure, an inert gas is considered, so there is also a possibility of consuming more inert gas.

[0294] In contrast, according to the environmental gas control of the seventeenth aspect, by coordinating the timing of connecting the vacuum transfer chamber 103 and the processing chamber 202 for environmental gas control, it is possible to suppress the situation where the pressure difference is too large when the substrate 200 is carried out from the processing chamber 202. Therefore, it is possible to suppress the unexpected movement of environmental gas and eliminate the situation that causes the above possibilities.

[0295] (The eighteenth aspect)

[0296] Based on the above first aspect, the eighteenth aspect specifically defines the operation of the gate valve 205.

[0297] That is, the operation control of the eighteenth aspect provides a technology

[0298] having a substrate loading / unloading port 206 that connects the vacuum transfer chamber 103 and the processing chamber 202, and a gate valve 205 that can open and close the substrate loading / unloading port 206. In the process of (a) above, the gate valve 205 is set to the open state.

[0299] In the process of (b) or (c) above, the gate valve 205 is set to the closed state.

[0300] According to the operation control of this processing method, in the process of (b) or (c), since the environmental gas is adjusted with the gate valve 205 closed, it is possible to prevent the environmental gas in the processing chamber 202 from flowing into the vacuum transfer chamber 103 and reduce the gas supply amount supplied to the vacuum transfer chamber 103. For example, even if the supply amount of the inert gas is reduced with the gate valve 205 open, as a result, the pressures in the vacuum transfer chamber 103 and the processing chamber 202 will become the same. Although there is a concern that the environmental gas in the processing chamber 202 will flow into the vacuum transfer chamber 103, according to the operation control of the eighteenth aspect, this risk can be eliminated.

[0301] In addition, when the pressure in the processing chamber 202 > the pressure in the vacuum transfer chamber 103, there is a concern that the ambient gas in the processing chamber 202 may flow into the vacuum transfer chamber 103 even if the gate valve 205 is closed. Therefore, even when performing the operation control of the eighteenth aspect, the relationship of the pressure in the processing chamber 202 < the pressure in the vacuum transfer chamber 103 is maintained.

[0302] (Nineteenth aspect)

[0303] The nineteenth aspect further specifically defines the "standby process" described in the first aspect above.

[0304] That is, the ambient gas control of the nineteenth aspect provides a technology.

[0305] In the standby process, the process in the processing chamber 202 is set to a stopped state.

[0306] The standby process refers to an idle state, for example. Sometimes, an inert gas is supplied to the vacuum transfer chamber 103 and the processing chamber 202 (but in a state without the substrate 200) in the idle state.

[0307] In such a standby process, by applying the ambient gas control of the first aspect, it is also possible to prevent the ambient gas in the processing chamber 202 from flowing into the vacuum transfer chamber 103 and reduce the gas supply amount supplied to the vacuum transfer chamber 103.

[0308] (Twentieth aspect)

[0309] The twentieth aspect further specifically defines the ambient gas control described in the first aspect above.

[0310] That is, the ambient gas control of the twentieth aspect provides a technology.

[0311] The pressure in the vacuum transfer chamber 103 is adjusted by the first ambient gas adjustment unit 170, and the pressure in the processing chamber 202 is adjusted by the second ambient gas adjustment unit.

[0312] According to the ambient gas control of this processing method, the first ambient gas adjustment unit 170 is responsible for adjusting the pressure of the vacuum transfer chamber 103, and the second ambient gas adjustment unit is responsible for adjusting the pressure of the processing chamber 202. In this case, the pressure adjustment based on the first ambient gas adjustment unit 170 is jointly performed by the first gas supply unit 170a and the first exhaust unit 170b, but is not limited thereto. For example, it can also be performed by only operating the first gas supply unit 170a or the first exhaust unit 170. Similarly, in the second ambient gas adjustment unit, for example, it can be jointly performed by the second gas supply unit 230 and the second exhaust unit 220, or can also be performed by only operating the second gas supply unit 230 or the second exhaust unit 220.

[0313] (Twenty - first aspect)

[0314] The twenty - first aspect adopts other configurations for the second container described in the first aspect above.

[0315] In the twenty - first aspect, as Figure 9 shown, the processing container 203 as the second container has a configuration including an upper container 2031 having a processing chamber 202, and a lower container 2032 including a transfer chamber 330 communicating with the processing chamber 202 and adjacent to the upper container 2031.

[0316] In this case, in the transfer chamber 330, a seventh gas supply unit 310 configured to be able to supply gas to the transfer chamber 330 and a fourth exhaust unit 320 configured to be able to exhaust ambient gas from the transfer chamber 330 are provided. In this aspect, the seventh gas supply unit 310 and the fourth exhaust unit 320 can be collectively regarded as the second ambient gas regulating unit. The pressure in the transfer chamber 330 is regulated by the second ambient gas regulating unit.

[0317] In this aspect, the substrate support portion 210 can be configured to be able to support a plurality of substrates 200 and process the plurality of substrates 200 together in the processing chamber 202. The substrate support portion 210 in this aspect is configured to have a lifting portion and be able to transfer (lift) a plurality of substrates 200 between the processing chamber 202 and the transfer chamber 330.

[0318] In this aspect, the substrate 200 moved to the processing chamber 202 is processed by the processing gas supplied from the second gas supply unit 230.

[0319] According to this processing method, even when moving the substrate between the first container and the second container, specifically between the vacuum transfer chamber 103 and the transfer chamber 330 in the processing container 203, by applying the above - mentioned ambient gas control, it is possible to prevent the inflow of the ambient gas in the transfer chamber 330 into the vacuum transfer chamber 103, and reduce the gas supply amount supplied to the vacuum transfer chamber 103.

[0320] (6) Another embodiment

[0321] The above has specifically described one embodiment of the present disclosure, but the present technology is not limited to the above - mentioned one embodiment and can be changed within the scope not departing from the gist thereof.

[0322] For example, in the above - mentioned one embodiment, an example of supplying two gases is used, but it is not limited thereto, and one gas or three or more gases can also be supplied to form a film.

[0323] In addition, in the above-described embodiment, an example in which each of the processing containers 203a to 203d has one processing chamber has been described, but the present invention is not limited thereto. For example, a configuration in which the processing container 203 as the second container includes a plurality of processing chambers or processing spaces may also be included.

[0324] The above aspects or modification examples can be used in appropriate combination. The processing steps and processing conditions at this time can be the same as those of the above aspects or modification examples, for example.

[0325] The technology of the present disclosure can also be appropriately applied to a case where a film is formed in a batch-type substrate processing apparatus that uses a plurality of processing substrates at a time, and a case where a film is formed in a single-sheet type substrate processing apparatus that uses one or several processing substrates at a time. It can also be appropriately applied to a case where a film is formed using a substrate processing apparatus in a processing furnace having a hot wall type, and a case where a film is formed using a substrate processing apparatus having a cold wall type processing furnace. When using these substrate processing apparatuses, each process is also performed using the same processing steps and processing conditions as those of the above aspects or modification examples, and the same effects as those of the above aspects or modification examples are obtained.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: A first container including a transfer chamber; A second container communicating with the transfer chamber and including a processing chamber for processing a substrate; A first ambient gas regulating unit capable of regulating the ambient gas in the first container; A second ambient gas regulating unit capable of regulating the ambient gas in the second container; and A control unit capable of controlling in a state where the pressure in the first container is higher than the pressure in the second container such that the supply amount of the inert gas supplied to the first container becomes either or both of (a) > (b) and (a) > (c), where (a) is a transfer process of moving the substrate between the first container and the second container, (b) is a processing process of processing the substrate using the second container, (c) is a standby process of not processing the substrate using the second container.

2. The substrate processing apparatus according to claim 1, characterized in that The first ambient gas regulating unit has a first gas supply unit capable of supplying an inert gas into the first container and a first exhaust unit capable of exhausting the ambient gas in the first container, The second ambient gas regulating unit has a second gas supply unit capable of supplying a processing gas to the second container and a second exhaust unit capable of regulating the ambient gas in the second container, In the case of (b) or (c), the first gas supply unit stops supplying the inert gas to the first container, and / or the first gas exhaust unit stops exhausting the ambient gas in the first container.

3. The substrate processing apparatus according to claim 1, characterized in that In the case of (b) or (c), the first ambient gas regulating unit stops supplying the inert gas to the first container and stops exhausting the ambient gas in the first container with a predetermined time difference.

4. The substrate processing apparatus according to claim 3, characterized in that The predetermined time difference is a time capable of maintaining the state where the pressure in the first container is higher than the pressure in the second container.

5. The substrate processing apparatus according to claim 1, characterized in that The amount of the ambient gas discharged from the first container is either or both of (a) < (b) and (a) < (c).

6. The substrate processing apparatus according to claim 1, characterized in that When the pressure difference between the pressure in the first container and the pressure in the second container exceeds a first threshold, the first ambient gas regulating unit increases the pressure in the first container.

7. The substrate processing apparatus according to claim 6, characterized in that When the pressure difference between the pressure in the first container and the pressure in the second container exceeds the first threshold, the first gas supply unit supplies an inert gas into the first container.

8. The substrate processing apparatus according to claim 7, characterized in that When the pressure difference between the pressure in the first container and the pressure in the second container exceeds the first threshold value, the first gas exhaust section stops exhausting the ambient gas in the first container or reduces the exhaust amount.

9. The substrate processing apparatus according to claim 6, wherein: When the pressure difference becomes lower than the first threshold value, the supply of the inert gas is stopped.

10. The substrate processing apparatus according to claim 7, wherein: It further includes a pressure calculation section that can calculate the pressure difference between the second container and the first container.

11. The substrate processing apparatus according to claim 1, wherein: Control is performed such that after a substrate is loaded into the second container, the following steps are executed: A first pressure adjustment step of adjusting the pressure in the second container to a substrate processing pressure; A substrate processing step of supplying a processing gas to the second container to process the substrate; And A second pressure adjustment step of adjusting the pressure in the second container to a substrate transfer pressure after the substrate processing step. In the first container, the pressure of the first container is adjusted synchronously with at least one of the first pressure adjustment step, the substrate processing step, and the second pressure adjustment step.

12. The substrate processing apparatus according to claim 11, wherein: The substrate processing step is controlled to repeat a first gas supply step of supplying a source gas to the substrate and a second gas supply step of supplying a reaction gas to the substrate a specified number of times. In the first container, the pressure of the first container is adjusted synchronously with at least one of the first gas supply step and the second gas supply step.

13. The substrate processing apparatus according to claim 11 or 12, wherein: The pressure of the first container is adjusted to a pressure value that is set to maintain a pressure higher than the pressure in the second container even if there are pressure fluctuations in each step in the second container.

14. The substrate processing apparatus according to claim 1, wherein: It further has a load lock vacuum chamber that can communicate with the first container. In a state where the pressure in the load lock vacuum chamber is higher than the pressure in the first container, the controller can control the supply amount of the inert gas supplied to the first container such that (e) > (d), where: (d) is a step of decompressing the load lock vacuum chamber; (e) is a transfer step of transferring the substrate between the load lock vacuum chamber and the first container.

15. The substrate processing apparatus according to claim 14, wherein: When the load lock vacuum chamber is in a decompressed state, the pressure in the first container is controlled to be a pressure higher than the pressure in the second container and lower than the pressure in the load lock vacuum chamber.

16. The substrate processing apparatus according to claim 1, wherein: When moving the substrate from the first container to the second container, the pressure in the first container is made higher than the pressure in the second container. Thereafter, the first container and the second container are put into communication with each other, and the pressure in the first container is made higher than the pressure in the second container.

17. An ambient gas control method, characterized in that: In a state where the pressure in the first container that can communicate with the second container for processing the substrate is higher than the pressure in the second container, the supply amount of the inert gas supplied to the first container is made to satisfy either or both of (a) > (b) and (a) > (c), where (a) is a transfer process of transferring the substrate between the first container and the second container, (b) is a processing process of processing the substrate using the second container, (c) is a standby process of not processing the substrate using the second container.

18. A substrate processing method, characterized in that: The ambient gas control method according to claim 17 is used.

19. A method for manufacturing a semiconductor device, characterized in that: The ambient gas control method according to claim 17 is used.

20. A computer-readable recording medium having a program recorded thereon, characterized in that, The program causes a substrate processing apparatus to execute the following processes: In a state where the pressure in the first container that can communicate with the second container for processing the substrate is higher than the pressure in the second container, the supply amount of the inert gas supplied to the first container is made to satisfy either or both of (a) > (b) and (a) > (c), where (a) is a transfer process of transferring the substrate between the first container and the second container, (b) is a processing process of processing the substrate using the second container, and (c) is a standby process of not processing the substrate using the second container.

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