Light-emitting diode and light-emitting diode preparation method
By using multiple clockwise and multiple counterclockwise rotations when depositioning the electrode structure, the electrode structure is ensured to be trapezoidal cross-section, which solves the problem of easy cracks in the electrode structure and improves the stability and reliability of the light emitting diode.
Patent Information
- Application Number
- CN202510437343.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-09
- Publication Date
- 2025-07-18
AI Technical Summary
In the prior art, the electrode structure of the light emitting diode is prone to cracks during the evaporation process, resulting in insecure stability.
When depositioning the electrode structure, the electrode structure is made by multiple clockwise and multiple counterclockwise rotations to ensure that the electrode structure is trapezoidal at the cross section perpendicular to the surface of the epitaxial structure, and the difference between the two bottom angles of the trapezoidal shape is smaller than the set value, so as to avoid breaking of the metal layer.
The angle and cladding of the electrode structure are improved, the reliability of the chip is improved, the problem of metal layer fracture is avoided, and the stability of the electrode structure is enhanced.
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Figure CN120344051A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of light-emitting devices, and particularly to a light-emitting diode and a method for manufacturing the light-emitting diode. Background Art
[0002] The applications of light-emitting diodes (LEDs) have expanded from indicator lights to multiple fields such as display screens, signal lights, lighting, and medical devices.
[0003] Related technologies provide a light-emitting diode, including: an epitaxial structure and an electrode structure, and the electrode structure is located on the surface of the epitaxial structure.
[0004] Currently, the electrode structure is usually prepared by evaporation, but the electrode structure obtained by evaporation at present has the problem that cracks are likely to appear, and the electrode structure is not stable enough. Summary of the Invention
[0005] Embodiments of the present disclosure provide a light-emitting diode and a method for manufacturing the light-emitting diode, which can solve the problem that cracks are likely to appear in the electrode structure. The technical solution is as follows:
[0006] On the one hand, a method for manufacturing a light-emitting diode is provided, and the method includes:
[0007] Fabricating an epitaxial structure;
[0008] Fabricating a patterned mask on the epitaxial structure by using a photoresist, and the patterned mask has an opening for the electrode structure;
[0009] Evaporating the electrode structure within the opening for the electrode structure, and during the evaporation of the electrode structure, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times;
[0010] Removing the patterned mask.
[0011] Optionally, the electrode structure includes a plurality of stacked sub-layers;
[0012] Each of the sub-layers is fabricated in the following manner:
[0013] Evaporating the sub-layer within the opening for the electrode structure, and during the evaporation process, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times.
[0014] Optionally, the electrode structure includes a stacked Ti sub-layer and Al sub-layer;
[0015] Evaporating the electrode structure within the opening for the electrode structure includes:
[0016] Deposit the Ti sub-layer within the opening of the electrode structure. During the deposition process, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times.
[0017] Deposit the Al sub-layer within the opening of the electrode structure. During the deposition process, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times.
[0018] Optionally, during the deposition process, the number of clockwise rotations and the number of counterclockwise rotations of the machine platform carrying the epitaxial structure are equal.
[0019] Optionally, during the deposition process, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times, including:
[0020] During the deposition process, the machine platform carrying the epitaxial structure rotates 500 - 1500 times clockwise and 500 - 1500 times counterclockwise.
[0021] Optionally, the thickness of the Ti sub-layer is 1500 - 2500 angstroms, and the thickness of the Al sub-layer is 4500 - 5500 angstroms.
[0022] Optionally, the cross-section of the electrode structure in the direction perpendicular to the surface of the epitaxial structure is trapezoidal, and the difference in the degrees of the two base angles of the trapezoid is less than a set value.
[0023] On the other hand, a light-emitting diode is provided, which includes an epitaxial structure and an electrode structure;
[0024] The epitaxial structure has a stepped structure, the electrode structure is located on the surface of the epitaxial structure, the cross-section of the electrode structure in the direction perpendicular to the surface of the epitaxial structure is trapezoidal, and the difference in the degrees of the two base angles of the trapezoid is less than a set value.
[0025] Optionally, the electrode structure includes a stacked Ti sub-layer and Al sub-layer.
[0026] Optionally, the thickness of the Ti sub-layer is 1500 - 2500 angstroms, and the thickness of the Al sub-layer is 4500 - 5500 angstroms.
[0027] The beneficial effects brought by the technical solutions provided in the embodiments of the present disclosure are:
[0028] In the embodiments of the present disclosure, when vapor-depositing the electrode structure, the crucible carrying the epitaxial structure is rotated clockwise and counterclockwise multiple times. Compared with the single-direction multiple rotations in the related art, the situation where the inclination angles on both sides of the electrode structure formed by the vapor-deposition process in the related art are different is improved, the angle and coating difference of the electrode structure are improved, the situation of metal fracture is avoided, and the chip reliability is improved. Through experimental verification, this solution can effectively improve the angles on both sides of the electrode structure and solve the problem of metal layer fracture of the electrode structure. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] To more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present disclosure. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.
[0030] Figure 1 is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure;
[0031] Figure 2 is a flowchart of another method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure;
[0032] Figure 3 is a schematic diagram of an electrode structure formed by using a photoresist to fabricate a patterned mask provided by an embodiment of the present disclosure;
[0033] Figure 4 is a schematic diagram of the structure of a light-emitting diode provided by an embodiment of the present disclosure.
[0034] The reference numerals are as follows:
[0035] 10: epitaxial structure; 20: electrode structure;
[0036] 101: substrate; 102: first semiconductor layer; 103: active layer; 104: second semiconductor layer; 105: current blocking layer; 106: current spreading layer; 201: first electrode; 202: second electrode; 116: isolation groove; 117: step structure. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0037] To make the objectives, technical solutions, and advantages of the present disclosure clearer, the following will further describe the embodiments of the present disclosure in detail with reference to the drawings.
[0038] Figure 1 is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 1 , the steps of the method include:
[0039] S11. Fabricate the epitaxial structure 10.
[0040] In an embodiment of the present disclosure, the epitaxial structure may include an epitaxial layer, a current blocking layer, and a current spreading layer stacked in sequence.
[0041] Among them, the epitaxial layer may include a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The current blocking layer may be a silicon dioxide or aluminum oxide layer. The current spreading layer may be an indium tin oxide layer.
[0042] In one example, the first semiconductor layer may be an N-type GaN layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be a P-type GaN layer.
[0043] In another example, the first semiconductor layer may be an N-type AlGaInP layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be a P-type GaP layer.
[0044] Exemplarily, a Metal Organic Chemical Vapor Deposition (MOCVD) device is used to fabricate the above epitaxial structure.
[0045] It should be noted that the above introduction of the epitaxial structure is only an example. The epitaxial structure may include more film layers or be composed of other film layers, and the embodiments of the present disclosure do not limit this.
[0046] S12. Use a photoresist to fabricate a patterned mask on the epitaxial structure 10, and the patterned mask has an electrode structure opening.
[0047] In an embodiment of the present disclosure, step S12 may include:
[0048] Coat a layer of negative photoresist on the surface of the epitaxial structure; develop and expose the negative photoresist to form a patterned mask with an electrode structure opening.
[0049] Since after developing the negative photoresist, the exposed part will be retained and the unexposed part will be dissolved, and since the exposure area gradually increases to form an inverted trapezoid from the direction close to the light source to the far direction during exposure, the unexposed area is a positive trapezoid. Therefore, the electrode structure opening formed by dissolving the unexposed part is a positive trapezoid.
[0050] Optionally, before developing and exposing the photoresist, a baking and shaping step may also be included.
[0051] Optionally, before step S13, the method may further include: performing plasma treatment and flushing on the patterned mask to complete the pre-evaporation cleaning work.
[0052] Optionally, before step S12, an insulating layer covering the epitaxial structure can also be fabricated. The insulating layer has electrode vias. At this time, the patterned mask is indirectly fabricated on the epitaxial structure, directly located on the insulating layer, and the opening of the electrode structure corresponds to the electrode via.
[0053] S13. Evaporate the electrode structure 20 within the opening of the electrode structure.
[0054] Wherein, during the evaporation of the electrode structure, the stage carrying the epitaxial structure rotates clockwise and counterclockwise multiple times.
[0055] Since the opening of the electrode structure is a positive trapezoid, the formed electrode structure is a positive trapezoid. Moreover, by using the solution provided in the embodiment of the present disclosure for evaporating the electrode structure, it can be ensured that in the cross-section of the electrode structure in the direction perpendicular to the surface of the epitaxial structure, the difference in the degrees of the two bottom angles of the trapezoid is less than a set value.
[0056] Wherein, the electrode structure being a positive trapezoid means that the cross-section of the electrode structure in the direction perpendicular to the surface of the epitaxial structure (i.e., perpendicular to the substrate direction) is a positive trapezoid structure.
[0057] Wherein, evaporating the electrode structure means evaporating the electrode structure by electron beam evaporation.
[0058] The stage carrying the epitaxial structure refers to an electron beam evaporation stage. In the related art, if the stage rotates unidirectionally, it will cause a large difference in the inclination angles on both sides of the electrode evaporated within the opening of the electrode structure. Therefore, it is necessary to improve by using the solution provided in the embodiment of the present disclosure.
[0059] Wherein, the rotation of the electron beam evaporation stage actually refers to the rotation of the jig in the electron beam evaporation stage. The purpose of the jig rotation is to ensure the uniformity of the electrode evaporated within the opening of the electrode structure.
[0060] S14. Remove the patterned mask.
[0061] Remove the patterned mask by using a degluing solution.
[0062] In the embodiment of the present disclosure, when evaporating the electrode structure, the crucible carrying the epitaxial structure rotates clockwise and counterclockwise multiple times. Compared with the unidirectional multiple rotations in the related art, it improves the situation where the inclination angles on both sides of the electrode structure fabricated by the evaporation process in the related art are different, improves the angle and coating difference of the electrode structure, avoids the occurrence of metal fracture, and improves the chip reliability. Through experimental verification, this solution can effectively improve the angles on both sides of the electrode structure and solve the problem of metal layer fracture of the electrode structure.
[0063] Figure 2 It is a flowchart of another light-emitting diode manufacturing method provided by the embodiment of the present disclosure. Refer toFigure 2 , the method steps include:
[0064] S21. Sequentially form a first semiconductor layer 102, an active layer 103, a second semiconductor layer 104, a current blocking layer 105, and a current spreading layer 106 on a substrate 101. The first semiconductor layer 102, the active layer 103, the second semiconductor layer 104, the current blocking layer 105, and the current spreading layer 106 constitute an epitaxial structure 10.
[0065] In one example, step S21 may include:
[0066] The first step is to fabricate a first semiconductor layer on the substrate. The first semiconductor layer is an N-type GaN layer.
[0067] Among them, the substrate can be any one of substrates such as a sapphire patterned substrate, an Si substrate, and an SiC substrate.
[0068] The second step is to fabricate an active layer on the first semiconductor layer. The active layer is a multi-quantum well layer, such as an InGaN / GaN multi-quantum well layer.
[0069] The third step is to fabricate a second semiconductor layer on the active layer to form an epitaxial layer. The second semiconductor layer is a P-type GaN layer.
[0070] The fourth step is to perform patterning on the epitaxial layer to form a step structure and isolation grooves. The step surface of the step structure is located within the epitaxial layer, and the bottom of the isolation groove is located on the substrate.
[0071] In the embodiments of the present disclosure, the first semiconductor layer, the active layer, and the second semiconductor layer are provided with a step structure extending to the first semiconductor layer, that is, the step surface is located in the first semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are also provided with isolation grooves extending to the substrate, that is, the bottom of the isolation groove is located on the substrate.
[0072] The fifth step is to fabricate a current blocking layer on the second semiconductor layer.
[0073] Among them, the current blocking layer can be a silicon dioxide or aluminum oxide layer.
[0074] The sixth step is to fabricate a current spreading layer on the current blocking layer.
[0075] Among them, the current spreading layer can be an indium tin oxide layer.
[0076] In another example, step S21 may further include:
[0077] The first step is to fabricate a first semiconductor layer on the substrate. The first semiconductor layer is an N-type AlGaInP layer.
[0078] Among them, the substrate can be a GaAs substrate.
[0079] In the second step, an active layer is fabricated on the first semiconductor layer. The active layer is a multi-quantum well layer, for example, including multiple periodically alternating stacks of AlGaInP quantum well layers and AlGaInP quantum barrier layers.
[0080] In the third step, a second semiconductor layer is fabricated on the active layer. The second semiconductor layer is a P-type GaP layer.
[0081] In the fourth step, the epitaxial layer is patterned to form a stepped structure and isolation grooves. The step surface of the stepped structure is located within the epitaxial layer, and the bottom of the isolation groove is located on the substrate.
[0082] In the embodiment of the present disclosure, the first semiconductor layer, the active layer, and the second semiconductor layer are provided with a stepped structure extending to the first semiconductor, that is, the step surface is located in the first semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are also provided with isolation grooves extending to the substrate, that is, the bottom of the isolation groove is located on the substrate.
[0083] In the fifth step, a current blocking layer is fabricated on the second semiconductor layer.
[0084] Among them, the current blocking layer can be a silicon dioxide or aluminum oxide layer.
[0085] In the sixth step, a current spreading layer is fabricated on the current blocking layer.
[0086] Among them, the current spreading layer can be an indium tin oxide layer.
[0087] In the embodiment of the present disclosure, the growth of the above-mentioned semiconductor layers can be realized by using Veeco K465i or C4 or RB MOCVD equipment or AIXTRON metal organic chemical vapor deposition equipment. High-purity H2 (hydrogen) or high-purity N2 (nitrogen) or a mixed gas of high-purity H2 and high-purity N2 is used as the carrier gas, high-purity NH3 is used as the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium sources, trimethylindium (TMIn) is used as the indium source, silane (SiH4) is used as the N-type dopant, trimethylaluminum (TMAl) is used as the aluminum source, and bis(cyclopentadienyl)magnesium (CP2Mg) is used as the P-type dopant.
[0088] S22. A patterned mask is fabricated on the epitaxial structure 10 using photoresist. The patterned mask has an opening for the electrode structure.
[0089] In the embodiment of the present disclosure, the electrode deposited by the above-mentioned scheme is actually the electrode on the current spreading layer. If there are crack problems in the electrode on the current spreading layer, it will lead to poor coverage effect in the subsequent process and cause leakage problems. Therefore, the solution of the embodiment of the present disclosure is adopted to solve the problem of electrode cracking, thereby improving leakage.
[0090] In the embodiment of the present disclosure, step S22 may include:
[0091] Coat a layer of negative photoresist on the surface of the epitaxial structure; develop and expose the negative photoresist to form a patterned mask with openings for the electrode structure.
[0092] Since the exposed part of the negative photoresist is retained after development and the unexposed part is dissolved, and since the exposure area gradually increases in the direction from near to far from the light source during exposure, forming an inverted trapezoid, the unexposed area is a positive trapezoid. Therefore, the openings for the electrode structure formed by dissolving the unexposed part are positive trapezoids.
[0093] S23. Evaporate the electrode structure 20 within the openings for the electrode structure.
[0094] During the evaporation of the electrode structure, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times. By using the solution provided in the embodiment of the present disclosure for evaporating the electrode structure, it is possible to make the difference in the degrees of the two base angles of the trapezoid less than a set value in the cross-section of the electrode structure in the direction perpendicular to the surface of the epitaxial structure.
[0095] The set value is usually determined according to the actual electrode material, size, thickness, and number of rotations. The embodiment of the present disclosure does not limit this.
[0096] In the embodiment of the present disclosure, the electrode structure includes multiple stacked sub-layers;
[0097] Each of the sub-layers is fabricated in the following manner:
[0098] Evaporate the sub-layer within the openings for the electrode structure. During the evaporation process, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times.
[0099] In this implementation, each sub-layer is fabricated by rotating in two directions, ensuring the angular uniformity of each sub-layer.
[0100] Figure 3 is a schematic diagram of the electrode structure fabricated by using a negative photoresist to form a patterned mask according to the embodiment of the present disclosure. As Figure 3 shown, the electrode structure 20 is trapezoidal, and the two side angles a and b are the same, and there is no crack in the metal layer of the electrode structure.
[0101] Among them, a and b are also the two base angles of the trapezoid, and the base angles can be the two base angles of the electrode structure in any cross-section perpendicular to the substrate.
[0102] The electrode structure being a positive trapezoid means that the cross-section of the electrode structure in the direction perpendicular to the substrate is a positive trapezoid structure.
[0103] In an embodiment of the present disclosure, the electrode structure includes a stacked Ti sub-layer and Al sub-layer, and step S23 may include:
[0104] Evaporate the Ti sub-layer within the opening of the electrode structure. During the evaporation process, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times.
[0105] Evaporate the Al sub-layer within the opening of the electrode structure. During the evaporation process, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times.
[0106] Exemplarily, during the evaporation process, the number of clockwise rotations and counterclockwise rotations of the machine platform carrying the epitaxial structure is equal.
[0107] Wherein, during the evaporation process, the machine platform carrying the epitaxial structure rotates clockwise and counterclockwise multiple times, including:
[0108] During the evaporation process, the machine platform carrying the epitaxial structure rotates 500 - 1500 times clockwise and 500 - 1500 times counterclockwise.
[0109] For example, when evaporating the Ti sub-layer, the machine platform carrying the epitaxial structure rotates 1000 times clockwise and 1000 times counterclockwise; when evaporating the Al sub-layer, the machine platform carrying the epitaxial structure rotates 1000 times clockwise and 1000 times counterclockwise.
[0110] Wherein, the thickness of the Ti sub-layer is 1500 - 2500 angstroms, and the thickness of the Al sub-layer is 4500 - 5500 angstroms.
[0111] Wherein, the cross-section of the electrode structure in the direction perpendicular to the surface of the epitaxial structure is trapezoidal, and the difference in the degrees of the two base angles of the trapezoid is less than a set value.
[0112] In an embodiment of the present disclosure, multiple clockwise rotations can be performed first, and then multiple counterclockwise rotations, or multiple counterclockwise rotations can be performed first, and then multiple clockwise rotations. This method is simple to control.
[0113] In other embodiments, one clockwise rotation and one counterclockwise rotation can also be performed per cycle, or one counterclockwise rotation and one clockwise rotation can be performed per cycle, and multiple cycles are repeated.
[0114] In one example, the electrode structure includes a first electrode and a second electrode. The first electrode is connected to the current spreading layer on the top surface of the step, and the second electrode is connected to the epitaxial layer on the bottom surface of the step.
[0115] At this time during manufacturing, a patterned mask is first formed, which has a first electrode opening and a second electrode opening respectively. Then, electrodes are formed in the first electrode opening and the second electrode opening respectively by evaporation.
[0116] It should be noted that since the first electrode and the second electrode are evaporated simultaneously, they are also rotated simultaneously during rotation. The center of rotation is usually located between the two electrodes, but it will not affect the uniformity of the tilt angles of the first electrode and the second electrode.
[0117] In another example, the electrode structure further includes a first electrode pad and a second electrode pad in addition to the first electrode and the second electrode. The first electrode is connected to the current spreading layer on the top surface of the step, the second electrode is connected to the epitaxial layer on the bottom surface of the step, the first electrode pad is connected to the first electrode, and the second electrode pad is connected to the second electrode.
[0118] At this time during manufacturing, a patterned mask is first formed, which has a first electrode opening and a second electrode opening respectively. Then, electrodes are formed in the first electrode opening and the second electrode opening respectively by evaporation. Then, an insulating layer is fabricated to coat the first electrode and the second electrode, and the insulating layer has two through holes that connect the first electrode and the second electrode. A patterned mask is formed again, which has a first electrode pad opening and a second electrode pad opening respectively. The two pad openings and the two through holes are connected. Then, electrode pads are formed in the first electrode pad opening and the second electrode pad opening respectively by evaporation.
[0119] In this embodiment, the above rotation method is adopted when manufacturing the first electrode and the second electrode, and the same rotation method is also adopted when manufacturing the first electrode pad and the second electrode pad.
[0120] Among them, the insulating layer can be a Distributed Bragg Reflector (DBR) layer or a SiO2 layer, and the DBR layer is a stack formed by SiO2 and Ti3O5.
[0121] In the embodiments of the present disclosure, the first electrode pad and the second electrode pad can be one or a combination of metals or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt, Au, and AuSn.
[0122] Exemplarily, the first electrode pad and the second electrode pad are a stack of Cr, Al, AlCu, Ti, Ni, Pt, Au, and AuSn.
[0123] S24. Remove the patterned mask.
[0124] The patterned mask is removed using a de-gumming solution.
[0125] An embodiment of the present disclosure provides a light-emitting diode, which includes: an epitaxial structure and an electrode structure.
[0126] The epitaxial structure has a stepped structure, the electrode structure is located on the surface of the epitaxial structure, and a cross-section of the electrode structure in a direction perpendicular to the surface of the epitaxial structure is trapezoidal, and a difference in degrees of two base angles of the trapezoid is less than a set value.
[0127] In an embodiment of the present disclosure, the cross-section of the electrode structure in a direction perpendicular to the surface of the epitaxial structure is trapezoidal, and a difference in degrees of two base angles of the trapezoid is less than a set value, which improves the situation where inclination angles on both sides of the electrode structure formed by an evaporation process are different in the related art, improves the angle and coating difference of the electrode structure, avoids the occurrence of metal fracture, and improves the chip reliability. Through experimental verification, this solution can effectively improve the angles on both sides of the electrode structure and solve the problem of metal layer fracture of the electrode structure.
[0128] Figure 4 is a schematic structural diagram of a light-emitting diode provided by the present disclosure, and this light-emitting diode is fabricated by the foregoing method. Refer to Figure 4 This light-emitting diode includes: a substrate 101, an epitaxial structure 10, and an electrode structure 20.
[0129] The epitaxial structure 10 is located on the substrate 101. The epitaxial structure 10 is provided with a stepped structure 117, and the stepped surface is located inside the epitaxial structure 10; the epitaxial structure 10 is further provided with an isolation groove (Isolation, ISO) 116 extending to the surface of the substrate 101; the electrode structure 20 is located on the surface of the epitaxial structure 10.
[0130] Exemplarily, the epitaxial structure 10 includes a first semiconductor layer 102, an active layer 103, a second semiconductor layer 104, a current blocking layer 105, and a current spreading layer 106.
[0131] Exemplarily, the electrode structure 20 includes a first electrode 201 and a second electrode 202.
[0132] Among them, the first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 are sequentially stacked on the substrate 101. The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 are provided with a stepped structure 117 extending to the first semiconductor 102, that is, the stepped surface is located in the first semiconductor layer 102. The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 are further provided with an isolation groove 116 extending to the surface of the substrate 101.
[0133] Among them, the current blocking layer 105 and the current spreading layer 106 are sequentially stacked on the second semiconductor layer 104.
[0134] Among them, the first electrode 201 is connected to the current spreading layer 106 on the top surface of the step, and the second electrode 202 is connected to the first semiconductor layer 102 on the bottom surface of the step.
[0135] In one example, the substrate can be any one of substrates such as a sapphire patterned substrate, an Si substrate, and an SiC substrate. The first semiconductor layer can be an N-type GaN layer, the active layer can be an InGaN / GaN multi-quantum well layer, and the second semiconductor layer can be a P-type GaN layer.
[0136] In another example, the substrate can be a GaAs substrate. The first semiconductor layer is an N-type AlGaInP layer, the active layer can include multiple periodically alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers, and the second semiconductor layer can be a P-type GaP layer.
[0137] Exemplarily, the current blocking layer 105 can be a silicon dioxide or aluminum oxide layer.
[0138] Exemplarily, the current spreading layer 106 can be an indium tin oxide layer.
[0139] Exemplarily, both the first electrode 201 and the second electrode 202 include a stacked Ti sub-layer and Al sub-layer.
[0140] Among them, the thickness of the Ti sub-layer is 1500 - 2500 angstroms, and the thickness of the Al sub-layer is 4500 - 5500 angstroms.
[0141] Exemplarily, the thickness of the Ti sub-layer is 1500 - 2500 angstroms, and the thickness of the Al sub-layer is 4500 - 5500 angstroms.
[0142] Among them, the degrees of the two bottom angles of the trapezoid are related to the actual electrode material, size, thickness, and number of rotations. The embodiments of the present disclosure do not limit this.
[0143] The above are only optional embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included within the protection scope of the present disclosure.
Claims
1. A method for preparing a light-emitting diode, characterized in that, The method includes: Fabricating an epitaxial structure (10); Fabricating a patterned mask on the epitaxial structure (10) using photoresist, the patterned mask having an opening for the electrode structure; Evaporating an electrode structure (20) within the opening for the electrode structure. During the evaporation of the electrode structure (20), the machine platform carrying the epitaxial structure (10) rotates clockwise multiple times and counterclockwise multiple times; Removing the patterned mask.
2. The method for manufacturing a light-emitting diode according to claim 1, wherein The electrode structure (20) includes multiple stacked sub-layers; Each of the sub-layers is fabricated in the following manner: Evaporating the sub-layer within the opening for the electrode structure. During the evaporation process, the machine platform carrying the epitaxial structure (10) rotates clockwise multiple times and counterclockwise multiple times.
3. The method for preparing a light-emitting diode according to claim 1 or 2, wherein The electrode structure (20) includes a stacked Ti sub-layer and Al sub-layer; Evaporating the electrode structure (20) within the opening for the electrode structure includes: Evaporating the Ti sub-layer within the opening for the electrode structure. During the evaporation process, the machine platform carrying the epitaxial structure (10) rotates clockwise multiple times and counterclockwise multiple times; Evaporating the Al sub-layer within the opening for the electrode structure. During the evaporation process, the machine platform carrying the epitaxial structure (10) rotates clockwise multiple times and counterclockwise multiple times.
4. The method for manufacturing a light-emitting diode according to claim 3, characterized in that, During the evaporation process, the number of clockwise rotations and counterclockwise rotations of the machine platform carrying the epitaxial structure (10) is equal.
5. The method for manufacturing a light-emitting diode according to claim 4, characterized in that, During the evaporation process, the machine platform carrying the epitaxial structure (10) rotates clockwise multiple times and counterclockwise multiple times, including: During the evaporation process, the machine platform carrying the epitaxial structure (10) rotates 500 - 1500 times clockwise and 500 - 1500 times counterclockwise.
6. The method for manufacturing a light-emitting diode according to claim 3, wherein The thickness of the Ti sub-layer is 1500 - 2500 angstroms, and the thickness of the Al sub-layer is 4500 - 5500 angstroms.
7. The method for preparing a light-emitting diode according to claim 1 or 2, characterized in that, The cross-section of the electrode structure (20) in the direction perpendicular to the surface of the epitaxial structure (10) is trapezoidal, and the difference in the degrees of the two base angles of the trapezoid is less than a set value.
8. A light-emitting diode, characterized in that, The light-emitting diode includes: an epitaxial structure (10) and an electrode structure (20); The epitaxial structure (10) has a stepped structure (117), the electrode structure (20) is located on the surface of the epitaxial structure (10), the cross-section of the electrode structure (20) in the direction perpendicular to the surface of the epitaxial structure (10) is trapezoidal, and the difference in the degrees of the two base angles of the trapezoid is less than a set value.
9. The light emitting diode according to claim 8, characterized in that, The electrode structure (20) includes a stacked Ti sub-layer and Al sub-layer.
10. The light-emitting diode according to claim 9, wherein, The thickness of the Ti sub-layer is 1500 - 2500 angstroms, and the thickness of the Al sub-layer is 4500 - 5500 angstroms.