Substrate processing apparatus, gas supply structure, semiconductor device manufacturing method and program

Abstract

The present invention provides a technique comprising: a processing chamber in which a substrate holder for holding a plurality of substrates is accommodated; a plurality of gas supply units arranged in a direction parallel to the surface of the substrate, extending from the outside of the processing chamber to the inside of the processing chamber, and including a first gas introduction unit for introducing a first gas, a second gas introduction unit for introducing a second gas, and a mixing unit for mixing the first gas and the second gas; and a housing unit which is disposed on a side of the processing chamber so as to extend in a direction parallel to the surface of the substrate, and which houses the plurality of gas supply units.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a gas supply structure, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As one process in the manufacturing process of a semiconductor device, for example, the following process is sometimes performed: a film is formed on the surface of a substrate accommodated in a processing container by supplying a mixed gas in which a plurality of gases are mixed (for example, Patent Document 1).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2011-187884 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] However, when supplying the mixed gas, a deviation in the temperature of the mixed gas sometimes occurs between the substrates accommodated in the processing container, and the film formation process between the substrates cannot be performed uniformly.

[0008] The present invention provides a technique capable of uniformly performing the film formation process between substrates.

[0009] Solutions to the Problems

[0010] According to one aspect of the present invention, there is provided a technique having: a processing chamber that accommodates a substrate holder for holding a plurality of substrates; a plurality of gas supply units that are arranged in a direction parallel to the surface of the substrate, extend from the outside of the processing chamber to the inside of the processing chamber, and include a first gas introduction unit for introducing a first gas, a second gas introduction unit for introducing a second gas, and a mixing unit for mixing the first gas and the second gas; and an accommodation unit that extends and is arranged in a direction parallel to the surface of the substrate on the side of the processing chamber and accommodates the plurality of gas supply units.

[0011] Advantages of the Invention

[0012] According to the present invention, the film formation process between substrates can be performed uniformly. Brief Description of the Drawings

[0013] Figure 1 It is an explanatory view showing a schematic configuration example of a substrate processing apparatus according to one aspect of the present invention.

[0014] Figure 2 It is an explanatory view showing a schematic configuration example of a substrate processing apparatus according to one aspect of the present invention.

[0015] Figure 3 FIG. 1 is an explanatory view showing a schematic configuration example of a substrate processing apparatus according to an aspect of the present invention.

[0016] Figure 4 FIG. 2 is an explanatory view showing a substrate support portion according to an aspect of the present invention.

[0017] Figure 5 FIG. 3 is an explanatory view showing a gas supply system according to an aspect of the present invention. Figure 5 (a) is an explanatory view showing a gas supply system for a third gas and a fourth gas. Figure 5 (b) is an explanatory view showing a gas supply system for a first gas. Figure 5 (c) is an explanatory view showing a gas supply system for a second gas.

[0018] Figure 6 FIG. 4 is an explanatory view showing a gas exhaust system according to an aspect of the present invention.

[0019] Figure 7 FIG. 5 is an explanatory view showing a controller of a substrate processing apparatus according to an aspect of the present invention.

[0020] Figure 8 FIG. 6 is an explanatory view showing a schematic configuration example of a gas nozzle according to an aspect of the present invention. Figure 8 (a) is a top view of the gas nozzle. Figure 8 (b), Figure 8 (c) is a front view of the gas nozzle. DETAILED DESCRIPTION

[0021] <One Aspect of the Present Invention>

[0022] Hereinafter, embodiments of this aspect will be described with reference to the drawings. In all the figures, the same or corresponding structures are denoted by the same or corresponding reference numerals, and repeated explanations are omitted. In addition, the figures used in the following description are all schematic figures, and the dimensional relationships of the respective elements on the figures, the ratios of the respective elements, etc. are not necessarily the same as in reality. Furthermore, the dimensional relationships of the respective elements and the ratios of the respective elements are not necessarily the same between multiple figures.

[0023] (1) Structure of Substrate Processing Apparatus

[0024] Using Figures 1 to 8 , the schematic configuration of a substrate processing apparatus according to an aspect of the present invention will be described. Figure 1 FIG. 1 is a side sectional view of the substrate processing apparatus 200. Figure 2 It is Figure 1 a sectional view taken along α-α' in Figure 2As shown, the nozzles 223, 225a, and 225b are arranged in a horizontally aligned relationship. Here, in the horizontal direction, the nozzle 223 is disposed at the center of the housing 227, and the nozzles 225a and 225b are disposed on both sides thereof. Hereinafter, the nozzles 225a and 225b may sometimes be collectively referred to simply as the nozzle 225. Figure 3 It is an explanatory diagram showing the relationship between the housing 227, the heater 211, and the distribution unit. Here, for ease of explanation, the distribution unit 222 and the nozzle 223 are shown, and the distribution units 224a and 224b, and the nozzles 225a and 225b are omitted.

[0025] Next, specific details will be described. The substrate processing apparatus 200 includes a housing 201, and the housing 201 includes a reaction tube accommodation chamber 206 and a transfer chamber 217. The reaction tube accommodation chamber 206 is disposed above the transfer chamber 217.

[0026] The reaction tube accommodation chamber 206 includes: a cylindrical reaction tube 210 that extends in the vertical direction; a heater 211 as a heating unit (furnace body) that is provided on the outer periphery of the reaction tube 210; a gas supply system 212 as a gas supply mechanism; and a gas exhaust system 213 as a gas exhaust mechanism. Here, the reaction tube 210 is also referred to as a processing chamber, and the space inside the reaction tube 210 is also referred to as a processing space. The reaction tube 210 can accommodate a substrate support unit 300 described later.

[0027] The heater 211 is provided with a resistance heating heater on the inner surface facing the reaction tube 210, and a heat insulating portion is provided so as to surround them. Therefore, it is configured such that the thermal influence is reduced on the outer side of the heater 211, that is, on the side not facing the reaction tube 210. A heater control unit 211a is electrically connected to the resistance heating heater of the heater 211. By controlling the heater control unit 211a, it is possible to control the on / off and heating temperature of the heater 211. The heater 211 can be heated to a temperature at which a gas described later can be thermally decomposed. In addition, the heater 211 is also referred to as a processing chamber heating unit or a first heating unit.

[0028] Inside the reaction tube accommodation chamber 206, a reaction tube 210, an upstream side rectifying unit 214, and a downstream side rectifying unit 215 are provided. The gas supply unit may include the upstream side rectifying unit 214. In addition, the gas exhaust unit may include the downstream side rectifying unit 215.

[0029] The gas supply system 212 is provided upstream in the gas flow direction of the reaction tube 210, and gas is supplied from the gas supply system 212 to the reaction tube 210. The gas exhaust system 213 is provided downstream in the gas flow direction of the reaction tube 210, and the gas inside the reaction tube 210 is discharged from the gas exhaust system 213.

[0030] An upstream rectifying section 214 for rectifying the flow of the gas supplied from the gas supply system 212 is provided between the reaction tube 210 and the gas supply system 212. That is, the gas supply system 212 is adjacent to the upstream rectifying section 214. In addition, a downstream rectifying section 215 for rectifying the flow of the gas discharged from the reaction tube 210 is provided between the reaction tube 210 and the gas exhaust system 213. The lower end of the reaction tube 210 is supported by a manifold 216.

[0031] The reaction tube 210, the upstream rectifying section 214, and the downstream rectifying section 215 are of a continuous structure and are formed of materials such as quartz and SiC, for example. They are composed of heat-transmissive components that transmit the heat radiated from the heater 211. The heat of the heater 211 heats the substrate S and the gas.

[0032] The housing constituting the gas supply system 212 is made of metal, and the housing 227 that is a part of the upstream rectifying section 214 is made of quartz or the like. The gas supply system 212 and the housing 227 are separable and are fixed via an O-ring 229 when fixed. The housing 227 is connected to the connecting portion 206a on the side of the reaction tube 210.

[0033] The housing 227 extends in a direction different from that of the reaction tube 210 when viewed from the reaction tube 210 side and is connected to the gas supply system 212 described later. The heater 211 and the housing 227 are adjacent to each other at the adjacent portion 227b between the reaction tube 210 and the gas supply system 212. The adjacent portion is referred to as the adjacent portion 227b.

[0034] The gas supply system 212 is provided inside the adjacent portion 227b when viewed from the reaction tube 210. The gas supply system 212 includes a distribution portion 224a that can communicate with a gas supply tube 261 described later, a distribution portion 224b that can communicate with a gas supply tube 271, and a distribution portion 222 that can communicate with a gas supply tube 251. A plurality of nozzles 223 are provided on the downstream side of the distribution portion 222, a plurality of nozzles 225a are provided on the downstream side of the distribution portion 224a, and a plurality of nozzles 225b are provided on the downstream side of the distribution portion 224b. A plurality of each nozzle are arranged in the vertical direction. Figure 1 The distribution portion 222 and the nozzle 223 are described in. In addition, a housing portion 290 is arranged beside the gas supply system 212. The housing portion 290 extends in a direction parallel to the surface of the substrate S on the side of the reaction tube 210 and houses a gas nozzle 220 that is a gas supply portion (gas supply structure) described later.

[0035] At the front end side of each of the nozzles 223, 225a, and 225b (the side opposite to the communication side with the distribution parts 222, 224a, and 224b), there are blowout ports described later. Each of the nozzles 223, 225a, and 225b supplies gas into the processing space through the blowout ports at the front end side. In addition, each of the nozzles 223, 225a, and 225b and the blowout ports communicating with them are provided in the gas nozzle 220 described later.

[0036] As described later, since the distribution part 222 can distribute the raw material gas, it is also called the raw material gas distribution part. Since the nozzle 223 supplies the raw material gas, it is also called the raw material gas supply nozzle.

[0037] In addition, since the distribution parts 224a and 224b can distribute the reaction gas, they are also called the reaction gas distribution parts. Since the nozzles 225a and 225b supply the reaction gas, they are also called the reaction gas supply nozzles.

[0038] The gas supply pipe 251, the gas supply pipe 261, and the gas supply pipe 271 supply different types of gases as described later.

[0039] As Figure 3 shown, a plurality of blowout holes 222c are provided in the distribution part 222. The blowout holes 222c are arranged so as not to overlap in the vertical direction. The plurality of nozzles 223 are connected in such a way that the blowout holes 222c provided in the distribution part 222 communicate with the inside of each of the nozzles 223. The nozzles 223 are arranged between the partition plates 226 described later in the vertical direction or between the housing 227 and the partition plates 226.

[0040] The distribution part 222 includes a distribution structure 222a connected to the nozzle 223 and an introduction pipe 222b. The introduction pipe 222b is configured to communicate with the gas supply pipe 251 of the gas supply part 250 described later.

[0041] The distribution structure 222a is arranged on the inner side of the heater 211 when viewed from the reaction tube 210. Therefore, the distribution structure 222a is arranged at a position where it is difficult to be affected by the heater 211.

[0042] An upstream heater 228 that can be heated at a temperature lower than that of the heater 211 is provided around the gas supply system 212 and the housing 227. The upstream heater 228 is configured to include two heaters 228a and 228b. Specifically, the upstream heater 228a is provided around the surface of the housing 227 and the surface between the gas supply system 212 and the adjacent part 227b. In addition, the upstream heater 228b is provided around the gas supply system 212. In addition, the upstream heater 228 is also called the upstream heating part or the second heating part.

[0043] Here, the low temperature is, for example, a temperature at which the gas supplied into the distribution unit 222 will not liquefy again. Further, it is a temperature that maintains the gas in a low decomposition state.

[0044] Similar to the distribution unit 222, the distribution unit 224a is provided with a distribution structure 224c connected to the nozzle 225a and an introduction pipe 224e. The introduction pipe 224e is configured to communicate with the gas supply pipe 261 of the gas supply unit 260 described later. The distribution unit 224a and the nozzle 225a are connected in such a way that the hole 224g provided in the distribution unit 224a communicates with the inside of the nozzle 225a. Similarly, the distribution unit 224b is provided with a distribution structure 224d connected to the nozzle 225b and an introduction pipe 224f. The introduction pipe 224f is configured to communicate with the gas supply pipe 271 of the gas supply unit 270 described later. The distribution unit 224b and the nozzle 225b are connected in such a way that the hole 224h provided in the distribution unit 224b communicates with the inside of the nozzle 225b. The nozzles 225a and 225b are arranged at line-symmetric positions with respect to, for example, the nozzle 223 as the center.

[0045] In this way, by providing the distribution unit and the nozzle according to the supplied gas, it is possible to prevent the gases supplied from the respective gas supply pipes from mixing in the respective gas distribution units.

[0046] At least a part of the structure of the upstream heater 228a is arranged in parallel with the extending directions of the nozzle 223, the nozzles 225a, and 225b. At least a part of the structure of the upstream heater 228b is arranged along the arrangement direction of the distribution unit 222. In this way, it is possible to maintain a low temperature even inside the nozzle and the distribution unit.

[0047] The heater control unit 228 is electrically connected to the upstream heater 228. Specifically, the heater control unit 228c is connected to the upstream heater 228a, and the heater control unit 228d is connected to the upstream heater 228b. By controlling the heater control units 228c and 228d, it is possible to control the on / off and heating temperature of the heater 228. In addition, although two heater control units 228c and 228d are described here, it is not limited thereto. As long as the desired temperature control can be performed, one heater control unit or three or more heater control units can also be used. In addition, the upstream heater 228 is also referred to as the second heater.

[0048] The upstream heater 228 has a detachable structure and can be removed from the gas supply system 212 and the housing 227 in advance when the gas supply system 212 and the housing 227 are separated. Alternatively, it can be fixed to each part, and when the gas supply system 212 and the housing 227 are separated, the gas supply system 212 and the housing 227 can also be separated while remaining fixed to the gas supply system 212 and the housing 227.

[0049] Between the upstream heater 228a and the housing 227, a metal cover 212a made of, for example, metal and serving as a cover may be provided. By providing the metal cover 212a, heat emitted from the upstream heater 228a can be efficiently supplied to the inside of the housing 227. In particular, since the housing 227 is made of quartz, there is a concern about heat escape. However, by providing the metal cover 212a, heat escape can be suppressed. Therefore, it is not necessary to heat excessively, and the power supply to the heater 228 can be suppressed.

[0050] A metal cover 212b may also be provided between the upstream heater 228b and the housing constituting the gas supply system 212. By providing the metal cover 212b, heat emitted from the upstream heater 228b can be efficiently supplied to the distribution unit. Therefore, the power supply to the upstream heater 228 can be suppressed.

[0051] The upstream rectifying unit 214 includes a housing 227 and a partition plate 226. A portion of the partition plate 226 serving as a partitioning portion and facing the substrate S extends in the horizontal direction at least larger than the diameter of the substrate S. The so-called horizontal direction herein refers to the side wall direction of the housing 227. A plurality of partition plates 226 are arranged vertically in the housing 227. The partition plate 226 is fixed to the side wall of the housing 227 and is configured such that gas does not move to adjacent regions below or above across the partition plate 226. By being configured not to cross, the gas flow described later can be reliably formed.

[0052] The partition plate 226 has a non-porous continuous structure. Each partition plate 226 is provided at a position corresponding to the substrate S. Nozzles 223, 225a, and 225b are provided between the partition plates 226 and between the partition plate 226 and the housing 227. That is, the nozzles 223, 225a, and 225b are provided at least according to the partition plate 226.

[0053] In addition, it is preferable that each distance between each partition plate 226 and the nozzle 223 disposed above it is the same distance. That is, it is configured such that the nozzle 223 and the partition plate 226 or the housing 227 disposed below it are respectively arranged at the same height. In this way, the distance from the front end of the nozzle 223 to the partition plate 226 can be made the same, so that the degree of decomposition on the substrate S can be made uniform among multiple substrates.

[0054] The gas blown out from the nozzles 223 and 225 is rectified by the partition plate 226 to make the gas flow rectified and is supplied to the surface of the substrate S. Since the partition plate 226 extends in the horizontal direction and has a non-porous continuous structure, the main flow of the gas moves in the horizontal direction, and the movement in the vertical direction is suppressed. Therefore, the pressure loss of the gas reaching each substrate S can be made uniform in the entire vertical direction.

[0055] In this solution, the diameter of the blowing holes 222c provided in the distribution section 222 is configured to be smaller than the distance between the partition plates 226 or the distance between the housing 227 and the partition plates 226.

[0056] The downstream rectifying section 215 is configured such that, in a state where the substrate S is supported by the substrate support section 300, the ceiling is higher than the position of the uppermost substrate S and the bottom is lower than the position of the lowermost substrate S disposed in the substrate support section 300.

[0057] The downstream rectifying section 215 includes a housing 231 and partition plates 232. The portion of the partition plate 232 facing the substrate S extends in the horizontal direction in a manner that is at least larger than the diameter of the substrate S. Here, the so-called horizontal direction refers to the side wall direction of the housing 231. Further, a plurality of partition plates 232 are arranged in the vertical direction. The partition plates 232 are fixed to the side walls of the housing 231 and are configured such that gas does not move across the partition plates 232 to adjacent regions below or above. By setting it so that it does not cross, the gas flow described later can be reliably formed. A flange 233 is provided on the side of the housing 231 in contact with the gas exhaust system 213.

[0058] The partition plate 232 has a non-porous and continuous structure. The partition plates 232 are provided at positions corresponding to the substrates S respectively and at positions corresponding to the partition plates 226 respectively. The corresponding partition plates 226 and partition plates 232 are desirably of the same height. Further, when processing the substrate S, it is desirable to align the height of the substrate S with the heights of the partition plates 226 and partition plates 232. By adopting such a structure, the gas supplied from each nozzle forms a flow that passes over the partition plates 226, the substrate S, and the partition plates 232 as shown by the arrows in the figure. At this time, the partition plate 232 extends in the horizontal direction and has a non-porous and continuous structure. By adopting such a structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Therefore, the gas flow of the gas passing through each substrate S forms in the horizontal direction toward the gas exhaust system 213 while being suppressed from flowing in the vertical direction.

[0059] By providing the partition plates 226 and partition plates 232, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S respectively. Therefore, a horizontal gas flow that suppresses the flow in the vertical direction can be reliably formed over the partition plates 226, the substrate S, and the partition plates 232.

[0060] The gas exhaust system 213 is provided downstream of the downstream rectifying section 215. The gas exhaust system 213 mainly includes a housing 241 and a gas exhaust pipe connection portion 242. A flange 243 is provided on the side of the housing 241 on the downstream rectifying section 215 side.

[0061] The gas exhaust system 213 is spatially connected to the downstream side rectifying section 215. The housing 231 and the housing 241 have a highly continuous structure. The ceiling portion of the housing 231 is formed at the same height as the ceiling portion of the housing 241, and the bottom portion of the housing 231 is formed at the same height as the bottom portion of the housing 241.

[0062] The gas that has passed through the downstream side rectifying section 215 is discharged from the exhaust hole 244. At this time, since the gas exhaust structure does not have a structure such as a partition plate, a gas flow in the vertical direction is formed toward the gas exhaust hole.

[0063] The transfer chamber 217 is provided below the reaction tube 210 via the manifold 216. In the transfer chamber 217, the substrate S is placed (loaded) on the substrate holder (hereinafter, sometimes simply referred to as a susceptor) 300 by a vacuum transfer robot (not shown), or the substrate S is taken out from the substrate holder 300 by the vacuum transfer robot.

[0064] Inside the transfer chamber 217, the following can be accommodated: the substrate holder 300; the partition plate support portion 310; and the vertical direction drive mechanism portion 400, which constitutes a first drive portion that drives the substrate holder 300 and the partition plate support portion 310 (collectively referred to as the substrate holder) in the vertical direction and the rotation direction. Figure 1 FIG. shows a state in which the substrate holder 300 is raised by the vertical direction drive mechanism portion 400 and accommodated in the reaction tube.

[0065] Next, use Figure 1 , Figure 4 To explain the details of the substrate support portion in detail.

[0066] The substrate support portion is at least composed of the substrate holder 300, and the substrate S is transferred by a vacuum transfer robot inside the transfer chamber 217 via the substrate transfer port 149, or the transferred substrate S is transferred into the reaction tube 210 to perform a process of forming a thin film on the surface of the substrate S. In addition, it is also conceivable that the substrate support portion includes the partition plate support portion 310.

[0067] The partition plate support portion 310 has a plurality of circular plate-shaped partition plates 314 fixed at a predetermined interval to the columns 313 supported between the base portion 311 and the top plate 312. The substrate holder 300 has the following structure: a plurality of support rods 315 are supported on the base portion 311, and a plurality of substrates S are supported at a predetermined interval by the plurality of support rods 315.

[0068] A plurality of substrates S are placed on a substrate holder 300 at a predetermined interval by a plurality of support rods 315 supported by a base 311. A plurality of substrates S supported by the support rods 315 are separated at a predetermined interval by a disc-shaped partition plate 314 fixed (supported) to a support column 313 supported by a partition plate support portion 310. Here, the partition plate 314 is disposed on either or both of the upper and lower portions of the substrate S.

[0069] The predetermined interval between the plurality of substrates S placed on the substrate holder 300 is the same as the vertical interval of the partition plate 314 fixed to the partition plate support portion 310. In addition, the diameter of the partition plate 314 is formed to be larger than the diameter of the substrate S.

[0070] The susceptor 300 supports multiple substrates S, for example, five substrates S, in multiple layers in the vertical direction by a plurality of support rods 315. The base 311 and the plurality of support rods 315 are formed of materials such as quartz and SiC. In addition, an example in which five substrates S are supported by the susceptor 300 is shown here, but it is not limited thereto. For example, the susceptor 300 may be configured to support about 5 to 50 substrates S. In addition, the partition plate 314 of the partition plate support portion 310 is also referred to as a spacer.

[0071] The partition plate support portion 310 and the substrate holder 300 are driven in the vertical direction between the reaction tube 210 and the transfer chamber 217 and in the rotational direction around the center of the substrate S supported by the substrate holder 300 by an up-down drive mechanism portion 400.

[0072] The up-down drive mechanism portion 400 constituting the first drive portion includes an up-down drive motor 410, a rotational drive motor 430, and a susceptor up-down mechanism 420 as drive sources. The susceptor up-down mechanism 420 includes a linear actuator as a substrate holder lifting mechanism for driving the substrate holder 300 in the vertical direction.

[0073] Next, Figure 5 (a) to Figure 5 (c) will be used to explain the details of the gas supply system.

[0074] As Figure 5 As described in (a), in the gas supply pipe 251, a fourth gas source 252, a mass flow controller (flow control portion) MFC 253 as a flow controller, and a valve 254 as an on-off valve are provided in order from the upstream direction. The fourth gas source 252 is a gas source of a fourth gas, for example, as a raw material gas.

[0075] The fourth gas supply system 250 (also referred to as a raw material gas supply system) is mainly composed of the gas supply pipe 251, the MFC 253, and the valve 254. The gas supply pipe 251 is connected to an introduction pipe 222b of the distribution portion 222.

[0076] On the downstream side of the valve 254 in the supply pipe 251, a gas supply pipe 255 is connected. In the gas supply pipe 255, in order from the upstream direction, an inert gas source 256, an MFC 257, and a valve 258 as an on-off valve are provided in sequence.

[0077] The third inert gas supply system is mainly composed of the gas supply pipe 255, the MFC 257, and the valve 258. The inert gas supplied from the inert gas source 256 acts as a purge gas for purging the gas remaining in the reaction tube 210 in the substrate processing step. The third inert gas supply system can also be added to the fourth gas supply system 250.

[0078] As Figure 5 As described in (b), in the gas supply pipe 261, in order from the upstream direction, a first gas source 262, an MFC 263 as a flow controller (flow control unit), and a valve 264 as an on-off valve are provided in sequence. The gas supply pipe 261 is connected to the introduction pipe 224e of the distribution unit 224a. The first gas source 262 is a gas source of a first gas, for example, as a reaction gas.

[0079] The first gas supply system 260 is mainly composed of the gas supply pipe 261, the MFC 263, and the valve 264.

[0080] On the downstream side of the valve 264 in the supply pipe 261, a gas supply pipe 265 is connected. In the gas supply pipe 265, in order from the upstream direction, an inert gas source 266, an MFC 267, and a valve 268 as an on-off valve are provided in sequence. An inert gas is supplied from the inert gas source 266.

[0081] The first inert gas supply system is mainly composed of the gas supply pipe 265, the MFC 267, and the valve 268. The inert gas supplied from the inert gas source 266 acts as a purge gas for purging the gas remaining in the reaction tube 210 in the substrate processing step. The first inert gas supply system can also be added to the first gas supply system 260.

[0082] As Figure 5 As described in (c), in the gas supply pipe 271, in order from the upstream direction, a second gas source 272, an MFC 273 as a flow controller (flow control unit), and a valve 274 as an on-off valve are provided in sequence. The gas supply pipe 271 is connected to the introduction pipe 224f of the distribution unit 224b.

[0083] The second gas source 272 is a gas source of a second gas, for example, as a reaction gas.

[0084] The second gas supply system 270 is mainly composed of the gas supply pipe 271, the MFC 273, and the valve 274.

[0085] On the downstream side of the valve 274 in the supply pipe 271, a gas supply pipe 275 is connected. In the gas supply pipe 275, in order from the upstream direction, an inert gas source 276, an MFC 277, and a valve 278 as an on-off valve are provided in sequence. Inert gas is supplied from the inert gas source 276.

[0086] The second inert gas supply system is mainly composed of the gas supply pipe 275, the MFC 277, and the valve 278. The inert gas supplied from the inert gas source 276 acts as a purge gas for purging the gas remaining in the reaction tube 210 during the substrate processing step. The second inert gas supply system can also be added to the second gas supply system 270.

[0087] It is preferable not to dispose an obstacle that obstructs the flow of the supplied gas between the nozzle 223, the nozzles 225a and 225b, and the substrate S. In particular, no obstacle is disposed between the nozzle 223 that supplies a gas containing a silicon-silicon bond and the substrate S.

[0088] In the case where a structure that obstructs gas flow is assumed to be disposed, it can be considered that the gas collides with the obstacle, causing the partial pressure to rise. In this way, there is a concern that the decomposition of the gas is excessively promoted. In this case, not only is the gas consumption high, but also the supply amount of the non-decomposed gas to the concave portion is reduced. As a result, there is a concern that the desired coverage rate cannot be achieved.

[0089] Therefore, in order to suppress the pressure from rising to the level that promotes decomposition, it is desirable not to provide an obstacle. In addition, although it is described here that no obstacle is provided, if the pressure does not rise to the level that promotes decomposition, there may be a certain degree of obstacle.

[0090] Next, use Figure 6 to explain the exhaust system.

[0091] The exhaust system 280 for exhausting the ambient gas of the reaction tube 210 has an exhaust pipe 281 communicating with the reaction tube 210 and is connected to the housing 241 via an exhaust pipe connection portion 242.

[0092] As Figure 6 described, it is configured such that a vacuum pump 284 as a vacuum exhaust device is connected to the exhaust pipe 281 via a valve 282 as an on-off valve and an APC (Auto Pressure Controller) valve 283 as a pressure regulator (pressure adjustment unit), and vacuum exhaust can be performed so that the pressure in the reaction tube 210 becomes a predetermined pressure (vacuum degree). The vacuum pump 284 can also be included in the exhaust system. The exhaust system 280 is also referred to as a processing chamber exhaust system.

[0093] Next, use Figure 7Explanation of the controller. The substrate processing apparatus 200 has a controller 600 that controls the operations of various parts of the substrate processing apparatus 200.

[0094] Figure 7 Schematic of the controller 600. The controller 600, as a control unit, is configured as a computer including a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage unit 603 as a storage section, and an I / O port 604. The RAM 602, the storage unit 603, and the I / O port 604 are configured to be able to exchange data with the CPU 601 via an internal bus 605. Transmission and reception of data within the substrate processing apparatus 200 are performed according to an instruction from a transmission / reception instruction section 606 that is also a function of the CPU 601.

[0095] In the controller 600, there is a network transmission / reception section 683 connected to a host device 670 via a network. The network transmission / reception section 683 can receive from the host device information related to the processing history and scheduled processing of the substrate S stored in the transfer cassette 111, etc.

[0096] The storage unit 603 is constituted by, for example, a flash memory, an HDD (Hard Disk Drive), etc. A control program for controlling the operations of the substrate processing apparatus and a process recipe that records the order, conditions, etc. of substrate processing are readably stored in the storage unit 603.

[0097] In addition, the process recipe combines each order in the substrate processing steps described later in such a way that the controller 600 can execute it and obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, the control program, etc. are collectively and simply referred to as programs. In addition, in this specification, when using the term "program", it sometimes includes only the process recipe alone, sometimes includes only the control program, and sometimes includes both. Furthermore, the RAM 602 is configured as a memory area (work area) that temporarily stores programs, data, etc. read out by the CPU 601.

[0098] The I / O port 604 is connected to each structure of the substrate processing apparatus 200. The CPU 601 is configured to read the control program from the storage unit 603 and execute it, and to read the process recipe from the storage unit 603 according to the input of an operation instruction from the input / output device 681, etc. And the CPU 601 is configured to be able to control the substrate processing apparatus 200 in accordance with the content of the read process recipe.

[0099] The CPU 601 has a transmission / reception indication unit 606. The controller 600 can be configured as the controller 600 of this solution by installing a program in a computer or the like using an external storage device (such as a magnetic disk like a hard disk, an optical disk like a DVD, an optical magnetic disk like an MO, a semiconductor memory like a USB memory) 682 that stores (records) the above-mentioned program. In addition, the unit for supplying the program to the computer is not limited to the case of supplying via the external storage device 682. For example, the program can also be supplied without passing through the external storage device 682 using a communication unit such as the Internet or a dedicated line. In addition, the storage unit 603 and the external storage device 682 are configured as computer-readable storage media. Hereinafter, they are collectively and simply referred to as storage media. In addition, in this specification, when the term storage medium is used, it sometimes includes only the storage unit 603 alone, sometimes includes only the external storage device 682 alone, and sometimes includes both of them.

[0100] (2) Structure of the gas supply unit (gas nozzle)

[0101] Next, use Figure 8 (a) to Figure 8 (c) to illustrate the schematic structure of the gas nozzle 220 which is the gas supply unit provided with each nozzle 223, 225a, 225b, etc. Figure 8 (a) to Figure 8 (c) are explanatory diagrams of the gas nozzle 220, Figure 8 (a) is a top view of the gas nozzle 220, Figure 8 (b), Figure 8 (c) are front views of the gas nozzle 220.

[0102] The gas nozzle 220 is configured to be arranged in a direction parallel to the surface of the substrate S and extend from the outside of the reaction tube 210 to the inside of the reaction tube 210. In addition, a plurality of gas nozzles 220 are arranged in the vertical direction corresponding to the plurality of substrates S supported by the substrate holder 300 respectively. That is, the gas nozzles 220 are provided in multiple layers along the direction of stacking the substrates S in the accommodating portion 290, and are arranged in accordance with the vertical interval of the plurality of substrates S between the partition plates 226 and between the partition plate 226 and the housing 227. By forming such a structure, multiple substrates S can be processed individually and at one time.

[0103] As Figure 8 (a) shows that the nozzle 223 and the nozzles 225a, 225b provided on both sides of the nozzle 223 are provided in a relationship of being arranged horizontally for each of the plurality of gas nozzles 220.

[0104] As Figure 8As shown in Fig. (a), at the front end side (the reaction tube 210 side of the processing substrate S) of each of the plurality of gas nozzles 220, specifically, at the front end sides of the nozzles 223, 225a, and 225b, a mixing portion 295 for mixing the first gas and the second gas introduced from the nozzles 225a and 225b respectively is provided. The nozzles 225a and 225b communicate with a mixed gas ejection port 225d for ejecting the mixed gas of the first gas and the second gas via the mixing portion 295. Thus, the mixed gas of the first gas and the second gas mixed in the mixing portion 295 is ejected from the mixed gas ejection port 225d onto the substrate S supported by the substrate holder 300.

[0105] In addition, as Figure 8 shown in Fig. (a) to Figure 8 (c), a gas holding portion 296 through which the third gas and the fourth gas introduced from the nozzle 223 pass (are temporarily held) is provided above the mixing portion 295 and at the front end side (the reaction tube 210 side of the processing substrate S) of the nozzle 223. In this way, since the mixing portion 295 is provided at a position separated from the nozzle 223, the third gas and the fourth gas introduced into the nozzle 223 do not move to the mixing portion 295, and the third gas and the fourth gas do not mix with the first gas and the second gas in the mixing portion 295. The front end side (the reaction tube 210 side of the processing substrate S) of the gas holding portion 296 communicates with a third ejection port 223b via a third gas branch path 223a. Thus, the third gas supplied through the nozzle 223 is ejected from the third ejection port 223b onto the substrate S supported by the substrate holder 300.

[0106] Both the mixed gas ejection port 225d and the third ejection port 223b are provided on the end face of the gas nozzle 220. Specifically, as Figure 8 shown in Fig. (b) and Figure 8 (c), on the end face of the gas nozzle 220, the mixed gas ejection port 225d is provided on the lower side in the stacking direction of the substrate S, that is, in the vertical direction (i.e., the direction perpendicular to the surface of the substrate S. Hereinafter, this direction will be simply referred to as the "vertical direction"). In contrast, the third ejection port 223b is provided on the upper side in the vertical direction. Therefore, the mixed gas of the first gas and the second gas is ejected from the mixed gas ejection port 225d on the lower side in the vertical direction, and the third gas is ejected from the third ejection port 223b on the upper side in the vertical direction.

[0107] In such a gas nozzle 220, the nozzle 225a, 225b, the mixing section 295, and the mixed gas outlet 225d form a mixed gas supply flow path for supplying the mixed gas of the first gas and the second gas on the lower side in the vertical direction. The front end sides of the nozzles 225a, 225b are respectively configured to bend vertically downward near the mixing section 295, whereby a mixed gas supply flow path for supplying the mixed gas of the first gas and the second gas can be formed on the lower side in the vertical direction. In addition, the nozzle 223, the third gas branch path 223a, and the third outlet 223b form a third gas supply flow path for supplying the third gas on the upper side in the vertical direction.

[0108] As Figure 8 (a) shows, the third gas branch path 223a forming the third gas supply flow path is formed to branch the flow of the gas from the nozzle 223 into a plurality (for example, three). Thus, as Figure 8 (b), Figure 8 (c) shows, a plurality (for example, three) of the third outlets 223b are provided along the direction orthogonal to the vertical direction (hereinafter, this direction is simply referred to as the "horizontal direction") (that is, in a relationship arranged side by side horizontally). The plurality of third outlets 223b all have the same shape, for example, are formed in a circular shape.

[0109] The mixed gas outlet 225d may also have an opening in the horizontal direction with respect to the substrate S. For example, as Figure 8 (b) shows, it is formed of a single slit shape (horizontally long shape) with the long side direction extending in the horizontal direction. In addition, for example, as Figure 8 (c) shows, it may be formed of a plurality of circular holes arranged in the horizontal direction.

[0110] (3) Sequence of the semiconductor device manufacturing process (substrate processing process)

[0111] Next, as one process of the semiconductor manufacturing process, a process of forming a thin film on the substrate S using the substrate processing apparatus 200 having the above structure will be described. In addition, in the following description, the operations of the respective parts constituting the substrate processing apparatus are controlled by the controller 600.

[0112] Here, the following film formation process will be described: Using the third gas and the first gas and the second gas, a film is formed on the substrate S by alternately supplying them.

[0113] (Transfer chamber pressure adjustment process)

[0114] Here, the pressure in the transfer chamber 217 is made the same level as that in the vacuum transfer chamber 140. Specifically, an exhaust system (not shown) connected to the transfer chamber 217 is operated to exhaust the ambient gas in the transfer chamber 217 so that the ambient gas in the transfer chamber 217 becomes a vacuum level.

[0115] In addition, the heater 282 can be operated in parallel with this process. Specifically, the heater 282a and the heater 282b can be operated respectively. When the heater 282 is operated, it is operated at least during the film treatment process 208 described later.

[0116] (Substrate loading process)

[0117] After the transfer chamber 217 becomes a vacuum level, the transfer of the substrate S is started. After the substrate S reaches the vacuum transfer chamber 140, a gate valve (not shown) adjacent to the substrate transfer port 149 is opened, and the substrate S is transferred from an adjacent vacuum transfer chamber (not shown) to the transfer chamber 217.

[0118] At this time, the substrate holder 300 stands by in the transfer chamber 217, and the substrate S is transferred to the substrate holder 300. After transferring a plurality of substrates S to the substrate holder 300, the vacuum transfer robot is retracted to the housing 141, and the substrate holder 300 is raised to move the substrate S into the reaction tube 210.

[0119] During the movement into the reaction tube 210, the substrate S is positioned so that the surface of the substrate S is aligned with the heights of the partition plates 226 and 232.

[0120] (Heating process)

[0121] After the substrate S is transferred into the reaction tube 210, control is performed so that the inside of the reaction tube 210 becomes a predetermined pressure, and the heater 211 is controlled so that the processing temperature becomes a predetermined temperature.

[0122] (Film treatment process)

[0123] In the film treatment process S208, the following steps a and b are sequentially executed.

[0124] [Step a]

[0125] In step a, a source gas as a fourth gas is supplied to the substrate S in the reaction tube 210.

[0126] Specifically, valve 254 is opened, and the fourth gas flows into the gas supply pipe 251. The fourth gas is flow-adjusted by MFC 253, supplied into the reaction tube 210 via the nozzle 223, and then exhausted. At this time, the fourth gas is supplied to the substrate S from the side of the substrate S (fourth gas supply). At this time, valves 268 and 278 are opened, and inert gas is supplied into the reaction tube 210 via nozzles 255a and 255b, respectively.

[0127] As the processing conditions for this step, examples are as follows:

[0128] Processing temperature: 250 to 550 °C, preferably 400 to 500 °C

[0129] Processing pressure: 100 to 4000 Pa, preferably 100 to 1000 Pa

[0130] Fourth gas supply flow rate: 0.1 to 3 slm

[0131] Fourth gas supply time: 1 to 100 seconds, preferably 1 to 30 seconds

[0132] Inert gas supply flow rate (for each gas supply pipe): 0 to 10 slm.

[0133] In addition, the description of the numerical range such as "250 to 550 °C" in this specification means that the lower limit value and the upper limit value are included in this range. Therefore, for example, "250 to 550 °C" means "250 °C or higher and 550 °C or lower". The same applies to other numerical ranges. In addition, the processing temperature in this specification refers to the temperature of the substrate S or the temperature inside the reaction tube 210, and the processing pressure refers to the pressure inside the reaction tube 210. In addition, gas supply flow rate: 0 slm means that the gas is not supplied. The same applies to the following descriptions.

[0134] Under the above conditions, for example, a chlorosilane-based gas is supplied to the substrate S as the fourth gas (raw material gas), whereby a Cl-containing Si layer is formed on the outermost surface of the substrate S as the substrate. The Cl-containing Si layer is formed by physical adsorption or chemical adsorption of the molecules of the chlorosilane-based gas on the outermost surface of the substrate S, physical adsorption or chemical adsorption of the molecules of the decomposed substance of a part of the chlorosilane-based gas, and deposition of Si caused by thermal decomposition of the chlorosilane-based gas. The Cl-containing Si layer can be an adsorption layer (physical adsorption layer or chemical adsorption layer) of the molecules of the chlorosilane-based gas or the decomposed substance of a part of the chlorosilane-based gas, or a deposition layer of Cl-containing Si. In this specification, the Cl-containing Si layer is also simply referred to as the Si layer.

[0135] In this embodiment, when supplying the fourth gas to the substrate S, an inert gas is supplied from the mixed gas ejection port 225d extending (arranged) in the horizontal direction, thereby assisting in diffusing the fourth gas to the left and right, and enabling the fourth gas to be uniformly supplied within the surface of the substrate S.

[0136] After forming the Si-containing layer, the valve 254 is closed to stop supplying the fourth gas into the reaction tube 210. Then, the inside of the reaction tube 210 is evacuated, and the gas remaining in the reaction tube 210 is removed (purified) from the reaction tube 210. At this time, with the valves 268 and 278 kept open, an inert gas is supplied into the reaction tube 210. The inert gas functions as a purifying gas. Here, as the inert gas, rare gases such as nitrogen (N2) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, and xenon (Xe) gas are supplied. As the inert gas, one or more of them can be used.

[0137] [Step b]

[0138] After the completion of step a, the first gas and the second gas (reaction gases) are excited into a plasma state and supplied to the substrate S within the reaction tube 210, that is, the Si-containing layer formed on the substrate S.

[0139] Specifically, the valves 264 and 274 are opened, and the first gas and the second gas respectively flow into the gas supply pipes 261 and 271. The first gas and the second gas are respectively adjusted in flow rate by the MFCs 263 and 273, and are supplied into the reaction tube 210 via the nozzles 255a and 255b (the first gas and the second gas are supplied). At this time, using a plasma generation unit (not shown), the first gas and the second gas supplied into the reaction tube 210 are excited into a plasma state. In addition, at this time, the valve 258 is opened, and an inert gas as the third gas is supplied into the reaction tube 210 via the nozzle 223.

[0140] As the processing conditions for this step, the following are exemplified:

[0141] Processing temperature: 200 - 900 °C, preferably 300 - 850 °C, more preferably 400 - 750 °C

[0142] Processing pressure: 13 - 400 Pa

[0143] First gas supply flow rate: 0.001 - 10 slm

[0144] First gas supply time: 10 - 600 seconds, preferably 1 - 50 seconds

[0145] Second gas supply flow rate: 0.001 - 5 slm

[0146] Second gas supply time: 10 to 600 seconds, preferably 1 to 50 seconds

[0147] Inert gas supply flow rate (for each gas supply pipe): 0 to 10 slm

[0148] RF power: 100 to 1000 W

[0149] RF frequency: 13.56 MHz or 27.12 MHz.

[0150] Under the above conditions, for example, a hydrogen-containing gas is used as the first gas and an oxygen-containing gas is used as the second gas, and they are respectively excited into a plasma state and supplied to the substrate S. As a result, at least a part of the Si-containing layer formed on the substrate S is oxidized (modified). As a result, a silicon oxide layer (SiO layer) is formed on the outermost surface of the substrate S as a base as a layer containing Si and O. When forming the SiO layer, impurities such as Cl originally contained in the Si-containing layer form a gaseous substance containing at least Cl during the modification reaction of the Si-containing layer by the first gas and the second gas, and are discharged from the inside of the reaction tube 210. As a result, the SiO layer becomes a layer with fewer impurities such as Cl than the Si-containing layer formed in step a. Here, for example, hydrogen (H2) gas, deuterium ( 2 H2) gas, etc. can be used as the first gas. One or more of them can be used as the first gas. In addition, for example, O2 gas, ozone (O3) gas, hydrogen peroxide (H2O2) gas, water vapor (H2O gas) gas, etc. can be used as the second gas. One or more of them can be used as the second gas.

[0151] As described above, a mixing portion 295 for mixing the first gas and the second gas introduced from the nozzles 225a and 225b, respectively, is provided in the gas nozzle 220. As a result, before the first gas and the second gas reach the substrate S, H radicals, O radicals, and other molecules contributing to the formation of the oxide film can be generated in the mixing portion 295, and a high film formation rate can be ensured.

[0152] As described above, the shape of the mixed gas ejection port 225d for ejecting the mixed gas of the first gas and the second gas is configured as a slit shape (horizontally long shape) with a large width in the horizontal direction or a plurality of circular holes arranged in the horizontal direction, so that the mixed gas can be uniformly supplied within the plane of the substrate S.

[0153] In addition, if the processing temperature is less than 200 °C, the generation amount of H radicals and O radicals may be insufficient. By setting the processing temperature to 200 °C or higher, a sufficient amount of H radicals and O radicals can be generated, and the SiO layer can be formed. By setting the processing temperature to 300 °C or higher, the above effects can be reliably obtained. By setting the processing temperature to 400 °C or higher, the above effects can be more reliably obtained.

[0154] If the processing temperature exceeds 900 °C, the temperature inside the reaction tube 210 tends to be high, and sometimes it catches fire. By setting the processing temperature to 900 °C or lower, the fire can be suppressed. By setting the processing temperature to 850 °C or lower, the above effects can be reliably obtained. By setting the processing temperature to 750 °C or lower, the above effects can be obtained more reliably.

[0155] In addition, when the processing pressure is 13 Pa, sometimes the generation amounts of H radicals and O radicals are insufficient. By setting the processing pressure to 13 Pa or higher, sufficient amounts of H radicals and O radicals can be generated, and a SiO layer can be formed.

[0156] If the processing pressure exceeds 400 Pa, the temperature inside the reaction tube 210 tends to be high, and sometimes it catches fire. By setting the processing pressure to 400 Pa or lower, the fire can be suppressed.

[0157] In this solution, it is configured that the first gas and the second gas are mixed in the mixing unit 295 just before being supplied to the substrate S. Thus, even if the inside of the reaction tube 210 is at a high temperature and high pressure, since the residence time of the mixed gas can be shortened, the fire inside the reaction tube 210 can be prevented.

[0158] In addition, if the supply flow rate ratio of the second gas to the first gas (flow rate of the second gas / flow rate of the first gas) is less than 0.2, sometimes the generation amounts of H radicals and O radicals are insufficient. By setting the ratio of the flow rate of the second gas to the flow rate of the first gas to 0.2 or higher, sufficient amounts of H radicals and O radicals can be generated, and a SiO layer can be formed. By setting this ratio to 0.5 or higher, the above effects can be reliably obtained. By setting this ratio to 1.0 or higher, the above effects can be obtained more reliably.

[0159] If the ratio of the flow rate of the second gas to the flow rate of the first gas exceeds 30, the temperature inside the reaction tube 210 tends to be high, and sometimes it catches fire. By setting this ratio to 30 or lower, the fire can be suppressed. By setting this ratio to 20 or lower, the above effects can be reliably obtained. By setting this ratio to 10 or lower, the above effects can be obtained more reliably.

[0160] After forming the SiO layer, the valves 264 and 274 are closed, and the supply of the first gas and the second gas to the inside of the reaction tube 210 is stopped. In addition, the supply of RF power to the electrodes (not shown) is stopped. Then, through the same processing sequence as the purification in step a, the gas remaining inside the reaction tube 210 is removed from the inside of the reaction tube 210 (purification).

[0161] [Execute for a predetermined number of cycles]

[0162] By performing the above cycles of steps a and b non-simultaneously, i.e., asynchronously, a predetermined number of times (n times, where n is an integer of 1 or more), with the surface of the substrate S as the base, a silicon oxide film (SiO film) of a predetermined thickness, for example, is formed on this base as a film of a predetermined thickness. The above cycles are preferably repeated multiple times. That is, preferably, the thickness of the SiO layer formed in each cycle is thinner than the desired film thickness, and the above cycles are repeated multiple times until the thickness of the SiO film formed by laminating the SiO layers becomes the desired thickness.

[0163] (Substrate unloading process)

[0164] In this process, the processed substrate S is unloaded outside the transfer chamber 217 in the reverse order of the above substrate loading process.

[0165] In addition, in the above, the formation of the gas flow is shown as horizontal, but as long as the main flow of the gas is formed in the horizontal direction as a whole, and as long as it is within the range that does not affect the uniform processing of multiple substrates, it can also be a gas flow that diffuses in the vertical direction.

[0166] (4) Effects of the embodiment

[0167] According to this embodiment, one or more of the following effects can be obtained.

[0168] (a) A plurality of gas nozzles 220 are arranged in a direction parallel to the surface of the substrate S, extend from the outside of the reaction tube 210 to the inside of the reaction tube 210, and include a nozzle 225a for introducing the first gas, a nozzle 225b for introducing the second gas, and a mixing portion 295 for mixing the first gas and the second gas. The mixed gas ejected from the plurality of gas nozzles 220 having such a structure can be introduced parallel to the surface of the substrate S respectively. Thereby, the deviation of the heating temperature of the mixed gas can be suppressed, the heating conditions can be made consistent, and the film-forming process between substrates can be made uniform.

[0169] The mixing portion 295 for mixing the first gas and the second gas is provided inside the gas nozzle 220 configured to be arranged in a direction parallel to the surface of the substrate S and extend from the outside of the reaction tube 210 to the inside of the reaction tube 210. Thus, a mixed gas of the first gas and the second gas can be supplied to the substrate S. In this way, instead of mixing the first gas and the second gas on the substrate S, the mixed gas of the first gas and the second gas is supplied to the substrate S. Thereby, molecules such as H radicals and O radicals that contribute to the formation of the oxide film can be generated before reaching the substrate S, and thus the film-forming rate can be increased.

[0170] (b) The mixing section 295 having a mixed gas discharge port 225d for discharging a mixed gas of the first gas and the second gas is provided on the side of the reaction tube 210 that processes the substrate S, thereby enabling the residence time of the mixed gas in the reaction tube 210 to be shortened. Thereby, even if the reaction tube 210 is at a high temperature and high pressure, the occurrence of ignition can be prevented.

[0171] (c) The gas nozzle 220 has a nozzle 223 for introducing an inert gas as the third gas. Thereby, when the first gas and the second gas are supplied from the nozzles 225a and 225b, the inert gas is supplied from the nozzle 223, thereby preventing the first gas and the second gas from flowing backward into the nozzle 223.

[0172] (d) The nozzle 223 is arranged between the nozzles 225a and 225b. Therefore, for example, when a raw material gas is supplied as the fourth gas from the nozzle 223, the inert gas is supplied from the nozzles 225a and 225b, thereby assisting in widely supplying the fourth gas in the left - right direction.

[0173] (e) The mixing section 295 is provided at a position separated from the nozzle 223. Therefore, the third gas and the fourth gas introduced into the nozzle 223 do not move to the mixing section 295, and it is possible to prevent the third gas and the fourth gas from mixing with the first gas and the second gas in the mixing section 295.

[0174] (f) The mixed gas discharge port 225d opens in the horizontal direction with respect to the substrate S and is formed of a single slit shape (landscape shape) in which the long - side direction extends in the horizontal direction or a plurality of holes arranged in the horizontal direction, thereby enabling film formation to be uniformly performed on the surface of the substrate S without generating vortices.

[0175] (g) The gas nozzle 220 is provided in multiple layers in the stacking direction of the plurality of substrates S in the accommodating section 290, thereby enabling individual gas supply to each of the plurality of substrates S, and in - plane uniform processing can be performed on any one of the plurality of substrates S.

[0176] <Other aspects of the present invention>

[0177] Above, the aspects of the present invention have been specifically described. However, the present invention is not limited to the above - mentioned aspects, and various modifications can be made without departing from the gist thereof.

[0178] In the above - mentioned aspects, the case where the mixed gas discharge port 225d is in a slit shape or a plurality of circular holes are arranged in the horizontal direction has been exemplified, but the present invention is not limited thereto. For example, the mixed gas discharge port 225d may also be an opening in which a plurality of holes formed in a triangular or polygonal shape are arranged in the horizontal direction.

[0179] In the above-described solution, a case where a film is formed on the substrate S using the first gas, the second gas, and the fourth gas in the film formation process performed by the substrate processing apparatus is exemplified, but the present invention is not limited thereto. That is, other types of gases may be used as the processing gas for the film formation process to form other types of thin films.

[0180] In the above-described solution, the HCDS gas is exemplified as the fourth gas, but as long as it contains silicon and has an Si—Si bond, it is not limited thereto. For example, tetrachloromethylenedisilane ((CH3)2Si2Cl4, abbreviation: TCDMDS) or dichlorotetramethyldisilane ((CH3)4Si2Cl2, abbreviation: DCTMDS) may also be used.

[0181] In the above-described solution, by changing the volume of the mixing unit 295 that mixes the first gas and the second gas, the reaction state of the mixed gas can be changed, and thus a desired mixed gas can be supplied relatively easily.

[0182] In the above-described solution, the film formation process is exemplified as the process performed by the substrate processing apparatus, but the present invention is not limited thereto. That is, as long as the process is a process of supplying a gas to the substrate to be processed, the present invention can be applied not only to the film formation process but also to other substrate processes such as annealing, diffusion, oxidation, nitridation, and lithography. Further, the present invention can also be applied to other substrate processing apparatuses, such as annealing apparatuses, etching apparatuses, oxidation apparatuses, nitridation apparatuses, exposure apparatuses, coating apparatuses, drying apparatuses, heating apparatuses, and plasma-utilizing processing apparatuses. In addition, these apparatuses may be mixed. Further, with respect to a part of the above-described solution, addition, deletion, or replacement of other structures may be performed.

[0183] The recipes for the respective processes are preferably prepared individually according to the process content and stored in the storage device 603 via a telecommunication line or an external storage device 682. Further, preferably, at the start of each process, the CPU 601 appropriately selects a suitable recipe from among a plurality of recipes stored in the storage device 603 according to the process content. Thereby, films of various film types, composition ratios, film qualities, and film thicknesses can be formed with good reproducibility by one substrate processing apparatus. In addition, the burden on the operator can be reduced, and each process can be started quickly while avoiding operation errors.

[0184] The above-described recipe is not limited to newly created ones. For example, it can also be prepared by changing an existing recipe already installed in the substrate processing apparatus. When changing the recipe, the changed recipe can also be installed in the substrate processing apparatus via a telecommunication line or a storage medium storing the recipe. In addition, it is also possible to directly change the existing recipe installed in the substrate processing apparatus by operating the input / output device 122 provided in the existing substrate processing apparatus.

[0185] In the above various embodiments and various modifications, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time has been described. The present invention is not limited to the above various embodiments and various modifications. For example, it can also be appropriately applied when forming a film using a single-wafer-type substrate processing apparatus that processes one or multiple substrates at a time. In addition, in the above various embodiments and various modifications, an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace has been described. The present invention is not limited to the above various embodiments and various modifications, and can also be appropriately applied when forming a film using a substrate processing apparatus having a cold-wall type processing furnace.

[0186] When using these substrate processing apparatuses, each process can also be performed in the same processing sequence and processing conditions as those in the above various embodiments and various modifications, and the same effects as those in the above various embodiments and various modifications can be obtained.

[0187] The above various embodiments and various modifications can be appropriately combined and applied. The processing sequence and processing conditions at this time can be, for example, the same as those in the above various embodiments and various modifications.

[0188] Reference Signs

[0189] S - Substrate, 300 - Substrate Holder, 210 - Reaction Tube (Processing Chamber), 220 - Gas Nozzle (Gas Supply Structure), 290 - Accommodating Portion, 295 - Mixing Portion, 223, 225a, 225b - Nozzles.

Claims

1. A substrate processing apparatus, characterized in that, comprising: a processing chamber that houses a substrate holder for holding a plurality of substrates; a plurality of gas supply units arranged in a direction parallel to the surface of the substrate, extending from the outside of the processing chamber to the inside of the processing chamber, and including a first gas introduction part for introducing a first gas, a second gas introduction part for introducing a second gas, and a mixing part for mixing the first gas and the second gas; and a housing part that extends and is arranged in a direction parallel to the surface of the substrate on the side of the processing chamber and houses the plurality of gas supply units.

2. The substrate processing apparatus according to claim 1, wherein the mixing part is provided on the side of the processing chamber for processing the substrate.

3. The substrate processing apparatus according to claim 1, wherein the gas supply unit includes a third gas introduction part for introducing a third gas.

4. The substrate processing apparatus according to claim 3, wherein the third gas introduction part is arranged between the first gas introduction part and the second gas introduction part.

5. The substrate processing apparatus according to claim 3, wherein the mixing part is provided at a position separated from the third gas introduction part.

6. The substrate processing apparatus according to claim 1, wherein the gas supply unit includes a mixed gas ejection port for ejecting the gas mixed in the mixing part.

7. The substrate processing apparatus according to claim 6, wherein the mixed gas ejection port opens in the horizontal direction with respect to the substrate.

8. The substrate processing apparatus according to claim 6, wherein the mixed gas ejection port is composed of a plurality of holes.

9. The substrate processing apparatus according to claim 6, wherein the mixed gas ejection port is formed in a slit shape.

10. The substrate processing apparatus according to claim 1, wherein the first gas is a hydrogen-containing gas, the second gas is an oxygen-containing gas.

11. The substrate processing apparatus according to claim 3, wherein the third gas is an inert gas.

12. The substrate processing apparatus according to claim 3, wherein it is possible to supply a fourth gas different from the third gas to the third gas introduction part.

13. The substrate processing apparatus according to claim 12, wherein when supplying the fourth gas, it is possible to supply an inert gas to the first gas introduction part and the second gas introduction part.

14. The substrate processing apparatus according to claim 1, wherein the processing chamber houses a substrate holder for stacking and holding a plurality of the substrates.

15. The substrate processing apparatus according to claim 14, wherein in the direction of stacking the substrates, the gas supply units are accommodated in the housing part in multiple layers.

16. The substrate processing apparatus according to claim 12, wherein The plurality of gas supply units are configured to be inserted into the interior of the accommodation unit so as to supply a mixed gas of the first gas and the second gas to the plurality of substrates respectively from a direction parallel to the surface of the substrates in accordance with the vertical interval between the plurality of substrates, and extend from the outside of the reaction tube to the inside of the reaction tube.

17. A gas supply structure, characterized in that: It is arranged in a direction parallel to the surface of the substrate, extends from the outside of the processing chamber for processing the substrate to the inside of the processing chamber, and includes a first gas introduction part for introducing the first gas, a second gas introduction part for introducing the second gas, and a mixing part for mixing the first gas and the second gas.

18. A method of manufacturing a semiconductor device, characterized in that, It has: A step of accommodating a substrate holder in a processing chamber of a substrate processing apparatus; and A step of mixing and supplying a first gas and a second gas to a plurality of substrates, wherein the substrate processing apparatus has: the processing chamber that accommodates the substrate holder for holding the plurality of substrates; a plurality of gas supply units that are arranged in a direction parallel to the surface of the substrate, extend from the outside of the processing chamber to the inside of the processing chamber, and include a first gas introduction part for introducing the first gas, a second gas introduction part for introducing the second gas, and a mixing part for mixing the first gas and the second gas; and an accommodation unit that extends and is arranged in a direction parallel to the surface of the substrate on the side of the processing chamber and accommodates the plurality of gas supply units.

19. A program for causing a substrate processing apparatus to execute the following steps by a computer: Accommodating a substrate holder in the processing chamber of the substrate processing apparatus; and Mixing and supplying a first gas and a second gas to a plurality of substrates, Among them, wherein the substrate processing apparatus has: the processing chamber that accommodates the substrate holder for holding the plurality of substrates; a plurality of gas supply units that are arranged in a direction parallel to the surface of the substrate, extend from the outside of the processing chamber to the inside of the processing chamber, and include a first gas introduction part for introducing the first gas, a second gas introduction part for introducing the second gas, and a mixing part for mixing the first gas and the second gas; and an accommodation unit that extends and is arranged in a direction parallel to the surface of the substrate on the side of the processing chamber and accommodates the plurality of gas supply units.

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