Transparent diamond film and preparation method and application thereof
The preparation of transparent diamond films through covalent assembly method solves the problem of high temperature required for CVD-grown nanodiamond films, and realizes the preparation of transparent diamond films with low cost and high adhesion. They are suitable for electronic devices, micro-nano electromechanical systems, medical implants and other fields.
Patent Information
- Application Number
- CN202510546461.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-28
- Publication Date
- 2025-07-22
AI Technical Summary
In the prior art, CVD growing nanodiamond films require high temperatures, resulting in poor adhesion and high cost of substrates, limiting their large-scale application.
By covalent assembly, the amino silanized substrate and the carboxylated diamond grafted with the crosslinking agent are connected through covalent bonds to prepare a transparent diamond film to avoid high temperature growth and improve adhesion.
The rapid preparation of transparent diamond films at room temperature is achieved, reducing production costs and improving the adhesion and mechanical robustness of the substrate and diamond layer.
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Figure CN120349103A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of materials, and particularly relates to a transparent diamond film, a preparation method thereof, and an application thereof. Background Art
[0002] Polycrystalline diamond films are composed of sp 3 -C and sp 2 -C hybrid carbon atoms and have some excellent properties of single-crystal diamond films, including high Young's modulus, high wear resistance, chemical stability, low friction coefficient, low thermal expansion coefficient, wide light transmittance, and biocompatibility, etc. Thereby, polycrystalline diamond films are applied to electromechanical systems to significantly reduce mechanical friction and wear and their thermal expansion; serve in harsh environments to prevent corrosion; and are applied to medical implants (such as artificial hearts or bionic eyes) to improve biocompatibility. Polycrystalline diamond films are most commonly grown by chemical vapor deposition (CVD) technology. Studying the evolution of the growth preparation process enables the deposited polycrystalline diamond films to have controllable morphology, mechanical strength, and conductivity. However, the CVD technology requires the growth of diamond films at high temperatures (>700 °C), thus posing specific requirements on the substrate, which can avoid high-temperature melting, reaction with the growth process gas source, and carbon decomposition. The requirements for the CVD growth chamber, vacuum conditions, gas source, and high power increase the cost of preparing diamond film materials and hinder their large-scale application.
[0003] Assembling nanodiamond (ND) into a continuous film is a reliable means to solve the above problems. ND is a particle or aggregate with a particle size of 1 to 100 nm. Technologies for preparing ND include high pressure, high temperature ball milling, plasma-assisted CVD, and laser ablation. The development of environmentally friendly purification processes enables the low-cost production of hundreds of grams of high-purity ND (purity >95%) at one time under controlled surface chemical compositions. Existing research has reacted fluorinated ND with an amino-silanized glass surface to prepare a monolayer fluorinated ND coating on a glass slide. However, the currently reported ND film manufacturing process relies on electrostatic force or van der Waals force, so the assembled diamond film exhibits physicochemical instability and low adhesion. Summary of the Invention
[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. For this reason, one of the purposes of the present invention is to propose a transparent diamond film.
[0005] The second purpose of the present invention is to propose a preparation method of the above transparent diamond film.
[0006] The third purpose of the present invention is to propose an application of the above transparent diamond film.
[0007] The first aspect of the present invention provides a transparent diamond film, comprising a covalently assembled substrate and a diamond layer, wherein the covalent assembly comprises covalent bonding between an aminosilylated substrate and a crosslinker-grafted carboxylated diamond.
[0008] According to some embodiments of the present invention, the covalent bond comprises at least one of an amide bond, a Si-O-Si bond, and a π bond.
[0009] According to some embodiments of the present invention, the crosslinker-grafted carboxylated diamond further comprises an amine-terminated crosslinker-grafted carboxylated diamond.
[0010] According to some embodiments of the present invention, the amine termination comprises termination with at least one of ethylenediamine, n-butylamine, n-hexylamine, aniline, and perfluorooctylamine.
[0011] According to some embodiments of the present invention, the thickness of the diamond layer is 10 - 100 nm.
[0012] According to some embodiments of the present invention, the average particle size of the diamond in the diamond layer is 10 - 50 nm.
[0013] According to some embodiments of the present invention, the aminosilylation is provided by an aminosilane; the aminosilane comprises at least one of 3-aminopropyltrimethoxysilane, bis(3-aminopropyl)triethoxysilane, 3-triethoxysilyl-1-propylamine, N-β-(aminoethyl)-γ-aminopropylmethyldimethoxysilane, and N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane.
[0014] According to some embodiments of the present invention, the crosslinker is a carboxyl activator, comprising at least one of carbodiimides, uranium salts, phosphorus reagents, and carbonyl activators.
[0015] According to some embodiments of the present invention, the material of the substrate comprises at least one of glass, quartz, silicon wafers, and metals.
[0016] The second aspect of the present invention provides a method for preparing the transparent diamond film as described above, comprising the following steps: Activating the carboxylated diamond with a crosslinker, and then reacting it with the aminosilylated substrate to obtain the transparent diamond film as described above.
[0017] According to some embodiments of the present invention, the method for preparing the transparent diamond film comprises coating a solution of crosslinker-activated carboxylated diamond, optionally with ethylenediamine, on the aminosilylated substrate to obtain the transparent diamond film as described above.
[0018] According to some embodiments of the present invention, the carboxylated diamond solution is sonicated and then a crosslinker is added for activation.
[0019] According to some embodiments of the present invention, the substrate is hydroxylated and then reacted with amino silicone to obtain an aminosilylated substrate.
[0020] According to some embodiments of the present invention, the method for preparing the transparent diamond film includes the following steps: (1) Ultrasonically clean the substrate in acetone and anhydrous ethanol solution in sequence; (2) Hydroxylate the pretreated substrate using oxygen plasma; (3) React the hydroxylated substrate with amino silicone to obtain an aminosilylated substrate; place the aminosilylated substrate at 70-110°C for reaction for 5-20 min; (4) Activate the carboxylated diamond using a crosslinking agent; (5) Sequentially coat the carboxylated diamond activated by the crosslinking agent, deionized water (optionally), ethylenediamine, and deionized water on the aminosilylated substrate to obtain the transparent diamond film.
[0021] The third aspect of the present invention provides an application of the transparent diamond film in electronic devices, micro-nano electromechanical systems, medical implants, optical window materials, optical device components, and semiconductor devices.
[0022] The additional aspects and advantages of the present invention will be partially given in the following description, partially become apparent from the following description, or be understood through the practice of the present invention. Description of the Drawings
[0023] Figure 1 It is a schematic diagram of the preparation process of the covalently assembled transparent nanodiamond film in the embodiment of the present invention.
[0024] Figure 2 It is an appearance diagram of the transparent nanodiamond film obtained in Example 1 of the present invention.
[0025] Figure 3 It is the Raman test result of the transparent nanodiamond film obtained in Example 1 of the present invention.
[0026] Figure 4 It is a scanning electron microscope image of the transparent nanodiamond film obtained in Example 1.
[0027] Figure 5 It is the mechanical robustness test result of the transparent nanodiamond film obtained in Example 1 of the present invention.
[0028] Figure 6 It is the mechanical robustness test result of the transparent nanodiamond film obtained in Example 4 of the present invention. Detailed Embodiments
[0029] To make the above objects, features, and advantages of the present invention more apparent and understandable, the following provides a detailed description of the specific embodiments of the present invention. Many specific details are set forth in the following description to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.
[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the description of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.
[0031] In a first aspect of the present invention, there is provided a transparent diamond film, comprising a covalently assembled substrate and a diamond layer, wherein the covalent assembly comprises a covalent bond connection between an aminosilylated substrate and a carboxylated diamond grafted with a crosslinker.
[0032] According to the embodiments of the first aspect of the present invention, there are at least the following beneficial effects: In the present invention, the covalently assembled substrate and diamond layer overcome the limitations of the current CVD growth of nanodiamond films, which are subject to high growth temperatures, poor substrate adhesion, and high growth costs. The covalent bond connection method improves the adhesion between the substrate and the diamond layer, and the nanodiamond layer is transparent.
[0033] According to some embodiments of the present invention, the covalent bond comprises at least one of an amide bond, a Si-O-Si bond, and a π bond.
[0034] According to some embodiments of the present invention, the carboxylated diamond grafted with a crosslinker further comprises a carboxylated diamond grafted with an amine-terminated crosslinker. In the present invention, amine-terminating the diamond layer facilitates surface modification for specific application scenarios, enhances the physical and chemical robustness of the diamond layer, and improves the wear resistance of the coating.
[0035] According to some embodiments of the present invention, the amine termination comprises at least one of ethylenediamine, n-butylamine, n-hexylamine, aniline, and perfluorooctylamine termination.
[0036] According to some embodiments of the present invention, the thickness of the diamond layer is 10 - 100 nm. In the present invention, diamond layers of different thicknesses can be grown according to actual application needs.
[0037] According to some embodiments of the present invention, the average particle size of the diamond in the diamond layer is 10 - 50 nm.
[0038] According to some embodiments of the present invention, the aminosilylation is provided by an aminosilane; the aminosilane includes at least one of 3-aminopropyltrimethoxysilane (APTMS), bis(3-aminopropyl)triethoxysilane (APTES), 3-triethoxysilyl-1-propylamine (KH-550), N-β-(aminoethyl)-γ-aminopropylmethyldimethoxysilane (KH-602), and N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane (KH-792).
[0039] According to some embodiments of the present invention, the aminosilane is connected to the substrate through a siloxane bond.
[0040] According to some embodiments of the present invention, the crosslinking agent is a carboxyl activator, including at least one of carbodiimides, uranium salts, phosphorus reagents, and carbonyl activators.
[0041] According to some embodiments of the present invention, the carbodiimides include 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride (EDC), N,N'-dicyclohexylcarbodiimide (DCC), and N,N'-diisopropylcarbodiimide (DIC); According to some embodiments of the present invention, the uranium salts are such as uranyl hexafluorophosphate(1-cyano-2-ethoxy-2-oxoethylaminooxy)dimethylaminomorpholine (HATU), benzotriazol-1-yloxytris(pyrrolidino)phosphonium hexafluorophosphate (HBTU), and tetramethylfluorourea hexafluorophosphate (TBTU); According to some embodiments of the present invention, the phosphorus reagents are such as benzotriazol-1-yloxytris(dimethylamino)phosphonium hexafluorophosphate (BOP), benzotriazol-1-yloxytris(pyrrolidino)phosphonium hexafluorophosphate (PyBOP), and 7-azabenzotriazol-1-yloxytris(pyrrolidino)phosphonium hexafluorophosphate (PyAOP).
[0042] According to some embodiments of the present invention, the carbonyl activators are such as carbonyldiimidazole (CDI), N,N'-disuccinimidyl carbonate (DSC), and 4-(4,6-dimethoxy-1,3,5-triazin-2-yl)-4-methylmorpholine chloride (DMTMM).
[0043] According to some embodiments of the present invention, the material of the substrate includes at least one of glass, quartz, silicon wafers, and metals.
[0044] In a second aspect of the present invention, a method for preparing the transparent diamond film is provided, including the following steps: Activating the carboxylated diamond with a crosslinking agent and then reacting it with the aminosilylated substrate to obtain the transparent diamond film.
[0045] According to the embodiments of the second aspect of the present invention, it has at least the following beneficial effects: In the present invention, the above reaction can be carried out at room temperature, avoiding high-temperature damage to the substrate during the CVD process; and the reaction time is short, and the transparent diamond film can be rapidly prepared, significantly reducing its production cost.
[0046] According to some embodiments of the present invention, the reaction temperature of the reaction is 10~40°C, such as 15~35°C.
[0047] According to some embodiments of the present invention, the reaction time of the reaction is 10~30 min.
[0048] According to some embodiments of the present invention, the method for preparing the transparent diamond film includes reacting crosslinker-activated carboxylated diamond, ethylenediamine with an aminosilylated substrate to obtain the transparent diamond film.
[0049] According to some embodiments of the present invention, the method for preparing the transparent diamond film includes coating a crosslinker-activated carboxylated diamond solution, optionally with ethylenediamine, on an aminosilylated substrate to obtain the transparent diamond film.
[0050] According to some embodiments of the present invention, the method for preparing the transparent diamond film includes successively coating a crosslinker-activated carboxylated diamond solution, deionized water; optionally with ethylenediamine, deionized water, on an aminosilylated substrate to obtain the transparent diamond film.
[0051] According to some embodiments of the present invention, the coating rate is 1000~5000 rpm.
[0052] According to some embodiments of the present invention, after the carboxylated diamond solution is ultrasonicated, a crosslinker is added for activation; the ultrasonic treatment is carried out in an electrolyte solution (such as NaCl, KCl) for 30~120 min; the mass concentration ratio of the carboxylated diamond solution to the crosslinker is 1:(0.5~2); the pH of the electrolyte solution is 6.0~7.5, such as 6.5.
[0053] According to some embodiments of the present invention, the substrate is hydroxylated and then reacted with aminosilane to obtain an aminosilylated substrate; the reaction is carried out under vacuum; the reaction time of the reaction is 30~120 min.
[0054] According to some embodiments of the present invention, the substrate is hydroxylated using oxygen plasma; the specific operation includes placing the substrate in a plasma chamber, and subjecting the surface of the substrate to hydroxylation treatment with oxygen plasma at an oxygen flow rate of 30-100 sccm, a chamber pressure of 0.8-1.5 mbar, and a power of 80-150 W; the treatment time of the hydroxylation treatment is 1-5 min.
[0055] According to some embodiments of the present invention, the amino-silanized substrate is reacted at 70-110°C for 5-20 min. At this temperature, the alkylsilane molecules can undergo a cross-linking reaction.
[0056] According to some embodiments of the present invention, the method for preparing the transparent diamond film further includes pre-treating the substrate; the specific operation of the pre-treatment includes sequentially ultrasonically cleaning the substrate in acetone and an absolute ethanol solution; the time of the ultrasonic cleaning is 5-20 min.
[0057] According to some embodiments of the present invention, the method for preparing the transparent diamond film includes the following steps: (1) Sequentially ultrasonically cleaning the substrate in acetone and an absolute ethanol solution; (2) Subjecting the pre-treated substrate to hydroxylation treatment using oxygen plasma; (3) Reacting the hydroxylated substrate with amino-silane to obtain an amino-silanized substrate; placing the amino-silanized substrate at 70-110°C for 5-20 min; (4) Activating the carboxylated diamond using a cross-linking agent; (5) Sequentially coating the cross-linking agent-activated carboxylated diamond, deionized water optionally, ethylenediamine, and deionized water on the amino-silanized substrate to obtain the transparent diamond film.
[0058] In a third aspect of the present invention, there is provided an application of the transparent diamond film in electronic devices, micro-nano electromechanical systems, medical implants, optical window materials, optical device components, and semiconductor devices.
[0059] According to some embodiments of the present invention, the medical implant includes any one of orthopedic, dental, cardiovascular, neurological, ophthalmic implants, biosensors, and drug delivery systems.
[0060] The following further details the content of the present invention through specific embodiments.
[0061] The raw materials in the following examples or comparative examples can all be obtained from conventional commercial channels, or can be obtained by existing technical methods.
[0062] Example 1 In this example, a transparent nanodiamond film is prepared. The specific process is as follows: A glass substrate (1 cm × 1 cm) is successively placed in acetone and anhydrous ethanol solutions and ultrasonically cleaned for 10 min each to remove surface contaminants. The cleaned glass substrate is dried with nitrogen gas. Then, the substrate is placed on the plasma chamber, and the surface of the substrate is hydroxylated by oxygen plasma for 2 min at an oxygen flow rate of 50 sccm, a chamber pressure of 1 mbar, and a power of 100 W. The treated glass substrate is immediately reacted with 20 mL or a slightly excessive amount of 3-aminopropyltriethoxysilane (APTMS) in a vacuum dryer at 20°C for 60 min. Subsequently, the amino-silanized glass substrate is placed in an oven and baked at 90°C for 10 min to crosslink the silane molecules. 1 mg / mL of ND-COOH (where the particle size of the nanodiamonds is 10 - 40 nm) is ultrasonically treated in 1 mM KCl (pH 6.5) for 1 h, and then 1 mg / mL of EDC is added for activation. Then, the EDC-activated ND-COOH solution, deionized water, ethylenediamine, and deionized water are successively spin-coated on the surface of the amino-silanized substrate. Each spin-coating is carried out at a rotation speed of 3000 rpm for 1 min. After spin-coating, the surface of the glass substrate is dried to prepare a transparent nanodiamond film.
[0063] Figure 1 Figure 1 shows a schematic diagram of the preparation process of the covalently assembled transparent nanodiamond film according to the example of the present invention.
[0064] Figure 2 Figure 2 is an appearance diagram of the transparent nanodiamond film obtained in Example 1. It can be seen that it exhibits optical transparency.
[0065] Figure 3 Figure 3 is the Raman test result of the transparent nanodiamond film obtained in Example 1. It can be found that there is a characteristic peak of diamond at 1332 cm -1 .
[0066] Figure 4 Figure 4 is a scanning electron microscope image of the transparent nanodiamond film obtained in Example 1. It can be seen that the thickness of the diamond layer is 45 nm.
[0067] After testing, the surface roughness of the transparent nanodiamond film obtained in Example 1 is less than 50 nm.
[0068] Example 2 In this example, a transparent nanodiamond film is prepared. The specific process is as follows: A glass substrate (1 cm × 1 cm) was successively placed in acetone and absolute ethanol solutions and ultrasonically cleaned for 10 min each to remove surface contaminants. The cleaned glass substrate was dried with nitrogen gas. Then, the substrate was placed on a plasma chamber, and the surface of the substrate was hydroxylated by oxygen plasma for 2 min at an oxygen flow rate of 50 sccm, a chamber pressure of 1 mbar, and a power of 100 W. The treated glass substrate was immediately reacted with 20 mL or a slightly excessive amount of 3-aminopropyltriethoxysilane (APTMS) in a vacuum dryer at 20 °C for 60 min. Subsequently, the aminosilylated glass substrate was placed in an oven and baked at 90 °C for 10 min to crosslink the silane molecules. 1 mg / mL of ND-COOH (where the particle size of the nanodiamond was 10 - 40 nm) was ultrasonically treated in 1 mM KCl (pH 6.5) for 1 h, and then 0.5 mg / mL of EDC was added for activation. Then, the EDC-activated ND-COOH solution, deionized water, ethylenediamine, and deionized water were successively spin-coated on the surface of the aminosilylated substrate. Each spin-coating was carried out at a rotation speed of 3000 rpm for 1 min. After spin-coating, the surface of the glass substrate was dried to prepare a transparent nanodiamond film. Among them, the thickness of the diamond layer was 50 nm.
[0069] Example 3 In this example, a transparent nanodiamond film was prepared. The specific process was as follows: A glass substrate (1 cm × 1 cm) was successively placed in acetone and absolute ethanol solutions and ultrasonically cleaned for 10 min each to remove surface contaminants. The cleaned glass substrate was dried with nitrogen gas. Then, the substrate was placed on a plasma chamber, and the surface of the substrate was hydroxylated by oxygen plasma for 2 min at an oxygen flow rate of 50 sccm, a chamber pressure of 1 mbar, and a power of 100 W. The treated glass substrate was immediately reacted with 20 mL or a slightly excessive amount of 3-aminopropyltriethoxysilane in a vacuum dryer at 20 °C for 60 min. Subsequently, the aminosilylated glass substrate was placed in an oven and baked at 90 °C for 10 min to crosslink the silane molecules. 1.5 mg / mL of ND-COOH (where the particle size of the nanodiamond was 10 - 40 nm) was ultrasonically treated in 1 mM KCl (pH 6.5) for 1 h, and then 0.5 mg / mL of EDC was added for activation. Then, the EDC-activated ND-COOH solution, deionized water, ethylenediamine, and deionized water were successively spin-coated on the surface of the aminosilylated substrate. Each spin-coating was carried out at a rotation speed of 3000 rpm for 1 min. After spin-coating, the surface of the glass substrate was dried to prepare a transparent nanodiamond film. Among them, the thickness of the diamond layer was 57 nm.
[0070] Example 4 In this embodiment, a nanodiamond film is prepared. The specific process is as follows: A glass substrate (1 cm × 1 cm) is successively placed in acetone and anhydrous ethanol solutions and ultrasonically cleaned for 10 min each to remove surface contaminants. The cleaned glass substrate is dried with nitrogen gas. Then, the substrate is placed on a plasma chamber, and the surface of the substrate is hydroxylated by oxygen plasma for 2 min at an oxygen flow rate of 50 sccm, a chamber pressure of 1 mbar, and a power of 100 W. The treated glass substrate is immediately reacted with 20 mL or a slightly excessive amount of 3-aminopropyltriethoxysilane in a vacuum dryer at 20°C for 60 min. Subsequently, the amino-silanized glass substrate is placed in an oven and baked at 90°C for 10 min to crosslink the silane molecules. 1 mg / mL of ND-COOH (where the particle size of the nanodiamonds is 10 - 40 nm) is ultrasonically treated in 1 mM KCl (pH 6.5) for 1 h, and then 1 mg / mL of EDC is added for activation. Then, the EDC-activated ND-COOH solution and deionized water are successively spin-coated on the surface of the amino-silanized substrate. Each spin-coating is carried out at a rotation speed of 3000 rpm for 1 min. After spin-coating, the surface of the glass substrate is dried to prepare a nanodiamond film. Among them, the thickness of the diamond layer is 46 nm.
[0071] Test Example In this test example, the properties of the nanodiamond films of Example 1 and Example 4 are tested. The specific process is as follows: The test method for the friction and wear test is as follows: A mechanical abrasion resistance test of the transparent nanodiamond film is carried out using a 4 mm silicon carbide counter ball and a 2 N load pressure through a ball-on-disk friction and wear tester. The friction speed is 150 r / min and the friction length is 3.14 cm. After the test results, the surface wear condition is observed by scanning electron microscopy.
[0072] Figure 5 、 Figure 6 They respectively correspond to the test results of the mechanical robustness of the films obtained in Example 1 and Example 4. It can be found that the wear marks at the wear tracks of the Example 1 sample are clear but not worn through to the substrate, while the Example 4 sample has been worn through to the substrate and the film fails, showing worse mechanical robustness.
[0073] The scratch method is used to test the bonding strength of the nanodiamond films of Example 1 and Example 4. After testing, the bonding strength of the nanodiamond film of Example 1 is significantly better than that of Example 4. This is because the lifetime of the acylisourea intermediate is less than 1 h. If this intermediate does not encounter an amine, it will hydrolyze and regenerate the carboxyl group. Therefore, the entire reaction process of ethylenediamine needs to be completed within nearly 1 h.
[0074] In the description of this specification, the description referring to the term "some embodiments" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above term does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.
[0075] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the claims and their equivalents.
Claims
1. A transparent diamond film, characterized in that: Comprising a covalently assembled substrate and a diamond layer, the covalent assembly comprising a covalent bond connection between an aminosilylated substrate and a carboxylated diamond grafted with a crosslinker.
2. The transparent diamond film according to claim 1, wherein: The covalent bond comprises at least one of an amide bond, a Si-O-Si bond, and a π bond.
3. The transparent diamond film according to claim 1, wherein: The carboxylated diamond grafted with a crosslinker further comprises an amine-capped carboxylated diamond grafted with a crosslinker; preferably, the amine capping comprises capping with at least one of ethylenediamine, n-butylamine, n-hexylamine, aniline, and perfluorooctylamine.
4. The transparent diamond thin film according to claim 1, wherein: The thickness of the diamond layer is 10 - 100 nm; the average particle size of the diamond in the diamond layer is 10 - 50 nm.
5. The transparent diamond film according to claim 1, characterized in that: The transparent diamond film satisfies at least one of the following conditions: (I) The aminosilylation is provided by an aminosilane; the aminosilane comprises at least one of 3-aminopropyltrimethoxysilane, bis(3-aminopropyl)triethoxysilane, 3-triethoxysilyl-1-propylamine, N-β-(aminoethyl)-γ-aminopropylmethyldimethoxysilane, and N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane; (II) The crosslinker is a carboxyl activator, comprising at least one of carbodiimides, uranium salts, phosphorus reagents, and carbonyl activators; (III) The material of the substrate comprises at least one of glass, quartz, silicon wafers, and metals.
6. A method for preparing a transparent diamond film according to any one of claims 1 to 5, characterized in that: Comprising the following steps: Activating the carboxylated diamond with a crosslinker and then reacting it with the aminosilylated substrate to obtain the transparent diamond film.
7. The method for preparing a transparent diamond film according to claim 6, characterized in that: The method for preparing the transparent diamond film comprises coating a solution of carboxylated diamond activated with a crosslinker, optionally with ethylenediamine, on the aminosilylated substrate to obtain the transparent diamond film.
8. The method for preparing a transparent diamond film according to claim 6, characterized in that: After ultrasonic treatment of the carboxylated diamond solution, a crosslinker is added for activation; preferably, the substrate is hydroxylated and then reacted with an aminosilane to obtain the aminosilylated substrate.
9. The method for preparing a transparent diamond film according to claim 6, characterized in that: The method for preparing the transparent diamond film comprises the following steps: (1) Ultrasonically cleaning the substrate successively in acetone and an absolute ethanol solution; (2) Hydroxylating the pretreated substrate using oxygen plasma; (3) Reacting the hydroxylated substrate with an aminosilane to obtain the aminosilylated substrate; placing the aminosilylated substrate at 70 - 110 °C for reaction for 5 - 20 min; (4) Activating the carboxylated diamond with a crosslinker; (5) Successively coating the carboxylated diamond activated with a crosslinker, deionized water, optionally with ethylenediamine and deionized water, on the aminosilylated substrate to obtain the transparent diamond film.
10. Application of the transparent diamond film according to any one of claims 1 - 5 in electronic devices, micro-nano electromechanical systems, medical implants, optical window materials, optical device components, and semiconductor devices.