High-transmittance conductive glass and preparation method thereof

Abstract

The invention relates to the technical field of functional glass, in particular to high-transmittance conductive glass and a preparation method thereof. The method comprises the following steps: firstly, preparing a continuous grid photoetching pattern on a glass substrate by adopting a photoetching process, enabling the glass substrate positioned in a net line to be in an exposed state, and filling photoresist in a grid; a chromium film, a silver film and an aluminum film are sequentially sputtered on a photoetching pattern, then the photoetching pattern is put into a photoresist removing solution for ultrasonic cleaning, photoresist falls off, a glass substrate in a grid is in an exposed state, net lines are filled with the chromium / silver / aluminum film, then a first Nb2O5 film, a first SiO2 film, a second Nb2O5 film and a second SiO2 film are sequentially sputtered, the films are marked as multilayer oxide films, and the multilayer oxide films are placed in the photoresist removing solution for ultrasonic cleaning. The aluminum film is placed in a sodium hydroxide solution for ultrasonic cleaning, the aluminum film reacts with the sodium hydroxide solution and is dissolved, multiple layers of oxide films located in the grids and chromium / silver films located in the net lines are left, the thickness of the multiple layers of oxide films is consistent with that of the chromium / silver films, finally, a third SiO2 film is sputtered, and the high-transmittance conductive glass is obtained.

Description

Technical Field

[0001] The present invention relates to the technical field of functional glass, and in particular to a highly transparent conductive glass and a preparation method thereof. Background Art

[0002] Conductive glass is a functional glass prepared by depositing a transparent conductive thin film with conductive properties on the surface of ordinary glass, and is widely used in fields such as solar cells, touch displays, liquid crystal displays, light-emitting diodes, smart windows, and flexible electronic devices. While realizing the electrical function of the device, it is still necessary to maintain good optical properties, especially high light transmittance, which has a crucial impact on the performance and efficiency of its practical application. However, as is well known, when introducing a transparent conductive thin film on the glass surface, such as common materials like indium tin oxide, indium zinc oxide, aluminum zinc oxide, or conductive polymers, although it can effectively endow the glass with conductive properties, it will inevitably have an adverse impact on its optical properties, especially reducing its light transmittance. This is because the conductive material itself has a certain absorption and scattering effect on light, especially in the visible light region.

[0003] Since the light transmittance of the glass itself is below 91%, therefore, preparing conductive glass with a light transmittance > 90% is a huge technical problem. An ideal conductive glass should have a low surface resistance (such as below 10 Ω / square) and a high light transmittance (such as above 80%). However, these two are often contradictory: increasing the film thickness or carrier concentration can reduce the resistance, but usually it will also cause a decrease in the light transmittance. Therefore, to achieve the co-optimization of high conductivity and high light transmittance, in-depth research needs to be carried out in aspects such as material design, thin film structure regulation, preparation process, and post-treatment technology. Summary of the Invention

[0004] To solve the above problems, the present invention utilizes an antireflection and metal grid technology, aiming to provide a highly transparent conductive glass and a preparation method thereof.

[0005] A preparation method of a highly transparent conductive glass specifically includes the following steps: (1) After cleaning the glass substrate, spin-coat a layer of photoresist on its surface, and obtain a continuous grid photolithography pattern by photolithography technology. The glass substrate located within the wire is in a bare state, and the grid is filled with photoresist; Further, the photolithography process in step (1) is a conventional photolithography process. Specifically, the glass substrate coated with photoresist is pre-baked first, and then placed under the mask plate of an ultraviolet lithography machine for exposure. Subsequently, post-baking is carried out, and then it is put into a developer for development to obtain a continuous grid photolithography pattern; the thickness of the photoresist is 1000 - 2000 nm; the continuous grid photolithography pattern is a continuous square grid photolithography pattern with grid line length of 300 μm and line width of 3 μm; the glass substrate inside the grid lines is in an exposed state, and the square grid is filled with photoresist.

[0006] Further, in step (1), pre-baking is carried out at 120 °C for 5 minutes; post-baking is carried out at 110 °C for 5 minutes.

[0007] (2) Put the sample obtained in step (1) into a magnetron sputtering chamber, pump the background vacuum to below 5×10 -4 Pa, introduce high-purity argon gas, the sputtering target is a high-purity metal chromium target, and sputter a chromium thin film on the photolithography pattern at room temperature; Further, in step (2), the sputtering gas pressure is 0.8 - 1.2 Pa, and the sputtering power is 50 - 150 W; the thickness of the chromium thin film is 10 - 30 nm, and this thin film serves as a transition layer and has an adhesion effect.

[0008] (3) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal silver target is used to sputter a silver thin film on the surface of the chromium thin film; Further, in step (3), the thickness of the silver thin film is 160 - 180 nm; the total thickness of the silver thin film and the chromium thin film is 190 nm.

[0009] (4) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal aluminum target is used to sputter an aluminum thin film on the surface of the silver thin film; Further, in step (4), the thickness of the aluminum thin film is 300 - 500 nm.

[0010] (5) Put the sample obtained in step (4) into a stripping solution and carry out ultrasonic cleaning. Then, the photoresist inside the grid reacts with the stripping solution and dissolves into the stripping solution, and the corresponding chromium / silver / aluminum thin films on the surface of the photoresist fall off accordingly. In the continuous grid photolithography pattern, the glass substrate inside the grid is in an exposed state, and the grid lines are filled with chromium / silver / aluminum thin films. The chromium / silver / aluminum thin films are the thin films obtained by sputtering a chromium thin film, a silver thin film, and an aluminum thin film in sequence in steps (2), (3), and (4); Further, in step (5), ultrasonic cleaning is carried out for 5 - 10 minutes.

[0011] (6) Place the sample obtained in step (5) into a magnetron sputtering chamber, and successively sputter a first Nb2O5 film, a first SiO2 film, a second Nb2O5 film, and a second SiO2 film on one side of the sample with a continuous grid lithography pattern by magnetron sputtering. Denote the first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film as the multi-layer oxide film; Further, when using magnetron sputtering in step (6), the background vacuum is below 5×10 -4 Pa, the sputtering gas is high-purity argon, the sputtering pressure is 0.8 - 1.2 Pa, the sputtering power is 50 - 150 W, the preparation temperature is room temperature. The target used for preparing the first Nb2O5 film and the second Nb2O5 film is a Nb2O5 ceramic target, and the target used for preparing the first SiO2 film and the second SiO2 film is a SiO2 ceramic target; Further, in step (6), the thickness of the first Nb2O5 film is 22 nm, the thickness of the first SiO2 film is 40 nm, the thickness of the second Nb2O5 film is 34 nm, and the thickness of the second SiO2 film is 94 nm.

[0012] (7) Place the sample obtained in step (6) into a sodium hydroxide solution and ultrasonically clean it. During this process, the aluminum film reacts with the sodium hydroxide solution and dissolves into the sodium hydroxide solution. Accordingly, the multi-layer oxide film on the surface of the aluminum film falls off, and the multi-layer oxide film located within the grid and the chromium / silver film located within the grid lines are left in the continuous grid lithography pattern. The thickness of the above multi-layer oxide film is the same as that of the chromium / silver film.

[0013] Further, in step (7), ultrasonically clean for 10 - 20 minutes; the mass fraction of the sodium hydroxide solution is 5%.

[0014] (8) Place the sample obtained in step (7) into a magnetron sputtering chamber, and under the same sputtering conditions as in step (6), sputter a layer of a third SiO2 film on one side of the sample with the multi-layer oxide film and the chromium / silver film, thus obtaining a high-transparency conductive glass.

[0015] Further, in step (8), the thickness of the third SiO2 film is 16 nm. The third SiO2 film plays a role in protecting silver, preventing silver from contacting with external oxygen and preventing silver from being oxidized; at the same time, the third SiO2 film also forms an anti-reflection effect on the glass with the multi-layer oxide film obtained in step (6).

[0016] The present invention also provides a high-transparency conductive glass obtained according to the above preparation method.

[0017] Compared with the prior art, the present invention has the following beneficial effects: The present invention utilizes antireflection and metal grid technologies to provide a highly transparent conductive glass and a preparation method thereof. This glass has a high visible light transmittance ≥ 91% and a low sheet resistance of 10 - 15 Ω / sq. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a schematic cross-sectional structure diagram of the highly transparent conductive glass prepared in Example 1 of the present invention; Figure 2 is a high-resolution optical topography diagram of the highly transparent conductive glass prepared in Example 1 of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0019] To better understand the content of the present invention, the present invention will be further elaborated below in conjunction with specific embodiments and drawings. The following embodiments are implemented based on the technology of the present invention, and detailed implementation manners and operation steps are given, but the protection scope of the present invention is not limited to the following embodiments.

[0020] Example 1: (1) After cleaning the glass substrate, a 1.5-μm-thick photoresist is spin-coated on its surface, pre-baked at 120 °C for 5 minutes, then placed under the mask plate of an ultraviolet lithography machine for exposure for 30 seconds. Subsequently, it is post-baked at 110 °C for 5 minutes, and then put into a developer for development for 50 seconds to obtain a continuous square grid photolithography pattern with a grid line length of 300 μm and a line width of 3 μm. The glass substrate within the grid lines is in an exposed state, and the square grid is filled with photoresist; (2) The sample obtained in step (1) is placed into a magnetron sputtering chamber, the base vacuum is pumped to 3 × 10 -4 Pa, high-purity argon is introduced, the sputtering pressure is 1.0 Pa, the sputtering power is 100 W, and a high-purity metal chromium target is used as the sputtering target to sputter a 20-nm-thick chromium film on the photolithography pattern at room temperature; (3) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal silver target is used to sputter a 170-nm-thick silver film on the chromium film surface; (4) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal aluminum target is used to sputter a 400-nm-thick aluminum film on the silver film surface; (5) Place the sample obtained in step (4) into the stripping solution and ultrasonically clean it for 8 minutes. Then, the photoresist within the square grid reacts with the stripping solution and dissolves into the stripping solution, and accordingly, the chromium / silver / aluminum thin film on the surface of the photoresist falls off. In the continuous square grid lithography pattern with grid lines 300 μm in length and 3 μm in width, the glass substrate within the square grid is in an exposed state, and the grid lines are filled with the chromium / silver / aluminum thin film, which is the thin film obtained by sequentially sputtering the chromium thin film, silver thin film, and aluminum thin film in steps (2), (3), and (4). (6) Place the sample obtained in step (5) into the magnetron sputtering chamber, pump the background vacuum to 3×10 -4 Pa, introduce high-purity argon gas, with a sputtering pressure of 1.0 Pa and a sputtering power of 100 W. At room temperature, sequentially sputter a first Nb2O5 thin film with a thickness of 22 nm, a first SiO2 thin film with a thickness of 40 nm, a second Nb2O5 thin film with a thickness of 34 nm, and a second SiO2 thin film with a thickness of 94 nm on the side of the sample with the continuous square grid lithography pattern. Denote the first Nb2O5 thin film, the first SiO2 thin film, the second Nb2O5 thin film, and the second SiO2 thin film as the multi-layer oxide thin film. (7) Place the sample obtained in step (6) into a sodium hydroxide solution with a mass fraction of 5% and ultrasonically clean it for 15 minutes. During this process, the aluminum thin film reacts with the sodium hydroxide solution and dissolves into the sodium hydroxide solution, and accordingly, the multi-layer oxide thin film on the surface of the aluminum thin film falls off. In the continuous square grid lithography pattern, the multi-layer oxide thin film within the square grid and the chromium / silver thin film within the grid lines are left. The thickness of the above multi-layer oxide thin film is the same as that of the chromium / silver thin film, both being 190 nm. (8) Place the sample obtained in step (7) into the magnetron sputtering chamber, and under the same sputtering conditions as in step (6), sputter a third SiO2 thin film with a thickness of 16 nm on the side of the sample with the multi-layer oxide thin film and the chromium / silver thin film, thus obtaining the high-transparency conductive glass.

[0021] After testing, the average visible light transmittance of the obtained conductive glass is 92.1%, and the sheet resistance is 12.1 Ω / □.

[0022] Example 2: (1) After cleaning the glass substrate, spin-coat a 1.0-μm-thick photoresist on its surface, pre-bake it at 120 °C for 5 minutes, then place it under the mask plate of an ultraviolet lithography machine for exposure for 30 seconds. Subsequently, post-bake it at 110 °C for 5 minutes, and then place it in the developer for development for 50 seconds to obtain a continuous square grid lithography pattern with grid lines 300 μm in length and 3 μm in width. The glass substrate within the grid lines is in an exposed state, and the square grid is filled with photoresist. (2) Place the sample obtained in step (1) into the magnetron sputtering chamber, evacuate the background vacuum to 5×10 -4 Pa, introduce high-purity argon gas, the sputtering pressure is 0.8 Pa, the sputtering power is 50 W, use a high-purity metal chromium target as the sputtering target, and sputter a 10-nm-thick chromium film on the photolithography pattern at room temperature; (3) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal silver target is used, and an 180-nm-thick silver film is sputtered on the surface of the chromium film; (4) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal aluminum target is used, and a 300-nm-thick aluminum film is sputtered on the surface of the silver film; (5) Place the sample obtained in step (4) into the stripping solution and ultrasonically clean it for 5 minutes. Then, the photoresist located within the square grid reacts with the stripping solution and dissolves into the stripping solution, and the corresponding chromium / silver / aluminum films on the surface of the photoresist fall off accordingly. In the continuous square grid photolithography pattern with grid lines 300 μm long and 3 μm wide, the glass substrate within the square grid is exposed, and the grid lines are filled with chromium / silver / aluminum films. The chromium / silver / aluminum films are the films obtained by sputtering chromium film, silver film, and aluminum film in sequence in steps (2), (3), and (4); (6) Place the sample obtained in step (5) into the magnetron sputtering chamber, evacuate the background vacuum to 3×10 -4 Pa, introduce high-purity argon gas, the sputtering pressure is 1.0 Pa, the sputtering power is 100 W. At room temperature, sequentially sputter a first Nb2O5 film with a thickness of 22 nm, a first SiO2 film with a thickness of 40 nm, a second Nb2O5 film with a thickness of 34 nm, and a second SiO2 film with a thickness of 94 nm on one side of the sample with the continuous square grid photolithography pattern. Denote the first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film as the multi-layer oxide film; (7) Place the sample obtained in step (6) into a 5% sodium hydroxide solution by mass fraction and ultrasonically clean it for 10 minutes. During this process, the aluminum film reacts with the sodium hydroxide solution and dissolves into the sodium hydroxide solution, and the corresponding multi-layer oxide film on the surface of the aluminum film falls off accordingly. In the continuous square grid photolithography pattern, the multi-layer oxide film located within the square grid and the chromium / silver film located within the grid lines are left. The thickness of the above multi-layer oxide film is the same as that of the chromium / silver film, both being 190 nm; (8) Place the sample obtained in step (7) into the magnetron sputtering chamber, use the same sputtering conditions as in step (6), and sputter a third SiO2 film with a thickness of 16 nm on one side of the sample with the multi-layer oxide film and the chromium / silver film, thus obtaining the high-transparency conductive glass.

[0023] The average visible light transmittance of the conductive glass obtained by detection is 91.9%, and the sheet resistance is 10.3 Ω / square.

[0024] Example 3: (1) After cleaning the glass substrate, spin-coat a 2-μm-thick photoresist on its surface, pre-bake it at 120 °C for 5 minutes, then place it under the mask plate of an ultraviolet lithography machine for 30 seconds of exposure. Subsequently, post-bake it at 110 °C for 5 minutes, and then put it into a developer for 50 seconds of development to obtain a continuous square grid lithography pattern with a grid line length of 300 μm and a line width of 3 μm. The glass substrate within the grid lines is in an exposed state, and the square grid is filled with photoresist; (2) Put the sample obtained in step (1) into a magnetron sputtering chamber, pump the background vacuum to 5×10 -4 Pa, introduce high-purity argon gas, the sputtering pressure is 1.2 Pa, the sputtering power is 150 W, use a high-purity metal chromium target as the sputtering target, and sputter a 30-nm-thick chromium film on the lithography pattern at room temperature; (3) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal silver target is used, and a 160-nm-thick silver film is sputtered on the surface of the chromium film; (4) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal aluminum target is used, and a 500-nm-thick aluminum film is sputtered on the surface of the silver film; (5) Put the sample obtained in step (4) into a stripping solution and ultrasonically clean it for 8 minutes. Then, the photoresist within the square grid reacts with the stripping solution and dissolves into the stripping solution, and the corresponding chromium / silver / aluminum films on the surface of the photoresist fall off accordingly. In the continuous square grid lithography pattern with a grid line length of 300 μm and a line width of 3 μm, the glass substrate within the square grid is in an exposed state, and the grid lines are filled with chromium / silver / aluminum films, and the chromium / silver / aluminum films are the films obtained by sputtering chromium film, silver film, and aluminum film in sequence in steps (2), (3), and (4); (6) Put the sample obtained in step (5) into a magnetron sputtering chamber, pump the background vacuum to 5×10 -4 Pa, introduce high-purity argon gas, the sputtering pressure is 1.2 Pa, the sputtering power is 150 W, and sequentially sputter a first Nb2O5 film with a thickness of 22 nm, a first SiO2 film with a thickness of 40 nm, a second Nb2O5 film with a thickness of 34 nm, and a second SiO2 film with a thickness of 94 nm on the side of the sample with the continuous square grid lithography pattern at room temperature. Denote the first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film as the multi-layer oxide film; (7) Place the sample obtained in step (6) into a sodium hydroxide solution with a mass fraction of 5%, and ultrasonically clean it for 20 minutes. During this process, the aluminum film reacts with the sodium hydroxide solution and dissolves into the sodium hydroxide solution. Accordingly, the multi-layer oxide film on the surface of the aluminum film falls off, leaving the multi-layer oxide film within the square grid and the chromium / silver film within the grid lines in the continuous square grid lithography pattern. The thickness of the above multi-layer oxide film is the same as that of the chromium / silver film, both being 190 nm; (8) Place the sample obtained in step (7) into a magnetron sputtering chamber, and under the same sputtering conditions as in step (6), sputter a third SiO2 film with a thickness of 16 nm on the side of the sample with the multi-layer oxide film and the chromium / silver film, thus obtaining a highly transparent conductive glass.

[0025] The average visible light transmittance of the obtained conductive glass is detected to be 91.5%, and the sheet resistance is 14.1 Ω / square.

[0026] Example 4: (1) After cleaning the glass substrate, spin-coat a layer of photoresist with a thickness of 1.5 μm on its surface, pre-bake it at 120 °C for 5 minutes, then place it under the mask plate of an ultraviolet lithography machine for exposure for 30 seconds. Subsequently, post-bake it at 110 °C for 5 minutes, and then place it in a developer for development for 50 seconds to obtain a continuous square grid lithography pattern with a grid line length of 300 μm and a line width of 3 μm. The glass substrate within the grid lines is in an exposed state, and the square grid is filled with photoresist; (2) Place the sample obtained in step (1) into a magnetron sputtering chamber, evacuate the background vacuum to 4×10 -4 Pa, introduce high-purity argon gas, the sputtering pressure is 1.1 Pa, the sputtering power is 120 W, use a high-purity metal chromium target as the sputtering target, and sputter a 25-nm-thick chromium film on the lithography pattern at room temperature; (3) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal silver target is used, and a 165-nm-thick silver film is sputtered on the chromium film surface; (4) The sputtering conditions in this step are the same as those in step (2), except that a high-purity metal aluminum target is used, and a 450-nm-thick aluminum film is sputtered on the silver film surface; (5) Place the sample obtained in step (4) into the stripping solution and ultrasonically clean it for 8 minutes. Then, the photoresist within the square grid reacts with the stripping solution and dissolves into the stripping solution. Consequently, the chromium / silver / aluminum film on the surface of the corresponding photoresist peels off. In the continuous square grid photolithography pattern with grid lines 300 μm in length and 3 μm in width, the glass substrate within the square grid is exposed, and the grid lines are filled with the chromium / silver / aluminum film, which is the film obtained by sequentially sputtering the chromium film, silver film, and aluminum film in steps (2), (3), and (4). (6) Place the sample obtained in step (5) into the magnetron sputtering chamber, evacuate the background vacuum to 5×10 -4 Pa, introduce high-purity argon gas, with a sputtering pressure of 1.1 Pa and a sputtering power of 150 W. At room temperature, sequentially sputter a first Nb2O5 film with a thickness of 22 nm, a first SiO2 film with a thickness of 40 nm, a second Nb2O5 film with a thickness of 34 nm, and a second SiO2 film with a thickness of 94 nm on the side of the sample with the continuous square grid photolithography pattern. Denote the first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film as the multi-layer oxide film. (7) Place the sample obtained in step (6) into a sodium hydroxide solution with a mass fraction of 5% and ultrasonically clean it for 16 minutes. During this process, the aluminum film reacts with the sodium hydroxide solution and dissolves into the sodium hydroxide solution. Consequently, the multi-layer oxide film on the surface of the corresponding aluminum film peels off. In the continuous square grid photolithography pattern, the multi-layer oxide film within the square grid and the chromium / silver film within the grid lines are left. The thickness of the above multi-layer oxide film is the same as that of the chromium / silver film, both being 190 nm. (8) Place the sample obtained in step (7) into the magnetron sputtering chamber and, under the same sputtering conditions as in step (6), sputter a third SiO2 film with a thickness of 16 nm on the side of the sample with the multi-layer oxide film and the chromium / silver film, thus obtaining the highly transparent conductive glass.

[0027] After testing, the average visible light transmittance of the obtained conductive glass is 91.7%, and the sheet resistance is 13.2 Ω / □.

[0028] The above are only embodiments of the present invention and do not impose any formal restrictions on the present invention. The present invention may also have other forms of embodiments based on the above structures and functions, which will not be listed one by one. Therefore, any person skilled in the art, without departing from the scope of the technical solution of the present invention, any simple modifications, equivalent changes, and decorations made to the above embodiments based on the technical essence of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A method for preparing a highly transparent conductive glass, characterized in that, Specifically, it includes the following steps: (1) After cleaning the glass substrate, spin-coat a layer of photoresist on its surface, and use photolithography to obtain a continuous grid photolithography pattern. The glass substrate within the wire mesh is in an exposed state, and the grid is filled with photoresist; (2) Put the sample obtained in step (1) into the magnetron sputtering chamber, pump the background vacuum to below 5×10 -4 Pa, introduce high-purity argon gas, the sputtering target is a high-purity metal chromium target, and sputter a chromium thin film on the lithography pattern at room temperature; (3) The sputtering conditions in this step are the same as those in step (2), except that high-purity metallic silver is used as the sputtering target to sputter a silver film on the chromium film surface; (4) The sputtering conditions in this step are the same as those in step (2), except that high-purity metallic aluminum is used as the sputtering target to sputter an aluminum film on the silver film surface; (5) Put the sample obtained in step (4) into a stripping solution and ultrasonically clean it, then the photoresist falls off. In the continuous grid photolithography pattern, the glass substrate within the grid is in an exposed state, and the wire mesh is filled with chromium / silver / aluminum films; (6) Use magnetron sputtering to sequentially sputter a first Nb2O5 film, a first SiO2 film, a second Nb2O5 film, and a second SiO2 film on one side of the sample obtained in step (5) with a continuous grid photolithography pattern. The first Nb2O5 film, the first SiO2 film, the second Nb2O5 film, and the second SiO2 film are denoted as the multi-layer oxide film; (7) Put the sample obtained in step (6) into a sodium hydroxide solution and ultrasonically clean it, then the aluminum film falls off. In the continuous grid photolithography pattern, the multi-layer oxide film within the grid and the chromium / silver film within the wire mesh are left, and the thickness of the multi-layer oxide film is the same as that of the chromium / silver film; (8) Put the sample obtained in step (7) into a magnetron sputtering chamber, and use the same sputtering conditions as in step (6) to sputter a third SiO2 film on the side of the sample with the multi-layer oxide film and the chromium / silver film, and then a highly transparent conductive glass is obtained.

2. The preparation method of the highly transparent conductive glass according to claim 1, characterized in that, In step (1), the specific photolithography process is to first pre-bake the glass substrate coated with photoresist, then place it under the mask plate of an ultraviolet lithography machine for exposure, then perform post-baking, and then put it into a developer for development to obtain a continuous grid photolithography pattern; the thickness of the photoresist is 1000 - 2000 nm; the continuous grid photolithography pattern is a continuous square grid photolithography pattern with a grid line length of 300 μm and a line width of 3 μm; the glass substrate within the wire mesh is in an exposed state, and the square grid is filled with photoresist.

3. The preparation method of the highly transparent conductive glass according to claim 2, characterized in that, Pre-bake at 120 °C for 5 minutes; post-bake at 110 °C for 5 minutes.

4. The preparation method of the highly transparent conductive glass according to claim 1, characterized in that, In step (2), the sputtering pressure is 0.8 - 1.2 Pa, the sputtering power is 50 - 150 W; the thickness of the chromium film is 10 - 30 nm.

5. The preparation method of the highly transparent conductive glass according to claim 1, characterized in that, In step (3), the thickness of the silver film is 160 - 180 nm, and the total thickness of the silver film and the chromium film is 190 nm; in step (4), the thickness of the aluminum film is 300 - 500 nm.

6. The preparation method of the highly transparent conductive glass according to claim 1, characterized in that, In step (5), ultrasonically clean for 5 - 10 minutes.

7. The preparation method of the highly transparent conductive glass according to claim 1, characterized in that, When magnetron sputtering is used in step (6), the background vacuum is below 5×10 -4 Pa, the sputtering gas is high-purity argon, the sputtering pressure is 0.8 - 1.2 Pa, the sputtering power is 50 - 150 W, the preparation temperature is room temperature, the target used for preparing the first Nb2O5 film and the second Nb2O5 film is a Nb2O5 ceramic target, and the target used for preparing the first SiO2 film and the second SiO2 film is a SiO2 ceramic target.

8. The preparation method of the highly transparent conductive glass according to claim 1, characterized in that, In step (6), the thickness of the first Nb2O5 film is 22 nm, the thickness of the first SiO2 film is 40 nm, the thickness of the second Nb2O5 film is 34 nm, and the thickness of the second SiO2 film is 94 nm; in step (8), the thickness of the third SiO2 film is 16 nm.

9. The preparation method of the highly transparent conductive glass according to claim 1, characterized in that, In step (7), perform ultrasonic cleaning for 10 - 20 minutes; the mass fraction of the sodium hydroxide solution is 5%.

10. A highly transparent conductive glass prepared by the preparation method according to any one of claims 1 - 9.

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