A pulsed magnetron sputtering coating device
By using a vacuum plug-in valve and sealing structure in the pulsed magnetron sputtering coating device, the substrate can be replaced without destroying the vacuum environment, solving the problem of low efficiency when replacing the substrate in the existing device, improving production efficiency and improving film uniformity.
Patent Information
- Application Number
- CN202510628722.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-15
- Publication Date
- 2025-09-26
- Estimated Expiration
- 2045-05-15
AI Technical Summary
The existing pulse sputtering coating device needs to increase the air pressure in the vacuum chamber to normal when replacing the substrate, resulting in a decrease in continuous production efficiency.
A pulsed magnetron sputtering coating device was designed. The vacuum plug-in valve and sealing structure were used to enable the substrate to be removed and replaced without destroying the vacuum environment. Combined with the installation method of the adjustable substrate and magnetron sputtering source, the continuity and uniformity of the coating process were ensured.
The efficiency of substrate replacement in the vacuum chamber is improved, the continuity of the vacuum environment is maintained, the production efficiency is increased, and the uniformity of the film is improved.
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Figure CN120350353B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of pulsed magnetron sputtering, in particular to a pulsed magnetron sputtering coating device. Background Art
[0002] Optical thin films have become ubiquitous in our lives, from daily life and agricultural industries to military and defense fields. What drives the continuous development of thin film technology is the increasingly improved thin film preparation technology. Magnetron sputtering technology is a relatively common physical vapor deposition method with a large coating area and a fast coating speed. In addition, the coating process is pollution-free and there are many types of coatings, such as metal films, high-purity cobalt ferromagnetic material films, and nickel-platinum alloy films.
[0003] Pulsed magnetron sputtering is an emerging thin-film deposition method. Its core lies in replacing traditional DC or RF power supplies with pulsed power. This method uses periodic high-energy pulses to drive the plasma and optimize the sputtering process. Pulsed magnetron sputtering achieves high-efficiency, high-quality thin-film deposition through the synergistic effect of the high-energy, instantaneous discharge of the pulsed power supply and the electromagnetic field confinement of magnetron sputtering. Its core lies in the dynamic control of the power supply, target material, and substrate. Future trends will focus on precise control of the ionization rate and the integration of multiple technologies.
[0004] However, when the existing pulse sputtering coating device performs continuous sputtering coating, since the vacuum chamber is in a low-pressure state, if the substrate needs to be replaced at this time, the air pressure in the vacuum chamber needs to be increased to normal pressure first, and then the substrate needs to be taken out and the vacuum chamber needs to be evacuated again, which reduces the efficiency of continuous production. Based on this, a pulse magnetron sputtering coating device is proposed to solve the above problem. Summary of the Invention
[0005] In view of the shortcomings of the existing technology, the present invention provides a pulsed magnetron sputtering coating device, which enables the substrate to be taken out and replaced without losing vacuum in the vacuum chamber, thereby improving the efficiency of continuous production.
[0006] To achieve the above-mentioned object, the present invention provides the following technical solution: a pulsed magnetron sputtering coating device, comprising:
[0007] A vacuum chamber, wherein a substrate and a magnetron sputtering source are arranged in the vacuum chamber, and the vacuum chamber is connected to a vacuum generating device;
[0008] a vacuum gate valve connected to the left end of the vacuum chamber; the left side of the vacuum chamber is connected to a vacuum transition chamber through the vacuum gate valve; the left end of the vacuum transition chamber is connected to a sealing tube; the left end of the sealing tube is detachably connected to a movable tube;
[0009] an operating tube disposed inside the movable tube and passing through the vacuum transition chamber and extending into the vacuum chamber, wherein the substrate is disposed at a front end of the operating tube;
[0010] The opposite ends of the movable tube and the sealing tube are formed with annular ear plates outward, and a pair of annular ear plates are connected by a KF clamp. The opposite surfaces of the pair of annular ear plates are fixed with an extrusion ring with a semicircular cross-section. The outer periphery of the operating tube is slidably connected with a transition tube, and the outer periphery of the transition tube is provided with a sealing sleeve. The two sides of the sealing sleeve are respectively fixed to the movable tube and the sealing tube. The outer periphery of the sealing sleeve is provided with an O-ring, and a vacuum welded telescopic bellows is also sealed between the right end face of the transition tube and the outer periphery of the right end of the operating tube.
[0011] Furthermore, the shell of the vacuum generating device is connected to two vacuum pumping pipelines, which are respectively connected to the vacuum chamber and the vacuum transition chamber, and are used to independently control the vacuum pumping of the vacuum chamber or the vacuum transition chamber. The inner walls of the vacuum chamber and the vacuum transition chamber are both provided with vacuum pressure sensors for detecting the internal vacuum degrees of the two.
[0012] Furthermore, a plurality of annularly distributed slide grooves are provided on the outer side of the operating tube, and a slide plate slidably connected to the slide grooves is fixed to the inner peripheral wall of the transition tube. Under the guidance of the slide plate and the slide grooves, the transition tube can be more stable when moving.
[0013] Furthermore, the right end of the operating tube is connected to a connecting part through a ceramic insulating and heat-insulating column, and an annular air uniforming bin is fixed on the outer periphery of the connecting part, and an air supply pipe is connected to the outer periphery of the annular air uniforming bin, and a plurality of pressure chambers distributed in an annular array are fixed on the inner wall of the annular air uniforming bin, one side of the pressure chamber is connected to a ventilation pipe, and a flow control valve is provided on the ventilation pipe, and a piston plate is provided in the pressure chamber, and a top rod is fixed on one side of the piston plate, which passes through the pressure chamber and extends to the outside of the annular air uniforming bin, and a universal rotating frame is fixed at the end of the connecting part, and a spherical connecting block is rotatably arranged in the universal rotating frame, and the substrate is installed at the end of the spherical connecting block. The adjustment method of the magnetron sputtering source is the same as that of the substrate. The substrate can be aligned parallel to a single magnetron sputtering source so that the centers of the two are located in the same plane. At the same time, the substrate can swing evenly in the circumferential direction during sputtering, so that the sputtered particles are evenly splashed onto the substrate, thereby improving the uniformity of the film.
[0014] Furthermore, the ceramic insulating and heat-insulating column is inserted into the end of the operating tube and transitionally matched with the operating tube. The right end of the ceramic insulating and heat-insulating column is connected to the connecting part by a bolt. The ceramic insulating and heat-insulating column can be used for insulation and heat insulation.
[0015] Furthermore, a thermocouple element and a ceramic heating rod are embedded in the spherical connecting block. The ceramic heating rod is used to heat the spherical connecting block, and the thermocouple element is used to measure the temperature of the spherical connecting block.
[0016] Furthermore, the vacuum chamber is also connected to an external gas supply device, the outer shell of the gas supply device is connected to four gas supply pipelines, and the four gas supply pipelines are respectively connected to the gas supply pipe on the annular gas uniforming bin where the substrate is located and the gas supply pipe on the annular gas uniforming bin where the three magnetron sputtering sources are located, for realizing gas supply to the annular gas uniforming bin.
[0017] Furthermore, a target flange is fixed to the right end of the vacuum chamber, and the magnetron sputtering source is sealed and installed in the vacuum chamber through the target flange. The right end of the magnetron sputtering source is connected to a magnetron sputtering target power supply, and multiple magnetron sputtering target power supplies correspond one-to-one to multiple magnetron sputtering sources.
[0018] Furthermore, a rotating rod extending into the vacuum chamber is provided through the target flange, and a fan-shaped rotating baffle is fixed to the end of the rotating rod for shielding a sputtering source or shielding before pre-sputtering.
[0019] Compared with the existing technology, the technical solution of this application has the following beneficial effects:
[0020] 1. The pulsed magnetron sputtering coating device, by pulling the operating tube, since the sealing sleeve is always tightly mounted on the outer periphery of the transition tube, the vacuum chamber and the vacuum transition chamber are still in a sealed state, and the operating tube slides to the left in the transition tube. At this time, the vacuum welding telescopic bellows can be contracted, and the operating tube can drive the substrate to be drawn out from the vacuum chamber and into the vacuum transition chamber. Then, the vacuum plug valve can be closed, and the vacuum chamber can always be a vacuum environment without being affected by the pressure. After the vacuum transition chamber returns to normal pressure, the KF clamp is removed, the extrusion ring no longer squeezes the O-ring, and the sealing ring no longer presses the transition tube. The operating tube can then be driven by the transition tube and the substrate to be taken out of the vacuum transition chamber, so that the substrate can be taken out for replacement without losing vacuum.
[0021] 2. The pulsed magnetron sputtering coating device supplies gas to the inside of the annular uniform gas chamber through the gas supply pipe, and the flow control valve on the vent pipe can be used to control the gas volume entering the corresponding pressure chamber, so that the ejection distance of the ejector rod is different, so that the substrate can swing in a circular manner. In addition, the installation method of the magnetron sputtering source is the same as that of the substrate, so that the substrate can be parallel to the corresponding magnetron sputtering source, and the substrate can swing evenly in the circumferential direction relative to the magnetron sputtering source, making the splashing more uniform. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 It is a schematic diagram of the structure of the present invention;
[0023] Figure 2Schematic diagram of the connection structure between the operating tube and the substrate in the present invention;
[0024] Figure 3 For the present invention Figure 2 A schematic diagram of the enlarged structure of the middle part A;
[0025] Figure 4 For the present invention Figure 2 Schematic diagram of the enlarged structure of part B in the middle.
[0026] Figure: 1, vacuum chamber; 2, substrate; 3, magnetron sputtering source; 4, vacuum generating device; 401, vacuum pumping line; 5, vacuum plug valve; 6, vacuum transition chamber; 7, sealing tube; 8, movable tube; 9, operating tube; 10, annular ear plate; 11, KF clamp; 12, extrusion ring; 13, transition tube; 14, sealing sleeve; 15, O-ring; 16, vacuum welding bellows; 17, vacuum pressure sensor; 18, ceramic insulation Hot column; 19. Connecting part; 20. Annular gas homogenizing chamber; 21. Gas supply pipe; 22. Pressure chamber; 23. Ventilation pipe; 24. Flow control valve; 25. Piston plate; 26. Push rod; 27. Universal rotating frame; 28. Spherical connecting block; 29. Thermocouple element; 30. Ceramic heating rod; 31. Gas transmission equipment; 32. Gas transmission pipeline; 33. Target flange; 34. Rotating rod; 35. Rotating baffle; 36. Slide; 37. Slide plate; 38. Terminal. DETAILED DESCRIPTION
[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.
[0028] See also Figure 1-4 In this embodiment, a pulsed magnetron sputtering coating device includes a vacuum chamber 1, within which is disposed a substrate 2 and a magnetron sputtering source 3, preferably three magnetron sputtering sources 3. A vacuum generator 4 is externally connected to the vacuum chamber 1, which is also connected to several gas pipes for transporting gas. After the substrate 2 and magnetron sputtering source 3 are installed in the vacuum chamber 1, the vacuum generator 4 evacuates the vacuum chamber 1 to a vacuum state, and argon gas is introduced into the vacuum chamber 1 through the gas pipes to create a low-pressure environment. A high voltage is then applied between the target and the substrate, ionizing the argon gas to form a plasma of Ar⁺ ions and electrons. The Ar⁺ ions bombard the target under the action of the electric field, causing the target atoms to detach from the surface and deposit on the substrate, thus completing the sputtering process.
[0029] When a conventional sputtering coating device performs continuous sputtering coating, since the vacuum chamber 1 usually operates in a vacuum or low-pressure state, if the substrate needs to be replaced at this time, the vacuum chamber 1 needs to be restored to normal pressure first, and then the substrate needs to be taken out. After replacing the new substrate, the vacuum chamber 1 needs to be vacuumed again, which reduces the efficiency of continuous production. However, the present sputtering coating device can take out and replace the substrate without losing the vacuum state, thereby effectively improving production efficiency.
[0030] As for how to implement the above operation, as a preferred embodiment, Figure 1-3 As shown, the left end of the vacuum chamber 1 is connected to a vacuum plug valve 5, and the left side of the vacuum chamber 1 is connected to a vacuum transition chamber 6 through the vacuum plug valve 5. The left end of the vacuum transition chamber 6 is connected to a sealing tube 7, and the left end of the sealing tube 7 is detachably connected to a movable tube 8. The interior of the movable tube 8 is provided with an operating tube 9 that passes through the vacuum transition chamber 6 and extends into the vacuum chamber 1. The substrate 2 is arranged at the front end of the operating tube 9. The opposite ends of the movable tube 8 and the sealing tube 7 are both formed with an annular ear plate 10 outwardly. A pair of annular ears The plates 10 are connected by KF clamps 11, and an extrusion ring 12 with a semicircular cross-section is fixed to the opposite surfaces of a pair of annular ear plates 10. A transition pipe 13 is slidably connected to the outer periphery of the operating tube 9. A sealing sleeve 14 is sleeved on the outer periphery of the transition pipe 13. The two sides of the sealing sleeve 14 are respectively fixed to the movable tube 8 and the sealing tube 7 by strong glue. An O-ring 15 is sleeved on the outer periphery of the sealing sleeve 14, and a vacuum welded telescopic bellows 16 is also sealed between the right end face of the transition pipe 13 and the outer periphery of the right end of the operating tube 9.
[0031] The shell of the vacuum generating device 4 is connected to two vacuum pumping pipelines 401, which are respectively connected to the vacuum chamber 1 and the vacuum transition chamber 6, and the material can be a conventional stainless steel metal pipe or steel pipe. Each vacuum pumping pipeline 401 is provided with a control valve and a flow meter, which can independently control the vacuum pumping of the vacuum chamber 1 or the vacuum transition chamber 6. The inner walls of the vacuum chamber 1 and the vacuum transition chamber 6 are both provided with vacuum pressure sensors 17 for detecting the internal vacuum levels of the two.
[0032] How is the vacuum gate valve 5 connected to the vacuum transition chamber 6? Figure 1 As shown, a first flange is welded and fixed to the left side of the vacuum chamber 1, and the first flange is sealed and fixed to the flange on the right side of the vacuum plug-in valve 5 through an O-ring. A second flange is welded and fixed to the right side of the vacuum transition chamber 6, and the second flange is sealed and fixed to the flange on the left side of the vacuum plug-in valve 5 through an O-ring. The vacuum transition chamber 6 and the sealing tube 7 are connected by a third flange and sealed by an O-ring. The vacuum chamber 1, the vacuum plug-in valve 5, the vacuum transition chamber 6 and the sealing tube 7 are sealed and fixed by the first flange, the second flange, the third flange and the O-ring.
[0033] A fourth flange is fixed to the outer periphery of the right end of the operating tube 9, and the fourth flange is sealed and fixed to the flange on the right side of the vacuum welded telescopic bellows 16 through an O-ring. A fifth flange is fixed to the right end of the transition tube 13, and the fifth flange is sealed and fixed to the flange on the left side of the vacuum welded telescopic bellows 16 through an O-ring. The right end of the transition tube 13 can be connected to the right end of the operating tube 9 through the vacuum welded telescopic bellows 16 to achieve a sealing effect. At the same time, when the transition tube 13 is restricted, the operating tube 9 can continue to move left and right.
[0034] In order to make the operating tube 9 more stable when moving, a plurality of annularly distributed slide grooves 36 are provided on the outside of the operating tube 9, and a slide plate 37 slidably connected to the slide grooves 36 is fixed to the inner wall of the transition tube 13. Under the guiding action of the slide plate 37 and the slide grooves 36, the transition tube 13 can be more stable when moving.
[0035] During use, after the KF clamp 11 connects the movable tube 8 and the sealing tube 7, a pair of extrusion rings 12 move relative to each other to squeeze the O-ring 15, so that the sealing sleeve 14 is tightly sleeved on the outer periphery of the transition tube 13. Since the vacuum plug valve 5 is in the open state, the vacuum transition chamber 6 and the vacuum chamber 1 are both in a vacuum environment and the pressures of the two are equal. If the substrate 2 needs to be replaced, the operating tube 9 can be pulled. Since the sealing sleeve 14 is always tightly sleeved on the outer periphery of the transition tube 13, the transition tube 13 cannot move, and the operating tube 9 can slide to the left in the transition tube 13. At this time, the vacuum welding telescopic bellows 16 can be contracted, and the operating tube 9 can drive the substrate 2 to be withdrawn from the vacuum chamber 1 and into the vacuum transition chamber 6. The vacuum chamber 1 and the vacuum transition chamber 6 are still in a vacuum-sealed state at this time. Then the vacuum plug valve 5 can be closed, and the vacuum generating device 4 is used. After the vacuum transition chamber 6 is restored to normal pressure, the KF clamp 11 is removed, the extrusion ring 12 no longer squeezes the O-ring 15, and the sealing sleeve 14 no longer presses the transition tube 13, the operating tube 9 can be used to drive the transition tube 13 together with the substrate 2 to be taken out of the vacuum transition chamber 6. After replacing the substrate 2, the substrate 2 is first inserted into the vacuum transition chamber 6 through the operating tube 9, and the KF clamp 11 is used to reconnect the movable tube 8 and the sealing tube 7 to achieve the sealing of the vacuum transition chamber 6. The vacuum degree pressure sensor 17 is used to detect the vacuum degree of the vacuum transition chamber 6, and then the vacuum degree of the vacuum transition chamber 6 is adjusted to be consistent with the vacuum degree of the vacuum chamber 1 using the vacuum pumping pipeline 401. Finally, the vacuum plug valve 5 is opened, and the substrate 2 is pushed to the working point of the vacuum chamber 1 through the operating tube 9, and the coating work can be continued.
[0036] In addition, since the existing sputtering coating device usually corresponds to one substrate 2 with multiple target materials, and the targets are usually distributed in a ring shape in the vacuum chamber 1, and the center of the circle corresponds to the center of the substrate 2, therefore, when the substrate 2 is sputtered by a single target material, due to a certain angle deviation between the target material and the substrate 2, the uniformity of the formed thin film is poor. Therefore, in this embodiment, the target material and the substrate 2 are both set to be adjustable, and the substrate 2 can be aligned parallel to the single target material so that the centers of the two are located in the same plane. At the same time, the substrate 2 can be evenly swung in the circumferential direction during sputtering, so that the sputtered particles are evenly splashed onto the substrate, thereby improving the uniformity of the film.
[0037] As for how the operating tube 9 is connected to the substrate 2, so that the angle of the substrate 2 at the right end of the operating tube 9 can be adjusted, as a preferred embodiment, Figure 2 、 4 As shown, the right end of the operating tube 9 is connected to a connecting portion 19 through a ceramic insulating and heat-insulating column 18. An annular gas-uniform chamber 20 is fixed to the periphery of the connecting portion 19. The periphery of the annular gas-uniform chamber 20 is connected to an air supply pipe 21. The inner wall of the annular gas-uniform chamber 20 is fixed with a plurality of pressure chambers 22 distributed in an annular array. A closed space is formed between the pressure chamber 22 and the inner wall of the annular gas-uniform chamber 20. One side of the pressure chamber 22 is connected to a vent pipe 23. A flow control valve 24 is provided on the vent pipe 23. A piston plate 25 is provided in the pressure chamber 22. A push rod 26 is fixed on one side of the piston plate 25, which passes through the pressure chamber 22 and extends to the outside of the annular gas uniforming chamber 20. The push rod 26 and the corresponding penetrating part of the annular gas uniforming chamber 20 are sealed by a linear bearing. A universal rotating frame 27 is fixed to the end of the connecting part 19, and a spherical connecting block 28 is rotatably arranged in the universal rotating frame 27. The substrate 2 is mounted on the spherical connecting block 28. The two ends of the substrate 2 and its mask are respectively fixed to the spherical connecting block 28 by pressing sheets, and the pressing sheet is fixed to the spherical connecting block 28 by bolts.
[0038] Air is supplied to the inside of the annular uniform air chamber 20 through the air supply pipe 21, and the flow control valve 24 on the vent pipe 23 can be used to control the gas volume entering the corresponding pressure chamber 22, so that the ejection distance of the ejector rod 26 is different. When the ejector rod 26 on one side is ejected, the ejector rod 26 on the other side can be retracted, so that the substrate 2 can swing in a circular motion. In addition, the adjustment method of the magnetron sputtering source 3 is the same as that of the substrate 2, so that the substrate 2 can be made parallel to the corresponding magnetron sputtering source 3, and the substrate 2 can swing evenly in the circumferential direction corresponding to the magnetron sputtering source 3, so that the splashing is more uniform.
[0039] A thermocouple element 29 and a ceramic heating rod 30 may also be embedded in the spherical connecting block 28. The ceramic heating rod 30 is used to heat the spherical connecting block 28, and the thermocouple element 29 is used to measure the temperature of the spherical connecting block 28, so as to achieve the purpose of changing the surface morphology, resistivity and other properties of the film-forming sample by controlling the temperature change of the substrate 2.
[0040] The vacuum chamber 1 is also connected to an external gas delivery device 31. The outer shell of the gas delivery device 31 is connected to four gas delivery pipelines 32 through a main pipe. There is a main valve on the main pipe. Each gas delivery pipeline 32 is provided with a control valve and a flow meter. The four gas delivery pipelines 32 are respectively connected to the gas supply pipe 21 on the annular gas uniforming bin 20 where the substrate 2 is located and the gas supply pipe 21 on the annular gas uniforming bin 20 where the three magnetron sputtering sources 3 are located, for realizing the gas supply of the annular gas uniforming bin 20. The gas delivery pipeline 32 runs through the vacuum transition chamber 6 or The penetration point of the vacuum chamber 1 is fixed to the vacuum transition chamber 6 or the vacuum chamber 1 by an O-ring sealing method. The part of the gas pipeline 32 located outside the vacuum transition chamber 6 and the vacuum chamber 1 is a conventional stainless steel metal pipe or copper pipe, and the part of the gas pipeline 32 located inside the vacuum transition chamber 6 and the vacuum chamber 1 is a polyimide high-temperature resistant hose. The external stainless steel metal pipe or copper pipe penetrates into the vacuum transition chamber 6 or the vacuum chamber 1 and is connected to the polyimide high-temperature resistant hose through a vacuum joint.
[0041] The ceramic insulating and heat-insulating column 18 is inserted into the front end of the operating tube 9 and is transitionally matched with the operating tube 9. The right end of the ceramic insulating and heat-insulating column 18 is provided with a number of rectangular grooves distributed in a ring shape, and a number of studs corresponding to the rectangular grooves are fixed to the outside of the connecting part 19. By passing the studs into the rectangular grooves until they contact the inner wall, the nuts can be tightened on the outer ends of the studs, thereby tightly connecting the ceramic insulating and heat-insulating column 18 and the connecting part 19. The ceramic insulating and heat-insulating column 18 can be used for insulation and heat insulation.
[0042] Since the universal rotating frame 27, the spherical connecting block 28, the connecting part 19 and the ceramic insulating and heat-insulating column 18 all have corresponding axial through holes for passing the wires, several wires are led out from the thermocouple element 29, the ceramic heating rod 30, and multiple flow control valves 24, and pass through the multiple axial through holes in turn and extend to the rear end of the operating tube 9. The rear end of the operating tube 9 is provided with a terminal 38, and the terminal 38 is connected to the wires of the above-mentioned control elements. The rear end of the operating tube 9 is sealed with strong glue, and the wire penetration points of the flow control valve 24 are all sealed to avoid gas leakage. The conventional sealing setting can be a strong glue seal. Sealing methods with the same technical effects are all within the protection scope of this application.
[0043] It should be noted that the wires and the terminal blocks do not need to be directly connected, but can be connected through wires and quick-connect terminals in the middle, which facilitates subsequent disassembly and replacement.
[0044] Finally, how to install the magnetron sputtering source 3? A target flange 33 is fixed to the right end of the vacuum chamber 1. The magnetron sputtering source 3 is sealed and installed in the vacuum chamber 1 through the target flange 33. The right end of the magnetron sputtering source 3 is connected to a magnetron sputtering target power supply. Multiple magnetron sputtering target power supplies correspond one-to-one to multiple magnetron sputtering sources 3. Each magnetron sputtering source 3 is electrically connected to its corresponding magnetron sputtering target power supply. The magnetron sputtering target power supply can be a DC power supply, an RF power supply or a DC pulse power supply.
[0045] A rotating rod 34 extending into the vacuum chamber 1 is also provided within the target flange 33. The rotating rod 34 passes through the center of the target flange 33 and is sealed with an O-ring. A fan-shaped rotating baffle 35 is fixed to the end of the rotating rod 34 to block a sputtering source or to block the sputtering source before pre-sputtering. By rotating the rotating rod 34, the rotating baffle 35 located within the vacuum chamber 1 can be controlled to cover different magnetron sputtering sources 3. When pre-sputtering is being performed or the experiment is in the early stages of arcing of the magnetron sputtering source 3, it is undesirable to deposit particles on the substrate 2. Therefore, it is necessary to cover the operating magnetron sputtering source 3 to ensure that particles sputtered from the magnetron sputtering source 3 do not deposit on the substrate 2 and thus contaminate the substrate 2. After the pre-sputtering is completed or the operating state of the magnetron sputtering source 3 is stable, the rotating baffle 35 is rotated to cover the non-operating magnetron sputtering source 3, allowing the sputtered particles to deposit on the substrate 2.
[0046] In summary, in the present invention, when the substrate 2 needs to be replaced, the operating tube 9 can be pulled. Since the sealing sleeve 14 is always tightly sleeved on the outer periphery of the transition tube 13, the transition tube 13 cannot move, and the vacuum chamber 1 and the vacuum transition chamber 6 are still in a sealed state. The operating tube 9 slides to the left in the transition tube 13. At this time, the vacuum welding telescopic bellows 16 can be contracted, and the operating tube 9 can drive the substrate 2 to be withdrawn from the vacuum chamber 1 and into the vacuum transition chamber 6. Then the vacuum plug valve 5 can be closed, and the vacuum chamber 1 can always be a vacuum environment without being affected by the pressure. After the vacuum transition chamber 6 returns to normal pressure, the KF clamp 11 can be removed, and the extrusion ring 12 no longer squeezes the O-ring 15, and the seal is restored. The sealing ring no longer presses the transition tube 13, so the operating tube 9 can be driven to take the transition tube 13 out of the vacuum transition chamber 6 together with the substrate 2. After replacing the substrate 2, first insert the substrate 2 into the vacuum transition chamber 6 through the operating tube 9, and re-use the KF clamp 11 to connect the movable tube 8 and the sealing tube 7 to achieve the sealing of the vacuum transition chamber 6. Then, use the vacuum pressure sensor 17 to detect the vacuum degree of the vacuum transition chamber 6, and then use the vacuum pipeline 401 to adjust the vacuum degree of the vacuum transition chamber 6 to be consistent with the vacuum degree of the vacuum chamber 1. Then open the vacuum plug valve 5, and push the substrate 2 to the working point of the vacuum chamber 1 through the operating tube 9 to continue the coating work.
[0047] When it is necessary to adjust the substrate 2 and the magnetron sputtering source 3, air can be supplied to the corresponding annular uniform air chamber 20 through the air supply pipe 21, and the flow control valve 24 on the vent pipe 23 can be used to control the gas volume entering the corresponding pressure chamber 22, so that the ejection distance of the push rod 26 is different. When the push rod 26 on one side is ejected, the push rod 26 on the other side can be retracted, so that the substrate 2 can swing in a circular manner. In addition, the installation method of the magnetron sputtering source 3 is the same as that of the substrate 2, so that the substrate 2 can be parallel to the corresponding magnetron sputtering source 3, and the substrate 2 can swing evenly in the circumferential direction corresponding to the magnetron sputtering source 3, so that the splashing is more uniform.
[0048] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.
[0049] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.
Claims
1. A pulsed magnetron sputtering coating device, characterized in that: include: A vacuum chamber (1), wherein a substrate (2) and a magnetron sputtering source (3) are arranged in the vacuum chamber (1), and the vacuum chamber (1) is externally connected to a vacuum generating device (4); A vacuum plug valve (5) is connected to the left end of the vacuum chamber (1); the left side of the vacuum chamber (1) is connected to a vacuum transition chamber (6) via the vacuum plug valve (5); the left end of the vacuum transition chamber (6) is connected to a sealing tube (7); the left end of the sealing tube (7) is detachably connected to a movable tube (8); an operating tube (9) disposed inside the movable tube (8), passing through the vacuum transition chamber (6) and extending into the vacuum chamber (1), wherein the substrate (2) is disposed at a front end of the operating tube (9); The opposite ends of the movable tube (8) and the sealing tube (7) are both formed with annular ear plates (10) facing outwards, and a pair of annular ear plates (10) are connected by a KF clamp (11). The opposite surfaces of the pair of annular ear plates (10) are fixed with an extrusion ring (12) with a semicircular cross-section. The outer periphery of the operating tube (9) is slidably connected with a transition tube (13). The outer periphery of the transition tube (13) is provided with a sealing sleeve (14). The two sides of the sealing sleeve (14) are respectively fixed to the movable tube (8) and the sealing tube (7). The outer periphery of the sealing sleeve (14) is provided with an O-ring (15). A vacuum welded telescopic bellows (16) is also sealed between the right end surface of the transition tube (13) and the outer periphery of the right end of the operating tube (9).
2. The pulsed magnetron sputtering coating device according to claim 1, characterized in that: The housing of the vacuum generating device (4) is connected to two vacuum extraction pipelines (401), which are respectively connected to the vacuum chamber (1) and the vacuum transition chamber (6). The inner walls of the vacuum chamber (1) and the vacuum transition chamber (6) are both provided with vacuum pressure sensors (17).
3. The pulsed magnetron sputtering coating device according to claim 1, characterized in that: A plurality of annularly distributed slide grooves (36) are provided on the outer side of the operating tube (9), and a slide plate (37) slidably connected to the slide grooves (36) is fixed to the inner peripheral wall of the transition tube (13).
4. The pulsed magnetron sputtering coating device according to claim 1, characterized in that: The right end of the operating tube (9) is connected to a connecting portion (19) through a ceramic insulating and heat-insulating column (18), an annular gas-uniform chamber (20) is fixed to the outer periphery of the connecting portion (19), and an air supply pipe (21) is connected to the outer periphery of the annular gas-uniform chamber (20), and a plurality of pressure chambers (22) distributed in an annular array are fixed to the inner wall of the annular gas-uniform chamber (20), one side of the pressure chamber (22) is connected to a vent pipe (23), and a flow control valve (24) is provided on the vent pipe (23), a piston plate (25) is provided in the pressure chamber (22), and a push rod (26) is fixed on one side of the piston plate (25) that passes through the pressure chamber (22) and extends to the outside of the annular gas-uniform chamber (20), and a universal rotating frame (27) is fixed to the end of the connecting portion (19), a spherical connecting block (28) is rotatably provided in the universal rotating frame (27), and the substrate (2) is mounted on the end of the spherical connecting block (28).
5. The pulsed magnetron sputtering coating device according to claim 4, characterized in that: The ceramic insulating and heat-insulating column (18) is plugged into the front end of the operating tube (9) and is transitionally matched with the operating tube (9). The right end of the ceramic insulating and heat-insulating column (18) is connected to the connecting portion (19) via a bolt.
6. The pulsed magnetron sputtering coating device according to claim 4, characterized in that: The spherical connecting block (28) is embedded with a thermocouple element (29) and a ceramic heating rod (30).
7. The pulsed magnetron sputtering coating device according to claim 1, characterized in that: The vacuum chamber (1) is also externally connected to a gas delivery device (31), and the outer shell of the gas delivery device (31) is connected to four gas delivery pipelines (32), and the four gas delivery pipelines (32) are respectively connected to the gas supply pipe (21) on the annular gas homogenizing chamber (20) where the substrate (2) is located and the gas supply pipe (21) on the annular gas homogenizing chamber (20) where the three magnetron sputtering sources (3) are located.
8. The pulsed magnetron sputtering coating device according to claim 1, characterized in that: A target flange (33) is fixed to the right end of the vacuum chamber (1), and the magnetron sputtering source (3) is sealed and installed in the vacuum chamber (1) through the target flange (33).
9. The pulsed magnetron sputtering coating device according to claim 8, characterized in that: A rotating rod (34) extending into the vacuum chamber (1) is also provided through the target flange (33), and a fan-shaped rotating baffle (35) is fixed to the end of the rotating rod (34).
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