Film thickness measuring device and film thickness measuring method

Abstract

The invention relates to a thin film thickness measuring device and a thin film thickness measuring method. The thin film thickness measuring apparatus includes: an electron beam generator that irradiates an electron beam onto a target object including a target thin film and a lower film below the target thin film; a detector that detects the X-rays emitted from the target object; and a calculation unit that derives the thickness of the target film from the detected intensity of the X-rays and includes: an X-ray intensity calculator that measures the X-ray intensity of a body sample of the target film or the lower film, measures the X-ray intensity of the target film having a known thickness or the lower film below the target film having the known thickness, and calculates the thickness of the target film; and measuring a third X-ray intensity of the target film having an unknown thickness or a lower film below the target film having an unknown thickness; a calibration ratio calculator; a calibration data storage; and a thickness calculator.

Description

[0001] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2024-0009659, filed on January 22, 2024, the content of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a thin film thickness measuring device and a thin film thickness measuring method. Background Art

[0003] With the progress of the information society, the requirements for display devices for displaying images are increasing in various ways. The display device may be a display device such as a liquid crystal display, a field emission display, and a light-emitting display. The light-emitting display may include an organic light-emitting display device including an organic light-emitting diode as a light-emitting element or an inorganic light-emitting display device including an inorganic light-emitting diode as a light-emitting element.

[0004] The display device includes various conductive films and non-conductive films, and the quality of the display device may vary depending on the thickness of the film. Therefore, accurately measuring the thickness of the film is an important factor. Summary of the Invention

[0005] The present disclosure features a thin film thickness measuring device and a thin film thickness measuring method that can measure the thickness of a thin film in a non-destructive and non-contact manner without damaging the target object.

[0006] The present disclosure also features a thin film thickness measuring device and a thin film thickness measuring method having improved process yield and process efficiency.

[0007] However, the features of the present disclosure are not limited to the features described herein. The above and other features of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0008] In an embodiment of the present disclosure, a thin film thickness measurement device is provided, including: an electron beam generator that irradiates an electron beam onto a target object including a target thin film and a lower film disposed below the target thin film; a detector that detects X-rays emitted from the target object by the electron beam; and a calculation unit that derives the thickness of the target thin film from the intensity of the X-rays detected by the detector. The calculation unit includes: an X-ray intensity calculator that measures a first X-ray intensity of a bulk sample of the target thin film or a bulk sample of the lower film, measures a second X-ray intensity of a plurality of target thin films having known thicknesses or a plurality of lower films disposed below a plurality of target thin films having known thicknesses, and measures a third X-ray intensity of a target thin film having an unknown thickness or a lower film disposed below a target thin film having an unknown thickness; a calibration ratio calculator that calculates a calibration ratio that is a ratio of the second X-ray intensity to the first X-ray intensity; a calibration data storage that generates a calibration graph representing the calibration ratio with respect to the thicknesses of the plurality of target thin films; and a thickness calculator that derives the thin film thickness corresponding to the third X-ray intensity from the calibration graph.

[0009] In an embodiment, the first X-ray intensity may be the X-ray intensity of a bulk sample of the target thin film, and the second X-ray intensity may be the X-ray intensities of a plurality of target thin films having known thicknesses.

[0010] In an embodiment, the first X-ray intensity may be the X-ray intensity of a bulk sample of the lower film, and the second X-ray intensity may be the X-ray intensities of a plurality of lower films disposed below a plurality of target thin films having known thicknesses.

[0011] In an embodiment, the calibration ratio when the first X-ray intensity is the X-ray intensity of a bulk sample of the target thin film and the second X-ray intensity is the X-ray intensities of a plurality of target thin films having known thicknesses is a first calibration ratio, and the calibration ratio when the first X-ray intensity is the X-ray intensity of a bulk sample of the lower film and the second X-ray intensity is the X-ray intensities of a plurality of lower films disposed below a plurality of target thin films having known thicknesses is a second calibration ratio. The first calibration ratio and the second calibration ratio may each be less than or equal to 1, and the sum of the first calibration ratio and the second calibration ratio measured from a plurality of target thin films having known thicknesses and the same thickness may be 1.

[0012] In an embodiment, the calibration graph may have a curve shape.

[0013] In an embodiment, the calibration graph having a curve shape may partially have a linear portion, and within the linear portion, the calibration graph having a curve shape may have an error range of ±5% compared to a calibration graph having a straight line shape.

[0014] In an embodiment, the calibration graph having a straight line shape may be a graph obtained by connecting two end points of the linear portion with a straight line.

[0015] In an embodiment, the linear portion may be a range corresponding to 10% to 90% of the calibration ratio.

[0016] In an embodiment, the thickness calculator may derive the thickness of the target film using a calibration graph having a linear shape within the linear portion.

[0017] In an embodiment, the thicknesses of a plurality of target films having known thicknesses may be less than or equal to the thickness of the bulk sample of the target film.

[0018] In an embodiment, the thickness of the bulk sample of the target film and the thickness of the bulk sample of the lower film may be greater than or equal to the analyzable depth of the electron beam generator.

[0019] In an embodiment, the target film may include a plurality of layers, and the plurality of layers may each include at least one different element.

[0020] In an embodiment, the target film may include at least one of a metal layer, an alloy layer, and an oxide conductive layer of a single element.

[0021] In an embodiment, the thin film thickness measuring device may further include a stage on which a target object may be placed. The target object and the stage may not be electrically connected.

[0022] In an embodiment, the target object may be a display device that is being manufactured or has been manufactured. The display device may include at least one conductive film and a non-conductive film that insulates the at least one conductive film from the outside or other layers.

[0023] In an embodiment, the target film may be a conductive film, and the lower film may be a non-conductive film.

[0024] In an embodiment of the present disclosure, there is provided a thin film thickness measuring device including: an electron beam generator that irradiates an electron beam onto a target object including a target film and a lower film provided below the target film; a detector that detects X-rays emitted from the target object by the electron beam; and a calculation unit that derives the thickness of the target film from the intensity of the X-rays detected by the detector. The calculation unit includes: an X-ray intensity calculator that measures a first X-ray intensity of a plurality of target films having known thicknesses, measures a second X-ray intensity of a plurality of lower films provided below the plurality of target films having known thicknesses, and measures a third X-ray intensity of a target film having an unknown thickness; a calibration ratio calculator that calculates a calibration ratio that is a ratio of the first X-ray intensity to the second X-ray intensity or a ratio of the second X-ray intensity to the first X-ray intensity; a calibration data storage that generates a calibration graph representing the calibration ratio with respect to the thicknesses of the plurality of target films; and a thickness calculator that derives the film thickness corresponding to the third X-ray intensity from the calibration graph.

[0025] In an embodiment, the calibration graph may have a linear shape.

[0026] In an embodiment of the present disclosure, a method for measuring the thickness of a thin film is provided, including: measuring a first X-ray intensity of a bulk sample of a target thin film or a bulk sample of a lower film disposed under the target thin film, measuring a second X-ray intensity of a plurality of target thin films having known thicknesses or a plurality of lower films disposed under the plurality of target thin films having known thicknesses; calculating a calibration ratio that is a ratio of the second X-ray intensity to the first X-ray intensity to generate a calibration graph representing the calibration ratio with respect to the thickness of the plurality of target thin films; and measuring a third X-ray intensity of a target thin film having an unknown thickness or a lower film disposed under the target thin film having an unknown thickness, to derive from the calibration graph a thin film thickness corresponding to the third X-ray intensity.

[0027] In an embodiment of the present disclosure, a method for measuring the thickness of a thin film is provided, including: measuring a first X-ray intensity of a plurality of target thin films having known thicknesses, measuring a second X-ray intensity of a plurality of lower films disposed under the plurality of target thin films having known thicknesses, calculating a calibration ratio that is a ratio of the first X-ray intensity to the second X-ray intensity or a ratio of the second X-ray intensity to the first X-ray intensity to generate a calibration graph representing the calibration ratio with respect to the thickness of the plurality of target thin films, and measuring a third X-ray intensity of a target thin film having an unknown thickness to derive from the calibration graph a thin film thickness corresponding to the third X-ray intensity.

[0028] In the thin film thickness measuring device and the thin film thickness measuring method according to the present disclosure, the thickness of the thin film can be measured in a non-destructive and non-contact manner without damaging the target object.

[0029] In the thin film thickness measuring device and the thin film thickness measuring method according to the present disclosure, the process yield and process efficiency can be improved.

[0030] However, the effects in the embodiments of the present disclosure are not limited to the effects exemplified above, and various other effects are included herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] By describing in detail the embodiments of the present disclosure with reference to the accompanying drawings, the above and other advantages and features of the present disclosure will become more apparent, in which:

[0032] Figure 1 is a plan view showing an embodiment of a display device;

[0033] Figure 2 is along Figure 1 sectional view taken along line X1-X1';

[0034] Figure 3A is Figure 2 an enlarged view of region A of;

[0035] Figure 3B is a cross-sectional view of an embodiment of a diagrammed circuit layer;

[0036] Figure 4 is a cross-sectional view of an embodiment showing a thin film thickness measuring device;

[0037] Figure 5 is a block diagram showing an embodiment of a diagrammed calculation unit and the calculation process of the calculation unit;

[0038] Figure 6 is a diagram showing an embodiment of an EDX spectrum;

[0039] Figure 7 is Figure 6 an enlarged view of region B of;

[0040] Figure 8 is a cross-sectional view of an embodiment showing a method for measuring the X-ray intensity of a measurement body sample;

[0041] Figure 9 is a cross-sectional view of an embodiment of an emission-type method of a thin film thickness measurement method;

[0042] Figure 10 is a cross-sectional view of an embodiment of an absorption-type method of a thin film thickness measurement method;

[0043] Figure 11 is a schematic diagram showing an embodiment of a calibration curve;

[0044] Figure 12 is a diagram showing an embodiment of a calibration curve and a calibration straight line derived by an emission-type method of a thin film thickness measurement method for each acceleration voltage of a thin film thickness measuring device;

[0045] Figure 13 is a diagram showing an embodiment of a calibration curve and a calibration straight line derived by an absorption-type method of a thin film thickness measurement method for each acceleration voltage of a thin film thickness measuring device;

[0046] Figure 14 is a cross-sectional view of an embodiment of an element ratio-type method of a thin film thickness measurement method;

[0047] Figure 15 is a diagram showing a calibration straight line derived by an embodiment of an element ratio-type method of a thin film thickness measurement method;

[0048] Figure 16 is a flowchart of an embodiment of an emission-type method of a thin film thickness measurement method;

[0049] Figure 17It is a flowchart of an embodiment of the absorption type method of the thin film thickness measurement method shown;

[0050] Figure 18 It is a flowchart of an embodiment of the elemental ratio type method of the thin film thickness measurement method shown;

[0051] Figure 19 It shows an X-ray intensity measurement chart according to a comparative example;

[0052] Figure 20 It shows a calibration chart measured by an embodiment of the emission type method of the thin film thickness measurement method; and

[0053] Figure 21 It shows a calibration chart measured by an embodiment of the elemental ratio type method of the thin film thickness measurement method. Detailed Description

[0054] Hereinafter, embodiments of the present disclosure will be described more fully with reference to the accompanying drawings in which preferred embodiments of the present invention are shown. However, the present invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0055] It will also be understood that when a layer is referred to as being "on" another layer or substrate, the layer can be directly on the other layer or substrate, or an intervening layer may also be present. Throughout the specification, the same reference numerals indicate the same components.

[0056] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, a first element, component, region, layer, or part discussed below may be referred to as a second element, component, region, layer, or part without departing from the teachings herein.

[0057] The terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, including "at least one", unless the context clearly indicates otherwise. "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It will be further understood that when used in this specification, the terms "comprises" or "comprising" specify the presence of the stated features, regions, wholes, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components, and / or groups thereof.

[0058] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another as illustrated in the figures. It will be understood that the relative terms are intended to cover different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is flipped, an element described as on the "lower" side of another element will then be oriented on the "upper" side of the other element. Thus, depending on the specific orientation of the figure, the exemplary term "lower" can cover both the "lower" and "upper" orientations. Similarly, if the device in one of the figures is flipped, an element described as "beneath" or "under" another element will then be oriented "above" the other element. Thus, the exemplary terms "beneath" or "under" can cover both the "above" and "below" orientations.

[0059] Taking into account the measurements under discussion and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system), "about" or "approximate" as used herein includes the stated value and means within an acceptable deviation range of the specific value determined by a person of ordinary skill in the art. For example, a term such as "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0060] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by a person of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this disclosure, and will not be interpreted in an idealized or overly formal sense, unless expressly so defined herein.

[0061] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings.

[0062] Figure 1It is a plan view of an embodiment of a display device.

[0063] Reference Figure 1 , the display device DD may refer to any electronic device that provides a display screen. The display device DD may display moving images or still images. In an embodiment, the display device DD may include a television, a laptop computer, a monitor, a billboard, an Internet of Things device, a mobile phone, a smartphone, a tablet personal computer ("PC"), an electronic watch, a smart watch, a watch phone, a head-mounted (e.g., mounted) display, a mobile communication terminal, an electronic notebook, an e-book, a portable multimedia player ("PMP"), a navigation device, a gaming device, a digital camera, or a portable video camera, etc., that provide a display screen.

[0064] In an embodiment, the display device DD may have a quadrilateral shape, such as a rectangular shape, in a plan view. The display device DD may include two long sides extending in a first direction DR1 and two short sides extending in a second direction DR2 that intersects the first direction DR1. The corners where the long sides and short sides of the display device DD intersect may have right angles. However, the present disclosure is not limited thereto, and the corners may have curved surfaces. In another embodiment, the long sides may extend in the second direction DR2, and the short sides may extend in the first direction DR1. The planar shape of the display device DD is not limited to the illustrated shape, but may have a circular shape or other shapes.

[0065] In the illustrated drawings, the first direction DR1 and the second direction DR2 intersect each other as horizontal directions. In an embodiment, for example, the first direction DR1 and the second direction DR2 may be orthogonal to each other. In addition, for example, a third direction DR3 intersects the first direction DR1 and the second direction DR2 and may be a vertical direction. Unless otherwise defined, in the specification, the directions indicated by the arrows of the first to third directions DR1, DR2, and DR3 may also be referred to as one side, and the direction opposite to this side may also be referred to as the opposite side.

[0066] The display device DD may include a display panel that provides a display screen. In an embodiment, the display panel may include an inorganic light-emitting diode display panel, an organic light-emitting diode display panel, a quantum dot light-emitting display panel, a plasma display panel, and a field emission display panel. In the following description, the case where an organic light-emitting diode display panel is applied as the display panel will be illustrated, but the present disclosure is not limited thereto, and other display panels may be applied within the same technical spirit.

[0067] The display device DD may include a display area DA and a non-display area NDA provided around the display area DA. The display area DA is an area for displaying an image, and the non-display area NDA is an area for not displaying an image. The display area DA may also be referred to as an active area, and the non-display area NDA may also be referred to as a non-active area. The display area DA substantially occupies the center of the display device DD, and the non-display area NDA may be provided to surround the display area DA.

[0068] The display area DA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix. In a plan view, the shape of each pixel PX may be a quadrilateral shape, such as a rectangular shape or a square shape. However, the present disclosure is not limited thereto, and the shape of each pixel PX may be a rhombus shape in which each side is inclined with respect to one direction.

[0069] As described above, the non-display area NDA may be provided around the display area DA. The non-display area NDA may completely or partially surround the display area DA. The display area DA may have a quadrilateral shape, such as a rectangular shape, and the non-display area NDA may be provided adjacent to the four sides of the display area DA. The non-display area NDA may form a border of the display device DD. Wiring or a circuit driver included in the display device DD may be provided in the non-display area NDA, or an external device may be provided (e.g., mounted) in the non-display area NDA.

[0070] Figure 2 is a cross-sectional view taken along Figure 1 the line X1-X1’.

[0071] Referring to Figure 2 , the display device DD may include a display substrate 1, a color conversion substrate 2 facing the display substrate 1, a sealing portion 4 bonding the display substrate 1 to the color conversion substrate 2, and a filler 3 filled between the display substrate 1 and the color conversion substrate 2.

[0072] The display substrate 1 may include elements and circuits for displaying an image, for example, a pixel circuit including a switching element, a self-luminous element, and a pixel defining layer defining an emission area and a non-emission area. In an embodiment, the self-luminous element may include a light emitting diode (“LED”), and the LED includes at least one of an organic light emitting diode (“OLED”), a quantum dot LED, an inorganic micro LED, and an inorganic nano LED.

[0073] The color conversion substrate 2 may be provided on the display substrate 1 to face the display substrate 1. In an embodiment, the color conversion substrate 2 may include a color conversion pattern for converting the color of incident light. In an embodiment, the color conversion pattern may include at least one of a color filter and a wavelength conversion pattern.

[0074] The sealing portion 4 can be disposed between the display substrate 1 and the color conversion substrate 2 in the non-display area NDA. The sealing portion 4 can be disposed along the edges of the display substrate 1 and the color conversion substrate 2 in the non-display area NDA so as to surround the display area DA in a plan view. The display substrate 1 and the color conversion substrate 2 can be bonded to each other through the sealing portion 4.

[0075] The filler 3 can be disposed in the space surrounded by the sealing portion 4 between the display substrate 1 and the color conversion substrate 2. The filler 3 can fill the space between the display substrate 1 and the color conversion substrate 2. The filler 3 can include a material that can transmit light or be composed of a material that can transmit light. In some embodiments, the filler 3 can be omitted.

[0076] Figure 3A is Figure 2 an enlarged view of the region A.

[0077] Reference Figure 3A , the display device DD can include a display substrate 1, a color conversion substrate 2 facing the display substrate 1, and a filler 3 filled between the display substrate 1 and the color conversion substrate 2.

[0078] The display substrate 1 can include a first base substrate SUB1, a circuit layer CCL, a pixel defining layer PDL, a light-emitting element EMD, and a thin film encapsulation layer TFEL.

[0079] The first base substrate SUB1 can include a transparent material. In an embodiment, for example, the first base substrate SUB1 can include a transparent insulating material such as glass or quartz. The first base substrate SUB1 can be a rigid substrate. However, the first base substrate SUB1 is not limited thereto. The first base substrate SUB1 can include a plastic such as polyimide and can have a flexible property such that the first base substrate SUB1 can be twisted, bent, folded, or curled.

[0080] The circuit layer CCL can be disposed on the first base substrate SUB1. The circuit layer CCL can include various circuit wirings and transistors for driving the light-emitting element EMD. The circuit layer CCL can be disposed between the first base substrate SUB1 and the light-emitting element EMD. Reference will be made later to Figure 3B describe the circuit layer CCL.

[0081] The pixel defining layer PDL can be disposed on the pixel electrode PXE along the boundary of the pixel PX (reference Figure 1 ). The pixel defining layer PDL can define an opening exposing at least a part of the pixel electrode PXE. The emission region and the non-emission region can be distinguished by the pixel defining layer PDL and its opening.

[0082] The pixel defining layer PDL may include an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (“BCB”). The pixel defining layer PDL may include an inorganic material.

[0083] The light emitting element EMD may be disposed on the circuit layer CCL. Although Figure 3A one pixel PX is illustrated in [FIGURE] to show one light emitting element EMD, the display substrate 1 may include a plurality of light emitting elements EMD provided for each pixel PX.

[0084] The light emitting element EMD may include a pixel electrode PXE, a light emitting layer EML, and a common electrode CME.

[0085] The pixel electrode PXE may be disposed on the circuit layer CCL of the display substrate 1. The pixel electrode PXE may be the first electrode (e.g., an anode electrode) of the light emitting element EMD. The pixel electrode PXE may have a stacked structure formed by stacking a material layer having a relatively high work function such as indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (ZnO), and indium oxide (In2O3), and a reflective material layer such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or any combination thereof. The material layer having a relatively high work function may be disposed above the reflective material layer and disposed close to the light emitting layer EML. The pixel electrode PXE may have a multilayer structure such as ITO / Mg, ITO / MgF, ITO / Ag, and ITO / Ag / ITO, but is not limited thereto.

[0086] The light emitting layer EML may be disposed on the pixel electrode PXE exposed by the pixel defining layer PDL. In an embodiment where the display device DD is an organic light emitting display device, the light emitting layer EML may include an organic layer having an organic material. The organic layer may have an organic light emitting layer, and in some cases, may further have at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as an auxiliary layer for light emission. In another embodiment, when the display device DD is a micro LED display device or a nano LED display device, etc., the light emitting layer EML may include an inorganic material such as an inorganic semiconductor.

[0087] In an embodiment, the wavelength of light emitted from each light emitting layer EML may be the same regardless of the pixel PX. In an embodiment, for example, the light emitting layer EML of each pixel PX may emit blue light or ultraviolet light, and the color conversion substrate 2 to be described later may include a wavelength conversion layer WCL, thereby displaying the color of each pixel PX. In another embodiment, the wavelength of light emitted by each light emitting layer EML may be different for each pixel PX.

[0088] The common electrode CME may be disposed on the light emitting layer EML. The common electrode CME may be continuous across the pixels PX. The common electrode CME may be a full-surface electrode disposed throughout the entire surface across all pixels PX. The common electrode CME may be a second electrode (e.g., a cathode electrode) of the light emitting element EMD. The common electrode CME may include a material layer having a relatively low work function such as Li, Ca, Al, Mg, Ag, Pt, Pd, Ni, Au Nd, Ir, Cr, Ba, or a compound thereof (e.g., LiF or BaF2) or a combination (e.g., a combination of Ag and Mg) or a material having a multilayer structure such as LiF / Ca or LiF / Al. The common electrode CME may further include a transparent metal oxide layer disposed on the material layer having a relatively low work function.

[0089] The thin film encapsulation layer TFEL may be disposed on the common electrode CME. The thin film encapsulation layer TFEL may include a first inorganic layer TFE1, an organic layer TFE2, and a second inorganic layer TFE3.

[0090] The first inorganic layer TFE1 may be disposed on the light emitting element EMD. The first inorganic layer TFE1 may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y )wait.

[0091] The organic layer TFE2 may be disposed on the first inorganic layer TFE1. The organic layer TFE2 may include an organic insulating material selected from the group consisting of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene ("BCB").

[0092] The second inorganic layer TFE3 may be disposed on the organic layer TFE2. The second inorganic layer TFE3 may include the same material as the first inorganic layer TFE1 described above. In an embodiment, for example, the second inorganic layer TFE3 may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x Ny ) etc.

[0093] The color conversion substrate 2 can be arranged above the thin film encapsulation layer TFEL and facing the display substrate 1. Specifically, the color conversion substrate 2 can be arranged to face the display substrate 1, with the filler 3 interposed between the color conversion substrate 2 and the display substrate 1.

[0094] The color conversion substrate 2 can include a second base substrate SUB2, a light-shielding member BM, a color filter layer CFL, a first cover layer CAP1, a partition wall PTL, a wavelength conversion layer WCL, and a second cover layer CAP2.

[0095] The second base substrate SUB2 can include a transparent material. In an embodiment, for example, the second base substrate SUB2 can include a transparent insulating material such as glass or quartz. The second base substrate SUB2 can be a rigid substrate. However, the second base substrate SUB2 is not limited thereto. The second base substrate SUB2 can include a plastic such as polyimide and can have a flexible property such that the second base substrate SUB2 can be twisted, bent, folded, or curled.

[0096] The second base substrate SUB2 can be the same substrate as the first base substrate SUB1, but can have different materials, thicknesses, transmittances, etc. In an embodiment, for example, compared with the first base substrate SUB1, the second base substrate SUB2 can have a high transmittance. The second base substrate SUB2 can be thicker or thinner than the first base substrate SUB1.

[0097] The light-shielding member BM can be arranged along the boundary of the pixel PX on one surface of the second base substrate SUB2 facing the first base substrate SUB1. The light-shielding member BM can overlap with the pixel defining layer PDL of the display substrate 1. The light-shielding member BM can define an opening exposing one surface of the second base substrate SUB2 and can be formed in a lattice shape in a plan view, although not shown.

[0098] The light-shielding member BM can include an organic material. The light-shielding member BM can reduce color distortion caused by external light reflection by absorbing external light. In addition, the light-shielding member BM can be used to prevent the light emitted from the light-emitting layer EML from entering adjacent pixels PX.

[0099] The color filter layer CFL can be arranged on one surface of the second base substrate SUB2 on which the light-shielding member BM is arranged. The color filter layer CFL can be arranged on one surface of the second base substrate SUB2 exposed through the opening of the light-shielding member BM.

[0100] The color filter layer CFL may include colorants such as dyes or pigments that absorb wavelengths other than the corresponding color wavelengths. The color filter layer CFL may include colorants of different colors for each pixel PX. In an embodiment, for example, the color filter layer CFL may include a red colorant, a green colorant, and a blue colorant.

[0101] The first cover layer CAP1 may be disposed on the color filter layer CFL. The first cover layer CAP1 may prevent the penetration of impurities such as moisture or air. In addition, the first cover layer CAP1 may prevent the colorants of the color filter layer CFL from diffusing into other components.

[0102] The partition wall PTL may be disposed on the first cover layer CAP1. The partition wall PTL may be disposed to overlap with the light-shielding member BM. The partition wall PTL may define an opening that exposes the region in which the color filter layer CFL is disposed. The partition wall PTL may include a photosensitive organic material, but the present disclosure is not limited thereto. The partition wall PTL may further include a light-shielding material.

[0103] The wavelength conversion layer WCL may be disposed in the space exposed by the opening of the partition wall PTL. The wavelength conversion layer WCL may convert the wavelength of the light incident from the light-emitting layer EML. The wavelength conversion layer WCL may include a base resin BRS and a scatterer SCP and a wavelength conversion material WCP disposed in the base resin BRS.

[0104] The base resin BRS may include a light-transmitting organic material or be composed of a light-transmitting organic material. In an embodiment, for example, the base resin BRS may include an epoxy resin, an acrylic resin, a cardo resin, or an imide resin or be composed of an epoxy resin, an acrylic resin, a cardo resin, or an imide resin.

[0105] The wavelength conversion material WCP may be a material that converts colors. The wavelength conversion material WCP may be a quantum dot, a quantum rod, a phosphor, or the like. In an embodiment, the quantum dot may include a group-IV nanocrystal, a II-VI group compound nanocrystal, a III-V group compound nanocrystal, a IV-VI group nanocrystal, or any combination thereof.

[0106] In another embodiment, the wavelength conversion layer WCL may not include the wavelength conversion material WCP. When the wavelength conversion layer WCL does not include the wavelength conversion material WCP, the wavelength conversion layer WCL may be used as a light-transmitting layer for transmitting light.

[0107] The scatterer SCP can be metal oxide particles or organic particles. In an embodiment, the metal oxide may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), etc. In an embodiment, the material of the organic particles may include acrylic resin, urethane resin, etc.

[0108] The second cover layer CAP2 can be disposed on the wavelength conversion layer WCL and the partition wall PTL. The second cover layer CAP2 can be disposed on the entire surface of the color conversion substrate 2. The second cover layer CAP2 can prevent the penetration of impurities such as moisture or air. The second cover layer CAP2 can include an inorganic material or be composed of an inorganic material. The second cover layer CAP2 can include a material selected from the above materials of the first cover layer CAP1. The second cover layer CAP2 and the first cover layer CAP1 can include the same material as each other or be composed of the same material as each other, but are not limited thereto.

[0109] The filler 3 can be disposed between the display substrate 1 and the color conversion substrate 2. The filler 3 can fill the space between the display substrate 1 and the color conversion substrate 2 and can be used to bond the display substrate 1 and the color conversion substrate 2 to each other. The filler 3 can be disposed between the thin film encapsulation layer TFEL of the display substrate 1 and the second cover layer CAP2 of the color conversion substrate 2. The filler 3 can include a silicone-based organic material, an epoxy-based organic material, etc., or be composed of a silicone-based organic material, an epoxy-based organic material, etc., but is not limited thereto.

[0110] Figure 3B It is a cross-sectional view of an embodiment of the illustrated circuit layer.

[0111] Reference Figure 3B , the display substrate 1 can include a first base substrate SUB1, a circuit layer CCL, and a light-emitting element EMD.

[0112] Since the first base substrate SUB1 and the light-emitting element EMD have been described above with reference to Figure 3A , the description thereof will be omitted.

[0113] The circuit layer CCL can be disposed on the first base substrate SUB1. The circuit layer CCL (e.g., a thin film transistor layer) can include a lower conductive layer BML, a buffer layer BF, an active layer ACTL, a gate insulating layer GI, a gate conductive layer GML, a passivation layer PV, and a via layer VIA. The circuit layer CCL can include a first transistor ST1 and a capacitor C1.

[0114] The lower conductive layer BML may be disposed on the first substrate SUB1. The lower conductive layer BML may include a single layer or multiple layers containing any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or any alloy thereof, or consisting of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or any alloy thereof.

[0115] In an embodiment, the lower conductive layer BML may include a first voltage line VDL and a first capacitor electrode CPE1 of the capacitor C1.

[0116] The buffer layer BF may be disposed on the lower conductive layer BML. The buffer layer BF may include inorganic materials such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. In an alternative embodiment, the buffer layer BF may include a multilayer in which multiple layers selected from a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.

[0117] The active layer ACTL may be disposed on the buffer layer BF. The active layer ACTL may include polysilicon, single crystal silicon, low-temperature polysilicon, amorphous silicon, or an oxide semiconductor material.

[0118] In an embodiment, the active layer ACTL may include a first active region ACT1 of the first transistor ST1, a first drain electrode DE1, a first source electrode SE1, and a second capacitor electrode CPE2 of the capacitor C1.

[0119] The gate insulating layer GI may be disposed on the active layer ACTL. The gate insulating layer GI may include an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0120] The gate conductive layer GML may be disposed on the gate insulating layer GI. The gate conductive layer GML may include a single layer or multiple layers containing any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or any alloy thereof, or consisting of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or any alloy thereof.

[0121] In an embodiment, the gate conductive layer GML may include a first gate electrode GE1 of the first transistor ST1, and connection electrodes CE1 and CE2.

[0122] The passivation layer PV can be provided on the gate conductive layer GML. The passivation layer PV can include an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0123] The via layer VIA can be provided on the passivation layer PV. The via layer VIA can include an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0124] The first transistor ST1 can include a first active region ACT1, a first gate electrode GE1, a first drain electrode DE1, and a first source electrode SE1.

[0125] The first active region ACT1 can be provided in the active layer ACTL. The first gate electrode GE1 can be provided in the gate conductive layer GML. The first drain electrode DE1 and the first source electrode SE1 can be formed by heat-treating the active layer ACTL to make it conductive. The first drain electrode DE1 and the first source electrode SE1 can conduct electricity as a P-type semiconductor or an N-type semiconductor, but are not limited thereto. The first drain electrode DE1 can be electrically connected to the first voltage line VDL to receive a driving voltage. The first source electrode SE1 can be connected to the light-emitting element EMD to supply a driving current to the light-emitting element EMD.

[0126] The capacitor C1 can include a first capacitor electrode CPE1 and a second capacitor electrode CPE2. The first capacitor electrode CPE1 can be provided in the lower conductive layer BML. The second capacitor electrode CPE2 can be provided in the active layer ACTL.

[0127] Hereinafter, a film thickness measuring device that can be used to measure the thickness of a film included in a display device will be described.

[0128] Figure 4 is a cross-sectional view showing an embodiment of the film thickness measuring device. Figure 5 is a block diagram illustrating an embodiment of the calculation unit and the calculation process of the calculation unit.

[0129] Reference Figure 4 and Figure 5 , in an embodiment, the film thickness measuring device 1000 can be an energy-dispersive X-ray spectroscopy (energy-dispersive X-ray spectroscopy (“EDX”) or energy-dispersive spectroscopy (“EDS”)) device. In an embodiment, for example, the film thickness measuring device 1000 can be a device that irradiates an electron beam EB onto a target object SBJ (such as a film) and measures characteristic X-rays generated by the interaction between the electron beam EB and atoms contained in the target object SBJ. The film thickness measuring device 1000 can measure the thickness of the film that is the target object SBJ by measuring the intensity of X-rays generated from the target object SBJ.

[0130] An energy dispersive X-ray spectroscopy device can be used to analyze the composition and content of a target object SBJ. The thin film thickness measurement device 1000 in the illustrated embodiment can measure the thin film thickness of the target object SBJ using an energy dispersive X-ray spectroscopy device.

[0131] The target object SBJ may include a lower film 10 and a target thin film 20. The target thin film 20 may be the thin film of the object measured by the thin film thickness measurement device 1000. The lower film 10 may be a film or layer directly disposed below the target thin film 20. In the drawings, the target thin film 20 is illustrated as a single layer, but is not limited thereto. The target thin film 20 may have a stacked structure of multiple layers.

[0132] The target object SBJ may be part of the display device DD (reference Figures 1 to 3B ) described above. The target object SBJ may be a display device DD (reference Figure 1 ) that is being manufactured or has been manufactured. Figure 1 )

[0133] In an embodiment, the lower film 10 of the target object SBJ may be the first substrate SUB1 (reference Figure 1 ) or the second substrate SUB2 (reference Figure 3A ) of the display device DD (reference Figure 3A ), and the target thin film 20 may be at least one of the films disposed on the first substrate SUB1 (reference Figure 3A ) and the second substrate SUB2 (reference Figure 3A ).

[0134] In another embodiment, the lower film 10 of the target object SBJ may be the insulating film of the first transistor ST1 (reference Figure 3B ) described above, and the target thin film 20 may be the lower conductive layer BML (reference Figure 3B ), the active layer ACTL (reference Figure 3B ), and the gate conductive layer GML (reference Figure 3B ).

[0135] In another embodiment, the lower film 10 of the target object SBJ may be an indium tin oxide (“ITO”) layer of the pixel electrode PXE (reference Figure 3A ) described above, and the target thin film 20 may be a silver (Ag) layer.

[0136] In some embodiments, the target thin film 20 of the target object SBJ may include a metal layer of a single element such as copper (Cu), titanium (Ti), or silver (Ag), an alloy layer such as invar or stainless steel (SUS), and an oxide conductive layer such as indium tin oxide (“ITO”) or indium gallium zinc oxide (“IGZO”).

[0137] In an embodiment, the thin film thickness measuring device 1000 may include an electron beam generator 100, an optical module 200, an X-ray detector (e.g., an X-ray sensor or detector) 300, a calculation unit (e.g., a calculation circuit) 400, and a stage 500.

[0138] The electron beam generator 100 may generate an electron beam EB. The electron beam generator 100 may be an electron gun. In an embodiment, for example, the electron beam generator 100 may be a thermionic electron gun or a field emission electron gun. In an embodiment, when the electron beam generator 100 is a thermionic electron gun, the electron beam generator 100 may include a tungsten (W) filament or a LaB6 filament. In another embodiment, when the electron beam generator 100 is a field emission electron gun, the electron beam generator 100 may include a cold field emission electron gun that operates without a filament.

[0139] The electron beam generator 100 may include an acceleration electrode (anode) 110 that accelerates the electron beam EB. The acceleration electrode 110 may generate acceleration voltages within various ranges. In an embodiment, for example, the available acceleration voltage of the acceleration electrode 110 of the electron beam generator 100 may be approximately 1 kilovolt (kV) to 60 kV, but is not limited thereto.

[0140] The electron beam EB may be accelerated by the acceleration voltage of the acceleration electrode 110 of the electron beam generator 100. The reaction volume RV, which is the region where the electron beam EB reacts with the target object SBJ, may vary depending on the magnitude of the acceleration voltage. In an embodiment, as the magnitude of the acceleration voltage increases, the size of the reaction volume RV may increase and the analyzable depth TH_M of the thin film thickness measuring device 1000 may increase. In another embodiment, as the magnitude of the acceleration voltage decreases, the size of the reaction volume RV may decrease and the analyzable depth TH_M of the thin film thickness measuring device 1000 may decrease.

[0141] In some embodiments, the reaction volume RV is the region where the electron beam EB and the target object SBJ interact, and may be a three-dimensional space region. The analyzable depth TH_M is the depth of the reaction volume RV in the thickness direction of the target object SBJ, and may represent a one-dimensional depth.

[0142] In some embodiments, the size of the reaction volume RV and the analyzable depth TH_M may vary depending on the type of elements contained in the target object SBJ and the acceleration voltage. In an embodiment, since the target object SBJ includes elements having a relatively large atomic weight or atomic number or is composed of elements having a relatively large atomic weight or atomic number, the size of the reaction volume RV and the analyzable depth TH_M may be reduced. In another embodiment, since the target object SBJ includes elements having a relatively small atomic weight or atomic number or is composed of elements having a relatively small atomic weight or atomic number, the size of the reaction volume RV and the analyzable depth TH_M may be increased.

[0143] The analyzable depth TH_M may be on the order of several nanometers to several micrometers. In an embodiment, when the target thin film 20 is a metal layer including aluminum (Al) or composed of aluminum (Al), when the electron beam EB is irradiated at an acceleration voltage of 15 kiloelectron volts (keV), the analyzable depth TH_M may be approximately 2.4 micrometers (μm), when irradiated at an acceleration voltage of 30 keV, the analyzable depth TH_M may be approximately 8.5 μm, when irradiated at an acceleration voltage of 45 keV, the analyzable depth TH_M may be approximately 15.5 μm, and when irradiated at an acceleration voltage of 60 keV, the analyzable depth TH_M may be approximately 24 μm.

[0144] In another embodiment, when the target thin film 20 is a metal layer including copper (Cu) or composed of copper (Cu), when the electron beam EB is irradiated at an acceleration voltage of 15 keV, the analyzable depth TH_M may be approximately 0.72 μm, when irradiated at an acceleration voltage of 30 keV, the analyzable depth TH_M may be approximately 2.2 μm, when irradiated at an acceleration voltage of 45 keV, the analyzable depth TH_M may be approximately 4.7 μm, and when irradiated at an acceleration voltage of 60 keV, the analyzable depth TH_M may be approximately 8 μm.

[0145] In another embodiment, when the target thin film 20 is a metal layer including silver (Ag) or composed of silver (Ag), when the electron beam EB is irradiated at an acceleration voltage of 15 keV, the analyzable depth TH_M may be approximately 0.65 μm, when irradiated at an acceleration voltage of 30 keV, the analyzable depth TH_M may be approximately 2 μm, when irradiated at an acceleration voltage of 45 keV, the analyzable depth TH_M may be approximately 3.35 μm, and when irradiated at an acceleration voltage of 60 keV, the analyzable depth TH_M may be approximately 5.6 μm.

[0146] The analyzable depth TH_M, which depends on the acceleration voltage and the element type, is not limited to the above values, and the analyzable depth TH_M can vary depending on the distance from the electron beam generator 100 and other experimental conditions.

[0147] The electron beam EB can interact with the lower film 10 to generate a first X-ray XB1, and the electron beam EB can interact with the target thin film 20 to generate a second X-ray XB2.

[0148] The optical module 200 can control the path of the electron beam EB generated by the electron beam generator 100. The optical module 200 can include at least one lens 210 and at least one aperture 220.

[0149] In an embodiment, for example, the lens 210 of the optical module 200 can include at least one of a condenser lens and a detection lens for controlling the convergence and divergence of the electron beam EB, an objective lens for determining the final size of the electron beam EB irradiated on the target object SBJ, and an astigmatism corrector for correcting the aberration in the electron beam EB. The aperture 220 of the optical module 200 can include at least one of an objective aperture or a condenser aperture for adjusting the amount (i.e., intensity) of the electron beam EB.

[0150] The X-ray detector 300 can detect the characteristic X-rays generated by the target object SBJ interacting with the electron beam EB. Depending on the type of elements contained in the target object SBJ, the characteristic X-rays can have different energies. The X-ray detector 300 can generate an EDX spectrum based on the detected characteristic X-rays. This will be referred to later with reference to Figure 6 and Figure 7 describe the EDX spectrum.

[0151] The calculation unit 400 can compare the X-ray intensity of a thin film with a known thickness with the X-ray intensity of a thin film with an unknown thickness to derive the required thickness of the thin film with the unknown thickness. That is, the calculation unit 400 can compare the X-ray intensity of a thin film with a known thickness with the X-ray intensity of a thin film with an unknown thickness to derive the required thickness of the thin film with the unknown thickness.

[0152] In an embodiment, for example, as Figure 5 shown, the calculation unit 400 can include an X-ray intensity calculator 410, a calibration ratio calculator 420, a calibration data storage 430, and a thickness calculator 440.

[0153] The X-ray intensity calculator 410 can calculate or measure the X-ray intensity based on the EDX spectrum generated by the X-ray detector 300. This will be referred to later with reference to Figure 6 and Figure 7 describe the X-ray intensity calculation method of the X-ray intensity calculator 410.

[0154] The calibration ratio calculator 420 can calculate a calibration ratio (or calibration ratio information) based on the X-ray intensity of a thin film with a known thickness measured by the X-ray intensity calculator 410 and the calibration thickness information of the thin film with the known thickness. This will be referenced later Figure 9 、 Figure 10 and Figure 14 to describe the calibration ratio calculation method of the calibration ratio calculator 420.

[0155] The calibration data storage 430 can generate and store calibration data based on the calibration ratio information calculated by the calibration ratio calculator 420. The calibration data can include a calibration graph. The calibration graph can include a calibration curve and a calibration straight line. This will be referenced later Figures 11 to 13 as well as Figure 15 to describe the calibration graph and the calibration data storage method of the calibration data storage 430.

[0156] The thickness calculator 440 can derive the required thickness of a thin film with an unknown thickness by comparing the X-ray intensity of the thin film with the unknown thickness measured by the X-ray intensity calculator 410 with the X-ray intensity of the calibration data stored in the calibration data storage 430. This will be referenced later Figures 11 to 13 as well as Figure 15 to describe the required thickness derivation method of the thickness calculator 440.

[0157] The stage 500 can provide a space on which the target object SBJ can be placed. In some embodiments, the stage 500 can be grounded. In some embodiments, the stage 500 can be electrically connected to the target object SBJ.

[0158] When the stage 500 is electrically connected to the target object SBJ in a grounded state, the accumulation of electrons caused by the electron beam EB on the surface of the target object SBJ can be prevented. Therefore, the X-ray detection accuracy can be improved.

[0159] However, the present disclosure is not limited thereto. The stage 500 can be not grounded, and the stage 500 can be not electrically connected to the target object SBJ. In an embodiment, for example, when the target object SBJ is a metal thin film with a relatively high electrical conductivity, the accumulation of electrons can be relatively weak. Therefore, the stage 500 can be not grounded, and the stage 500 can be not electrically connected to the target object SBJ.

[0160] In some embodiments, the target object SBJ may include a conductive film on the surface of the target object SBJ. In an embodiment, for example, the conductive film on the target object SBJ may be a metal thin film. The conductive film may be formed by electro-preprocessing. In an embodiment, for example, the conductive film may be formed by metal preprocessing. By including the conductive film via preprocessing, the target object SBJ may have improved conductivity, thereby improving the interaction between the target object SBJ and the electron beam EB. In addition, the accumulation of electrons on the surface of the target object SBJ caused by the electron beam EB can be prevented. However, the present disclosure is not limited thereto, and the target object SBJ may not be preprocessed and may not include a conductive film on its surface.

[0161] The thin film thickness measuring device 1000 in the illustrated embodiment can measure the thickness of the thin film in a non-destructive and non-contact manner without damaging the target object SBJ. Therefore, the thickness of the actual pattern of the display device DD (refer to Figure 1 ) can be measured in actual mass production, and thus the accuracy of thickness measurement can be improved.

[0162] In addition, since the thin film thickness measuring device 1000 in the illustrated embodiment is implemented in a non-destructive and non-contact manner, post-processing can be continued after measuring the thickness of the display device DD (refer to Figure 1 ) in actual mass production, thereby improving the process yield and process efficiency.

[0163] In addition, the analyzable depth TH_M of the thin film thickness measuring device 1000 in the illustrated embodiment can be within a few micrometers and has a relatively high measurable resolution, so that the thickness of fine patterns can be analyzed.

[0164] Figure 6 is a diagram illustrating an embodiment of an EDX spectrum. Figure 7 is Figure 6 an enlarged view of region B of

[0165] In addition to Figure 4 and Figure 5 , reference is also made to Figure 6 and Figure 7 , the X-ray detector 300 can detect characteristic X-rays generated by the target object SBJ interacting with the electron beam EB. Depending on the type of elements contained in the target object SBJ, the characteristic X-rays may have different energies. The X-ray detector 300 can generate an EDX spectrum based on the detected characteristic X-rays.

[0166] An EDX spectrum is a graph showing the distribution of X-rays generated by a target object SBJ interacting with an electron beam EB. The EDX spectrum is a graph that divides the X-rays based on a predetermined energy (x-axis) and plots the intensity of the X-ray signal at each energy (y-axis). The x-axis of the EDX spectrum differentiates X-rays by energy, while the y-axis indicates the number of times X-rays of each energy are detected (counts per second (cps)) divided by the energy (cps / electron volt (eV)).

[0167] In an embodiment, for example, as Figure 6 shown, when the target object SBJ consists of four elements, there can be four peak groups of characteristic X-rays. Figure 6 The EDX spectrum shown in can include a first peak group PKG1, a second peak group PKG2, a third peak group PKG3, and a fourth peak group PKG4.

[0168] The first to fourth peak groups PKG1, PKG2, PKG3, and PKG4 can represent the peaks of characteristic X-rays generated from different elements. In an embodiment, for example, the first peak group PKG1 can represent the peak of characteristic X-rays generated from element A, the second peak group PKG2 can represent the peak of characteristic X-rays generated from element B, the third peak group PKG3 can represent the peak of characteristic X-rays generated from element C, and the fourth peak group PKG4 can represent the peak of characteristic X-rays generated from element D.

[0169] The X-ray intensity calculator 410 can calculate or measure the X-ray intensity based on the EDX spectrum generated by the X-ray detector 300. The X-ray intensity can be calculated or measured by the integral value of the peak group in the EDX spectrum ( Figure 5 operation F11 in).

[0170] In an embodiment, for example, as Figure 7 shown, each peak in the first peak group PKG1 can have a peak height PH and a peak width PW. The peak area PA of the first peak group PKG1 can be calculated using the peak height PH and the peak width PW of each peak. The peak area PA of the first peak group PKG1 can be the area size of the lower part of the graph calculated by integrating the graph of the EDX spectrum. The X-ray intensity calculated or measured by the X-ray intensity calculator 410 can refer to the peak area PA.

[0171] When the target film 20 has a stacked structure of a plurality of layers, each layer included in the target film 20 may include at least one different constituent element. In an embodiment, for example, when the target film 20 is composed of three layers and the first layer is composed of elements a, b, and c, the second layer is composed of elements a, b, and d, and the third layer is composed of elements a, b, and e, the film thickness of each of the first to third layers may be measured by measuring the intensity of characteristic X-rays generated from the c element in the first layer, the d element in the second layer, and the e element in the third layer.

[0172] The peak groups of the EDX spectra generated from the a and b elements contained in the first to third layers may not be distinguishable within a single peak group. The peak groups of the EDX spectra generated from different constituent elements in the first to third layers (i.e., the c element in the first layer, the d element in the second layer, and the e element in the third layer) may exist in different energy ranges. Therefore, by measuring the intensity of characteristic X-rays generated from each of the c element in the first layer, the d element in the second layer, and the e element in the third layer, the film thickness of each of the first to third layers can be measured.

[0173] Figure 8 is a cross-sectional view illustrating an embodiment of a method of measuring X-ray intensity of a volume sample. Figure 9 is a cross-sectional view illustrating an embodiment of an emission type method of a thin film thickness measurement method. Figure 10 is a cross-sectional view illustrating an embodiment of an absorption type method of a thin film thickness measurement method. Figure 11 is a schematic diagram illustrating an embodiment of a calibration curve.

[0174] Apart from Figures 4 to 7 In addition, refer to Figures 8 to 11 The film thickness measurement method in the embodiment may include an emission type method, an absorption type method and an element ratio type method. Figures 9 to 13 The emission-based method and the absorption-based method are described and reference will be made to Figure 14 and Figure 15 Describe the element ratio type method.

[0175] The calibration ratio calculator 420 may calculate the calibration ratio ( Figure 5 Operation F12).

[0176] like Figure 9 As shown in FIG. 1 , the calibration ratio R_E of the emission method can be the X-ray intensity I of the measurement sample of the target film 20. m.20 The X-ray intensity I b.20 ratio.

[0177] As Figure 10 shown, the calibration ratio R_A of the absorption method can be the X-ray intensity I of the measurement sample of the lower film 10 m.10 and the X-ray intensity I of the bulk sample 10A of the lower film 10 b.10 ratio.

[0178] The bulk samples 10A and 20A refer to thick film samples composed of the same elements as the lower film 10 and the target thin film 20, respectively. In an embodiment, when the target thin film 20 is a silver (Ag) thin film with a thickness of 0.5 μm, the bulk sample 20A of the target thin film 20 can be a silver (Ag) thin film with a thickness greater than or equal to 0.5 μm. In another embodiment, when the lower film 10 is a glass (SiO2) thin film with a thickness of 1 μm, the bulk sample 10A of the lower film 10 can be a glass (SiO2) thin film with a thickness greater than or equal to 1 μm.

[0179] The thickness T_10A of the bulk sample 10A and the thickness T_20A of the bulk sample 20A can be substantially greater than the thickness T_10 of the lower film 10 and the thickness T_20 of the target thin film 20, respectively, but in some cases they can be the same.

[0180] First, in order to calculate the calibration ratio R_E of the emission method and the calibration ratio R_A of the absorption method, as Figure 8 shown, the X-ray intensity calculator 410 can measure the X-ray intensities I of the bulk samples 10A and 20A b.10 and I b.20 ( Figure 5 operation F11 in).

[0181] The thickness T_10A of the bulk sample 10A and the thickness T_20A of the bulk sample 20A can be greater than or equal to the analyzable depth TH_M of the thin film thickness measuring device 1000. In an embodiment, for example, the minimum values of the thickness T_10A of the bulk sample 10A and the thickness T_20A of the bulk sample 20A can be equal to the maximum value of the analyzable depth TH_M. When the thickness T_10A of the bulk sample 10A and the thickness T_20A of the bulk sample 20A are greater than or equal to the analyzable depth TH_M of the thin film thickness measuring device 1000, X-rays can be generated only in the range equal to the analyzable depth TH_M of the thin film thickness measuring device 1000, regardless of the thicknesses T_10A of the bulk sample 10A and T_20A of the bulk sample 20A. The electron beam EB can interact with the bulk samples 10A and 20A to generate the reference X-ray XB0.

[0182] When the acceleration voltage of the thin film thickness measuring device 1000 or the types of elements contained in the bulk samples 10A and 20A are the same so that the analyzable depth TH_M is constant, the X-ray intensity of the reference X-ray XB0 can be constant. Therefore, the X-ray intensity calculator 410 can measure the X-ray intensity of the reference X-ray XB0 to calculate or measure the X-ray intensity I of the bulk samples 10A and 20A of a constant magnitude. b.10 and I b.20 .

[0183] Next, in order to calculate the calibration ratio R_E of the emission type method and the calibration ratio R_A of the absorption type method, as Figure 9 and Figure 10 shown, the X-ray intensity calculator 410 can measure the X-ray intensity I of the measurement sample of the target thin film 20 having a known thickness m.20 and the X-ray intensity I of the measurement sample of the lower film 10 provided under the target thin film 20 having a known thickness m.10 ( Figure 5 operation F11) in

[0184] The measurement sample can be a sample of a plurality of target thin films 20 having a known thickness. The thickness T_20 of the target thin film 20 as the measurement sample can be less than the analyzable depth TH_M. In this case, the reaction volume RV can be formed across the target thin film 20 and the lower film 10. A part of the energy of the electron beam EB can interact with the target thin film 20 to generate the second X-ray XB2, and the remaining part of the energy of the electron beam EB can interact with the lower film 10 to generate the first X-ray XB1.

[0185] The emission type method can measure the X-ray intensity I of the measurement sample of the target thin film 20 by the second X-ray XB2 generated from the target thin film 20 m.20 , and the absorption type method can measure the X-ray intensity I of the measurement sample of the lower film 10 by the first X-ray XB1 generated from the lower film 10 m.10 .

[0186] Next, the calibration ratio calculator 420 can calculate the calibration ratio R_E of the emission type method and / or the calibration ratio R_A of the absorption type method for each calibration thickness of the thin film having a known thickness ( Figure 5 operation F12) in

[0187] As described above, the calibration ratio R_E of the emission type method can be the ratio of the X-ray intensity I m.20 of the measurement sample of the target thin film 20 to the X-ray intensity I b.20 of the bulk sample 20A of the target thin film 20. The calibration ratio R_A of the absorption type method can be the X-ray intensity I m.10The ratio of the X-ray intensity I of the bulk sample 10A of the lower film 10 b.10 to.

[0188] In an embodiment, when the thickness T_20 of the target film 20 is 15 μm, the calibration ratio R_E of the emission method and the calibration ratio R_A of the absorption method can each be 50%. In another embodiment, when the thickness T_20 of the target film 20 is 28 μm, the calibration ratio R_E of the emission method and the calibration ratio R_A of the absorption method can be 70% and 30%, respectively.

[0189] In the above manner, the calibration ratio R_E of the emission method and the calibration ratio R_A of the absorption method can be calculated or measured respectively for each thickness T_20 of the target film 20 by a plurality of measurement samples of the target film 20 having known and different thicknesses. In other words, the calibration thickness information of the measurement samples with known thicknesses can be received from the outside and combined with the calibration ratio information measured at the corrected thicknesses of the corresponding measurement samples to generate the calibration ratio information at a predetermined thickness ( Figure 5 operation F12 in).

[0190] Next, the calibration data storage 430 can generate and store calibration data based on the calibration ratio information at a predetermined thickness calculated by the calibration ratio calculator 420 ( Figure 5 operation F13 in).

[0191] The calibration data can include a calibration graph. The calibration graph can include a calibration curve and a calibration straight line.

[0192] Figure 11 The calibration curve shown is a graph of the calibration ratio measured using each of the emission method and the absorption method with respect to the thickness T_20 of the target film 20. In Figure 11 the graph, the x-axis represents the thickness T_20 of the target film 20, and the y-axis represents the calibration ratios R_E and R_A expressed as a percentage. The emission graph EG shows that the calibration ratio R_E increases as the thickness T_20 of the target film 20 increases, and the absorption graph AG shows that the calibration ratio R_A decreases as the thickness T_20 of the target film 20 increases.

[0193] The calibration data (i.e., the calibration graph) generated by the calibration data storage 430 can be generated using the calibration ratio information of a plurality of samples calculated by the calibration ratio calculator 420 for each thickness of the target film 20.

[0194] As Figure 11As shown, the calibration ratio R_E of the emission method and the calibration ratio R_A of the absorption method can be inversely proportional to each other. In an embodiment, as the thickness T_20 of the target film 20 increases, the measurement depth TH_20 of the target film 20 can also increase, resulting in an increase in the X-ray intensity of the second X-ray XB2. Since the analyzable depth TH_M is constant, the measurement depth TH_10 of the lower film 10 can decrease, and thus the X-ray intensity of the first X-ray XB1 can decrease inversely. In another embodiment, as the thickness T_20 of the target film 20 decreases, the measurement depth TH_20 of the target film 20 can also decrease, resulting in a decrease in the X-ray intensity of the second X-ray XB2. Since the analyzable depth TH_M is constant, the measurement depth TH_10 of the lower film 10 can increase, and thus the X-ray intensity of the first X-ray XB1 can increase inversely.

[0195] In some embodiments, the sum of the calibration ratio R_E of the emission method and the calibration ratio R_A of the absorption method measured using the target film 20 with the same thickness can be 1. The calibration ratio R_E of the emission method and the calibration ratio R_A of the absorption method can each be less than or equal to 1. When expressed as a percentage, the sum of the calibration ratio R_E of the emission method and the calibration ratio R_A of the absorption method measured using the target film 20 with the same thickness can be 100%.

[0196] Finally, the thickness calculator 440 can derive the required thickness of the film with an unknown thickness by comparing the X-ray intensity of the film with an unknown thickness measured by the X-ray intensity calculator 410 with the X-ray intensity of the calibration data stored in the calibration data storage 430.

[0197] In an embodiment, for example, the X-ray intensity calculator 410 can measure the X-ray intensity of the target film 20 with an unknown thickness or the X-ray intensity of the lower film 10 under the target film 20 ( Figure 5 operation F21 in).

[0198] The thickness calculator 440 can derive the required thickness of the film corresponding to the above X-ray intensity measured in the calibration graph of the emission method or the absorption method ( Figure 5 operation F22 in).

[0199] The thickness calculator 440 can output the derived film thickness information to the outside ( Figure 5 operation F23 in).

[0200] Figure 12 is a graph showing the calibration curves and calibration straight lines derived by an embodiment of the emission method of the film thickness measurement method for each acceleration voltage of the film thickness measurement device. Figure 13is a diagram showing a calibration curve and a calibration straight line derived by an embodiment of the absorption-type method of the thin film thickness measurement method for each acceleration voltage of the thin film thickness measurement apparatus.

[0201] Apart from Figures 4 to 11 In addition, refer to Figure 12 and Figure 13 , Figure 12 and Figure 13 The graphs in are calibration graphs measured when the lower film 10 includes or consists of glass (SiO2) and the target film 20 includes or consists of copper (Cu). The first to sixth graphs G1, G2, G3, G4, G5 and G6 are calibration curves, and the first to sixth straight lines L1, L2, L3, L4, L5 and L6 are calibration straight lines.

[0202] The first graph G1 and the fourth graph G4 are calibration curves measured at an accelerating voltage of 10 keV, the second graph G2 and the fifth graph G5 are calibration curves measured at an accelerating voltage of 15 keV, and the third graph G3 and the sixth graph G6 are calibration curves measured at an accelerating voltage of 30 keV.

[0203] When comparing the first to third graphs G1, G2 and G3 or the fourth to sixth graphs G4, G5 and G6, it can be observed that as the acceleration voltage becomes larger, the measurable maximum thickness becomes larger. The measurable maximum thickness may be the same as the analyzable depth TH_M described above.

[0204] In some embodiments, the first to sixth graphs G1, G2, G3, G4, G5 and G6 may include a linear portion LS. The linear portion LS refers to a portion of the calibration curve that presents a shape similar to a straight line graph within an error range. In an embodiment, for example, within the linear portion LS, the first to sixth graphs G1, G2, G3, G4, G5 and G6 may present a shape similar to the first to sixth straight lines L1, L2, L3, L4, L5 and L6. In some embodiments, the straight line graph may be a graph obtained by connecting the endpoints of the linear portion LS with a straight line, and the error range may be within ±5%. In an embodiment, the range of the linear portion LS may be from 10% to 90% of the calibration ratio.

[0205] In some embodiments, the thickness calculator 440 may use a calibration curve to deduce the desired thickness of a film with an unknown thickness, but is not limited thereto. In an embodiment, for example, when the calibration ratio measured in a film with an unknown thickness is set in the linear portion LS, the thickness calculator 440 may convert the calibration curve into a calibration straight line, and use the calibration straight line to deduce the desired thickness.

[0206] In the following, an elemental ratio type method will be described. Configurations that are the same as those described above for the emission type method and the absorption type method will be denoted by the same reference numerals, redundant descriptions will be omitted or simplified, and the differences will be mainly described.

[0207] Figure 14 FIG. is a cross-sectional view of an embodiment of an elemental ratio type method for illustrating a thin film thickness measurement method. Figure 15 FIG. is a graph showing a calibration straight line derived from an embodiment of an elemental ratio type method of a thin film thickness measurement method.

[0208] In addition to Figures 4 to 7 also refer to Figure 14 and Figure 15 , the calibration ratio calculator 420 can calculate a calibration ratio (operation F12 in Figure 5 ) based on the X-ray intensity of a thin film with a known thickness measured by the X-ray intensity calculator 410 and the calibration thickness information of the thin film with a known thickness.

[0209] As shown in Figure 14 , the calibration ratio R_B of the elemental ratio type method can be the ratio of the X-ray intensity I m.20 of a measurement sample of the target thin film 20 to the X-ray intensity I m.10 of a measurement sample of the lower film 10. In another embodiment, the calibration ratio R_B of the elemental ratio type method can be the ratio of the X-ray intensity I m.10 of a measurement sample of the lower film 10 to the X-ray intensity I m.20 of a measurement sample of the target thin film 20. In the following, the former will be described by way of example.

[0210] First, in order to calculate the calibration ratio R_B of the elemental ratio type method, as shown in Figure 14 , the X-ray intensity calculator 410 can measure the X-ray intensities I m.10 and I m.20 (operation F11 in Figure 5 ) of a measurement sample of the lower film 10 and a measurement sample of the target thin film 20.

[0211] Next, the calibration ratio calculator 420 can calculate the calibration ratio R_B of the elemental ratio type method for each calibration thickness of the thin film with a known thickness (operation F12 in Figure 5 ).

[0212] In an embodiment, when the thickness T_20 of the target thin film 20 is 500 Å , the calibration ratio R_B of the elemental ratio type method can be approximately 6. In another embodiment, when the thickness T_20 of the target thin film 20 is When, the calibration ratio R_E of the emission type method and the calibration ratio R_A of the absorption type method can be about 13.

[0213] In the above manner, the calibration ratio R_B of the element ratio type method can be calculated or measured for each thickness T_20 of the target film 20 by a plurality of measurement samples of the target film 20 having known and different thicknesses. In other words, the calibration thickness information of the measurement samples with known thicknesses can be received from the outside and combined with the calibration ratio information measured at the corrected thicknesses of the corresponding measurement samples to generate calibration ratio information at a predetermined thickness ( Figure 5 operation F12 in).

[0214] Next, the calibration data storage 430 can generate and store calibration data based on the calibration ratio information at a predetermined thickness calculated by the calibration ratio calculator 420 ( Figure 5 operation F13 in).

[0215] Figure 15 Shown is a calibration straight line of a graph of the calibration ratio measured using the element ratio type method with respect to the thickness T_20 of the target film 20. In Figure 15 the graph of, the x-axis represents the thickness T_20 of the target film 20, and the y-axis represents the calibration ratio.

[0216] When the calibration ratio R_B of the element ratio type method is the ratio of the X-ray intensity I m.20 of the measurement sample of the target film 20 to the X-ray intensity I m.10 of the measurement sample of the lower film 10, the element ratio type graph shows that the calibration ratio R_B of the element ratio type method increases as the thickness T_20 of the target film 20 increases.

[0217] In another embodiment, when the calibration ratio R_B of the element ratio type method is the ratio of the X-ray intensity I m.10 of the measurement sample of the lower film 10 to the X-ray intensity I m.20 of the measurement sample of the target film 20, the element ratio type graph can show that the calibration ratio R_B of the element ratio type method decreases as the thickness T_20 of the target film 20 increases.

[0218] Figure 15 The graph of shows the calibration straight line measured when the lower film 10 includes indium tin oxide (“ITO”) or is composed of indium tin oxide (“ITO”) and the target film 20 includes silver (Ag) or is composed of silver (Ag). Figure 15 The seventh graph G7 in represents the calibration straight line measured when the acceleration voltage is 15 keV.

[0219] In the case of the elemental ratio type method, the calibration line appears as a straight line rather than a curve, so the thickness calculator 440 can derive the required thickness of the thin film over all ranges without an error range and without being constrained by the linear portion LS.

[0220] Hereinafter, the thin film thickness measurement method in the embodiments will be described.

[0221] Figure 16 It is a flowchart of an embodiment of the emission type method illustrating the thin film thickness measurement method.

[0222] Reference Figure 16 , in an embodiment, the emission type method S1 of the thin film thickness measurement method may include measuring a first X-ray intensity of a bulk sample of the target thin film (operation S110), measuring a second X-ray intensity of a plurality of target thin films having known thicknesses (operation S120), calculating a calibration ratio that is the ratio of the second X-ray intensity to the first X-ray intensity to generate a calibration curve or a calibration line indicating the calibration ratio with respect to the thin film thickness (operation S130), and measuring a third X-ray intensity of a target thin film having an unknown thickness to derive the thin film thickness corresponding to the third X-ray intensity from the calibration curve or the calibration line (operation S140).

[0223] Figure 17 It is a flowchart of an embodiment of the absorption type method illustrating the thin film thickness measurement method.

[0224] Reference Figure 17 , in an embodiment, the absorption type method S2 of the thin film thickness measurement method may include measuring a first X-ray intensity of a bulk sample of the lower film disposed below the target thin film (operation S210), measuring a second X-ray intensity of a plurality of lower films disposed below a plurality of target thin films having known thicknesses (operation S220), calculating a calibration ratio that is the ratio of the second X-ray intensity to the first X-ray intensity to generate a calibration curve or a calibration line indicating the calibration ratio with respect to the thin film thickness (operation S230), and measuring a third X-ray intensity of the lower film disposed below the target thin film having an unknown thickness to derive the thin film thickness corresponding to the third X-ray intensity from the calibration curve or the calibration line (operation S240).

[0225] Figure 18 It is a flowchart of an embodiment of the elemental ratio type method illustrating the thin film thickness measurement method.

[0226] Reference Figure 18In an embodiment, the element ratio type method S3 of the film thickness measurement method may include measuring a first X-ray intensity of a target film having a known thickness (operation S310), measuring a second X-ray intensity of a lower film disposed below the target film having a known thickness (operation S320), calculating a calibration ratio which is a ratio of the first X-ray intensity to the second X-ray intensity or a ratio of the second X-ray intensity to the first X-ray intensity to generate a calibration curve or a calibration straight line indicating the calibration ratio relative to the film thickness (operation S330), and measuring a third X-ray intensity of the target film having an unknown thickness to derive a film thickness corresponding to the third X-ray intensity from the calibration curve or the calibration straight line (operation S340).

[0227] In the drawings, it is illustrated that operation S320 is performed after operation S310, but the present disclosure is not limited thereto. In an embodiment, operation S310 may be performed after operation S320. In another embodiment, operation S310 and operation S320 may be performed simultaneously.

[0228] The film thickness measurement method in the embodiment may select at least one of the emission type method S1 , the absorption type method S2 , and the element ratio type method S3 to measure the film thickness.

[0229] Figure 19 An X-ray intensity measurement graph according to a comparative example is shown. Figure 20 A calibration graph measured by an embodiment of an emission-type method of a thin film thickness measurement method is shown. Figure 21 A calibration graph measured by an embodiment of an element ratio type method of a thin film thickness measurement method is shown.

[0230] Apart from Figure 4 , Figure 5 , Figure 9 and Figure 14 In addition, refer to Figures 19 to 21 , Figure 19 The first comparison graph COL0_1 and the second comparison graph COL0_2 shown in FIG. 1 are graphs obtained by measuring the intensities of X-rays generated from the same target object SBJ using different X-ray detectors 300 . Figure 20 The first experimental graph COL1_1 and the second experimental graph COL1_2 shown in FIG. 1 are also graphs obtained by measuring the X-ray intensities generated from the same target object SBJ using different X-ray detectors 300. Figure 21 The third experimental graph COL2_1 and the fourth experimental graph COL2_2 shown in FIG. 1 are also graphs obtained by measuring the X-ray intensities generated from the same target object SBJ using different X-ray detectors 300 .

[0231] Even though the first comparison graph COL0_1 and the second comparison graph COL0_2 are obtained by measuring the X-ray intensity of each thickness of the target film 20 of the same target object SBJ, they still show differences.

[0232] In the comparative example, the X-ray intensity generated from the target film 20 having the same thickness is approximately 160,000 in the first comparison graph COL0_1 and approximately 200,000 in the second comparison graph COL0_2.

[0233] In another comparative example, the thickness of the target film 20 having the same X-ray intensity of 200,000 is approximately in the first comparison graph COL0_1 and approximately

[0234] Thus, when the X-ray intensity generated from the target film 20 is directly measured and used to generate a calibration graph, the data in the graph changes as the X-ray detector 300 changes.

[0235] The factors affecting the X-ray intensity can include not only the acceleration voltage and the type of elements contained in the target object SBJ as described above, but also other factors such as the sensitivity of the X-ray detector 300 or the product function.

[0236] Through the calibration ratio in the film thickness measuring device 1000 and the film thickness measuring method in the illustrated embodiment, the above different factors affecting the X-ray intensity can be controlled to cancel each other out or be equal, thereby minimizing the measurement error.

[0237] In the embodiment, Figure 20 shows a calibration graph generated using the calibration ratio of the X-ray intensity I m.20 of the measurement sample that is the target film 20 to the X-ray intensity I b.20 of the bulk sample 20A of the target film 20. In other words, Figure 20 it is a calibration graph generated using the emission type method.

[0238] In another embodiment, Figure 21 shows a calibration graph generated using the calibration ratio of the X-ray intensity I m.20 of the measurement sample that is the target film 20 to the X-ray intensity I m.10 of the measurement sample of the lower film 10. In other words, Figure 21 it is a calibration graph generated using the element ratio type method.

[0239] Thus, when generating a calibration graph using a calibration ratio as in the emission type method, absorption type method, and element ratio type method, factors caused by the X-ray detector 300 and other factors depending on the performance of the thin film thickness measurement device 1000 can be controlled to cancel each other out or be equal, thereby minimizing measurement errors.

[0240] In the thin film thickness measurement device 1000 and the thin film thickness measurement method in the illustrated embodiment, the thickness of the thin film can be measured in a non-destructive and non-contact manner without damaging the target object SBJ. Therefore, the thickness of the actual pattern of the display device DD (refer to Figure 1 ) can be measured in actual mass production, and thus the accuracy of thickness measurement can be improved.

[0241] Furthermore, in the thin film thickness measurement device 1000 and the thin film thickness measurement method in the illustrated embodiment, since it is implemented in a non-destructive and non-contact manner, post-processing can be continued after measuring the thickness of the display device DD (refer to Figure 1 ) in actual mass production, thereby improving the process yield and process efficiency.

[0242] In addition, the analyzable depth TH_M of the thin film thickness measurement device 1000 in the illustrated embodiment can be about several nanometers to several micrometers and has a relatively high measurement resolution, so that the thickness of fine patterns can be analyzed.

[0243] At the end of the detailed description, those skilled in the art will understand that many changes and modifications can be made to the preferred embodiments without substantially departing from the principles of the present disclosure. Therefore, the preferred embodiments of the present disclosure are disclosed only for general and descriptive purposes, and not for the purpose of limitation.

Claims

1. A thin film thickness measurement device, comprising: An electron beam generator that irradiates an electron beam onto a target object including a target thin film and a lower film disposed below the target thin film; A detector that detects X-rays emitted from the target object by the electron beam; And A calculation unit that derives the thickness of the target thin film from the intensity of the X-rays detected by the detector, the calculation unit including: An X-ray intensity calculator that measures a first X-ray intensity of a bulk sample of the target thin film or a bulk sample of the lower film, measures a second X-ray intensity of a plurality of target thin films with known thicknesses or a plurality of lower films disposed below the plurality of target thin films with known thicknesses, and measures a third X-ray intensity of a target thin film with an unknown thickness or a lower film disposed below the target thin film with an unknown thickness; A calibration ratio calculator that calculates a calibration ratio that is a ratio of the second X-ray intensity to the first X-ray intensity; A calibration data storage that generates a calibration graph representing the calibration ratio with respect to the thicknesses of the plurality of target thin films; and A thickness calculator that derives the thin film thickness corresponding to the third X-ray intensity from the calibration graph.

2. The thin film thickness measurement device according to claim 1, wherein The first X-ray intensity is the X-ray intensity of the bulk sample of the target thin film, and The second X-ray intensity is the X-ray intensity of the plurality of target thin films with known thicknesses.

3. The thin film thickness measurement device according to claim 1, wherein The first X-ray intensity is the X-ray intensity of the bulk sample of the lower film, and The second X-ray intensity is the X-ray intensity of the plurality of lower films disposed below the plurality of target thin films with known thicknesses.

4. The thin film thickness measurement device according to claim 1, wherein The calibration ratio when the first X-ray intensity is the X-ray intensity of the bulk sample of the target thin film and the second X-ray intensity is the X-ray intensity of the plurality of target thin films with known thicknesses is a first calibration ratio, The calibration ratio when the first X-ray intensity is the X-ray intensity of the bulk sample of the lower film and the second X-ray intensity is the X-ray intensity of the plurality of lower films disposed below the plurality of target thin films with known thicknesses is a second calibration ratio, Each of the first calibration ratio and the second calibration ratio is less than or equal to 1, and The sum of the first calibration ratio and the second calibration ratio measured from the plurality of target thin films with known and identical thicknesses is 1.

5. The thin film thickness measuring device according to claim 1, wherein, The calibration graph has a curve shape.

6. The thin film thickness measurement device according to claim 1, further comprising: A stage on which the target object is disposed, Wherein the target object and the stage are not electrically connected.

7. The film thickness measuring device according to any one of claims 1 to 6, wherein, The target object is a display device being manufactured or already manufactured, Wherein the display device includes at least one conductive film and a non-conductive film that insulates the at least one conductive film from the outside or other layers, and Wherein the target thin film is the conductive film and the lower film is the non-conductive film.

8. A thin film thickness measurement device, comprising: An electron beam generator that irradiates an electron beam onto a target object including a target thin film and a lower film disposed below the target thin film; A detector that detects X-rays emitted from the target object by the electron beam; And A calculation unit that derives the thickness of the target thin film from the intensity of the X-rays detected by the detector, the calculation unit including: An X-ray intensity calculator that measures a first X-ray intensity of a plurality of target thin films with known thicknesses, measures a second X-ray intensity of a plurality of lower films disposed below the plurality of target thin films with known thicknesses, and measures a third X-ray intensity of a target thin film with an unknown thickness; A calibration ratio calculator that calculates a calibration ratio that is a ratio of the first X-ray intensity to the second X-ray intensity or a ratio of the second X-ray intensity to the first X-ray intensity; A calibration data storage that generates a calibration graph representing the calibration ratio with respect to the thicknesses of the plurality of target thin films; and A thickness calculator that derives a film thickness corresponding to the third X-ray intensity from the calibration graph.

9. A method for measuring the thickness of a thin film, comprising: Measuring a first X-ray intensity of a bulk sample of a target thin film or a bulk sample of a lower film disposed below the target thin film; Measuring a second X-ray intensity of a plurality of target thin films with known thicknesses or a plurality of lower films disposed below the plurality of target thin films with known thicknesses; Calculating a calibration ratio that is a ratio of the second X-ray intensity to the first X-ray intensity to generate a calibration graph representing the calibration ratio with respect to the thicknesses of the plurality of target thin films; and Measuring a third X-ray intensity of a target thin film with an unknown thickness or a lower film disposed below the target thin film with an unknown thickness to derive a film thickness corresponding to the third X-ray intensity from the calibration graph.

10. A method for measuring the thickness of a thin film, comprising: Measuring a first X-ray intensity of a plurality of target thin films with known thicknesses; Measuring a second X-ray intensity of a plurality of lower films disposed below the plurality of target thin films with known thicknesses; Calculating a calibration ratio that is a ratio of the first X-ray intensity to the second X-ray intensity or a ratio of the second X-ray intensity to the first X-ray intensity to generate a calibration graph representing the calibration ratio with respect to the thicknesses of the plurality of target thin films; and Measuring a third X-ray intensity of a target thin film with an unknown thickness to derive a film thickness corresponding to the third X-ray intensity from the calibration graph.

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