Cascode cascade GaN HEMT device aging test method and system

Abstract

The invention discloses an aging test method and system for a Cascode cascade GaN HEMT device, and the method comprises the steps: adding high-temperature aging treatment before an FT electrical test and a reverse bias aging process, simulating a high-speed on-load switching process of the device under a high-temperature condition through the treatment process, and achieving the high-speed on-load switching process of the device under a high-temperature condition. By applying transient voltage slightly exceeding a rated value of the device for a short time, defects in the device are completely activated, so that early failure products can be better selected.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular, to an aging test method and system for a Cascode cascaded GaN HEMT device. Background Art

[0002] Gallium nitride high electron mobility transistors (GaN HEMTs) have the characteristics of high mobility, high breakdown field strength, and wide bandgap. According to the switching state of GaN HEMT devices at zero voltage, the common device types on the market can be divided into p-type gate GaN HEMTs and Cascode cascaded GaN HEMTs. Compared with p-type gate GaN HEMT devices, Cascode cascaded GaN HEMTs have a high threshold voltage and excellent on-resistance performance, and are more suitable for industrial scenarios with high requirements for operating stability. As Figure 1 shown, a Cascode cascaded GaN HEMT device is composed of a low-voltage enhancement-type Si MOS and a high-voltage depletion-type GaN HEMT connected in series in a common source and common gate configuration.

[0003] Since GaN HEMTs do not have a body diode, and the avalanche resistance of the body diode of low-voltage Si MOS is negligible compared to the high-voltage application environment, once breakdown occurs inside a Cascode cascaded GaN HEMT device, it will cause cumulative damage to the device, resulting in occasional failures during device operation. In order to intercept these devices with the possibility of occasional failures before leaving the factory, each manufacturer will pre-age the devices by applying power for a short time, accelerating the early failure process of the devices to ensure the quality of the devices leaving the factory.

[0004] Currently, conventional methods mainly use constant reverse bias voltage to perform aging tests on devices. During aging, in order to avoid damage to the devices caused by high voltage as much as possible, the applied reverse bias voltage is lower than the rated voltage of the devices. This method can intercept some early failure devices, but the stress conditions are single and cannot activate all types of defects, resulting in some devices still entering the circulation link in actual applications, bringing risks to the subsequent applications of the devices. Summary of the Invention

[0005] The present application provides an aging test method and system for a Cascode cascaded GaN HEMT device to solve the technical problem of insufficient accuracy of existing test methods.

[0006] To solve the above technical problem, in the first aspect of the present application, an aging test method for a Cascode cascaded GaN HEMT device is provided, including:

[0007] Obtain a GaN HEMT device to be tested;

[0008] Perform high-temperature aging treatment on the GaN HEMT device;

[0009] Screen the GaN HEMT device after high-temperature aging treatment through FT electrical testing;

[0010] Perform reverse-bias aging treatment on the screened GaN HEMT device;

[0011] Screen the GaN HEMT device after reverse-bias aging treatment through FT electrical testing, and classify the screened GaN HEMT device as a qualified device.

[0012] Preferably, performing high-temperature aging treatment on the GaN HEMT device specifically includes:

[0013] Place the GaN HEMT device in an environment with a preset temperature and perform high-speed load-switching operation for a preset duration according to the preset operating parameters.

[0014] Preferably, the operating parameters include: off-state voltage, on-state operating current, and switching frequency.

[0015] Preferably, the value range of the off-state voltage is: 100% to 120% of the rated voltage of the GaN HEMT device;

[0016] The value range of the on-state operating current is 20% to 80% of the rated on-state current of the GaN HEMT device;

[0017] The value range of the switching frequency is: 20 to 200 kHz.

[0018] Preferably, the value range of the preset temperature is: 100 to 150 degrees Celsius.

[0019] Preferably, the preset duration is: 2 to 24 hours.

[0020] Preferably, before performing high-temperature aging treatment on the GaN HEMT device, it further includes:

[0021] Perform preliminary testing on the obtained GaN HEMT device through FT electrical testing.

[0022] Meanwhile, a second aspect of the present application provides a Cascode cascaded GaN HEMT device aging test system, including:

[0023] A device acquisition module for acquiring the GaN HEMT device to be tested;

[0024] A high-temperature treatment module for performing high-temperature aging treatment on the GaN HEMT device;

[0025] A first electrical property testing module for screening the GaN HEMT device after high-temperature aging treatment through FT electrical property testing;

[0026] A reverse-bias aging treatment module for performing reverse-bias aging treatment on the screened GaN HEMT device;

[0027] A second electrical property testing module for screening the GaN HEMT device after reverse-bias aging treatment through FT electrical property testing, and classifying the screened GaN HEMT device as a qualified device.

[0028] Preferably, the high-temperature treatment module is specifically configured to:

[0029] Place the GaN HEMT device in an environment with a preset temperature and perform high-speed load-switching operation for a preset duration according to preset operating parameters;

[0030] Wherein, the operating parameters include: off-state voltage, on-state operating current, and switching frequency;

[0031] The value range of the off-state voltage is: 100% to 120% of the rated voltage of the GaN HEMT device;

[0032] The value range of the on-state operating current is 20% to 80% of the rated on-state current of the GaN HEMT device;

[0033] The value range of the switching frequency is: 20 to 200 kHz.

[0034] Preferably, it further includes: a third electrical property testing module, which is arranged between the device acquisition module and the high-temperature treatment module, and is used for performing preliminary testing on the acquired GaN HEMT device through FT electrical property testing.

[0035] From the above technical solutions, it can be seen that the present application has the following advantages:

[0036] The solution provided by the present application adds high-temperature aging treatment before the FT electrical property testing and reverse-bias aging process. By this treatment process, it simulates the high-speed load-switching process of the device under high-temperature conditions, and completely activates the defects inside the device by applying a transient voltage slightly exceeding the rated value of the device for a short time, so as to better select early-failure products and ensure the quality of the products leaving the factory. Description of the Drawings

[0037] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0038] Figure 1 It is the circuit structure diagram of the Cascode cascaded GaN HEMT device.

[0039] Figure 2 It is the schematic diagram of the step flow of an embodiment of the aging test method for the Cascode cascaded GaN HEMT device provided by the present application.

[0040] Figure 3 It is the overall flow logic diagram of an embodiment of the aging test method for the Cascode cascaded GaN HEMT device provided by the present application.

[0041] Figure 4 It is the schematic diagram of the structure of an embodiment of the aging test system for the Cascode cascaded GaN HEMT device provided by the present application. Detailed implementation manners

[0042] The embodiments of the present application provide an aging test method and system for the Cascode cascaded GaN HEMT device, which are used to solve the technical problem of insufficient accuracy of the existing test methods.

[0043] To make the invention purpose, features, and advantages of the present application more obvious and understandable, the following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the embodiments described below are only some embodiments of the present application, rather than all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0044] Please refer to Figure 2 and Figure 3 , an aging test method for the Cascode cascaded GaN HEMT device provided by the present application includes:

[0045] Step 101: Obtain the GaN HEMT device to be tested;

[0046] Step 102: Perform high-temperature aging treatment on the GaN HEMT device;

[0047] Step 103: Screen the GaN HEMT devices after high-temperature aging treatment through FT electrical testing;

[0048] Step 104: Perform reverse-bias aging treatment on the screened GaN HEMT devices;

[0049] Step 105: Screen the GaN HEMT devices after reverse-bias aging treatment through FT electrical testing, and classify the screened GaN HEMT devices as qualified devices.

[0050] Further, the specific steps for performing high-temperature aging treatment on the GaN HEMT devices include:

[0051] Place the GaN HEMT devices in an environment with a preset temperature, and perform high-speed load-switching operation for a preset duration according to preset operating parameters.

[0052] Further, the operating parameters include: off-state voltage, on-state operating current, and switching frequency.

[0053] Further, the value range of the off-state voltage is: 100% to 120% of the rated voltage of the GaN HEMT device;

[0054] The value range of the on-state operating current is 20% to 80% of the rated on-state current of the GaN HEMT device;

[0055] The value range of the switching frequency is: 20 to 200 kHz.

[0056] Further, the value range of the preset temperature is: 100 to 150 degrees Celsius.

[0057] Further, the preset duration is: 2 to 24 hours.

[0058] Further, before step 102 of this embodiment, it also includes:

[0059] Step 1020: Perform preliminary testing on the obtained GaN HEMT devices through FT electrical testing.

[0060] It should be noted that, before the first FT electrical testing and reverse-bias aging process of this solution, a high-temperature operation (HTO) process is added. This process simulates the high-speed load-switching process of the device under high-temperature conditions. By applying a transient voltage slightly exceeding the rated value of the device for a short time, the defects inside the device are fully activated, so as to better select early-failure products and ensure the quality of the products leaving the factory.

[0061] The specific complete process can be implemented according to the following example: For example, Figure 3 As shown, first take out the finished products from the factory, and then screen out the defective products after packaging through FT electrical measurement. Place the qualified products in the fixture, set the off-state voltage between 100% and 120% of the rated voltage of the device, and adjust the load so that the on-state operating current of the device is in the range of 20% to 80% of its rated conduction current. Set the switching frequency of the device between 20 and 200 kHz, and then take it out after aging for 2 to 24 hours under the condition of 100 to 150 °C. Then, take out the finished products from the fixture and conduct the second electrical FT test to screen out the devices whose some indicators drift or fail during the HTO aging process. After the test screening, take out the qualified products for reverse bias aging. The second aging process is the same as the traditional aging scheme, control the reverse bias voltage between 60% and 90% of the rated voltage of the device, set the aging temperature in the range of 100 to 150 °C, and take it out after aging for 2 to 24 hours. Then conduct the third FT electrical test to screen out the finished products for packaging and warehousing.

[0062] The above is the detailed description of an embodiment of the aging test method for a Cascode cascaded GaN HEMT device provided by this application. The following is the detailed description of an embodiment of the aging test system for a Cascode cascaded GaN HEMT device provided by this application.

[0063] Please refer to Figure 4 , this application embodiment provides an aging test system for a Cascode cascaded GaN HEMT device, including:

[0064] A device acquisition module 201, configured to acquire a GaN HEMT device to be tested;

[0065] A high-temperature processing module 202, configured to perform high-temperature aging processing on the GaN HEMT device;

[0066] A first electrical test module 203, configured to screen the GaN HEMT device after high-temperature aging processing through FT electrical test, so as to perform reverse bias aging processing on the GaN HEMT device passing the screening

[0067] A reverse bias aging processing module 204, configured to perform reverse bias aging processing on the GaN HEMT device after high-temperature aging processing;

[0068] A second electrical test module 205, configured to screen the GaN HEMT device after reverse bias aging processing through FT electrical test, and classify the GaN HEMT device passing the screening as a qualified device.

[0069] Further, the high-temperature processing module is specifically configured to:

[0070] Place the GaN HEMT device in an environment at a preset temperature and perform high-speed load-switching operation for a preset duration according to preset operating parameters;

[0071] Among them, the operating parameters include: off-state voltage, on-state operating current, and switching frequency;

[0072] The value range of the off-state voltage is: 100% to 120% of the rated voltage of the GaN HEMT device;

[0073] The value range of the on-state operating current is 20% to 80% of the rated conduction current of the GaN HEMT device;

[0074] The value range of the switching frequency is: 20 to 200 kHz.

[0075] Furthermore, it further includes: a third electrical property testing module 2020, which is arranged between the device acquisition module and the high-temperature treatment module and is used to perform a preliminary test on the obtained GaN HEMT device through FT electrical property testing.

[0076] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the above-described terminal, device, and unit can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0077] In several embodiments provided in the present application, it should be understood that the disclosed terminal, device, and method can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units is only a logical function division, and there can be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point, the shown or discussed mutual coupling or direct coupling or communication connection can be through some interfaces, and the indirect coupling or communication connection of the device or unit can be in electrical, mechanical, or other forms.

[0078] In the description of this application and the above-mentioned accompanying drawings, terms such as "first", "second", "third", "fourth", etc. (if any) are used to distinguish similar objects and do not necessarily describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of this application described here, for example, can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that comprises a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.

[0079] It should be understood that in this application, "at least one (item)" means one or more, and "a plurality" means two or more. "And / or" is used to describe the association relationship of associated objects and indicates that there can be three relationships. For example, "A and / or B" can mean: only A exists, only B exists, and both A and B exist at the same time. Among them, A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one (one) of the following" or its similar expressions refer to any combination of these items, including any combination of single items (ones) or plural items (ones). For example, at least one (one) of a, b, or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0080] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0081] In addition, in each embodiment of the present invention, the functional units can be integrated into a processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated units can be implemented in the form of hardware or in the form of software functional units.

[0082] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in various embodiments of the present invention. The foregoing storage medium includes: various media that can store program codes, such as USB flash drives, mobile hard disks, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), magnetic disks, or optical discs.

[0083] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of various embodiments of the present application.

Claims

1. A method for aging test of a Cascode cascaded GaN HEMT device, characterized in that, Including: Obtain a GaN HEMT device to be tested; Perform high-temperature aging treatment on the GaN HEMT device; Screen the GaN HEMT device after high-temperature aging treatment through FT electrical testing; Perform reverse-bias aging treatment on the GaN HEMT device that passes the screening; Screen the GaN HEMT device after reverse-bias aging treatment through FT electrical testing, and classify the GaN HEMT device that passes the screening as a qualified device.

2. The aging test method of a Cascode cascaded GaN HEMT device according to claim 1, characterized in that, Specifically, performing high-temperature aging treatment on the GaN HEMT device includes: Place the GaN HEMT device in an environment with a preset temperature and perform high-speed load-switching operation for a preset duration according to preset operating parameters.

3. The aging test method of a Cascode cascaded GaN HEMT device according to claim 2, characterized in that, The operating parameters include: off-state voltage, on-state operating current, and switching frequency.

4. A method for aging test of a Cascode cascaded GaN HEMT device according to claim 3, characterized in that, The value range of the off-state voltage is: 100% to 120% of the rated voltage of the GaN HEMT device; The value range of the on-state operating current is 20% to 80% of the rated conduction current of the GaN HEMT device; The value range of the switching frequency is: 20 to 200 kHz.

5. A method for aging test of a Cascode cascaded GaN HEMT device according to claim 2, characterized in that, The value range of the preset temperature is: 100 to 150 degrees Celsius.

6. A method for aging test of a Cascode - cascaded GaN HEMT device according to claim 2, characterized in that, The preset duration is: 2 to 24 hours.

7. A method for aging test of a Cascode cascaded GaN HEMT device according to claim 1, characterized in that Before performing high-temperature aging treatment on the GaN HEMT device, it also includes: Perform preliminary testing on the obtained GaN HEMT device through FT electrical testing.

8. A Cascode cascaded GaN HEMT device aging test system, characterized in that, Including: A device acquisition module for obtaining a GaN HEMT device to be tested; A high-temperature treatment module for performing high-temperature aging treatment on the GaN HEMT device; A first electrical testing module for screening the GaN HEMT device after high-temperature aging treatment through FT electrical testing; A reverse-bias aging treatment module for performing reverse-bias aging treatment on the GaN HEMT device that passes the screening; A second electrical testing module for screening the GaN HEMT device after reverse-bias aging treatment through FT electrical testing, and classifying the GaN HEMT device that passes the screening as a qualified device.

9. A Cascode cascaded GaN HEMT device aging test system according to claim 8, characterized in that, Specifically, the high-temperature treatment module is used for: Place the GaN HEMT device in an environment with a preset temperature and perform high-speed load-switching operation for a preset duration according to preset operating parameters; Wherein, the operating parameters include: off-state voltage, on-state operating current, and switching frequency; The value range of the off-state voltage is: 100% to 120% of the rated voltage of the GaN HEMT device; The value range of the on-state operating current is 20% to 80% of the rated conduction current of the GaN HEMT device; The value range of the switching frequency is: 20 to 200 kHz.

10. A Cascode cascaded GaN HEMT device aging test system according to claim 8, characterized in that It also includes: A third electrical testing module, which is arranged between the device acquisition module and the high-temperature treatment module, and is used for performing preliminary testing on the obtained GaN HEMT device through FT electrical testing.

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