Ion beam etching device and parameter analysis method

Abstract

The present application discloses an ion beam etching device and a parameter analysis method, which relate to the field of semiconductor technology. The ion beam etching device includes: a film-forming vacuum chamber, an etching ion source, a sample carrier, an electric field generating device and a magnetic field generating device; the film-forming vacuum chamber provides a stable vacuum environment, the etching ion source generates a high-energy ion beam, and the sample carrier is located directly below the emission end of the etching ion source to ensure vertical incidence of the ion beam; the magnetic field generating device and the electric field generating device work together to control the motion trajectory of the ions by adjusting the field strength and direction, optimize the ion beam distribution, and make the ions act on the sample surface more accurately, effectively improving the etching uniformity and etching efficiency.

Description

Technical Field

[0001] The present application relates to the field of semiconductors, and in particular to an ion beam etching device and a parameter analysis method. Background Art

[0002] Plasma etching technology is a key process in integrated circuit manufacturing, directly impacting product quality and the advancement of production technology. Ion beam etching is characterized by high precision, high directionality, and wide material adaptability. Related technologies, such as focused ion beam etching (FIBE) to repair surface defects such as etched pits caused by inductively coupled plasma surface micromachining, suffer from surface uniformity issues caused by uneven ion beam current and scattering of impurity gas molecules.

[0003] In related technologies, ion beam etching is based on a physical bombardment process, which makes it difficult to achieve deep etching of the wafer. Over-etching is prone to occur when process parameters are not well controlled. At the same time, the ion beam energy distribution is uneven and the focusing and collimation effect is poor, making it difficult to accurately control the planar uniformity. Summary of the Invention

[0004] The present application provides an ion beam etching device and a parameter analysis method to at least solve the problems of low etching efficiency and poor uniformity in related technologies.

[0005] The present application provides an ion beam etching device, comprising:

[0006] Film forming vacuum chamber, etching ion source, sample carrier, electric field generating device and magnetic field generating device;

[0007] The etching ion source is fixedly arranged inside the film forming vacuum chamber, and is used to generate an etching ion beam under vacuum conditions;

[0008] The sample carrier is fixedly arranged inside the film forming vacuum chamber, and is located directly below the emission end of the etching ion source;

[0009] The electric field generating device is fixed at the bottom of the sample carrier device, and is used to generate an electric field to exert an electric field force on the ion beam to change the direction of ion movement;

[0010] The magnetic field generating device is mounted on the outside of the film forming vacuum chamber. The magnetic field generating device is used to work together with the electric field generating device to change the movement direction and trajectory of the ions. The center height of the magnetic field generating device is at the same level as the sample carrier or lower than the level of the sample carrier.

[0011] The present application also provides an ion beam etching parameter analysis method for adjusting parameters of the above-mentioned ion beam etching device, comprising:

[0012] Obtain environmental parameters and physical parameters. Environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters. Physical parameters include electric field parameters, magnetic field parameters, and current form.

[0013] Analyze environmental parameters and physical parameters to obtain physical field distribution;

[0014] The ion motion is simulated based on the physical field distribution and background gas parameters to obtain the ion's spatial motion trajectory;

[0015] Analyze the spatial potential difference and the spatial current formed by ions per unit area per unit time through spatial motion trajectory and sample parameters;

[0016] The space current and space potential difference are compared with their corresponding preset current threshold and preset potential difference threshold respectively. When the space current is less than the preset current threshold and / or the space potential difference is greater than the preset potential difference threshold, the physical parameters are adjusted and the step of analyzing the environmental parameters and physical parameters to obtain the physical field distribution is returned until the space current is greater than or equal to the preset current threshold and the space potential difference is less than the preset potential difference threshold, so as to obtain the target physical parameters.

[0017] The present application also provides an ion beam etching parameter analysis device, comprising:

[0018] An acquisition module is used to acquire environmental parameters and physical parameters. Environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters; physical parameters include electric field parameters, magnetic field parameters, and current form.

[0019] Physical field analysis module, used to analyze environmental parameters and physical parameters to obtain physical field distribution;

[0020] A simulation module is used to simulate the motion of ions based on the physical field distribution and background gas parameters to obtain the spatial motion trajectory of ions;

[0021] The sample analysis module is used to analyze the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and sample parameters;

[0022] An adjustment module is used to compare the space current and space potential difference with their corresponding preset current thresholds and preset potential difference thresholds respectively. When the space current is less than the preset current threshold and / or the space potential difference is greater than the preset potential difference threshold, the physical parameters are adjusted and the step of analyzing the environmental parameters and the physical parameters to obtain the physical field distribution is returned until the space current is greater than or equal to the preset current threshold and the space potential difference is less than the preset potential difference threshold, thereby obtaining the target physical parameters.

[0023] The present application also provides an electronic device, comprising: a memory for storing a computer program; and a processor for implementing the steps of any one of the above-mentioned ion beam etching parameter analysis methods when executing the computer program.

[0024] The present application also provides a computer-readable storage medium, in which a computer program is stored. When the computer program is executed by a processor, the steps of any one of the above-mentioned ion beam etching parameter analysis methods are implemented.

[0025] The present application also provides a computer program product, including a computer program, which implements the steps of any of the above-mentioned ion beam etching parameter analysis methods when executed by a processor.

[0026] Through this application, the electric field generated by the electric field generating device can exert an electric field force on the ion beam, directly changing the direction of ion movement, so that the ions act more accurately on the sample surface; at the same time, the magnetic field generating device works in conjunction with the electric field generating device to further regulate the movement trajectory of the ions and optimize the distribution of the ion beam on the sample surface. In addition, the ion beam etching parameter analysis method obtains environmental parameters and physical parameters to analyze the physical field distribution, and simulates the ion movement based on this. According to the spatial potential difference and the spatial current formed by the ions per unit area per unit time, the electric field, magnetic field and other physical parameters are dynamically adjusted to ensure the efficiency of the ion beam acting on the sample. Therefore, the technical problems of low efficiency and poor uniformity of ion beam etching can be solved, and the etching efficiency can be improved, the etching uniformity can be controlled within a higher precision range, and the etching rate can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0028] Figure 1 A schematic structural diagram of an ion beam etching device provided in an embodiment of the present application;

[0029] Figure 2 A schematic structural diagram of the insulation protection structure provided in an embodiment of the present application;

[0030] Figure 3 A schematic diagram of a flow chart of an ion beam etching parameter analysis method provided in an embodiment of the present application;

[0031] Figure 4 A schematic structural diagram of the ion beam etching parameter analysis device provided in an embodiment of the present application;

[0032] Figure 5 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0033] The above drawings include the following reference numerals:

[0034] 101 - film forming vacuum chamber; 102 - etching ion source; 103 - sample carrier; 104 - electric field generator; 105 - magnetic field generator; 106 - insulation protection structure;

[0035] 1031-Central axis;

[0036] 1051-electromagnetic coil; 1052-support cylinder; 1053-fixed seat;

[0037] 1061-Insulation gasket; 1062-Insulation shell. DETAILED DESCRIPTION

[0038] The following will be combined with the accompanying drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0039] It should be noted that, in the description of this application, the terms "comprises," "includes," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. The terms "first," "second," etc., in this application are used to distinguish similar objects, and are not used to describe a particular order or sequence.

[0040] Terms such as "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate positions or locations based on those shown in the accompanying drawings. These terms are intended to facilitate the description of the present application and simplify the description. They are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation, and are not to be construed as limiting the present application. Terms such as "mounted," "connected," and "connected" should be broadly construed, and may include, for example, fixed, removable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; and internal communication between two components. Terms such as "parallel," "perpendicular," and "equal" encompass the conditions described and conditions similar to the conditions described, provided that the range of the similar conditions is within an acceptable range of deviation, as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes both absolute parallelism and approximate parallelism, where the acceptable deviation range for approximate parallelism may be, for example, within 5°; "perpendicular" includes both absolute perpendicularity and approximate perpendicularity, where the acceptable deviation range for approximate perpendicularity may also be, for example, within 5°. "Equal" includes both absolute equality and approximate equality, where the acceptable deviation range for approximate equality may be, for example, that the difference between the two is less than or equal to 5% of either. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0041] The purpose of this application is to solve the technical problems of low efficiency and poor uniformity of ion beam etching, and an ion beam etching device and parameter analysis method are proposed. The ion beam etching device provides an etching environment through a film-forming vacuum chamber, and the etching ion source generates an ion beam. The electric field generating device is combined with the sample carrier to change the direction of ion movement. The magnetic field generating device is set on the outside of the vacuum chamber and cooperates with the electric field to further regulate the ion movement trajectory and improve the etching uniformity and etching efficiency. The ion beam etching parameter analysis method obtains the environment and physical parameters, obtains the physical field distribution through analysis and calculation, and then simulates the ion movement trajectory. Finally, it analyzes the spatial current and potential difference based on the trajectory and sample parameters, and compares them with the preset threshold value to dynamically adjust the physical parameters, and finally achieves the improvement of ion beam etching efficiency and uniformity.

[0042] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0043] Figure 1 Schematic diagram of the cross-sectional structure of the ion beam etching device provided in the embodiment of the present application; Figure 1 As shown, this embodiment provides an ion beam etching device, including: a film forming vacuum chamber 101, an etching ion source 102, a sample carrier 103, an electric field generating device 104 and a magnetic field generating device 105;

[0044] The etching ion source 102 is fixedly disposed inside the film forming vacuum chamber 101 and is used to generate an etching ion beam under vacuum conditions;

[0045] The sample carrier 103 is fixedly disposed inside the film forming vacuum chamber 101 and is located directly below the emission end of the etching ion source 102;

[0046] The electric field generating device 104 is fixed to the bottom of the sample carrier 103. The electric field generating device 104 is used to generate an electric field to exert an electric field force on the ion beam to change the direction of ion movement.

[0047] The magnetic field generating device 105 is mounted on the outside of the film forming vacuum chamber 101. The magnetic field generating device 105 is used to work together with the electric field generating device 104 to change the movement direction and trajectory of ions. The center height of the magnetic field generating device 105 is at the same level as the sample carrier 103 or lower than the level of the sample carrier 103.

[0048] Specifically, the film-forming vacuum chamber 101 is used to provide a high vacuum environment (such as 0.01 Pa), which reduces the probability of collision between ions and gas molecules, reduces the scattering of ion beams by gas molecules, improves the energy utilization rate and etching directionality of the ion beam, and ensures the accuracy of the etching process.

[0049] The etching ion source 102 generates a high-energy ion beam (e.g., Ar+) that bombards the sample surface to remove material. The higher the acceleration voltage, the greater the kinetic energy the ions acquire, and the correspondingly higher etching rate. The etching ion source 102 can be secured to the top plate of the film-forming vacuum chamber 101 using an existing hoisting structure, with its ion-emitting end facing the sample carrier 103 below. Alternatively, the source can be secured to the side panels of the film-forming vacuum chamber 101 using existing brackets or other means. This is not a specific limitation and can be adjusted based on actual needs.

[0050] The sample carrier 103 is used to carry the sample to be etched.

[0051] The electric field generator 104 can generate a direct current or pulsed electric field to change the trajectory of ions through the electric field force. The pulsed electric field can be adjusted by duty cycle and frequency to achieve dynamic ion trajectory control.

[0052] The magnetic field generating device 105 regulates the movement of ions by generating a controllable magnetic field in coordination with the electric field.

[0053] The ion source emits an ion beam vertically downward, and the sample carrier device 103 is located directly below to ensure vertical incidence of the ion beam; the electric field device is integrated with the sample carrier device 103, and the magnetic field device surrounds the vacuum chamber to form an orthogonal electromagnetic field configuration; the electric field can accelerate ion energy, and the magnetic field can increase plasma density, effectively improving etching power; and the electric field can correct the ion angle, and the magnetic field can constrain the spiral trajectory. The combined effect of the electric field and the magnetic field improves etching uniformity.

[0054] The center height of the magnetic field generating device 105 is at the same level as the sample carrier 103 or lower than the sample carrier 103, which can effectively avoid the magnetic field interference problem that may occur when the magnetic field generating device 105 is higher than the sample carrier 103, prevent the ion beam from being disordered before reaching the sample due to uneven distribution of magnetic field lines, reduce ion beam deviation, divergence and other phenomena, ensure that the ion beam can act on the sample surface according to the expected path, and improve etching accuracy.

[0055] An ion beam etching device provided in an embodiment of the present application provides a stable vacuum environment through a film-forming vacuum chamber 101, an etching ion source 102 generates a high-energy ion beam, and a sample carrier 103 ensures vertical incidence of the ion beam; an electric field generating device 104 and a magnetic field generating device 105 work together to adjust the field strength and direction to optimize the ion beam distribution, thereby effectively improving etching efficiency and etching uniformity.

[0056] In some optional embodiments, the sample carrier 103 is disc-shaped, a central shaft 1031 is fixed to the bottom of the film-forming vacuum chamber 101 , and the sample carrier 103 is rotatably connected to the film-forming vacuum chamber 101 via the central shaft 1031 .

[0057] Specifically, during the etching process, a motor or other driving component can be used to drive the central axis 1031 to rotate, thereby causing the disc-shaped sample carrier 103 to perform circular motion around the central axis 1031. The ion beam is incident vertically downward. As the sample carrier 103 rotates, each point on the sample surface sequentially passes through the ion beam bombardment area, and the principle of relative motion is used to achieve uniform coverage of the sample surface by the ion beam.

[0058] The rotatable sample carrier 103 can allow the sample surface to receive more uniform bombardment during the ion beam etching process, avoiding local over-etching or under-etching problems caused by the uneven distribution of the ion beam itself; the action time of the ion beam on the sample surface can be adjusted by controlling the rotation speed, thereby flexibly controlling the etching depth; the disc-shaped structure can make full use of the internal space of the vacuum chamber, adapt to circular samples of different sizes, and ensure the stability and balance of the sample during rotation.

[0059] The sample carrier 103 is rotatably connected to the film-forming vacuum chamber 101 via the central axis 1031, which can significantly improve etching uniformity and achieve higher etching accuracy compared to traditional fixed carrier methods; by adjusting the rotation speed, precise control of the etching process can be achieved, the controllability of the etching process can be improved, and diverse etching needs can be met; the disc shape can be adapted to a variety of circular specifications of samples, expanding the application range of the device; at the same time, the stable rotation connection reduces the etching error caused by sample shaking, effectively improving the etching yield and etching uniformity.

[0060] In some optional embodiments, such as Figure 2 As shown, it also includes an insulating protection structure 106, which includes an insulating gasket 1061 and an insulating shell 1062. The insulating gasket 1061 is arranged between the electric field generating device 104 and the sample carrier 103; the insulating shell 1062 is U-shaped, and the electric field generating device 104 is arranged in the U-shaped groove of the insulating shell 1062. The top of the insulating shell 1062 is sealed and fixed to the insulating gasket 1061 to form a wrapping structure.

[0061] Specifically, an insulating gasket 1061 is disposed between the electric field generator 104 and the sample carrier 103 to form a planar insulating isolation layer. Insulating gasket 1061 can be made of, for example, polytetrafluoroethylene (PTFE), mica, or ceramic, depending on actual needs, without specific limitation. Insulating gasket 1061 can be secured to the electric field generator 104 and the sample carrier 103 using insulating bolts or adhesive bonding.

[0062] Insulating housing 1062 is a U-shaped, upward-opening, groove-shaped enclosure that wraps around the sides and bottom of electric field generator 104. Its top end is sealed to insulating gasket 1061. A vacuum seal between the top of insulating housing 1062 and insulating gasket 1061 can be achieved using a fluororubber sealing ring or metal vacuum seal welding (e.g., electron beam welding). Depending on actual needs, insulating housing 1062 can be made of, for example, engineering plastics (e.g., PEEK, Polyetheretherketone) or epoxy resin composite materials.

[0063] The insulating protective structure 106 isolates the electric field generator 104 from the sample carrier 103, preventing high-voltage electric field leakage to the carrier and avoiding equipment short-circuit failures. It also blocks the secondary electrons generated during ion beam etching from flowing back to the electric field power supply, protecting the power supply from transient current surges. The low dielectric constant of the insulating material (for example, PTFE has a dielectric constant of ε≈2.1) reduces electric field distortion, ensuring a uniform electric field force on the ion beam, preventing ion trajectory deviation due to electric field leakage, and improving etching uniformity.

[0064] In some optional embodiments, the magnetic field generating device 105 includes: an electromagnetic coil 1051, a support cylinder 1052 and a fixing seat 1053;

[0065] The support tube 1052 is a hollow structure and is mounted on the outside of the film-forming vacuum chamber 101; the electromagnetic coil 1051 is a hollow, parallel-wound annular coil and is arranged on the outside of the support tube 1052; a fixed seat 1053 is provided under the support tube 1052, and the electromagnetic coil 1051 is fixed to the outside of the vacuum chamber through the support tube 1052 and the fixed seat 1053.

[0066] Specifically, when current passes through the circular electromagnetic coil 1051 wound in parallel, a magnetic field is generated in the space around it; by adjusting the coil current, the magnetic field strength can be changed, thereby regulating the magnitude of the Lorentz force exerted on the ion beam in the magnetic field, thereby achieving control of the ion motion trajectory.

[0067] The film-forming vacuum chamber 101 is a cylindrical structure. The diameter of the support tube 1052 is larger than the diameter of the film-forming vacuum chamber 101, and is arranged concentrically with the film-forming vacuum chamber 101 and sleeved on the outside of the film-forming vacuum chamber 101, for fixing the position of the electromagnetic coil 1051 to ensure that the electromagnetic coil 1051 will not be deformed or displaced due to the electromagnetic force under high magnetic field strength; at the same time, the hollow support tube 1052 helps the electromagnetic coil 1051 to dissipate heat, extend the service life of the electromagnetic coil 1051, and ensure the stable operation of the magnetic field generating device 105.

[0068] The support tube 1052 and the fixing base 1053 can be fixed together by bolts, welding, or other methods. The fixing base 1053 ensures that the support tube 1052 and the electromagnetic coil 1051 are securely mounted outside the vacuum chamber, preventing the magnetic field generating device 105 from shifting due to factors such as vibration during operation, thereby ensuring the stability and consistency of the magnetic field distribution. The height of the fixing base 1053 can be adjusted as needed.

[0069] In some optional embodiments, the wire diameter of the electromagnetic coil 1051 is 0.5 mm to 2 mm, and the winding density is 10 to 50 turns / cm; the height of the support tube 1052 is 50 mm to 100 mm, and the current range of the electromagnetic coil 1051 is 0 to 20 A.

[0070] Specifically, wire diameter can affect current carrying capacity and heating efficiency. The thicker the wire diameter, the lower the resistance, and it can pass a larger current (matching the 0-20A range), avoiding overload heating. A thicker wire diameter (such as 2mm) is suitable for high current (20A) conditions, reducing coil temperature rise and ensuring long-term stable operation; a thinner wire diameter (such as 0.5mm) can increase the winding density, generating sufficient magnetic field strength even at low currents, while taking into account flexibility. By limiting the wire diameter range, the magnetic field strength and heat dissipation requirements can be effectively balanced, avoiding excessive resistance and severe heating due to too thin a wire diameter, or insufficient winding density and limited magnetic field strength due to too thick a wire diameter.

[0071] The magnetic field strength is proportional to the number of coil turns. The higher the winding density, the more turns per unit length, and the stronger the magnetic field. High winding density combined with high current produces a strong magnetic field; low winding density combined with low current is suitable for lower magnetic field strengths, reducing energy loss. A wide range of winding densities allows for adjustable magnetic field strength over a wide range to meet the requirements of different etching materials and processes. For example, when etching silicon wafers and metal films, the winding density and current can be adjusted to match the ion beam control accuracy to varying degrees.

[0072] By adjusting the current, the magnetic field strength can be dynamically controlled, enabling precise control of the ion beam trajectory. When the current is 0A, there is no magnetic field, making it suitable for etching processes that do not require magnetic field assistance. At 20A, a strong magnetic field is generated, effectively controlling the ion beam offset angle and improving the etching line width accuracy. The wide current adjustment range provides the device with flexible adaptability, making it compatible with etching scenarios with different precision requirements. For example, high-demand etching requires a strong 20A magnetic field to ensure nanometer-level line uniformity, while conventional microstructure etching can meet etching requirements with a 5-10A magnetic field.

[0073] The diameter of the support tube 1052 is larger than the diameter of the film-forming vacuum chamber 101, and is coaxially arranged on the periphery of the film-forming vacuum chamber 101. The height of the support tube 1052 directly determines the axial winding length of the electromagnetic coil 1051: the higher the height, the wider the range of action of the magnetic field, and the ion beam will be affected by the magnetic field earlier and over a larger area in the entire path from the etching ion source 102 to the sample carrier 103, making it easier to adjust the deflection angle and focusing effect of the ion beam in a larger space. A low height will make the range of action of the magnetic field more concentrated, and the ion beam will only be significantly affected by the magnetic field when it approaches the sample, which is suitable for scenarios where a local strong magnetic field is required to control the trajectory of the ion beam. The height can be adjusted according to specific needs.

[0074] In some optional embodiments, the electric field generating device 104 is a voltage-stabilized power supply, and the current is in the form of direct current or pulse current.

[0075] Specifically, a voltage-regulated power supply converts input power (such as AC) into constant-voltage DC through filtering and feedback control (e.g., PID regulation). The electric field generated by DC is a static electric field. During the film formation or etching process, this constant electric field exerts a continuous force on charged ions, causing them to move along a fixed trajectory (e.g., perpendicular to the sample surface), ensuring the directionality of deposition / etching. It also eliminates static charges accumulated on the sample surface, preventing uneven film deposition due to charge repulsion. The static electric field is highly stable and can operate continuously for extended periods of time.

[0076] The regulated power supply generates periodic pulse current through pulse width modulation. The pulse current produces an alternating electric field, and the electric field strength changes periodically with time. Pulsed deposition can be achieved by instantaneously accelerating / decelerating ions by the pulse electric field and controlling the time interval for ions to reach the sample surface. The intermittent working mode of the pulse electric field (such as a duty cycle of 50%) can reduce the temperature rise on the sample surface and avoid material phase changes caused by high temperature.

[0077] In some optional embodiments, when the current is in the form of direct current, the DC voltage amplitude is 0 ~ -50V, when the current is in the form of pulse current, the pulse voltage amplitude is 0 ~ -200V, the voltage duty cycle is 0 ~ 60%, and the frequency is 0 ~ 30000 Hz.

[0078] Specifically, a DC voltage is generated through a regulated power supply to generate a constant electric field. The electric field strength is proportional to the voltage amplitude. When the voltage is negative (the sample end is grounded), the electric field is directed from the sample toward the electric field generator 104, forming an accelerating electric field directed toward the sample. The polarity of the voltage (negative value) determines the direction of the electric field. Negative voltage accelerates positively charged ions (such as Ar⁺) toward the sample and repels negatively charged particles (such as electrons), achieving ion beam screening.

[0079] The instantaneous electric field strength of pulsed current can reach four times that of DC mode. For example, with a 10mm plate spacing, the electric field strength ranges from 0 to 20V / mm. However, the average electric field strength is modulated by the duty cycle: Eavg = Emax × duty cycle. The duty cycle controls the duration of high voltage application per unit time. For example, a 60% duty cycle (10kHz frequency) means -200V is applied for 60μs out of every 100μs, and 0V for 40μs. The frequency determines the pulse period (33μs to ∞), which affects the interval between ion beam pulses.

[0080] By coordinating the voltage amplitude, duty cycle, and frequency, the control accuracy of the interaction between ions and materials can be effectively improved and damage deposition can be reduced.

[0081] Figure 3 A flow chart of the ion beam etching parameter analysis method provided in the embodiment of the present application is shown in FIG. Figure 3As shown, an embodiment of the present application provides an ion beam etching parameter analysis method for adjusting parameters of the above-mentioned ion beam etching device. The method is described in detail as follows:

[0082] S301: Acquire environmental parameters and physical parameters. The environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters; the physical parameters include electric field parameters, magnetic field parameters, and current form.

[0083] Specifically, vacuum gauges (such as Pirani gauges), gas mass flow meters, spectroscopic ellipsometers, and other equipment are used to collect real-time data on vacuum level (0.01 Pa level), background gas composition (such as Ar gas flow), and sample material parameters (such as resistivity). Physical parameters such as the voltage and current of the electric / magnetic field power supply are also read simultaneously, providing a data foundation for subsequent analysis.

[0084] S302: Analyze environmental parameters and physical parameters to obtain physical field distribution.

[0085] Specifically, the finite element method is used to generate electromagnetic field distribution training data. A residual-connected neural network is used to learn normalized parameters, establishing a nonlinear mapping model from parameters to field distributions to achieve rapid prediction. By quantifying the field intensity variation along the ion beam path, the accuracy of ion trajectories is ensured, improving the efficiency and accuracy of physical field calculations.

[0086] S303: Performing motion simulation on the ions based on the physical field distribution and background gas parameters to obtain the spatial motion trajectory of the ions.

[0087] Specifically, through simulation analysis, the trajectory change law of the ion beam during the transmission process is obtained, which significantly reduces the computational complexity while ensuring physical authenticity, achieves high-precision trajectory prediction, and provides a basis for etching uniformity analysis.

[0088] S304: Analyze the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and sample parameters.

[0089] Specifically, by calculating the spatial potential difference on the sample surface and the current density distribution per unit area per unit time, the etching rate and charge accumulation effect are quantified to reflect the etching uniformity and etching efficiency.

[0090] S305: Compare the spatial current and spatial potential difference with their corresponding preset current threshold and preset potential difference threshold respectively. When the spatial current is less than the preset current threshold and / or the spatial potential difference is greater than the preset potential difference threshold, adjust the physical parameters and return to the step of analyzing the environmental parameters and physical parameters to obtain the physical field distribution, until the spatial current is greater than or equal to the preset current threshold and the spatial potential difference is less than the preset potential difference threshold, and the target physical parameters are obtained.

[0091] Specifically, by setting thresholds to continuously iteratively optimize parameters, dynamically adjusting physical parameters and repeating the simulation process, the system quickly converges to the optimal parameter combination, ensuring that the target physical parameters meet the requirements of etching efficiency and uniformity.

[0092] The definition of the above residual connection neural network: The residual connection neural network is a deep neural network architecture that solves the gradient vanishing / exploding problem in traditional deep network training by introducing residual blocks, allowing the network to be trained deeper, thereby improving the model's expressiveness.

[0093] The ion beam etching parameter analysis method provided in this embodiment ensures the comprehensiveness and accuracy of the analysis through the process of parameter acquisition, physical field modeling, trajectory simulation, indicator quantification and optimization, effectively improves the etching uniformity and etching efficiency, reduces dependence on manual experience, and reduces trial and error costs.

[0094] This embodiment describes in detail the process of analyzing environmental parameters and physical parameters to obtain physical field distribution in the above embodiment. The specific implementation of this process includes the following steps:

[0095] Step a1: Normalize the physical parameters to obtain standard parameter data.

[0096] Specifically, normalization processing can balance the weights of various parameters during subsequent neural network training, thereby improving the convergence speed and stability of the model.

[0097] Step a2: Obtain a target mesh partitioning model from a preset mesh partitioning model database according to environmental parameters.

[0098] Specifically, according to the shape, size and range of the etching area of ​​the vacuum chamber, an appropriate grid division model is selected from the preset grid division model database. For example, for a vacuum chamber with a regular shape, a Cartesian grid can be preferably selected, and for a complex shape, an unstructured grid can be selected.

[0099] Step a3: Discretize the vacuum space into grids based on a preset grid division model and vacuum chamber parameters to obtain a plurality of grid units.

[0100] Specifically, the finite element method is used to divide the continuous vacuum space into discrete grids. The grid density is determined by the vacuum chamber parameters. The higher the vacuum level, the longer the ion free path, and the larger the grid size can be. Computational accuracy is ensured by dividing the grid into regular or irregular cells, and ensuring that the grid density is higher in the target area for ion beam etching, such as near the sample carrier, than in other areas.

[0101] Step a4: Set the grid node coordinates for each grid unit to obtain the spatial frame;

[0102] Specifically, by converting complex three-dimensional space into discrete nodes that can be processed by computers, it is easier to numerically calculate the strength and direction of the electromagnetic field at all nodes. Through adaptive meshing, the spatial resolution is effectively improved, thereby improving the accuracy of subsequent physical field distribution.

[0103] Step a5: Analyze the boundary range of the electric field and the magnetic field in the vacuum space according to the physical parameters, and obtain the boundary value of the physical field at the boundary of the space frame.

[0104] Specifically, based on the installation position, shape and parameter settings of the electric field generating device and the magnetic field generating device, the boundary range of the electric field and the magnetic field in the vacuum space is determined, and the value of the physical field at the boundary of the vacuum chamber is clarified, such as the normal component of the electric field intensity at the insulating boundary is 0.

[0105] Step a6: Perform spatial mapping between the boundary range of the spatial frame and the boundary value to obtain the constraint range of the physical field.

[0106] Specifically, based on the position and parameters of the electric field generating device and the magnetic field generating device, combined with the boundary conditions of the vacuum chamber, the distribution range of the physical field is combined with the actual vacuum space structure to obtain the actual constraint range of the physical field in the vacuum space and determine the effective action area of ​​the physical field.

[0107] Step a7: Input the standard parameter data and constraint range into the preset residual connection neural network model to obtain the physical field distribution.

[0108] Specifically, the residual connection neural network solves the gradient degradation problem of deep networks through a residual block structure. It takes normalized parameters and boundary conditions as input, learns the electromagnetic field distribution law through multiple layers of convolution and activation functions, and outputs the electric field intensity E(x, y, z) and magnetic field intensity B(x, y, z) of each grid node, thus achieving rapid prediction of the electromagnetic field distribution. Before performing the model calculation, it also includes checking the parameter settings of the preset residual connection neural network model, including the number of network layers, number of neurons, activation function type, etc. According to the specific parameters of the current etching and calculation requirements, the model parameters are fine-tuned and optimized to ensure that the model can accurately calculate the physical field distribution. After the model calculation, it also includes preliminary verification of the physical field distribution data output by the residual connection neural network model. By comparing and analyzing with known calculation results or historical experimental data, the rationality and accuracy of the calculation results are checked. If there are large deviations, the parameter input and model configuration are rechecked, and corrections are made before recalculation.

[0109] This embodiment uses normalization to balance parameter weights, providing a data foundation for neural network training and ensuring stable and rapid model convergence. Adaptive meshing is performed based on vacuum chamber parameters, converting complex spaces into calculable discrete nodes, effectively improving computational efficiency and spatial resolution, and enhancing the accuracy of physical field calculations. Spatial mapping is used to determine the physical field constraint range, eliminating invalid computational areas, reducing the amount of computation while enhancing the reliability of the results. A residual connection neural network is used to learn the distribution patterns of complex electromagnetic fields and predict the electromagnetic field distribution. This process effectively improves the efficiency of physical field analysis while ensuring the accuracy and stability of the calculation results.

[0110] This embodiment describes in detail the process of obtaining the spatial motion trajectory of ions by simulating the motion of ions based on the physical field distribution and background gas parameters in the above embodiment. The specific implementation of this process includes the following steps:

[0111] Step b1: Discrete the ions into macroparticles containing multiple ions.

[0112] Specifically, aggregating actual ions into macroparticles can reduce the amount of calculation, lower the computational complexity, and improve computational efficiency while retaining the characteristics of the ion group.

[0113] Step b2: Assign coordinates to the macroparticles according to the physical field distribution to obtain a macroparticle dataset with position labels.

[0114] Specifically, by establishing a spatial correspondence between macroparticles and physical fields, the initial coordinate assignment error is reduced, providing an accurate starting point for subsequent trajectory calculations.

[0115] Step b3: Analyze the velocity and position of the macroparticle within multiple preset time steps based on the electromagnetic field intensity at each point in the space in the physical field distribution to obtain the initial motion trajectory.

[0116] Specifically, within each time step, acceleration is calculated according to the Lorentz force formula, and velocity and position are updated using a numerical integration algorithm. The electromagnetic field strength is derived from physical field distribution data. By simulating the motion trajectory of macroparticles in the electromagnetic field, the ion beam trajectory offset is predicted, and the positional deviation of ions arriving at the sample surface is accurately predicted, providing reliable data for etching uniformity analysis.

[0117] Lorentz force formula:

[0118] F=q(E+v×B)

[0119] Among them, F is the Lorentz force, q is the charge of the charged particle, E is the electric field intensity vector, v is the velocity vector of the charged particle, and B is the magnetic induction intensity vector.

[0120] Step b4: Inputting the initial motion trajectory and background gas parameters into a preset collision model, the initial motion trajectory is corrected according to the collision probability and cross-section parameters to obtain the spatial motion trajectory.

[0121] Specifically, the collision probability between macroparticles and background gas molecules is analyzed based on the Monte Carlo collision model, and the velocity direction and energy are corrected according to the law of conservation of momentum after the collision, thereby improving the accuracy of the actual movement of the ions and making the corrected trajectory more accurate.

[0122] This embodiment improves the efficiency of ion trajectory simulation by mapping macro-particle discretization with physical field coordinates; at the same time, it introduces a Monte Carlo collision model to quantify the effects of background gas molecules, dynamically corrects the velocity and energy distribution, restores the electromagnetic-collision coupling dynamics, and improves the accuracy of trajectory prediction.

[0123] This embodiment describes in detail the process of analyzing the spatial potential difference and the spatial current formed by ions per unit area per unit time by using the spatial motion trajectory and sample parameters in the above embodiment. The specific implementation of this process includes the following steps:

[0124] Step c1: Analyze the number of ions passing through a unit area of ​​the sample surface per unit time according to the spatial motion trajectory to obtain the space current formed by the ions per unit area per unit time.

[0125] Specifically, by analyzing the number of ions passing through a unit area of ​​the sample per unit time and combining it with the charge of a single ion, the spatial current density formed by the ions can be calculated, and the ion motion trajectory can be converted into a quantifiable current parameter.

[0126] Step c2: Obtain the distribution information of ions on the sample surface based on the spatial motion trajectory and sample parameters.

[0127] Specifically, the impact density of ions on the sample surface is calculated using a spatial distribution algorithm to obtain the distribution characteristics of ions on the sample surface.

[0128] Step c3: Calculate the potential information generated by the interaction between ions and the sample surface at different positions of the sample based on the distribution information and the material electrical properties in the sample parameters.

[0129] Specifically, the sample parameters include the electrical properties of the material, the composition and structure of the sample material, and the geometric parameters. The Poisson equation can be used to solve the potential change caused by charge accumulation on the sample surface and quantify the potential change on the sample surface caused by ion bombardment.

[0130] Step c4: Calculate the spatial potential difference on the sample surface based on the point information.

[0131] Specifically, the spatial potential difference on the sample surface is obtained by extracting the potential value of each point on the sample surface grid node and calculating the difference between the maximum and minimum potential values ​​or the root mean square error; the spatial potential difference is used as a quantitative evaluation index of etching uniformity to reflect the consistency of ion bombardment energy on the sample surface.

[0132] This embodiment quantifies the etching rate through multi-parameter collaborative analysis to obtain the influence of surface potential distribution on etching uniformity, providing data support for physical parameter optimization of ion beam etching, thereby helping to improve the accuracy and reliability of parameter control.

[0133] Through the description of the above implementation methods, those skilled in the art can clearly understand that the method according to the above embodiment can be implemented by means of software plus the necessary general hardware platform, and of course it can also be implemented by hardware, but in many cases the former is a better implementation method.

[0134] Figure 4 This is a schematic diagram of the structure of the ion beam etching parameter analysis device provided in the embodiment of the present application. Figure 4 As shown, the embodiment of the present application further provides an ion beam etching parameter analysis device, the ion beam etching parameter analysis device 40, including: an acquisition module 401, a physical field analysis module 402, a simulation module 403, a sample analysis module 404, and an adjustment module 405.

[0135] Acquisition module 401, for acquiring environmental parameters and physical parameters, the environmental parameters including vacuum chamber parameters, background gas parameters and sample parameters; the physical parameters including electric field parameters, magnetic field parameters and current form;

[0136] A physical field analysis module 402 is used to analyze environmental parameters and physical parameters to obtain physical field distribution;

[0137] A simulation module 403 is used to simulate the motion of ions based on the physical field distribution and background gas parameters to obtain the spatial motion trajectory of the ions;

[0138] The sample analysis module 404 is used to analyze the spatial potential difference and the spatial current formed by ions per unit area per unit time based on the spatial motion trajectory and sample parameters;

[0139] The adjustment module 405 is used to compare the space current and the space potential difference with their corresponding preset current thresholds and preset potential difference thresholds respectively. When the space current is less than the preset current threshold and / or the space potential difference is greater than the preset potential difference threshold, the physical parameters are adjusted and the step of analyzing the environmental parameters and the physical parameters to obtain the physical field distribution is returned until the space current is greater than or equal to the preset current threshold and the space potential difference is less than the preset potential difference threshold, thereby obtaining the target physical parameters.

[0140] In one possible design, the physical field analysis module 402 is specifically configured to:

[0141] Normalize the physical parameters to obtain standard parameter data;

[0142] The vacuum space is discretized into grids based on the preset grid division model and vacuum chamber parameters, and the space frame is constructed by setting the grid node coordinates;

[0143] The boundary range of the space frame is spatially mapped to the electric field and magnetic field to obtain the constraint range of the physical field;

[0144] The standard parameter data and constraint range are input into the preset residual connection neural network model to obtain the physical field distribution.

[0145] In one possible design, the simulation module 403 is further configured to:

[0146] Discretize ions into macroparticles containing multiple ions;

[0147] Assign coordinates to macro particles according to the physical field distribution to obtain a macro particle dataset with position labels;

[0148] Based on the electromagnetic field intensity at each point in the physical field distribution, the macro particle velocity and position within multiple preset time steps are analyzed to obtain the initial motion trajectory;

[0149] By inputting the initial motion trajectory and background gas parameters into a preset collision model, the initial motion trajectory is corrected according to the collision probability and cross-section parameters to obtain the spatial motion trajectory.

[0150] In one possible design, the sample analysis module 404 is specifically configured to:

[0151] The number of ions passing through a unit area of ​​the sample surface per unit time is analyzed based on the spatial motion trajectory, and the space current formed by the ions per unit area per unit time is obtained.

[0152] The distribution information of ions on the sample surface is obtained based on the spatial motion trajectory and sample parameters.

[0153] The potential information generated by the interaction between ions and the sample surface at different positions of the sample is calculated based on the distribution information and the material electrical properties in the sample parameters.

[0154] The spatial potential difference on the sample surface is calculated based on the point information.

[0155] For the description of the features in the embodiment corresponding to the ion beam etching parameter analysis device, reference can be made to the relevant description of the embodiment corresponding to the ion beam etching parameter analysis method, which will not be repeated here.

[0156] Figure 5 This is a schematic diagram of the structure of the electronic device provided in the embodiment of the present application. Figure 5 As shown, the electronic device 50 provided in this embodiment includes: at least one processor 501 and a memory 502. Optionally, the electronic device 50 further includes a communication component 503. The processor 501, the memory 502 and the communication component 503 are connected via a bus.

[0157] In a specific implementation process, at least one processor 501 executes the computer-executable instructions stored in the memory 502 , so that the at least one processor 501 executes the above-mentioned ion beam etching parameter analysis method embodiment.

[0158] The specific implementation process of the processor 501 can be found in the above method embodiment. Its implementation principle and technical effects are similar and will not be repeated here in this embodiment.

[0159] In the above embodiments, it should be understood that the processor may be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), etc. A general-purpose processor may be a microprocessor or any conventional processor. The steps of the method disclosed in the application may be directly executed by a hardware processor or by a combination of hardware and software modules within the processor.

[0160] The memory may include random access memory (RAM) and may also include non-volatile memory (NVM), such as at least one disk storage.

[0161] A bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. Buses can be categorized as address buses, data buses, and control buses. For ease of illustration, the buses in the drawings of this application are not limited to just one bus or just one type of bus.

[0162] An embodiment of the present application further provides a computer-readable storage medium, in which a computer program is stored, wherein the computer program is configured to execute the steps of any of the above-mentioned ion beam etching parameter analysis method embodiments when run.

[0163] In an exemplary embodiment, the computer-readable storage medium may include, but is not limited to, various media that can store computer programs, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk, or an optical disk.

[0164] An embodiment of the present application further provides a computer program product, which includes a computer program. When the computer program is executed by a processor, the steps in any of the above-mentioned ion beam etching parameter analysis method embodiments are implemented.

[0165] An embodiment of the present application also provides another computer program product, including a non-volatile computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, it implements the steps in any of the above-mentioned ion beam etching parameter analysis method embodiments.

[0166] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the above description has generally described the components and steps of each example according to their functions. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0167] The above is a detailed introduction to an ion beam etching device and parameter analysis method provided by the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

Claims

1. An ion beam etching device, characterized in that: include: A film forming vacuum chamber (101), an etching ion source (102), a sample carrier (103), an electric field generating device (104), and a magnetic field generating device (105); The etching ion source (102) is fixedly arranged inside the film forming vacuum chamber (101), and the etching ion source (102) is used to generate an etching ion beam under vacuum conditions; The sample carrier (103) is fixedly arranged inside the film forming vacuum chamber (101) and is located directly below the emission end of the etching ion source (102); The electric field generating device (104) is fixed to the bottom of the sample carrier (103), and the electric field generating device (104) is used to generate an electric field to apply an electric field force to the ion beam to change the direction of ion movement; The magnetic field generating device (105) is mounted on the outside of the film forming vacuum chamber (101), and is used to work together with the electric field generating device (104) to change the movement direction and trajectory of ions; the center height of the magnetic field generating device (105) is at the same level as the sample carrier (103) or lower than the level of the sample carrier (103).

2. The ion beam etching device according to claim 1, characterized in that The sample carrier (103) is disc-shaped, a central shaft (1031) is fixed to the bottom of the film-forming vacuum chamber (101), and the sample carrier (103) is rotatably connected to the film-forming vacuum chamber (101) via the central shaft (1031).

3. The ion beam etching device according to claim 1, wherein: It also includes an insulating protection structure (106), which includes an insulating gasket (1061) and an insulating shell (1062), and the insulating gasket (1061) is arranged between the electric field generating device (104) and the sample carrier (103); the insulating shell (1062) is U-shaped, and the electric field generating device (104) is arranged in the U-shaped groove of the insulating shell (1062), and the top of the insulating shell (1062) is sealed and fixed to the insulating gasket (1061) to form a wrapping structure.

4. The ion beam etching device according to claim 1, wherein: The magnetic field generating device (105) comprises: an electromagnetic coil (1051), a supporting cylinder (1052) and a fixing seat (1053); The support tube (1052) is a hollow structure and is mounted on the outside of the film-forming vacuum chamber (101); the electromagnetic coil (1051) is a hollow parallel-wound annular coil and is arranged on the outside of the support tube (1052); a fixing seat (1053) is provided below the support tube (1052), and the electromagnetic coil (1051) is fixedly arranged on the outside of the vacuum chamber through the support tube (1052) and the fixing seat (1053).

5. The ion beam etching device according to claim 4, characterized in that: The electromagnetic coil (1051) has a wire diameter of 0.5 mm to 2 mm and a winding density of 10 to 50 turns / cm; the support tube (1052) has a height of 50 mm to 100 mm, and the current range of the electromagnetic coil (1051) is 0 to 20 A.

6. The ion beam etching device according to claim 1, wherein: The electric field generating device (104) is a voltage-stabilized power supply, and the current is in the form of direct current or pulse current.

7. The ion beam etching device according to claim 6, characterized in that: When the current is in the form of direct current, the DC voltage amplitude is 0 ~ -50V, when the current is in the form of pulse current, the pulse voltage amplitude is 0 ~ -200V, the voltage duty cycle is 0 ~ 60%, and the frequency is 0 ~ 30000Hz.

8. An ion beam etching parameter analysis method for adjusting parameters of the ion beam etching device according to any one of claims 1 to 7, characterized in that: include: Acquiring environmental parameters and physical parameters, wherein the environmental parameters include vacuum chamber parameters, background gas parameters, and sample parameters; and the physical parameters include electric field parameters, magnetic field parameters, and current form; Analyzing the environmental parameters and the physical parameters to obtain a physical field distribution; Performing motion simulation on ions based on the physical field distribution and the background gas parameters to obtain spatial motion trajectories of the ions; Analyzing the spatial potential difference and the spatial current formed by ions per unit area per unit time through the spatial motion trajectory and the sample parameters; The spatial current and spatial potential difference are compared with their corresponding preset current thresholds and preset potential difference thresholds respectively. When the spatial current is less than the preset current threshold and / or the spatial potential difference is greater than the preset potential difference threshold, the physical parameters are adjusted and the step of analyzing the environmental parameters and the physical parameters to obtain the physical field distribution is returned until the spatial current is greater than or equal to the preset current threshold and the spatial potential difference is less than the preset potential difference threshold, so as to obtain the target physical parameters.

9. The ion beam etching parameter analysis method according to claim 8, characterized in that: The analyzing the environmental parameters and the physical parameters to obtain a physical field distribution includes: Normalizing the physical parameters to obtain standard parameter data; Obtaining a target grid partitioning model from a preset grid partitioning model database according to the environmental parameters; discretizing the vacuum space into grids based on the target grid division model and the vacuum chamber parameters to obtain a plurality of grid units; Setting grid node coordinates for each of the grid units to obtain a spatial frame; Analyzing the boundary ranges of the electric field and the magnetic field in the vacuum space according to the physical parameters, and obtaining boundary values ​​of the physical field at the boundary of the space frame; Performing spatial mapping between the boundary range of the spatial frame and the boundary value to obtain a constraint range of the physical field; The standard parameter data and the constraint range are input into a preset residual connection neural network model to obtain a physical field distribution.

10. The ion beam etching parameter analysis method according to claim 8, characterized in that: The performing motion simulation on the ions based on the physical field distribution and the background gas parameters to obtain the spatial motion trajectory of the ions includes: Discretize ions into macroparticles containing multiple ions; Assigning coordinates to the macroparticles according to the physical field distribution to obtain a macroparticle data set with position labels; Analyzing the velocity and position of the macroparticle within a plurality of preset time steps based on the electromagnetic field intensity at each point in the space in the physical field distribution to obtain an initial motion trajectory; The initial motion trajectory and background gas parameters are input into a preset collision model, and the initial motion trajectory is corrected according to the collision probability and cross-section parameters to obtain a spatial motion trajectory.

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