Continuous powder atomic layer deposition equipment

Abstract

The invention provides continuous powder atomic layer deposition equipment. The equipment comprises a material storage unit; the reaction units are communicated in sequence; a plurality of air inlet units; a plurality of air exhaust units; wherein the reaction unit comprises a reaction cavity, a flow guide plate is arranged in the reaction cavity, and a gas-solid mixture formed by the powder and the carrier gas forms cyclone through the flow guide plate and is subjected to gas-solid separation. The continuous powder atomic layer deposition equipment is provided with a plurality of reaction cavities, efficient circulating treatment can be achieved, continuous feeding and discharging of powder can be achieved, and therefore the tonnage / day powder film preparation treatment capacity can be achieved; and a gas-solid system formed by mixing the powder and the carrier gas forms cyclone through the spiral guide plate, so that the powder is uniformly dispersed, and the continuous and uniform deposition of the film is realized.

Description

Technical Field

[0001] The present invention relates to the field of powder atomic layer deposition, and in particular to a continuous powder atomic layer deposition device. Background Art

[0002] The powder atomic layer deposition system is a process system used for surface coating of powder materials. Its principle is atomic layer deposition technology, also known as atomic layer epitaxy technology, which is a chemical vapor thin film deposition technology based on order, surface self-limiting saturation, and "bottom-up". The two precursors alternately undergo molecular-level self-limiting reactions on the surface of the object, thereby achieving uniform and controllable deposition of the film, and its thickness can be achieved by changing the number of ALD deposition cycles.

[0003] With the surge in demand for functional powders in new energy, catalysis, medicine and other fields, powder ALD technology is rapidly evolving towards continuous production and mass coating. Traditional ALD is a batch processing mode with limited single-time production capacity. The new continuous system connects multiple reaction chambers in series and combines an air-lock transmission device to achieve uninterrupted feeding and discharging of powders. With the reduction of equipment costs and the advancement of process standardization, ALD is expected to become one of the core technologies for the preparation of functional powders, promoting innovations in high-performance batteries, heterogeneous catalysts, drug controlled-release carriers and other fields. It will also break through the laboratory scale and move towards industrial-grade applications.

[0004] Uniform coating and surface modification of powder materials is an important technology in modern materials science and is widely used in the fields of lithium batteries, energy catalysis, medicine, metallurgy and military. These technologies enhance the performance of powder raw materials, improve chemical stability, electrical conductivity or catalytic activity, etc. by uniformly coating one or more layers of substances on the surface of powder particles or changing the surface properties of powders by chemical or physical methods.

[0005] However, traditional powder coating technology is mostly intermittent production, with limited single processing volume, long time consumption and low production capacity. Summary of the invention

[0006] In order to solve the above technical problems, the present invention proposes a novel continuous powder atomic layer deposition device.

[0007] The continuous powder atomic layer deposition device of the present invention comprises: Storage unit; A plurality of reaction units connected in sequence are used as reaction sites for powder and precursor respectively; A plurality of gas inlet units are respectively connected to the reaction units and transport corresponding carrier gases and precursors into corresponding reaction units; A plurality of gas extraction units, respectively connected to the reaction units and used to discharge the separated carrier gas, precursor and / or side reaction gas out of the reaction units; Among them, the reaction unit includes a reaction chamber, a flow guide plate is arranged in the reaction chamber, and the gas-solid mixture formed by the powder material and the carrier gas forms a cyclone through the flow guide plate for gas-solid separation.

[0008] In one embodiment, the storage unit includes: A gravimeter for automatically weighing and automatically discharging the material after weighing; A heating unit for preheating the discharged powder material to the reaction temperature.

[0009] In one embodiment, a flow guide cover is further arranged in the reaction chamber for guiding the separated carrier gas, precursor and / or side reaction gas to evacuate them.

[0010] In one embodiment, the intake unit includes: A precursor gas path for delivering a corresponding precursor to the corresponding reaction chamber; A carrier gas and purge gas path for delivering a corresponding carrier gas to the corresponding reaction chamber before the reaction starts and delivering a purge gas to the reaction chamber after the reaction in the reaction chamber ends.

[0011] In one embodiment, a filter screen is arranged between the air extraction unit and the reaction chamber to prevent the powder after the reaction from entering the air extraction unit.

[0012] In one embodiment, the reaction chamber includes at least n + 1 reaction chambers. Among them, the powder outlets of the reaction chambers are respectively arranged at the bottoms of the reaction chambers, the powder inlet of the (n + 1)-th reaction chamber is connected to the powder outlet of the n-th reaction chamber, and the powder outlet of the last reaction chamber is connected to the powder collection unit.

[0013] In one embodiment, the flow guide plate is a spiral flow guide plate.

[0014] In one embodiment, a valve is arranged between the powder outlet of the n-th reaction chamber and the powder inlet of the (n + 1)-th reaction chamber. The valve automatically opens after the purging work in the previous reaction chamber is completed, and when the valve between the powder outlet of the n-th reaction chamber and the powder inlet of the (n + 1)-th reaction chamber is opened, the valve between the powder outlet of the (n + 1)-th reaction chamber and the powder inlet of the (n + 2)-th reaction chamber is closed.

[0015] In one embodiment, the carrier gas is an inert gas selected from nitrogen or argon.

[0016] In one embodiment, the reaction chamber is a horizontal reaction chamber, and the powder is laterally brought into the reaction chamber by the cyclone formed by the flow guide plate.

[0017] In one embodiment, the purge gas is high-purity nitrogen, and the purge flow rate value of the purge nitrogen is 500 SCCM.

[0018] Compared with the prior art, the continuous powder atomic layer deposition equipment of the present invention can have the following beneficial effects: 1. A flow guide plate is arranged in the reaction chamber. Through the spiral flow guide plate, a gas-solid system in which powder is mixed with the carrier gas forms a cyclone, realizing uniform dispersion of the powder, so as to perform gas flow cross with the precursor and carry out chemical reactions, thereby realizing continuous and uniform deposition of the thin film; 2. It has multiple reaction chambers, can perform efficient cyclic processing, realize uninterrupted feeding and discharging of the powder, significantly improve the production capacity, so as to realize a powder film preparation throughput of tons / day, and further realize a breakthrough in the ALD mass preparation method in the field of powder catalysis or electrochemistry; and realize the localization of high-throughput powder ALD equipment technology; 3. The structure is simple. The reaction chamber adopts a horizontal structure with a small longitudinal distance, which is convenient for cavity stacking and process expansion; 4. After each deposition reaction, high-purity nitrogen is used as the purge gas, which is beneficial to removing residual excess reactants and side reaction products.

[0019] The above technical features can be combined in various technically feasible ways to generate new embodiments as long as the object of the present invention can be achieved. Description of the Drawings

[0020] Hereinafter, the present invention will be described in more detail based on non-limiting examples only and with reference to the drawings. Among them: Figure 1 Shows a schematic structural diagram of the continuous powder atomic layer deposition equipment according to the present invention.

[0021] In the figure, the same components are labeled with the same reference numerals. The drawings are not drawn to actual scale.

[0022] Among them, the reference numerals are: A, reaction unit; A1, first reaction chamber; A2, second reaction chamber; A3, third reaction chamber; A4, fourth reaction chamber; B, storage unit; C, first precursor gas path; D, second precursor gas path; E, oxidation / reduction reaction gas path; F, carrier gas and purge gas path; G, pumping unit; 1, blanking port valve; 2, blanking pipeline; 3, flow guide plate; 4, flow guide cover; 5, first precursor intake pipeline; 6, filter screen; 7, exhaust pipeline; 8, carrier gas inlet; 9, powder collection port; 10, blanking valve; 11, second precursor intake pipeline; 12, receiving tank valve; 13, powder collection tank. Detailed Embodiments

[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings of the specification and specific embodiments. It should be noted that as long as there is no conflict, the various embodiments in the present invention and the various features in each embodiment can be combined with each other, and the technical solutions formed are all within the protection scope of the present invention.

[0024] Those parts not described in the present invention can be realized by adopting or referring to the existing technologies.

[0025] As Figure 1 shown, an embodiment of the present invention provides a continuous powder atomic layer deposition device, including: A storage unit B, A plurality of reaction units A connected in sequence, respectively serving as reaction sites for powder and precursor; A plurality of gas inlet units, respectively connected to the reaction unit A and delivering corresponding carrier gases and precursors into the corresponding reaction unit A; A plurality of air extraction units, respectively communicating with the reaction unit A and used to discharge the separated carrier gases, precursors and / or side reaction gases from the reaction unit A; Wherein, the reaction unit A includes a reaction chamber (such as the first reaction chamber A1, the second reaction chamber A2, the third reaction chamber A3, the fourth reaction chamber A4...), and a deflector 3 is arranged in the reaction chamber. The gas-solid mixture formed by the powder and the carrier gas forms a cyclone through the deflector 3 for gas-solid separation.

[0026] In the embodiment of the present invention, the continuous powder atomic layer deposition device has a plurality of reaction chambers, and reacts with different precursors in different chambers respectively, which can be efficiently processed in a cyclic manner, realizing uninterrupted feeding and discharging of powder, significantly improving the production capacity, so that the powder film preparation throughput of tons per day can be achieved. At the same time, a deflector is arranged in the reaction chamber, and the gas-solid system of the powder and the carrier gas is formed into a cyclone through the spiral deflector, realizing uniform dispersion of the powder, so as to cross the air flow with the precursor and carry out chemical reaction, thereby realizing continuous and uniform deposition of the film.

[0027] In one embodiment, the storage unit B may include: A gravimeter, used for automatic weighing and automatic feeding after weighing; A heating unit, used for preheating the fed powder to the reaction temperature to accelerate the deposition reaction rate.

[0028] Optionally, the reaction temperature is 200 - 400 °C, preferably 150 - 350 °C. The preheating function can directly heat the cavity (for example, by means of resistance heating or radiation heating), and utilize heat conduction to uniformly heat the powder (powder material). In one embodiment, a flow guide cover is further provided in the reaction cavity. The flow guide cover can play a role in guiding the flow. After the powder material entering the reaction cavity undergoes a deposition reaction with the precursor, the generated side reaction gas and the separated carrier gas nitrogen flow out of the reaction cavity along the flow guide cover 4 through the exhaust pipe 7 under the action of the flow guide cover 4.

[0029] In one embodiment, the intake unit includes: A precursor gas path for delivering a corresponding precursor to a corresponding reaction cavity; A carrier gas and purge gas path F for delivering a corresponding carrier gas to a corresponding reaction cavity before the reaction starts and delivering a purge gas to the reaction cavity after the reaction in the reaction cavity ends.

[0030] As Figure 1 shown, each reaction cavity is respectively connected to a precursor gas path, and the powder material undergoes a chemical deposition reaction with the corresponding precursor in the corresponding reaction cavity.

[0031] For example, the first reaction cavity A1 is connected to the first precursor gas path C, the second reaction cavity A2 is connected to the second precursor gas path D, and the third reaction cavity A3, according to specific process requirements, selects to continue to be connected to the first precursor gas path C / the second precursor gas path D to achieve the required powder coating thickness through multiple reaction cycles. In addition, the third reaction cavity A3 and the fourth reaction cavity A4 can also, according to specific process requirements, the third reaction cavity A3 selects to be connected to the third precursor gas path in the oxidation / reduction reaction gas path E, and the fourth reaction cavity A4 selects to be connected to the fourth precursor gas path.

[0032] It should be noted that, according to process needs, the precursor intakes of the four reaction cavities can be arranged arbitrarily, and in order to achieve a satisfactory powder coating thickness, the actual number of cavities can also be increased according to specific process requirements.

[0033] A carrier gas and purge gas path F for delivering a corresponding carrier gas to a corresponding reaction cavity before the reaction starts and delivering a purge gas to the reaction cavity after the reaction in the reaction cavity ends.

[0034] In the embodiments of the present invention, the carrier gas and purge gas are inert gases. Optionally, they are high-purity nitrogen or argon, and preferably high-purity nitrogen with a purity not less than 99.99%.

[0035] After the reaction ends and the powder enters the powder collection port 9 of the reaction chamber, purge gas is introduced to purge the residual side reaction gas and unreacted precursor in the chamber. The purge flow rate is 100 - 500 sccm, and for a larger chamber, it can be 1000 - 10,000 sccm, preferably 500 sccm.

[0036] In an alternative embodiment, a filter screen 6 is provided between the air extraction unit and the reaction chamber. The filter screen 6 can prevent powder from entering the air extraction unit.

[0037] In an alternative embodiment, the air extraction unit includes an air extraction pipeline 7 and a pumping system G. The air extraction pipeline 7 communicates with the inside of the reaction chamber. A filter screen 6 is provided at the entrance inside the reaction chamber to prevent powder from entering the air extraction pipeline 7. The generated side reaction gas and the separated carrier gas nitrogen flow out of the reaction chamber along the air extraction pipeline 7 under the action of the diversion hood 4 and the pumping system.

[0038] Optionally, the carrier gas and purge gas gas path F is provided at the front end of the reaction chamber, and the air extraction unit is provided at the tail end (or rear end) of the reaction chamber.

[0039] In one embodiment, the reaction chamber includes at least n + 1 reaction chambers. Among them, the powder outlets of the reaction chambers are respectively provided at the bottoms of the reaction chambers. The powder inlet of the (n + 1)-th reaction chamber is connected to the powder outlet of the n-th reaction chamber, and the powder outlet of the last reaction chamber is connected to the powder collection unit.

[0040] As Figure 1 shown, in the embodiment of the present invention, 4 reaction chambers are provided. The powder inlet of each reaction chamber is located above the chamber, and the powder outlet is located below the chamber. The powder inlet of the first reaction chamber A1 is connected to the storage unit, and the powder of the storage unit is fed into the first reaction chamber A1 through this place. The powder outlet of the first reaction chamber A1 is connected to the second reaction chamber A2, and the powder outlet of the second reaction chamber A2 is connected to the third reaction chamber, and so on. The powder outlet of the last reaction chamber is connected to the powder collection tank for collecting the powder after the reaction ends.

[0041] Furthermore, a valve is provided between the powder outlet of the n-th reaction chamber and the powder inlet of the (n + 1)-th reaction chamber. The valve automatically opens after the purge operation in the previous reaction chamber is completed, and when the valve between the powder outlet of the n-th reaction chamber and the powder inlet of the (n + 1)-th reaction chamber is open, the valve between the powder outlet of the (n + 1)-th reaction chamber and the powder inlet of the (n + 2)-th reaction chamber is closed.

[0042] After the reaction between the powder material and the precursor in the previous reaction chamber is completed, the powder slides down along the outer wall and finally flows to the powder collection port 9 (i.e., the powder outlet of the reaction chamber, which is a collection tube with a certain length), and stays here for easy collection. At this time, purge gas (such as high-concentration nitrogen) is introduced through the carrier gas and purge gas gas path F to purge the residual side reaction gas and the unreacted precursor in the chamber, and is pumped to the pumping system G through the exhaust pipe 7. After the purging is completed, the valve 10 of the feed port is opened, and the powder enters the next reaction chamber to carry out the next reaction with the precursor in the next reaction chamber.

[0043] A receiving tank valve 12 is also provided between the powder outlet of the last reaction chamber and the powder collection tank. After the purging of the last reaction chamber is completed, the receiving tank valve 12 is opened, and the powder enters the powder collection tank 13 through the receiving tank valve 12.

[0044] Valves are provided at both ends of the powder inlet and the powder outlet of the device of the present invention. This design can effectively isolate the outside environment during the process of particles entering and leaving the reaction chamber, and can control the entry and exit of nanoparticles into and out of the reaction chamber through the powder inlet and the powder outlet, ensuring the continuous progress of the atomic layer deposition reaction.

[0045] In an optional embodiment, the deflector is a spiral deflector.

[0046] The spiral structure stratifies the gas-solid mixture by inducing rotational flow. Large particles gather and settle towards the outer wall due to the centrifugal force, reducing the residue of particles in the core region of the flow; at the same time, it guides the fluid to form a stable rotational flow pattern, which can reduce turbulence and pressure drop. In addition, the spiral deflector can make the gas-solid two-phase flow form a spiral upward or downward flow pattern, reducing the flow dead zone and lowering the local resistance. The continuous spiral design of the spiral deflector can suppress eddy currents and backmixing, inhibit secondary flow, improve the axial flow stability of the gas-solid mixture, and reduce energy loss. The spiral flow can make the particles evenly distributed along the wall surface, avoiding the concentrated erosion of locally high-concentration particles and extending the service life of the equipment.

[0047] In an optional embodiment, the atomic deposition equipment of the present invention further includes a heating unit for heating all reaction chambers and valves, and the heating temperature is the same as the preheating temperature of the powder in the storage unit.

[0048] In an optional embodiment, the reaction chamber is a horizontal reaction chamber, and the powder is horizontally introduced into the reaction chamber through the cyclone formed by the deflector. The horizontally designed chamber structure is simple and has a small longitudinal distance, which is convenient for chamber stacking and process expansion.

[0049] Furthermore, the reaction chamber is designed with a narrow front and a wide rear (i.e., the end where the carrier gas and purge gas gas path F is located is the front, and the end where the pumping unit is located is the rear). The narrow-front-and-wide-rear structure increases the flow rate of the carrier gas (such as N2 or Ar) through the contraction effect at the inlet, forcing the gas to enter the reaction chamber in a laminar flow form and reducing local vortices caused by turbulence. This design helps the carrier gas and powder particles to mix more evenly, avoiding powder agglomeration or uneven distribution. In the laminar flow state, the carrier gas can more effectively wrap the surface of the powder particles, forming a stable gas-solid mixed flow, which is especially suitable for nano-scale or high specific surface area powders (such as the cathode material of lithium batteries), ensuring uniform adsorption of the precursor on the particle surface. And it helps the high-flow inert gas to quickly strip the unreacted precursor and by-products during the purge stage, preventing their deposition on the powder surface or the inner wall of the chamber, thereby reducing cross-contamination and film defects.

[0050] The following refers to Figure 1 , and a specific process embodiment is used to illustrate the process flow of the atomic deposition equipment of the present invention.

[0051] The storage system A is equipped with a gravimeter and a heating system for automatic feeding according to weight, preheating the powder material to the reaction temperature. At this time, the feeding port valve 1 of the first reaction chamber A1 is in the closed state. When the heating temperature of the powder material reaches the specified temperature, the feeding port valve 1 is opened, and the heated powder material enters the first reaction chamber A1 through the feeding pipeline (powder material inlet pipeline) 2. At the same time, high-purity nitrogen gas in the carrier gas and purge gas path F enters the first reaction chamber A1 through the carrier gas inlet 8. At the same time, the first precursor passes through the first precursor gas path C and enters the first reaction chamber A1 through the first precursor inlet pipeline 5.

[0052] In this way, the continuously heated powder enters the first reaction chamber A1 along with the high-throughput carrier gas. First, it passes through the spiral deflector 3, forming a cyclone for the gas-solid system of the powder and the carrier gas, so that the powder particles with larger inertial centrifugal force are thrown to the outer wall surface, cross with the first precursor entering through the first precursor inlet pipeline 5, and undergo a chemical reaction. The generated side reaction gas and the separated carrier gas nitrogen flow out of the first reaction chamber A1 along the deflector cover 4 and the pumping pipeline 7 of the pumping system G and are sent to the pumping system G. A filter screen 6 is arranged in front of the pumping pipeline 7, and the filter screen 6 can play a role in isolating a very small amount of powder from entering the pumping pipeline 7.

[0053] The powder after reacting with the first precursor slides down along the outer wall and finally flows to the powder collection port 9 for collection. When a certain weight of powder completely enters the first reaction chamber A1, the powder temporarily stays in the powder collection port 9, and the flow rate of the carrier gas entering through the carrier gas inlet is reduced to the purge flow rate value (500 SCCM) to purge the side reaction gas and the unreacted precursor remaining in the first reaction chamber A1, and is pumped to the pumping system G through the pumping pipeline 7.

[0054] After purging is completed, the feeding port valve 10 of the first reaction chamber A1 is opened, and the powder enters the second reaction chamber A2 to carry out the second reaction process with the second precursor. The process is the same as that in the first reaction chamber A1, except that the precursor is the second precursor entering through the second precursor inlet pipe 11, and it undergoes the second chemical reaction process with the powder. The remaining operation steps are the same as those in the first reaction chamber A1.

[0055] Similarly, when the reaction in the second reaction chamber A2 ends and purging is completed, the powder enters the third reaction chamber A3. The precursor introduced into the third reaction chamber A3 is the third precursor in the oxidation / reduction reaction gas path E (or the first precursor is continuously introduced to repeat the reaction in the first reaction chamber A1). If there is a fourth precursor, it will be carried out in the fourth reaction chamber A4. After the final reaction is completed, the powder waits until the final purging work is completed, and then enters the powder collection tank 13 through the material receiving tank valve 12 to complete powder collection.

[0056] At the same time, after the powder enters the second reaction chamber A2, the feeding valve 10 is closed. After the feeding valve 10 is closed, the feeding port valve 1 is opened, and the second batch of powder continues to enter the reaction chamber A to start the first coating process. In this way, a batch continuous coating process for the same powder material can be realized.

[0057] It should be noted that according to process requirements, the precursor inlets of the four chambers can be arranged arbitrarily. And in terms of the conventional reaction process of atomic layer deposition, if one cycle cannot achieve the required powder coating thickness, multiple reaction cycles are required to reach the required powder coating thickness. At this time, the number of reaction chambers and the precursor inlet can be increased or decreased according to process conditions to achieve a satisfactory coating thickness.

[0058] According to the continuous powder atomic layer deposition equipment of the present invention, it has multiple reaction chambers, can perform efficient cyclic processing, realize uninterrupted feeding and discharging of powder, and thus can achieve a powder film preparation throughput of tons per day. A deflector is provided in the reaction chamber, and a cyclone is formed in the gas-solid system in which the powder is mixed with the carrier gas through the spiral deflector to realize uniform dispersion of the powder, thereby realizing continuous and uniform deposition of the film. Unless otherwise defined, the technical terms or scientific terms used in the present invention shall have the ordinary meanings understood by those of ordinary skill in the art to which the present invention pertains. The terms "first", "second" and similar words used in the present invention do not denote any order, quantity or importance, but are only used to distinguish different components. Words such as "comprising" or "including" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. In the description of the present invention, the orientation or positional relationship indicated by terms such as "lateral", "upper", "lower", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly. Therefore, it should not be construed as a limitation to the present invention.

[0059] Up to this point, those skilled in the art should recognize that although the present invention has been described with reference to the preferred embodiments, various improvements can be made to it and components therein can be replaced with equivalents without departing from the scope of the present invention. In particular, as long as there is no structural conflict, the technical features mentioned in each embodiment can be combined in any way. The present invention is not limited to the specific embodiments disclosed in the text, but includes all technical solutions falling within the scope of the claims.

Claims

1. A continuous powder atomic layer deposition device, characterized in that Comprising: A material storage unit; Multiple sequentially connected reaction units, respectively serving as reaction sites for the reaction of powder materials and precursors; Multiple gas inlet units, respectively connected to the reaction units and used to transport corresponding carrier gases and precursors into the corresponding reaction units; Multiple gas extraction units, respectively communicating with the reaction units and used to discharge the separated carrier gases, precursors, and / or side reaction gases from the reaction units; Wherein, the reaction unit includes a reaction chamber, a deflector is arranged in the reaction chamber, and the gas-solid mixture formed by the powder material and the carrier gas forms a cyclone through the deflector for gas-solid separation.

2. The continuous powder atomic layer deposition equipment according to claim 1, characterized in that, The material storage unit includes: A gravimeter, used for automatic weighing and automatic feeding after weighing; A heating unit, used for preheating the fed powder material to the reaction temperature.

3. The continuous powder atomic layer deposition equipment according to claim 1, characterized in that, A flow guide cover is further arranged in the reaction chamber, used for guiding the separated carrier gases, precursors, and / or side reaction gases to evacuate them.

4. The continuous powder atomic layer deposition equipment according to claim 1, characterized in that, The gas inlet unit includes: A precursor gas path, used for transporting corresponding precursors into the corresponding reaction chamber; A carrier gas and purge gas path, used for transporting corresponding carrier gases into the corresponding reaction chamber before the reaction starts and transporting purge gas into the reaction chamber after the reaction in the reaction chamber ends.

5. The continuous powder atomic layer deposition equipment according to claim 1, characterized in that, A filter screen is arranged between the gas extraction unit and the reaction chamber to prevent the powder after reaction from entering the gas extraction unit.

6. The continuous powder atomic layer deposition equipment according to claim 4, characterized in that, The reaction chamber includes at least n + 1 reaction chambers. Wherein, the powder outlets of the reaction chambers are respectively arranged at the bottoms of the reaction chambers, the powder inlet of the (n + 1)th reaction chamber is connected to the powder outlet of the nth reaction chamber, and the powder outlet of the last reaction chamber is connected to a powder collection unit.

7. The continuous powder atomic layer deposition equipment according to claim 1, characterized in that, The deflector is a spiral deflector.

8. The continuous powder atomic layer deposition equipment according to claim 6, characterized in that, A valve is arranged between the powder outlet of the nth reaction chamber and the powder inlet of the (n + 1)th reaction chamber. The valve automatically opens after the purge operation in the previous reaction chamber is completed, and when the valve between the powder outlet of the nth reaction chamber and the powder inlet of the (n + 1)th reaction chamber is open, the valve between the powder outlet of the (n + 1)th reaction chamber and the powder inlet of the (n + 2)th reaction chamber is closed.

9. The continuous powder atomic layer deposition equipment according to claim 1, characterized in that, The carrier gas is an inert gas selected from nitrogen or argon.

10. The continuous powder atomic layer deposition equipment according to claim 1, wherein The reaction chamber is a horizontal reaction chamber, and the powder is horizontally brought into the reaction chamber by the cyclone formed by the deflector.

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