Substrate processing apparatus

Abstract

The invention discloses a substrate processing apparatus, comprising at least one process module, each process module comprising: at least two reaction chambers, each reaction chamber comprising a boat for bearing a plurality of substrates; and the wafer boat transfer device is connected with the at least two wafer boats and is used for moving each wafer boat to a preset position to receive the substrate and moving each wafer boat into the corresponding reaction chamber. Each process module comprises at least two reaction chambers, the number of substrates borne by each wafer boat can be reduced on the premise that the total amount of the substrates treated at a time is not changed, the size of the wafer boat and the size of each reaction chamber can be reduced, on one hand, the internal temperature control is more accurate; and on the other hand, the gas distribution in the substrate is more uniform, so that the uniformity of the properties of the film layers among different substrates can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a substrate processing device. Background Art

[0002] There are two types of thin film deposition equipment: single-wafer and batch-type. Single-wafer machines are single-chamber process machines with small chamber size, stable process, less gas raw material usage, lower cost, and good uniformity of wafer film properties, but their production efficiency is low. Batch machines can process multiple wafers at the same time, such as being able to deposit film layers on 100-125 wafers at a time. They have high production efficiency and can maximize their production capacity advantages, but the wafers are arranged in order from top to bottom in the wafer boat, and the uniformity of film properties between different layers of wafers is poor. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a substrate processing device in order to overcome the defects of low production efficiency of single-wafer machines and poor uniformity of film properties between different wafers of batch machines in the prior art.

[0004] The present invention solves the above technical problems through the following technical solutions:

[0005] A substrate processing device, comprising:

[0006] At least one process module, each of the process modules comprising:

[0007] At least two reaction chambers, each of the reaction chambers comprising a wafer boat for carrying a plurality of substrates;

[0008] The wafer boat transfer device is connected to at least two of the wafer boats and is used to move each of the wafer boats to a preset position to receive a substrate, and to move each of the wafer boats into a corresponding reaction chamber.

[0009] Preferably, the substrate processing device further comprises:

[0010] A buffer zone, used for temporarily storing a plurality of substrate boxes;

[0011] The substrate conveying device is used to convey the substrate between the buffer area and the wafer boat, and the substrate conveying device receives the substrate from the wafer boat at the preset position.

[0012] Preferably, the wafer boat transfer device comprises:

[0013] A rotating mechanism, the rotating mechanism includes a driving unit, a rotating shaft, and at least two connecting arms. The driving unit is connected to the rotating shaft and is used to drive the rotating shaft to rotate. One end of the at least two connecting arms is connected to the rotating shaft, and the other end of the at least two connecting arms is connected to the susceptor. The rotating mechanism is used to drive the susceptor to rotate around the rotating shaft;

[0014] A lifting mechanism, the lifting mechanism is connected to the rotating mechanism and is used to drive the rotating mechanism to lift and lower.

[0015] In this solution, the rotating mechanism can drive the susceptor to rotate around the rotating shaft, so that the susceptor can be moved to a preset position, and further, each susceptor in each process module can receive a substrate. The lifting mechanism can drive the rotating mechanism to lift and lower, so that the susceptor can be indirectly driven to lift and lower to move the susceptor into the reaction chamber.

[0016] Preferably, the susceptor transfer device includes:

[0017] A lifting main body;

[0018] A connecting arm, one end of the connecting arm is connected to the susceptor;

[0019] A rotating mechanism, including an annular fixed part and an annular rotating part. The rotating part is arranged on the fixed part, and the rotating part can rotate around the lifting main body. The rotating mechanism is used to drive the connecting arm to rotate around the lifting main body;

[0020] A lifting unit is arranged on the lifting main body and can move up and down along the lifting main body. The other end of the connecting arm is detachably arranged on the lifting unit, and the lifting unit is used to drive the connecting arm to move up and down along the lifting main body;

[0021] When the connecting arm reaches the first position of the lifting main body, the connecting arm is disengaged from the lifting unit, and the connecting arm is connected to the rotating part, or the connecting arm is connected to the lifting unit, and the connecting arm is disengaged from the rotating part.

[0022] In this solution, the susceptor transfer device can independently control the lifting and rotation of any susceptor in the process module. Specifically, when only one reaction chamber is used, the lifting unit can drive one of the susceptors to descend to the first position of the lifting main body, and the rotating part drives the susceptor to rotate to a preset position to receive the substrate. After the substrate loading is completed, the susceptor can return to the reaction chamber under the drive of the rotating part and the lifting unit respectively for individual processes.

[0023] Preferably, the lifting body further includes a rotating engaging member disposed at the first position. When the rotating engaging member rotates around the lifting body, the rotating engaging member is configured to guide and limit the connecting arm.

[0024] Preferably, the lifting unit is provided with a first protrusion, and the connecting arm is provided with a first groove matching the first protrusion. Through the cooperation of the first protrusion and the first groove, the lifting unit and the connecting arm are detachably connected.

[0025] Preferably, the rotating part is provided with a second protrusion, and the connecting arm is provided with a second groove matching the second protrusion. Through the cooperation of the second protrusion and the second groove, the rotating part and the connecting arm are detachably connected.

[0026] Preferably, the reaction chamber includes 1 - 2 independent heating zones.

[0027] Preferably, the susceptor is configured such that the number of substrates it can carry is less than or equal to 60 pieces.

[0028] Preferably, the susceptor can carry a number of substrates less than or equal to 30 pieces.

[0029] Preferably, the susceptor is configured such that in the substrate processing process, 1 - 5 dummy wafers are placed in the top region of the susceptor, and 1 - 5 dummy wafers are placed in the bottom region of the susceptor.

[0030] Preferably, a plurality of process modules are provided, and one or more substrate transfer devices are provided. The process modules are arranged around the substrate transfer device, and each substrate transfer device transfers substrates to a specific one or more process modules.

[0031] The positive and progressive effects of the present invention are as follows: In the present invention, each process module includes at least two reaction chambers. On the premise of ensuring that the total amount of substrates processed at one time remains unchanged, the number of substrates carried by each susceptor can be reduced, and the volume of the susceptor and the volume of each reaction chamber can be reduced. With a small volume of the reaction chamber, on the one hand, the temperature control inside is more precise, and the temperatures of different layers of the susceptor inside are more uniform; on the other hand, the gas distribution inside is also more uniform, which is beneficial to improving the uniformity of the film properties between different substrates. By providing a susceptor transfer device, the susceptor transfer device can move the susceptor to a preset position to receive substrates and move each susceptor into the corresponding reaction chamber, solving the problems of transferring substrates into different susceptors and moving multiple susceptors into the corresponding reaction chambers. In summary, the substrate processing device in the present invention not only improves the uniformity of the film properties between different substrates but also has a high production efficiency. Description of the Drawings

[0032] Figure 1 Schematic structural diagram of the substrate processing apparatus according to Embodiment 1 of the present invention;

[0033] Figure 2 Schematic structural diagram of the susceptor transfer apparatus according to Embodiment 1 of the present invention;

[0034] Figure 3 Schematic structural diagram of the susceptor transfer apparatus according to Embodiment 2 of the present invention. Detailed Embodiments

[0035] The present invention will be further described below by way of embodiments, but the present invention is not limited to the scope of the embodiments.

[0036] Embodiment 1

[0037] As Figure 1 and Figure 2 shown, this embodiment provides a substrate processing apparatus, including two process modules 100. Each process module 100 includes two reaction chambers 110 and a susceptor transfer apparatus 120. Each reaction chamber 110 includes a susceptor 111 for carrying a plurality of substrates. The susceptor 111 is configured to: the number of substrates that can be carried is less than or equal to 60 pieces. The susceptor transfer apparatus 120 is connected to the two susceptors 111, and is configured to move each susceptor 111 to a preset position to receive substrates, and move each susceptor 111 into the corresponding reaction chamber 110.

[0038] Specifically, the susceptor transfer apparatus 120 is disposed between the two reaction chambers 110 to facilitate the transfer of the susceptor.

[0039] In some embodiments, the number of process modules 100 and the number of reaction chambers 110 in each process module 100 can be set to more according to needs.

[0040] In this embodiment, each process module 100 includes two reaction chambers 110, and the number of substrates carried by each wafer boat 111 can be reduced while ensuring that the total amount of substrates processed at one time remains unchanged. Specifically, the number of substrates carried by the wafer boat 111 is less than or equal to 60, which is reduced compared to the number of substrates carried by the existing wafer boat, so that the volume of the wafer boat 111 can be reduced, and then the volume of the reaction chamber 110 can also be reduced. The small volume of the reaction chamber 110 is convenient for regulating various process parameters inside it. For example, on the one hand, the temperature control inside it is more precise; on the other hand, the gas distribution inside it is more uniform, which is conducive to improving the uniformity of film properties between different layers of substrates. Although each reaction chamber 110 can process up to 60 substrates, each process module 100 can include at least two reaction chambers 110, and the substrate processing device includes two process modules 100, and the substrate processing device can process more substrates at the same time. In summary, the substrate processing device in the present invention not only improves the uniformity of film properties between different substrates, but also has higher production efficiency. In addition, the volume of the reaction chamber 110 is reduced, the pressure detection inside it is more accurate, and the pressure control is relatively easier. The stability of the pressure is beneficial to improving the uniformity of the film layer on the substrate.

[0041] In some embodiments, the number of substrates carried by the wafer boat 111 may be more than 60 as required.

[0042] In other embodiments, the number of process modules may be only one or more than two. The number of reaction chambers in each process module may also be more than two as required.

[0043] In this embodiment, the substrate processing device further includes:

[0044] The loading port 500 is used to load a plurality of substrate boxes.

[0045] The buffer zone 300 is used to temporarily store a plurality of substrate boxes.

[0046] The substrate box transfer device 400 is used to transfer the substrate box between the loading port 500 and the buffer zone 300 .

[0047] The substrate conveying device 200 is used to convey substrates between the buffer area 300 and the wafer boat 111 , and the substrate conveying device 200 exchanges substrates with the wafer boat 111 at a preset position.

[0048] The wafer boat transfer device 120 can move the wafer boat 111 to a preset position. With the cooperation of the wafer boat transfer device 120 , the substrate conveying device 200 only needs to convey the substrate to the preset position to convey the substrate to the two wafer boats 111 in the same process module 100 , which can indirectly expand the conveying range of the substrate conveying device 200 .

[0049] In this embodiment, the preset position is the position below the reaction chamber 110 close to the substrate transfer device 200 in each process module, as shown by the dashed line in Figure 1 . In other embodiments, the preset position can also be flexibly set according to needs.

[0050] Specifically, as Figure 2 shown, in this embodiment, the susceptor transfer device 120 includes a rotation mechanism and a lifting mechanism 121. The rotation mechanism includes a driving unit 122, a rotation shaft 123, and two connecting arms 124. The driving unit 122 is connected to the rotation shaft 123 and is used to drive the rotation shaft 123 to rotate. One end of each of the two connecting arms 124 is respectively connected to the rotation shaft 123, and the other end of each of the two connecting arms 124 is respectively connected to the susceptor 111. The rotation mechanism is used to drive the susceptor 111 to rotate around the rotation shaft 123. The lifting mechanism 121 is connected to the rotation mechanism and is used to drive the rotation mechanism to lift and lower. The rotation mechanism can drive the susceptor 111 to rotate around the rotation shaft 123, so that each susceptor 111 can be respectively moved to the preset position, and further each susceptor 111 in each process module 100 can receive the substrate at the preset position. By driving the rotation mechanism to lift and lower through the lifting mechanism 121, the susceptor 111 can be indirectly driven to lift and lower to move the susceptor 111 into the corresponding reaction chamber 110. The lifting mechanism 121 can adopt a lifting structure in the prior art, such as an electric lifting platform.

[0051] The volume of the reaction chamber 110 in this embodiment is relatively small, and the temperature control inside the reaction chamber 110 is easier. Therefore, the number of independent heating zones can be reduced, and only 1 or 2 independent heating zones can meet the temperature uniformity of different regions inside the reaction chamber 110.

[0052] In some embodiments, the number of substrates that the susceptor can carry can also be less than or equal to 30 pieces. The volume of the susceptor can be processed to be smaller, and then the volume of the reaction chamber 110 can also be processed to be smaller, which is beneficial to further improving the uniformity of the film properties between different layers of substrates.

[0053] In this embodiment, the reaction chamber 110 has a small volume, and the gas atmosphere and temperature uniformity inside it are easier to control. The susceptor 111 is configured such that in the substrate processing process, two dummy wafers are placed in the top region and the bottom region of the susceptor 111 respectively. Here, the number of dummy wafers is also included in the range of the number of substrates that the susceptor 111 can carry. The temperature and gas atmosphere uniformity in the top region and the bottom region of the susceptor 111 are relatively poor compared to the middle region of the susceptor. Therefore, dummy wafers are usually placed in the top region and the bottom region of the susceptor. Conventional susceptors can carry a relatively large number of substrates, so the susceptor has a large volume, and the temperature and gas atmosphere uniformity in its top region and bottom region are relatively poor. Taking 125 wafers as an example, about 19 dummy wafers need to be placed in the top region and the bottom region of the susceptor in total to ensure that the remaining substrates to be actually processed have a good process environment. The actual number of substrates that the susceptor can process is 106 wafers, that is, the proportion of effective substrates is about 85%. In this embodiment, taking the number of substrates that the susceptor 111 can carry as 60 wafers as an example, the total number of dummy wafers is 4, the actual number of substrates that can be processed is 56 wafers, and the proportion of effective substrates is about 93%, which improves the proportion of effective substrates.

[0054] In some embodiments, in order to further improve the film deposition quality of the substrate, the number of dummy wafers can also be increased. 3 - 5 dummy wafers can be placed in the top region of the susceptor according to requirements, or 3 - 5 dummy wafers can be placed in the bottom region of the susceptor. Of course, in order to further increase the proportion of effective substrates, the number of dummy wafers placed can also be reduced, and only 1 dummy wafer can be placed in the top region of the susceptor, or only 1 dummy wafer can be placed in the bottom region of the susceptor.

[0055] In some embodiments, in order to increase the throughput of substrates, multiple process modules 100 can be provided. Correspondingly, one or more substrate transfer devices 200 are provided. The process modules 100 are arranged around the substrate transfer device 200, and each substrate transfer device 200 transfers substrates to a specific one or more process modules 100 to improve the substrate transfer efficiency.

[0056] Embodiment 2

[0057] This embodiment is basically the same as the solution of Embodiment 1, and the difference is that in this embodiment, the susceptor transfer device can independently control the rotation and lifting of each susceptor, with higher flexibility. Specifically, as Figure 3As shown in the figure, the susceptor transfer device includes: a base 131, a rotating mechanism, a lifting main body 135, a connecting arm 140, and a lifting unit 136. The rotating mechanism and the lifting main body 135 are respectively arranged on the base 131. The rotating mechanism includes an annular fixed part 133 and an annular rotating part 132. The rotating part 132 is arranged on the fixed part 133, and the rotating part 132 can rotate around the lifting main body 135 as the center. The lifting unit 136 is arranged on the lifting main body 135 and can move up and down along the lifting main body 135. One end of the connecting arm 140 is detachably arranged on the lifting unit 136, and the other end of the connecting arm 140 is connected to the susceptor 111. The lifting unit 136 is used to drive the connecting arm 140 to move up and down along the lifting main body 135. A first protrusion 137 is arranged on the lifting unit 136, and a first groove 141 matching the first protrusion 137 is arranged on the connecting arm 140. Through the cooperation of the first protrusion 137 and the first groove 141, the lifting unit 136 is connected to the connecting arm 140, driving the connecting arm 140 to move up and down along the lifting main body 135. A rotation fitting 1351 is arranged at the first position of the lifting main body 135. When the lifting unit 136 drives the connecting arm 140 to descend to the rotation fitting 1351, the lifting unit 136 continues to descend, the connecting arm 140 is connected to the rotating part 132, the connecting arm 140 is separated from the lifting unit 136, and the rotating part 132 drives the connecting arm 140 to rotate around the lifting main body 135, thereby driving the susceptor 111 to reach a preset position to receive the substrate. A second protrusion 134 is arranged on the rotating part 132, and a second groove 142 matching the second protrusion 134 is arranged on the connecting arm. Through the cooperation of the second protrusion 134 and the second groove 142, the rotating part 132 is connected to the connecting arm 140, driving the connecting arm 140 to rotate around the lifting main body 135. Among them, the rotation fitting 1351 plays a role of guiding and limiting. Specifically, the rotation fitting 1351 can be an annular guiding groove. By adding the rotation fitting 1351, the connecting arm 140 is more stable when rotating around the lifting main body 135. After the susceptor 111 is loaded with the substrate, the rotating part 132 drives the connecting arm 140 back above the lifting unit 136, the lifting unit 136 rises, the lifting unit 136 is connected to the connecting arm 140, and the rotating part 132 is separated from the connecting arm 140, thereby driving the susceptor 111 to rise into the reaction chamber 110.

[0058] Specifically, in this embodiment, the rotating mechanism can adopt a hollow DD motor.

[0059] In some embodiments, the rotation fitting 1351 may not be provided either.

[0060] The susceptor transfer device can independently control the lifting and rotation of any susceptor in the process module. Specifically, when only one reaction chamber is used, the lifting unit 136 can drive one of the susceptors 111 to descend to the rotation fitting 1351 of the lifting main body 135, and the rotation part 132 drives the susceptor 111 to rotate to a preset position to receive the substrate. After the substrate loading is completed, the susceptor 111 can return to the reaction chamber 110 under the drive of the rotation part 132 and the lifting unit 136 respectively to perform the process independently.

[0061] Although the specific embodiments of the present invention have been described above, those skilled in the art should understand that this is only an example. The protection scope of the present invention is defined by the appended claims. Without departing from the principle and essence of the present invention, those skilled in the art can make various changes or modifications to these embodiments, but these changes and modifications all fall within the protection scope of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, include: At least one process module, each of the process modules comprising: At least two reaction chambers, each of the reaction chambers comprising a wafer boat for carrying a plurality of substrates; The wafer boat transfer device is connected to at least two of the wafer boats and is used to move each wafer boat to a preset position to receive a substrate, and to move each wafer boat into a corresponding reaction chamber.

2. The substrate processing apparatus according to claim 1, wherein The substrate processing device further comprises: A buffer zone, used for temporarily storing a plurality of substrate boxes; The substrate conveying device is used to convey the substrate between the buffer area and the wafer boat, and the substrate conveying device receives the substrate from the wafer boat at the preset position.

3. The substrate processing apparatus according to claim 1, wherein The wafer boat transfer device comprises: The rotating mechanism comprises a driving unit, a rotating shaft and at least two connecting arms, wherein the driving unit is connected to the rotating shaft and used to drive the rotating shaft to rotate, one end of the at least two connecting arms is connected to the rotating shaft, and the other end of the at least two connecting arms is connected to the wafer boat, and the rotating mechanism is used to drive the wafer boat to rotate around the rotating shaft; The lifting mechanism is connected to the rotating mechanism and is used to drive the rotating mechanism to rise and fall.

4. The substrate processing apparatus according to claim 1, wherein The wafer boat transfer device comprises: Lifting the main body; A connecting arm, one end of which is connected to the wafer boat; The rotating mechanism comprises an annular fixed part and an annular rotating part, wherein the rotating part is arranged on the fixed part, the rotating part can rotate around the lifting body, and the rotating mechanism is used to drive the connecting arm to rotate around the lifting body; A lifting unit is arranged on the lifting body and can move up and down along the lifting body. The other end of the connecting arm is detachably arranged on the lifting unit. The lifting unit is used to drive the connecting arm to move up and down along the lifting body. When the connecting arm reaches the first position of the lifting body, the connecting arm is disengaged from the lifting unit and connected to the rotating part, or the connecting arm is connected to the lifting unit and disengaged from the rotating part.

5. The substrate processing apparatus according to claim 4, wherein The lifting body further includes a rotating fitting part, which is disposed at the first position. When the rotating fitting part rotates around the lifting body, the rotating fitting part is used to guide and limit the connecting arm.

6. The substrate processing apparatus according to claim 4, characterized in that, The lifting unit is provided with a first protrusion, and the connecting arm is provided with a first groove matching the first protrusion. Through the cooperation between the first protrusion and the first groove, the lifting unit and the connecting arm can be detachably connected.

7. The substrate processing apparatus according to claim 4, wherein The rotating part is provided with a second protrusion, and the connecting arm is provided with a second groove matching the second protrusion. Through the cooperation of the second protrusion and the second groove, the rotating part and the connecting arm are detachably connected.

8. The substrate processing apparatus according to claim 1, wherein, The reaction chamber includes 1 to 2 independent heating areas.

9. The substrate processing apparatus according to claim 1, wherein, The wafer boat is configured to carry less than or equal to 60 substrates.

10. The substrate processing apparatus according to claim 9, wherein, The wafer boat can carry less than or equal to 30 substrates.

11. The substrate processing apparatus according to claim 1, wherein, The wafer boat is configured such that, in a substrate processing process, 1 to 5 dummy wafers are placed in a top area of the wafer boat, and 1 to 5 dummy wafers are placed in a bottom area of the wafer boat.

12. The substrate processing apparatus according to claim 2, wherein, A plurality of the process modules are provided, and one or more substrate transfer devices are provided. The process modules are arranged around the substrate transfer device, and each substrate transfer device transfers substrates to a specific one or more process modules.

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