System, method, apparatus, medium and computer program product for semiconductor detection

Abstract

The embodiment of the invention provides a system, method and equipment for semiconductor detection, a computer readable storage medium and a computer program product, and relates to the field of semiconductor device detection. The system includes a deflector, an aperture array, and a controller. The controller is configured to: in a first mode, control the deflector such that a first electron beam passing through the deflector enters a sample to be measured through one or more first apertures in the aperture array; and in the second mode, the deflector is controlled to enable the second electron beam passing through the deflector to enter the sample to be measured through one or more second apertures in the aperture array. In this way, the electron beam can enter the sample to be detected through different apertures of the aperture array in different modes by utilizing the deflector, so that the switching between the two modes in the detection process is conveniently realized.

Description

Technical Field

[0001] Embodiments of the present disclosure mainly relate to the field of semiconductor device detection. More specifically, embodiments of the present disclosure relate to systems, methods, devices, computer-readable storage media, and computer program products for semiconductor detection. Background Art

[0002] Semiconductor detection is an important link in the semiconductor design and manufacturing process, and is very important for chip yield control and cost control. As the integrated circuit industry develops towards more advanced process nodes, the use of electron beam inspection equipment is becoming more and more common. Electron beam inspection equipment utilizes the interaction between an electron beam and a sample to obtain sample information. An important application of electron beam inspection equipment is to detect the continuity of the metal interconnect layer of a chip, which is usually referred to as voltage contrast defect (VC defect) detection. In some detection processes such as VC defect detection, the electron beam inspection equipment needs to switch between a pre-charge mode and an imaging mode to achieve the detection effect. Therefore, there is a need for an electron beam inspection system that can conveniently switch between different operating modes. Summary of the Invention

[0003] Some related detection systems cannot conveniently switch between multiple modes of electron beam detection. Embodiments of the present disclosure provide a solution for semiconductor detection to at least partially solve the above problems.

[0004] In a first aspect of the present disclosure, a system for semiconductor detection is provided. The system includes: a deflector, an aperture array, and a controller. The controller is configured to: in a first mode, control the deflector to cause a first electron beam passing through the deflector to enter a sample to be measured through one or more first apertures in the aperture array; and in a second mode, control the deflector to cause a second electron beam passing through the deflector to enter the sample to be measured through one or more second apertures in the aperture array. In this way, the deflector is used to make the electron beam enter the sample to be measured through different apertures of the aperture array in different modes, so as to conveniently switch between the two modes during the detection process.

[0005] In some embodiments of the first aspect, the first mode is a pre-charge mode, in which the deflector is controlled to deflect the direction of the first electron beam so that the deflected first electron beam accumulates charge on the sample to be measured through the one or more first apertures. The second mode is an imaging mode, in which the deflector is controlled not to deflect the direction of the first electron beam, so that the second electron beam is incident on the sample to be measured that has already accumulated charge to image the sample to be measured. In this way, the pre-charge mode can be switched to by deflecting the electron beam.

[0006] In some embodiments of the first aspect, the first mode is a pre-charging mode, in which the deflector is controlled not to deflect the direction of the first electron beam, so that the first electron beam accumulates charge on the sample to be measured by passing through the one or more first apertures, and the second mode is an imaging mode, in which the deflector is controlled to deflect the direction of the second electron beam, so that the deflected second electron beam is incident on the sample to be measured that has already accumulated charge through the one or more second apertures to image the sample to be measured. In this way, the imaging mode can be switched by deflecting the electron beam.

[0007] In some embodiments of the first aspect, the size of the second aperture in the one or more second apertures is smaller than the size of the first aperture in the first or more first apertures. In some embodiments of the first aspect, the one or more second apertures are configured to divide the second electron beam into an array of multiple secondary electron beams. In some embodiments of the first aspect, the first electron beam and the second electron beam are of the same origin. In this way, an electron beam with a larger beam diameter can be achieved in the pre-charging mode to provide charging efficiency, while an electron beam with a smaller beam diameter can be achieved in the imaging mode to achieve fine imaging.

[0008] In some embodiments of the first aspect, the system further includes a displacement stage for placing the sample to be measured, and the controller is further configured to: move the displacement stage so that the target area of the sample to be measured is aligned with the one or more first apertures in the first mode, and the target area is aligned with the one or more second apertures in the second mode.

[0009] In some embodiments of the first aspect, the deflector is a first deflector, the system further includes a second deflector, and the controller is further configured to: in the first mode, control the second deflector so that the first electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more first apertures; and in the second mode, control the second deflector so that the second electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more second apertures.

[0010] In some embodiments of the first aspect, the controller is further configured to: in the first mode, control the second deflector so that the first electron beam passing through the first deflector and the second deflector enters the sample under test through the one or more first apertures in a first direction perpendicular to the surface of the sample under test; and in the second mode, control the second deflector so that the second electron beam passing through the first deflector and the second deflector enters the sample under test through the one or more second apertures in a second direction perpendicular to the surface of the sample under test. In this way, the alignment difficulty between the aperture array, the lens group and the sample under test can be reduced.

[0011] In some embodiments of the first aspect, the system further includes an objective lens array configured to focus at least one of the first electron beam or the second electron beam. In this way, the beam current density of the electron beam for the region of interest can be increased, so as to accumulate charges in the region of interest specifically and improve the pre-charging efficiency.

[0012] In a second aspect of the present disclosure, a method for semiconductor detection is provided. The method includes: in a first mode, controlling a deflector so that a first electron beam passing through the deflector enters a sample under test through one or more first apertures in an aperture array; and in a second mode, controlling the deflector so that a second electron beam passing through the deflector enters the sample under test through one or more second apertures in the aperture array. In this way, the deflector is used to make the electron beam enter the sample under test through different apertures of the aperture array in different modes, so as to conveniently switch between the two modes during the detection process.

[0013] In some embodiments of the second aspect, the first mode is a pre-charging mode, in which the deflector is controlled to deflect the direction of the first electron beam so that the deflected first electron beam passes through the one or more first apertures to accumulate charges on the sample under test, and the second mode is an imaging mode, in which the deflector is controlled not to deflect the direction of the first electron beam so that the second electron beam enters the sample under test that has already accumulated charges to image the sample under test. In this way, the deflector is used to make the electron beam enter the sample under test through different apertures of the aperture array in different modes, so as to conveniently switch between the two modes during the detection process.

[0014] In some embodiments of the second aspect, the first mode is a pre-charge mode, in which the deflector is controlled not to deflect the direction of the first electron beam, so that the first electron beam accumulates charge on the sample to be measured by passing through the one or more first apertures, and the second mode is an imaging mode, in which the deflector is controlled to deflect the direction of the second electron beam, so that the deflected second electron beam passes through the one or more second apertures and is incident on the sample to be measured that has already accumulated charge to image the sample to be measured. In this way, the pre-charge mode can be switched to by deflecting the electron beam. In this way, the imaging mode can be switched to by deflecting the electron beam.

[0015] In some embodiments of the second aspect, the size of the second aperture in the one or more second apertures is smaller than the size of the first aperture in the first or more first apertures. In some embodiments of the second aspect, the one or more second apertures are configured to divide the second electron beam into an array of multiple secondary electron beams. In some embodiments of the second aspect, the first electron beam and the second electron beam are of the same origin. In this way, an electron beam with a larger beam diameter can be achieved in the pre-charge mode, while an electron beam with a smaller beam diameter can be achieved in the imaging mode.

[0016] In some embodiments of the second aspect, the method further includes: moving the displacement stage on which the sample to be measured is placed, so that the target area of the sample to be measured is aligned with the one or more first apertures in the first mode, and the target area is aligned with the one or more second apertures in the second mode. In some embodiments of the second aspect, the method further includes: focusing at least one of the first electron beam or the second electron beam by using an objective lens array.

[0017] In some embodiments of the second aspect, the deflector is a first deflector, and the method further includes: in the first mode, controlling a second deflector so that the first electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more first apertures; and in the second mode, controlling the second deflector so that the second electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more second apertures.

[0018] In some embodiments of the second aspect, in the first mode, the second deflector is controlled such that the first electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more first apertures in a first direction perpendicular to the surface of the sample to be measured; and in the second mode, the second deflector is controlled such that the second electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more second apertures in a second direction perpendicular to the surface of the sample to be measured. In this way, by using the electron beam passing through the aperture in the vertical direction, the alignment difficulty between the aperture array, the lens group and the sample to be measured can be reduced.

[0019] In a third aspect of the present disclosure, there is provided an electronic device, including: at least one computing unit; at least one memory coupled to the at least one computing unit and storing instructions for execution by the at least one computing unit, the instructions, when executed by the at least one computing unit, causing the device to implement the method provided in the second aspect.

[0020] In a fourth aspect of the present disclosure, there is provided a computer-readable storage medium having a computer program stored thereon, wherein the computer program is executed by a processor to implement the method provided in the second aspect.

[0021] In a fifth aspect of the present disclosure, there is provided a computer program product including computer-executable instructions that, when executed by a processor, implement some or all of the steps of the method in the second aspect.

[0022] It can be understood that the electronic device in the third aspect, the computer storage medium in the fourth aspect, or the computer program product in the fifth aspect provided above are all used to execute the method provided in the second aspect. Therefore, the explanations or descriptions regarding the second aspect also apply to the third aspect, the fourth aspect, and the fifth aspect. In addition, the beneficial effects achievable by the third aspect, the fourth aspect, and the fifth aspect can refer to the beneficial effects in the corresponding method, which will not be elaborated here. Description of the Drawings

[0023] In combination with the drawings and with reference to the following detailed description, the above and other features, advantages, and aspects of the embodiments of the present disclosure will become more apparent. In the drawings, the same or similar reference numerals denote the same or similar elements, where:

[0024] Figure 1 shows an exemplary environment diagram for semiconductor detection according to some embodiments of the present disclosure;

[0025] Figure 2 shows a flowchart of an exemplary process for semiconductor detection according to some embodiments of the present disclosure;

[0026] Figure 3 Shows a schematic diagram of an exemplary multi-electron beam detection system according to some embodiments of the present disclosure;

[0027] Figure 4 Shows a schematic diagram of exemplary components of a detection system according to some embodiments of the present disclosure;

[0028] Figure 5 Shows a schematic diagram of an exemplary detection system including a two-stage deflector according to some embodiments of the present disclosure;

[0029] Figure 6 Shows a cross-sectional view of an exemplary deflector according to some embodiments of the present disclosure;

[0030] Figure 7 Shows a block diagram of a device for semiconductor detection according to some embodiments of the present disclosure; and

[0031] Figure 8 Shows a block diagram of a computing device capable of implementing multiple embodiments of the present disclosure. Detailed Description of Specific Embodiments

[0032] Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Instead, these embodiments are provided to more thoroughly and completely understand the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are for illustrative purposes only and are not intended to limit the scope of protection of the present disclosure.

[0033] In the description of the embodiments of the present disclosure, the term "comprising" and its like should be understood as an open inclusion, that is, "including but not limited to". The term "based on" should be understood as "at least partially based on". The term "one embodiment" or "the embodiment" should be understood as "at least one embodiment". The terms "first", "second", etc. may refer to different or the same objects. There may also be other explicit and implicit definitions below.

[0034] As briefly mentioned above, an electron beam inspection device can detect VC defects in a wafer for analyzing failed contact electrodes, vias, etc. Compared with traditional optical inspection devices, the electron beam inspection device plays an irreplaceable role in detecting VC defects. The basic principle of VC defect detection is that when the electron beam scans the chip interconnect holes, some open or shorted interconnect holes will generate a potential difference different from that of normal hole positions, thus generating black or white grayscale difference signals in the electron optical imaging. To make the grayscale difference signals more obvious to increase the defect detection rate, the wafer is usually pre-charged with an electron beam, so that these defective hole positions can establish a sufficient potential difference in a short time, thereby generating defect signals.

[0035] Generally speaking, the pre-charging function is an indispensable function in semiconductor electron beam inspection devices. Currently, electron beam inspection devices usually use the pre-charging mode and the imaging mode when detecting VC defects. In the pre-charging mode, a certain amount of charge can be accumulated on the sample to be measured in advance. When there are failed vias or contact electrodes in the sample to be measured, the charge accumulation in the defective area is different from that in the normal area. In the imaging mode, when the electron beam is emitted onto the surface of the sample to be measured, the secondary electron scattering generated in the normal area and the defective area is different, so that there is a contrast between the normal area and the defective area in the detection image formed by detecting secondary electrons. Using the pre-charging technology, the contrast in the detection image is enhanced, so that the grayscale difference between the VC defective area and the normal area can be more clearly distinguished to improve the detection effect.

[0036] Currently, some pre-charging technologies have been proposed. In some solutions, primary beam flooding can be used for pre-charging. Specifically, in the pre-charging mode, the primary electron beam of the electron gun can be turned on to globally pre-charge the target area of the sample to be measured with an enlarged irradiation area and a lower energy (usually 100 - 500 eV) to accumulate charges on the sample surface. After the pre-charging is completed, the imaging mode can be switched, and the primary electron beam is used to scan the sample to be measured for imaging. However, in these solutions, the primary electron beam needs to be modulated to meet the requirements for the electron beam in different modes. Generally, a larger beam diameter of the electron beam is required in the pre-charging mode to achieve efficient global pre-charging, and a smaller beam diameter can be used in the imaging mode to achieve fine scanning. This modulation process will increase the switching time between the pre-charging mode and the imaging mode.

[0037] In some other solutions, an additional electron gun can be utilized for pre - charging. In the pre - charging mode, a flooding gun can be used to emit a large - area, low - energy (usually 100 - 1000 eV) electron beam to bombard the surface of the sample to be measured at a relatively low speed, thereby accumulating uniform charges on the surface of the sample to be measured. After the pre - charging is completed, it can be switched to the imaging mode. In the imaging mode, the main electron beam can be used for imaging operations. However, the introduction of an additional electron gun will increase the complexity of the detection system. In addition, when switching between the two modes, the sample to be measured needs to be moved to the beam range of the corresponding electron gun.

[0038] To at least partially solve the above - mentioned problems and other potential problems, various embodiments of the present disclosure provide a system, method, device, apparatus, computer - readable storage medium, and computer program product for semiconductor detection. The system includes: a deflector, an aperture array, and a controller. The controller is configured to: in a first mode, control the deflector to cause a first electron beam passing through the deflector to enter the sample to be measured through one or more first apertures in the aperture array; and in a second mode, control the deflector to cause a second electron beam passing through the deflector to enter the sample to be measured through one or more second apertures in the aperture array. In this way, by using the deflector to make the electron beam enter the sample to be measured through different apertures in the aperture array in the two modes, the switching between the two modes during the detection process can be conveniently achieved.

[0039] The following describes various example embodiments of the present disclosure with reference to the accompanying drawings. Figure 1 An example environment diagram for semiconductor detection according to some embodiments of the present disclosure is shown. Figure 1 An example first mode 110 and an example second mode 120 of a detection system according to some embodiments of the present disclosure are shown. It should be understood that the "first mode" and the "second mode" are only used to distinguish the two modes and do not limit the specific operations in each mode. As Figure 1 shown, the detection system according to an embodiment of the present disclosure includes a deflector and an aperture array. The deflector is configured to deflect the direction of the electron beam passing through the deflector to pass through different apertures in the aperture array. Although not shown, the detection system further includes a controller configured to control the deflector so that the electron beam enters the sample to be measured through different apertures in the first mode 110 and the second mode 120.

[0040] In some embodiments, the first mode 110 can be a pre - charging mode. In the pre - charging mode, the deflector deflects the electron beam passing through the deflector to pass through a first aperture in the aperture array ( Figure 1incident on the sample to be measured through the left aperture in []. The second mode 120 can be an imaging mode. In the imaging mode, the deflector causes the electron beam passing through the deflector not to deflect, so as to be incident on the sample to be measured through the second aperture ( Figure 1 the right aperture in []) of the aperture array. The size of the first aperture can be larger than the size of the second aperture, so that a larger beam diameter can be achieved in the pre-charging mode.

[0041] In some embodiments, the second mode 120 can be a pre-charging mode and the first mode 110 can be an imaging mode. In the pre-charging mode, the deflector causes the electron beam not to deflect, so as to be incident on the sample to be measured through the second aperture (right aperture) of the aperture array. In the imaging mode, the deflector causes the electron beam to deflect, so as to be incident on the sample to be measured through the first aperture (left aperture) of the aperture array. In some embodiments, the sample to be measured can be placed obliquely so that the deflected electron beam can be perpendicularly incident on the surface of the sample to be measured. In some embodiments, an additional deflector can be used so that the electron beam passing through the additional deflector can be perpendicularly incident on the surface of the sample to be measured.

[0042] It should be understood that Figure 1 the first mode 110 and the second mode 120 shown are only exemplary and do not constitute a limitation on the scope of the present disclosure. Although not shown, in some embodiments, the deflector can be controlled to deflect the electron beam in both the pre-charging mode and the imaging mode. For example, in the pre-charging mode, the deflector can cause the electron beam to undergo a first deflection to be incident on the sample to be measured through the first aperture. In the imaging mode, the deflector can cause the electron beam to undergo a second deflection to be incident on the sample to be measured through the second aperture.

[0043] Figure 2 A flowchart of an example process 200 for semiconductor detection according to some embodiments of the present disclosure is shown. The process 200 can be implemented by any suitable computing unit. For example, it can be executed by a computer or other electronic device with computing capabilities. Specifically, for example, the controller can be implemented by a processor of a computer according to the data and / or instructions stored in the memory to execute the process 200.

[0044] As Figure 2 shown, in block 210, in the first mode, the controller controls the deflector so that the first electron beam passing through the deflector is incident on the sample to be measured through one or more first apertures of the aperture array. In block 220, in the second mode, the controller controls the deflector so that the second electron beam passing through the deflector is incident on the sample to be measured through one or more second apertures of the aperture array. One or more first apertures and one or more second apertures are different apertures in the aperture array.

[0045] In some embodiments, the control deflector may include controlling the deflector to deflect an electron beam passing through the deflector, for example, deflecting the direction of the electron beam to a specific direction. In other embodiments, the control deflector may include controlling the deflector not to deflect the electron beam passing through the deflector, so that the electron beam maintains its initial direction.

[0046] In some embodiments, the first mode is a pre-charge mode, in which the deflector is controlled to deflect the direction of the first electron beam so that the deflected first electron beam accumulates charge on the sample to be measured through one or more first apertures. The second mode is an imaging mode, in which the deflector is controlled not to deflect the direction of the first electron beam, so that the second electron beam is incident on the sample to be measured that has already accumulated charge to image the sample to be measured.

[0047] In some embodiments, the first mode is a pre-charge mode, in which the deflector is controlled not to deflect the direction of the first electron beam, so that the first electron beam accumulates charge on the sample to be measured through one or more first apertures. The second mode is an imaging mode, in which the deflector is controlled to deflect the direction of the second electron beam so that the deflected second electron beam is incident on the sample to be measured that has already accumulated charge through one or more second apertures to image the sample to be measured.

[0048] In some embodiments, the electron beam in the imaging mode and the electron beam in the pre-charge mode may be of the same origin. In other words, the same electron beam emitted by the electron gun can be used in the pre-charge mode and the imaging mode without additional modulation of the electron beam. In this way, the switching between the pre-charge mode and the imaging mode can be efficiently achieved only by controlling the deflector. Additionally, the electron beam in the pre-charge mode and / or the imaging mode can be modulated.

[0049] In some embodiments, the size of the aperture through which the electron beam passes in the pre-charge mode may be larger than the size of the aperture through which the electron beam passes in the imaging mode. For example, the size of the aperture for pre-charging may be in the millimeter range. In this way, in the pre-charge mode, the electron beam can be incident on the surface of the sample to be measured with a larger beam diameter to achieve pre-charging over a larger area.

[0050] In some embodiments, the aperture through which the electron beam passes in the imaging mode may divide the electron beam into an array of multiple secondary electron beams to achieve multi-electron beam detection. For example, an array of smaller apertures can be used to divide the electron beam into an array of multiple secondary electron beams. Figure 3 A schematic diagram of an example multi-electron beam detection system according to some embodiments of the present disclosure is shown. Figure 3 The pre-charge mode 310 and the imaging mode 320 of the multi-electron beam detection system are shown.

[0051] As Figure 3As shown, in the pre-charging mode 310 of the multi-electron beam detection system, the deflector can deflect the electron beam to be incident on the sample to be measured through a single larger aperture of the aperture array. In the imaging mode 320 of the multi-electron beam detection system, the deflector can keep the electron beam undeflected and be incident on the sample to be measured through an array of multiple smaller apertures of the aperture array. In the case of multi-electron beam imaging, the beam diameter of a single secondary electron beam is small, so that fine imaging of the sample to be measured can be achieved.

[0052] Figure 4 A schematic diagram showing exemplary components of a detection system according to some embodiments of the present disclosure is shown. Figure 4 The pre-charging mode 410 and the imaging mode 420 of the detection system are shown. As Figure 4 shown, the detection system may include a focusing lens for focusing the electron beam emitted by the electron gun. In the pre-charging mode 410, the focused electron beam is deflected by the first deflector and is incident on the semiconductor wafer through a single larger aperture in the aperture array and the corresponding objective lens in the objective lens array, so as to accumulate charges in the target area. In the imaging mode, the focused electron beam passes through the first deflector without being deflected and continues to pass through the scanning deflector in the initial direction. The scanning deflector is configured to deflect the electron beam passing through the scanning deflector by a small angle and be incident on the semiconductor wafer through the corresponding objective lens in the objective lens array, so as to achieve scanning imaging of the target area of the semiconductor wafer. In some embodiments, one or more larger apertures for the pre-charging mode and one or more smaller apertures for the imaging mode may be set by opening holes in the micro-electro-mechanical systems (MEMS) lens group chip of the electron beam detection system.

[0053] In some embodiments, the detection system may further include a displacement stage for placing the sample to be measured to move the sample to be measured. As Figure 4 shown, in the pre-charging mode 410, the displacement stage can align the target area of the sample to be measured with the aperture for pre-charging, so that the electron beam can be incident on the target area to accumulate charges. In the imaging mode 420, the displacement stage can move the sample to be measured so that the target area can be aligned with the aperture for imaging for imaging.

[0054] In some embodiments, the detection system may further include a second deflector for deflecting the electron beam. Figure 5 A schematic diagram showing an exemplary detection system including a two-stage deflector according to some embodiments of the present disclosure is shown. Figure 5 The first pre-charging mode 510 and the second pre-charging mode 520 of the detection system including a two-stage deflector are shown. As Figure 5As shown, in the first pre-charge mode 510, the focused electron beam is deflected in a first direction through the first deflector and the second deflector to be incident on the target area of the semiconductor wafer through a larger aperture and the corresponding objective lens array.

[0055] In some embodiments, the first deflector and the second deflector can be controlled such that the electron beam is deflected in a direction perpendicular to the surface of the semiconductor wafer to be incident on the target area. In this way, the alignment difficulty between the aperture array, the lens group and the sample to be measured can be reduced.

[0056] In the second pre-charge mode 520, the focused electron beam is deflected in a direction perpendicular to the surface of the semiconductor wafer through the first deflector and the second deflector to be incident on the target area of the semiconductor wafer through a larger aperture and the corresponding objective lens array. In addition, the objective lens array can focus the electron beam to increase the beam current density of the electron beam for the area of interest, so as to accumulate charges for the area of interest specifically and improve the pre-charge efficiency.

[0057] It should be understood that Figure 5 the detection system shown in is only exemplary and does not constitute a limitation on the scope of the present disclosure. The detection system can include one or more deflectors. In some embodiments, one or more deflectors can be used in the pre-charge mode to deflect the electron beam. Additionally or alternatively, one or more deflectors can be used in the imaging mode to deflect the electron beam.

[0058] Figure 6 A cross-sectional view 600 of an exemplary deflector according to some embodiments of the present disclosure is shown. In some implementations, the electrostatic deflector can be composed of a quadrupole, and the electric field applied to each pole can be, for example, 200V. The inner diameter dimension of the quadrupole can be 10 to 20 millimeters. In an embodiment where the detection system includes a two-stage deflector, the first deflector and the second deflector can be quadrupoles of the same specification.

[0059] In some embodiments, in the imaging mode, the deflector can be at 0V, that is, no voltage is applied, so that the electron beam passing through the deflector is not deflected. In the pre-charge mode, the quadrupole can be switched to the corresponding deflection electrode, so that the electron beam can be instantaneously deflected to the specified direction. Therefore, compared with the traditional main electron beam modulation scheme, the switching rate of the deflection electrode is faster, and the switching between the pre-charge mode and the imaging mode can be achieved in a very short time. It should be understood that Figure 6 the deflector shown is only exemplary and does not constitute a limitation on the scope of the present disclosure. Any suitable deflector can be applied to deflect the direction of the electron beam.

[0060] As mentioned above with reference to Figures 1 to 6A system and method for semiconductor detection according to an embodiment of the present disclosure are described. In the solution of the present disclosure, by using a deflection electrode to deflect an electron beam, the switching between a pre-charge mode and an imaging mode can be conveniently achieved, the pre-charge efficiency can be improved, and the throughput of the detection device can be increased. In the detection system according to an embodiment of the present disclosure, the distance between the aperture for the pre-charge mode and the aperture for the imaging mode can be short. Compared with the solution of introducing an additional electron gun, the movement of the sample to be measured can be reduced, thereby improving the detection efficiency. The structure of the detection system provided by this solution is simpler, more reliable, and the beam current of the main electron beam can be greater than the beam current of the electron beam of the introduced additional electron gun.

[0061] Figure 7 FIG. shows a block diagram of a device 700 for semiconductor detection according to some embodiments of the present disclosure. Specifically, the device 700 may include a plurality of units, modules, or circuit systems for performing corresponding steps in the process 200 as Figure 2 discussed. As Figure 7 shown, the device 700 includes a first control unit 710 and a second control unit 720. The first control unit 710 is configured to control a deflector in a first mode so that a first electron beam passing through the deflector is incident on a sample to be measured through one or more first apertures in an aperture array. The second control unit 720 is configured to control the deflector in a second mode so that a second electron beam passing through the deflector is incident on the sample to be measured through one or more second apertures in the aperture array.

[0062] In some embodiments, the first control unit 710 is configured to control the deflector to deflect the direction of the first electron beam so that the deflected first electron beam accumulates charge on the sample to be measured through the one or more first apertures, and the second control unit 720 is configured to control the deflector not to deflect the direction of the first electron beam so that the second electron beam is incident on the sample to be measured that has already accumulated charge to image the sample to be measured.

[0063] In some embodiments, the first control unit 710 is configured to control the deflector not to deflect the direction of the first electron beam so that the first electron beam accumulates charge on the sample to be measured through the one or more first apertures, and the second control unit 720 is configured to control the deflector to deflect the direction of the second electron beam so that the deflected second electron beam is incident on the sample to be measured that has already accumulated charge to image the sample to be measured.

[0064] In some embodiments, the first control unit 710 is configured to control the first deflector and the second deflector such that the first electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more first apertures. The second control unit 720 is configured to control the first deflector and the second deflector such that the second electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more second apertures.

[0065] In some embodiments, the first control unit 710 is configured to control the first deflector and the second deflector such that the first electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more first apertures in a first direction perpendicular to the surface of the sample to be measured. The second control unit 720 is configured to control the first deflector and the second deflector such that the second electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more second apertures in a second direction perpendicular to the surface of the sample to be measured.

[0066] In some embodiments, the apparatus 700 further includes a displacement unit configured to move the displacement stage on which the sample to be measured is placed so that the target area of the sample to be measured is aligned with the one or more first apertures in the first mode and the target area is aligned with the one or more second apertures in the second mode.

[0067] Figure 8 FIG. shows a schematic block diagram of an exemplary device 800 that may be used to implement embodiments of the present disclosure. The device 800 may be used to implement a method for semiconductor detection according to embodiments of the present disclosure, such as Figure 2 the process 200 shown in. As shown, the device 800 includes a computing unit 801 that can perform various appropriate actions and processes according to computer program instructions stored in a random access memory (RAM) 803 and / or a read-only memory (ROM) 802 or computer program instructions loaded from a storage unit 808 into the RAM 803 and / or the ROM 802. In the RAM 803 and / or the ROM 802, various programs and data required for the operation of the device 800 may also be stored. The computing unit 801, the RAM 803, and / or the ROM 802 are connected to each other through a bus 804. An input / output (I / O) interface 805 is also connected to the bus 804.

[0068] Multiple components in device 800 are connected to I / O interface 805, including: an input unit 806, such as a keyboard, a mouse, etc.; an output unit 807, such as various types of displays, speakers, etc.; a storage unit 808, such as a disk, an optical disc, etc.; and a communication unit 809, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 809 allows device 800 to exchange information / data with other devices via a computer network such as the Internet and / or various telecommunication networks.

[0069] The computing unit 801 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 801 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 801 executes the various methods and processes described above, such as process 200. For example, in some embodiments, process 200 can be implemented as a computer software program that is tangibly contained in a machine-readable medium, such as the storage unit 808. In some embodiments, part or all of the computer program can be loaded and / or installed onto device 800 via the RAM and / or ROM and / or the communication unit 809. When the computer program is loaded into the RAM and / or ROM and executed by the computing unit 801, the steps of the process described above can be performed. Alternatively, in other embodiments, the computing unit 801 can be configured to execute the process in any other suitable manner (e.g., by means of firmware).

[0070] In the above embodiments, the method flow can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a server or a terminal, the processes or functions described in the embodiments of the present application are generated in whole or in part. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from a website, computer, server, or data center to another website, computer, server, or data center in a wired manner (such as coaxial optical cable, optical fiber, digital subscriber line) or a wireless manner (such as infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium accessible by the server or the terminal, or a data storage device such as a server or a data center that includes one or more integrated available media. The available medium can be a magnetic medium (such as a floppy disk, hard disk, and magnetic tape), an optical medium (such as a digital video disk (DVD)), or a semiconductor medium (such as a solid-state drive).

[0071] In addition, although the operations are depicted in a particular order, this should be understood as requiring that the operations be performed in the particular order shown or in a sequential order, or that all of the illustrated operations be performed to achieve the desired result. In certain circumstances, multitasking and parallel processing may be advantageous. Similarly, although a number of specific implementation details are included in the above discussion, these should not be construed as limiting the scope of the present disclosure. Certain features described in the context of separate embodiments can also be implemented in combination in a single implementation. Conversely, the various features described in the context of a single implementation can also be implemented separately or in any suitable sub-combination in multiple implementations.

[0072] Although the subject matter has been described in language specific to structural features and / or method logical acts, it should be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are merely example forms of implementing the claims.

Claims

1. A system for semiconductor detection, characterized in that, Comprising: A deflector; An aperture array; And A controller configured to: In a first mode, control the deflector to cause a first electron beam passing through the deflector to be incident on a sample to be measured through one or more first apertures in the aperture array; And In a second mode, control the deflector to cause a second electron beam passing through the deflector to be incident on the sample to be measured through one or more second apertures in the aperture array.

2. The system according to claim 1, wherein The first mode is a pre-charging mode, in which the deflector is controlled to deflect the direction of the first electron beam so that the deflected first electron beam accumulates charge on the sample to be measured through the one or more first apertures, and The second mode is an imaging mode, in which the deflector is controlled not to deflect the direction of the first electron beam so that the second electron beam is incident on the sample to be measured that has already accumulated charge to image the sample to be measured.

3. The system according to claim 1, wherein The first mode is a pre-charging mode, in which the deflector is controlled not to deflect the direction of the first electron beam so that the first electron beam accumulates charge on the sample to be measured through the one or more first apertures, and The second mode is an imaging mode, in which the deflector is controlled to deflect the direction of the second electron beam so that the deflected second electron beam is incident on the sample to be measured that has already accumulated charge to image the sample to be measured.

4. The system according to any one of claims 1 to 3, characterized in that The size of the second aperture in the one or more second apertures is smaller than the size of the first aperture in the first or more first apertures.

5. The system according to any one of claims 1 to 4, characterized in that The one or more second apertures are configured to divide the second electron beam into an array of multiple secondary electron beams.

6. The system according to any one of claims 1 to 5, characterized in that, The first electron beam and the second electron beam are of the same origin.

7. The system according to any one of claims 1 to 6, characterized in that The deflector is a first deflector, the system further includes a second deflector, and the controller is further configured to: In the first mode, control the second deflector to cause the first electron beam passing through the first deflector and the second deflector to be incident on the sample to be measured through the one or more first apertures; And In the second mode, control the second deflector to cause the second electron beam passing through the first deflector and the second deflector to be incident on the sample to be measured through the one or more second apertures.

8. The system according to claim 7, wherein The controller is further configured to: In the first mode, control the second deflector to cause the first electron beam passing through the first deflector and the second deflector to be incident on the sample to be measured through the one or more first apertures in a first direction, the first direction being perpendicular to the surface of the sample to be measured; And In the second mode, control the second deflector to cause the second electron beam passing through the first deflector and the second deflector to be incident on the sample to be measured through the one or more second apertures in a second direction, the second direction being perpendicular to the surface of the sample to be measured.

9. The system according to any one of claims 1 to 8, characterized in that, The system further includes a displacement stage for placing the sample to be measured, and the controller is further configured to: Move the displacement stage so that in the first mode, the target area of the sample to be measured is aligned with the one or more first apertures, and in the second mode, the target area is aligned with the one or more second apertures.

10. The system according to any one of claims 1 to 9, characterized in that, The system further includes an objective lens array configured to focus at least one of the first electron beam or the second electron beam.

11. A method for semiconductor detection, characterized in that, Including: In the first mode, control the deflector so that the first electron beam passing through the deflector is incident on the sample to be measured through one or more first apertures in the aperture array; And In the second mode, control the deflector so that the second electron beam passing through the deflector is incident on the sample to be measured through one or more second apertures in the aperture array.

12. The method according to claim 11, wherein The first mode is a pre-charging mode, in which the deflector is controlled to deflect the direction of the first electron beam so that the deflected first electron beam accumulates charge on the sample to be measured through the one or more first apertures, and The second mode is an imaging mode, in which the deflector is controlled not to deflect the direction of the first electron beam so that the second electron beam is incident on the sample to be measured that has already accumulated charge to image the sample to be measured.

13. The method according to claim 11, wherein The first mode is a pre-charging mode, in which the deflector is controlled not to deflect the direction of the first electron beam so that the first electron beam accumulates charge on the sample to be measured through the one or more first apertures, and The second mode is an imaging mode, in which the deflector is controlled to deflect the direction of the second electron beam so that the deflected second electron beam is incident on the sample to be measured that has already accumulated charge to image the sample to be measured.

14. The method according to any one of claims 11 to 13, characterized in that The size of the second aperture in the one or more second apertures is smaller than the size of the first aperture in the first or more first apertures.

15. The method according to any one of claims 11 to 14, characterized in that, The one or more second apertures are configured to divide the second electron beam into an array of multiple secondary electron beams.

16. The method according to any one of claims 11 to 15, characterized in that The first electron beam and the second electron beam are homologous.

17. The method according to any one of claims 11 to 16, characterized in that The deflector is a first deflector, and the method further includes: In the first mode, control the second deflector so that the first electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more first apertures; and In the second mode, control the second deflector so that the second electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more second apertures.

18. The method according to claim 17, wherein In the first mode, the second deflector is controlled such that the first electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more first apertures in a first direction perpendicular to the surface of the sample to be measured; and In the second mode, the second deflector is controlled such that the second electron beam passing through the first deflector and the second deflector is incident on the sample to be measured through the one or more second apertures in a second direction perpendicular to the surface of the sample to be measured.

19. The method according to any one of claims 11 to 18, characterized in that, The method further includes: Moving the displacement stage on which the sample to be measured is placed so that the target area of the sample to be measured is aligned with the one or more first apertures in the first mode and the target area is aligned with the one or more second apertures in the second mode.

20. The method according to any one of claims 11 to 19, characterized in that, The method further includes: Focusing at least one of the first electron beam or the second electron beam using an objective lens array.

21. An electronic device, comprising: At least one computing unit; At least one memory coupled to the at least one computing unit and storing instructions for execution by the at least one computing unit, the instructions when executed by the at least one computing unit cause the electronic device to perform the method according to any one of claims 11 to 20.

22. A computer-readable storage medium having stored thereon a computer program, the program when executed by a processor implements the method according to any one of claims 11 to 20.

23. A computer program product, comprising computer-executable instructions, wherein the computer-executable instructions when executed by a processor implement the method according to any one of claims 11 to 20.

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