Processing method of semiconductor long strip

Abstract

The processing method of the semiconductor long strip comprises the following steps: clamping the semiconductor long strip by two butted glass substrates, and coating an ultraviolet viscosity reducer between the semiconductor long strip and the glass substrates; carrying out first ultraviolet irradiation on the ultraviolet viscosity reducer to bond and fix the semiconductor long strip and the glass substrate; carrying out first roller pressing on the semiconductor long strip on the surface of the glass substrate; stopping the first-time ultraviolet irradiation, and performing second-time roller pressing on the semiconductor long strip on the surface of the glass substrate; and carrying out secondary ultraviolet irradiation on the ultraviolet viscosity reducer to separate the semiconductor long strip from the glass substrate. According to the method, the stress of the semiconductor long strip can be released and absorbed, so that the deformation of the semiconductor long strip is repaired, and the performance of elements on the semiconductor long strip is protected.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a method for processing semiconductor long strips. Background Art

[0002] A semiconductor long strip is an aggregate of semiconductor components. During the processing, the semiconductor long strip is cut from a wafer and is usually deformed under the influence of external forces. And this deformation is likely to cause the performance of the semiconductor long strip or independent semiconductor components. Therefore, how to improve this deformation is a current problem.

[0003] Traditional methods for improving this deformation mainly include grinding and heat treatment. However, both of these methods have certain problems. For example, grinding will cause the thinning of the semiconductor material, resulting in unnecessary over-processing; while in heat treatment, although the deformation is alleviated to some extent, it still cannot be well improved.

[0004] Therefore, there is an urgent need to provide a method for processing semiconductor long strips. Summary of the Invention

[0005] The purpose of the present invention is to provide a method for processing semiconductor long strips, which releases and absorbs the stress of the semiconductor long strips, thereby reducing the deformation of the semiconductor long strips and protecting the performance of the components on the semiconductor long strips.

[0006] To achieve the above purpose, the method for processing semiconductor long strips of the present invention includes the following steps:

[0007] The semiconductor long strip is clamped by two butted glass substrates, and an ultraviolet anti-adhesive agent is coated between the semiconductor long strip and the glass substrates;

[0008] The ultraviolet anti-adhesive agent is irradiated with ultraviolet light for the first time to bond and fix the semiconductor long strip and the glass substrates;

[0009] The semiconductor long strip is subjected to the first roller pressing on the surface of the glass substrate;

[0010] The first ultraviolet light irradiation is stopped, and the semiconductor long strip is subjected to the second roller pressing on the surface of the glass substrate; and

[0011] The ultraviolet anti-adhesive agent is irradiated with ultraviolet light for the second time to separate the semiconductor long strip and the glass substrates.

[0012] Compared with the prior art, in the method of the present invention, first, a semiconductor strip is clamped on two butt-jointed glass substrates, and an ultraviolet adhesion-reducing agent is coated between the semiconductor strip and the glass substrates. Then, after the first ultraviolet light irradiation, the semiconductor strip and the glass substrates are firmly bonded. Next, while irradiating with ultraviolet light, the semiconductor strip is subjected to the first roller pressing on the surface of the glass substrate, so that during the gradual adhesion reduction of the ultraviolet adhesion-reducing agent, the internal stress is released and absorbed through the roller pressing. After stopping the first ultraviolet light irradiation, the semiconductor strip is subjected to the second roller pressing to further reduce the internal stress. Finally, the semiconductor strip is separated from the glass substrate by the second ultraviolet light irradiation. Thus, after detection, the curvature of the semiconductor strip is improved from the original 15 μm to 1 - 2 μm. Therefore, the deformation of the semiconductor strip is effectively repaired to meet the production requirements, and this treatment method can protect the performance of the components on the semiconductor strip without causing damage to the components.

[0013] As an embodiment, the ultraviolet adhesion-reducing agent includes an acrylic pressure-sensitive adhesive resin, a photocurable resin, a photocurable monomer, a photoinitiator, and a curing agent.

[0014] As an embodiment, the light intensity of the first ultraviolet light irradiation is 1000 - 2500 mJ / cm 2 , and the irradiation time is 300 - 500 seconds.

[0015] Preferably, the first roller pressing and the second roller pressing use rubber rollers to apply pressure to the surface of the semiconductor strip.

[0016] As an embodiment, the time of the first roller pressing is 15 - 20 minutes.

[0017] As another embodiment, the time of the second roller pressing is 30 - 60 minutes.

[0018] Preferably, the light intensity of the second ultraviolet light irradiation is 1000 - 2500 mJ / cm 2 , and the irradiation time is 3 - 5 minutes.

[0019] As an embodiment, the coating thickness of the ultraviolet adhesion-reducing agent is 0.5 - 1.5 mm. Detailed implementation

[0020] To make the above objects, features, and advantages of the present application more apparent and understandable, the following describes the specific implementation manners of the present application in detail with reference to some embodiments. Many specific details are set forth in the following description to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0021] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0022] In the present application, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over", and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below", and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0023] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right", and similar expressions used herein are only for illustrative purposes and do not represent the only implementation manner.

[0024] The following further describes the method for processing a semiconductor elongated strip of the present invention with reference to embodiments, but does not limit the present invention thereby. The method of the present invention aims to provide a method for processing a semiconductor elongated strip to release and absorb the stress of the semiconductor elongated strip, thereby repairing the deformation of the semiconductor elongated strip and protecting the performance of the components on the semiconductor elongated strip.

[0025] In an embodiment of the method for processing a semiconductor elongated strip of the present invention, the following steps are included:

[0026] The semiconductor elongated strip is clamped by two butted glass substrates, and an ultraviolet adhesion-reducing agent is coated between the semiconductor elongated strip and the glass substrates;

[0027] Perform a first ultraviolet light irradiation on the ultraviolet tackifier to bond and fix the semiconductor strip and the glass substrate;

[0028] Perform a first roller pressing on the surface of the glass substrate;

[0029] Stop the first ultraviolet light irradiation and perform a second roller pressing on the surface of the glass substrate; and

[0030] Perform a second ultraviolet light irradiation on the ultraviolet tackifier to separate the semiconductor strip from the glass substrate.

[0031] In the method of the present invention, first, the semiconductor strip is clamped between two butt-jointed glass substrates, and an ultraviolet tackifier is coated between the semiconductor strip and the glass substrate. Then, after the first ultraviolet light irradiation, the semiconductor strip and the glass substrate are firmly bonded. Next, while irradiating with ultraviolet light, a first roller pressing is performed on the surface of the glass substrate on the semiconductor strip, so that during the gradual reduction of the viscosity of the ultraviolet tackifier, the internal stress is released and absorbed through the roller pressing. After stopping the first ultraviolet light irradiation, a second roller pressing is performed on the semiconductor strip to further reduce the internal stress. Finally, the semiconductor strip is separated from the glass substrate by the second ultraviolet light irradiation. Thus, the curvature of the semiconductor strip after detection is improved from the original 15 μm to 1 - 2 μm. Thus, the deformation of the semiconductor strip is effectively repaired to meet the production requirements, and this treatment method can protect the performance of the components on the semiconductor strip and will not cause damage to the components.

[0032] Specifically, first, the semiconductor strip is clamped between two opposite glass substrates, and an ultraviolet tackifier is coated between the semiconductor strip and the glass substrate. For example, the coating thickness of the ultraviolet tackifier is preferably 0.5 - 1.5 mm. The ultraviolet tackifier is a glue that has a viscosity reduction function with ultraviolet light irradiation. Specifically, the ultraviolet tackifier includes an acrylic pressure-sensitive adhesive resin, a photocurable resin, a photocurable monomer, a photoinitiator, and a curing agent. For example, it includes 60 - 80 parts of acrylic pressure-sensitive adhesive resin, 3 - 10 parts of photocurable resin, 1.5 - 7 parts of photocurable monomer, 0.5 - 2.5 parts of photoinitiator, and 2 - 5 parts of curing agent.

[0033] Next, perform a first ultraviolet light irradiation. Specifically, the light intensity of the first ultraviolet light irradiation is 1000 - 2500 mJ / cm 2, the irradiation time is 300 - 500 seconds. The purpose of this irradiation is to firmly adhere the semiconductor strip to the surface of the glass substrate, and the viscosity at this time is about 12 - 13 (N / in). During the first ultraviolet light irradiation, the first roller pressing is performed on the semiconductor strip on the surface of the glass substrate. Specifically, a rubber roller is rolled on the surface of at least one glass substrate, and pressure is applied to the surface of the semiconductor strip through the glass substrate for 15 - 20 minutes, so that during the gradual viscosity reduction of the ultraviolet viscosity reducer, the internal stress can be released and absorbed under the ultraviolet viscosity reducer. Then, the first ultraviolet light irradiation is stopped, and the second roller pressing is performed on the semiconductor strip on the surface of the glass substrate. The time of the second roller pressing is 30 - 60 minutes. After that, the ultraviolet lamp is restarted to irradiate the ultraviolet viscosity reducer, that is, the second ultraviolet light irradiation, and the purpose is to separate the semiconductor strip from the glass substrate. Specifically, the light intensity of this second ultraviolet light irradiation is 1000 - 2500 mJ / cm 2 , and the irradiation time is 3 - 5 minutes. After this treatment, the viscosity between the semiconductor strip and the glass substrate reaches 0.05 - 0.06 (N / in), which means that the ultraviolet viscosity reducer completely loses its viscosity, thereby separating the semiconductor strip, the ultraviolet viscosity reducer, and the glass substrate. After separation, the semiconductor strip is detected, and its curvature is improved from the original 15 μm to 1 - 2 μm.

[0034] In this embodiment, the glass substrate has good light transmittance, making the ultraviolet light irradiation more sufficient.

[0035] To sum up, in the present invention, first, the semiconductor strip is clamped between two butt - jointed glass substrates, and an ultraviolet viscosity reducer is coated between the semiconductor strip and the glass substrate. Then, after the first ultraviolet light irradiation, the semiconductor strip and the glass substrate are firmly bonded. Next, while irradiating with ultraviolet light, the first roller pressing is performed on the semiconductor strip on the surface of the glass substrate, so that during the gradual viscosity reduction of the ultraviolet viscosity reducer, the internal stress is released and absorbed through roller pressing. After stopping the first ultraviolet light irradiation, the second roller pressing is performed on the semiconductor strip to further reduce the internal stress. Finally, the semiconductor strip is separated from the glass substrate through the second ultraviolet light irradiation. Thus, after detection, the curvature of the semiconductor strip is greatly improved, effectively repairing the deformation of the semiconductor strip to meet the production requirements, and moreover, this treatment method can protect the performance of the components on the semiconductor strip and will not cause damage to the components.

[0036] The above - disclosed are only the preferred embodiments of the present invention. Of course, the scope of the rights of the present invention cannot be limited by this. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A method for processing a semiconductor elongated strip, characterized in that, It includes the following steps: The semiconductor elongated strip is clamped by two butted glass substrates, and an ultraviolet tackifier is coated between the semiconductor elongated strip and the glass substrates; The ultraviolet tackifier is subjected to the first ultraviolet light irradiation to bond and fix the semiconductor elongated strip and the glass substrates; The first roller pressing is performed on the semiconductor elongated strip on the surface of the glass substrate; The first ultraviolet light irradiation is stopped, and the second roller pressing is performed on the semiconductor elongated strip on the surface of the glass substrate; and The ultraviolet tackifier is subjected to the second ultraviolet light irradiation to separate the semiconductor elongated strip and the glass substrates.

2. The method for processing a semiconductor elongated strip according to claim 1, wherein The ultraviolet tackifier includes an acrylic pressure-sensitive adhesive resin, a photocurable resin, a photocurable monomer, a photoinitiator, and a curing agent.

3. The method for processing a semiconductor elongated strip according to claim 1, wherein, The light intensity of the first ultraviolet light irradiation is 1000 - 2500 mJ / cm 2 , and the irradiation time is 300 - 500 seconds.

4. The method for processing a semiconductor elongated strip according to claim 1, characterized in that, The first roller pressing and the second roller pressing use rubber rollers to apply pressure to the surface of the semiconductor elongated strip.

5. The method for processing a semiconductor elongated strip according to claim 4, characterized in that, The time of the first roller pressing is 15 - 20 minutes.

6. The method for processing a semiconductor elongated bar according to claim 4, characterized in that, The time of the second roller pressing is 30 - 60 minutes.

7. The method for processing a semiconductor elongated strip according to claim 1, characterized in that, The light intensity of the second ultraviolet light irradiation is 1000 - 2500 mJ / cm 2 , and the irradiation time is 3 - 5 minutes.

8. The method for processing a semiconductor elongated strip according to claim 1, characterized in that, The coating thickness of the ultraviolet tackifier is 0.5 - 1.5 mm.