Semiconductor device and semiconductor forming method

Abstract

The invention provides a semiconductor device and a semiconductor forming method, the semiconductor device comprises a bearing table, an adsorption device and an adhesive film, the bearing table is used for bearing a first substrate, the adhesive film is located on the bearing surface of the bearing table, and the adsorption device is located on the bearing table; wherein when the first substrate is placed on the bearing table, the first area of the first substrate is adsorbed to the bearing table by the adsorption device, and the second area of the first substrate is fixed to the adhesive film in the adsorption process of the first area. According to the technical scheme, the bending degree of the substrate can be reduced, and then the bonding effect of the substrate is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor integrated circuit manufacturing, and particularly to a semiconductor device and a semiconductor forming method. Background Art

[0002] The bonding process is to bond two substrates, and the curvature of the substrates has a great influence on the bonding effect.

[0003] Taking the temporary bonding process as an example, before bonding, it is necessary to bake the bonding glue on the surface of the substrate, and then position the substrates by the machine to accurately bond the two substrates; however, the curvature of the substrate with a large curvature will further increase after baking, resulting in a change in the relative position between the edge of the substrate and the chuck, and then resulting in the inability to accurately position the substrate, thus leading to the problem of bonding deviation.

[0004] Currently, in order to reduce the curvature of the substrate, a vacuum adsorption device is provided in the chuck for carrying the substrate to reduce the curvature by vacuum adsorption and stretching the substrate; at the same time, for substrates with a large curvature, the bonding pressure on the substrate is also increased. However, when the curvature of the substrate is large, the substrate cannot be flattened by relying on vacuum adsorption; and the bonding pressure values provided by the existing bonding machines also cannot fully meet the bonding requirements of substrates with a large curvature. Therefore, the edge bonding effect of the two bonded substrates is not good (for example, there are bubbles at the bonding interface), and then there is a risk of substrate fragmentation or breakage during the subsequent thinning process of the substrate.

[0005] Therefore, how to reduce the influence of the substrate curvature on bonding is an urgent problem to be solved. Summary of the Invention

[0006] The purpose of the present invention is to provide a semiconductor device and a semiconductor forming method, which can reduce the substrate curvature and thus improve the substrate bonding effect.

[0007] To achieve the above purpose, the present invention provides a semiconductor device, including:

[0008] A carrier table, an adsorption device, and a sticky film, the carrier table is used to carry a first substrate, the sticky film is located on the carrying surface of the carrier table, and the adsorption device is located on the carrier table;

[0009] Wherein, when the first substrate is placed on the carrier table, a first area of the first substrate is adsorbed to the carrier table by the adsorption device, and a second area of the first substrate is fixed to the sticky film during the adsorption process of the first area.

[0010] Optionally, the semiconductor device further includes,

[0011] An adhesion adjusting device for applying an external interference to the adhesive film and changing the adhesion of the adhesive film to the first substrate by changing the external interference.

[0012] Optionally, the adhesive film is a reversible conversion adhesive, and the reversible conversion adhesive includes at least one of phenolic resin glue, high-temperature epoxy glue, and polyimide glue. The adhesion of the adhesive film to the first substrate is changed by changing the temperature; alternatively, the reversible conversion adhesive includes a hydrogel, and the adhesion of the adhesive film to the first substrate is changed by changing the polarity of the hydrogel; alternatively, the reversible conversion adhesive includes azobenzene and its derivatives, and the adhesion of the adhesive film to the first substrate is changed by changing the wavelength of light.

[0013] Optionally, the semiconductor device further includes

[0014] A lifting device located on the carrier table;

[0015] Wherein, when the first substrate is removed from the carrier table, the lifting device moves in a direction close to the first substrate to separate the first substrate from the carrier table.

[0016] Optionally, before or simultaneously with the lifting device moving in a direction close to the first substrate,

[0017] At least one of the adsorption force of the adsorption device on the first substrate and the adhesion of the adhesive film to the first substrate is removed.

[0018] Optionally, the lifting device is an airbag, and the first substrate is separated from the carrier table by applying a pressure difference to the airbag.

[0019] Optionally, the adhesive film includes a plurality of sub-adhesive films, and the lifting device is correspondingly arranged at a preset distance around each sub-adhesive film.

[0020] Optionally, the bearing surface is provided with a first through hole and a second through hole. The adsorption device provides or removes the adsorption force to the first substrate through the first through hole; the lifting device moves in a direction close to or away from the first substrate through the second through hole.

[0021] Optionally, the semiconductor device further includes a baking device for removing the solvent in the bonding glue formed on the side of the first substrate away from the carrier table after the first substrate is fixed to the adhesive film, so that the first substrate becomes the first substrate to be bonded.

[0022] Optionally, after the first substrate to be bonded is bonded to the second substrate by the bonding adhesive after the solvent is removed, the baking device is further configured to cure the bonding adhesive after the solvent is removed so that the first substrate to be bonded becomes the first substrate after bonding.

[0023] Optionally, the first substrate has a first curvature before being placed on the carrier stage, a second curvature after being fixed to the adhesive film, the first substrate to be bonded has a third curvature, and the first substrate after bonding has a fourth curvature. The second curvature, the third curvature, and the fourth curvature are all smaller than the first curvature.

[0024] The present invention also provides a semiconductor forming method, including:

[0025] Providing a first substrate;

[0026] Placing the first substrate on a carrier stage, wherein a first region of the first substrate is adsorbed to the carrier stage by an adsorption device on the carrier stage, and a second region of the first substrate is fixed to an adhesive film on the carrier stage during the adsorption of the first region. The adhesive film is located on the bearing surface of the carrier stage.

[0027] Optionally, the semiconductor forming method further includes

[0028] Bonding the first substrate to a second substrate;

[0029] Removing the first substrate from the carrier stage, wherein a lifting device on the carrier stage moves in a direction close to the first substrate to separate the first substrate from the carrier stage.

[0030] Optionally, the bonding of the first substrate to the second substrate includes:

[0031] Forming a bonding adhesive on a side of the first substrate away from the carrier stage;

[0032] Removing the solvent in the bonding adhesive through a first baking process so that the first substrate becomes the first substrate to be bonded;

[0033] Bonding the first substrate to be bonded to the second substrate through the bonding adhesive after the solvent is removed.

[0034] Optionally, after the first substrate is bonded to the second substrate, it further includes:

[0035] Curing the bonding adhesive after the solvent is removed through a second baking process.

[0036] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0037] 1. The semiconductor device of the present invention includes a carrier stage, a suction device, and a viscous film. The carrier stage is used to carry a first substrate. The viscous film is located on the carrying surface of the carrier stage, and the suction device is located on the carrier stage. When the first substrate is placed on the carrier stage, the first region of the first substrate is adsorbed to the carrier stage by the suction device, and the second region of the first substrate is fixed to the viscous film during the adsorption of the first region. This can reduce the bending degree of the substrate and thus improve the bonding effect of the substrate.

[0038] 2. The semiconductor forming method of the present invention includes: providing a first substrate; placing the first substrate on a carrier stage, where the first region of the first substrate is adsorbed to the carrier stage by a suction device on the carrier stage, and the second region of the first substrate is fixed to a viscous film on the carrier stage during the adsorption of the first region. The viscous film is located on the carrying surface of the carrier stage. This can reduce the bending degree of the substrate and thus improve the bonding effect of the substrate. Description of the Drawings

[0039] Figure 1 is a top view schematic diagram of the semiconductor device according to the first embodiment of the present invention;

[0040] Figure 2 is a top view schematic diagram of the semiconductor device according to the second embodiment of the present invention;

[0041] Figure 3 is a top view schematic diagram of the semiconductor device according to the third embodiment of the present invention;

[0042] Figure 4 is a flowchart of the semiconductor forming method according to an embodiment of the present invention;

[0043] Figures 5a to 5d is Figure 4 a device schematic diagram in the semiconductor forming method shown.

[0044] Among them, the Figures 1 to 5d reference numerals in the attached

[0045] drawings are explained as follows: 111 - first carrier stage; 112 - second carrier stage; 121 - first substrate; 122 - second substrate; 13 - viscous film; 14 - suction device; 151 - airbag; 152 - ejector pin. Detailed Embodiments

[0046] To make the objectives, advantages, and features of the present invention clearer, the semiconductor device and semiconductor forming method proposed by the present invention are further described in detail below. It should be noted that the drawings are all in a very simplified form and use non-precise scales, only for conveniently and clearly assisting in explaining the objectives of the embodiments of the present invention.

[0047] An embodiment of the present invention provides a semiconductor device, which includes: a carrier stage, an adsorption device, and a sticky film. The carrier stage is used to carry a first substrate. The sticky film is located on the carrying surface of the carrier stage, and the adsorption device is located on the carrier stage. When the first substrate is placed on the carrier stage, a first region of the first substrate is adsorbed to the carrier stage by the adsorption device, and a second region of the first substrate is fixed to the sticky film during the adsorption of the first region.

[0048] Refer to Figures 1 to 3 、 Figures 5a to 5d for a detailed description of the semiconductor device provided in this embodiment. Figures 5a to 5d is a longitudinal cross-sectional schematic diagram. Figures 1 to 3 is a top view schematic diagram. Figures 5a to 5d The structures of the carrier stage, the adsorption device, and the sticky film in Figure 1 are longitudinal cross-sectional schematic diagrams of the structures shown along the AA' direction.

[0049] The carrier stage is used to carry the first substrate 121. To distinguish it from the carrier stage for carrying the second substrate 122, the carrier stage for carrying the first substrate 121 is defined as the first carrier stage 111, and the carrier stage for carrying the second substrate 122 is defined as the second carrier stage 112.

[0050] The sticky film 13 is located on the carrying surface of the first carrier stage 111, and the adsorption device 14 is located on the first carrier stage 111.

[0051] The first substrate 121 includes semiconductor materials, including but not limited to silicon and germanium. The first substrate 121 can be a wafer, such as a device wafer or a carrier wafer. The device wafer can be a pixel wafer containing a pixel array of an image sensor, or a MEMS wafer containing a MEMS microstructure of a MEMS device, or can also be a MOSFET wafer or an IGBT wafer or a passive device wafer containing power devices, etc.; the carrier wafer may not contain functional structures, or the carrier wafer may contain functional structures. The first substrate 121 can also be a die, which is formed after performing a separation process on the wafer.

[0052] The adsorption device 14 can adjust the air pressure difference on both sides of the first substrate 121. By making the air pressure on the side of the first substrate 121 away from the first carrier 111 greater than the air pressure on the side of the first substrate 121 close to the first carrier 111, an adsorption force in the direction of the first substrate 121 towards the first carrier 111 is formed, so that the first region of the first substrate 121 is adsorbed to the bearing surface of the first carrier 111 under the action of the adsorption force. The side of the first substrate 121 close to the first carrier 111 includes a first region (not shown) and a second region (not shown). The first region and the second region can be divided as needed, and this application does not limit it. The first region of the first substrate 121 approaches the first carrier 111 under the action of the adsorption force and drives the second region of the first substrate 121 to approach the first carrier 111 until the second region of the first substrate 121 contacts the adhesive film 13 and is fixed to the adhesive film 13 under the adhesion force of the adhesive film 13.

[0053] The adhesion force of the adhesive film 13 is adjustable, and the adhesion force is used to fix the second region of the first substrate 121 to the first carrier 111. The adhesion force of the adhesive film 13 can be adjusted by an adhesion force adjusting device (not shown). The adhesion force adjusting device is used to apply an external interference to the adhesive film 13, and the adhesion force of the adhesive film 13 on the first substrate 121 is changed by changing the external interference. Preferably, the adhesive film 13 is a reversible conversion adhesive.

[0054] In one embodiment, the reversible conversion adhesive may include at least one of phenolic resin glue, high-temperature epoxy glue, and polyimide glue, and the adhesion force of the adhesive film 13 on the first substrate 121 is changed by changing the temperature. For example, by increasing the baking temperature of the adhesive film 13, its viscosity is reduced, and thus the adhesion force on the first substrate 121 is reduced.

[0055] Or, in another embodiment, the reversible conversion adhesive includes hydrogel, and the adhesion force of the adhesive film 13 on the first substrate 121 is changed by changing the polarity of the hydrogel. For example, when a positive current is applied to the adhesive film 13, the adhesive film 13 has viscosity; when a negative current is applied to the adhesive film 13, the adhesive film 13 has no viscosity; the viscosity of the adhesive film 13 can also be adjusted by adjusting the magnitude of the voltage or current applied to the adhesive film 13, so as to adjust the adhesion force on the first substrate 121.

[0056] Or, in another embodiment, the reversible conversion adhesive includes azobenzene and its derivatives, and the adhesion force of the adhesive film 13 on the first substrate 121 is changed by changing the wavelength of light.

[0057] The semiconductor device further includes a jacking device located on the first carrier 111. When the first substrate 121 is removed from the first carrier 111, the jacking device moves in a direction close to the first substrate 121 to separate the first substrate 121 from the first carrier 111. Wherein, before or at the same time when the jacking device moves in a direction close to the first substrate 121, at least one of the adsorption force of the adsorption device 14 on the first substrate 121 and the adhesion force of the adhesive film 13 on the first substrate 121 is removed; or, neither the adsorption force of the adsorption device 14 on the first substrate 121 nor the adhesion force of the adhesive film 13 on the first substrate 121 is removed, but the acting force of the jacking device on the first substrate 121 is not less than the sum of the adsorption force of the adsorption device 14 on the first substrate 121 and the adhesion force of the adhesive film 13 on the first substrate 121.

[0058] In one embodiment, the jacking device is an airbag 151, and the first substrate 121 is separated from the first carrier 111 by applying a pressure difference to the airbag 151.

[0059] The airbag 151 can be a flexible rubber capsule. By inflating gas or liquid into it, the rubber capsule expands to generate a thrust on the first substrate 121, and by extracting the gas or liquid in it, the rubber capsule shrinks to reduce the thrust on the first substrate 121; and, the magnitude of the thrust can be adjusted by adjusting the amount of gas or liquid inflated into the rubber capsule.

[0060] In other embodiments, the jacking device can be a movable rod (not shown) or a thimble 152; the telescopic movement of the movable rod (not shown) or the thimble 152 can be used to generate a thrust or a pulling force on the first substrate 121.

[0061] Alternatively, the jacking device simultaneously includes at least two of the airbag 151, the movable rod (not shown), and the thimble 152.

[0062] In Figures 1 to 2 the illustrated embodiment, the jacking device simultaneously includes the airbag 151 and the thimble 152; in Figure 3 the illustrated embodiment, the jacking device only includes the thimble 152.

[0063] The arrangement of the adsorption device 14, the adhesive film 13, and the jacking device on the bearing surface of the first carrier 111 is set as required. For example, they can be arranged regularly or irregularly. In a cross-section parallel to the bearing surface of the first carrier 111, the cross-sectional shapes of the adsorption device 14, the adhesive film 13, and the jacking device can be the same or different from each other, and their cross-sectional shapes can be any shape, including closed shapes, non-closed shapes, and combinations thereof. For example, their cross-sectional shapes can be zigzag, curved, annular, circular, triangular, quadrilateral, polygonal, etc., and the present application does not limit this.

[0064] The jacking device is arranged at a preset distance around the adhesive film 13. The value of the preset distance can be zero or any other value. In a cross-section parallel to the bearing surface of the first carrier 111, the line shapes of the cross-sectional shapes of the adhesive film 13 and the jacking device adjacent to each other are the same or different.

[0065] In one embodiment, the adhesive film 13 includes only one sub-adhesive film. As Figure 1 shown, the airbag 151 is arranged around the sub-adhesive film. In a cross-section parallel to the bearing surface of the first carrier 111, the cross-sectional shapes of the sub-adhesive film and the airbag 151 are both annular, the line shapes of the cross-sectional shapes of the adhesive film 13 and the airbag 151 adjacent to each other are both circular, and the value of the preset distance is zero. Continuing to refer to Figure 1 , the ejector pin 152 is arranged around the sub-adhesive film. In a cross-section parallel to the bearing surface of the first carrier 111, the cross-sectional shape of the sub-adhesive film is annular, the cross-sectional shape of the ejector pin 152 is circular, the line shapes of the cross-sectional shapes of the adhesive film 13 and the ejector pin 152 adjacent to each other are both circular, and the value of the preset distance is greater than zero.

[0066] In another embodiment, the adhesive film 13 includes multiple sub-adhesive films, and the jacking device is correspondingly arranged at a preset distance around each sub-adhesive film. As Figure 2 shown, the adhesive film 13 includes 11 sub-adhesive films, and an airbag 151 is correspondingly arranged around each sub-adhesive film. In a cross-section parallel to the bearing surface of the first carrier 111, the cross-sectional shape of the sub-adhesive film is annular, the cross-sectional shape of the airbag 151 correspondingly arranged with the sub-adhesive film is circular, the line shapes of the cross-sectional shapes of the sub-adhesive film and the correspondingly arranged airbag 151 adjacent to each other are both circular, and the value of the preset distance is zero. As Figure 3As shown, the adhesive film 13 includes three sub - adhesive films. Around each sub - adhesive film, three thimbles 152 are correspondingly arranged. In a cross - section parallel to the bearing surface of the first carrier 111, the cross - sectional shape of one sub - adhesive film is annular, the cross - sectional shape of the thimble 152 corresponding to the one sub - adhesive film is circular, the line shapes of the cross - sectional shapes of the sub - adhesive film and the corresponding airbag 151 that are adjacent to each other are both circular, and the preset distance value is greater than zero.

[0067] In the embodiment of the present application, only an example is given that in a cross - section parallel to the bearing surface of the first carrier 111, the line shapes of the cross - sectional shapes of the adhesive film 13 and the lifting device that are adjacent to each other are the same. Those skilled in the art know the situation where the line shapes of the cross - sectional shapes of the adhesive film 13 and the lifting device that are adjacent to each other are different in a cross - section parallel to the bearing surface of the first carrier 111.

[0068] The adhesive film 13 includes a plurality of sub - adhesive films. Around each sub - adhesive film, the lifting device is correspondingly arranged at a preset distance interval, so that the adhesive film 13 and the lifting device can be evenly dispersed in multiple areas on the bearing surface. Furthermore, multiple positions of the first substrate 121 can be evenly adhered and fixed by the adhesive film 13, so that the first substrate 121 can be fixed more flatly on the bearing surface, and the lifting device can evenly lift multiple positions of the first substrate 121, so that when the first substrate 121 is lifted, the forces on each position are uniform.

[0069] The bearing surface of the first carrier 111 is provided with a first through - hole (not shown) and a second through - hole (not shown). The adsorption device 14 provides or removes adsorption force to the first substrate 121 through the first through - hole. The lifting device can be arranged in the second through - hole, and the lifting device moves in the second through - hole in a direction close to or away from the first substrate 121; the lifting device can also be arranged on the bearing surface of the first carrier 111, and the lifting device moves in a direction close to or away from the first substrate 121 by providing or removing pressure in the second through - hole.

[0070] The positions of the first through - hole and the second through - hole are the same (that is, the adsorption device 14 and the lifting device share the same through - hole) or different.

[0071] The semiconductor device further includes a baking device (not shown), which is used to remove the solvent in the bonding glue (not shown) formed on the side of the first substrate 121 away from the first carrier 111 after the first substrate 121 is fixed to the adhesive film 13, so that the first substrate 121 becomes the first substrate to be bonded.

[0072] After the first substrate to be bonded is bonded to the second substrate 122 by the bonding adhesive after the solvent is removed, and before the first substrate 121 is removed from the first carrier 111, the baking device is further configured to cure the bonding adhesive after the solvent is removed so that the first substrate to be bonded becomes the first substrate after bonding.

[0073] Before the first substrate 121 is placed on the first carrier 111, it has a first curvature. After the first substrate 121 is fixed to the adhesive film 13, it has a second curvature. The first substrate to be bonded has a third curvature, and the first substrate after bonding has a fourth curvature. The second curvature, the third curvature, and the fourth curvature are all smaller than the first curvature.

[0074] Before the first substrate 121 is placed on the first carrier 111, the first substrate 121 has a first curvature, as Figure 5a shown; when the first substrate 121 is placed on the first carrier 111, the first substrate 121 is flattened under the action of the adsorption force and fixed to the adhesive film 13. The first substrate 121 is reduced from the first curvature to the second curvature, as Figure 5b shown, and the shape of the first substrate 121 is consistent with the shape of the bearing surface of the first carrier 111. Before and after the first substrate 121 is bonded to the second substrate 122, the first substrate 121 has a third curvature and a fourth curvature respectively, as Figure 5c 、 5d shown, and the shape of the first substrate 121 can be made consistent with the shape of the bearing surface of the first carrier 111.

[0075] The differences between the second curvature, the third curvature, and the fourth curvature are within a preset range, and the preset range enables the error after the first substrate 121 is bonded to the second substrate 122 to be within the process tolerance range. In one embodiment, the third curvature and the fourth curvature are equal to the second curvature to prevent the edges of the first substrate to be bonded after the solvent removal treatment and the first substrate after bonding after curing the bonding adhesive after the solvent removal treatment from shrinking too severely, resulting in an alarm on the bonding machine.

[0076] The second substrate 122 includes semiconductor materials, including but not limited to silicon and germanium. The second substrate 122 may be a wafer, such as a device wafer or a carrier wafer. The device wafer may be a pixel wafer including a pixel array of an image sensor, or a MEMS wafer including MEMS microstructures of MEMS devices, or may also be a MOSFET wafer or an IGBT wafer or a passive device wafer including power devices, etc.; the carrier wafer may not include functional structures, or the carrier wafer may include functional structures. The second substrate 122 may also be a die, which is formed after performing a separation process on the wafer.

[0077] The semiconductor device further includes a second carrier 112 for carrying the second substrate 122. The second carrier 112 may include some or all of the features of the first carrier 111, or the second carrier 112 may be different from the first carrier 111.

[0078] Since when the first substrate 121 is placed on the first carrier 111, the first region of the first substrate 121 is adsorbed to the first carrier 111 by the adsorption device 14, and the second region of the first substrate 121 is fixed to the adhesive film 13 during the adsorption of the first region, the bending degree of the first substrate 121 can be reduced. In addition, after the first substrate 121 is fixed to the adhesive film 13, subsequent processes are performed, which can avoid the bending degree of the first substrate 121 from further increasing due to subsequent processes, so that the first substrate 121 can still maintain a flat state, thereby avoiding a change in the relative position between the edge of the first substrate 121 and the first carrier 111, and further enabling accurate positioning of the first substrate 121 and avoiding the problem of bonding offset between the first substrate 121 and the second substrate 122 in the subsequent process; and when bonding the first substrate 121 and the second substrate 122 subsequently, there is no need to increase the bonding pressure, and a smaller bonding pressure can meet the bonding requirements. Therefore, the edge bonding effect between the first substrate 121 and the second substrate 122 is improved.

[0079] In summary, the present invention provides a semiconductor device, including: a carrier, an adsorption device, and an adhesive film. The carrier is used to carry a first substrate, the adhesive film is located on the carrier surface of the carrier, and the adsorption device is located on the carrier; wherein, when the first substrate is placed on the carrier, the first region of the first substrate is adsorbed to the carrier by the adsorption device, and the second region of the first substrate is fixed to the adhesive film during the adsorption of the first region. The semiconductor device of the present invention can reduce the bending degree of the substrate, and thus improve the substrate bonding effect.

[0080] An embodiment of the present invention provides a semiconductor forming method. For features represented by the same name, reference may be made to the above content and will not be elaborated herein. Referring to Figure 4 , from Figure 4 , it can be seen that the semiconductor forming method includes:

[0081] Step S1, providing a first substrate;

[0082] Step S2, placing the first substrate on a carrier stage. A first region of the first substrate is adsorbed to the carrier stage by an adsorption device on the carrier stage, and a second region of the first substrate is fixed to a sticky film on the carrier stage during the adsorption of the first region. The sticky film is located on the bearing surface of the carrier stage.

[0083] As Figure 5a and Figure 5b shown, placing the first substrate 121 on the first carrier stage 111. A first region of the first substrate 121 is adsorbed to the first carrier stage 111 by an adsorption device 14 on the first carrier stage 111, and a second region of the first substrate 121 is fixed to a sticky film 13 on the first carrier stage 111 during the adsorption of the first region. The sticky film 13 is located on the bearing surface of the first carrier stage 111.

[0084] The semiconductor forming method further includes:

[0085] Step S3, bonding the first substrate to a second substrate; Step S4, removing the first substrate from the carrier stage, wherein a jacking device on the carrier stage moves in a direction close to the first substrate to separate the first substrate from the carrier stage.

[0086] As Figure 5c shown, an exemplary illustration of bonding the first substrate 121 to the second substrate 122 includes:

[0087] Forming a bonding adhesive (not shown) on a side of the first substrate 121 away from the first carrier stage 111;

[0088] Removing a solvent in the bonding adhesive through a first baking process to make the first substrate 121 a first substrate to be bonded;

[0089] Bonding the first substrate to be bonded to the second substrate 122 through the bonding adhesive after removing the solvent, wherein a side of the second substrate 122 away from the first substrate 121 is placed on a second carrier stage 112.

[0090] In other embodiments, the first substrate 121 and the second substrate 122 are bonded by hybrid bonding or micro-bump bonding without forming a bonding adhesive; alternatively, before the first substrate 121 is placed on the first carrier 111, a bonding adhesive has been pre-formed on the side of the first substrate 121 away from the first carrier 111.

[0091] As Figure 5d shown, after the first substrate 121 is bonded to the second substrate 122, before, after, or simultaneously with the removal of the first substrate 121 from the first carrier 111, it further includes: curing the bonding adhesive after removing the solvent through a second baking process.

[0092] Removing the first substrate 121 from the first carrier 111 can at least remove one of the adhesion force of the adhesive film 13 to the first substrate 121 and the adsorption force of the adsorption device 14 to the first substrate 121; alternatively, neither the adsorption force of the adsorption device 14 to the first substrate 121 nor the adhesion force of the adhesive film 13 to the first substrate 121 is removed, but the acting force of the jacking device on the first substrate 121 is not less than the sum of the adsorption force of the adsorption device 14 to the first substrate 121 and the adhesion force of the adhesive film 13 to the first substrate 121, and the jacking device on the first carrier 111 moves in a direction close to the first substrate 121 to separate the first substrate 121 from the first carrier 111.

[0093] When removing the first substrate 121 from the first carrier 111, the second substrate 122 is also removed from the second carrier 112.

[0094] Since when the first substrate 121 is placed on the first carrier 111, the first region of the first substrate 121 is adsorbed on the first carrier 111 by the adsorption device 14, and the second region of the first substrate 121 is fixed to the adhesive film 13 during the adsorption of the first region, the curvature of the first substrate 121 can be reduced. In addition, after the first substrate 121 is fixed to the adhesive film 13, subsequent processes are performed, which can prevent the curvature of the first substrate 121 from continuing to increase due to subsequent processes, so that the first substrate 121 can still maintain a flat state, thereby preventing the relative position between the edge of the first substrate 121 and the first carrier 111 from changing, and then accurately positioning the first substrate 121 and avoiding the problem of bonding offset between the first substrate 121 and the second substrate 122 in the subsequent process; moreover, when bonding the first substrate 121 and the second substrate 122 subsequently, there is no need to increase the bonding pressure, and a smaller bonding pressure can meet the bonding requirements. Therefore, the edge bonding effect between the first substrate 121 and the second substrate 122 is improved.

[0095] In summary, the present invention provides a semiconductor forming method, including: providing a first substrate; placing the first substrate on a carrier, the first region of the first substrate being adsorbed on the carrier by an adsorption device on the carrier, and the second region of the first substrate being fixed to an adhesive film on the carrier during the adsorption of the first region, the adhesive film being located on the bearing surface of the carrier. The semiconductor forming method of the present invention can reduce the substrate curvature and thus improve the substrate bonding effect.

[0096] The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention in any way. Any changes and modifications made by those of ordinary skill in the art of the present invention according to the above disclosure are within the scope of protection of the claims.

Claims

1. A semiconductor device, characterized in that, Comprising: A carrier stage, an adsorption device, and a sticky film. The carrier stage is used to carry a first substrate. The sticky film is located on the carrying surface of the carrier stage, and the adsorption device is located on the carrier stage; Wherein, when the first substrate is placed on the carrier stage, a first region of the first substrate is adsorbed to the carrier stage by the adsorption device, and a second region of the first substrate is fixed to the sticky film during the adsorption process of the first region.

2. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes, An adhesion force adjusting device for applying an external interference to the sticky film and changing the adhesion force of the sticky film to the first substrate by changing the external interference.

3. The semiconductor device according to claim 2, wherein, The sticky film is a reversible conversion adhesive. The reversible conversion adhesive includes at least one of phenolic resin glue, high-temperature epoxy glue, and polyimide glue, and the adhesion force of the sticky film to the first substrate is changed by changing the temperature; or, the reversible conversion adhesive includes a hydrogel, and the adhesion force of the sticky film to the first substrate is changed by changing the polarity of the hydrogel; or, the reversible conversion adhesive includes azobenzene and its derivatives, and the adhesion force of the sticky film to the first substrate is changed by changing the wavelength of light.

4. The semiconductor device according to claim 1, wherein, The semiconductor device further includes, A jacking device located on the carrier stage; Wherein, when the first substrate is removed from the carrier stage, the jacking device moves in a direction close to the first substrate to separate the first substrate from the carrier stage.

5. The semiconductor device according to claim 4, wherein Before or simultaneously with the jacking device moving in a direction close to the first substrate, At least one of the adsorption force of the adsorption device to the first substrate and the adhesion force of the sticky film to the first substrate is removed.

6. The semiconductor device according to claim 4, wherein The jacking device is an airbag, and the first substrate is separated from the carrier stage by applying a pressure difference to the airbag.

7. The semiconductor device according to claim 4, wherein The sticky film includes a plurality of sub-sticky films, and the jacking device is correspondingly arranged at a preset distance around each sub-sticky film.

8. The semiconductor device according to claim 4, wherein, The carrying surface is provided with a first through hole and a second through hole. The adsorption device provides or removes the adsorption force to the first substrate through the first through hole; the jacking device moves in a direction close to or away from the first substrate in the second through hole.

9. The semiconductor device according to claim 1, wherein, The semiconductor device further includes a baking device for removing the solvent in the bonding glue formed on the side of the first substrate away from the carrier stage after the first substrate is fixed to the sticky film, so that the first substrate becomes a first substrate to be bonded.

10. The semiconductor device according to claim 9, wherein, After the first substrate to be bonded is bonded to the second substrate through the bonding glue after removing the solvent, the baking device is further used to cure the bonding glue after removing the solvent so that the first substrate to be bonded becomes the bonded first substrate.

11. The semiconductor device according to claim 10, wherein The first substrate has a first curvature before being placed on the carrier stage, a second curvature after being fixed to the sticky film, a third curvature for the first substrate to be bonded, and a fourth curvature for the bonded first substrate. The second curvature, the third curvature, and the fourth curvature are all smaller than the first curvature.

12. A semiconductor forming method, characterized in that, Comprising: Provide a first substrate; Place the first substrate on a carrier stage, with a first region of the first substrate adsorbed to the carrier stage by an adsorption device on the carrier stage, and a second region of the first substrate fixed to a sticky film on the carrier stage during the adsorption of the first region, where the sticky film is located on the bearing surface of the carrier stage.

13. The semiconductor forming method according to claim 12, wherein, The semiconductor forming method further includes, Bond the first substrate to a second substrate; Remove the first substrate from the carrier stage, where a lifting device on the carrier stage moves in a direction close to the first substrate to separate the first substrate from the carrier stage.

14. The semiconductor forming method according to claim 13, wherein The bonding of the first substrate to the second substrate includes: Form a bonding adhesive on a side of the first substrate away from the carrier stage; Remove the solvent in the bonding adhesive through a first baking process to make the first substrate a first substrate to be bonded; Bond the first substrate to be bonded to the second substrate through the bonding adhesive after removing the solvent.

15. The semiconductor forming method according to claim 14, wherein, After the first substrate is bonded to the second substrate, it further includes: Cure the bonding adhesive after removing the solvent through a second baking process.

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