Adsorption device, semiconductor device, and adsorption adjustment method
By configuring the adsorption devices of the first and second adsorption units, the process ring and thinning area of the substrate are respectively adsorbed, and the vacuum abnormality caused by the warping and deformation of the substrate is solved, and more stable adsorption and fixation is achieved, and production efficiency is improved.
Patent Information
- Application Number
- CN202510545792.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-28
- Publication Date
- 2025-07-25
AI Technical Summary
The existing substrate fixing method is difficult to adapt to the thinned substrate warping and deformation, resulting in an abnormal vacuum, alarm shutdown, affecting the machine's production capacity.
Adsorption devices arranged with the first adsorption unit and the second adsorption unit are adopted to adsorb the process ring and the middle thinning area of the substrate respectively, and the position of the adsorption structure is adjusted through relative movement to ensure stable adsorption.
It improves adsorption stability, reduces alarm shutdown caused by vacuum abnormalities, and improves production efficiency.
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Figure CN120376499A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to an adsorption device, a semiconductor device, and an adsorption adjustment method. Background Art
[0002] In semiconductors, the thickness of the substrate is directly related to the performance of the chip. For example, a thinned substrate makes the chip smaller in volume, can adapt to a thinner package design, and reduces the overall thickness and weight in devices such as tablets and watches. Moreover, a thinner substrate helps to vertically stack more layers of thinned chips in a limited space, achieving a higher functional density. In addition, the thinned substrate can achieve good electrical connection and mechanical properties during the chip packaging process, has a shorter thermal diffusion path and a higher surface area to volume ratio, which helps to transfer the heat generated during chip operation faster and more effectively. In some high-frequency radio frequency devices, a thinner substrate helps to reduce the loss and delay of signal transmission because it can reduce the influence of parasitic capacitance and inductance, enabling the signal to be transmitted more quickly and accurately inside the chip, thereby improving the operating frequency and signal processing ability of the device.
[0003] Therefore, during the semiconductor manufacturing process, based on its performance requirements, it is usually necessary to perform a back thinning process on the substrate. For example, the Taiko process is a substrate thinning technology, which is the name of the back grinding of the substrate used in the new generation of packaging new technologies. This technology is different from the previous back grinding. When thinning the substrate, the edge part of the substrate needs to be retained, so that a relatively thick process ring is left at the edge of the substrate. The retention of this process ring can ensure the sufficient structural strength of the substrate and reduce the handling risk of the thin substrate and the problem of warping.
[0004] When the above-mentioned thinned substrate is subjected to subsequent processes, it is usually necessary to fix the substrate. The existing fixing means is usually to adsorb the process ring of the substrate, and this adsorption method is difficult to adapt to the warping deformation of the substrate, easily leads to an alarm shutdown due to abnormal vacuum, and affects the machine production capacity.
[0005] Therefore, how to effectively fix the above-mentioned thinned substrate has become an urgent technical problem in this field. Summary of the Invention
[0006] The purpose of the present invention is to provide an adsorption device, a semiconductor device, and an adsorption adjustment method. The adsorption device is equipped with a first adsorption unit and a second adsorption unit, which respectively adsorb the process ring of the substrate and the central thinned area, helping to improve the adsorption stability.
[0007] The present invention provides an adsorption device, including a first adsorption unit and a second adsorption unit;
[0008] A receiving area is provided on the first adsorption unit. The receiving area is axially communicated with one end of the first adsorption unit, and a first adsorption structure is provided on the first adsorption unit.
[0009] The second adsorption unit is arranged in the receiving area. The first adsorption unit and the second adsorption unit are arranged to move relative to each other along the axial direction. A second adsorption structure is provided on the second adsorption unit. The first adsorption structure and the second adsorption structure are located on the same side of the first adsorption unit and the second adsorption unit along the axial direction.
[0010] Optionally, the first adsorption structure includes a first adsorption groove provided on the first adsorption unit.
[0011] And / or, the second adsorption structure includes a second adsorption groove provided on the second adsorption unit.
[0012] Optionally, the adsorption device further includes a driving unit. The driving unit is connected to the first adsorption unit and / or the second adsorption unit and is used to drive at least one of the first adsorption unit and the second adsorption unit to move axially relative to the other.
[0013] Optionally, the driving unit is further used to adjust the relative angle between the first adsorption unit and the second adsorption unit.
[0014] Optionally, the adsorption device further includes a first vacuum unit and a second vacuum unit. The first vacuum unit is connected to the first adsorption structure to provide a negative pressure environment for the first adsorption structure, and the second vacuum unit is connected to the second adsorption structure to provide a negative pressure environment for the second adsorption structure.
[0015] Optionally, the adsorption device further includes a pressure detection unit.
[0016] The pressure detection unit is used to detect a first pressure value of the negative pressure environment of the first adsorption structure and a second pressure value of the negative pressure environment of the second adsorption structure.
[0017] Optionally, the adsorption device further includes a control unit. The control unit is connected to the detection unit to receive the first pressure value and the second pressure value, and controls the driving unit to act based on the first pressure value and the second pressure value to adjust the relative position of the first adsorption unit and the second adsorption unit along the axial direction.
[0018] The present invention also provides a semiconductor device, which includes the above-mentioned adsorption device.
[0019] The present invention also provides an adsorption adjustment method, which is based on the above-mentioned adsorption device; the adsorption adjustment method includes the following steps:
[0020] Preliminary adjustment: Adjust the relative positions of the first adsorption unit and the second adsorption unit so that the first adsorption structure of the first adsorption unit adsorbs the process ring of the substrate, and the second adsorption structure of the second adsorption unit adsorbs the thinning area of the substrate;
[0021] Vacuum detection: Detect the first pressure value in the negative pressure environment of the first adsorption unit and the second pressure value in the negative pressure environment of the second adsorption unit; if the first pressure value is within the first threshold range and the second pressure value is within the second threshold range, end the adjustment; if the first pressure value is not within the first threshold range or the second pressure value is not within the second threshold range, perform secondary adjustment;
[0022] Secondary adjustment: Adjust the positions of the first adsorption unit and / or the second adsorption unit along the axial direction so that the first pressure value is within the first threshold range and the second pressure value is within the second threshold range.
[0023] Optionally, in the secondary adjustment step, the relative positions of the first adsorption unit and the second adsorption unit along the axial direction change by less than a set distance, and the set distance is less than or equal to 20um.
[0024] Optionally, after the secondary adjustment step, the following steps are further included,
[0025] Detection of pressure change amount: Detect whether the change amount of the first pressure value within the first set time is less than the first change threshold, and whether the change amount of the second pressure value within the second set time is less than the second change threshold;
[0026] If the change amount of the first pressure value within the first set time is less than the first change threshold and the change amount of the second pressure value within the second set time is less than the second change threshold, end the adjustment, otherwise perform the secondary adjustment step.
[0027] Optionally, the secondary adjustment step further includes:
[0028] Adjust the adsorption angles of the first adsorption unit and / or the second adsorption unit so that the first pressure value is within the first threshold range and the second pressure value is within the second threshold range.
[0029] In summary, the adsorption device includes: a first adsorption unit and a second adsorption unit; a receiving area is provided on the first adsorption unit, the receiving area is axially communicated with one end of the first adsorption unit, and a first adsorption structure is provided on the first adsorption unit; the second adsorption unit is disposed in the receiving area, the first adsorption unit and the second adsorption unit are arranged to move relative to each other along the axial direction, and a second adsorption structure is provided on the second adsorption unit; the first adsorption structure and the second adsorption structure are located on the same side of the first adsorption unit and the second adsorption unit along the axial direction.
[0030] With such a configuration, the above adsorption device is configured with a first adsorption unit and a second adsorption unit. The first adsorption unit is used to adsorb the process ring of the substrate, and by adsorbing the thicker area of the substrate to ensure sufficient adsorption force. The second adsorption unit is used to adsorb the thinned area on the back of the substrate, which on the one hand plays a role in supporting the substrate, and on the other hand also plays an auxiliary adsorption effect, further improving the adsorption and fixation effect.
[0031] Through the relative movement setting of the first adsorption unit and the second adsorption unit, the relative position relationship of the first adsorption structure and the second adsorption structure along the axial direction can be adjusted, so that the adsorption device can compensate for the step difference in the processing of the substrate process ring, to ensure that the first adsorption structure and the second adsorption structure are conformally attached to and adsorb the process ring and the thinned area of the substrate respectively, ensuring a good adsorption effect. This adsorption device has the ability to dynamically adapt to process fluctuations. It can adjust the relative position of the first adsorption unit and the second adsorption unit in real time according to the change of the vacuum adsorption force, offset the influence of the vacuum pressure fluctuation, and significantly enhance the process stability. This adsorption device can also adapt to the warpage differences between different processes and between thinned substrates, and improve the alarm shutdown phenomenon caused by abnormal vacuum. The relative position adjustment mechanism of the first adsorption unit and the second adsorption unit can also reduce the downtime and manual operation error, and improve the production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 is a three-dimensional structural schematic diagram of the adsorption device according to an embodiment of the present invention;
[0033] Figure 2 is a top view structural schematic diagram of the adsorption device according to an embodiment of the present invention;
[0034] Figure 3 is a partial cross-sectional structural schematic diagram of the adsorption device according to an embodiment of the present invention;
[0035] Figure 4 is a system block diagram of the adsorption device according to an embodiment of the present invention;
[0036] Figure 5 is a three-dimensional structural schematic diagram of the adsorption device according to another embodiment of the present invention.
[0037] Among them, in the accompanying drawings:
[0038] 100 - Substrate; 110 - Process ring; 120 - Thinning area;
[0039] 10 - First adsorption unit; 101 - Body; 102 - Adsorption ring;
[0040] 11 - Accommodation area; 12 - First adsorption structure; 121 - First adsorption groove; 13 - First vacuum flow channel;
[0041] 20 - Second adsorption unit; 21 - Second adsorption structure; 211 - Second adsorption groove; 22 - Second vacuum flow channel;
[0042] 30 - Driving unit; 31 - Driving member;
[0043] 40 - First vacuum unit; 41 - Torus; 42 - Second connecting member;
[0044] 50 - Second vacuum unit;
[0045] 60 - Pressure detection unit;
[0046] 70 - Control unit;
[0047] a - Axial direction. Specific implementation manner
[0048] The adsorption device proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are all in a very simplified form and use non - precise scales, only for conveniently and clearly assisting in explaining the purpose of the embodiments of the present invention.
[0049] As used in the present invention, the singular forms "a", "an" and "the" include plural referents, the term "or" is generally used in the sense of including "and / or", the term "several" is generally used in the sense of including "at least one", the term "at least two" or "plural" is generally used in the sense of including "two or more". In addition, the terms "first", "second", "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", "third" may explicitly or implicitly include one or at least two of such features. In addition, as used in the present invention, "mounted", "connected", "coupled", an element "disposed" on another element should be understood in a broad sense, generally only indicating that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the two elements may be directly or indirectly connected, coupled, cooperated or transmitted through an intermediate element, rather than being construed as indicating or implying the spatial position relationship between the two elements, that is, an element may be in any orientation such as inside, outside, above, below or on one side of another element, unless otherwise expressly specified. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used relative to the exemplary embodiments as shown in the figures, the upward or upper direction is towards the top of the corresponding figure, and the downward or lower direction is towards the bottom of the corresponding figure.
[0050] In this embodiment, an adsorption device is provided, including: a first adsorption unit 10 and a second adsorption unit 20;
[0051] Combined Figure 1 As shown, in this embodiment, the first adsorption unit 10 has an annular structure, and its interior has a cylindrical accommodation area 11, and the axial direction a is the central axial direction of the first adsorption unit 10. Therefore, the accommodation area 11 penetrates the first adsorption unit 10 and is coaxial with the first adsorption unit 10, and a first adsorption structure 12 is provided at the upper end of the first adsorption unit 10.
[0052] Please continue to refer to Figure 1 and Figure 2 As shown, in this embodiment, the first adsorption structure 12 includes a first adsorption groove 121 provided at the upper end of the first adsorption unit 10.
[0053] The first adsorption unit 10 is integrally in a circular ring structure, which includes an annular body 101 and an adsorption ring 102. The body 101 and the adsorption ring 102 are coaxially arranged, and the adsorption ring 102 is connected to the upper end of the body 101 in the axial direction. The inner diameter of the adsorption ring 102 is approximately equal to the inner diameter of the body 101. One end of the adsorption ring 102 away from the body 101 along its axial direction ( Figure 1 the upper end of the adsorption ring 102 in the figure) is used as the upper end of the first adsorption unit 10, and the first adsorption groove 121 is opened at this end of the adsorption ring 102.
[0054] Combined with Figure 3 As shown, the upper end of the adsorption ring 102 is used as an adsorption surface to adsorb the back surface of the process ring 110 of the substrate 100. By providing a negative pressure environment in the first adsorption groove 121, this end can be adsorbed and attached to the back surface of the process ring 110. The wall thickness of the adsorption ring 102 is greater than the wall thickness of the process ring 110, so that the upper end of the adsorption ring 102 can be completely attached to the back surface of the process ring 102.
[0055] The above-mentioned first adsorption unit 10 is set in a circular ring structure, which can be adapted to the adsorption of the existing circular substrate after back thinning. After the back of the substrate is thinned, a circular process ring is formed in the edge area of the back of the substrate, and a circular thinning area is formed in the middle area. The first adsorption unit 10 can conformally adsorb to the end of the process ring. In other alternative embodiments, the outer shape of the first adsorption unit 10 and the shape of the accommodation area 11 can be adaptively adjusted based on the shape of the substrate to be adsorbed or the shape of the process ring.
[0056] In this embodiment, the outer diameter of the adsorption ring 102 in the first adsorption unit 10 is smaller than the outer diameter of the body 101. It contacts the process ring of the substrate through the process ring 102 with a smaller diameter and a smaller wall thickness, so as to form a better fitting and adsorption effect. In addition, the body 101 with a larger diameter and a larger wall thickness is convenient for connecting with other components and provides a basis for connection. In other alternative embodiments, the outer diameter of the adsorption ring 102 and the outer diameter of the body 101 in the first adsorption unit 10 can be equal, and one end of the first adsorption unit 10 in the axial direction is directly used as the adsorption end to set the first adsorption groove.
[0057] Please continue to refer to Figure 1 and Figure 2 As shown, the first adsorption groove 121 is in a fan-shaped ring structure. There are four first adsorption grooves 121, which are symmetrically distributed around the central axis of the first adsorption unit 10. Combined with Figure 3As shown, a first vacuum flow channel 13 is axially formed in the first adsorption unit 10 along the axis a. The first vacuum flow channel 13 communicates with the first adsorption groove 121. By sucking through the first vacuum flow channel 13, a negative pressure environment is formed in the first adsorption groove 121, thereby realizing the adsorption of the end face of the process ring 102. The four first adsorption grooves 121 can synchronously provide a negative pressure environment through the interconnected first vacuum flow channels 13, so that the vacuum degrees of the four first adsorption grooves 121 are the same, and thus equal adsorption forces are formed. The four first adsorption grooves 121 are symmetrically distributed at the center, and can form a uniform adsorption effect on the circumference of the process ring 102 to meet its adsorption requirements.
[0058] In addition, the above-mentioned first adsorption grooves 121 are arranged in four circumferentially spaced intervals, which can reduce the contact area between the adsorption position and the process ring 102, improve the phenomenon of local vacuum leakage, and help to provide a reliable adsorption force.
[0059] In other alternative embodiments, the number of the first adsorption grooves 121 can be set based on actual adsorption requirements. For example, the first adsorption grooves 121 can be set to two, three, five, six or more. In addition, in other alternative embodiments, the first adsorption groove 121 can be a complete circular ring groove. At this time, the first adsorption groove 121 provides a circumferentially continuous and uninterrupted adsorption force for the process ring 102.
[0060] In this embodiment, the first adsorption groove 121 is arranged in a sector ring structure, which is arranged to adapt to the structure of the circular adsorption ring 102. In other alternative embodiments, the first adsorption groove 121 can be a circular groove, a square groove or other shapes. The shape of the first adsorption groove 121 can be adjusted adaptively based on actual usage requirements.
[0061] Please continue to refer to Figure 1 and Figure 2 As shown, the second adsorption unit 20 is arranged in the accommodation area 11.
[0062] In this embodiment, the second adsorption unit 20 is in a disc shape, which is coaxially arranged with the first adsorption unit 10, and the outer diameter of the second adsorption unit 20 is smaller than the inner diameter of the accommodation area 11, that is, there is a gap between the outer peripheral surface of the second adsorption unit 20 and the inner peripheral surface of the accommodation area 11.
[0063] A second adsorption structure 21 is arranged at the upper end of the second adsorption unit 20 along the axis a; so that the first adsorption structure 12 and the second adsorption structure 21 are located on the same side (at the upper end of the first adsorption unit 10 and the upper end of the second adsorption unit 20). During the adsorption process, the first adsorption structure 12 adsorbs the process ring on the back of the substrate, and the second adsorption structure 21 adsorbs the thinning area on the back of the substrate to form a stable adsorption effect.
[0064] Please continue to refer toFigure 1 and Figure 2 As shown in Figure 2 , the second adsorption structure 21 includes a second adsorption groove 211 provided at the upper end of the second adsorption unit 20.
[0065] Combined with Figure 2 As shown in Figure 2 , the second adsorption groove 211 includes a plurality of annular grooves and a cross groove opened at the upper end of the second adsorption unit 20. Each annular groove is coaxially arranged and is coaxially arranged with the second adsorption unit 20. The intersection of the cross groove passes through the central axis of the second adsorption unit 20, and the cross groove intersects and communicates with each annular groove. The above-mentioned second adsorption groove 211 forms an approximately reticular adsorption groove at the upper end of the second adsorption unit 20 to uniformly adsorb the thinning area of the substrate.
[0066] Combined with Figure 3 As shown in Figure 3 , a second vacuum flow channel 22 is axially provided along the axis a on the second adsorption unit 20. The second vacuum flow channel 22 is connected to the second adsorption groove 211. By pumping through the second vacuum flow channel 22, a negative pressure environment is formed in the second adsorption groove 211, thereby realizing the adsorption of the thinning area 120 on the back of the substrate. The upper end of the second adsorption unit 20 conformally fits to the back of the thinning area 120, and the reticular second adsorption groove 211 provided at its upper end uniformly adsorbs to the back of the thinning area 120 to meet its adsorption requirements.
[0067] The above-mentioned second adsorption groove 211 is set in a structure where the annular groove intersects with the cross groove, which helps to provide a uniform and reliable adsorption force for the thinning area 120. In other alternative embodiments, the reticular distribution shape of the second adsorption groove 211 can be adaptively adjusted based on its adsorption requirements and the shape of the adsorbed thinning area. In addition, the second adsorption groove 211 can also be set as a plurality of fan-shaped annular grooves or other shaped grooves spaced circumferentially. The shape and distribution mode of the second adsorption groove 211 can be adaptively adjusted based on actual adsorption requirements.
[0068] Further, the first adsorption unit 10 and the second adsorption unit 20 are arranged to move relative to each other along the axis a.
[0069] The above-mentioned adsorption device is configured with a first adsorption unit 10 and a second adsorption unit 20. The first adsorption unit 10 is used to adsorb the process ring of the substrate to ensure sufficient adsorption force by adsorbing the thicker area of the substrate. The second adsorption unit 20 is used to adsorb the thinning area on the back of the substrate, which on the one hand plays a role in supporting the substrate, and on the other hand also plays an auxiliary adsorption effect to further improve the adsorption and fixation effect.
[0070] By setting the relative movement of the first adsorption unit 10 and the second adsorption unit 20, the relative positional relationship between the first adsorption structure 12 and the second adsorption structure 21 along the axial direction a can be adjusted, so that the adsorption device can compensate for the step difference in the processing of the substrate process ring, ensuring that the first adsorption structure 12 and the second adsorption structure 21 conform to and adsorb the process ring and the thinning area of the substrate respectively, and ensuring a good adsorption effect. This adsorption device has the ability to dynamically adapt to process fluctuations. It can adjust the relative positions of the first adsorption unit 10 and the second adsorption unit 20 in real time according to the change of the vacuum adsorption force, offset the influence of vacuum pressure fluctuations, and significantly enhance the process stability. This adsorption device can also adapt to the warpage differences between different processes and between thinned substrates, improving the alarm shutdown phenomenon caused by abnormal vacuum. The relative position adjustment mechanism of the first adsorption unit 10 and the second adsorption unit 20 can also reduce the downtime and manual operation errors, and improve the production efficiency.
[0071] Combined Figure 1 As shown, in this embodiment, the first adsorption unit 10 can be driven to move along the axial direction a, the second adsorption unit 20 is relatively stationary, and the bottom of the second adsorption unit 20 can be connected to the machine table through a support member. The first adsorption unit 10 is used as the adjustment object to change the relative position between the first adsorption unit 10 and the second adsorption unit 20 along the axial direction a.
[0072] In other alternative embodiments, the second adsorption unit 20 can be driven to move along the axial direction a, the first adsorption unit 10 can be relatively stationary, or both the first adsorption unit 10 and the second adsorption unit 20 can be driven to move along the axial direction a. The relative position adjustment method of the first adsorption unit 10 and the second adsorption unit 20 along the axial direction a can be set according to the actual use requirements.
[0073] In this embodiment, the accommodation area 11 has an open structure at both ends. The second adsorption unit 20 is located in the accommodation area 11 of the first adsorption unit 10. Therefore, the upper and lower ends of the second adsorption unit 20 respectively correspond to the two open ends of the accommodation area 11, which is convenient for connecting the second adsorption unit 20 to an external driving structure or a fixed structure. In other alternative embodiments, the accommodation area 11 can be set to have an open structure at one end. For example, it only penetrates through the upper end of the first adsorption unit 10, and the lower end of the first adsorption unit 10 is set as a closed structure. At this time, the driving structure can be installed at the bottom of the accommodation area 11 to drive the second adsorption unit 20 to move relative to the first adsorption unit 10 along the axial direction a.
[0074] Please refer to Figure 1 As shown, the adsorption device further includes a driving unit 30. The driving unit 30 is connected to the first adsorption unit 10 and is used to drive the first adsorption unit 10 to move along the axial direction a.
[0075] In this embodiment, the driving unit 30 includes three driving members 31. The driving member 31 is, for example, a linear motor, a hydraulic driving structure or other linear driving structures. The output ends of the three driving members 31 are connected to the lower end of the first adsorption unit 10. The three driving members 31 are symmetrically distributed around the central axis of the first adsorption unit 10, that is, the three driving members 31 are circumferentially spaced 120°. The synchronous operation of the three driving members 31 can drive the first adsorption unit 10 to move linearly along the axis a.
[0076] In addition, in this embodiment, the output end of the driving member 31 is rotationally matched with the first adsorption unit 10. At this time, the three driving members 31 can be individually actuated separately or the driving linear distances of the three driving members 31 can be different, which is used to adjust the angle of the first adsorption unit 10, and further level the upper end of the first adsorption unit 10. This setting method enables the relative level of the first adsorption unit 10 to be adjustable, ensuring the stability of the process. This configuration method can adjust the relative angle between the upper end of the first adsorption unit 10 and the upper end of the second adsorption unit 20. Even if the initial positions of the two end faces cannot ensure relative level, it can be self-adjusted by the driving member 31, which does not affect the running of goods and ensures the stable operation of the machine.
[0077] In this embodiment, the driving unit 30 drives the first adsorption unit 10 to move along the axis a. In other alternative embodiments, the driving unit 30 can be connected to the second adsorption unit 20 for driving the second adsorption unit 20 to move along the axis a alone, or the driving unit 30 can be connected to both the first adsorption unit 10 and the second adsorption unit 20 for driving them to move along the axis a respectively.
[0078] Furthermore, the adsorption device further includes a first vacuum unit 40 and a second vacuum unit 50. The first vacuum unit 40 is connected to the first adsorption structure 12 to provide a negative pressure environment for the first adsorption structure 12, and the second vacuum unit 50 is connected to the second adsorption structure 21 to provide a negative pressure environment for the second adsorption structure 21.
[0079] The first vacuum unit 40 and the second vacuum unit 50 can be, for example, vacuum pumps. As shown in Figure 3 The air inlet of the first vacuum unit 40 is communicated with the first vacuum flow channel 13, and the first vacuum unit 40 provides a negative pressure environment for the first adsorption groove 121 by sucking gas; the air inlet of the second vacuum unit 50 is communicated with the second vacuum flow channel 22, and the second vacuum unit 50 provides a negative pressure environment for the second adsorption groove 211 by sucking gas.
[0080] Furthermore, the adsorption device further includes a pressure detection unit 60 and a control unit 70.
[0081] As shown in Figure 4As shown, the pressure detection unit 60 is connected to the first adsorption structure 12 and the second adsorption structure 21, and is used to detect the first pressure value in the negative pressure environment of the first adsorption structure 12 and the second pressure value in the negative pressure environment of the second adsorption structure 21. The pressure detection unit 60 can adopt a plurality of existing pressure sensors, which can be installed in the first vacuum flow channel 13 and the second vacuum flow channel 22, or installed in the first adsorption groove 121 and the second adsorption groove 211.
[0082] The control unit 70 is connected to the detection unit 50 and the driving unit 30. The control unit 70 is configured to receive the first pressure value and the second pressure value detected by the detection unit 50, and control the driving unit 30 to act based on the first pressure value and the second pressure value, so as to adjust the relative positions of the first adsorption unit 10 and the second adsorption unit 20 along the axial direction a.
[0083] The control unit 70 generally includes at least one processor. The processor can be a central processing unit (CPU), or can also be other general-purpose processors, digital signal processors (DSPs), application specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.
[0084] The at least one processor can communicate with a plurality of peripheral devices via a bus subsystem. These peripheral devices can include a storage system, a user interface input device, a user interface output device, and a network interface.
[0085] The network interface provides an interface to an external network and / or other devices. The network interface includes one or more interfaces known in the art, such as LAN, WLAN, Bluetooth, and other wired and wireless interfaces, etc. The detection unit 50 and the driving unit 30 can be connected to the control unit 70 through the network interface.
[0086] The user interface input device can include a keyboard, a pointing device such as a mouse, a trackball, a touchpad or a graphics tablet, a scanner, a foot pedal, a joystick, a touch screen embedded in a display, an audio input device such as a voice recognition system, a microphone, and other types of input devices. Generally speaking, the term "input device" is intended to include various conventional and proprietary devices and methods for inputting information into the controller.
[0087] The user interface output device may include a display subsystem, a printer, a fax machine, or a non-visual display such as an audio output device. The display subsystem may be a flat panel device such as a liquid crystal display (LCD), a light emitting diode (LED) display, a touch screen display, etc. The display subsystem may also provide a non-visual display such as via an audio output device. Generally speaking, the term "output device" is intended to include various conventional and proprietary devices and means for outputting information from the control unit 70 to the user.
[0088] The storage system may store the basic programming and data structures for implementing the various functions of the present invention. For example, as described herein, the databases and modules that implement the functions of the method of the present invention may be stored in the storage system. These software modules are typically executed by a processor. In a distributed environment, the software modules may be stored on multiple computer systems and executed by the processors of multiple computer systems. The storage system generally includes a memory subsystem and a file storage system. The memory subsystem generally includes multiple memories, including a main random access memory (RAM) for storing instructions and data during program execution and a read-only memory (ROM) for storing fixed instructions therein. The file storage subsystem provides permanent non-volatile storage for program and data files. The file storage system may include a hard disk drive and associated removable media, a compact disc (CD) drive, an optical drive, a DVD, solid state memory, and / or other removable media. One or more of these drives may be located at a remote location on other connected computers at other sites coupled to the control unit 70. The modules that implement the functions of the present invention may be stored by the file storage system.
[0089] The bus subsystem provides components for enabling the various components and subsystems of the control unit 70 to communicate with each other as expected. The various subsystems and components of the control unit 70 do not have to be in the same physical location, but may be distributed at various locations within a distributed network. The bus subsystem may be a single bus or multiple buses may be provided based on requirements.
[0090] The above-described control unit 70 is only intended as an example to merely illustrate one embodiment of the present invention. Due to the ever-changing nature of computers and networks, in other alternative embodiments, the control unit 70 may also have some differences from the configuration of the controller depicted above, which will not be elaborated herein.
[0091] During the actual adsorption process, when the first vacuum unit 40 adsorbs the process ring 110 of the substrate 100, a target adsorption force is preset, and a first threshold range of the vacuum degree of the first adsorption structure 12 is determined based on the target adsorption force. Then, when the first pressure value of the first adsorption structure 12 detected during the adsorption process is within the first threshold range, it is considered that the adsorption force of the first vacuum unit 40 adsorbing the process ring 110 meets the requirements.
[0092] Similarly, when the second vacuum unit 50 adsorbs the thinning area 120 of the substrate 100, a target adsorption force is also set. Based on this target adsorption force, a second threshold range of the vacuum degree of the second adsorption structure 21 is determined. When the second pressure value of the second adsorption structure 21 detected during the adsorption process is within the second threshold range, it is considered that the adsorption force of the second vacuum unit 50 adsorbing the thinning area 120 meets the requirements.
[0093] Therefore, during the adjustment process of the control unit 70, the adjustment is performed based on the relative relationship between the first pressure value and the first threshold range and the relative relationship between the second pressure value and the second threshold range.
[0094] During the adsorption process, first, the first vacuum unit 40 provides a set vacuum degree for the first adsorption structure 12, and this vacuum degree is within the first threshold range. In the ideal adsorption state, the upper end of the first vacuum unit 40 is hermetically attached to the process ring 110, and the first adsorption groove 121 is completely sealed. At this time, the first pressure value corresponding to the first adsorption structure 12 should be within the first threshold range. When the upper end of the first vacuum unit 40 is not properly attached to the process ring 110, at this time, the first adsorption groove 121 is not completely sealed and leaks, resulting in the first pressure value corresponding to the first adsorption structure 12 being outside the first threshold range.
[0095] Similarly, during the adsorption process, first, the second vacuum unit 50 provides a set vacuum degree for the second adsorption structure 21, and this vacuum degree is within the second threshold range. In the ideal adsorption state, the upper end of the second vacuum unit 50 is hermetically attached to the thinning area 120, and the second adsorption groove 211 is completely sealed. At this time, the second pressure value corresponding to the second adsorption structure 21 should be within the second threshold range. When the upper end of the second vacuum unit 50 is not properly attached to the thinning area 120, at this time, the second adsorption groove 211 is not completely sealed and leaks, resulting in the second pressure value corresponding to the second adsorption structure 21 being outside the second threshold range.
[0096] It should be noted that if the detected value is between the two end values of the threshold range or equal to the two end values, it can be considered to be within the threshold range.
[0097] When the first pressure value detected by the pressure detection unit 60 is outside the first threshold range, or the second pressure value is outside the second threshold range, it is considered that there is a deviation in the relative positions of the first vacuum unit 40 and the second vacuum unit 50. At this time, it is necessary to adjust their positions. The control unit 70 sends a signal to the driving unit 30 to drive the first adsorption unit 10 to move along the axial direction a, and by adjusting the relative positions of the first adsorption unit 10 and the second vacuum unit 50, so that the first vacuum unit 40 is conformally and hermetically attached to the process ring 110, and the second vacuum unit 50 is conformally and hermetically attached to the thinning area 120.
[0098] Combined Figure 5 As shown, another embodiment of the adsorption device is provided. In this embodiment, the driving unit 30 includes four driving members 31. The output ends of the four driving members 31 are connected to the lower end of the first adsorption unit 10. The four driving members 31 are circumferentially distributed at 90°. The synchronous movement of the four driving members 31 can drive the first adsorption unit 10 to perform a linear motion along the axial direction a. In other alternative embodiments, the number and distribution mode of the driving members 31 included in the driving unit 30 can be set based on actual adjustment requirements.
[0099] This embodiment also provides a semiconductor device, and the semiconductor device includes the above-mentioned adsorption device. The semiconductor device is a related device for performing processes after substrate thinning, such as a debonding device, a process ring cutting device, a related device for the taiko ring process, and other devices that need to fix the thinned substrate.
[0100] This embodiment also provides an adsorption adjustment method, including steps such as preliminary adjustment, vacuum detection, and secondary adjustment.
[0101] Preliminary adjustment: Adjust the relative positions of the first adsorption unit 10 and the second adsorption unit 20 so that the upper end of the first adsorption unit 10 along the axial direction a adsorbs the process ring of the substrate, and the upper end of the second adsorption unit 20 along the axial direction a adsorbs the thinned area of the substrate.
[0102] In this step, during the adsorption process, first, the first vacuum unit 40 provides a set vacuum degree for the first adsorption structure 12, and this vacuum degree is within the first threshold range. The second vacuum unit 50 provides a set vacuum degree for the second adsorption structure 21, and this vacuum degree is within the second threshold range.
[0103] During preliminary adjustment, the relative positions of the first adsorption unit 10 and the second adsorption unit 20 are adjusted based on the actual structure of the substrate. Specifically, the height difference (distance along the axial direction a) between the upper end of the first adsorption unit 10 and the upper end of the second adsorption unit 20 should be equal to the set height difference between the process ring and the thinned area in the substrate, so that in an ideal state, the upper end of the first adsorption unit 10 adsorbs and fits with the process ring, and the upper end of the second adsorption unit 20 adsorbs and fits with the thinned area. Usually, after preliminary adjustment, the first adsorption unit 10 and the second adsorption unit 20 can reach an ideal adsorption state. In special cases, for example, due to manufacturing errors, the actual height difference between the process ring and the thinned area deviates greatly from the set height difference, or the substrate warpage is too large, the first adsorption unit 10 and the second adsorption unit 20 fail to reach an ideal adsorption state. At this time, the relative positions of the first adsorption unit 10 and the second adsorption unit 20 need to be adjusted, so further detection is required through the next step.
[0104] Vacuum detection: Detect the first pressure value in the negative pressure environment of the first adsorption unit 10 and the second pressure value in the negative pressure environment of the second adsorption unit 20. Specifically, the pressure detection unit 60 detects the first pressure value in the negative pressure environment of the first adsorption structure 12 and the second pressure value in the negative pressure environment of the second adsorption structure 21, and transmits the detected data to the control unit 70. The control unit 70 is used to judge the relative relationship between the first pressure value and the first threshold range and the relative relationship between the second pressure value and the second threshold range. If the first pressure value is within the first threshold range and the second pressure value is within the second threshold range, the adjustment is ended; if the first pressure value is not within the first threshold range or the second pressure value is not within the second threshold range, secondary adjustment is performed;
[0105] Secondary adjustment: The control unit 70 sends a signal to the drive unit 30, and the drive unit 30 acts to adjust the relative position of the first adsorption unit 10 or the second adsorption unit 20 along the axis a so that the first pressure value is within the first threshold range and the second pressure value is within the second threshold range.
[0106] Furthermore, during the preliminary adjustment process, the positions of the first adsorption unit 10 and the second adsorption unit 20 are adapted based on the actual shape of the substrate; therefore, only fine adjustment of the first adsorption unit 10 and the second adsorption unit 20 is required during the secondary adjustment. In the secondary adjustment step, the relative position change of the first adsorption unit 10 and the second adsorption unit 20 along the axis a is less than the set distance, and the set distance is less than or equal to 20 μm.
[0107] In this embodiment, the second adsorption unit 20 is relatively stationary. During the secondary adjustment of the first adsorption unit 10, the moving distance along the axis a is less than the set distance of 20 μm. Further preferably, the set distance is less than 10 μm.
[0108] Furthermore, after the secondary adjustment step, the following steps are further included,
[0109] Pressure change amount detection: Detect whether the change amount of the first pressure value within the first set time is less than the first change threshold, and whether the change amount of the second pressure value within the second set time is less than the second change threshold;
[0110] If the change amount of the first pressure value within the first set time is less than the first change threshold and the change amount of the second pressure value within the second set time is less than the second change threshold, the adjustment is ended; otherwise, the secondary adjustment step is performed.
[0111] The above detection is used to detect the fluctuation values of the first pressure value and the second pressure value. When the fluctuation values are large, it is considered that the adsorption is unstable.
[0112] For example, both the first change threshold and the second change threshold are set to 5 kPa. When the change amount of the first pressure value is less than 5 kPa within the first set time and the change amount of the second pressure value is less than 5 kPa within the second set time, it is considered that the adsorption is stable, and the adsorption requirement is met at this time. When the change amount of the first pressure value is not less than 5 kPa within the first set time and the change amount of the second pressure value is not less than 5 kPa within the second set time, it is considered that the adsorption is unstable and there is a possibility of leakage. At this time, the adsorption requirement is not met and secondary adjustment needs to be carried out again.
[0113] In this embodiment, the first set time and the second set time can be adjusted according to actual requirements. For example, the first set time and the second set time are set in seconds or in minutes.
[0114] In addition, in other alternative embodiments, multiple groups of change values can also be detected at equal time intervals. For example, at specific intervals, the change amount of the first pressure value within the first set time is detected, and at specific intervals, the change amount of the second pressure value within the second set time is detected. When multiple consecutive groups of change amount data are all less than the corresponding thresholds, it is determined that the adsorption requirement is met.
[0115] The above detection method feeds back data according to two groups of vacuum pressures, and controls the driving unit 30 to act, realizing the closed-loop adjustment of the adsorption device, ensuring the uniformity of the process loop of the substrate and the contact stress in the thinning area, and reducing the risk of edge breakage.
[0116] The above detection method adopts two groups of adsorption structures to implement dual vacuum detection. It can more accurately detect the vacuum pressures of the inner and outer rings of the substrate, and automatically adjust the height of the detection device according to the changes of the inner and outer ring vacuum pressures, improving the adsorption effect and adjustment efficiency.
[0117] In the above embodiment, the relative positions of the first adsorption unit 10 and the second adsorption unit 20 along the axial direction a are adjusted by the driving unit 30. In other alternative embodiments, when the driving unit 30 includes multiple driving parts, the control unit 70 can also be used to adjust the individual actions or coordinated actions of each driving part to adjust the relative angles of the upper end of the first adsorption unit 10 and / or the second adsorption end of the second adsorption unit 20, and further adjust the adsorption angles of the first adsorption unit 10 and / or the second adsorption unit 20, so that the first pressure value is within the first threshold range and the second pressure value is within the second threshold range, to more flexibly realize the adsorption adjustment.
[0118] In this specification, the various embodiments are described in a progressive manner. The key point of each embodiment is the difference from other embodiments. The same or similar parts among the embodiments can be referred to each other.
[0119] The above description is only a description of the preferred embodiments of the present invention and does not limit the scope of the present invention in any way. Any changes or modifications made by those of ordinary skill in the art of the present invention based on the above disclosure shall fall within the scope of protection of the claims.
Claims
1. An adsorption device, characterized in that, Comprising: A first adsorption unit and a second adsorption unit; A receiving area is provided on the first adsorption unit, the receiving area is axially communicated with one end of the first adsorption unit, and a first adsorption structure is provided on the first adsorption unit; The second adsorption unit is arranged in the receiving area, the first adsorption unit and the second adsorption unit are arranged to move relative to each other along the axial direction, and a second adsorption structure is provided on the second adsorption unit; the first adsorption structure and the second adsorption structure are located on the same side of the first adsorption unit and the second adsorption unit along the axial direction.
2. The adsorption device according to claim 1, wherein The first adsorption structure includes a first adsorption groove provided on the first adsorption unit; And / or, the second adsorption structure includes a second adsorption groove provided on the second adsorption unit.
3. The adsorption device according to claim 1, wherein The adsorption device further includes a driving unit, the driving unit is connected to the first adsorption unit and / or the second adsorption unit, and is used to drive at least one of the first adsorption unit and the second adsorption unit to move axially relative to the other.
4. The adsorption device according to claim 3, characterized in that, The driving unit is further used to adjust the relative angle between the first adsorption unit and the second adsorption unit.
5. The adsorption device according to claim 1, characterized in that, The adsorption device further includes a first vacuum unit and a second vacuum unit, the first vacuum unit is connected to the first adsorption structure to provide a negative pressure environment for the first adsorption structure, and the second vacuum unit is connected to the second adsorption structure to provide a negative pressure environment for the second adsorption structure.
6. The adsorption device according to any one of claims 1 to 5, characterized in that, The adsorption device further includes a pressure detection unit; The pressure detection unit is used to detect a first pressure value of the negative pressure environment of the first adsorption structure and a second pressure value of the negative pressure environment of the second adsorption structure.
7. The adsorption device according to claim 6, wherein The adsorption device further includes a control unit, the control unit is connected to the detection unit to receive the first pressure value and the second pressure value, and controls the driving unit to act based on the first pressure value and the second pressure value to adjust the relative position of the first adsorption unit and the second adsorption unit along the axial direction.
8. A semiconductor device, characterized in that, The semiconductor device includes the adsorption device according to any one of claims 1 to 7.
9. An adsorption adjustment method for the adsorption device according to any one of claims 1 to 7, characterized in that, Including the following steps: Preliminary adjustment: Adjust the relative position of the first adsorption unit and the second adsorption unit so that the first adsorption structure of the first adsorption unit adsorbs the process ring of the substrate and the second adsorption structure of the second adsorption unit adsorbs the thinning area of the substrate; Vacuum detection: Detect the first pressure value of the negative pressure environment of the first adsorption unit and the second pressure value of the negative pressure environment of the second adsorption unit; if the first pressure value is within the first threshold range and the second pressure value is within the second threshold range, end the adjustment; if the first pressure value is not within the first threshold range or the second pressure value is not within the second threshold range, perform secondary adjustment; Secondary adjustment: Adjust the position of the first adsorption unit and / or the second adsorption unit along the axial direction so that the first pressure value is within the first threshold range and the second pressure value is within the second threshold range.
10. The adsorption adjustment method according to claim 9, characterized in that, During the secondary adjustment step, the relative position change of the first adsorption unit and the second adsorption unit along the axial direction is less than a set distance, and the set distance is less than or equal to 20 μm.
11. The adsorption adjustment method according to claim 9, characterized in that, After the secondary adjustment step, the following steps are further included: Pressure change detection: Detect whether the change amount of the first pressure value within the first set time is less than the first change threshold, and whether the change amount of the second pressure value within the second set time is less than the second change threshold; If the change amount of the first pressure value within the first set time is less than the first change threshold, and the change amount of the second pressure value within the second set time is less than the second change threshold, the adjustment is ended; otherwise, the secondary adjustment step is executed.
12. The adsorption adjustment method according to claim 9, wherein The secondary adjustment step further includes: Adjusting the adsorption angles of the first adsorption unit and / or the second adsorption unit so that the first pressure value is within the first threshold range and the second pressure value is within the second threshold range.