Semiconductor device

Abstract

The semiconductor device includes: a substrate having a plurality of conductive layers provided on an upper end surface thereof; a semiconductor element disposed on the upper end surface of the substrate, a first terminal located on the lower end surface side of the semiconductor element being electrically connected to a first conductive layer provided on the upper end surface of the substrate; a packaging part for packaging the substrate and the semiconductor element; a first lead frame, one end portion of which is in contact with the upper end surface of the first conductive layer at an end portion extending in a side direction of the upper end surface of the substrate in the package portion, and the other end portion of which is exposed from the package portion; and a first conductive bonding material that bonds an upper end surface of the first conductive layer and a lower end surface side of one end portion of the first lead frame at an end portion of the substrate and has conductivity, in which the one end portion of the first lead frame has: a first arch portion provided so as to protrude upward along a reference direction; and a first bent part which is connected to the first arched part, is positioned closer to the front end side than the first arched part, and is bent so as to protrude downward in the reference direction.

Description

Technical Field

[0001] The present invention relates to a semiconductor device. Background Art

[0002] Conventionally, for example, a semiconductor device (see, for example, Patent Document 1) has been widely known, in which a semiconductor element is placed on a conductor layer of a substrate, and the semiconductor element and a lead frame are joined by a connection member via a conductive bonding material such as solder, and the semiconductor element and the substrate are encapsulated with a molding resin.

[0003] In such a conventional semiconductor device, when thermal stress is applied to the semiconductor device, stress is generated at the joint of the lead frame, resulting in a problem of reduced reliability of the electrical connection at the joint.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2015-12065

[0007] In view of the above problems, an object of the present invention is to provide a semiconductor device that can relieve stress generated at the joint between the lead frame and the substrate when stress is applied to the lead frame, thereby suppressing a problem of reduced reliability of the electrical connection at the joint. Summary of the Invention

[0008] A semiconductor device according to an embodiment of one aspect of the present invention is characterized by including:

[0009] A substrate having a plurality of conductive layers provided on an upper end surface thereof;

[0010] A semiconductor element disposed on the upper end surface of the substrate, and a first terminal on a lower end surface side thereof being electrically connected to a first conductive layer provided on the upper end surface of the substrate;

[0011] A packaging portion that packages the substrate and the semiconductor element;

[0012] A first lead frame having one end portion contacting an upper end surface of the first conductive layer at an end portion extending in a side direction of the upper end surface of the substrate within the packaging portion, and the other end portion protruding from the packaging portion; and

[0013] A first conductive bonding material that bonds between the upper end surface of the first conductive layer and a lower end surface side of the one end portion of the first lead frame at the end portion of the substrate and has conductivity,

[0014] One end portion of the first lead frame has: a first arched portion configured to protrude upward along a reference direction; and a first bent portion connected to the first arched portion and located closer to the front end side than the first arched portion, and bent to protrude downward along the reference direction.

[0015] In the semiconductor device,

[0016] The lower end face side of the first bent portion is in line contact with the upper end face of the first conductive layer along the reference direction.

[0017] In the semiconductor device,

[0018] The first conductive bonding material is disposed along the reference direction in which the first bent portion of the first lead frame is in line contact with the upper end face of the first conductive layer, and bonds the upper end face of the first conductive layer and the lower end face side of the first bent portion at the end portion of the substrate.

[0019] In the semiconductor device,

[0020] On both sides of the portion of the first bent portion of the first lead frame that is in line contact with the first conductive layer in the reference direction, notch portions recessed in the reference direction are formed.

[0021] A part of the first conductive bonding material is filled into the notch portions, and bonds the upper end face of the first conductive layer and the notch portions of the first bent portion.

[0022] In the semiconductor device,

[0023] The first lead frame is configured such that:

[0024] The edge direction in which the end portion of the substrate extends and the reference direction in which the area of the line contact of the first bent portion extends are parallel to each other.

[0025] In the semiconductor device,

[0026] The first lead frame has a main body portion located between the one end portion and the other end portion and encapsulated in the encapsulation portion, and the position of the upper end face of the first arched portion is higher than the position of the upper end face of the main body portion.

[0027] In the semiconductor device,

[0028] The width of the first arched portion in the edge direction is the same as the width of the edge direction except for the notch portions of the first bent portion.

[0029] In the semiconductor device,

[0030] One end portion and the other end portion of the first lead frame have the same thickness.

[0031] In the semiconductor device,

[0032] The first conductive bonding material is a solder material.

[0033] In the semiconductor device,

[0034] The first arched portion disperses the stress applied to the first lead frame to the surrounding encapsulation portion, thereby suppressing the stress from being applied to the first bent portion of the first lead frame.

[0035] In the semiconductor device,

[0036] The position of the lower end surface of the first bent portion is lower than the position of the lower end surface of the main body portion.

[0037] In the semiconductor device, it further includes:

[0038] A second lead frame, one end portion of which is in contact with the upper end surface of a second conductive layer provided on the upper end surface of the end portion of the substrate within the encapsulation portion, and the other end portion of which protrudes from the encapsulation portion;

[0039] A second conductive bonding material, which bonds between the first conductive layer and the one end portion of the second lead frame at the end portion of the substrate and has conductivity; and

[0040] A connection member X, which electrically connects the second conductive layer and a second terminal on the upper end surface side of the semiconductor element,

[0041] Wherein, the one end portion of the second lead frame has:

[0042] A second arched portion, which is provided to protrude upward along the reference direction; and

[0043] A second bent portion, which is connected to the second arched portion and is located closer to the front end side than the second arched portion, and is bent to protrude downward along the reference direction,

[0044] The lower side of the second bent portion is in line contact with the upper end surface of the second conductive layer along the reference direction.

[0045] In the semiconductor device,

[0046] The semiconductor element is a MOSFET,

[0047] In the semiconductor element, the first terminal is a drain terminal, the second terminal is a gate terminal, and a source terminal as a third terminal having an area larger than that of the second terminal is provided on its upper end surface.

[0048] In the semiconductor device,

[0049] The width of the one end portion of the first lead frame in the reference direction is larger than the width of the one end portion of the second lead frame in the reference direction.

[0050] In the semiconductor device, it further includes:

[0051] A third lead frame, one end portion of which is electrically connected to the third terminal in the encapsulation portion, and the other end portion of which protrudes from the encapsulation portion.

[0052] Advantageous Effects of the Invention

[0053] A semiconductor device according to an aspect of the present invention includes: a substrate on which a plurality of conductive layers are provided on its upper end surface; a semiconductor element disposed on the upper end surface of the substrate, and a first terminal on its lower end surface side being electrically connected to a first conductive layer provided on the upper end surface of the substrate; an encapsulation portion encapsulating the substrate and the semiconductor element; a first lead frame, one end portion of which contacts the upper end surface of the first conductive layer at an end portion extending in a side direction of the upper end surface of the substrate in the encapsulation portion, and the other end portion of which protrudes from the encapsulation portion; and a first conductive bonding material that bonds between the upper end surface of the first conductive layer and the lower end surface side of one end portion of the first lead frame at an end portion of the substrate and has conductivity.

[0054] Moreover, one end portion of the first lead frame has: a first arched portion provided to protrude upward along a reference direction; and a first bent portion connected to the first arched portion and located closer to the front end side than the first arched portion, and being bent to protrude downward along the reference direction, and the lower end surface side of the first bent portion is in line contact with the upper end surface of the first conductive layer in the reference direction.

[0055] For example, on both sides of the portion of the first bent portion of the first lead frame L1 that is in line contact with the first conductive layer in the reference direction A2, notch portions recessed in the reference direction are formed, and a part of the first conductive bonding material is filled in the notch portions, and the upper end surface of the first conductive layer and the notch portions of the first bent portion are bonded.

[0056] As described above, in the semiconductor device of the present invention, for example, in the case where thermal stress is applied, the stress applied to the first lead frame L1 can be dispersed to the surrounding encapsulation portion by the first arched portion provided on the first lead frame.

[0057] Moreover, since the first bent portion at the front end of the first lead frame is in line contact with the substrate, the thickness of the conductive bonding material (solder material) around the contact portion can be ensured.

[0058] Next, for example, notch portions are formed on both sides of the first bent portion to facilitate the bending of the first bent portion. At the same time, by flowing solder into the notch portions, fixation by the conductive bonding material can be ensured.

[0059] As described above, in the semiconductor device of the present invention, when stress is applied to the lead frame, the stress generated at the joint between the lead frame and the substrate can be alleviated. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] Figure 1 is a perspective view showing an example of the configuration of the semiconductor device 100 before packaging.

[0061] Figure 2 is a top view showing an example of the configuration of the semiconductor device 100 after packaging and before cutting the lead frame.

[0062] Figure 3 is a perspective view showing an example of the configuration of the semiconductor device 100 after packaging and before cutting the lead frame.

[0063] Figure 4 is a perspective view showing an example of the configuration of the semiconductor device 100 after cutting the lead frame.

[0064] Figure 5A is Figure 1 a magnified perspective view of the area near the first and second lead frames L1, L2 and the connecting member X of the semiconductor device 100 shown in

[0065] Figure 5B is Figure 5A a further magnified perspective view of the area near the connecting member X shown in

[0066] Figure 5C is showing Figure 5B a side view showing an example of the side of the area near the connecting member X shown in

[0067] Figure 6 is Figure 1 a magnified perspective view of the area near the first lead frame L1 and the detection lead frame L11 of the semiconductor device 100 shown in

[0068] Figure 7 is showing Figure 6 a perspective view showing an example of the configuration of the first lead frame L1 and the first conductive bonding material H1 shown in

[0069] Figure 8A is a top view showing an example of the structure of the first lead frame L1 and the first conductive bonding material H1 shown in Figure 7 .

[0070] Figure 8B is a cross-sectional view showing an example of the structure of the first lead frame L1 shown in Figure 8A .

[0071] Figure 9 is a cross-sectional view showing an example of the structure near one end L1M of the first lead frame L1 shown in Figure 6 .

[0072] Figure 10 is an illustrative view showing an example of the process of the manufacturing method of the semiconductor device 100.

[0073] Figure 11 is an illustrative view showing an example of the process of the manufacturing method of the semiconductor device 100 after Figure 10 .

[0074] Figure 12 is an illustrative view showing an example of the process of the manufacturing method of the semiconductor device 100 after Figure 11 .

[0075] Figure 13 is an illustrative view showing an example of the process of the manufacturing method of the semiconductor device 100 after Figure 12 . DETAILED DESCRIPTION

[0076] Hereinafter, embodiments of the present invention will be described based on the drawings.

[0077] Figure 1 is an oblique view showing an example of the structure of the semiconductor device 100 before encapsulation. Figure 2 is a top view showing an example of the structure of the semiconductor device 100 after encapsulation and before lead frame cutting. Figure 3 is an oblique view showing an example of the structure of the semiconductor device 100 after encapsulation and before lead frame cutting. Figure 4 is an oblique view showing an example of the structure of the semiconductor device 100 after lead frame cutting. In the Figure 1 legend, two first lead frames L1 are shown. In addition, Figure 2 the legend of

[0078] Figure 5A is an enlarged oblique view of the area near the first and second lead frames L1, L2 and the connecting member X of the semiconductor device 100 shown in Figure 1 . Figure 5B is an enlarged view ofFigure 5A An enlarged perspective view of the area near the connector X shown in Figure 5C is a view showing Figure 5B An example side view of the side of the area near the connector X shown in

[0079] For example Figures 1 to 4 As shown, the semiconductor device 100 includes: a substrate B; a semiconductor element S; a package portion 200; a first lead frame (drain lead frame) L1; a detection lead frame L11; a first conductive bonding material H1; a drain conductive bonding material HD; a second lead frame (control lead frame) L2; a second conductive bonding material (first control conductive bonding material) H2; a second control conductive bonding material HG; a third control conductive bonding material HX; a connector X; a third lead frame (source lead frame) L3; a source conductive bonding material HS; and a detection lead frame L31.

[0080] As Figure 1 , Figure 2 shown, the substrate B is provided with a plurality of conductive layers (a first conductive layer D1 and a second conductive layer D2) on its upper end surface.

[0081] As Figure 1 , Figure 2 shown, the semiconductor element S is disposed on the upper end surface of the substrate B. The first terminal TD on the lower end surface side of the semiconductor element S is electrically connected to the first conductive layer D1 provided on the upper end surface of the substrate B.

[0082] The semiconductor element S, for example Figure 1 , Figure 2 shown, has: a first terminal (drain terminal) TD; a second terminal (gate terminal) TG; and a third terminal (source terminal) TS.

[0083] And, the first terminal TD is provided on the lower end surface of the semiconductor element S and is electrically connected to the first conductive layer D1.

[0084] In addition, the second terminal TG is provided on the upper end surface of the semiconductor element S and a control signal (gate signal) is input thereto.

[0085] The semiconductor element S is, for example, a MOSFET. At this time, the first terminal TD as the drain terminal is provided on the lower end surface of the semiconductor element S which is a MOSFET, the second terminal TG as the gate terminal is provided on its upper end surface, and the third terminal TS as the source terminal is also provided on its upper end surface.

[0086] The semiconductor element S may also be other semiconductor elements such as IGBI other than MOSFET.

[0087] In addition, as Figure 1 , Figure 2 shown, one end portion L1M of the first lead frame L1 is electrically connected to the first terminal TD which is the drain terminal within the encapsulation portion 200, and the other end portion L1N thereof protrudes from the encapsulation portion 200.

[0088] Specifically, one end portion L1M of the first lead frame L1 contacts the upper end surface of the first conductive layer D1 at an end portion extending in the side direction A1 of the upper end surface of the substrate B within the encapsulation portion 200, and the other end portion L1N thereof protrudes from the encapsulation portion 200.

[0089] One end portion L1M of the first lead frame L1 includes: a first arched portion L1b; and a first bent portion L1a.

[0090] Moreover, the first arched portion L1b is provided to protrude upward along the reference direction A2.

[0091] The first bent portion L1a is connected to the first arched portion L1b and is located closer to the front end side than the first arched portion L1b, and is bent to protrude downward along the reference direction A2.

[0092] The lower end surface side of the first bent portion L1a is in line contact with the upper end surface of the first conductive layer D1 along the reference direction A2.

[0093] In addition, the first conductive bonding material H1 bonds between the upper end surface of the first conductive layer D1 and the lower end surface side of one end portion L1M of the first lead frame L1 at the end portion of the substrate B and has conductivity.

[0094] The first conductive bonding material H1 is, for example, a solder material.

[0095] One end portion of the detection lead frame L11 is electrically connected to the first terminal TD which is the drain terminal within the encapsulation portion 200, and the other end portion thereof protrudes from the encapsulation portion 200.

[0096] The detection lead frame L11 is used to detect the voltage of the drain of, for example, the semiconductor element S.

[0097] Moreover, the detection conductive bonding material H11 bonds between the first conductive layer D1 and one end portion of the detection lead frame L11 and has conductivity.

[0098] The detection conductive bonding material H11 is, for example, a solder material.

[0099] The second lead frame L2, for example Figure 1 , Figure 2 shown, one end portion L2M thereof contacts the upper end surface of the second conductive layer provided at the end portion of the upper end surface of the substrate B within the encapsulation portion 200, and the other end portion L2N thereof protrudes from the encapsulation portion 200.

[0100] The second lead frame L2 is a control lead frame for transmitting the gate signal of the aforementioned MOSFET (semiconductor element S).

[0101] The second conductive bonding material (first control conductive bonding material) H2 bonds between the first conductive layer D1 and one end portion L2M of the second lead frame L2 at the end portion of the substrate B and has conductivity.

[0102] The second conductive bonding material H2 is, for example, a solder material.

[0103] In addition, one end portion L2M of the second lead frame L2 includes: a second arched portion L2b; and a second bent portion L2a.

[0104] And, the second arched portion L2b is provided to protrude upward along the reference direction A2.

[0105] The second bent portion L2a is connected to the second arched portion L2b and is located closer to the front end side than the second arched portion L2b, and is bent to protrude downward along the reference direction A2.

[0106] The lower side of the second bent portion L2a is in line contact with the upper end surface of the second conductive layer D2 along the reference direction A2.

[0107] The width of one end portion L1M of the first lead frame L1 in the reference direction A2 is set to be larger than the width of one end portion L2M of the second lead frame L2 in the reference direction A2.

[0108] One end portion L3M of the third lead frame L3 is electrically connected to the third terminal TS which is the source terminal on the upper end surface of the semiconductor element S, and the other end portion L3N is exposed from the package portion 200.

[0109] And, the source conductive bonding material HS bonds between the third terminal TS and one end portion L3M of the third lead frame L3 and has conductivity.

[0110] The source conductive bonding material HS is, for example, a solder material.

[0111] One end portion of the detection lead frame L31 is electrically connected to the third terminal TS which is the source terminal on the upper end surface of the semiconductor element S (that is, extends from the third lead frame L3), and the other end portion is exposed from the package portion 200.

[0112] The detection lead frame L31 is for detecting, for example, the voltage of the source of the semiconductor element S.

[0113] In addition, as Figures 1 to 4 shown, the package portion 200 packages the substrate B and the semiconductor element S.

[0114] Example 1

[0115] In the Figure 5A 、 Figure 5B 、 Figure 5C upper end surface of the semiconductor element S in the illustrated legend, the area of the source terminal as the third terminal TS is set to be larger than the area of the second terminal TG as the gate terminal.

[0116] And, the connecting member X is, for example Figure 5A 、 Figure 5B 、 Figure 5C as shown, which electrically connects between the second conductive layer D2 and the second terminal (gate terminal) TG on the upper end surface side of the semiconductor element S.

[0117] The connecting member X is, for example Figure 5A 、 Figure 5B 、 Figure 5C as shown, one end portion X1 thereof contacts the upper end surface of the second terminal TG of the semiconductor element S within the package portion 200, and the other end portion X2 thereof contacts the second conductive layer D.

[0118] In Example 1, the second control conductive bonding material HG bonds between the upper end surface of the second terminal TG of the semiconductor element S and one end portion X1 of the connecting member X and has conductivity.

[0119] The second control conductive bonding material HG is, for example, a solder material.

[0120] And, the third control conductive bonding material HX bonds between the second conductive layer D2 of the substrate B and the other end portion X2 of the connecting member X and has conductivity.

[0121] The third control conductive bonding material HX is, for example, a solder material.

[0122] That is, the connecting member X electrically connects between the second conductive layer D2 and the second terminal (gate terminal) TG on the upper end surface side of the semiconductor element S through the second and third control conductive bonding materials HG and HX.

[0123] One end portion X1 of the connecting member X is, for example Figure 5B 、 Figure 5C as shown, and includes: a horizontal portion Xc; a first inclined portion Xb; a control bending portion Xa; and a reference portion Xd.

[0124] The horizontal portion Xc is, for example Figure 5A 、 Figure 5B 、 Figure 5C as shown, and is configured to be parallel to the upper end surface of the substrate B.

[0125] In addition, the first inclined portion Xb is, for exampleFigure 5A , Figure 5B , Figure 5C As shown, it is connected to the horizontal part Xc and is located on the front end side closer to one end X1 than the horizontal part Xc, and also has a shape inclined downward from the horizontal part Xc.

[0126] The control bending part Xa, for example Figure 5B As shown, it is connected to the first inclined part Xb and is located at the front end of one end X1, and is bent to protrude downward along the bending axis direction A3.

[0127] The lower end face side of the control bending part Xa contacts the upper end face of the second terminal TG. In particular, the lower end face side of the control bending part Xa contacts the center TGa of the upper end face of the second terminal TG.

[0128] Next, the lower end face side of the control bending part Xa, for example Figure 5C As shown, it is in line contact with the upper end face of the second terminal TG in the bending axis direction A3.

[0129] In addition, the width of the control bending part Xa in the bending axis direction A3 is the same as the width of the first inclined part Xb in the bending axis direction A3.

[0130] The reference part Xd is connected to the horizontal part Xc on the side opposite to the first inclined part Xb and has a width larger than the width of the horizontal part Xc.

[0131] The width of the control bending part Xa in the bending axis direction A3 is set to be smaller than the width of the reference part Xd in the bending axis direction A3.

[0132] In the first embodiment, the second control conductive bonding material HG, for example Figure 5A , Figure 5B , Figure 5C As shown, it is arranged along the bending axis direction A3 where the control bending part Xa of the connecting member X is in line contact with the upper end face of the second terminal TG, and joins between the upper end face of the second terminal TG and the lower end face side of the control bending part Xa.

[0133] And, the upper end face of the second terminal TG, for example Figure 5A , Figure 5B , Figure 5C As shown, it has a rectangular shape.

[0134] As Figure 5B shown, the second control conductive bonding material HG is located at a position surrounding the center TGa of the upper end face of the second terminal TG, so as to join between the lower end face of the control bending part Xa of the connecting member X and the upper end face of the second terminal TG.

[0135] For exampleFigure 5C As shown, the lower end face side of the bending portion Xa for controlling the connecting member X is in line contact with the upper end face of the second terminal TG in the bending axis direction A3 passing through the center TGa of the upper end face of the second terminal TG.

[0136] The bending axis direction A3 is, for example, Figure 5A , Figure 5B , Figure 5C as shown, and is parallel to one side of the rectangle of the second terminal TG.

[0137] On the other hand, the other end portion X2 of the connecting member X includes: a second inclined portion Xe; and a front end portion Xf.

[0138] Moreover, the second inclined portion Xe is connected to the reference portion Xd on the side opposite to the horizontal portion Xc and is located closer to the front end side of the other end portion X2 than the reference portion Xd, and also has a shape inclined downward from the reference portion Xd.

[0139] The front end portion Xf is, for example, Figure 5A , Figure 5B , Figure 5C as shown, and is connected to the second inclined portion Xe and is located at the front end of the other end portion X2.

[0140] The front end portion Xf is joined to the upper end face of the second conductive layer D2 of the substrate B by a third conductive joining material HX for control.

[0141] The height of the lower end face of the bending portion Xa for controlling the connecting member X from the upper end face of the substrate B is set to be higher than the height of the lower end face of the front end portion Xf from the upper end face of the substrate B.

[0142] The thickness of the connecting member X in the vertical direction is set to be thinner than the thickness of the second lead frame L2 in the vertical direction.

[0143] Therefore, it is possible to facilitate the bending process of the miniaturized connecting member X.

[0144] Embodiment 2

[0145] In Embodiment 2, Figure 6 is an enlarged perspective view of the area near the first lead frame L1 and the detection lead frame L11 of the semiconductor device 100 shown in Figure 1 . Figure 7 is an example perspective view showing the configuration of the first lead frame L1 and the first conductive joining material H1 shown in Figure 6 . Figure 8A is an example top view showing the configuration of the first lead frame L1 and the first conductive joining material H1 shown in Figure 7 . Figure 8B is an example showing Figure 8AA cross-sectional view showing an example of the structure of the first lead frame L1 shown in the figure. Figure 9 is a view showing Figure 6 A cross-sectional view showing an example of the structure near one end L1M of the first lead frame L1 shown in the figure.

[0146] For example Figures 6 to 9 As shown, one end L1M of the first lead frame L1 includes: a first arched portion L1b; and a first bent portion L1a.

[0147] Moreover, the first arched portion L1b is provided to protrude upward along the reference direction A2.

[0148] The first bent portion L1a is connected to the first arched portion L1b and is located closer to the front end side than the first arched portion L1b, and is bent to protrude downward along the reference direction A2.

[0149] The lower end face side of the first bent portion L1a of the first lead frame L1 is in line contact with the upper end face of the first conductive layer D1 along the reference direction A2.

[0150] The first conductive bonding material H1 is arranged along the reference direction A2 in which the first bent portion L1a of the first lead frame L1 is in line contact with the upper end face of the first conductive layer D1. The first conductive bonding material H1 joins the upper end face of the first conductive layer D1 and the lower end face side of the first bent portion L1a at the end of the substrate B.

[0151] In the second embodiment, as Figures 6 to 9 shown, on both sides of the portion of the first bent portion L1a of the first lead frame L1 that is in line contact with the first conductive layer D1 along the reference direction A2, notch portions L1k that are recessed in the reference direction A2 are formed.

[0152] A part of the first conductive bonding material H1 is filled into the notch portions L1k, and joins the upper end face of the first conductive layer D1 and the notch portions L1k of the first bent portion L1a.

[0153] In addition, the first lead frame L1, for example Figures 6 to 9 is arranged such that the side direction A1 in which the end of the substrate B extends and the reference direction A2 in which the region of the line contact of the first bent portion L1a extends are parallel to each other.

[0154] The first lead frame L1 has a main body portion that is located between one end L1M and the other end L1N and is encapsulated in the encapsulation portion 200, and the position of the upper end face of the first arched portion L1b is higher than the position of the upper end face of the main body portion.

[0155] The width of the side direction A1 of the first arched portion L1b is the same as the width of the side direction A1 except for the notch portion L1k of the first bent portion L1a. That is, the width of the side direction A1 of the first arched portion L1b is greater than the width of the side direction A1 of the notch portion L1k of the first bent portion L1a.

[0156] For example, one end portion L1M and the other end portion L1N of the first lead frame L1 have the same thickness (i.e., the first lead frame L1 is not embossed).

[0157] The position of the lower end surface of the first bent portion L1a is set to be lower than the position of the lower end surface of the main body portion.

[0158] Moreover, the first arched portion L1b disperses the stress applied to the first lead frame L1 to the surrounding package portion 200, thereby suppressing the stress from being applied to the first bent portion L1a of the first lead frame L1.

[0159] Embodiment 3

[0160] In Embodiment 3, an example of a manufacturing method of the semiconductor device 100 having the above-described configuration will be described.

[0161] In Embodiment 3, Figures 10 to 13 is an exemplary diagram showing the steps of a manufacturing method of the semiconductor device 100.

[0162] First, as Figure 10 shown, a metal plate 300 made of, for example, a metal such as copper is prepared.

[0163] And, as Figure 11 shown, the portions that will become the first to third lead frames L1 to L3 are simultaneously formed by selectively stamping the metal plate 300.

[0164] In particular, when forming the first lead frame L1, notch portions L1k that are recessed in the reference direction A2 are formed on the side surfaces on both sides of the reference direction A2 of the portion in the first bent portion L1a of the first lead frame L1 that is in line contact with the first conductive layer D1.

[0165] Similarly, when forming the second lead frame L2, notch portions L2k that are recessed in the reference direction A2 are formed on the side surfaces on both sides of the reference direction A2 of the portion in the second bent portion L2a of the second lead frame L2 that is in line contact with the first conductive layer D1.

[0166] And, as Figure 12 shown, the first and second bent portions L1a and L2a are formed by bending one end portions of the first and second lead frames L1 and L2 so as to protrude downward along the reference direction A2.

[0167] AsFigure 13 As shown, a specified shape L3X is formed after performing specified processing on the third lead frame L3.

[0168] Through the above processes, for example, Figure 1 the first to third lead frames L1 to L3 as shown are formed.

[0169] On the other hand, a substrate B having a first conductive layer D1 and a second conductive layer D2 provided on its upper end surface is prepared.

[0170] A semiconductor element S is disposed on the upper end surface of the substrate B. The semiconductor element S has: a first terminal TD provided on its lower end surface and electrically connected to the first conductive layer D1; and a second terminal TG provided on its upper end surface to which a control signal is input. Then, the first terminal TD is bonded to the first conductive layer D1, thereby electrically connecting the first conductive layer D1 and the first terminal TD.

[0171] Subsequently, as Figures 5A to 5C shown, one end portion of the first lead frame L1 is brought into contact with the upper end surface of the first conductive layer D1 provided at the end portion on the upper end surface of the substrate B. And while bonding the upper end surface of the first conductive layer to the lower end surface side of the first bent portion of the first lead frame L1 at the end portion of the substrate B by the first conductive bonding material H1, a part of the first conductive bonding material H1 is filled into the notch portion L1k, and the upper end surface of the first conductive layer D1 and the notch portion L1k of the first bent portion L1a are bonded.

[0172] Similarly, one end portion of the second lead frame L2 is brought into contact with the upper end surface of the second conductive layer D2 provided at the end portion on the upper end surface of the substrate B. And the second conductive layer D2 and one end portion of the second lead frame L2 are bonded at the end portion of the substrate B by the first control conductive bonding material H2 having conductivity ( Figure 1 ). At this time, a part of the second conductive bonding material H2 is filled into the notch portion L2k, and the upper end surface of the second conductive layer D2 and the notch portion L2k of the second bent portion L2a are bonded.

[0173] Next, one end portion of the third lead frame L3 is brought into contact with the upper end surface of the third terminal TS on the upper end surface of the semiconductor element S. And the third terminal TS and one end portion of the third lead frame L3 are bonded by the source conductive bonding material HS having conductivity ( Figure 1 ).

[0174] While bringing one end portion X1 of the connecting member X into contact with the upper end surface of the second terminal TG of the semiconductor element S, the other end portion X2 of the connecting member X is brought into contact with the second conductive layer D2. Further, while joining the upper end surface of the second terminal of the semiconductor element S and one end portion X1 of the connecting member X with a second conductive joining material HG for control having conductivity, the second conductive layer D2 of the substrate B and the other end portion X2 of the connecting member X are joined with a third conductive joining material HX for control having conductivity.

[0175] As Figure 2 , Figure 3 shown, the substrate B, the semiconductor element S, the connecting member X, the first to third lead frames L1 to L3, and one end portions of the detection lead frames L11, L31 are encapsulated by the encapsulation portion 200.

[0176] Subsequently, the semiconductor device 100 as Figure 4 shown is manufactured by cutting the first to third lead frames L1 to L3 and the detection lead frames L11, L31.

[0177] As described above, in the present embodiment, after forming the outer shape of the stamped metal plate 300, the first and second bent portions L1a, L2a can be formed by the two processes of bending one end portions of the first and second lead frames L1, L2. Therefore, the processing cost can be reduced, and since the solder thickness is ensured at the outer peripheral portion of the joint portion, the stress can also be alleviated.

[0178] In addition, notch portions (recessed portions) L1k, L2k are formed on both sides of the first and second bent portions L1a, L2a at the front ends (one end portions) of the first and second lead frames L1, L2, so that the bending of the first and second bent portions L1a, L2a becomes easy. At the same time, by flowing solder into the notch portions L1k, L2k, the fixing by solder can be ensured.

[0179] As described above, since the front ends of the first and second lead frames L1, L2 are bent by bending processing, and the bent first and second bent portions L1a, L2a are connected to the first and second conductive layers D1, D2 in a line contact manner, the amount of solder material dispensed can be reduced.

[0180] As described above, a semiconductor device according to one aspect of the present invention includes: a substrate B having a plurality of conductive layers D1 and D2 provided on an upper end surface thereof; a semiconductor element S disposed on the upper end surface of the substrate, and a first terminal on a lower end surface side thereof being electrically connected to a first conductive layer D1 provided on the upper end surface of the substrate; a package portion that packages the substrate and the semiconductor element; a first lead frame L1 having one end portion contacting an upper end surface of the first conductive layer at an end portion extending in a side direction A1 of the upper end surface of the substrate within the package portion, and the other end portion protruding from the package portion; and a first conductive bonding material H1 that bonds between the upper end surface of the first conductive layer and a lower end surface side of one end portion of the first lead frame at an end portion of the substrate and has conductivity.

[0181] Moreover, one end portion of the first lead frame has: a first arched portion L1b provided to protrude upward along a reference direction A2; and a first bent portion L1a connected to the first arched portion and located closer to a front end side than the first arched portion, and being bent to protrude downward along the reference direction, wherein a lower end surface side of the first bent portion is in line contact with the upper end surface of the first conductive layer in the reference direction.

[0182] For example, on side surfaces of a portion of the first bent portion L1a of the first lead frame L1 that is in line contact with the first conductive layer D1 and located on both sides in the reference direction A2, notch portions L1k recessed in the reference direction are formed, and a part of the first conductive bonding material H1 is filled into the notch portions to bond between the upper end surface of the first conductive layer D1 and the notch portions of the first bent portion L1a.

[0183] As described above, in the semiconductor device of the present invention, for example, in the case where thermal stress is applied, the stress applied to the first lead frame L1 can be dispersed to a surrounding package portion by the first arched portion L1b provided on the first lead frame L1.

[0184] Moreover, since the first bent portion L1a at the front end of the first lead frame is in line contact with the substrate B, the thickness of a conductive bonding material (solder material) around the contact portion can be ensured.

[0185] Next, for example, notch portions L1k are formed on both sides of the first bent portion L1a, so that bending of the first bent portion L1a becomes easy, and by flowing solder into the notch portions L1k, fixation by the conductive bonding material can be ensured.

[0186] Therefore, in the semiconductor device of the present invention, when stress is applied to the lead frame, stress generated at a joint portion between the lead frame and the substrate can be alleviated.

[0187] Although several embodiments of the present invention have been described, these embodiments are presented only as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included within the scope and gist of the invention and are also included within the scope of the invention described in the claims and equivalents thereof.

[0188] Symbol Explanation

[0189] 100 Semiconductor device

[0190] B Substrate

[0191] S Semiconductor element

[0192] 200 Package part

[0193] L1 First lead frame

[0194] L11 Detection lead frame

[0195] H1 First conductive bonding material

[0196] L2 Second lead frame

[0197] H2 Second conductive bonding material (first control conductive bonding material)

[0198] HG Second control conductive bonding material

[0199] HX Third control conductive bonding material

[0200] X Connector

[0201] L3 Third lead frame

[0202] L31 Detection lead frame

Claims

1. A semiconductor device, characterized in that, Comprising: A substrate, on the upper end surface of which a plurality of conductive layers are provided; A semiconductor element, which is disposed on the upper end surface of the substrate, and a first terminal on the lower end surface side thereof is electrically connected to a first conductive layer provided on the upper end surface of the substrate; A package portion that packages the substrate and the semiconductor element; A first lead frame, one end portion of which contacts the upper end surface of the first conductive layer at an end portion extending in the side direction of the upper end surface of the substrate within the package portion, and the other end portion of which protrudes from the package portion; And A first conductive bonding material that bonds between the upper end surface of the first conductive layer and the lower end surface side of the one end portion of the first lead frame at the end portion of the substrate and has conductivity, wherein the one end portion of the first lead frame has: a first arched portion that is provided to protrude upward along a reference direction; and a first bent portion that is connected to the first arched portion and is located closer to the front end side than the first arched portion and is bent to protrude downward along the reference direction, On the side surfaces on both sides in the reference direction of the portion in the first bent portion of the first lead frame that is in line contact with the first conductive layer, notch portions that are recessed in the reference direction are formed, The first conductive bonding material bonds between the upper end surface of the first conductive layer and the lower end surface side of the first bent portion at the end portion of the substrate, the lower end surface side of the first bent portion is in line contact with the upper end surface of the first conductive layer along the reference direction, and the first conductive bonding material is arranged along the reference direction in which the first bent portion of the first lead frame is in line contact with the upper end surface of the first conductive layer, A part of the first conductive bonding material is filled into the notch portions formed on the side surfaces on both sides in the reference direction of the portion in the first bent portion of the first lead frame that is in line contact with the first conductive layer, and bonds between the upper end surface of the first conductive layer and the notch portions of the first bent portion, The first lead frame is configured to: Make the side direction in which the end portion of the substrate extends and the reference direction in which the area of the line contact of the first bent portion extends be parallel to each other, The first lead frame has a main body portion, which is located between the one end portion and the other end portion and is encapsulated in the package portion, and the position of the upper end surface of the first arched portion is higher than the position of the upper end surface of the main body portion.

2. The semiconductor device according to claim 1, wherein: Among them, The width in the side direction of the first arched portion is the same as the width in the side direction except for the notch portions of the first bent portion.

3. The semiconductor device according to claim 2, wherein: Among them, The one end portion and the other end portion of the first lead frame have the same thickness.

4. The semiconductor device according to claim 1, wherein: Among them, The first conductive bonding material is a solder material.

5. The semiconductor device according to claim 1, wherein: Among them, The first arched portion disperses the stress applied to the first lead frame to the surrounding encapsulation portion, thereby suppressing the stress from being applied to the first bent portion of the first lead frame.

6. The semiconductor device according to claim 4, wherein: Among them, The position of the lower end surface of the first bent portion is lower than the position of the lower end surface of the main body portion.

7. The semiconductor device according to claim 1, wherein Further comprising: A second lead frame, one end of which is in contact with the upper end surface of the second conductive layer provided on the upper end surface of the end portion of the substrate within the encapsulation portion, and the other end of which protrudes from the encapsulation portion; A second conductive bonding material that bonds between the first conductive layer and the one end of the second lead frame at the end portion of the substrate and has conductivity; and A connection member that electrically connects the second conductive layer and the second terminal on the upper end surface side of the semiconductor element, wherein the one end of the second lead frame has: A second arched portion that is provided to protrude upward along the reference direction; and A second bent portion that is connected to the second arched portion and is located closer to the front end side than the second arched portion, and is bent to protrude downward along the reference direction, The lower side of the second bent portion is in line contact with the upper end surface of the second conductive layer along the reference direction.

8. The semiconductor device according to claim 7, wherein: Among them, The semiconductor element is a MOSFET. In the semiconductor element, the first terminal is a drain terminal, the second terminal is a gate terminal, and a source terminal as a third terminal having a larger area than the second terminal is provided on its upper end surface.

9. The semiconductor device according to claim 8, wherein: Among them, The width of the one end of the first lead frame in the reference direction is larger than the width of the one end of the second lead frame in the reference direction.

10. The semiconductor device according to claim 9, characterized in that, Further comprising: A third lead frame, one end of which is electrically connected to the third terminal within the encapsulation portion, and the other end of which protrudes from the encapsulation portion.

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