Broadband energy selective surface with steep drop characteristic
By designing a broadband energy selection surface, adopting a specific substrate and metal patch structure, and using the inductive capacitor switching of the PIN diode, the problem of insufficient protection of high-power electromagnetic waves is solved, low-loss wave transmission and high shielding efficiency are achieved, production costs are reduced, and processing processes are simplified.
Patent Information
- Application Number
- CN202510583192.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-07
- Publication Date
- 2025-07-25
AI Technical Summary
The existing energy-selected surfaces have insufficient protection capabilities when facing high-power electromagnetic waves, and are highly produced and complex in processing processes, making it difficult to achieve rapid physical processing and testing.
A broadband energy selection surface with steep drop characteristics is designed, using the upper substrate, the middle substrate and the lower substrate structure, the metal patch and the PIN diode are alternately arranged, and the PIN diode is switched to inductors and capacitors under high and low power electromagnetic waves, combining FR-4 dielectric and metal copper materials to simplify the processing technology.
It realizes effective shielding when high-power electromagnetic waves and wave transmission when low-power electromagnetic waves, has good steep drop characteristics and low loss, reduces production costs, simplifies processing processes, and improves structural reliability and integration.
Smart Images
Figure CN120376948A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of microwave and radio frequency technologies, and particularly to a broadband energy selective surface with a steep drop characteristic. Background Art
[0002] An Energy Selective Surface (ESS) can automatically adjust its transmission characteristics for electromagnetic waves according to the energy level of the electromagnetic waves. When the energy of the electromagnetic wave is less than the safety threshold, it can pass through smoothly, and when it is greater than the safety threshold, it is automatically shielded. By using ESS technology, electromagnetic wave energy can be protected more effectively, thus protecting the functions of electromagnetic materials when facing high-power microwave radiation. This technology not only has great scientific value but also broad application prospects.
[0003] Communication and radar systems play a crucial role in modern applications, but they are particularly sensitive to high-power electromagnetic (EM) waves and are vulnerable to interference or damage. High-power microwave (HPM) sources can quickly interfere with, degrade, or even destroy electronic devices by radiating a large amount of electromagnetic energy in the microwave spectrum, resulting in system failures or communication interruptions, especially in military and critical infrastructure, which may cause serious consequences. In recent years, with the rapid development of electromagnetic protection technologies, the energy selective surface (ESS), as an effective solution, has gradually received more and more attention. Therefore, we propose a broadband energy selective surface with a steep drop characteristic. Summary of the Invention
[0004] In order to make up for the deficiencies of the prior art and solve at least one of the technical problems proposed in the background art.
[0005] The present invention adopts the following technical solutions to solve the above technical problems: A broadband energy selective surface with a steep drop characteristic is provided, including an upper substrate, a middle substrate, and a lower substrate from top to bottom. It is characterized in that above the upper substrate, there is an alternately connected first metal patch and PIN diode and an alternately connected second metal patch and PIN diode. The sizes of the first metal patch and the second metal patch are different. Above the middle substrate, there are alternately connected zigzag metal patches and PIN diodes. Above the lower substrate, there are alternately connected third metal patches and PIN diodes.
[0006] Preferably, the first metal patch, the second metal patch, and the third metal patch are all arrow-shaped designs.
[0007] Preferably, the first metal patch is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.1 mm and a triangular metal patch with a bottom side of 0.5 mm and a height of 0.15 mm. The second metal patch is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.2 mm and a triangular metal patch with a bottom side of 0.8 mm and a height of 0.15 mm, and the gap width is 0.8 mm.
[0008] Preferably, the serrated metal patch is composed of a plurality of rectangular metal patches with a width of 0.1 mm, and the gap width is 0.7 mm.
[0009] Preferably, the third metal patch is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.1 mm and a triangular metal patch with a bottom side of 0.5 mm and a height of 0.15 mm.
[0010] Preferably, the upper substrate, the middle substrate and the lower substrate are all made of FR-4, a dielectric with a relative dielectric constant of 4.3 and a loss tangent of 0.025. The first metal patch, the second metal patch and the third metal patch are all made of metal copper with good conductivity and stable properties.
[0011] Preferably, the model of the PIN diode is SMP1345-079LF. When the PIN diode is off, it is equivalent to a capacitor of 0.15 pF. When it is on, it is equivalent to a resistor of 1.5 Ω and an inductor of 0.7 nH.
[0012] Preferably, the upper substrate, the middle substrate and the lower substrate are all designed to be 5 mm in length and 4 mm in width.
[0013] Compared with the prior art, the present invention provides a broadband energy selective surface with a steep drop characteristic, having the following beneficial effects: 1. For the broadband energy selective surface with a steep drop characteristic, the insertion loss IL and shielding effectiveness SE indexes of the energy selective surface are good. When high-power electromagnetic waves are incident on the structure, the PIN diode is turned on and is equivalent to a series connection of an inductor and a resistor. In the range of 0-9.1 GHz, the shielding effectiveness reaches more than 10 dB. When low-power electromagnetic waves are incident on the structure, the PIN diode is turned off and is equivalent to a capacitor, and wave transmission is achieved in the range of 0-7.1 GHz, and the transmission coefficient is above -3 dB. At the same time, the rectangularity coefficient of the energy selective surface structure is about 0.94. Therefore, the energy selective surface not only has a protection function and wideband wave transmission, but also has a good steep drop characteristic.
[0014] 2. The broadband energy selection surface with a steep descent characteristic uses common FR-4 as the substrate medium and copper as the metal patch unit material. Combining with the printing process, it not only ensures the reliability of the structure in terms of performance, but also greatly reduces the production cost, simplifies the processing flow, and facilitates the rapid realization of the processing and testing of physical objects. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 is a schematic diagram of the overall structure of the present invention; Figure 2 is a schematic diagram of the upper-layer structure of the present invention; Figure 3 is a schematic diagram of the middle-layer structure of the present invention; Figure 4 is a schematic diagram of the lower-layer structure of the present invention; Figure 5 is a schematic diagram of the shielding effectiveness SE under the incidence of high-power electromagnetic waves of the present invention; Figure 6 is a schematic diagram of the insertion loss IL under the incidence of low-power electromagnetic waves of the present invention.
[0016] In the figure: 1. upper substrate; 2. middle substrate; 3. lower substrate; 4. PIN diode; 11. first metal patch; 13. second metal patch; 21. zigzag metal patch; 31. third metal patch. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0017] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0018] Please refer to Figure 1-6 , a broadband energy selection surface with a steep descent characteristic, including an upper substrate 1, a middle substrate 2, and a lower substrate 3 from top to bottom. It is characterized in that there is an alternately connected first metal patch 11 and PIN diode 4 and an alternately connected second metal patch 13 and PIN diode 4 above the upper substrate 1. The sizes of the first metal patch 11 and the second metal patch 13 are different. There is an alternately connected zigzag metal patch 21 and PIN diode 4 above the middle substrate 2, and an alternately connected third metal patch 31 and PIN diode 4 above the lower substrate 3.
[0019] In this embodiment, the first metal patch 11, the second metal patch 13, and the third metal patch 31 are all arrow-shaped designs. The first metal patch 11 is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.1 mm and a triangular metal patch with a base of 0.5 mm and a height of 0.15 mm. The second metal patch 13 is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.2 mm and a triangular metal patch with a base of 0.8 mm and a height of 0.15 mm, and the gap width is 0.8 mm. The serrated metal patch 21 is composed of multiple rectangular metal patches with a width of 0.1 mm, and the gap width is 0.7 mm. The third metal patch 31 is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.1 mm and a triangular metal patch with a base of 0.5 mm and a height of 0.15 mm. The model of the PIN diode 4 is SMP1345-079LF. When the PIN diode 4 is off, it is equivalent to a capacitor of 0.15 pF, and when it is on, it is equivalent to a resistor of 1.5 Ω and an inductor of 0.7 nH.
[0020] Specifically, when high-power electromagnetic waves are incident, the PIN diode 4 conducts and is equivalent to a resistor, providing a wide shielding band. When low-power electromagnetic waves are incident, the PIN diode is turned off and is equivalent to a capacitor, which will provide a transmission band in the range of 0 - 7.1 GHz and has good out-of-band cutoff characteristics. More specifically, combined with Figure 5 and Figure 6 As shown, when high-power electromagnetic waves are incident on this structure, the PIN diode 4 conducts and is equivalent to a series connection of an inductor and a resistor. In the range of 0 - 9.1 GHz, the shielding effectiveness reaches more than 10 dB. When low-power electromagnetic waves are incident on this structure, the PIN diode 4 is turned off and is equivalent to a capacitor, achieving wave transmission in the range of 0 - 7.1 GHz, and the transmission coefficient is above -3 dB. At the same time, the rectangularity coefficient of this electromagnetic energy selective surface structure is about 0.94, and it has good steep drop characteristics, which has great application value for electromagnetic protection technology. More specifically, the gap width is the prevention interval of the PIN diode 4.
[0021] In this embodiment, the upper substrate 1, the middle substrate 2, and the lower substrate 3 all adopt FR-4, a dielectric with a relative dielectric constant of 4.3 and a loss tangent of 0.025. The first metal patch 11, the second metal patch 13, and the third metal patch 31 all adopt metal copper with good conductivity and stable properties.
[0022] Specifically, with a relative permittivity of 4.3, FR-4 can respond well to and process electromagnetic wave signals in the electromagnetic environment, ensuring the transmission characteristics and stability of signals in the substrate. At the same time, with a loss tangent of 0.025, the energy loss caused by the loss of the medium itself during signal transmission is relatively small, which can effectively reduce signal attenuation and distortion, thereby improving the working efficiency and performance of the entire broadband electromagnetic bandgap structure. More specifically, copper has good electrical conductivity, which enables it to conduct current and electromagnetic waves quickly and efficiently, ensuring the smooth transmission of signals between metal patches. At the same time, copper has stable chemical properties and can maintain the stability of its physical and chemical properties under different environmental conditions, such as temperature changes and humidity changes, and is not prone to oxidation, corrosion, etc., thus ensuring the long-term reliability and stability of the metal patches and extending the service life of the entire broadband electromagnetic bandgap structure. More specifically, the broadband electromagnetic bandgap structure adopts the full-wave simulation method.
[0023] Specifically, all metal patch units are printed above the corresponding dielectric substrates.
[0024] In this embodiment, the upper substrate 1, the middle substrate 2, and the lower substrate 3 are all designed to be 5 mm long and 4 mm wide.
[0025] Specifically, by designing the upper substrate 1, the middle substrate 2, and the lower substrate 3 to be 5 mm long and 4 mm wide, this size is relatively appropriate. It will not be too large to occupy too much space in actual applications, affecting the integration and miniaturization design of the entire system, nor will it be too small to bring too much difficulty and cost to the manufacturing process, ensuring the processability and consistency of each substrate during production.
[0026] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variation thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device.
[0027] Although the embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that various changes, modifications, substitutions and variations can be made in these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A broadband energy selective surface with a steep descent characteristic, comprising an upper substrate (1), a middle substrate (2) and a lower substrate (3) from top to bottom, characterized in that, Above the upper substrate (1), there is an alternately connected first metal patch (11) and PIN diode (4) and an alternately connected second metal patch (13) and PIN diode (4). The sizes of the first metal patch (11) and the second metal patch (13) are different. Above the middle substrate (2), there is an alternately connected zigzag metal patch (21) and PIN diode (4). Above the lower substrate (3), there is an alternately connected third metal patch (31) and PIN diode (4).
2. The broadband energy selective surface with a steep drop characteristic according to claim 1, wherein The first metal patch (11), the second metal patch (13) and the third metal patch (31) are all arrow-shaped designs.
3. The broadband energy selective surface with a steep descent characteristic according to claim 2, wherein The first metal patch (11) is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.1 mm and a triangular metal patch with a bottom side of 0.5 mm and a height of 0.15 mm. The second metal patch (13) is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.2 mm and a triangular metal patch with a bottom side of 0.8 mm and a height of 0.15 mm, and the gap width is 0.8 mm.
4. A broadband electromagnetic bandgap structure having a steep attenuation characteristic according to claim 1, wherein The zigzag metal patch (21) is composed of a plurality of rectangular metal patches with a width of 0.1 mm and the gap width is 0.7 mm.
5. The broadband energy selective surface with a steep drop characteristic according to claim 2, characterized in that The third metal patch (31) is composed of a rectangular metal patch with a length of 0.45 mm and a width of 0.1 mm and a triangular metal patch with a bottom side of 0.5 mm and a height of 0.15 mm.
6. The broadband energy selective surface with a steep descent characteristic according to claim 1, characterized in that, The upper substrate (1), the middle substrate (2) and the lower substrate (3) all adopt a medium of FR-4 with a relative dielectric constant of 4.3 and a loss tangent of 0.
025. The first metal patch (11), the second metal patch (13) and the third metal patch (31) all adopt metal copper with good conductivity and stable properties.
7. A broadband electromagnetic bandgap structure with steep-slope characteristic according to claim 1, wherein The model of the PIN diode (4) is SMP1345-079LF. When the PIN diode (4) is disconnected, it is equivalent to a capacitor of 0.15 pF. When it is on, it is equivalent to a resistor of 1.5 Ω and an inductor of 0.7 nH.
8. A broadband energy selective surface with a steep descent characteristic according to claim 1, characterized in that, The upper substrate (1), the middle substrate (2) and the lower substrate (3) are all designed to be 5 mm long and 4 mm wide.