Light emitting device and measuring device

Abstract

The invention provides a light-emitting device and a measuring apparatus. The light-emitting device includes: a substrate; the light-emitting part is arranged on the substrate and is provided with a plurality of light-emitting subareas; a first switching unit that is provided on the substrate and switches a first light-emitting section of the light-emitting unit between a light-emitting state and a non-light-emitting state; and a second switching unit which is provided on the substrate on the opposite side of the light-emitting unit and the first switching unit, and which switches a second light-emitting section, which is different from the first light-emitting section of the light-emitting unit, between a light-emitting state and a non-light-emitting state.

Description

Technical Field

[0001] The present invention relates to a light-emitting device and a measuring device. Background Art

[0002] Patent Document 1 discloses a light-emitting device including: a substrate; a light-emitting element portion provided on the substrate and having 12 regions each having a light-emitting element; and a transmission circuit that supplies a transmission signal changed between a light-emitting state and a non-light-emitting state to the light-emitting element portion.

[0003] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2023-42123 Summary of the Invention

[0004] In a light-emitting device or the like having a plurality of light-emitting sections on a substrate, when a switching section for switching each light-emitting section between a light-emitting state and a non-light-emitting state is provided at one location on the substrate, the portion where the distance from the switching section to the light-emitting section becomes long may increase.

[0005] An object of the present invention is to shorten the distance from a switching section to each light-emitting section as compared with the case where a switching section for switching a plurality of light-emitting sections between a light-emitting state and a non-light-emitting state is provided at one location on the substrate.

[0006] The invention according to Solution 1 is a light-emitting device including: a substrate; a light-emitting section provided on the substrate and having a plurality of light-emitting sections; a first switching section provided on the substrate and switching a first light-emitting section of the light-emitting section between a light-emitting state and a non-light-emitting state; and a second switching section provided on the substrate on a side opposite to the first switching section with the light-emitting section interposed therebetween and switching a second light-emitting section different from the first light-emitting section of the light-emitting section between a light-emitting state and a non-light-emitting state.

[0007] In the light-emitting device according to Solution 2, the first switching section and the second switching section are connected by wiring, and the first light-emitting section and the second light-emitting section of the light-emitting section are sequentially switched between a light-emitting state and a non-light-emitting state according to a signal transmitted through the wiring.

[0008] In the light-emitting device according to Solution 3, the substrate has a rectangular shape having two first sides opposed to each other and two second sides connecting the first sides and opposed to each other, the first switching section is provided along one of the first sides, the second switching section is provided along the other of the first sides, and the wiring is provided along one of the second sides.

[0009] In the light-emitting device according to the invention described in Solution 4, a terminal is further provided, which is disposed along the other of the second sides of the substrate and receives power supply to the light-emitting unit.

[0010] In the light-emitting device according to the invention described in Solution 5, the resistance between the first switching unit and the first light-emitting partition and the resistance between the second switching unit and the second light-emitting partition are greater than the resistance of the wiring in any one of Solutions 2 to 4.

[0011] In the light-emitting device according to the invention described in Solution 6, the light-emitting units are arranged in a two-dimensional shape by arranging a plurality of the light-emitting partitions along a first direction and a second direction intersecting the first direction. The number of the light-emitting partitions arranged along the first direction is more than the number of the light-emitting partitions arranged along the second direction. The first switching unit and the second switching unit are arranged along the first direction.

[0012] In the light-emitting device according to the invention described in Solution 7, the first light-emitting partitions are arranged along the first direction, and the second light-emitting partitions are arranged along the second direction with respect to each of the first light-emitting partitions. The area irradiated with light by one of the first light-emitting partitions overlaps with the area irradiated with light by another of the second light-emitting partitions arranged along the second direction with respect to the one light-emitting partition. The first switching unit and the second switching unit select either the one light-emitting partition or the another light-emitting partition and switch it to a light-emitting state.

[0013] In the light-emitting device according to the invention described in Solution 8, the light emission amounts of the first light-emitting partitions and the second light-emitting partitions are different.

[0014] In the light-emitting device according to the invention described in Solution 9, an optical system is further provided. The optical system guides the light emitted from each of the light-emitting partitions in such a way that there is an overlapping part between the area irradiated with light by the one of the first light-emitting partitions and the area irradiated with light by the another of the second light-emitting partitions. In the optical system, the diffusivity of the light emitted from each of the light-emitting partitions in the first direction is greater than the diffusivity in the second direction.

[0015] In the light-emitting device according to the invention described in Solution 10, an optical system is further provided. The optical system guides the light emitted from each of the light-emitting partitions in such a way that there is an overlapping part between the area irradiated with light by the one of the first light-emitting partitions and the area irradiated with light by the another of the second light-emitting partitions. The optical system exerts an optical effect on the first direction and does not exert an optical effect on the second direction.

[0016] The light-emitting device according to Embodiment 11 is a measuring device, comprising: the light-emitting device according to any one of Embodiments 1 to 10; and an acquisition unit that receives reflected light from a measurement object irradiated with light emitted from the light-emitting device to acquire information related to the measurement object.

[0017] The invention according to Embodiment 12 is a light-emitting device, comprising: a substrate; and a light-emitting unit disposed on the substrate and having a plurality of light-emitting regions. The light-emitting unit is arranged in a two-dimensional shape by arranging the plurality of light-emitting regions along a first direction and a second direction intersecting the first direction. The number of the light-emitting regions arranged along the first direction is larger than the number of the light-emitting regions arranged along the second direction. The light-emitting device further comprises an optical system that guides light emitted from the light-emitting regions. In the optical system, the diffusivity of the light emitted from each light-emitting region in the first direction is larger than that in the second direction.

[0018] The invention according to Embodiment 13 is a light-emitting device, comprising: a substrate; and a light-emitting unit disposed on the substrate and having a plurality of light-emitting regions. The light-emitting unit is arranged in a two-dimensional shape by arranging the plurality of light-emitting regions along a first direction and a second direction intersecting the first direction. The number of the light-emitting regions arranged along the first direction is larger than the number of the light-emitting regions arranged along the second direction. The light-emitting device further comprises an optical system that guides light emitted from the light-emitting regions. The optical system exerts an optical effect on the first direction and does not exert an optical effect on the second direction.

[0019] The invention according to Embodiment 14 is a light-emitting device, comprising: a substrate; and a light-emitting unit disposed on the substrate and having a plurality of light-emitting regions. The light-emitting unit is arranged in a two-dimensional shape by arranging the plurality of light-emitting regions along a first direction and a second direction intersecting the first direction. The number of the light-emitting regions arranged along the first direction is larger than the number of the light-emitting regions arranged along the second direction. The light-emitting device further comprises an optical system that guides light emitted from the light-emitting regions. The optical system functions in such a way that a region irradiated with light by one light-emitting region among the plurality of light-emitting regions overlaps with a region irradiated with light by another light-emitting region arranged along the second direction with respect to the one light-emitting region.

[0020] Advantageous Effects of the Invention

[0021] According to Embodiments 1 and 11 of the present invention, compared with the case where a switching unit for switching a plurality of light-emitting regions between a light-emitting state and a non-light-emitting state is provided at one location on the substrate, the distance from the switching unit to each light-emitting region can be shortened.

[0022] According to the second aspect of the present invention, compared with the case where the first switching unit and the second switching unit are not connected, it is possible to suppress the accidental simultaneous lighting of the light-emitting partition connected to the first switching unit and the light-emitting partition connected to the second switching unit.

[0023] According to the third aspect of the present invention, compared with the case where the wiring is not arranged along the second side but is arranged on the back surface or the like, it is possible to suppress the complexity of the wiring.

[0024] According to the fourth aspect of the present invention, compared with the case where the terminals are not arranged along the other side of the second side, it is possible to suppress the enlargement of the device in the direction along the first side.

[0025] According to the fifth aspect of the present invention, compared with the case where the switching unit is arranged at one place on the substrate, it is possible to shorten the distance between the first switching unit and the second switching unit, which have a relatively large resistance, and the light-emitting partition.

[0026] According to the sixth aspect of the present invention, compared with the case where the first switching unit and the second switching unit are arranged along the second direction, it is possible to shorten the distance between each light-emitting partition and the first switching unit or the second switching unit.

[0027] According to the seventh and fourteenth aspects of the present invention, it is possible to irradiate light from one light-emitting partition and another light-emitting partition to the same area.

[0028] According to the eighth aspect of the present invention, it is possible to select the light quantity for irradiation for each area arranged along the first direction.

[0029] According to the ninth and twelfth aspects of the present invention, compared with the case where the diffusion degree of the optical system in the first direction is the same as the diffusion degree in the second direction, it is possible to irradiate light to similar areas in the second direction.

[0030] According to the tenth and thirteenth aspects of the present invention, compared with the case where the optical system functions optically in the second direction, the light is more stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The embodiments of the present invention will be described in detail with reference to the following drawings.

[0032] Figure 1 FIG. is a diagram showing an example of a measuring device to which this embodiment is applied;

[0033] Figure 2 FIG. is a diagram for explaining a light source device to which this embodiment is applied, and is a diagram showing an equivalent circuit of the light source device;

[0034] Figure 3 FIG. is a diagram for explaining the planar shape of a light-emitting chip to which this embodiment is applied, and is a top view of the light-emitting chip as viewed from the light-emitting side;

[0035] Figure 4 In Figure 4 , (a) to Figure 4 of (b) is Figure 3 an enlarged view of the light-emitting chip shown;

[0036] Figure 5 is an example of a cross-sectional view of the light-emitting chip and is a cross-sectional view cut along the V-V line of (a) of Figure 4 ;

[0037] Figure 6 is a timing chart showing an example of the operation of the light source device and the light-emitting chip;

[0038] Figure 7 is a diagram showing the planar shape of the light-emitting chip to which Embodiment 2 is applied and is a top view of the light-emitting chip observed from the light-emitting side;

[0039] Figure 8 is a diagram showing the relationship between the light-emitting chip of the present embodiment and the optical system;

[0040] Figure 9 is a diagram showing the relationship between the light-emitting chip of the present embodiment and the optical system;

[0041] Figure 10 is a diagram showing an example of the illuminance distribution of one light-emitting section belonging to a light-emitting section group and the illuminance distribution of another light-emitting section belonging to the light-emitting section group;

[0042] Figure 11 is a diagram showing an example of the irradiation surface irradiated with the light emitted from the light-emitting section of the light-emitting unit.

[0043] Symbol Explanation

[0044] 1 - Light source device, 5 - 3D sensor, 10 - Light-emitting chip, 11 - Optical system, 12 - Control unit, 20 - Light-emitting unit, 21, 22 - Light-emitting sections, 30 - Transmission unit, 30A - First transmission unit, 30B - Second transmission unit, 40 - Connection unit, 41 - Signal line, 80 - Substrate, 100 - Measuring device, 200 - Measurement control unit, S - Setting thyristor, T - Transmission thyristor, VCSEL - Vertical cavity surface emitting laser. Detailed Embodiment

[0045] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0046] Here, as an example, a case where the light source device 1 including the light-emitting chip 10 as an example of a light-emitting component is applied to the measuring device 100 for measuring the three-dimensional shape (hereinafter referred to as 3D shape) of an object to be measured will be described.

[0047] [Embodiment 1]

[0048] (Measurement device 100)

[0049] Figure 1 This is a diagram showing an example of the measurement device 100 to which this embodiment is applied.

[0050] The measurement device 100 of this embodiment measures the three-dimensional shape of an object. Hereinafter, the three-dimensional shape will be referred to as the 3D shape. The measurement device 100 is a device that measures the 3D shape according to the so-called Time of Flight (ToF) method based on light. The measurement device 100 includes a light source device 1 as an example of a light-emitting device and a three-dimensional sensor 5. Hereinafter, the three-dimensional sensor 5 will be referred to as the 3D sensor 5. In the ToF method, the time from the timing when light is emitted from the light source device 1 to the timing when it is reflected by the object and received by the 3D sensor 5 is measured. Then, the distance to the object is calculated based on the time obtained from the 3D sensor 5, and the 3D shape of the object is determined. Also, the measurement of the 3D shape is sometimes referred to as three-dimensional measurement, 3D measurement, or 3D sensing.

[0051] The light source device 1 emits light toward the object. The 3D sensor 5 acquires the reflected light that returns after being reflected by the object. The 3D sensor 5 outputs distance information related to the distance to the object based on the time measured by the ToF method from emission to reception of the reflected light. In addition, the measurement device 100 may include a measurement control unit 200. The measurement control unit 200 is configured as a computer including a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), etc., and determines the 3D shape of the object based on the distance information obtained from the 3D sensor 5.

[0052] Moreover, the measurement device 100 can be applied to the case of identifying an object based on the determined 3D shape. For example, the measurement device 100 is mounted on a portable information processing device or the like for face recognition of a user attempting to access. That is, the 3D shape of the face of the accessing user is acquired, it is determined whether access is permitted, and the portable information processing device as this device is allowed to be used only when it is recognized as a user who is permitted to access.

[0053] Furthermore, the measurement device 100 can also be applied to the case of continuously measuring the 3D shape of an object such as augmented reality (AR: Augmented Reality).

[0054] (Light source device 1)

[0055] Figure 2 FIG.

[0055] is a diagram illustrating the light source device 1 to which the present embodiment is applicable, and is a diagram showing an equivalent circuit of the light source device 1. In addition, in the light source device 1 shown in FIG. Figure 2 , the positions of the φ1 terminal, the φ2 terminal, the Vga terminal, and the φI terminal are not necessarily accurate. Figure 2 The light source device 1 includes: a light-emitting chip 10 that emits light; an optical system 11 (see FIG. Figure 2 ), which expands the irradiation range of the light emitted from the light-emitting chip 10; and a control unit 12 that controls the operation of the light-emitting chip 10.

[0056] In the present embodiment, the light source device 1 or the light-emitting chip 10 is an example of a light-emitting device. Figure 1

[0057]

[0058] (Control unit 12)

[0059] The control unit 12 includes a transmission signal generation unit 120, a lighting signal generation unit 140, a reference potential supply unit 160, and a power supply potential supply unit 170.

[0060] The transmission signal generation unit 120 generates transmission signals φ1 and φ2 that sequentially transmit a conduction state to a plurality of transmission thyristors T described later. The lighting signal generation unit 140 generates a lighting signal φI that supplies a current for lighting a VCSEL described later. The reference potential supply unit 160 supplies a reference potential Vsub. The power supply potential supply unit 170 supplies a power supply potential Vga.

[0061] (Light-emitting chip 10)

[0062] Figure 3 FIG.

[0062] is a diagram illustrating the planar shape of the light-emitting chip 10 to which the present embodiment is applicable, and is a top view of the light-emitting chip 10 as viewed from the light-emitting side. In FIG.

[0062] , the right direction of the paper surface is set as the +x direction, the upward direction is set as the +y direction, the front side of the paper surface is set as the +z direction, and the opposite directions are set as -x, -y, and -z directions, respectively. Figure 3

[0063] Figure 4 (a) to Figure 4 (b) of FIG. Figure 4 are enlarged views of the light-emitting chip 10 shown in FIG. Figure 4 . (a) of FIG. Figure 3 is an enlarged view of the +y direction side of the light-emitting chip 10 shown in FIG. Figure 4 . (b) of FIG. Figure 4 is an enlarged view of the -y direction side of the light-emitting chip 10 shown in FIG. Figure 4 . Figure 3 Figure 4 Figure 3 Figure 4 Figure 3

[0064] Figure 5 FIG.

[0064] is an example of a cross-sectional view of the light-emitting chip 10, and is along Figure 4Cross-sectional view of V-V wire cutting of (a).

[0065] The light-emitting chip 10 has a light-emitting portion 20 and a transmission portion 30 on the substrate 80 (refer to Figure 2 ). And, the light-emitting chip 10 has a connection portion 40 on the substrate 80 that connects the light-emitting portion 20 and the transmission portion 30.

[0066] Furthermore, the light-emitting chip 10 has a φ1 terminal, a φ2 terminal, a Vga terminal, a φI terminal, and a Vsub terminal.

[0067] In the present embodiment, when viewed from the +z direction side, the planar shape of the substrate 80 is a rectangular shape having a first side extending along the x direction and a second side extending along the y direction.

[0068] The light-emitting portion 20 includes a vertical cavity surface emitting laser (VCSEL). Hereinafter, the vertical cavity surface emitting laser (VCSEL) will be referred to as VCSEL.

[0069] The light-emitting portion 20 has a plurality of light-emitting partitions 21, and each of the plurality of light-emitting partitions 21 includes at least one VCSEL. In the present embodiment, the light-emitting portion 20 has 12 light-emitting partitions 21, 6 along the x direction and 2 along the y direction. Here, when distinguishing each light-emitting partition 21, the 12 light-emitting partitions 21 are referred to as light-emitting partitions 21-1 to 21-12. And, the VCSELs included in each of the light-emitting partitions 21-1 to 21-12 are sometimes referred to as VCSEL1 to VCSEL12, respectively.

[0070] When viewed from the +z direction side, the areas of the light-emitting partitions 21-1 to 21-12 of the light-emitting portion 20 in the present embodiment are equal to each other. And, when the same amount of power is supplied to the light-emitting partitions 21-1 to 21-12, the amounts of light emitted from the light-emitting partitions 21-1 to 21-12 by the light-emitting portion 20 are equal to each other.

[0071] In the light-emitting portion 20, 6 light-emitting partitions 21-1 to 21-6 are arranged in order from the -x direction side to the +x direction side. Hereinafter, the light-emitting partitions 21-1 to 21-6 are sometimes collectively referred to as the light-emitting partition group 21A. In the present embodiment, the light-emitting partitions 21-1 to 21-6 are an example of the first light-emitting partition, and the light-emitting partition group 21A is an example of the first light-emitting partition group.

[0072] Further, in the light-emitting unit 20, six light-emitting partitions 21-7 to 21-12 are arranged in order from the +x direction side to the -x direction side. Hereinafter, the light-emitting partitions 21-7 to 21-12 may be collectively referred to as a light-emitting partition group 21B. In the present embodiment, the light-emitting partitions 21-7 to 21-12 are an example of the second light-emitting partitions, and the light-emitting partition group 21B is an example of the second light-emitting partition group.

[0073] The light-emitting partition group 21A and the light-emitting partition group 21B are arranged in order from the +y direction side to the -y direction side. Incidentally, the light-emitting partitions 21-1, 21-2, 21-3, 21-4, 21-5, 21-6 belonging to the light-emitting partition group 21A are arranged along the +y direction with respect to the light-emitting partitions 21-12, 21-11, 21-10, 21-9, 21-8, 21-7 belonging to the light-emitting partition group 21B.

[0074] Further, the light-emitting unit 20 includes twelve setting thyristors S1 to S12. Hereinafter, without distinguishing the setting thyristors S1 to S12, they are referred to as a setting thyristor S.

[0075] Each setting thyristor S is connected in series with the VCSEL of the light-emitting partition 21 with the same number. Incidentally, the setting thyristors S1 to S12 are stacked on the VCSELs 1 to 12 of the light-emitting partitions 21-1 to 21-12 with the same number. That is, each light-emitting partition 21 includes a setting thyristor S and a VCSEL.

[0076] The transmission unit 30 is driven to sequentially transmit a conduction state, and switches the light-emitting partitions 21-1 to 21-12 of the light-emitting unit 20 between a light-emitting state and a non-light-emitting state. In the light-emitting chip 10 of the present embodiment, the transmission unit 30 is disposed around each light-emitting partition 21 of the light-emitting unit 20.

[0077] The transmission unit 30 includes twelve transmission thyristors T1 to T12. Hereinafter, without distinguishing the transmission thyristors T1 to T12, they are referred to as a transmission thyristor T. Further, the transmission unit 30 includes twelve lower diodes UD1 to UD12. Hereinafter, without distinguishing the lower diodes UD1 to UD12, they are referred to as a lower diode UD.

[0078] Among the transmission thyristors T1 to T12 and the lower diodes UD1 to UD12, the transmission thyristor T with the same number is connected in series with the lower diode UD. Incidentally, the transmission thyristor T is stacked on the lower diode UD formed on the substrate 80.

[0079] Further, the transmission unit 30 includes coupling diodes D1 to D11 between pairs when the transmission thyristors T1 to T12 are paired two by two in the numerical order. Hereinafter, without distinguishing the coupling diodes D1 to D11, they are referred to as the coupling diode D.

[0080] Furthermore, the transmission unit 30 includes power supply line resistors Rg1 to Rg12. Hereinafter, without distinguishing the power supply line resistors Rg1 to Rg12, they are referred to as the power supply line resistor Rg.

[0081] Further, the transmission unit 30 includes one start diode SD.

[0082] Furthermore, the transmission unit 30 includes current limiting resistors R1 and R2 which are provided to prevent excessive current from flowing through the first transmission signal line 72 for supplying the first transmission signal φ1 and the second transmission signal line 73 for supplying the second transmission signal φ2 described below.

[0083] In the light emitting chip 10 of the present embodiment, the transmission thyristors T1 to T12, the lower diodes UD1 to UD12, the coupling diodes D1 to D11, the power supply line resistors Rg1 to Rg12, the start diode SD, and the current limiting resistors R1 and R2 of the transmission unit 30 are separately arranged at two positions on the substrate 80. Incidentally, in the light emitting chip 10, the transmission thyristors T1 to T6, the lower diodes UD1 to UD6, the coupling diodes D1 to D6, the power supply line resistors Rg1 to Rg6, the start diode SD, and the current limiting resistor R1 and the transmission thyristors T7 to T12, the lower diodes UD7 to UD12, the coupling diodes D7 to D11, the power supply line resistors Rg7 to Rg12, and the current limiting resistor R2 are separately arranged at positions facing each other with the light emitting unit 20 interposed therebetween.

[0084] As Figure 4 shown in (a) of, in the light emitting chip 10, the transmission thyristors T1 to T6, the lower diodes UD1 to UD6, the coupling diodes D1 to D6, the power supply line resistors Rg1 to Rg6, the start diode SD, and the current limiting resistor R1 are arranged on the +y direction side with respect to the light emitting unit 20.

[0085] Incidentally, the transmission thyristors T1 to T6, the lower diodes UD1 to UD6, the coupling diodes D1 to D6, and the power supply line resistors Rg1 to Rg6 are arranged on the +y direction side of the light emitting unit 20 in a manner of being arranged in the numerical order from the -x direction side to the +x direction side. Further, the transmission thyristors T1 to T6, the lower diodes UD1 to UD6, the coupling diodes D1 to D6, and the power supply line resistors Rg1 to Rg6 are respectively arranged on the +y direction side of the light emitting partitions 21-1 to 21-6 of the light emitting unit 20 marked with the same numbers.

[0086] Furthermore, the startup diode SD and the current limiting resistor R1 are arranged on the -x direction side of the transfer thyristor T1.

[0087] And, as Figure 4 shown in (b) of FIG., in the light-emitting chip 10, the transfer thyristors T7 to T12, the lower diodes UD7 to UD12, the coupling diodes D7 to D11, the power supply line resistors Rg7 to Rg12, and the current limiting resistor R2 of the transfer section 30 are arranged on the -y direction side with respect to the light-emitting section 20.

[0088] Incidentally, the transfer thyristors T7 to T12, the lower diodes UD7 to UD12, the coupling diodes D7 to D11, and the power supply line resistors Rg7 to Rg12 are arranged on the -y direction side of the light-emitting section 20 in the order of numbering from the +x direction side to the -x direction side. And the transfer thyristors T7 to T12, the lower diodes UD7 to UD12, the coupling diodes D7 to D11, and the power supply line resistors Rg7 to Rg12 are respectively arranged on the -y direction side of the light-emitting partitions 21-7 to 21-12 of the light-emitting section 20 marked with the same numbers.

[0089] Furthermore, the current limiting resistor R2 is arranged on the -x direction side of the transfer thyristor T12.

[0090] Hereinafter, the transfer thyristors T1 to T6, the lower diodes UD1 to UD6, the coupling diodes D1 to D6, the power supply line resistors Rg1 to Rg6, the startup diode SD, and the current limiting resistor R1 in the transfer section 30 that are arranged on the +y direction side with respect to the light-emitting section 20 in the light-emitting chip 10 may sometimes be referred to as the first transfer section 30A.

[0091] The first transfer section 30A is arranged along one of the two sides of the rectangular substrate 80 that extends in the x direction.

[0092] Similarly, the transfer thyristors T7 to T12, the lower diodes UD7 to UD12, the coupling diodes D7 to D11, the power supply line resistors Rg7 to Rg12, and the current limiting resistor R2 in the transfer section 30 that are arranged on the -y direction side with respect to the light-emitting section 20 in the light-emitting chip 10 may sometimes be referred to as the second transfer section 30B.

[0093] The second transfer section 30B is arranged along the other side of the two sides of the rectangular substrate 80 that extends in the x direction and is located on the side opposite to the side where the first transfer section 30A is arranged.

[0094] The first transfer unit 30A is an example of a first switching unit that switches the light-emitting partitions 21-1 to 21-6, which are an example of the first light-emitting partitions, between a light-emitting state and a non-light-emitting state. Also, the second transfer unit 30B is an example of a second switching unit that switches the light-emitting partitions 21-7 to 21-12, which are an example of the second light-emitting partitions, between a light-emitting state and a non-light-emitting state.

[0095] The first transfer unit 30A and the second transfer unit 30B are connected by a power supply line 71, a first transfer signal line 72, a second transfer signal line 73, and a lighting signal line 75, which will be described later. The power supply line 71, the first transfer signal line 72, the second transfer signal line 73, and the lighting signal line 75 are an example of the wiring connecting the first switching unit and the second switching unit.

[0096] The above-mentioned VCSEL, lower diode UD, coupling diode D, and start diode SD are two-terminal semiconductor elements having an anode terminal and a cathode terminal. Also, the thyristor S and transfer thyristor T are three-terminal semiconductor elements having an anode terminal, a gate terminal, and a cathode terminal. In addition, hereinafter, the anode terminal, the cathode terminal, and the gate terminal may be omitted and referred to as the anode, the cathode, and the gate, respectively.

[0097] In the light-emitting chip 10 of the present embodiment, the VCSEL, the set thyristor S, the lower diode UD, the transfer thyristor T, the coupling diode D, the power supply line resistor Rg, and the start diode SD are formed as an integrated circuit by a semiconductor laminate epitaxially grown on a substrate 80 that is a common semiconductor substrate. Here, as an example, the semiconductor laminate is composed of a III-V compound semiconductor such as GaAs, AlGaAs, and AlAs.

[0098] The connection unit 40 connects the first transfer unit 30A of the transfer unit 30 to the light-emitting partitions 21-1 to 21-6 of the light-emitting unit 20, and also connects the second transfer unit 30B of the transfer unit 30 to the light-emitting partitions 21-7 to 21-12 of the light-emitting unit 20.

[0099] The connection unit 40 includes signal lines 41-1 to 41-6 that connect the transfer thyristors T1 to T6 of the first transfer unit 30A to the light-emitting partitions 21-1 to 21-6 with the same numbers. The signal lines 41-1 to 41-6 connect the transfer thyristors T1 to T6 of the first transfer unit 30A to the set thyristors S1 to S6 of the light-emitting partitions 21-1 to 21-6 belonging to the light-emitting partition group 21A with the same numbers.

[0100] Moreover, the connection part 40 includes transmission thyristors T7 to T12 that connect to the second transmission part 30B and signal lines 41-7 to 41-12 that connect to the light-emitting sections 21-7 to 21-12 with the same numbers. The signal lines 41-7 to 41-12 connect the transmission thyristors T7 to T12 of the second transmission part 30B and setting thyristors S7 to S12 of the light-emitting sections 21-7 to 21-12 with the same numbers that belong to the light-emitting section group 21B.

[0101] Hereinafter, without distinguishing the signal lines 41-1 to 41-12, they are referred to as signal line 41.

[0102] In this example, the signal lines 41-1 to 41-6 of the connection part 40 are arranged on the +y direction side of the light-emitting part 20. Moreover, the signal lines 41-7 to 41-12 of the connection part 40 are arranged on the -y direction side of the light-emitting part 20.

[0103] Moreover, in the light-emitting chip 10 of the present embodiment, the signal lines 41-1 to 41-12 of the connection part 40 are not provided between the light-emitting sections 21 of the light-emitting part 20.

[0104] The signal lines 41 of the connection part 40 are formed, for example, by vapor-depositing a contact metal such as copper or aluminum. When the signal lines 41 are formed of the vapor-deposited contact metal, the thickness of the signal lines 41 is thinner than that of wirings such as a power supply line 71, a first transmission signal line 72, a second transmission signal line 73, and a lighting signal line 75 described later. Therefore, the resistance of the signal lines 41 is larger than that of the wirings such as the power supply line 71, the first transmission signal line 72, the second transmission signal line 73, and the lighting signal line 75.

[0105] (Optical system 11)

[0106] The optical system 11 is arranged on the +z direction side, which is the downstream side in the direction in which light is emitted from each light-emitting section 21 of the light-emitting part 20, with respect to the light-emitting chip 10. Moreover, the optical system 11 expands the irradiation range of the light emitted from each light-emitting section 21 of the light-emitting chip 10 as it goes toward the +z direction.

[0107] As the optical system 11, an optical component such as a diffusion plate that is provided on the optical path of light and diffuses the light by scattering or the like, a diffractive optical element (DOE: Diffractive Optical Element) that changes the angle of incident light and emits it, or / and a lens can be used.

[0108] In the light source device 1, the light emitted from each light-emitting section 21 of the light-emitting chip 10 and having its irradiation range expanded by the optical system 11 is irradiated onto an irradiation surface that is at a certain distance from the light source device 1 in the +z direction. Incidentally, the light emitted from each light-emitting section 21 of the light-emitting chip 10 is irradiated onto different sections of the irradiation surface. That is, the irradiation surface is divided into a plurality of irradiation sections corresponding to the plurality of light-emitting sections 21 of the light-emitting chip 10.

[0109] (Connection relationship in the light-emitting chip 10)

[0110] Next, the electrical connection of each element in the light-emitting chip 10 will be described.

[0111] The anodes of each of the VCSEL and the lower diode UD are connected to the substrate 80 (the anodes are shared).

[0112] The reference potential Vsub is supplied to these anodes via a back electrode 91 which is a Vsub terminal provided on the back surface of the substrate 80.

[0113] Moreover, the cathodes of each of the VCSELs are connected to the anode of the setting thyristor S. And the cathodes of each of the lower diodes UD are connected to the anode of the transmission thyristor T.

[0114] In addition, this connection is the structure when using a p-type substrate 80. In the case of using an n-type substrate, the polarities are reversed. In the case of using an intrinsic (i)-type substrate without added impurities, a terminal for supplying the reference potential Vsub is provided on the side of the substrate where the light-emitting section 20 and the transmission section 30 are provided.

[0115] Along the arrangement of the transmission thyristors T, the cathodes of the odd-numbered transmission thyristors T1, T3, T5, T7, T9, T11 are connected to the first transmission signal line 72. And the first transmission signal line 72 is connected to the φ1 terminal via a current limiting resistor R1. The first transmission signal φ1 is supplied from the transmission signal generation section 120 of the control section 12 to this φ1 terminal.

[0116] On the other hand, along the arrangement of the transmission thyristors T, the cathodes of the even-numbered transmission thyristors T2, T4, T6, T8, T10, T12 are connected to the second transmission signal line 73. And the second transmission signal line 73 is connected to the φ2 terminal via a current limiting resistor R2. The second transmission signal φ2 is supplied from the transmission signal generation section 120 of the control section 12 to this φ2 terminal.

[0117] The cathodes of each of the setting thyristors S are connected to the lighting signal line 75. The lighting signal line 75 is connected to the φI terminal. In the light-emitting chip 10, the lighting signal φI is supplied from the lighting signal generation section 140 of the control section 12 to the φI terminal via a current limiting resistor RI provided outside the light-emitting chip 10. The lighting signal φI supplies a current for lighting to the VCSEL.

[0118] The gates Gt1 to Gt12 of the transmission thyristors T1 to T12 are connected one-to-one to the gates Gs1 to Gs12 of the set thyristors S1 to S12 with the same numbers. Therefore, the gates Gt1 to Gt12 and the gates Gs1 to Gs12 with the same numbers have the same potential. Therefore, for example, the gate Gt1 (gate Gs1) is mentioned, indicating the same potential.

[0119] Hereinafter, without distinguishing the gates Gt1 to Gt12, they are referred to as the gate Gt. And, without distinguishing the gates Gs1 to Gs12, they are referred to as the gate Gs.

[0120] Coupling diodes D1 to D11 are respectively connected between the gates Gt that pair the gates Gt1 to Gt12 of the transmission thyristors T1 to T12 in order of number. That is, the coupling diodes D1 to D11 are directly connected in such a way that they are sandwiched between the gates Gt1 to Gt12 respectively. And, the orientation of the coupling diode D1 is connected along the direction of the current flowing from the gate Gt1 to the gate Gt2. The same applies to the other coupling diodes D2 to D11.

[0121] The gate Gt (gate Gs) of the transmission thyristor is connected to the power supply line 71 via the power supply line resistor Rg provided corresponding to the transmission thyristor T respectively. The power supply line 71 is connected to the Vga terminal. The power supply potential Vga is supplied from the power supply potential supply unit 170 of the control unit 12 to the Vga terminal.

[0122] And, the gate Gt1 of the transmission thyristor T is connected to the cathode of the start diode SD. On the other hand, the anode of the start diode SD is connected to the second transmission signal line 73.

[0123] Next, the cross-sectional structure of the light-emitting chip 10 will be described.

[0124] In the light-emitting chip 10, a p-type anode layer 81, a light-emitting layer 82, and an n-type cathode layer 83 that constitute the VCSEL and the lower diode UD are sequentially provided on the p-type substrate 80. In the light-emitting chip 10 of the present embodiment, the p-type anode layer 81 and the n-type cathode layer 83 are composed of a distributed Bragg reflector (DBR: Distributed Bragg Reflector) layer formed by laminating a plurality of semiconductor layers having a refractive index difference. Therefore, hereinafter, the p-type anode layer 81 is referred to as the p anode (DBR) layer 81. Similarly, the n-type cathode layer 83 is referred to as the n cathode (DBR) layer 83.

[0125] And, in the light-emitting chip 10, a tunnel junction layer 84 is provided on the n cathode (DBR) layer 83.

[0126] Furthermore, on the tunnel junction layer 84, the light-emitting chip 10 is sequentially provided with a p-type anode layer 85, an n-type gate layer 86, a p-type gate layer 87, and an n-type cathode layer 88 that constitute the setting thyristor S, the transmission thyristor T, the coupling diode D, and the power line resistor Rg. Hereinafter, the p-type anode layer 85 is referred to as the p-anode layer 85, the n-type gate layer 86 is referred to as the n-gate layer 86, the p-type gate layer 87 is referred to as the p-gate layer 87, and the n-type cathode layer 88 is referred to as the n-cathode layer 88.

[0127] Elements such as VCSEL, the lower diode UD, the setting thyristor S, and the transmission thyristor T are composed of a plurality of islands separated by etching away a part of each of the above layers. In addition, an island is sometimes referred to as a mesa, and the etching for forming an island (mesa) is sometimes referred to as mesa etching.

[0128] Moreover, in the light-emitting chip 10, these islands are connected to wirings such as the power line 71, the first transmission signal line 72, the second transmission signal line 73, and the lighting signal line 75 via through holes provided in the protective layer. In addition, wirings such as the power line 71, the first transmission signal line 72, the second transmission signal line 73, and the lighting signal line 75 are formed of, for example, a gold plating material or the like.

[0129] In the following description, the description of the protective layer and the through holes is omitted.

[0130] And, as Figure 5 shown, a back electrode 91 serving as a Vsub terminal is provided on the back surface of the substrate 80.

[0131] Here, the designations of the p-anode (DBR) layer 81 and the n-cathode (DBR) layer 83 correspond to their functions when constituting VCSEL and the lower diode UD. That is, the p-anode (DBR) layer 81 functions as an anode, and the n-cathode (DBR) layer 83 functions as a cathode.

[0132] Furthermore, the designations of the p-anode layer 85, the n-gate layer 86, the p-gate layer 87, and the n-cathode layer 88 correspond to their functions when constituting the setting thyristor S and the transmission thyristor T. That is, the p-anode layer 85 functions as an anode, the n-gate layer 86 and the p-gate layer 87 function as gates, and the n-cathode layer 88 functions as a cathode.

[0133] In addition, when the above layers constitute the coupling diode D and the power line resistor Rg, as will be described later, they have different functions.

[0134] In addition, as described below, among the multiple islands included in the light-emitting chip 10, there are islands that do not include a part of the layers of the p-anode (DBR) layer 81, the light-emitting layer 82, the n-cathode (DBR) layer 83, the tunnel junction layer 84, the p-anode layer 85, the n-gate layer 86, the p-gate layer 87, and the n-cathode layer 88. For example, the islands 301 and 302 described later do not include a part of the n-cathode layer 88.

[0135] Next, an example of the planar layout of the light-emitting chip 10 will be described using Figure 3 and Figure 4 from (a) to Figure 4 of (b).

[0136] On the island 301, the set thyristor S1 and VCSEL1 included in the light-emitting partition 21 are provided. On the island 302, the transmission thyristor T1 and the coupling diode D1 are provided. On the island 303, the power supply line resistor Rg1 is provided. On the island 304, the start diode SD is provided. On the island 305, the current limiting resistor R1 is provided, and on the island 306, the current limiting resistor R2 is provided.

[0137] In addition, a plurality of islands identical to the islands 301, 302, and 303 are juxtaposed and formed on the light-emitting chip 10. On these islands, VCSEL2 to VCSEL12, set thyristors S2 to S12, lower diodes UD2 to UD12, transmission thyristors T2 to T12, coupling diodes D2 to D11, etc. are provided in the same manner as on the islands 301, 302, and 303.

[0138] Here, the islands 301 to 306 will be described in detail by Figure 3 , Figure 4 from (a), Figure 5 and so on.

[0139] As Figure 5 shows, the VCSEL1 provided on the island 301 is composed of a p-anode (DBR) layer 81, a light-emitting layer 82, and an n-cathode (DBR) layer 83. The set thyristor S is composed of a p-anode layer 85, an n-gate layer 86, a p-gate layer 87, and an n-cathode layer 88 laminated via a tunnel junction layer 84 laminated on the n-cathode (DBR) layer 83 of the VCSEL1.

[0140] As Figure 5 shown by the black marking, the n-cathode (DBR) layer 83 of the VCSEL includes a current narrowing layer that narrows the current. The current narrowing layer becomes a current blocking portion β where current does not easily flow due to oxidation of a part of the semiconductor layer constituting the n-cathode (DBR) layer exposed by mesa etching from the outer periphery. On the other hand, the central portion of the semiconductor layer constituting the n-cathode (DBR) layer that is not oxidized becomes a current passing portion α where current easily flows. As Figure 4As shown by VCSEL1 in (a), the inner side of the circular shape on the inner peripheral side is the current passing portion α, and the outer side of the circle is the current blocking portion β. Additionally, the current blocking portion β does not need to completely block the flow of current, as long as the current is concentrated in the current passing portion α. That is, the current blocking portion β only needs to make the current less likely to flow than the current passing portion α.

[0141] By providing the current blocking portion β, the power consumed by non-radiative recombination can be suppressed. By providing the current blocking portion β, low power consumption and an improvement in light extraction efficiency can be achieved. Additionally, the light extraction efficiency is the amount of light that can be extracted per unit of power.

[0142] Moreover, in the set thyristor S1, an n-type ohmic electrode 321 is provided in the region 311 of the n-cathode layer 88. Hereinafter, the n-type ohmic electrode will be referred to as the n-ohmic electrode. The n-ohmic electrode 321 has a circular shape surrounding the current passing portion α.

[0143] Moreover, in the set thyristor S1, a p-type ohmic electrode 331 is provided on the p-gate layer 87 exposed by removing the n-cathode layer 88. Hereinafter, the p-type ohmic electrode will be referred to as the p-ohmic electrode.

[0144] Moreover, in the set thyristor S1, the n-ohmic electrode 321 is used as the cathode terminal. Moreover, in the set thyristor S1, the p-ohmic electrode 331 is used as the terminal of the gate Gs1.

[0145] Similar to the VCSEL, the lower diode UD1 provided on the island 302 is composed of a p-anode (DBR) layer 81, a light-emitting layer 82, and an n-cathode (DBR) layer 83. Similar to the set thyristor S1, the transmission thyristor T1 is composed of a p-anode layer 85, an n-gate layer 86, a p-gate layer 87, and an n-cathode layer 88 laminated via a tunnel junction layer 84 laminated on the n-cathode (DBR) layer 83 of the lower diode UD1.

[0146] Moreover, on the transmission thyristor T1, an n-ohmic electrode 323 is provided in the region 313 on the n-cathode layer 88.

[0147] Moreover, in the transmission thyristor T1, a p-ohmic electrode 332 is provided on the p-gate layer 87 exposed by removing the n-cathode layer 88.

[0148] Moreover, in the transmission thyristor T1, the n-ohmic electrode 323 is used as the cathode terminal. Moreover, in the transmission thyristor T1, the p-ohmic electrode 332 is used as the terminal of the gate Gt1.

[0149] Similarly, the coupling diode D1 provided on the island 302 is composed of a p-gate layer 87 and an n-cathode layer 88.

[0150] Also, in the coupling diode D1, an n-ohmic electrode 324 is provided in a region 314 on the n-cathode layer 88.

[0151] In the coupling diode D1, the n-ohmic electrode 324 is used as the cathode terminal. Further, in the coupling diode D1, the p-ohmic electrode 332 is used as the anode terminal. Here, the anode terminal of the coupling diode D1 is the same as the gate Gt1.

[0152] The power supply line resistance Rg1 provided in the island 303 is constituted by the p-gate layer 87. That is, the power supply line resistance Rg1 has a pair of p-ohmic electrodes 333, 334 provided on the p-gate layer 87 exposed by removing the n-cathode layer 88. And the power supply line resistance Rg1 sets the p-gate layer 87 between the pair of p-ohmic electrodes 333, 334 as a resistance.

[0153] The start-up diode SD provided in the island 304 is constituted by the p-gate layer 87 and the n-cathode layer 88. That is, the start-up diode SD uses the n-ohmic electrode 325 provided in a region 315 on the n-cathode layer 88 as the cathode terminal. Further, the start-up diode SD uses the p-ohmic electrode 335 provided on the p-gate layer 87 exposed by removing the n-cathode layer 88 as the anode terminal.

[0154] The current limiting resistor R1 provided in the island 305 and the current limiting resistor R2 provided in the island 306 are provided in the same manner as the power supply line resistance Rg1 provided in the island 303, and respectively use the p-gate layer 87 between two p-ohmic electrodes (unsigned) as a resistance.

[0155] Next, the connection relationship between the components will be described.

[0156] An n-ohmic electrode 321, which is the cathode terminal of the set thyristor S of the light-emitting section 21-1 provided in the island 301, is connected to the lighting signal line 75.

[0157] The cathode terminal of the set thyristor S of another light-emitting section 21 provided on the same island as the island 301 is connected to the lighting signal line 75.

[0158] The first transmission signal line 72 includes a first extension portion 72a extending in the x direction on the +y direction side of the light-emitting portion 20 and a second extension portion 72b extending in the x direction on the -y direction side of the light-emitting portion 20. Further, the first transmission signal line 72 includes a connection portion 72c extending in the y direction on the +x direction side of the light-emitting portion 20 and connecting the +x direction side end of the first extension portion 72a and the +x direction side end of the second extension portion 72b. Incidentally, the first extension portion 72a of the first transmission signal line 72 is arranged to extend along the transmission thyristors T1 to T6 arranged in the x direction. And the second extension portion 72b of the first transmission signal line 72 is arranged to extend along the transmission thyristors T7 to T11 arranged in the x direction.

[0159] An n-ohm electrode 323, which is the cathode terminal of the transmission thyristor T1 provided on the island 302, is connected to the first transmission signal line 72. The cathode terminals of other odd-numbered transmission thyristors T provided on the same island as the island 302 are connected to the first transmission signal line 72. Specifically, the cathode terminals of the transmission thyristors T1, T3, and T5 are connected to the first extension portion 72a of the first transmission signal line 72. And the cathode terminals of the transmission thyristors T7, T9, and T11 are connected to the second extension portion 72b of the first transmission signal line 72.

[0160] Furthermore, the first transmission signal line 72 is connected to the φ1 terminal via a current limiting resistor R1 provided on the island 305. Incidentally, the -x direction side end of the first extension portion 72a of the first transmission signal line 72 is connected to the φ1 terminal.

[0161] The second transmission signal line 73 includes a first extension portion 73a extending in the x direction on the +y direction side of the light-emitting portion 20 and a second extension portion 73b extending in the x direction on the -y direction side of the light-emitting portion 20. Further, the second transmission signal line 73 includes a connection portion 73c extending in the y direction on the +x direction side of the light-emitting portion 20 and connecting the +x direction side end of the first extension portion 73a and the +x direction side end of the second extension portion 73b. Incidentally, the first extension portion 73a of the second transmission signal line 73 is arranged to extend along the transmission thyristors T1 to T6 arranged in the x direction. And the second extension portion 73b of the second transmission signal line 73 is arranged to extend along the transmission thyristors T7 to T12 arranged in the x direction.

[0162] In this example, the first extension portion 73a, the connection portion 73c, and the second extension portion 73b of the second transmission signal line 73 are arranged on the inner peripheral side of the light-emitting chip 10 closer than the second extension portion 72b, the connection portion 72c, and the first extension portion 72a of the first transmission signal line 72.

[0163] An n-ohm electrode (unsigned), which is the cathode terminal of the transmission thyristors T with even numbers provided on the island (not labeled), is connected to the second transmission signal line 73. Specifically, the cathode terminals of the transmission thyristors T6, T4, and T2 are connected to the first extension 73a of the second transmission signal line 73. Also, the cathode terminals of the transmission thyristors T12, T10, and T8 are connected to the second extension 73b of the second transmission signal line 73.

[0164] The second transmission signal line 73 is connected to the φ2 terminal via a current limiting resistor R2 provided on the island 306. Incidentally, the end on the -x direction side of the second extension 73b of the second transmission signal line 73 is connected to the φ2 terminal.

[0165] Furthermore, the second transmission signal line 73 is connected to a p-ohm electrode 335, which is the anode terminal of the start diode SD provided on the island 304. Incidentally, the end on the -x direction side of the first extension 73a of the second transmission signal line 73 is connected to the p-ohm electrode 335, which is the anode terminal of the start diode SD.

[0166] The power supply line 71 includes a first extension 71a that extends along the x direction on the +y direction side of the light emitting portion 20 and a second extension 71b that extends along the x direction on the -y direction side of the light emitting portion 20. Also, the power supply line 71 includes a connection portion 71c that extends along the y direction on the +x direction side of the light emitting portion 20 and connects the end on the +x direction side of the first extension 71a and the end on the +x direction side of the second extension 71b. Incidentally, the first extension 71a of the power supply line 71 is arranged to extend along the power supply line resistors Rg1 to Rg6 arranged in the x direction. And the second extension 71b of the power supply line 71 is arranged to extend along the power supply line resistors Rg7 to Rg12 arranged in the x direction.

[0167] A p-ohm electrode 334, which is one terminal of the power supply line resistor Rg1 provided on the island 303, is connected to the power supply line 71. The power supply line 71 is connected to a p-ohm electrode (unsigned), which is one terminal of the other power supply line resistors Rg2 to Rg12.

[0168] Specifically, one terminal of the power supply line resistors Rg2 to Rg6 is connected to the first extension 71a of the power supply line 71. And one terminal of the power supply line resistors Rg7 to Rg12 is connected to the second extension 71b of the power supply line 71.

[0169] Furthermore, the power supply line 71 is connected to the Vga terminal. Incidentally, the end on the -x direction side of the first extension 71a of the power supply line 71 is connected to the Vga terminal.

[0170] The p-ohmic electrode 332, which is the anode terminal of the transfer thyristor T1 provided on the island 302, is connected to the p-ohmic electrode 333, which is the other terminal of the power supply line resistor Rg1 provided on the island 303, by the connection wiring 77. Also, the anode terminals of the other transfer thyristors T2 to T12 provided on the same island as the island 302 and the other terminals of the other power supply line resistors Rg2 to Rg12 provided on the same island as the island 303 are connected by the connection wiring 77.

[0171] Also, the p-ohmic electrode 332, which is the anode terminal of the transfer thyristor T1 provided on the island 302, is connected to the n-ohmic electrode 325, which is the cathode terminal of the start diode SD provided on the island 304, by the connection wiring 78.

[0172] Furthermore, the n-ohmic electrode 324, which is the cathode terminal of the coupling diode D1 provided on the island 302, is connected to the p-ohmic electrode (unsigned) of the gate terminal Gt2 of the adjacent transfer thyristor T2 by the connection wiring 79. Similarly, the cathode terminals of the coupling diodes D2 to D11 and the gate terminals Gt3 to Gt12 of the transfer thyristors T3 to T12 with a larger number are connected by the connection wiring 79. In addition, in the light-emitting chip 10 of the present embodiment, the coupling diode D6 and the transfer thyristor T7 are arranged at positions separated from each other in the y direction with the light-emitting portion 20 interposed therebetween. Therefore, as Figure 3 shown, the connection wiring 79 connecting the cathode terminal of the coupling diode D6 and the gate terminal Gt7 of the transfer thyristor T7 has a shape extending along the y direction on the +x direction side of the light-emitting portion 20.

[0173] Also, the p-ohmic electrode 331, which is the gate terminal Gs1 of the setting thyristor S1 provided on the island 301, is connected to the p-ohmic electrode 332, which is the gate terminal Gt1 of the transfer thyristor T1 provided on the island 302, by the signal line 41-1.

[0174] The gate terminals Gs2 to G12 of the other setting thyristors S2 to S12 provided on the same island as the island 301 and the gate terminals Gt2 to Gt12 of the transfer thyristors T2 to T12 with the same numbers provided on the same island as the island 302 are connected by the signal lines 41-2 to 41-12.

[0175] In the light-emitting chip 10 of the present embodiment, the gate terminals Gs1 to Gs12 of the setting thyristors S1 to S12 and the gate terminals Gt1 to Gt12 of the transfer thyristors T1 to T12 with the same numbers are arranged in a manner of being arranged along the y direction. Thus, the respective signal lines 41-1 to 41-12 are in a straight line shape extending along the y direction from the gate terminals Gs1 to Gs12 toward the gate terminals Gt1 to Gt12.

[0176] Further, in the light-emitting chip 10 of the present embodiment, the connection portion 71c of the power supply line 71, which is an example of the wiring connecting the first transmission portion 30A and the second transmission portion 30B, the connection portion 72c of the first transmission signal line 72, and the connection portion 73c of the second transmission signal line 73 are provided along one side extending in the y direction of the rectangular substrate 80.

[0177] Furthermore, in the light-emitting chip 10 of the present embodiment, the φ1 terminal, φ2 terminal, Vga terminal, and φI terminal, which are examples of the terminals for receiving the power supply to the light-emitting portion 20, are provided along the other side extending in the y direction of the rectangular substrate 80.

[0178] In addition, the above connections and structures are for the case of using the p-type substrate 80. In the case of using an n-type substrate, the polarities are opposite. And in the case of using an i-type substrate, a terminal for supplying the reference potential Vsub is provided on the side of the substrate where the light-emitting portion 20, the transmission portion 30, and the connection portion 40 are provided. And the connections and structures are the same as in either the case of using a p-type substrate or the case of using an n-type substrate.

[0179] (Thyristor)

[0180] Next, the basic operations of the transmission thyristor T and the setting thyristor S of the light-emitting chip 10 will be described. In addition, hereinafter, the transmission thyristor T and the setting thyristor S may sometimes be simply referred to as thyristors. As described above, a thyristor is a semiconductor element having three terminals: an anode terminal, a cathode terminal, and a gate terminal. For example, a p-anode layer 85 and a p-gate layer 87, which are p-type semiconductor layers made of GaAs, AlGaAs, AlAs, etc., and an n-gate layer 86 and an n-cathode layer 88, which are n-type semiconductor layers, are stacked on the substrate 80 to form it. That is, the thyristor has a pnpn structure. Here, as an example, the forward potential (diffusion potential) Vd of the pn junction formed by the p-type semiconductor layer and the n-type semiconductor layer is set to 1.5V for explanation.

[0181] Hereinafter, as an example, the reference potential Vsub supplied to the back electrode 91 (refer to Figure 5 ) as the Vsub terminal is set to the high-level potential (hereinafter referred to as "H".) of 0V, and the power supply potential Vga supplied to the Vga terminal is set to the low-level potential (hereinafter referred to as "L".) of -5V for explanation. Therefore, it is sometimes referred to as "H" (0V) and "L" (-5V).

[0182] First, the operation of the thyristor alone will be described. Here, it is assumed that the anode of the thyristor is 0V.

[0183] A thyristor in the off state with no current flowing between the anode and the cathode transitions (turns on) to the on state when a potential lower than the threshold voltage (a negative potential with a larger absolute value) is applied to the cathode. Here, the threshold voltage of the thyristor is the value obtained by subtracting the forward potential Vd (1.5 V) of the pn junction from the potential of the gate.

[0184] When it becomes the on state, the gate of the thyristor becomes a potential close to the potential of the anode terminal. Here, the anode is 0 V, so it is assumed that the gate becomes 0 V. Also, the cathode of the thyristor in the on state becomes a potential close to the potential after subtracting the forward potential Vd (1.5 V) from the potential of the anode. Here, the anode is 0 V, so the cathode of the thyristor in the on state becomes a potential close to -1.5 V (a negative potential with an absolute value larger than 1.5 V). Additionally, the potential of the cathode is set according to the relationship with the power supply that supplies current to the thyristor in the on state.

[0185] The thyristor in the on state transitions (turns off) to the off state when the cathode becomes a potential higher (a negative potential with a smaller absolute value, 0 V, or a positive potential) than the potential required to maintain the on state (the potential close to -1.5 V mentioned above).

[0186] On the other hand, if a potential lower than the potential required to maintain the on state (a negative potential with a larger absolute value) is continuously applied to the cathode of the thyristor in the on state and a current (holding current) that can maintain the on state is supplied, the thyristor maintains the on state.

[0187] Next, the operation in the state where the VCSEL and the set thyristor S are stacked will be described.

[0188] The set thyristor S is stacked with the VCSEL and connected in series. Therefore, the potential of the lighting signal φI is divided between the VCSEL and the set thyristor S. Here, it is assumed that the voltage applied to the VCSEL is -1.7 V for explanation. In this way, when the set thyristor S is in the off state, -3.3 V is applied to the set thyristor S.

[0189] As described above, when the absolute value of the threshold voltage of the set thyristor S in the off state is greater than -3.3 V, the potential applied to the cathode of the set thyristor S is lower than the threshold voltage, so the set thyristor S is turned on. In this way, current flows through the series-connected VCSEL and the set thyristor S, and the VCSEL emits light. On the other hand, when the absolute value of the threshold voltage of the set thyristor S is less than -3.3 V, the set thyristor S is not turned on and remains in the off state.

[0190] Additionally, if the set thyristor S is turned on, the absolute value of the voltage applied to the series-connected VCSEL and the set thyristor S will be due to the current limiting resistor RI (refer to Figure 2) decreases. However, if the voltage applied to the set thyristor S is the voltage to maintain the conduction state of the set thyristor S, the set thyristor S maintains the conduction state. Thus, the VCSEL also continues to emit light.

[0191] In addition, the voltage shown above is an example and will change according to the emission wavelength and light quantity of the VCSEL. In this case, it is only necessary to adjust the potential (“L”) of the lighting signal φI.

[0192] (Operations of the light source device 1 and the light-emitting chip 10)

[0193] Next, the operations of the light source device 1 and the light-emitting chip 10 will be described.

[0194] <Timing diagram>

[0195] Figure 6 is a timing diagram showing an example of the operations of the light source device 1 and the light-emitting chip 10. Figure 6 is a timing diagram for controlling the lighting or non-lighting of the VCSELs 1 to 4 included in the light-emitting sections 21-1 to 21-4 of the light-emitting chip 10. In addition, in Figure 6 , VCSELs 1, 2, and 3 are lit and VCSEL 4 is not lit.

[0196] In Figure 6 , it is assumed that the time progresses alphabetically from time a to time k. VCSEL 1 is controlled for lighting or non-lighting during period T(1), VCSEL 2 during period T(2), VCSEL 3 during period T(3), and VCSEL 4 during period T(4). Hereinafter, the control of lighting or non-lighting will be referred to as lighting control.

[0197] Here, periods T(1), T(2), T(3), …… are set as periods of the same length and are not distinguished separately and are referred to as period T when not distinguished.

[0198] The first transmission signal φ1 sent to the φ1 terminal (refer to Figure 3 , Figure 4 ’s (a)) and the second transmission signal φ2 sent to the φ2 terminal (refer to Figure 3 , Figure 4 ’s (b)) are signals having two potentials of “H” (0 V) and “L” (-5 V). And the first transmission signal φ1 and the second transmission signal φ2 repeat the waveform in units of two consecutive periods T such as period T(1) and period T(2), for example.

[0199] Hereinafter, “H” (0 V) and “L” (-5 V) may sometimes be abbreviated as “H” and “L”.

[0200] The first transmission signal φ1 transitions from "H" (0V) to "L" (-5V) at the start time b of period T(1), and transitions from "L" to "H" at time f. Also, at the end time i of period T(2), it transitions from "H" to "L".

[0201] The second transmission signal φ2 is "H" (0V) at the start time b of period T(1), and transitions from "H" (0V) to "L" (-5V) at time e. Also, at the end time i of period T(2), it transitions from "L" to "H".

[0202] If the first transmission signal φ1 and the second transmission signal φ2 are compared, the second transmission signal φ2 is equivalent to the signal obtained by shifting the first transmission signal φ1 backward by period T on the time axis. On the other hand, in the second transmission signal φ2, the waveforms shown by the dashed lines within period T(1) and the waveforms within period T(2) repeat after period T(3). The reason why the waveform of period T(1) of the second transmission signal φ2 is different from that after period T(3) is that period T(1) is the period when the light source device 1 starts operating.

[0203] As described later, this set of transmission signals, the first transmission signal φ1 and the second transmission signal φ2, specify the VCSELs with the same number as the conducting state of the transmission thyristor T to be the objects of lighting or non - lighting (lighting control) by propagating the conducting state of the transmission thyristor T in sequential order.

[0204] Next, the lighting signal φI supplied to the φI terminal (refer to Figure 2 、 Figure 3 ) will be described. The lighting signal φI is a signal having two potentials, "H" (0V) and "L" (-5V).

[0205] Here, the lighting signal φI within period T(1) for the lighting control of VCSEL1 will be described. The lighting signal φI is "H" (0V) at the start time b of period T(1), and transitions from "H" (0V) to "L" (-5V) at time c. Also, it transitions from "L" to "H" at time d and maintains "H" at time e.

[0206] Refer to Figure 2 and according to Figure 6 the timing diagram shown, the operations of the light source device 1 and the light - emitting chip 10 will be described. Additionally, hereinafter, periods T(1) and T(2) for the lighting control of VCSEL1 and VCSEL2 will be described.

[0207] (1) Time a

[0208] At time a, the reference potential supply unit 160 of the control unit 12 of the light source device 1 sets the reference potential Vsub to "H" (0V). The power supply potential supply unit 170 of the control unit 12 sets the power supply potential Vga to "L" (-5V). The transmission signal generation unit 120 of the control unit 12 sets the first transmission signal φ1 and the second transmission signal φ2 to "H" (0V) respectively. As a result, the φ1 terminal and the φ2 terminal of the light-emitting chip 10 become "H". The potential of the first transmission signal line 72 connected to the φ1 terminal via the current limiting resistor R1 also becomes "H", and the second transmission signal line 73 connected to the φ2 terminal via the current limiting resistor R2 also becomes "H" (refer to Figure 2 ).

[0209] Moreover, the lighting signal generation unit 140 of the control unit 12 sets the lighting signal φI to "H" (0V). As a result, the φI terminal of the light-emitting chip 10 becomes "H" via the current limiting resistor RI, and the lighting signal line 75 connected to the φI terminal also becomes "H" (0V).

[0210] The p-anode layer 85 that sets the anode of the thyristor S is connected to the n-cathode (DBR) layer 83 that is the cathode of the VCSEL via the tunnel junction layer 84, and the p-anode (DBR) layer 81 that is the anode of the VCSEL is connected to the Vsub terminal set to "H".

[0211] The p-anode layer 85 that sets the anode of the transmission thyristor T is connected to the n-cathode (DBR) layer 83 that is the cathode of the lower diode UD via the tunnel junction layer 84, and the p-anode (DBR) layer 81 that is the anode of the lower diode UD is connected to the Vsub terminal set to "H".

[0212] The cathodes of the odd-numbered transmission thyristors T1, T3, T5, T7, T9, T11 are connected to the first transmission signal line 72 and set to "H" (0V). The cathodes of the even-numbered transmission thyristors T2, T4, T6, T8, T10, T12 are connected to the second transmission signal line 73 and set to "H". Therefore, both the anode and the cathode of the transmission thyristor T become "H", and it is in the off state. Also, both the anode and the cathode of the lower diode UD become "H", and it is in the off state.

[0213] The cathode terminal of the set thyristor S is connected to the lighting signal line 75 of "H" (0V). Therefore, both the anode and the cathode of the set thyristor S become "H", and it is in the off state. Also, both the anode and the cathode of the VCSEL become "H", and it is in the off state.

[0214] As described above, the gate Gt1 is connected to the cathode of the start-up diode SD. The gate Gt1 is connected to the power supply line 71 of the power supply potential Vga ("L" (-5V)) via the power supply line resistor Rg1. Also, the anode terminal of the start-up diode SD is connected to the second transmission signal line 73 and is connected to the φ2 terminal of "H" (0V) via the current limiting resistor R2. Therefore, the start-up diode SD is forward-biased, and the cathode (gate Gt1) of the start-up diode SD becomes a value (-1.5V) obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the anode of the start-up diode SD ("H" (0V)). And when the gate Gt1 becomes -1.5V, the anode (gate Gt1) of the coupling diode D1 is -1.5V, and the cathode is connected to the power supply line 71 ("L" (-5V)) via the power supply line resistor Rg2, so it becomes forward-biased. Therefore, the potential of the gate Gt2 becomes -3V obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the gate Gt1 (-1.5V). Further, the anode (gate Gt1) of the coupling diode D2 is -3V, and the cathode is connected to the power supply line 71 ("L" (-5V)) via the power supply line resistor Rg2, so it becomes forward-biased. Therefore, the potential of the gate Gt3 becomes -4.5V obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the gate Gt2 (-3V). However, the fact that the anode of the start-up diode SD is "H" (0V) does not affect the gates Gt numbered 4 or more, and the potentials of these gates Gt become "L" (-5V) which is the potential of the power supply line 71.

[0215] In addition, since the gate Gt is the gate Gs, the potential of the gate Gs is the same as the potential of the gate Gt. Therefore, the threshold voltages of the transfer thyristor T and the setting thyristor S become values obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potentials of the gates Gt and Gs. That is, the threshold voltages of the transfer thyristor T1 and the setting thyristor S1 become -3V, the threshold voltages of the transfer thyristor T2 and the setting thyristor S2 become -4.5V, the threshold voltages of the transfer thyristor T3 and the setting thyristor S3 become -6V, and the threshold voltages of the transfer thyristor T and the setting thyristor S numbered 4 or more become -6.5V.

[0216] (2) Time b

[0217] At Figure 6 the time b shown, the first transmission signal φ1 transitions from "H" (0V) to "L" (-5V). Thereby, the light source device 1 starts operating.

[0218] When the first transmission signal φ1 transitions from “H” to “L”, the potential of the first transmission signal line 72 transitions from “H” (0 V) to “L” (-5 V) via the φ1 terminal and the current limiting resistor R1. As a result, the voltage applied to the transmission thyristor T1 is -3.3 V, so the transmission thyristor T1 with a threshold voltage of -3 V is turned on. At this time, current flows through the lower diode UD1 and transitions from the off state to the on state. When the transmission thyristor T1 is turned on, the potential of the first transmission signal line 72 becomes a potential close to -3.2 V (a negative potential with an absolute value greater than 3.2 V) obtained by subtracting the forward potential Vd (1.5 V) of the pn junction from the potential of the anode of the transmission thyristor T1 (which is -1.7 V as the potential applied to the lower diode UD1).

[0219] In addition, the threshold voltage of the transmission thyristor T3 is -6 V, and the threshold voltages of the transmission thyristors T5, T7, T9, and T11 are -6.5 V. The voltage applied to the transmission thyristors T3, T5, T7, T9, and T11 becomes -1.5 V obtained by adding 1.7 V, the voltage applied to the VCSEL, to -3.2 V. Therefore, the transmission thyristor T3 and the transmission thyristor T5 are not turned on.

[0220] On the other hand, among the transmission thyristors T with even numbers, the second transmission signal φ2 is “H” (0 V), and the second transmission signal line 73 is “H” (0 V), so they cannot be turned on.

[0221] When the transmission thyristor T1 is turned on, the potential of the gate Gt1 / Gs1 becomes “H” (0 V) which is the potential of the anode of the transmission thyristor T1. And the potential of the gate Gt2 (gate Gs2) becomes -1.5 V, the potential of the gate Gt3 (gate Gs3) becomes -3 V, the potential of the gate Gt4 (gate Gs4) becomes -4.5 V, and the potential of the gates Gt (gates Gl) with numbers 5 or more becomes “L”.

[0222] As a result, the threshold voltage of the set thyristor S1 becomes -1.5 V, the threshold voltages of the transmission thyristor T2 and the set thyristor S2 become -3 V, the threshold voltages of the transmission thyristor T3 and the set thyristor S3 become -4.5 V, the threshold voltages of the transmission thyristor T4 and the set thyristor S4 become -6 V, and the threshold voltages of the transmission thyristors T5 to T12 and the set thyristors S5 to S12 become -6.5 V.

[0223] However, since the first transmission signal line 72 becomes -1.5 V through the on-state transmission thyristor T1, the odd-numbered transmission thyristors T in the off state are not turned on. The second transmission signal line 73 is “H” (0 V), so the even-numbered transmission thyristors T are not turned on. The lighting signal line 75 is “H” (0 V), so none of the VCSELs are lit.

[0224] After just passing time b, the transfer thyristor T1 and the lower diode UD1 are in the conducting state, and the other transfer thyristors T, lower diodes UD, setting thyristors S, and VDSEL are in the off state. Additionally, here, just after time b means the time when, after the change in the potential of the signal at time b causes a change in thyristors and the like, it becomes a constant state.

[0225] (3) Time c

[0226] At time c, the lighting signal φI transitions from “H” (0 V) to “L” (-5 V).

[0227] If the lighting signal φI transitions from “H” to “L”, then via the current limiting resistor RI and the φI terminal, the lighting signal line 75 transitions from “H” (0 V) to “L” (-5 V). In this way, -3.3 V obtained by adding the voltage of 1.7 V applied to the VCSEL is applied to the setting thyristor S1, and the setting thyristor S1 with a threshold voltage of -1.5 V is turned on, and the VCSEL1 lights up. As a result, the potential of the lighting signal line 75 becomes a potential close to -3.2 V. Additionally, the threshold voltage of the setting thyristor S2 is -3 V, but the voltage applied to the setting thyristor S2 becomes -1.5 V obtained by adding the voltage of 1.7 V applied to the VCSEL and -3.2 V, so the setting thyristor S2 is not turned on.

[0228] After just passing time c, the transfer thyristor T1, the lower diode UD1, and the setting thyristor S1 are in the conducting state, and the VCSEL1 lights up.

[0229] (4) Time d

[0230] At time d, the lighting signal φI transitions from “L” (-5 V) to “H” (0 V).

[0231] If the lighting signal φI transitions from “L” to “H”, then via the current limiting resistor RI and the φI terminal, the potential of the lighting signal line 75 transitions from -3.2 V to “H” (0 V). In this way, both the cathode of the setting thyristor S1 and the anode of the VCSEL1 become “H”, so the setting thyristor S1 is turned off, and the VCSEL1 does not light up. The lighting period of the VCSEL1 is the period during which the lighting signal φI is “L” from time c when the lighting signal φI transitions from “H” to “L” to time d when the lighting signal φI transitions from “L” to “H”.

[0232] After just passing time d, the transfer thyristor T1 is in the conducting state.

[0233] (5) Time e

[0234] At time e, the second transmission signal φ2 transitions from "H" (0V) to "L" (-5V). Here, the period T(1) for controlling the lighting of VCSEL1 ends, and the period T(2) for controlling the lighting of VCSEL2 begins.

[0235] If the second transmission signal φ2 transitions from "H" to "L", then via the φ2 terminal, the potential of the second transmission signal line 73 transitions from "H" to "L". As described above, the threshold voltage of the transmission thyristor T2 becomes -3V, so it will be turned on. At this time, current also flows through the lower diode UD2 and transitions from the off state to the on state.

[0236] As a result, the potential of the gate Gt2 (gate Gs2) becomes "H" (0V), the potential of the gate Gt3 (gate Gs3) becomes -1.5V, the potential of the gate Gt4 (gate Gs4) becomes -3V, the potential of the gate Gt5 (gate Gs5) becomes -4.5V, and the potentials of the gates Gt6 (gate Gs6) to Gt12 (gate Gs12) become -5V.

[0237] Just after time e, the transmission thyristors T1, T2, the lower diodes UD1, UD2 are in the on state.

[0238] (6) Time f

[0239] At time f, the first transmission signal φ1 transitions from "L" (-5V) to "H" (0V).

[0240] If the first transmission signal φ1 transitions from "L" to "H", then via the φ1 terminal, the potential of the first transmission signal line 72 transitions from "L" to "H". In this way, both the anode and cathode of the conducting transmission thyristor T1 become "H", so it is turned off. At this time, both the anode and cathode of the lower diode UD1 also become "H", so it transitions from the on state to the off state.

[0241] In this way, the potential of the gate Gt1 (gate Gs1) changes via the power supply line resistor Rg1 towards the power supply potential Vga ("L" (-5V)) of the power supply line 71. As a result, the coupling diode D1 is in a state where a potential is applied in a direction where current does not flow (reverse bias). Therefore, the fact that the gate Gt2 (gate Gs2) is "H" (0V) has no effect on the gate Gt1 (gate Gs1). That is, the transmission thyristor T with a gate Gt connected by a coupling diode D with reverse bias will not be turned on even if the threshold voltage becomes -6.5V and the first transmission signal φ1 or the second transmission signal φ2 becomes "L" (-5V).

[0242] Just after time f, the transmission thyristor T2, the lower diode UD2 are in the on state.

[0243] (7) Others

[0244] At time g, if the lighting signal φI transitions from “H” (0 V) to “L” (-5 V), then similar to VCSEL1 and the set thyristor S1 at time c, the set thyristor S2 is turned on and VCSEL2 lights up (emits light).

[0245] Moreover, at time h, if the lighting signal φI transitions from “L” (-5 V) to “H” (0 V), then similar to VCSEL1 and the set thyristor S1 at time d, the set thyristor S2 is turned off and VCSEL2 goes out.

[0246] Furthermore, at time i, if the first transmission signal φ1 transitions from “H” (0 V) to “L” (-5 V), then similar to the transmission thyristor T1 at time b or the transmission thyristor T2 at time e, the transmission thyristor T3 with a threshold voltage of -3 V is turned on. At time i, the period T(2) for controlling the lighting of VCSEL2 ends and the period T(3) for controlling the lighting of VCSEL3 starts.

[0247] Thereafter, it is a repetition of the content described above.

[0248] In addition, when maintaining the VCSEL in the extinguished (not lit) state without making it light up (emit light), as shown by the lighting signal φI from time j to time k within the period T(4) for controlling the lighting of VCSEL4 as Figure 6 , it is only necessary to maintain the lighting signal φI at “H” (0 V). By setting it in this way, even if the threshold voltage of the set thyristor S4 is -1.5 V, the set thyristor S4 will not be turned on and the VCSEL also remains extinguished (not lit).

[0249] As described above, the gate terminals Gt of the transmission thyristors T are connected to each other through the coupling diodes D. Therefore, if the potential of the gate Gt changes, the potential of the gate Gs connected to the gate Gt whose potential has changed via the forward-biased coupling diode D will change. And the threshold voltage of the transmission thyristor T having the gate whose potential has changed will change. If the threshold voltage is higher than -3.3 V, the transmission thyristor T is turned on at the timing when the first transmission signal φ1 or the second transmission signal φ2 transitions from “H” (0 V) to “L” (-5 V).

[0250] Moreover, since the threshold voltage of the set thyristor S whose gate Gs is connected to the gate Gt of the turned-on transmission thyristor T is -1.5 V, if the lighting signal φI transitions from “H” (0 V) to “L” (-5 V), it will be turned on and the VCSEL connected in series with the set thyristor S will light up (emit light).

[0251] That is, the transmission thyristor T designates the VCSEL to be lit by becoming conductive. The lighting signal φI of "L" (-5V) turns on the setting thyristor S connected in series with the VCSEL to be lit, and lights up the VCSEL. That is, in the light-emitting chip 10, the VCSELs are lit up in sequence by the transmission of the conductive state of the transmission thyristor T.

[0252] In addition, the lighting signal φI of "H" (0V) maintains the setting thyristor S in the off state and maintains the VCSEL in the unlit state. That is, the lighting signal φI sets the lighting / non-lighting of the VCSEL.

[0253] In this way, in the light source device 1 of the present embodiment, there are a plurality of elements (transmission thyristors T1 to T12, setting thyristors S1 to S12, VCSELs 1 to 12, etc.), and the elements that become conductive among the plurality of elements will transition in sequence. Therefore, in the light source device 1 of the present embodiment, through the lighting control performed by the control unit 12, the plurality of transmission thyristors T1 to T12 in the transmission unit 30 of the light-emitting chip 10 individually become conductive. And by the transmission thyristors T1 to T12 becoming conductive to designate the VCSEL to be lit, the setting thyristors S1 to S12 of the plurality of light-emitting partitions 21-1 to 21-12 in the light-emitting unit 20 individually become conductive. And by each setting thyristor S becoming conductive, the VCSEL corresponding to the setting thyristor S is lit up individually.

[0254] Therefore, in the light source device 1 of the present embodiment, the light-emitting partitions 21-1 to 21-12 of the light-emitting unit 20 can emit light individually.

[0255] (3D Sensor 5)

[0256] The 3D sensor 5 has a light-receiving surface that extends along the x and y directions and is arranged with a plurality of light-receiving elements. Although not shown, the light-receiving surface of the 3D sensor 5 is divided into a plurality of light-receiving partitions corresponding to the regions irradiated by the light from the light-emitting partitions 21-1 to 21-12 of the light-emitting unit 20 formed on the light-emitting chip 10. Specifically, the light-receiving surface of the 3D sensor 5 is divided into 12 light-receiving partitions, 6 along the x direction and 2 along the y direction.

[0257] And each light-receiving partition receives the light emitted from the light-emitting partitions 21-1 to 21-12 and reflected by the object, and outputs an electrical signal corresponding to the light-receiving result. The 3D sensor 5 calculates distance information related to the distance from the object based on the electrical signals output from each light-receiving partition and outputs it to the measurement control unit 200 (refer to Figure 1)。Each light-receiving section is independently driven corresponding to the light-emitting operation of the light-emitting sections 21-1 to 21-12 to perform a light-receiving operation.

[0258] (Function played by the planar shape of the transmission section 30)

[0259] In the light-emitting chip 10 of the present embodiment, as described above, the transmission section 30 is separately arranged at two places on the substrate 80.

[0260] Here, in the light-emitting chip 10 having a plurality of light-emitting sections 21, when the transmission section 30 is arranged at one place on the substrate 80, the portions where the distance from the transmission section 30 to the light-emitting section 21 becomes long may increase. For example, in the case where the light-emitting section 20 has 12 light-emitting sections 21-1 to 21-12 as shown in Figure 3 If the transmission section 30 is arranged at one place on the +y direction side of the light-emitting section 20, the distance from the transmission section 30 to the light-emitting sections 21-7 to 21-12 is longer than the distance from the transmission section 30 to the light-emitting sections 21-1 to 21-6.

[0261] Moreover, if the distance from the transmission section 30 to the light-emitting section 21 becomes long, the signal lines 41 connecting the transmission section 30 and each light-emitting section 21 tend to become long.

[0262] In contrast, in the light-emitting chip 10 of the present embodiment, the transmission section 30 includes a first transmission section 30A arranged on the +y direction side of the light-emitting section 20 on the substrate 80 and a second transmission section 30B arranged on the -y direction side of the light-emitting section 20.

[0263] Thereby, in the light-emitting chip 10 of the present embodiment, compared with the case where the transmission section 30 is arranged at one place on the substrate 80, an increase in the portions where the distance from the transmission section 30 to the light-emitting section 21 becomes long can be suppressed.

[0264] Moreover, the first transmission section 30A is connected to the light-emitting sections 21-1 to 21-6 of the light-emitting section group 21A located at the position on the +y direction side in the light-emitting section 20 on the substrate 80. And the second transmission section 30B is connected to the light-emitting sections 21-7 to 21-12 of the light-emitting section group 21B located at the position on the -y direction side in the light-emitting section 20 on the substrate 80.

[0265] Thereby, in the light-emitting chip 10 of the present embodiment, compared with the case where the transmission section 30 is arranged at one place on the substrate 80, an increase in the length of the signal lines 41 connecting the transmission section 30 and each light-emitting section 21 can be suppressed.

[0266] Moreover, the signal lines 41 do not need to be arranged between the respective light-emitting sections 21 in order to connect the transmission section 30 and each light-emitting section 21. In this case, the structure of the light-emitting chip 10 or the manufacturing process of the light-emitting chip 10 can be simplified.

[0267] In addition, in the above-described light-emitting unit 20, two light-emitting sections 21 are arranged along the y direction, but the arrangement of the light-emitting sections 21 is not limited thereto. In the light-emitting unit 20, three or more light-emitting sections 21 may be arranged along the y direction. Even when three or more light-emitting sections 21 are arranged along the y direction, as long as it is the same as in the present embodiment, the light-emitting section 21 on the +y direction side among the plurality of light-emitting sections 21 is connected to the first transmission section 30A, and the light-emitting section 21 on the -y direction side is connected to the second transmission section 30B.

[0268] When an odd number of light-emitting sections 21 are arranged along the y direction and there is a light-emitting section 21 whose distance from the first transmission section 30A is equal to the distance from the second transmission section 30B, this light-emitting section 21 may be connected to either the first transmission section 30A or the second transmission section 30B. For example, as long as the number of light-emitting sections 21 connected to the first transmission section 30A and the number of light-emitting sections 21 connected to the second transmission section 30B are made to be about the same.

[0269] Moreover, in the above-described light-emitting unit 20, the light-emitting sections 21 belonging to the same light-emitting section groups 21A, 21B are arranged side by side, but it is not limited thereto. The light-emitting sections 21 belonging to the same light-emitting section groups 21A, 21B may also be arranged at separated positions on the substrate 80. For example, the light-emitting sections 21 belonging to the light-emitting section group 21B may be arranged between the light-emitting sections 21 belonging to the light-emitting section group 21A.

[0270] Moreover, in the above-described embodiment, the first transmission section 30A and the second transmission section 30B of the transmission section 30 are connected. And the control unit 12 supplies the common transmission signals φ1, φ2 to the first transmission section 30A and the second transmission section 30B, and sequentially transmits the conduction state to the transmission thyristors T1 to T6 of the first transmission section 30A and the transmission thyristors T7 to T12 of the second transmission section 30B.

[0271] However, the first transmission section 30A and the second transmission section 30B of the transmission section 30 arranged at separated positions on the substrate 80 may not be connected. Incidentally, transmission signals may be separately supplied to the first transmission section 30A and the second transmission section 30B, and the conduction state may be separately transmitted to the transmission thyristors T1 to T6 of the first transmission section 30A and the transmission thyristors T7 to T12 of the second transmission section 30B.

[0272] On the other hand, from the viewpoint of controlling the lighting / non-lighting of the light-emitting sections 21-1 to 21-6 of the light-emitting section group 21A connected to the first transmission section 30A and the light-emitting sections 21-7 to 21-12 of the light-emitting section group 21B connected to the second transmission section 30B in a linked manner, for example, it is preferable that the first transmission section 30A is connected to the second transmission section 30B, and a common transmission signal φ1, φ2 is supplied to the first transmission section 30A and the second transmission section 30B. In this case, for example, it is possible to suppress the accidental simultaneous lighting of the light-emitting sections 21-1 to 21-6 belonging to the light-emitting section group 21A and the light-emitting sections 21-7 to 21-12 belonging to the light-emitting section group 21B.

[0273] [Embodiment 2]

[0274] Next, Embodiment 2 of the present invention will be described.

[0275] (Light-emitting chip 10)

[0276] Figure 7 is a diagram showing the planar shape of the light-emitting chip 10 to which Embodiment 2 is applied, and is a top view of the light-emitting chip 10 as viewed from the light-emitting side. In Figure 7 , the right direction of the paper surface is set as the +x direction, the upward direction is set as the +y direction, the front side of the paper surface is set as the +z direction, and the opposite directions are set as -x, -y, -z directions.

[0277] In Embodiment 2, the same reference numerals are used for the same structures as in Embodiment 1, and the detailed description thereof is omitted here.

[0278] Similar to Embodiment 1, the light-emitting chip 10 of Embodiment 2 includes a light-emitting section 20, a transmission section 30 (refer to Figure 2 ), and a connection section 40. In addition, the light-emitting chip 10 includes a φ1 terminal, a φ2 terminal, a Vga terminal, a φI terminal, and a Vsub terminal.

[0279] The light-emitting section 20 has a plurality of light-emitting sections 22, and each of the plurality of light-emitting sections 22 includes at least one VCSEL. The light-emitting section 20 has a total of 12 light-emitting sections 22, 6 along the x direction and 2 along the y direction. Here, when distinguishing each light-emitting section 22, the 12 light-emitting sections 22 are referred to as light-emitting sections 22-1 to 22-12.

[0280] In the light-emitting section 20, the 6 light-emitting sections 22-1 to 22-6 are arranged in a manner of being sequentially arranged from the -x direction side to the +x direction side. Hereinafter, the light-emitting sections 22-1 to 22-6 may be collectively referred to as the light-emitting section group 22A. In the present embodiment, the light-emitting sections 22-1 to 22-6 are an example of the first light-emitting section, and the light-emitting section group 22A is an example of the first light-emitting section group.

[0281] Further, in the light-emitting unit 20, six light-emitting sections 22-7 to 22-12 are arranged in order from the +x direction side to the -x direction side. Hereinafter, the light-emitting sections 22-7 to 22-12 may be collectively referred to as a light-emitting section group 22B. In the present embodiment, the light-emitting sections 22-7 to 22-12 are an example of the second light-emitting section, and the light-emitting section group 22B is an example of the second light-emitting section group.

[0282] The light-emitting section group 22A and the light-emitting section group 22B are arranged in order from the +y direction side to the -y direction side. Incidentally, the light-emitting sections 22-1, 22-2, 22-3, 22-4, 22-5, 22-6 belonging to the light-emitting section group 22A are arranged in a manner that they are arranged along the +y direction with respect to the light-emitting sections 22-12, 22-11, 22-10, 22-9, 22-8, 22-7 belonging to the light-emitting section group 22B.

[0283] Further, similar to the first embodiment, the light-emitting unit 20 includes twelve setting thyristors S1 to S12. Each setting thyristor S is connected in series with the VCSEL of the light-emitting section 22 having the same number. Incidentally, the setting thyristors S1 to S12 are stacked on the VCSELs 1 to 12 of the light-emitting sections 22-1 to 22-12 having the same number. That is, each light-emitting section 22 includes a setting thyristor S and a VCSEL.

[0284] In the light-emitting unit 20 of the second embodiment, the planar shapes of the light-emitting sections 22-1 to 22-6 belonging to the light-emitting section group 22A are different from the planar shapes of the light-emitting sections 22-7 to 22-12 belonging to the light-emitting section group 22B.

[0285] Specifically, in the light-emitting unit 20 of the present embodiment, the area of the light-emitting sections 22-1 to 22-6 belonging to the light-emitting section group 22A as viewed from the +z direction side is smaller than the area of the light-emitting sections 22-7 to 22-12 belonging to the light-emitting section group 22B as viewed from the +z direction side. And when the same amount of power is supplied to the light-emitting sections 22-1 to 22-12, the amount of light emitted from the light-emitting sections 22-1 to 22-6 belonging to the light-emitting section group 22A of the light-emitting unit 20 is smaller than the amount of light emitted from the light-emitting sections 22-7 to 22-12 belonging to the light-emitting section group 22B.

[0286] Further, the transmission unit 30 is driven to transmit the conduction state in sequence, and switches each of the light-emitting sections 22-1 to 22-12 of the light-emitting unit 20 between the light-emitting state and the non-light-emitting state.

[0287] Similar to Embodiment 1, the transmission unit 30 includes transmission thyristors T1 to T12, lower diodes UD1 to UD12, coupling diodes D1 to D11, power supply line resistors Rg1 to Rg12, a startup diode SD, and current limiting resistors R1 and R2 provided on the substrate 80.

[0288] Also, in the light-emitting chip 10 of Embodiment 2, similar to Embodiment 1, a first transmission unit 30A of the transmission unit 30, which includes transmission thyristors T1 to T6, lower diodes UD1 to UD6, coupling diodes D1 to D6, power supply line resistors Rg1 to Rg6, a startup diode SD, and a current limiting resistor R1, and a second transmission unit 30B, which includes transmission thyristors T7 to T12, lower diodes UD7 to UD12, coupling diodes D7 to D11, power supply line resistors Rg7 to Rg12, and a current limiting resistor R2, are separately arranged at positions facing each other with the light-emitting unit 20 interposed therebetween.

[0289] (Optical system 11)

[0290] Figure 8 and Figure 9 are diagrams for explaining the relationship between the light-emitting chip 10 and the optical system 11 of the present embodiment. In Figure 8 , the left direction of the paper surface is set as the +x direction, the front side of the paper surface is set as the +y direction, the upper direction of the paper surface is set as the +z direction, and the opposite directions are set as -x, -y, and -z directions, respectively. And in Figure 9 , the front side of the paper surface is set as the +x direction, the right direction is set as the +y direction, the upper direction is set as the +z direction, and the opposite directions are set as -x, -y, and -z directions, respectively.

[0291] In Figure 8 and Figure 9 , the irradiation ranges of the light emitted from the light-emitting partitions 22-1 to 22-12 (refer to Figure 7 ) are shown by symbols 501 to 512, respectively. Hereinafter, the irradiation ranges of the light emitted from the light-emitting partitions 22-1 to 22-12 may be sometimes referred to as irradiation ranges 501 to 512, respectively.

[0292] In addition, in Figure 8 , the irradiation range 501 / 512 indicates that the irradiation range 501 overlaps with the irradiation range 512 when viewed from the +y direction side. The same applies to the irradiation ranges 502 to 511. And in Figure 9 , the irradiation ranges 501 to 506 indicate that the irradiation ranges 501, 502, 503, 504, 505, and 506 overlap when viewed from the +x direction side. The same applies to the irradiation ranges 507 to 512.

[0293] In Figure 8 and Figure 9In this case, an irradiation surface 500 is shown at a certain distance in the +z direction orthogonal to the +z direction, which is the direction in which the light-emitting unit 20 of the light-emitting chip 10 emits light, and is irradiated with light in irradiation ranges 501 to 512. The irradiation surface 500 extends in the x direction and the y direction at a certain distance in the +z direction.

[0294] As Figure 8 and Figure 9 shown, the optical system 11 is arranged on the +z direction side with respect to the light-emitting chip 10. Further, as the optical system 11 moves toward the +z direction, the irradiation range of the light emitted from each light-emitting partition 22 (refer to Figure 7 ) in the light-emitting unit 20 of the light-emitting chip 10 expands.

[0295] The degree to which the optical system 11 expands the irradiation range of the light emitted from each light-emitting partition 22 of the light-emitting unit 20 is different in the x direction and the y direction. Hereinafter, the degree to which the optical system 11 expands the irradiation range of the light is referred to as the diffusivity of the optical system 11 with respect to the light.

[0296] In the present embodiment, in the optical system 11, the diffusivity of the light emitted from each light-emitting partition 22 of the light-emitting unit 20 in the x direction is greater than the diffusivity in the y direction.

[0297] Further, the optical system 11 preferably diffuses the light from each light-emitting partition 22 such that the irradiation range of the light of one light-emitting partition 22 belonging to the light-emitting partition group 22A overlaps with the irradiation range of the light of another light-emitting partition 22 belonging to the light-emitting partition group 22B and arranged along the -y direction with respect to the one light-emitting partition 22 on the irradiation surface 500.

[0298] By overlapping the irradiation range of the light of one light-emitting partition 22 belonging to the light-emitting partition group 22A with the irradiation range of the light of another light-emitting partition 22 belonging to the light-emitting partition group 22B and arranged along the -y direction with respect to the one light-emitting partition 22, it is possible to irradiate the same region on the irradiation surface 500 with the light from the one light-emitting partition 22 and the other light-emitting partition 22. In this case, depending on the size of the object present on the irradiation surface 500, the possibility of irradiating the same object with the light from the one light-emitting partition 22 and the other light-emitting partition 22 increases.

[0299] Incidentally, the optical system 11 preferably diffuses the light from each light-emitting section 22 in the following manner: the overlap of the irradiation ranges of the light from the light-emitting sections 22 arranged in the x direction in the light-emitting section group 22A and the overlap of the irradiation ranges of the light from the light-emitting sections 22 arranged in the x direction in the light-emitting section group 22B are made smaller than the overlap of the irradiation range of the light from one light-emitting section 22 belonging to the light-emitting section group 22A and the irradiation range of the light from another light-emitting section 22 belonging to the light-emitting section group 22B and arranged along the -y direction with respect to the one light-emitting section 22.

[0300] In this case, the optical system 11 preferably exerts an optical effect on the light emitted from each light-emitting section 22 of the light-emitting unit 20 in the x direction and does not exert an optical effect thereon in the y direction.

[0301] In addition, in the present embodiment, for example, when the light-emitting section 22-1 of the light-emitting section group 22A is taken as one light-emitting section 22, the light-emitting section 22-12 arranged along the -y direction with respect to the light-emitting section 22-1 corresponds to another light-emitting section 22 of the light-emitting section group 22B.

[0302] In the following description, another light-emitting section 22 belonging to the light-emitting section group 22B and arranged along the -y direction with respect to one light-emitting section 22 may be referred to as another light-emitting section 22 belonging to the light-emitting section group 22B.

[0303] Here, when the optical system 11 does not exert an optical effect in the y direction, the light from each light-emitting section 22 is respectively expanded due to the diffusion of the original properties, and on the irradiation surface 500 spaced 100 mm from the optical system 11 in the +z direction, the overlap of the illuminance distribution in the y direction of the light emitted from one light-emitting section 22 belonging to the light-emitting section group 22A and the illuminance distribution in the y direction of the light emitted from another light-emitting section 22 belonging to the light-emitting section group 22B is 80% or more.

[0304] Figure 10 It is a diagram showing an example of the illuminance distribution of one light-emitting section 22 belonging to the light-emitting section group 22A and the illuminance distribution of another light-emitting section 22 belonging to the light-emitting section group 22B.

[0305] In Figure 10 the horizontal axis represents the position in the y direction on the irradiation surface 500, and the vertical axis represents the normalized illuminance (normalized illuminance).

[0306] The illuminance distributions of one light-emitting section 22 belonging to the light-emitting section group 22A and another light-emitting section 22 belonging to the light-emitting section group 22B are normalized such that the peak intensity, which is the maximum value of the illuminance, becomes 1. Further, in the illuminance distributions of one light-emitting section 22 belonging to the light-emitting section group 22A and another light-emitting section 22 belonging to the light-emitting section group 22B, the width in the y direction of the region where the illuminance becomes 1 / e of the peak intensity is set as the irradiation width W1. Furthermore, the region where the illuminance becomes 1 / e of the peak intensity in the illuminance distribution of one light-emitting section 22 belonging to the light-emitting section group 22A and the region where the illuminance becomes 1 / e of the peak intensity in the illuminance distribution of another light-emitting section 22 belonging to the light-emitting section group 22B 2 The width in the y direction of the overlapping region is set as the overlapping width W2. In this case, the overlap of the illuminance distribution of one light-emitting section 22 of the light-emitting section group 22A and the illuminance distribution of another light-emitting section 22 of the light-emitting section group 22B is obtained by the following formula (1). 2 The width in the y direction of the overlapping region is set as the overlapping width W2. In this case, the overlap of the illuminance distribution of one light-emitting section 22 of the light-emitting section group 22A and the illuminance distribution of another light-emitting section 22 of the light-emitting section group 22B is obtained by the following formula (1). 2 (Overlapping width W2 / Irradiation width W1) × 100 (%)... (1)

[0307] As the optical system 11 used in the present embodiment, for example, it may be a single optical component that diffuses the light emitted from the plurality of light-emitting sections 22 of the light-emitting unit 20, or may be a plurality of optical components provided individually for each light-emitting section 22 to diffuse the light emitted from each light-emitting section 22.

[0308] (Overlapping width W2 / Irradiation width W1) × 100 (%)... (1)

[0309] As the optical system 11 used in the present embodiment, for example, it may be a single optical component that diffuses the light emitted from the plurality of light-emitting sections 22 of the light-emitting unit 20, or may be a plurality of optical components provided individually for each light-emitting section 22 to diffuse the light emitted from each light-emitting section 22.

[0310] Figure 11 FIG. is an example of an irradiation surface 500 irradiated with the light emitted from the light-emitting sections 22-1 to 22-12 of the light-emitting unit 20. In Figure 11 , the left direction of the paper surface is set as the +x direction, the upper direction is set as the +y direction, the back side of the paper surface is set as the +z direction, and the opposite directions are set as the -x, -y, and -z directions, respectively.

[0311] On the irradiation surface 500, by diffusing the light emitted from the light-emitting sections 22-1 to 22-12 of the light-emitting unit 20 using the optical system 11 described above, the irradiation range of the light from one light-emitting section 22 belonging to the light-emitting section group 22A overlaps with the irradiation range of the light from another light-emitting section 22 belonging to the light-emitting section group 22B.

[0312] Specifically, on the irradiation surface 500, the irradiation range 501 of the light from the light-emitting section 22-1 overlaps with the irradiation range 512 of the light from the light-emitting section 22-12 arranged along the -y direction with respect to the light-emitting section 22-1. Similarly, on the irradiation surface 500, the irradiation range 502 of the light from the light-emitting section 22-2 overlaps with the irradiation range 511 of the light from the light-emitting section 22-11 arranged along the -y direction with respect to the light-emitting section 22-2. Further, on the irradiation surface 500, the irradiation range 503 of the light from the light-emitting section 22-3 overlaps with the irradiation range 510 of the light from the light-emitting section 22-10 arranged along the -y direction with respect to the light-emitting section 22-3. Further, on the irradiation surface 500, the irradiation range 504 of the light from the light-emitting section 22-4 overlaps with the irradiation range 509 of the light from the light-emitting section 22-9 arranged along the -y direction with respect to the light-emitting section 22-4. Further, on the irradiation surface 500, the irradiation range 505 of the light from the light-emitting section 22-5 overlaps with the irradiation range 508 of the light from the light-emitting section 22-8 arranged along the -y direction with respect to the light-emitting section 22-5. Further, on the irradiation surface 500, the irradiation range 506 of the light from the light-emitting section 22-6 overlaps with the irradiation range 507 of the light from the light-emitting section 22-7 arranged along the -y direction with respect to the light-emitting section 22-6.

[0313] Accordingly, the irradiation surface 500 is divided into six irradiation sections P1 to P6 arranged from the -x direction to the +x direction. The irradiation section P1 is the area irradiated by the light from the light-emitting section 22-1 and the light from the light-emitting section 22-12. The irradiation section P2 is the area irradiated by the light from the light-emitting section 22-2 and the light from the light-emitting section 22-11. The irradiation section P3 is the area irradiated by the light from the light-emitting section 22-3 and the light from the light-emitting section 22-10. The irradiation section P4 is the area irradiated by the light from the light-emitting section 22-4 and the light from the light-emitting section 22-9. The irradiation section P5 is the area irradiated by the light from the light-emitting section 22-5 and the light from the light-emitting section 22-8. The irradiation section P6 is the area irradiated by the light from the light-emitting section 22-6 and the light from the light-emitting section 22-7.

[0314] (3D sensor 5)

[0315] Similar to the first embodiment, the 3D sensor 5 used in the second embodiment (refer to Figure 1 ) has a light-receiving surface that extends along the x direction and the y direction and on which a plurality of light-receiving elements are arranged. Although not shown, the light-receiving surface of the 3D sensor 5 is divided into a plurality of light-receiving sections corresponding to the irradiation sections P1 to P6 of the irradiation surface 500. Specifically, the light-receiving surface of the 3D sensor 5 is divided into six light-receiving sections arranged along the x direction.

[0316] Moreover, each light-receiving section receives the light emitted from the light-emitting sections 22-1 to 22-12 and reflected by the object in the irradiation sections P1 to P6. Each light-receiving section is independently driven corresponding to the light-emitting operation of the light-emitting sections 22-1 to 22-12 to perform a light-receiving operation.

[0317] (Operation of the light-emitting chip 10)

[0318] Next, the operation of the light-emitting chip 10 will be described.

[0319] In the light source device 1 to which the second embodiment is applied (refer to Figure 1 ), similar to the first embodiment, there are a plurality of elements (transfer thyristors T1 to T12, setting thyristors S1 to S12, VCSELs 1 to 12, etc.), and the elements that become conductive among the plurality of elements will transition in sequence. Thus, in the light source device 1, through the lighting control performed by the control unit 12, the plurality of transfer thyristors T1 to T12 in the transfer section 30 of the light-emitting chip 10 individually become conductive. And, by the transfer thyristors T1 to T12 becoming conductive, the VCSELs designated as the lighting control targets are specified, and the setting thyristors S1 to S12 of the plurality of light-emitting sections 22-1 to 22-12 in the light-emitting section 20 individually become conductive. And, by each setting thyristor S becoming conductive, the VCSEL corresponding to the setting thyristor S lights up individually.

[0320] Thus, in the light source device 1 of the present embodiment, the light-emitting sections 22-1 to 22-12 of the light-emitting section 20 can emit light individually.

[0321] In the light source device 1 of the present embodiment, the control unit 12 performs the lighting control of the light-emitting section 20 as follows: one of the light-emitting sections 22 belonging to the light-emitting section group 22A that irradiates light to each of the irradiation sections P1 to P6 on the irradiation surface 500 and another light-emitting section 22 belonging to the light-emitting section group 22B and arranged along the -y direction with respect to one light-emitting section 22 is made to be in a lighting state, and the other is made to be in an extinguished state. Incidentally, the light source device 1 of the present embodiment performs the lighting control of the light-emitting section 20 as follows: during the transition of the conduction state from the transfer thyristor T1 to the transfer thyristor T12 in the transfer section 30, one of the light-emitting sections 22 belonging to the light-emitting section group 22A that irradiates light to each of the irradiation sections P1 to P6 and another light-emitting section 22 belonging to the light-emitting section group 22B is made to be in a lighting state, and the other is made to be in an extinguished state.

[0322] For example, the control unit 12 performs lighting control as follows: One of the light-emitting sections 22-1 belonging to the light-emitting section group 22A that irradiates light onto the irradiation section P1 of the irradiation surface 500 and the light-emitting section 22-12 belonging to the light-emitting section group 22B and arranged along the -y direction with respect to the light-emitting section 22-1 is made into the lighting state, and the other is made into the extinguished state.

[0323] Here, when the light-emitting section 22 is made into the lighting state, the temperature of the light-emitting section 22 rises due to the heat generation accompanying the light emission of the VCSEL. And when the temperature of the light-emitting section 22 rises, there may be effects such as a decrease in the light output of the VCSEL. The temperature rise of the light-emitting section 22 caused by the heat generation of the VCSEL not only affects the light-emitting section 22 in the lighting state, but sometimes also affects the light-emitting section 22 adjacent to the light-emitting section 22 in the lighting state.

[0324] If the lighting control of the light-emitting unit 20 is performed such that one light-emitting section 22 belonging to the light-emitting section group 22A and another light-emitting section 22 belonging to the light-emitting section group 22B and arranged along the -y direction with respect to one light-emitting section 22 are both made into the lighting state, then the temperature will rise in one light-emitting section 22 and the other light-emitting section 22, and it is easier to have effects such as a decrease in the light amount of the VCSEL.

[0325] In contrast, in the present embodiment, by performing lighting control such that one of one light-emitting section 22 belonging to the light-emitting section group 22A and another light-emitting section 22 belonging to the light-emitting section group 22B is made into the lighting state and the other is made into the extinguished state, the influence caused by the temperature rise of the light-emitting section 22 can be suppressed.

[0326] As described above, the light amount emitted from the light-emitting sections 22-1 to 22-6 belonging to the light-emitting section group 22A is smaller than the light amount emitted from the light-emitting sections 22-7 to 22-12 belonging to the light-emitting section group 22B.

[0327] In the present embodiment, for each of the irradiation sections P1 to P6, by making either one of one light-emitting section 22 belonging to the light-emitting section group 22A and another light-emitting section 22 belonging to the light-emitting section group 22B into the lighting state and making the other into the extinguished state, the magnitude of the light amount irradiated onto each of the irradiation sections P1 to P6 can be selected. Incidentally, when one light-emitting section 22 belonging to the light-emitting section group 22A is made into the lighting state and another light-emitting section 22 belonging to the light-emitting section group 22B is made into the extinguished state, the light amount irradiated onto the corresponding irradiation sections P1 to P6 is smaller than the case where one light-emitting section 22 belonging to the light-emitting section group 22A is made into the extinguished state and another light-emitting section 22 belonging to the light-emitting section group 22B is made into the lighting state.

[0328] The control unit 12 can, for example, determine which one of one light-emitting partition 22 belonging to the light-emitting partition group 22A and another light-emitting partition 22 belonging to the light-emitting partition group 22B is to be in the lit state based on the distance from the light source device 1 to the object in each irradiation partition P1 to P6.

[0329] When the distance from the light source device 1 to the object is relatively short, if the amount of light irradiated onto the object is large, the amount of light reflected by the object and incident on the corresponding light-receiving partition of the 3D sensor 5 is likely to become large. In this case, signal saturation may occur in the light-receiving partition, resulting in an inability to accurately measure the distance to the object.

[0330] The control unit 12 acquires the distance information from the light source device 1 to the object in each irradiation partition P1 to P6 calculated based on the light-receiving result of the 3D sensor 5. Then, the control unit 12 determines in each irradiation partition P1 to P6 whether the distance from the light source device 1 to the object is closer than a preset distance.

[0331] Then, for the irradiation partitions P1 to P6 where the distance from the light source device 1 to the object is closer than the preset distance, the control unit 12 causes one light-emitting partition 22 belonging to the light-emitting partition group 22A to be in the lit state and causes the other light-emitting partition 22 belonging to the light-emitting partition group 22B to be in the extinguished state. And, for the irradiation partitions P1 to P6 where the distance from the light source device 1 to the object is equal to or greater than the preset distance, the control unit 12 causes one light-emitting partition 22 belonging to the light-emitting partition group 22A to be in the extinguished state and causes the other light-emitting partition 22 belonging to the light-emitting partition group 22B to be in the lit state.

[0332] Thereby, signal saturation is less likely to occur in the light-receiving partition of the 3D sensor 5.

[0333] Moreover, the control unit 12 can, for example, also determine which one of one light-emitting partition 22 belonging to the light-emitting partition group 22A and another light-emitting partition 22 belonging to the light-emitting partition group 22B is to be in the lit state based on the amount of light received by the light-receiving partition in the 3D sensor 5.

[0334] Incidentally, when the amount of light received by the light-receiving partition exceeds a preset threshold, the control unit 12 causes one light-emitting partition 22 belonging to the light-emitting partition group 22A to be in the lit state and causes the other light-emitting partition 22 belonging to the light-emitting partition group 22B to be in the extinguished state for the irradiation partitions P1 to P6 corresponding to the light-receiving partition. Further, when the amount of light received by the light-receiving partition is equal to or less than the preset threshold, the control unit 12 causes one light-emitting partition 22 belonging to the light-emitting partition group 22A to be in the extinguished state and causes the other light-emitting partition 22 belonging to the light-emitting partition group 22B to be in the lit state for the irradiation partitions P1 to P6 corresponding to the light-receiving partition. As the threshold for the amount of light received, for example, the amount of light received at which signal saturation occurs in the light-receiving partition can be set.

[0335] Accordingly, signal saturation is less likely to occur in the light-receiving partition of the 3D sensor 5.

[0336] Here, in the above-described embodiment, the case where the light amounts emitted from the light-emitting partition 22 belonging to the light-emitting partition group 22A and the light-emitting partition 22 belonging to the light-emitting partition group 22B are different has been described as an example, but the present invention is not limited thereto. The light amounts emitted from the light-emitting partition 22 belonging to the light-emitting partition group 22A and the light-emitting partition 22 belonging to the light-emitting partition group 22B may be equal to each other.

[0337] Even in this case, by performing lighting control such that one of the one light-emitting partition 22 belonging to the light-emitting partition group 22A and the other light-emitting partition 22 belonging to the light-emitting partition group 22B is in the lit state and the other is in the extinguished state, it is possible to suppress the influence caused by the temperature rise of the light-emitting partition 22.

[0338] When the light amounts emitted from the light-emitting partition 22 belonging to the light-emitting partition group 22A and the light-emitting partition 22 belonging to the light-emitting partition group 22B are equal, the control unit 12 can select which one of the one light-emitting partition 22 belonging to the light-emitting partition group 22A and the other light-emitting partition 22 belonging to the light-emitting partition group 22B is to be in the lit state in a manner that reduces the influence caused by the temperature rise of the light-emitting partition 22.

[0339] For example, consider a case where the light-emitting section 22-1 that irradiates the irradiation section P1 with light is turned on and the light-emitting section 22-12 is turned off among the light-emitting sections 22-1 and 22-12. In this case, the control section 12 only needs to turn off the light-emitting section 22-2 that irradiates the irradiation section P2 adjacent to the irradiation section P1 with light and that is arranged along the +x direction with respect to the light-emitting section 22-1 and is greatly affected by the temperature rise caused by turning on the light-emitting section 22-1 among the light-emitting sections 22-2 and 22-11, and turn on the light-emitting section 22-11 that is less affected by the temperature rise caused by turning on the light-emitting section 22-1.

[0340] As described above, each embodiment of the present invention has been described, but the technical scope of the present invention is not limited to the above embodiments.

[0341] Various changes or structural substitutions within the scope of the technical idea of the present invention are included in the present invention.

[0342] (Supplementary Note)

[0343] (1) A light-emitting device, comprising:

[0344] a substrate;

[0345] a light-emitting section provided on the substrate and having a plurality of light-emitting partitions;

[0346] a first switching section provided on the substrate and switching a first light-emitting partition of the light-emitting section between a light-emitting state and a non-light-emitting state; and

[0347] a second switching section provided on the substrate on a side opposite to the first switching section with the light-emitting section interposed therebetween and switching a second light-emitting partition different from the first light-emitting partition of the light-emitting section between a light-emitting state and a non-light-emitting state.

[0348] (2) The light-emitting device according to (1), wherein

[0349] the first switching section and the second switching section are connected by wiring, and the first light-emitting partition and the second light-emitting partition of the light-emitting section are sequentially switched between a light-emitting state and a non-light-emitting state according to a signal transmitted through the wiring.

[0350] (3) The light-emitting device according to (2), wherein

[0351] the substrate has a rectangular shape having two first sides opposed to each other and two second sides connecting the first sides to each other and opposed to each other,

[0352] The first switching unit is disposed along one of the first sides, the second switching unit is disposed along the other of the first sides, and the wiring is disposed along one of the second sides.

[0353] (4) The light-emitting device according to (3), further comprising terminals,

[0354] The terminals are disposed along the other of the second sides of the substrate and receive power supply to the light-emitting unit.

[0355] (5) The light-emitting device according to any one of (2) to (4), wherein

[0356] The resistance between the first switching unit and the first light-emitting partition and the resistance between the second switching unit and the second light-emitting partition are greater than the resistance of the wiring.

[0357] (6) The light-emitting device according to any one of (1) to (5), wherein

[0358] The light-emitting units are arranged in a two-dimensional shape by arranging a plurality of the light-emitting partitions along a first direction and a second direction intersecting the first direction, and the number of the light-emitting partitions arranged along the first direction is more than the number of the light-emitting partitions arranged along the second direction,

[0359] The first switching unit and the second switching unit are arranged along the first direction.

[0360] (7) The light-emitting device according to (6), wherein

[0361] The first light-emitting partition is arranged along the first direction,

[0362] The second light-emitting partition is arranged along the second direction with respect to each of the first light-emitting partitions,

[0363] The area irradiated with light by one of the first light-emitting partitions overlaps with the area irradiated with light by another of the second light-emitting partitions that is arranged along the second direction with respect to the one light-emitting partition,

[0364] The first switching unit and the second switching unit select any one of the one light-emitting partition and the another light-emitting partition and switch it to a light-emitting state.

[0365] (8) The light-emitting device according to (7), wherein

[0366] The light emission amounts of the first light-emitting partition and the second light-emitting partition are different.

[0367] (9) The light-emitting device according to (7), further comprising an optical system,

[0368] The optical system guides the light emitted from each of the light-emitting partitions in such a manner that there is an overlapping portion between the area irradiated with light by one light-emitting partition of the first light-emitting partition and the area irradiated with light by the other light-emitting partition of the second light-emitting partition.

[0369] In the optical system, the diffusivity of the light emitted from each of the light-emitting partitions in the first direction is greater than the diffusivity in the second direction.

[0370] (10) The light-emitting device according to (7), further comprising an optical system.

[0371] The optical system guides the light emitted from each of the light-emitting partitions in such a manner that there is an overlapping portion between the area irradiated with light by one light-emitting partition of the first light-emitting partition and the area irradiated with light by the other light-emitting partition of the second light-emitting partition.

[0372] The optical system exerts an optical effect on the first direction and does not exert an optical effect on the second direction.

[0373] (11) A measuring device, comprising:

[0374] (1) to (10) any one of the light-emitting devices described above; and

[0375] An acquisition unit that receives the reflected light from the object to be measured irradiated by the light emitted from the light-emitting device and acquires information related to the object to be measured.

[0376] (12) A light-emitting device, comprising:

[0377] A substrate; and

[0378] A light-emitting unit provided on the substrate and having a plurality of light-emitting partitions. The light-emitting unit is arranged two-dimensionally by arranging the plurality of light-emitting partitions along a first direction and a second direction intersecting the first direction. The number of the light-emitting partitions arranged along the first direction is greater than the number of the light-emitting partitions arranged along the second direction.

[0379] The light-emitting device further comprises an optical system that guides the light emitted from the light-emitting partitions.

[0380] In the optical system, the diffusivity of the light emitted from each of the light-emitting partitions in the first direction is greater than the diffusivity in the second direction.

[0381] (13) A light-emitting device, comprising:

[0382] A substrate; and

[0383] A light-emitting unit is provided on the substrate and has a plurality of light-emitting zones. The light-emitting unit is arranged in a two-dimensional manner by arranging a plurality of these light-emitting zones along a first direction and a second direction intersecting the first direction. The number of light-emitting zones arranged along the first direction is greater than the number of light-emitting zones arranged along the second direction.

[0384] The light-emitting device further includes an optical system that guides the light emitted from the light-emitting zones.

[0385] The optical system exerts an optical effect on the first direction and does not exert an optical effect on the second direction.

[0386] (14) A light-emitting device includes:

[0387] A substrate; and

[0388] A light-emitting unit is provided on the substrate and has a plurality of light-emitting zones. The light-emitting unit is arranged in a two-dimensional manner by arranging a plurality of these light-emitting zones along a first direction and a second direction intersecting the first direction. The number of light-emitting zones arranged along the first direction is greater than the number of light-emitting zones arranged along the second direction.

[0389] The light-emitting device further includes an optical system that guides the light emitted from the light-emitting zones.

[0390] The optical system functions in such a way that the region irradiated with light by one of the plurality of light-emitting zones overlaps with the region irradiated with light by another light-emitting zone arranged along the second direction with respect to the one light-emitting zone.

[0391] According to the light-emitting device according to (1), compared with the case where a switching unit for switching a plurality of light-emitting zones between a light-emitting state and a non-light-emitting state is provided at one place on the substrate, the distance from the switching unit to each light-emitting zone can be shortened.

[0392] According to the light-emitting device according to (2), compared with the case where the first switching unit and the second switching unit are not connected, the inadvertent simultaneous lighting of the light-emitting zones connected to the first switching unit and the light-emitting zones connected to the second switching unit can be suppressed.

[0393] According to the light-emitting device according to (3), compared with the case where the wiring is not provided along the second side but is provided on the back surface or the like, the complexity of the wiring can be suppressed.

[0394] According to the light-emitting device according to (4), compared with the case where the terminals are not provided along the other side of the second side, the enlargement of the device in the direction along the first side can be suppressed.

[0395] According to the light-emitting device described in (5), compared with the case where the switching unit is provided at one place on the substrate, the distances between the first switching unit and the second switching unit, which have relatively large resistances, and the light-emitting partitions can be shortened.

[0396] According to the light-emitting device described in (6), compared with the case where the first switching unit and the second switching unit are arranged along the second direction, the distances between each light-emitting partition and the first switching unit or the second switching unit can be shortened.

[0397] According to the light-emitting device described in (7), it is possible to irradiate light from one light-emitting partition and another light-emitting partition to the same area.

[0398] According to the light-emitting device described in (8), it is possible to select the light quantity for irradiation for each area arranged along the first direction.

[0399] According to the light-emitting device described in (9), compared with the case where the diffusion degree of the optical system in the first direction is the same as that in the second direction, it is possible to irradiate light to a similar area in the second direction.

[0400] According to the light-emitting device described in (10), compared with the case where the optical system exerts an optical effect in the second direction, the light is more stable.

[0401] According to the measuring device described in (11), compared with the case where a switching unit for switching a plurality of light-emitting partitions between a light-emitting state and a non-light-emitting state is provided at one place on the substrate, the distances from the switching unit to each light-emitting partition can be shortened.

[0402] According to the light-emitting device described in (12), compared with the case where the diffusion degree of the optical system in the first direction is the same as that in the second direction, it is possible to irradiate light to a similar area in the second direction.

[0403] According to the light-emitting device described in (13), compared with the case where the optical system exerts an optical effect in the second direction, the light is more stable.

[0404] According to the light-emitting device described in (14), it is possible to irradiate light from one light-emitting partition and another light-emitting partition to the same area.

[0405] The above-described embodiments of the present invention are provided for purposes of illustration and description. In addition, the embodiments of the present invention do not comprehensively and exhaustively cover the present invention and do not limit the present invention to the disclosed manner. Obviously, various modifications and variations are obvious to those skilled in the art to which the present invention pertains. This embodiment is selected and described in order to most easily illustrate the principles of the present invention and its applications. Thus, other technicians in this technical field can understand the present invention through various modification examples that are optimized for specific uses assumed to be various embodiments. The scope of the present invention is defined by the above claims and their equivalents.

Claims

1. A light-emitting device, comprising: A substrate; A light-emitting part, disposed on the substrate and having a plurality of light-emitting zones; A first switching part, disposed on the substrate and switching a first light-emitting zone of the light-emitting part between a light-emitting state and a non-light-emitting state; And A second switching part, disposed on the substrate on a side opposite to the light-emitting part with respect to the first switching part and switching a second light-emitting zone different from the first light-emitting zone of the light-emitting part between a light-emitting state and a non-light-emitting state.

2. The light-emitting device according to claim 1, wherein The first switching part and the second switching part are connected by a wiring, and the first light-emitting zone and the second light-emitting zone of the light-emitting part are sequentially switched between a light-emitting state and a non-light-emitting state according to a signal transmitted through the wiring.

3. The light-emitting device according to claim 2, wherein The substrate has a rectangular shape having two first sides facing each other and two second sides connecting the first sides and facing each other, The first switching part is disposed along one of the first sides, the second switching part is disposed along the other of the first sides, and the wiring is disposed along one of the second sides.

4. The light-emitting device according to claim 3, further comprising terminals, The terminals are disposed along the other of the second sides of the substrate and receive power supply to the light-emitting part.

5. The light-emitting device according to any one of claims 2 to 4, wherein The resistance between the first switching part and the first light-emitting zone and the resistance between the second switching part and the second light-emitting zone are greater than the resistance of the wiring.

6. The light-emitting device according to any one of claims 1 to 5, wherein The light-emitting part is arranged in a two-dimensional shape by arranging a plurality of the light-emitting zones along a first direction and a second direction intersecting the first direction, and the number of the light-emitting zones arranged along the first direction is more than the number of the light-emitting zones arranged along the second direction, The first switching part and the second switching part are arranged along the first direction.

7. The light-emitting device according to claim 6, wherein The first light-emitting zone is arranged along the first direction, The second light-emitting zone is arranged along the second direction with respect to each of the first light-emitting zones, A region irradiated with light by one of the first light-emitting zones overlaps with a region irradiated with light by another of the second light-emitting zones arranged along the second direction with respect to the one light-emitting zone, The first switching part and the second switching part select either the one light-emitting zone or the another light-emitting zone and switch it to a light-emitting state.

8. The light-emitting device according to claim 7, wherein The light emission amounts of the first light-emitting zone and the second light-emitting zone are different.

9. The light-emitting device according to claim 7, further comprising an optical system, The optical system guides the light emitted from each of the light-emitting partitions in such a manner that there is an overlapping portion between the area irradiated with light by one light-emitting partition of the first light-emitting partition and the area irradiated with light by the other light-emitting partition of the second light-emitting partition. In the optical system, the diffusivity of the light emitted from each of the light-emitting partitions in the first direction is greater than that in the second direction.

10. The light-emitting device according to claim 7, further comprising an optical system. The optical system guides the light emitted from each of the light-emitting partitions in such a manner that there is an overlapping portion between the area irradiated with light by one light-emitting partition of the first light-emitting partition and the area irradiated with light by the other light-emitting partition of the second light-emitting partition. The optical system exerts an optical effect on the first direction and does not exert an optical effect on the second direction.

11. A measuring device, comprising: The light-emitting device according to any one of claims 1 to 10; and An acquisition unit that receives the reflected light from the object to be measured irradiated by the light emitted from the light-emitting device and acquires information related to the object to be measured.

12. A light-emitting device, comprising: A substrate; and A light-emitting portion provided on the substrate and having a plurality of light-emitting partitions. The light-emitting portion is arranged in a two-dimensional shape by arranging the plurality of light-emitting partitions along a first direction and a second direction intersecting the first direction. The number of the light-emitting partitions arranged along the first direction is greater than the number of the light-emitting partitions arranged along the second direction. The light-emitting device further comprises an optical system that guides the light emitted from the light-emitting partitions. In the optical system, the diffusivity of the light emitted from each of the light-emitting partitions in the first direction is greater than that in the second direction.

13. A light-emitting device, comprising: A substrate; and A light-emitting portion provided on the substrate and having a plurality of light-emitting partitions. The light-emitting portion is arranged in a two-dimensional shape by arranging the plurality of light-emitting partitions along a first direction and a second direction intersecting the first direction. The number of the light-emitting partitions arranged along the first direction is greater than the number of the light-emitting partitions arranged along the second direction. The light-emitting device further comprises an optical system that guides the light emitted from the light-emitting partitions. The optical system exerts an optical effect on the first direction and does not exert an optical effect on the second direction.

14. A light-emitting device, comprising: A substrate; and A light-emitting portion provided on the substrate and having a plurality of light-emitting partitions. The light-emitting portion is arranged in a two-dimensional shape by arranging the plurality of light-emitting partitions along a first direction and a second direction intersecting the first direction. The number of the light-emitting partitions arranged along the first direction is greater than the number of the light-emitting partitions arranged along the second direction. The light-emitting device further comprises an optical system that guides the light emitted from the light-emitting partitions. The optical system functions in such a manner that the area irradiated with light by one of the plurality of light-emitting partitions overlaps with the area irradiated with light by another light-emitting partition arranged along the second direction with respect to the one light-emitting partition.

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