Three-inductor stray capacitance counteracting network, broadband power amplifier, chip and equipment
By using three-inductance parasitic capacitors in differential multi-layer stacking transistors to cancel the network, eliminate the influence of transistor parasitic capacitors, and combine the differential dual stacking structure and transformer to achieve broadband matching, the problems of high output power and high efficiency in the millimeter wave band are solved, expanding the bandwidth of the circuit and reducing the supply voltage requirements.
Patent Information
- Application Number
- CN202510354314.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-25
- Publication Date
- 2025-07-25
AI Technical Summary
The prior art is difficult to achieve high output power and high efficiency power amplifiers in broadband in the millimeter wave band, and existing solutions increase design complexity and chip area, making it difficult to simultaneously optimize bandwidth, output power and efficiency.
A three-inductance parasitic capacitor cancellation network is used, and is set at the intermediate node of the differential multi-layer stacking transistor to eliminate the influence of the equivalent parasitic capacitor of the differential circuit transistor, and reduce signal loss by increasing the impedance of the signal path to the ground, combining the differential dual stacking structure and transformer to achieve broadband matching.
It improves the output power, efficiency and bandwidth of the power amplifier of the wireless communication system, expands the operating frequency and bandwidth of the circuit, reduces the supply voltage requirements, and avoids irreversible effects such as transistor breakdown.