Semiconductor device and method for manufacturing semiconductor device

Abstract

The invention relates to a semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device may include: a first gate structure including first insulating layers and first conductive layers alternately stacked; a second gate structure disposed over or on the first gate structure and including a second insulating layer and a second conductive layer alternately stacked; first supports, each first support including a first portion extending through the first gate structure and having a first width and a second portion extending through the second gate structure and having a second width, the first width being greater than the second width; a second support extending through the first gate structure and the second gate structure and having a third width; a first contact structure extending through the second gate structure between the first supports, the first contact structure electrically connected to the at least one second conductive layer; and a second contact structure extending through the second gate structure and the first gate structure between the second supports, the second contact structure being electrically connected to the at least one first conductive layer.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to an electronic device and a method of manufacturing the same, and more particularly, to a semiconductor device and a method of manufacturing the semiconductor device. Background Art

[0002] The integration degree of a semiconductor device is mainly determined by the area occupied by a unit memory cell. Recently, as the improvement of the integration degree of a semiconductor device having a single-layer memory cell array has reached a limit, three-dimensional semiconductor devices have been proposed, in which memory cells are stacked in multiple layers above a substrate. In addition, in order to improve the operation reliability of these semiconductor devices, various structures and manufacturing methods have been proposed. However, further improvements are needed. Summary of the Invention

[0003] In an embodiment of the present disclosure, a semiconductor device may include: a first gate structure including a first insulating layer and a first conductive layer stacked alternately; a second gate structure disposed above or on the first gate structure and including a second insulating layer and a second conductive layer stacked alternately; a first support, each first support including a first portion extending through the first gate structure and having a first width and a second portion extending through the second gate structure and having a second width, the first width being greater than the second width; a second support extending through the first gate structure and the second gate structure and having a third width; a first contact structure extending through the second gate structure between the first supports and electrically connected to at least one of the second conductive layers; and a second contact structure extending through the second gate structure and the first gate structure between the second supports and electrically connected to at least one of the first conductive layers.

[0004] In an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include the steps of: forming a first stack; forming a first support hole extending through the first stack and having a first width; forming a second support hole extending through the first stack and having a second width smaller than the first width; forming a second stack on the first stack; forming a third support hole through the second stack, the third support hole being connected to the first support hole and having a third width smaller than the first width; forming a fourth support hole through the second stack, the fourth support hole being connected to the second support hole and having a fourth width smaller than the first width; forming a first contact structure extending through the second stack between the third support holes; and forming a second contact structure extending through the second stack and the first stack between the fourth support holes and between the second support holes. Brief Description of the Drawings

[0005] Figure 1 is a diagram showing a semiconductor device according to an embodiment of the present disclosure.

[0006] Figures 2A to 2C is a diagram showing a semiconductor device according to an embodiment of the present disclosure.

[0007] Figures 3A to 3D is a diagram showing a method of manufacturing a semiconductor device according to an embodiment of the present disclosure.

[0008] Figure 4A 、 Figure 5A and Figure 6A 、 Figure 4B 、 Figure 5B and Figure 6B and Figure 6C is a diagram showing a method of manufacturing a semiconductor device according to an embodiment of the present disclosure. Detailed Description

[0009] Various embodiments of the present disclosure relate to a three-dimensional semiconductor device (hereinafter simply referred to as a semiconductor device) having an improved stable structure and improved characteristics, and a method of manufacturing the semiconductor device.

[0010] According to the present technology, a semiconductor device having a stable structure and improved reliability can be provided.

[0011] Hereinafter, various exemplary embodiments according to the present disclosure will be described with reference to the drawings.

[0012] Figure 1 is a diagram showing a semiconductor device according to an embodiment of the present disclosure.

[0013] Referring to Figure 1 , the semiconductor device may include at least one of a gate structure 110G, a first support 120, a second support 130, a first contact structure 140, a second contact structure 150, and an insulating spacer 160.

[0014] The gate structure 110G may include insulating layers 110A and conductive layers 110B that are alternately stacked. The gate structure 110G may include a first gate structure 110G1 and a second gate structure 110G2 disposed above or on the first gate structure 110G1. The first gate structure 110G1 may include a first insulating layer 110A1 and a first conductive layer 110B1 that are alternately stacked. The second gate structure 110G2 may include a second insulating layer 110A2 and a second conductive layer 110B2 that are alternately stacked. The insulating layers 110A may each include an insulating material such as an oxide, and the conductive layers 110B may each include a conductive material such as tungsten, polysilicon, or molybdenum.

[0015] The first support member 120 can extend through the gate structure 110G. The first support member 120 can include a first portion 120P1 and a second portion 120P2. As shown in the embodiment of Figure 1 , the first portion 120P1 and the second portion 120P2 can constitute the entire first support member 120. The first portion 120P1 can extend through the first gate structure 110G1, and the second portion 120P2 can extend through the second gate structure 110G2. The first portion 120P1 and the second portion 120P2 can have different widths. For example, the first portion 120P1 can have a first width W1, the second portion 120P2 can have a second width W2, and the first width W1 can be greater than the second width W2. The width of the first support member 120 at its lower part can be greater than the width at its upper part.

[0016] The first portions 120P1 of the first support member 120 can be spaced apart from each other by a first distance D1, and the second portions 120P2 of the first support member 120 can be spaced apart from each other by a second distance D2. In the shown embodiment, for example, the first distance D1 can be less than the second distance D2. Since the first width W1 of the first portion 120P1 can be greater than the second width W2 of the second portion 120P2, the first distance D1 between the first portions 120P1 can be relatively less than the second distance D2 between the second portions 120P2. The first support members 120 can each include an insulating material such as an oxide.

[0017] The first support member 120 can support the gate structure 110G and can prevent or reduce the bending of the gate structure 110G during the manufacturing process of the semiconductor device. The supporting force of the first support member 120 can be related to the distance between the first support members 120. As the distance between the first support members 120 decreases, the supporting force of the first support member 120 can increase, and as the distance between the first support members 120 increases, the supporting force of the first support member 120 can decrease. Therefore, the supporting force of the first support member 120 can be increased by arranging the first support members 120 at a narrower interval.

[0018] The second support member 130 may extend through the gate structure 110G. For example, the second support member 130 may extend through the first gate structure 110G1 and the second gate structure 110G2. The second support member 130 may have a uniform width along its entire length. The second support member 130 may have a third width W3. In the illustrated embodiment, for example, the third width W3 may be substantially the same as the second width W2. Thus, the third width W3 may be less than the first width W1. The second support members 130 may be spaced apart from each other by a third distance D3. In the illustrated embodiment, for example, the third distance D3 may be substantially the same as the second distance D2. Thus, the third distance D3 may be greater than the first distance D1. The second support members 130 may each include an insulating material such as an oxide. The second support members 130 may support the gate structure 110G and may prevent or reduce bending of the gate structure 110G.

[0019] At least one of the first contact structure 140 and the second contact structure 150 may extend through the gate structure 110G. At least one of the first contact structure 140 and the second contact structure 150 may be electrically connected to at least one conductive layer 110B of the gate structure 110G. For example, the first contact structure 140 may extend through the second gate structure 110G2 between the first support members 120 and may be electrically connected to at least one second conductive layer 110B2. The second contact structure 150 may extend through the first gate structure 110G1 and the second gate structure 110G2 between the second support members 130 and may be electrically connected to at least one first conductive layer 110B1. The first contact structure 140 and the second contact structure 150 may have different heights. For example, the first contact structure 140 may have a first height H1 and the second contact structure 150 may have a second height H2 that is greater than the first height H1. The contact structures 140 and 150 may each include a conductive material such as tungsten.

[0020] When the first contact structure 140 is located between the first support members 120, there are limitations in reducing the distance between the first support members 120. At the height where the first support members 120 and the first contact structure 140 overlap each other, the gate structure 110G may be supported by the first support members 120 and the first contact structure 140. However, at the height where the first support members 120 and the first contact structure 140 do not overlap each other, the distance between the first support members 120 is large, and thus, the gate structure 110G may bend. Therefore, in order to overcome the height-dependent difference in support force, the width of the first support members 120 may be adjusted according to the height. The first support members 120 may be designed to have a relatively small width at a second portion 120P2 that overlaps the first contact structure 140 and a relatively large width at a first portion 120P1 that does not overlap the first contact structure 140. Thereby, it can be ensured that the first contact structure 140 will be located in the space between the first support members 120, and the support force can be increased.

[0021] The insulating spacer 160 may surround the sidewalls of the first contact structure 140 and the second contact structure 150. The insulating spacer 160 may prevent the remaining conductive layers 110B other than the conductive layers 110B1 and 110B2 to which the contact structures 140 and 150 are connected from being electrically connected to the contact structures 140 and 150. The insulating spacers 160 may each include an insulating material such as an oxide.

[0022] According to the above structure, the first portion 120P1 of the first support 120 may have a relatively large first width W1 and may be spaced apart from each other by a relatively small first distance D1. In addition, the second portion 120P2 of the first support 120 may have a relatively small second width W2 and may be spaced apart from each other by a relatively large second distance D2. Accordingly, the first support 120 may ensure the space where the first contact structure 140 is to be disposed and may prevent or reduce the bending of the gate structure 110G.

[0023] Figures 2A to 2C is a diagram showing a semiconductor device according to an embodiment of the present disclosure. Figure 2A is a cross-sectional view, Figure 2B is a plan view including a plan view of the first support 220 taken along line A-A' Figure 2A of. Figure 2C is a plan view including a plan view of the first support 220 taken along line B-B' Figure 2A of. Hereinafter, the content repeated with the previously described content may be omitted.

[0024] Referring to Figures 2A to 2C , the semiconductor device may include at least one of a gate structure 210G, a first support 220, a second support 230, a third support 240, a first contact structure 250, a second contact structure 260, a third contact structure 270, an insulating spacer 280, a channel structure 290, and a slit structure SLS.

[0025] The gate structure 210G may include insulating layers 210A and conductive layers 210B that are alternately stacked. The gate structure 210G may include a first gate structure 210G1, a second gate structure 210G2 disposed above or on the first gate structure 210G1, and a third gate structure 210G3 disposed above the second gate structure 210G2. The first gate structure 210G1 may include first insulating layers 210A1 and first conductive layers 210B1 that are alternately stacked. The second gate structure 210G2 may include second insulating layers 210A2 and second conductive layers 210B2 that are alternately stacked. The third gate structure 210G3 may include third insulating layers 210A3 and third conductive layers 210B3 that are alternately stacked.

[0026] The first support member 220 may extend through the gate structure 210G. The first support member 220 may include a first portion 220P1 extending through the first gate structure 210G1 and the second gate structure 210G2 and a second portion 220P2 extending through the third gate structure 210G3. The first portion 220P1 and the second portion 220P2 may have different widths. For example, the width of the first portion 220P1 may be greater than the width of the second portion 220P2. The width of the first support member 220 at its lower part may be greater than the width at its upper part.

[0027] The second support member 230 may extend through the gate structure 210G. The second support member 230 may include a first portion 230P1 extending through the first gate structure 210G1 and a second portion 230P2 extending through the second gate structure 210G2 and the third gate structure 210G3. The first portion 230P1 and the second portion 230P2 may have different widths. For example, the width of the first portion 230P1 may be greater than the width of the second portion 230P2. The first portion 230P1 of the second support member 230 may have substantially the same width as the first portion 220P1 of the first support member 220. The second portion 230P2 of the second support member 230 may have substantially the same width as the second portion 220P2 of the first support member 220.

[0028] The third support member 240 may extend through the gate structure 210G. For example, the third support member 240 may extend through the first gate structure 210G1, the second gate structure 210G2, and the third gate structure 210G3. The third support member 240 may have a uniform width along its entire length. The third support member 240 may have substantially the same width as the second portion 220P2 of the first support member 220 and the second portion 230P2 of the second support member 230.

[0029] At least one of the contact structures 250, 260, and 270 may extend through the gate structure 210G and be electrically connected to at least one conductive layer 210B of the gate structure 210G. The first contact structure 250 may at least partially extend through the third gate structure 210G3 between the first supports 220 and may be electrically connected to at least one third conductive layer 210B3. The insulating spacer 280 may surround the sidewall of the first contact structure 250 to prevent electrical contact with the remaining third conductive layer 210B3. The second contact structure 260 may extend through the third gate structure 210G3 and partially through the second gate structure 210G2. The second contact structure 260 may extend through the third gate structure 210G3 and partially through the second gate structure 210G2, and may be located between the second supports 230 and be electrically connected to at least one second conductive layer 210B2. The third contact structure 270 may extend through the second gate structure 210G2 and the third gate structure 210G3 and partially through the first gate structure 210G1. The third contact structure 270 may be located between the third supports 240 and may be electrically connected to at least one first conductive layer 210B1.

[0030] For reference, Figure 2A Contact structures 250, 260, and 270 connected to one of the conductive layers 210B1, 210B2, and 210B3 of the gate structures 210G1, 210G2, and 210G3 are shown, but there may be a number of contact structures corresponding to the number of conductive layers 210B of the gate structure 210G. The contact structures may extend through the gate structure 210G between the supports and be respectively connected to the conductive layers 210B. In this case, the contact structure connected to the first conductive layer 210B1 of the first gate structure 210G1 may be located between supports having the shape of the third support 240, the contact structure connected to the second conductive layer 210B2 of the second gate structure 210G2 may be located between supports having the shape of the second support 230, and the contact structure connected to the third conductive layer 210B3 of the third gate structure 210G3 may be located between supports having the shape of the first support 220.

[0031] The supports 220, 230, and 240 may support the gate structure 210G and may prevent or reduce bending of the gate structure 210G. The supports 220, 230, and 240 may respectively ensure that the contact structures 250, 260, and 270 will be located in the spaces between the supports 220, 230, and 240 and may increase the support force for these structures.

[0032] The insulating spacer 280 may surround the sidewalls of the contact structures 250, 260, and 270. The insulating spacer 280 may prevent the remaining conductive layers 210B other than the conductive layers 210B1, 210B2, and 210B3 to which the contact structures 250, 260, and 270 are connected from being electrically connected to the contact structures 250, 260, and 270. Each of the insulating spacers 280 may include an insulating material such as an oxide.

[0033] The channel structure 290 may extend through the gate structure 210G. The channel structure 290 may be arranged in a first direction I and a second direction II. For example, the channel structure 290 may be arranged in a zigzag shape. The channel structure 290 may have a fourth width W4. Referring again to Figure 1 , the fourth width W4 may be smaller than the first width W1 of the first support 120 and / or the third width W3 of the second support 130. Each channel structure 290 may include at least one of a channel layer 290A, a memory layer 290B surrounding the channel layer 290A, and an insulating core 290C located in the channel layer 290A.

[0034] The slit structure SLS may extend through the gate structure 210G. The slit structure SLS may extend along its long dimension in the first direction I and may have a small width in the second direction. The slit structure SLS may have a shape of parallel lines spaced apart from each other in the second direction II. Each slit structure SLS may include at least one of a conductive material, an insulating material, and a semiconductor material.

[0035] According to the above structure, the widths of the supports 220 and 230 at their lower portions may be greater than the widths at their upper portions. The distance between the upper portions of the supports 220 and 230 may be greater than the distance between the lower portions of the supports 220 and 230, and the distance between the lower portions of the supports 220 and 230 may be smaller. Accordingly, the supports 220 and 230 may support the gate structure 210G while ensuring the space in which the contact structures 250 and 260 will be located.

[0036] Figures 3A to 3D is a diagram showing a method of manufacturing a semiconductor device according to an embodiment of the present disclosure. Hereinafter, the content repeated from the previously described content may be omitted.

[0037] Referring to Figure 3A , the first stack 310S1 may be formed by alternately laminating a first material layer 310A1 and a second material layer 310B1. Each of the first material layers 310A1 may include an insulating material such as an oxide. Each of the second material layers 310B1 may include a sacrificial material such as a nitride. Alternatively, each of the second material layers 310B1 may include a conductive material such as tungsten.

[0038] Subsequently, first support holes SH1 extending through the first stack 310S1 may be formed. The first support holes SH1 may each have a first width W1. Second support holes SH2 extending through the first stack 310S1 may also have a second width W2 (in the illustrated embodiment, for example, less than the first width W1). In an embodiment, when the first support holes SH1 are formed, the second support holes SH2 may be formed. In such a case, the support holes SH1 and SH2 having different widths may be formed simultaneously, or may be formed by forming holes of the same size and then selectively enlarging some of the holes.

[0039] Subsequently, a first support sacrificial layer 320S may be formed in the first support holes SH1. A second support sacrificial layer 330S may be formed in the second support holes SH2. When the first support sacrificial layer 320S is formed, the second support sacrificial layer 330S may be formed. In the illustrated embodiment, for example, the first support sacrificial layer 320S and the second support sacrificial layer 330S may each include a material having a high etch selectivity with respect to the first material layer and the second material layer. For example, the support sacrificial layers 320S and 330S may each include a sacrificial material such as carbon, tungsten, or metal nitride.

[0040] Subsequently, a second stack 310S2 may be formed over or on the first stack 310S1. In the illustrated embodiment, the second stack 310S2 is formed on the first stack 310S1. In the illustrated embodiment, for example, the second stack 310S2 may include third material layers 310A2 and fourth material layers 310B2 that are alternately stacked. The third material layers 310A2 may each include an insulating material such as an oxide. The fourth material layers 310B2 may each include a sacrificial material such as a nitride. Alternatively, the fourth material layers 310B2 may each include a conductive material such as tungsten.

[0041] Subsequently, third support holes SH3 connected to the first support holes SH1 may be formed through the second stack 310S2. The first support sacrificial layer 320S may be exposed through the third support holes SH3. The third support holes SH3 may have a third width W3. In the illustrated embodiment, for example, the third width W3 may be less than the first width W1. Thus, the first support holes SH1 have a relatively large first width W1, and thus, a landing margin may be ensured in the process of forming the third support holes SH3 connected to the first support holes SH1.

[0042] A fourth support hole SH4 that connects to the second support hole SH2 may be formed through the second stack 310S2. When forming the third support hole SH3, the fourth support hole SH4 may be formed. The second support sacrificial layer 330S may be exposed through the fourth support hole SH4. The fourth support hole SH4 may have a fourth width W4. In the illustrated embodiment, for example, the fourth width W4 may be substantially the same as the third width W3. The third width W3 or the fourth width W4 may be substantially the same as the second width W2. The third width W3 or the fourth width W4 may be less than the first width W1.

[0043] Referring Figure 3B , a first support 320 may be formed. First, the first support sacrificial layer 320S exposed through the third support hole SH3 may be removed. Subsequently, the first support 320 may be formed in the first support hole SH1 and the third support hole SH3. The width of the first support 320 at its lower portion may be greater than the width at its upper portion. Each of the first supports 320 may include an insulating material such as an oxide.

[0044] A second support 330 may be formed. First, the second support sacrificial layer 330S exposed through the fourth support hole SH4 may be removed. Subsequently, the second support 330 may be formed in the second support hole SH2 and the fourth support hole SH4. The second support 330 may have a uniform width at its upper and lower portions. Each of the second supports 330 may include an insulating material such as an oxide.

[0045] Referring Figure 3C , a first contact hole CTH1 extending through the second stack 310S2 may be formed. For example, the first contact hole CTH1 extending between the first supports 320 and through the second stack 310S2 may be formed. The first contact hole CTH1 may be formed at a height corresponding to the upper portion of the first support 320. The upper portion of the first support 320 has a relatively small width, and thus, at the upper portion of the first support 320, the distance between the first supports 320 may be large, and there may be sufficient space for forming the first contact hole CTH1.

[0046] A second contact hole CTH2 extending through the second stack 310S2 and the first stack 310S1 may be formed. For example, the second contact hole CTH2 extending between the second supports 330 and through the second stack 310S2 and the first stack 310S1 may be formed. When forming the first contact hole CTH1, the second contact hole CTH2 may be formed. However, the embodiments of the present disclosure are not limited thereto, and the second contact hole CTH2 may also be formed after forming the first contact hole CTH1. The first contact hole CTH1 and the second contact hole CTH2 may have different heights. For example, the second contact hole CTH2 may be higher than the first contact hole CTH1.

[0047] Subsequently, an insulating liner 360 may be formed in the first contact hole CTH1 and the second contact hole CTH2. The insulating liner 360 may be conformally formed in the first contact hole CTH1 and the second contact hole CTH2. The insulating liner 360 may include an insulating material such as an oxide.

[0048] Subsequently, a first contact sacrificial layer 340S may be formed in the first contact hole CTH1. A second contact sacrificial layer 350S may be formed in the second contact hole CTH2. When the first contact sacrificial layer 340S is formed, the second contact sacrificial layer 350S may be formed. The first contact sacrificial layer 340S and the second contact sacrificial layer 350S may be formed simultaneously. The contact sacrificial layers 340S and 350S may each include a sacrificial material such as tungsten.

[0049] Referring to Figure 3D , a gate structure 310G may be formed. First, the second material layer 310B1 and the fourth material layer 310B2 of the stacks 310S1 and 310S2 may be removed through a slit (not shown). Subsequently, a fifth material layer 310C may be formed in the region where the second material layer 310B1 and the fourth material layer 310B2 are removed through the slit. Accordingly, a gate structure 310G in which the first material layer 310A1 and the fifth material layer 310C are alternately stacked and the third material layer 310A2 and the fifth material layer 310C are alternately stacked may be formed. In the illustrated embodiment, for example, each of the fifth material layers 310C may include a conductive material such as tungsten. As a reference, when each of the second material layer 310B1 and the fourth material layer 310B2 includes a conductive material, the process of forming the fifth material layer 310C may be omitted.

[0050] In the process of removing the material layers 310B1 and 310B2 of the stacks 310S1 and 310S2 to form the gate structure 310G, the stacks 310S1 and 310S2 may be bent. The supports 320 and 330 may support the stacks 310S1 and 310S2 in the process of forming the gate structure 310G, and may prevent or reduce the bending of the stacks 310S1 and 310S2. The supporting force of the supports 320 and 330 may be related to the distance between the supports 320 and 330. For example, as the distance between the first supports 320 decreases, the supporting force of the first supports 320 may increase, and as the distance between the first supports 320 increases, the supporting force of the first supports 320 may decrease. Accordingly, the width of the first supports 320 at their lower portions is greater than that at their upper portions, and thus, at the lower portions of the first supports 320, the distance between the first supports 320 may be smaller and the supporting force may be greater.

[0051] In addition, when the first contact sacrificial layer 340S is formed between the first support members 320, the second stack 310S2 may be supported by the first support member 320 and the first contact sacrificial layer 340S. When the second contact sacrificial layer 350S is formed between the second support members 330, the first stack 310S1 and the second stack 310S2 may be supported by the second support member 330 and the second contact sacrificial layer 350S.

[0052] Subsequently, the first contact hole CTH1 may be reopened by removing the first contact sacrificial layer 340S. The second contact hole CTH2 may be reopened by removing the second contact sacrificial layer 350S. When the first contact sacrificial layer 340S is removed, the second contact sacrificial layer 350S may be removed.

[0053] Subsequently, by etching the insulating liner 360 formed on the bottom surfaces of the first and second contact holes CTH1 and CTH2, at least one fifth material layer 310C may be exposed through the contact holes CTH1 and CTH2. In the illustrated embodiment, for example, the insulating liner 360 may remain on the sidewalls of the contact holes CTH1 and CTH2 as insulating spacers 360P.

[0054] Subsequently, a first contact structure 340 may be formed in the first contact hole CTH1. When the first contact structure 340 is formed, a second contact structure 350 may be formed in the second contact hole CTH2. In the illustrated embodiment, for example, the contact structures 340 and 350 may be electrically connected to at least one fifth material layer 310C of the gate structure 310G. The contact structures 340 and 350 may each include a conductive material such as tungsten.

[0055] According to the above-described manufacturing method, the third support hole SH3 having a relatively small width may be formed on the first support hole SH1 having a relatively large width. In this case, a landing margin may be secured in the process of forming the third support hole SH3.

[0056] In addition, the first support member 320 may be formed to have a width greater at a lower portion than at an upper portion. In this case, a space where the first contact structure 340 is to be formed may be secured while supporting the stacks 310S1 and 310S2 in a process of forming the gate structure 310G.

[0057] Figure 4A , Figure 5A and Figure 6A , Figure 4B , Figure 5B and Figure 6B as well as Figure 6C 2 is a diagram illustrating a method for manufacturing a semiconductor device according to an embodiment of the present disclosure. Figure 4A , Figure 5A and Figure 6A is a cross-sectional view,Figure 4B is a plan view including a plan view taken along line C-C' of Figure 4A and Figure 5B is a plan view including a plan view taken along line C-C' of Figure 5A and Figure 6B is a plan view including a plan view taken along line C-C' of Figure 6A and Figure 6C is a plan view including a plan view taken along line D-D' of Figure 6A The following may omit the content repeated from the previously described content.

[0058] Referring to Figure 4A and Figure 4B a first stack 410S1 can be formed by alternately laminating a first material layer 410A1 and a second material layer 410B1. In the illustrated embodiment, for example, each of the first material layers 410A1 can include an insulating material such as an oxide, and each of the second material layers 410B1 can include a sacrificial material such as a nitride. Alternatively, each of the second material layers 410B1 can include a conductive material such as tungsten.

[0059] Subsequently, a first channel hole CH1 extending through the first stack 410S1 can be formed. The first channel hole CH1 can have a fifth width W5. A first support hole SH1, a second support hole SH2, and a third support hole SH3 extending through the first stack 410S1 can be formed. When forming the first channel hole CH1, the first support hole SH1, the second support hole SH2, and the third support hole SH3 can be formed.

[0060] The first support hole SH1, the second support hole SH2, and the third support hole SH3 can be formed to have a width substantially the same as that of the first channel hole CH1. For example, the first support hole SH1, the second support hole SH2, and the third support hole SH3 can have the fifth width W5.

[0061] Subsequently, the first support hole SH1, the second support hole SH2, and the third support hole SH3 can be selectively enlarged to have a width greater than the fifth width W5. For example, the first support hole SH1 and the second support hole SH2 can be enlarged to have a first width W1. In the illustrated embodiment, for example, the first width W1 can be greater than the fifth width W5. Additionally, the third support hole SH3 can be enlarged to have a second width W2. In the illustrated embodiment, for example, the second width W2 can be greater than the fifth width W5.

[0062] Various methods can be employed to enlarge the support holes SH1, SH2, and SH3. For example, by selectively exposing the support holes SH1, SH2, and SH3 using a mask pattern, only some of the support holes can be selectively enlarged. By repeatedly performing the process of forming the mask pattern and selectively enlarging the exposed holes, support holes with various widths can be formed. However, embodiments of the present disclosure are not limited thereto. For example, in an embodiment, by etching the stack using a mask pattern including holes with different widths, holes with different widths can be formed simultaneously.

[0063] Subsequently, a sacrificial material can be formed in the first channel hole CH1 and the first support hole SH1, the second support hole SH2, and the third support hole SH3. Accordingly, a first channel sacrificial layer 490S can be formed in the first channel hole CH1, a first support sacrificial layer 420S can be formed in the first support hole SH1, a second support sacrificial layer 430S can be formed in the second support hole SH2, and a third support sacrificial layer 440S can be formed in the third support hole SH3. In the illustrated embodiment, for example, the sacrificial material can include tungsten, carbon, metal nitride, etc.

[0064] Referring to Figure 5A and Figure 5B , a second stack 410S2 can be formed above or on the first stack 410S1. In the illustrated embodiment, for example, the second stack 410S2 can include a third material layer 410A2 and a fourth material layer 410B2 that are alternately stacked. The third material layer 410A2 can include substantially the same material as the first material layer 410A1, and the fourth material layer 410B2 can include substantially the same material as the second material layer 410B1.

[0065] Subsequently, a second channel hole CH2, a fourth support hole SH4, a fifth support hole SH5, and a sixth support hole SH6 can be formed extending through the second stack 410S2. The second channel hole CH2 can expose the first channel sacrificial layer 490S. The fourth support hole SH4 can expose the first support sacrificial layer 420S. The fifth support hole SH5 can expose the second support sacrificial layer 430S. The sixth support hole SH6 can expose the third support sacrificial layer 440S.

[0066] When forming the second channel hole CH2, the fourth support hole SH4, the fifth support hole SH5, and the sixth support hole SH6 can be formed. The widths of the support holes SH4, SH5, and SH6 can be greater than the width of the second channel hole CH2. For example, after the second channel hole CH2 and the support holes SH4, SH5, and SH6 are formed to have the same width, the support holes SH4, SH5, and SH6 can be selectively enlarged. However, the embodiments of the present disclosure are not limited thereto, and support holes SH4, SH5, and SH5 having widths different from the second channel hole CH2 can also be formed using mask patterns with different widths. In the illustrated embodiment, for example, the fourth support hole SH4 can have a first width W1, and the fifth support hole SH5 and the sixth support hole SH6 can each have a second width W2.

[0067] Subsequently, a sacrificial material can be formed in the holes CH2, SH4, SH5, and SH6. For example, a second channel sacrificial layer (not shown) can be formed in the second channel hole CH2. A fourth support sacrificial layer (not shown) can be formed in the fourth support hole SH4. A fifth support sacrificial layer (not shown) can be formed in the fifth support hole SH5. A sixth support sacrificial layer (not shown) can be formed in the sixth support hole SH6.

[0068] Subsequently, a third stack 410S3 can be formed by alternately stacking a fifth material layer 410A3 and a sixth material layer 410B3 on the second stack 410S2. The fifth material layer 410A3 can include substantially the same material as the first material layer 410A1 and the third material layer 410A2, and the sixth material layer 410B3 can include substantially the same material as the second material layer 410B1 and the fourth material layer 410B2.

[0069] Subsequently, a third channel hole CH3, a seventh support hole SH7, an eighth support hole SH8, and a ninth support hole SH9 extending through the third stack 410S3 can be formed. The third channel hole CH3 can expose the second channel sacrificial layer. The seventh support hole SH7 can expose the fourth support sacrificial layer. The eighth support hole SH8 can expose the fifth support sacrificial layer. The ninth support hole SH9 can expose the sixth support sacrificial layer.

[0070] The second channel sacrificial layer and the first channel sacrificial layer 490S can be removed through the third channel hole CH3. Subsequently, a channel structure 490 can be formed in the channel holes CH1, CH2, and CH3. In the illustrated embodiment, for example, the channel structure 490 can include at least one of a channel layer 490A, a memory layer 490B surrounding the channel layer 490A, and an insulating core 490C located in the channel layer 490A.

[0071] The fourth support sacrificial layer and the first support sacrificial layer 420S can be removed through the seventh support hole SH7. Subsequently, a first support member 420 can be formed in the support holes SH1, SH4, and SH7. The fifth support sacrificial layer and the second support sacrificial layer 430S can be removed through the eighth support hole SH8. Subsequently, a second support member 430 can be formed in the support holes SH2, SH5, and SH8. The sixth support sacrificial layer and the third support sacrificial layer 440S can be removed through the ninth support hole SH9. Subsequently, a third support member 440 can be formed in the support holes SH3, SH6, and SH9.

[0072] Referring Figures 6A to 6C , a gate structure 410G including gate structures 410G1, 410G2, and 410G3 can be formed. For example, a slit SL extending through the stacks 410S1, 410S2, and 410S3 can be formed. Subsequently, the second material layer 410B1, the fourth material layer 410B2, and the sixth material layer 410B3 can be removed through the slit SL. Subsequently, a seventh material layer 410C can be formed in the regions where the material layers 410B1, 410B2, and 410B3 are removed. In the illustrated embodiment, for example, the seventh material layer 410C can each include a conductive material such as tungsten. Thus, a gate structure 410G in which the material layers 410A1, 410A2, and 410A3 and the seventh material layer 410C are alternately stacked can be formed. Here, the first gate structure 410G1 can include the first material layer 410A1 and the seventh material layer 410C alternately stacked, the second gate structure 410G2 can include the third material layer 410A2 and the seventh material layer 410C alternately stacked, and the third gate structure 410G3 can include the fifth material layer 410A3 and the seventh material layer 410C alternately stacked. As a reference, when the material layers 410B1, 410B2, and 410B3 each include a conductive material, the process of forming the seventh material layer 410C can be omitted. Subsequently, a slit structure SLS can be formed in the slit SL. The slit structure SLS can each include at least one of a conductive material, an insulating material, and a semiconductor material.

[0073] Contact structures 450, 460, and 470 extending through the gate structure 410G can be formed. Insulating spacers 480 can be disposed above the sidewalls of the contact structures 450, 460, and 470. The first contact structure 450 can be formed between the first support members 420. The second contact structure 460 can be formed between the second support members 430. The third contact structure 470 can be formed between the third support members 440. The contact structures 450, 460, and 470 can have different heights. The contact structures 450, 460, and 470 can be electrically connected to at least one seventh material layer 410C of the gate structure 410G.

[0074] According to the above manufacturing method, after forming channel holes CH1, CH2, and CH3 and support holes SH1, SH2, SH3, SH4, SH5, SH6, SH7, SH8, and SH9 having substantially the same width, the support holes SH1, SH2, SH3, SH4, SH5, SH6, SH7, SH8, and SH9 can be enlarged to have a desired width. Accordingly, support holes SH1, SH2, SH3, SH4, SH5, SH6, SH7, SH8, and SH9 having different widths can be formed.

[0075] Although embodiments according to the technical idea of the present disclosure have been described above with reference to the accompanying drawings, this is only for describing embodiments according to the concept of the present disclosure, and the present disclosure is not limited to the above embodiments. Without departing from the technical idea of the present disclosure defined in the following claims, those skilled in the art to which the present disclosure pertains may make various types of substitutions, modifications, and changes to the embodiments, and these should be interpreted as belonging to the scope of the present disclosure. In addition, these embodiments may be combined to form additional embodiments.

[0076] Cross - reference to related applications

[0077] This application claims priority to Korean Patent Application No. 10 - 2024 - 0009714, filed on January 22, 2024, the entire contents of which are incorporated herein by reference.

Claims

1. A semiconductor device, the semiconductor device comprising: A first gate structure, the first gate structure including a first insulating layer and a first conductive layer that are alternately stacked; A second gate structure, the second gate structure being disposed above or on the first gate structure and including a second insulating layer and a second conductive layer that are alternately stacked; A first support member, each first support member including a first portion extending through the first gate structure and having a first width and a second portion extending through the second gate structure and having a second width, the first width being greater than the second width; A second support member, the second support member extending through the first gate structure and the second gate structure and having a third width; A first contact structure, the first contact structure extending through the second gate structure between the first support members and being electrically connected to at least one of the second conductive layers; And A second contact structure, the second contact structure extending through the second gate structure and the first gate structure between the second support members and being electrically connected to at least one of the first conductive layers.

2. The semiconductor device according to claim 1, wherein, The first portions of the first support members are spaced apart from each other by a first distance, the second portions of the first support members are spaced apart from each other by a second distance, and the first distance is less than the second distance.

3. The semiconductor device according to claim 2, wherein, The second support members are spaced apart from each other by a third distance, and the first distance is less than the third distance.

4. The semiconductor device according to claim 1, wherein, The first width is greater than the third width.

5. The semiconductor device according to claim 1, wherein, The first contact structure has a first height, and the second contact structure has a second height greater than the first height.

6. The semiconductor device according to claim 1, the semiconductor device further comprising a channel structure extending through the first gate structure and the second gate structure.

7. The semiconductor device according to claim 6, wherein, Each of the channel structures has a fourth width, and the fourth width is less than the second width or the third width.

8. The semiconductor device according to claim 1, wherein, The first support member or the second support member is arranged in a first direction or a second direction intersecting the first direction.

9. The semiconductor device according to claim 1, wherein, The first support member or the second support member each includes an oxide.

10. A method of manufacturing a semiconductor device, the manufacturing method comprising the following steps: Forming a first stack; Forming a first support hole extending through the first stack and having a first width; Forming a second support hole extending through the first stack and having a second width less than the first width; Forming a second stack on the first stack; Forming a third support hole through the second stack, the third support hole being connected to the first support hole and having a third width less than the first width; Forming a fourth support hole through the second stack, the fourth support hole being connected to the second support hole and having a fourth width less than the first width; Forming a first contact structure extending through the second stack between the third support holes; And Forming a second contact structure extending through the second stack and the first stack between the fourth support holes and the second support holes.

11. The manufacturing method according to claim 10, wherein, When forming the first support hole, the second support hole is formed.

12. The manufacturing method according to claim 10, wherein, When forming the third support hole, the fourth support hole is formed.

13. The manufacturing method according to claim 10, the manufacturing method further comprising the steps of: Forming a first support member in the first support hole and the third support hole; And Forming a second support member in the second support hole and the fourth support hole.

14. The manufacturing method according to claim 13, wherein, The step of forming the first contact structure includes the steps of: Forming a first contact hole between the first support members; and Forming the first contact structure in the first contact hole.

15. The manufacturing method according to claim 14, wherein, The step of forming the second contact structure includes the steps of: Forming a second contact hole between the second support members; and Forming the second contact structure in the second contact hole.

16. The manufacturing method according to claim 15, wherein, When forming the first contact hole, the second contact hole is formed.

17. The manufacturing method according to claim 10, wherein, The second width is substantially the same as the third width or the fourth width.

18. The manufacturing method according to claim 10, further comprising the following steps: Forming a first channel hole extending through the first stack and having a fifth width.

19. The manufacturing method according to claim 18, wherein, The step of forming the first support hole includes the steps of: When forming the first channel hole having the fifth width, forming the first support hole having the fifth width; and Enlarging the first support hole to have the first width greater than the fifth width.

20. The manufacturing method according to claim 18, wherein, The step of forming the second support hole includes the steps of: When forming the first channel hole having the fifth width, forming the second support hole having the fifth width; and Enlarging the second support hole to have the second width greater than the fifth width.

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