Composite material and preparation method thereof, photoelectric device and display device

Abstract

The invention discloses a composite material and a preparation method thereof, a photoelectric device and a display device, and relates to the technical field of display. The photoelectric device comprises a P-type semiconductor material and a modifier, the modifier comprises one or more of an aromatic compound substituted by a first substituent group and a heteroaromatic compound substituted by the first substituent group, and the first substituent group comprises-NO2 and-OH. According to the composite material provided by the invention, the number of holes and the migration efficiency of the holes can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to a composite material, a preparation method thereof, an optoelectronic device, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to its excellent display performance such as self-luminescence, simple structure, ultra-thin and light, fast response speed, wide viewing angle, low power consumption, and flexible display, OLED has become the mainstream technology in the field of display technology. QLED has the advantages of saturated emission light color and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields, and has become a strong competitor of OLED in recent years.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode. Under the action of an electric field, the holes generated by the anode of the light-emitting diode and the electrons generated by the cathode move, are respectively injected into the hole transport layer and the electron transport layer, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules to finally generate visible light.

[0004] The carrier migration efficiency of the existing carrier functional materials is relatively low and needs to be further improved. Summary of the Invention

[0005] In view of this, the present application provides a composite material, a preparation method thereof, an optoelectronic device, and a display device.

[0006] An embodiment of the present application is implemented as follows. A composite material includes a P-type semiconductor material and a modifier. The modifier includes one or more of an aromatic compound substituted by a first substituent and a heteroaromatic compound substituted by a first substituent. The first substituent includes -NO2 and -OH.

[0007] Correspondingly, an embodiment of the present application further provides a preparation method of a composite material, including:

[0008] Providing a modifier, the modifier includes one or more of an aromatic compound substituted by a first substituent and a heteroaromatic compound substituted by a first substituent. The first substituent includes -NO2 and -OH;

[0009] Providing a dispersion liquid of a P-type semiconductor material, the dispersion liquid of the P-type semiconductor material includes a P-type semiconductor material, and mixing and reacting the dispersion liquid of the P-type semiconductor material and the modifier to obtain a composite material.

[0010] Accordingly, an embodiment of the present application further provides an optoelectronic device, which includes an anode, a hole functional layer, an active layer, and a cathode that are stacked in sequence; the material of the hole functional layer includes the above composite material, or a composite material prepared by the above preparation method.

[0011] Accordingly, an embodiment of the present application further provides a display device, and the display device includes the above optoelectronic device.

[0012] The composite material provided by the present application can increase the number of holes and the hole migration efficiency. Description of the Drawings

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained according to these drawings.

[0014] Figure 1 It is a flowchart of the preparation method of the composite material provided by the embodiment of the present application;

[0015] Figure 2 It is a schematic structural diagram of the optoelectronic device provided by the embodiment of the present application;

[0016] Figure 3 It is a schematic structural diagram of another optoelectronic device provided by the embodiment of the present application.

[0017] Reference Signs:

[0018] Anode 10; Hole functional layer 20; Hole injection layer 21; Hole transport layer 22; Active layer 30; Cathode 40; Electron functional layer 50. Detailed Embodiments

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, rather than all embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0020] In this application, unless otherwise specified, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the attached drawings; while "inner" and "outer" refer to the outline of the device. Additionally, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels without imposing numerical requirements or establishing an order.

[0021] In this application, "and / or" describes the association relationship of associated objects and indicates that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Here, A and B can be singular or plural.

[0022] In this application, "at least one" means one or more, and "a plurality" means two or more. "One or several", "at least one (item) below" or similar expressions refer to any combination of these items, including any combination of single (item) or plural items. For example, "at least one (item) among a, b, or c", or "at least one (item) among a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0023] The various embodiments of this application can exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub - ranges and the individual values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and the individual numbers within that range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0024] In this application, the aromatic compound can be a monocyclic aromatic compound, or a fused - ring aromatic compound, or a polycyclic aromatic compound. For the polycyclic rings, at least one is an aromatic ring system. Suitable examples include but are not limited to: benzene, biphenyl, terphenyl, naphthalene, anthracene, phenanthrene, fluoranthene, triphenylene, pyrene, perylene, tetracene, fluorene, dibenz[a,h]anthracene, acenaphthene, and their derivatives. It can be understood that multiple aromatic compounds can also be interrupted by short non - aromatic units (e.g., <10% non - H atoms, such as C, N, or O atoms), specifically such as acenaphthene, fluorene, or 9,9 - diarylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aromatic compounds.

[0025] In existing optoelectronic devices, the performance of optoelectronic devices is poor due to the imbalance in the injection of electrons and holes. The imbalance between electrons and holes is mainly due to the following reasons: on the one hand, the mobility of P-type hole transport materials is much smaller than that of N-type electron transport materials; on the other hand, the hole functional layer includes a hole injection layer and a hole transport layer, and the energy levels of the hole injection layer and the hole transport layer differ greatly, making hole injection difficult. The imbalance between electrons and holes hinders the improvement of the optoelectronic performance of optoelectronic devices, and the excessive accumulation of electrons will also increase the probability of non-radiative recombination, causing exciton quenching and reducing the stability and lifespan of optoelectronic devices.

[0026] The technical solution of this application is as follows:

[0027] In a first aspect, embodiments of this application provide a composite material, which is mainly used for preparing a P-type semiconductor thin film, such as a hole functional thin film. The composite material includes a P-type semiconductor material and a modifier. The modifier includes one or several of an aromatic compound substituted by a first substituent and a heteroaromatic compound substituted by a first substituent. The first substituent includes -NO2 (nitro) and -OH (hydroxyl).

[0028] In the composite material provided by this application, charge transfer will occur between the P-type semiconductor material and the modifier. Under the excitation of the external electric field energy, the P-type semiconductor material will transfer electrons to the modifier, thereby increasing the number of holes and the hole migration efficiency.

[0029] In some embodiments, one or more of the -NO2 in the first substituent, for example, can be 1, 2, 3, etc. Nitro can effectively receive the electrons provided by the P-type semiconductor material and promote the number of holes in the P-type semiconductor material.

[0030] Correspondingly, in some embodiments, one or more of the -OH in the first substituent, for example, can be 1, 2, 3, etc. When the composite material is applied to the hole functional thin film in an optoelectronic device, the hydroxyl group is beneficial to passivate the defects of quantum dots in the light-emitting layer of the optoelectronic device and effectively improve the interfacial contact between the hole functional thin film and the light-emitting layer.

[0031] In some embodiments, the substituent of the aromatic compound and / or the heteroaromatic compound further includes a second substituent, and the second substituent includes an electron-withdrawing group.

[0032] Furthermore, the electron-withdrawing group includes one or several of -F, -Cl, -Br, -I, -CN, -SO3H, -CHO, -COOH. The electron-withdrawing group is beneficial to further increase the number of holes.

[0033] In some embodiments, the aromatic compound includes one or more of benzene, biphenyl, terphenyl, naphthalene, anthracene, phenanthrene, fluorene, spirobifluorene.

[0034] In some embodiments, the heteroatoms in the heteroaromatic compound include one or more of P, N, S, O, Si.

[0035] In some embodiments, the heteroaromatic compound includes one or more of carbazole, thiophene, furan, pyrrole, pyridine, benzocarbazole, benzofuran, benzothiophene, benzopyrrole. In some embodiments, the modifier includes one or more of trinitrophenol, dinitrophenol, o-nitrophenol, m-nitrophenol, p-nitrophenol, dinitroresorcinol, 2,6-dichloro-4-nitrophenol. The benzene ring structure in the modifier has a conjugated system, can share electrons, attract electrons on other groups through the sharing of electron clouds, and further increase the number of holes, improve the hole migration efficiency. And -OH is an electron-donating group, -NO2 is an electron-withdrawing group, and there is also a certain steric hindrance in the benzene ring structure, which promotes -OH and -NO2 to play their beneficial effects respectively. In addition, the structure of the modifier is simple, easy to synthesize, and has a wide source, which is beneficial to large-scale popularization and application.

[0036] In some embodiments, the p-type semiconductor material includes a p-type organic semiconductor material.

[0037] In some embodiments, the P-type organic semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, tetracyanoquinodimethane.

[0038] In some embodiments, in the composite material, the mass ratio of the semiconductor material to the modifier is (5 to 50):1, and for example, it can be 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, etc. Within the range of the mass ratio, it is beneficial for the modifier to increase the number of holes and the hole migration efficiency of the P-type semiconductor material.

[0039] In some embodiments, in the composite material, the P-type semiconductor material and the modifier form a charge transfer complex.

[0040] Exemplarily, when the P-type semiconductor material is PVK (poly(N-vinylcarbazole)) and the modifier is trinitrophenol:

[0041] PVK has an aromatic structure. As a nitrogen-containing heterocyclic high polymer with carbazole molecules, it has a series of excellent properties, such as low water absorption rate, small coefficient of thermal expansion, relatively high glass transition temperature and heat distortion temperature, very small creep, excellent thermal stability, and excellent dielectric properties, remaining unchanged even at relatively high temperatures and within a wide frequency range, and having relatively high chemical stability. PVK is polymerized from N-Vinyl carbazole monomers. Due to the presence of carbazole side groups, it has strong hole transport ability and a high glass transition temperature, so it is often used as a hole functional material in optoelectronic devices, but its hole mobility is relatively low;

[0042] When trinitrophenol is doped into PVK, charge transfer will occur between the carbazole groups in PVK and the nitro groups in trinitrophenol, forming a composite material. Among them, PVK is the donor and trinitrophenol serves as the acceptor. Under the excitation of external electric field energy, PVK will transfer electrons to the acceptor trinitrophenol, thereby generating holes and increasing the number of holes and hole mobility.

[0043] In some embodiments, the composite material is composed of the P-type semiconductor material and the modifier.

[0044] In a second aspect, please refer to Figure 1 , the embodiments of the present application further provide a preparation method of a composite material, including:

[0045] S11. Provide a modifier, where the modifier includes one or more of an aromatic compound substituted by a first substituent and a heteroaromatic compound substituted by a first substituent, and the first substituent includes -NO2 and -OH;

[0046] S12. Provide a dispersion liquid of a P-type semiconductor material, which includes a P-type semiconductor material. Mix and react the dispersion liquid of the P-type semiconductor material and the modifier to obtain a composite material.

[0047] The P-type semiconductor material and the modifier are as described above and will not be elaborated here.

[0048] In some embodiments, the dispersion liquid of the P-type semiconductor material further includes a solvent.

[0049] Furthermore, the solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0050] In some embodiments, in the P-type semiconductor material dispersion liquid, the mass concentration of the P-type semiconductor material is 30 mg / mL to 50 mg / mL, and can be, for example, 35 mg / mL, 40 mg / mL, 45 mg / mL, etc. Within the range of the mass concentration, it is beneficial to the dissolution and dispersion of the P-type semiconductor material.

[0051] In some embodiments, the mass ratio of the P-type semiconductor material to the modifier is (5 to 50):1, and can be, for example, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, etc. Within the range of the mass ratio, it is beneficial for the modifier and the P-type semiconductor material to come into full contact and react, improving the yield of the composite material.

[0052] In some embodiments, after the P-type semiconductor material dispersion liquid and the modifier are mixed, heating is further included.

[0053] In some embodiments, the temperature of the heating is 50°C to 100°C, and can be, for example, 55°C, 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, etc.; the time of the heating is 5 h to 7 h, and can be, for example, 5.2 h, 5.5 h, 5.8 h, 6 h, 6.2 h, 6.5 h, 6.8 h, etc.

[0054] Thus, under the above heating conditions, it is beneficial for the P-type semiconductor material and the modifier to come into full contact and react to form a composite material.

[0055] The preparation method of the composite material provided by this application is simple in operation and low in cost, and can effectively prepare the composite material.

[0056] In the third aspect, please refer to Figure 2 , this application embodiment also provides an optoelectronic device, including an anode 10, a hole functional layer 20, an active layer 30, and a cathode 40 that are sequentially stacked; the material of the hole functional layer 20 includes a composite material, and the composite material includes the above-mentioned composite material, or includes the composite material prepared by the above-mentioned preparation method.

[0057] In the optoelectronic device provided by this application, the material of the hole functional layer 20 includes a composite material, which can increase the number of holes, improve the hole mobility, promote the effective recombination of holes and electrons in the active layer 30, and reduce the non-radiative recombination caused by electron accumulation; and the hole functional layer 20 is disposed adjacent to the active layer 30, and the hydroxyl groups in the modifier can passivate the exposed defect states of the material in the active layer 30 appropriately and approach the material of the active layer 30 through hydroxyl adsorption, reducing the steric hindrance in this region and improving the connection tightness and binding force between the hole functional layer 20 and the active layer 30.

[0058] It can be understood that the optoelectronic device provided by the present application can be a normal-type optoelectronic device or an inverted-type optoelectronic device.

[0059] Please refer to Figure 3 , in some embodiments, the hole functional layer 20 includes one or more of a hole injection layer 21 and a hole transport layer 22.

[0060] Preferably, the material of the hole transport layer 22 includes a composite material.

[0061] It should be further noted that the HOMO energy level of the existing hole injection layer 21 is generally relatively shallow. For example, PEDOT:PSS is -5.2 eV, resulting in a large external assistance required for holes to transfer from the hole injection layer 21 to the hole transport layer 22, that is, a relatively high driving voltage is required to promote hole transport. And the modifier can reduce the HOME energy level of the composite material, thereby reducing the energy level transition barrier for holes to transfer from the hole injection layer 21 to the hole transport layer 22, thereby reducing the turn-on voltage of the optoelectronic device and improving the stability of the optoelectronic device.

[0062] In some embodiments, the optoelectronic device further includes an electron functional layer 50, and the electron functional layer 50 is disposed between the active layer 30 and the cathode 40.

[0063] Furthermore, the electron functional layer 50 includes one or more of an electron injection layer and an electron transport layer.

[0064] In some embodiments, the material of the electron functional layer 50 includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS.

[0065] In some embodiments, the optoelectronic device includes a light-emitting diode. The active layer 30 includes a light-emitting layer.

[0066] In some embodiments, the anode 10 and the cathode 40 each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a metal oxide electrode or a composite electrode having a metal disposed between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. Herein, " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence.

[0067] In some embodiments, the material of the active layer 30 includes a light-emitting material, and the light-emitting material includes one or more of an organic light-emitting material and a quantum dot light-emitting material. When the material of the active layer 30 is a quantum dot light-emitting material, -OH of the modifier in the composite material in the hole functional layer 20 can moderately passivate the exposed defect states of the quantum dot light-emitting material, and promote the approach of the quantum dot light-emitting material and the composite material through hydroxyl adsorption, reduce the steric hindrance at the interface between the hole functional layer 20 and the active layer 30, improve the connection tightness and binding force between the hole functional layer 20 and the active layer 30, and further improve the performance of the optoelectronic device.

[0068] The organic light-emitting material may be selected from, but not limited to, one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing B-N covalent bonds, HLCT (hybrid local charge transfer excited state) materials, and Exciplex (excimer complex) light-emitting materials.

[0069] The quantum dot light-emitting material may be selected from, but not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0070] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may be respectively selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell layer of the core-shell structure quantum dots is one or more layers. The II-VI group compounds may be selected from, but not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may be selected from, but not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds may be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds may be selected from, but not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0071] As an example, the quantum dots of the core-shell structure can be selected from but not limited to one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the expressions such as CdSe / ZnS above, the " / " indicates that the substance after " / " (as the shell layer) coats the substance before " / " (as the core layer).

[0072] The perovskite semiconductor material can be selected from but not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is a Cs + ion, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu - Cl - Br - I n-2 NH3 + or [NH3(CH2) n NH3] 2+ where n≥2, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu - Cl - Br -One or more of the above. Fourthly, an embodiment of the present application further provides a display device, and the display device includes the above optoelectronic device.

[0073] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0074] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0075] Embodiment 1

[0076] This embodiment provides a composite material, including an electron donor semiconductor material PVK and an electron acceptor modifier trinitrophenol. The mass ratio of zinc oxide to trinitrophenol is 10:1. The preparation method is as follows:

[0077] Weigh 400 mg of PVK and dissolve it in 10 mL of chlorobenzene to prepare a solution of 40 mg / mL. Then add 40 mg of trinitrophenol thereto. Place the mixed solution on a stirring table, and after heating the stirring table to 70 °C, stir for 8 h until it is completely dispersed and uniform to obtain the composite material.

[0078] Embodiment 2

[0079] Embodiment 2 is basically the same as Embodiment 1, except that the mass of trinitrophenol in Embodiment 2 is 80 mg.

[0080] Embodiment 3

[0081] Embodiment 3 is basically the same as Embodiment 1, except that the mass of trinitrophenol in Embodiment 3 is 8 mg.

[0082] Embodiment 4

[0083] Embodiment 4 is basically the same as Embodiment 1, except that the reaction temperature of trinitrophenol and PVK in Embodiment 4 is 100 °C.

[0084] Embodiment 5

[0085] Embodiment 5 is basically the same as Embodiment 1, except that the reaction temperature of trinitrophenol and PVK in Embodiment 5 is 50 °C.

[0086] Embodiment 6

[0087] Example 6 is basically the same as Example 1, except that the reaction time of picric acid and PVK in Example 6 is 10 h.

[0088] Example 7

[0089] Example 7 is basically the same as Example 1, except that the reaction time of picric acid and PVK in Example 7 is 5 h.

[0090] Example 8

[0091] Example 8 is basically the same as Example 1, except that PVK is replaced by TFB in Example 8;

[0092] Example 9

[0093] Example 9 is basically the same as Example 1, except that PVK is replaced by α-NPB in Example 9;

[0094] Example 10

[0095] Example 10 is basically the same as Example 1, except that picric acid is replaced by 2,4-dinitrophenol in Example 10.

[0096] Example 11

[0097] Example 11 is basically the same as Example 1, except that picric acid is replaced by 2,6-dichloro-4-nitrophenol in Example 11.

[0098] Comparative Example 1

[0099] This comparative example provides a material including a semiconductor material PVK.

[0100] Comparative Example 2

[0101] This comparative example provides a material including a semiconductor material TFB.

[0102] Comparative Example 3

[0103] This comparative example provides a material including a semiconductor material α-NPB.

[0104] The hole mobilities of the composite materials of Examples 1 to 11 and Comparative Examples 1 to 3 were respectively tested, and the results are shown in Table 1.

[0105] Among them, the test method for hole mobility is: testing the current density-voltage curve of the half-device (single-carrier transport thin-film device HOD) of the optoelectronic device. Among them, the structure of HOD is anode / hole transport thin film / quantum dot light-emitting layer / cathode, obtaining the space charge limited current (SCLC) region in the current density-voltage curve, and then according to the formula J=(9 / 8)ε rε0μ e V 2 / d 3 Calculate the hole mobility, where J represents the current density in mA cm -2 ; ε r represents the relative permittivity, ε0 represents the permittivity of vacuum; μ e represents the electron mobility in cm 2 V -1 s -1 ; V represents the driving voltage in V; d represents the film thickness in m.

[0106] Table 1

[0107]

[0108]

[0109] It can be seen from Table 1 that:

[0110] From Examples 1 to 3 and Comparative Example 1, it can be obtained that doping the modifier into the P-type semiconductor material can effectively improve the hole mobility of the composite material. Within the proportion range of the modifier and the P-type semiconductor material provided in this application, the number of holes and the hole migration efficiency can be effectively improved;

[0111] From Examples 1, 4 to 7 and Comparative Example 1, it can be known that within the temperature and time range for the modifier and the P-type semiconductor material provided in this application to react to form a complex, the hole mobility of the composite material is stable at 0.8×10 -5 cm 2 V -1 s -1 ~0.95×10 -5 cm 2 V -1 s -1 , showing obvious improvement compared with the materials in the comparative example;

[0112] From Examples 1, 8 to 11 and Comparative Examples 1 to 3, it can be known that replacing the P-type semiconductor material and the modifier material has a certain influence on the hole mobility; among them, picric acid as the modifier has a better effect than 2,4-dinitrophenol and 2,6-dichloro-4-nitrophenol, which may be because picric acid contains more nitro groups and accepts more electrons, resulting in more holes in the composite material; in short, the P-type semiconductor material and the modifier material provided in this application can both promote the improvement of the hole migration efficiency of the composite material.

[0113] Device Example 1

[0114] This example provides an optoelectronic device, and the preparation method is as follows:

[0115] First, clean the ITO conductive glass. Dip a cotton swab in a small amount of soapy water and wipe the ITO surface to remove visible impurities on the surface. Then, ultrasonically clean it with deionized water, acetone, ethanol, and isopropanol for 15 minutes, and then dry it with nitrogen for later use to form the anode;

[0116] Use a pipette to aspirate 50 μL of the prepared PEDOT:PSS solution and drop it on the ITO. Then start spin-coating. The spin-coating speed is 4000 rpm, and the time is controlled within 50 seconds. Then perform annealing. The annealing temperature is 150 °C, and the annealing time is controlled within 15 minutes to form the hole injection layer;

[0117] Aspirate 40 μL of the composite material of Example 1 and slowly drop it on top of the hole injection layer, then perform spin-coating. The spin-coating speed is 4000 rpm, and the time is controlled within 30 s. Then perform annealing. The annealing temperature is 140 °C, and the annealing time is controlled within 15 minutes to form the hole transport layer;

[0118] Dissolve the prepared CdZnS quantum dots in n-hexane to obtain a quantum dot solution with a concentration of 15 mg / mL. Use a pipette to aspirate 40 μL and drop it on the surface that already contains the hole transport layer, then perform spin-coating. The spin-coating speed is 3000 rpm, and the time is controlled within 40 s. Then perform annealing. The annealing temperature is 120 °C, and the annealing time is controlled within 10 minutes to form the light-emitting layer;

[0119] Use a pipette to aspirate 40 μL of zinc oxide solution and slowly drop it on top of the light-emitting layer, then perform spin-coating. The spin-coating speed is 4000 rpm, and the time is controlled within 30 s. Then perform annealing. The annealing temperature is 130 °C, and the annealing time is controlled within 15 minutes to form the electron transport layer;

[0120] Perform electrode evaporation. After putting the above device into a vacuum coater, pump the vacuum to 4×10 -6 mbar. When evaporating, first evaporate the magnesium target material. The magnesium target material is evaporated at a rate to a thickness of 15 nm; turn on the Ag target material, and the Ag target material is evaporated at a rate to a thickness of 30 nm;

[0121] Encapsulate with ultraviolet curable glue to obtain the optoelectronic device.

[0122] Device Examples 2 - 11

[0123] Device Examples 2 - 11 are basically the same as Device Example 1, except that in Device Examples 2 - 11, the composite material of Example 1 is replaced with the composite materials of Examples 2 - 11 respectively.

[0124] Device Comparative Examples 1 - 3

[0125] Device Comparative Examples 1 to 3 are basically the same as Device Example 1, except that in Device Comparative Examples 1 to 3, the composite materials in Example 1 are respectively replaced with the materials in Comparative Examples 1 to 3.

[0126] The luminous intensity and the lifetime T95@1000nit of the optoelectronic devices of Device Examples 1 to 11 and Device Comparative Examples 1 to 3 were respectively tested, and the results are shown in Table 2.

[0127] The physical meaning of the luminous intensity is the luminous intensity passing through a unit area per unit time in a specific direction, with the unit of cd / A, and it is measured using a photometer.

[0128] The test method for the lifetime T95@1000nit is as follows: When the device is driven by a constant current or voltage, the time required for the brightness to decrease to a certain proportion of the maximum brightness. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the test cycle, the device lifetime test is usually carried out by accelerating the device aging at high brightness, and the lifetime at high brightness is obtained by fitting with an extended exponential decay brightness decay fitting formula. For example, the lifetime at 1000nit is denoted as T95@1000nit. The specific calculation formula is as follows:

[0129]

[0130] Among them, T95 L is the lifetime at low brightness, T95 H is the measured lifetime at high brightness, L H is the device accelerated to the maximum brightness, L L is 1000nit, A is the acceleration factor, and in this experiment, the value of A is obtained as 1.7 by measuring the lifetimes of several groups of QLED devices at the rated brightness.

[0131] Table 2

[0132]

[0133]

[0134] As can be seen from Table 2:

[0135] From Device Examples 1 to 3 and Device Comparative Example 1, it can be obtained that doping the modifier into the P-type semiconductor material can effectively promote the hole transfer to the light-emitting layer, recombine with electrons to emit light, thereby improving the luminous intensity and service life of the optoelectronic device; within the range of the modifier and the P-type semiconductor material provided in this application, the performance of the optoelectronic device can be effectively improved;

[0136] As can be seen from Device Examples 1, 4 to 7 and Device Comparative Example 1, within the scope provided by the present application for the temperature and time at which the modifier reacts with the P-type semiconductor material to form a complex, the modifier can effectively reduce the energy level of the hole functional layer, thus making it more matched with the energy level of the hole injection layer, and promoting the transport of holes from the hole injection layer to the hole transport layer; thereby improving the luminous intensity and service life of the optoelectronic device.

[0137] As can be seen from Device Examples 1, 8 to 11 and Device Comparative Examples 1 to 3, replacing the P-type semiconductor material and the modifier material has a certain impact on the hole mobility of the hole transport layer; however, compared with Device Comparative Examples 1 to 3, the composite materials formed by the modifier and the P-type semiconductor material provided by the present application can effectively improve the luminous intensity of the optoelectronic device and extend the service life of the optoelectronic device.

[0138] The above has introduced in detail the composite material provided by the embodiments of the present application, its preparation method, optoelectronic device, and display device. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, based on the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A composite material, characterized in that, It includes a P-type semiconductor material and a modifier, and the modifier includes one or more of an aromatic compound substituted with a first substituent and a heteroaromatic compound substituted with a first substituent, and the first substituent includes -NO2 and -OH.

2. The composite material according to claim 1, wherein in the composite material, the mass ratio of the semiconductor material to the modifier is (5 to 50):1; and / or in the composite material, the P-type semiconductor material and the modifier form a charge transfer complex; and / or the composite material is composed of the P-type semiconductor material and the modifier.

3. The composite material according to claim 1, wherein the P-type semiconductor material includes a P-type organic semiconductor material; and / or the -NO2 in the first substituent is one or more; and / or the -OH in the first substituent is one or more; and / or the substituent of the aromatic compound and / or the heteroaromatic compound further includes a second substituent, and the second substituent includes an electron-withdrawing group; and / or the heteroatom in the heteroaromatic compound includes one or more of P, N, S, O, and Si.

4. The composite material according to claim 3, wherein the electron-withdrawing group includes one or more of -F, -Cl, -Br, -I, -CN, -SO3H, -CHO, and -COOH; and / or the aromatic compound includes one or more of benzene, biphenyl, terphenyl, naphthalene, anthracene, phenanthrene, fluorene, and spirobifluorene; and / or the heteroaromatic compound includes one or more of carbazole, thiophene, furan, pyrrole, pyridine, benzocarbazole, benzofuran, benzothiophene, and benzopyrrole.

5. The composite material according to claim 3, wherein The P-type organic semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbiphenylamine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, tetracyanoquinodimethane; and / or The modifier includes one or more of trinitrophenol, dinitrophenol, o-nitrophenol, m-nitrophenol, p-nitrophenol, dinitroresorcinol, 2,6-dichloro-4-nitrophenol.

6. A method for preparing a composite material, characterized in that, including: Provided is a modifier, which includes one or more of an aromatic compound substituted by a first substituent and a heteroaromatic compound substituted by a first substituent, and the first substituent includes -NO2 and -OH; Provided is a P-type semiconductor material dispersion liquid, which includes a P-type semiconductor material. The P-type semiconductor material dispersion liquid and the modifier are mixed and reacted to obtain a composite material.

7. The preparation method according to claim 6, wherein the P-type semiconductor material includes a P-type organic semiconductor material; and / or -NO2 in the first substituent is one or more; and / or -OH in the first substituent is one or more; and / or The substituent of the aromatic compound and / or the heteroaromatic compound further includes a second substituent, and the second substituent includes an electron-withdrawing group; the electron-withdrawing group includes one or more of -F, -Cl, -Br, -I, -CN, -SO3H, -CHO, -COOH; and / or The heteroatom in the heteroaromatic compound includes one or more of P, N, S, O, Si; and / or The aromatic compound includes one or more of benzene, biphenyl, terphenyl, naphthalene, anthracene, phenanthrene, fluorene, spirobifluorene; and / or The heteroaromatic compound includes one or more of carbazole, thiophene, furan, pyrrole, pyridine, benzocarbazole, benzofuran, benzothiophene, benzopyrrole.

8. The preparation method according to claim 7, wherein The P-type organic semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, tetracyanoquinodimethane; and / or The modifier includes one or more of picric acid, dinitrophenol, o-nitrophenol, m-nitrophenol, p-nitrophenol, dinitroresorcinol, 2,6-dichloro-4-nitrophenol.

9. The preparation method according to claim 6, characterized in that in the P-type semiconductor material dispersion liquid, the mass concentration of the P-type semiconductor material is 30 mg / mL to 50 mg / mL; and / or the mass ratio of the P-type semiconductor material to the modifier is (5 to 50):1; and / or after the P-type semiconductor material dispersion liquid and the modifier are mixed, heating is further included; the heating temperature is 50 °C to 100 °C; the heating time is 5 h to 7 h; and / or the P-type semiconductor material dispersion liquid further includes a solvent; the solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

10. An optoelectronic device, characterized in that, It includes an anode, a hole functional layer, an active layer, and a cathode that are sequentially stacked; the material of the hole functional layer includes the composite material according to any one of claims 1 to 5, or includes the composite material prepared by the preparation method according to any one of claims 6 to 9.

11. The optoelectronic device according to claim 10, characterized in that the anode and the cathode each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal disposed between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or The material of the active layer includes a luminescent material, and the luminescent material includes one or more of an organic luminescent material and a quantum dot luminescent material; the organic luminescent material is selected from one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF material, a polymer containing a B-N covalent bond, HLCT material, and Exciplex luminescent material; the quantum dot luminescent material is selected from one or more of a single-structure quantum dot, a core-shell structure quantum dot, and a perovskite semiconductor material; the material of the single-structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot are respectively selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds; the shell layer of the core-shell structure quantum dot is one or more layers; the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe;The III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compounds are selected from one or more of CuInS2, CuInSe2 and AgInS2; the core-shell structure quantum dots are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS; the perovskite semiconductor materials are selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + ion, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Yb 2+ Eu 2+ one or more of them, and X is a halogen anion selected from - Cl - Br - I n-2 one or more of them; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2) + NH3 n or [NH3(CH2) n NH3] 2+ where n≥2, and M is a divalent metal cation selected from Pb 2+ Sn 2+ 、 Cu 2+ 、 Ni 2+ 、 Cd 2+ 、 Cr 2+ 、 Mn 2+ 、 Co 2+ 、 Fe 2+ 、 Ge 2+ 、 Yb 2+ 、 Eu 2+ one or more of the following, X is a halogen anion selected from Cl - 、 Br - 、 I - one or more of the following; and / or The optoelectronic device further includes an electron functional layer disposed between the active layer and the cathode; the material of the electron functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

12. A display device, characterized in that, An optoelectronic device according to any one of claims 10 to 11.

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