Wafer cleaning device and method

Abstract

The invention provides a wafer cleaning device and method, and the device comprises a plasma generator which comprises a discharge electrode structure and a power supply, and the discharge electrode structure comprises two plate electrodes which are arranged at an interval and two fixed blocking mediums which are arranged between the plate electrodes, a discharge gap for indirect dielectric barrier discharge is formed between the two fixed barrier media, the discharge electrode structure comprises an air inlet side and an air outlet side, and the power supply is used for supplying power to the plate electrode; the gas control mechanism is used for conveying gas to the plasma generator; and the wafer bearing mechanism is used for bearing a cleaned wafer, and the wafer bearing mechanism is arranged on the air outlet side of the plasma generator, so that particles ejected from a discharge gap of the plasma generator are ejected out of the discharge gap along with airflow to form plasma plumes, and then the surface of the wafer is cleaned. According to the invention, efficient cleaning of the wafer surface can be realized.

Description

Technical Field

[0001] The present application relates to the technical field of wafer cleaning, and particularly relates to a wafer cleaning device and method. Background Art

[0002] In recent years, with the development of semiconductor technology, the process technology and quality requirements for wafers in the chip manufacturing process have also been continuously improved. However, in the semiconductor production process, trace contaminants (including particulate matters such as silicon dioxide SiO2, aluminum oxide Al2O3, and organic matters in polishing solution) will adhere to the wafer surface. These contaminants on the semiconductor wafer surface will seriously affect the performance, reliability, and yield rate of microelectronic devices. According to statistics, in the current integrated circuit production, the material loss caused by semiconductor wafer impurity problems may reach more than 50%. In semiconductor production, cleaning technology is of utmost importance. Each process requires cleaning, and the cleaning technology and quality will directly affect the device performance.

[0003] Currently, the more widely used cleaning methods mainly include wet cleaning, industrial standard wet cleaning (RCA cleaning), and plasma cleaning, etc. Traditional wet cleaning has the following disadvantages: it is impossible to precisely control the cleaning process, new impurities are easily introduced during cleaning, and this method requires secondary treatment of waste materials, etc. Therefore, plasma cleaning methods have been introduced in the prior art.

[0004] Currently, most semiconductor devices need to be cleaned in a vacuum environment, which requires a complex and expensive vacuum system. It not only cannot achieve continuous cleaning but also has a high cost. Atmospheric pressure plasma cleaning technology does not require a vacuum system and has the advantages of low equipment investment and cleaning cost, and can achieve continuous cleaning treatment, etc. Currently, the main atmospheric pressure plasma cleaning methods are plasma jet cleaning and DBD (Dielectric Barrier Discharge) plasma cleaning. For the plasma jet cleaning method, since the plasma jet cleaning area is too small, it is not suitable for cleaning the large-area wafer surface. Invention Application CN113731945A discloses an atmospheric pressure plasma cleaning device, which can generate a stable discharge plasma gas beam at atmospheric pressure through a plasma jet device to achieve the surface cleaning of semiconductor devices. In this method, the aperture size of the injection through-hole is only 200 to 600 μm, and plasma is only generated at the injection part to achieve the cleaning purpose, and it is impossible to achieve large-area and high-efficiency cleaning of the wafer surface. For the DBD plasma cleaning method, currently, it mainly uses plate-plate dielectric barrier discharge to form a large-area plasma, and directly places the material to be cleaned in the discharge space between the electrode plates to achieve direct dielectric barrier discharge cleaning. However, under atmospheric pressure air, DBD generally presents filamentary discharge. Placing the material to be cleaned in the discharge space is likely to cause local ablation of the material surface. Summary of the Invention

[0005] In view of the problems in the prior art, the purpose of the present application is to provide a wafer cleaning device and method, which can achieve large-area and efficient cleaning of the wafer without damaging the wafer.

[0006] An embodiment of the present application provides a wafer cleaning device, including:

[0007] A plasma generator, including a discharge electrode structure and a power supply. The discharge electrode structure includes two flat electrodes arranged at intervals and two fixed barrier dielectrics arranged between the flat electrodes. A discharge gap for indirect dielectric barrier discharge is formed between the two fixed barrier dielectrics. The discharge electrode structure includes an air inlet side and an air outlet side, and the power supply is used to supply power to the flat electrodes;

[0008] A gas control mechanism for delivering gas to the plasma generator;

[0009] A wafer carrying mechanism for carrying the wafer to be cleaned. The wafer carrying mechanism is arranged on the air outlet side of the plasma generator, so that after the particles ejected from the discharge gap of the plasma generator are ejected from the discharge gap with the airflow to form a plasma plume, the surface of the wafer is cleaned.

[0010] In some embodiments, the plasma generator further includes at least one gas flow equalizing structure. The gas flow equalizing structure includes an air inlet side and an air outlet side, and the air outlet side of the gas flow equalizing structure is docked with the air inlet side of the discharge electrode structure.

[0011] In some embodiments, the air outlet side of the gas flow equalizing structure is provided with evenly distributed air outlet holes.

[0012] In some embodiments, the plasma generator includes a first gas flow equalizing structure and a second gas flow equalizing structure. The air outlet side of the first gas flow equalizing structure is docked with the air inlet side of the second gas flow equalizing structure, and the diameter of the air outlet holes on the air outlet side of the first gas flow equalizing structure is larger than the diameter of the air outlet holes on the air outlet side of the second gas flow equalizing structure.

[0013] In some embodiments, the wafer carrying mechanism includes a wafer transfer platform and a motion control platform, and the motion control platform drives the wafer transfer platform to move the wafer.

[0014] In some embodiments, a reaction chamber is further included, and the plasma generator and the wafer carrying mechanism are both arranged inside the reaction chamber.

[0015] In some embodiments, a tail gas treatment mechanism is further included, and the air inlet end of the tail gas treatment mechanism is communicated with the inside of the reaction chamber.

[0016] In some embodiments, the gas control mechanism includes a main gas pipe and an auxiliary gas pipe. The main gas pipe is used to transport gas into the reaction chamber, and the auxiliary gas pipe is used to transport gas to the gas inlet side of the plasma generator.

[0017] In some embodiments, the gas control mechanism further includes a gas flow control module, and the gas flow control module is used to control the delivery gas flow of the main gas pipe and / or the auxiliary gas pipe.

[0018] The present application also provides a wafer cleaning method, which uses any one of the above-mentioned wafer cleaning devices. The method includes the following steps:

[0019] Placing the wafer to be cleaned on the wafer carrying mechanism so that the wafer is located on the gas outlet side of the discharge electrode structure;

[0020] The gas control mechanism supplies gas to the plasma generator and supplies power to the flat electrode of the plasma generator, so that particles ejected from the discharge gap of the plasma generator are ejected out of the discharge gap along with the air flow to form a plasma plume, which cleans the surface of the wafer.

[0021] The wafer cleaning device and method provided in this application have the following advantages:

[0022] By adopting the present application, the wafer to be cleaned is placed on a wafer carrier mechanism and placed on the gas outlet side of the plasma generator. Gas is supplied to the plasma generator through a gas control mechanism so that particles ejected from the discharge gap between the two flat electrodes of the discharge electrode structure are ejected out of the discharge gap with the airflow to form a plasma plume, which then cleans the wafer surface. This method, on the one hand, enables the wafer surfaces opposite the gas outlet side of the discharge electrode structure to be cleaned simultaneously, achieving large-area cleaning of the wafer. On the other hand, the wafer is not directly placed in the discharge gap of the discharge electrode mechanism, but the plasma plume is transported to the wafer surface by the airflow, realizing a remote plasma cleaning structure of indirect flat-plate dielectric barrier discharge, avoiding damage to the wafer surface caused by direct flat-plate dielectric barrier discharge cleaning method, thereby providing a large-area, efficient cleaning device and method for wafers without damaging the wafer. The wafer cleaning device of the present application does not require a vacuum system and has the advantages of low equipment cost and low cleaning cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Other features, objects and advantages of the present application will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings.

[0024] Figure 1 1 is a schematic structural diagram of a wafer cleaning device according to an embodiment of the present application;

[0025] Figure 2 is a schematic structural diagram of a plasma generator according to an embodiment of the present application;

[0026] Figure 3 is a cross-sectional view of the discharge electrode structure according to an embodiment of the present application;

[0027] Figure 4 is a flowchart of a wafer cleaning method according to an embodiment of the present application.

[0028] Reference numerals:

[0029] 1 - Plasma generator; 11 - First air inlet; 12 - Second air inlet; 13 - First gas flow equalizing structure; 14 - Second gas flow equalizing structure; 15 - Discharge electrode structure; 151 - Flat electrode; 152 - Fixed barrier medium; 153 - Fixed housing; 16 - Discharge gap; 2 - Gas control mechanism; 21 - First auxiliary air pipe; 22 - Second auxiliary air pipe; 23 - Main air pipe; 3 - Power supply; 4 - Wafer carrying mechanism; 41 - Wafer transfer platform; 42 - Motion control platform; 5 - Reaction chamber; 6 - Tail gas treatment mechanism. Detailed implementation manners

[0030] Now, example embodiments will be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this application will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. Like reference numerals in the figures denote like or similar structures, and thus their repeated description will be omitted. The "or" or "or" in the specification may both mean "and" or "or". Although terms such as "upper", "lower", "between" etc. may be used in this specification to describe different exemplary features and elements of the present application, these terms are used herein only for convenience, for example, according to the directions of the examples described in the drawings. Nothing in this specification should be construed as requiring a specific three-dimensional direction of the structure to fall within the scope of the present application. Although terms such as "first" or "second" etc. are used in this specification to denote certain features, they are only for the purpose of indication and do not limit the quantity and importance of the specific features.

[0031] As Figures 1 to 3 shown, an embodiment of the present application provides a wafer cleaning device, including: a plasma generator 1, including a discharge electrode structure 15 and a power supply 3, the discharge electrode structure 15 includes two spaced flat electrodes 151 and two fixed barrier media 152 disposed between the flat electrodes 151, a discharge gap 16 for indirect dielectric barrier discharge is formed between the fixed barrier media 152 on the surfaces of the two flat electrodes 151, the discharge electrode structure 15 includes an air inlet side (Figure 2 the upper side of the discharge electrode structure 15 in the [device] and the gas outlet side ( Figure 2 the lower side of the discharge electrode structure 15 in the [device], and the power supply 3 is used to supply power to the flat electrode 151; a gas control mechanism 2, configured to supply gas to the plasma generator 1; a wafer carrying mechanism 4, configured to carry the wafer to be cleaned, and the wafer carrying mechanism 4 is arranged on the gas outlet side of the plasma generator 1, so that after the particles ejected from the discharge gap 16 of the plasma generator 1 are ejected from the discharge gap 16 with the air flow to form a plasma plume, the surface of the wafer is cleaned.

[0032] In this application, the surface of the wafer is cleaned by various particles in the plasma state. Compared with the traditional wet cleaning technology, the wafer cleaning device of this application has the advantages of simple operation, can precisely control the cleaning process, and is not likely to introduce new impurities during the cleaning process. The plasma state is the fourth state of matter after solid, liquid, and gas, and its system is rich in active components such as high-energy electrons, ions, excited atoms, and free radicals. And atmospheric pressure low-temperature plasma is a non-equilibrium plasma generated by gas discharge under open atmospheric pressure conditions, with high chemical activity and a gas temperature close to room temperature, and has been widely used as a new means of molecular activation. Plasma cleaning technology uses the activation of various high-energy electrons, ions, excited atoms, free radicals and other particles in the plasma to remove contaminants, particles and other impurities on the surface of the wafer. Plasma cleaning has the characteristics of not using chemical reagents and not causing secondary pollution; simple process flow, fast cleaning rate, and can achieve efficient cleaning of complex or irregular structures.

[0033] Planar Dielectric Barrier Discharge (DBD) is a discharge technology for generating non-equilibrium plasma under atmospheric pressure, with the characteristics of simple structure, low cost, and uniform discharge over a large area. The flat electrode 151 is a metal electrode, and the fixed barrier dielectric 152 is an insulating dielectric (such as quartz glass, ceramic, alumina) covered on the surface of the flat electrode 151, serving as the barrier dielectric. The principle of planar dielectric barrier discharge is: when the voltage rises to the breakdown threshold, the gas is ionized, generating a large number of active particles such as high-energy electrons, ions, and free radicals, forming filamentous discharge channels or uniform discharge. The presence of the barrier dielectric prevents the formation of a continuous arc between the electrodes, avoiding spark discharge, and enabling the discharge to exist stably in the form of non-equilibrium plasma.

[0034] By adopting the present application, the wafer to be cleaned is placed on the wafer carrier mechanism 4 and positioned on the gas outlet side of the plasma generator 1. The gas control mechanism 2 is used to supply gas to the plasma generator 1. The working gas enters the discharge gap 16 between the two flat electrodes 151 of the discharge electrode structure 15. Under the action of the plasma, various particles (high-energy electrons, ions, excited atoms, free radicals, etc.) generated by the excitation of the gas are ejected from the discharge gap 16 with the gas flow to form a plasma plume that acts on the surface of the wafer. Through physical bombardment effects and chemical reactions, the surface of the wafer is efficiently cleaned. In this way, on the one hand, the surfaces of the wafers opposite to the gas outlet side of the discharge electrode structure 15 can be cleaned simultaneously, and the uniformity of the plasma generated by indirect flat dielectric barrier discharge can be improved, achieving large-area cleaning of the wafer. On the other hand, the wafer is not directly placed in the discharge gap 16 of the discharge electrode structure 15, but the plasma plume is transported to the wafer surface through the gas flow, realizing a remote plasma cleaning structure for indirect flat dielectric barrier discharge, avoiding damage to the wafer surface caused by the direct flat dielectric barrier discharge cleaning method. Thus, a large-area and high-efficiency cleaning device for wafers without damaging the wafers is provided. The wafer cleaning device of the present application does not require a vacuum system and has the advantages of low equipment cost and low cleaning cost.

[0035] In this embodiment, the plasma generator 1 further includes at least one gas flow equalizing structure. The gas flow equalizing structure includes an air inlet side and an air outlet side, and the air outlet side of the gas flow equalizing structure is docked with the air inlet side of the discharge electrode structure 15. Through the gas flow equalizing structure, the gas flow distribution can be made more uniform when the working gas enters between the discharge electrode structures 15. In this embodiment, the air outlet side of the gas flow equalizing structure is provided with evenly distributed air outlet holes, and the air outlet holes are evenly distributed on the surface of the air outlet side of the gas flow equalizing structure.

[0036] As Figure 2 shown, in this embodiment, the plasma generator 1 includes a first gas flow equalizing structure 13 and a second gas flow equalizing structure 14. The air inlet side of the first gas flow equalizing structure 13 ( Figure 2 the upper side of the first gas flow equalizing structure 13 in Figure 2 is provided with a first air inlet 11 and a second air inlet 12. The gas control mechanism 2 is used to input gas into the first air inlet 11 and the second air inlet 12. The air outlet side of the first gas flow equalizing structure 13 ( Figure 2It is docked with the upper side of the second gas flow equalizing structure 14 (i.e., the bottom end of the first gas flow equalizing structure 13 is connected to the top end of the second gas flow equalizing structure 14). The diameter of the air outlet holes on the air outlet side of the first gas flow equalizing structure 13 is smaller than the diameters of the first air inlet 11 and the second air inlet 12. The diameter of the air outlet holes on the air outlet side of the first gas flow equalizing structure 13 is larger than the diameter of the air outlet holes on the air outlet side of the second gas flow equalizing structure 14, and the number of air outlet holes on the air outlet side of the first gas flow equalizing structure 13 is smaller than the number of air outlet holes on the air outlet side of the second gas flow equalizing structure 14. After the gas enters the first gas flow equalizing structure 13 through the first air inlet 11 and the second air inlet 12, the first uniform flow distribution is realized through the air outlet holes of the first gas flow equalizing structure 13, and then the second uniform flow distribution is realized through the air outlet holes of the second gas flow equalizing structure 14, so that when the air flow enters the discharge gap 16 of the discharge electrode structure 15, it can be more uniformly distributed, and thus the plasma plume ejected from the discharge gap 16 is more uniform and stable.

[0037] Therefore, in this embodiment, the plasma generator 1 includes a three-stage structure composed of a first gas flow equalizing structure 13, a second gas flow equalizing structure 14, and a discharge electrode structure 15. The gas flow equalizing structure can be increased or decreased step by step according to the size of the air flow. In this embodiment, an example of including two gas flow equalizing structures is used for illustration. In other alternative embodiments, only one gas flow equalizing structure can also be provided, or the number of gas flow equalizing structures can be further increased.

[0038] Figure 3 The figure shows a cross-sectional view of the indirect flat dielectric barrier discharge electrode structure 15 in the horizontal direction. Each flat electrode 151 is installed in the internal groove on one side of the fixed housing 153, and the fixed barrier dielectric 152 is arranged on one side of the flat electrode 151. A discharge gap 16 is formed between the fixed barrier dielectrics 152 on both sides. The distance of the discharge gap 16 of the indirect dielectric barrier discharge of the discharge electrode structure 15 can be adjusted according to the actual situation.

[0039] Such as Figure 2As shown, in this embodiment, the wafer carrier mechanism 4 includes a wafer transfer platform 41 and a motion control platform 42. The motion control platform 42 drives the wafer transfer platform 41 to move the wafer, enabling the wafer to reciprocate. For example, the motion control platform 42 uses a PLC (Programmable Logic Controller) to control a servo motor, and the motion parameters of the motion control platform 42 and the wafer transfer platform 41 can be set through software on the PC (personal computer) side. The wafer carrier mechanism 4 further includes a reaction chamber. Both the plasma generator 1 and the wafer carrier mechanism 4 are disposed inside the reaction chamber. The wafer carrier mechanism 4 further includes an exhaust gas treatment mechanism 6. The intake end of the exhaust gas treatment mechanism 6 is connected to the inside of the reaction chamber. The exhaust gas treatment mechanism 6 is used to centrally process the working gas and the debris generated during the cleaning process, avoiding environmental pollution of the working environment. The gas control mechanism 2 includes a main gas pipe 23 and auxiliary gas pipes (the first auxiliary gas pipe 21 and the second auxiliary gas pipe 22). The main gas pipe 23 is used to transport gas into the reaction chamber 5, and the auxiliary gas pipes are used to transport gas to the intake side of the plasma generator 1. In this embodiment, the gas control mechanism 2 further includes a gas flow control module, which is used to control the gas flow rate transported by the main gas pipe 23 and / or the auxiliary gas pipes.

[0040] In this embodiment, the continuous ventilation of the working gas through the main gas pipe 23 ensures the atmosphere of the reaction chamber 5, and can timely discharge the impurities in the reaction chamber 5, and perform gas replacement inside the reaction chamber 5. The working gas enters the discharge gap 16 of the plasma generator 1 through the first auxiliary gas pipe 21 and the second auxiliary gas pipe 22. The gas control mechanism 2 can replace different working gases according to the purpose of this wafer cleaning. The power supply 3 can be replaced with different power supplies (such as high-frequency AC power supply, RF power supply, pulse power supply, etc.) according to the actual needs of cleaning the wafer contaminants for nanomaterial preparation, and the power supply parameters can be regulated according to the working conditions (such as temperature, gas flow rate, etc.). The output port of the power supply 33 is connected to the plasma generator 1. After the power supply 3 is turned on, the high-energy electrons and high temperature generated by the high-voltage discharge of the flat electrode 151 cause the working gas in the reactor to be fully cracked and dissociated into ions, gaseous atoms and other particles, which are ejected from the electrode gap with the air flow to form a plasma plume, acting on the wafer surface. After undergoing an activation reaction with the contaminants, particles and other impurities on the wafer surface, the wafer surface is cleaned. During the wafer cleaning process, the motion control platform 42 controls the wafer transfer platform 41 to reciprocate on the horizontal plane, so that the plasma plume generated by the discharge is in full contact with the wafer. And by controlling the reciprocating motion of the wafer through the motion control platform 42, large-scale and continuous processing can be realized, further improving the efficiency of wafer cleaning.

[0041] Therefore, by adopting this wafer cleaning device, during the process of cleaning the wafer, the working gas enters the discharge gap 16 of the plasma generator 1. Under the action of the plasma, the active particles generated by the excitation of the gas are then formed into a plasma plume by the air flow and act on the surface of the wafer. The physical bombardment effect and chemical reaction coexist, efficiently completing the wafer cleaning. And this indirect plasma generation method can generate plasma uniformly and will not cause damage to the surface of the wafer.

[0042] In this embodiment, various parameters such as the size of the flat electrode 151, the size of the discharge gap 16, the distance between the discharge electrode structure 15 and the wafer, the type and frequency of the power supply 3, the discharge voltage, the type of working gas, the gas flow rate, and the processing time can all be set as needed. For example, in one implementation, the length dimension of each flat electrode 151 is 200 mm, the spacing between the two flat electrodes 151 is 2 mm, and the vertical spacing between the bottom of the flat electrode 151 and the wafer is 20 mm. The power supply 3 of the plasma generator 1 uses a high-frequency alternating current power supply 3. The frequency of the power supply 3 is adjusted to 10 kHz, the discharge voltage is 10 kV, a mixed gas of argon and oxygen is introduced into the discharge gap 16, the flow rate of the mixed gas is set to 1 m / s, and the processing time is 5 min. The plasma of oxygen and argon can remove photoresist residues and organic contaminants; oxygen (O2) and argon (Ar) + and O2 - ) and neutral molecules will be generated through indirect dielectric barrier discharge. These particles are accelerated under the action of the electric field and approach the surface of the wafer to be cleaned. Atomic oxygen can quickly react with organic substances to generate gas, which follows the air flow and is discharged from the chamber, achieving the effect of removing organic residues. Moreover, the energy of the particles is relatively high, generating a certain physical bombardment effect, which has a synergistic effect on the plasma action process and effectively removes solid particles such as dust on the surface.

[0043] As Figure 4 shown, the embodiment of the present application also provides a wafer cleaning method, adopting any one of the above wafer cleaning devices. The method includes the following steps:

[0044] S100: Place the wafer to be cleaned on the wafer carrying mechanism so that the wafer is located on the gas outlet side of the discharge electrode structure;

[0045] S200: Deliver gas to the plasma generator through the gas control mechanism and supply power to the flat electrode of the plasma generator, so that the particles ejected from the discharge gap of the plasma generator are ejected from the discharge gap with the air flow to form a plasma plume, and then clean the surface of the wafer.

[0046] By adopting the wafer cleaning method of the present application, the wafer to be cleaned is placed on a wafer carrying mechanism and placed on the gas outlet side of a plasma generator. A gas control mechanism is used to supply gas to the plasma generator, so that the particles ejected from the discharge gap between the two flat electrodes of the discharge electrode structure are ejected from the discharge gap with the airflow to form a plasma plume, and then the surface of the wafer is cleaned. On the one hand, this method enables the wafer surfaces opposite to the gas outlet side of the discharge electrode structure to be cleaned simultaneously, achieving large-area cleaning of the wafer. On the other hand, the wafer is not directly placed in the discharge gap of the discharge electrode mechanism, but the plasma plume is transported to the wafer surface through the airflow, realizing a remote plasma cleaning structure of indirect planar dielectric barrier discharge, avoiding damage to the wafer surface caused by the direct planar dielectric barrier discharge cleaning method. Thus, a method for achieving large-area and high-efficiency cleaning of the wafer without damaging the wafer is provided.

[0047] The above content is a further detailed description of the present application in combination with specific preferred embodiments. It cannot be determined that the specific implementation of the present application is only limited to these descriptions. For those of ordinary skill in the technical field to which the present application belongs, without departing from the concept of the present application, several simple deductions or substitutions can still be made, and all should be regarded as belonging to the protection scope of the present application.

Claims

1. A wafer cleaning device, characterized in that, Comprising: A plasma generator, including a discharge electrode structure and a power supply, the discharge electrode structure including two plate electrodes arranged at intervals and two fixed barrier media arranged between the plate electrodes, a discharge gap for indirect dielectric barrier discharge being formed between the two fixed barrier media, the discharge electrode structure including an air inlet side and an air outlet side, the power supply being used to supply power to the plate electrodes; A gas control mechanism for delivering gas to the plasma generator; A wafer carrying mechanism for carrying the wafer to be cleaned, the wafer carrying mechanism being arranged on the air outlet side of the plasma generator so that after the particles ejected from the discharge gap of the plasma generator are ejected from the discharge gap with the airflow to form a plasma plume, the surface of the wafer is cleaned.

2. The wafer cleaning device according to claim 1, wherein, The plasma generator further includes at least one gas flow equalizing structure, the gas flow equalizing structure including an air inlet side and an air outlet side, the air outlet side of the gas flow equalizing structure being docked with the air inlet side of the discharge electrode structure.

3. The wafer cleaning device according to claim 2, characterized in that, The air outlet side of the gas flow equalizing structure is provided with evenly distributed air outlet holes.

4. The wafer cleaning device according to claim 3, wherein The plasma generator includes a first gas flow equalizing structure and a second gas flow equalizing structure, the air outlet side of the first gas flow equalizing structure being docked with the air inlet side of the second gas flow equalizing structure, the diameter of the air outlet holes on the air outlet side of the first gas flow equalizing structure being larger than the diameter of the air outlet holes on the air outlet side of the second gas flow equalizing structure.

5. The wafer cleaning device according to claim 1, characterized in that, The wafer carrying mechanism includes a wafer transfer platform and a motion control platform, the motion control platform driving the wafer transfer platform to move the wafer.

6. The wafer cleaning device according to claim 1, wherein It further includes a reaction chamber, the plasma generator and the wafer carrying mechanism being both arranged inside the reaction chamber.

7. The wafer cleaning device according to claim 6, wherein, It further includes a tail gas treatment mechanism, the air inlet end of the tail gas treatment mechanism being communicated with the inside of the reaction chamber.

8. The wafer cleaning apparatus according to claim 6, wherein, The gas control mechanism includes a main gas pipe and an auxiliary gas pipe, the main gas pipe being used to deliver gas to the inside of the reaction chamber, the auxiliary gas pipe being used to deliver gas to the air inlet side of the plasma generator.

9. The wafer cleaning device according to claim 8, characterized in that, The gas control mechanism further includes a gas flow control module, the gas flow control module being used to control the gas flow rate delivered by the main gas pipe and / or the auxiliary gas pipe.

10. A wafer cleaning method, characterized in that, Using the wafer cleaning device according to any one of claims 1 to 9, the method includes the following steps: Placing the wafer to be cleaned on the wafer carrying mechanism so that the wafer is located on the air outlet side of the discharge electrode structure; Delivering gas to the plasma generator through the gas control mechanism and supplying power to the plate electrodes of the plasma generator so that after the particles ejected from the discharge gap of the plasma generator are ejected from the discharge gap with the airflow to form a plasma plume, the surface of the wafer is cleaned.

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